TWI744323B - Laminated heater with different heater trace materials - Google Patents

Abstract

A substrate support for a substrate processing system includes a plurality of heating zones, a baseplate, at least one of a heating layer and a ceramic layer arranged on the baseplate, and a plurality of heating elements provided within the at least one of the heating layer and the ceramic layer. The plurality of heating elements includes a first material having a first electrical resistance. Wiring is provided through the baseplate in a first zone of the plurality of heating zones. An electrical connection is routed from the wiring in the first zone to a first heating element of the plurality of heating elements. The first heating element is arranged in a second zone of the plurality of heating zones and the electrical connection includes a second material having a second electrical resistance that is less than the first electrical resistance.

Description

Stacked heaters with different heater trace materials

[Cross-reference of related applications] This application is to claim the U.S. Provisional Application No. 62/334,097 (filed on May 10, 2016) and the U.S. Provisional Application No. 62/334,084 (filed on May 10, 2016). Japan) priority.

This application is related to U.S. Patent Application No. 15/586,203 filed on May 3, 2017. The overall disclosures of the applications referred to above are incorporated here by reference.

The present disclosure relates to a substrate processing system, and more particularly to a system and method for controlling the temperature of a substrate holder.

The prior art description provided here is for the purpose of roughly presenting the background of the disclosure. The work of the current inventors described in the previous technical paragraph and the description of the implementation of the prior art that cannot be otherwise identified as the prior art at the time of application are not expressly or implicitly recognized as prior art for the content of this disclosure.

The substrate processing system can be used to process substrates such as semiconductor wafers. Exemplary processes that can be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and/or other etching, deposition, or cleaning processes . The substrate can be arranged on a substrate holder (such as a stand, an electrostatic chuck (ESC, electrostatic chuck), etc.) located in the processing chamber of the substrate processing system. During etching, a gas mixture containing one or more precursors can be introduced into the processing chamber, and plasma can be used to initiate a chemical reaction.

For example, the substrate holder of the ESC may include a ceramic layer configured to support the wafer. For example, the wafer can be clamped to the ceramic layer during processing. The heating layer can be arranged between the ceramic layer and the bottom plate of the substrate holder. For example only, the heating layer may be a ceramic heating plate containing heating elements, wiring, and the like. During the processing steps, the temperature of the substrate can be controlled by controlling the temperature of the heating plate.

A substrate support of a substrate processing system includes a plurality of heating sections, a bottom plate, at least one of a heating layer and a ceramic layer arranged on the bottom plate, and a plurality of heating elements arranged in at least one of the heating layer and the ceramic layer. The plurality of heating elements includes a first material having a first electrical resistance. The wiring is provided through the bottom plate in the first section of the plurality of heating sections. The electrical connection part is wired from the wiring in the first section to the first heating element of the plurality of heating elements. The first heating element is arranged in a second section of the plurality of heating sections, and the electrical connection part includes a second material having a second resistance, and the second resistance is smaller than the first resistance.

In other features, for the same voltage input, the heat output of the electrical connection part is less than the heat output of the first heating element. Each of the plurality of heating elements is equivalent to a first electrical trace with a first resistance, and the electrical connection portion is equivalent to a second electrical trace with a second resistance. The electrical connection part is equivalent to a bus trace. The width of the electrical connection portion is approximately equal to the width of the first heating element. The height of the electrical connection part is approximately equal to the height of the first heating element. The second section is arranged outside the first section in the radial direction.

In other features, the substrate holder further includes a perforation provided in the first section through the bottom plate and into at least one of the heating layer and the ceramic layer, and the wiring line through the perforation. The plurality of heating elements are arranged in the ceramic layer, and the electrical connections are wired through the ceramic layer. The plurality of heating elements are arranged in the heating layer, and the electrical connection parts are wired through the heating layer.

In yet another feature, the electrical connection portion and the first heating element are in the same plane. The substrate support further includes a conductor layer arranged on the bottom plate, and the electrical connection part is wired through the conductor layer. The conductor layer contains a polymer, and the electrical connection part is embedded in the polymer. The first material includes at least one of constantan, nickel alloy, iron alloy, and tungsten alloy, and the second material includes at least one of copper, tungsten, silver, and palladium.

From the detailed description, the scope of the patent application, and the drawings, the applicability of the disclosure in other fields will become obvious. The detailed description and specific examples are provided for illustrative purposes only, and are not intended to limit the scope of the disclosure.

For example, a substrate holder of an electrostatic chuck (ESC) may include one or more heating sections (e.g., a multi-section ESC). The ESC may include separate heating elements for each section of the heating layer. These heating elements are controlled to approximately reach the desired set point temperature in each of the individual zones.

The heating layer may include a laminated heating plate disposed between the upper ceramic layer and the bottom plate of the substrate holder. The heating plate includes a plurality of heating elements arranged all over the section of the ESC. The heating element includes electrical traces or other wiring that receive voltage input from a voltage source under the ESC through the bottom plate. For example, the bottom plate may include one or more perforations (for example, holes or access ports) aligned with the connection points of the heating elements in the heating plate. The wiring is connected between the voltage source and the connection point of the heating element through the through hole in the bottom plate.

Generally speaking, it is desirable that the perforation and the wiring passing through the perforation are as close as possible to the corresponding connection point of the heating element to avoid the heater exclusion section (that is, the section where the heating element cannot be set) and reduce temperature unevenness . For example, the perforation may be provided directly below the connection point. However, in some ESCs, many structural features may hinder the placement of perforations, wiring, and other heating element components in the most desired position. Therefore, the perforation and the corresponding wiring may be set to be more separated, and/or may be set outside the target section of the ESC. For example, in an ESC with a central section, a middle inner section, a middle outer section, and an outer section (such as the radially outermost section of the ESC), the perforations and wiring of the outer section may be arranged in the middle and outer sections Below.

Additional wiring may be required to provide voltage input from the through hole to the connection point of the various sections of the ESC. In some examples, the conductor layer is arranged under the heating plate to route the wiring to the connection points in the heating plate of the heating layer. The electrical traces/wiring within the conductor layer can be referred to as bus traces/wiring. Conversely, the electrical trace/wiring corresponding to the heating layer can be referred to as the heating element electrical trace/wiring. For example, the conductor layer may include wiring embedded in a polymer (e.g., polyimide). However, the electrical traces in the conductor layer may overlap with the electrical traces in the heating layer to increase the heat output in the corresponding section. Therefore, the electrical trace used to provide voltage input to one section (for example, to the outer section) in the conductor layer affects another section (for example, the section traversed by the electrical trace, such as the middle and outer sections). Section).

In some examples, the actual size of the electrical traces in the conductor layer can be modified to minimize the influence of the electrical traces in the conductor layer on the temperature of the corresponding section. For example, the length, width, thickness, etc. of the electrical traces and/or the spacing between the electrical traces can be adjusted to minimize the resistance and heat output for a known voltage input. However, the ability to minimize heat output in this way is limited. In addition, the variation of the actual size of the electrical traces will interfere with the flatness of the conductor layer and increase the heater exclusion area.

The system and method according to the principles of the present disclosure uses different materials for the bus traces and the heating element traces, and in some examples, the bus traces are arranged in the heating layer and the conductor layer is omitted. For example, the heating element traces may include a first material, while the busbar traces include a second material, the second material having a lower electrical resistance than the first material. Therefore, for the same voltage input, the bus traces output less heat than the heating element traces. In this way, using different materials for the bus traces and heating element traces can improve design flexibility (for example, the location of perforations), reduce heater exclusion zones, and improve temperature uniformity throughout the ESC, and Maintain the same actual size of the bus trace and heating element trace, and maintain flatness.

Referring now to FIG. 1, an exemplary substrate processing system 100 is shown. For example only, the substrate processing system 100 can be used to perform etching and/or other suitable substrate processing using RF plasma. The substrate processing system 100 includes a substrate processing chamber 102 that encloses other components of the substrate processing chamber 102 and contains RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate holder 106 such as an electrostatic chuck (ESC). During operation, the substrate 108 is arranged on the substrate holder 106. Although the specific substrate processing system 100 and chamber 102 are shown as an example, the principles of the present disclosure can be applied to other types of substrate processing systems and chambers, such as in-situ generation of plasma, (for example, using a microwave tube) to achieve Substrate processing system for remote plasma generation and transportation, etc.

For example only, the upper electrode 104 may include a shower head 109 for guiding and distributing the processing gas. The shower head 109 may include a rod portion that includes an end portion connected to the top surface of the processing chamber. The base is substantially cylindrical and extends radially outward from an opposite end of the rod at a position spaced from the top surface of the processing chamber. The surface or panel facing the substrate at the bottom of the shower head contains a plurality of holes, and processing gas or flushing gas flows through these holes. Alternatively, the upper electrode 104 may include a guide plate, and the processing gas may be guided in another way.

The substrate holder 106 includes a conductive bottom plate 110 as a lower electrode. The bottom plate 110 supports the ceramic layer 111, and the heating plate 112 is disposed between the bottom plate 110 and the ceramic layer 111. For example only, the heating plate 112 may be equivalent to a stacked, multi-section heating plate. The heat-resistant layer 114 (for example, a bonding layer) may be disposed between the heating plate 112 and the bottom plate 110. The bottom plate 110 may include one or more refrigerant passages 116 for allowing the refrigerant to flow through the bottom plate 110.

The RF generation system 120 generates an RF voltage and outputs the RF voltage to one of the upper electrode 104 and the lower electrode (for example, the bottom plate 110 of the substrate holder 106). The other of the upper electrode 104 and the bottom plate 110 may be DC grounded, AC grounded, or floating. For example only, the RF generation system 120 may include an RF voltage generator 122 for generating RF voltage, which is fed to the upper electrode 104 or the bottom plate 110 through the matching and distribution network 124. In other examples, plasma can be generated in an inductive or remote manner. Although as shown in the figure, for demonstration purposes, the RF generation system 120 is equivalent to a capacitively coupled plasma (CCP) system, but the principles of this disclosure can also be implemented in other suitable systems, which are only for demonstration purposes. , Such as transformer coupled plasma (TCP, transformer coupled plasma) system, CCP cathode system, remote microwave plasma generation and delivery system, etc.

The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas source 132), where N is an integer greater than zero. These gas sources supply one or more precursors and mixtures thereof. These gas sources can also supply flushing gas. Vaporized precursors can also be used. The gas source 132 is provided by valves 134-1, 134-2,..., and 134-N (collectively referred to as valve 134) and mass flow controllers 136-1, 136-2,..., and 136-N (collectively referred to as mass The flow controller 136) is connected to the manifold 140. The output of the manifold 140 is fed to the processing chamber 102. As an example only, the output of the manifold 140 is fed to the sprinkler head 109.

The temperature controller 142 can provide voltage input to a plurality of heating elements, for example, the heating element 144 disposed in the heating plate 112. For example, the heating element 144 may include, but is not limited to, a macro heating element corresponding to each section of the multi-section heating plate and/or an array of micro heating elements arranged in multiple sections of the multi-section heating plate. . The temperature controller 142 can be used to control a plurality of heating elements 144 and thereby control the temperature of the substrate holder 106 and the substrate 108. Although the heating plate 112 is disposed between the ceramic layer 111 and the bottom plate 110 (and the bonding layer 114) as shown in the figure, in other examples, the heating element 144 may be disposed in the ceramic layer 111 and the heating plate 112 may be omitted. In other examples, the heating element 144 may be disposed in the heating plate 112 and the ceramic layer 111.

The temperature controller 142 can communicate with the refrigerant assembly 146 to control the flow of the refrigerant through the passage 116. For example, the refrigerant assembly 146 may include a refrigerant pump and a storage tank. The temperature controller 142 operates the refrigerant assembly 146 to selectively allow the refrigerant to flow through the passage 116 to cool the substrate support 106.

The valve 150 and the pump 152 can be used to extract the reactant from the processing chamber 102. The system controller 160 may be used to control the components of the substrate processing system 100. The robot 170 can be used to transport the substrate onto the substrate holder 106 and remove the substrate from the substrate holder 106. For example, the robot 170 may transport the substrate between the substrate holder 106 and the load chamber 172. Although shown as a separate controller, the temperature controller 142 may be implemented in the system controller 160.

Referring now to FIGS. 2A and 2B, an exemplary ESC 200 is shown. The temperature controller 204 communicates with the ESC 200 via one or more electrical connections 208. For example, the electrical connection part 208 may include, but is not limited to, a connection part for selectively controlling the heating elements 212-1, 212-2, 212-3, and 212-4 (collectively referred to as the heating element 212), and a connection part for receiving A connection part for temperature feedback from one or more zone temperature sensors 220.

As shown in the figure, the ESC 200 is a multi-section ESC including sections 224-1, 224-2, 224-3, and 224-4 (collectively referred to as section 224). These sections can be called external Section, middle-outer section, middle-inner section, and inner section. Although four concentric circle segments 224 are shown, in an embodiment, the ESC 200 may include one, two, three, or more than four segments 224. The relative size, shape, orientation, etc. of the section 224 can be changed. For example, the segments 224 may be arranged in a quarter circle or another lattice arrangement. For example only, each section 224 includes a separate section temperature sensor 220 and a separate heating element 212. In an embodiment, each section 224 may include more than one temperature sensor 220.

The ESC 200 includes a bottom plate 228, a heat-resistant layer 236, a multi-section ceramic heating plate 240, and an upper ceramic layer 242. The bottom plate 228 includes a refrigerant channel 232. The heat-resistant layer 236 is formed on the bottom plate 228. The multi-section ceramic heating plate 240 is It is formed on the heat-resistant layer 236 and the upper ceramic layer 242 is formed on the heating plate 240. Wires passing through the bottom plate 228 and the ceramic layer 242 are used to provide voltage input from the temperature controller 204 to the heating element 212. In some examples, the heating element 212 may be disposed within the ceramic layer 242. For example, the dedicated heating plate 240 may be omitted. In FIG. 2A, for the sake of simplification, it is schematically shown that the electrical connection portion 208 is wired through the heat-resistant layer 236. In other examples as detailed below, the electrical connection portion 208 may be routed through a dedicated conductor layer, through the heating plate 240, through the ceramic layer 242, and so on.

The temperature controller 204 controls the heating element 212 in accordance with the desired set point temperature. For example, the temperature controller 204 may receive a set point temperature for one or more of the sections 224 (e.g., from the system controller 160 shown in FIG. 1). For example only, the temperature controller 204 may receive the same set point temperature for all or some of the zones 224 and/or different individual set point temperatures for each zone 224. The set point temperature of each zone 224 can be changed across different processes and different steps of each process.

The temperature controller 204 controls the heating element 212 of each zone 224 based on the respective set point temperature and the temperature feedback provided by the sensor 220. For example, the temperature controller 204 individually adjusts the power (eg, current) provided to each heating element 212 to reach a set point temperature at each sensor 220. The heating elements 212 may each include a single resistance coil or other structure schematically represented by the dashed line in FIG. 2B. Therefore, adjusting one of the heating elements 212 will affect the temperature of the entire respective section 224, and may also affect the remaining sections 224. The sensor 220 can provide temperature feedback about only a local part of each section 224. For example only, the sensor 220 may be placed in a part of each section 224 determined in advance to have the closest correlation with the average temperature of the section 224.

As shown in the figure, in the middle and outer sections 224-2, the middle and inner sections 224-3, and the inner section 224-4, respective perforations 246, 250, and 254 and corresponding voltage inputs are provided. As used herein, "perforation" generally refers to openings, ports, etc., through structures such as the bottom plate 228, and "wiring" refers to the conductive material in the perforation. Although a pair of perforations are displayed at a specific position, this is only an example, and any suitable perforation position and/or number of perforations can still be realized. For example, the through-holes 246, 250, and 254 are provided through the bottom plate 228, and the wiring system is provided through the through-holes 246, 250, and 254 to reach respective connection points. However, the perforations 258 corresponding to the outer section 224-1 may be provided to be more separated than the perforations 246, 250, and 254, and may be provided in the middle and outer sections 224-2. In other words, the wiring of the heating element of the outer section 224-1 is not arranged directly under the outer section 224-1. Therefore, an additional electrical connection is required to provide voltage input to the heating element of the outer section 224-1.

Referring now to FIGS. 3A, 3B, 4A, 4B, 5A, and 5B, an exemplary ESC 400 is shown that includes a heating element trace 404 formed of a first material and a bus trace 408 formed of a second material. FIG. 3B is a close-up view of a portion of the ESC 400 that includes the heating element trace 404 of FIG. 3A. FIG. 4B is a close-up view of a portion of the ESC 400 that includes the heating element trace 404 of FIG. 4A. FIG. 5B is a close-up view of a portion of the ESC 400 that includes the heating element trace 404 of FIG. 5A. The ESC 400 has a plurality of sections. For example only, it includes an outer section 410-1, a middle outer section 410-2, a middle inner section 410-3, and an inner section 410-4. These sections can be collectively referred to as For section 410.

The second material has a lower electrical resistance than the first material. Therefore, the bus trace 408 outputs less heat than the heating element trace 404. In this way, the bus trace 408 provides voltage input to the heating element trace 404 without causing a significant increase in temperature in the area of the ESC 400 where the bus trace 408 and the heating element trace 404 overlap. For example, the bus trace 408 may traverse the middle and outer section 410-2 of the ESC 400 to provide voltage input to the heating element trace 404 in the section 410-1 outside the ESC 400. However, because of the lower resistance of the bus trace 408 relative to the heating element trace 404, the bus trace 408 will not significantly affect the overlap between the heating element trace 412 and the bus trace 408 in the outer section 410-2. The temperature in the area, or the temperature in the area where the heating element trace 404 of the outer section 410-1 overlaps with the bus trace 408. Therefore, the width and/or height of the bus trace 408 may be approximately equal to the width and/or height of the heating element trace 404 without increasing the heat output overlap area of the bus trace 408 and the heating element trace 404. For example, the width and/or height of the bus trace 408 is within 10% of the width and/or height of the heating element trace 404. In another example, the width and/or height of the bus trace 408 is within 5% of the width and/or height of the heating element trace 404.

As shown in FIGS. 3A and 3B, the ESC 400 includes a heating layer 416, a ceramic layer 418, and a separate conductor layer 420. The heating layer 416 includes a heating element trace 404, and the conductor layer 420 includes a bus trace 408. The heating layer 416, the ceramic layer 418, and the conductor layer 420 are formed on the bottom plate 422. For simplicity, the bonding layer (for example, corresponding to the bonding layer 114) is not shown in FIGS. 3A, 3B, 4A, 4B, 5A, and 5B. In contrast, in FIGS. 4A and 4B, the ESC 400 includes a composite heating/conductor layer 424, which includes both the heating element trace 404 and the bus trace 408. In other words, the heating element trace 404 and the bus trace 408 are on the same plane. Therefore, the ESC 400 shown in FIG. 3B omits the conductor layer 420 and only requires a single layer 424. In some examples with only a single layer 424, a single conductor sheet including heating element traces 404 made of a first material and bus traces 408 made of a second material may be provided. For example only, the first material may include materials with relatively high resistance (such as nickel-copper alloy, nickel alloy, iron alloy, tungsten alloy, etc.), and the second material may include materials with relatively low resistance (such as copper, Tungsten, silver, palladium, their alloys, etc.). In FIGS. 5A and 5B, the ESC 400 does not include a dedicated heating layer 416. Instead, in this example, the heating element traces 404, 412, etc. are arranged in the ceramic layer 418. Therefore, the bus trace 408 is routed through the ceramic layer 418.

For demonstration purposes, only the bus trace 408 is shown routing from the through hole 428 in the middle and outer section 410-2 to the outer section 410-1. However, in other examples, individual perforations 428 and bus traces 408 may be provided in any one or more of the sections 410. In some examples, the bus trace 408 is routed across multiple sections of the section 410 (eg, from a perforation located in the middle inner section 410-3 to the outer section 410-1). Also, although as shown in the figure, the bus trace 408 is routed from the perforation in the radially inner section to the radially outer section, but in other examples, the bus trace 408 is routed from the radially outer section The perforations of are routed to the radially inner section (for example, from the perforation located in the outer section 410-1 to the middle inner section 410-3).

The previous description is merely illustrative in nature, and is in no way intended to limit the content of the disclosure, its application, or use. The extensive teachings of this disclosure can be implemented in various forms. Therefore, although the content of this disclosure includes specific examples, since other changes will become apparent when studying the drawings, descriptions, and the scope of the following patent applications, the true scope of the content of this disclosure should not be so limited. It should be understood that one or more steps in the method can be executed in a different order (or at the same time) without changing the principle of the present disclosure. Furthermore, although each of the embodiments is described above as having certain features, any one or more of the features described in any embodiment of this disclosure can be implemented in any other embodiment, And/or its feature combination (even if the combination is not explicitly described). In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

The spatial and functional relationships between components (for example, modules, circuit components, semiconductor layers, etc.) include "connection", "joining", "coupling", "nearby", "beside", " Description of various terms such as "above", "above", "below", and "setting". Unless explicitly described as “direct”, when the relationship between the first and second elements is described in the above disclosure, the relationship may be that there are no other intervening elements between the first and second elements. The direct relationship, but it can also be an indirect relationship (spatially or functionally) with one or more intermediary elements between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning the use of non-exclusive logical OR (A OR B OR C), and should not be interpreted as representing "at least one of A , At least one of B, and at least one of C".

In some implementations, the controller is part of the system, which can be part of the above example. Such systems may include semiconductor processing equipment, which includes processing tools, chambers, processing platforms, and/or specific processing components (wafer supports, gas flow systems, etc.). These systems can be integrated with electronic components that are used to control the operation of these systems before, during, and after processing semiconductor wafers or substrates. The electronic component can be called a "controller", which can control various components or sub-components of the system. The controller can be programmed according to processing requirements and/or system types to control any processing described herein, including processing gas delivery, temperature setting (for example, heating and/or cooling), pressure setting, and vacuum Setting, power setting, radio frequency (RF, radio frequency) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid delivery setting, position and operation setting, entering and leaving one of connection or interface with a specific system Tools and other handling tools and/or wafer handling in the load room.

Generally speaking, the controller can be defined as electronic components with various integrated circuits, logic, memory, and/or software, which receive instructions, issue instructions, control operations, perform cleaning operations, perform end-point measurements, and so on. The integrated circuit may include a chip in the form of firmware and storing program instructions, a digital signal processor (DSP, digital signal processor), a chip defined as application specific integrated circuits (ASIC, application specific integrated circuits), and /Or one or more microprocessors, or a microcontroller that executes program instructions (such as software). The program commands can be commands sent to the controller in the form of various independent setting values (or program files) to define operating parameters used to implement specific processing on a semiconductor wafer or for a system. In some embodiments, these operating parameters can be part of a recipe defined by a process engineer to be used in one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and One or more processing steps are completed during processing of the die.

In some implementations, the controller may be part of a computer or coupled to the computer, the computer is integrated with the system, or coupled to the system, or network connected to the system, or a combination thereof. For example, the controller can be located in the "cloud" of the entire or part of the main computer system of the fab, which allows remote access to wafer processing. The computer can remotely access the system to monitor the current progress of processing operations, check the history of past processing operations, check trends or performance indicators from multiple processing operations, change current processing parameters, and set processing based on current processing Step, or start a new process. In some examples, a remote computer (such as a server) can provide processing recipes to the system via a network, which can include a local area network or the Internet. The remote computer may include a user interface, which can input or program parameters and/or setting values, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters of each processing step to be executed during one or more operations. We should understand that these parameters can be specific to the type of processing to be executed and the type of tools that the controller interfaces or controls. Therefore, as described above, the controllers can be distributed in the following ways: for example, by including one or more separate controls that are connected together by a network and operate for a common purpose (such as the processing and control described herein) Device. An example of a controller allocated for this purpose can be one or more integrated circuits on the chamber, which are integrated with the remote device (such as platform level or as part of a remote computer). Or multiple integrated circuit communication to jointly control the processing on the chamber.

Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotating cleaning chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel etching Chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD, chemical vapor deposition) chamber or module, atomic layer deposition (ALD) Chamber or module, atomic layer etch (ALE, atomic layer etch) chamber or module, ion implantation chamber or module, coating and developing (track) chamber or module, and combined or used in semiconductor crystal Any other semiconductor processing system for processing and/or manufacturing of the circle.

As mentioned above, according to the processing steps to be executed by the tool, the controller can be connected with other tool circuits or modules, other tool components, cluster tools, other tool interfaces, neighboring tools, neighboring tools, and settings. The tool in the factory, the host computer, another controller, or the wafer container used for raw material transportation to communicate with one or more of the tools that are transported away from the tool location and/or loading channel in the semiconductor manufacturing plant .

100‧‧‧Substrate Processing System 102‧‧‧Processing chamber 104‧‧‧Upper electrode 106‧‧‧Substrate holder 108‧‧‧Substrate 109‧‧‧Spray head 110‧‧‧Bottom plate 111‧‧‧Ceramic layer 112‧‧‧Heating plate 114‧‧‧Heat-resistant layer 116‧‧‧Refrigerant Channel 120‧‧‧RF generation system 122‧‧‧RF voltage generator 124‧‧‧Matching and distribution network 130‧‧‧Gas delivery system 132-1‧‧‧Gas source 132-2‧‧‧Gas source 132-N‧‧‧Gas source 134-1‧‧‧Valve 134-N‧‧‧valve 136-1‧‧‧Mass flow controller 136-N‧‧‧Mass flow controller 140‧‧‧Manifold 142‧‧‧Temperature Controller 144‧‧‧Heating element 146‧‧‧Refrigerant components 150‧‧‧valve 152‧‧‧Pump 160‧‧‧System Controller 170‧‧‧Robot 172‧‧‧Load Room 200‧‧‧ESC 204‧‧‧Temperature Controller 208‧‧‧Electrical connection 212‧‧‧Heating element 212-1‧‧‧Heating element 212-2‧‧‧Heating element 212-3‧‧‧Heating element 212-4‧‧‧Heating element 220‧‧‧Segment temperature sensor Section 224-1‧‧‧ Section 224-2‧‧‧ Section 224-3‧‧‧ Section 224-4‧‧‧ 228‧‧‧Bottom plate 232‧‧‧Refrigerant Channel 236‧‧‧Heat-resistant layer 240‧‧‧heating plate 242‧‧‧Ceramic layer 246‧‧‧Perforation 250‧‧‧Perforation 254‧‧‧Perforation 258‧‧‧Perforation 400‧‧‧ESC 404‧‧‧Heating element trace 408‧‧‧Bus trace 410-1‧‧‧Outer section 410-2‧‧‧Chinese and foreign sections 410-3‧‧‧Central inner section 410-4‧‧‧Inner section 412‧‧‧Heating element trace 416‧‧‧Heating layer 418‧‧‧Ceramic layer 420‧‧‧Conductor layer 422‧‧‧Bottom plate 424‧‧‧Heating/Conductor Layer 428‧‧‧ Piercing

The content of this disclosure will become more fully understood by the detailed description and drawings, among which:

FIG. 1 is a functional block diagram of an exemplary substrate processing system according to the principles of the present disclosure. The substrate processing system includes a substrate holder;

Figure 2A is an exemplary electrostatic chuck according to the principles of the present disclosure;

FIG. 2B shows the section and thermal control element of an exemplary electrostatic chuck according to the principles of the present disclosure;

3A and 3B show a first exemplary electrostatic chuck according to the principles of the present disclosure, which includes a heating element trace formed of a first material and a bus trace formed of a second material;

4A and 4B show a second exemplary electrostatic chuck according to the principles of the present disclosure, which includes a heating element trace formed of a first material and a bus trace formed of a second material; and

5A and 5B show a third exemplary electrostatic chuck according to the principles of the present disclosure, which includes a heating element trace formed of a first material and a bus trace formed of a second material.

In these drawings, reference symbols can be used repeatedly to identify similar and/or identical elements.

200‧‧‧ESC

212-1‧‧‧Heating element

212-2‧‧‧Heating element

212-3‧‧‧Heating element

212-4‧‧‧Heating element

220‧‧‧Segment temperature sensor

Section 224-1‧‧‧

Section 224-2‧‧‧

Section 224-3‧‧‧

Section 224-4‧‧‧

246‧‧‧Perforation

250‧‧‧Perforation

254‧‧‧Perforation

258‧‧‧Perforation

Claims (14)

A substrate support for a substrate processing system, the substrate support comprising: a plurality of annular heating sections; a bottom plate; at least one of a heating layer and a ceramic layer, which is disposed on the bottom plate; and a plurality of heating elements are disposed on the heating layer And the at least one of the ceramic layer, wherein the plurality of heating elements includes a first material having a first resistance; wiring is provided in a first section of the plurality of heating sections through the bottom plate; and a The electrical connection portion is wired from the wiring in the first section to a first heating element of the plurality of heating elements, wherein the first heating element is arranged in a second section of the plurality of heating sections, wherein The electrical connection part traverses from the first section to the second section to connect with the first heating element arranged in the second section, but not with any heating element arranged in the first section. Device connection, and wherein the electrical connection portion includes a second material having a second resistance, and the second resistance is smaller than the first resistance. The substrate holder of the substrate processing system described in the first item of the scope of patent application, wherein for the same voltage input, the heat output of the electrical connection part is less than the heat output of the first heating element. The substrate holder of the substrate processing system described in the first item of the scope of patent application, wherein (i) each of the plurality of heating elements is equivalent to a first electrical trace having the first resistance, and (ii) the The electrical connection part is equivalent to a second electrical trace having the second resistance. According to the substrate holder of the substrate processing system described in the first item of the scope of patent application, the electrical connection part is equivalent to a bus trace. According to the substrate support of the substrate processing system described in claim 1, wherein the width of the electrical connection portion is approximately equal to the width of the first heating element. According to the substrate holder of the substrate processing system described in claim 1, wherein the height of the electrical connection portion is approximately equal to the height of the first heating element. According to the substrate holder of the substrate processing system described in claim 1, wherein the second section is arranged outside the first section in the radial direction. The substrate holder of the substrate processing system described in the first item of the scope of patent application further includes a substrate holder provided in the first section, which penetrates the bottom plate and enters into the at least one of the heating layer and the ceramic layer A perforation, wherein the wiring line passes through the perforation. The substrate holder of the substrate processing system described in the first item of the scope of patent application, wherein the plurality of heating elements are arranged in the ceramic layer, and the electrical connection part is wired through the ceramic layer. According to the substrate support of the substrate processing system described in the first item of the scope of patent application, the plurality of heating elements are arranged in the heating layer, and the electrical connection part is wired through the heating layer. According to the substrate holder of the substrate processing system described in claim 1, wherein the electrical connection part and the first heating element are in the same plane. The substrate support of the substrate processing system described in the first item of the scope of patent application further includes a conductor layer disposed on the bottom plate, wherein the electrical connection part is wired through the conductor layer. The substrate holder of the substrate processing system according to the 12th patent application, wherein the conductor layer includes a polymer, and the electrical connection part is embedded in the polymer. The substrate holder of the substrate processing system according to the scope of patent application 1, wherein the first material includes at least one of a nickel-copper alloy, a nickel alloy, an iron alloy, and a tungsten alloy, and the second material includes copper and tungsten At least one of, silver, and palladium.

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