CN107426837A - The connection being laminated between heater and heater voltage input - Google Patents

Abstract

The present invention provides a connection between the lamination heater and the heater voltage input. A substrate support for a substrate processing system includes a plurality of heating zones, a substrate, a heating layer disposed on the substrate, a ceramic layer disposed on the heating layer, and through the substrate, the heating layer and into the plurality of heating zones The wiring is provided in the ceramic layer in the first region. Electrical connections are routed across the ceramic layer from wires in a first region of the plurality of heating regions to a second region of the plurality of heating regions and to heating elements in the heating layer in the second region.

Description

Connection between lamination heater and heater voltage input

Cross References to Related Applications

This application claims the benefit of US Provisional Application No. 62/334,097, filed May 10, 2016, and US Provisional Application No. 62/334,084, filed May 10, 2016.

This application is related to US Patent Application No. [xx/xxx,xxx] (USPTO Ref. 4024-2US) filed on the same date. The entire disclosure of the above application is incorporated herein by reference.

technical field

The present disclosure relates to substrate processing systems, and more particularly to systems and methods for controlling the temperature of a substrate support.

Background technique

The background description provided here is for the purpose of generally presenting the context of the disclosure. The work of the presently named inventors, to the extent described in this Background section and aspects of this specification that would not otherwise be considered prior art at the time of filing, is neither expressly nor implicitly admitted to be prior art to the present disclosure.

Substrate processing systems may be used to process substrates, such as semiconductor wafers. Exemplary processes that may be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and/or other etching, deposition, or cleaning processes. A substrate may be disposed on a substrate support (eg, susceptor, electrostatic chuck (ESC), etc.) in a process chamber of a substrate processing system. During etching, a gas mixture including one or more precursors may be introduced into the processing chamber, and a plasma may be used to initiate a chemical reaction.

A substrate support, such as an ESC, may include a ceramic layer configured to support a substrate. For example, a substrate may be clamped to a ceramic layer during processing. A heating layer may be arranged between the ceramic layer and the base plate of the substrate support. For example, the heating layer may be a ceramic heating plate including heating elements, wiring, and the like. By controlling the temperature of the heating plate, the temperature of the substrate can be controlled during processing.

Contents of the invention

A substrate support for a substrate processing system includes a plurality of heating regions, a substrate, a heating layer disposed on the substrate, a ceramic layer disposed on the heating layer, and through the substrate, the heating layer and into a plurality of The wiring is provided by the ceramic layer in the first region of the heating zone. Electrical connections are routed across the ceramic layer from the wiring in the first region to a second region of the plurality of heating regions and to heating elements in the heating layer of the second region.

In other features, the electrical connections correspond to electrical traces. The electrical connection corresponds to a second wiring different from said wiring provided through said substrate. The second area is located radially outward of the first area. The electrical connection has a lower resistance than the heating element.

In other features, the substrate support includes vias provided through the substrate, the heating layer, and the ceramic layer in the first region, and the wiring is routed through the vias. The electrical connection is coupled to a connection point of the heating element using at least one of a solder connection and a conductive epoxy.

In still other features, the substrate support includes through holes provided through the ceramic layer and the heating layer in the second region. The vias are filled with a conductive material that couples the electrical connection to a connection point of the heating element. The substrate support includes contact pads arranged between the electrical connection and the heating element. The contact pad includes a first portion disposed in the ceramic layer and a second portion disposed in the heating layer. The via hole is filled with a conductive material. A conductive material is disposed between the first portion of the contact pad and the second portion of the contact pad.

Other applicability of the disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure.

Some aspects of the invention can be described as follows:

1. A substrate support for a substrate processing system, the substrate support comprising:

Multiple heating zones;

Substrate;

a heating layer arranged on the substrate;

a ceramic layer arranged on said heating layer;

wiring provided through the substrate, the heating layer and into the ceramic layer in a first region of the plurality of heating regions;

An electrical connection across the ceramic layer from a wiring in the first region to a second region of the plurality of heating regions and to heating element wiring in the heating layer of the second region.

2. The substrate support of clause 1, wherein the electrical connections correspond to electrical traces.

3. The substrate support of clause 1, wherein the electrical connection corresponds to a second wiring different from the wiring provided through the substrate.

4. The substrate support of clause 1, wherein the second region is located radially outward of the first region.

5. The substrate support of clause 1, further comprising vias provided through the substrate, the heating layer and the ceramic layer in the first region, wherein the wires pass through the vias. hole routing.

6. The substrate support of clause 1, wherein the electrical connection has a lower resistance than the heating element.

7. The substrate support of clause 1, wherein the electrical connection is coupled to a connection point of the heating element using at least one of a solder connection and a conductive epoxy.

8. The substrate support of clause 1, further comprising through holes provided through the ceramic layer and the heating layer in the second region.

9. The substrate support of clause 8, wherein the via hole is filled with an electrically conductive material coupling the electrical connection to a connection point of the heating element.

10. The substrate support of clause 8, further comprising a contact pad arranged between the electrical connection and the heating element.

11. The substrate support of clause 10, wherein the contact pad comprises a first portion arranged in the ceramic layer and a second portion arranged in the heating layer.

12. The substrate support of clause 11, wherein the vias are filled with a conductive material.

13. The substrate support of clause 12, wherein the electrically conductive material is disposed between the first portion of the contact pad and the second portion of the contact pad.

Description of drawings

The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

1 is a functional block diagram of an exemplary substrate processing system including a substrate support according to the principles of the present disclosure;

FIG. 2A is an exemplary electrostatic chuck according to the principles of the present disclosure;

2B illustrates regions and thermal control elements of an exemplary electrostatic chuck in accordance with principles of the present disclosure;

FIG. 3 illustrates an exemplary routing of electrical connections through a ceramic layer of an electrostatic chuck in accordance with principles of the present disclosure;

4A and 4B illustrate a first exemplary connection between a ceramic layer and a heating layer in accordance with principles of the present disclosure;

5A and 5B illustrate a second exemplary connection between a ceramic layer and a heating layer in accordance with principles of the present disclosure; and

6A and 6B illustrate a third exemplary connection between a ceramic layer and a heating layer in accordance with principles of the present disclosure.

In the drawings, reference numbers may be repeated to identify similar and/or identical elements.

detailed description

A substrate support such as an electrostatic chuck (ESC) may include one or more heating zones (eg, a multi-zone ESC). The ESC may include individual heating elements for heating each region of the layer. The heating elements are controlled to substantially achieve a desired setpoint temperature in each of the respective zones.

The heating layer may comprise a laminated heating plate disposed between the upper ceramic layer of the substrate support and the substrate. The heating plate includes a plurality of heating elements arranged in the entire area of the ESC. The heating element includes electrical traces or other wiring that receive a voltage input provided through the substrate from a voltage source below the ESC. For example, the substrate may include one or more through-holes (eg, holes or inlets) aligned with connection points of heating elements in the heating plate. Wiring is connected between the voltage source and the connection point of the heating element through through-holes in the base plate.

In general, it is desirable that the vias and the wires routed through the vias be as close as possible to the corresponding connection points of the heating elements to avoid heater exclusion areas (ie, areas where the heating elements cannot be located) and to reduce temperature non-uniformity. For example, a via can be located directly below the connection point. However, in some ESCs, various structural features may interfere with providing vias, wires, and other heating element components in optimal locations. Accordingly, the vias and corresponding wires may be further separated and/or may be located outside the target area of the ESC. For example, in an ESC with an inner zone, a middle inner zone, a middle outer zone, and an outer zone, vias and wires for the outer zone may be located under the middle outer zone, resulting in asymmetrical heating patterns and uneven temperatures.

Systems and methods in accordance with principles of the present disclosure provide a connection between a voltage input and a heating plate through a ceramic layer above the heating plate. In other words, the wiring is routed up and into the ceramic layer through the vias in the substrate and heating layer. Within the ceramic layer, wiring (which may include electrical traces, contacts, etc.) is routed horizontally (ie, laterally) toward the desired connection point of the heating layer, and then back down into the heating layer at the desired connection point. Therefore, the electrical connection between the via and the corresponding connection point is embedded within the ceramic layer, and there is no need to minimize the distance between the via and the wiring for the voltage input and the connection point. In this way, electrical connection routing through the ceramic layer increases design flexibility (eg, location of vias), reduces heater exclusion area, and improves temperature uniformity across the ESC.

Referring now to FIG. 1 , an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 may be used to perform etching using RF plasma and/or other suitable substrate treatments. The substrate processing system 100 includes a processing chamber 102 that surrounds the other components of the substrate processing chamber 100 and contains an RF plasma. The substrate processing chamber 100 includes an upper electrode 104 and a substrate support 106 such as an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106 . Although a particular substrate processing system 100 and chamber 102 is shown as an example, the principles of the present disclosure may be applied to other types of substrate processing systems and chambers, such as substrate processing systems that generate plasma in situ, that enable remote plasma generation and substrate processing systems for transport (eg using microwave tubes), etc.

By way of example only, the upper electrode 104 may include a showerhead 109 for introducing and distributing process gases. The shower head 109 may include a stem portion including one end connected to the top surface of the processing chamber. The base is generally cylindrical and extends radially outward from the opposite end of the stem at a location spaced from the top surface of the chamber. The substrate-facing surface or faceplate of the base of the showerhead includes a plurality of holes through which process or purge gases flow. Alternatively, the upper electrode 104 may include a conductive plate, and the process gas may be introduced in another manner.

The substrate support 106 includes a conductive substrate 110 that acts as a lower electrode. The substrate 110 supports the ceramic layer 111 , and the heating plate 112 is disposed between the substrate 110 and the ceramic layer 111 . For example, heating plate 112 may correspond to a stacked multi-zone heating plate. A thermal resistance layer 114 (eg, a bonding layer) may be disposed between the heating plate 112 and the substrate 110 . The base plate 110 may include one or more coolant channels 116 for flowing coolant through the base plate 110 .

The RF generation system 120 generates and outputs an RF voltage to one of the upper electrode 104 and the lower electrode (eg, the substrate 110 of the substrate holder 106 ). The other of the upper electrode 104 and the substrate 110 may be DC grounded, AC grounded, or floating. By way of example only, RF generation system 120 may include RF voltage generator 122 that generates an RF voltage that is fed to top electrode 104 or substrate 110 by matching and distribution network 124 . In other examples, the plasma can be generated inductively or remotely. Although shown by example, RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure may also be implemented in other suitable systems, by way of example only, such as a transformer coupled plasma Body (TCP) system, CCP cathode system, remote microwave plasma generation and delivery system, etc.

Gas delivery system 130 includes one or more gas sources 132-1, 132-2, . . . and 132-N (collectively gas sources 132), where N is an integer greater than zero. A gas source provides one or more precursors and mixtures thereof. The gas source may also supply purge gas. Vaporized precursors can also be used. Gas source 132 passes through valves 134-1, 134-2, ... and 134-N (collectively valves 134) and mass flow controllers 136-1, 136-2, ... and 136-N (collectively mass flow controllers) Connects to manifold 140. The output of manifold 140 is fed to processing chamber 102 . By way of example only, the output of manifold 140 is fed to showerhead 109 .

The temperature controller 142 may provide a voltage input to a heating element 144 disposed in the heating plate 112 . For example, heating elements 144 may include, but are not limited to, heating elements corresponding to individual zones in a multi-zone heating plate and/or an array of micro-heating elements arranged across multiple zones of a multi-zone heating plate. A temperature controller 142 may be used to control a plurality of heating elements 144 to control the temperature of the substrate support 106 and the substrate 108 . Substrate support 106 in accordance with principles of the present disclosure is routed through ceramic layer 111 for electrical connection to heating element 144, as described in more detail below.

A temperature controller 142 may communicate with a coolant assembly 146 to control coolant flow through passage 116 . For example, coolant assembly 146 may include a coolant pump and a reservoir. Temperature controller 142 operates coolant assembly 146 to selectively flow coolant through channels 116 to cool substrate support 106 .

A valve 150 and a pump 152 may be used to evacuate reactants from the processing chamber 102 . A system controller 160 may be used to control components of the substrate processing system 100 . A robot 170 may be used to transport substrates onto the substrate support 106 and may remove substrates from the substrate support 106 . For example, robot 170 may transfer a substrate between substrate support 106 and load lock 172 . Although shown as a separate controller, temperature controller 142 may be implemented within system controller 160 .

Referring now to FIGS. 2A and 2B , an exemplary ESC 200 is shown. Temperature controller 204 communicates with ESC 200 via one or more electrical connections 208 . For example, electrical connections 208 may include, but are not limited to, connections for selectively controlling heating elements 212-1, 212-2, 212-3, and 212-4 (collectively heating elements 212) and for receiving signals from one or more zone temperature sensors. 220 for temperature feedback connection.

As shown, ESC 200 is a multi-zone ESC that includes zones 224-1, 224-2, 224-3, and 224-4 (collectively zones 224), which may be referred to as outer zones, middle outer zones, middle inner zones, and inner area. The outer area may correspond to the outermost area. Although shown with four concentric regions 224 , in one embodiment, ESC 200 may include one, two, three, or more than four regions 224 . The shape of region 224 may vary. For example, regions 224 may be provided in a fan shape or another grid-like arrangement. For example only, each zone 224 includes a respective one of the zone temperature sensors 220 and a respective one of the heating elements 212 . In various embodiments, there may be more than one temperature sensor 220 per zone 224 .

The ESC 200 includes: a base plate 228 including coolant channels 232; a thermal resistance layer 236 formed on the base plate 228; a multi-zone ceramic heating plate 240 formed on the thermal resistance layer 236; and an upper ceramic heating plate formed on the heating plate 240. Layer 242. A voltage input is provided from temperature controller 204 to heating element 212 using wiring routed through substrate 228 and ceramic layer 242 .

The temperature controller 204 controls the heating element 212 according to a desired set point temperature. For example, temperature controller 204 may receive (eg, system controller 160 as shown in FIG. 1 ) setpoint temperatures for one or more zones 224 . For example, temperature controller 204 may receive the same setpoint temperature for all or some of zones 224 and/or a different corresponding setpoint temperature for each of zones 224 . The set point temperature for each zone 224 may vary between different processes and between different steps of each process.

The temperature controller 204 controls the heating elements 212 of each zone 224 based on the respective setpoint temperature and temperature feedback provided by the sensors 220 . For example, temperature controller 204 individually adjusts the power (eg, current or duty cycle) provided to each heating element 212 to achieve a setpoint temperature at each sensor 220 . The heating elements 212 may each comprise a single resistive coil or other structure schematically represented by the dashed lines in FIG. 2B . Thus, adjusting one of the heating elements 212 affects the temperature of the entire corresponding zone 224 and may also affect other zones in the zone 224 . Sensors 220 may only provide temperature feedback for a localized portion of each zone 224 . By way of example only, sensors 220 may be located in portions of each zone 224 that are predetermined to be most relevant to the average temperature of that zone 224 .

As shown, corresponding vias 246, 250, and 254 and corresponding voltage inputs are disposed in middle outer region 224-2, middle inner region 224-3, and inner region 224-4. As used herein, "via" generally refers to an opening, port, etc. through a structure such as substrate 228, and "wiring" refers to conductive material within the via. While vias are shown in pairs at particular locations by way of example only, any suitable location and/or number of vias may be implemented. For example, vias 246, 250, and 254 are provided through substrate 228, and wiring is provided through vias 246, 250, and 254 to corresponding connection points. However, via 258 corresponding to outer region 224-1 may be located farther than vias 246, 250, and 254, and may be located in intermediate outer region 224-2. In other words, the wiring for the heating elements of outer zone 224-1 is not disposed directly below outer zone 224-1. Therefore, additional electrical connections are required to provide voltage input to the heating elements of the outer zone 224-1.

FIG. 3 illustrates an exemplary ESC 400 with electrical connections 404 routed within (eg, laterally through, in a lateral direction) a ceramic layer 408 . Although ceramic layer 408 is shown as a single uniform layer, in some examples, ceramic layer 408 may correspond to multiple discrete layers, one layer of multiple layers, etc. FIG. ESC 400 has a plurality of regions, including, by way of example only, outer region 410-1 (e.g., corresponding to the radially outermost region of ESC 400), middle outer region 410-2, middle inner region 410-3, and inner region 410 -4, these areas may be collectively referred to as area 410. For example, the vias 412 in the substrate 416 may be located outside the outer region 410-1 of the ESC 400 (eg, in the middle outer region 410-2) as described above in FIGS. 2A and 2B . A voltage input (eg, wire) 420 is routed through via 412 and heating layer 424 and into ceramic layer 408 . Within ceramic layer 408 , electrical connections 404 are routed through ceramic layer 408 towards connection points 428 at heating layer 424 . Thus, the voltage input to the heating layer 424 in the outer region 410 - 1 of the ESC is provided through the substrate 416 and the ceramic layer 408 . In some examples, electrical connections 404 correspond to electrical traces. In other examples, electrical connections 404 include wires. For example, the wiring of electrical connection 404 may be the same as or different than the wiring of voltage input 420 .

Electrical connection 404 within ceramic layer 408 may comprise a conductive material and/or dimension that has a low resistance (eg, relative to heating element 436 of heating layer 424 ). For example, electrical connection 404 may include, but is not limited to, tungsten, copper, magnesium, palladium, silver, and/or various alloys thereof. Instead, heating element 436 may include, but is not limited to, nickel alloys, iron alloys, tungsten alloys, and the like. The heating layer 424 may include polyimide, acrylic, silicone, etc., and the heating element 436 is embedded therein.

Although as shown, the via 412 is located in the middle outer region 410-2 and the electrical connection 404 is routed across the ceramic layer 408 from the middle outer region 410-2 to the outer region 410-1, in other examples the via 412 may be located in any of the regions 410 , and the electrical connections 404 may be routed to any of the other regions 410 . In some examples, electrical connection 404 is routed across multiple ones of regions 410 (eg, from a via located in middle inner region 410-3 to outer region 410-1). Furthermore, although as shown, electrical connections 404 are routed from vias in the radially inward region to radially outward regions, in other examples electrical connections 404 are routed from vias in the radially outward region. to a radially inward region (eg, from a via located in outer region 410-1 to intermediate inner region 410-3).

Referring now to FIGS. 4A and 4B , a first exemplary arrangement of an ESC 450 in accordance with the principles of the present disclosure is shown. FIG. 4A is a cross-sectional view, and FIG. 4B is a plan view. In this example, electrical connection 454 (eg, corresponding to electrical connection 404 ) is routed through ceramic layer 458 formed on heating layer 462 . For example, electrical connection 454 is routed from the middle outer region of ESC 450 to the outer region. Electrical connection 454 is electrically coupled to a connection point of heating element 466 using conductive material 470 (eg, solder, conductive epoxy, etc.).

Referring now to FIGS. 5A and 5B , a second exemplary arrangement of an ESC 500 in accordance with the principles of the present disclosure is shown. FIG. 5A is a cross-sectional view, and FIG. 5B is a plan view. In this example, electrical connections 504 are routed through ceramic layer 508 formed on heating layer 512 . For example, electrical connections 504 are routed from a central outer region of ESC 500 to outer regions. Electrical connection 504 is electrically coupled to a connection point of heating element 516 using via 520 filled with a conductive material 524 (eg, solder, conductive epoxy, etc.). For example, vias 520 may be formed through corresponding regions in electrical connections 504 , ceramic layer 508 , heating layer 512 , and heating element 516 and then filled with conductive material 524 .

Referring now to FIGS. 6A and 6B , a third example arrangement of an ESC 600 in accordance with the principles of the present disclosure is shown. FIG. 6A is a cross-sectional view, and FIG. 6B is a plan view. In this example, electrical connections 604 are routed through ceramic layer 608 formed on heating layer 612 . For example, electrical connection 604 is routed from the middle outer region of ESC 600 to the outer region. The electrical connection 604 is electrically coupled to the connection point of the heating element 616 using a via 620 filled with a conductive material 624 (e.g., solder, conductive epoxy, etc.) and a contact pad 628 disposed between the electrical connection 604 and the heating element 616. . For example, vias 620 may be formed through corresponding areas in electrical connection 604 , ceramic layer 608 , heating layer 612 , heating element 616 , and contact pad 628 and then filled with conductive material 624 .

As shown, the conductive material 624 may be disposed between separate portions of the contact pad 628 (i.e., between the portion 632 of the contact pad 628 coupled to the electrical connection 604 and the portion of the contact pad 628 coupled to the heating element 616 636). Portions 632 and 636 of contact pad 628 may comprise the same or different materials. For example, portion 632 may comprise the same material as electrical connection 604 while portion 636 comprises the same material as heating element 616 . In other examples, contact pad 628 may correspond to a single structure coupled to both electrical connection 604 and heating element 616 with via 620 formed therethrough.

The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Furthermore, while each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure may be implemented in any other embodiment and/or in conjunction with any Combinations of features of other embodiments are possible even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the interchange of one or more embodiments with one another remains within the scope of this disclosure.

Uses of spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) include "connected," "joined," "coupled," "adjacent," "adjacent," "at... Various terms such as "on", "above", "below" and "set" are used to describe. When a relationship between first and second elements is described in the above disclosure, unless explicitly described as "directly", the relationship may be one in which no other intermediate elements exist between said first and second elements. a direct relationship, but may also be an indirect relationship in which one or more intervening elements (either spatially or functionally) exist between said first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A or B or C) using a non-exclusive logical OR (OR), and should not be construed to mean "in A at least one of B, at least one of B, and at least one of C".

In some embodiments, the controller is part of a system, which may be part of the embodiments described above. Such systems may include semiconductor processing equipment including one or more process tools, one or more chambers, one or more platforms for processing, and/or specific processing components (substrate susceptors, gas flow system, etc.). These systems may be integrated with electronics to control the operation of these systems before, during, or after processing of the semiconductor substrate or substrate. Electronic devices may be referred to as "controllers," which may control various components or subsections of one or more systems. Depending on process requirements and/or type of system, the controller can be programmed to control any of the disclosed processes, including control of process gas delivery, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, substrate access Transfer of tools and other transport means and/or load locks connected to or interfaced with a particular system.

Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and/or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, and the like. These integrated circuits may include chips storing program instructions in the form of firmware, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and/or one or more microprocessors executing program instructions (e.g., software) device or microcontroller. Program instructions may be instructions transmitted to a controller or system in the form of various individual settings (or program files) that define operating parameters for a particular process on or for a semiconductor substrate . In some embodiments, the operating parameters may be defined by a process engineer to complete one or more layer(s) of a substrate, material, metal, oxide, silicon, silicon dioxide, surface, circuit, and/or Part of a recipe for one or more processing steps in the manufacture of a die.

In some embodiments, the controller may be part of, or coupled to, a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, controllers can be in the "cloud" or be all or part of a wafer factory (fab) host system, which can allow remote access to substrate processing. Computers can enable remote access to the system to monitor the current process of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics across multiple manufacturing operations, to change parameters of the current process, set process steps to follow the current process Or start a new craft. In some instances, a remote computer (eg, a server) can provide process recipes to the system over a network, which can include a local network or the Internet. The remote computer may include a user interface that allows input or programming of parameters and/or settings, which are then transferred from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that these parameters may be specific to the type of process to be performed as well as the type of tool to which the controller is configured to interface or control. Thus, as noted above, the controller may be distributed, for example, by including one or more discrete controllers that are networked together and directed toward a common goal (e.g., the processes and controls described herein) )Work. An example of a distributed controller for these purposes could be one or more integrated circuits in a room communicating with one or more remote integrated circuits (e.g., at the platform level or as part of a remote computer) that combine to control the indoor craft.

Exemplary systems may include, but are not limited to, plasma etch chambers or modules (using inductively or capacitively coupled plasma), deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, chamfered edges Etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE) chamber or module, ion implantation chamber or module , orbital chamber or module, and any other semiconductor processing system that may be associated with or used in the preparation and/or manufacture of semiconductor substrates.

As noted above, depending on the one or more process steps the tool is to perform, the controller may interface with one or more other tool circuits or modules, other tool components, combination tools, other tool interfaces, adjacent tools, adjacent tools, A tool located throughout the fab, a host computer, another controller, or a tool used in material handling to move containers of substrates to and from tool locations and/or load ports in the semiconductor fabrication plant communicates.

Claims (10)

1. A substrate support for a substrate processing system, the substrate support comprising: Multiple heating zones; Substrate; a heating layer arranged on the substrate; a ceramic layer arranged on said heating layer; wiring provided through the substrate, the heating layer and into the ceramic layer in a first region of the plurality of heating regions; An electrical connection across the ceramic layer from a wiring in the first region to a second region of the plurality of heating regions and to heating element wiring in the heating layer of the second region. 2. The substrate support of claim 1, wherein the electrical connections correspond to electrical traces. 3. The substrate support of claim 1, wherein the electrical connection corresponds to a second wiring different from the wiring provided through the substrate. 4. The substrate support of claim 1, wherein the second region is located radially outward of the first region. 5. The substrate support of claim 1 , further comprising vias provided through said substrate, said heating layer, and said ceramic layer in said first region, wherein said wires pass through said Via routing. 6. The substrate support of claim 1, wherein the electrical connection has a lower resistance than the heating element. 7. The substrate support of claim 1, wherein the electrical connection is coupled to a connection point of the heating element using at least one of a solder connection and a conductive epoxy. 8. The substrate support of claim 1, further comprising through holes provided through the ceramic layer and the heating layer in the second region. 9. The substrate support of claim 8, wherein the via is filled with a conductive material coupling the electrical connection to a connection point of the heating element. 10. The substrate support of claim 8, further comprising a contact pad disposed between the electrical connection and the heating element.