TWI744194B - Light-emitting diode packaging structure and manufacturing method thereof - Google Patents

Abstract

The present invention discloses a light emitting diode packaging structure and a manufacturing method thereof. First, a semiconductor wafer is provided. The semiconductor wafer has a plurality of semiconductor substrates. Then, each semiconductor substrate is penetrated to form a first through hole and a second through hole. First, an insulating layer is formed on the surface of each semiconductor substrate and the inner walls of the first through holes and the second through holes, and then a patterned electrode layer is formed on the surface of the semiconductor substrate. A conductive material covering the insulating layer is formed in the first through hole and the second through hole, and the conductive material and the patterned electrode layer are electrically connected. A light emitting diode is formed in the second through hole of each semiconductor substrate, and all the light emitting diodes are electrically connected to the conductive material in the second through hole respectively. Finally, all semiconductor substrates are separated to improve yield and simplify structure.

Description

Light-emitting diode packaging structure and manufacturing method thereof

The present invention relates to a packaging technology, and more particularly to a light-emitting diode packaging structure and a manufacturing method thereof.

A light emitting diode (LED) is a light emitting diode made of semiconductor materials. It is possible to use light-emitting diodes to produce a variety of different colors, including red, green, yellow and blue. In operation, when a forward bias is applied to the P-N junction of the semiconductor material, the light emitting diode will emit light. Light-emitting diodes have the advantages of low power consumption, high brightness, low voltage, easy matching with integrated circuits, easy driving, and long service life. Therefore, they have been widely used in lighting devices and various industries.

The traditional packaging method of the light-emitting diode is to connect the electrode of the light-emitting diode and the packaging substrate by wire bonding. As shown in Figure 1, the top electrode 10 of the light-emitting diode 1 is electrically connected to the package substrate 2 through bonding wires. Since multiple light-emitting diodes need to be wire-bonded one by one, for the application requirements of multiple chips, There will be problems that the production speed and yield cannot meet the requirements; and the wire bonding method is difficult to reduce in size and has high impedance, and it is difficult to meet the application requirements of light, thin, small and high brightness.

Therefore, the present invention aims at solving the above-mentioned problems and proposes a light-emitting diode package structure and a manufacturing method thereof to solve the conventional problems.

The invention provides a light-emitting diode packaging structure and a manufacturing method thereof, which improves the yield rate and simplifies the structure.

The present invention provides a light emitting diode packaging structure, which includes a semiconductor substrate, an insulating layer, a first patterned electrode layer, a second patterned electrode layer, and three light emitting diodes. The semiconductor substrate has a first through hole and three second through holes penetrating through the semiconductor substrate, and each second through hole includes a first sub-through hole and a second sub-through hole communicating with each other. The first sub-via and the second sub-via are respectively close to the top surface and the bottom surface of the semiconductor substrate, and the cross-sectional area of the first sub-via is larger than the cross-sectional area of the second sub-via. The insulating layer is arranged on the surface of the semiconductor substrate and the inner walls of the first through hole, the first sub through hole and the second sub through hole. The first through hole and the second sub through hole are filled with conductive material covering the insulating layer. The first patterned electrode layer is arranged on the top surface of the semiconductor substrate and is electrically connected to the conductive material. The second patterned electrode layer is disposed on the bottom surface of the semiconductor substrate and electrically connects the conductive material in the first through hole and the second sub through hole. All the light-emitting diodes are respectively arranged in the first sub-vias of all the second vias, and are respectively electrically connected to the conductive material in the second sub-vias.

In an embodiment of the present invention, the light emitting diode package structure further includes a plurality of conductive pads, which are disposed on the second patterned electrode layer and are electrically connected to the second patterned electrode layer.

In an embodiment of the present invention, each light emitting diode includes a metal composite substrate, an epitaxial electrode layer, an electrode unit and a transparent conductive layer. The metal composite substrate includes a first metal layer and two second metal layers. The two second metal layers are respectively located on the upper and lower surfaces of the first metal layer. The first metal layer is made of nickel-iron alloy, and the second metal layer The system is copper, and the thickness ratio of the second metal layer, the first metal layer, and the second metal layer of the metal composite substrate is 1:2.5~3.5:1. The metal composite substrate is located in the first sub-via. The epitaxial electrode layer is located on the metal composite substrate and located in the first sub-via. The electrode unit is arranged on the epitaxial electrode layer and located in the first sub-via. The transparent conductive layer covers the metal composite substrate, the conductive material, the epitaxial electrode layer, the electrode unit and the first patterned electrode layer, and is electrically connected to the conductive layer. Material, electrode unit and first patterned electrode layer.

In an embodiment of the present invention, the light-emitting diode includes a red light-emitting diode, a green light-emitting diode, and a blue light-emitting diode.

In an embodiment of the present invention, the conductive material is silver glue.

In an embodiment of the present invention, the first patterned electrode layer and the second patterned electrode layer are conductive ink.

In an embodiment of the present invention, a method for manufacturing a light emitting diode package structure is provided. First, a semiconductor wafer is provided, wherein the semiconductor wafer has a plurality of semiconductor substrates. Then, each semiconductor substrate is penetrated to form a first through hole and three second through holes. Each second through hole includes a first sub-through hole and a second sub-through hole that communicate with each other. The sub-via and the second sub-via are respectively close to the top surface and the bottom surface of the semiconductor substrate, and the cross-sectional area of the first sub-via is larger than the cross-sectional area of the second sub-via. An insulating layer is formed on the surface of each semiconductor substrate and the inner walls of the first through hole, the first sub through hole and the second sub through hole. A first patterned electrode layer is formed on the top surface of the semiconductor substrate. A conductive material covering the insulating layer is formed in the first through hole and the second sub-through hole, and the conductive material and the first patterned electrode layer are electrically connected. A second patterned electrode layer is formed on the bottom surface of the semiconductor substrate, and is electrically connected to the conductive material in the second patterned electrode layer, the first through hole and the second sub through hole. Three light-emitting diodes are respectively formed in the first sub-holes of all the second through holes of each semiconductor substrate, and all the light-emitting diodes are electrically connected with the conductive materials in the second sub-holes. Finally, all semiconductor substrates are separated.

In an embodiment of the present invention, the manufacturing method of the light emitting diode package structure further includes forming a plurality of conductive pads on the second patterned electrode layer on each semiconductor substrate, and electrically connecting all the conductive pads with The second patterned electrode layer.

Based on the above, the light-emitting diode package structure and the manufacturing method thereof utilize TSV technology to improve yield and simplify the structure.

In order to make your reviewer have a better understanding and understanding of the structural features of the present invention and the effects achieved, the preferred embodiment diagrams and detailed descriptions are provided here. The description is as follows:

The embodiments of the present invention will be further explained by following relevant drawings. As far as possible, in the drawings and the description, the same reference numerals represent the same or similar components. In the drawings, the shape and thickness may be exaggerated based on simplification and convenient labeling. It can be understood that the elements not specifically shown in the drawings or described in the specification are in the form known to those skilled in the art. Those skilled in the art can make various changes and modifications based on the content of the present invention.

When an element is called "on", it can generally mean that the element is directly on other elements, or there can be other elements existing in both. Conversely, when an element is called "directly in" another element, it cannot have other elements in between. As used herein, the term "and/or" includes any combination of one or more of the listed related items.

The following description of "one embodiment" or "an embodiment" refers to at least one specific element, structure, or feature related to the embodiment. Therefore, multiple descriptions of "one embodiment" or "an embodiment" appearing in various places in the following are not directed to the same embodiment. Furthermore, specific components, structures, and features in one or more embodiments can be combined in an appropriate manner.

Unless otherwise specified, some conditional sentences or words, such as "can", "could", "may", or "may", usually try to express that the embodiment of the case has, But it can also be interpreted as features, elements, or steps that may not be needed. In other embodiments, these features, elements, or steps may not be needed.

FIG. 2 is a structural cross-sectional view of an embodiment of the light-emitting diode package structure of the present invention. Please refer to FIG. 2, the light emitting diode package structure 3 includes a semiconductor substrate 30, an insulating layer 31, a first patterned electrode layer 32, a second patterned electrode layer 33, three light emitting diodes 34 and The conductive material 35, wherein the first patterned electrode layer 32 and the second patterned electrode layer 33 may be conductive ink, but the present invention is not limited thereto. The conductive material 35 includes, but is not limited to, silver paste. All the light-emitting diodes 34 include red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes. The semiconductor substrate 30 has a first through hole 301 and three second through holes 302 penetrating through it, and each second through hole 302 includes a first sub-through hole 3021 and a second sub-through hole 3022 communicating with each other. The first sub-via 3021 and the second sub-via 3022 are respectively close to the top surface and the bottom surface of the semiconductor substrate 30, and the cross-sectional area of the first sub-via 3021 is larger than the cross-sectional area of the second sub-via 3022. The insulating layer 31 is provided on the surface of the semiconductor substrate 30 and the inner walls of the first through hole 301, the first sub-through hole 3021 and the second sub-through hole 3022. The first through hole 301 and the second sub-through hole 3022 are filled with covering The conductive material 35 of the insulating layer 31. The first patterned electrode layer 32 is disposed on the top surface of the semiconductor substrate 30 and is electrically connected to the conductive material 35. The second patterned electrode layer 33 is disposed on the bottom surface of the semiconductor substrate 30 and electrically connects the conductive material 35 in the first through hole 301 and the second sub-through hole 302. All the light-emitting diodes 34 are respectively disposed in the first sub-vias 3021 of all the second vias 302, and are electrically connected to the conductive material 35 in the second sub-vias 3022, respectively. In addition, the light emitting diode package structure 3 may further include a plurality of conductive pads 36 which are disposed on the second patterned electrode layer 33 and are electrically connected to the second patterned electrode layer 33. Assuming that the semiconductor substrate 30 is a silicon substrate, the first through holes 301 and the second through holes 302 are through silicon vias. Therefore, compared to wire bonding technology, the light emitting diode package structure 3 utilizes TSV technology to improve yield and simplify the structure.

In some embodiments of the present invention, each light emitting diode 34 may include a metal composite substrate 341, an epitaxial electrode layer 342, an electrode unit 343, and a transparent conductive layer 344. The metal composite substrate 341 includes a first metal layer and two second metal layers. The second metal layers are respectively located on the upper and lower surfaces of the first metal layer. The first metal layer is made of nickel-iron alloy. Invar, the second metal layer is copper, and the thickness ratio of the second metal layer, the first metal layer, and the second metal layer of the metal composite substrate 341 is 1:2.5~3.5:1. The metal composite substrate 341 is located in the first sub-via 3021. The metal composite substrate 341 has high thermal conductivity, low thermal expansion coefficient and initial magnetic permeability. The epitaxial electrode layer 342 is located on the metal composite substrate 341 and is located in the first sub-via 3021, and the electrode unit 343 is located on the epitaxial electrode layer 342 and is located in the first sub-via 3021. The transparent conductive layer 344 covers the metal composite substrate 341, the conductive material 35, the epitaxial electrode layer 342, the electrode unit 343 and the first patterned electrode layer 32, and electrically connects the conductive material 35, the electrode unit 343 and the first patterned electrode layer 32.

Fig. 3(a) to Fig. 3(h) are cross-sectional views of the structure of each step of an embodiment of manufacturing a light-emitting diode package structure of the present invention. Figure 4 is a top view of the structure corresponding to Figure 3(b). Figure 5 is a top view of the structure corresponding to Figure 3(c). Figure 6 is a top view of the structure corresponding to Figure 3(d). Figure 7 is a top view of the structure corresponding to Figure 3(e). Figure 8 is a bottom view of the structure corresponding to Figure 3(f). Figure 9 is a top view of the structure corresponding to Figure 3(g). Figure 10 is a bottom view of the structure corresponding to Figure 3(h). The following describes the manufacturing method of the light emitting diode structure 3 of the present invention. First, as shown in FIG. 3(a), a semiconductor wafer 4 is provided, wherein the semiconductor wafer 4 has a plurality of semiconductor substrates 30. Next, as shown in FIGS. 3(b) and 4, each semiconductor substrate 30 is penetrated to form a first through hole 301 and three second through holes 302, and each second through hole 302 includes interconnections. A first sub-via 3021 and a second sub-via 3022, wherein the first sub-via 3021 and the second sub-via 3022 are respectively close to the top surface and the bottom surface of the semiconductor substrate 30, the section of the first sub-via 3021 The area is larger than the cross-sectional area of the second sub-via 3022. As shown in FIGS. 3(c) and 5, an insulating layer 31 is formed on the surface of each semiconductor substrate 30 and the inner walls of the first through hole 301, the first sub-through hole 3021, and the second sub-through hole 3022. As shown in FIG. 3(d) and FIG. 6, a first patterned electrode layer 32 is formed on the top surface of the semiconductor substrate 30. As shown in FIG. 3(e) and FIG. 7, the conductive material 35 covering the insulating layer 31 is formed in the first through hole 301 and the second sub-through hole 3022, and electrically connects the conductive material 35 and the first patterning极层32。 Electrode layer 32. As shown in FIG. 3(f) and FIG. 8, a second patterned electrode layer 33 is formed on the bottom surface of the semiconductor substrate 30, and is electrically connected to the second patterned electrode layer 33, the first through hole 301, and the second sub The conductive material 35 in the via 3022. As shown in FIG. 3(g) and FIG. 9, three light emitting diodes 34 are formed in the first sub-vias 3021 of all the second vias 302 of each semiconductor substrate 30, and are electrically connected respectively All the light-emitting diodes 34 and the conductive material 35 in the second sub-via 3022. As shown in FIG. 3(h) and FIG. 10, a plurality of conductive pads 36 are formed on the second patterned electrode layer 33 on each semiconductor substrate 30, and all conductive pads 36 are electrically connected to the second patterned electrode layer 33. The electrode layer 33 is patterned. Finally, all the semiconductor substrates 30 are separated to obtain a plurality of light emitting diode packaging structures 3. Please note that if substantially the same results can be obtained, these steps do not necessarily have to be executed exactly in the order of execution shown in Figure 3(a) to Figure 3(h).

In addition, in the above method, the steps in Figure 3(h) can also be omitted, and a plurality of light-emitting diode package structures 3 can also be obtained.

According to the above embodiment, the light emitting diode package structure and the manufacturing method thereof utilize TSV technology to improve the yield rate and simplify the structure.

The above is only a preferred embodiment of the present invention, and is not used to limit the scope of implementation of the present invention. Therefore, all the shapes, structures, characteristics and spirits described in the scope of the patent application of the present invention are equally changed and modified. , Should be included in the scope of patent application of the present invention.

1: Light-emitting diode 10: Top electrode 2: Package substrate 3: LED package structure 30: Semiconductor substrate 301: first through hole 302: second through hole 3021: The first sub-via 3022: second sub-via 31: Insulation layer 32: The first patterned electrode layer 33: second patterned electrode layer 34: LED 341: Metal composite substrate 342: epitaxial electrode layer 343: Electrode Unit 344: Transparent conductive layer 35: conductive material 36: conductive pad 4: Semiconductor wafer

Figure 1 is a schematic diagram of the structure of the light emitting diode and the packaging substrate of the present invention. FIG. 2 is a structural cross-sectional view of an embodiment of the light-emitting diode package structure of the present invention. Fig. 3(a) to Fig. 3(h) are cross-sectional views of the structure of each step of an embodiment of manufacturing a light-emitting diode package structure of the present invention. Figure 4 is a top view of the structure corresponding to Figure 3(b). Figure 5 is a top view of the structure corresponding to Figure 3(c). Figure 6 is a top view of the structure corresponding to Figure 3(d). Figure 7 is a top view of the structure corresponding to Figure 3(e). Figure 8 is a bottom view of the structure corresponding to Figure 3(f). Figure 9 is a top view of the structure corresponding to Figure 3(g). Figure 10 is a bottom view of the structure corresponding to Figure 3(h).

3: LED package structure

30: Semiconductor substrate

301: first through hole

302: second through hole

3021: The first sub-via

3022: second sub-via

31: Insulation layer

32: The first patterned electrode layer

33: second patterned electrode layer

34: LED

341: Metal composite substrate

342: epitaxial electrode layer

343: Electrode Unit

344: Transparent conductive layer

35: conductive material

36: conductive pad

Claims (10)

A light-emitting diode packaging structure, including: A semiconductor substrate has a first through hole and three second through holes penetrating through itself, each of the second through holes includes a first sub-through hole and a second sub-through hole that communicate with each other, wherein the first through hole The sub-via and the second sub-via are respectively close to the top surface and the bottom surface of the semiconductor substrate, and the cross-sectional area of the first sub-via is larger than the cross-sectional area of the second sub-via; An insulating layer is provided on the surface of the semiconductor substrate and the inner walls of the first through hole, the first sub through hole and the second sub through hole, the first through hole and the second sub through hole are filled with Conductive material covering the insulating layer; A first patterned electrode layer disposed on the top surface of the semiconductor substrate and electrically connected to the conductive material; A second patterned electrode layer disposed on the bottom surface of the semiconductor substrate and electrically connected to the conductive material in the first through hole and the second sub through hole; and Three light-emitting diodes are respectively disposed in the first sub-vias of the second vias, and are respectively electrically connected to the conductive material in the second sub-vias. The light emitting diode package structure according to claim 1, further comprising a plurality of conductive pads, which are provided on the second patterned electrode layer and are electrically connected to the second patterned electrode layer. The light-emitting diode package structure according to claim 1, wherein each light-emitting diode includes: A metal composite substrate comprising a first metal layer and two second metal layers, the second metal layers are respectively located on the upper and lower surfaces of the first metal layer, and the first metal layer is nickel Iron alloy, the second metal layer is copper, the thickness ratio of the second metal layer, the first metal layer, and the second metal layer of the metal composite substrate is 1:2.5~3.5:1, and the metal composite substrate is located In the first sub-through hole; An epitaxial electrode layer, which is located on the metal composite substrate and located in the first sub-via; An electrode unit arranged on the epitaxial electrode layer and located in the first sub-via; and A transparent conductive layer covering the metal composite substrate, the conductive material, the epitaxial electrode layer, the electrode unit and the first patterned electrode layer, and electrically connecting the conductive material, the electrode unit and the first patterned electrode layer Electrode layer. The light-emitting diode package structure according to claim 1, wherein the light-emitting diodes include red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes. The light emitting diode package structure according to claim 1, wherein the conductive material is silver glue. The light emitting diode package structure according to claim 1, wherein the first patterned electrode layer and the second patterned electrode layer are conductive ink. A manufacturing method of a light-emitting diode package structure includes the following steps: Providing a semiconductor wafer, wherein the semiconductor wafer has a plurality of semiconductor substrates; Each of the semiconductor substrates penetrates to form a first through hole and three second through holes, each of the second through holes includes a first sub-through hole and a second sub-through hole that communicate with each other, wherein the first through hole A sub-via and the second sub-via are respectively close to the top surface and the bottom surface of the semiconductor substrate, and the cross-sectional area of the first sub-via is larger than the cross-sectional area of the second sub-via; Forming an insulating layer on the surface of each semiconductor substrate and the inner walls of the first through hole, the first sub through hole and the second sub through hole; Forming a first patterned electrode layer on the top surface of the semiconductor substrate; Forming a conductive material covering the insulating layer in the first through hole and the second sub through hole, and electrically connecting the conductive material and the first patterned electrode layer; Forming a second patterned electrode layer on the bottom surface of the semiconductor substrate, and electrically connecting the conductive material in the second patterned electrode layer, the first through hole and the second sub through hole; Three light-emitting diodes are respectively formed in the first sub-vias of the second through-holes of each semiconductor substrate, and are respectively electrically connected to the light-emitting diodes and the second sub-vias The conductive material; and Separate the semiconductor substrates. The manufacturing method of the light emitting diode package structure according to claim 7, further comprising forming a plurality of conductive pads on the second patterned electrode layer on each of the semiconductor substrates, and electrically connecting the conductive pads Pad and the second patterned electrode layer. The method for manufacturing a light-emitting diode package structure according to claim 7, wherein the light-emitting diodes include red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes. The manufacturing method of the light-emitting diode package structure according to claim 7, wherein each light-emitting diode comprises: A metal composite substrate comprising a first metal layer and two second metal layers, the second metal layers are respectively located on the upper and lower surfaces of the first metal layer, and the first metal layer is nickel Iron alloy, the second metal layer is copper, the thickness ratio of the second metal layer, the first metal layer, and the second metal layer of the metal composite substrate is 1:2.5~3.5:1, and the metal composite substrate is located In the first sub-through hole; An epitaxial electrode layer, which is located on the metal composite substrate and located in the first sub-via; An electrode unit arranged on the epitaxial electrode layer and located in the first sub-via; and A transparent conductive layer covering the metal composite substrate, the conductive material, the epitaxial electrode layer, the electrode unit and the first patterned electrode layer, and electrically connecting the conductive material, the electrode unit and the first patterned electrode layer Electrode layer.

Images