TWI639555B - Preparation method of nitrogen-doped graphene - Google Patents
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Abstract
一種氮摻雜石墨烯之製備方法,包含提供一電漿電解裝置,其中電漿電解裝置具有一含氮電解液,以及電漿電解裝置之一陰極為一石墨電極;以及提供一陰極電流於石墨電極,使石墨電極進行一電漿電解反應以得到氮摻雜石墨烯。上述方法藉由電漿電解程序,可在相對較低電壓、一般壓力、溫度及非常短的時間內,於電解液中添加入含氮之電解質,即可製備氮摻雜石墨烯。A method for preparing nitrogen-doped graphene, comprising providing a plasma electrolysis device, wherein the plasma electrolysis device has a nitrogen-containing electrolyte, and one of the plasma electrolysis devices is a graphite electrode; and providing a cathode current to the graphite The electrode is subjected to a plasma electrolysis reaction to obtain a nitrogen-doped graphene. The above method can prepare nitrogen-doped graphene by adding a nitrogen-containing electrolyte to the electrolyte at a relatively low voltage, a normal pressure, a temperature, and a very short time by a plasma electrolysis process.
Description
本發明是有關一種石墨烯之製備方法,特別是一種氮摻雜石墨烯之製備方法。 The invention relates to a method for preparing graphene, in particular to a method for preparing nitrogen-doped graphene.
石墨烯是最新被發現的奈米碳材料。石墨烯具有許多優良特性,例如線性光譜、高電子遷移率、獨特的光學性質、高延展性、堅韌、以及只有單原子厚度,因此,石墨烯被視為能在光電、能源、化學材料等領域帶來突破性發展的奈米材料。而氮摻雜可打開石墨烯之能隙,改變其電子結構以調整導電類型。氮摻雜之石墨烯不僅能提升其載子密度、導電性能,亦可提高穩定性。此外,表面摻入之氮原子可提高石墨烯對吸附金屬離子之活性以增加石墨烯在電容中之反應性。 Graphene is the latest nanocarbon material discovered. Graphene has many excellent properties, such as linear spectrum, high electron mobility, unique optical properties, high ductility, toughness, and only a single atom thickness. Therefore, graphene is considered to be in the fields of optoelectronics, energy, and chemical materials. A nanomaterial that brings breakthrough development. Nitrogen doping can open the energy gap of graphene and change its electronic structure to adjust the conductivity type. Nitrogen-doped graphene not only improves the carrier density and conductivity, but also improves stability. In addition, the surface-doped nitrogen atoms increase the activity of graphene on the adsorption of metal ions to increase the reactivity of graphene in the capacitance.
然而,一種習知氮摻雜石墨烯之製備方法為化學氣相沉積法,其屬於薄膜製程,因此,此方法較無法以工業等級量產。另一種氮摻雜石墨烯之製備方法是在氨源中熱還原氧化石墨烯,然而,此方法使用翰墨法製成氧化石墨烯,其步驟繁瑣且碳原子晶格受到破壞的程度較高。此外,上述兩種方法皆須在高溫下產出且較為費時。 However, a conventional method for preparing nitrogen-doped graphene is chemical vapor deposition, which is a thin film process, and therefore, this method is less capable of mass production in an industrial grade. Another method of preparing nitrogen-doped graphene is to thermally reduce graphene oxide in an ammonia source. However, this method uses graphene to form graphene oxide, which is cumbersome and has a high degree of damage to the carbon atom lattice. In addition, both of the above methods must be produced at high temperatures and are time consuming.
有鑑於此,提供一種高效率之氮摻雜石墨烯之製備方法便是目前極需努力的目標。 In view of this, it is an urgent need to provide a high-efficiency nitrogen-doped graphene preparation method.
本發明提供一種氮摻雜石墨烯之製備方法,其是在含氮源之電解液中產生水溶液陰極電漿反應,使陰極之石墨剝離並摻雜氮原子而產出氮摻雜石墨烯。本發明具有低成本、易製備、高效率以及環境友善之優點。 The invention provides a method for preparing nitrogen-doped graphene, which is to generate an aqueous solution cathode plasma reaction in an electrolyte containing a nitrogen source, to strip the cathode graphite and dope nitrogen atoms to produce nitrogen-doped graphene. The invention has the advantages of low cost, easy preparation, high efficiency and environmental friendliness.
本發明一實施例之氮摻雜石墨烯之製備方法包含:提供一電漿電解裝置,其包含一含氮源之酸性電解液、一陽極以及一陰極,其中該氮源包含NaNO3、NaNO2、HNO3或以上之組合,且該陰極為一石墨電極;以及提供一陰極電流於該石墨電極,使與該電解液接觸之該石墨電極之表面進行一溶液式陰極電漿反應以得到一氮摻雜石墨烯,其中該電漿電解裝置之輸出電壓小於150V,且輸出電流介於0.1A至2A。 A method for preparing nitrogen-doped graphene according to an embodiment of the present invention comprises: providing a plasma electrolysis device comprising an acidic electrolyte containing a nitrogen source, an anode, and a cathode, wherein the nitrogen source comprises NaNO 3 , NaNO 2 a combination of HNO 3 or more, wherein the cathode is a graphite electrode; and a cathode current is supplied to the graphite electrode, and a surface of the graphite electrode in contact with the electrolyte is subjected to a solution cathodic plasma reaction to obtain a nitrogen gas. Graphene is doped, wherein the plasma electrolysis device has an output voltage of less than 150 V and an output current of 0.1 A to 2 A.
以下藉由具體實施例配合所附的圖式詳加說明,當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。 The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the appended claims.
10‧‧‧電解液 10‧‧‧ electrolyte
20‧‧‧陽極 20‧‧‧Anode
30‧‧‧陰極 30‧‧‧ cathode
40‧‧‧攪拌磁石 40‧‧‧Stirring magnet
圖1為一示意圖,顯示本發明一實施例之氮摻雜石墨烯之製備方法。 1 is a schematic view showing a method of preparing nitrogen-doped graphene according to an embodiment of the present invention.
圖2a、圖2b以及圖2c為一曲線圖,顯示本發明一實施例之製備方法所產出之氮摻雜石墨烯之X射線光電子能譜。 2a, 2b, and 2c are graphs showing the X-ray photoelectron spectroscopy of nitrogen-doped graphene produced by the preparation method of one embodiment of the present invention.
附件1為未剝離前之石墨電極之掃描式電子顯微鏡照片。 Attachment 1 is a scanning electron micrograph of a graphite electrode before being peeled off.
附件2為本發明一實施例之製備方法所產出之氮摻雜石墨烯之掃描式電子顯微鏡照片。 Annex 2 is a scanning electron micrograph of nitrogen-doped graphene produced by the preparation method according to an embodiment of the present invention.
附件3為本發明一實施例之製備方法所產出之氮摻雜石墨烯之穿透式電子顯微鏡照片。 Annex 3 is a transmission electron micrograph of nitrogen-doped graphene produced by the preparation method of one embodiment of the present invention.
附件4為本發明一實施例之製備方法所產出之氮摻雜石墨烯之高倍率穿透式電子顯微鏡照片。 Annex 4 is a high-magnification transmission electron micrograph of nitrogen-doped graphene produced by the preparation method according to an embodiment of the present invention.
附件5至附件8為以穿透式電子顯微鏡下做能量散射光譜儀分析之元素分布圖 Annex 5 to Annex 8 are the element distribution diagrams for energy scattering spectrometer analysis under a transmission electron microscope.
以下將詳述本發明之各實施例,並配合圖式作為例示。除了這些詳細說明之外,本發明亦可廣泛地施行於其它的實施例中,任何所述實施例的輕易替代、修改、等效變化都包含在本發明之範圍內,並以申請專利範圍為準。在說明書的描述中,為了使讀者對本發明有較完整的瞭解,提供了許多特定細節;然而,本發明可能在省略部分或全部特定細節的前提下,仍可實施。此外,眾所周知的步驟或元件並未描述於細節中,以避免對本發明形成不必要之限制。圖式中相同或類似之元件將以相同或類似符號來表示。特別注意的是,圖式僅為示意之用,並非代表元件實際之尺寸或數量,有些細節可能未完全繪出,以求圖式之簡潔。 The embodiments of the present invention will be described in detail below with reference to the drawings. In addition to the detailed description, the present invention may be widely practiced in other embodiments, and any alternatives, modifications, and equivalent variations of the described embodiments are included in the scope of the present invention. quasi. In the description of the specification, numerous specific details are set forth in the description of the invention. In addition, well-known steps or elements are not described in detail to avoid unnecessarily limiting the invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is to be noted that the drawings are for illustrative purposes only and do not represent the actual dimensions or quantities of the components. Some of the details may not be fully drawn in order to facilitate the simplicity of the drawings.
請參照圖1,以說明本發明之一實施例之氮摻雜石墨烯之製備方法。首先,提供一電漿電解裝置,其包含一含氮源之電解液10、一陽極20以及一陰極30,其中陰極30為一石墨電極。陽極20之材料並無特殊限制,其為導電材料之金屬電極即可,舉例而言,陽極20之材料可為不鏽鋼、鈦或白金。陰極30之石 墨電極並不需要事先純化,因此石墨電極之材料可為天然石墨、壓縮石墨、部分氧化石墨或回收石墨。可以理解的是,為了獲得品質較佳之氮摻雜石墨烯,石墨電極之材料可為高純度之石墨。而石墨電極之形狀可為圓柱狀電極或是片狀電極。 Please refer to FIG. 1 to illustrate a method for preparing nitrogen-doped graphene according to an embodiment of the present invention. First, a plasma electrolysis apparatus is provided which comprises an electrolyte 10 containing a nitrogen source, an anode 20 and a cathode 30, wherein the cathode 30 is a graphite electrode. The material of the anode 20 is not particularly limited and may be a metal electrode of a conductive material. For example, the material of the anode 20 may be stainless steel, titanium or platinum. Cathode 30 stone The ink electrode does not need to be purified in advance, so the material of the graphite electrode may be natural graphite, compressed graphite, partially graphite oxide or recycled graphite. It can be understood that in order to obtain nitrogen-doped graphene of better quality, the material of the graphite electrode can be high-purity graphite. The shape of the graphite electrode may be a cylindrical electrode or a sheet electrode.
接著,提供一陰極電流於陰極30之石墨電極,使與電解液10接觸之石墨電極之表面進行一溶液式陰極電漿反應以得到一氮摻雜石墨烯。溶液式陰極電漿反應是發生於陰極30之石墨電極之表面或是附近。於一實施例中,陽極20於電解液10之浸潤面積大於陰極30之石墨電極於電解液10之浸潤面積,較佳者,陽極20於電解液10之浸潤面積遠大於陰極30之石墨電極於電解液10之浸潤面積。舉例而言,陽極20於電解液10之浸潤面積大於陰極30之石墨電極於電解液10之浸潤面積之10倍。 Next, a cathode current is supplied to the graphite electrode of the cathode 30, and a surface of the graphite electrode in contact with the electrolyte 10 is subjected to a solution cathodic plasma reaction to obtain a nitrogen-doped graphene. The solution cathodic plasma reaction occurs at or near the surface of the graphite electrode of the cathode 30. In one embodiment, the wetted area of the anode 20 in the electrolyte 10 is greater than the wetted area of the graphite electrode of the cathode 30 in the electrolyte 10. Preferably, the wetted area of the anode 20 in the electrolyte 10 is much larger than the graphite electrode of the cathode 30. The wetted area of the electrolyte 10. For example, the wetted area of the anode 20 in the electrolyte 10 is greater than 10 times the wetted area of the graphite electrode of the cathode 30 in the electrolyte 10.
為了易於操作及安全考量,於一實施例中,在適當的電解液濃度之條件下,電漿電解裝置之輸出電壓小於150V,亦即可產出陰極電漿即可。較佳者,電漿電解裝置之輸出電壓介於40V至100V。電漿電解裝置之輸出電流則介於0.1A至2A。可以理解的是,在進行溶液式陰極電漿反應時,陰極30之石墨電極會逐漸消耗掉。因此,進行溶液式陰極電漿反應時,可移動陰極30之石墨電極,使其浸入電解液10,以維持穩定之輸出電流。 For ease of operation and safety considerations, in one embodiment, under the condition of appropriate electrolyte concentration, the output voltage of the plasma electrolysis device is less than 150V, and the cathode plasma can be produced. Preferably, the output voltage of the plasma electrolyzer is between 40V and 100V. The output current of the plasma electrolyzer is between 0.1A and 2A. It will be appreciated that the graphite electrode of the cathode 30 will be gradually consumed during the solution cathodic plasma reaction. Therefore, when the solution type cathode plasma reaction is performed, the graphite electrode of the cathode 30 can be moved to be immersed in the electrolyte 10 to maintain a stable output current.
電解液10需達到兩種功能,其一是引起溶液式陰極電漿反應,另一則是提供氮源。於一實施例中,引起溶液式陰極電漿反應之電解質包含提供鹼金屬離子或提供氫離子之電解質。舉例而言,提供鹼金屬離子之電解質可為LiOH、NaOH、KOH、Na2SO4、K2NO3、Na2CO3、K2CO3或以上之組合;提供氫離子之電解質可為硫酸或磷酸。提供氮源之電解質可為NaNO3、NaNO2、HNO3或以上之組合,或者NH4NO3、NH4OH、NH4Cl、(NH4)2SO4或以上之組合。需注 意者,提供氮源之電解質亦可作為引起溶液式陰極電漿反應之電解質,舉例而言,NaNO3、NaNO2、HNO3即同時具備上述兩種功能。 The electrolyte 10 needs to achieve two functions, one of which is to cause a solution type cathodic plasma reaction, and the other is to provide a nitrogen source. In one embodiment, the electrolyte that causes the solution cathodic plasma reaction comprises an electrolyte that provides an alkali metal ion or provides a hydrogen ion. For example, the electrolyte providing the alkali metal ion may be LiOH, NaOH, KOH, Na 2 SO 4 , K 2 NO 3 , Na 2 CO 3 , K 2 CO 3 or a combination thereof; the electrolyte providing the hydrogen ion may be sulfuric acid Or phosphoric acid. The electrolyte providing the nitrogen source may be NaNO 3 , NaNO 2 , HNO 3 or a combination thereof, or NH 4 NO 3 , NH 4 OH, NH 4 Cl, (NH 4 ) 2 SO 4 or a combination thereof. It should be noted that the electrolyte providing the nitrogen source can also be used as the electrolyte for causing the solution type cathode plasma reaction. For example, NaNO 3 , NaNO 2 and HNO 3 have both functions.
可以理解的是,依據不同電解液之導電度、解離度以及濃度,需要不同的電壓來產生陰極電漿反應。電解液之濃度只要在設定的電壓條件下能夠產生出陰極電漿即可。一般而言,電解液之濃度越高,產生陰極電漿反應所需之電壓較低。舉例而言,若電漿電解裝置之輸出電壓設定為60V,可選擇2M的LiOH電解液加入2M的NH4OH。若電漿電解裝置之輸出電壓設定為70V,LiOH電解液之濃度可降低至1.7M,而NH4OH之濃度則與摻雜量多寡有關。 It can be understood that different voltages are required to generate a cathodic plasma reaction depending on the conductivity, dissociation degree and concentration of different electrolytes. The concentration of the electrolyte can be such that the cathode plasma can be produced under the set voltage conditions. In general, the higher the concentration of the electrolyte, the lower the voltage required to produce a cathodic plasma reaction. For example, if the output voltage of the plasma electrolyzer is set to 60V, 2M LiOH electrolyte can be selected to add 2M NH 4 OH. If the output voltage of the plasma electrolyzer is set to 70V, the concentration of the LiOH electrolyte can be reduced to 1.7M, and the concentration of NH 4 OH is related to the amount of doping.
在一實施例中,本發明之氮摻雜石墨烯之製備方法更包含加熱電解液10至攝氏60度至80度,使陰極電漿反應易於發生。舉例而言,電解液10之起始溫度可為攝氏70度。而在進行陰極電漿反應時,則維持電解液10之溫度於攝氏70度至80度。 In one embodiment, the method for preparing nitrogen-doped graphene of the present invention further comprises heating the electrolyte 10 to 60 degrees Celsius to 80 degrees Celsius to facilitate the cathode plasma reaction. For example, the initial temperature of the electrolyte 10 can be 70 degrees Celsius. When the cathodic plasma reaction is carried out, the temperature of the electrolyte 10 is maintained at 70 to 80 degrees Celsius.
可以理解的是,為了提高石墨剝離以及反應的均勻性,可進行溶液式陰極電漿反應時,攪拌電解液10。舉例而言,可在電解液10中使用磁攪拌器驅動攪拌磁石40以攪拌電解液10。最後,將氮摻雜石墨烯自電解液10中分離出來。舉例而言,分離氮摻雜石墨烯之方法可為過濾或離心,但不限於此。 It can be understood that in order to improve the peeling of the graphite and the uniformity of the reaction, the electrolytic solution 10 can be stirred while performing the solution type cathode plasma reaction. For example, the stirring magnet 40 can be driven in the electrolyte 10 using a magnetic stirrer to agitate the electrolyte 10. Finally, nitrogen-doped graphene is separated from the electrolyte 10. For example, the method of separating nitrogen-doped graphene may be filtration or centrifugation, but is not limited thereto.
電解液為可產生溶液式陰極電漿反應之強酸或強鹼,再加入含氮源之電解質。陰極為裁後的高純度石墨片,並連接到一個電壓供應器(負電壓輸出),陰極的寬度以及厚度分別為1cm以及0.013cm,浸潤在電解液液面下之深度為1cm。陽極為白金片,其寬度以及厚度分別為2cm及0.01cm,浸潤在電解液液面底下之深度為10cm。陰極以及陽極連接到一個直流電源及偏置電壓,並逐漸升高電壓到在陰極之石墨片與電解液接觸之表面產生溶液式電漿。在此程序中, 電解液之溫度維持在約攝氏70度至80度。為了提高剝離效率及減少濃度梯度,在電解液中使用磁攪拌器攪拌,並保持在每分鐘200轉的速度。 The electrolyte is a strong acid or a strong base which can produce a solution-type cathodic plasma reaction, and then an electrolyte containing a nitrogen source. The cathode is a cut high-purity graphite sheet and is connected to a voltage supply (negative voltage output) having a width and a thickness of 1 cm and 0.013 cm, respectively, and a depth of 1 cm under the liquid surface of the electrolyte. The anode is a platinum sheet having a width and a thickness of 2 cm and 0.01 cm, respectively, and a depth of 10 cm under the liquid surface of the electrolyte. The cathode and the anode are connected to a DC power source and a bias voltage, and the voltage is gradually increased to produce a solution plasma on the surface of the cathode where the graphite sheet contacts the electrolyte. In this program, The temperature of the electrolyte is maintained at about 70 to 80 degrees Celsius. In order to improve the peeling efficiency and reduce the concentration gradient, a magnetic stirrer was used for stirring in the electrolyte and maintained at a speed of 200 rpm.
當在陰極以及陽極間施加足夠高的電壓,因為陰極與電解液接觸的表面溫度過高(大於水的沸點),因此在陰極表面形成一穩定之水蒸氣包覆,石墨片即開始剝離,同時電解液中之氮源也被即時地摻雜進入所剝離的石墨烯中。需要注意的是,在陰極的尖端位置可降低,以維持電流範圍為約0.1至2A。而浸潤在電解液液面底下1公分之石墨片在短短10到30秒內就會剝離殆盡。冷卻至室溫後,通過真空過濾,使溶液通過多孔玻璃架所支撐的PVDF薄膜(平均孔徑約0.2μm),收集得到膨脹石墨烯薄片。所製備的產品以去離子水洗滌,並在攝氏60度下真空乾燥24小時,再從PVDF膜剝離下來。 When a sufficiently high voltage is applied between the cathode and the anode, since the surface temperature of the cathode in contact with the electrolyte is too high (greater than the boiling point of water), a stable water vapor coating is formed on the surface of the cathode, and the graphite sheet starts to peel off. The nitrogen source in the electrolyte is also immediately doped into the stripped graphene. It should be noted that the tip position of the cathode can be lowered to maintain a current range of about 0.1 to 2A. The graphite sheet, which is immersed in the surface of the electrolyte at a depth of 1 cm, will be peeled off in as little as 10 to 30 seconds. After cooling to room temperature, the solution was passed through a PVDF film (average pore diameter of about 0.2 μm) supported by a porous glass frame by vacuum filtration to collect expanded graphene sheets. The prepared product was washed with deionized water and dried under vacuum at 60 ° C for 24 hours and then peeled off from the PVDF film.
附件1以及附件2顯示在相同倍率下(x12000),以掃瞄式電子顯微鏡觀察石墨片受到溶液式陰極電漿反應剝離前與剝離後所收集產物的樣貌比較。由附件1可看出石墨片是緊密有序的碳原子層堆疊。而附件2則可看出在剝離後,產物成片狀堆疊,猶如落葉狀。 Annex 1 and Annex 2 are shown at the same magnification (x12000), and the appearance of the collected product before and after stripping of the graphite sheet by the solution type cathodic plasma reaction is observed by a scanning electron microscope. It can be seen from Annex 1 that the graphite flakes are a closely packed stack of carbon atom layers. Annex 2 shows that after peeling, the product is stacked in a sheet shape, like a deciduous shape.
附件3以及附件4顯示以上述條件所製備之氮摻雜石墨烯之穿透式電子顯微鏡(TEM)照片。由附件3可看出在產物邊緣與表面的部分皆是石墨烯薄片狀之特徵。附件4則顯示在高倍率下觀察之石墨烯薄片之邊緣照片。 Annex 3 and Annex 4 show transmission electron microscopy (TEM) photographs of nitrogen-doped graphene prepared under the above conditions. It can be seen from Annex 3 that the edges of the product and the surface are all characterized by graphene flakes. Annex 4 shows the photo of the edge of the graphene sheet observed at high magnification.
附件5至附件8是以穿透式電子顯微鏡(TEM)下做能量散射光譜儀(Energy dispersive spectroscopy,EDS)元素分布圖之分析。附件5為暗場TEM圖,白色薄狀部分為上述製備條件所產出之石墨烯。附件6、附件7以及附件8分別為C、O及N元素在這片石墨烯上之分布。由附件8可確認石墨烯上有氮摻雜之現象。 Annexes 5 to 8 are analysis of the energy dispersive spectroscopy (EDS) element distribution maps under a transmission electron microscope (TEM). Annex 5 is a dark field TEM image, and the white thin portion is the graphene produced by the above preparation conditions. Annex 6, Annex 7 and Annex 8 are the distribution of C, O and N elements on this graphene, respectively. From Annex 8, it can be confirmed that there is nitrogen doping on the graphene.
圖2a、圖2b以及圖2c為上述製備條件所產出之氮摻雜石墨烯之X射線光電子能譜,以進一步確認所產出之氮摻雜石墨烯之表面官能基鍵結。其中 圖2a為全圖譜掃描,由圖2a中可明顯觀察到C、N及O的訊號,表示反應前之石墨片在經過氮摻雜剝離後,有氧化及氮摻雜發生。接著將以上元素做細部掃描,在圖2a所示之C1s圖譜中,可將所量測之波峰分出C=C、C-C、C-O/C=N及C-N/C-O之鍵結,如圖2b所示。在圖2a所示之N1s圖譜中,除了證明有氮鍵結之外,將其分峰的結果有Pyridinic-N、Pyrrolic-N及Graphitic-N三種不同的碳氮鍵結型式,如圖2c所示。 2a, 2b, and 2c are X-ray photoelectron spectroscopy of nitrogen-doped graphene produced by the above preparation conditions to further confirm the surface functional group bonding of the produced nitrogen-doped graphene. among them Figure 2a shows the full-spectrum scan. The signals of C, N and O are clearly observed in Figure 2a, indicating that the graphite sheet before the reaction has undergone oxidation and nitrogen doping after nitrogen doping. Then the above elements are scanned in detail. In the C1s map shown in Fig. 2a, the measured peaks can be separated into C=C, CC, CO/C=N and CN/CO bonds, as shown in Fig. 2b. Show. In the N1s map shown in Fig. 2a, in addition to the proof of nitrogen bonding, the peaks are divided into three different carbon-nitrogen bonding patterns of Pyridinic-N, Pyroric-N and Graphicic-N, as shown in Fig. 2c. Show.
綜合上述,本發明之氮摻雜石墨烯之製備方法藉由在含氮源之電解液中產生溶液式陰極電漿反應,而可在相對低溫、一般壓力以及非常短的時間內,使陰極之石墨電極剝離並即時摻雜氮元素以產生氮摻雜石墨烯。因此本發明之製備方法具有低成本、易製備、高效率及環境友善等優點。 In summary, the method for preparing nitrogen-doped graphene of the present invention can produce a cathode cathodic plasma reaction in an electrolyte containing a nitrogen source, and can make the cathode at a relatively low temperature, a general pressure, and a very short time. The graphite electrode is stripped and immediately doped with nitrogen to produce nitrogen-doped graphene. Therefore, the preparation method of the invention has the advantages of low cost, easy preparation, high efficiency and environmental friendliness.
以上所述之實施例僅是為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。 The embodiments described above are only intended to illustrate the technical idea and the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
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