TWI637371B - Shift register circuit - Google Patents
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- TWI637371B TWI637371B TW106146179A TW106146179A TWI637371B TW I637371 B TWI637371 B TW I637371B TW 106146179 A TW106146179 A TW 106146179A TW 106146179 A TW106146179 A TW 106146179A TW I637371 B TWI637371 B TW I637371B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
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- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
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Abstract
第n級移位暫存器具有輸入單元、上拉單元、下拉控制單元、及下拉單元。輸入單元依據第(n-i)級掃描信號控制第一節點電壓。上拉單元依據第一時脈信號輸出第n級掃描信號至輸出端。下拉控制單元依據第二時脈信號產生下拉控制信號。下拉單元依據下拉控制信號調整輸出端電壓。上拉單元包括耦接於第一節點與第二節點之間的電壓耦合單元、及第一電晶體,其控制端耦接第(n-j)級的第一節點、第一端接收第一時脈信號、第二端耦接第二節點。下拉單元包括第二電晶體,其第一端耦接第二節點、第二端耦接參考電壓、控制端接收下拉控制信號。 The n-th stage shift register has an input unit, a pull-up unit, a pull-down control unit, and a pull-down unit. The input unit controls the first node voltage according to the (n-i) -th scanning signal. The pull-up unit outputs the n-th scanning signal to the output terminal according to the first clock signal. The pull-down control unit generates a pull-down control signal according to the second clock signal. The pull-down unit adjusts the output terminal voltage according to the pull-down control signal. The pull-up unit includes a voltage coupling unit coupled between the first node and the second node, and a first transistor, and a control terminal thereof is coupled to the first node of the (nj) th stage, and the first terminal receives the first clock The signal and the second terminal are coupled to the second node. The pull-down unit includes a second transistor, a first terminal of which is coupled to a second node, a second terminal of which is coupled to a reference voltage, and a control terminal which receives a pull-down control signal.
Description
本發明是有關於一種顯示驅動電路,且特別是有關於一種使用移位暫存器的顯示驅動電路。 The present invention relates to a display driving circuit, and more particularly to a display driving circuit using a shift register.
用於顯示面板的顯示驅動電路包括閘極驅動電路(gate driver),閘極驅動電路可利用多個移位暫存器依序地輸出多個掃描信號,掃描信號分別傳送至顯示面板的多個閘極線以驅動面板的像素陣列。隨著顯示面板的影像解析度日漸提升以及畫面更新率(frame rate)的增加,如何設計適合的移位暫存器乃目前業界致力課題之一。 A display driving circuit for a display panel includes a gate driver circuit. The gate driving circuit can sequentially output a plurality of scanning signals by using a plurality of shift registers, and the scanning signals are respectively transmitted to a plurality of display panel. The gate lines drive the pixel array of the panel. With the improvement of the image resolution of the display panel and the increase of the frame rate, how to design a suitable shift register is one of the current issues in the industry.
本發明係有關於一種移位暫存電路,可以有效減少輸出掃描信號的下降時間。 The invention relates to a shift temporary storage circuit, which can effectively reduce the falling time of the output scanning signal.
根據本發明之一方面,提出一種移位暫存電路,包括多級移位暫存器,其中的第n級移位暫存器包括:輸入單元、上拉單元、下拉控制單元、及下拉單元。輸入單元依據第(n-i)級掃描信號控制第一節點的電壓位準。上拉單元耦接於第一節點與輸出端之間,依據第一時脈信號輸出第n級掃描信號至輸出端。下拉 控制單元耦接第一節點,依據第二時脈信號產生下拉控制信號。下拉單元耦接第一節點,依據下拉控制信號將輸出端的電壓位準調整至第一參考電壓。上拉單元包括:第一電晶體及電壓耦合單元。第一電晶體的控制端耦接第(n-j)級的第一節點,第一電晶體的第一端用以接收第一時脈信號,第一電晶體的第二端耦接一第二節點。電壓耦合單元耦接於第一節點與第二節點之間。下拉單元包括第二電晶體,第二電晶體的第一端耦接第二節點,第二電晶體的第二端耦接至第一參考電壓,第二電晶體的控制端用以接收下拉控制信號。其中n,i,j皆為正整數。 According to an aspect of the present invention, a shift register circuit is provided, which includes a multi-stage shift register. The n-th stage shift register includes: an input unit, a pull-up unit, a pull-down control unit, and a pull-down unit. . The input unit controls the voltage level of the first node according to the (n-i) -th scanning signal. The pull-up unit is coupled between the first node and the output terminal, and outputs the n-th scanning signal to the output terminal according to the first clock signal. drop down The control unit is coupled to the first node and generates a pull-down control signal according to the second clock signal. The pull-down unit is coupled to the first node and adjusts the voltage level of the output terminal to the first reference voltage according to the pull-down control signal. The pull-up unit includes a first transistor and a voltage coupling unit. The control terminal of the first transistor is coupled to the first node of the (nj) stage, the first terminal of the first transistor is used to receive the first clock signal, and the second terminal of the first transistor is coupled to a second node . The voltage coupling unit is coupled between the first node and the second node. The pull-down unit includes a second transistor, a first terminal of the second transistor is coupled to the second node, a second terminal of the second transistor is coupled to the first reference voltage, and a control terminal of the second transistor is used to receive the pull-down control signal. Where n, i, j are all positive integers.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下: In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:
1‧‧‧移位暫存電路 1‧‧‧shift temporary storage circuit
101‧‧‧輸入單元 101‧‧‧input unit
102、102'‧‧‧上拉單元 102, 102 ' ‧‧‧ Pull-up unit
103‧‧‧下拉控制單元 103‧‧‧pull-down control unit
104、104'‧‧‧下拉單元 104,104 '‧‧‧ down unit
105‧‧‧電壓耦合單元 105‧‧‧Voltage coupling unit
106‧‧‧重置單元 106‧‧‧Reset unit
A(n)‧‧‧下拉控制信號 A (n) ‧‧‧pull-down control signal
D2U‧‧‧反向掃描控制信號 D2U‧‧‧Reverse scan control signal
G(1)、G(2)、G(3)、G(4)、G(n-i)、G(n)、G(n-2)、G(n-1)、G(n+2)‧‧‧輸出端 G (1), G (2), G (3), G (4), G (ni), G (n), G (n-2), G (n-1), G (n + 2) ‧‧‧ Output
HC1、HC2、HC3、HC4‧‧‧時脈信號 HC1, HC2, HC3, HC4‧‧‧ clock signal
M1、M2、M3、M4、M5、M6、M7、M8、M9、M10、M11、M12、M13、M14、M15‧‧‧電晶體 M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, M14, M15‧‧‧ transistor
Q(n)、Q(n-j)、Q(n-1)‧‧‧第一節點 Q (n), Q (n-j), Q (n-1) ‧‧‧ first node
R1‧‧‧電阻 R1‧‧‧ resistance
RST‧‧‧重置信號 RST‧‧‧ reset signal
SR(1)、SR(2)、SR(3)、SR(4)、SR(n)‧‧‧移位暫存器 SR (1), SR (2), SR (3), SR (4), SR (n) ‧‧‧ shift register
ST(n)‧‧‧第二節點 ST (n) ‧‧‧Second Node
t1、t2、t3、t4、t5、t6、t7、t8‧‧‧時間點 t1, t2, t3, t4, t5, t6, t7, t8
U2D‧‧‧順向掃描控制信號 U2D‧‧‧ Forward Scan Control Signal
VGH‧‧‧第二參考電壓 VGH‧‧‧second reference voltage
VGL‧‧‧第一參考電壓 VGL‧‧‧first reference voltage
第1圖繪示依照本發明第一實施例的移位暫存電路示意圖。 FIG. 1 is a schematic diagram of a shift register circuit according to a first embodiment of the present invention.
第2圖繪示依照本發明第一實施例的第n級移位暫存器示意圖。 FIG. 2 is a schematic diagram of an n-th stage shift register according to the first embodiment of the present invention.
第3圖繪示依照本發明第一實施例的上拉單元示意圖。 FIG. 3 is a schematic diagram of a pull-up unit according to the first embodiment of the present invention.
第4圖繪示依照本發明第一實施例的下拉單元示意圖。 FIG. 4 is a schematic diagram of a pull-down unit according to the first embodiment of the present invention.
第5圖繪示對應於第2圖電路的信號時序圖。 FIG. 5 shows a timing diagram of signals corresponding to the circuit of FIG. 2.
第6圖繪示依照本發明第一實施例包含重置單元的第n級移位暫存器示意圖。 FIG. 6 is a schematic diagram of an n-th stage shift register including a reset unit according to the first embodiment of the present invention.
第7圖繪示依照本發明第一實施例單向掃描的第n級移位暫存器電路圖。 FIG. 7 is a circuit diagram of the n-th stage shift register for unidirectional scanning according to the first embodiment of the present invention.
第8圖繪示依照本發明第一實施例雙向掃描的第n級移位暫存器電路圖。 FIG. 8 is a circuit diagram of an n-th stage shift register for bidirectional scanning according to the first embodiment of the present invention.
第9圖繪示對應於第8圖電路於反向掃描操作時的信號時序圖。 FIG. 9 shows a signal timing diagram corresponding to the circuit in FIG. 8 during a reverse scanning operation.
以下將以圖式及詳細敘述清楚說明本揭示內容之精神,任何所屬技術領域中具有通常知識者在瞭解本揭示內容之實施例後,當可由本揭示內容所教示之技術,加以改變及修飾,其並不脫離本揭示內容之精神與範圍。 The following will clearly illustrate the spirit of the present disclosure with diagrams and detailed descriptions. Any person with ordinary knowledge in the technical field who understands the embodiments of the present disclosure can be changed and modified by the techniques taught in the present disclosure. It does not depart from the spirit and scope of this disclosure.
關於本文中所使用之『第一』、『第二』、…等,並非特別指稱次序或順位的意思,亦非用以限定本發明,其僅為了區別以相同技術用語描述的元件或操作。 Regarding the "first", "second", ..., etc. used herein, it does not mean a specific order or order, nor is it used to limit the present invention, which is only for distinguishing elements or operations described in the same technical terms.
關於本文中所使用之『電性耦接』,可指二或多個元件相互直接作實體或電性接觸,或是相互間接作實體或電性接觸,而『電性耦接』還可指二或多個元件相互操作或動作。 As used in this article, "electrical coupling" can mean that two or more components make direct physical or electrical contact with each other, or indirectly make physical or electrical contact with each other, and "electrical coupling" can also mean Two or more elements operate or act on each other.
關於本文中所使用之『包含』、『包含』、『具有』、『含有』等等,均為開放性的用語,即意指包含但不限於。 The terms "including", "including", "having", "containing" and the like used in this article are all open terms, which means including but not limited to.
關於本文中所使用之『及/或』,係包含所述事物的任一或全部組合。 As used herein, "and / or" includes any and all combinations of the stated matters.
關於本文中所使用之用詞(terms),除有特別註明 外,通常具有每個用詞使用在此領域中、在此揭露之內容中與特殊內容中的平常意義。某些用以描述本揭露之用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本揭露之描述上額外的引導。 Terms used in this article, unless otherwise specified In addition, it usually has the ordinary meaning of each word used in this field, in the content disclosed here, and in special content. Certain terms used to describe this disclosure are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art on the description of this disclosure.
第1圖繪示依照本發明第一實施例的移位暫存電路1示意圖。移位暫存電路1包括多級移位暫存器SR(1)、SR(2)、SR(3)、SR(4)等等,第1圖雖繪示四級移位暫存器,然而應當理解移位暫存電路1包括的移位暫存器數量不僅限於四級,其數量可以相關於顯示面板的閘極線數量。多個移位暫存器SR(1)~SR(4)依序串接,在各自的輸出端G(1)~G(4)分別輸出掃描信號傳送至顯示面板的閘極線。 FIG. 1 is a schematic diagram of a shift register circuit 1 according to a first embodiment of the present invention. The shift register circuit 1 includes multi-stage shift registers SR (1), SR (2), SR (3), SR (4), and so on. Although FIG. 1 shows a four-stage shift register, However, it should be understood that the number of shift registers included in the shift register circuit 1 is not limited to four stages, and the number may be related to the number of gate lines of the display panel. The multiple shift registers SR (1) ~ SR (4) are connected in series, and the scanning signals are output to the gate lines of the display panel at the respective output terminals G (1) ~ G (4).
第1圖為表示多個移位暫存器彼此連接的簡化示意圖,移位暫存器之間的信號傳輸不僅限於第1圖的方式。以順向掃描(forward scanning)為例,移位暫存器SR(2)可以接收來自移位暫存器SR(1)的信號,例如是輸出端G(1)的掃描信號或是移位暫存器SR(1)內部的其他信號,據以使移位暫存器SR(2)產生輸出端G(2)的掃描信號。而移位暫存器SR(3)可以接收來自移位暫存器SR(1)及/或移位暫存器SR(2)的信號,據以產生輸出端G(3)的掃描信號。亦即,各個移位暫存器所接收的信號不僅限於來自於前一級移位暫存器,亦可以來自前兩級的移位暫存器。以反向掃描(reverse scanning)為例,移位暫存器SR(1)可以接收來自移位暫 存器SR(2)及/或移位暫存器SR(3)的信號,據以產生輸出端G(1)的掃描信號。本發明並不以此為限。 FIG. 1 is a simplified schematic diagram showing the connection of a plurality of shift registers, and the signal transmission between the shift registers is not limited to the method of FIG. 1. Taking forward scanning as an example, the shift register SR (2) can receive signals from the shift register SR (1), such as the scan signal at the output G (1) or the shift Other signals in the register SR (1) cause the shift register SR (2) to generate a scanning signal at the output terminal G (2). The shift register SR (3) can receive signals from the shift register SR (1) and / or the shift register SR (2) to generate a scanning signal at the output terminal G (3). That is, the signals received by each shift register are not limited to the shift register from the previous stage, but can also come from the shift registers of the first two stages. Taking reverse scanning as an example, the shift register SR (1) can receive data from the shift register. The signals of the register SR (2) and / or the shift register SR (3) are used to generate the scanning signal of the output terminal G (1). The invention is not limited to this.
此外,各個移位暫存器SR(1)~SR(4)可以接收相同或不同的時脈信號。舉例而言,若是於移位暫存電路1使用兩種相位的第一時脈信號與第二時脈信號,且第一時脈信號與第二時脈信號具有相位差(phase offset),則移位暫存器SR(1)與SR(3)可依據第一時脈信號產生輸出端G(1)與G(3)的掃描信號,移位暫存器SR(2)與SR(4)可依據第二時脈信號產生輸出端G(2)與G(4)的掃描信號。若是使用四種相位(multi-phase)的時脈信號,第一時脈信號、第二時脈信號、第三時脈信號、與第四時脈信號彼此之間具有相位差,則移位暫存器SR(1)可依據第一時脈信號產生輸出端G(1)的掃描信號,移位暫存器SR(2)可依據第二時脈信號產生輸出端G(2)的掃描信號,移位暫存器SR(3)可依據第三時脈信號產生輸出端G(3)的掃描信號,移位暫存器SR(4)可依據第四時脈信號產生輸出端G(4)的掃描信號。當移位暫存電路1串接更多級的移位暫存器時,其餘移位暫存器的作動可根據上述內容以此類推,於此不再重複贅述。 In addition, each shift register SR (1) ~ SR (4) can receive the same or different clock signals. For example, if the first clock signal and the second clock signal of two phases are used in the shift register circuit 1, and the first clock signal and the second clock signal have a phase offset, then The shift registers SR (1) and SR (3) can generate the scanning signals of the output terminals G (1) and G (3) according to the first clock signal, and the shift registers SR (2) and SR (4) ) The scan signals of the output terminals G (2) and G (4) can be generated according to the second clock signal. If four-phase (multi-phase) clock signals are used, the first clock signal, the second clock signal, the third clock signal, and the fourth clock signal have phase differences from each other, the shift is temporarily The register SR (1) can generate the scanning signal of the output terminal G (1) according to the first clock signal, and the shift register SR (2) can generate the scanning signal of the output terminal G (2) according to the second clock signal. The shift register SR (3) can generate the scanning signal of the output terminal G (3) according to the third clock signal, and the shift register SR (4) can generate the output terminal G (4) of the fourth clock signal. ) Scan signal. When the shift register circuit 1 is connected with more stages of shift registers in series, the operation of the remaining shift registers can be deduced by analogy according to the above content, and the details are not repeated here.
請參考第2圖,第2圖繪示依照本發明第一實施例的第n級移位暫存器示意圖。第n級移位暫存器SR(n)包括:輸入單元101、上拉單元102、下拉控制單元103、及下拉單元104。輸入單元101可耦接至第(n-i)級移位暫存器的輸出端G(n-i),依據第(n-i)級掃描信號控制第一節點Q(n)的電壓位準,i為正整數。例 如當i=1時,輸入單元101接收第(n-1)級移位暫存器SR(n-1)輸出端G(n-1)提供的第(n-1)級掃描信號;當i=2時,輸入單元101接收第(n-2)級移位暫存器SR(n-2)輸出端G(n-2)提供的第(n-2)級掃描信號。上拉單元102耦接於第一節點Q(n)與輸出端G(n)之間,上拉單元102依據時脈信號HC1輸出第n級掃描信號至輸出端G(n)。下拉控制單元103耦接第一節點Q(n),下拉控制單元103依據時脈信號HC3產生下拉控制信號A(n)。下拉單元104耦接第一節點Q(n),下拉單元104依據下拉控制信號A(n)將輸出端G(n)的電壓位準調整至第一參考電壓VGL,例如為低參考電壓。其中時脈信號HC1與時脈信號HC3之間的相位差例如為180度。其中n為正整數。 Please refer to FIG. 2, which illustrates a schematic diagram of an n-th stage shift register according to the first embodiment of the present invention. The n-th stage shift register SR (n) includes an input unit 101, a pull-up unit 102, a pull-down control unit 103, and a pull-down unit 104. The input unit 101 may be coupled to the output terminal G (ni) of the (ni) th stage shift register, and control the voltage level of the first node Q (n) according to the (ni) th stage scanning signal, where i is a positive integer . example For example, when i = 1, the input unit 101 receives the (n-1) th stage scanning signal provided by the (n-1) th stage shift register SR (n-1) output terminal G (n-1); when When i = 2, the input unit 101 receives the (n-2) th stage scanning signal provided by the output terminal G (n-2) of the (n-2) th stage shift register SR (n-2). The pull-up unit 102 is coupled between the first node Q (n) and the output terminal G (n). The pull-up unit 102 outputs an n-th stage scanning signal to the output terminal G (n) according to the clock signal HC1. The pull-down control unit 103 is coupled to the first node Q (n), and the pull-down control unit 103 generates a pull-down control signal A (n) according to the clock signal HC3. The pull-down unit 104 is coupled to the first node Q (n). The pull-down unit 104 adjusts the voltage level of the output terminal G (n) to the first reference voltage VGL according to the pull-down control signal A (n), such as a low reference voltage. The phase difference between the clock signal HC1 and the clock signal HC3 is, for example, 180 degrees. Where n is a positive integer.
移位暫存器SR(n)內第一節點Q(n)的電壓位準相關於移位暫存器SR(n)的操作模式,例如當第一節點Q(n)為低電壓位準時,移位暫存器SR(n)為非操作狀態,輸出端G(n)維持低電壓位準;當第一節點Q(n)為高電壓位準時,即表示要驅動對應的閘極線,移位暫存器SR(n)為操作狀態,輸出端G(n)會提供高電壓位準的掃描信號。 The voltage level of the first node Q (n) in the shift register SR (n) is related to the operation mode of the shift register SR (n), for example, when the first node Q (n) is at a low voltage level , The shift register SR (n) is in a non-operation state, and the output terminal G (n) maintains a low voltage level; when the first node Q (n) is a high voltage level, it means that the corresponding gate line is to be driven The shift register SR (n) is in an operating state, and the output terminal G (n) will provide a scanning signal at a high voltage level.
上拉單元102可使得輸出端G(n)的電壓位準上升,下拉單元104可使得輸出端G(n)的電壓位準下降。上拉單元102包括電晶體M1及電壓耦合單元105。電晶體M1的控制端耦接第(n-j)級的第一節點Q(n-j),其中j為正整數。舉例而言,第(n-j)級移位暫存器SR(n-j)與第n級移位暫存器SR(n)具有相同的結 構,在第(n-j)級移位暫存器SR(n-j)內部同樣具有第一節點Q(n-j),位置即如同第2圖所示第n級移位暫存器SR(n)內部第一節點Q(n)的位置。第n級移位暫存器SR(n)的電晶體M1,其控制端耦接第(n-j)級移位暫存器SR(n-j)的第一節點Q(n-j)。電晶體M1的第一端用以接收時脈信號HC1,電晶體M1的第二端耦接第二節點ST(n)。電壓耦合單元105耦接於第一節點Q(n)與第二節點ST(n)之間,電壓耦合單元105可以例如是電容。 The pull-up unit 102 may increase the voltage level of the output terminal G (n), and the pull-down unit 104 may cause the voltage level of the output terminal G (n) to decrease. The pull-up unit 102 includes a transistor M1 and a voltage coupling unit 105. The control terminal of the transistor M1 is coupled to the first node Q (n-j) of the (n-j) stage, where j is a positive integer. For example, the (n-j) th stage shift register SR (n-j) has the same result as the nth stage shift register SR (n). Structure, there is also a first node Q (nj) inside the (nj) -stage shift register SR (nj), and the position is the same as that in the n-stage shift register SR (n) shown in FIG. 2 The position of a node Q (n). The control terminal of the transistor M1 of the n-th stage shift register SR (n) is coupled to the first node Q (n-j) of the (n-j) -stage shift register SR (n-j). The first terminal of the transistor M1 is used to receive the clock signal HC1, and the second terminal of the transistor M1 is coupled to the second node ST (n). The voltage coupling unit 105 is coupled between the first node Q (n) and the second node ST (n). The voltage coupling unit 105 may be, for example, a capacitor.
下拉單元104耦接第一節點Q(n)、第二節點ST(n)、及輸出端G(n)。下拉單元104包括電晶體M2,電晶體M2的第一端耦接第二節點ST(n),電晶體M2的第二端耦接至第一參考電壓VGL,電晶體M2的控制端用以接收下拉控制信號A(n)。在第2圖所示的實施例中,電晶體皆是使用n型薄膜電晶體(n-type thin-film transistor,以下簡稱N型電晶體)作為例子,然而應當理解圖中所示的電晶體亦可使用其他類型的電晶體取代,而驅動波型也應該作適應性改變。本說明書以下將使用N型電晶體作為範例,以維持說明一致並且易於理解。 The pull-down unit 104 is coupled to a first node Q (n), a second node ST (n), and an output terminal G (n). The pull-down unit 104 includes a transistor M2, a first terminal of the transistor M2 is coupled to the second node ST (n), a second terminal of the transistor M2 is coupled to a first reference voltage VGL, and a control terminal of the transistor M2 is used for receiving Pull-down control signal A (n). In the embodiment shown in FIG. 2, the transistors are all using n-type thin-film transistors (hereinafter referred to as N-type transistors) as examples, but it should be understood that the transistors shown in the figure Other types of transistors can also be used instead, and the driving mode should be changed adaptively. In this description, N-type transistors will be used as an example to keep the description consistent and easy to understand.
第3圖繪示依照本發明第一實施例的上拉單元示意圖。於本發明揭露之一實施例,上拉單元102包括電晶體M3,電晶體M3的控制端耦接第一節點Q(n),電晶體M3的第一端用以接收第一時脈信號HC1,電晶體M3的第二端耦接輸出端G(n)用以輸出第n級掃描信號。如第3圖所示,電晶體M3可作為輸出端G(n)的上拉電晶體使用。當第一節點Q(n)為高電壓位準時,電晶體M3 導通,電晶體M3可藉由時脈信號HC1的時序,將輸出端G(n)的電壓位準拉高至接近於時脈信號HC1的高電壓位準用以輸出第n級掃描信號。需說明的是,第3圖所示僅為一種上拉單元102的實施例,電晶體M3亦可取代為多個電晶體的組合,本發明並不以此為限。 FIG. 3 is a schematic diagram of a pull-up unit according to the first embodiment of the present invention. In an embodiment disclosed by the present invention, the pull-up unit 102 includes a transistor M3, the control terminal of the transistor M3 is coupled to the first node Q (n), and the first terminal of the transistor M3 is used to receive the first clock signal HC1 The second terminal of the transistor M3 is coupled to the output terminal G (n) for outputting the n-th scanning signal. As shown in FIG. 3, the transistor M3 can be used as a pull-up transistor at the output terminal G (n). When the first node Q (n) is at a high voltage level, the transistor M3 When the transistor M3 is turned on, the voltage level of the output terminal G (n) can be pulled up to a high voltage level close to the clock signal HC1 by using the timing of the clock signal HC1 to output the n-th scanning signal. It should be noted that FIG. 3 shows only one embodiment of the pull-up unit 102, and the transistor M3 can also be replaced by a combination of multiple transistors, which is not limited in the present invention.
第4圖繪示依照本發明第一實施例的下拉單元示意圖。於本發明揭露之一實施例,下拉單元104具有電晶體M4及電晶體M5,其中每個電晶體均具有第一端、第二端、及控制端。電晶體M2、電晶體M4、電晶體M5的控制端皆耦接於下拉控制信號A(n),電晶體M5的第一端耦接於第一節點Q(n)以作為第一節點Q(n)的下拉電晶體,電晶體M2的第一端耦接於第二節點ST(n)以作為第二節點ST(n)的下拉電晶體,電晶體M4的第一端耦接於輸出端G(n)以作為輸出端G(n)的下拉電晶體。第4圖所示僅為一種下拉單元104的實施例,各個節點的下拉電晶體亦可取代為多個電晶體的組合,本發明並不以此為限。 FIG. 4 is a schematic diagram of a pull-down unit according to the first embodiment of the present invention. In an embodiment disclosed by the present invention, the pull-down unit 104 has a transistor M4 and a transistor M5, wherein each transistor has a first terminal, a second terminal, and a control terminal. The control terminals of transistor M2, transistor M4, and transistor M5 are all coupled to the pull-down control signal A (n). The first terminal of transistor M5 is coupled to the first node Q (n) as the first node Q ( n) a pull-down transistor, the first terminal of transistor M2 is coupled to the second node ST (n) as a pull-down transistor of the second node ST (n), and the first terminal of transistor M4 is coupled to the output terminal G (n) is a pull-down transistor as the output terminal G (n). FIG. 4 shows only an embodiment of the pull-down unit 104, and the pull-down transistors of each node can also be replaced by a combination of multiple transistors, which is not limited in the present invention.
以下將說明第n級移位暫存器SR(n)的操作模式,請參考第5圖,第5圖繪示對應於第2圖電路的信號時序圖,其中上拉單元102可參考第3圖、下拉單元104可參考第4圖,於此例中使用四種相位的時脈信號HC1、HC2、HC3、HC4,彼此之間具有的相位差為90度。第一節點Q(n)的電壓位準提升(從時間點t3到時間點t6)可以區分為三個階段,以下對於各階段分別描述。在以下的 範例中,係使用i=2以及j=2作為範例說明,然而本發明並不限於此,於不同實施例中亦可選擇耦接至不同的前級移位暫存器。 The operation mode of the n-th stage shift register SR (n) will be described below. Please refer to FIG. 5. FIG. 5 shows a signal timing diagram corresponding to the circuit of FIG. 2. The pull-up unit 102 can refer to FIG. The drawing and pull-down unit 104 can refer to FIG. 4. In this example, the clock signals HC1, HC2, HC3, and HC4 with four phases are used, and the phase difference between them is 90 degrees. The voltage level improvement of the first node Q (n) (from the time point t3 to the time point t6) can be divided into three stages, and each stage is described below. In the following In the examples, i = 2 and j = 2 are used as examples. However, the present invention is not limited to this, and may be coupled to different front-stage shift registers in different embodiments.
於第一階段:時間點t3到時間點t5,第一節點Q(n)電壓是由輸入單元101依據第(n-2)級移位暫存器輸出端G(n-2)提供的第(n-2)級掃描信號而提升。輸出端G(n-2)的掃描信號在時間點t3電壓上升,使得第一節點Q(n)在時間點t3電壓上升。 In the first stage: from time point t3 to time point t5, the voltage of the first node Q (n) is the first voltage provided by the input unit 101 according to the (n-2) th stage shift register output terminal G (n-2). (n-2) level scanning signals. The voltage of the scan signal at the output terminal G (n-2) rises at time point t3, so that the voltage of the first node Q (n) rises at time point t3.
於第二階段:時間點t5到時間點t6,時脈信號HC1在時間點t5時上升到高電壓位準,此時第(n-1)級的第一節點Q(n-1)仍為高電壓,電晶體M1為導通,時脈信號HC1會傳送到第二節點ST(n)。經由電壓耦合單元105的耦合效應,以及電晶體M3的耦合效應,於時間點t5時電壓上升的時脈信號HC1,會使得第一節點Q(n)的電壓更進一步上升。如第5圖所示,第一節點Q(n)在第二階段的電壓比在第一階段的電壓更高。 In the second stage: from time point t5 to time point t6, the clock signal HC1 rises to a high voltage level at time point t5, at this time the first node Q (n-1) of the (n-1) th stage is still At high voltage, the transistor M1 is turned on, and the clock signal HC1 is transmitted to the second node ST (n). Through the coupling effect of the voltage coupling unit 105 and the coupling effect of the transistor M3, the clock signal HC1 whose voltage rises at the time point t5 will cause the voltage of the first node Q (n) to rise further. As shown in Fig. 5, the voltage of the first node Q (n) in the second stage is higher than that in the first stage.
於第三階段:時間點t6到時間點t7,由於時脈信號HC1電壓下降且第(n-1)級的第一節點Q(n-1)電壓下降,此時第一節點Q(n)的電壓會低於第二階段。然而,第一節點Q(n)於第三階段的電壓會高於第一階段的電壓,詳細說明如下。 In the third stage: from time point t6 to time point t7, the voltage of the clock signal HC1 decreases and the voltage of the first node Q (n-1) of the (n-1) th stage decreases. At this time, the first node Q (n) The voltage will be lower than the second stage. However, the voltage of the first node Q (n) in the third stage will be higher than the voltage in the first stage, as described in detail below.
請先觀察第(n-1)級的第一節點Q(n-1)電壓變化,在時間點t5時,時脈信號HC1電壓上升,經由如第3圖所示電晶體M1的耦合效應,可以稍微提高第(n-1)級的第一節點Q(n-1)的電壓。同樣的,在第(n+1)級移位暫存器SR(n+1)內,時脈信號HC2於時間點t6的電壓上升,經由第(n+1)級移位暫存器SR(n+1)內部 的電晶體M1的耦合效應,可以稍微提高第n級的第一節點Q(n)的電壓。 Please first observe the voltage change at the first node Q (n-1) of the (n-1) th stage. At the time point t5, the voltage of the clock signal HC1 rises, via the coupling effect of the transistor M1 as shown in FIG. 3, The voltage of the first node Q (n-1) of the (n-1) th stage can be increased slightly. Similarly, in the (n + 1) -th stage shift register SR (n + 1), the voltage of the clock signal HC2 at time point t6 rises and passes through the (n + 1) -stage shift register SR (n + 1) Internal The coupling effect of the transistor M1 can slightly increase the voltage of the first node Q (n) of the n-th stage.
如上所述,藉由電晶體M1,可以使得第一節點Q(n)在第三階段的電壓位準提高,如此即提高了電晶體M3閘極到源極的電壓差,等效減小了電晶體M3的電阻值,可以使得流經電晶體M3的電流變大。此時電晶體M4將輸出端G(n)的電壓位準往下拉至第一參考電壓VGL,由於電流變大,放電速度變快,而可以減少輸出端G(n)掃描信號的下降時間(fall time),能夠實現更快速的操作。亦即,第一節點Q(n)第三階段的電壓可對應到輸出端G(n)電壓下降的速度,藉由提升第一節點Q(n)第三階段的電壓,能夠提升電路的操作速度。 As mentioned above, with the transistor M1, the voltage level of the first node Q (n) in the third stage can be increased, so that the voltage difference between the gate and the source of the transistor M3 is increased, and the equivalent is reduced. The resistance value of the transistor M3 can increase the current flowing through the transistor M3. At this time, the transistor M4 pulls down the voltage level of the output terminal G (n) to the first reference voltage VGL. As the current becomes larger and the discharge speed becomes faster, the fall time of the scanning signal at the output terminal G (n) can be reduced ( fall time) for faster operations. That is, the voltage at the third stage of the first node Q (n) can correspond to the speed of the voltage drop at the output terminal G (n). By increasing the voltage at the third stage of the first node Q (n), the operation of the circuit can be improved. speed.
於時間點t7時,時脈信號HC3電壓上升,下拉控制單元103產生的下拉控制信號A(n)電壓隨之上升,啟動下拉單元104操作,可透過電晶體M5將第一節點Q(n)電壓往下拉。電晶體M2可提供穩壓作用,在移位暫存器SR(n)非操作時段,亦即第一節點Q(n)維持低電壓位準時,透過電晶體M2路徑對第二節點ST(n)放電,可使得第二節點ST(n)穩定維持在低電壓位準,清空電壓耦合單元105儲存的電荷。 At time point t7, the voltage of the clock signal HC3 rises, and the voltage of the pull-down control signal A (n) generated by the pull-down control unit 103 rises accordingly. The pull-down unit 104 is started to operate, and the first node Q (n) can be controlled by the transistor M5. The voltage is pulled down. Transistor M2 can provide voltage stabilization. During the non-operation period of the shift register SR (n), that is, when the first node Q (n) maintains a low voltage level, the second node ST (n ) Discharge, so that the second node ST (n) can be stably maintained at a low voltage level, and the charge stored in the voltage coupling unit 105 is cleared.
以下更說明移位暫存器SR(n)的多個實施例。第6圖繪示依照本發明第一實施例包含重置單元的第n級移位暫存器示意圖。相較於第2圖,第6圖所示實施例更包括重置單元106,重置單元106可依據重置信號RST調整下拉控制信號A(n)的電壓位 準,當進行重置時(例如重置信號RST為高電壓位準),可使得下拉控制信號A(n)為高電壓位準,如第4圖所示,電晶體M5、M2、M4分別下拉第一節點Q(n)、第二節點ST(n)、輸出端G(n)的電壓位準。其中重置單元106包含電晶體M9,電晶體M9的第一端耦接於電晶體M9的控制端,用以接收重置信號RST,電晶體M9的第二端耦接於下拉控制單元103的輸出端,以調整下拉控制信號A(n)的電壓位準。 Several embodiments of the shift register SR (n) are described below. FIG. 6 is a schematic diagram of an n-th stage shift register including a reset unit according to the first embodiment of the present invention. Compared to FIG. 2, the embodiment shown in FIG. 6 further includes a reset unit 106. The reset unit 106 can adjust the voltage level of the pull-down control signal A (n) according to the reset signal RST. When the reset is performed (for example, the reset signal RST is at a high voltage level), the pull-down control signal A (n) can be made at a high voltage level. As shown in FIG. 4, the transistors M5, M2, and M4 are respectively Pull down the voltage levels of the first node Q (n), the second node ST (n), and the output terminal G (n). The reset unit 106 includes a transistor M9. The first terminal of the transistor M9 is coupled to the control terminal of the transistor M9 to receive a reset signal RST. The second terminal of the transistor M9 is coupled to the pull-down control unit 103. Output terminal to adjust the voltage level of the pull-down control signal A (n).
第7圖繪示依照本發明第一實施例單向掃描的第n級移位暫存器電路圖,第7圖繪示如第6圖各個單元的一種範例電路實作方式,此範例中i=2,j=1,然而本發明並不僅限於此數值。 FIG. 7 shows a circuit diagram of the n-th stage shift register for unidirectional scanning according to the first embodiment of the present invention. FIG. 7 shows an exemplary circuit implementation of each unit as shown in FIG. 6. In this example, i = 2, j = 1, but the present invention is not limited to this value.
於本發明揭露之一實施例,移位暫存器SR(n)還可包括電晶體M8,電晶體M8的第一端耦接輸入單元101,電晶體M8的第二端耦接第一節點Q(n),電晶體M8的控制端耦接第二參考電壓VGH,例如為高參考電壓。由於電晶體M8的控制端是接到直流的第二參考電壓VGH,因此可視為一個維持導通的開關元件,電晶體M8的第一端及第二端可視為具有實質相等的電壓位準,故電晶體M8為可選擇性設置,在前述第2圖及第6圖實施例中即未包含電晶體M8。電晶體M8的作用在於使得輸入單元101所看到的移位暫存器SR(n)的電路負載(RC loading)不會太大。 In an embodiment disclosed by the present invention, the shift register SR (n) may further include a transistor M8, a first terminal of the transistor M8 is coupled to the input unit 101, and a second terminal of the transistor M8 is coupled to the first node. Q (n), the control terminal of the transistor M8 is coupled to the second reference voltage VGH, such as a high reference voltage. Since the control terminal of the transistor M8 is connected to the DC second reference voltage VGH, it can be regarded as a switching element that maintains conduction. The first and second terminals of the transistor M8 can be regarded as having substantially equal voltage levels, so The transistor M8 is optional, and the transistor M8 is not included in the embodiments of FIG. 2 and FIG. 6. The function of the transistor M8 is to make the circuit load (RC loading) of the shift register SR (n) seen by the input unit 101 not too great.
移位暫存器SR(n)還可包括電晶體M7,電晶體M7的第一端耦接輸入單元101,電晶體M7的第二端耦接輸出端G(n),電晶體M7的控制端耦接輸出端G(n)。由於電晶體即使在 關閉時仍可能存在漏電電流,為了避免第一節點Q(n)的電壓經由電晶體M8及電晶體M5組成的路徑漏電,因此設置耦接至輸出端G(n)的電晶體M7,可以達到防止漏電的效果。電晶體M7亦為可選擇性設置,在前述第2圖及第6圖實施例中即未包含電晶體M7。 The shift register SR (n) may further include a transistor M7, the first terminal of the transistor M7 is coupled to the input unit 101, the second terminal of the transistor M7 is coupled to the output terminal G (n), and the control of the transistor M7 The terminal is coupled to the output terminal G (n). Since the transistor is There may still be a leakage current when turned off. In order to prevent the voltage of the first node Q (n) from leaking through the path composed of transistor M8 and transistor M5, a transistor M7 coupled to the output terminal G (n) can be set to The effect of preventing electric leakage. Transistor M7 is also selectively arranged. In the foregoing embodiment of FIG. 2 and FIG. 6, the transistor M7 is not included.
輸入單元101包括電晶體M12,當第(n-2)級掃描信號為高電壓位準時電晶體M12導通,提升第一節點Q(n)的電壓位準。重置單元106包括電晶體M9,電晶體M9為二極體連接形式(diode-connected)的電晶體,當重置信號RST為高電壓位準時,提升下拉控制信號A(n)的電壓位準。 The input unit 101 includes a transistor M12. When the (n-2) th stage scanning signal is at a high voltage level, the transistor M12 is turned on to raise the voltage level of the first node Q (n). The reset unit 106 includes a transistor M9, which is a diode-connected transistor. When the reset signal RST is at a high voltage level, the voltage level of the pull-down control signal A (n) is raised. .
下拉控制單元103包括電晶體M10、電晶體M11、及電阻R1,電晶體M10的控制端耦接時脈信號HC3,電晶體M11的控制端耦接第一節點Q(n)。當移位暫存器SR(n)在操作階段時,即第一節點Q(n)為高電壓位準時,下拉控制信號A(n)為低電壓位準,藉由設置電阻R1可以確保下拉控制信號A(n)的電壓位準足夠低,電阻R1為可選擇性設置。當時脈信號HC3電壓上升時,電晶體M10導通,則可使得下拉控制信號A(n)的電壓上升,進而啟動下拉單元104對多個節點下拉電壓。 The pull-down control unit 103 includes a transistor M10, a transistor M11, and a resistor R1. The control terminal of the transistor M10 is coupled to the clock signal HC3, and the control terminal of the transistor M11 is coupled to the first node Q (n). When the shift register SR (n) is in the operation stage, that is, when the first node Q (n) is at a high voltage level, the pull-down control signal A (n) is at a low voltage level. The pull-down control can be ensured by setting the resistor R1 The voltage level of the control signal A (n) is sufficiently low, and the resistor R1 is selectively settable. When the voltage of the clock signal HC3 rises, the transistor M10 is turned on, so that the voltage of the pull-down control signal A (n) rises, and then the pull-down unit 104 starts the pull-down voltage of multiple nodes.
於本發明揭露之一實施例,上拉單元102內的電壓耦合單元105可以是以電晶體M6形成的等效電容,電晶體M6的控制端耦接第一節點Q(n),電晶體M6的第一端及第二端皆耦接第二節點ST(n),因此電晶體M6的作用相當於電容。 In an embodiment disclosed in the present invention, the voltage coupling unit 105 in the pull-up unit 102 may be an equivalent capacitor formed by a transistor M6. The control terminal of the transistor M6 is coupled to the first node Q (n) and the transistor M6. Both the first and second terminals are coupled to the second node ST (n), so the transistor M6 functions as a capacitor.
於本發明揭露之一實施例,下拉單元104除了如第4圖所示的電晶體M5、M2、M4,還包括電晶體M13。電晶體M13的控制端用以接收第(n+2)級掃描信號,電晶體M13的第一端耦接至輸出端G(n),電晶體M13的第二端耦接至第一參考電壓VGL。此處使用例子為i=2,i亦可以是其他正整數,則電晶體M12的控制端用以接收第(n-i)級掃描信號,電晶體M13的控制端用以接收第(n+i)級掃描信號。透過電晶體M13與電晶體M4耦接於第一參考電壓VGL與輸出端G(n)之間,可以增加對於輸出端G(n)的下拉強度,下拉單元104受控於下拉控制信號A(n)以及後級掃描信號G(n+i),電晶體M13為可選擇性設置。 In an embodiment disclosed by the present invention, the pull-down unit 104 includes a transistor M13 in addition to the transistors M5, M2, and M4 as shown in FIG. The control terminal of the transistor M13 is used to receive the (n + 2) th stage scanning signal. The first terminal of the transistor M13 is coupled to the output terminal G (n), and the second terminal of the transistor M13 is coupled to the first reference voltage. VGL. The example used here is i = 2, i can also be other positive integer, then the control terminal of transistor M12 is used to receive the (ni) th level scanning signal, and the control terminal of transistor M13 is used to receive the (n + i) th Level scan signal. The transistor M13 and the transistor M4 are coupled between the first reference voltage VGL and the output terminal G (n) to increase the pull-down strength of the output terminal G (n). The pull-down unit 104 is controlled by the pull-down control signal A ( n) and the subsequent scanning signal G (n + i), the transistor M13 is selectively settable.
於本發明揭露之一實施例,顯示面板的閘極驅動電路可支援雙向掃描功能,例如可從面板上方依序掃描至面板下方的順向掃描,亦可從面板下方依序掃描至面板上方的反向掃描。請參考第8圖,第8圖繪示依照本發明第一實施例雙向掃描的第n級移位暫存器電路圖。與第7圖所示的實施例的差異包括輸入單元101以及上拉單元102。 In an embodiment disclosed by the present invention, the gate driving circuit of the display panel can support a bidirectional scanning function, for example, it can sequentially scan from the top of the panel to the forward scanning below the panel, or it can sequentially scan from the bottom of the panel to the top of the panel. Scan in reverse. Please refer to FIG. 8. FIG. 8 is a circuit diagram of an n-th stage shift register for bidirectional scanning according to the first embodiment of the present invention. The difference from the embodiment shown in FIG. 7 includes an input unit 101 and a pull-up unit 102.
於第8圖所示的實施例中,輸入單元101包括電晶體M12與電晶體M14,電晶體M12的控制端接收第(n-2)級掃描信號,電晶體M14的控制端接收第(n+2)級掃描信號。此處使用例子為i=2,i亦可以是其他正整數,輸入單元101依據第(n-i)級掃描信號、第(n+i)級掃描信號、順向掃描控制信號U2D、及反向掃描控制信號D2U,調整第一節點Q(n)的電壓位準,其中順向掃描控 制信號U2D及反向掃描控制信號D2U可以是兩個相位互補的訊號,亦可以為兩個電壓位準相反的訊號,本發明不以此為限。 In the embodiment shown in FIG. 8, the input unit 101 includes a transistor M12 and a transistor M14. The control terminal of the transistor M12 receives the (n-2) th level of the scanning signal, and the control terminal of the transistor M14 receives the (n +2) level scan signal. The use example here is i = 2, i can also be other positive integers. The input unit 101 is based on the (ni) th scan signal, the (n + i) th scan signal, the forward scan control signal U2D, and the reverse scan. The control signal D2U adjusts the voltage level of the first node Q (n). The control signal U2D and the reverse scanning control signal D2U may be two signals with complementary phases, or two signals with opposite voltage levels, which is not limited in the present invention.
與第7圖相比,第8圖實施例所示上拉單元102'還包括電晶體M15,電晶體M15的控制端耦接第(n+j)級的第一節點(第8圖使用的例子為j=1),電晶體M15的第一端用以接收第一時脈信號HC1,電晶體M15的第二端耦接第二節點ST(n)。 Compared with FIG. 7, the pull-up unit 102 ′ shown in the embodiment of FIG. 8 further includes a transistor M15, and the control terminal of the transistor M15 is coupled to the first node of the (n + j) stage (the node used in FIG. The example is j = 1). The first terminal of the transistor M15 is used to receive the first clock signal HC1, and the second terminal of the transistor M15 is coupled to the second node ST (n).
當顯示面板執行順向掃描時(從上往下),順向掃描控制信號U2D為高電壓位準,反向掃描控制信號D2U為低電壓位準,時脈信號HC1可透過電晶體M1提高前級移位暫存器SR(n-1)的第一節點Q(n-1)於第三階段的電壓位準;當顯示面板執行反向掃描時(從下往上),順向掃描控制信號U2D為低電壓位準,反向掃描控制信號D2U為高電壓位準,時脈信號HC1可透過電晶體M15提高前級移位暫存器SR(n+1)的第一節點Q(n+1)於第三階段的電壓位準。 When the display panel performs forward scanning (from top to bottom), the forward scanning control signal U2D is at a high voltage level, and the reverse scanning control signal D2U is at a low voltage level. The clock signal HC1 can be increased through the transistor M1. The voltage level of the first node Q (n-1) of the stage shift register SR (n-1) in the third stage; when the display panel performs reverse scanning (from bottom to top), forward scanning control The signal U2D is at a low voltage level, and the reverse scanning control signal D2U is at a high voltage level. The clock signal HC1 can increase the first node Q (n) of the previous-stage shift register SR (n + 1) through the transistor M15. +1) the voltage level in the third stage.
第9圖繪示對應於第8圖電路於反向掃描操作時的信號時序圖。操作原理類似於第5圖所敘述,僅是改變為由下往上掃描。第一節點Q(n)的電壓位準提升同樣可區分為三個階段。第一階段:時間點t3到時間點t5,第一節點Q(n)電壓是由輸入單元101依據第(n+2)級移位暫存器輸出端G(n+2)提供的第(n+2)級掃描信號而提升。第二階段:時間點t5到時間點t6,於時間點t5時電壓上升的時脈信號HC1,會使得第一節點Q(n)的電壓更進一步上升。第三階段:時間點t6到時間點t7,時脈信號HC2於時間點t6 的電壓上升,經由第(n-1)級移位暫存器SR(n-1)內部的電晶體M15的耦合效應,可以提高第n級的第一節點Q(n)於第三階段的電壓。 FIG. 9 shows a signal timing diagram corresponding to the circuit in FIG. 8 during a reverse scanning operation. The operating principle is similar to that described in Figure 5, except that it is changed to scan from bottom to top. The voltage level increase of the first node Q (n) can also be divided into three stages. The first stage: from the time point t3 to the time point t5, the voltage of the first node Q (n) is the first ((+2)) stage shift register output terminal G (n + 2) provided by the input unit 101 ( n + 2) level scanning signals. The second stage: from time point t5 to time point t6, the clock signal HC1 whose voltage rises at time point t5 will cause the voltage of the first node Q (n) to rise further. The third stage: from time point t6 to time point t7, the clock signal HC2 is at time point t6 The voltage rise of the transistor n through the coupling effect of the transistor M15 in the (n-1) th stage shift register SR (n-1) can increase the first node Q (n) of the nth stage in the third stage. Voltage.
根據本發明實施例所提出的移位暫存電路,藉由於上拉單元與下拉單元設置適當的電晶體,可以使得移位暫存器內第一節點在第三階段的電壓位準提高,而能夠縮短移位暫存器輸出端掃描信號的下降緣的下降時間(falling time),提高電路操作速度,故能適用於多種高速應用,例如遊戲應用、高解析度、高畫面更新率的顯示面板。 According to the shift register circuit provided by the embodiment of the present invention, the voltage level of the first node in the shift register in the third stage can be increased by setting the appropriate transistor in the pull-up unit and the pull-down unit, and It can shorten the falling time of the falling edge of the scan signal at the output of the shift register and improve the circuit operation speed, so it can be applied to a variety of high-speed applications, such as game applications, high-resolution, and high-screen-update display panels. .
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.
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| TWI709123B (en) * | 2019-06-10 | 2020-11-01 | 友達光電股份有限公司 | Driving signal generator |
| TWI721935B (en) * | 2019-06-10 | 2021-03-11 | 友達光電股份有限公司 | Driving signal generator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN210692046U (en) * | 2020-01-02 | 2020-06-05 | 京东方科技集团股份有限公司 | Shift register, gate drive circuit and display device |
| CN111667793B (en) * | 2020-05-28 | 2021-08-06 | 昆山国显光电有限公司 | Shift register and display panel |
| WO2022047672A1 (en) | 2020-09-02 | 2022-03-10 | 京东方科技集团股份有限公司 | Drive method, drive circuit, and display device |
| TWI778864B (en) * | 2021-11-12 | 2022-09-21 | 友達光電股份有限公司 | Gate driving circuit and display panel |
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| TWI709123B (en) * | 2019-06-10 | 2020-11-01 | 友達光電股份有限公司 | Driving signal generator |
| TWI721935B (en) * | 2019-06-10 | 2021-03-11 | 友達光電股份有限公司 | Driving signal generator |
Also Published As
| Publication number | Publication date |
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| CN108399884B (en) | 2021-07-13 |
| CN108399884A (en) | 2018-08-14 |
| TW201931341A (en) | 2019-08-01 |
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