TWI632595B - Imprint device, imprint method, and article manufacturing method - Google Patents
Imprint device, imprint method, and article manufacturing method Download PDFInfo
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- TWI632595B TWI632595B TW106104125A TW106104125A TWI632595B TW I632595 B TWI632595 B TW I632595B TW 106104125 A TW106104125 A TW 106104125A TW 106104125 A TW106104125 A TW 106104125A TW I632595 B TWI632595 B TW I632595B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
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- H10P76/2041—
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Abstract
壓印裝置,係使模具接觸於基板上的壓印材而使該壓印材固化從而在該基板上形成圖案。壓印裝置,係具備:保持基板的基板夾具、配置於前述基板夾具的周邊的基板周邊構材、保持模具的模具夾具、配置於前述模具夾具的周邊的模具周邊構材、和對前述基板周邊構材與前述模具周邊構材之間供應包含交流成分的電壓的電源。 The embossing device is a method in which a mold is brought into contact with an imprint material on a substrate to cure the imprint material to form a pattern on the substrate. The imprint apparatus includes a substrate holder for holding a substrate, a substrate peripheral member disposed around the substrate holder, a mold holder for holding a mold, a mold peripheral member disposed near the mold holder, and a periphery of the substrate. A power source including a voltage of an AC component is supplied between the structural member and the mold peripheral member.
Description
本發明,係有關壓印裝置、壓印方法及物品製造方法。 The present invention relates to an imprint apparatus, an imprint method, and an article manufacturing method.
在使模具(mold)接觸於配置在基板上的壓印材的狀態下使壓印材固化從而在基板上形成圖案的壓印技術受到注目。於模具,係形成由凹部所成的圖案,使模具接觸於基板上的壓印材時,壓印材會由於毛細管現象而填充於凹部。在對於凹部充分填充壓印材的時間點,對於壓印材賦予光或熱等的能量。據此壓印材固化,形成於模具的由凹部所成的圖案被轉印於基板上的壓印材。在壓印材固化後模具被從壓印材分離。 The imprint technique which solidifies an imprint material in the state which contacted the mold to the imprint material arrange | positioned on the board | substrate, and forms a pattern on a board | substrate attracts attention. In the mold, a pattern formed by the concave portion is formed, and when the mold contacts the imprint material on the substrate, the imprint material fills the concave portion due to capillary phenomenon. At the time when the embossed material is sufficiently filled in the recess, energy such as light or heat is applied to the embossed material. As a result, the imprint material is cured, and the pattern formed by the concave portion formed in the mold is transferred to the imprint material on the substrate. After the imprint material is cured, the mold is separated from the imprint material.
從基板上的已固化的壓印材使模具分離時模具會帶電。由於此帶電而形成的電場使得靜電力(庫侖力)作用於顆粒,據此顆粒被吸引至模具而附著於模具。顆粒,係有時從壓印裝置的腔室的外部侵入,有時亦因為於腔室之中機械要素的相互的摩擦、機械要素與基板或模具的摩擦等而產生。或者,有時為了在基板上配置未固化 的壓印材而從吐出口吐出壓印材時產生壓印材的霧氣,此壓印材固化因而產生顆粒。於專利文獻1,係記載:在模具設置異物捕捉區域,使該異物捕捉區域帶電,從而在往轉印位置的基板的搬送時,將存在於環境氣體中及/或基板上的異物除去。 The mold is charged when the mold is separated from the cured imprint material on the substrate. The electric field formed by this charging causes electrostatic force (Coulomb force) to act on the particles, whereby the particles are attracted to the mold and adhere to the mold. The particles sometimes invade from the outside of the chamber of the imprint apparatus, and sometimes also occur due to the friction between the mechanical elements in the chamber, the friction between the mechanical elements and the substrate or the mold, and the like. Or, in order to arrange uncured on the substrate When the embossed material is ejected from the discharge port, the embossed material is fogged, and the embossed material is solidified to generate particles. In Patent Document 1, it is described that a foreign object capturing area is provided in a mold and the foreign object capturing area is charged to remove foreign objects existing in the ambient gas and / or the substrate when the substrate is transferred to the transfer position.
顆粒附著於模具或基板的狀態下,使模具接觸於基板上的壓印材而進行圖案的形成時,形成具有缺陷的圖案,或基板及/或模具可能破損。於此,強固地附著在配置於基板的周邊的構材的表面的顆粒,係由於作用於模具之間的靜電力而不易從該表面脫離,惟薄弱地附著於該表面的顆粒,係由於靜電力而容易從該表面脫離。脫離的顆粒,係可能附著於模具或基板。此外,強固地附著在配置於模具的周邊的構材的表面的顆粒,係由於作用於與基板上的壓印材之間的靜電力而不易從該表面脫離。另一方面,薄弱地附著於該表面的顆粒,係由於靜電力而容易從該表面脫離。脫離的顆粒,係可能附著於基板或模具。 When particles are attached to a mold or a substrate and a pattern is formed by contacting the mold with an imprint material on the substrate, a defective pattern is formed, or the substrate and / or the mold may be damaged. Here, the particles strongly adhered to the surface of the structural material arranged on the periphery of the substrate are not easily separated from the surface due to the electrostatic force acting between the molds, but the particles weakly adhered to the surface are due to static electricity. Force and easily detach from the surface. The detached particles may be attached to the mold or the substrate. In addition, the particles strongly adhered to the surface of the structural member disposed on the periphery of the mold are not easily separated from the surface due to the electrostatic force acting on the imprint material on the substrate. On the other hand, particles that are weakly adhered to the surface are easily detached from the surface due to electrostatic force. The detached particles may be attached to the substrate or the mold.
[專利文獻1]日本專利特開2014-175340號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2014-175340
本發明,係以上述的課題認識為契機而創作者,目的在於提供一種在以下目的方面有利的技術:減低 由於容易從基板及/或基板的周邊的構材脫離的顆粒而發生的圖案缺陷、基板及/或模具的破損。 The present invention was created by taking the above-mentioned subject recognition as an opportunity, and an object of the present invention is to provide a technique that is advantageous in terms of: Pattern defects due to particles that are likely to be detached from the substrate and / or a structure around the substrate, and damage to the substrate and / or mold.
本發明的1個形態,係有關使模具接觸於基板上的壓印材而使該壓印材固化從而在該基板上形成圖案的壓印裝置,前述壓印裝置係具備:保持基板的基板夾具、配置於前述基板夾具的周邊的基板周邊構材、保持模具的模具夾具、配置於前述模具夾具的周邊的模具周邊構材、和對前述基板周邊構材與前述模具周邊構材之間供應包含交流成分的電壓的電源。 One aspect of the present invention relates to an imprinting apparatus that contacts a mold with an imprinting material on a substrate and cures the imprinting material to form a pattern on the substrate. The imprinting device includes: a substrate holder that holds the substrate; A substrate peripheral structure around the substrate holder, a mold holder holding a mold, a mold peripheral structure arranged around the mold holder, and an AC-containing component is supplied between the substrate peripheral member and the mold peripheral member. Voltage power supply.
依本發明時,提供一種在以下目的方面有利的技術:減低由於容易從基板及/或基板的周邊的構材脫離的顆粒而發生的圖案缺陷、基板及/或模具的破損。 According to the present invention, there is provided a technique which is advantageous in terms of reducing a pattern defect and breakage of a substrate and / or a mold due to particles that are easily detached from a substrate and / or a structure around the substrate.
IMP‧‧‧壓印裝置 IMP‧‧‧ Imprint Device
100‧‧‧模具 100‧‧‧mould
101‧‧‧基板 101‧‧‧ substrate
102‧‧‧基板夾具 102‧‧‧Substrate fixture
113‧‧‧基板周邊構材 113‧‧‧ Substrate peripheral structure
150‧‧‧顆粒 150‧‧‧ particles
161‧‧‧模具周邊構材 161‧‧‧mould surrounding structure
PS‧‧‧電源 PS‧‧‧ Power
[圖1]示意性針對本發明的1個實施形態的壓印裝置的一部分的構成進行繪示的圖。 1 is a diagram schematically illustrating a configuration of a part of an imprint apparatus according to an embodiment of the present invention.
[圖2]示意性針對本發明的1個實施形態的壓印裝置的構成進行繪示的圖。 FIG. 2 is a diagram schematically illustrating a configuration of an imprint apparatus according to an embodiment of the present invention.
[圖3]示出變化例的圖。 [Fig. 3] A diagram showing a modification.
[圖4A]例示透過電源而供應至基板周邊構材與模具周邊構材之間的電壓的圖。 4A is a diagram illustrating a voltage supplied between a substrate peripheral member and a mold peripheral member by a power source.
[圖4B]例示透過電源而供應至基板周邊構材與模具周邊構材之間的電壓的圖。 4B is a diagram illustrating a voltage supplied between a substrate peripheral member and a mold peripheral member by a power source.
[圖5A]例示透過電源而供應至基板周邊構材與模具周邊構材之間的電壓的圖。 5A is a diagram illustrating a voltage supplied between a substrate peripheral member and a mold peripheral member by a power source.
[圖5B]例示透過電源而供應至基板周邊構材與模具周邊構材之間的電壓的圖。 5B is a diagram illustrating a voltage supplied between a substrate peripheral member and a mold peripheral member by a power source.
[圖6]例示本發明的1個實施形態的壓印裝置的動作方法的圖。 6 is a diagram illustrating an operation method of an imprint apparatus according to an embodiment of the present invention.
[圖7]例示本發明的1個實施形態的壓印裝置的動作方法或運用方法的圖。 7 is a diagram illustrating an operation method or an operation method of an imprint apparatus according to an embodiment of the present invention.
[圖8A]說明實驗方法的圖。 [Fig. 8A] A diagram illustrating an experimental method.
[圖8B]說明實驗條件A的圖。 [Fig. 8B] A diagram illustrating experimental condition A. [Fig.
[圖8C]說明實驗條件B的圖。 FIG. 8C is a diagram illustrating experimental condition B. FIG.
[圖9]針對為了實驗條件A而準備的樣品進行說明的圖。 FIG. 9 is a diagram illustrating a sample prepared for experimental condition A. FIG.
[圖10A]針對在實驗條件A下的結果進行繪示的圖。 FIG. 10A is a graph plotting results under experimental condition A. FIG.
[圖10B]針對在實驗條件A下的結果進行繪示的圖。 FIG. 10B is a graph plotting results under experimental condition A. FIG.
[圖10C]針對在實驗條件A下的結果進行繪示的圖。 FIG. 10C is a graph showing results under experimental condition A. FIG.
[圖11]針對為了實驗條件B而準備的樣品進行說明的圖。 FIG. 11 is a diagram illustrating a sample prepared for experimental condition B. FIG.
[圖12A]針對在實驗條件B下的結果進行繪示的圖。 FIG. 12A is a graph plotting results under experimental condition B. FIG.
[圖12B]針對在實驗條件B下的結果進行繪示的 圖。 [Fig. 12B] The results plotted under the experimental conditions B Illustration.
[圖12C]針對在實驗條件B下的結果進行繪示的圖。 FIG. 12C is a graph plotting results under experimental condition B. FIG.
[圖13]針對模具周邊構材的構成例進行繪示的圖。 FIG. 13 is a diagram illustrating a configuration example of a mold peripheral member.
[圖14]針對作為模具周邊構材的其他構成例的被分割的模具周邊構材進行繪示的圖。 14 is a diagram illustrating a divided mold peripheral material as another example of the configuration of the mold peripheral material.
[圖15]針對被分割的模具周邊構材的利用例進行說明的圖。 15 is a diagram illustrating an example of use of a divided mold peripheral structure.
[圖16]針對被分割的模具周邊構材的利用例進行說明的圖。 FIG. 16 is a diagram illustrating an example of use of a divided mold peripheral structure.
[圖17]針對被分割的模具周邊構材的利用例進行說明的圖。 FIG. 17 is a diagram illustrating an example of use of a divided mold peripheral member.
以下,一面參照附圖一面針對本發明的壓印裝置及其動作方法通過其例示的實施形態進行說明。 Hereinafter, an imprint apparatus and an operation method thereof according to the present invention will be described with reference to the accompanying drawings with reference to the illustrated embodiments.
於圖2,係例示本發明的1個實施形態的壓印裝置IMP的構成。壓印裝置IMP,係將模具100的圖案透過壓印而轉印於基板101。換言之,壓印裝置IMP,係將模具100的圖案透過壓印而轉印於基板101上的壓印材(被轉印材)。在此說明書中,壓印係表示:使壓印材與模具接觸,使該壓印材固化,之後將該壓印材與模具分離。模具100,係具有以凹部而構成的圖案。使模具100接觸於基板101上的壓印材(未固化狀態的樹脂)使得壓 印材被填充於圖案的凹部。在此狀態下,對於壓印材賦予使其固化的能量,使得壓印材固化。據此模具100的圖案被轉印於壓印材,由固化的壓印材所成的圖案被形成於基板101上。 FIG. 2 illustrates a configuration of an imprint apparatus IMP according to an embodiment of the present invention. The imprint apparatus IMP transfers the pattern of the mold 100 to the substrate 101 through imprinting. In other words, the imprinting device IMP is an imprinting material (a material to be transferred) that transfers the pattern of the mold 100 onto the substrate 101 by imprinting. In this specification, embossing means that the embossing material is brought into contact with the mold, the embossing material is cured, and then the embossing material is separated from the mold. The mold 100 has a pattern formed by a recess. The mold 100 is brought into contact with an imprint material (resin in an uncured state) on the substrate 101 so that The printed material is filled in the concave portion of the pattern. In this state, energy is given to the imprint material for curing, so that the imprint material is cured. Accordingly, the pattern of the mold 100 is transferred to the imprint material, and the pattern formed by the cured imprint material is formed on the substrate 101.
壓印材,係被賦予使其固化的能量因而固化的固化性組成物。壓印材,係有時表示固化的狀態,有時亦表示未固化的狀態。固化用的能量方面,係使用例如電磁波、熱等。電磁波,係例如從10nm以上、1mm以下的範圍選擇其波長的光(例如,紅外線、可見光線、紫外線)。 The embossing material is a curable composition that is cured by being given energy to cure it. The embossed material sometimes indicates a cured state and sometimes indicates an uncured state. For the energy for curing, for example, electromagnetic waves and heat are used. The electromagnetic wave is, for example, light having a wavelength selected from a range of 10 nm to 1 mm (for example, infrared rays, visible rays, and ultraviolet rays).
固化性組成物,於一般情況下,係由於光的照射,或者由於加熱而固化的組成物。此等之中由於光而固化的光固化性組成物,係至少可含有聚合性化合物及光聚合引發劑。此外,光固化性組成物,係可附加地含有非聚合性化合物或溶劑。非聚合性化合物,係例如可為由增感劑、供氫體、內添型脫模劑、界面活性劑、抗氧化劑、聚合物成分等的群組中所選擇的至少一種。 The curable composition is generally a composition that is cured by light irradiation or heating. Among these, the photocurable composition cured by light may contain at least a polymerizable compound and a photopolymerization initiator. The photocurable composition may additionally contain a non-polymerizable compound or a solvent. The non-polymerizable compound may be, for example, at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, and a polymer component.
本說明書及附圖,係於使平行於基板101的表面的方向為XY平面的XYZ座標系中表示方向。使平行於XYZ座標系的X軸、Y軸、Z軸的方向分別為X方向、Y方向、Z方向,使繞X軸的旋轉、繞Y軸的旋轉、繞Z軸的旋轉分別為θ X、θ Y、θ Z。關於X軸、Y軸、Z軸的控制或驅動,係分別表示關於平行於X軸的方向、平行於Y軸的方向、平行於Z軸的方向的控制或驅動。 此外,關於θ X軸、θ Y軸、θ Z軸的控制或驅動,係分別表示關於繞平行於X軸的軸的旋轉、繞平行於Y軸的軸的旋轉、繞平行於Z軸的軸的旋轉的控制或驅動。此外,位置,係可基於X軸、Y軸、Z軸的座標而確定的資訊,姿勢係能以相對於θ X軸、θ Y軸、θ Z軸的相對的旋轉而確定的資訊。定位,係表示控制位置及/或姿勢。另外,在本說明書中,如「A及/或B」的表現,係表示「A及B中至少一者」。 The present specification and drawings refer to directions in an XYZ coordinate system in which a direction parallel to the surface of the substrate 101 is an XY plane. Let X, Y, and Z directions parallel to the XYZ coordinate system be X, Y, and Z directions, respectively, and make rotations about the X axis, rotations about the Y axis, and rotations about the Z axis θ X , Θ Y, θ Z. The control or drive of the X-axis, Y-axis, and Z-axis means control or drive of a direction parallel to the X-axis, a direction parallel to the Y-axis, and a direction parallel to the Z-axis, respectively. In addition, the control or drive of the θ X axis, θ Y axis, and θ Z axis refers to rotation about an axis parallel to the X axis, rotation about an axis parallel to the Y axis, and about an axis parallel to the Z axis, respectively. Control or drive of the rotation. The position is information that can be determined based on the coordinates of the X-axis, Y-axis, and Z-axis, and the posture can be determined by relative rotation with respect to the θ X-axis, θ Y-axis, and θ Z-axis. Positioning means controlling the position and / or posture. In addition, the expression "A and / or B" in this specification means "at least one of A and B".
壓印裝置IMP,係具備定位基板101的基板驅動機構SDM,基板驅動機構SDM,係例如可包含基板夾具102、基板周邊構材113、微動機構114、粗動機構115及基底構造體116。基板夾具102,係具有保持基板101的基板保持區域,透過吸附(例如,真空吸附、靜電吸附)或機械手段而保持基板101。微動機構114,係可包含支撐基板夾具102及基板周邊構材113的微動台及驅動該微動台的驅動機構。基板周邊構材113,係配置於基板夾具102的周邊。基板周邊構材113,係如示於圖1,被以包圍基板101之側面的方式配置於配置基板101的區域的周邊。基板周邊構材113,係可具有與基板101上表面大致相等的高度之上表面。例如,基板周邊構材113,係可具有與基板101上表面相等、或比基板101上表面稍低的上表面(例如,與基板101上表面的高低差為1mm以下的上表面)。另外,基板周邊構材113亦可非一體,而被分割而構成。 The imprint apparatus IMP is a substrate driving mechanism SDM including a positioning substrate 101, and the substrate driving mechanism SDM may include, for example, a substrate holder 102, a substrate peripheral structure 113, a micro-motion mechanism 114, a coarse-motion mechanism 115, and a base structure 116. The substrate holder 102 has a substrate holding area for holding the substrate 101 and holds the substrate 101 by adsorption (for example, vacuum adsorption, electrostatic adsorption) or mechanical means. The micro-movement mechanism 114 may include a micro-motion stage that supports the substrate holder 102 and the substrate peripheral structure 113 and a driving mechanism that drives the micro-motion stage. The substrate peripheral member 113 is disposed around the substrate holder 102. The substrate peripheral member 113 is, as shown in FIG. 1, disposed around the area where the substrate 101 is disposed so as to surround the side surface of the substrate 101. The substrate peripheral structure 113 may have an upper surface having a height substantially equal to the upper surface of the substrate 101. For example, the substrate peripheral member 113 may have an upper surface that is equal to the upper surface of the substrate 101 or slightly lower than the upper surface of the substrate 101 (for example, an upper surface that is 1 mm or less in height from the upper surface of the substrate 101). In addition, the substrate peripheral member 113 may be formed as a single body instead of being integrated.
微動機構114,係微驅動基板夾具102從而微驅動基板101的機構。粗動機構115,係粗驅動微動機構114從而粗驅動基板101的機構。基底構造體116,係支撐粗動機構115、微動機構114、基板夾具102及基板周邊構材113。基板驅動機構SDM,係例如得以就複數個軸(例如,X軸、Y軸、θ Z軸的3軸)驅動基板101的方式而構成。微動機構114的被與基板夾具102一體化的部分(微動台)的位置,係透過干涉計等的計測器117從而監控。 The micro-movement mechanism 114 is a mechanism for micro-driving the substrate holder 102 and micro-driving the substrate 101. The coarse movement mechanism 115 is a mechanism for coarsely driving the fine movement mechanism 114 to coarsely drive the substrate 101. The base structure 116 supports the coarse movement mechanism 115, the fine movement mechanism 114, the substrate holder 102, and the substrate peripheral structure 113. The substrate driving mechanism SDM is configured, for example, so as to drive the substrate 101 with respect to a plurality of axes (for example, three axes of an X axis, a Y axis, and a θ Z axis). The position of the micro-movement mechanism 114 that is integrated with the substrate holder 102 (micro-motion stage) is monitored by a measuring device 117 such as an interferometer.
壓印裝置IMP係具備將模具100定位的模具驅動機構MDM,模具驅動機構MDM係可包含模具夾具110、驅動機構109及模具周邊構材161。模具周邊構材161,係以包圍模具100之側面的方式,被配置於配置模具100的區域的周邊。模具驅動機構MDM及模具周邊構材161,係可被透過支撐構造體108而支撐。模具夾具110,係可透過吸附(例如,真空吸附、靜電吸附)或機械手段而保持模具100。驅動機構109,係透過驅動模具夾具110從而驅動模具100。底版驅動機構MDM,係例如可被構成為就複數個軸(例如,X軸、Y軸、Z軸、θ X軸、θ Y軸、θ Z軸的6軸)驅動模具100。 The imprint apparatus IMP is provided with a mold driving mechanism MDM for positioning the mold 100. The mold driving mechanism MDM may include a mold clamp 110, a driving mechanism 109, and a mold peripheral member 161. The mold peripheral member 161 is disposed around the area where the mold 100 is disposed so as to surround the side surface of the mold 100. The mold driving mechanism MDM and the mold peripheral structure 161 can be supported by the support structure 108. The mold jig 110 can hold the mold 100 by adsorption (for example, vacuum adsorption, electrostatic adsorption) or mechanical means. The driving mechanism 109 drives the mold 100 by driving the mold holder 110. The master plate driving mechanism MDM may be configured to drive the mold 100 with respect to a plurality of axes (for example, 6 axes of X axis, Y axis, Z axis, θ X axis, θ Y axis, and θ Z axis).
基板驅動機構SDM及模具驅動機構MDM,係構成進行基板101與模具100的相對的定位的驅動部。驅動部,係就X軸、Y軸、θ X軸、θ Y軸及θ Z軸調整基板101與模具100的相對位置以外,亦就Z軸調整基板 101與模具100的相對位置。就Z軸的基板101與模具100的相對位置的調整,係包含基板101上的壓印材與模具100的接觸及分離的動作。 The substrate driving mechanism SDM and the mold driving mechanism MDM constitute a driving unit that performs relative positioning of the substrate 101 and the mold 100. The drive unit adjusts the relative position of the substrate 101 and the mold 100 in addition to the X-axis, Y-axis, θ X-axis, θ Y-axis, and θ Z-axis, and adjusts the substrate with respect to the Z-axis. The relative position of 101 and the mold 100. The adjustment of the relative position of the substrate 101 and the mold 100 in the Z axis includes the operation of contacting and separating the imprint material on the substrate 101 and the mold 100.
壓印裝置IMP,係可具備對基板101上塗佈、配置或供應未固化的壓印材的分配器(供應部)111。分配器111,係例如可被構成為將壓印材以複數個液滴的形態配置於基板101上。分配器111,係可被透過支撐構造體108而支撐。 The imprint apparatus IMP may include a dispenser (supply section) 111 for coating, arranging, or supplying an uncured imprint material on the substrate 101. The dispenser 111 may be configured, for example, to arrange the imprint material on the substrate 101 in the form of a plurality of droplets. The distributor 111 is supported by a support structure 108.
壓印裝置IMP,係可具備對基板101上的壓印材照射UV光等的光從而使該壓印材固化的固化部104。壓印裝置IMP係另外可具備供於觀察壓印的情況用的相機103。從固化部104所射出的光,係可被鏡105反射,透過模具100而照射於壓印材。相機103,係可被構成為經由模具100及鏡105而觀察壓印的情況,例如觀察壓印材與模具100的接觸狀態等。 The imprint apparatus IMP may include a curing unit 104 that irradiates the imprint material on the substrate 101 with light such as UV light to cure the imprint material. The imprint apparatus IMP may further include a camera 103 for observing the state of imprint. The light emitted from the curing section 104 can be reflected by the mirror 105 and transmitted through the mold 100 to irradiate the imprint material. The camera 103 may be configured to observe the embossing situation through the mold 100 and the mirror 105, for example, to observe a contact state between the embossing material and the mold 100.
壓印裝置IMP,係可具備供於對基板101的標示與模具100的標示的相對位置進行檢測用的對準範圍顯示器107a、107b。對準範圍顯示器107a、107b,係可被配置於被透過支撐構造體108而支撐的上部構造體106。壓印裝置IMP,係可具備供於對基板101的複數個標示的位置進行檢測用的離軸檢測器112。離軸檢測器112,係可被透過支撐構造體108而支撐。 The imprint apparatus IMP may include alignment range displays 107 a and 107 b for detecting a relative position of the mark of the substrate 101 and the mark of the mold 100. The alignment range displays 107 a and 107 b are arranged on the upper structure 106 supported by the support structure 108. The imprint apparatus IMP may include an off-axis detector 112 for detecting a plurality of marked positions on the substrate 101. The off-axis detector 112 is supported by the support structure 108.
壓印裝置IMP,係可具備1或複數個氣體供應部118。氣體供應部118,係可被以包圍模具夾具110 的方式配置於模具夾具110的周圍。氣體供應部118,係對基板101與模具100之間的空間供應氣體從而形成簾狀的氣流118a。氣體供應部118,係透過氣流118a從而抑制顆粒侵入於基板101與模具100之間的空間。氣體供應部118,係例如可被透過支撐構造體108而支撐。氣體供應部118供應的氣體,係可為例如清潔乾燥空氣,惟亦可為氮或氦等的其他氣體。來自氣體供應部118的氣體的吹出口(未圖示)係優選上為環狀,惟只要所形成的氣流118a將基板101與模具100之間的空間包圍,則吹出口本身可不為環狀。壓印裝置IMP,係可具備氣體供應部130,以在基板101與模具100之間的空間形成沿著基板101的氣體131的流動的方式,朝向該空間供應氣體131。 The imprint apparatus IMP may include one or a plurality of gas supply units 118. The gas supply part 118 may be used to surround the mold holder 110 The method is arranged around the mold holder 110. The gas supply unit 118 supplies gas to the space between the substrate 101 and the mold 100 to form a curtain-shaped air flow 118a. The gas supply part 118 passes the air flow 118 a to prevent particles from entering the space between the substrate 101 and the mold 100. The gas supply part 118 is supported by the support structure 108, for example. The gas supplied from the gas supply unit 118 may be, for example, clean and dry air, but may be other gas such as nitrogen or helium. The gas outlet (not shown) of the gas from the gas supply part 118 is preferably circular. However, as long as the formed airflow 118a surrounds the space between the substrate 101 and the mold 100, the air outlet itself may not be circular. The imprint apparatus IMP may include a gas supply unit 130 to supply a gas 131 toward a space between the substrate 101 and the mold 100 so as to form a flow of the gas 131 along the substrate 101.
壓印裝置IMP,係具備對基板周邊構材113與模具周邊構材161之間供應包含交流成分的電壓V的電源PS。在示於圖2之例,係基板周邊構材113被接地,對於模具周邊構材161從電源PS供應包含交流成分的電壓V。電壓V,係可為負的電壓或正的電壓。對基板周邊構材113與模具周邊構材161之間透過電源PS供應包含交流成分的電壓V使得在基板周邊構材113與模具周邊構材161之間形成電場。此電場使靜電力作用於基板周邊構材113之上的顆粒使得基板周邊構材113之上的顆粒的至少一部分被除去。 The imprint apparatus IMP includes a power supply PS that supplies a voltage V including an AC component between the substrate peripheral member 113 and the mold peripheral member 161. In the example shown in FIG. 2, the system substrate peripheral member 113 is grounded, and the mold peripheral member 161 is supplied with a voltage V including an AC component from a power source PS. The voltage V can be a negative voltage or a positive voltage. A voltage V containing an AC component is supplied between the substrate peripheral member 113 and the mold peripheral member 161 through a power supply PS so that an electric field is formed between the substrate peripheral member 113 and the mold peripheral member 161. This electric field causes an electrostatic force to act on the particles on the substrate peripheral structure 113 so that at least a part of the particles on the substrate peripheral structure 113 is removed.
壓印裝置IMP,係具備腔室190,上述的各構 成要素係可被配置於腔室190之中。壓印裝置IMP,係另外可具備主控制部(控制部)126、壓印控制部120、照射控制部121、顯示器控制部122、分配器控制部123、簾控制部124、基板控制部125。主控制部126,係控制壓印控制部120、照射控制部121、顯示器控制部122、分配器控制部123、簾控制部124、基板控制部125及電源PS。壓印控制部120,係控制模具驅動機構MDM。照射控制部121,係控制固化部104。顯示器控制部122,係控制對準範圍顯示器107a、107b及離軸檢測器112。分配器控制部123,係控制分配器111。簾控制部124,係控制氣體供應部118。基板控制部125,係控制基板驅動機構SDM。 The imprint apparatus IMP is provided with a chamber 190, and the above-mentioned structures The component system may be arranged in the chamber 190. The imprint apparatus IMP may further include a main control section (control section) 126, an imprint control section 120, an irradiation control section 121, a display control section 122, a dispenser control section 123, a curtain control section 124, and a substrate control section 125. The main control unit 126 controls the imprint control unit 120, the irradiation control unit 121, the display control unit 122, the dispenser control unit 123, the curtain control unit 124, the substrate control unit 125, and the power supply PS. The imprint control unit 120 controls the mold driving mechanism MDM. The irradiation control unit 121 controls the curing unit 104. The display control unit 122 controls the alignment range displays 107 a and 107 b and the off-axis detector 112. The distributor control unit 123 controls the distributor 111. The curtain control unit 124 controls the gas supply unit 118. The substrate control unit 125 controls the substrate driving mechanism SDM.
於圖1,係示意性示出圖2的壓印裝置IMP的一部分。基板周邊構材113,係可具有與基板101上表面相等的高度之上表面。模具周邊構材161,係可具有與模具100的下表面相等的高度的下表面。基板周邊構材113及模具周邊構材161,係可作用為抑制被從氣體供應部130供應的氣體131的流動的擾動。基板周邊構材113,係可具有平坦的上表面。模具周邊構材161,係可具有平坦的下表面。 FIG. 1 schematically illustrates a part of the imprint apparatus IMP of FIG. 2. The substrate peripheral structure 113 may have an upper surface having the same height as the upper surface of the substrate 101. The mold peripheral member 161 may have a lower surface having the same height as the lower surface of the mold 100. The substrate peripheral member 113 and the mold peripheral member 161 function to suppress disturbance of the flow of the gas 131 supplied from the gas supply unit 130. The substrate peripheral structure 113 may have a flat upper surface. The mold peripheral member 161 may have a flat lower surface.
於腔室190的內部空間,係顆粒150可能侵入。此外,在腔室190之中,係機械要素的相互的摩擦、機械要素與基板101或模具100的摩擦等使得可能產生顆粒150。或者,分配器111為了在基板101上配置未固化 的壓印材而從吐出口吐出壓印材時產生壓印材的霧氣,此壓印材固化使得可能產生顆粒150。 In the internal space of the chamber 190, the particles 150 may penetrate. In addition, in the chamber 190, the mutual friction of the mechanical elements, the friction of the mechanical elements with the substrate 101 or the mold 100, and the like make it possible to generate particles 150. Alternatively, the dispenser 111 is arranged to be uncured on the substrate 101 When the embossing material is discharged from the discharge port, the embossing material is misted, and the embossing material is solidified so that particles 150 may be generated.
顆粒150,係可能附著於基板周邊構材113及模具周邊構材161等的構材的表面。基板周邊構材113及模具周邊構材161之中,尤其對於位於下方的基板周邊構材113,顆粒150落下並附著的可能性高。顆粒150,係由於粒徑、形狀、材質等而存在各種。因此,對於基板周邊構材113之上表面的顆粒150的附著力亦有各種。對於基板周邊構材113之上表面的附著力弱的顆粒150,係容易由於外部刺激(振動、氣流、靜電)等而從基板周邊構材113之上表面脫離。模具100,係通過壓印而帶電,故在基板周邊構材113與模具100之間可能形成強的電場。由於此電場,使得靜電力作用於基板周邊構材113之上的顆粒150。因此,以弱附著力附著於基板周邊構材113之上表面的顆粒150,係可能容易從基板周邊構材113之上表面脫離。從基板周邊構材113之上表面所脫離的顆粒150,係可能被吸引至模具100而附著於模具100,或附著於基板101。因此,顆粒150有時可能被夾入模具100與基板101之間。為此,可能形成具有缺陷的圖案,或基板及/或模具可能破損。 The particles 150 may be attached to the surface of a substrate, such as a substrate peripheral member 113 and a mold peripheral member 161. Among the substrate peripheral member 113 and the mold peripheral member 161, especially for the substrate peripheral member 113 located below, the particles 150 are highly likely to fall and adhere. The particles 150 have various types depending on the particle size, shape, and material. Therefore, there are various adhesion forces to the particles 150 on the upper surface of the substrate peripheral structure 113. The particles 150 having weak adhesion on the upper surface of the substrate peripheral structure 113 are easily detached from the upper surface of the substrate peripheral structure 113 due to external stimuli (vibration, air flow, static electricity) and the like. Since the mold 100 is charged by embossing, a strong electric field may be formed between the substrate peripheral member 113 and the mold 100. Due to this electric field, an electrostatic force acts on the particles 150 on the substrate peripheral structure 113. Therefore, the particles 150 attached to the upper surface of the substrate peripheral structure 113 with a weak adhesion force may be easily separated from the upper surface of the substrate peripheral structure 113. The particles 150 detached from the upper surface of the substrate peripheral structure 113 may be attracted to the mold 100 and attached to the mold 100 or to the substrate 101. Therefore, the particles 150 may be sandwiched between the mold 100 and the substrate 101 in some cases. For this reason, a defective pattern may be formed, or a substrate and / or a mold may be damaged.
所以,為了以弱的附著力附著於基板周邊構材113的顆粒150不會在意外的時機從基板周邊構材113脫離,被期望將顆粒150從基板周邊構材113預先強制除去。為了實現此,壓印裝置IMP,係具備電源PS。電源 PS,係對基板周邊構材113與模具周邊構材161之間供應包含交流成分的電壓V。由於對基板周邊構材113與模具周邊構材161之間所供應的電壓V使得在基板周邊構材113與模具周邊構材161之間產生電場,由於此電場使得靜電力作用於顆粒150。附著於基板周邊構材113之上表面的顆粒150之中以弱的附著力而附著的顆粒150,係由於此靜電力而從基板周邊構材113之上表面脫離。電源PS,係優選上至少在基板周邊構材113進入以氣流118a與基板101而包圍的空間內之前,將包含交流成分的電壓V供應至基板周邊構材113與模具周邊構材161之間。使從基板周邊構材113之上表面所脫離的顆粒150乘於氣流118a而流動,可進一步乘於氣體131的流動而朝向從模具100遠離的方向排出。基板周邊構材113及模具周邊構材161,係包含透過電源PS施加電壓的導電體。藉此,可抑制在意外的時機,尤其在以氣流118a包圍的空間內從基板周邊構材113之上表面所脫離的顆粒150附著於模具100。 Therefore, in order to prevent the particles 150 adhered to the substrate peripheral structure 113 with a weak adhesive force from detaching from the substrate peripheral structure 113 at an unexpected timing, it is desirable to forcibly remove the particles 150 from the substrate peripheral structure 113 in advance. In order to achieve this, the imprint apparatus IMP is provided with a power source PS. power supply PS: A voltage V including an AC component is supplied between the substrate peripheral member 113 and the mold peripheral member 161. Since the voltage V supplied between the substrate peripheral structure 113 and the mold peripheral structure 161 causes an electric field to be generated between the substrate peripheral structure 113 and the mold peripheral structure 161, an electrostatic force acts on the particles 150 due to the electric field. Among the particles 150 adhering to the upper surface of the substrate peripheral structure 113, the particles 150 adhering with a weak adhesive force are detached from the upper surface of the substrate peripheral structure 113 due to the electrostatic force. The power source PS preferably supplies a voltage V including an AC component between the substrate peripheral member 113 and the mold peripheral member 161 at least before the substrate peripheral member 113 enters the space surrounded by the airflow 118a and the substrate 101. The particles 150 detached from the upper surface of the substrate peripheral member 113 are caused to flow by the airflow 118a, and can be further multiplied by the flow of the gas 131 and discharged in a direction away from the mold 100. The substrate peripheral member 113 and the mold peripheral member 161 include a conductor that applies a voltage through a power source PS. This can prevent particles 150 from adhering to the mold 100 from the upper surface of the substrate peripheral structure 113 in a space surrounded by the airflow 118a at an unexpected time.
於此,作為一例,考量以下情況:從基板101上的已固化的壓印材使模具100分離,使得模具100帶電為-3kV。基板周邊構材113,係採取被接地而其電位為接地電位。基板周邊構材113與模具100之間隙,係採1mm。此情況下的電場的方向係朝上(Z軸的正的方向),電場的強度(絕對值)係3kV/mm。在此例,係優選上以模具周邊構材161的電壓V的平均值成為比-3kV低的電 位(V<-3kV)的方式,透過電源PS對基板周邊構材113與模具周邊構材161之間供應電壓V。藉此,以弱的力而附著於基板周邊構材113之上表面的顆粒150,係透過由於基板周邊構材113與模具周邊構材161之間的電場而形成的靜電力而從基板周邊構材113之上表面脫離。從基板周邊構材113所脫離的顆粒150,係可乘著氣體131的流動而被排出。 Here, as an example, consider the following case: The mold 100 is separated from the solidified imprint material on the substrate 101 so that the mold 100 is charged to -3 kV. The substrate peripheral member 113 is grounded and its potential is a ground potential. The gap between the substrate peripheral structure 113 and the mold 100 is 1 mm. The direction of the electric field in this case is upward (positive direction of the Z axis), and the intensity (absolute value) of the electric field is 3 kV / mm. In this example, it is preferable that the average value of the voltage V of the mold peripheral member 161 is lower than -3 kV. (V <-3kV), a voltage V is supplied between the substrate peripheral structure 113 and the mold peripheral structure 161 through the power supply PS. As a result, the particles 150 attached to the upper surface of the substrate peripheral structure 113 with a weak force pass through the electrostatic force formed by the electric field between the substrate peripheral structure 113 and the mold peripheral structure 161 to construct the structure from the substrate periphery. The upper surface of the material 113 is detached. The particles 150 detached from the substrate peripheral structure 113 can be discharged by the flow of the gas 131.
被供應至基板周邊構材113與模具周邊構材161之間的電壓V,係本發明人所為之實驗的結果,得知:為包含交流成分的電壓的情況,比為固定電壓的情況,使顆粒150從基板周邊構材113脫離的效果高。 The voltage V supplied between the substrate peripheral member 113 and the mold peripheral member 161 is the result of an experiment conducted by the present inventor. It is found that the case where the voltage includes an AC component is more than the case where the voltage is a fixed voltage. The effect of the particles 150 detaching from the substrate peripheral member 113 is high.
以下,一面參照圖8A~圖12C一面說明有關上述的實驗。於圖8A,係示出實驗系統。在此實驗系統,係2個晶圓301、302被分離而彼此平行地配置。晶圓301,係附著漂浮於清潔室中的顆粒300的晶圓,被電性接地。晶圓302,係評價用的晶圓,被透過電源303而施加電壓。 Hereinafter, the above-mentioned experiment will be described with reference to FIGS. 8A to 12C. FIG. 8A shows an experimental system. In this experimental system, two wafers 301 and 302 are separated and arranged in parallel with each other. The wafer 301 is a wafer to which particles 300 floating in the clean room are attached, and is electrically grounded. The wafer 302 is a wafer for evaluation, and a voltage is applied through the power source 303.
在實驗條件A,係如示於圖8B,-1kV的固定電壓被施加於晶圓302。在實驗條件B,係如示於圖8C,施加於晶圓302的電壓被每10秒ON/OFF。實驗條件B,係可理解為將包含交流成分的電壓供應至晶圓301、302間之例。於實驗條件A、B雙方,確認到附著於晶圓301的顆粒300從晶圓301脫離而附著於晶圓302。實驗條件A、B的結果的評價,係對附著於晶圓302的顆粒 300的個數進行計數從而進行。 Under experimental condition A, as shown in FIG. 8B, a fixed voltage of -1 kV was applied to the wafer 302. Under experimental condition B, as shown in FIG. 8C, the voltage applied to the wafer 302 is turned on / off every 10 seconds. The experimental condition B can be understood as an example in which a voltage including an AC component is supplied between the wafers 301 and 302. Under both experimental conditions A and B, it was confirmed that the particles 300 attached to the wafer 301 were detached from the wafer 301 and adhered to the wafer 302. The evaluation of the results of experimental conditions A and B is based on the particles attached to the wafer 302 The number of 300 was counted to perform.
於圖9,係示出附著於為了依實驗條件A下的實驗而準備的晶圓301的顆粒的位置及直徑。附著於晶圓301的顆粒的數量,係736個。將第1個晶圓302如示於圖8A般予以對向於晶圓301而配置,依實驗條件A而對晶圓301、302間施加固定電壓。接著,代替第1個晶圓302使第2個晶圓302如示於圖8A般予以對向於晶圓301而配置,依實驗條件A而對晶圓301、302間施加固定電壓。接著,代替第2個晶圓302使第3個晶圓302如示於圖8A般予以對向於晶圓301而配置,依實驗條件A而對晶圓301、302間施加固定電壓。 In FIG. 9, the positions and diameters of the particles attached to the wafer 301 prepared for the experiment under the experimental condition A are shown. The number of particles attached to the wafer 301 was 736. The first wafer 302 is arranged opposite to the wafer 301 as shown in FIG. 8A, and a fixed voltage is applied between the wafers 301 and 302 according to the experimental condition A. Next, instead of the first wafer 302, the second wafer 302 is arranged opposite to the wafer 301 as shown in FIG. 8A, and a fixed voltage is applied between the wafers 301 and 302 according to the experimental condition A. Next, instead of the second wafer 302, the third wafer 302 is arranged opposite to the wafer 301 as shown in FIG. 8A, and a fixed voltage is applied between the wafers 301 and 302 according to the experimental condition A.
之後,對附著於第1個、第2個、第3個晶圓302的顆粒的個數進行計數。圖10A,係示出附著於第1個晶圓302的顆粒的位置及個數,個數係9個。圖10B,係示出附著於第2個晶圓302的顆粒的位置及個數,個數係1個。圖10C,係示出附著於第3個晶圓302的顆粒的位置及個數,個數係0個。 Thereafter, the number of particles attached to the first, second, and third wafers 302 is counted. FIG. 10A shows the positions and the number of particles attached to the first wafer 302, and the number is nine. FIG. 10B shows the position and number of particles attached to the second wafer 302, and the number is one. FIG. 10C shows the positions and the number of particles attached to the third wafer 302, and the number is zero.
亦即,於使用第1個晶圓302下的第1次的實驗,對於晶圓301附著力弱的9個顆粒從晶圓301脫離而附著於晶圓302。於使用第2個晶圓302下的第2次的實驗,對於晶圓301附著力弱的1個顆粒從晶圓301脫離而附著於晶圓302。於使用第3個晶圓302下的第3次的實驗,係附著於晶圓302的顆粒為0個。附著於晶圓302的顆粒的個數在第2次的實驗比在第1次的實驗減少的原 因,係可理解為:由於第1次的實驗,使得以弱的附著力附著於晶圓301的顆粒減少之故。於第3次的實驗附著於晶圓302的顆粒為0個,係可理解為:於第2次為止的實驗,以弱的吸附力附著於晶圓301的顆粒被全部除去之故。通過第1次、第2次及第3次的實驗,736個顆粒之中的10個(相對於736個為1.4%)被從晶圓301除去。 That is, in the first experiment using the first wafer 302, nine particles with weak adhesion to the wafer 301 detached from the wafer 301 and adhered to the wafer 302. In the second experiment using the second wafer 302, one particle with weak adhesion to the wafer 301 detached from the wafer 301 and adhered to the wafer 302. In the third experiment using the third wafer 302, the number of particles attached to the wafer 302 was zero. The number of particles adhering to the wafer 302 was reduced in the second experiment than in the first experiment. The reason is that the first experiment reduced the number of particles attached to the wafer 301 with a weak adhesion force. In the third experiment, the number of particles attached to the wafer 302 was zero, which is understood to mean that in the experiments up to the second experiment, all the particles attached to the wafer 301 with a weak adsorption force were removed. Through the first, second, and third experiments, 10 of the 736 particles (1.4% of the 736 particles) were removed from the wafer 301.
於圖11,係示出附著於為了依實驗條件B下的實驗而準備的晶圓301的顆粒的位置及直徑。附著於晶圓301的顆粒的數量,係650個。將第1個晶圓302如示於圖8A般予以對向於晶圓301而配置,依實驗條件B對晶圓301、302間施加包含交流成分的電壓。接著,代替第1個晶圓302使第2個晶圓302如示於圖8A般予以對向於晶圓301而配置,依實驗條件B對晶圓301、302間施加包含交流成分的電壓。接著,代替第3個晶圓302使第3個晶圓302如示於圖8A般予以對向於晶圓301而配置,依實驗條件B對晶圓301、302間施加包含交流成分的電壓。 In FIG. 11, the positions and diameters of the particles attached to the wafer 301 prepared for the experiment under the experimental condition B are shown. The number of particles attached to the wafer 301 is 650. The first wafer 302 is arranged opposite to the wafer 301 as shown in FIG. 8A, and a voltage including an AC component is applied between the wafers 301 and 302 according to the experimental condition B. Next, instead of the first wafer 302, the second wafer 302 is arranged opposite to the wafer 301 as shown in FIG. 8A, and a voltage including an AC component is applied between the wafers 301 and 302 according to the experimental condition B. Next, instead of the third wafer 302, the third wafer 302 is arranged opposite to the wafer 301 as shown in FIG. 8A, and a voltage including an AC component is applied between the wafers 301 and 302 according to the experimental condition B.
之後,對附著於第1個、第2個、第3個晶圓302的顆粒的個數進行計數。圖12A,係示出附著於第1個晶圓302的顆粒的位置及個數,個數係27個。圖12B,係示出附著於第2個晶圓302的顆粒的位置及個數,個數係9個。圖12C,係示出附著於第3個晶圓302的顆粒的位置及個數,個數係12個。 Thereafter, the number of particles attached to the first, second, and third wafers 302 is counted. FIG. 12A shows the positions and the number of particles attached to the first wafer 302, and the number is 27. FIG. 12B shows the positions and the number of particles attached to the second wafer 302, and the number is nine. FIG. 12C shows the positions and the number of particles attached to the third wafer 302, and the number is 12.
亦即,於使用第1個晶圓302下的第1次的 實驗,對於晶圓301附著力弱的27個顆粒從晶圓301脫離而附著於晶圓302。於使用第2個晶圓302下的第2次的實驗,對於晶圓301附著力弱的9個顆粒從晶圓301脫離而附著於晶圓302。於使用第3個晶圓302下的第2次的實驗,對於晶圓301附著力弱的12個顆粒從晶圓301脫離而附著於晶圓302。 That is, for the first time under the use of the first wafer 302 In the experiment, 27 particles with weak adhesion to the wafer 301 detached from the wafer 301 and adhered to the wafer 302. In the second experiment using the second wafer 302, nine particles with weak adhesion to the wafer 301 detached from the wafer 301 and adhered to the wafer 302. In the second experiment using the third wafer 302, 12 particles with weak adhesion to the wafer 301 were detached from the wafer 301 and adhered to the wafer 302.
在實驗條件B,係通過第1次、第2次及第3次的實驗,650個顆粒之中的48個(相對於650個為7.4%)被從晶圓301除去。在實驗條件B,係比實驗條件A,可從晶圓301除去較多個顆粒。此外,在實驗條件B,係在第2次、第3次的實驗,亦可從晶圓301除去較多個顆粒。如此,比起如實驗A般使固定力作用於顆粒,如實驗B般使變動的力作用於顆粒,獲得為了減化往構材的表面的顆粒的附著的效果為高的結果。 In the experimental condition B, the first, second, and third experiments were performed, and 48 of the 650 particles (7.4% of the 650 particles) were removed from the wafer 301. Under experimental condition B, a larger number of particles can be removed from wafer 301 than experimental condition A. In addition, under experimental condition B, in the second and third experiments, a plurality of particles may be removed from the wafer 301. In this way, the effect of reducing the adhesion of particles to the surface of the structural material is higher than the effect of applying a fixed force to the particles as in Experiment A and a variable force to the particles as in Experiment B.
於圖4A,係例示性示出透過電源PS而供應至模具周邊構材161的電壓V。電壓V,係包含交流成分的電壓(例如,以交流成分與固定值的和而表現的電壓)。電壓V,係得為以複數個脈衝而構成的脈衝波(脈衝電壓)。或者,電壓V的波形,係可包含矩形波(方形波)、三角波、梯形波、階梯波(電壓階梯狀地變化的波形)及正弦波中至少1者。於圖5A,係示出作為電壓V的波形的一例的6週期份的正弦波。如此,包含交流成分的電壓V,係可為大小跨複數個週期變動的電壓。 FIG. 4A exemplarily shows a voltage V supplied to the mold peripheral member 161 through the power supply PS. The voltage V is a voltage including an AC component (for example, a voltage expressed as a sum of an AC component and a fixed value). The voltage V is a pulse wave (pulse voltage) composed of a plurality of pulses. Alternatively, the waveform of the voltage V may include at least one of a rectangular wave (square wave), a triangular wave, a trapezoidal wave, a step wave (a waveform in which the voltage changes stepwise), and a sine wave. FIG. 5A shows a 6-cycle sine wave as an example of the voltage V waveform. In this way, the voltage V including the AC component may be a voltage whose magnitude varies across a plurality of cycles.
電壓V,係傳統上為極性不變化的電壓,惟 極性變化亦可。電壓V為極性不變化的電壓的情況下,電壓V的極性,係可被設為與在基板101與模具100之間由於模具100的帶電而形成的電場的方向相同的方向的電場被形成於基板周邊構材113與模具周邊構材161之間的極性。此情況下,在包含交流成分的電壓V被賦予於基板周邊構材113與模具周邊構材161之間的期間,係形成於基板周邊構材113與模具周邊構材161之間的電場的方向維持不變的狀態下僅該電場的大小變動。電壓V為極性變化的電壓的情況下,例如,以作用於附著於基板周邊構材113的顆粒150的力的平均作用於從基板周邊構材113使顆粒150脫離的方向的方式而決定供應至模具周邊構材161的電壓V的極性的變化。 The voltage V is a voltage that does not change in polarity. Polarity changes are also possible. When the voltage V is a voltage that does not change in polarity, the polarity of the voltage V can be set in the same direction as the direction of the electric field formed by the charging of the mold 100 between the substrate 101 and the mold 100. Polarity between the substrate peripheral member 113 and the mold peripheral member 161. In this case, while the voltage V including the AC component is being applied between the substrate peripheral member 113 and the mold peripheral member 161, it is the direction of the electric field formed between the substrate peripheral member 113 and the mold peripheral member 161. Only the magnitude of the electric field changes while the state is maintained. When the voltage V is a voltage having a changed polarity, for example, the supply voltage is determined such that the average force of the force applied to the particles 150 attached to the substrate peripheral structure 113 acts on the direction in which the particles 150 are detached from the substrate peripheral structure 113. The polarity of the voltage V of the mold peripheral member 161 changes.
從基板101上的已固化的壓印材使模具100分離,使得模具100帶電為-V0~0V(V0係正的值)的範圍的電壓的情況下,電壓V的峰值-V1(V1係正的值),係優選上為比-V0低的電壓。藉此,可在基板周邊構材113與模具周邊構材161之間使產生比由於模具100的帶電而作用於顆粒150的靜電力強的靜電力的電場產生。為此,可將附著於基板周邊構材113的顆粒預先除去。電壓V從最大值往最小值轉移的時間、及/或從最小值往最大值轉移的時間,係優選上為1秒以下。 When the mold 100 is separated from the cured imprint material on the substrate 101 so that the mold 100 is charged with a voltage in the range of -V0 to 0V (V0 is a positive value), the peak value of the voltage V is -V1 (V1 is a positive Value) is preferably a voltage lower than -V0. Thereby, an electric field can be generated between the substrate peripheral member 113 and the mold peripheral member 161 which generates an electrostatic force stronger than the electrostatic force acting on the particles 150 due to the charging of the mold 100. For this reason, the particles adhering to the substrate peripheral member 113 may be removed in advance. The time for the voltage V to transition from the maximum value to the minimum value and / or the time for the voltage V to transition from the minimum value to the maximum value is preferably 1 second or less.
電壓V的絕對值的最大值,係以比由於模具100的帶電而形成的電場的最大強度強的電場會形成於基板周邊構材113與模具周邊構材161之間的方式而決定為 有利。然而,此非必要條件,比由於模具100的帶電而形成的電場的最大強度弱的電場被形成於基板周邊構材113與模具周邊構材161之間亦可。在此情況下,亦可從基板周邊構材113除去至少一部分的顆粒,可透過提高每單位時間的電壓V的變化率從而提高從基板周邊構材113的顆粒的除去效果。 The maximum value of the absolute value of the voltage V is determined such that an electric field stronger than the maximum intensity of the electric field generated by the charging of the mold 100 is formed between the substrate peripheral member 113 and the mold peripheral member 161. advantageous. However, this optional condition may be such that an electric field that is weaker than the maximum intensity of the electric field formed by the charging of the mold 100 is formed between the substrate peripheral member 113 and the mold peripheral member 161. In this case, at least a part of the particles may be removed from the substrate peripheral member 113, and the effect of removing particles from the substrate peripheral member 113 may be improved by increasing the rate of change of the voltage V per unit time.
於圖6,係例示性示出壓印裝置IMP的動作方法。此動作方法,係透過主控制部(控制部)216而控制。在程序S201,主控制部126,係以基板101上的壓印對象的壓擊區域移動至分配器111之下的方式控制基板驅動機構SDM。在程序S202,主控制部126,係以壓印材被配置於基板101上的壓印對象的壓擊區域的方式控制基板驅動機構SDM及分配器111。於此,往壓擊區域的壓印材的配置,係例如一面透過基板驅動機構SDM使基板101移動一面從分配器111吐出壓印材從而進行。往壓擊區域的壓印材的配置的形式,係任意,例如,壓印材得以複數個液滴的排列的形式而被配置於壓擊區域。 FIG. 6 exemplarily shows an operation method of the imprint apparatus IMP. This operation method is controlled by a main control section (control section) 216. In program S201, the main control unit 126 controls the substrate driving mechanism SDM so that the pressing area of the imprint target on the substrate 101 moves below the dispenser 111. In program S202, the main control unit 126 controls the substrate driving mechanism SDM and the dispenser 111 so that the imprint material is arranged on the imprinting area of the imprint target on the substrate 101. Here, the arrangement of the embossing material to the impact area is performed by, for example, ejecting the embossing material from the dispenser 111 while moving the substrate 101 through the substrate driving mechanism SDM. The arrangement form of the embossing material toward the embossing area is arbitrary. For example, the embossing material can be arranged in the embossing area in the form of a plurality of droplets arranged.
在程序S203,主控制部126,係以基板101上的壓印對象的壓擊區域移動至模具100之下的方式,更詳細而言以該壓擊區域與模具100被位置對準的方式開始基板驅動機構SDM及模具驅動機構MDM的控制。在程序S204,主控制部126,係以在基板周邊構材113與模具周邊構材161對向前開始往基板周邊構材113與模具周邊構材161之間的包含交流成分的電壓V的供應的方式控制 電源PS。對基板周邊構材113與模具周邊構材161之間供應包含交流成分的電壓V,使得在基板周邊構材113與模具周邊構材161之間形成大小變動的電場。由於此電場使得以弱的附著力附著於基板周邊構材113之上表面的顆粒脫離,透過氣流118a被朝從基板周邊構材113的附近遠離的方向排出。可將如此的功能及處理分別稱為清潔功能及清潔處理。清潔功能被設為有效(ON),使得例如於程序S201~S203附著於基板周邊構材113的顆粒(一般而言,附著力應尚弱)會直接脫離。於此,程序S204(電壓V的供應的開始),係可在程序S203結束前被執行。然而,分配器(供應部)111將壓印材供應至基板101(的壓擊區域)的期間,係優選上不進行透過電源PS的往基板周邊構材113與模具周邊構材161之間的電壓V的供應。此係由於電壓V而形成的電場會妨礙透過分配器111的往基板101上的適當位置的壓印材的供應之故。 In step S203, the main control unit 126 starts by moving the pressing area of the imprinted object on the substrate 101 below the mold 100, and more specifically, starts by aligning the pressing area with the mold 100. Control of the substrate driving mechanism SDM and the mold driving mechanism MDM. In step S204, the main control unit 126 starts the supply of the voltage V including the AC component between the substrate peripheral member 113 and the mold peripheral member 161, and forwards between the substrate peripheral member 113 and the mold peripheral member 161. Way to control Power PS. A voltage V including an AC component is supplied between the substrate peripheral member 113 and the mold peripheral member 161, so that an electric field having a variable magnitude is formed between the substrate peripheral member 113 and the mold peripheral member 161. Due to this electric field, particles that adhere to the upper surface of the substrate peripheral structure 113 with a weak adhesive force are detached, and the permeate air flow 118 a is discharged in a direction away from the vicinity of the substrate peripheral structure 113. Such functions and processes can be referred to as cleaning functions and cleaning processes, respectively. The cleaning function is set to ON, so that, for example, particles (in general, the adhesion should be weak) attached to the substrate peripheral structure 113 in the procedures S201 to S203 are directly detached. Here, the routine S204 (start of supply of the voltage V) can be executed before the end of the routine S203. However, it is preferable that the voltage between the substrate peripheral member 113 and the mold peripheral member 161 not be transmitted through the power supply PS while the distributor (supplying section) 111 supplies the imprinted material to (the pressing area of the substrate 101) V supply. This is because the electric field formed by the voltage V hinders the supply of the imprint material passing through the distributor 111 to an appropriate position on the substrate 101.
在程序S205,主控制部126,係以壓印被進行於壓印對象的壓擊區域的方式,控制關聯的構成要素,例如控制基板驅動機構SDM、模具驅動機構MDM、固化部104、對準範圍顯示器107a、107b等。具體而言,在程序S205,係進行使模具100接觸於基板101上的壓印對象的壓擊區域之上的壓印材,使該壓印材固化,之後從該壓印材使模具100分離的壓印處理。在示於圖6之例,程序S205,係在清潔功能為ON的狀態下被進行。亦即,電壓V被供應於基板周邊構材113與模具周邊構材161之 間的狀態下,進行使模具100接觸於基板101上的壓印材,使該壓印材固化,從該壓印材使模具100分離的動作。 In program S205, the main control unit 126 controls the related constituent elements such that the substrate driving mechanism SDM, the mold driving mechanism MDM, the curing unit 104, and the alignment are controlled so that the imprint is performed on the impact area of the imprint object. Range displays 107a, 107b, and the like. Specifically, in step S205, an embossing material that causes the mold 100 to contact the embossing area of the embossing object on the substrate 101 is performed, the embossing material is cured, and then the embossing that separates the mold 100 from the embossing material deal with. In the example shown in FIG. 6, the routine S205 is performed while the cleaning function is ON. That is, the voltage V is supplied to the substrate peripheral member 113 and the mold peripheral member 161. In an intermittent state, an operation of bringing the mold 100 into contact with the imprint material on the substrate 101, curing the imprint material, and separating the mold 100 from the imprint material is performed.
在程序S206,主控制部126,係以往基板周邊構材113與模具周邊構材161之間的電壓V的供應被停止的方式控制電源PS。亦即,主控制部126,係於程序S206,使清潔功能停止(OFF)。 In step S206, the main control unit 126 controls the power supply PS such that the supply of the voltage V between the substrate peripheral member 113 and the mold peripheral member 161 is conventionally stopped. That is, the main control unit 126 is connected to the program S206 to stop (OFF) the cleaning function.
在程序S207,主控制部126,係判斷對於基板101的全部的壓擊區域的壓印是否結束,殘留未處理的壓擊區域的情況下,係返回程序S201而進行對於該未處理的壓擊區域的壓印。另一方面,對於全部的壓擊區域的壓印結束的情況下,係進至程序S208。在程序S208,主控制部126,係判斷對於應處理的全部的基板101的壓印是否結束,殘留未處理的基板101的情況下,係返回程序S201而進行對於該未處理的基板101的壓印。另一方面,對於全部的基板101的壓印結束的情況下,係示於圖6的一連串的處理結束。 In step S207, the main control unit 126 determines whether the imprint on all the pressing regions of the substrate 101 has ended, and if the unprocessed pressing regions remain, it returns to the process S201 to perform the unprocessed pressing. Area embossing. On the other hand, when the embossing has been completed for all the embossed areas, the process proceeds to step S208. In step S208, the main control unit 126 determines whether the imprint on all the substrates 101 to be processed is finished, and if the unprocessed substrate 101 remains, it returns to the process S201 to perform the imprint on the unprocessed substrate 101. Seal. On the other hand, when the imprint on all the substrates 101 is completed, a series of processes shown in FIG. 6 are completed.
於上述的處理,程序S201之中途至S203之中途為止,基板周邊構材113的一部分的區域對向於模具100。然而,基板周邊構材113,係與程序S205的壓印並行而接受清潔處理,故以弱的附著力附著於基板周邊構材113的該區域的顆粒係從基板周邊構材113脫離,被透過氣流118a、氣流113等而排出的可能性高。 In the processing described above, a part of the substrate peripheral structure 113 faces the mold 100 in the middle of the routine S201 to the middle of S203. However, the substrate peripheral structure 113 is subjected to cleaning processing in parallel with the imprinting of the procedure S205. Therefore, particles that adhere to this area of the substrate peripheral structure 113 with a weak adhesive force are separated from the substrate peripheral structure 113 and are transmitted through. The airflow 118a, the airflow 113, and the like are likely to be discharged.
於圖3,係記載示於圖1、圖2的構成的變化 例。在示於圖3之例,係模具周邊構材161被接地,對於基板周邊構材113從電源PS供應包含交流成分的電壓V。電壓V,係可為負的電壓或正的電壓。對基板周邊構材113與模具周邊構材161之間透過電源PS供應包含交流成分的電壓V使得在基板周邊構材113與模具周邊構材161之間形成電場。此電場使靜電力作用於基板周邊構材113之上的顆粒使得顆粒被從基板周邊構材113除去。 FIG. 3 shows a change of the structure shown in FIG. 1 and FIG. 2 example. In the example shown in FIG. 3, the mold peripheral member 161 is grounded, and the substrate peripheral member 113 is supplied with a voltage V including an AC component from a power source PS. The voltage V can be a negative voltage or a positive voltage. A voltage V containing an AC component is supplied between the substrate peripheral member 113 and the mold peripheral member 161 through a power supply PS so that an electric field is formed between the substrate peripheral member 113 and the mold peripheral member 161. This electric field causes electrostatic force to act on the particles on the substrate peripheral structure 113 so that the particles are removed from the substrate peripheral structure 113.
於此,如同前述之例,考量如下情況:從基板101上的已固化的壓印材使模具100分離,使得模具100帶電為-3kV。模具周邊構材161,係採取被接地而其電位為接地電位。基板周邊構材113與模具100之間隙,係採1mm。此情況下的電場的方向係朝上(Z軸的正的方向),電場的強度(絕對值)係3kV/mm。在此例,係優選上以基板周邊構材113的電壓V成為比+3kV高的電位(V>+3kV)的方式,透過電源PS對基板周邊構材113與模具周邊構材161之間供應電壓V。藉此,以弱的力附著於基板周邊構材113之上表面的顆粒150,係透過由於基板周邊構材113與模具周邊構材161之間的電場而形成的靜電力而從基板周邊構材113之上表面脫離。從基板周邊構材113脫離。從基板周邊構材113所脫離的顆粒150,係可乘著氣體131的流動而被排出。 Here, as in the previous example, consider the following: The mold 100 is separated from the solidified imprint material on the substrate 101 so that the mold 100 is charged to -3 kV. The mold surrounding structure 161 is grounded and its potential is the ground potential. The gap between the substrate peripheral structure 113 and the mold 100 is 1 mm. The direction of the electric field in this case is upward (positive direction of the Z axis), and the intensity (absolute value) of the electric field is 3 kV / mm. In this example, it is preferable to supply the substrate peripheral structure 113 and the mold peripheral structure 161 through the power supply PS so that the voltage V of the substrate peripheral structure 113 becomes a higher potential (V> + 3kV) than + 3kV. Voltage V. As a result, the particles 150 attached to the upper surface of the substrate peripheral structure 113 with a weak force are transmitted from the substrate peripheral structure through the electrostatic force formed by the electric field between the substrate peripheral structure 113 and the mold peripheral structure 161. 113 upper surface detached. Detach from the substrate peripheral member 113. The particles 150 detached from the substrate peripheral structure 113 can be discharged by the flow of the gas 131.
如從以上的說明而明朗化,接地電位被供應至基板周邊構材113及模具周邊構材161中的一方,電壓V被供應至基板周邊構材113及模具周邊構材161中的另 一方。或者,亦可於其他形式,電源PS,係以電壓V被供應於基板周邊構材113與模具周邊構材161之間的方式,對於基板周邊構材113及模具周邊構材161雙方供應與接地電位係不同的電位。 As is clear from the above description, the ground potential is supplied to one of the substrate peripheral member 113 and the mold peripheral member 161, and the voltage V is supplied to the other of the substrate peripheral member 113 and the mold peripheral member 161. Party. Alternatively, in other forms, the power supply PS may be supplied between the substrate peripheral structure 113 and the mold peripheral structure 161 in such a manner that the voltage V is supplied to both the substrate peripheral structure 113 and the mold peripheral structure 161. The potentials are different potentials.
迄今為止的說明,係雖注目於附著於基板周邊構材113的顆粒的除去,惟靜電力亦作用於附著於模具周邊構材161的顆粒,被從模具周邊構材161除去。藉此,抑制以弱的附著力附著於模具周邊構材161的顆粒落下至基板101上。 Although the description so far focused on the removal of the particles attached to the substrate peripheral member 113, the electrostatic force also acts on the particles attached to the mold peripheral member 161 and is removed from the mold peripheral member 161. Thereby, the particles which adhere to the mold peripheral member 161 with a weak adhesion force are prevented from falling onto the substrate 101.
於圖4B,係例示性示出透過電源PS而供應至基板周邊構材113的電壓V。電壓V,係包含交流成分的電壓(例如,以交流成分與固定值的和而表現的電壓)。電壓V,係得為以複數個脈衝而構成的脈衝波。或者,電壓V,係得為矩形波(方形波)、三角波、梯形波、階梯波。或者,電壓V,係得為如示於圖5B的正弦波。透過電源PS而供應於基板周邊構材113的電壓V,係可為大小跨複數個週期變動的電壓。此外,包含交流成分的電壓V,係可在該電壓V被賦予於基板周邊構材113與模具周邊構材161之間的期間,包含在不改變被形成於基板周邊構材113與模具周邊構材161之間的電場的方向的狀態下僅使該電場的大小變動的電壓。 In FIG. 4B, the voltage V supplied to the substrate peripheral member 113 through the power supply PS is exemplarily shown. The voltage V is a voltage including an AC component (for example, a voltage expressed as a sum of an AC component and a fixed value). The voltage V is a pulse wave composed of a plurality of pulses. Alternatively, the voltage V is a rectangular wave (square wave), a triangular wave, a trapezoidal wave, or a step wave. Alternatively, the voltage V is a sine wave as shown in FIG. 5B. The voltage V supplied to the substrate peripheral member 113 through the power supply PS is a voltage that can vary in magnitude over a plurality of cycles. In addition, the voltage V including the AC component can be included while the voltage V is applied between the substrate peripheral member 113 and the mold peripheral member 161 without changing the substrate peripheral member 113 and the mold peripheral member. A voltage that changes only the magnitude of the electric field in the state of the direction of the electric field between the materials 161.
於圖7,係例示性示出壓印裝置IMP的動作方法或運用方法。在程序S211,係進行保養。保養,係有時由作業員進行,有時亦透過壓印裝置IMP所具有的 功能而進行。保養,係可包含例如分配器111、基板夾具102或模具夾具110的檢查、修理、清潔或交換。於此保養,顆粒可能附著於基板周邊構材113及/或模具周邊構材161。 FIG. 7 exemplarily shows an operation method or an operation method of the imprint apparatus IMP. In program S211, maintenance is performed. Maintenance is sometimes performed by the operator and sometimes through the imprinting device IMP. Function. Maintenance may include, for example, inspection, repair, cleaning, or exchange of the dispenser 111, the substrate holder 102, or the mold holder 110. During the maintenance, particles may adhere to the substrate peripheral structure 113 and / or the mold peripheral structure 161.
所以,在保養結束後且再開始壓印處理前的期間,對基板周邊構材113與模具周邊構材161之間透過電源PS而供應包含交流成分的電壓V。具體而言,接著程序S11,實施程序S212、S213。在程序S212,主控制部126,係以基板周邊構材113對應於模具周邊構材161的方式控制基板驅動機構SDM。主控制部126,係因應於表示保養的結束的信號被輸入而執行程序S212。接著程序S212,在程序S213,主控制部126,係以往基板周邊構材113與模具周邊構材161之間的電壓V的供應被開始的方式控制電源PS。藉此,電壓V被供應於基板周邊構材113與模具周邊構材161之間,在基板周邊構材113與模具周邊構材161之間,形成大小變動的電場。由於此電場使得以弱的附著力而附著於基板周邊構材113之上表面的顆粒被從基板周邊構材113上除去。 Therefore, after the maintenance is completed and before the imprint process is restarted, a voltage V including an AC component is supplied between the substrate peripheral member 113 and the mold peripheral member 161 through the power supply PS. Specifically, programs S212 and S213 are performed next to program S11. In program S212, the main control unit 126 controls the substrate driving mechanism SDM so that the substrate peripheral member 113 corresponds to the mold peripheral member 161. The main control unit 126 executes program S212 in response to the input of a signal indicating the end of maintenance. Following step S212, in step S213, the main control unit 126 controls the power supply PS so that the supply of the voltage V between the substrate peripheral member 113 and the mold peripheral member 161 is started. Thereby, the voltage V is supplied between the substrate peripheral member 113 and the mold peripheral member 161, and an electric field having a variable magnitude is formed between the substrate peripheral member 113 and the mold peripheral member 161. Due to this electric field, particles attached to the upper surface of the substrate peripheral structure 113 with a weak adhesive force are removed from the substrate peripheral structure 113.
依如此的動作方法或運用方法時,通過保養使得可能附著於基板周邊構材113及/或模具周邊構材161的顆粒(一般而言,附著力應尚弱)可被直接除去。 According to such an operation method or an application method, particles that may be attached to the substrate peripheral structure 113 and / or the mold peripheral structure 161 (generally, the adhesion should be weak) can be directly removed by maintenance.
供應於基板周邊構材113與模具周邊構材161之間的包含交流成分的電壓V的正負、大小等,係亦可基於透過配置於壓印裝置IMP內的電位計而計測模具100 的電位的結果而決定。或者,該電壓V的正負、大小等,係亦可定期取出模具100而基於計測模具100的電位的結果而決定。 The positive, negative, and magnitude of the voltage V including the AC component supplied between the substrate peripheral member 113 and the mold peripheral member 161 can also be measured based on a potentiometer disposed in the imprint apparatus IMP. The result of the potential is determined. Alternatively, the positive, negative, magnitude, and the like of the voltage V may be determined periodically based on the result of measuring the potential of the mold 100 by periodically removing the mold 100.
模具周邊構材161,係如例示於圖13,可具有將模具100之側面跨全方位而包圍的形狀。然而,模具周邊構材161,係如例示於圖14,亦可由被分割而配置於配置模具100的區域的周邊的模具周邊構材330a、330b、330c而構成。透過採用如此的構成,使得可使為了將機構配置於模具100的周邊的自由度提升。可配置於模具100的周邊的機構方面,係例如可列舉:對模具100之側面施加力而使模具100變形為目標形狀的機構、為了壓印材與模具100的接觸及分離而使模具100移動於Z方向的驅動機構、調整模具100的傾斜的驅動機構等。此外,採用被分割的模具周邊構材330a、330b、333c,對模具周邊構材330a、330b、333c從電源PS供應電壓V,使得可使電場非基板周邊構材113的整體而產生於局部區域。在基板周邊構材113之上係使用於基板101、微動台等的位置的校準的基準標示、對供於使壓印材固化用的曝光光的照度進行計測的照度感測器等曝於電場,可防止對使用基準標示的計測、照度感測器的計測結果時造成影響。 The mold peripheral structure 161, as illustrated in FIG. 13, may have a shape that surrounds the sides of the mold 100 across the entire surface. However, the mold peripheral structure 161 is exemplified in FIG. 14 and may be configured by the mold peripheral structures 330a, 330b, and 330c that are divided and arranged around the area where the mold 100 is disposed. By adopting such a configuration, the degree of freedom for disposing the mechanism around the mold 100 can be improved. Examples of mechanisms that can be arranged around the mold 100 include a mechanism that deforms the mold 100 into a target shape by applying a force to the side surface of the mold 100, and moves the mold 100 to A driving mechanism in the Z direction, a driving mechanism for adjusting the inclination of the mold 100, and the like. In addition, the divided mold peripheral members 330a, 330b, and 333c are used to supply the voltage V from the power source PS to the mold peripheral members 330a, 330b, and 333c, so that the entire electric field non-substrate peripheral member 113 can be generated in a local area. . Above the substrate peripheral structure 113, a reference mark for calibration of the position of the substrate 101, the micro-motion stage, etc., an illuminance sensor for measuring the illuminance of the exposure light for curing the imprint material, etc. are exposed to an electric field, It can prevent the measurement result of the reference mark and the measurement result of the illuminance sensor from being affected.
說明有關模具周邊構材330a、330b、330c各者的配置及角色。模具周邊構材330a,係可相對於模具100被配置於-X方向。亦即,模具周邊構材330a,係俯 視(從+Z方向所見時的圖)下,可被配置於與從模具100朝向分配器111的方向係相反方向。模具周邊構材330a的長邊方向的長度,係優選上比模具100的形成圖案的部分100a的長邊方向長。 The arrangement and role of each of the mold peripheral members 330a, 330b, and 330c will be described. The mold peripheral member 330 a may be disposed in the −X direction with respect to the mold 100. That is, the mold peripheral structure 330a is It can be arranged in a direction opposite to the direction from the mold 100 toward the dispenser 111 (viewed from the + Z direction). The length in the longitudinal direction of the mold peripheral member 330 a is preferably longer than the longitudinal direction of the pattern-forming portion 100 a of the mold 100.
模具周邊構材330a,係使用於執行示於圖6的流程圖的處理之時。如例示於圖15,模具周邊構材330a,係與包含在壓印處理中模具100與基板101及基板周邊構材113對向的區域的區域320對向。對於模具周邊構材330a在前述時機供應包含交流電壓的電壓V,使得可使弱附著於基板周邊構材113上的顆粒從基板周邊構材113之上表面脫離。 The mold peripheral member 330a is used when the process shown in the flowchart of FIG. 6 is executed. For example, as shown in FIG. 15, the mold peripheral structure 330 a is opposed to the area 320 including a region where the mold 100 faces the substrate 101 and the substrate peripheral structure 113 during the imprint process. A voltage V including an AC voltage is supplied to the mold peripheral structure 330 a at the aforementioned timing, so that particles that are weakly adhered to the substrate peripheral structure 113 can be detached from the upper surface of the substrate peripheral structure 113.
模具周邊構材330b、330c,係相對於模具100可被配置於+X方向側,且比模具周邊構材330a靠±Y方向側。模具周邊構材330b、330c,係使用於示於圖7的流程圖的處理之時。可使用周邊構材330b而使弱附著於示於圖16的區域340,使用模具周邊構材330c而使弱附著於示於圖17的區域350的顆粒從基板周邊構材113之上表面脫離。在將區域320、330、350總合的區域,至少使附著於基板周邊構材113之上表面的顆粒定期地脫離,使得可防止在意外的時機顆粒被拉近至模具100而發生圖案缺陷。 The mold peripheral members 330b and 330c may be arranged on the + X direction side with respect to the mold 100 and on the ± Y direction side than the mold peripheral member 330a. The mold peripheral members 330b and 330c are used during the processing shown in the flowchart of FIG. The peripheral structure 330b can be used to weakly adhere to the area 340 shown in FIG. 16, and the mold peripheral structure 330c can be used to separate the particles weakly adhered to the area 350 shown in FIG. 17 from the upper surface of the substrate peripheral structure 113. In a region in which the regions 320, 330, and 350 are combined, at least the particles adhering to the upper surface of the substrate peripheral structure 113 are periodically detached, so that it is possible to prevent the particles from being drawn close to the mold 100 at an unexpected timing to cause pattern defects.
以下,說明有關物品製造方法。在此,係作為一例,說明作為物品製造裝置(半導體積體電路元件、液晶顯示元件等)的物品製造方法。物品製造方法,係包 含利用上述的壓印裝置而在基板(晶圓、玻璃板、膜狀基板)形成圖案的程序。再者,該製造方法,係可包含處理(例如,蝕刻)形成圖案的基板的程序。另外,製造規則化媒體(patterned media)(記錄媒體)、光學元件等的其他物品的情況下,該製造方法係可代替蝕刻包含對形成圖案的基板進行加工的其他處理。本實施形態的物品製造方法,係比起歷來的方法,於物品的性能/品質/生產性/生產成本中的至少一者方面有利。 Hereinafter, a method for manufacturing the article will be described. Here, as an example, an article manufacturing method as an article manufacturing apparatus (semiconductor integrated circuit element, liquid crystal display element, etc.) will be described. Article manufacturing method, tying A procedure for forming a pattern on a substrate (wafer, glass plate, film substrate) using the above-mentioned imprint apparatus is included. The manufacturing method may include a process of processing (for example, etching) a patterned substrate. In addition, in the case of manufacturing other articles such as patterned media (recording media) and optical elements, this manufacturing method can be used instead of etching and other processes including processing a patterned substrate. The article manufacturing method of this embodiment is more advantageous than conventional methods in at least one of performance, quality, productivity, and production cost of the article.
本發明非限定於上述實施形態者,不脫離本發明的精神及範圍之下,可進行各種變更及變化。因此,為了公開本發明的範圍,附上以下的請求項。 The present invention is not limited to those described above, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, in order to disclose the scope of the present invention, the following claims are attached.
本案,係以2016年2月29日提出的日本專利特願2016-037999及2016年11月16日提出的日本專利特願2016-223348為基礎而主張優先權者,將其記載內容之全部,援用於此。 This case is based on Japanese Patent Application No. 2016-037999 filed on February 29, 2016 and Japanese Patent Application No. 2016-223348 filed on November 16, 2016. Use it for this.
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| JP2016223348A JP6789772B2 (en) | 2016-02-29 | 2016-11-16 | Imprint equipment, imprint method and article manufacturing method |
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| KR102542639B1 (en) * | 2021-02-10 | 2023-06-12 | 성균관대학교산학협력단 | Apparatus and method for forming fine pattern |
| KR102528880B1 (en) * | 2021-02-16 | 2023-05-03 | 성균관대학교산학협력단 | Fabrication of nanostructrues by secondary interference effect between microstructures using electrohydrodynamic instability patterning technology and method of manufacturing superhydrophobic surface |
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| TW200905727A (en) * | 2007-04-06 | 2009-02-01 | Canon Kk | Exposure apparatus and original |
| TW201604934A (en) * | 2014-07-15 | 2016-02-01 | 佳能股份有限公司 | Imprint apparatus, and method of manufacturing article |
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| JP6171412B2 (en) * | 2013-03-06 | 2017-08-02 | 大日本印刷株式会社 | Imprint method, imprint mold and imprint apparatus |
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