TWI632054B - Copper foil for high-frequency circuits, copper-clad laminated board for high-frequency circuits, printed wiring boards for high-frequency circuits, copper foil with carrier for high-frequency circuits, electronic equipment, and methods for manufacturing printed wiring boards - Google Patents
Copper foil for high-frequency circuits, copper-clad laminated board for high-frequency circuits, printed wiring boards for high-frequency circuits, copper foil with carrier for high-frequency circuits, electronic equipment, and methods for manufacturing printed wiring boards Download PDFInfo
- Publication number
- TWI632054B TWI632054B TW103113621A TW103113621A TWI632054B TW I632054 B TWI632054 B TW I632054B TW 103113621 A TW103113621 A TW 103113621A TW 103113621 A TW103113621 A TW 103113621A TW I632054 B TWI632054 B TW I632054B
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- Prior art keywords
- layer
- copper foil
- copper
- carrier
- plating
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 364
- 239000011889 copper foil Substances 0.000 title claims abstract description 227
- 238000000034 method Methods 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000010949 copper Substances 0.000 claims abstract description 147
- 229910052802 copper Inorganic materials 0.000 claims abstract description 143
- 239000011163 secondary particle Substances 0.000 claims abstract description 128
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 127
- 239000011164 primary particle Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 39
- 239000010941 cobalt Substances 0.000 claims abstract description 29
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910002058 ternary alloy Inorganic materials 0.000 claims abstract description 10
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 201
- 229920005989 resin Polymers 0.000 claims description 111
- 239000011347 resin Substances 0.000 claims description 111
- 239000002245 particle Substances 0.000 claims description 101
- 229910052759 nickel Inorganic materials 0.000 claims description 49
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 claims description 33
- 238000005259 measurement Methods 0.000 claims description 33
- 229910045601 alloy Inorganic materials 0.000 claims description 28
- 239000000956 alloy Substances 0.000 claims description 28
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 27
- 229910000077 silane Inorganic materials 0.000 claims description 27
- 229910017052 cobalt Inorganic materials 0.000 claims description 26
- 229910052804 chromium Inorganic materials 0.000 claims description 25
- 238000007788 roughening Methods 0.000 claims description 25
- 229910052725 zinc Inorganic materials 0.000 claims description 23
- 239000011888 foil Substances 0.000 claims description 21
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 19
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 19
- 239000000654 additive Substances 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 19
- 238000010168 coupling process Methods 0.000 claims description 19
- 238000005859 coupling reaction Methods 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 229910052742 iron Inorganic materials 0.000 claims description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 229910018605 Ni—Zn Inorganic materials 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 13
- 229920001721 polyimide Polymers 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 229910052785 arsenic Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 229920002401 polyacrylamide Polymers 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 50
- 230000005540 biological transmission Effects 0.000 abstract description 28
- 239000010410 layer Substances 0.000 description 438
- 239000007788 liquid Substances 0.000 description 50
- 238000005530 etching Methods 0.000 description 34
- 239000000203 mixture Substances 0.000 description 33
- 230000015556 catabolic process Effects 0.000 description 31
- 238000006731 degradation reaction Methods 0.000 description 31
- 239000011651 chromium Substances 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 239000011701 zinc Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 16
- 239000004020 conductor Substances 0.000 description 15
- VDGMIGHRDCJLMN-UHFFFAOYSA-N [Cu].[Co].[Ni] Chemical compound [Cu].[Co].[Ni] VDGMIGHRDCJLMN-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 229910000881 Cu alloy Inorganic materials 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000004744 fabric Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- NVIVJPRCKQTWLY-UHFFFAOYSA-N cobalt nickel Chemical compound [Co][Ni][Co] NVIVJPRCKQTWLY-UHFFFAOYSA-N 0.000 description 9
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 9
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000002335 surface treatment layer Substances 0.000 description 8
- 229910020630 Co Ni Inorganic materials 0.000 description 7
- 229910002440 Co–Ni Inorganic materials 0.000 description 7
- 239000006087 Silane Coupling Agent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 229910003296 Ni-Mo Inorganic materials 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- -1 for example Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000008595 infiltration Effects 0.000 description 5
- 238000001764 infiltration Methods 0.000 description 5
- 150000004756 silanes Chemical class 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 229910001316 Ag alloy Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 4
- 230000003449 preventive effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 4
- 239000001509 sodium citrate Substances 0.000 description 4
- RWVGQQGBQSJDQV-UHFFFAOYSA-M sodium;3-[[4-[(e)-[4-(4-ethoxyanilino)phenyl]-[4-[ethyl-[(3-sulfonatophenyl)methyl]azaniumylidene]-2-methylcyclohexa-2,5-dien-1-ylidene]methyl]-n-ethyl-3-methylanilino]methyl]benzenesulfonate Chemical compound [Na+].C1=CC(OCC)=CC=C1NC1=CC=C(C(=C2C(=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=2C(=CC(=CC=2)N(CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=C1 RWVGQQGBQSJDQV-UHFFFAOYSA-M 0.000 description 4
- 229910018104 Ni-P Inorganic materials 0.000 description 3
- 229910018100 Ni-Sn Inorganic materials 0.000 description 3
- 229910018536 Ni—P Inorganic materials 0.000 description 3
- 229910018532 Ni—Sn Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000002500 effect on skin Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- LSRGDVARLLIAFM-UHFFFAOYSA-N sulfuric acid;hexahydrate Chemical compound O.O.O.O.O.O.OS(O)(=O)=O LSRGDVARLLIAFM-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- 229910001200 Ferrotitanium Inorganic materials 0.000 description 2
- 229910018054 Ni-Cu Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910018481 Ni—Cu Inorganic materials 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000007809 chemical reaction catalyst Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 150000004677 hydrates Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 2
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
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- 230000008569 process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920002994 synthetic fiber Polymers 0.000 description 2
- 239000012209 synthetic fiber Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 150000003751 zinc Chemical class 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- DQIPXGFHRRCVHY-UHFFFAOYSA-N chromium zinc Chemical compound [Cr].[Zn] DQIPXGFHRRCVHY-UHFFFAOYSA-N 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- WHDPTDWLEKQKKX-UHFFFAOYSA-N cobalt molybdenum Chemical compound [Co].[Co].[Mo] WHDPTDWLEKQKKX-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- KSFBTBXTZDJOHO-UHFFFAOYSA-N diaminosilicon Chemical compound N[Si]N KSFBTBXTZDJOHO-UHFFFAOYSA-N 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
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- 239000012467 final product Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
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- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
- H05K3/025—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Laminated Bodies (AREA)
Abstract
本發明提供一種即便用於高頻電路基板亦可良好地抑制傳輸損耗,並且良好地抑制銅箔表面之落粉之產生的高頻電路用銅箔。本發明之高頻電路用銅箔係於銅箔之表面形成銅之一次粒子層之後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金之二次粒子層而成的銅箔,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1500以上。 The present invention provides a copper foil for a high-frequency circuit that can satisfactorily suppress transmission loss even when used in a high-frequency circuit substrate, and also can suppress the occurrence of powder falling on the surface of the copper foil. The copper foil for high-frequency circuits of the present invention is formed by forming a primary particle layer of copper on the surface of the copper foil, and then forming a secondary particle layer of a ternary alloy of copper, cobalt, and nickel on the primary particle layer. The average value of the roughness of the roughened surface of the copper foil obtained by a laser microscope was 1500 or more.
Description
本發明係關於一種高頻電路用銅箔、高頻電路用覆銅積層板、高頻電路用印刷配線板、高頻電路用附載體銅箔、電子機器、及印刷配線板之製造方法。 The present invention relates to a method for manufacturing a copper foil for high-frequency circuits, a copper-clad laminated board for high-frequency circuits, a printed wiring board for high-frequency circuits, a copper foil with a carrier for high-frequency circuits, an electronic device, and a printed wiring board.
印刷配線板於此半個世紀取得了較大發展,目前已用於幾乎所有電子機器中。近年來,隨著電子機器之小型化、高性能化需求之增大,搭載零件之高密度安裝化或訊號之高頻化逐步推進,對於印刷配線板要求優異之高頻對應。 The printed wiring board has made great progress in this half century, and has been used in almost all electronic machines. In recent years, with the increasing demand for miniaturization and high performance of electronic equipment, high-density mounting of mounted parts or high-frequency of signals has been gradually promoted, and excellent high-frequency response is required for printed wiring boards.
為了確保輸出訊號之品質,對高頻用基板要求傳輸損耗之減少。傳輸損耗主要包括由樹脂(基板側)引起之介電體損耗、及由導體(銅箔側)引起之導體損耗。樹脂之介電常數及介電損耗正切越小,介電體損耗越少。於高頻訊號中,導體損耗之主要原因在於:因頻率越高電流越僅於導體之表面流動之集膚效應而使電流流動之截面積減少、電阻提高。 In order to ensure the quality of the output signal, the transmission loss of the high-frequency substrate is required to be reduced. Transmission loss mainly includes dielectric loss caused by resin (substrate side) and conductor loss caused by conductor (copper foil side). The smaller the dielectric constant and the dielectric loss tangent of the resin, the smaller the dielectric loss. In high-frequency signals, the main reason for conductor losses is that the higher the frequency, the more the skin effect of the current flowing only on the surface of the conductor, which reduces the cross-sectional area of current flow and increases the resistance.
作為以減少高頻用銅箔之傳輸損耗為目的之技術,例如於專利文獻1中揭示一種高頻電路用金屬箔,其於金屬箔表面之單面或雙面被 覆銀或銀合金,於該銀或銀合金被覆層上,較上述銀或銀合金被覆層之厚度更薄地施加銀或銀合金以外之被覆層。並且,記載有藉此可提供即便於如衛星通訊中使用之超高頻區域中亦減少由集膚效應引起之損耗的金屬箔。 As a technology for the purpose of reducing the transmission loss of high-frequency copper foil, for example, Patent Document 1 discloses a metal foil for a high-frequency circuit, which is coated on one or both sides of the surface of the metal foil. A silver or silver alloy coating is applied to the silver or silver alloy coating layer with a coating layer other than silver or a silver alloy thinner than the thickness of the silver or silver alloy coating layer. In addition, it is described that a metal foil that can reduce the loss due to the skin effect even in an ultra-high frequency region such as that used in satellite communications is described.
又,專利文獻2中揭示一種高頻電路用粗化處理壓延銅箔,其特徵在於:壓延銅箔之再結晶退火後之壓延面上之利用X射線繞射求出之(200)面之積分強度(I(200))相對於微粉末銅之利用X射線繞射求出之(200)面之積分強度(I0(200))即I(200)/I0(200)>40,對該壓延面進行利用電解鍍敷之粗化處理後之粗化處理面之算術平均粗糙度(以下設為Ra)為0.02μm~0.2μm,十點平均粗糙度(以下設為Rz)為0.1μm~1.5μm,並且其為印刷電路基板用原材料。並且,記載有藉此可提供可於超過1GHz之高頻下使用之印刷電路板。 In addition, Patent Document 2 discloses a roughened rolled copper foil for high-frequency circuits, which is characterized in that the integral of the (200) plane obtained by X-ray diffraction is used on the rolled surface of the rolled copper foil after recrystallization annealing. The intensity (I (200)) is relative to the integrated intensity (I0 (200)) of the (200) plane obtained by X-ray diffraction of fine powder copper, that is, I (200) / I0 (200)> 40. After the surface is roughened by electrolytic plating, the arithmetic average roughness (hereinafter referred to as Ra) of the surface is 0.02 μm to 0.2 μm, and the ten-point average roughness (hereinafter referred to as Rz) is 0.1 μm to 1.5 μm, and it is a raw material for a printed circuit board. In addition, it is described that a printed circuit board that can be used at a high frequency exceeding 1 GHz is provided.
進而,專利文獻3中揭示一種電解銅箔,其特徵在於:銅箔之表面之一部分為由結瘤狀突起構成之表面粗糙度為2μm~4μm之凹凸面。並且,記載有藉此可提供高頻傳輸特性優異之電解銅箔。 Furthermore, Patent Document 3 discloses an electrolytic copper foil characterized in that a part of the surface of the copper foil is a concave-convex surface having a surface roughness of 2 μm to 4 μm formed by nodular protrusions. In addition, it is described that an electrolytic copper foil having excellent high-frequency transmission characteristics can be provided.
[專利文獻1]日本專利第4161304號公報 [Patent Document 1] Japanese Patent No. 4161304
[專利文獻2]日本專利第4704025號公報 [Patent Document 2] Japanese Patent No. 4704025
[專利文獻3]日本特開2004-244656號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2004-244656
已知由導體(銅箔側)引起之導體損耗之原因在於如上所述般因集膚效應而使電阻變大,但該電阻不僅存在銅箔本身之電阻之影響, 亦存在藉由於銅箔表面為了確保與樹脂基板之接著性而進行之粗化處理形成的表面處理層之電阻之影響,具體而言,銅箔表面之粗糙度為導體損耗之主要因素,粗糙度越小傳輸損耗越減少。 It is known that the reason for the conductor loss caused by the conductor (on the copper foil side) is that the resistance increases due to the skin effect as described above, but this resistance is not only affected by the resistance of the copper foil itself, There is also the influence of the resistance of the surface treatment layer formed by the roughening treatment performed on the surface of the copper foil to ensure adhesion to the resin substrate. Specifically, the roughness of the surface of the copper foil is the main factor of conductor loss. The smaller the transmission loss, the smaller the transmission loss.
本發明者對銅箔表面之粗糙度與傳輸損耗之關係進一步進行了深入研究,結果發現:銅箔表面之粗糙度越小未必傳輸損耗越減少,尤其是若銅箔表面之粗糙度減小至某一程度,則於傳輸損耗之減少與銅箔表面之粗糙度之關係上可見明顯之波動,難以僅藉由控制銅箔表面之粗糙度而良好地減少傳輸損耗。 The inventors further studied the relationship between the roughness of the copper foil surface and transmission loss, and found that the smaller the roughness of the copper foil surface, the lower the transmission loss, especially if the roughness of the copper foil surface is reduced to To a certain extent, obvious fluctuations can be seen in the relationship between the reduction of transmission loss and the roughness of the copper foil surface, and it is difficult to reduce the transmission loss well only by controlling the roughness of the copper foil surface.
又,作為銅箔表面之粗化處理,已知形成鈷-鎳合金鍍層,關於習知之形成有鈷-鎳合金鍍層之銅箔,由於形成於其表面之由銅-鈷-鎳合金鍍敷構成之粗化粒子之形狀為樹枝狀,故而會產生自該樹枝之上部或根部剝離脫落、通常稱為落粉現象之問題。 In addition, as a roughening treatment of the surface of a copper foil, it is known to form a cobalt-nickel alloy plating layer. As for a conventional copper foil having a cobalt-nickel alloy plating layer formed thereon, a copper-cobalt-nickel alloy plating is formed on the surface. The shape of the roughened particles is dendritic, which causes problems such as peeling off from the upper part or root of the branch, which is commonly referred to as powder falling.
該落粉現象為麻煩之問題,雖銅-鈷-鎳合金鍍敷之粗化處理層具有耐熱性優異之特徵,但粒子容易因外力而脫落,從而出現如下問題:產生由處理中之「摩擦」引起之剝離、由剝離粉引起之輥之髒污、由剝離粉引起之蝕刻殘渣。 This powder falling phenomenon is a troublesome problem. Although the roughened layer of the copper-cobalt-nickel alloy plating has the characteristics of excellent heat resistance, the particles are liable to fall off due to external forces, so that the following problems occur: "Stripping caused by peeling, roller contamination caused by peeling powder, etching residue caused by peeling powder.
因此,本發明之目的在於提供一種即便用於高頻電路基板亦可良好地抑制傳輸損耗,並且良好地抑制形成於銅箔表面之粗化粒子自該表面剝離脫落之現象即所謂「落粉」之產生的高頻電路用銅箔。 Therefore, an object of the present invention is to provide a so-called "falling powder" that can well suppress transmission loss even when used in a high-frequency circuit board, and that can suppress the phenomenon that coarsened particles formed on the surface of a copper foil are peeled off from the surface. The resulting high-frequency circuit uses copper foil.
本發明者發現對於抑制用於高頻電路基板時之傳輸損耗、及抑制銅箔表面之落粉極為有效的是:於附載體銅箔之極薄銅層表面形成特定之粗化粒子層,且控制該粗化粒子層表面之凹凸高度的平均值。 The present inventors have found that it is extremely effective for suppressing transmission loss when used in a high-frequency circuit board and suppressing powder fall on the surface of a copper foil: forming a specific roughened particle layer on the surface of an ultra-thin copper layer with a carrier copper foil, and The average value of the uneven height of the surface of the roughened particle layer is controlled.
本發明係基於上述見解而完成者,於一態樣中係一種高頻電路用銅箔,其係於銅箔表面形成銅之一次粒子層之後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金之二次粒子層而成的銅箔,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1500以上。 The present invention was completed based on the above-mentioned findings. In one aspect, it is a copper foil for high-frequency circuits. After forming a primary particle layer of copper on the surface of the copper foil, copper, cobalt and copper are formed on the primary particle layer. The copper foil formed from the secondary particle layer of a ternary alloy made of nickel has an average roughness height of 1500 or more of the roughened surface obtained by a laser microscope.
本發明之高頻電路用銅箔於一實施形態中,該銅之一次粒子層的平均粒徑為0.25~0.45μm,由銅、鈷及鎳構成之三元系合金形成之二次粒子層的平均粒徑為0.35μm以下。 In one embodiment of the copper foil for high-frequency circuits of the present invention, the average particle diameter of the primary particle layer of the copper is 0.25 to 0.45 μm, and the secondary particle layer of a ternary alloy composed of copper, cobalt, and nickel is used. The average particle diameter is 0.35 μm or less.
本發明之高頻電路用銅箔於另一實施形態中,該一次粒子層及二次粒子層為電鍍層。 In another embodiment of the copper foil for high-frequency circuits of the present invention, the primary particle layer and the secondary particle layer are electroplated layers.
本發明之高頻電路用銅箔於進而另一實施形態中,二次粒子為於該一次粒子上成長之1個或複數個樹枝狀粒子或於該一次粒子上成長之正常鍍層。 In still another embodiment of the copper foil for a high-frequency circuit of the present invention, the secondary particles are one or a plurality of dendritic particles grown on the primary particles or a normal plating layer grown on the primary particles.
本發明之高頻電路用銅於進而另一實施形態中,利用雷射顯微鏡獲得之該粗化處理面之凹凸高度的平均值為1500以上2000以下。 In still another embodiment of the copper for a high-frequency circuit according to the present invention, the average value of the uneven height of the roughened surface obtained by a laser microscope is 1500 to 2000.
本發明之高頻電路用銅箔於進而另一實施形態中,一次粒子層及二次粒子層之剝離強度為0.80kg/cm以上。 In still another embodiment of the copper foil for a high-frequency circuit of the present invention, the peel strength of the primary particle layer and the secondary particle layer is 0.80 kg / cm or more.
本發明之高頻電路用銅箔於進而另一實施形態中,一次粒子層及二次粒子層之剝離強度為0.90kg/cm以上。 In still another embodiment of the copper foil for a high-frequency circuit according to the present invention, the peel strength of the primary particle layer and the secondary particle layer is 0.90 kg / cm or more.
本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上形成有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及 (B)鉻酸鹽層之任一者或兩者。 In still another embodiment of the copper foil for high-frequency circuits of the present invention, on the secondary particle layer, (A) is composed of Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, and P. , W, Mn, Sn, As, and Ti, an alloy layer composed of one or more elements, and (B) Either or both of the chromate layers.
本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上依序形成有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者,及矽烷偶合層。 In still another embodiment of the copper foil for high-frequency circuits of the present invention, on the secondary particle layer are sequentially formed: (A) from Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, and Al An alloy layer composed of one or more elements consisting of P, W, Mn, Sn, As, and Ti, and (B) one or both of a chromate layer, and a silane coupling layer.
本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上形成有Ni-Zn合金層及鉻酸鹽層之任一者或兩者。 In still another embodiment of the copper foil for a high-frequency circuit of the present invention, one or both of a Ni-Zn alloy layer and a chromate layer are formed on the secondary particle layer.
本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上依序形成有:Ni-Zn合金層及鉻酸鹽層之任一者或兩者,及矽烷偶合層。 In still another embodiment of the copper foil for a high-frequency circuit of the present invention, one or both of a Ni-Zn alloy layer and a chromate layer, and a silane coupling are sequentially formed on the secondary particle layer. Floor.
本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層之表面具備樹脂層。 In still another embodiment of the copper foil for a high-frequency circuit of the present invention, a resin layer is provided on a surface of the secondary particle layer.
本發明之高頻電路用銅箔於進而另一實施形態中,於該由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層、或該鉻酸鹽層、或該矽烷偶合層、或該Ni-Zn合金層之表面具備樹脂層。 In still another embodiment of the copper foil for a high-frequency circuit of the present invention, the copper foil is composed of Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As, and Ti. The surface of the alloy layer composed of one or more elements, or the chromate layer, the silane coupling layer, or the Ni-Zn alloy layer includes a resin layer.
本發明於另一態樣中係一種附載體銅箔,係於載體之一面或 雙面依序具有中間層、極薄銅層者,該極薄銅層為本發明之高頻電路用銅箔。 In another aspect, the present invention is a copper foil with a carrier, which is on one side of the carrier or Both sides have an intermediate layer and an ultra-thin copper layer in this order. The ultra-thin copper layer is the copper foil for high-frequency circuits of the present invention.
本發明之附載體銅箔於一實施形態中,於該載體之一面依序具有該中間層、該極薄銅層,於該載體之另一面具有粗化處理層。 In one embodiment, the copper foil with a carrier of the present invention has the intermediate layer, the ultra-thin copper layer in order on one side of the carrier, and a roughened layer on the other side of the carrier.
本發明於進而另一態樣中係一種高頻電路用覆銅積層板,其使用有本發明之銅箔。 In still another aspect, the present invention is a copper-clad laminated board for high-frequency circuits, which uses the copper foil of the present invention.
本發明於進而另一態樣中係一種高頻電路用印刷配線板,其使用有本發明之銅箔。 In still another aspect, the present invention is a printed wiring board for a high-frequency circuit, which uses the copper foil of the present invention.
本發明之高頻電路用覆銅積層板於一實施形態中,積層有該銅箔與聚醯亞胺、液晶聚合物或氟樹脂。 In one embodiment, the copper-clad laminated board for a high-frequency circuit of the present invention is laminated with the copper foil and polyimide, a liquid crystal polymer, or a fluororesin.
本發明於進而另一態樣中係本發明之高頻電路用印刷配線板,其使用有聚醯亞胺、液晶聚合物或氟樹脂之任一者。 This invention is another one aspect. WHEREIN: The printed wiring board for high frequency circuits of this invention uses any one of polyimide, a liquid crystal polymer, or a fluororesin.
本發明於進而另一態樣中係一種電子機器,其使用有本發明之印刷配線板。 In still another aspect, the present invention is an electronic device using the printed wiring board of the present invention.
本發明於進而另一態樣中係一種印刷配線板之製造方法,其含有如下步驟:準備本發明之附載體銅箔與絕緣基板;將該附載體銅箔與絕緣基板積層;及於將該附載體銅箔與絕緣基板積層後,經過將該附載體銅箔之載體剝離之步驟而形成覆銅積層板,然後,藉由半加成法、減成法、部分加成法或改良半加成法之任一種方法形成電路。 In yet another aspect, the present invention is a method for manufacturing a printed wiring board, which includes the following steps: preparing the copper foil with a carrier and an insulating substrate of the present invention; laminating the copper foil with a carrier and an insulating substrate; and After laminating the copper foil with the carrier and the insulating substrate, the copper-clad laminated board is formed through the step of peeling the carrier of the copper foil with the carrier, and then the semi-additive method, the subtractive method, the partial additive method, or the modified semi-additive method are used. Either method forms a circuit.
本發明於進而另一態樣中係一種印刷配線板之製造方法,其含有如下步驟:於本發明之附載體銅箔的該極薄銅層側表面形成電路;以埋沒該電路之方式於該附載體銅箔之該極薄銅層側表面形成樹脂層於該樹脂層上形成電路;於該樹脂層上形成電路後,剝離該載體;及藉由在剝離該載體後去除該極薄銅層,而使形成於該極薄銅層側表面之埋沒於該樹脂層的電路露出。 In still another aspect, the present invention is a method for manufacturing a printed wiring board, which includes the following steps: forming a circuit on the ultra-thin copper layer side surface of the copper foil with a carrier of the present invention; and burying the circuit in the circuit. A resin layer is formed on the resin layer side surface of the copper foil with a carrier to form a resin layer on the resin layer; after the circuit is formed on the resin layer, the carrier is peeled off; and the ultra-thin copper layer is removed after the carrier is peeled off. , And the circuit formed on the side surface of the ultra-thin copper layer buried in the resin layer is exposed.
藉由本發明,可提供一種即便用於高頻電路基板亦可良好地抑制傳輸損耗,並且良好地抑制形成於銅箔表面之粗化粒子自該表面剝離脫落之現象即所謂「落粉」之產生的高頻電路用銅箔。 According to the present invention, even if it is used for a high-frequency circuit substrate, it is possible to provide a so-called "falling powder" which can well suppress the phenomenon that the roughened particles formed on the surface of the copper foil are peeled off and peeled off from the surface. Copper foil for high-frequency circuits.
圖1係表示於習知之銅箔上進行由銅-鈷-鎳合金鍍敷構成之粗化處理的情形時落粉之情況的概念說明圖。 FIG. 1 is a conceptual explanatory diagram showing a case of falling powder when a roughening treatment consisting of copper-cobalt-nickel alloy plating is performed on a conventional copper foil.
圖2係本發明之於銅箔上預先形成一次粒子層、於該一次粒子層上形成由銅-鈷-鎳合金鍍敷構成之二次粒子層之無落粉之銅箔處理層的概念說明圖。 FIG. 2 is a conceptual illustration of a non-falling copper foil treatment layer of the present invention in which a primary particle layer is formed in advance on a copper foil, and a secondary particle layer composed of copper-cobalt-nickel alloy plating is formed on the primary particle layer; Illustration.
圖3係於習知之銅箔上進行由銅-鈷-鎳合金鍍敷構成之粗化處理之情形時表面的顯微鏡照片。 FIG. 3 is a microscope photograph of a surface when a roughening treatment consisting of copper-cobalt-nickel alloy plating is performed on a conventional copper foil.
圖4係本發明之於銅箔上預先形成一次粒子層、於該一次粒子層上形 成由銅-鈷-鎳合金鍍敷構成之二次粒子層之無落粉之銅箔處理面之層的顯微鏡照片。 FIG. 4 shows a primary particle layer formed in advance on a copper foil according to the present invention, and the primary particle layer is formed on the copper foil. A microscope photograph of a layer of powder-free copper foil treated surface of a secondary particle layer composed of copper-cobalt-nickel alloy plating.
圖5之A~C係使用本發明之附載體銅箔的印刷配線板之製造方法之具體例的至鍍敷電路、去除抗蝕劑為止之步驟中之配線板剖面的示意圖。 A to C in FIG. 5 are schematic cross-sectional views of a wiring board in steps of plating a circuit and removing a resist in a specific example of a method for manufacturing a printed wiring board using a copper foil with a carrier of the present invention.
圖6之D~F係使用本發明之附載體銅箔之印刷配線板之製造方法之具體例的自積層樹脂及第2層附載體銅箔至雷射開孔為止之步驟中之配線板剖面的示意圖。 D to F in FIG. 6 are cross-sections of the wiring board in the steps from the self-laminating resin and the second layer of copper foil with the carrier to the laser opening in the specific example of the method for manufacturing a printed wiring board with the carrier copper foil of the present invention Schematic.
圖7之G~I係使用本發明之附載體銅箔之印刷配線板之製造方法之具體例的自形成通孔填充物至剝離第1層之載體為止之步驟中之配線板剖面的示意圖。 G ~ I of FIG. 7 are schematic diagrams of cross-sections of the wiring board in the steps from forming a through-hole filler to peeling off the carrier of the first layer in a specific example of the method for manufacturing a printed wiring board using the copper foil with a carrier of the present invention.
圖8之J~K係使用本發明之附載體銅箔之印刷配線板之製造方法之具體例的自快速蝕刻至形成凸塊、銅柱為止之步驟中之配線板剖面的示意圖。 J ~ K in FIG. 8 are schematic diagrams of a cross-section of a wiring board in a specific example of the method for manufacturing a printed wiring board with a copper foil with a carrier according to the present invention in the steps from rapid etching to formation of bumps and copper pillars.
圖9係表示實施例1之高度直方圖之平均值(凹凸高度)之利用解析軟體KVH1A9獲得之解析結果的電腦畫面之圖像。 FIG. 9 is an image of a computer screen showing the analysis result obtained by the analysis software KVH1A9 of the average (height of bumps) of the height histogram in Example 1. FIG.
圖10係解析軟體KVH1A9之VK-8500用戶手冊4-3頁之「DISTANCE‧PITCH之設定」中揭示之操作畫面的例。 Fig. 10 is an example of the operation screen disclosed in "Setting DISTANCE · PITCH" on page 4-3 of the VK-8500 user manual of the analysis software KVH1A9.
可於本發明中使用之銅箔基材之形態並無特別限制,典型而言,本發明中使用之銅箔可為電解銅箔或壓延銅箔中任一者。通常,電解銅箔係利用硫酸銅鍍浴將銅電解析出至鈦或不鏽鋼之轉筒上而製造,壓延銅箔係重複進行利用壓延輥之塑性加工與熱處理而製造。於要求彎曲性之 用途中,多數情況下應用壓延銅箔。 The form of the copper foil base material that can be used in the present invention is not particularly limited. Typically, the copper foil used in the present invention can be either an electrolytic copper foil or a rolled copper foil. Generally, electrolytic copper foil is produced by electrolyzing copper onto a drum of titanium or stainless steel using a copper sulfate plating bath, and rolled copper foil is produced by repeatedly performing plastic processing and heat treatment using a calender roll. For flexibility In applications, rolled copper foil is used in many cases.
作為銅箔基材之材料,除了通常用作印刷配線板之導體圖案之精銅或無氧銅等高純度銅以外,亦可使用例如摻Sn銅、摻Ag銅、添加有Cr、Zr或Mg等之銅合金、添加有Ni及Si等之卡遜系銅合金之類的銅合金。再者,於本說明書中,單獨使用用語「銅箔」時,亦包含銅合金箔。 As the material of the copper foil substrate, in addition to high-purity copper such as fine copper or oxygen-free copper, which is usually used as a conductor pattern of printed wiring boards, for example, Sn-doped copper, Ag-doped copper, and Cr, Zr, or Mg may be added. Copper alloys such as copper alloys such as Carson-based copper alloys to which Ni and Si are added. In addition, in this specification, when the term "copper foil" is used alone, a copper alloy foil is also included.
再者,銅箔基材之板厚無需特別限定,例如為1~1000μm、1~500μm、1~300μm、3~100μm、5~70μm、6~35μm、或9~18μm。 The thickness of the copper foil substrate is not particularly limited, and is, for example, 1 to 1000 μm, 1 to 500 μm, 1 to 300 μm, 3 to 100 μm, 5 to 70 μm, 6 to 35 μm, or 9 to 18 μm.
又,本發明之另一態樣係一種附載體銅箔,係依序具有載體、中間層、極薄銅層者,上述極薄銅層為本發明之高頻電路用銅箔。即,於本發明之另一態樣中,可使用依序具有載體、中間層、極薄銅層之附載體銅箔作為銅箔基材。於本發明中使用附載體銅箔之情形時,於極薄銅層表面設置以下粗化處理層等表面處理層。再者,附載體銅箔之另一實施之形態係如下所述。 Furthermore, another aspect of the present invention is a copper foil with a carrier, which has a carrier, an intermediate layer, and an ultra-thin copper layer in this order. The ultra-thin copper layer is the copper foil for high-frequency circuits of the present invention. That is, in another aspect of the present invention, a copper foil with a carrier having a carrier, an intermediate layer, and an ultra-thin copper layer in this order can be used as the copper foil base material. When the copper foil with a carrier is used in the present invention, a surface treatment layer such as the following roughening treatment layer is provided on the surface of the ultra-thin copper layer. In addition, another embodiment of the copper foil with a carrier is as follows.
通常,為了提高銅箔與樹脂基材接著之面即粗化面於積層後之銅箔之剝離強度,於脫脂後之銅箔之表面實施進行「結瘤」狀之電鍍之粗化處理。電解銅箔於製造時具有凹凸,藉由粗化處理增強電解銅箔之凸部而進一步擴大凹凸。有進行通常之銅鍍敷等作為粗化前之前處理之情況,亦有為防止電鍍物之脫落而進行通常之銅鍍敷等作為粗化後之完工處理之情況。 Generally, in order to improve the peeling strength of the copper foil after laminating the copper foil and the resin substrate, that is, the roughened surface, the surface of the copper foil after degreasing is subjected to a "nodular" plating roughening treatment. The electrolytic copper foil has unevenness at the time of manufacture, and the convex portion of the electrolytic copper foil is enhanced by roughening treatment to further enlarge the unevenness. There are cases where ordinary copper plating and the like are performed as a treatment before the roughening, and in order to prevent the plating material from falling off, ordinary copper plating and the like are performed as a finish treatment after the roughening.
於本發明中,所謂「粗化處理」包括此種前處理及完工處理,視需要亦包括與銅箔粗化相關之公知之處理。 In the present invention, the so-called "roughening treatment" includes such a pretreatment and a finishing treatment, and also includes a known treatment related to the copper foil roughening, if necessary.
將該粗化處理設為藉由銅-鈷-鎳合金鍍敷進行(以下說明 中,為明確與前步驟之差異,將銅-鈷-鎳合金鍍敷之粗化處理稱為「二次粒子層」),但若如上所述般僅單純地於銅箔之上形成銅-鈷-鎳合金鍍層,則會產生如上所述之落粉等問題。 This roughening treatment is performed by copper-cobalt-nickel alloy plating (described below) In order to clarify the difference from the previous step, the roughening treatment of copper-cobalt-nickel alloy plating is called "secondary particle layer"), but as described above, copper is simply formed on the copper foil- Cobalt-nickel alloy plating may cause problems such as falling powder as described above.
將銅箔之上形成有銅-鈷-鎳合金鍍層之銅箔之表面的顯微鏡照片示於圖3。如該圖3所示,可見延伸成樹枝狀之微細粒子。通常,該圖3所示之延伸成樹枝狀之微細粒子以高電流密度製作。 A microscope photograph of the surface of a copper foil on which copper-cobalt-nickel alloy plating is formed on the copper foil is shown in FIG. 3. As shown in FIG. 3, fine particles extending into a dendritic shape can be seen. Generally, the fine particles extended into a dendritic shape shown in FIG. 3 are produced with a high current density.
於在此種高電流密度下進行處理之情形時,可抑制於初期電鍍中產生粒子核,且於粒子前端形成新的粒子核,因此細長之粒子逐漸成長為樹枝狀。 In the case of processing under such a high current density, it is possible to suppress the generation of particle nuclei in the initial plating and to form new particle nuclei at the tip of the particles. Therefore, the elongated particles gradually grow into dendritic shapes.
因此,若為防止此種情況而降低電流密度並進行電鍍,則尖減少,粒子增加,帶弧度之形狀之粒子成長。然而,於此種狀況下,落粉亦得以略微改善,但無法獲得充分之剝離強度,無法充分地達成本案發明之目的。 Therefore, if the current density is reduced and plating is performed in order to prevent this, the tip decreases, the particles increase, and particles with an arc shape grow. However, in this situation, falling powder can also be slightly improved, but sufficient peel strength cannot be obtained, and the purpose of the invention cannot be fully achieved.
將如圖3所示之形成銅-鈷-鎳合金鍍層之情形時的落粉之情況示於圖1之概念說明圖。該落粉之原因在於:如上所述般於銅箔上微細粒子生成為樹枝狀,該樹枝狀之粒子容易因外力使樹枝之一部分折斷,又自根部脫落。該微細樹枝狀之粒子係由處理中之「摩擦」引起之剝離、由剝離粉引起之輥之髒污、由剝離粉引起之產生蝕刻殘渣的原因。 The situation of powder falling when the copper-cobalt-nickel alloy plating layer is formed as shown in FIG. 3 is shown in the conceptual explanatory diagram of FIG. 1. The reason for the falling powder is that as described above, fine particles are formed into a dendritic shape on the copper foil, and the dendritic particles easily break a part of the branch due to external force and fall off from the root. The fine dendritic particles are caused by peeling caused by "friction" during processing, contamination of the roller by peeling powder, and etching residues caused by peeling powder.
於本發明中,於銅箔之表面預先形成銅之一次粒子層後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金形成之二次粒子層。將於銅箔上形成有該一次粒子及二次粒子之表面之顯微鏡照片示於圖4(詳細內容係如下所述)。 In the present invention, after a primary particle layer of copper is formed in advance on the surface of a copper foil, a secondary particle layer made of a ternary alloy of copper, cobalt, and nickel is formed on the primary particle layer. A micrograph of the surface on which the primary particles and secondary particles are formed on a copper foil is shown in FIG. 4 (the details are described below).
藉此,使由處理中之「摩擦」引起之剝離、由剝離粉引起之輥之髒污、 由剝離粉引起之蝕刻殘渣消失,即可抑制稱為落粉之現象,可獲得能夠提高剝離強度且提高高頻特性的高頻電路用銅箔。 As a result, peeling caused by "friction" during processing, roller contamination caused by peeling powder, The disappearance of the etching residue caused by the peeling powder can suppress a phenomenon called powder falling, and a copper foil for a high-frequency circuit capable of improving peeling strength and improving high-frequency characteristics can be obtained.
根據下述所示之實施例可闡明,防止落粉最佳之條件係將上述一次粒子層之平均粒徑設為0.25~0.45μm、將由銅、鈷及鎳構成之三元系合金形成之二次粒子層之平均粒徑設為0.35μm以下。上述一次粒子層之平均粒徑之下限較佳為0.27μm以上,更佳為0.29μm以上,更佳為0.30μm以上,進而較佳為0.33μm以上。上述一次粒子層之平均粒徑之上限較佳為0.44μm以下,更佳為0.43μm以下,更佳為0.40μm以下,進而較佳為0.39μm以下。又,上述二次粒子層之平均粒徑之上限較佳為0.34μm以下,更佳為0.33μm以下,更佳為0.32μm以下,進而較佳為0.31μm以下,進而較佳為0.30μm以下,進而更佳為0.28μm以下,較佳為0.27μm以下。又,二次粒子層之平均粒徑之下限無需特別限定,例如為0.001μm以上、0.01μm以上、0.05μm以上、0.09μm以上、0.10μm以上、0.12μm以上、或0.15μm以上。 According to the examples shown below, it can be clarified that the optimal conditions for preventing powder fall are the second one in which the average particle diameter of the primary particle layer is set to 0.25 to 0.45 μm, and a ternary alloy composed of copper, cobalt, and nickel is formed. The average particle diameter of the secondary particle layer is 0.35 μm or less. The lower limit of the average particle diameter of the primary particle layer is preferably 0.27 μm or more, more preferably 0.29 μm or more, more preferably 0.30 μm or more, and still more preferably 0.33 μm or more. The upper limit of the average particle diameter of the primary particle layer is preferably 0.44 μm or less, more preferably 0.43 μm or less, more preferably 0.40 μm or less, and still more preferably 0.39 μm or less. The upper limit of the average particle diameter of the secondary particle layer is preferably 0.34 μm or less, more preferably 0.33 μm or less, still more preferably 0.32 μm or less, still more preferably 0.31 μm or less, and still more preferably 0.30 μm or less. It is more preferably 0.28 μm or less, and more preferably 0.27 μm or less. The lower limit of the average particle diameter of the secondary particle layer is not particularly limited, and is, for example, 0.001 μm or more, 0.01 μm or more, 0.05 μm or more, 0.09 μm or more, 0.10 μm or more, 0.12 μm or more, or 0.15 μm or more.
上述一次粒子層及二次粒子層藉由電鍍層而形成。該二次粒子之特徵在於:於上述一次粒子上成長之1個或複數個樹枝狀之粒子。或者於上述一次粒子上成長之正常鍍敷。即,於本說明書中使用用語「二次粒子層」之情形時,亦包含被覆鍍敷等正常鍍層。又,二次粒子層可為具有一層以上由粗化粒子形成之層者,可為具有一層以上正常鍍層者,亦可為分別具有一層以上由粗化粒子形成之層與正常鍍層者。 The primary particle layer and the secondary particle layer are formed by a plating layer. The secondary particles are characterized by one or a plurality of dendritic particles growing on the primary particles. Or normal plating grown on the primary particles. That is, when the term "secondary particle layer" is used in this specification, normal plating such as coating plating is also included. The secondary particle layer may be one having more than one layer made of roughened particles, one having more than one layer of normal plating, or one having more than one layer of roughened particles and normal plating, respectively.
如此形成之一次粒子層及二次粒子層之剝離強度可達到0.80kg/cm以上,進而剝離強度達到0.90kg/cm以上。 The peel strength of the primary particle layer and the secondary particle layer thus formed can reach 0.80 kg / cm or more, and further the peel strength can reach 0.90 kg / cm or more.
於形成有一次粒子層及二次粒子層之銅箔中,進而重要的是將利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值設為1500以上、較佳為1600以上、更佳為1700以上、進而較佳為1800以上、進而更佳為1900以上。再者,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值之上限無需特別設置,例如為4500以下、3500以下、3100以下、3000以下、2900以下、或2800以下。 In the copper foil in which the primary particle layer and the secondary particle layer are formed, it is further important to set the average value of the unevenness of the roughened surface obtained by a laser microscope to 1,500 or more, preferably 1600 or more, and more preferably It is 1700 or more, more preferably 1800 or more, and still more preferably 1900 or more. In addition, the upper limit of the average value of the unevenness height of the roughened surface obtained by a laser microscope does not need to be specifically set, and is, for example, 4500 or less, 3500 or less, 3100 or less, 3000 or less, 2900 or less, or 2800 or less.
本發明之特徵在於形成具有一次粒子層及二次粒子層之層化處理層,該粗化處理層之理想狀態係如圖2所示之於較大之一次粒子層1層上形成有1~2層較小之二次粒子層的狀態。現實而言,亦存在一次粒子與二次粒子均使粒子重疊成一段之情況,於形成複雜之層後,難以根據粒徑推測層之高度。作為通常之傾向,例如,於小之一次粒子上形成大致與一次粒子相同或其以上之大小之二次粒子之情況,及於大之一次粒子上較厚地形成小之二次粒子之情況均欠佳,難以具體地控制該組合。因此,發現於本發明中藉由著眼於「利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值」之巨觀目標並對其進行控制,可形成具有如下效果之粗化處理層:即便不對一次粒子與二次粒子之組合之詳細結構進行控制,亦可提高穩定之剝離強度與防止穩定之落粉現象。再者,所謂「利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值」中之「粗化處理面」,係意指最終製品上之表面,並意指形成有一次粒子層及二次粒子層之側之最表面。又,於二次粒子層上形成例如耐熱層、防銹層、矽烷偶合處理層等表面處理層時,係意指該表面處理層之最表面。再者,於形成下述「樹脂層」時,係意指該樹脂層除外之銅箔之形成有一次粒子層及二次粒子層之側之最表 面。 The present invention is characterized in that a layering treatment layer having a primary particle layer and a secondary particle layer is formed. An ideal state of the roughening treatment layer is as shown in FIG. 2. 1 to 1 is formed on a larger primary particle layer. The state of two smaller secondary particle layers. In reality, there are cases where both the primary particles and the secondary particles overlap the particles. After forming a complicated layer, it is difficult to estimate the height of the layer based on the particle size. As a general tendency, for example, a case where a secondary particle having a size approximately the same as or larger than that of a primary particle is formed on a small primary particle, and a case where a small secondary particle is formed thickly on a large primary particle are both insufficient. It is difficult to specifically control the combination. Therefore, it was found in the present invention that by focusing on the macroscopic target of "the average value of the unevenness of the roughened surface obtained by the laser microscope" and controlling it, a roughened layer having the following effects can be formed: Even if the detailed structure of the combination of the primary particles and the secondary particles is not controlled, the stable peeling strength can be improved and the stable powder falling phenomenon can be prevented. In addition, the "roughened surface" in the "average of the height of the unevenness of the roughened surface obtained by a laser microscope" means the surface on the final product, and means that a primary particle layer and two The outermost side of the secondary particle layer. When a surface treatment layer such as a heat-resistant layer, a rust prevention layer, or a silane coupling treatment layer is formed on the secondary particle layer, it means the outermost surface of the surface treatment layer. In addition, when forming the following "resin layer", it means the surface of the copper foil excluding the resin layer on which the primary particle layer and the secondary particle layer are formed. surface.
若利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值未達1500,則形成有一次粒子層及二次粒子層之銅箔因二次粒子層堆積,而使粗化粒子之巨觀高度之凹凸差變小,容易產生落粉現象。 If the average value of the uneven height of the roughened surface obtained by the laser microscope is less than 1500, the copper foil with the primary particle layer and the secondary particle layer formed will have a large view of the roughened particles due to the accumulation of the secondary particle layer. The unevenness of the height becomes smaller, and the powder falling phenomenon easily occurs.
利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值之測量法係藉由如下方法進行設定:對於使用基恩斯股份有限公司製造之雷射顯微鏡VK8500將倍率設定為1000倍而測量粗化處理面所得之結果,藉由有效面積為786432μm2(測量區域100%)之測量解析,將凹凸高度使用解析軟體KVH1A9直方圖化,求出其平均值。 The measurement method of the average value of the uneven height of the roughened surface obtained by a laser microscope is set by measuring roughening processing by setting the magnification to 1000 times using a laser microscope VK8500 manufactured by Keynes Corporation. The results obtained on the surface were analyzed by measurement and analysis with an effective area of 786,432 μm 2 (100% of the measurement area), and the height of the unevenness was converted into a histogram using the analysis software KVH1A9 to obtain an average value.
可於二次粒子層上形成:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者。 Can be formed on the secondary particle layer: (A) consists of Ni and one or more elements selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As and Ti Or (B) one or both of the chromate layer.
又,可於二次粒子層上依序形成(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者,及矽烷偶合層。 Further, (A) Ni and a group selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As, and Ti may be sequentially formed on the secondary particle layer. Any one or both of an alloy layer composed of element, and (B) a chromate layer, and a silane coupling layer.
進而,可於二次粒子層上形成Ni-Zn合金層及鉻酸鹽層之任一者或兩者。 Furthermore, either or both of the Ni-Zn alloy layer and the chromate layer can be formed on the secondary particle layer.
進而,可於二次粒子層上依序形成Ni-Zn合金層及鉻酸鹽層之任一者或兩者,及矽烷偶合層。 Furthermore, one or both of a Ni-Zn alloy layer and a chromate layer, and a silane coupling layer can be sequentially formed on the secondary particle layer.
藉由此種構成,可於維持剝離強度之狀態下提高高頻傳輸特性。 With this configuration, high-frequency transmission characteristics can be improved while maintaining the peeling strength.
於傳輸損耗較小之情形時,可抑制以高頻進行訊號傳輸時訊號之衰減,因此以高頻進行訊號之傳輸之電路可進行穩定之訊號之傳輸。因此,傳輸損耗之值較小者適合用於以高頻進行訊號之傳輸之電路用途,故而較佳。將表面處理銅箔與市售之液晶聚合物樹脂(Kuraray股份有限公司製造之Vecstar CTZ-50μm)貼合後,利用蝕刻以特性阻抗成為50Ω之方式形成微帶線路,使用HP公司製造之網路分析儀HP8720C測量穿透係數,求出於頻率20GHz及頻率40GHz之傳輸損耗,於此情形時,頻率20GHz之傳輸損耗較佳為未達5.0dB/10cm,更佳為未達4.1dB/10cm,進而較佳為未達3.7dB/10cm。 When the transmission loss is small, the signal attenuation can be suppressed when transmitting signals at high frequencies, so the circuit transmitting signals at high frequencies can perform stable signal transmission. Therefore, the smaller the value of the transmission loss is, the better it is suitable for use in a circuit for transmitting a signal at a high frequency. The surface-treated copper foil was bonded to a commercially available liquid crystal polymer resin (Vecstar CTZ-50 μm manufactured by Kuraray Co., Ltd.), and a microstrip line was formed by etching to have a characteristic impedance of 50 Ω. A network manufactured by HP was used. The analyzer HP8720C measures the transmission coefficient and finds the transmission loss at the frequency of 20GHz and 40GHz. In this case, the transmission loss at 20GHz is preferably less than 5.0dB / 10cm, and more preferably 4.1dB / 10cm. Furthermore, it is preferably less than 3.7 dB / 10 cm.
可將本發明之表面處理銅箔自粗化處理面側與樹脂基板貼合而製造積層體。樹脂基板只要具有可應用於印刷配線板等之特性,則不受特別限制,例如,剛性PWB用中可使用紙基材酚系樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布/紙複合基材環氧樹脂、玻璃布/玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂等,FPC用中可使用聚酯膜或聚醯亞胺膜、液晶聚合物(LCP)膜、氟樹脂等。再者,於使用液晶聚合物(LCP)膜或氟樹脂膜之情形時,與使用聚醯亞胺膜之情形時相比,有該膜與表面處理銅箔之剝離強度變小之傾向。因此,於使用液晶聚合物(LCP)膜或氟樹脂膜之情形時,藉由於形成銅電路後以覆蓋層被覆銅電路,該膜與銅電路不易剝離,可防止因剝離強度之降低引起之該膜與銅電路之剝離。 The surface-treated copper foil of the present invention can be laminated to a resin substrate from the roughened surface side to produce a laminated body. The resin substrate is not particularly limited as long as it has characteristics applicable to printed wiring boards. For example, paper substrate phenol resin, paper substrate epoxy resin, and synthetic fiber cloth substrate epoxy resin can be used for rigid PWB. , Glass cloth / paper composite substrate epoxy resin, glass cloth / glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, etc. In FPC, polyester film or polyimide film, liquid crystal polymerization can be used. (LCP) film, fluororesin, etc. When a liquid crystal polymer (LCP) film or a fluororesin film is used, the peel strength between the film and the surface-treated copper foil tends to be smaller than when a polyimide film is used. Therefore, in the case of using a liquid crystal polymer (LCP) film or a fluororesin film, since the copper circuit is covered with a cover layer after the copper circuit is formed, the film and the copper circuit are not easily peeled off, which can prevent this due to a decrease in peel strength. Peeling of film from copper circuit.
再者,液晶聚合物(LCP)膜或氟樹脂膜之介電損耗正切小,因此使用液晶聚合物(LCP)膜或氟樹脂膜與本發明之表面處理銅箔之覆銅積層板、 印刷配線板、印刷電路板適於高頻電路(以高頻進行訊號之傳輸之電路)用途。又,本發明之表面處理銅箔之表面粗糙度Rz小,光澤度高,因此表面平滑,亦適於高頻電路用途。 Furthermore, the dielectric loss tangent of the liquid crystal polymer (LCP) film or the fluororesin film is small, so the liquid crystal polymer (LCP) film or the fluororesin film and the copper-clad laminated board of the surface-treated copper foil of the present invention, Printed wiring boards and printed circuit boards are suitable for high-frequency circuits (circuits that transmit signals at high frequencies). In addition, the surface-treated copper foil of the present invention has a small surface roughness Rz and high gloss, so the surface is smooth and suitable for high-frequency circuit applications.
關於貼合之方法,於剛性PWB用之情形時,準備將樹脂含浸於玻璃布等基材而使樹脂硬化至半硬化狀態的預浸體。可藉由將銅箔自與被覆層相反之側之面與預浸體重疊並進行加熱加壓而進行。於FPC之情形時,可藉由如下方式製造積層板:於聚醯亞胺膜等基材經由接著劑或不使用接著劑而於高溫高壓下積層接著銅箔,或者對聚醯亞胺前驅物進行塗佈、乾燥、硬化等。 Regarding the bonding method, in the case of a rigid PWB, a prepreg in which a resin is impregnated into a substrate such as glass cloth and the resin is cured to a semi-hardened state is prepared. It can be performed by superimposing a copper foil on a surface on the side opposite to a coating layer and a prepreg, and heating and pressing. In the case of FPC, laminated boards can be manufactured by laminating copper foils at high temperature and pressure on a substrate such as a polyimide film via an adhesive or without using an adhesive, or on a polyimide precursor Coating, drying, curing and the like are performed.
本發明之積層體可用於各種印刷配線板(PWB),並無特別限制,例如,就導體圖案之層數之觀點而言,可應用於單面PWB、雙面PWB、多層PWB(3層以上),就絕緣基板材料之種類之觀點而言,可應用於剛性PWB、軟性PWB(FPC)、軟硬複合PWB。 The laminated body of the present invention can be used in various printed wiring boards (PWB), and is not particularly limited. For example, from the viewpoint of the number of layers of the conductor pattern, it can be applied to single-sided PWB, double-sided PWB, multilayer PWB (3 or more layers) ) From the viewpoint of the type of insulating substrate material, it can be applied to rigid PWB, flexible PWB (FPC), and soft-hard composite PWB.
進而,藉由於印刷配線板搭載電子零件類,而完成印刷電路板。於本發明中,「印刷配線板」亦包括如此搭載有電子零件類之印刷配線板及印刷電路板及印刷基板。 Furthermore, the printed wiring board is completed by mounting electronic components on the printed wiring board. In the present invention, the "printed wiring board" also includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components are mounted.
又,可使用該印刷配線板製作電子機器,可使用搭載有該電子零件類之印刷電路板製作電子機器,亦可使用搭載有該電子零件類之印刷基板製作電子機器。 Further, an electronic device can be produced using the printed wiring board, an electronic device can be produced using a printed circuit board on which the electronic component is mounted, or an electronic machine can be produced using a printed circuit board on which the electronic component is mounted.
若舉出銅之一次粒子之鍍敷條件之一例,則係如下所述。 An example of the plating conditions of copper primary particles is as follows.
再者,該鍍敷條件僅表示較佳例,銅之一次粒子之形成於銅箔上之平 均粒徑擔負落粉防止之作用。因此,若平均粒徑處於本發明之範圍,則下述所示內容以外之鍍敷條件不會造成任何阻礙。本發明包含該等。 In addition, the plating conditions are merely preferred examples. The primary particles of copper are formed on the copper foil. The average particle diameter plays the role of preventing powder fall. Therefore, if the average particle diameter is within the scope of the present invention, plating conditions other than those shown below will not cause any hindrance. The present invention includes these.
液組成:銅10~20g/L、硫酸50~100g/L Liquid composition: copper 10 ~ 20g / L, sulfuric acid 50 ~ 100g / L
液溫:25~50℃ Liquid temperature: 25 ~ 50 ℃
電流密度:1~58A/dm2 Current density: 1 ~ 58A / dm 2
庫侖量:4~81As/dm2 Coulomb volume: 4 ~ 81As / dm 2
再者,與上述同樣,該鍍敷條件僅表示較佳例,二次粒子形成於一次粒子上,並且平均粒徑擔負落粉防止之作用。因此,若平均粒徑處於本發明之範圍,則下述所示內容以外之鍍敷條件不會造成任何阻礙。本發明包含該等。 In addition, similar to the above, the plating conditions are merely preferred examples, secondary particles are formed on the primary particles, and the average particle diameter is responsible for preventing powder fall. Therefore, if the average particle diameter is within the scope of the present invention, plating conditions other than those shown below will not cause any hindrance. The present invention includes these.
液組成:銅10~20g/L、鎳5~15g/L、鈷5~15g/L Liquid composition: copper 10 ~ 20g / L, nickel 5 ~ 15g / L, cobalt 5 ~ 15g / L
pH值:2~3 pH value: 2 ~ 3
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:24~50A/dm2 Current density: 24 ~ 50A / dm 2
庫侖量:34~48As/dm2 Coulomb volume: 34 ~ 48As / dm 2
本發明可於上述二次粒子層上進而形成耐熱層。將該鍍敷條件表示如下。 The present invention can further form a heat-resistant layer on the secondary particle layer. The plating conditions are shown below.
液組成:鎳5~20g/L、鈷1~8g/L Liquid composition: nickel 5 ~ 20g / L, cobalt 1 ~ 8g / L
pH值:2~3 pH value: 2 ~ 3
液溫:40~60℃ Liquid temperature: 40 ~ 60 ℃
電流密度:5~20A/dm2 Current density: 5 ~ 20A / dm 2
庫侖量:10~20As/dm2 Coulomb volume: 10 ~ 20As / dm 2
本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 The present invention can further form the following heat-resistant layer on the secondary particle layer. The plating conditions are shown below.
液組成:鎳2~30g/L、鋅2~30g/L Liquid composition: nickel 2 ~ 30g / L, zinc 2 ~ 30g / L
pH值:3~4 pH value: 3 ~ 4
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 The present invention can further form the following heat-resistant layer on the secondary particle layer. The plating conditions are shown below.
液組成:鎳2~30g/L、銅2~30g/L Liquid composition: nickel 2 ~ 30g / L, copper 2 ~ 30g / L
pH值:3~4 pH value: 3 ~ 4
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 The present invention can further form the following heat-resistant layer on the secondary particle layer. The plating conditions are shown below.
液組成:硫酸Ni六水合物:45~55g/dm3、鉬酸鈉二水合物:50~70g /dm3、檸檬酸鈉:80~100g/dm3 Liquid composition: Ni sulfate hexahydrate: 45 ~ 55g / dm 3 , sodium molybdate dihydrate: 50 ~ 70g / dm 3 , sodium citrate: 80 ~ 100g / dm 3
液溫:20~40℃ Liquid temperature: 20 ~ 40 ℃
電流密度:1~4A/dm2 Current density: 1 ~ 4A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 The present invention can further form the following heat-resistant layer on the secondary particle layer. The plating conditions are shown below.
液組成:鎳2~30g/L、錫2~30g/L Liquid composition: nickel 2 ~ 30g / L, tin 2 ~ 30g / L
pH值:1.5~4.5 pH value: 1.5 ~ 4.5
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 The present invention can further form the following heat-resistant layer on the secondary particle layer. The plating conditions are shown below.
液組成:鎳30~70g/L、磷0.2~1.2g/L Liquid composition: nickel 30 ~ 70g / L, phosphorus 0.2 ~ 1.2g / L
pH值:1.5~2.5 pH value: 1.5 ~ 2.5
液溫:30~40℃ Liquid temperature: 30 ~ 40 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表 示如下。 The present invention can further form the following heat-resistant layer on the secondary particle layer. Table of plating conditions As shown below.
液組成:鎳2~30g/L、W0.01~5g/L Liquid composition: nickel 2 ~ 30g / L, W0.01 ~ 5g / L
pH值:3~4 pH value: 3 ~ 4
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 The present invention can further form the following heat-resistant layer on the secondary particle layer. The plating conditions are shown below.
使用Ni:65~85mass%、Cr:15~35mass%之組成之濺鍍靶形成鎳鉻合金鍍層。 A nickel-chromium alloy coating is formed using a sputtering target composed of Ni: 65 to 85 mass% and Cr: 15 to 35 mass%.
靶:Ni:65~85mass%、Cr:15~35mass% Target: Ni: 65 ~ 85mass%, Cr: 15 ~ 35mass%
裝置:ULVAC股份有限公司製造之濺鍍裝置 Device: Sputtering device manufactured by ULVAC Co., Ltd.
輸出:DC50W Output: DC50W
氬氣壓力:0.2Pa Argon pressure: 0.2Pa
本發明可進而形成下述防銹層。將該鍍敷條件表示如下。下述表示浸漬鉻酸鹽處理之條件,亦可為電解鉻酸鹽處理。 The present invention can further form a rust preventive layer as described below. The plating conditions are shown below. The conditions for immersion chromate treatment are shown below, and electrolytic chromate treatment may also be used.
液組成:重鉻酸鉀1~10g/L、鋅0~5g/L Liquid composition: potassium dichromate 1 ~ 10g / L, zinc 0 ~ 5g / L
pH值:3~4 pH value: 3 ~ 4
液溫:50~60℃ Liquid temperature: 50 ~ 60 ℃
電流密度:0~2A/dm2(0A/dm2為浸漬鉻酸鹽處理之情形) Current density: 0 ~ 2A / dm 2 (0A / dm 2 is the case of immersion chromate treatment)
庫侖量:0~2As/dm2(0As/dm2為浸漬鉻酸鹽處理之情形) Coulomb amount: 0 ~ 2As / dm 2 (0As / dm 2 is the case of immersion chromate treatment)
作為一例,可列舉二胺基矽烷水溶液之塗佈。 As an example, application of an aqueous diamine silane solution is mentioned.
再者,有藉由濺鍍等乾式鍍敷設置耐熱層等金屬層、鍍層之情況,及藉由濕式鍍敷設置耐熱層等金屬層、鍍層之情況,並且有以正常鍍敷(平滑鍍敷即於未達界限電流密度之電流密度下進行鍍敷)而具有耐熱層等金屬層、鍍層之情況,該金屬層、鍍層不會對銅箔之表面之形狀造成影響。 Furthermore, there may be a case where a metal layer such as a heat-resistant layer or a plating layer is provided by dry plating such as sputtering, and a case where a metal layer or a plating layer such as a heat-resistant layer is provided by wet plating, and the normal plating (smooth plating) may be used. In the case where the coating is performed at a current density that does not reach the limit current density) and there is a metal layer or a plating layer such as a heat-resistant layer, the metal layer and the plating layer do not affect the shape of the surface of the copper foil.
界限電流密度係根據金屬濃度、pH值、給液速度、極間距離、鍍敷液溫度而變化,於本發明中,將正常鍍敷(經鍍敷之金屬析出為層狀之狀態)與粗化鍍敷(燒鍍,經鍍敷之金屬析出為結晶狀(球狀或針狀或樹掛狀等)之狀態,存在凹凸)之交界之電流密度定義為界限電流密度,將利用霍爾槽試驗成為正常鍍敷之界限(即將成為燒鍍前)之電流密度(目視判斷)設為界限電流密度。 The limiting current density is changed according to the metal concentration, pH value, feeding speed, distance between electrodes, and temperature of the plating solution. In the present invention, the normal plating (the state where the plated metal is deposited in a layered state) and the coarse The current density at the boundary of electroless plating (sintering, precipitation of the plated metal into a crystalline state (spherical or needle-like or tree-like shape, with unevenness)) is defined as the limiting current density, and a Hall groove test is used The current density (visual judgment), which is the limit of normal plating (before the step of baking), is set as the limit current density.
具體而言,將金屬濃度、pH值、鍍敷液溫度設定為鍍敷之製造條件,進行霍爾槽試驗。然後,調查於該鍍敷液組成、鍍敷液溫度之金屬層形成狀態(經鍍敷之金屬析出為層狀或形成為結晶狀)。然後,基於山本鍍金試驗器股份有限公司製造之電流密度一覽表,根據試片之正常鍍敷與粗化鍍敷之交界所存在之部位之試片位置,求出該交界之位置之電流密度。並且,將該交界之位置之電流密度規定為界限電流密度。藉此,可知於該鍍敷液組成、鍍敷液溫度之界限電流密度。通常,若極間距離較短,則有界限電流密度變高之傾向。 Specifically, the metal concentration, the pH value, and the temperature of the plating solution were set to the manufacturing conditions for plating, and a Hall groove test was performed. Then, the state of the formation of the metal layer (the plated metal was deposited in a layered or crystalline state) at the composition and temperature of the plating solution was investigated. Then, based on the current density list manufactured by Yamamoto Gold Plating Tester Co., Ltd., the current density at the position of the interface was obtained based on the position of the test piece at the interface between the normal plating and rough plating of the test piece. The current density at the boundary is defined as the limit current density. From this, the limiting current density of the composition of the plating solution and the temperature of the plating solution can be known. Generally, if the inter-electrode distance is short, the limiting current density tends to be high.
霍爾槽試驗之方法例如記載於「鍍敷實務讀本」丸山清著,日刊工業 報社1983年6月30日之157頁至160頁中。 The method of Hall groove test is described in "Plating Practice Reader" by Kiyoshi Maruyama, Nikkan Kogyo The newspaper was on pages 157 to 160 of June 30, 1983.
再者,為了以未達界限電流密度進行鍍敷處理,因此較佳為將鍍敷處理時之電流密度設為20A/dm2以下,更佳為設為10A/dm2以下,進而較佳為設為8A/dm2以下。 In addition, in order to perform the plating treatment at a current density that has not reached the limit, the current density during the plating treatment is preferably set to 20 A / dm 2 or less, more preferably to 10 A / dm 2 or less, and even more preferably It is set to 8 A / dm 2 or less.
又,鉻酸鹽層、矽烷偶合層之厚度極薄,因此不會對銅箔之表面之形狀造成影響。 In addition, the thickness of the chromate layer and the silane coupling layer is extremely thin, so it does not affect the shape of the surface of the copper foil.
作為上述二次粒子之銅-鈷-鎳合金鍍敷可藉由電解鍍敷而形成附著量為10~30mg/dm2銅-100~3000μg/dm2鈷-50~500μg/dm2鎳之三元系合金層。 The copper-cobalt-nickel alloy plating as the above secondary particles can be formed by electrolytic plating with an adhesion amount of 10 ~ 30mg / dm 2 copper-100 ~ 3000μg / dm 2 cobalt-50 ~ 500μg / dm 2 nickel. Element system alloy layer.
若Co附著量未達100μg/dm2,則耐熱性變差,又,蝕刻性亦變差。若Co附著量超過3000μg/dm2,則於必須考慮磁性之影響方面欠佳,產生蝕刻斑,又,可認為耐酸性及耐化學品性惡化。 When the Co adhesion amount is less than 100 μg / dm 2 , the heat resistance is deteriorated, and the etchability is also deteriorated. If the Co adhesion amount exceeds 3000 μg / dm 2 , it is not good in terms of the influence of magnetic properties, and etch spots will be generated. In addition, acid resistance and chemical resistance may be deteriorated.
若Ni附著量未達50μg/dm2,則耐熱性變差。另一方面,若Ni附著量超過500μg/dm2,則蝕刻性降低。即,雖並非存在蝕刻殘渣又無法蝕刻之等級,但難以進行微細圖案化。較佳之Co附著量為500~2000μg/dm2,並且,較佳之鎳附著量為50~300μg/dm2。 When the Ni adhesion amount is less than 50 μg / dm 2 , the heat resistance is deteriorated. On the other hand, if the Ni adhesion amount exceeds 500 μg / dm 2 , the etching properties are reduced. That is, although it is not a grade where etching residue exists and cannot be etched, it is difficult to perform fine patterning. A preferable Co adhesion amount is 500 to 2000 μg / dm 2 , and a preferable nickel adhesion amount is 50 to 300 μg / dm 2 .
根據以上,銅-鈷-鎳合金鍍敷之附著量可謂理想為10~30mg/dm2銅-100~3000μg/dm2鈷-50~500μg/dm2鎳。該三元系合金層之各附著量僅為理想之條件,並非否定超過該量之範圍。 According to the above, copper - cobalt - nickel alloy plating can be described over the plating deposition amount is 10 ~ 30mg / dm 2 of copper -100 ~ 3000μg / dm 2 of cobalt -50 ~ 500μg / dm 2 of nickel. Each adhesion amount of the ternary alloy layer is only an ideal condition, and does not negate the range exceeding the amount.
此處,所謂蝕刻斑,係意指於以氯化銅進行蝕刻之情形時Co未溶解而殘存之情況,並且,所謂蝕刻殘渣,係意指於以氯化銨進行鹼蝕刻之情形時Ni未溶解而殘存之情況。 Here, the term "etching spot" refers to a case where Co remains undissolved when etching with copper chloride, and the term "etching residue" means that Ni does not Dissolved and remaining.
通常,於形成電路之情形時,使用下述實施例中說明之鹼蝕刻液及氯化銅系蝕刻液而進行。該蝕刻液及蝕刻條件具有通用性,但並不限定於該條件,應理解可任意地選擇。 Generally, when forming a circuit, it is performed using the alkali etchant and copper chloride-based etchant described in the following Examples. The etchant and the etching conditions are versatile, but are not limited to these conditions, and it should be understood that they can be arbitrarily selected.
本發明係如上所述,可於形成二次粒子後(粗化處理後),於粗化面上形成鈷-鎳合金鍍層。 As described above, the present invention can form a cobalt-nickel alloy plating layer on the roughened surface after the formation of the secondary particles (after the roughening treatment).
該鈷-鎳合金鍍層理想為鈷之附著量為200~3000μg/dm2,且鈷之比率為60~66質量%。該處理於廣義上可視為一種防銹處理。 The cobalt-nickel alloy plating layer preferably has an adhesion amount of cobalt of 200 to 3000 μg / dm 2 and a cobalt ratio of 60 to 66% by mass. This treatment can be regarded as a kind of antirust treatment in a broad sense.
該鈷-鎳合金鍍層必須於實質性地不使銅箔與基板之接著強度降低之程度下進行。若鈷附著量未達200μg/dm2,則耐熱剝離強度降低,耐氧化性及耐化學品性變差,又,處理表面泛紅,故而欠佳。 The cobalt-nickel alloy plating must be performed to such an extent that the bonding strength between the copper foil and the substrate is not substantially reduced. If the cobalt adhesion amount is less than 200 μg / dm 2 , the heat-resistant peeling strength is reduced, the oxidation resistance and chemical resistance are deteriorated, and the treated surface is reddish, which is not good.
又,若鈷附著量超過3000μg/dm2,則有必須考慮磁性之影響之情況,故而欠佳,並產生蝕刻斑,又,認為耐酸性及耐化學品性惡化。較佳之鈷附著量為400~2500μg/dm2。 In addition, if the cobalt adhesion amount exceeds 3000 μg / dm 2 , it may be necessary to consider the influence of magnetism, so it is not good, and etched spots are generated, and acid resistance and chemical resistance are considered to be deteriorated. A preferable cobalt adhesion amount is 400 to 2500 μg / dm 2 .
又,若鈷附著量多,則有成為產生軟蝕刻之滲入之原因之情況。因此,可謂理想為將鈷之比率設為60~66質量%。 In addition, if the cobalt adhesion amount is large, it may cause the infiltration of soft etching. Therefore, it is desirable to set the ratio of cobalt to 60 to 66% by mass.
如下所述,產生軟蝕刻之滲入之直接且較大之原因係由鋅-鎳合金鍍層構成之耐熱防銹層,但亦存在鈷亦成為產生軟蝕刻時滲入之原因之情況,因此更理想之條件係如上述般進行調整。 As described below, the direct and large cause of the soft etching infiltration is a heat-resistant rust-proof layer composed of a zinc-nickel alloy plating layer, but there are also cases where cobalt also causes the infiltration during soft etching, so it is more desirable. The conditions are adjusted as described above.
另一方面,於鎳附著量少之情形時,耐熱剝離強度降低,耐氧化性及耐化學品性降低。又,於鎳附著量過多之情形時,鹼蝕刻性變差,因此理想為以與上述鈷含量之平衡而決定。 On the other hand, when the amount of nickel adhered is small, the heat-resistant peel strength is reduced, and the oxidation resistance and chemical resistance are reduced. In addition, when the amount of nickel adhered is too large, alkali etchability is deteriorated, so it is preferably determined in a balance with the above-mentioned cobalt content.
本發明可於鈷-鎳合金鍍敷上進而形成鋅-鎳合金鍍層。將 鋅-鎳合金鍍層之總量設為150~500μg/dm2,且將鎳之比率設為16~40質量%。其具有耐熱防銹層之作用。該條件亦僅為較佳之條件,可使用其他公知之鋅-鎳合金鍍敷。於本發明中,該鋅-鎳合金鍍敷可理解為較佳之附加條件。 The invention can form a zinc-nickel alloy plating layer on the cobalt-nickel alloy plating. The total amount of the zinc-nickel alloy plating layer is set to 150 to 500 μg / dm 2 , and the ratio of nickel is set to 16 to 40% by mass. It has the function of heat-resistant rust-proof layer. This condition is also only a preferable condition, and other known zinc-nickel alloy plating can be used. In the present invention, the zinc-nickel alloy plating can be understood as a preferable additional condition.
電路之製造步驟中進行之處理成為更高溫,又,於製成製品後,使用機器時會產生熱。例如,於以熱壓接將銅箔接合於樹脂即所謂二層材中,於接合時會受到300℃以上之熱。於此種狀況之中,必須防止銅箔與樹脂基材之間之接合力之降低,該鋅-鎳合金鍍敷較為有效。 The processing performed in the manufacturing steps of the circuit becomes higher temperature, and after the product is manufactured, heat is generated when the machine is used. For example, when a copper foil is bonded to a resin, a so-called two-layer material by thermocompression bonding, heat of 300 ° C. or higher is applied during bonding. In such a situation, it is necessary to prevent a decrease in the bonding force between the copper foil and the resin substrate, and this zinc-nickel alloy plating is effective.
又,於習知之技術中,以熱壓接將銅箔接合於樹脂而成之二層材中的具備鋅-鎳合金鍍層之微小電路係於軟蝕刻時,在電路之邊緣部產生由滲入引起之變色。鎳具有抑制於軟蝕刻時使用之蝕刻劑(H2SO4:10wt%、H2O2:2wt%之蝕刻水溶液)之滲入的效果。 Also, in the conventional technique, a microcircuit having a zinc-nickel alloy plating layer in a two-layer material formed by bonding a copper foil to a resin by thermocompression bonding is caused by infiltration at the edge portion of the circuit during soft etching. Its discoloration. Nickel has the effect of suppressing the penetration of an etchant (H 2 SO 4 : 10 wt%, H 2 O 2 : 2 wt% etching aqueous solution) used in soft etching.
如上所述,於將上述鋅-鎳合金鍍層之總量設為150~500μg/dm2,並且將該合金層中之鎳比率之下限值設為16質量%、將上限值設為40質量%,且將鎳之含量設為50μg/dm2以上時,具有如下效果:具備耐熱防銹層之作用,並且抑制於軟蝕刻時使用之蝕刻劑之滲入,可防止因腐蝕使電路之接合強度之弱化。 As described above, the total amount of the zinc-nickel alloy plating layer is set to 150 to 500 μg / dm 2 , the lower limit value of the nickel ratio in the alloy layer is set to 16% by mass, and the upper limit value is set to 40. When the mass content is 50% and the nickel content is 50 μg / dm 2 or more, it has the following effects: it has the function of a heat-resistant rust-proof layer, and suppresses the penetration of the etchant used during soft etching, and can prevent the circuit from joining due to corrosion Weakness of intensity.
再者,若鋅-鎳合金鍍層之總量未達150μg/dm2,則耐熱防銹力降低,難以擔負作為耐熱防銹層之作用,若相同之總量超過500μg/dm2,則有耐鹽酸性變差之傾向。 In addition, if the total amount of zinc-nickel alloy plating is less than 150 μg / dm 2 , the heat resistance and rust resistance are reduced, and it is difficult to bear the role of a heat resistant rust prevention layer. If the same total amount exceeds 500 μg / dm 2 , the resistance is The tendency of hydrochloric acid to deteriorate.
又,若合金層中之鎳比率之下限值未達16質量%,則軟蝕刻時之滲入量超過9μm,故而欠佳。鎳比率之上限值40質量%係可形成鋅-鎳合金鍍 層之技術上之界限值。 In addition, if the lower limit value of the nickel ratio in the alloy layer is less than 16% by mass, the penetration amount during soft etching exceeds 9 μm, which is unfavorable. The upper limit of the nickel ratio is 40% by mass because zinc-nickel alloy plating can be formed The technical limit of the layer.
如上所述,本發明可於作為二次粒子層之銅-鈷-鎳合金鍍層上,視需要依序形成鈷-鎳合金鍍層、進而鋅-鎳合金鍍層。亦可調節該等層中之合計量之鈷附著量及鎳附著量。理想為將鈷之合計附著量設為300~4000μg/dm2,將鎳之合計附著量設為100~1500μg/dm2。 As described above, the present invention can sequentially form a cobalt-nickel alloy plating layer and a zinc-nickel alloy plating layer on the copper-cobalt-nickel alloy plating layer as the secondary particle layer as needed. The total amount of cobalt and nickel in these layers can also be adjusted. It is desirable to set the total adhesion amount of cobalt to 300 to 4000 μg / dm 2 and the total adhesion amount of nickel to 100 to 1500 μg / dm 2 .
若鈷之合計附著量未達300μg/dm2,則耐熱性及耐化學品性降低,若鈷之合計附著量超過4000μg/dm2,則有產生蝕刻斑之情況,又,有傳輸損耗變大之情況。又,若鎳之合計附著量未達100μg/dm2,則有耐熱性及耐化學品性降低之情況。若鎳之合計附著量超過1500μg/dm2,則有產生蝕刻殘渣之情況,又,有傳輸損耗變大之情況。 If the total adhesion amount of cobalt does not reach 300 μg / dm 2 , the heat resistance and chemical resistance will decrease. If the total adhesion amount of cobalt exceeds 4000 μg / dm 2 , etching spots may occur, and transmission loss may increase. Situation. In addition, if the total adhesion amount of nickel is less than 100 μg / dm 2 , heat resistance and chemical resistance may be reduced. If the total adhesion amount of nickel exceeds 1500 μg / dm 2 , etching residues may be generated, and transmission loss may be increased.
鈷之合計附著量較佳為300~3500μg/dm2,更佳為300~3000μg/dm2,進而較佳為300~2500μg/dm2,進而更佳為300~2000μg/dm2,鎳之合計附著量較佳為100~1000μg/dm2,更佳為100~900μg/dm2。若滿足上述條件,則無需特別受限於該段落中記載之條件。 The total deposited mass of cobalt is preferably 300 ~ 3500μg / dm 2, more preferably 300 ~ 3000μg / dm 2, and further preferably 300 ~ 2500μg / dm 2, and further more preferably 300 ~ 2000μg / dm 2, the total nickel The adhesion amount is preferably 100 to 1000 μg / dm 2 , and more preferably 100 to 900 μg / dm 2 . If the above conditions are satisfied, there is no particular limitation on the conditions described in this paragraph.
其後,視需要實施防銹處理。本發明中較佳之防銹處理係鉻氧化物單獨之皮膜處理或鉻氧化物與鋅/鋅氧化物之混合物皮膜處理。所謂鉻氧化物與鋅/鋅氧化物之混合物皮膜處理,係指使用含有鋅鹽或氧化鋅與鉻酸鹽之鍍浴,藉由電鍍被覆由鋅或氧化鋅與鉻氧化物構成之鋅-鉻基混合物之防銹層的處理。 Thereafter, an anti-rust treatment is performed as necessary. The preferred antirust treatment in the present invention is a coating treatment of chromium oxide alone or a coating treatment of a mixture of chromium oxide and zinc / zinc oxide. The so-called chromium oxide and zinc / zinc oxide mixture coating treatment refers to using a plating bath containing zinc salt or zinc oxide and chromate to coat zinc-chromium composed of zinc or zinc oxide and chromium oxide by electroplating Treatment of rust-proof layer of base mixture.
作為鍍浴,代表性地使用K2Cr2O7、Na2Cr2O7等重鉻酸鹽或CrO3等之至少一種、水溶性鋅鹽例如ZnO、ZnSO4-7H2O等至少一種、與氫氧化鹼(alkali hydroxide)之混合水溶液。代表之鍍浴組成與電解條件例係如下所述。 As the plating bath, at least one of dichromates such as K 2 Cr 2 O 7 and Na 2 Cr 2 O 7 or CrO 3 and the like, and at least one of water-soluble zinc salts such as ZnO and ZnSO 4 -7H 2 O are typically used. A mixed aqueous solution with alkali hydroxide. Examples of typical plating bath compositions and electrolytic conditions are as follows.
如此獲得之銅箔具有優異之耐熱性剝離強度、耐氧化性及耐鹽酸性。又,可利用CuCl2蝕刻液對150μm間距電路寬度以下之電路進行蝕刻,而且亦可設為鹼蝕刻。又,可抑制於軟蝕刻時向電路邊緣部滲入。 The copper foil thus obtained has excellent heat-resistant peel strength, oxidation resistance, and hydrochloric acid resistance. In addition, a circuit having a pitch width of 150 μm or less can be etched by using a CuCl 2 etching solution, and can also be set to alkali etching. In addition, infiltration into the circuit edge portion during soft etching can be suppressed.
軟蝕刻液可使用H2SO4:10wt%、H2O2:2wt%之水溶液。處理時間與溫度可任意調節。 As the soft etching solution, an aqueous solution of H 2 SO 4 : 10 wt% and H 2 O 2 : 2 wt% can be used. Processing time and temperature can be adjusted arbitrarily.
作為鹼蝕刻液,例如已知有NH4OH:6莫耳/升、NH4Cl:5莫耳/升、CuCl2:2莫耳/升(溫度50℃)等液。 As the alkali etching solution, for example, liquids such as NH 4 OH: 6 mol / liter, NH 4 Cl: 5 mol / liter, and CuCl 2 : 2 mol / liter (temperature: 50 ° C.) are known.
上述全部步驟中獲得之銅箔具有黑色~灰色。黑色~灰色於對位精度及熱吸收率高之方面較有意義。例如,包含剛性基板及軟性基板之電路基板係以自動步驟搭載IC或電阻、電容器等零件,此時,一面利用感測器讀取電路一面進行晶片安裝。此時,有通過Kapton等膜進行銅箔處理面之對位之情況。又,通孔形成時之定位亦同樣。 The copper foil obtained in all the above steps has black to gray. Black to gray are more significant in terms of alignment accuracy and high heat absorption. For example, a circuit board including a rigid substrate and a flexible substrate is mounted with ICs, resistors, capacitors, and other components in automatic steps. At this time, the chip is mounted while reading the circuit with a sensor. At this time, the copper foil-treated surface may be aligned with a film such as Kapton. The positioning is also the same when the through hole is formed.
處理面越接近黑色,光之吸收越良好,因此定位之精度提高。進而,於製作基板時,多數情況下一面對銅箔與膜施加熱一面進行固化而接著。此時,於藉由使用遠紅外線、紅外線等長波段進行加熱之情形時,處理面之色調較黑者之加熱效率良好。 The closer the processing surface is to black, the better the absorption of light, so the positioning accuracy improves. Furthermore, when a substrate is produced, in many cases, it is cured while applying heat to the copper foil and the film, and then it is cured. At this time, in the case of heating by using a long-wavelength band such as far-infrared rays or infrared rays, the processing surface has a better heating efficiency than a black one.
最後,視需要以改善銅箔與樹脂基板之接著力為主要目的,實施於防銹層上之至少粗化面塗佈矽烷偶合劑之矽烷處理。作為該矽烷處理中使用之矽烷偶合劑,可列舉:烯烴系矽烷、環氧系矽烷、丙烯酸系矽烷、胺基系矽烷、巰基系矽烷,可適當選擇該等而使用。再者,於使用液晶聚合物作為樹脂之情形時,較佳為使用胺基系矽烷(具有胺基之矽烷)作為矽烷偶合劑。又,更佳為使用二胺基矽烷作為矽烷偶合劑。 Finally, if necessary, with the main purpose of improving the adhesion between the copper foil and the resin substrate, a silane treatment with a silane coupling agent coated on at least the roughened surface of the rust preventive layer is performed. Examples of the silane coupling agent used in the silane treatment include olefin-based silanes, epoxy-based silanes, acrylic-based silanes, amino-based silanes, and mercapto-based silanes, and these can be appropriately selected and used. When a liquid crystal polymer is used as the resin, it is preferable to use an amine-based silane (a silane having an amine group) as the silane coupling agent. It is more preferable to use a diamine silane as the silane coupling agent.
塗佈方法可為利用矽烷偶合劑溶液之噴霧之吹附、利用塗佈機之塗佈、浸漬、流延等之任一種。例如,日本特公昭60-15654號中記載有藉由於銅箔之粗面側實施鉻酸鹽處理後進行矽烷偶合劑處理,而改善銅箔與樹脂基板之接著力。詳細內容請參照此。其後,如有需要,亦有為了改善銅箔之延展性而實施退火處理之情況。 The coating method may be any one of spray coating using a silane coupling agent solution, coating using a coating machine, dipping, casting, and the like. For example, Japanese Patent Publication No. 60-15654 describes that the adhesion between a copper foil and a resin substrate is improved by performing a silane coupling agent treatment after performing a chromate treatment on the rough side of the copper foil. For details, please refer to this. Thereafter, if necessary, annealing treatment may be performed in order to improve the ductility of the copper foil.
本發明之另一實施之形態之附載體銅箔係於載體之一面或雙面依序具有中間層、極薄銅層。並且,上述極薄銅層為上述本發明之一實施之形態之高頻電路用銅箔。 The copper foil with a carrier according to another embodiment of the present invention has an intermediate layer and an ultra-thin copper layer in this order on one side or both sides of the carrier. The ultra-thin copper layer is a copper foil for a high-frequency circuit according to an embodiment of the present invention.
可於本發明中使用之載體典型為金屬箔或樹脂膜,例如可以銅箔、銅合金箔、鎳箔、鎳合金箔、鐵箔、鐵合金箔、不鏽鋼箔、鋁箔、鋁合金箔、絕緣樹脂膜(例如聚醯亞胺膜、液晶聚合物(LCP)膜、聚對苯二甲酸乙二酯(PET)膜、聚醯胺膜、聚酯膜、氟樹脂膜等)之形態提供。 The carrier that can be used in the present invention is typically a metal foil or a resin film, for example, copper foil, copper alloy foil, nickel foil, nickel alloy foil, iron foil, iron alloy foil, stainless steel foil, aluminum foil, aluminum alloy foil, insulating resin film (For example, a polyimide film, a liquid crystal polymer (LCP) film, a polyethylene terephthalate (PET) film, a polyimide film, a polyester film, a fluororesin film, etc.) are provided.
作為可於本發明中使用之載體,較佳為使用銅箔。由於銅箔之導電率較高,故而容易形成其後之中間層、極薄銅層。典型而言,載體係以壓延銅箔或電解銅箔之形態提供。通常,電解銅箔係於鈦或不鏽鋼之轉筒上將銅自硫酸銅鍍浴電解析出而製造,壓延銅箔係重複進行利用壓延輥之塑性加工及熱處理而製造。作為銅箔之材料,除了精銅或無氧銅等高純度銅以外,亦可使用例如摻Sn銅、摻Ag銅、添加有Cr、Zr或Mg等之銅合金、添加有Ni及Si等之卡遜系銅合金之類的銅合金。 As a carrier usable in the present invention, copper foil is preferably used. Due to the high electrical conductivity of copper foil, it is easy to form subsequent intermediate layers and extremely thin copper layers. Typically, the carrier is provided in the form of a rolled copper foil or an electrolytic copper foil. Generally, electrolytic copper foil is produced by electrolyzing copper from a copper sulfate plating bath on a titanium or stainless steel drum, and rolled copper foil is produced by repeating plastic processing and heat treatment using a calender roll. As the material of the copper foil, in addition to high-purity copper such as fine copper or oxygen-free copper, for example, Sn-doped copper, Ag-doped copper, copper alloys to which Cr, Zr, or Mg is added, and Ni and Si to which it is added can be used. Carson is a copper alloy such as a copper alloy.
可於本發明中使用之載體之厚度亦無特別限制,只要發揮作 為載體之作用並且適當調節為適合之厚度即可,例如可設為5μm以上。但是,若過厚,則生產成本提高,因此通常較佳為設為35μm以下。因此,載體之厚度典型為12~70μm,更典型為18~35μm。 The thickness of the carrier that can be used in the present invention is not particularly limited as long as it functions as The thickness of the carrier may be appropriately adjusted for the function of the carrier, and may be, for example, 5 μm or more. However, if it is too thick, the production cost increases, and therefore, it is usually preferably 35 μm or less. Therefore, the thickness of the carrier is typically 12 to 70 μm, and more typically 18 to 35 μm.
再者,亦可於與設置載體之極薄銅層側之表面相反之側的表面設置粗化處理層。可使用公知之方法設置該粗化處理層,亦可藉由上述粗化處理設置。於與設置載體之極薄銅層側之表面相反之側的表面設置粗化處理層之情況具有如下優點:將載體自具有該粗化處理層之表面側積層於樹脂基板等支撐體時,載體與樹脂基板不易剝離。 Furthermore, a roughening treatment layer may be provided on the surface on the side opposite to the surface on the side where the ultra-thin copper layer of the carrier is provided. This roughening treatment layer can be set using a known method, and can also be set by the above roughening treatment. When the roughening treatment layer is provided on the surface opposite to the surface on which the ultra-thin copper layer side of the carrier is provided, there is an advantage that when the carrier is laminated on a support such as a resin substrate from the surface side having the roughening treatment layer, the carrier It is not easy to peel from the resin substrate.
於載體上設置中間層。亦可於載體與中間層之間設置其他層。本發明中使用之中間層只要為如下構成則並無特別限定:於附載體銅箔向絕緣基板積層之步驟前極薄銅層不易自載體剝離,另一方面,於向絕緣基板之積層之步驟後極薄銅層可自載體剝離。例如,本發明之附載體銅箔之中間層亦可含有選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn、該等之合金、該等之水合物、該等之氧化物、有機物所組成之群一種或二種以上。又,中間層亦可為複數層。 An intermediate layer is provided on the carrier. Other layers may be provided between the carrier and the intermediate layer. The intermediate layer used in the present invention is not particularly limited as long as it has the following structure: before the step of laminating the copper foil with a carrier onto the insulating substrate, the extremely thin copper layer is not easy to peel off from the carrier; on the other hand, in the step of laminating the insulating substrate The rear extremely thin copper layer can be peeled from the carrier. For example, the intermediate layer of the copper foil with a carrier of the present invention may also contain a material selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, these alloys, these hydrates, One or two or more groups of these oxides and organic substances. The intermediate layer may be a plurality of layers.
又,例如,中間層可藉由如下方式構成:自載體側形成由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種元素構成的單一金屬層,或者由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種或二種以上之元素構成的合金層,於其上形成由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種或二種以上之元素之水合物或氧化物或有機物構成的層,或者由選自由Cr、Ni、Co、 Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種之元素構成的單一金屬層,或者由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種或二種以上之元素構成的合金層。 In addition, for example, the intermediate layer may be constituted by forming a unit composed of one element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn from the carrier side. A metal layer, or an alloy layer composed of one or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn, on which an optional layer is formed. A layer composed of one or more hydrates, oxides, or organics of an element group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn, or a layer selected from the group consisting of Cr , Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn A single metal layer composed of one element, or a single metal layer selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, An alloy layer composed of one or two or more types of element group consisting of Al and Zn.
於僅於單面設置中間層之情形時,較佳為於與載體相反之面設置Ni鍍層等防銹層。再者,於利用鉻酸鹽處理或鋅鉻酸鹽處理或鍍敷處理設置中間層之情形時,可認為有鉻或鋅等附著之金屬之一部分成為水合物或氧化物之情形。 When an intermediate layer is provided only on one side, it is preferable to provide a rust preventive layer such as a Ni plating layer on the opposite side of the carrier. When an intermediate layer is provided by a chromate treatment, a zinc chromate treatment, or a plating treatment, it may be considered that a part of the attached metal such as chromium or zinc becomes a hydrate or an oxide.
又,例如,中間層可於載體上依序積層鎳、鎳-磷合金或鎳-鈷合金、以及鉻而構成。鎳與銅之接著力高於鉻與銅之接著力,因此於剝離極薄銅層時,於極薄銅層與鉻之界面剝離。又,對中間層之鎳期待防止銅成分自載體擴散至極薄銅層之障壁效果。中間層中之鎳之附著量較佳為100μg/dm2以上40000μg/dm2以下,更佳為100μg/dm2以上4000μg/dm2以下,進而較佳為100μg/dm2以上2500μg/dm2以下,進而更佳為100μg/dm2以上且未達1000μg/dm2,中間層中之鉻之附著量較佳為5μg/dm2以上100μg/dm2以下。 In addition, for example, the intermediate layer may be formed by sequentially stacking nickel, a nickel-phosphorus alloy, a nickel-cobalt alloy, and chromium on a carrier. The adhesion force between nickel and copper is higher than the adhesion force between chromium and copper. Therefore, when the ultra-thin copper layer is peeled off, it is peeled off at the interface between the ultra-thin copper layer and chromium. In addition, a barrier effect of preventing the copper component from diffusing from the carrier to the extremely thin copper layer is expected for the nickel in the intermediate layer. Adhesion amount of the intermediate layer of nickel, preferably 100μg / dm 2 or more 40000μg / dm 2 or less, more preferably 100μg / dm 2 or more 4000μg / dm 2 or less, and further preferably 100μg / dm 2 or more 2500μg / dm 2 or less It is more preferably 100 μg / dm 2 or more and less than 1000 μg / dm 2 , and the chromium adhesion amount in the intermediate layer is preferably 5 μg / dm 2 or more and 100 μg / dm 2 or less.
於中間層上設置極薄銅層。亦可於中間層與極薄銅層之間設置其他層。極薄銅層可藉由利用硫酸銅、焦磷酸銅、胺基磺酸銅、氰化銅等之電解浴之電鍍而形成,就以通常之電解銅箔之形式使用,以高電流密度可形成銅箔之方面而言,較佳為硫酸銅浴。極薄銅層之厚度並無特別限制,通常薄於載體例如為12μm以下。典型為0.5~12μm,更典型為1~5μm,進而典型為1.5~5μm,進而典型為2~5μm。再者,亦可於載體之雙面設 置極薄銅層。 An extremely thin copper layer is provided on the intermediate layer. Other layers may be provided between the intermediate layer and the ultra-thin copper layer. The ultra-thin copper layer can be formed by electroplating with electrolytic baths such as copper sulfate, copper pyrophosphate, copper sulfamate, copper cyanide, etc., and it can be used in the form of ordinary electrolytic copper foil, which can be formed at high current density. In terms of copper foil, a copper sulfate bath is preferred. The thickness of the ultra-thin copper layer is not particularly limited, and is generally thinner than the carrier, for example, 12 μm or less. It is typically 0.5 to 12 μm, more typically 1 to 5 μm, further typically 1.5 to 5 μm, and further typically 2 to 5 μm. Furthermore, it can be set on both sides of the carrier. Place a very thin copper layer.
如此製造具備載體、積層於載體上之中間層、積層於中間層上之極薄銅層的附載體銅箔。關於附載體銅箔本身之使用方法為業者所周知,例如可將極薄銅層之表面貼合於紙基材酚系樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布/紙複合基材環氧樹脂、玻璃布/玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂、聚酯膜、聚醯亞胺膜等絕緣基板上並進行熱壓接後,剝離載體製成覆銅積層板,將接著於絕緣基板之極薄銅層蝕刻成目標導體圖案,最終可製造印刷配線板。 In this way, a copper foil with a carrier including a carrier, an intermediate layer laminated on the carrier, and an ultra-thin copper layer laminated on the intermediate layer was manufactured. The method of using the copper foil with a carrier itself is well known to the industry. For example, the surface of an ultra-thin copper layer can be bonded to a paper substrate phenol resin, a paper substrate epoxy resin, a synthetic fiber cloth substrate epoxy resin, and glass. Cloth / paper composite substrate epoxy resin, glass cloth / glass non-woven fabric composite substrate epoxy resin, glass cloth substrate epoxy resin, polyester film, polyimide film and other insulating substrates The carrier is peeled to make a copper-clad laminated board, and the ultra-thin copper layer on the insulating substrate is etched into a target conductor pattern, and finally a printed wiring board can be manufactured.
又,具備載體、積層於載體上之中間層、與積層於中間層上之極薄銅層的附載體銅箔可於上述極薄銅層上具備粗化處理層,於上述粗化處理層上具備一種以上之選自由耐熱層、防銹層、鉻酸鹽(處理)層及矽烷偶合(處理)層組成之群之層。 Moreover, the copper foil with a carrier provided with a carrier, an intermediate layer laminated on the carrier, and an ultra-thin copper layer laminated on the intermediate layer may be provided with a roughening treatment layer on the ultra-thin copper layer, and on the roughening treatment layer. One or more layers selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate (treatment) layer, and a silane coupling (treatment) layer.
亦可於本發明之高頻電路用銅箔(亦包含高頻電路用銅箔為附載體銅箔之極薄銅層之情形)之二次粒子層之表面形成樹脂層。又,樹脂層可形成於分別形成在高頻電路用銅箔之二次粒子層上的由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層之表面,可形成於鉻酸鹽層之表面,可形成於矽烷偶合層之表面,亦可形成於Ni-Zn合金層之表面。又,樹脂層更佳為形成於高頻電路用銅箔之最表面。又,上述附載體銅箔亦可於上述粗化處理層上、或者上述耐熱層、防銹層、或鉻酸鹽(處理)層、或矽烷偶合(處理)層上具備樹脂層。上述樹脂層亦可為絕緣樹脂層。 A resin layer may also be formed on the surface of the secondary particle layer of the copper foil for high-frequency circuits of the present invention (including the case where the copper foil for high-frequency circuits is an ultra-thin copper layer with a carrier copper foil). In addition, the resin layer may be formed on the secondary particle layer of the copper foil for high-frequency circuits, each made of Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, The surface of the alloy layer composed of more than one element of the group consisting of As and Ti may be formed on the surface of the chromate layer, the surface of the silane coupling layer, or the surface of the Ni-Zn alloy layer. The resin layer is more preferably formed on the outermost surface of the copper foil for high-frequency circuits. Moreover, the said copper foil with a carrier may be provided with the resin layer on the said roughening process layer, or the said heat-resistant layer, a rust prevention layer, a chromate (treatment) layer, or a silane coupling (treatment) layer. The resin layer may be an insulating resin layer.
上述樹脂層可為接著劑,亦可為接著用半硬化狀態(B階段狀態)之絕緣樹脂層。半硬化狀態(B階段狀態)包括如下狀態:即便用手指觸摸其表面亦無黏著感,可將該絕緣樹脂層重疊而保管,若進而進行加熱處理,則會引起硬化反應。 The resin layer may be an adhesive or an insulating resin layer in a semi-hardened state (B-stage state). The semi-hardened state (B-stage state) includes a state in which there is no stickiness even if the surface is touched with a finger, and the insulating resin layer can be stacked and stored, and further heat treatment will cause a hardening reaction.
又,上述樹脂層可含有熱硬化性樹脂,亦可為熱塑性樹脂。又,上述樹脂層亦可含有熱塑性樹脂。其種類並無特別限定,作為較佳者,例如可列舉包括環氧樹脂、聚醯亞胺樹脂、多官能性氰酸酯化合物、順丁烯二醯亞胺化合物、聚乙烯醇縮乙醛樹脂、胺酯樹脂等之樹脂。 The resin layer may contain a thermosetting resin or a thermoplastic resin. The resin layer may contain a thermoplastic resin. The type is not particularly limited, and preferred examples include epoxy resins, polyimide resins, polyfunctional cyanate compounds, maleimide compounds, and polyvinyl acetal resins. , Amine ester resin, etc.
上述樹脂層可含有公知之樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體(可使用含有無機化合物及/或有機化合物之介電體、含有金屬氧化物之介電體等任一種介電體)、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等。又,上述樹脂層例如可使用如下文獻中記載之物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等)及/或樹脂層之形成方法、形成裝置而形成:國際公開編號WO2008/004399、國際公開編號WO2008/053878、國際公開編號WO2009/084533、日本特開平11-5828號、日本特開平11-140281號、日本專利第3184485號、國際公開編號WO97/02728、日本專利第3676375號、日本特開2000-43188號、日本專利第3612594號、日本特開2002-179772號、日本特開2002-359444號、日本特開2003-304068號、日本專利第3992225號、日本特開2003-249739號、日本專利第4136509號、日本特開2004-82687號、日本專利第4025177號、日本特開2004-349654號、日本專利第4286060號、日本特開2005-262506號、日本專利第4570070 號、日本特開2005-53218號、日本專利第3949676號、日本專利第4178415號、國際公開編號WO2004/005588、日本特開2006-257153號、日本特開2007-326923號、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、日本特開2009-67029號、國際公開編號WO2006/134868、日本專利第5046927號、日本特開2009-173017號、國際公開編號WO2007/105635、日本專利第5180815號、國際公開編號WO2008/114858、國際公開編號WO2009/008471、日本特開2011-14727號、國際公開編號WO2009/001850、國際公開編號WO2009/145179、國際公開編號WO2011/068157、日本特開2013-19056號。 The resin layer may contain any of a known resin, a resin hardener, a compound, a hardening accelerator, and a dielectric (a dielectric including an inorganic compound and / or an organic compound, a dielectric including a metal oxide, or the like) may be used. (Electric body), reaction catalyst, cross-linking agent, polymer, prepreg, framework material, etc. The resin layer may be, for example, those described in the following documents (resin, resin hardener, compound, hardening accelerator, dielectric, reaction catalyst, cross-linking agent, polymer, prepreg, skeleton material, etc.) And / or resin layer forming method and device: International Publication No. WO2008 / 004399, International Publication No. WO2008 / 053878, International Publication No. WO2009 / 084533, Japanese Patent Laid-Open No. 11-5828, Japanese Patent Laid-Open No. 11-140281 , Japanese Patent No. 3184485, International Publication No. WO97 / 02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Laid-Open No. 2002-359444, Japanese Patent Laid-Open No. 2003-304068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003-249739, Japanese Patent No. 4136509, Japanese Patent Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Laid-Open No. 2004-349654, Japanese Patent No. 4286060, Japanese Patent Laid-Open No. 2005-262506, Japanese Patent No. 4570070 No., Japanese Patent Laid-Open No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004 / 005588, Japanese Patent Laid-Open No. 2006-257153, Japanese Patent Laid-Open No. 2007-326923, Japanese Patent Laid-Open No. 2008- 111169, Japanese Patent No. 5024930, International Publication No. WO2006 / 028207, Japanese Patent No. 4828427, Japanese Patent Laid-Open No. 2009-67029, International Publication No. WO2006 / 134868, Japanese Patent No. 5046927, Japanese Patent Laid-Open No. 2009-173017 , International Publication No. WO2007 / 105635, Japanese Patent No. 5180815, International Publication No. WO2008 / 114858, International Publication No. WO2009 / 008471, Japanese Patent Application Publication No. 2011-14727, International Publication No. WO2009 / 001850, International Publication No. WO2009 / 145179, International Publication No. WO2011 / 068157, Japanese Patent Laid-Open No. 2013-19056.
將該等樹脂溶解於例如甲基乙基酮(MEK)、甲苯等之溶劑中而製成樹脂液,藉由例如輥塗佈法等將其塗佈於上述銅箔上或極薄銅層上、或上述耐熱層、防銹層、或上述鉻酸鹽皮膜層、或上述矽烷偶合劑層上,繼而視需要進行加熱乾燥去除溶劑而成為B階段狀態。乾燥只要使用例如熱風乾燥爐即可,乾燥溫度只要為100~250℃、較佳為130~200℃即可。 These resins are dissolved in a solvent such as methyl ethyl ketone (MEK), toluene, etc. to prepare a resin liquid, and the resin is applied to the above-mentioned copper foil or an extremely thin copper layer by, for example, a roll coating method. Or the heat-resistant layer, the rust-proof layer, the chromate film layer, or the silane coupling agent layer, and then, if necessary, heat-dried to remove the solvent and become a B-stage state. The drying can be performed using, for example, a hot-air drying furnace, and the drying temperature can be 100 to 250 ° C, preferably 130 to 200 ° C.
具備上述樹脂層之高頻電路用銅箔(附有樹脂之高頻電路用銅箔)係將其樹脂層與基材重疊後將整體熱壓接而使該樹脂層熱硬化,繼而以使銅箔形成特定之配線圖案之態樣使用。 The copper foil for high-frequency circuits provided with the resin layer (copper foil for high-frequency circuits with a resin) is made by laminating the resin layer and the substrate, and then thermocompression-bonding the entirety of the resin layer, and then copper The foil is used in the form of a specific wiring pattern.
又,具備上述樹脂層之附載體銅箔(附有樹脂之附載體銅箔)係將其樹脂層與基材重疊後將整體熱壓接而使該樹脂層熱硬化,繼而將載體剝離而露出極薄銅層(當然,露出的是該極薄銅層之中間層側之表面),因此以形成特定之配線圖案之態樣使用。 Moreover, the copper foil with a carrier provided with the said resin layer (copper foil with a carrier with a resin) overlaps the resin layer and a base material, and heat-compresses the whole resin by thermocompression, and the carrier is peeled and exposed. The ultra-thin copper layer (of course, the surface on the intermediate layer side of the ultra-thin copper layer is exposed), so it is used in the form of forming a specific wiring pattern.
若使用該附有樹脂之高頻電路用銅箔或附有樹脂之附載體銅箔,則可減少製造多層印刷配線基板時之預浸體材料之使用片數。而且,將樹脂層之厚度設為可確保層間絕緣之厚度,或者即便完全不使用預浸體材料亦可製造覆銅積層板。又,此時,亦可於基材之表面底塗絕緣樹脂而進一步改善表面之平滑性。 If the copper foil for high-frequency circuits with a resin or the copper foil with a carrier with a resin is used, the number of prepreg materials used in manufacturing a multilayer printed wiring board can be reduced. In addition, the thickness of the resin layer is set to a thickness capable of ensuring interlayer insulation, or a copper-clad laminated board can be manufactured without using a prepreg material at all. At this time, the surface of the substrate may be primed with an insulating resin to further improve the surface smoothness.
再者,於不使用預浸體材料之情形時,可節約預浸體材料之材料成本,又,積層步驟亦變得簡略,因此於經濟上較為有利,而且,具有如下優點:僅製造預浸體材料之厚度程度的多層印刷配線基板之厚度變薄,可製造1層厚度為100μm以下之極薄之多層印刷配線基板。 Furthermore, when the prepreg material is not used, the material cost of the prepreg material can be saved, and the lamination step becomes simplified, so it is economically advantageous, and it has the following advantages: only the prepreg is manufactured The thickness of the multilayer printed wiring board having a thickness of approximately the bulk material can be reduced, and an extremely thin multilayer printed wiring board having a thickness of 100 μm or less can be manufactured.
該樹脂層之厚度較佳為0.1~80μm。 The thickness of the resin layer is preferably 0.1 to 80 μm.
若樹脂層之厚度薄於0.1μm,則有如下情況:接著力降低,不經由預浸體材料而將該附有樹脂之附載體銅箔積層於具備內層材之基材上時,難以確保內層材與電路之間之層間絕緣。 If the thickness of the resin layer is less than 0.1 μm, there is a case where the adhesive force is reduced and it is difficult to ensure that the resin-coated copper foil with a carrier is laminated on a substrate provided with an inner layer material without passing through the prepreg material. Interlayer insulation between the inner layer and the circuit.
另一方面,若樹脂層之厚度厚於80μm,則難以利用1次塗佈步驟形成目標厚度之樹脂層,而需要多餘之材料費和步驟數,因此於經濟上變得不利。進而,所形成之樹脂層之可撓性較差,因此存在如下情況:於操作時容易產生龜裂等,又,於熱壓接於內層材時會引起過度之樹脂流動而難以圓滑地進行積層。 On the other hand, if the thickness of the resin layer is greater than 80 μm, it is difficult to form a resin layer of a target thickness in one coating step, and an excessive material cost and number of steps are required, which is disadvantageous economically. Furthermore, the formed resin layer has poor flexibility, so there are cases where cracks and the like are easy to occur during operation, and excessive resin flow is caused during thermal compression bonding to the inner layer material, which makes it difficult to laminate smoothly. .
再者,作為附有樹脂之附載體銅箔之另一個製品形態,亦可以樹脂層被覆於上述極薄銅層上、或上述耐熱層、防銹層、或上述鉻酸鹽層、或上述矽烷偶合層上,於成為半硬化狀態後,繼而將載體剝離,以不存在載體之附有樹脂之銅箔(極薄銅層)之形式進行製造。 Furthermore, as another product form of the copper foil with a carrier and a resin attached thereto, a resin layer may be coated on the extremely thin copper layer, or the heat-resistant layer, rust-proof layer, or the chromate layer, or the silane After the coupling layer is in a semi-hardened state, the carrier is peeled off, and manufactured in the form of a copper foil (ultra-thin copper layer) with resin without a carrier.
此處,以下,表示若干使用本發明之附載體銅箔之印刷配線板之製造步驟之例。 Here, some examples of the manufacturing steps of the printed wiring board using the copper foil with a carrier of this invention are shown below.
本發明之印刷配線板之製造方法之一實施形態含有如下步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;及以使極薄銅層側與絕緣基板對向之方式將上述附載體銅箔與絕緣基板積層後,經過將上述附載體銅箔之載體剝離之步驟而形成覆銅積層板,然後,藉由半加成法、改良半加成法、部分加成法及減成法之任一種方法形成電路。絕緣基板亦可設為內層電路入口。 One embodiment of the method for manufacturing a printed wiring board of the present invention includes the following steps: preparing the copper foil with a carrier and an insulating substrate of the present invention; laminating the copper foil with a carrier and the insulating substrate; and insulating the ultra-thin copper layer side from the insulation. After the copper foil with a carrier and an insulating substrate are laminated in a substrate facing manner, a copper-clad laminated board is formed through a step of peeling the carrier of the copper foil with a carrier, and then a semi-additive method and an improved semi-additive method are used. Either the partial addition method or the subtraction method forms a circuit. The insulating substrate can also be used as an inner circuit entrance.
於本發明中,所謂半加成法,係指含有如下情況之方法:於絕緣基板或銅箔晶種層上進行薄之無電解鍍敷,形成鍍敷阻劑之圖案後,進行電鍍、鍍敷阻劑之去除及蝕刻,藉此形成導體圖案。 In the present invention, the so-called semi-additive method refers to a method including the following cases: thin electroless plating on an insulating substrate or a copper foil seed layer to form a pattern of a plating resist, and then plating and plating The resist is removed and etched to form a conductor pattern.
於本發明中,所謂改良半加成法,係指含有如下情況之方法:於絕緣層上積層金屬箔,利用鍍敷阻劑保護非電路形成部,藉由電解鍍敷增厚電路形成部之銅厚後,去除抗蝕劑,利用(快速)蝕刻去除上述電路形成部以外之金屬箔,藉此於絕緣層上形成電路。 In the present invention, the so-called improved semi-additive method refers to a method including: laminating a metal foil on an insulating layer, protecting a non-circuit forming portion with a plating resist, and thickening the circuit forming portion by electrolytic plating. After the copper is thick, the resist is removed, and the metal foil other than the circuit forming portion is removed by (rapid) etching, thereby forming a circuit on the insulating layer.
於本發明中,所謂部分加成法,係指利用含有如下情況之方法而製造印刷配線板的方法:於設置導體層而成之基板、視需要穿過通孔或輔助孔用之孔而成之基板上賦予觸媒核,進行蝕刻形成導體電路,視需要設置阻焊劑或鍍敷阻劑後,於上述導體電路上藉由無電解鍍敷處理對通孔或輔助孔等進行增厚。 In the present invention, the so-called partial addition method refers to a method for manufacturing a printed wiring board by a method including a substrate formed by providing a conductor layer and passing through holes for through holes or auxiliary holes as necessary. A catalyst core is provided on the substrate, and a conductor circuit is formed by etching. If necessary, a solder resist or a plating resist is provided, and then through holes or auxiliary holes are thickened by the electroless plating process on the conductor circuit.
於本發明中,所謂減成法,係指含有如下情況之方法:藉由蝕刻等選擇性地去除覆銅積層板上之銅箔之不需要部分而形成導體圖案。 In the present invention, the so-called subtractive method refers to a method including a case where a conductor pattern is formed by selectively removing unnecessary portions of a copper foil on a copper-clad laminate by etching or the like.
再者,於本發明中,可使用公知之方法作為半加成法、改良半加成法、部分加成法及減成法。又,於本發明中,上述半加成法、改良半加成法、部分加成法及減成法中,亦可於絕緣基板等設置通孔或/及盲孔。 Furthermore, in the present invention, known methods can be used as the semi-additive method, the modified semi-additive method, the partial additive method, and the subtractive method. Further, in the present invention, in the semi-additive method, the improved semi-additive method, the partial additive method, and the subtractive method, a through hole and / or a blind hole may be provided in an insulating substrate or the like.
此處,使用圖式對本發明之使用附載體銅箔之印刷配線板之製造方法之具體例詳細地進行說明。 Here, the specific example of the manufacturing method of the printed wiring board using the copper foil with a carrier of this invention is demonstrated in detail using drawing.
首先,如圖5-A所示,準備具有表面形成有粗化處理層之極薄銅層的附載體銅箔(第1層)。 First, as shown in FIG. 5-A, a copper foil with a carrier (first layer) having an ultra-thin copper layer having a roughened layer formed on the surface is prepared.
其次,如圖5-B所示,於極薄銅層之粗化處理層上塗佈抗蝕劑,進行曝光、顯影,將抗蝕劑蝕刻為特定之形狀。 Next, as shown in FIG. 5-B, a resist is coated on the roughened layer of the ultra-thin copper layer, exposed and developed, and the resist is etched into a specific shape.
其次,如圖5-C所示,於形成電路用鍍敷後,去除抗蝕劑,藉此形成特定之形狀之電路鍍敷。 Secondly, as shown in FIG. 5-C, after forming the circuit plating, the resist is removed, thereby forming a circuit plating of a specific shape.
其次,如圖6-D所示,以被覆電路鍍敷之方式(以埋沒電路鍍敷之方式)於極薄銅層上設置埋入樹脂而積層樹脂層,繼而,自極薄銅層側接著另一附載體銅箔(第2層)。 Next, as shown in Fig. 6-D, a resin layer is laminated on the ultra-thin copper layer by covering the circuit plating method (by the buried circuit plating method), and then the resin layer is laminated from the ultra-thin copper layer side. Another copper foil with carrier (layer 2).
其次,如圖6-E所示,自第2層之附載體銅箔剝離載體。 Next, as shown in FIG. 6-E, the carrier is peeled from the copper foil with a carrier in the second layer.
其次,如圖6-F所示,於樹脂層之特定位置進行雷射開孔,露出電路鍍敷而形成盲孔。 Secondly, as shown in FIG. 6-F, laser drilling is performed at a specific position of the resin layer to expose the circuit plating and form a blind hole.
其次,如圖7-G所示,於盲孔中埋入銅,形成通孔填充物。 Secondly, as shown in FIG. 7-G, copper is buried in the blind holes to form through-hole filling materials.
其次,如圖7-H所示,於通孔填充物上,以上述圖5-B及圖5-C之方式形成電路鍍敷。 Next, as shown in FIG. 7-H, a circuit plating is formed on the through-hole filler in the manner of FIGS. 5-B and 5-C described above.
其次,如圖7-I所示,自第1層之附載體銅箔剝離載體。 Next, as shown in FIG. 7-I, the carrier is peeled from the copper foil with a carrier in the first layer.
其次,如圖8-J所示,藉由快速蝕刻去除兩表面之極薄銅層,使樹脂層內之電路鍍敷之表面露出。 Secondly, as shown in FIG. 8-J, the ultra-thin copper layers on both surfaces are removed by rapid etching, so that the surface of the circuit plating in the resin layer is exposed.
其次,如圖8-K所示,於樹脂層內之電路鍍敷上形成凸塊,於該焊料上形成銅柱。如此製作使用本發明之附載體銅箔之印刷配線板。 Next, as shown in FIG. 8-K, bumps are formed on the circuit plating in the resin layer, and copper pillars are formed on the solder. In this way, a printed wiring board using the copper foil with a carrier of the present invention was produced.
上述另一附載體銅箔(第2層)可使用本發明之附載體銅箔,可使用習知之附載體銅箔,進而亦可使用通常之銅箔。又,可於圖7-H所示之第2層之電路上進而形成1層或複數層電路,可藉由半加成法、減成法、部分加成法或改良半加成法之任一種方法形成該等電路。 The other copper foil with a carrier (second layer) described above may use the copper foil with a carrier of the present invention, a conventional copper foil with a carrier may be used, and a general copper foil may also be used. In addition, one or multiple layers of circuits can be formed on the second layer of the circuit shown in Figure 7-H. Any of the semi-additive method, subtractive method, partial additive method, or modified semi-additive method can be used. One way to form such circuits.
藉由如上所述之印刷配線板之製造方法,形成使電路鍍敷埋入樹脂層之構成,因此於例如圖8-J所示之利用快速蝕刻去除極薄銅層時,藉由樹脂層保護電路鍍敷,並保持其形狀,藉此容易形成微細電路。又,由於藉由樹脂層保護電路鍍敷,故而耐電子遷移性提高,可良好地抑制電路之配線之導通。因此,容易形成微細電路。又,於圖8-J及圖8-K所表示般藉由快速蝕刻去除極薄銅層時,電路鍍敷之露出面成為自樹脂層凹陷之形狀,因此容易於該電路鍍敷上形成凸塊,進而於其上形成銅柱,從而提高製造效率。 According to the manufacturing method of the printed wiring board as described above, a structure is formed in which the circuit plating is buried in the resin layer. Therefore, when the ultra-thin copper layer is removed by rapid etching as shown in FIG. 8-J, the resin layer is used for protection. The circuit is plated and its shape is maintained, whereby a fine circuit can be easily formed. In addition, since the circuit plating is protected by the resin layer, the electron migration resistance is improved, and the conduction of the wiring of the circuit can be suppressed well. Therefore, it is easy to form a fine circuit. In addition, when the ultra-thin copper layer is removed by rapid etching as shown in FIGS. 8-J and 8-K, the exposed surface of the circuit plating becomes a shape recessed from the resin layer, so it is easy to form a protrusion on the circuit plating. Blocks, and copper pillars are formed thereon, thereby improving manufacturing efficiency.
再者,埋入樹脂(Resin)可使用公知之樹脂、預浸體。例如可使用BT(雙順丁烯二醯亞胺三)樹脂或含浸BT樹脂之玻璃布即預浸體、Ajinomoto Fine-Techno股份有限公司製造之ABF膜或ABF。又,上述埋入樹脂(Resin)可使用本說明書中記載之樹脂層及/或樹脂及/或預浸體。 Further, as the embedded resin (Resin), a known resin or prepreg can be used. For example, BT (bis-cis-butene difluorene imine tri ) Resin or glass cloth impregnated with BT resin is prepreg, ABF film or ABF manufactured by Ajinomoto Fine-Techno Co., Ltd. As the embedded resin (Resin), a resin layer and / or a resin and / or a prepreg described in this specification can be used.
又,關於上述用於第一層之附載體銅箔,於該附載體銅箔之 表面可具有基板或樹脂層。藉由具有該基板或樹脂層而用於第一層之附載體銅箔受到支撐,變得不易產生皺褶,因此有提高生產性之優點。再者,只要上述基板或樹脂層具有支撐上述用於第一層之附載體銅箔之效果,則可使用全部基板或樹脂層。例如,可使用本案說明書中記載之載體、預浸體、樹脂層或公知之載體、預浸體、樹脂層、金屬板、金屬箔、無機化合物之板、無機化合物之箔、有機化合物之板、有機化合物之箔作為上述基板或樹脂層。 Also, regarding the copper foil with a carrier for the first layer described above, The surface may have a substrate or a resin layer. By having the substrate or the resin layer, the copper foil with a carrier for the first layer is supported, so that wrinkles are not easily generated, and therefore there is an advantage of improving productivity. Furthermore, as long as the substrate or the resin layer has the effect of supporting the copper foil with a carrier for the first layer described above, all the substrates or the resin layer may be used. For example, a carrier, a prepreg, a resin layer or a known carrier, a prepreg, a resin layer, a metal plate, a metal foil, a plate of an inorganic compound, a plate of an inorganic compound, a plate of an organic compound, or the like described in the specification of the present case can be used. An organic compound foil is used as the substrate or resin layer.
以下,基於實施例及比較例進行說明。再者,本實施例僅為一例,並不僅受限於該例。即,包含本發明所含之其他態樣或變形。再者,以下實施例1~6、11~15及比較例1~5之原箔使用標準壓延銅箔TPC(以JIS H3100 C1100為標準之精銅,JX Nippon Mining & Metals製造)18μm。 Hereinafter, it demonstrates based on an Example and a comparative example. Furthermore, this embodiment is only an example, and is not limited to this example. That is, other aspects or modifications included in the present invention are included. The original foils of the following Examples 1 to 6, 11 to 15, and Comparative Examples 1 to 5 used a standard rolled copper foil TPC (fine copper based on JIS H3100 C1100, manufactured by JX Nippon Mining & Metals) of 18 μm.
又,實施例7~10之原箔使用藉由以下方法製造之附載體銅箔。 In addition, as the original foils of Examples 7 to 10, a copper foil with a carrier manufactured by the following method was used.
實施例7~10係準備厚度18μm之電解銅箔(JX Nippon Mining & Metals製造之JTC箔)作為載體,實施例12係準備上述厚度18μm之標準壓延銅箔TPC作為載體。並且,於下述條件下於載體之表面形成中間層,於中間層之表面形成極薄銅層。再者,於載體為電解銅箔之情形時,於光澤面(S面)形成中間層。 In Examples 7 to 10, an electrolytic copper foil (JTC foil manufactured by JX Nippon Mining & Metals) with a thickness of 18 μm was prepared as a carrier, and in Example 12, the standard rolled copper foil TPC with a thickness of 18 μm was prepared as a carrier. In addition, an intermediate layer was formed on the surface of the carrier under the following conditions, and an extremely thin copper layer was formed on the surface of the intermediate layer. When the carrier is an electrolytic copper foil, an intermediate layer is formed on the glossy surface (S surface).
(1)Ni層(Ni鍍敷) (1) Ni layer (Ni plating)
於以下條件下,利用輥對輥型之連接鍍敷線對載體進行電鍍,藉此形 成1000μg/dm2之附著量之Ni層。具體之鍍敷條件記載如下。 Under the following conditions, the carrier was electroplated using a roll-to-roll connection plating line, thereby forming a Ni layer having an adhesion amount of 1000 μg / dm 2 . Specific plating conditions are described below.
硫酸鎳:270~280g/L Nickel sulfate: 270 ~ 280g / L
氯化鎳:35~45g/L Nickel chloride: 35 ~ 45g / L
乙酸鎳:10~20g/L Nickel acetate: 10 ~ 20g / L
硼酸:30~40g/L Boric acid: 30 ~ 40g / L
光澤劑:糖精、丁炔二醇等 Luster: Saccharin, butynediol, etc.
十二烷基硫酸鈉:55~75ppm Sodium lauryl sulfate: 55 ~ 75ppm
pH值:4~6 pH value: 4 ~ 6
浴溫:55~65℃ Bath temperature: 55 ~ 65 ℃
電流密度:10A/dm2 Current density: 10A / dm 2
(2)Cr層(電解鉻酸鹽處理) (2) Cr layer (electrolytic chromate treatment)
其次,將(1)中所形成之Ni層表面水洗及酸洗後,繼而,於輥對輥型之連接鍍敷線上,藉由於以下條件下對11μg/dm2之附著量之Cr層進行電解鉻酸鹽處理而使之附著於Ni層上。 Next, the surface of the Ni layer formed in (1) was washed with water and pickled, and then, on a roll-to-roll connection plating line, the Cr layer with an adhesion amount of 11 μg / dm 2 was electrolyzed under the following conditions: The chromate treatment adheres to the Ni layer.
重鉻酸鉀1~10g/L、鋅0g/L Potassium dichromate 1 ~ 10g / L, zinc 0g / L
pH值:7~10 pH value: 7 ~ 10
液溫:40~60℃ Liquid temperature: 40 ~ 60 ℃
電流密度:2A/dm2 Current density: 2A / dm 2
其次,將(2)中所形成之Cr層表面水洗及酸洗後,繼而,於輥對輥型之連接鍍敷線上,藉由於以下條件下電鍍厚度1.5μm之極薄銅層而使之形成於Cr層上,從而製作附載體銅箔。 Next, the surface of the Cr layer formed in (2) was washed with water and pickled, and then formed on a roll-to-roll connection plating line by electroplating an extremely thin copper layer having a thickness of 1.5 μm under the following conditions. A copper foil with a carrier was produced on the Cr layer.
銅濃度:90~110g/L Copper concentration: 90 ~ 110g / L
硫酸濃度:90~110g/L Sulfuric acid concentration: 90 ~ 110g / L
氯化物離子濃度:50~90ppm Chloride ion concentration: 50 ~ 90ppm
調平劑1(雙(3-磺丙基)二硫醚):10~30ppm Leveling agent 1 (bis (3-sulfopropyl) disulfide): 10 ~ 30ppm
調平劑2(胺化合物):10~30ppm Leveling agent 2 (amine compound): 10 ~ 30ppm
再者,使用下述胺化合物作為調平劑2。 The following amine compound was used as the leveling agent 2.
(上述化學式中,R1及R2選自由羥基烷基、醚基、芳基、芳香族取代烷基、不飽和烴基、烷基所組成之群) (In the above chemical formula, R 1 and R 2 are selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group.)
電解液溫度:50~80℃ Electrolyte temperature: 50 ~ 80 ℃
電流密度:100A/dm2 Current density: 100A / dm 2
電解液線速度:1.5~5m/sec Linear speed of electrolyte: 1.5 ~ 5m / sec
(1)Ni-Mo層(鎳鉬合金鍍敷) (1) Ni-Mo layer (nickel-molybdenum alloy plating)
於以下條件下,利用輥對輥型之連接鍍敷線對載體進行電鍍,藉此形成3000μg/dm2之附著量之Ni-Mo層。具體之鍍敷條件記載如下。 Under the following conditions, the carrier was electroplated using a roll-to-roll connection plating line, thereby forming a Ni-Mo layer with an adhesion amount of 3000 μg / dm 2 . Specific plating conditions are described below.
(液組成)硫酸Ni六水合物:50g/dm3、鉬酸鈉二水合物:60g/dm3、檸檬酸鈉:90g/dm3 (Liquid composition) Ni sulfate hexahydrate: 50 g / dm 3 , sodium molybdate dihydrate: 60 g / dm 3 , sodium citrate: 90 g / dm 3
(液溫)30℃ (Liquid temperature) 30 ℃
(電流密度)1~4A/dm2 (Current density) 1 ~ 4A / dm 2
(通電時間)3~25秒 (Power-on time) 3 ~ 25 seconds
於(1)中所形成之Ni-Mo層上形成極薄銅層。將極薄銅層之厚度設為2μm,除此以外,於與實施例7相同之條件下形成極薄銅層。 An extremely thin copper layer is formed on the Ni-Mo layer formed in (1). An ultra-thin copper layer was formed under the same conditions as in Example 7 except that the thickness of the ultra-thin copper layer was set to 2 μm.
(1)Ni層(Ni鍍敷) (1) Ni layer (Ni plating)
於與實施例7相同之條件下形成Ni層。 A Ni layer was formed under the same conditions as in Example 7.
(2)有機物層(有機物層形成處理) (2) Organic layer (organic layer forming treatment)
其次,將(1)中所形成之Ni層表面水洗及酸洗後,繼而,於下述條件下對Ni層表面淋浴並噴霧含有濃度1~30g/L之羧基苯并三唑(CBTA)之液溫40℃、pH值5之水溶液20~120秒,藉此形成有機物層。 Next, after the surface of the Ni layer formed in (1) was washed with water and acid, the surface of the Ni layer was showered under the following conditions and sprayed with a carboxybenzotriazole (CBTA) containing 1-30 g / L An aqueous solution having a liquid temperature of 40 ° C and a pH value of 20 for 20 to 120 seconds forms an organic layer.
於(2)中所形成之有機物層上形成極薄銅層。將極薄銅層之厚度設為3μm,除此以外,於與實施例7相同之條件下形成極薄銅層。 An extremely thin copper layer is formed on the organic layer formed in (2). An ultra-thin copper layer was formed under the same conditions as in Example 7 except that the thickness of the ultra-thin copper layer was 3 μm.
(1)Co-Mo層(鈷鉬合金鍍敷) (1) Co-Mo layer (cobalt-molybdenum alloy plating)
於以下條件下,利用輥對輥型之連接鍍敷線對載體進行電鍍,藉此形成4000μg/dm2之附著量之Co-Mo層。具體之鍍敷條件記載如下。 Under the following conditions, the carrier was plated with a roll-to-roll connection plating line, thereby forming a Co-Mo layer with an adhesion amount of 4000 μg / dm 2 . Specific plating conditions are described below.
(液組成)硫酸Co:50g/dm3、鉬酸鈉二水合物:60g/dm3、檸檬酸鈉:90g/dm3 (Liquid composition) Co sulfate: 50 g / dm 3 , sodium molybdate dihydrate: 60 g / dm 3 , sodium citrate: 90 g / dm 3
(液溫)30℃ (Liquid temperature) 30 ℃
(電流密度)1~4A/dm2 (Current density) 1 ~ 4A / dm 2
(通電時間)3~25秒 (Power-on time) 3 ~ 25 seconds
於(1)中所形成之Co-Mo層上形成極薄銅層。將極薄銅層之厚度設為5μm,除此以外,於與實施例7相同之條件下形成極薄銅層。 An extremely thin copper layer is formed on the Co-Mo layer formed in (1). An extremely thin copper layer was formed under the same conditions as in Example 7 except that the thickness of the extremely thin copper layer was set to 5 μm.
於下述所示之條件範圍,於壓延銅箔(實施例1~6、11~15)或附載體銅箔之極薄銅層表面(實施例7~10)形成一次粒子層(Cu)、二次粒子層(銅-鈷-鎳合金鍍敷)。 The primary particle layer (Cu) was formed on the surface of the rolled copper foil (Examples 1 to 6, 11 to 15) or the extremely thin copper layer of the copper foil with a carrier (Examples 7 to 10) within the range of conditions shown below. Secondary particle layer (copper-cobalt-nickel alloy plating).
所使用之浴組成及鍍敷條件係如下所述。 The bath composition and plating conditions used are as follows.
(A)一次粒子層之形成(Cu鍍敷) (A) Formation of primary particle layer (Cu plating)
液組成:銅15g/L、硫酸75g/L Liquid composition: copper 15g / L, sulfuric acid 75g / L
液溫:25~30℃ Liquid temperature: 25 ~ 30 ℃
電流密度:1~70A/dm2 Current density: 1 ~ 70A / dm 2
庫侖量:2~90As/dm2 Coulomb volume: 2 ~ 90As / dm 2
(B)二次粒子層之形成(Cu-Co-Ni合金鍍敷) (B) Formation of secondary particle layer (Cu-Co-Ni alloy plating)
液組成:銅15g/L、鎳8g/L、鈷8g/L Liquid composition: copper 15g / L, nickel 8g / L, cobalt 8g / L
pH值:2 pH: 2
液溫:40℃ Liquid temperature: 40 ℃
電流密度:10~50A/dm2 Current density: 10 ~ 50A / dm 2
庫侖量:10~80As/dm2 Coulomb volume: 10 ~ 80As / dm 2
調整上述一次粒子層之形成(Cu鍍敷)及二次粒子層之形成(Cu-Co-Ni合金鍍敷)之條件,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1500以上。表面積之測量係使用利用上述雷射顯微鏡之測量法。 The conditions for the formation of the primary particle layer (Cu plating) and the formation of the secondary particle layer (Cu-Co-Ni alloy plating) were adjusted, and the average value of the roughness height of the roughened surface obtained by a laser microscope was 1500. the above. The surface area is measured using a measurement method using the above-mentioned laser microscope.
於比較例中,所使用之浴組成及鍍敷條件係如下所述。 In the comparative example, the bath composition and plating conditions used are as follows.
(A)一次粒子層之形成(銅鍍敷) (A) Formation of primary particle layer (copper plating)
液組成:銅15g/L、硫酸75g/L Liquid composition: copper 15g / L, sulfuric acid 75g / L
液溫:25~35℃ Liquid temperature: 25 ~ 35 ℃
電流密度:1~70A/dm2 Current density: 1 ~ 70A / dm 2
庫侖量:2~90As/dm2 Coulomb volume: 2 ~ 90As / dm 2
(B)二次粒子層之形成(Cu-Co-Ni合金鍍敷條件) (B) Formation of secondary particle layer (Cu-Co-Ni alloy plating conditions)
液組成:銅15g/L、鎳8g/L、鈷8g/L Liquid composition: copper 15g / L, nickel 8g / L, cobalt 8g / L
pH值:2 pH: 2
液溫:40℃ Liquid temperature: 40 ℃
電流密度:20~50A/dm2 Current density: 20 ~ 50A / dm 2
庫侖量:30~80As/dm2 Coulomb volume: 30 ~ 80As / dm 2
於形成一次粒子層及二次粒子層後,一部分之實施例及比較例係進行利用以下條件之表面處理層。 After forming the primary particle layer and the secondary particle layer, a part of the examples and comparative examples were subjected to a surface treatment layer using the following conditions.
‧Co-Ni鍍敷:鈷鎳合金鍍敷 ‧Co-Ni plating: cobalt-nickel alloy plating
液組成:鎳5~20g/L、鈷1~8g/L Liquid composition: nickel 5 ~ 20g / L, cobalt 1 ~ 8g / L
pH值:2~3 pH value: 2 ~ 3
液溫:40~60℃ Liquid temperature: 40 ~ 60 ℃
電流密度5~20A/dm2 Current density 5 ~ 20A / dm 2
庫侖量:10~20As/dm2 Coulomb volume: 10 ~ 20As / dm 2
‧Ni-Zn鍍敷:鎳鋅合金鍍敷 ‧Ni-Zn plating: nickel-zinc alloy plating
液組成:鎳2~30g/L、鋅2~30g/L Liquid composition: nickel 2 ~ 30g / L, zinc 2 ~ 30g / L
pH值3~4 pH 3 ~ 4
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
再者,實施例5及10係於Ni-Zn鍍敷後,進行電解鉻酸鹽處理以及使用二胺基矽烷之矽烷偶合處理。 In addition, Examples 5 and 10 were subjected to electrolytic chromate treatment and silane coupling treatment using diaminosilane after Ni-Zn plating.
‧Ni-Cu鍍敷:鎳銅合金鍍敷 ‧Ni-Cu plating: nickel-copper alloy plating
液組成:鎳2~30g/L、銅2~30g/L Liquid composition: nickel 2 ~ 30g / L, copper 2 ~ 30g / L
pH值:3~4 pH value: 3 ~ 4
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
‧Ni-Mo鍍敷:鎳鉬合金鍍敷 ‧Ni-Mo plating: nickel-molybdenum alloy plating
液組成:硫酸Ni六水合物:45~55g/dm3、鉬酸鈉二水合物:50~70g/dm3、檸檬酸鈉:80~100g/dm3 Liquid composition: Ni sulphate hexahydrate: 45 ~ 55g / dm 3 , sodium molybdate dihydrate: 50 ~ 70g / dm 3 , sodium citrate: 80 ~ 100g / dm 3
液溫:20~40℃ Liquid temperature: 20 ~ 40 ℃
電流密度:1~4A/dm2 Current density: 1 ~ 4A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
再者,實施例11係於Ni-Mo鍍敷後進行電解鉻酸鹽處理。 In addition, Example 11 was subjected to electrolytic chromate treatment after Ni-Mo plating.
‧Ni-Sn鍍敷:鎳錫合金鍍敷 ‧Ni-Sn plating: nickel-tin alloy plating
液組成:鎳2~30g/L、錫2~30g/L Liquid composition: nickel 2 ~ 30g / L, tin 2 ~ 30g / L
pH值:1.5~4.5 pH value: 1.5 ~ 4.5
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
再者,實施例12係於Ni-Sn鍍敷後,進行使用二胺基矽烷之矽烷偶合處理。 In addition, Example 12 was subjected to a silane coupling treatment using diamine silane after Ni-Sn plating.
‧Ni-P鍍敷:鎳磷合金鍍敷 ‧Ni-P plating: nickel-phosphorus alloy plating
液組成:鎳30~70g/L、磷0.2~1.2g/L Liquid composition: nickel 30 ~ 70g / L, phosphorus 0.2 ~ 1.2g / L
pH值:1.5~2.5 pH value: 1.5 ~ 2.5
液溫:30~40℃ Liquid temperature: 30 ~ 40 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
‧Ni-W鍍敷:鎳鎢合金鍍敷 ‧Ni-W plating: nickel-tungsten alloy plating
液組成:鎳2~30g/L、W0.01~5g/L Liquid composition: nickel 2 ~ 30g / L, W0.01 ~ 5g / L
pH值:3~4 pH value: 3 ~ 4
液溫:30~50℃ Liquid temperature: 30 ~ 50 ℃
電流密度:1~2A/dm2 Current density: 1 ~ 2A / dm 2
庫侖量:1~2As/dm2 Coulomb volume: 1 ~ 2As / dm 2
再者,實施例14係於Ni-W鍍敷後,進行電解鉻酸鹽處理以及使用二胺基矽烷之矽烷偶合處理。 In addition, Example 14 was subjected to electrolytic chromate treatment and silane coupling treatment using diamine silane after Ni-W plating.
‧Ni-Cr鍍敷:鎳鉻合金鍍敷 ‧Ni-Cr plating: nickel-chromium alloy plating
使用Ni:80mass%、Cr:20mass%之組成之濺鍍靶而形成鎳鉻合金鍍層。 A nickel-chromium alloy coating was formed using a sputtering target composed of Ni: 80mass% and Cr: 20mass%.
靶:Ni:80mass%、Cr:20mass% Target: Ni: 80mass%, Cr: 20mass%
裝置:ULVAC股份有限公司製造之濺鍍裝置 Device: Sputtering device manufactured by ULVAC Co., Ltd.
輸出:DC50W Output: DC50W
氬氣壓力:0.2Pa Argon pressure: 0.2Pa
對於形成藉由上述實施例形成之銅箔上之一次粒子層(Cu鍍敷)及二次粒子層(Cu-Co-Ni合金鍍敷)之情形時的一次粒子之平均粒徑、二次粒子之平均粒徑、落粉、剝離強度、耐熱性、粗化處理面之一定區域之高度直方圖之平均值(凹凸高度)進行測量,測得之結果示於表1。此處,所測量之「粗化處理面」設為形成一次粒子層及二次粒子層側之最表面。再者,於二次粒子層上形成有Co-Ni鍍敷、Ni-Zn鍍敷、鉻酸鹽層、矽烷偶合層等之,一次粒子層及二次粒子層以外之表面處理層者係將該等層中之最表層之表面作為粗化處理面而測量(即,對形成銅箔之全部表面處理層後之存在一次粒子層及二次粒子層側之表面進行測量)。 When forming the primary particle layer (Cu plating) and the secondary particle layer (Cu-Co-Ni alloy plating) on the copper foil formed in the above examples, the average particle diameter of the primary particles and the secondary particles The average particle diameter, falling powder, peeling strength, heat resistance, and the average value of the height histogram (concave and convex height) of a certain area of the roughened surface were measured. The measured results are shown in Table 1. Here, the "roughened surface" measured is the outermost surface on which the primary particle layer and the secondary particle layer are formed. Further, Co-Ni plating, Ni-Zn plating, chromate layer, silane coupling layer, etc. are formed on the secondary particle layer, and those having a surface treatment layer other than the primary particle layer and the secondary particle layer will be The surface of the outermost layer among these layers is measured as a roughened surface (that is, the surface of the primary particle layer and the secondary particle layer side after the entire surface treatment layer of the copper foil is formed is measured).
粗化處理面之一次粒子及二次粒子之平均粒徑係使用日立高新技術股份有限公司製造之S4700(掃描型電子顯微鏡)以30000倍之倍率進行粒子觀察及照片拍攝,基於所獲得之照片分別對各一次粒子及二次粒子測量粒徑。然後,將該所獲得之各一次粒子及二次粒子之粒徑之算術平均值設為一次粒子之平均粒徑及二次粒子之平均粒徑之值。再者,於在掃描型電子顯微鏡照片之粒子之上畫直線之情形時,將橫切粒子之直線長度為最長部分之粒子長度設為該粒子之粒徑。再者,測量視野之大小係設為每1視野面積13.44μm2(=4.2μm×3.2μm),對1視野進行測量。再者,於利用掃描型電子顯微鏡照片進行觀察時,將可見重疊且存在於銅箔側(下方)之粒子、及未重疊之粒子判定為一次粒子,將可見重疊且存在於其他粒子之上之粒子判定為二次粒子。 The average particle diameters of the primary particles and secondary particles of the roughened surface are measured by using S4700 (scanning electron microscope) manufactured by Hitachi High-tech Co., Ltd. at a magnification of 30,000 times. The particle diameter was measured for each primary particle and secondary particle. Then, the arithmetic mean value of the particle diameters of each of the obtained primary particles and secondary particles is taken as the value of the average particle diameter of the primary particles and the average particle diameter of the secondary particles. When a straight line is drawn on a particle in a scanning electron microscope photograph, the length of the particle having the longest straight line length across the particle is taken as the particle diameter of the particle. The size of the measurement field of view is 13.44 μm 2 (= 4.2 μm × 3.2 μm) per one field of view, and the measurement is performed for one field of view. In addition, when observing with a scanning electron microscope photograph, particles that are visible overlapping and existing on the copper foil side (below) and non-overlapping particles are determined as primary particles, and those that are visible overlapping and exist on other particles The particles were determined as secondary particles.
利用雷射顯微鏡獲得之粗化處理面之高度直方圖之平均值 (凹凸高度)之測量法係使用基恩斯股份有限公司製造之雷射顯微鏡VK8500,將倍率設定為1000倍,於雷射顯微鏡之台(stage)裝載作為測量對象之銅箔後,以聚焦手柄調整該台之位置,使雷射顯微鏡之透鏡之焦點與銅箔之粗化處理面對準後,進行以下之「DISTANCE‧PITCH之設定」,其後對銅箔之粗化處理面進行測量。 Average of height histogram of roughened surface obtained by laser microscope The measurement method of (concave and convex height) is to use a laser microscope VK8500 manufactured by Keynes Co., Ltd., set the magnification to 1000 times, load the copper foil as the measurement object on the laser microscope stage, and adjust the focus with the focus handle. After the position of the stage is aligned with the focal point of the lens of the laser microscope and the roughened surface of the copper foil, the following "DISTANCE · PITCH setting" is performed, and then the roughened surface of the copper foil is measured.
「DISTANCE‧PITCH之設定」係基於VK-8500用戶手冊4-3頁中之記載而進行。PITCH係設定為0.1μm。再者,作為參考,將該VK-8500用戶手冊4-3頁之「DISTANCE‧PITCH之設定」中揭示之操作畫面之例示於圖10。 "DISTANCE‧PITCH Setting" is based on the description on page 4-3 of the VK-8500 user manual. The PITCH system is set to 0.1 μm. In addition, as a reference, an example of the operation screen disclosed in "DISTANCE · PITCH Setting" on page 4-3 of this VK-8500 user manual is shown in FIG. 10.
又,VK-8500用戶手冊4-3頁之「點選1[▲](透鏡位置移動)按鈕而使透鏡向上移動至圖像之焦點不對準之位置」之「圖像之焦點不對準之位置」設為自可見圖像之透鏡之高度點選[▲](透鏡位置移動)按鈕,使透鏡之高度緩慢地升高,使該透鏡自對象(粗化處理面)遠離,從而使粗化處理面之圖像可見明顯模糊的位置。 In addition, "Click the 1 [▲] (Lens Position Move) button to move the lens up to the out of focus position of the image" in the VK-8500 User's Manual, page 4-3. ”Set the height of the lens as a self-visible image. Click the [▲] (lens position movement) button to slowly increase the height of the lens, and keep the lens away from the object (roughened surface), so that the roughened processing is performed. The image on the surface can be seen in a clearly blurred position.
又,VK-8500用戶手冊4-3頁之「點選3[▼](透鏡位置移動)按鈕而使透鏡向下移動至圖像之焦點不對準位置」之「圖像之焦點不對準之位置」設為自可見圖像之透鏡之高度點選[▼](透鏡位置移動)按鈕,使透鏡之高度緩慢地降低,使透鏡接近於粗化處理面,從而使粗化處理面之圖像可見明顯模糊之位置。再者,上述「DISTANCE‧PITCH之設定」及雷射顯微鏡之台之位置之調整於各實施例、比較例中分別進行。 Also, in the VK-8500 User Manual, page 4-3, click the "3 [▼] (Lens Position Move)" button to move the lens down to the out-of-focus position of the image. ”Set the height of the lens as a self-visible image. Click the [▼] (Lens Position Move) button to slowly reduce the height of the lens, make the lens close to the roughened surface, and make the image on the roughened surface visible. Obviously blurred location. In addition, the above-mentioned "setting of DISTANCE · PITCH" and the adjustment of the position of the table of the laser microscope were performed in each of Examples and Comparative Examples.
並且,所獲得之結果係藉由有效面積為786432μm2(測量區域100%)之測量解析,使用解析軟體KVH1A9將凹凸高度直方圖化,而求出其平均 值。具體而言,顯示「直方圖詳情(濃淡特徵)」之畫面,選擇「高度」作為「顯示資料」,選擇「直方圖」作為「顯示形式」,讀取「濃度測量」之表之「項目:平均」之值,將該讀取之值之小數點以下四捨五入,將所得值設為「利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值」。再者,上述解析軟體KVH1A9係使用基恩斯股份有限公司製造之雷射顯微鏡VK8500所配置者。 In addition, the obtained results were analyzed by measurement and analysis with an effective area of 786432 μm 2 (100% of the measurement area), and the rugged height histogram was analyzed using the analysis software KVH1A9 to obtain the average value. Specifically, the screen of "Histogram details (dark and light features)" is displayed, and "height" is selected as "display data", and "histogram" is selected as "display form". The value of "average" is rounded down to the decimal point of the read value, and the obtained value is set to "the average value of the unevenness of the roughened surface obtained by the laser microscope". The analysis software KVH1A9 is configured using a laser microscope VK8500 manufactured by Keynes Corporation.
落粉特性係藉由於銅箔之粗化處理面上貼附透明之隱形膠帶,剝離該膠帶時附著於膠帶黏著面之脫落粗化粒子而膠帶變色,根據該情況,對落粉特性進行評價。即,於膠帶無變色或極少之情形時係設為落粉良好(OK),於膠帶變色成灰色之情形時係設為落粉不良(NG)。常態剝離強度係以熱壓貼合銅箔粗化處理面與FR4樹脂基板而製作覆銅積層板,使用通常之氯化銅電路蝕刻液製作10mm電路,將10mm電路銅箔自基板剝離,一面於90°方向拉伸一面測量常態剝離強度。 The powder-falling property is obtained by attaching a transparent invisible tape on the roughened surface of the copper foil, and peeling the roughened particles attached to the adhesive surface of the tape when the tape is peeled off, thereby changing the color of the tape. That is, when the color of the tape is not discolored or very small, it is set to be OK (falling powder), and when the color of the tape is changed to gray, it is set to be powder fall (NG). The normal peeling strength is that a copper-clad laminated board is produced by laminating a copper foil roughened surface and a FR4 resin substrate by hot pressing. A common copper chloride circuit etching solution is used to make a 10mm circuit. The 10mm circuit copper foil is peeled from the substrate. The normal peeling strength was measured while pulling in the 90 ° direction.
對18μm厚之各樣品貼合表1記載之樹脂基板(LCP:液晶聚合物樹脂(Kuraray股份有限公司製造之Vecstar CTZ-50μm)、聚醯亞胺:Kaneka製造之厚度50μm、氟樹脂厚度50μm:Dupont製造)後,利用蝕刻以特性阻抗成為50Ω之方式形成微帶線路,使用HP公司製造之網路分析儀HP8720C測量穿透係數,求出於頻率20GHz及頻率40GHz之傳輸損耗。再者,實施例7~10係於將附載體銅箔之極薄銅層側之表面與表1中記載之樹脂基板貼合後,剝離載體,其後進行銅鍍敷,將極薄銅層與銅鍍敷之合計厚度設為18μm後,進行與上述相同之傳輸損耗之測量。作為於頻率20GHz 之傳輸損耗之評價,將未達3.7dB/10cm設為◎,將3.7dB/10cm以上且未達4.1dB/10cm設為○,將4.1dB/10cm以上且未達5.0dB/10cm設為△,將5.0dB/10cm以上設為×。 A resin substrate (LCP: liquid crystal polymer resin (Vecstar CTZ-50 μm manufactured by Kuraray Co., Ltd.), polyimide: 50 μm manufactured by Kaneka, and a fluororesin thickness 50 μm were bonded to each sample having a thickness of 18 μm: After Dupont), a microstrip line was formed by etching so that the characteristic impedance became 50Ω. The transmission coefficient was measured using a network analyzer HP8720C manufactured by HP, and the transmission loss was calculated at a frequency of 20 GHz and a frequency of 40 GHz. In addition, in Examples 7 to 10, the surface of the ultra-thin copper layer side of the copper foil with a carrier was bonded to the resin substrate described in Table 1, the carrier was peeled off, and then copper plating was performed to form an ultra-thin copper layer After the total thickness with copper plating was set to 18 μm, the same transmission loss measurement was performed as described above. As a frequency of 20GHz The evaluation of transmission loss is set to ◎ for less than 3.7dB / 10cm, ○ for 3.7dB / 10cm or more and less than 4.1dB / 10cm, and △ for 4.1dB / 10cm or more and less than 5.0dB / 10cm. Let × be 5.0dB / 10cm or more.
又,作為比較例,將相同之結果示於表1。 Moreover, as a comparative example, the same result is shown in Table 1.
再者,表1之一次粒子電流條件欄中記載有2個電流條件、庫侖量之例係意指於左側記載之條件下進行鍍敷後,於右側記載之條件下進一步進行鍍敷。例如,於實施例1之一次粒子電流條件欄中記載為「(65A/dm2、80As/dm2)+(20A/dm2、30As/dm2)」時,其係表示將形成一次粒子之電流密度設為65A/dm2、將庫侖量設為80As/dm2而進行鍍敷後,進而將形成一次粒子之電流密度設為20A/dm2、將庫侖量設為30As/dm2而進行鍍敷。 In addition, the example in which two current conditions and the coulomb amount are listed in the primary particle current condition column of Table 1 means that after plating is performed under the conditions described on the left, further plating is performed under the conditions described on the right. For example, when "(65A / dm 2 , 80As / dm 2 ) + (20A / dm 2 , 30As / dm 2 )" is described in the column for the condition of the primary particle current in Example 1, it means that the primary particle will be formed. after the current density was 65A / dm 2, the coulomb amount to 80As / dm 2 and plating, thus forming primary particles of the current density is set to 20A / dm 2, the coulomb amount to 30As / dm 2 and for Plating.
根據表1可揭明本發明之實施例之結果係如下所述。 The results of the embodiments of the present invention according to Table 1 are as follows.
實施例1係如下情況:將形成一次粒子之電流密度設為65A/dm2與20A/dm2,將庫侖量設為80As/dm2與30As/dm2,並將形成二次粒子之電流密度設為28A/dm2,將庫侖量設為20As/dm2。 Example 1 based the following: the formation of the primary particles of the current density is set to 65A / dm 2 to 20A / dm 2, the coulomb amount to 80As / dm 2 and 30As / dm 2, the current density and the formation of secondary particles It was set to 28 A / dm 2 , and the coulomb amount was set to 20 As / dm 2 .
再者,形成一次粒子之電流密度與庫侖量成為2階段,於通常形成一次粒子之情形時,必需2階段之電鍍。即,係第1階段之核粒子形成之鍍敷條件與第2階段之核粒子之成長之電鍍。 In addition, the current density and the coulomb amount forming the primary particles are in two stages. When the primary particles are usually formed, two-stage plating is necessary. That is, the plating conditions for the formation of the nuclear particles in the first stage and the plating for the growth of the nuclear particles in the second stage.
最初之鍍敷條件係用於第1階段之核形成粒子形成之電鍍條件,下一鍍敷條件係用於第2階段之核粒子之成長之電鍍條件。以下實施例及比較例亦同樣,因此省略說明。 The initial plating conditions are plating conditions for the formation of nuclear-forming particles in the first stage, and the next plating conditions are plating conditions for the growth of nuclear particles in the second stage. The following examples and comparative examples are also the same, so descriptions are omitted.
其結果,一次粒子之平均粒徑為0.45μm,二次粒子之平均粒徑為0.30μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為2689,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.45 μm, the average particle diameter of the secondary particles was 0.30 μm, and the average value of the uneven height of the roughened surface obtained by the laser microscope was 2689, which satisfies the conditions of the present invention.
其結果,具備如下特徵:落粉少,常態剝離強度為較高之1.16kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將該差設為劣化率)為較小之30%以下。 As a result, it has the following characteristics: less falling powder, higher normal peeling strength of 1.16 kg / cm, and heat resistance degradation rate (after normal peeling measurement, the peeling strength after heating at 180 ° C for 48 hours is measured, and the difference is (Deterioration rate) is less than 30%.
再者,耐熱劣化率係利用以下之式求出。 The heat resistance degradation rate was determined by the following formula.
耐熱劣化率(%)=(常態剝離強度(kg/cm)-於180℃加熱48小時後之剝離強度(kg/cm))/常態剝離強度(kg/cm)×100 Thermal degradation rate (%) = (normal peeling strength (kg / cm)-peeling strength (kg / cm) after heating at 180 ° C for 48 hours) / normal peeling strength (kg / cm) × 100
實施例2係如下情況:將形成一次粒子之電流密度設為65A/dm2與2A/dm2,將庫侖量設為80As/dm2與4As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為15As/dm2。 Example 2 is as follows: the current density of the primary particles is set to 65A / dm 2 and 2A / dm 2 , the coulomb amount is 80As / dm 2 and 4As / dm 2 , and the current density of the secondary particles is set. It was set to 25 A / dm 2 , and the coulomb amount was set to 15 As / dm 2 .
其結果,一次粒子之平均粒徑為0.40μm,二次粒子之平均粒徑為0.15μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1556,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.40 μm, the average particle diameter of the secondary particles was 0.15 μm, and the average value of the unevenness of the roughened surface obtained by the laser microscope was 1556, which satisfies the conditions of the present invention.
其結果,具備如下特徵:無落粉,常態剝離強度為較高之1.08kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, it has the following characteristics: no powder falling, normal peel strength is 1.08 kg / cm, heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set (Deterioration rate) is less than 30%.
實施例3係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 3 is the case where the current density of forming primary particles is set to 60 A / dm 2 and 10 A / dm 2 , the coulomb amount is set to 80 As / dm 2 and 20 As / dm 2 , and the current density of forming secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1809,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the uneven height obtained by the laser microscope on the roughened surface was 1809, which satisfies the conditions of the present invention.
具備如下特徵:無落粉;常態剝離強度為較高之0.92kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder falling; normal peel strength is 0.92kg / cm, and the heat resistance degradation rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as Deterioration rate) is less than 30%.
實施例4係如下情況:將形成一次粒子之電流密度設為55A/dm2與1A/dm2,將庫侖量設為75As/dm2與5As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 4 is the case where the current density of primary particles is set to 55A / dm 2 and 1A / dm 2 , the coulomb amount is set to 75As / dm 2 and 5As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1862,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface using a laser microscope was 1862, which satisfies the conditions of the present invention.
具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性 劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 Has the following characteristics: no falling powder, normal peel strength is 0.94kg / cm, heat resistance The deterioration rate (after the normal peeling measurement, the peel strength after heating at 180 ° C. for 48 hours was measured, and the difference was set as the deterioration rate) was 30% or less.
實施例5係如下情況:將形成一次粒子之電流密度設為50A/dm2與5A/dm2,將庫侖量設為70As/dm2與10As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 5 is the case where the current density of primary particles is set to 50A / dm 2 and 5A / dm 2 , the coulomb amount is 70As / dm 2 and 10As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1857,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface using a laser microscope was 1857, which satisfies the conditions of the present invention. Has the following characteristics: no falling powder, normal peel strength is 0.94kg / cm, heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate ) Is less than 30%.
實施例6係如下情況:將形成一次粒子之電流密度設為60A/dm2與15A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子(二次粒子層)之電流密度設為20A/dm2,將庫侖量設為60As/dm2而進行被覆鍍敷(正常鍍敷)後,進而將電流密度設為20A/dm2,將庫侖量設為20As/dm2而形成粒子。 Example 6 is a case where the current density of primary particles is set to 60 A / dm 2 and 15 A / dm 2 , the coulomb amount is set to 80 As / dm 2 and 20 As / dm 2 , and secondary particles (secondary Particle layer) The current density was set to 20 A / dm 2 , and the Coulomb amount was set to 60 As / dm 2 to perform plating (normal plating), and then the current density was set to 20 A / dm 2 , and the Coulomb amount was set to 20As / dm 2 to form particles.
其結果,一次粒子之平均粒徑為0.35μm,二次粒子成為被覆(正常)鍍敷狀態(粒徑未達0.1μm)及平均粒徑0.15μm之2階段構成,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1752,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.83kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.35 μm, and the secondary particles had a two-stage structure of a coated (normal) plating state (particle diameter less than 0.1 μm) and an average particle diameter of 0.15 μm. The average value of the uneven height of the chemically treated surface is 1752, which satisfies the conditions of the present invention. Has the following characteristics: no falling powder, normal peel strength is 0.83kg / cm, heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate ) Is less than 30%.
實施例7係如下情況:將形成一次粒子之電流密度設為65A /dm2與2A/dm2,將庫侖量設為80As/dm2與4As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為15As/dm2。 Example 7 is the case where the current density of forming primary particles is set to 65A / dm 2 and 2A / dm 2 , the coulomb amount is set to 80As / dm 2 and 4As / dm 2 , and the current density of forming secondary particles is set. It was set to 25 A / dm 2 , and the coulomb amount was set to 15 As / dm 2 .
其結果,一次粒子之平均粒徑為0.41μm,二次粒子之平均粒徑為0.16μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1560,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.41 μm, the average particle diameter of the secondary particles was 0.16 μm, and the average value of the unevenness of the roughened surface obtained by the laser microscope was 1560, which satisfied the conditions of the present invention.
其結果,具備如下特徵:無落粉,常態剝離強度為較高之1.09kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, it has the following characteristics: no powder falling, normal peeling strength is 1.09 kg / cm, heat resistance degradation rate (after normal peeling measurement, peeling strength after heating at 180 ° C for 48 hours is measured, and the difference is set (Deterioration rate) is less than 30%.
實施例8係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 8 is the case where the current density of primary particles is set to 60A / dm 2 and 10A / dm 2 , the coulomb amount is set to 80As / dm 2 and 20As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.31μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1814,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.31 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the uneven height obtained by the laser microscope on the roughened surface was 1814, which satisfies the conditions of the present invention.
具備如下特徵:無落粉;常態剝離強度為較高之0.93kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder falling; normal peel strength is 0.93kg / cm, and heat resistance degradation rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as Deterioration rate) is less than 30%.
實施例9係如下情況:將形成一次粒子之電流密度設為55A/dm2與1A/dm2,將庫侖量設為75As/dm2與5As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 9 is the case where the current density of primary particles is set to 55A / dm 2 and 1A / dm 2 , the coulomb amount is set to 75As / dm 2 and 5As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.26μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1866,滿足 本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.26 μm, and the average height of the roughened surface using a laser microscope was 1866, which was satisfied. Conditions of the invention of this case.
具備如下特徵:無落粉,常態剝離強度為較高之0.95kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 Has the following characteristics: no falling powder, normal peel strength is 0.95kg / cm, heat resistance degradation rate (after the normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate ) Is less than 30%.
實施例10係如下情況:將形成一次粒子之電流密度設為50A/dm2與5A/dm2,將庫侖量設為70As/dm2與10As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 10 is a case where the current density of primary particles is set to 50A / dm 2 and 5A / dm 2 , the coulomb amount is set to 70As / dm 2 and 10As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1858,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface using a laser microscope was 1858, which satisfies the conditions of the present invention. Has the following characteristics: no falling powder, normal peel strength is 0.94kg / cm, heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate ) Is less than 30%.
實施例11係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 11 is a case where the current density of primary particles is set to 60 A / dm 2 and 10 A / dm 2 , the coulomb amount is set to 80 As / dm 2 and 20 As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1808,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the uneven height obtained by the laser microscope on the roughened surface was 1808, which satisfies the conditions of the present invention.
具備如下特徵:無落粉;常態剝離強度為較高之0.93kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder falling; normal peel strength is 0.93kg / cm, and heat resistance degradation rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as Deterioration rate) is less than 30%.
實施例12係如下情況:將形成一次粒子之電流密度設為55A /dm2與1A/dm2,將庫侖量設為75As/dm2與5As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 12 is a case where the current density of primary particles is set to 55A / dm 2 and 1A / dm 2 , the coulomb amount is set to 75As / dm 2 and 5As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1861,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface using a laser microscope was 1861, which satisfies the conditions of the present invention.
具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 Has the following characteristics: no falling powder, normal peel strength is 0.94kg / cm, heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate ) Is less than 30%.
實施例13係如下情況:將形成一次粒子之電流密度設為50A/dm2與5A/dm2,將庫侖量設為70As/dm2與10As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 13 is the case where the current density of primary particles is set to 50A / dm 2 and 5A / dm 2 , the coulomb amount is 70As / dm 2 and 10As / dm 2 , and the current density of secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1858,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface using a laser microscope was 1858, which satisfies the conditions of the present invention. Has the following characteristics: no falling powder, normal peel strength is 0.94kg / cm, heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate ) Is less than 30%.
實施例14係如下情況:將形成一次粒子之電流密度設為60A/dm2與15A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子(二次粒子層)之電流密度設為20A/dm2,將庫侖量設為60As/dm2而進行被覆鍍敷(正常鍍敷)後,進而將電流密度設為20A/dm2,將庫侖量設為20As/dm2而形成粒子。 Example 14 is a case where the current density of primary particles is set to 60A / dm 2 and 15A / dm 2 , the coulomb amount is set to 80As / dm 2 and 20As / dm 2 , and secondary particles are formed (secondary Particle layer) The current density was set to 20 A / dm 2 , and the Coulomb amount was set to 60 As / dm 2 to perform plating (normal plating), and then the current density was set to 20 A / dm 2 , and the Coulomb amount was set to 20As / dm 2 to form particles.
其結果,一次粒子之平均粒徑為0.35μm,二次粒子成為被覆(正常) 鍍敷狀態(粒徑未達0.1μm)及平均粒徑0.15μm之2階段構成,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1751,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.84kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.35 μm, and the secondary particles became coated (normal). The two-stage configuration of the plating state (particle diameter is less than 0.1 μm) and the average particle diameter of 0.15 μm. The average value of the uneven height of the roughened surface obtained by a laser microscope is 1751, which satisfies the conditions of the present invention. It has the following characteristics: no falling powder, normal peel strength is 0.84kg / cm, heat resistance degradation rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate ) Is less than 30%.
實施例15係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2。 Example 15 is a case where the current density of forming primary particles is set to 60 A / dm 2 and 10 A / dm 2 , the coulomb amount is set to 80 As / dm 2 and 20 As / dm 2 , and the current density of forming secondary particles is set. It was set to 25 A / dm 2 and the coulomb amount was set to 30 As / dm 2 .
其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1805,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the uneven height obtained by the laser microscope on the roughened surface was 1805, which satisfies the conditions of the present invention.
具備如下特徵:無落粉;常態剝離強度為較高之0.93kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder falling; normal peel strength is 0.93kg / cm, and heat resistance degradation rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as Deterioration rate) is less than 30%.
相對於此,比較例係如下結果。 In contrast, the comparative example has the following results.
比較例1係如下情況:將形成一次粒子之電流密度設為63A/dm2與10A/dm2,將庫侖量設為80As/dm2與30As/dm2,並無形成二次粒子。其結果,一次粒子之平均粒徑為0.50μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為2001,滿足本案發明之條件。無落粉,常態剝離強度為較高之1.38kg/cm,為實施例等級。然而,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將該差設為劣化率)為60%,明顯較差。作為整體高頻電路用銅箔之評價不良。 Comparative Example 1 is a case where the current density of primary particles was set to 63 A / dm 2 and 10 A / dm 2 , and the coulomb amount was set to 80 As / dm 2 and 30 As / dm 2 , and no secondary particles were formed. As a result, the average particle diameter of the primary particles was 0.50 μm, and the average value of the uneven height obtained by the laser microscope on the roughened surface was 2001, which satisfies the conditions of the present invention. There is no powder falling, and the normal peeling strength is 1.38 kg / cm, which is an example level. However, the deterioration rate of heat resistance (after the normal peeling measurement, the peel strength after heating at 180 ° C. for 48 hours was measured, and the difference was set as the deterioration rate) was 60%, which was significantly inferior. The overall evaluation of copper foil for high-frequency circuits was poor.
比較例2表示不存在一次粒徑而僅為二次粒子層之習知例。即,係將形成二次粒子之電流密度設為50A/dm2,將庫侖量設為30As/dm2之情況。 Comparative Example 2 shows a conventional example in which there is no primary particle size and only a secondary particle layer. That is, it is a case where the current density for forming secondary particles is 50 A / dm 2 and the coulomb amount is 30 As / dm 2 .
其結果,二次粒子之平均粒徑為0.30μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為294,未滿足本發明之條件。 As a result, the average particle diameter of the secondary particles was 0.30 μm, and the average value of the height obtained by the laser microscope on the roughened surface was 294, which did not satisfy the conditions of the present invention.
粗化粒子之產生大量落粉。常態剝離強度為較高之1.25kg/cm、耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下,為實施例等級。如上所述,存在產生大量落粉之問題,因此作為整體高頻電路用銅箔之綜合評價不良。 Coarse particles produce a large amount of falling powder. Normal peel strength is 1.25 kg / cm, and heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate) is less than 30% Is the embodiment level. As described above, there is a problem that a large amount of powder falls, so the overall evaluation of the copper foil for high-frequency circuits as a whole is poor.
比較例3係如下情況:將形成一次粒子之電流密度設為63A/dm2與1A/dm2,將庫侖量設為80As/dm2與2As/dm2,並將形成二次粒子之電流密度設為28A/dm2,將庫侖量設為73As/dm2。 Comparative Example 3 is a case where the current density of primary particles is set to 63A / dm 2 and 1A / dm 2 , the coulomb amount is 80As / dm 2 and 2As / dm 2 , and the current density of secondary particles is set. It was set to 28 A / dm 2 , and the coulomb amount was set to 73 As / dm 2 .
其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.60μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1298,未滿足本發明之條件。產生大量落粉。常態剝離強度為較高之1.42kg/cm、耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下,為實施例等級,但產生大量落粉。作為整體高頻電路用銅箔之評價不良。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.60 μm, and the average value of the unevenness of the roughened surface obtained by the laser microscope was 1298, which did not satisfy the conditions of the present invention. Generates a large amount of falling powder. Normal peel strength is 1.42 kg / cm, and heat resistance degradation rate (after normal peel measurement, peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate) is less than 30% , Which is the example level, but generates a large amount of falling powder. The overall evaluation of copper foil for high-frequency circuits was poor.
比較例4係如下情況:將形成一次粒子之電流密度設為63A/dn2與1A/dm2,將庫侖量設為80As/dm2與2As/dm2,並將形成二次粒子之電流密度設為31A/dm2,將庫侖量設為40As/dm2。 Comparative Example 4 is a case where the current density of primary particles is set to 63A / dn 2 and 1A / dm 2 , the coulomb amount is 80As / dm 2 and 2As / dm 2 , and the current density of secondary particles is set. It was set to 31 A / dm 2 and the coulomb amount was set to 40 As / dm 2 .
其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為 0.40μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1227,未滿足本發明之條件。 As a result, the average particle diameter of the primary particles was 0.35 μm, and the average particle diameter of the secondary particles was 0.40 μm, the average height of the roughened surface obtained by a laser microscope was 1227, which did not satisfy the conditions of the present invention.
常態剝離強度為較高之1.37kg/cm、耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下,為實施例等級,但產生大量落粉。作為整體高頻電路用銅箔之評價不良。 The normal peel strength is 1.37 kg / cm, and the heat resistance degradation rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is the degradation rate) is less than 30% , Which is the example level, but generates a large amount of falling powder. The overall evaluation of copper foil for high-frequency circuits was poor.
比較例5係如下情況:將形成一次粒子之電流密度設為40A/dm2與1A/dm2,將庫侖量設為40As/dm2與2As/dm2,並將形成二次粒子之電流密度設為20A/dm2,將庫侖量設為20As/dm2。 Comparative Example 5 is a case where the current density of primary particles is set to 40A / dm 2 and 1A / dm 2 , the coulomb amount is set to 40As / dm 2 and 2As / dm 2 , and the current density of secondary particles is set. It was set to 20 A / dm 2 , and the coulomb amount was set to 20 As / dm 2 .
其結果,一次粒子之平均粒徑為0.15μm,二次粒子之平均粒徑為0.15μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1367,未滿足本發明之條件。落粉未產生。又,常態剝離強度為0.71kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為35%。 As a result, the average particle diameter of the primary particles was 0.15 μm, the average particle diameter of the secondary particles was 0.15 μm, and the average value of the uneven height of the roughened surface obtained by the laser microscope was 1367, which did not satisfy the conditions of the present invention. Falling powder did not occur. The normal peel strength was 0.71 kg / cm, and the heat resistance degradation rate (the peel strength after heating at 180 ° C. for 48 hours after the normal peel measurement was measured, and the difference was set as the degradation rate) was 35%.
根據上述實施例及比較例之對比可揭明,於在銅箔(原箔)之表面形成銅之一次粒子層後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金形成之二次粒子層之情形時,於粗化處理面之一定區域之利用雷射顯微鏡獲得之測量解析中,將粗化處理面之凹凸高度的平均值設為1500以上,藉此可具有能夠穩定地抑制稱為落粉之現象之優異效果,進而,提高剝離強度且提高高頻特性。 According to the comparison between the above examples and comparative examples, it can be revealed that after a primary particle layer of copper is formed on the surface of a copper foil (original foil), a ternary alloy composed of copper, cobalt, and nickel is formed on the primary particle layer. In the case of the formed secondary particle layer, in a measurement analysis obtained by a laser microscope in a certain region of the roughened surface, the average value of the height of the unevenness of the roughened surface is set to 1500 or more. The excellent effect of stably suppressing the phenomenon called powder falling is further improved, and the peeling strength is improved and the high-frequency characteristics are improved.
又,將一次粒子層之平均粒徑設為0.25~0.45μm、將由銅、鈷及鎳構成之三元系合金形成之二次粒子層的平均粒徑設為0.35μm以下可達成上 述效果,並且進而有效。 The average particle diameter of the primary particle layer is 0.25 to 0.45 μm, and the average particle diameter of the secondary particle layer made of a ternary alloy made of copper, cobalt, and nickel is 0.35 μm or less. Said effect, and further effective.
再者,於耐熱處理層含有Co之情形時,有傳輸損耗變大之傾向。 When Co is contained in the heat-resistant treatment layer, the transmission loss tends to increase.
圖9表示顯示實施例1之高度直方圖之平均值(凹凸高度)之利用解析軟體KVH1A9獲得之解析結果的電腦畫面之圖像。於圖9中,高度直方圖之平均值(凹凸高度)係讀取右上之表(濃度測量)之項目「平均」(此處表示為2688.98)所得者。 FIG. 9 shows an image of a computer screen showing the analysis result obtained by the analysis software KVH1A9, which is the average value (convex height) of the height histogram of Example 1. FIG. In FIG. 9, the average value (concave-convex height) of the height histogram is obtained by reading the item “average” (here, expressed as 2688.98) in the upper right table (concentration measurement).
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| JP2014080586A JP2014224313A (en) | 2013-04-26 | 2014-04-09 | Copper foil for high-frequency circuit, copper-clad laminate for high-frequency circuit, printed wiring board for high-frequency circuit, copper foil with carrier for high-frequency circuit, electronic device, and method for manufacturing printed wiring board |
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| JP6487704B2 (en) * | 2015-02-12 | 2019-03-20 | 福田金属箔粉工業株式会社 | Treated copper foil, copper-clad laminate using the treated copper foil, and printed wiring board |
| WO2016174998A1 (en) | 2015-04-28 | 2016-11-03 | 三井金属鉱業株式会社 | Roughened copper foil and printed wiring board |
| JP6083619B2 (en) * | 2015-07-29 | 2017-02-22 | 福田金属箔粉工業株式会社 | Processed copper foil for low dielectric resin substrate, copper-clad laminate and printed wiring board using the treated copper foil |
| WO2017026490A1 (en) * | 2015-08-12 | 2017-02-16 | 古河電気工業株式会社 | Copper foil for high-frequency circuit, copper-clad laminate sheet, and printed-wiring board |
| US10448507B2 (en) | 2016-01-15 | 2019-10-15 | Jx Nippon Mining & Metals Corporation | Copper foil, copper-clad laminate board, method for producing printed wiring board, method for producing electronic apparatus, method for producing transmission channel, and method for producing antenna |
| CN112291935A (en) * | 2020-10-20 | 2021-01-29 | 深圳爱彼电路股份有限公司 | An ultra-small size and ultra-thin high-frequency circuit board manufacturing method |
| CN112867239A (en) * | 2021-01-12 | 2021-05-28 | 深圳市鑫诺诚科技有限公司 | Ultra-thick and low-resistance copper foil material |
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| JP2002292788A (en) * | 2001-03-30 | 2002-10-09 | Nippon Denkai Kk | Composite copper foil and method for manufacturing the same |
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| TW201446489A (en) | 2014-12-16 |
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