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TW201446489A - Copper foil, copper-clad laminated plate, printed wiring board and carrier-attached copper foil for high-frequency circuit, electronic machine and manufacturing method of printed wiring board - Google Patents

Copper foil, copper-clad laminated plate, printed wiring board and carrier-attached copper foil for high-frequency circuit, electronic machine and manufacturing method of printed wiring board Download PDF

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TW201446489A
TW201446489A TW103113621A TW103113621A TW201446489A TW 201446489 A TW201446489 A TW 201446489A TW 103113621 A TW103113621 A TW 103113621A TW 103113621 A TW103113621 A TW 103113621A TW 201446489 A TW201446489 A TW 201446489A
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layer
copper foil
copper
carrier
plating
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TW103113621A
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TWI632054B (en
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Hideta Arai
Ryo Fukuchi
Atsushi Miki
Tomota Nagaura
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Jx Nippon Mining & Metals Corp
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
    • H05K3/205Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/562Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10Electroplating with more than one layer of the same or of different metals
    • C25D5/12Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H05K3/025Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0723Electroplating, e.g. finish plating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention provides a copper foil for high-frequency circuit capable of satisfactorily inhibiting transmission loss and also satisfactorily depressing generation of dropped powders on the surface of the copper foil even when it is used for a high-frequency circuit board. In order to provide the copper foil for high-frequency circuit in accordance with the present invention, a primary particle layer of copper is formed on the surface of a copper foil, and then a secondary particle layer of ternary alloy formed by copper, cobalt and nickel is formed on the primary particle layer, thereby forming the copper foil. The unevenness height of a coarsened surface obtained by using a laser microscope has an average value which is greater than 1500.

Description

高頻電路用銅箔、高頻電路用覆銅積層板、高頻電路用印刷配線板、高頻電路用附載體銅箔、電子機器、及印刷配線板之製造方法 Copper foil for high-frequency circuit, copper-clad laminate for high-frequency circuit, printed wiring board for high-frequency circuit, copper foil with high-frequency circuit, electronic device, and manufacturing method of printed wiring board

本發明係關於一種高頻電路用銅箔、高頻電路用覆銅積層板、高頻電路用印刷配線板、高頻電路用附載體銅箔、電子機器、及印刷配線板之製造方法。 The present invention relates to a copper foil for a high-frequency circuit, a copper-clad laminate for a high-frequency circuit, a printed wiring board for a high-frequency circuit, a copper foil with a carrier for a high-frequency circuit, an electronic device, and a method for producing a printed wiring board.

印刷配線板於此半個世紀取得了較大發展,目前已用於幾乎所有電子機器中。近年來,隨著電子機器之小型化、高性能化需求之增大,搭載零件之高密度安裝化或訊號之高頻化逐步推進,對於印刷配線板要求優異之高頻對應。 Printed wiring boards have made great progress in this half century and are now used in almost all electronic machines. In recent years, with the increase in the demand for miniaturization and high performance of electronic equipment, the high-density mounting of components and the high-frequency of signals have been gradually advanced, and high-frequency correspondence is required for printed wiring boards.

為了確保輸出訊號之品質,對高頻用基板要求傳輸損耗之減少。傳輸損耗主要包括由樹脂(基板側)引起之介電體損耗、及由導體(銅箔側)引起之導體損耗。樹脂之介電常數及介電損耗正切越小,介電體損耗越少。於高頻訊號中,導體損耗之主要原因在於:因頻率越高電流越僅於導體之表面流動之集膚效應而使電流流動之截面積減少、電阻提高。 In order to ensure the quality of the output signal, the transmission loss of the high frequency substrate is required. The transmission loss mainly includes dielectric loss caused by the resin (substrate side) and conductor loss caused by the conductor (copper foil side). The smaller the dielectric constant and dielectric loss tangent of the resin, the less the dielectric loss. In the high-frequency signal, the main reason for the conductor loss is that the higher the frequency, the more the current flows on the surface of the conductor, and the cross-sectional area of the current flow is reduced and the resistance is improved.

作為以減少高頻用銅箔之傳輸損耗為目的之技術,例如於專利文獻1中揭示一種高頻電路用金屬箔,其於金屬箔表面之單面或雙面被 覆銀或銀合金,於該銀或銀合金被覆層上,較上述銀或銀合金被覆層之厚度更薄地施加銀或銀合金以外之被覆層。並且,記載有藉此可提供即便於如衛星通訊中使用之超高頻區域中亦減少由集膚效應引起之損耗的金屬箔。 As a technique for reducing the transmission loss of the high-frequency copper foil, for example, Patent Document 1 discloses a metal foil for a high-frequency circuit which is one-sided or double-sided on the surface of the metal foil. A silver or silver alloy is applied to the silver or silver alloy coating layer, and a coating layer other than silver or a silver alloy is applied to the thickness of the silver or silver alloy coating layer. Further, it is described that the metal foil which reduces the loss due to the skin effect even in the ultra-high frequency region used in satellite communication can be provided.

又,專利文獻2中揭示一種高頻電路用粗化處理壓延銅箔,其特徵在於:壓延銅箔之再結晶退火後之壓延面上之利用X射線繞射求出之(200)面之積分強度(I(200))相對於微粉末銅之利用X射線繞射求出之(200)面之積分強度(I0(200))即I(200)/I0(200)>40,對該壓延面進行利用電解鍍敷之粗化處理後之粗化處理面之算術平均粗糙度(以下設為Ra)為0.02μm~0.2μm,十點平均粗糙度(以下設為Rz)為0.1μm~1.5μm,並且其為印刷電路基板用原材料。並且,記載有藉此可提供可於超過1GHz之高頻下使用之印刷電路板。 Further, Patent Document 2 discloses a roughened copper foil for roughening a high-frequency circuit, which is characterized in that (200) plane integral obtained by X-ray diffraction on a rolling surface after recrystallization annealing of a rolled copper foil The intensity (I(200)) is the integrated strength (I0(200)) of the (200) plane obtained by X-ray diffraction with respect to the fine powder copper, that is, I(200)/I0(200)>40, the calendering The arithmetic mean roughness (hereinafter referred to as Ra) of the roughened surface after the roughening treatment by electrolytic plating is 0.02 μm to 0.2 μm, and the ten point average roughness (hereinafter referred to as Rz) is 0.1 μm to 1.5. Μm, and it is a raw material for a printed circuit board. Further, it is described that a printed circuit board which can be used at a high frequency exceeding 1 GHz can be provided.

進而,專利文獻3中揭示一種電解銅箔,其特徵在於:銅箔之表面之一部分為由結瘤狀突起構成之表面粗糙度為2μm~4μm之凹凸面。並且,記載有藉此可提供高頻傳輸特性優異之電解銅箔。 Further, Patent Document 3 discloses an electrolytic copper foil characterized in that one of the surfaces of the copper foil is an uneven surface having a surface roughness of 2 μm to 4 μm composed of nodular protrusions. Further, an electrolytic copper foil excellent in high-frequency transmission characteristics can be provided.

[專利文獻1]日本專利第4161304號公報 [Patent Document 1] Japanese Patent No. 4161304

[專利文獻2]日本專利第4704025號公報 [Patent Document 2] Japanese Patent No. 4704025

[專利文獻3]日本特開2004-244656號公報 [Patent Document 3] Japanese Laid-Open Patent Publication No. 2004-244656

已知由導體(銅箔側)引起之導體損耗之原因在於如上所述般因集膚效應而使電阻變大,但該電阻不僅存在銅箔本身之電阻之影響, 亦存在藉由於銅箔表面為了確保與樹脂基板之接著性而進行之粗化處理形成的表面處理層之電阻之影響,具體而言,銅箔表面之粗糙度為導體損耗之主要因素,粗糙度越小傳輸損耗越減少。 It is known that the conductor loss caused by the conductor (copper foil side) is caused by the skin effect as described above, but the resistance is not only affected by the resistance of the copper foil itself, There is also an influence of the surface treatment layer formed by the roughening treatment of the surface of the copper foil to ensure adhesion to the resin substrate. Specifically, the roughness of the surface of the copper foil is a main factor of the conductor loss, and the roughness The smaller the transmission loss, the smaller.

本發明者對銅箔表面之粗糙度與傳輸損耗之關係進一步進行了深入研究,結果發現:銅箔表面之粗糙度越小未必傳輸損耗越減少,尤其是若銅箔表面之粗糙度減小至某一程度,則於傳輸損耗之減少與銅箔表面之粗糙度之關係上可見明顯之波動,難以僅藉由控制銅箔表面之粗糙度而良好地減少傳輸損耗。 The inventors further studied the relationship between the roughness of the surface of the copper foil and the transmission loss, and found that the smaller the roughness of the surface of the copper foil, the less the transmission loss is, especially if the roughness of the surface of the copper foil is reduced to To some extent, significant fluctuations in the relationship between the reduction in transmission loss and the roughness of the surface of the copper foil are observed, and it is difficult to reduce the transmission loss well by merely controlling the roughness of the surface of the copper foil.

又,作為銅箔表面之粗化處理,已知形成鈷-鎳合金鍍層,關於習知之形成有鈷-鎳合金鍍層之銅箔,由於形成於其表面之由銅-鈷-鎳合金鍍敷構成之粗化粒子之形狀為樹枝狀,故而會產生自該樹枝之上部或根部剝離脫落、通常稱為落粉現象之問題。 Further, as a roughening treatment of the surface of the copper foil, it is known to form a cobalt-nickel alloy plating layer, and a copper foil having a cobalt-nickel alloy plating layer formed thereon is formed of a copper-cobalt-nickel alloy plating layer formed on the surface thereof. The shape of the roughened particles is dendritic, and thus there is a problem that peeling off from the upper portion or the root portion of the branch, which is generally called a falling powder phenomenon.

該落粉現象為麻煩之問題,雖銅-鈷-鎳合金鍍敷之粗化處理層具有耐熱性優異之特徵,但粒子容易因外力而脫落,從而出現如下問題:產生由處理中之「摩擦」引起之剝離、由剝離粉引起之輥之髒污、由剝離粉引起之蝕刻殘渣。 The powder falling phenomenon is a problem of trouble. Although the roughened layer of the copper-cobalt-nickel alloy plating has the characteristics of excellent heat resistance, the particles are easily peeled off due to external force, and the following problem occurs: generation of "friction" by the treatment The peeling caused by the peeling, the dirt caused by the peeling powder, and the etching residue caused by the peeling powder.

因此,本發明之目的在於提供一種即便用於高頻電路基板亦可良好地抑制傳輸損耗,並且良好地抑制形成於銅箔表面之粗化粒子自該表面剝離脫落之現象即所謂「落粉」之產生的高頻電路用銅箔。 Therefore, an object of the present invention is to provide a phenomenon in which a high-frequency circuit substrate can be satisfactorily suppressed from transmission loss, and a phenomenon in which roughened particles formed on a surface of a copper foil are peeled off from the surface is suppressed. The resulting high-frequency circuit is made of copper foil.

本發明者發現對於抑制用於高頻電路基板時之傳輸損耗、及抑制銅箔表面之落粉極為有效的是:於附載體銅箔之極薄銅層表面形成特定之粗化粒子層,且控制該粗化粒子層表面之凹凸高度的平均值。 The present inventors have found that it is extremely effective for suppressing transmission loss when used for a high-frequency circuit substrate and suppressing powder falling on the surface of a copper foil by forming a specific roughened particle layer on the surface of an extremely thin copper layer of a copper foil with a carrier, and The average value of the uneven height of the surface of the roughened particle layer is controlled.

本發明係基於上述見解而完成者,於一態樣中係一種高頻電路用銅箔,其係於銅箔表面形成銅之一次粒子層之後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金之二次粒子層而成的銅箔,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1500以上。 The present invention is based on the above findings. In one aspect, a copper foil for a high-frequency circuit is formed by forming a primary particle layer of copper on a surface of a copper foil, and forming copper, cobalt, and In the copper foil obtained by the secondary particle layer of the ternary alloy composed of nickel, the average value of the unevenness height of the roughened surface obtained by the laser microscope is 1,500 or more.

本發明之高頻電路用銅箔於一實施形態中,該銅之一次粒子層的平均粒徑為0.25~0.45μm,由銅、鈷及鎳構成之三元系合金形成之二次粒子層的平均粒徑為0.35μm以下。 In one embodiment, the copper foil for high-frequency circuit of the present invention has an average particle diameter of the primary particle layer of copper of 0.25 to 0.45 μm, and a secondary particle layer formed of a ternary alloy composed of copper, cobalt, and nickel. The average particle diameter is 0.35 μm or less.

本發明之高頻電路用銅箔於另一實施形態中,該一次粒子層及二次粒子層為電鍍層。 In another embodiment of the copper foil for high-frequency circuit of the present invention, the primary particle layer and the secondary particle layer are electroplated layers.

本發明之高頻電路用銅箔於進而另一實施形態中,二次粒子為於該一次粒子上成長之1個或複數個樹枝狀粒子或於該一次粒子上成長之正常鍍層。 In still another embodiment of the copper foil for high-frequency circuit of the present invention, the secondary particles are one or a plurality of dendritic particles grown on the primary particles or a normal plating layer grown on the primary particles.

本發明之高頻電路用銅於進而另一實施形態中,利用雷射顯微鏡獲得之該粗化處理面之凹凸高度的平均值為1500以上2000以下。 In still another embodiment of the copper for high-frequency circuit of the present invention, the average value of the unevenness height of the roughened surface obtained by a laser microscope is 1,500 or more and 2,000 or less.

本發明之高頻電路用銅箔於進而另一實施形態中,一次粒子層及二次粒子層之剝離強度為0.80kg/cm以上。 In still another embodiment of the copper foil for high-frequency circuit of the present invention, the peeling strength of the primary particle layer and the secondary particle layer is 0.80 kg/cm or more.

本發明之高頻電路用銅箔於進而另一實施形態中,一次粒子層及二次粒子層之剝離強度為0.90kg/cm以上。 In still another embodiment of the copper foil for high-frequency circuit of the present invention, the peeling strength of the primary particle layer and the secondary particle layer is 0.90 kg/cm or more.

本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上形成有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及 (B)鉻酸鹽層之任一者或兩者。 In still another embodiment, the copper foil for high-frequency circuit of the present invention is formed on the secondary particle layer: (A) is made of Ni and is selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, and P. An alloy layer composed of one or more elements consisting of W, Mn, Sn, As, and Ti, and (B) either or both of the chromate layers.

本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上依序形成有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者,及矽烷偶合層。 In still another embodiment of the copper foil for high-frequency circuit of the present invention, (A) Ni and a selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, and Al are sequentially formed on the secondary particle layer. Any one or both of an alloy layer composed of one or more elements of P, W, Mn, Sn, As, and Ti, and (B) a chromate layer, and a decane coupling layer.

本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上形成有Ni-Zn合金層及鉻酸鹽層之任一者或兩者。 In still another embodiment of the copper foil for high-frequency circuit of the present invention, either or both of a Ni-Zn alloy layer and a chromate layer are formed on the secondary particle layer.

本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層上依序形成有:Ni-Zn合金層及鉻酸鹽層之任一者或兩者,及矽烷偶合層。 In still another embodiment of the copper foil for high-frequency circuit of the present invention, either or both of a Ni-Zn alloy layer and a chromate layer and a decane coupling are sequentially formed on the secondary particle layer. Floor.

本發明之高頻電路用銅箔於進而另一實施形態中,於該二次粒子層之表面具備樹脂層。 In still another embodiment of the copper foil for high-frequency circuit of the present invention, a resin layer is provided on the surface of the secondary particle layer.

本發明之高頻電路用銅箔於進而另一實施形態中,於該由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層、或該鉻酸鹽層、或該矽烷偶合層、或該Ni-Zn合金層之表面具備樹脂層。 In still another embodiment, the copper foil for high-frequency circuit of the present invention comprises Ni and a material selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As, and Ti. The alloy layer composed of one or more elements, or the chromate layer, or the decane coupling layer, or the surface of the Ni-Zn alloy layer is provided with a resin layer.

本發明於另一態樣中係一種附載體銅箔,係於載體之一面或 雙面依序具有中間層、極薄銅層者,該極薄銅層為本發明之高頻電路用銅箔。 In another aspect, the invention is a copper foil with a carrier attached to one side of the carrier or The double-sided layer has an intermediate layer and an extremely thin copper layer, and the ultra-thin copper layer is the copper foil for high-frequency circuits of the present invention.

本發明之附載體銅箔於一實施形態中,於該載體之一面依序具有該中間層、該極薄銅層,於該載體之另一面具有粗化處理層。 In one embodiment, the copper foil with a carrier of the present invention has the intermediate layer and the ultra-thin copper layer on one side of the carrier, and has a roughened layer on the other side of the carrier.

本發明於進而另一態樣中係一種高頻電路用覆銅積層板,其使用有本發明之銅箔。 In still another aspect of the invention, a copper-clad laminate for a high-frequency circuit using the copper foil of the invention is used.

本發明於進而另一態樣中係一種高頻電路用印刷配線板,其使用有本發明之銅箔。 In still another aspect of the invention, a printed wiring board for a high-frequency circuit using the copper foil of the invention is used.

本發明之高頻電路用覆銅積層板於一實施形態中,積層有該銅箔與聚醯亞胺、液晶聚合物或氟樹脂。 In one embodiment of the copper-clad laminate for high-frequency circuits of the present invention, the copper foil is laminated with a polyimide, a liquid crystal polymer or a fluororesin.

本發明於進而另一態樣中係本發明之高頻電路用印刷配線板,其使用有聚醯亞胺、液晶聚合物或氟樹脂之任一者。 In still another aspect of the invention, there is provided a printed wiring board for a high-frequency circuit of the invention, which comprises any one of a polyimide, a liquid crystal polymer or a fluororesin.

本發明於進而另一態樣中係一種電子機器,其使用有本發明之印刷配線板。 In still another aspect of the invention, an electronic apparatus using the printed wiring board of the invention is used.

本發明於進而另一態樣中係一種印刷配線板之製造方法,其含有如下步驟:準備本發明之附載體銅箔與絕緣基板;將該附載體銅箔與絕緣基板積層;及於將該附載體銅箔與絕緣基板積層後,經過將該附載體銅箔之載體剝離之步驟而形成覆銅積層板,然後,藉由半加成法、減成法、部分加成法或改良半加成法之任一種方法形成電路。 In still another aspect, the present invention provides a method of manufacturing a printed wiring board, comprising the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; laminating the copper foil with the carrier and the insulating substrate; After laminating the carrier copper foil and the insulating substrate, the copper-clad laminate is formed by the step of peeling off the carrier with the carrier copper foil, and then, by semi-additive method, subtractive method, partial addition method or modified half-addition Any method of forming a circuit forms a circuit.

本發明於進而另一態樣中係一種印刷配線板之製造方法,其含有如下步驟:於本發明之附載體銅箔的該極薄銅層側表面形成電路;以埋沒該電路之方式於該附載體銅箔之該極薄銅層側表面形成樹脂層於該樹脂層上形成電路;於該樹脂層上形成電路後,剝離該載體;及藉由在剝離該載體後去除該極薄銅層,而使形成於該極薄銅層側表面之埋沒於該樹脂層的電路露出。 In still another aspect, the present invention provides a method of manufacturing a printed wiring board, comprising the steps of: forming a circuit on a side surface of the ultra-thin copper layer of the copper foil with carrier of the present invention; a side surface of the ultra-thin copper layer with a carrier copper foil forming a resin layer forming a circuit on the resin layer; after forming a circuit on the resin layer, the carrier is peeled off; and removing the ultra-thin copper layer by peeling off the carrier The circuit buried in the resin layer on the side surface of the ultra-thin copper layer is exposed.

藉由本發明,可提供一種即便用於高頻電路基板亦可良好地抑制傳輸損耗,並且良好地抑制形成於銅箔表面之粗化粒子自該表面剝離脫落之現象即所謂「落粉」之產生的高頻電路用銅箔。 According to the present invention, it is possible to satisfactorily suppress the transmission loss even when used for a high-frequency circuit board, and to suppress the occurrence of the phenomenon that the roughened particles formed on the surface of the copper foil are peeled off from the surface, that is, the so-called "falling powder" The high frequency circuit uses copper foil.

圖1係表示於習知之銅箔上進行由銅-鈷-鎳合金鍍敷構成之粗化處理的情形時落粉之情況的概念說明圖。 Fig. 1 is a conceptual explanatory view showing a state in which powder is dropped in a case where a roughening treatment by copper-cobalt-nickel alloy plating is performed on a conventional copper foil.

圖2係本發明之於銅箔上預先形成一次粒子層、於該一次粒子層上形成由銅-鈷-鎳合金鍍敷構成之二次粒子層之無落粉之銅箔處理層的概念說明圖。 2 is a conceptual illustration of a copper foil-treated layer of a copper foil which is formed by pre-forming a primary particle layer on a copper foil and forming a secondary particle layer composed of a copper-cobalt-nickel alloy plating on the primary particle layer. Figure.

圖3係於習知之銅箔上進行由銅-鈷-鎳合金鍍敷構成之粗化處理之情形時表面的顯微鏡照片。 Fig. 3 is a photomicrograph of the surface of a conventional copper foil subjected to roughening treatment by copper-cobalt-nickel alloy plating.

圖4係本發明之於銅箔上預先形成一次粒子層、於該一次粒子層上形 成由銅-鈷-鎳合金鍍敷構成之二次粒子層之無落粉之銅箔處理面之層的顯微鏡照片。 4 is a pre-formed primary particle layer on a copper foil of the present invention, and formed on the primary particle layer A photomicrograph of a layer of a copper foil-treated surface of a secondary particle layer composed of a copper-cobalt-nickel alloy plating.

圖5之A~C係使用本發明之附載體銅箔的印刷配線板之製造方法之具體例的至鍍敷電路、去除抗蝕劑為止之步驟中之配線板剖面的示意圖。 A to C of Fig. 5 is a schematic view showing a cross section of the wiring board in the step of removing the resist from the plating circuit and the specific example of the method of manufacturing the printed wiring board with the carrier copper foil of the present invention.

圖6之D~F係使用本發明之附載體銅箔之印刷配線板之製造方法之具體例的自積層樹脂及第2層附載體銅箔至雷射開孔為止之步驟中之配線板剖面的示意圖。 FIG. 6 is a cross-sectional view of the wiring board in the step from the self-laminated resin and the second-layer carrier-attached copper foil to the laser opening using the specific example of the method for producing a printed wiring board with a carrier copper foil according to the present invention. Schematic diagram.

圖7之G~I係使用本發明之附載體銅箔之印刷配線板之製造方法之具體例的自形成通孔填充物至剝離第1層之載體為止之步驟中之配線板剖面的示意圖。 Fig. 7 is a schematic view showing a cross section of the wiring board in the step from the formation of the through-hole filler to the step of peeling off the carrier of the first layer, using a specific example of the method for producing a printed wiring board with a carrier copper foil according to the present invention.

圖8之J~K係使用本發明之附載體銅箔之印刷配線板之製造方法之具體例的自快速蝕刻至形成凸塊、銅柱為止之步驟中之配線板剖面的示意圖。 Fig. 8 is a schematic view showing a cross section of the wiring board in the step of forming a bump or a copper pillar in a specific example of the method for producing a printed wiring board with a carrier copper foil according to the present invention.

圖9係表示實施例1之高度直方圖之平均值(凹凸高度)之利用解析軟體KVH1A9獲得之解析結果的電腦畫面之圖像。 Fig. 9 is an image of a computer screen showing the analysis result obtained by the analysis software KVH1A9 of the average value (concave-convex height) of the height histogram of the first embodiment.

圖10係解析軟體KVH1A9之VK-8500用戶手冊4-3頁之「DISTANCE‧PITCH之設定」中揭示之操作畫面的例。 Fig. 10 is an example of an operation screen disclosed in "Setting of DISTANCE ‧ PITCH" on page 4-3 of the VK-8500 User's Manual of the KVH1A9 software.

可於本發明中使用之銅箔基材之形態並無特別限制,典型而言,本發明中使用之銅箔可為電解銅箔或壓延銅箔中任一者。通常,電解銅箔係利用硫酸銅鍍浴將銅電解析出至鈦或不鏽鋼之轉筒上而製造,壓延銅箔係重複進行利用壓延輥之塑性加工與熱處理而製造。於要求彎曲性之 用途中,多數情況下應用壓延銅箔。 The form of the copper foil substrate which can be used in the present invention is not particularly limited. Typically, the copper foil used in the present invention may be either an electrolytic copper foil or a rolled copper foil. Usually, an electrolytic copper foil is produced by electrolyzing copper into a drum of titanium or stainless steel by a copper sulfate plating bath, and the rolled copper foil is repeatedly produced by plastic working and heat treatment by a calender roll. For bending In the application, calendered copper foil is used in many cases.

作為銅箔基材之材料,除了通常用作印刷配線板之導體圖案之精銅或無氧銅等高純度銅以外,亦可使用例如摻Sn銅、摻Ag銅、添加有Cr、Zr或Mg等之銅合金、添加有Ni及Si等之卡遜系銅合金之類的銅合金。再者,於本說明書中,單獨使用用語「銅箔」時,亦包含銅合金箔。 As the material of the copper foil substrate, in addition to high-purity copper such as refined copper or oxygen-free copper which is usually used as a conductor pattern of a printed wiring board, for example, Sn-doped copper, Ag-doped copper, Cr, Zr or Mg added may be used. A copper alloy such as a copper alloy or a Cason copper alloy to which Ni and Si are added. In addition, in the present specification, when the term "copper foil" is used alone, a copper alloy foil is also included.

再者,銅箔基材之板厚無需特別限定,例如為1~1000μm、1~500μm、1~300μm、3~100μm、5~70μm、6~35μm、或9~18μm。 Further, the thickness of the copper foil substrate is not particularly limited, and is, for example, 1 to 1000 μm, 1 to 500 μm, 1 to 300 μm, 3 to 100 μm, 5 to 70 μm, 6 to 35 μm, or 9 to 18 μm.

又,本發明之另一態樣係一種附載體銅箔,係依序具有載體、中間層、極薄銅層者,上述極薄銅層為本發明之高頻電路用銅箔。即,於本發明之另一態樣中,可使用依序具有載體、中間層、極薄銅層之附載體銅箔作為銅箔基材。於本發明中使用附載體銅箔之情形時,於極薄銅層表面設置以下粗化處理層等表面處理層。再者,附載體銅箔之另一實施之形態係如下所述。 Further, another aspect of the present invention is a copper foil with a carrier which has a carrier, an intermediate layer, and an extremely thin copper layer in this order, and the ultra-thin copper layer is a copper foil for a high-frequency circuit of the present invention. That is, in another aspect of the present invention, a copper foil with a carrier having a carrier, an intermediate layer, and an extremely thin copper layer in this order can be used as the copper foil substrate. In the case where the carrier copper foil is used in the present invention, a surface treatment layer such as a roughening treatment layer is provided on the surface of the ultra-thin copper layer. Further, another embodiment of the carrier-attached copper foil is as follows.

通常,為了提高銅箔與樹脂基材接著之面即粗化面於積層後之銅箔之剝離強度,於脫脂後之銅箔之表面實施進行「結瘤」狀之電鍍之粗化處理。電解銅箔於製造時具有凹凸,藉由粗化處理增強電解銅箔之凸部而進一步擴大凹凸。有進行通常之銅鍍敷等作為粗化前之前處理之情況,亦有為防止電鍍物之脫落而進行通常之銅鍍敷等作為粗化後之完工處理之情況。 Usually, in order to improve the peeling strength of the rough surface of the copper foil and the resin substrate, that is, the copper foil after lamination, the surface of the copper foil after degreasing is subjected to roughening treatment in the form of "nodulation". The electrolytic copper foil has irregularities at the time of production, and the convex portion of the electrolytic copper foil is reinforced by the roughening treatment to further enlarge the unevenness. There are cases where normal copper plating or the like is performed as a pre-roughening treatment, and normal copper plating or the like is performed as a roughening completion treatment to prevent the plating material from falling off.

於本發明中,所謂「粗化處理」包括此種前處理及完工處理,視需要亦包括與銅箔粗化相關之公知之處理。 In the present invention, the "roughening treatment" includes such pre-treatment and completion treatment, and includes a known treatment relating to roughening of copper foil as needed.

將該粗化處理設為藉由銅-鈷-鎳合金鍍敷進行(以下說明 中,為明確與前步驟之差異,將銅-鈷-鎳合金鍍敷之粗化處理稱為「二次粒子層」),但若如上所述般僅單純地於銅箔之上形成銅-鈷-鎳合金鍍層,則會產生如上所述之落粉等問題。 The roughening treatment is performed by copper-cobalt-nickel alloy plating (described below) In order to clarify the difference from the previous step, the roughening treatment of the copper-cobalt-nickel alloy plating is referred to as "secondary particle layer", but if copper is formed on the copper foil only as described above - Cobalt-nickel alloy plating causes problems such as falling powder as described above.

將銅箔之上形成有銅-鈷-鎳合金鍍層之銅箔之表面的顯微鏡照片示於圖3。如該圖3所示,可見延伸成樹枝狀之微細粒子。通常,該圖3所示之延伸成樹枝狀之微細粒子以高電流密度製作。 A micrograph of the surface of a copper foil on which a copper-cobalt-nickel alloy plating layer was formed on a copper foil is shown in Fig. 3. As shown in Fig. 3, fine particles extending in a dendritic shape can be seen. Generally, the fine particles extending in a dendritic shape as shown in Fig. 3 are produced at a high current density.

於在此種高電流密度下進行處理之情形時,可抑制於初期電鍍中產生粒子核,且於粒子前端形成新的粒子核,因此細長之粒子逐漸成長為樹枝狀。 When the treatment is carried out at such a high current density, the particle nucleus is prevented from being generated in the initial plating, and a new particle nucleus is formed at the tip end of the particle, so that the elongated particle gradually grows into a dendritic shape.

因此,若為防止此種情況而降低電流密度並進行電鍍,則尖減少,粒子增加,帶弧度之形狀之粒子成長。然而,於此種狀況下,落粉亦得以略微改善,但無法獲得充分之剝離強度,無法充分地達成本案發明之目的。 Therefore, if the current density is lowered and electroplating is performed to prevent such a situation, the tip is reduced, the particles are increased, and the particles having a curved shape grow. However, in this case, the falling powder was also slightly improved, but sufficient peel strength could not be obtained, and the object of the present invention could not be sufficiently achieved.

將如圖3所示之形成銅-鈷-鎳合金鍍層之情形時的落粉之情況示於圖1之概念說明圖。該落粉之原因在於:如上所述般於銅箔上微細粒子生成為樹枝狀,該樹枝狀之粒子容易因外力使樹枝之一部分折斷,又自根部脫落。該微細樹枝狀之粒子係由處理中之「摩擦」引起之剝離、由剝離粉引起之輥之髒污、由剝離粉引起之產生蝕刻殘渣的原因。 The case where the powder is dropped in the case of forming a copper-cobalt-nickel alloy plating layer as shown in Fig. 3 is shown in the conceptual diagram of Fig. 1. The reason why the powder is dropped is that the fine particles are formed into a dendritic shape on the copper foil as described above, and the dendritic particles are likely to be partially broken by the external force and fall off from the root portion. The fine dendritic particles are caused by peeling due to "friction" during the treatment, contamination of the roll by the peeling powder, and generation of etching residue by the peeling powder.

於本發明中,於銅箔之表面預先形成銅之一次粒子層後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金形成之二次粒子層。將於銅箔上形成有該一次粒子及二次粒子之表面之顯微鏡照片示於圖4(詳細內容係如下所述)。 In the present invention, after the primary particle layer of copper is formed on the surface of the copper foil, a secondary particle layer formed of a ternary alloy composed of copper, cobalt and nickel is formed on the primary particle layer. A micrograph of the surface on which the primary particles and secondary particles are formed on the copper foil is shown in Fig. 4 (details are as follows).

藉此,使由處理中之「摩擦」引起之剝離、由剝離粉引起之輥之髒污、 由剝離粉引起之蝕刻殘渣消失,即可抑制稱為落粉之現象,可獲得能夠提高剝離強度且提高高頻特性的高頻電路用銅箔。 Thereby, the peeling caused by the "friction" during the treatment, the dirt of the roller caused by the peeling powder, When the etching residue due to the release powder disappears, the phenomenon called powder falling can be suppressed, and a copper foil for high-frequency circuit which can improve the peel strength and improve the high-frequency characteristics can be obtained.

根據下述所示之實施例可闡明,防止落粉最佳之條件係將上述一次粒子層之平均粒徑設為0.25~0.45μm、將由銅、鈷及鎳構成之三元系合金形成之二次粒子層之平均粒徑設為0.35μm以下。上述一次粒子層之平均粒徑之下限較佳為0.27μm以上,更佳為0.29μm以上,更佳為0.30μm以上,進而較佳為0.33μm以上。上述一次粒子層之平均粒徑之上限較佳為0.44μm以下,更佳為0.43μm以下,更佳為0.40μm以下,進而較佳為0.39μm以下。又,上述二次粒子層之平均粒徑之上限較佳為0.34μm以下,更佳為0.33μm以下,更佳為0.32μm以下,進而較佳為0.31μm以下,進而較佳為0.30μm以下,進而更佳為0.28μm以下,較佳為0.27μm以下。又,二次粒子層之平均粒徑之下限無需特別限定,例如為0.001μm以上、0.01μm以上、0.05μm以上、0.09μm以上、0.10μm以上、0.12μm以上、或0.15μm以上。 According to the examples shown below, it is clarified that the optimum conditions for preventing the falling powder are that the average particle diameter of the primary particle layer is 0.25 to 0.45 μm, and the ternary alloy composed of copper, cobalt and nickel is formed. The average particle diameter of the secondary particle layer is set to 0.35 μm or less. The lower limit of the average particle diameter of the primary particle layer is preferably 0.27 μm or more, more preferably 0.29 μm or more, still more preferably 0.30 μm or more, and still more preferably 0.33 μm or more. The upper limit of the average particle diameter of the primary particle layer is preferably 0.44 μm or less, more preferably 0.43 μm or less, still more preferably 0.40 μm or less, still more preferably 0.39 μm or less. Further, the upper limit of the average particle diameter of the secondary particle layer is preferably 0.34 μm or less, more preferably 0.33 μm or less, still more preferably 0.32 μm or less, still more preferably 0.31 μm or less, still more preferably 0.30 μm or less. Further, it is more preferably 0.28 μm or less, and is preferably 0.27 μm or less. Further, the lower limit of the average particle diameter of the secondary particle layer is not particularly limited, and is, for example, 0.001 μm or more, 0.01 μm or more, 0.05 μm or more, 0.09 μm or more, 0.10 μm or more, 0.12 μm or more, or 0.15 μm or more.

上述一次粒子層及二次粒子層藉由電鍍層而形成。該二次粒子之特徵在於:於上述一次粒子上成長之1個或複數個樹枝狀之粒子。或者於上述一次粒子上成長之正常鍍敷。即,於本說明書中使用用語「二次粒子層」之情形時,亦包含被覆鍍敷等正常鍍層。又,二次粒子層可為具有一層以上由粗化粒子形成之層者,可為具有一層以上正常鍍層者,亦可為分別具有一層以上由粗化粒子形成之層與正常鍍層者。 The primary particle layer and the secondary particle layer are formed by a plating layer. The secondary particles are characterized by one or a plurality of dendritic particles grown on the primary particles. Or normal plating grown on the above primary particles. In other words, when the term "secondary particle layer" is used in the present specification, a normal plating layer such as coating plating is also included. Further, the secondary particle layer may have one or more layers formed of roughened particles, and may have one or more layers of normal plating, or may have one or more layers of roughened particles and a normal plating layer, respectively.

如此形成之一次粒子層及二次粒子層之剝離強度可達到0.80kg/cm以上,進而剝離強度達到0.90kg/cm以上。 The peeling strength of the primary particle layer and the secondary particle layer thus formed can be 0.80 kg/cm or more, and the peel strength can be 0.90 kg/cm or more.

於形成有一次粒子層及二次粒子層之銅箔中,進而重要的是將利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值設為1500以上、較佳為1600以上、更佳為1700以上、進而較佳為1800以上、進而更佳為1900以上。再者,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值之上限無需特別設置,例如為4500以下、3500以下、3100以下、3000以下、2900以下、或2800以下。 In the copper foil in which the primary particle layer and the secondary particle layer are formed, it is more important that the average value of the unevenness height of the roughened surface obtained by the laser microscope is 1,500 or more, preferably 1600 or more, and more preferably It is 1700 or more, more preferably 1800 or more, still more preferably 1900 or more. Further, the upper limit of the average value of the unevenness height of the roughened surface obtained by the laser microscope is not particularly limited, and is, for example, 4,500 or less, 3,500 or less, 3,100 or less, 3,000 or less, 2,900 or less, or 2,800 or less.

本發明之特徵在於形成具有一次粒子層及二次粒子層之層化處理層,該粗化處理層之理想狀態係如圖2所示之於較大之一次粒子層1層上形成有1~2層較小之二次粒子層的狀態。現實而言,亦存在一次粒子與二次粒子均使粒子重疊成一段之情況,於形成複雜之層後,難以根據粒徑推測層之高度。作為通常之傾向,例如,於小之一次粒子上形成大致與一次粒子相同或其以上之大小之二次粒子之情況,及於大之一次粒子上較厚地形成小之二次粒子之情況均欠佳,難以具體地控制該組合。因此,發現於本發明中藉由著眼於「利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值」之巨觀目標並對其進行控制,可形成具有如下效果之粗化處理層:即便不對一次粒子與二次粒子之組合之詳細結構進行控制,亦可提高穩定之剝離強度與防止穩定之落粉現象。再者,所謂「利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值」中之「粗化處理面」,係意指最終製品上之表面,並意指形成有一次粒子層及二次粒子層之側之最表面。又,於二次粒子層上形成例如耐熱層、防銹層、矽烷偶合處理層等表面處理層時,係意指該表面處理層之最表面。再者,於形成下述「樹脂層」時,係意指該樹脂層除外之銅箔之形成有一次粒子層及二次粒子層之側之最表 面。 The invention is characterized in that a stratified layer having a primary particle layer and a secondary particle layer is formed, and the ideal state of the roughened layer is formed on the first layer of the larger primary particle layer as shown in FIG. 2 The state of the 2 layers of the smaller secondary particle layer. In reality, there are cases where both primary particles and secondary particles cause the particles to overlap into one segment. After forming a complex layer, it is difficult to estimate the height of the layer based on the particle size. As a general tendency, for example, a case where a secondary particle having a size substantially equal to or larger than that of a primary particle is formed on a primary particle, and a small secondary particle which is thickly formed on a primary primary particle is owed. Preferably, it is difficult to specifically control the combination. Therefore, it has been found that in the present invention, by focusing on and controlling the macroscopic object of "the average value of the unevenness height of the roughened surface obtained by the laser microscope", a roughening treatment layer having the following effects can be formed: Even if the detailed structure of the combination of the primary particles and the secondary particles is not controlled, the stable peel strength and the stable powder falling phenomenon can be improved. In addition, the "roughening surface" in the "average value of the height of the unevenness of the roughened surface obtained by the laser microscope" means the surface on the final product, and means that the primary particle layer and the second layer are formed. The outermost surface of the side of the secondary particle layer. Further, when a surface treatment layer such as a heat-resistant layer, a rust-proof layer, or a decane coupling treatment layer is formed on the secondary particle layer, it means the outermost surface of the surface treatment layer. In addition, when forming the following "resin layer", it means that the copper foil except the resin layer has the surface of the primary particle layer and the secondary particle layer. surface.

若利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值未達1500,則形成有一次粒子層及二次粒子層之銅箔因二次粒子層堆積,而使粗化粒子之巨觀高度之凹凸差變小,容易產生落粉現象。 If the average value of the unevenness height of the roughened surface obtained by the laser microscope is less than 1,500, the copper foil in which the primary particle layer and the secondary particle layer are formed is deposited by the secondary particle layer, and the coarse particles are enlarged. The unevenness of the height becomes small, and the phenomenon of falling powder is likely to occur.

利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值之測量法係藉由如下方法進行設定:對於使用基恩斯股份有限公司製造之雷射顯微鏡VK8500將倍率設定為1000倍而測量粗化處理面所得之結果,藉由有效面積為786432μm2(測量區域100%)之測量解析,將凹凸高度使用解析軟體KVH1A9直方圖化,求出其平均值。 The measurement method of the average value of the unevenness height of the roughened surface obtained by the laser microscope was set by the following method: For the laser processing using the laser microscope VK8500 manufactured by Keyence Co., Ltd., the magnification was set to 1000 times. As a result of the measurement, the measurement of the effective area was 786432 μm 2 (measurement area 100%), and the height of the concavities and convexities was histograms using the analytical software KVH1A9, and the average value was obtained.

可於二次粒子層上形成:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者。 It can be formed on the secondary particle layer: (A) consisting of Ni and one or more elements selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As, and Ti Either or both of the alloy layer, and (B) the chromate layer.

又,可於二次粒子層上依序形成(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者,及矽烷偶合層。 Further, (A) one or more groups selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As, and Ti may be sequentially formed on the secondary particle layer. Either or both of the alloy layer of the element and (B) the chromate layer, and the decane coupling layer.

進而,可於二次粒子層上形成Ni-Zn合金層及鉻酸鹽層之任一者或兩者。 Further, either or both of the Ni-Zn alloy layer and the chromate layer may be formed on the secondary particle layer.

進而,可於二次粒子層上依序形成Ni-Zn合金層及鉻酸鹽層之任一者或兩者,及矽烷偶合層。 Further, either or both of the Ni-Zn alloy layer and the chromate layer and the decane coupling layer may be sequentially formed on the secondary particle layer.

藉由此種構成,可於維持剝離強度之狀態下提高高頻傳輸特性。 According to this configuration, the high-frequency transmission characteristics can be improved while maintaining the peel strength.

[傳輸損耗] [transmission loss]

於傳輸損耗較小之情形時,可抑制以高頻進行訊號傳輸時訊號之衰減,因此以高頻進行訊號之傳輸之電路可進行穩定之訊號之傳輸。因此,傳輸損耗之值較小者適合用於以高頻進行訊號之傳輸之電路用途,故而較佳。將表面處理銅箔與市售之液晶聚合物樹脂(Kuraray股份有限公司製造之Vecstar CTZ-50μm)貼合後,利用蝕刻以特性阻抗成為50Ω之方式形成微帶線路,使用HP公司製造之網路分析儀HP8720C測量穿透係數,求出於頻率20GHz及頻率40GHz之傳輸損耗,於此情形時,頻率20GHz之傳輸損耗較佳為未達5.0dB/10cm,更佳為未達4.1dB/10cm,進而較佳為未達3.7dB/10cm。 In the case where the transmission loss is small, the attenuation of the signal when the signal is transmitted at a high frequency can be suppressed, so that the circuit for transmitting the signal at a high frequency can perform stable signal transmission. Therefore, the smaller value of the transmission loss is suitable for circuit use for transmitting signals at high frequencies, and thus is preferable. After the surface-treated copper foil was bonded to a commercially available liquid crystal polymer resin (Vecstar CTZ-50 μm manufactured by Kuraray Co., Ltd.), a microstrip line was formed by etching to have a characteristic impedance of 50 Ω, and a network manufactured by HP was used. The analyzer HP8720C measures the transmission coefficient and obtains the transmission loss at a frequency of 20 GHz and a frequency of 40 GHz. In this case, the transmission loss at a frequency of 20 GHz is preferably less than 5.0 dB/10 cm, more preferably less than 4.1 dB/10 cm. Further preferably, it is less than 3.7 dB/10 cm.

可將本發明之表面處理銅箔自粗化處理面側與樹脂基板貼合而製造積層體。樹脂基板只要具有可應用於印刷配線板等之特性,則不受特別限制,例如,剛性PWB用中可使用紙基材酚系樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布/紙複合基材環氧樹脂、玻璃布/玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂等,FPC用中可使用聚酯膜或聚醯亞胺膜、液晶聚合物(LCP)膜、氟樹脂等。再者,於使用液晶聚合物(LCP)膜或氟樹脂膜之情形時,與使用聚醯亞胺膜之情形時相比,有該膜與表面處理銅箔之剝離強度變小之傾向。因此,於使用液晶聚合物(LCP)膜或氟樹脂膜之情形時,藉由於形成銅電路後以覆蓋層被覆銅電路,該膜與銅電路不易剝離,可防止因剝離強度之降低引起之該膜與銅電路之剝離。 The surface-treated copper foil of the present invention can be bonded to the resin substrate from the roughened surface side to produce a laminate. The resin substrate is not particularly limited as long as it has characteristics applicable to a printed wiring board or the like. For example, a paper substrate phenol resin, a paper substrate epoxy resin, or a synthetic fiber cloth substrate epoxy resin can be used for the rigid PWB. , glass cloth / paper composite substrate epoxy resin, glass cloth / glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, etc., FPC can use polyester film or polyimide film, liquid crystal polymerization (LCP) film, fluororesin, etc. Further, when a liquid crystal polymer (LCP) film or a fluororesin film is used, the peeling strength of the film and the surface-treated copper foil tends to be smaller than in the case of using a polyimide film. Therefore, when a liquid crystal polymer (LCP) film or a fluororesin film is used, since the copper circuit is coated with a cap layer after the copper circuit is formed, the film and the copper circuit are not easily peeled off, and the peeling strength can be prevented from being lowered. Peeling of the film from the copper circuit.

再者,液晶聚合物(LCP)膜或氟樹脂膜之介電損耗正切小,因此使用液晶聚合物(LCP)膜或氟樹脂膜與本發明之表面處理銅箔之覆銅積層板、 印刷配線板、印刷電路板適於高頻電路(以高頻進行訊號之傳輸之電路)用途。又,本發明之表面處理銅箔之表面粗糙度Rz小,光澤度高,因此表面平滑,亦適於高頻電路用途。 Further, since the liquid crystal polymer (LCP) film or the fluororesin film has a small dielectric loss tangent, a liquid crystal polymer (LCP) film or a fluororesin film and a copper-clad laminate of the surface-treated copper foil of the present invention are used. Printed wiring boards and printed circuit boards are suitable for use in high-frequency circuits (circuits that transmit signals at high frequencies). Further, the surface-treated copper foil of the present invention has a small surface roughness Rz and a high gloss, so that the surface is smooth and suitable for high-frequency circuit applications.

關於貼合之方法,於剛性PWB用之情形時,準備將樹脂含浸於玻璃布等基材而使樹脂硬化至半硬化狀態的預浸體。可藉由將銅箔自與被覆層相反之側之面與預浸體重疊並進行加熱加壓而進行。於FPC之情形時,可藉由如下方式製造積層板:於聚醯亞胺膜等基材經由接著劑或不使用接著劑而於高溫高壓下積層接著銅箔,或者對聚醯亞胺前驅物進行塗佈、乾燥、硬化等。 In the case of the rigid PWB, the method of bonding is prepared by impregnating a resin with a substrate such as a glass cloth to cure the resin to a semi-hardened state. The copper foil can be formed by superposing the surface of the copper foil from the side opposite to the coating layer with the prepreg and heating and pressing. In the case of FPC, a laminate can be produced by laminating a copper foil with a substrate such as a polyimide film via an adhesive or without an adhesive under high temperature and high pressure, or a polyimide precursor. Coating, drying, hardening, and the like.

本發明之積層體可用於各種印刷配線板(PWB),並無特別限制,例如,就導體圖案之層數之觀點而言,可應用於單面PWB、雙面PWB、多層PWB(3層以上),就絕緣基板材料之種類之觀點而言,可應用於剛性PWB、軟性PWB(FPC)、軟硬複合PWB。 The laminate of the present invention can be used for various printed wiring boards (PWB), and is not particularly limited. For example, from the viewpoint of the number of layers of the conductor pattern, it can be applied to single-sided PWB, double-sided PWB, and multilayer PWB (three or more layers). From the viewpoint of the type of the insulating substrate material, it can be applied to rigid PWB, soft PWB (FPC), and soft and hard composite PWB.

進而,藉由於印刷配線板搭載電子零件類,而完成印刷電路板。於本發明中,「印刷配線板」亦包括如此搭載有電子零件類之印刷配線板及印刷電路板及印刷基板。 Further, the printed circuit board is completed by mounting electronic components on the printed wiring board. In the present invention, the "printed wiring board" also includes a printed wiring board, a printed circuit board, and a printed circuit board on which electronic components are mounted.

又,可使用該印刷配線板製作電子機器,可使用搭載有該電子零件類之印刷電路板製作電子機器,亦可使用搭載有該電子零件類之印刷基板製作電子機器。 Moreover, an electronic device can be produced using the printed wiring board, and an electronic device can be produced using a printed circuit board on which the electronic component is mounted, or an electronic device can be manufactured using the printed circuit board on which the electronic component is mounted.

(銅之一次粒子之鍍敷條件) (plating conditions of primary particles of copper)

若舉出銅之一次粒子之鍍敷條件之一例,則係如下所述。 An example of the plating conditions of the primary particles of copper is as follows.

再者,該鍍敷條件僅表示較佳例,銅之一次粒子之形成於銅箔上之平 均粒徑擔負落粉防止之作用。因此,若平均粒徑處於本發明之範圍,則下述所示內容以外之鍍敷條件不會造成任何阻礙。本發明包含該等。 Furthermore, the plating conditions only show a preferred example, and the primary particles of copper are formed on the copper foil. The average particle size is responsible for the prevention of falling powder. Therefore, if the average particle diameter is within the range of the present invention, the plating conditions other than those shown below will not cause any hindrance. The present invention encompasses such.

液組成:銅10~20g/L、硫酸50~100g/L Liquid composition: copper 10~20g/L, sulfuric acid 50~100g/L

液溫:25~50℃ Liquid temperature: 25~50°C

電流密度:1~58A/dm2 Current density: 1~58A/dm 2

庫侖量:4~81As/dm2 Coulomb amount: 4~81As/dm 2

(二次粒子之鍍敷條件) (plating conditions of secondary particles)

再者,與上述同樣,該鍍敷條件僅表示較佳例,二次粒子形成於一次粒子上,並且平均粒徑擔負落粉防止之作用。因此,若平均粒徑處於本發明之範圍,則下述所示內容以外之鍍敷條件不會造成任何阻礙。本發明包含該等。 Further, similarly to the above, the plating conditions are only a preferred example, and secondary particles are formed on the primary particles, and the average particle diameter acts as a powder falling prevention. Therefore, if the average particle diameter is within the range of the present invention, the plating conditions other than those shown below will not cause any hindrance. The present invention encompasses such.

液組成:銅10~20g/L、鎳5~15g/L、鈷5~15g/L Liquid composition: copper 10~20g/L, nickel 5~15g/L, cobalt 5~15g/L

pH值:2~3 pH: 2~3

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:24~50A/dm2 Current density: 24~50A/dm 2

庫侖量:34~48As/dm2 Coulomb amount: 34~48As/dm 2

(形成耐熱層1之鍍敷條件)(Co-Ni鍍敷:鈷鎳合金鍍敷) (Formation conditions for forming the heat-resistant layer 1) (Co-Ni plating: cobalt-nickel alloy plating)

本發明可於上述二次粒子層上進而形成耐熱層。將該鍍敷條件表示如下。 In the present invention, a heat-resistant layer can be further formed on the secondary particle layer. This plating condition is shown as follows.

液組成:鎳5~20g/L、鈷1~8g/L Liquid composition: nickel 5~20g/L, cobalt 1~8g/L

pH值:2~3 pH: 2~3

液溫:40~60℃ Liquid temperature: 40~60°C

電流密度:5~20A/dm2 Current density: 5~20A/dm 2

庫侖量:10~20As/dm2 Coulomb amount: 10~20As/dm 2

(形成耐熱層2之鍍敷條件)(Ni-Zn鍍敷:鎳鋅合金鍍敷) (Formation conditions for forming the heat-resistant layer 2) (Ni-Zn plating: nickel-zinc alloy plating)

本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 In the present invention, the following heat-resistant layer can be further formed on the secondary particle layer. This plating condition is shown as follows.

液組成:鎳2~30g/L、鋅2~30g/L Liquid composition: nickel 2~30g/L, zinc 2~30g/L

pH值:3~4 pH: 3~4

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(形成耐熱層3之鍍敷條件)(Ni-Cu鍍敷:鎳銅合金鍍敷) (plating conditions for forming the heat-resistant layer 3) (Ni-Cu plating: nickel-copper alloy plating)

本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 In the present invention, the following heat-resistant layer can be further formed on the secondary particle layer. This plating condition is shown as follows.

液組成:鎳2~30g/L、銅2~30g/L Liquid composition: nickel 2~30g/L, copper 2~30g/L

pH值:3~4 pH: 3~4

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(形成耐熱層4之鍍敷條件)(Ni-Mo鍍敷:鎳鉬合金鍍敷) (plating conditions for forming the heat-resistant layer 4) (Ni-Mo plating: nickel-molybdenum alloy plating)

本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 In the present invention, the following heat-resistant layer can be further formed on the secondary particle layer. This plating condition is shown as follows.

液組成:硫酸Ni六水合物:45~55g/dm3、鉬酸鈉二水合物:50~70g /dm3、檸檬酸鈉:80~100g/dm3 Liquid composition: Ni hexahydrate: 45~55g/dm 3 , sodium molybdate dihydrate: 50~70g /dm 3 , sodium citrate: 80~100g/dm 3

液溫:20~40℃ Liquid temperature: 20~40°C

電流密度:1~4A/dm2 Current density: 1~4A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(形成耐熱層5之鍍敷條件)(Ni-Sn鍍敷:鎳錫合金鍍敷) (plating conditions for forming the heat-resistant layer 5) (Ni-Sn plating: nickel-tin alloy plating)

本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 In the present invention, the following heat-resistant layer can be further formed on the secondary particle layer. This plating condition is shown as follows.

液組成:鎳2~30g/L、錫2~30g/L Liquid composition: nickel 2~30g/L, tin 2~30g/L

pH值:1.5~4.5 pH: 1.5~4.5

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(形成耐熱層6之鍍敷條件)(Ni-P鍍敷:鎳磷合金鍍敷) (plating conditions for forming the heat-resistant layer 6) (Ni-P plating: nickel-phosphorus alloy plating)

本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 In the present invention, the following heat-resistant layer can be further formed on the secondary particle layer. This plating condition is shown as follows.

液組成:鎳30~70g/L、磷0.2~1.2g/L Liquid composition: nickel 30~70g/L, phosphorus 0.2~1.2g/L

pH值:1.5~2.5 pH: 1.5~2.5

液溫:30~40℃ Liquid temperature: 30~40°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(形成耐熱層7之鍍敷條件)(Ni-W鍍敷:鎳鎢合金鍍敷) (plating conditions for forming the heat-resistant layer 7) (Ni-W plating: nickel-tungsten alloy plating)

本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表 示如下。 In the present invention, the following heat-resistant layer can be further formed on the secondary particle layer. Plating condition table Shown as below.

液組成:鎳2~30g/L、W0.01~5g/L Liquid composition: nickel 2~30g/L, W0.01~5g/L

pH值:3~4 pH: 3~4

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(形成耐熱層8之鍍敷條件)(Ni-Cr鍍敷:鎳鉻合金鍍敷) (plating conditions for forming the heat-resistant layer 8) (Ni-Cr plating: nickel-chromium alloy plating)

本發明可於上述二次粒子層上進而形成下述耐熱層。將該鍍敷條件表示如下。 In the present invention, the following heat-resistant layer can be further formed on the secondary particle layer. This plating condition is shown as follows.

使用Ni:65~85mass%、Cr:15~35mass%之組成之濺鍍靶形成鎳鉻合金鍍層。 A nickel-chromium alloy plating layer is formed using a sputtering target having a composition of Ni: 65 to 85 mass% and Cr: 15 to 35 mass%.

靶:Ni:65~85mass%、Cr:15~35mass% Target: Ni: 65~85mass%, Cr: 15~35mass%

裝置:ULVAC股份有限公司製造之濺鍍裝置 Device: Sputtering device manufactured by ULVAC Co., Ltd.

輸出:DC50W Output: DC50W

氬氣壓力:0.2Pa Argon pressure: 0.2Pa

(形成防銹層之鍍敷條件) (Formation conditions for forming a rustproof layer)

本發明可進而形成下述防銹層。將該鍍敷條件表示如下。下述表示浸漬鉻酸鹽處理之條件,亦可為電解鉻酸鹽處理。 The present invention can further form the following rust preventive layer. This plating condition is shown as follows. The conditions for impregnating the chromate treatment are as follows, and may also be an electrolytic chromate treatment.

液組成:重鉻酸鉀1~10g/L、鋅0~5g/L Liquid composition: potassium dichromate 1~10g/L, zinc 0~5g/L

pH值:3~4 pH: 3~4

液溫:50~60℃ Liquid temperature: 50~60°C

電流密度:0~2A/dm2(0A/dm2為浸漬鉻酸鹽處理之情形) Current density: 0~2A/dm 2 (0A/dm 2 is the case of impregnated chromate treatment)

庫侖量:0~2As/dm2(0As/dm2為浸漬鉻酸鹽處理之情形) Coulomb amount: 0~2As/dm 2 (0As/dm 2 is the case of impregnated chromate treatment)

(耐候性層(矽烷偶合層)之種類) (Type of weather resistant layer (decane coupling layer))

作為一例,可列舉二胺基矽烷水溶液之塗佈。 As an example, the application of the diamino decane aqueous solution is mentioned.

再者,有藉由濺鍍等乾式鍍敷設置耐熱層等金屬層、鍍層之情況,及藉由濕式鍍敷設置耐熱層等金屬層、鍍層之情況,並且有以正常鍍敷(平滑鍍敷即於未達界限電流密度之電流密度下進行鍍敷)而具有耐熱層等金屬層、鍍層之情況,該金屬層、鍍層不會對銅箔之表面之形狀造成影響。 In addition, a metal layer such as a heat-resistant layer or a plating layer is provided by dry plating such as sputtering, and a metal layer such as a heat-resistant layer or a plating layer is provided by wet plating, and normal plating (smooth plating) is used. The coating is performed at a current density that does not reach the limit current density, and has a metal layer such as a heat-resistant layer or a plating layer. The metal layer and the plating layer do not affect the shape of the surface of the copper foil.

界限電流密度係根據金屬濃度、pH值、給液速度、極間距離、鍍敷液溫度而變化,於本發明中,將正常鍍敷(經鍍敷之金屬析出為層狀之狀態)與粗化鍍敷(燒鍍,經鍍敷之金屬析出為結晶狀(球狀或針狀或樹掛狀等)之狀態,存在凹凸)之交界之電流密度定義為界限電流密度,將利用霍爾槽試驗成為正常鍍敷之界限(即將成為燒鍍前)之電流密度(目視判斷)設為界限電流密度。 The limit current density varies depending on the metal concentration, the pH value, the feed rate, the interelectrode distance, and the temperature of the plating solution. In the present invention, the normal plating (the state in which the plated metal is deposited as a layer) is coarse and thick. The current density at the junction of the plating (the state in which the plated metal is crystallized (spherical or needle-like or tree-like), and the unevenness is defined as the limit current density, and the Hall groove test will be used. The current density (visual judgment) which is the limit of normal plating (that is, immediately before baking) is set as the limit current density.

具體而言,將金屬濃度、pH值、鍍敷液溫度設定為鍍敷之製造條件,進行霍爾槽試驗。然後,調查於該鍍敷液組成、鍍敷液溫度之金屬層形成狀態(經鍍敷之金屬析出為層狀或形成為結晶狀)。然後,基於山本鍍金試驗器股份有限公司製造之電流密度一覽表,根據試片之正常鍍敷與粗化鍍敷之交界所存在之部位之試片位置,求出該交界之位置之電流密度。並且,將該交界之位置之電流密度規定為界限電流密度。藉此,可知於該鍍敷液組成、鍍敷液溫度之界限電流密度。通常,若極間距離較短,則有界限電流密度變高之傾向。 Specifically, the Hall concentration test was performed by setting the metal concentration, the pH value, and the plating solution temperature to the plating production conditions. Then, the formation state of the plating solution and the temperature of the plating solution were investigated (the metal to be plated was precipitated into a layer or formed into a crystal). Then, based on the current density list manufactured by Yamamoto Gold Platter Tester Co., Ltd., the current density at the position of the boundary was obtained from the position of the test piece at the boundary where the normal plating and the rough plating of the test piece exist. Further, the current density at the position of the boundary is defined as the limit current density. Thereby, the current density of the plating solution composition and the plating solution temperature can be known. In general, if the distance between the electrodes is short, the limit current density tends to be high.

霍爾槽試驗之方法例如記載於「鍍敷實務讀本」丸山清著,日刊工業 報社1983年6月30日之157頁至160頁中。 The method of the Hall slot test is described, for example, in the "Plating Practice Book" Maruyama Seiji, Nikkan Kogyo The newspaper was published on pages 157 to 160 of June 30, 1983.

再者,為了以未達界限電流密度進行鍍敷處理,因此較佳為將鍍敷處理時之電流密度設為20A/dm2以下,更佳為設為10A/dm2以下,進而較佳為設為8A/dm2以下。 Further, in order to perform the plating treatment at a current density lower than the limit current, it is preferable to set the current density during the plating treatment to 20 A/dm 2 or less, more preferably 10 A/dm 2 or less, and still more preferably Set to 8A/dm 2 or less.

又,鉻酸鹽層、矽烷偶合層之厚度極薄,因此不會對銅箔之表面之形狀造成影響。 Further, since the thickness of the chromate layer and the decane coupling layer is extremely thin, it does not affect the shape of the surface of the copper foil.

作為上述二次粒子之銅-鈷-鎳合金鍍敷可藉由電解鍍敷而形成附著量為10~30mg/dm2銅-100~3000μg/dm2鈷-50~500μg/dm2鎳之三元系合金層。 As the secondary particle of copper - cobalt - nickel alloy can be deposited by electroless plating and the plating deposition amount of 10 ~ 30mg / dm 2 of copper -100 ~ 3000μg / dm 2 of cobalt -50 ~ 500μg / dm 2 of nickel ter Elemental alloy layer.

若Co附著量未達100μg/dm2,則耐熱性變差,又,蝕刻性亦變差。若Co附著量超過3000μg/dm2,則於必須考慮磁性之影響方面欠佳,產生蝕刻斑,又,可認為耐酸性及耐化學品性惡化。 When the Co adhesion amount is less than 100 μg/dm 2 , the heat resistance is deteriorated, and the etching property is also deteriorated. When the Co adhesion amount exceeds 3000 μg/dm 2 , it is necessary to consider the influence of magnetic properties to be inferior, and an etching spot is generated, and the acid resistance and chemical resistance are considered to be deteriorated.

若Ni附著量未達50μg/dm2,則耐熱性變差。另一方面,若Ni附著量超過500μg/dm2,則蝕刻性降低。即,雖並非存在蝕刻殘渣又無法蝕刻之等級,但難以進行微細圖案化。較佳之Co附著量為500~2000μg/dm2,並且,較佳之鎳附著量為50~300μg/dm2When the Ni adhesion amount is less than 50 μg/dm 2 , the heat resistance is deteriorated. On the other hand, when the Ni adhesion amount exceeds 500 μg/dm 2 , the etching property is lowered. That is, although there is no etching residue and it is impossible to etch, it is difficult to perform fine patterning. The preferred deposition amount of Co 500 ~ 2000μg / dm 2, and, the deposited mass of nickel is preferably 50 ~ 300μg / dm 2.

根據以上,銅-鈷-鎳合金鍍敷之附著量可謂理想為10~30mg/dm2銅-100~3000μg/dm2鈷-50~500μg/dm2鎳。該三元系合金層之各附著量僅為理想之條件,並非否定超過該量之範圍。 According to the above, copper - cobalt - nickel alloy plating can be described over the plating deposition amount is 10 ~ 30mg / dm 2 of copper -100 ~ 3000μg / dm 2 of cobalt -50 ~ 500μg / dm 2 of nickel. The adhesion amount of the ternary alloy layer is only an ideal condition, and does not negate the range exceeding the amount.

此處,所謂蝕刻斑,係意指於以氯化銅進行蝕刻之情形時Co未溶解而殘存之情況,並且,所謂蝕刻殘渣,係意指於以氯化銨進行鹼蝕刻之情形時Ni未溶解而殘存之情況。 Here, the term "etching spot" means a case where Co is not dissolved and remains in the case of etching with copper chloride, and the term "etching residue" means that Ni is not used in the case of alkali etching with ammonium chloride. Dissolved and remains.

通常,於形成電路之情形時,使用下述實施例中說明之鹼蝕刻液及氯化銅系蝕刻液而進行。該蝕刻液及蝕刻條件具有通用性,但並不限定於該條件,應理解可任意地選擇。 Usually, in the case of forming a circuit, it is carried out using the alkali etching liquid and the copper chloride-based etching liquid described in the following examples. The etching liquid and the etching conditions are versatile, but are not limited to the conditions, and it should be understood that they can be arbitrarily selected.

本發明係如上所述,可於形成二次粒子後(粗化處理後),於粗化面上形成鈷-鎳合金鍍層。 In the present invention, as described above, a cobalt-nickel alloy plating layer may be formed on the roughened surface after the secondary particles are formed (after the roughening treatment).

該鈷-鎳合金鍍層理想為鈷之附著量為200~3000μg/dm2,且鈷之比率為60~66質量%。該處理於廣義上可視為一種防銹處理。 The cobalt-nickel alloy plating layer preferably has a cobalt adhesion amount of 200 to 3000 μg/dm 2 and a cobalt ratio of 60 to 66 mass%. This treatment can be regarded as a rust-proof treatment in a broad sense.

該鈷-鎳合金鍍層必須於實質性地不使銅箔與基板之接著強度降低之程度下進行。若鈷附著量未達200μg/dm2,則耐熱剝離強度降低,耐氧化性及耐化學品性變差,又,處理表面泛紅,故而欠佳。 The cobalt-nickel alloy plating layer must be carried out to such an extent that the strength of the copper foil and the substrate is not substantially lowered. When the cobalt adhesion amount is less than 200 μg/dm 2 , the heat-resistant peel strength is lowered, the oxidation resistance and chemical resistance are deteriorated, and the treated surface is reddish, which is not preferable.

又,若鈷附著量超過3000μg/dm2,則有必須考慮磁性之影響之情況,故而欠佳,並產生蝕刻斑,又,認為耐酸性及耐化學品性惡化。較佳之鈷附著量為400~2500μg/dm2In addition, when the cobalt adhesion amount exceeds 3000 μg/dm 2 , it is necessary to take into consideration the influence of the magnetic properties, so that the etching spot is not preferable, and the acid resistance and the chemical resistance are deteriorated. A preferred amount of cobalt adhesion is 400 to 2500 μg/dm 2 .

又,若鈷附著量多,則有成為產生軟蝕刻之滲入之原因之情況。因此,可謂理想為將鈷之比率設為60~66質量%。 Moreover, when the amount of cobalt adhesion is large, there is a case where penetration of soft etching occurs. Therefore, it is desirable to set the ratio of cobalt to 60 to 66% by mass.

如下所述,產生軟蝕刻之滲入之直接且較大之原因係由鋅-鎳合金鍍層構成之耐熱防銹層,但亦存在鈷亦成為產生軟蝕刻時滲入之原因之情況,因此更理想之條件係如上述般進行調整。 As described below, the direct and large cause of the infiltration of the soft etching is a heat-resistant rust-preventing layer composed of a zinc-nickel alloy plating layer, but cobalt is also a cause of infiltration during soft etching, and thus it is more preferable. The conditions were adjusted as described above.

另一方面,於鎳附著量少之情形時,耐熱剝離強度降低,耐氧化性及耐化學品性降低。又,於鎳附著量過多之情形時,鹼蝕刻性變差,因此理想為以與上述鈷含量之平衡而決定。 On the other hand, when the amount of nickel adhesion is small, the heat-resistant peel strength is lowered, and oxidation resistance and chemical resistance are lowered. Moreover, when the amount of nickel adhesion is too large, the alkali etching property is deteriorated, and therefore it is preferable to determine the balance with the cobalt content.

本發明可於鈷-鎳合金鍍敷上進而形成鋅-鎳合金鍍層。將 鋅-鎳合金鍍層之總量設為150~500μg/dm2,且將鎳之比率設為16~40質量%。其具有耐熱防銹層之作用。該條件亦僅為較佳之條件,可使用其他公知之鋅-鎳合金鍍敷。於本發明中,該鋅-鎳合金鍍敷可理解為較佳之附加條件。 The present invention can further form a zinc-nickel alloy plating layer on a cobalt-nickel alloy plating. The total amount of the zinc-nickel alloy plating layer is set to 150 to 500 μg/dm 2 , and the ratio of nickel is set to 16 to 40% by mass. It has the function of a heat-resistant rust-proof layer. This condition is also only a preferred condition, and other known zinc-nickel alloy plating can be used. In the present invention, the zinc-nickel alloy plating can be understood as a preferred additional condition.

電路之製造步驟中進行之處理成為更高溫,又,於製成製品後,使用機器時會產生熱。例如,於以熱壓接將銅箔接合於樹脂即所謂二層材中,於接合時會受到300℃以上之熱。於此種狀況之中,必須防止銅箔與樹脂基材之間之接合力之降低,該鋅-鎳合金鍍敷較為有效。 The processing performed in the manufacturing steps of the circuit becomes higher temperature, and after the product is formed, heat is generated when the machine is used. For example, in a so-called two-layer material in which a copper foil is bonded to a resin by thermocompression bonding, heat of 300 ° C or more is received at the time of bonding. In such a situation, it is necessary to prevent a decrease in the bonding strength between the copper foil and the resin substrate, and the zinc-nickel alloy plating is effective.

又,於習知之技術中,以熱壓接將銅箔接合於樹脂而成之二層材中的具備鋅-鎳合金鍍層之微小電路係於軟蝕刻時,在電路之邊緣部產生由滲入引起之變色。鎳具有抑制於軟蝕刻時使用之蝕刻劑(H2SO4:10wt%、H2O2:2wt%之蝕刻水溶液)之滲入的效果。 Further, in the conventional technique, a microcircuit having a zinc-nickel alloy plating layer in a two-layer material obtained by bonding a copper foil to a resin by thermocompression bonding is caused by infiltration at the edge portion of the circuit during soft etching. Discoloration. Nickel has an effect of suppressing penetration of an etchant (H 2 SO 4 : 10 wt%, H 2 O 2 : 2 wt% of an etching solution) used in soft etching.

如上所述,於將上述鋅-鎳合金鍍層之總量設為150~500μg/dm2,並且將該合金層中之鎳比率之下限值設為16質量%、將上限值設為40質量%,且將鎳之含量設為50μg/dm2以上時,具有如下效果:具備耐熱防銹層之作用,並且抑制於軟蝕刻時使用之蝕刻劑之滲入,可防止因腐蝕使電路之接合強度之弱化。 As described above, the total amount of the zinc-nickel alloy plating layer is 150 to 500 μg/dm 2 , and the lower limit of the nickel ratio in the alloy layer is 16% by mass, and the upper limit is 40. When the content of nickel is 50 μg/dm 2 or more, the effect is as follows: the heat-resistant rust-preventing layer is provided, and the penetration of the etchant used in the soft etching is suppressed, and the bonding of the circuit due to corrosion can be prevented. Weakening of strength.

再者,若鋅-鎳合金鍍層之總量未達150μg/dm2,則耐熱防銹力降低,難以擔負作為耐熱防銹層之作用,若相同之總量超過500μg/dm2,則有耐鹽酸性變差之傾向。 Further, if the total amount of the zinc-nickel alloy plating layer is less than 150 μg/dm 2 , the heat-resistant rust-preventing force is lowered, and it is difficult to function as a heat-resistant rust-proof layer, and if the same total amount exceeds 500 μg/dm 2 , it is resistant. The tendency of hydrochloric acid to deteriorate.

又,若合金層中之鎳比率之下限值未達16質量%,則軟蝕刻時之滲入量超過9μm,故而欠佳。鎳比率之上限值40質量%係可形成鋅-鎳合金鍍 層之技術上之界限值。 Further, when the lower limit of the nickel ratio in the alloy layer is less than 16% by mass, the amount of penetration during soft etching exceeds 9 μm, which is not preferable. The upper limit of the nickel ratio is 40% by mass to form a zinc-nickel alloy plating. The technical limit of the layer.

如上所述,本發明可於作為二次粒子層之銅-鈷-鎳合金鍍層上,視需要依序形成鈷-鎳合金鍍層、進而鋅-鎳合金鍍層。亦可調節該等層中之合計量之鈷附著量及鎳附著量。理想為將鈷之合計附著量設為300~4000μg/dm2,將鎳之合計附著量設為100~1500μg/dm2As described above, in the present invention, a cobalt-nickel alloy plating layer and a zinc-nickel alloy plating layer can be sequentially formed on the copper-cobalt-nickel alloy plating layer as the secondary particle layer. It is also possible to adjust the amount of cobalt adhesion and the amount of nickel attached in the total amount of the layers. It is preferable to set the total adhesion amount of cobalt to 300 to 4000 μg/dm 2 and the total adhesion amount of nickel to 100 to 1500 μg/dm 2 .

若鈷之合計附著量未達300μg/dm2,則耐熱性及耐化學品性降低,若鈷之合計附著量超過4000μg/dm2,則有產生蝕刻斑之情況,又,有傳輸損耗變大之情況。又,若鎳之合計附著量未達100μg/dm2,則有耐熱性及耐化學品性降低之情況。若鎳之合計附著量超過1500μg/dm2,則有產生蝕刻殘渣之情況,又,有傳輸損耗變大之情況。 When the total amount of adhesion of cobalt is less than 300 μg/dm 2 , heat resistance and chemical resistance are lowered. When the total amount of cobalt adheres exceeds 4000 μg/dm 2 , an etching spot is generated, and transmission loss is increased. The situation. In addition, when the total amount of adhesion of nickel is less than 100 μg/dm 2 , heat resistance and chemical resistance may be lowered. When the total amount of adhesion of nickel exceeds 1,500 μg/dm 2 , there is a case where an etching residue is generated, and a transmission loss is increased.

鈷之合計附著量較佳為300~3500μg/dm2,更佳為300~3000μg/dm2,進而較佳為300~2500μg/dm2,進而更佳為300~2000μg/dm2,鎳之合計附著量較佳為100~1000μg/dm2,更佳為100~900μg/dm2。若滿足上述條件,則無需特別受限於該段落中記載之條件。 The total deposited mass of cobalt is preferably 300 ~ 3500μg / dm 2, more preferably 300 ~ 3000μg / dm 2, and further preferably 300 ~ 2500μg / dm 2, and further more preferably 300 ~ 2000μg / dm 2, the total nickel The amount of adhesion is preferably from 100 to 1000 μg/dm 2 , more preferably from 100 to 900 μg/dm 2 . If the above conditions are satisfied, it is not necessary to be particularly limited to the conditions described in the paragraph.

其後,視需要實施防銹處理。本發明中較佳之防銹處理係鉻氧化物單獨之皮膜處理或鉻氧化物與鋅/鋅氧化物之混合物皮膜處理。所謂鉻氧化物與鋅/鋅氧化物之混合物皮膜處理,係指使用含有鋅鹽或氧化鋅與鉻酸鹽之鍍浴,藉由電鍍被覆由鋅或氧化鋅與鉻氧化物構成之鋅-鉻基混合物之防銹層的處理。 Thereafter, anti-rust treatment is performed as needed. The preferred rust-preventing treatment in the present invention is a treatment of a chromium oxide alone film or a mixture of chromium oxide and zinc/zinc oxide. The so-called treatment of a mixture of chromium oxide and zinc/zinc oxide refers to zinc-chromium consisting of zinc or zinc oxide and chromium oxide by electroplating using a plating bath containing zinc salt or zinc oxide and chromate. Treatment of the rustproof layer of the base mixture.

作為鍍浴,代表性地使用K2Cr2O7、Na2Cr2O7等重鉻酸鹽或CrO3等之至少一種、水溶性鋅鹽例如ZnO、ZnSO4-7H2O等至少一種、與氫氧化鹼(alkali hydroxide)之混合水溶液。代表之鍍浴組成與電解條件例係如下所述。 As the plating bath, at least one of a dichromate such as K 2 Cr 2 O 7 or Na 2 Cr 2 O 7 or a CrO 3 or the like, and at least one of a water-soluble zinc salt such as ZnO, ZnSO 4 -7H 2 O or the like is used. And a mixed aqueous solution with alkali hydroxide. Representative plating bath compositions and electrolytic conditions are as follows.

如此獲得之銅箔具有優異之耐熱性剝離強度、耐氧化性及耐鹽酸性。又,可利用CuCl2蝕刻液對150μm間距電路寬度以下之電路進行蝕刻,而且亦可設為鹼蝕刻。又,可抑制於軟蝕刻時向電路邊緣部滲入。 The copper foil thus obtained has excellent heat-resistant peel strength, oxidation resistance, and hydrochloric acid resistance. Further, a circuit having a circuit width of 150 μm or less can be etched by a CuCl 2 etching solution, or an alkali etching can be used. Further, it is possible to suppress penetration into the edge portion of the circuit during soft etching.

軟蝕刻液可使用H2SO4:10wt%、H2O2:2wt%之水溶液。處理時間與溫度可任意調節。 As the soft etching liquid, an aqueous solution of H 2 SO 4 : 10 wt%, H 2 O 2 : 2 wt% can be used. Processing time and temperature can be adjusted arbitrarily.

作為鹼蝕刻液,例如已知有NH4OH:6莫耳/升、NH4Cl:5莫耳/升、CuCl2:2莫耳/升(溫度50℃)等液。 As the alkali etching solution, for example, a liquid such as NH 4 OH: 6 mol/liter, NH 4 Cl: 5 mol/liter, CuCl 2 : 2 mol/liter (temperature: 50 ° C) is known.

上述全部步驟中獲得之銅箔具有黑色~灰色。黑色~灰色於對位精度及熱吸收率高之方面較有意義。例如,包含剛性基板及軟性基板之電路基板係以自動步驟搭載IC或電阻、電容器等零件,此時,一面利用感測器讀取電路一面進行晶片安裝。此時,有通過Kapton等膜進行銅箔處理面之對位之情況。又,通孔形成時之定位亦同樣。 The copper foil obtained in all the above steps has a black to gray color. Black to gray is more meaningful in terms of alignment accuracy and high heat absorption rate. For example, a circuit board including a rigid substrate and a flexible substrate is mounted with an IC, a resistor, a capacitor, or the like in an automatic step. In this case, the wafer is mounted while being read by the sensor. At this time, there is a case where the copper foil-treated surface is aligned by a film such as Kapton. Moreover, the positioning at the time of forming the through holes is also the same.

處理面越接近黑色,光之吸收越良好,因此定位之精度提高。進而,於製作基板時,多數情況下一面對銅箔與膜施加熱一面進行固化而接著。此時,於藉由使用遠紅外線、紅外線等長波段進行加熱之情形時,處理面之色調較黑者之加熱效率良好。 The closer the processing surface is to black, the better the absorption of light, so the accuracy of positioning is improved. Further, in the case of producing a substrate, in many cases, the copper foil and the film are cured while applying heat. In this case, when heating is performed by using a long wavelength band such as far infrared rays or infrared rays, the heating efficiency of the blackened surface of the treated surface is good.

最後,視需要以改善銅箔與樹脂基板之接著力為主要目的,實施於防銹層上之至少粗化面塗佈矽烷偶合劑之矽烷處理。作為該矽烷處理中使用之矽烷偶合劑,可列舉:烯烴系矽烷、環氧系矽烷、丙烯酸系矽烷、胺基系矽烷、巰基系矽烷,可適當選擇該等而使用。再者,於使用液晶聚合物作為樹脂之情形時,較佳為使用胺基系矽烷(具有胺基之矽烷)作為矽烷偶合劑。又,更佳為使用二胺基矽烷作為矽烷偶合劑。 Finally, the decane treatment of the decane coupling agent is applied to at least the roughened surface of the rustproof layer for the main purpose of improving the adhesion between the copper foil and the resin substrate as needed. The decane coupling agent to be used for the decane treatment may, for example, be an olefin decane, an epoxy decane, an acrylic decane, an amine decane or a decyl decane, and may be appropriately selected and used. Further, in the case where a liquid crystal polymer is used as the resin, it is preferred to use an amino decane (a decane having an amine group) as a decane coupling agent. Further, it is more preferred to use diaminodecane as a decane coupling agent.

塗佈方法可為利用矽烷偶合劑溶液之噴霧之吹附、利用塗佈機之塗佈、浸漬、流延等之任一種。例如,日本特公昭60-15654號中記載有藉由於銅箔之粗面側實施鉻酸鹽處理後進行矽烷偶合劑處理,而改善銅箔與樹脂基板之接著力。詳細內容請參照此。其後,如有需要,亦有為了改善銅箔之延展性而實施退火處理之情況。 The coating method may be any one of blowing by a spray of a decane coupling agent solution, coating by a coater, dipping, casting, or the like. For example, Japanese Patent Publication No. Sho 60-15654 discloses an improvement in the adhesion between a copper foil and a resin substrate by performing a chromate treatment on the rough side of the copper foil and then performing a decane coupling agent treatment. Please refer to this for details. Thereafter, if necessary, annealing treatment is also performed to improve the ductility of the copper foil.

[附載體銅箔] [with carrier copper foil]

本發明之另一實施之形態之附載體銅箔係於載體之一面或雙面依序具有中間層、極薄銅層。並且,上述極薄銅層為上述本發明之一實施之形態之高頻電路用銅箔。 The copper foil with a carrier according to another embodiment of the present invention has an intermediate layer and an extremely thin copper layer on one side or both sides of the carrier. Further, the ultra-thin copper layer is a copper foil for high-frequency circuit of the embodiment of the present invention.

<載體> <carrier>

可於本發明中使用之載體典型為金屬箔或樹脂膜,例如可以銅箔、銅合金箔、鎳箔、鎳合金箔、鐵箔、鐵合金箔、不鏽鋼箔、鋁箔、鋁合金箔、絕緣樹脂膜(例如聚醯亞胺膜、液晶聚合物(LCP)膜、聚對苯二甲酸乙二酯(PET)膜、聚醯胺膜、聚酯膜、氟樹脂膜等)之形態提供。 The carrier which can be used in the present invention is typically a metal foil or a resin film, for example, a copper foil, a copper alloy foil, a nickel foil, a nickel alloy foil, an iron foil, a ferroalloy foil, a stainless steel foil, an aluminum foil, an aluminum alloy foil, an insulating resin film. (Available, for example, in the form of a polyimide film, a liquid crystal polymer (LCP) film, a polyethylene terephthalate (PET) film, a polyamide film, a polyester film, a fluororesin film, or the like).

作為可於本發明中使用之載體,較佳為使用銅箔。由於銅箔之導電率較高,故而容易形成其後之中間層、極薄銅層。典型而言,載體係以壓延銅箔或電解銅箔之形態提供。通常,電解銅箔係於鈦或不鏽鋼之轉筒上將銅自硫酸銅鍍浴電解析出而製造,壓延銅箔係重複進行利用壓延輥之塑性加工及熱處理而製造。作為銅箔之材料,除了精銅或無氧銅等高純度銅以外,亦可使用例如摻Sn銅、摻Ag銅、添加有Cr、Zr或Mg等之銅合金、添加有Ni及Si等之卡遜系銅合金之類的銅合金。 As the carrier which can be used in the present invention, copper foil is preferably used. Since the copper foil has a high electrical conductivity, it is easy to form an intermediate layer and an extremely thin copper layer. Typically, the support is provided in the form of a rolled copper foil or an electrolytic copper foil. Usually, an electrolytic copper foil is produced by electrically analyzing copper from a copper sulfate plating bath on a drum of titanium or stainless steel, and the rolled copper foil is repeatedly produced by plastic working and heat treatment using a calender roll. As the material of the copper foil, in addition to high-purity copper such as refined copper or oxygen-free copper, for example, Sn-doped copper, Ag-doped copper, a copper alloy to which Cr, Zr, or Mg is added, or Ni and Si may be added. A copper alloy such as a copper alloy.

可於本發明中使用之載體之厚度亦無特別限制,只要發揮作 為載體之作用並且適當調節為適合之厚度即可,例如可設為5μm以上。但是,若過厚,則生產成本提高,因此通常較佳為設為35μm以下。因此,載體之厚度典型為12~70μm,更典型為18~35μm。 The thickness of the carrier which can be used in the present invention is also not particularly limited as long as it is used as a The carrier may be appropriately adjusted to a suitable thickness, and may be, for example, 5 μm or more. However, if the thickness is too large, the production cost is increased. Therefore, it is usually preferably 35 μm or less. Therefore, the thickness of the carrier is typically 12 to 70 μm, more typically 18 to 35 μm.

再者,亦可於與設置載體之極薄銅層側之表面相反之側的表面設置粗化處理層。可使用公知之方法設置該粗化處理層,亦可藉由上述粗化處理設置。於與設置載體之極薄銅層側之表面相反之側的表面設置粗化處理層之情況具有如下優點:將載體自具有該粗化處理層之表面側積層於樹脂基板等支撐體時,載體與樹脂基板不易剝離。 Further, a roughened layer may be provided on the surface opposite to the surface on the side of the ultra-thin copper layer on which the carrier is provided. The roughening treatment layer can be provided by a known method, or can be set by the above-described roughening treatment. The case where the roughened layer is provided on the surface opposite to the surface on the side where the ultra-thin copper layer side of the carrier is provided has the advantage that when the carrier is laminated on the surface of the resin substrate or the like from the surface side having the roughened layer, the carrier It is not easily peeled off from the resin substrate.

<中間層> <intermediate layer>

於載體上設置中間層。亦可於載體與中間層之間設置其他層。本發明中使用之中間層只要為如下構成則並無特別限定:於附載體銅箔向絕緣基板積層之步驟前極薄銅層不易自載體剝離,另一方面,於向絕緣基板之積層之步驟後極薄銅層可自載體剝離。例如,本發明之附載體銅箔之中間層亦可含有選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn、該等之合金、該等之水合物、該等之氧化物、有機物所組成之群一種或二種以上。又,中間層亦可為複數層。 An intermediate layer is provided on the carrier. Other layers may also be provided between the carrier and the intermediate layer. The intermediate layer used in the present invention is not particularly limited as long as it is a structure in which the ultra-thin copper layer is not easily peeled off from the carrier before the step of laminating the carrier copper foil to the insulating substrate, and the step of laminating the insulating substrate is performed. The rear ultra-thin copper layer can be peeled off from the carrier. For example, the intermediate layer of the copper foil with a carrier of the present invention may further contain a compound selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, such alloys, and the like, One or more of the group consisting of such oxides and organic substances. Also, the intermediate layer may be a plurality of layers.

又,例如,中間層可藉由如下方式構成:自載體側形成由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種元素構成的單一金屬層,或者由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種或二種以上之元素構成的合金層,於其上形成由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種或二種以上之元素之水合物或氧化物或有機物構成的層,或者由選自由Cr、Ni、Co、 Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種之元素構成的單一金屬層,或者由選自由Cr、Ni、Co、Fe、Mo、Ti、W、P、Cu、Al、Zn組成之元素群一種或二種以上之元素構成的合金層。 Further, for example, the intermediate layer may be configured by forming a single one composed of an element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn from the carrier side. a metal layer or an alloy layer composed of one or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, and Zn, formed thereon a layer composed of one or more elements of a group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, or an oxide or an organic substance, or selected from Cr , Ni, Co, a single metal layer composed of an element consisting of Fe, Mo, Ti, W, P, Cu, Al, and Zn, or selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, An alloy layer composed of one or two or more elements of an element group of Al and Zn.

於僅於單面設置中間層之情形時,較佳為於與載體相反之面設置Ni鍍層等防銹層。再者,於利用鉻酸鹽處理或鋅鉻酸鹽處理或鍍敷處理設置中間層之情形時,可認為有鉻或鋅等附著之金屬之一部分成為水合物或氧化物之情形。 In the case where the intermediate layer is provided only on one side, it is preferable to provide a rustproof layer such as a Ni plating layer on the surface opposite to the carrier. Further, in the case where the intermediate layer is provided by chromate treatment or zinc chromate treatment or plating treatment, it is considered that a part of the metal to which the chromium or zinc adheres is a hydrate or an oxide.

又,例如,中間層可於載體上依序積層鎳、鎳-磷合金或鎳-鈷合金、以及鉻而構成。鎳與銅之接著力高於鉻與銅之接著力,因此於剝離極薄銅層時,於極薄銅層與鉻之界面剝離。又,對中間層之鎳期待防止銅成分自載體擴散至極薄銅層之障壁效果。中間層中之鎳之附著量較佳為100μg/dm2以上40000μg/dm2以下,更佳為100μg/dm2以上4000μg/dm2以下,進而較佳為100μg/dm2以上2500μg/dm2以下,進而更佳為100μg/dm2以上且未達1000μg/dm2,中間層中之鉻之附著量較佳為5μg/dm2以上100μg/dm2以下。 Further, for example, the intermediate layer may be formed by sequentially laminating nickel, a nickel-phosphorus alloy, a nickel-cobalt alloy, and chromium on a carrier. The adhesion between nickel and copper is higher than the adhesion between chromium and copper. Therefore, when the ultra-thin copper layer is peeled off, the interface between the ultra-thin copper layer and chromium is peeled off. Further, the nickel of the intermediate layer is expected to have a barrier effect of preventing the copper component from diffusing from the carrier to the extremely thin copper layer. Adhesion amount of the intermediate layer of nickel, preferably 100μg / dm 2 or more 40000μg / dm 2 or less, more preferably 100μg / dm 2 or more 4000μg / dm 2 or less, and further preferably 100μg / dm 2 or more 2500μg / dm 2 or less More preferably, it is 100 μg/dm 2 or more and less than 1000 μg/dm 2 , and the amount of chromium deposited in the intermediate layer is preferably 5 μg/dm 2 or more and 100 μg/dm 2 or less.

<極薄銅層> <very thin copper layer>

於中間層上設置極薄銅層。亦可於中間層與極薄銅層之間設置其他層。極薄銅層可藉由利用硫酸銅、焦磷酸銅、胺基磺酸銅、氰化銅等之電解浴之電鍍而形成,就以通常之電解銅箔之形式使用,以高電流密度可形成銅箔之方面而言,較佳為硫酸銅浴。極薄銅層之厚度並無特別限制,通常薄於載體例如為12μm以下。典型為0.5~12μm,更典型為1~5μm,進而典型為1.5~5μm,進而典型為2~5μm。再者,亦可於載體之雙面設 置極薄銅層。 An extremely thin copper layer is provided on the intermediate layer. Other layers may be provided between the intermediate layer and the ultra-thin copper layer. The ultra-thin copper layer can be formed by electroplating using an electrolytic bath of copper sulfate, copper pyrophosphate, copper sulfonate, copper cyanide or the like, and is used in the form of a usual electrolytic copper foil to form at a high current density. In terms of copper foil, a copper sulfate bath is preferred. The thickness of the ultra-thin copper layer is not particularly limited, and is usually thinner than the carrier, for example, 12 μm or less. It is typically 0.5 to 12 μm, more typically 1 to 5 μm, and is typically 1.5 to 5 μm, and is typically 2 to 5 μm. Furthermore, it can also be provided on both sides of the carrier. Set a very thin copper layer.

如此製造具備載體、積層於載體上之中間層、積層於中間層上之極薄銅層的附載體銅箔。關於附載體銅箔本身之使用方法為業者所周知,例如可將極薄銅層之表面貼合於紙基材酚系樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布/紙複合基材環氧樹脂、玻璃布/玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂、聚酯膜、聚醯亞胺膜等絕緣基板上並進行熱壓接後,剝離載體製成覆銅積層板,將接著於絕緣基板之極薄銅層蝕刻成目標導體圖案,最終可製造印刷配線板。 A carrier-attached copper foil having a carrier, an intermediate layer laminated on the carrier, and an extremely thin copper layer laminated on the intermediate layer was produced in this manner. The method of using the copper foil itself is well known. For example, the surface of the ultra-thin copper layer can be bonded to a paper substrate phenol resin, a paper substrate epoxy resin, a synthetic fiber cloth substrate epoxy resin, or a glass. After the cloth/paper composite substrate epoxy resin, the glass cloth/glass non-woven composite substrate epoxy resin, the glass cloth substrate epoxy resin, the polyester film, the polyimide film, and the like, and is thermocompression bonded, The peeling carrier is used to form a copper clad laminate, and the ultra-thin copper layer next to the insulating substrate is etched into a target conductor pattern, and finally a printed wiring board can be manufactured.

又,具備載體、積層於載體上之中間層、與積層於中間層上之極薄銅層的附載體銅箔可於上述極薄銅層上具備粗化處理層,於上述粗化處理層上具備一種以上之選自由耐熱層、防銹層、鉻酸鹽(處理)層及矽烷偶合(處理)層組成之群之層。 Further, the carrier-attached copper foil including a carrier, an intermediate layer laminated on the carrier, and an ultra-thin copper layer laminated on the intermediate layer may have a roughened layer on the ultra-thin copper layer on the roughened layer There is provided one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventive layer, a chromate (treatment) layer, and a decane coupling (treatment) layer.

[樹脂層] [resin layer]

亦可於本發明之高頻電路用銅箔(亦包含高頻電路用銅箔為附載體銅箔之極薄銅層之情形)之二次粒子層之表面形成樹脂層。又,樹脂層可形成於分別形成在高頻電路用銅箔之二次粒子層上的由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層之表面,可形成於鉻酸鹽層之表面,可形成於矽烷偶合層之表面,亦可形成於Ni-Zn合金層之表面。又,樹脂層更佳為形成於高頻電路用銅箔之最表面。又,上述附載體銅箔亦可於上述粗化處理層上、或者上述耐熱層、防銹層、或鉻酸鹽(處理)層、或矽烷偶合(處理)層上具備樹脂層。上述樹脂層亦可為絕緣樹脂層。 A resin layer may be formed on the surface of the secondary particle layer of the copper foil for high-frequency circuit of the present invention (including the case where the copper foil for high-frequency circuit is a very thin copper layer with a carrier copper foil). Further, the resin layer may be formed of Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, respectively, formed on the secondary particle layer of the high-frequency circuit copper foil. The surface of the alloy layer composed of one or more elements of the composition of As and Ti may be formed on the surface of the chromate layer, may be formed on the surface of the decane coupling layer, or may be formed on the surface of the Ni-Zn alloy layer. Further, the resin layer is more preferably formed on the outermost surface of the copper foil for high-frequency circuits. Further, the copper foil with a carrier may be provided with a resin layer on the roughened layer or the heat-resistant layer, the rustproof layer, the chromate (treatment) layer, or the decane coupling (treatment) layer. The above resin layer may also be an insulating resin layer.

上述樹脂層可為接著劑,亦可為接著用半硬化狀態(B階段狀態)之絕緣樹脂層。半硬化狀態(B階段狀態)包括如下狀態:即便用手指觸摸其表面亦無黏著感,可將該絕緣樹脂層重疊而保管,若進而進行加熱處理,則會引起硬化反應。 The resin layer may be an adhesive or an insulating resin layer which is followed by a semi-hardened state (B-stage state). The semi-hardened state (B-stage state) includes a state in which the insulating resin layer is superimposed and stored even if the surface is touched with a finger, and the heat-treated reaction is caused by the heat treatment.

又,上述樹脂層可含有熱硬化性樹脂,亦可為熱塑性樹脂。又,上述樹脂層亦可含有熱塑性樹脂。其種類並無特別限定,作為較佳者,例如可列舉包括環氧樹脂、聚醯亞胺樹脂、多官能性氰酸酯化合物、順丁烯二醯亞胺化合物、聚乙烯醇縮乙醛樹脂、胺酯樹脂等之樹脂。 Further, the resin layer may contain a thermosetting resin or a thermoplastic resin. Further, the resin layer may contain a thermoplastic resin. The type thereof is not particularly limited, and examples thereof include an epoxy resin, a polyimide resin, a polyfunctional cyanate compound, a maleimide compound, and a polyvinyl acetal resin. A resin such as an amine ester resin.

上述樹脂層可含有公知之樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體(可使用含有無機化合物及/或有機化合物之介電體、含有金屬氧化物之介電體等任一種介電體)、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等。又,上述樹脂層例如可使用如下文獻中記載之物質(樹脂、樹脂硬化劑、化合物、硬化促進劑、介電體、反應觸媒、交聯劑、聚合物、預浸體、骨架材料等)及/或樹脂層之形成方法、形成裝置而形成:國際公開編號WO2008/004399、國際公開編號WO2008/053878、國際公開編號WO2009/084533、日本特開平11-5828號、日本特開平11-140281號、日本專利第3184485號、國際公開編號WO97/02728、日本專利第3676375號、日本特開2000-43188號、日本專利第3612594號、日本特開2002-179772號、日本特開2002-359444號、日本特開2003-304068號、日本專利第3992225號、日本特開2003-249739號、日本專利第4136509號、日本特開2004-82687號、日本專利第4025177號、日本特開2004-349654號、日本專利第4286060號、日本特開2005-262506號、日本專利第4570070 號、日本特開2005-53218號、日本專利第3949676號、日本專利第4178415號、國際公開編號WO2004/005588、日本特開2006-257153號、日本特開2007-326923號、日本特開2008-111169號、日本專利第5024930號、國際公開編號WO2006/028207、日本專利第4828427號、日本特開2009-67029號、國際公開編號WO2006/134868、日本專利第5046927號、日本特開2009-173017號、國際公開編號WO2007/105635、日本專利第5180815號、國際公開編號WO2008/114858、國際公開編號WO2009/008471、日本特開2011-14727號、國際公開編號WO2009/001850、國際公開編號WO2009/145179、國際公開編號WO2011/068157、日本特開2013-19056號。 The resin layer may contain a known resin, a resin curing agent, a compound, a curing accelerator, and a dielectric (a dielectric containing an inorganic compound and/or an organic compound, or a dielectric containing a metal oxide may be used. Electrochemical), reaction catalyst, crosslinking agent, polymer, prepreg, framework material, and the like. Further, as the resin layer, for example, those described in the following documents (resin, resin curing agent, compound, curing accelerator, dielectric, reaction catalyst, crosslinking agent, polymer, prepreg, skeleton material, etc.) can be used. And/or a method for forming a resin layer, and a device for forming the same: International Publication No. WO2008/004399, International Publication No. WO2008/053878, International Publication No. WO2009/084533, Japanese Patent Laid-Open No. Hei No. 11-5828, Japanese Patent Laid-Open No. 11-140281 Japanese Patent No. 3,184,485, International Publication No. WO97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179772, Japanese Patent Application No. 2002-359444, Japanese Patent Laid-Open No. 2003-304068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003-249739, Japanese Patent No. 4136509, Japanese Patent Laid-Open No. 2004-82687, Japanese Patent No. 4025177, and Japanese Patent Laid-Open No. 2004-349654 Japanese Patent No. 4286060, Japanese Patent Laid-Open No. 2005-262506, Japanese Patent No. 4570070 No. 2005-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004/005588, Japanese Patent Laid-Open No. 2006-257153, Japanese Patent Laid-Open No. 2007-326923, Japanese Special Open 2008- No. 111169, Japanese Patent No. 5024930, International Publication No. WO2006/028207, Japanese Patent No. 4828427, Japanese Patent Laid-Open No. 2009-67029, International Publication No. WO2006/134868, Japanese Patent No. 5046927, Japanese Patent Laid-Open No. 2009-173017 , International Publication No. WO2007/105635, Japanese Patent No. 5180815, International Publication No. WO2008/114858, International Publication No. WO2009/008471, Japanese Patent Laid-Open No. 2011-14727, International Publication No. WO2009/001850, International Publication No. WO2009/145179, International Publication No. WO2011/068157, Japanese Patent Laid-Open No. 2013-19056.

將該等樹脂溶解於例如甲基乙基酮(MEK)、甲苯等之溶劑中而製成樹脂液,藉由例如輥塗佈法等將其塗佈於上述銅箔上或極薄銅層上、或上述耐熱層、防銹層、或上述鉻酸鹽皮膜層、或上述矽烷偶合劑層上,繼而視需要進行加熱乾燥去除溶劑而成為B階段狀態。乾燥只要使用例如熱風乾燥爐即可,乾燥溫度只要為100~250℃、較佳為130~200℃即可。 The resin is dissolved in a solvent such as methyl ethyl ketone (MEK) or toluene to prepare a resin liquid, which is applied onto the copper foil or the ultra-thin copper layer by, for example, a roll coating method. Or the heat-resistant layer, the rust-preventive layer, or the chromate film layer or the decane coupling agent layer, and then heat-dried as needed to remove the solvent to be in a B-stage state. For drying, for example, a hot air drying oven may be used, and the drying temperature may be 100 to 250 ° C, preferably 130 to 200 ° C.

具備上述樹脂層之高頻電路用銅箔(附有樹脂之高頻電路用銅箔)係將其樹脂層與基材重疊後將整體熱壓接而使該樹脂層熱硬化,繼而以使銅箔形成特定之配線圖案之態樣使用。 A copper foil for a high-frequency circuit (a copper foil for a high-frequency circuit with a resin) having the above-mentioned resin layer is formed by laminating a resin layer and a base material, and then thermally bonding the entire resin layer to thermally cure the resin layer, and then copper is used. The foil is used in the form of a specific wiring pattern.

又,具備上述樹脂層之附載體銅箔(附有樹脂之附載體銅箔)係將其樹脂層與基材重疊後將整體熱壓接而使該樹脂層熱硬化,繼而將載體剝離而露出極薄銅層(當然,露出的是該極薄銅層之中間層側之表面),因此以形成特定之配線圖案之態樣使用。 Further, the carrier-attached copper foil (resin-attached copper foil with resin) having the resin layer is formed by laminating a resin layer and a base material, and then thermally bonding the entire resin layer to thermally cure the resin layer, and then peeling off the carrier to expose The ultra-thin copper layer (of course, the surface on the intermediate layer side of the ultra-thin copper layer is exposed) is thus used in the form of forming a specific wiring pattern.

若使用該附有樹脂之高頻電路用銅箔或附有樹脂之附載體銅箔,則可減少製造多層印刷配線基板時之預浸體材料之使用片數。而且,將樹脂層之厚度設為可確保層間絕緣之厚度,或者即便完全不使用預浸體材料亦可製造覆銅積層板。又,此時,亦可於基材之表面底塗絕緣樹脂而進一步改善表面之平滑性。 When the copper foil for a high-frequency circuit with a resin or a copper foil with a resin attached thereto is used, the number of sheets of the prepreg material used in the production of the multilayer printed wiring board can be reduced. Further, the thickness of the resin layer is set to ensure the thickness of the interlayer insulation, or the copper clad laminate can be produced even if the prepreg material is not used at all. Further, at this time, the surface of the substrate may be primed with an insulating resin to further improve the smoothness of the surface.

再者,於不使用預浸體材料之情形時,可節約預浸體材料之材料成本,又,積層步驟亦變得簡略,因此於經濟上較為有利,而且,具有如下優點:僅製造預浸體材料之厚度程度的多層印刷配線基板之厚度變薄,可製造1層厚度為100μm以下之極薄之多層印刷配線基板。 Moreover, when the prepreg material is not used, the material cost of the prepreg material can be saved, and the lamination step is also simplified, which is economically advantageous, and has the following advantages: only prepreg is manufactured. The thickness of the multilayer printed wiring board of the thickness of the bulk material is reduced, and it is possible to manufacture a very thin multilayer printed wiring board having a thickness of 100 μm or less.

該樹脂層之厚度較佳為0.1~80μm。 The thickness of the resin layer is preferably from 0.1 to 80 μm.

若樹脂層之厚度薄於0.1μm,則有如下情況:接著力降低,不經由預浸體材料而將該附有樹脂之附載體銅箔積層於具備內層材之基材上時,難以確保內層材與電路之間之層間絕緣。 When the thickness of the resin layer is less than 0.1 μm, there is a case where the adhesion is lowered, and it is difficult to ensure that the resin-attached copper foil with a resin is laminated on the substrate having the inner layer material without passing through the prepreg material. The interlayer insulation between the inner layer and the circuit.

另一方面,若樹脂層之厚度厚於80μm,則難以利用1次塗佈步驟形成目標厚度之樹脂層,而需要多餘之材料費和步驟數,因此於經濟上變得不利。進而,所形成之樹脂層之可撓性較差,因此存在如下情況:於操作時容易產生龜裂等,又,於熱壓接於內層材時會引起過度之樹脂流動而難以圓滑地進行積層。 On the other hand, when the thickness of the resin layer is thicker than 80 μm, it is difficult to form a resin layer having a target thickness by one application step, and an unnecessary material cost and number of steps are required, which is economically disadvantageous. Further, since the resin layer formed is inferior in flexibility, cracks and the like are likely to occur during handling, and excessive resin flow is caused when thermocompression bonding to the inner layer material, and it is difficult to smoothly laminate. .

再者,作為附有樹脂之附載體銅箔之另一個製品形態,亦可以樹脂層被覆於上述極薄銅層上、或上述耐熱層、防銹層、或上述鉻酸鹽層、或上述矽烷偶合層上,於成為半硬化狀態後,繼而將載體剝離,以不存在載體之附有樹脂之銅箔(極薄銅層)之形式進行製造。 Further, as another product form of the copper foil with a resin attached thereto, a resin layer may be coated on the ultra-thin copper layer, or the heat-resistant layer, the rust-proof layer, or the chromate layer or the decane described above. On the coupling layer, after being in a semi-hardened state, the carrier is subsequently peeled off, and it is produced in the form of a resin-attached copper foil (very thin copper layer) in which no carrier is present.

此處,以下,表示若干使用本發明之附載體銅箔之印刷配線板之製造步驟之例。 Here, the following is an example of a manufacturing procedure of a plurality of printed wiring boards using the copper foil with a carrier of the present invention.

本發明之印刷配線板之製造方法之一實施形態含有如下步驟:準備本發明之附載體銅箔與絕緣基板;將上述附載體銅箔與絕緣基板積層;及以使極薄銅層側與絕緣基板對向之方式將上述附載體銅箔與絕緣基板積層後,經過將上述附載體銅箔之載體剝離之步驟而形成覆銅積層板,然後,藉由半加成法、改良半加成法、部分加成法及減成法之任一種方法形成電路。絕緣基板亦可設為內層電路入口。 An embodiment of the method for producing a printed wiring board according to the present invention comprises the steps of: preparing a copper foil with an insulating substrate of the present invention and an insulating substrate; laminating the copper foil with the carrier and the insulating substrate; and insulating the side of the ultra-thin copper layer After the substrate is laminated, the copper foil with the carrier and the insulating substrate are laminated, and then the copper-clad laminate is formed by peeling off the carrier of the copper foil with the carrier, and then the semi-additive method and the modified semi-additive method are used. Any method of partial addition and subtraction forms a circuit. The insulating substrate can also be set as an inner layer circuit inlet.

於本發明中,所謂半加成法,係指含有如下情況之方法:於絕緣基板或銅箔晶種層上進行薄之無電解鍍敷,形成鍍敷阻劑之圖案後,進行電鍍、鍍敷阻劑之去除及蝕刻,藉此形成導體圖案。 In the present invention, the term "semi-additive method" refers to a method of performing electroless plating on an insulating substrate or a copper foil seed layer, forming a pattern of a plating resist, and then performing electroplating and plating. The resist is removed and etched, thereby forming a conductor pattern.

於本發明中,所謂改良半加成法,係指含有如下情況之方法:於絕緣層上積層金屬箔,利用鍍敷阻劑保護非電路形成部,藉由電解鍍敷增厚電路形成部之銅厚後,去除抗蝕劑,利用(快速)蝕刻去除上述電路形成部以外之金屬箔,藉此於絕緣層上形成電路。 In the present invention, the modified semi-additive method refers to a method of laminating a metal foil on an insulating layer, protecting a non-circuit forming portion by a plating resist, and thickening the circuit forming portion by electrolytic plating. After the copper is thick, the resist is removed, and the metal foil other than the circuit formation portion is removed by (rapid) etching, thereby forming a circuit on the insulating layer.

於本發明中,所謂部分加成法,係指利用含有如下情況之方法而製造印刷配線板的方法:於設置導體層而成之基板、視需要穿過通孔或輔助孔用之孔而成之基板上賦予觸媒核,進行蝕刻形成導體電路,視需要設置阻焊劑或鍍敷阻劑後,於上述導體電路上藉由無電解鍍敷處理對通孔或輔助孔等進行增厚。 In the present invention, the partial addition method refers to a method of manufacturing a printed wiring board by a method in which a substrate having a conductor layer is formed, and a hole for a through hole or an auxiliary hole is formed as needed. A catalyst core is applied to the substrate, and a conductor circuit is formed by etching. If a solder resist or a plating resist is provided as needed, the via hole or the auxiliary hole or the like is thickened on the conductor circuit by electroless plating.

於本發明中,所謂減成法,係指含有如下情況之方法:藉由蝕刻等選擇性地去除覆銅積層板上之銅箔之不需要部分而形成導體圖案。 In the present invention, the subtractive method refers to a method of forming a conductor pattern by selectively removing unnecessary portions of the copper foil on the copper clad laminate by etching or the like.

再者,於本發明中,可使用公知之方法作為半加成法、改良半加成法、部分加成法及減成法。又,於本發明中,上述半加成法、改良半加成法、部分加成法及減成法中,亦可於絕緣基板等設置通孔或/及盲孔。 Further, in the present invention, a known method can be used as a semi-additive method, a modified semi-additive method, a partial addition method, and a subtractive method. Further, in the present invention, in the semi-additive method, the modified semi-additive method, the partial addition method, and the subtractive method, through holes or/and blind holes may be provided in the insulating substrate or the like.

此處,使用圖式對本發明之使用附載體銅箔之印刷配線板之製造方法之具體例詳細地進行說明。 Here, a specific example of a method of manufacturing a printed wiring board using a carrier-attached copper foil of the present invention will be described in detail with reference to the drawings.

首先,如圖5-A所示,準備具有表面形成有粗化處理層之極薄銅層的附載體銅箔(第1層)。 First, as shown in Fig. 5-A, a carrier-attached copper foil (first layer) having an extremely thin copper layer having a roughened layer formed thereon is prepared.

其次,如圖5-B所示,於極薄銅層之粗化處理層上塗佈抗蝕劑,進行曝光、顯影,將抗蝕劑蝕刻為特定之形狀。 Next, as shown in FIG. 5-B, a resist is applied onto the roughened layer of the ultra-thin copper layer, exposed and developed, and the resist is etched into a specific shape.

其次,如圖5-C所示,於形成電路用鍍敷後,去除抗蝕劑,藉此形成特定之形狀之電路鍍敷。 Next, as shown in FIG. 5-C, after the plating for forming the circuit, the resist is removed, thereby forming a circuit plating of a specific shape.

其次,如圖6-D所示,以被覆電路鍍敷之方式(以埋沒電路鍍敷之方式)於極薄銅層上設置埋入樹脂而積層樹脂層,繼而,自極薄銅層側接著另一附載體銅箔(第2層)。 Next, as shown in FIG. 6-D, a resin layer is laminated on the ultra-thin copper layer by plating the coated circuit (by plating the buried circuit), and then the resin layer is laminated on the side of the ultra-thin copper layer. Another carrier copper foil (layer 2).

其次,如圖6-E所示,自第2層之附載體銅箔剝離載體。 Next, as shown in Fig. 6-E, the carrier is peeled off from the carrier copper foil of the second layer.

其次,如圖6-F所示,於樹脂層之特定位置進行雷射開孔,露出電路鍍敷而形成盲孔。 Next, as shown in Fig. 6-F, a laser opening is performed at a specific position of the resin layer to expose the circuit plating to form a blind hole.

其次,如圖7-G所示,於盲孔中埋入銅,形成通孔填充物。 Next, as shown in Fig. 7-G, copper is buried in the blind via to form a via fill.

其次,如圖7-H所示,於通孔填充物上,以上述圖5-B及圖5-C之方式形成電路鍍敷。 Next, as shown in Fig. 7-H, circuit plating is formed on the via fill in the manner of Fig. 5-B and Fig. 5-C described above.

其次,如圖7-I所示,自第1層之附載體銅箔剝離載體。 Next, as shown in Fig. 7-I, the carrier is peeled off from the carrier copper foil of the first layer.

其次,如圖8-J所示,藉由快速蝕刻去除兩表面之極薄銅層,使樹脂層內之電路鍍敷之表面露出。 Next, as shown in Fig. 8-J, the extremely thin copper layer on both surfaces is removed by rapid etching to expose the surface of the circuit plating in the resin layer.

其次,如圖8-K所示,於樹脂層內之電路鍍敷上形成凸塊,於該焊料上形成銅柱。如此製作使用本發明之附載體銅箔之印刷配線板。 Next, as shown in Fig. 8-K, bumps are formed on the circuit plating in the resin layer, and copper pillars are formed on the solder. Thus, a printed wiring board using the copper foil with a carrier of the present invention was produced.

上述另一附載體銅箔(第2層)可使用本發明之附載體銅箔,可使用習知之附載體銅箔,進而亦可使用通常之銅箔。又,可於圖7-H所示之第2層之電路上進而形成1層或複數層電路,可藉由半加成法、減成法、部分加成法或改良半加成法之任一種方法形成該等電路。 The above-mentioned other carrier copper foil (second layer) can be used with the copper foil with a carrier of the present invention, and a conventional copper foil with a carrier can be used, and a usual copper foil can also be used. Further, a layer 1 or a plurality of layers may be further formed on the circuit of the second layer shown in FIG. 7-H, and may be subjected to a semi-additive method, a subtractive method, a partial addition method or a modified semi-additive method. One method forms the circuits.

藉由如上所述之印刷配線板之製造方法,形成使電路鍍敷埋入樹脂層之構成,因此於例如圖8-J所示之利用快速蝕刻去除極薄銅層時,藉由樹脂層保護電路鍍敷,並保持其形狀,藉此容易形成微細電路。又,由於藉由樹脂層保護電路鍍敷,故而耐電子遷移性提高,可良好地抑制電路之配線之導通。因此,容易形成微細電路。又,於圖8-J及圖8-K所表示般藉由快速蝕刻去除極薄銅層時,電路鍍敷之露出面成為自樹脂層凹陷之形狀,因此容易於該電路鍍敷上形成凸塊,進而於其上形成銅柱,從而提高製造效率。 According to the manufacturing method of the printed wiring board as described above, the structure in which the circuit plating is embedded in the resin layer is formed. Therefore, when the ultra-thin copper layer is removed by rapid etching as shown in, for example, FIG. 8-J, the resin layer is protected. The circuit is plated and maintained in shape, whereby it is easy to form a fine circuit. Moreover, since the resin layer protection circuit is plated, the electron mobility resistance is improved, and the wiring of the circuit can be satisfactorily suppressed. Therefore, it is easy to form a fine circuit. Further, when the ultra-thin copper layer is removed by rapid etching as shown in FIG. 8-J and FIG. 8-K, the exposed surface of the circuit plating becomes a shape recessed from the resin layer, so that it is easy to form a convex on the circuit plating. The block, which in turn forms a copper pillar thereon, improves manufacturing efficiency.

再者,埋入樹脂(Resin)可使用公知之樹脂、預浸體。例如可使用BT(雙順丁烯二醯亞胺三)樹脂或含浸BT樹脂之玻璃布即預浸體、Ajinomoto Fine-Techno股份有限公司製造之ABF膜或ABF。又,上述埋入樹脂(Resin)可使用本說明書中記載之樹脂層及/或樹脂及/或預浸體。 Further, a well-known resin or prepreg can be used as the resin (Resin). For example, BT (bis-s-butylene diimide III) can be used. A resin or a glass cloth impregnated with a BT resin, that is, a prepreg, an ABF film manufactured by Ajinomoto Fine-Techno Co., Ltd. or ABF. Further, as the above-mentioned embedded resin (Resin), the resin layer and/or the resin and/or the prepreg described in the present specification can be used.

又,關於上述用於第一層之附載體銅箔,於該附載體銅箔之 表面可具有基板或樹脂層。藉由具有該基板或樹脂層而用於第一層之附載體銅箔受到支撐,變得不易產生皺褶,因此有提高生產性之優點。再者,只要上述基板或樹脂層具有支撐上述用於第一層之附載體銅箔之效果,則可使用全部基板或樹脂層。例如,可使用本案說明書中記載之載體、預浸體、樹脂層或公知之載體、預浸體、樹脂層、金屬板、金屬箔、無機化合物之板、無機化合物之箔、有機化合物之板、有機化合物之箔作為上述基板或樹脂層。 Further, regarding the above-mentioned copper foil with a carrier for the first layer, the copper foil with the carrier The surface may have a substrate or a resin layer. The copper foil with a carrier used for the first layer having the substrate or the resin layer is supported, and wrinkles are less likely to occur, so that productivity is improved. Further, as long as the substrate or the resin layer has an effect of supporting the above-described carrier-attached copper foil for the first layer, all of the substrate or the resin layer can be used. For example, a carrier, a prepreg, a resin layer or a known carrier, a prepreg, a resin layer, a metal plate, a metal foil, a plate of an inorganic compound, a foil of an inorganic compound, a plate of an organic compound, or a plate of an organic compound, which are described in the present specification, may be used. A foil of an organic compound is used as the above substrate or resin layer.

[實施例] [Examples]

以下,基於實施例及比較例進行說明。再者,本實施例僅為一例,並不僅受限於該例。即,包含本發明所含之其他態樣或變形。再者,以下實施例1~6、11~15及比較例1~5之原箔使用標準壓延銅箔TPC(以JIS H3100 C1100為標準之精銅,JX Nippon Mining & Metals製造)18μm。 Hereinafter, description will be made based on examples and comparative examples. Furthermore, this embodiment is only an example and is not limited to this example. That is, other aspects or modifications included in the present invention are included. Further, the original foils of the following Examples 1 to 6, 11 to 15, and Comparative Examples 1 to 5 were made of a standard rolled copper foil TPC (fine copper of JIS H3100 C1100, manufactured by JX Nippon Mining & Metals) of 18 μm.

又,實施例7~10之原箔使用藉由以下方法製造之附載體銅箔。 Further, the original foils of Examples 7 to 10 used the carrier-attached copper foil produced by the following method.

實施例7~10係準備厚度18μm之電解銅箔(JX Nippon Mining & Metals製造之JTC箔)作為載體,實施例12係準備上述厚度18μm之標準壓延銅箔TPC作為載體。並且,於下述條件下於載體之表面形成中間層,於中間層之表面形成極薄銅層。再者,於載體為電解銅箔之情形時,於光澤面(S面)形成中間層。 In Examples 7 to 10, an electrolytic copper foil (JTC foil manufactured by JX Nippon Mining & Metals) having a thickness of 18 μm was prepared as a carrier, and in Example 12, a standard rolled copper foil TPC having a thickness of 18 μm was prepared as a carrier. Further, an intermediate layer was formed on the surface of the carrier under the following conditions, and an extremely thin copper layer was formed on the surface of the intermediate layer. Further, in the case where the carrier is an electrolytic copper foil, an intermediate layer is formed on the shiny side (S surface).

‧實施例7 ‧Example 7 <中間層> <intermediate layer>

(1)Ni層(Ni鍍敷) (1) Ni layer (Ni plating)

於以下條件下,利用輥對輥型之連接鍍敷線對載體進行電鍍,藉此形 成1000μg/dm2之附著量之Ni層。具體之鍍敷條件記載如下。 The carrier was plated by a roll-to-roll type connection plating line under the following conditions, thereby forming a Ni layer having an adhesion amount of 1000 μg/dm 2 . The specific plating conditions are described below.

硫酸鎳:270~280g/L Nickel sulfate: 270~280g/L

氯化鎳:35~45g/L Nickel chloride: 35~45g/L

乙酸鎳:10~20g/L Nickel acetate: 10~20g/L

硼酸:30~40g/L Boric acid: 30~40g/L

光澤劑:糖精、丁炔二醇等 Gloss agent: saccharin, butynediol, etc.

十二烷基硫酸鈉:55~75ppm Sodium lauryl sulfate: 55~75ppm

pH值:4~6 pH: 4~6

浴溫:55~65℃ Bath temperature: 55~65°C

電流密度:10A/dm2 Current density: 10A/dm 2

(2)Cr層(電解鉻酸鹽處理) (2) Cr layer (electrolytic chromate treatment)

其次,將(1)中所形成之Ni層表面水洗及酸洗後,繼而,於輥對輥型之連接鍍敷線上,藉由於以下條件下對11μg/dm2之附著量之Cr層進行電解鉻酸鹽處理而使之附著於Ni層上。 Next, the surface of the Ni layer formed in (1) is washed with water and pickled, and then, on the roll-to-roll type connection plating line, the Cr layer of 11 μg/dm 2 is electrolyzed by the following conditions. The chromate is treated to adhere to the Ni layer.

重鉻酸鉀1~10g/L、鋅0g/L Potassium dichromate 1~10g/L, zinc 0g/L

pH值:7~10 pH: 7~10

液溫:40~60℃ Liquid temperature: 40~60°C

電流密度:2A/dm2 Current density: 2A/dm 2

<極薄銅層> <very thin copper layer>

其次,將(2)中所形成之Cr層表面水洗及酸洗後,繼而,於輥對輥型之連接鍍敷線上,藉由於以下條件下電鍍厚度1.5μm之極薄銅層而使之形成於Cr層上,從而製作附載體銅箔。 Next, the surface of the Cr layer formed in (2) is washed with water and pickled, and then formed on a roll-to-roll type connection plating line by plating an extremely thin copper layer having a thickness of 1.5 μm under the following conditions. On the Cr layer, a copper foil with a carrier was produced.

銅濃度:90~110g/L Copper concentration: 90~110g/L

硫酸濃度:90~110g/L Sulfuric acid concentration: 90~110g/L

氯化物離子濃度:50~90ppm Chloride ion concentration: 50~90ppm

調平劑1(雙(3-磺丙基)二硫醚):10~30ppm Leveling agent 1 (bis(3-sulfopropyl) disulfide): 10~30ppm

調平劑2(胺化合物):10~30ppm Leveling agent 2 (amine compound): 10~30ppm

再者,使用下述胺化合物作為調平劑2。 Further, the following amine compound was used as the leveling agent 2.

(上述化學式中,R1及R2選自由羥基烷基、醚基、芳基、芳香族取代烷基、不飽和烴基、烷基所組成之群) (In the above chemical formula, R 1 and R 2 are selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group)

電解液溫度:50~80℃ Electrolyte temperature: 50~80°C

電流密度:100A/dm2 Current density: 100A/dm 2

電解液線速度:1.5~5m/sec Electrolyte line speed: 1.5~5m/sec

‧實施例8 ‧Example 8 <中間層> <intermediate layer>

(1)Ni-Mo層(鎳鉬合金鍍敷) (1) Ni-Mo layer (nickel-molybdenum alloy plating)

於以下條件下,利用輥對輥型之連接鍍敷線對載體進行電鍍,藉此形成3000μg/dm2之附著量之Ni-Mo層。具體之鍍敷條件記載如下。 The carrier was plated by a roll-to-roll type connection plating line under the following conditions, thereby forming a Ni-Mo layer having an adhesion amount of 3000 μg/dm 2 . The specific plating conditions are described below.

(液組成)硫酸Ni六水合物:50g/dm3、鉬酸鈉二水合物:60g/dm3、檸檬酸鈉:90g/dm3 (liquid composition) sulfuric acid Ni hexahydrate: 50 g/dm 3 , sodium molybdate dihydrate: 60 g/dm 3 , sodium citrate: 90 g/dm 3

(液溫)30℃ (liquid temperature) 30 ° C

(電流密度)1~4A/dm2 (current density) 1~4A/dm 2

(通電時間)3~25秒 (Power-on time) 3~25 seconds

<極薄銅層> <very thin copper layer>

於(1)中所形成之Ni-Mo層上形成極薄銅層。將極薄銅層之厚度設為2μm,除此以外,於與實施例7相同之條件下形成極薄銅層。 An extremely thin copper layer is formed on the Ni-Mo layer formed in (1). An extremely thin copper layer was formed under the same conditions as in Example 7 except that the thickness of the ultra-thin copper layer was set to 2 μm.

‧實施例9 ‧Example 9 <中間層> <intermediate layer>

(1)Ni層(Ni鍍敷) (1) Ni layer (Ni plating)

於與實施例7相同之條件下形成Ni層。 A Ni layer was formed under the same conditions as in Example 7.

(2)有機物層(有機物層形成處理) (2) Organic layer (organic layer formation treatment)

其次,將(1)中所形成之Ni層表面水洗及酸洗後,繼而,於下述條件下對Ni層表面淋浴並噴霧含有濃度1~30g/L之羧基苯并三唑(CBTA)之液溫40℃、pH值5之水溶液20~120秒,藉此形成有機物層。 Next, after washing and pickling the surface of the Ni layer formed in (1), the surface of the Ni layer is showered and sprayed with a carboxybenzotriazole (CBTA) having a concentration of 1 to 30 g/L under the following conditions. The aqueous solution having a liquid temperature of 40 ° C and a pH of 5 was allowed to form an organic layer for 20 to 120 seconds.

<極薄銅層> <very thin copper layer>

於(2)中所形成之有機物層上形成極薄銅層。將極薄銅層之厚度設為3μm,除此以外,於與實施例7相同之條件下形成極薄銅層。 An extremely thin copper layer is formed on the organic layer formed in (2). An extremely thin copper layer was formed under the same conditions as in Example 7 except that the thickness of the ultra-thin copper layer was changed to 3 μm.

‧實施例10 ‧Example 10 <中間層> <intermediate layer>

(1)Co-Mo層(鈷鉬合金鍍敷) (1) Co-Mo layer (cobalt-molybdenum alloy plating)

於以下條件下,利用輥對輥型之連接鍍敷線對載體進行電鍍,藉此形成4000μg/dm2之附著量之Co-Mo層。具體之鍍敷條件記載如下。 The carrier was plated by a roll-to-roll type connection plating line under the following conditions, thereby forming a Co-Mo layer having an adhesion amount of 4000 μg/dm 2 . The specific plating conditions are described below.

(液組成)硫酸Co:50g/dm3、鉬酸鈉二水合物:60g/dm3、檸檬酸鈉:90g/dm3 (liquid composition) sulfuric acid Co: 50 g/dm 3 , sodium molybdate dihydrate: 60 g/dm 3 , sodium citrate: 90 g/dm 3

(液溫)30℃ (liquid temperature) 30 ° C

(電流密度)1~4A/dm2 (current density) 1~4A/dm 2

(通電時間)3~25秒 (Power-on time) 3~25 seconds

<極薄銅層> <very thin copper layer>

於(1)中所形成之Co-Mo層上形成極薄銅層。將極薄銅層之厚度設為5μm,除此以外,於與實施例7相同之條件下形成極薄銅層。 An extremely thin copper layer is formed on the Co-Mo layer formed in (1). An extremely thin copper layer was formed under the same conditions as in Example 7 except that the thickness of the ultra-thin copper layer was set to 5 μm.

(實施例1~15) (Examples 1 to 15)

於下述所示之條件範圍,於壓延銅箔(實施例1~6、11~15)或附載體銅箔之極薄銅層表面(實施例7~10)形成一次粒子層(Cu)、二次粒子層(銅-鈷-鎳合金鍍敷)。 Forming a primary particle layer (Cu) on the surface of the ultra-thin copper layer (Examples 7 to 10) of the rolled copper foil (Examples 1 to 6, 11 to 15) or the copper foil with a carrier, in the range of conditions shown below, Secondary particle layer (copper-cobalt-nickel alloy plating).

所使用之浴組成及鍍敷條件係如下所述。 The bath composition and plating conditions used are as follows.

[浴組成及鍍敷條件] [Bath composition and plating conditions]

(A)一次粒子層之形成(Cu鍍敷) (A) Formation of primary particle layer (Cu plating)

液組成:銅15g/L、硫酸75g/L Liquid composition: copper 15g / L, sulfuric acid 75g / L

液溫:25~30℃ Liquid temperature: 25~30°C

電流密度:1~70A/dm2 Current density: 1~70A/dm 2

庫侖量:2~90As/dm2 Coulomb amount: 2~90As/dm 2

(B)二次粒子層之形成(Cu-Co-Ni合金鍍敷) (B) Formation of secondary particle layer (Cu-Co-Ni alloy plating)

液組成:銅15g/L、鎳8g/L、鈷8g/L Liquid composition: copper 15g / L, nickel 8g / L, cobalt 8g / L

pH值:2 pH: 2

液溫:40℃ Liquid temperature: 40 ° C

電流密度:10~50A/dm2 Current density: 10~50A/dm 2

庫侖量:10~80As/dm2 Coulomb amount: 10~80As/dm 2

調整上述一次粒子層之形成(Cu鍍敷)及二次粒子層之形成(Cu-Co-Ni合金鍍敷)之條件,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1500以上。表面積之測量係使用利用上述雷射顯微鏡之測量法。 The conditions of the formation of the primary particle layer (Cu plating) and the formation of the secondary particle layer (Cu-Co-Ni alloy plating) were adjusted, and the average height of the unevenness of the roughened surface obtained by the laser microscope was 1,500. the above. The measurement of the surface area uses a measurement using the above-described laser microscope.

(比較例1~5) (Comparative examples 1 to 5)

於比較例中,所使用之浴組成及鍍敷條件係如下所述。 In the comparative examples, the bath composition and plating conditions used were as follows.

[浴組成及鍍敷條件] [Bath composition and plating conditions]

(A)一次粒子層之形成(銅鍍敷) (A) Formation of primary particle layer (copper plating)

液組成:銅15g/L、硫酸75g/L Liquid composition: copper 15g / L, sulfuric acid 75g / L

液溫:25~35℃ Liquid temperature: 25~35°C

電流密度:1~70A/dm2 Current density: 1~70A/dm 2

庫侖量:2~90As/dm2 Coulomb amount: 2~90As/dm 2

(B)二次粒子層之形成(Cu-Co-Ni合金鍍敷條件) (B) Formation of secondary particle layer (Cu-Co-Ni alloy plating conditions)

液組成:銅15g/L、鎳8g/L、鈷8g/L Liquid composition: copper 15g / L, nickel 8g / L, cobalt 8g / L

pH值:2 pH: 2

液溫:40℃ Liquid temperature: 40 ° C

電流密度:20~50A/dm2 Current density: 20~50A/dm 2

庫侖量:30~80As/dm2 Coulomb amount: 30~80As/dm 2

<一次粒子層及二次粒子層以外之表面處理層> <surface treatment layer other than primary particle layer and secondary particle layer>

於形成一次粒子層及二次粒子層後,一部分之實施例及比較例係進行利用以下條件之表面處理層。 After forming the primary particle layer and the secondary particle layer, a part of the examples and comparative examples were subjected to a surface treatment layer under the following conditions.

(實施例3、4、8、9、比較例1~4) (Examples 3, 4, 8, and 9, Comparative Examples 1 to 4)

‧Co-Ni鍍敷:鈷鎳合金鍍敷 ‧Co-Ni plating: cobalt-nickel alloy plating

液組成:鎳5~20g/L、鈷1~8g/L Liquid composition: nickel 5~20g/L, cobalt 1~8g/L

pH值:2~3 pH: 2~3

液溫:40~60℃ Liquid temperature: 40~60°C

電流密度5~20A/dm2 Current density 5~20A/dm 2

庫侖量:10~20As/dm2 Coulomb amount: 10~20As/dm 2

(實施例5、10) (Examples 5 and 10)

‧Ni-Zn鍍敷:鎳鋅合金鍍敷 ‧Ni-Zn plating: nickel-zinc alloy plating

液組成:鎳2~30g/L、鋅2~30g/L Liquid composition: nickel 2~30g/L, zinc 2~30g/L

pH值3~4 pH 3~4

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

再者,實施例5及10係於Ni-Zn鍍敷後,進行電解鉻酸鹽處理以及使用二胺基矽烷之矽烷偶合處理。 Further, Examples 5 and 10 were subjected to electrolytic chromate treatment and decane coupling treatment using diamine decane after Ni-Zn plating.

(實施例6) (Example 6)

‧Ni-Cu鍍敷:鎳銅合金鍍敷 ‧Ni-Cu plating: nickel-copper alloy plating

液組成:鎳2~30g/L、銅2~30g/L Liquid composition: nickel 2~30g/L, copper 2~30g/L

pH值:3~4 pH: 3~4

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(實施例11) (Example 11)

‧Ni-Mo鍍敷:鎳鉬合金鍍敷 ‧Ni-Mo plating: nickel-molybdenum alloy plating

液組成:硫酸Ni六水合物:45~55g/dm3、鉬酸鈉二水合物:50~70g/dm3、檸檬酸鈉:80~100g/dm3 Liquid composition: Ni hexahydrate: 45~55g/dm 3 , sodium molybdate dihydrate: 50~70g/dm 3 , sodium citrate: 80~100g/dm 3

液溫:20~40℃ Liquid temperature: 20~40°C

電流密度:1~4A/dm2 Current density: 1~4A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

再者,實施例11係於Ni-Mo鍍敷後進行電解鉻酸鹽處理。 Further, Example 11 was subjected to electrolytic chromate treatment after Ni-Mo plating.

(實施例12) (Embodiment 12)

‧Ni-Sn鍍敷:鎳錫合金鍍敷 ‧Ni-Sn plating: nickel-tin alloy plating

液組成:鎳2~30g/L、錫2~30g/L Liquid composition: nickel 2~30g/L, tin 2~30g/L

pH值:1.5~4.5 pH: 1.5~4.5

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

再者,實施例12係於Ni-Sn鍍敷後,進行使用二胺基矽烷之矽烷偶合處理。 Further, in Example 12, after Ni-Sn plating, a decane coupling treatment using diamine decane was carried out.

(實施例13) (Example 13)

‧Ni-P鍍敷:鎳磷合金鍍敷 ‧Ni-P plating: nickel-phosphorus alloy plating

液組成:鎳30~70g/L、磷0.2~1.2g/L Liquid composition: nickel 30~70g/L, phosphorus 0.2~1.2g/L

pH值:1.5~2.5 pH: 1.5~2.5

液溫:30~40℃ Liquid temperature: 30~40°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

(實施例14) (Example 14)

‧Ni-W鍍敷:鎳鎢合金鍍敷 ‧Ni-W plating: nickel-tungsten alloy plating

液組成:鎳2~30g/L、W0.01~5g/L Liquid composition: nickel 2~30g/L, W0.01~5g/L

pH值:3~4 pH: 3~4

液溫:30~50℃ Liquid temperature: 30~50°C

電流密度:1~2A/dm2 Current density: 1~2A/dm 2

庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2

再者,實施例14係於Ni-W鍍敷後,進行電解鉻酸鹽處理以及使用二胺基矽烷之矽烷偶合處理。 Further, in Example 14, after Ni-W plating, electrolytic chromate treatment and decane coupling treatment using diamino decane were carried out.

(實施例15) (Example 15)

‧Ni-Cr鍍敷:鎳鉻合金鍍敷 ‧Ni-Cr plating: nickel-chromium alloy plating

使用Ni:80mass%、Cr:20mass%之組成之濺鍍靶而形成鎳鉻合金鍍層。 A nickel-chromium alloy plating layer was formed using a sputtering target having a composition of Ni: 80 mass% and Cr: 20 mass%.

靶:Ni:80mass%、Cr:20mass% Target: Ni: 80 mass%, Cr: 20 mass%

裝置:ULVAC股份有限公司製造之濺鍍裝置 Device: Sputtering device manufactured by ULVAC Co., Ltd.

輸出:DC50W Output: DC50W

氬氣壓力:0.2Pa Argon pressure: 0.2Pa

對於形成藉由上述實施例形成之銅箔上之一次粒子層(Cu鍍敷)及二次粒子層(Cu-Co-Ni合金鍍敷)之情形時的一次粒子之平均粒徑、二次粒子之平均粒徑、落粉、剝離強度、耐熱性、粗化處理面之一定區域之高度直方圖之平均值(凹凸高度)進行測量,測得之結果示於表1。此處,所測量之「粗化處理面」設為形成一次粒子層及二次粒子層側之最表面。再者,於二次粒子層上形成有Co-Ni鍍敷、Ni-Zn鍍敷、鉻酸鹽層、矽烷偶合層等之,一次粒子層及二次粒子層以外之表面處理層者係將該等層中之最表層之表面作為粗化處理面而測量(即,對形成銅箔之全部表面處理層後之存在一次粒子層及二次粒子層側之表面進行測量)。 The average particle diameter of the primary particles and the secondary particles in the case of forming the primary particle layer (Cu plating) and the secondary particle layer (Cu-Co-Ni alloy plating) on the copper foil formed by the above embodiment The average particle diameter, the falling powder, the peel strength, the heat resistance, and the average value (height height) of the height histogram of a certain region of the roughened surface were measured, and the results are shown in Table 1. Here, the measured "roughening surface" is the outermost surface on which the primary particle layer and the secondary particle layer side are formed. Further, a Co-Ni plating, a Ni-Zn plating, a chromate layer, a decane coupling layer, or the like is formed on the secondary particle layer, and a surface treatment layer other than the primary particle layer and the secondary particle layer is formed. The surface of the outermost layer of the layers was measured as a roughened surface (i.e., the surface of the primary particle layer and the secondary particle layer side after the entire surface treatment layer of the copper foil was formed).

粗化處理面之一次粒子及二次粒子之平均粒徑係使用日立高新技術股份有限公司製造之S4700(掃描型電子顯微鏡)以30000倍之倍率進行粒子觀察及照片拍攝,基於所獲得之照片分別對各一次粒子及二次粒子測量粒徑。然後,將該所獲得之各一次粒子及二次粒子之粒徑之算術平均值設為一次粒子之平均粒徑及二次粒子之平均粒徑之值。再者,於在掃描型電子顯微鏡照片之粒子之上畫直線之情形時,將橫切粒子之直線長度為最長部分之粒子長度設為該粒子之粒徑。再者,測量視野之大小係設為每1視野面積13.44μm2(=4.2μm×3.2μm),對1視野進行測量。再者,於利用掃描型電子顯微鏡照片進行觀察時,將可見重疊且存在於銅箔側(下方)之粒子、及未重疊之粒子判定為一次粒子,將可見重疊且存在於其他粒子之上之粒子判定為二次粒子。 The average particle diameter of the primary particles and the secondary particles on the roughened surface was observed by a S4700 (scanning electron microscope) manufactured by Hitachi High-Technologies Co., Ltd. at a magnification of 30,000 times, and photographs were taken based on the photographs obtained. The particle diameter was measured for each of the primary particles and the secondary particles. Then, the arithmetic mean of the particle diameters of the obtained primary particles and secondary particles is defined as the average particle diameter of the primary particles and the average particle diameter of the secondary particles. Further, in the case where a straight line is drawn on the particles of the scanning electron microscope photograph, the length of the longest portion of the straight line transverse to the particle is defined as the particle diameter of the particle. Further, the size of the measurement field of view was set to 13.44 μm 2 (=4.2 μm × 3.2 μm) per one field of view, and one field of view was measured. In addition, when observed by a scanning electron microscope photograph, particles which are superimposed on the side of the copper foil (below) and particles which are not overlapped are judged as primary particles, and are superposed and existed on other particles. The particles are determined to be secondary particles.

利用雷射顯微鏡獲得之粗化處理面之高度直方圖之平均值 (凹凸高度)之測量法係使用基恩斯股份有限公司製造之雷射顯微鏡VK8500,將倍率設定為1000倍,於雷射顯微鏡之台(stage)裝載作為測量對象之銅箔後,以聚焦手柄調整該台之位置,使雷射顯微鏡之透鏡之焦點與銅箔之粗化處理面對準後,進行以下之「DISTANCE‧PITCH之設定」,其後對銅箔之粗化處理面進行測量。 Average of the height histogram of the roughened surface obtained with a laser microscope (Bump height) The measurement method is a laser microscope VK8500 manufactured by Keyence Co., Ltd., and the magnification is set to 1000 times. After the copper foil as a measurement object is loaded on the stage of the laser microscope, the focus is adjusted by the focus handle. At the position of the stage, after the focus of the lens of the laser microscope is aligned with the roughened surface of the copper foil, the following "DISTANCE ‧ PITCH setting" is performed, and then the roughened surface of the copper foil is measured.

「DISTANCE‧PITCH之設定」係基於VK-8500用戶手冊4-3頁中之記載而進行。PITCH係設定為0.1μm。再者,作為參考,將該VK-8500用戶手冊4-3頁之「DISTANCE‧PITCH之設定」中揭示之操作畫面之例示於圖10。 "DISTANCE‧PITCH Settings" is based on the description in page 4-3 of the VK-8500 User's Manual. The PITCH system was set to 0.1 μm. Further, for reference, an example of an operation screen disclosed in "Setting of DISTANCE ‧ PITCH" on page 4-3 of the VK-8500 User's Manual is shown in FIG.

又,VK-8500用戶手冊4-3頁之「點選1[▲](透鏡位置移動)按鈕而使透鏡向上移動至圖像之焦點不對準之位置」之「圖像之焦點不對準之位置」設為自可見圖像之透鏡之高度點選[▲](透鏡位置移動)按鈕,使透鏡之高度緩慢地升高,使該透鏡自對象(粗化處理面)遠離,從而使粗化處理面之圖像可見明顯模糊的位置。 Also, the VK-8500 User's Manual, page 4-3, "Click the 1[▲] (Lens Position Move) button to move the lens up to the position where the focus of the image is out of alignment" ”Set the [▲] (lens position movement) button from the height of the lens of the visible image to increase the height of the lens slowly, so that the lens is away from the object (roughening surface), so that the roughening process The image of the face shows a clearly blurred position.

又,VK-8500用戶手冊4-3頁之「點選3[▼](透鏡位置移動)按鈕而使透鏡向下移動至圖像之焦點不對準位置」之「圖像之焦點不對準之位置」設為自可見圖像之透鏡之高度點選[▼](透鏡位置移動)按鈕,使透鏡之高度緩慢地降低,使透鏡接近於粗化處理面,從而使粗化處理面之圖像可見明顯模糊之位置。再者,上述「DISTANCE‧PITCH之設定」及雷射顯微鏡之台之位置之調整於各實施例、比較例中分別進行。 Also, the VK-8500 User's Manual, page 4-3, "Click the 3[▼] (Lens Position Move) button to move the lens down to the focus misalignment position of the image" Set the height of the lens from the visible image to select the [▼] (lens position shift) button, so that the height of the lens is slowly lowered, so that the lens is close to the roughened surface, so that the image of the roughened surface is visible. Obviously blurred position. In addition, the adjustment of the position of the "DISTANCE ‧ PITCH" and the position of the stage of the laser microscope was performed in each of the examples and the comparative examples.

並且,所獲得之結果係藉由有效面積為786432μm2(測量區域100%)之測量解析,使用解析軟體KVH1A9將凹凸高度直方圖化,而求出其平均 值。具體而言,顯示「直方圖詳情(濃淡特徵)」之畫面,選擇「高度」作為「顯示資料」,選擇「直方圖」作為「顯示形式」,讀取「濃度測量」之表之「項目:平均」之值,將該讀取之值之小數點以下四捨五入,將所得值設為「利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值」。再者,上述解析軟體KVH1A9係使用基恩斯股份有限公司製造之雷射顯微鏡VK8500所配置者。 Further, the obtained results were analyzed by measurement of an effective area of 786432 μm 2 (measurement area 100%), and the height of the concavity and convexity was histograms using the analytical software KVH1A9, and the average value was obtained. Specifically, the screen of "Histogram Detail (Shade Feature)" is displayed, "Height" is selected as "Display Data", "Histogram" is selected as "Display Form", and "Item of Concentration Measurement" is read. The value of the average value is rounded off to the decimal point of the read value, and the obtained value is set to "the average value of the unevenness height of the roughened surface obtained by the laser microscope". Further, the analysis software KVH1A9 was arranged using a laser microscope VK8500 manufactured by Keynes Co., Ltd.

落粉特性係藉由於銅箔之粗化處理面上貼附透明之隱形膠帶,剝離該膠帶時附著於膠帶黏著面之脫落粗化粒子而膠帶變色,根據該情況,對落粉特性進行評價。即,於膠帶無變色或極少之情形時係設為落粉良好(OK),於膠帶變色成灰色之情形時係設為落粉不良(NG)。常態剝離強度係以熱壓貼合銅箔粗化處理面與FR4樹脂基板而製作覆銅積層板,使用通常之氯化銅電路蝕刻液製作10mm電路,將10mm電路銅箔自基板剝離,一面於90°方向拉伸一面測量常態剝離強度。 In the powder falling property, a transparent invisible tape was attached to the roughened surface of the copper foil, and when the tape was peeled off, the peeled coarse particles adhered to the adhesive surface of the tape and the tape was discolored, and according to this, the powder falling characteristics were evaluated. That is, in the case where the tape is not discolored or extremely small, it is set to be good in powdering (OK), and when the tape is discolored to gray, it is set as a powder falling defect (NG). The normal peel strength is to form a copper-clad laminate by hot-pressing a copper foil roughened surface and an FR4 resin substrate, and a 10 mm circuit is formed using a normal copper chloride circuit etching solution, and a 10 mm copper foil is peeled off from the substrate. The normal peel strength was measured while stretching in the 90° direction.

(傳輸損耗之測量) (Measurement of transmission loss)

對18μm厚之各樣品貼合表1記載之樹脂基板(LCP:液晶聚合物樹脂(Kuraray股份有限公司製造之Vecstar CTZ-50μm)、聚醯亞胺:Kaneka製造之厚度50μm、氟樹脂厚度50μm:Dupont製造)後,利用蝕刻以特性阻抗成為50Ω之方式形成微帶線路,使用HP公司製造之網路分析儀HP8720C測量穿透係數,求出於頻率20GHz及頻率40GHz之傳輸損耗。再者,實施例7~10係於將附載體銅箔之極薄銅層側之表面與表1中記載之樹脂基板貼合後,剝離載體,其後進行銅鍍敷,將極薄銅層與銅鍍敷之合計厚度設為18μm後,進行與上述相同之傳輸損耗之測量。作為於頻率20GHz 之傳輸損耗之評價,將未達3.7dB/10cm設為◎,將3.7dB/10cm以上且未達4.1dB/10cm設為○,將4.1dB/10cm以上且未達5.0dB/10cm設為△,將5.0dB/10cm以上設為×。 The resin substrate described in Table 1 (LCP: liquid crystal polymer resin (Vecstar CTZ-50 μm manufactured by Kuraray Co., Ltd.), polyimine: Kaneka thickness 50 μm, and fluororesin thickness 50 μm were bonded to each sample having a thickness of 18 μm: After the manufacture of Dupont, the microstrip line was formed by etching with a characteristic impedance of 50 Ω, and the transmission coefficient was measured using a network analyzer HP8720C manufactured by HP, and the transmission loss at a frequency of 20 GHz and a frequency of 40 GHz was obtained. Further, in Examples 7 to 10, the surface of the ultra-thin copper layer side of the copper foil with a carrier was bonded to the resin substrate described in Table 1, and then the carrier was peeled off, followed by copper plating to form an extremely thin copper layer. After the total thickness of the copper plating was set to 18 μm, the measurement of the same transmission loss as described above was performed. As the frequency is 20GHz The evaluation of the transmission loss is set to ◎ of 3.7 dB/10 cm, 3.7 dB/10 cm or more and less than 4.1 dB/10 cm, and 4.1 dB/10 cm or less and less than 5.0 dB/10 cm. , set 5.0dB/10cm or more to ×.

又,作為比較例,將相同之結果示於表1。 Further, as a comparative example, the same results are shown in Table 1.

再者,表1之一次粒子電流條件欄中記載有2個電流條件、庫侖量之例係意指於左側記載之條件下進行鍍敷後,於右側記載之條件下進一步進行鍍敷。例如,於實施例1之一次粒子電流條件欄中記載為「(65A/dm2、80As/dm2)+(20A/dm2、30As/dm2)」時,其係表示將形成一次粒子之電流密度設為65A/dm2、將庫侖量設為80As/dm2而進行鍍敷後,進而將形成一次粒子之電流密度設為20A/dm2、將庫侖量設為30As/dm2而進行鍍敷。 In addition, in the primary particle current condition table of Table 1, the description of the two current conditions and the Coulomb amount means that the plating is performed under the conditions described on the left side, and further, the plating is performed under the conditions described on the right side. For example, when the column of primary particle current conditions in the first embodiment is described as "(65A/dm 2 , 80As/dm 2 ) + (20A/dm 2 , 30As/dm 2 )", it means that primary particles will be formed. after the current density was 65A / dm 2, the coulomb amount to 80As / dm 2 and plating, thus forming primary particles of the current density is set to 20A / dm 2, the coulomb amount to 30As / dm 2 and for Plating.

根據表1可揭明本發明之實施例之結果係如下所述。 According to Table 1, the results of the examples of the present invention are as follows.

實施例1係如下情況:將形成一次粒子之電流密度設為65A/dm2與20A/dm2,將庫侖量設為80As/dm2與30As/dm2,並將形成二次粒子之電流密度設為28A/dm2,將庫侖量設為20As/dm2Example 1 based the following: the formation of the primary particles of the current density is set to 65A / dm 2 to 20A / dm 2, the coulomb amount to 80As / dm 2 and 30As / dm 2, the current density and the formation of secondary particles Set to 28 A/dm 2 and set the coulomb amount to 20 As/dm 2 .

再者,形成一次粒子之電流密度與庫侖量成為2階段,於通常形成一次粒子之情形時,必需2階段之電鍍。即,係第1階段之核粒子形成之鍍敷條件與第2階段之核粒子之成長之電鍍。 Further, the current density and the coulomb amount of the primary particles are formed into two stages, and in the case where the primary particles are usually formed, two-stage plating is necessary. That is, the plating conditions for the formation of the core particles in the first stage and the growth of the core particles in the second stage are performed.

最初之鍍敷條件係用於第1階段之核形成粒子形成之電鍍條件,下一鍍敷條件係用於第2階段之核粒子之成長之電鍍條件。以下實施例及比較例亦同樣,因此省略說明。 The initial plating conditions are the plating conditions for the formation of the core-forming particles in the first stage, and the next plating conditions are the plating conditions for the growth of the core particles in the second stage. The following examples and comparative examples are also the same, and thus the description thereof is omitted.

其結果,一次粒子之平均粒徑為0.45μm,二次粒子之平均粒徑為0.30μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為2689,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.45 μm, the average particle diameter of the secondary particles was 0.30 μm, and the average value of the unevenness height of the roughened surface obtained by the laser microscope was 2,689, which satisfied the conditions of the present invention.

其結果,具備如下特徵:落粉少,常態剝離強度為較高之1.16kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將該差設為劣化率)為較小之30%以下。 As a result, the powder has a small amount of falling powder, and the normal peel strength is 1.16 kg/cm, and the heat resistance deterioration rate (after the normal peeling measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set. The rate of deterioration is less than 30%.

再者,耐熱劣化率係利用以下之式求出。 In addition, the heat deterioration rate is obtained by the following formula.

耐熱劣化率(%)=(常態剝離強度(kg/cm)-於180℃加熱48小時後之剝離強度(kg/cm))/常態剝離強度(kg/cm)×100 Heat deterioration rate (%) = (normal peel strength (kg/cm) - peel strength (kg/cm) after heating at 180 ° C for 48 hours) / normal peel strength (kg / cm) × 100

實施例2係如下情況:將形成一次粒子之電流密度設為65A/dm2與2A/dm2,將庫侖量設為80As/dm2與4As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為15As/dm2Example 2 based the following: the current density of the primary particles forming the set to 65A / dm 2 and 2A / dm 2, the coulomb amount to 80As / dm 2 and 4As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 15 As/dm 2 .

其結果,一次粒子之平均粒徑為0.40μm,二次粒子之平均粒徑為0.15μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1556,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.40 μm, the average particle diameter of the secondary particles was 0.15 μm, and the average value of the unevenness height of the roughened surface obtained by the laser microscope was 1,556, which satisfied the conditions of the present invention.

其結果,具備如下特徵:無落粉,常態剝離強度為較高之1.08kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, it has the following characteristics: no powder falling, normal peel strength is 1.08 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set. The rate of deterioration is less than 30%.

實施例3係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 3 is a case where the current density of the primary particles is set to 60 A/dm 2 and 10 A/dm 2 , the coulomb amount is set to 80 As/dm 2 and 20 As/dm 2 , and the current density of the secondary particles is formed. Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1809,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the unevenness height obtained by the laser microscope on the roughened surface was 1809, which satisfied the conditions of the present invention.

具備如下特徵:無落粉;常態剝離強度為較高之0.92kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder; normal peel strength is 0.92 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set to The deterioration rate is 30% or less.

實施例4係如下情況:將形成一次粒子之電流密度設為55A/dm2與1A/dm2,將庫侖量設為75As/dm2與5As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 4 based the following: the formation of the primary particles of the current density is set to 55A / dm 2 and 1A / dm 2, the coulomb amount to 75As / dm 2 and 5As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1862,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface obtained by the laser microscope was 1862, which satisfied the conditions of the present invention.

具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性 劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 Has the following characteristics: no falling powder, normal peel strength is higher 0.94kg / cm, heat resistance The deterioration rate (after the normal peel measurement, the peel strength after heating at 180 ° C for 48 hours, and the difference is the deterioration rate) was 30% or less.

實施例5係如下情況:將形成一次粒子之電流密度設為50A/dm2與5A/dm2,將庫侖量設為70As/dm2與10As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 5 based the following: the current density of the primary particles forming the set to 50A / dm 2 and 5A / dm 2, the coulomb amount to 70As / dm 2 and 10As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1857,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface obtained by the laser microscope was 1857, which satisfied the conditions of the present invention. It has the following characteristics: no powder drop, normal peel strength is 0.94 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as the deterioration rate. ) is less than 30%.

實施例6係如下情況:將形成一次粒子之電流密度設為60A/dm2與15A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子(二次粒子層)之電流密度設為20A/dm2,將庫侖量設為60As/dm2而進行被覆鍍敷(正常鍍敷)後,進而將電流密度設為20A/dm2,將庫侖量設為20As/dm2而形成粒子。 Example 6 is a case where the current density of forming primary particles is set to 60 A/dm 2 and 15 A/dm 2 , the coulomb amount is set to 80 As/dm 2 and 20 As/dm 2 , and secondary particles are formed (secondary The current density of the particle layer is 20 A/dm 2 , and the coulomb amount is 60 As/dm 2 , and after coating plating (normal plating), the current density is 20 A/dm 2 , and the coulomb amount is set to 20As/dm 2 forms particles.

其結果,一次粒子之平均粒徑為0.35μm,二次粒子成為被覆(正常)鍍敷狀態(粒徑未達0.1μm)及平均粒徑0.15μm之2階段構成,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1752,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.83kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.35 μm, and the secondary particles were formed in a two-stage coating (normal) plating state (particle diameter of less than 0.1 μm) and an average particle diameter of 0.15 μm, and the coarse particles were obtained by a laser microscope. The average height of the unevenness of the treated surface was 1752, which satisfied the conditions of the invention of the present invention. It has the following characteristics: no falling powder, normal peel strength is 0.83 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as the deterioration rate. ) is less than 30%.

實施例7係如下情況:將形成一次粒子之電流密度設為65A /dm2與2A/dm2,將庫侖量設為80As/dm2與4As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為15As/dm2Example 7 Series following: the formation of the primary particles of the current density is set to 65A / dm 2 and 2A / dm 2, the coulomb amount to 80As / dm 2 and 4As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 15 As/dm 2 .

其結果,一次粒子之平均粒徑為0.41μm,二次粒子之平均粒徑為0.16μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1560,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.41 μm, the average particle diameter of the secondary particles was 0.16 μm, and the average value of the unevenness height of the roughened surface obtained by the laser microscope was 1,560, which satisfied the conditions of the present invention.

其結果,具備如下特徵:無落粉,常態剝離強度為較高之1.09kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, it has the following characteristics: no falling powder, normal peel strength is 1.09 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set. The rate of deterioration is less than 30%.

實施例8係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 8 is a case where the current density of the primary particles is set to 60 A/dm 2 and 10 A/dm 2 , the Coulomb amount is set to 80 As/dm 2 and 20 As/dm 2 , and the current density of the secondary particles is formed. Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.31μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1814,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.31 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the unevenness height obtained by the laser microscope on the roughened surface was 1814, which satisfied the conditions of the present invention.

具備如下特徵:無落粉;常態剝離強度為較高之0.93kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder; normal peel strength is 0.93kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 °C for 48 hours is measured, and the difference is set to The deterioration rate is 30% or less.

實施例9係如下情況:將形成一次粒子之電流密度設為55A/dm2與1A/dm2,將庫侖量設為75As/dm2與5As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 9 based the following: the formation of the primary particles of the current density is set to 55A / dm 2 and 1A / dm 2, the coulomb amount to 75As / dm 2 and 5As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.26μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1866,滿足 本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.26 μm, and the average height of the roughened surface obtained by the laser microscope was 1866, which satisfied The conditions of the invention of the present invention.

具備如下特徵:無落粉,常態剝離強度為較高之0.95kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no falling powder, normal peel strength is 0.95 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as the deterioration rate. ) is less than 30%.

實施例10係如下情況:將形成一次粒子之電流密度設為50A/dm2與5A/dm2,將庫侖量設為70As/dm2與10As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 10 lines the following: the current density of the primary particles forming the set to 50A / dm 2 and 5A / dm 2, the coulomb amount to 70As / dm 2 and 10As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1858,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface obtained by the laser microscope was 1858, which satisfied the conditions of the present invention. It has the following characteristics: no powder drop, normal peel strength is 0.94 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as the deterioration rate. ) is less than 30%.

實施例11係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 11 is a case where the current density of the primary particles is set to 60 A/dm 2 and 10 A/dm 2 , the Coulomb amount is set to 80 As/dm 2 and 20 As/dm 2 , and the current density of the secondary particles is formed. Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1808,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the unevenness height obtained by the laser microscope on the roughened surface was 1808, which satisfied the conditions of the present invention.

具備如下特徵:無落粉;常態剝離強度為較高之0.93kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder; normal peel strength is 0.93kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 °C for 48 hours is measured, and the difference is set to The deterioration rate is 30% or less.

實施例12係如下情況:將形成一次粒子之電流密度設為55A /dm2與1A/dm2,將庫侖量設為75As/dm2與5As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 12 lines the following: the current density of the primary particles forming the set to 55A / dm 2 and 1A / dm 2, the coulomb amount to 75As / dm 2 and 5As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1861,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface obtained by the laser microscope was 1861, which satisfied the conditions of the present invention.

具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder drop, normal peel strength is 0.94 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as the deterioration rate. ) is less than 30%.

實施例13係如下情況:將形成一次粒子之電流密度設為50A/dm2與5A/dm2,將庫侖量設為70As/dm2與10As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 13 lines the following: the current density of the primary particles forming the set to 50A / dm 2 and 5A / dm 2, the coulomb amount to 70As / dm 2 and 10As / dm 2, the current density and the formation of secondary particles Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1858,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.94kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average height of the roughened surface obtained by the laser microscope was 1858, which satisfied the conditions of the present invention. It has the following characteristics: no powder drop, normal peel strength is 0.94 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as the deterioration rate. ) is less than 30%.

實施例14係如下情況:將形成一次粒子之電流密度設為60A/dm2與15A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子(二次粒子層)之電流密度設為20A/dm2,將庫侖量設為60As/dm2而進行被覆鍍敷(正常鍍敷)後,進而將電流密度設為20A/dm2,將庫侖量設為20As/dm2而形成粒子。 Example 14 is a case where the current density of forming primary particles is set to 60 A/dm 2 and 15 A/dm 2 , the coulomb amount is set to 80 As/dm 2 and 20 As/dm 2 , and secondary particles are formed (secondary The current density of the particle layer is 20 A/dm 2 , and the coulomb amount is 60 As/dm 2 , and after coating plating (normal plating), the current density is 20 A/dm 2 , and the coulomb amount is set to 20As/dm 2 forms particles.

其結果,一次粒子之平均粒徑為0.35μm,二次粒子成為被覆(正常) 鍍敷狀態(粒徑未達0.1μm)及平均粒徑0.15μm之2階段構成,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1751,滿足本案發明之條件。具備如下特徵:無落粉,常態剝離強度為較高之0.84kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 As a result, the average particle diameter of the primary particles was 0.35 μm, and the secondary particles became coated (normal). In the plating state (the particle diameter was less than 0.1 μm) and the average particle diameter of 0.15 μm, the average value of the unevenness height of the roughened surface obtained by the laser microscope was 1,751, which satisfied the conditions of the present invention. It has the following characteristics: no falling powder, normal peel strength is 0.84 kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 ° C for 48 hours is measured, and the difference is set as the deterioration rate. ) is less than 30%.

實施例15係如下情況:將形成一次粒子之電流密度設為60A/dm2與10A/dm2,將庫侖量設為80As/dm2與20As/dm2,並將形成二次粒子之電流密度設為25A/dm2,將庫侖量設為30As/dm2Example 15 is a case where the current density of the primary particles is set to 60 A/dm 2 and 10 A/dm 2 , the Coulomb amount is set to 80 As/dm 2 and 20 As/dm 2 , and the current density of the secondary particles is formed. Set to 25 A/dm 2 and set the coulomb amount to 30 As/dm 2 .

其結果,一次粒子之平均粒徑為0.30μm,二次粒子之平均粒徑為0.25μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為1805,滿足本案發明之條件。 As a result, the average particle diameter of the primary particles was 0.30 μm, the average particle diameter of the secondary particles was 0.25 μm, and the average value of the unevenness height obtained by the laser microscope on the roughened surface was 1805, which satisfied the conditions of the present invention.

具備如下特徵:無落粉;常態剝離強度為較高之0.93kg/cm,又,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下。 It has the following characteristics: no powder; normal peel strength is 0.93kg/cm, and heat resistance deterioration rate (after normal peel measurement, the peel strength after heating at 180 °C for 48 hours is measured, and the difference is set to The deterioration rate is 30% or less.

相對於此,比較例係如下結果。 On the other hand, the comparative example is as follows.

比較例1係如下情況:將形成一次粒子之電流密度設為63A/dm2與10A/dm2,將庫侖量設為80As/dm2與30As/dm2,並無形成二次粒子。其結果,一次粒子之平均粒徑為0.50μm,粗化處理面之利用雷射顯微鏡獲得之凹凸高度的平均值為2001,滿足本案發明之條件。無落粉,常態剝離強度為較高之1.38kg/cm,為實施例等級。然而,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將該差設為劣化率)為60%,明顯較差。作為整體高頻電路用銅箔之評價不良。 In Comparative Example 1, the current density of the primary particles was set to 63 A/dm 2 and 10 A/dm 2 , and the Coulomb amount was set to 80 As/dm 2 and 30 As/dm 2 , and secondary particles were not formed. As a result, the average particle diameter of the primary particles was 0.50 μm, and the average value of the unevenness height obtained by the laser microscope on the roughened surface was 2001, which satisfied the conditions of the present invention. In the absence of powder, the normal peel strength was 1.38 kg/cm, which is the grade of the example. However, the heat deterioration rate (the peel strength after the normal peeling measurement was measured at 180 ° C for 48 hours, and the difference was the deterioration rate) was 60%, which was remarkably inferior. The evaluation of the copper foil for the entire high-frequency circuit was poor.

比較例2表示不存在一次粒徑而僅為二次粒子層之習知例。即,係將形成二次粒子之電流密度設為50A/dm2,將庫侖量設為30As/dm2之情況。 Comparative Example 2 shows a conventional example in which only the primary particle diameter is present and only the secondary particle layer is present. That is, the current density of the secondary particles was set to 50 A/dm 2 and the coulomb amount was set to 30 As/dm 2 .

其結果,二次粒子之平均粒徑為0.30μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為294,未滿足本發明之條件。 As a result, the average particle diameter of the secondary particles was 0.30 μm, and the average height of the roughened surface obtained by the laser microscope was 294, which did not satisfy the conditions of the present invention.

粗化粒子之產生大量落粉。常態剝離強度為較高之1.25kg/cm、耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下,為實施例等級。如上所述,存在產生大量落粉之問題,因此作為整體高頻電路用銅箔之綜合評價不良。 The coarsened particles produce a large amount of falling powder. The normal peel strength is 1.25 kg/cm, and the heat resistance deterioration rate (after the normal peel measurement is measured, the peel strength after heating at 180 ° C for 48 hours, and the difference is the deterioration rate) is 30% or less. , for the example level. As described above, there is a problem that a large amount of falling powder is generated, and thus the overall evaluation of the copper foil for the high-frequency circuit is poor.

比較例3係如下情況:將形成一次粒子之電流密度設為63A/dm2與1A/dm2,將庫侖量設為80As/dm2與2As/dm2,並將形成二次粒子之電流密度設為28A/dm2,將庫侖量設為73As/dm2Comparative Example 3 is a case where the current density of the primary particles is set to 63 A/dm 2 and 1 A/dm 2 , the coulomb amount is set to 80 As/dm 2 and 2 As/dm 2 , and the current density of the secondary particles is formed. Set to 28 A/dm 2 and set the coulomb amount to 73 As/dm 2 .

其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為0.60μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1298,未滿足本發明之條件。產生大量落粉。常態剝離強度為較高之1.42kg/cm、耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下,為實施例等級,但產生大量落粉。作為整體高頻電路用銅箔之評價不良。 As a result, the average particle diameter of the primary particles was 0.35 μm, the average particle diameter of the secondary particles was 0.60 μm, and the average value of the unevenness height of the roughened surface obtained by the laser microscope was 1298, which did not satisfy the conditions of the present invention. Produce a lot of falling powder. The normal peel strength is 1.42 kg/cm, and the heat resistance deterioration rate (after the normal peel measurement is measured, the peel strength after heating at 180 ° C for 48 hours, and the difference is the deterioration rate) is 30% or less. , for the example grade, but produced a lot of falling powder. The evaluation of the copper foil for the entire high-frequency circuit was poor.

比較例4係如下情況:將形成一次粒子之電流密度設為63A/dn2與1A/dm2,將庫侖量設為80As/dm2與2As/dm2,並將形成二次粒子之電流密度設為31A/dm2,將庫侖量設為40As/dm2Comparative Example 4 is a case where the current density of the primary particles is set to 63 A/dn 2 and 1 A/dm 2 , the coulomb amount is set to 80 As/dm 2 and 2 As/dm 2 , and the current density of the secondary particles is formed. Set to 31 A/dm 2 and set the coulomb amount to 40 As/dm 2 .

其結果,一次粒子之平均粒徑為0.35μm,二次粒子之平均粒徑為 0.40μm,粗化處理面之利用雷射顯微鏡獲得之高度之平均值為1227,未滿足本發明之條件。 As a result, the average particle diameter of the primary particles is 0.35 μm, and the average particle diameter of the secondary particles is 0.40 μm, the average height of the roughened surface obtained by the laser microscope was 1227, which did not satisfy the conditions of the present invention.

常態剝離強度為較高之1.37kg/cm、耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為較小之30%以下,為實施例等級,但產生大量落粉。作為整體高頻電路用銅箔之評價不良。 The normal peel strength is 1.37 kg/cm, and the heat resistance deterioration rate (after the normal peel measurement is measured, the peel strength after heating at 180 ° C for 48 hours, and the difference is the deterioration rate) is 30% or less. , for the example grade, but produced a lot of falling powder. The evaluation of the copper foil for the entire high-frequency circuit was poor.

比較例5係如下情況:將形成一次粒子之電流密度設為40A/dm2與1A/dm2,將庫侖量設為40As/dm2與2As/dm2,並將形成二次粒子之電流密度設為20A/dm2,將庫侖量設為20As/dm2Comparative Example 5 is a case where the current density of the primary particles is set to 40 A/dm 2 and 1 A/dm 2 , the Coulomb amount is set to 40 As/dm 2 and 2 As/dm 2 , and the current density of the secondary particles is formed. Set to 20 A/dm 2 and set the coulomb amount to 20 As/dm 2 .

其結果,一次粒子之平均粒徑為0.15μm,二次粒子之平均粒徑為0.15μm,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1367,未滿足本發明之條件。落粉未產生。又,常態剝離強度為0.71kg/cm,耐熱性劣化率(於常態剝離測量後,測量於180℃加熱48小時後之剝離強度,將其差設為劣化率)為35%。 As a result, the average particle diameter of the primary particles was 0.15 μm, the average particle diameter of the secondary particles was 0.15 μm, and the average value of the unevenness height of the roughened surface obtained by the laser microscope was 1,367, which did not satisfy the conditions of the present invention. Falling powder did not occur. Further, the normal peel strength was 0.71 kg/cm, and the heat resistance deterioration rate (the peel strength after heating at 180 ° C for 48 hours after the normal peel measurement was measured, and the difference was the deterioration rate) was 35%.

根據上述實施例及比較例之對比可揭明,於在銅箔(原箔)之表面形成銅之一次粒子層後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金形成之二次粒子層之情形時,於粗化處理面之一定區域之利用雷射顯微鏡獲得之測量解析中,將粗化處理面之凹凸高度的平均值設為1500以上,藉此可具有能夠穩定地抑制稱為落粉之現象之優異效果,進而,提高剝離強度且提高高頻特性。 According to the comparison between the above embodiment and the comparative example, after forming a primary particle layer of copper on the surface of the copper foil (original foil), a ternary alloy composed of copper, cobalt and nickel is formed on the primary particle layer. In the case of the formation of the secondary particle layer, in the measurement analysis obtained by the laser microscope in a certain region of the roughened surface, the average value of the unevenness height of the roughened surface is 1500 or more. The excellent effect called the phenomenon of falling powder is stably suppressed, and further, the peel strength is improved and the high frequency characteristics are improved.

又,將一次粒子層之平均粒徑設為0.25~0.45μm、將由銅、鈷及鎳構成之三元系合金形成之二次粒子層的平均粒徑設為0.35μm以下可達成上 述效果,並且進而有效。 In addition, the average particle diameter of the primary particle layer is 0.25 to 0.45 μm, and the average particle diameter of the secondary particle layer formed of the ternary alloy composed of copper, cobalt, and nickel is 0.35 μm or less. The effect is described and is further effective.

再者,於耐熱處理層含有Co之情形時,有傳輸損耗變大之傾向。 Further, when the heat-resistant treatment layer contains Co, the transmission loss tends to increase.

圖9表示顯示實施例1之高度直方圖之平均值(凹凸高度)之利用解析軟體KVH1A9獲得之解析結果的電腦畫面之圖像。於圖9中,高度直方圖之平均值(凹凸高度)係讀取右上之表(濃度測量)之項目「平均」(此處表示為2688.98)所得者。 Fig. 9 is a view showing an image of a computer screen showing the analysis result obtained by the analysis software KVH1A9 of the average value (concave-convex height) of the height histogram of the first embodiment. In Fig. 9, the average value (bump height) of the height histogram is obtained by reading the item "average" (herein, 2688.98) of the upper right table (concentration measurement).

Claims (22)

一種高頻電路用銅箔,係於銅箔表面形成銅之一次粒子層之後,於該一次粒子層上形成由銅、鈷及鎳構成之三元系合金之二次粒子層而成的銅箔,利用雷射顯微鏡獲得之粗化處理面之凹凸高度的平均值為1500以上。 A copper foil for a high-frequency circuit is a copper foil formed by forming a primary particle layer of copper on a surface of a copper foil, and forming a secondary particle layer of a ternary alloy composed of copper, cobalt, and nickel on the primary particle layer. The average height of the unevenness of the roughened surface obtained by the laser microscope is 1,500 or more. 如申請專利範圍第1項之高頻電路用銅箔,其中,該銅之一次粒子層的平均粒徑為0.25~0.45μm,由銅、鈷及鎳構成之三元系合金形成之二次粒子層的平均粒徑為0.35μm以下。 The copper foil for a high-frequency circuit according to the first aspect of the invention, wherein the primary particle layer of the copper has an average particle diameter of 0.25 to 0.45 μm, and the secondary particles formed of a ternary alloy composed of copper, cobalt and nickel The average particle diameter of the layer is 0.35 μm or less. 如申請專利範圍第1項之高頻電路用銅箔,其中,該一次粒子層及二次粒子層為電鍍層。 The copper foil for high-frequency circuits according to the first aspect of the invention, wherein the primary particle layer and the secondary particle layer are electroplated layers. 如申請專利範圍第1項之高頻電路用銅箔,其中,該二次粒子為於該一次粒子上成長之1個或複數個樹枝狀粒子或於該一次粒子上成長之正常鍍層。 The copper foil for high-frequency circuits according to the first aspect of the invention, wherein the secondary particles are one or a plurality of dendritic particles grown on the primary particles or a normal plating layer grown on the primary particles. 如申請專利範圍第1項之高頻電路用銅箔,其中,利用雷射顯微鏡獲得之該粗化處理面之凹凸高度的平均值為1500以上2000以下。 The copper foil for high-frequency circuits according to claim 1, wherein an average value of the unevenness height of the roughened surface obtained by a laser microscope is 1,500 or more and 2,000 or less. 如申請專利範圍第1項之高頻電路用銅箔,其中,該一次粒子層及二次粒子層之剝離強度為0.80kg/cm以上。 The copper foil for high-frequency circuits according to the first aspect of the invention, wherein the primary particle layer and the secondary particle layer have a peeling strength of 0.80 kg/cm or more. 如申請專利範圍第1項之高頻電路用銅箔,其中,該一次粒子層及二次粒子層之剝離強度為0.90kg/cm以上。 The copper foil for high-frequency circuits according to the first aspect of the invention, wherein the primary particle layer and the secondary particle layer have a peel strength of 0.90 kg/cm or more. 如申請專利範圍第1項之高頻電路用銅箔,其中,於該二次粒子層上形成有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、 Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者。 The copper foil for high-frequency circuit according to the first aspect of the invention, wherein the secondary particle layer is formed with: (A) Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, Al, P , W, Mn, Any one or both of an alloy layer composed of one or more elements of Sn, As, and Ti, and (B) a chromate layer. 如申請專利範圍第1項之高頻電路用銅箔,其中,於該二次粒子層上依序形成有:(A)由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層,及(B)鉻酸鹽層之任一者或兩者,及矽烷偶合層。 The copper foil for high-frequency circuit according to claim 1, wherein the secondary particle layer is sequentially formed with: (A) Ni and selected from the group consisting of Fe, Cr, Mo, Zn, Ta, Cu, and Al. Any one or both of an alloy layer composed of one or more elements of P, W, Mn, Sn, As, and Ti, and (B) a chromate layer, and a decane coupling layer. 如申請專利範圍第1項之高頻電路用銅箔,其中,於該二次粒子層上形成有Ni-Zn合金層及鉻酸鹽層之任一者或兩者。 The copper foil for high-frequency circuits according to claim 1, wherein either or both of a Ni-Zn alloy layer and a chromate layer are formed on the secondary particle layer. 如申請專利範圍第1項之高頻電路用銅箔,其中,於該二次粒子層上依序形成有:Ni-Zn合金層及鉻酸鹽層之任一者或兩者,及矽烷偶合層。 The copper foil for high-frequency circuits according to claim 1, wherein one or both of a Ni-Zn alloy layer and a chromate layer and a decane coupling are sequentially formed on the secondary particle layer. Floor. 如申請專利範圍第1項之高頻電路用銅箔,其中,於該二次粒子層之表面具備樹脂層。 A copper foil for a high-frequency circuit according to the first aspect of the invention, wherein a resin layer is provided on a surface of the secondary particle layer. 如申請專利範圍第8項之高頻電路用銅箔,其中,於該由Ni與選自由Fe、Cr、Mo、Zn、Ta、Cu、Al、P、W、Mn、Sn、As及Ti組成之群一種以上之元素構成的合金層、或該鉻酸鹽層、或該矽烷偶合層、或該Ni-Zn合金層之表面具備樹脂層。 The copper foil for high-frequency circuit of claim 8, wherein the composition consisting of Ni and Fe, Cr, Mo, Zn, Ta, Cu, Al, P, W, Mn, Sn, As, and Ti The alloy layer composed of one or more elements, or the chromate layer, or the decane coupling layer, or the surface of the Ni-Zn alloy layer is provided with a resin layer. 一種附載體銅箔,係於載體之一面或雙面依序具有中間層、極薄銅層者,該極薄銅層為申請專利範圍第1至13項中任一項之高頻電路用銅箔。 A copper foil with a carrier is a copper layer for a high-frequency circuit according to any one of claims 1 to 13 of the invention, which has an intermediate layer or an ultra-thin copper layer on one side or both sides of the carrier. Foil. 如申請專利範圍第14項之附載體銅箔,其中,於該載體之一面依序具有該中間層、該極薄銅層,於該載體之另一面具有粗化處理層。 The carrier-attached copper foil according to claim 14, wherein the intermediate layer and the ultra-thin copper layer are sequentially provided on one side of the carrier, and the roughened layer is provided on the other side of the carrier. 一種高頻電路用覆銅積層板,其使用有申請專利範圍第1至15項中任一項之銅箔。 A copper-clad laminate for a high-frequency circuit, which uses the copper foil of any one of claims 1 to 15. 一種高頻電路用印刷配線板,其使用有申請專利範圍第1至15項中任一項之銅箔。 A printed wiring board for a high-frequency circuit using the copper foil according to any one of claims 1 to 15. 如申請專利範圍第16項之高頻電路用覆銅積層板,其積層有該銅箔與聚醯亞胺、液晶聚合物或氟樹脂。 The copper-clad laminate for high-frequency circuits of claim 16 is laminated with the copper foil and polyimide, liquid crystal polymer or fluororesin. 如申請專利範圍第17項之高頻電路用印刷配線板,其使用有聚醯亞胺、液晶聚合物或氟樹脂之任一者。 A printed wiring board for a high-frequency circuit according to the seventeenth aspect of the invention is the use of any of a polyimide, a liquid crystal polymer or a fluororesin. 一種電子機器,其使用有申請專利範圍第17或19項之印刷配線板。 An electronic machine using the printed wiring board of claim 17 or 19. 一種印刷配線板之製造方法,其含有如下步驟:準備申請專利範圍第14或15項之附載體銅箔與絕緣基板;將該附載體銅箔與絕緣基板積層;及於將該附載體銅箔與絕緣基板積層後,經過將該附載體銅箔之載體剝離之步驟而形成覆銅積層板,然後,藉由半加成法、減成法、部分加成法或改良半加成法之任一種方法形成電路。 A manufacturing method of a printed wiring board, comprising the steps of: preparing a copper foil and an insulating substrate with a carrier of claim 14 or 15; laminating the copper foil with the insulating substrate; and forming a copper foil with the carrier After laminating with the insulating substrate, the copper-clad laminate is formed by the step of peeling off the carrier with the carrier copper foil, and then, by semi-additive method, subtractive method, partial addition method or modified semi-additive method One method forms a circuit. 一種印刷配線板之製造方法,其含有如下步驟:於申請專利範圍第14或15項之附載體銅箔的該極薄銅層側表面 形成電路;以埋沒該電路之方式於該附載體銅箔之該極薄銅層側表面形成樹脂層;於該樹脂層上形成電路;於該樹脂層上形成電路後,剝離該載體;及藉由在剝離該載體後去除該極薄銅層,而使形成於該極薄銅層側表面之埋沒於該樹脂層的電路露出。 A manufacturing method of a printed wiring board comprising the following steps: the side surface of the ultra-thin copper layer of the copper foil with carrier of claim 14 or 15 Forming a circuit; forming a resin layer on the side surface of the ultra-thin copper layer of the copper foil with the carrier by burying the circuit; forming a circuit on the resin layer; peeling off the carrier after forming a circuit on the resin layer; After the carrier is peeled off, the ultra-thin copper layer is removed, and the circuit buried in the resin layer on the side surface of the ultra-thin copper layer is exposed.
TW103113621A 2013-04-26 2014-04-15 Copper foil for high-frequency circuits, copper-clad laminated board for high-frequency circuits, printed wiring boards for high-frequency circuits, copper foil with carrier for high-frequency circuits, electronic equipment, and methods for manufacturing printed wiring boards TWI632054B (en)

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