TWI626517B - Shadow mask -substrate alignment method - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 220
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 103
- 238000002310 reflectometry Methods 0.000 claims 1
- 108020003175 receptors Proteins 0.000 abstract description 22
- 108091008695 photoreceptors Proteins 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 description 53
- 230000008021 deposition Effects 0.000 description 52
- 238000006073 displacement reaction Methods 0.000 description 48
- 239000000463 material Substances 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000005070 sampling Methods 0.000 description 4
- 229910001374 Invar Inorganic materials 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
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- 229920001621 AMOLED Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- Organic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Abstract
在一種陰影遮罩-基板對準方法中,光源、分束器、包括第一格柵的第一基板、包括第二格柵的第二基板、以及光接受器經彼此相對定位成可界定一光路,該光路包括由該光源輸出而第一次被該分束器反射的光線。第一次被反射的光線穿經該第一或該第二格柵以及第二次被該第二或該第一格柵至少向後部份反射各自通過該第一或該第二格柵。第二次被反射的光線至少部份穿經該分束器以便被該光接受器接收。該第一基板、該第二基板或兩者的方位被調整成可定位該第一格柵、該第二格柵或兩者直到該光接受器接收一預定數量。 In a shadow mask-substrate alignment method, a light source, a beam splitter, a first substrate including a first grating, a second substrate including a second grating, and a photoreceptor are positioned opposite each other to define a An optical path that includes light that is output by the light source and that is first reflected by the beam splitter. The first reflected light passes through the first or second grid and is secondarily reflected by the second or first grid at least rearward portions through the first or second grid. The second reflected light passes at least partially through the beam splitter for receipt by the light receptor. The orientation of the first substrate, the second substrate, or both is adjusted to position the first grid, the second grid, or both until the light receiver receives a predetermined amount.
Description
本申請案為申請於2012年10月31日之美國專利申請案第13/695,488號的部份延續申請案,其係申請於2011年5月23日之國際申請案第PCT/US2011/037501號的美國國家階段,其係主張申請於2010年6月4日之美國臨時申請案第61/351,470號的權益。以上文獻的揭示內容全部併入本文作為參考資料。 This application is a continuation-in-part application of U.S. Patent Application Serial No. 13/695,488, filed on Jan. 31, 2012, which is hereby incorporated by reference. In the US national phase, the department claimed to apply for the US Provisional Application No. 61/351,470 on June 4, 2010. The disclosures of the above documents are hereby incorporated by reference in its entirety.
發明領域 Field of invention
本發明係有關於準確地對準陰影遮罩與基板,此係與氣相沉積系統沉積材料於基板上有關。 The present invention relates to accurately aligning a shadow mask with a substrate, which is related to the vapor deposition system deposition material on the substrate.
先前技術 Prior art
氣相沉積系統準確對準陰影遮罩與基板對於一或更多材料在基板的準確沉積至關重要。可惜,大部份的氣相沉積系統,包括封閉式真空沉積容器,其中發生一或更多次氣相沉積事件以及難以人工高度準確地對準陰影遮罩至基板。此外,目前用於對準陰影遮罩至基板的自動及半自動系統沒有必要的對準準確度以在氣相沉積材料於基板上時提供想要的準確度,特別是在用多個不同的陰影遮罩使基板經受多次氣相沉積事件時。 The accurate alignment of the vapor deposition system with the shadow mask and substrate is critical for accurate deposition of one or more materials on the substrate. Unfortunately, most vapor deposition systems include closed vacuum deposition vessels in which one or more vapor deposition events occur and it is difficult to manually and accurately align the shadow mask to the substrate. In addition, current automated and semi-automated systems for aligning shadow masks to substrates do not have the necessary alignment accuracy to provide the desired accuracy when vapor deposited material onto the substrate, particularly with multiple different shadows. The mask subjects the substrate to multiple vapor deposition events.
因此,提供一種對準陰影遮罩-基板的對準方法及系 統使得一或更多材料經由一或更多陰影遮罩能以高度準確及可重複的方式氣相沉積於基板上是合乎需要的。 Therefore, an alignment method and system for aligning a shadow mask-substrate are provided It is desirable to have one or more materials vapor-deposited onto the substrate in a highly accurate and repeatable manner via one or more shadow masks.
揭示於本文的是一種陰影遮罩-基板對準方法,其係包括下列步驟:(a)使一準直光源,一分束器(beam splitter),包含一第一格柵的一基板、包含一第二格柵的一陰影遮罩,以及一光接受器彼此相對定位成可界定包含由該準直光源輸出而至少被該分束器部份反射之準直光的一光路,該至少被部份反射之準直光穿經該第一或該第二格柵中之一者以及至少被該第一或該第二格柵中之另一者部份反射回來通過該第一或該第二格柵中之該一者,以及被反射回來通過該第一或該第二格柵中之該一者的該至少部份反射光至少部份穿經該分束器以便被該光接受器接收;以及(b)使得該基板、該陰影遮罩或兩者的方位被調整成可定位該第一格柵、該第二格柵、或該第一及該第二格柵兩者直到該光接受器接收一預定數量。 Disclosed herein is a shadow mask-substrate alignment method comprising the steps of: (a) causing a collimated light source, a beam splitter, a substrate comprising a first grating, including a shadow mask of a second grid, and a light receiver positioned opposite each other to define an optical path including collimated light output by the collimated light source and at least partially reflected by the beam splitter, the at least being The partially reflected collimated light passes through one of the first or second grids and is reflected at least by the other of the first or second grids through the first or the first The one of the two grids and the at least partially reflected light reflected back through the one of the first or second grids at least partially through the beam splitter for being illuminated by the light receptor Receiving; and (b) adjusting an orientation of the substrate, the shadow mask, or both to position the first grid, the second grid, or both the first and second grids until The light receiver receives a predetermined amount.
每個格柵可包括多個隔開條桿。一間隙可分開每對隔開條桿。每個條桿與每個間隙可具有相同的寬度。 Each grid may include a plurality of spaced apart bars. A gap separates each pair of spaced apart bars. Each bar can have the same width as each gap.
每個格柵可包括多個隔開條桿以及一間隙分開每對隔開條桿。步驟(b)可包括使得該基板、該陰影遮罩或兩者的方位被調整成可使該第一格柵之該等條桿的長軸平行於該第二格柵之該等條桿的長軸以及使該第一格柵及該第二格柵的該等條桿各自與該第二格柵及該第一格柵的該等間隙部份重疊。 Each grid may include a plurality of spaced apart bars and a gap separating each pair of spaced apart bars. Step (b) may include adjusting the orientation of the substrate, the shadow mask, or both such that the long axes of the bars of the first grid are parallel to the bars of the second grid The long axis and the bars of the first grid and the second grid are each overlapped with the gaps of the second grid and the first grid.
該第一及該第二格柵的該等條桿可各自與該第二及該第一格柵的該等間隙部份重疊50%。 The bars of the first and second grids may each overlap 50% of the gaps of the second and first grids.
該準直光源可包括一LED以及可操作用以準直由該LED輸出之光線的一準直透鏡。 The collimated light source can include an LED and a collimating lens operable to collimate light output by the LED.
該光接受器可包括一PIN二極體以及可操作用以聚集接收自該分束器之光線於該PIN二極體上的一聚焦透鏡。 The light receiver can include a PIN diode and a focusing lens operable to focus light received from the beam splitter on the PIN diode.
每個條桿的一縱軸可與該對應基板或陰影遮罩的一中心軸呈±15度徑向地延伸。 A longitudinal axis of each bar may extend radially by ±15 degrees from a central axis of the corresponding substrate or shadow mask.
本文也揭示一種陰影遮罩-基板對準方法,其係包括下列步驟:(a)提供一第一基板,其係具有排列成一圖形的多個第一格柵,其中每個第一格柵包含多個隔開條桿以及在每對隔開條桿之間的一間隙;(b)提供一第二基板,其係具有排列成與該等多個第一格柵一樣之圖形的多組隔開反射面,其中每組隔開反射面包含一對隔開反射面;(c)界定多條光路,其中每條光路包含在該光路之相對兩端的一光源與一光接受器,以及在該光路中有一分束器在該光源與該光接受器之間;(d)在每條光路中安置與一組隔開反射面粗略對準的一第一格柵;以及(e)當每條光路上的光線在該光線反射及通過該分束器、被該等隔開反射面在該光路中的至少一者反射、以及兩次穿經該第一格柵在該光路中的至少一間隙之後被該光路的該光接受器接收時,精細定位(fine positioning)該第一基板、該第二基板或兩者。 Also disclosed herein is a shadow mask-substrate alignment method comprising the steps of: (a) providing a first substrate having a plurality of first gratings arranged in a pattern, wherein each first grating comprises a plurality of spaced apart bars and a gap between each pair of spaced apart bars; (b) providing a second substrate having a plurality of sets arranged in a pattern identical to the plurality of first gratings An open reflective surface, wherein each set of spaced apart reflective surfaces comprises a pair of spaced apart reflective surfaces; (c) defining a plurality of optical paths, wherein each optical path comprises a light source and a light receptor at opposite ends of the optical path, and a beam splitter between the light source and the light receptor; (d) a first grid disposed roughly aligned with a set of spaced reflective surfaces in each of the light paths; and (e) each strip Light rays on the light path are reflected by the light and reflected by the beam splitter, at least one of the spaced apart reflective surfaces in the optical path, and through at least one gap of the first grating in the optical path Finely positioning the first substrate when received by the light receiver of the optical path The second substrate or both.
每組隔開反射面可由包含多個隔開條桿以及一間隙在每對隔開條桿之間的一第二格柵構成。該第二格柵的各個條桿可界定該等反射面中之一者。該第二格柵的各個間隙可界定該第二基板中反射率小於各個反射面的一結構。 Each set of spaced apart reflective surfaces may be comprised of a second grid comprising a plurality of spaced apart bars and a gap between each pair of spaced apart bars. Each of the bars of the second grid may define one of the reflective surfaces. Each gap of the second grid may define a structure in the second substrate that has a reflectance less than each of the reflective surfaces.
各個光接受器可輸出位準與該光接受器所接收之一 光量相關的一訊號。步驟(e)可包括精細定位該第一基板、該第二基板或兩者直到由該等光接受器輸出之該等訊號的一位準組合等於一預定值或落在一預定值範圍內。該預定值可為零。 Each of the light receptors can output a level and one of the light receptors received A signal related to the amount of light. Step (e) may include finely locating the first substrate, the second substrate, or both until a quasi-combination of the signals output by the photoreceptors is equal to a predetermined value or falls within a predetermined range of values. The predetermined value can be zero.
該第一基板與該第二基板可各自具有一矩形或一方形形狀。該第一基板可具有毗鄰各個角落的一第一格柵。該第二基板可具有毗鄰各個角落的一組隔開反射面。 The first substrate and the second substrate may each have a rectangular shape or a square shape. The first substrate can have a first grid adjacent each corner. The second substrate can have a set of spaced apart reflective surfaces adjacent each corner.
本文也揭示一種陰影遮罩-基板對準方法,其係包括下列步驟:(a)提供在一圖形中有多個第一格柵的一基板;(b)提供一陰影遮罩,其係具有排列成與該等多個第一格柵一樣之圖形的多個第二格柵,其中每個格柵包含多個隔開條桿以及一間隙在每對隔開條桿之間;(c)界定多條光路,其中每條光路包括一光源、一光接受器及一分束器;(d)在每條光路中安置與一第二格柵粗略對準的一第一格柵;以及(e)當在該光路上由該光路之該光源輸出的該光線,被該光路的該分束器反射,第一次穿經該第一或該第二格柵中之一者在該光路中的至少一間隙,被該第一或該第二格柵中之另一者在該光路中的至少一條桿反射,第二次返回穿經該第一或該第二格柵中之該一者在該光路中的該至少一間隙,接著穿經該光路的該分束器以便被該光路的該光接受器接收之後,精細定位該基板、該陰影遮罩或兩者直到每條光路上有一預定數量的光線被該光路的該光接受器接收。 Also disclosed herein is a shadow mask-substrate alignment method comprising the steps of: (a) providing a substrate having a plurality of first gratings in a pattern; (b) providing a shadow mask having a plurality of second grids arranged in a pattern identical to the plurality of first grids, wherein each grid comprises a plurality of spaced apart bars and a gap between each pair of spaced apart bars; (c) Defining a plurality of optical paths, wherein each of the optical paths includes a light source, a light receiver, and a beam splitter; (d) placing a first grid roughly aligned with a second grid in each of the light paths; and e) when the light output by the light source of the optical path on the optical path is reflected by the beam splitter of the optical path, the first time passing through one of the first or second grating is in the optical path At least one gap is reflected by the other of the first or second grids in at least one of the optical paths, and the second time passes back to the one of the first or second grids The at least one gap in the optical path is then finely positioned after passing through the beam splitter of the optical path for reception by the optical receiver of the optical path The substrate, the shadow mask, or both, until a predetermined amount of light is received by the light receptor of the optical path.
每個條桿與每個間隙可具有相同的寬度。 Each bar can have the same width as each gap.
步驟(e)可包括精細定位該基板、該陰影遮罩或兩者直到該第一及該第二格柵的該等條桿各自與該第二及該第一格 柵的該等間隙部份重疊。 Step (e) may include finely positioning the substrate, the shadow mask, or both until the bars of the first and second grids are respectively associated with the second and the first grid The gaps of the grid partially overlap.
該第一及該第二格柵的該等條桿可各自與該第二及該第一格柵的該等間隙部份重疊50%。 The bars of the first and second grids may each overlap 50% of the gaps of the second and first grids.
每個光接收器可輸出位準與該光接收器收到之光量相關的訊號。步驟(e)可包括下列步驟:精細定位該基板、該陰影遮罩或兩者,直到由該等多個光接收器輸出之該等訊號的一位準組合等於一預定值或落在一預定值範圍內。該預定值可為零。 Each optical receiver can output a signal level related to the amount of light received by the optical receiver. Step (e) may comprise the steps of: finely locating the substrate, the shadow mask or both until a quasi-combination of the signals output by the plurality of optical receivers is equal to a predetermined value or falls on a predetermined Within the range of values. The predetermined value can be zero.
該基板及該陰影遮罩各可具有矩形或方形以及一格柵毗鄰該矩形或方形的各個角落。每個條桿之縱軸可與該對應基板或陰影遮罩之中心軸呈±15度地徑向延伸。 The substrate and the shadow mask may each have a rectangular or square shape and a grid adjacent to each corner of the rectangle or square. The longitudinal axis of each bar may extend radially ±15 degrees from the central axis of the corresponding substrate or shadow mask.
2‧‧‧陰影遮罩沉積系統 2‧‧‧Shadow mask deposition system
4、4a~4x‧‧‧沉積真空容器 4, 4a ~ 4x‧ ‧ deposition vacuum container
6‧‧‧基板 6‧‧‧Substrate
8‧‧‧分配捲筒 8‧‧‧Distribution reel
10‧‧‧收線捲筒 10‧‧‧Retracting reel
12、12a、12b‧‧‧沉積源 12, 12a, 12b‧‧‧ deposition source
14、14a、14b‧‧‧基板支架 14, 14a, 14b‧‧‧ substrate holder
15、15a、15b、15’‧‧‧陰影遮罩對準系統 15, 15a, 15b, 15'‧‧‧ Shadow Mask Alignment System
16、16a、16b‧‧‧陰影遮罩 16, 16a, 16b‧‧‧ shadow mask
20‧‧‧移動平台 20‧‧‧Mobile platform
20A‧‧‧Y-θ平台/移動平台 20A‧‧‧Y-θ platform/mobile platform
20B‧‧‧X-Z平台/移動平台 20B‧‧‧X-Z platform/mobile platform
22‧‧‧控制器 22‧‧‧ Controller
24、24A~24D‧‧‧光源 24, 24A~24D‧‧‧ light source
26、26A~26D‧‧‧光接受器 26, 26A~26D‧‧‧ light receiver
28、28A~28D、30、30A~30D‧‧‧格柵 28, 28A~28D, 30, 30A~30D‧‧‧ Grille
32、34‧‧‧中央部份 32, 34‧‧‧ central part
36、36A~36D、36’、36A’~36D’‧‧‧光路 36, 36A~36D, 36', 36A'~36D’‧‧‧ light path
38‧‧‧LED 38‧‧‧LED
40‧‧‧準直光學元件/透鏡 40‧‧‧ Collimating optics/lens
42、46‧‧‧條桿 42, 46‧‧‧ rods
44、48‧‧‧間隙 44, 48‧ ‧ gap
50‧‧‧聚焦光學元件/透鏡 50‧‧‧Focus optics/lens
52、52A~52D‧‧‧PIN二極體 52, 52A~52D‧‧‧PIN diode
54‧‧‧類比至數位(A/D)轉換器 54‧‧‧ Analog to Digital (A/D) Converter
60、60A~60D‧‧‧分束器 60, 60A~60D‧‧ ‧ beam splitter
110‧‧‧光阻沉積站 110‧‧‧Photoresist Deposition Station
112‧‧‧烘烤站 112‧‧‧ baking station
114‧‧‧研磨站 114‧‧‧ Grinding station
θ1、θ2‧‧‧標稱方位角 Θ1, θ2‧‧‧ nominal azimuth
X、Y、Z、θ‧‧‧方向 X, Y, Z, θ‧‧‧ directions
圖1A示意地圖示用於形成高解析度OLED主動矩陣背板之像素結構的陰影遮罩沉積系統;圖1B的放大圖圖示圖1A之陰影遮罩沉積系統的單一沉積真空容器;圖2示意地圖示陰影遮罩對準系統之第一具體實施例;圖3A及圖3B的平面圖各自圖示示範基板與陰影遮罩,兩者包含許多對準格柵以利陰影遮罩對於基板的方位及定位,反之亦然;圖4為沿著圖2中之直線IV-IV繪出的視圖;圖5為沿著圖2中之直線V-V繪出的視圖;圖6示意圖示陰影遮罩對準系統的第二具體實施例; 圖7為沿著圖6中之直線VI-VI繪出的視圖;以及圖8為沿著圖6中之直線VII-VII繪出的視圖。 1A schematically illustrates a shadow mask deposition system for forming a pixel structure of a high resolution OLED active matrix backplane; FIG. 1B is an enlarged view illustrating a single deposition vacuum vessel of the shadow mask deposition system of FIG. 1A; FIG. A first embodiment of the shadow mask alignment system is schematically illustrated; the plan views of Figures 3A and 3B each illustrate an exemplary substrate and a shadow mask, both of which include a plurality of alignment grids to facilitate shadow masking of the substrate. Azimuth and positioning, and vice versa; Figure 4 is a view taken along line IV-IV in Figure 2; Figure 5 is a view taken along line VV in Figure 2; Figure 6 is a schematic view of the shadow mask A second embodiment of the alignment system; Figure 7 is a view taken along line VI-VI in Figure 6; and Figure 8 is a view taken along line VII-VII in Figure 6.
請參考圖1A及1B,用於形成電子裝置(例如但不限於:高解析度主動矩陣有機發光二極體(OLED)顯示器)的陰影遮罩沉積系統2包括多個串聯排列的沉積真空容器4(例如,沉積真空容器4a至4x)。沉積真空容器4的排列及數目取決於待用它形成之任何給定產品的必要沉積事件數。 Referring to FIGS. 1A and 1B, a shadow mask deposition system 2 for forming an electronic device such as, but not limited to, a high-resolution active matrix organic light-emitting diode (OLED) display includes a plurality of deposition vacuum containers 4 arranged in series. (For example, vacuum containers 4a to 4x are deposited). The arrangement and number of deposition vacuum vessels 4 depends on the number of necessary deposition events for any given product to be formed therefrom.
在陰影遮罩沉積系統2的一示範非限定用途中,連續可撓基板6藉助於包含分配捲筒(dispensing reel)8及收線捲筒(take-up reel)10的捲筒至捲筒機構(reel-to-reel mechanism)來平移穿過串聯排列的沉積真空容器4。替換地,基板6可為用本技藝任何習知構件來平移穿過串聯排列沉積真空容器4的單獨(或連續)基板。之後,為了描述本發明,假設基板6為單獨基板。 In an exemplary non-limiting use of the shadow mask deposition system 2, the continuous flexible substrate 6 is by means of a reel-to-reel mechanism comprising a dispensing reel 8 and a take-up reel 10. (reel-to-reel mechanism) to translate through the deposition vacuum vessel 4 arranged in series. Alternatively, substrate 6 can be a separate (or continuous) substrate that is translated through a series arrangement of vacuum vessels 4 using any of the conventional components of the art. Hereinafter, in order to describe the present invention, it is assumed that the substrate 6 is a separate substrate.
對於任意多個沉積真空容器4,每個沉積真空容器包含沉積源12、基板支架14、陰影遮罩對準系統15、以及陰影遮罩16。例如,沉積真空容器4a包含沉積源12a、基板支架14a、遮罩對準系統15a、以及陰影遮罩16a;沉積真空容器4b包含沉積源12b、基板支架14b、遮罩對準系統15b、以及陰影遮罩16b;等等。 For any plurality of deposition vacuum vessels 4, each deposition vacuum vessel includes a deposition source 12, a substrate holder 14, a shadow mask alignment system 15, and a shadow mask 16. For example, the deposition vacuum vessel 4a includes a deposition source 12a, a substrate holder 14a, a mask alignment system 15a, and a shadow mask 16a; the deposition vacuum vessel 4b includes a deposition source 12b, a substrate holder 14b, a mask alignment system 15b, and a shadow Mask 16b; and so on.
每個沉積源12充滿將會在沉積期間通過對應陰影遮罩16之一或更多開口來沉積於基板6上的所欲材料,對應陰影遮罩16在對應沉積真空容器4中與基板6之一部份保持密切接觸。陰影遮罩16可為類型揭示於頒給Brody之美國專利第7,638,417 號的習知單層陰影遮罩或複合(多層)陰影遮罩,該文獻併入本文作為參考資料。 Each deposition source 12 is filled with a desired material that will be deposited on the substrate 6 by one or more openings corresponding to the shadow mask 16 during deposition, corresponding to the shadow mask 16 in the corresponding deposition vacuum vessel 4 and the substrate 6. Some remain in close contact. The shadow mask 16 can be disclosed as a type in U.S. Patent No. 7,638,417 to Brody. Conventional single layer shadow masks or composite (multilayer) shadow masks are incorporated herein by reference.
陰影遮罩沉積系統2的每個陰影遮罩16包含一或更多開口。每個陰影遮罩16中的開口(或數個)對應至在基板6平移穿過陰影遮罩沉積系統2時將會由對應沉積真空容器4中之對應沉積源12沉積於基板6上之材料的所欲圖形。 Each shadow mask 16 of the shadow mask deposition system 2 includes one or more openings. The openings (or numbers) in each of the shadow masks 16 correspond to materials that will be deposited on the substrate 6 by corresponding deposition sources 12 in the corresponding deposition vacuum vessel 4 as the substrate 6 is translated through the shadow mask deposition system 2. The desired graphic.
每個陰影遮罩16可由,例如,鎳,鉻、鋼、銅、可伐合金(Kovar)或因伐合金(Invar)構成,以及厚度最好在20至200微米之間,以及在20至50微米之間更好。例如,可伐合金及因伐合金可由美國俄勒岡州亞甚蘭的ESPICorp公司取得。在美國,可伐合金®的註冊商標為第337,962號,目前由特拉華州威爾明頓的CRS Holdings公司擁有,以及因伐合金®的註冊商標為第63,970號,目前由法國的Imphy S.A公司擁有。 Each of the shadow masks 16 may be composed of, for example, nickel, chrome, steel, copper, Kovar or Invar, and preferably between 20 and 200 microns thick, and between 20 and 50. Better between microns. For example, Kovar and Invar may be obtained from ESPICorp, Inc., Azul, Oregon, USA. In the United States, Kovar Alloy® is registered under No. 337,962 and is currently owned by CRS Holdings of Wilmington, Delaware, and the registered trademark of Invar® is No. 63,970, currently by Imphy SA of France. have.
熟諳此藝者明白陰影遮罩沉積系統2可包含附加平台(未圖示),例如退火平台、試驗平台、一或更多清洗平台、切割及安裝平台、等等眾所周知者。此外,對於特定的應用,本技藝一般技術人員可按需要修改沉積真空容器4的數目、目的及排列用於以所欲次序沉積一或更多材料。在頒給Brody等人的美國專利第6,943,066號中有揭示示範陰影遮罩沉積系統及其使用方法,該文獻併入本文作為參考資料。 Those skilled in the art will appreciate that the shadow mask deposition system 2 can include additional platforms (not shown), such as an annealing platform, a test platform, one or more cleaning platforms, a cutting and mounting platform, and the like. Moreover, for a particular application, one of ordinary skill in the art can modify the number, purpose, and arrangement of deposition vacuum vessels 4 as needed to deposit one or more materials in the desired order. An exemplary shadow mask deposition system and method of use thereof are disclosed in U.S. Patent No. 6,943,066, the disclosure of which is incorporated herein by reference.
沉積真空容器4可用來沉積數種材料於基板6以在基板6上形成電子裝置的一或更多電子元件。每個電子元件可為,例如,薄膜電晶體(TFT)、記憶元件、電容器、等等。可沉積一或更多電子元件的組合以形成較高層級的電子元件,例如但不 受限於,電子裝置的次像素(sub-pixel)或像素。如併入本文作為參考資料的美國專利第6,943,066號所述的,藉由在連續沉積事件中經由沉積真空容器4連續沉積材料於基板6上可單獨形成多層電路。 The deposition vacuum vessel 4 can be used to deposit several materials on the substrate 6 to form one or more electronic components of the electronic device on the substrate 6. Each of the electronic components may be, for example, a thin film transistor (TFT), a memory element, a capacitor, or the like. A combination of one or more electronic components can be deposited to form higher level electronic components, such as but not Limited to, sub-pixels or pixels of an electronic device. The multilayer circuit can be separately formed by continuously depositing material on the substrate 6 via the deposition vacuum vessel 4 in a continuous deposition event as described in U.S. Patent No. 6,943,066, the disclosure of which is incorporated herein by reference.
每個沉積真空容器4係連接至真空來源(未圖示),其係可操作用以在其中建立適當的真空以便使得配置於對應沉積源12的材料能夠以本技藝所習知的方式(例如,濺鍍或氣相沉積)通過對應陰影遮罩16的一或更多開口沉積於基板6上。 Each deposition vacuum vessel 4 is connected to a vacuum source (not shown) that is operable to establish a suitable vacuum therein to enable the material disposed in the corresponding deposition source 12 to be in a manner known in the art (eg, , sputtering or vapor deposition) is deposited on the substrate 6 through one or more openings corresponding to the shadow mask 16.
不論基板6的形式為何,例如,連續板材或單獨基板,每個沉積真空容器4可包含在基板6平移穿過它時可避免基板6下垂的支架或導件。 Regardless of the form of the substrate 6, for example, a continuous sheet or a separate substrate, each deposition vacuum container 4 can include a holder or guide that avoids sagging of the substrate 6 as it is translated through it.
在陰影遮罩沉積系統2操作時,在基板6行進通過沉積真空容器4時,配置於每個沉積源12的材料在有適當的真空下通過對應陰影遮罩16的一或更多開口沉積於對應沉積真空容器4中之該基板6上,而在基板6上形成複數個連續的圖形。更特別的是,基板6在每個沉積真空容器4中定位成有預定的時距。在此預定時距期間,材料由對應沉積源12沉積於基板6上。在此預定時距後,基板6前進至下一個串聯的真空容器用以額外的加工(如適用)。繼續前進直到基板6經過所有的沉積真空容器4於是基板6離開序列中最後一個沉積真空容器4。 During operation of the shadow mask deposition system 2, as the substrate 6 travels through the deposition of the vacuum vessel 4, the material disposed at each deposition source 12 is deposited by one or more openings of the corresponding shadow mask 16 under appropriate vacuum. Corresponding to the substrate 6 in the deposition vacuum vessel 4, a plurality of continuous patterns are formed on the substrate 6. More specifically, the substrate 6 is positioned in each deposition vacuum vessel 4 for a predetermined time interval. During this predetermined time interval, material is deposited on the substrate 6 by the corresponding deposition source 12. After this predetermined time interval, the substrate 6 is advanced to the next series of vacuum vessels for additional processing (if applicable). Moving on until the substrate 6 passes through all of the deposition vacuum vessel 4 and the substrate 6 leaves the last deposition vacuum vessel 4 in the sequence.
請參考圖2及繼續參考圖1A與圖1B,遮罩對準系統15包含一或更多移動平台20用以控制基板6、陰影遮罩16或兩者的方位及位置以用後述方式對準基板6與陰影遮罩16。遮罩對準系統15的一合意非限定具體實施例包含耦合至Y-θ平台20A的基 板6與耦合至X-Z平台20B的陰影遮罩16。利用一或更多平台20使得基板6、陰影遮罩16或兩者在X方向、Y方向、Z方向及/或θ方向(在本實施例中,θ方向為基板6在X-Y平面的旋轉平移)可平移、方位及定位為本技藝所習知,為求簡潔,在此不進一步加以描述。 Referring to FIG. 2 and with continued reference to FIGS. 1A and 1B, the mask alignment system 15 includes one or more moving platforms 20 for controlling the orientation and position of the substrate 6, the shadow mask 16, or both for alignment as will be described later. Substrate 6 and shadow mask 16. A desirable non-limiting embodiment of the mask alignment system 15 includes a base coupled to the Y-theta platform 20A. The board 6 is coupled to a shadow mask 16 of the X-Z stage 20B. Utilizing one or more platforms 20 such that the substrate 6, shadow mask 16 or both are in the X, Y, Z and / or θ directions (in the present embodiment, the θ direction is the rotation of the substrate 6 in the XY plane) The translation, orientation and positioning are known to the art and will not be further described herein for the sake of brevity.
Y-θ平台20A及X-Z平台20B是在控制器22的控制下操作,可用硬體及/或軟體的任何適當及/或合意組合來實作該控制器22以使得可用後述方式控制移動平台20A及20B。 The Y-theta platform 20A and the XZ platform 20B are operated under the control of the controller 22, and the controller 22 can be implemented with any suitable and/or desirable combination of hardware and/or software to enable control of the mobile platform 20A in a manner that will be described later. And 20B.
遮罩對準系統15更包含一或更多光源24與一或更多光接收器26。每個光源24經定位成可對準一個光接收器26以定義一對光源24-光接收器26。每一對光源24-光接收器26定義在兩者之間的光路36。 The mask alignment system 15 further includes one or more light sources 24 and one or more light receivers 26. Each light source 24 is positioned to be aligned with a light receiver 26 to define a pair of light sources 24-to-light receiver 26. Each pair of light sources 24-optical receiver 26 defines an optical path 36 therebetween.
使用遮罩對準系統時,基板6及陰影遮罩16位在每對光源24-光接收器26的光路36中。在一合意具體實施例中,遮罩對準系統15包含四個光源24與四個光接收器26,總共有定義四條光路36的4對光源24-光接收器26。不過,這不應被視為是要限定本發明。 When the mask is used to align the system, the substrate 6 and the shadow mask 16 are positioned in the optical path 36 of each pair of light sources 24-photoreceiver 26. In a preferred embodiment, the mask alignment system 15 includes four light sources 24 and four light receivers 26, for a total of four pairs of light sources 24-light receivers 26 defining four optical paths 36. However, this should not be construed as limiting the invention.
請參考圖3A至圖3B及繼續參考圖1A至圖1B及圖2,基板6包含一或更多格柵28,以及陰影遮罩16包含一或更多格柵30。在一非限定具體實施例中,基板6包含四個格柵28A-28D以及陰影遮罩16包含四個格柵30A-30D。在圖示於圖3A的具體實施例中,基板6有矩形或方形以及每個格柵28A-28D經定位成與基板6的四個角落中之一個毗鄰。同樣,陰影遮罩16有矩形或方形以及每個格柵30A-30D經定位成與陰影遮罩16的四個角落中 之一個毗鄰。基板6的中央部份(以元件符號32表示)是將會在基板6上發生沉積事件的地方。陰影遮罩16的中央部份(以元件符號34表示)為陰影遮罩16包含由一或更多開口組成之圖形的地方,來自沉積源12的材料通過該等開口沉積於區域32上,該圖形與由陰影遮罩16區域34中之一或更多開口組成的圖形相同。 Referring to FIGS. 3A-3B and continuing to refer to FIGS. 1A-1B and 2, the substrate 6 includes one or more grids 28, and the shadow mask 16 includes one or more grids 30. In a non-limiting embodiment, the substrate 6 includes four grids 28A-28D and the shadow mask 16 includes four grids 30A-30D. In the particular embodiment illustrated in FIG. 3A, the substrate 6 has a rectangular or square shape and each of the grids 28A-28D is positioned adjacent one of the four corners of the substrate 6. Likewise, the shadow mask 16 has a rectangular or square shape and each of the grids 30A-30D is positioned in four corners of the shadow mask 16 One of them is adjacent. The central portion of the substrate 6 (indicated by reference numeral 32) is where deposition events will occur on the substrate 6. The central portion of the shadow mask 16 (indicated by reference numeral 34) is where the shadow mask 16 contains a pattern of one or more openings through which material from the deposition source 12 is deposited on the region 32. The graphic is the same as the one formed by one or more of the openings in the shadow mask 16 region 34.
在圖示於圖3A的基板6之具體實施例中,格柵28B為格柵28A以圖3A之Y軸為中心線的鏡像;以及,格柵28C、28D為格柵28B、28A各自以圖3A之x軸為中心線的鏡像。不過,這不應被視為是要限定本發明。 In the particular embodiment of the substrate 6 illustrated in FIG. 3A, the grid 28B is a mirror image of the grid 28A centered on the Y-axis of FIG. 3A; and the grids 28C, 28D are each illustrated by the grids 28B, 28A. The x-axis of 3A is a mirror image of the centerline. However, this should not be construed as limiting the invention.
同樣,在圖示於圖3B的陰影遮罩16之具體實施例中,格柵30B為格柵30A以圖3B之Y軸為中心線的鏡像;以及,格柵30C、30D為格柵30B、30A各自以圖3B之X軸為中心線的鏡像。不過,這不應被視為是要限定本發明。 Similarly, in a particular embodiment of the shadow mask 16 illustrated in FIG. 3B, the grid 30B is a mirror image of the grid 30A centered on the Y-axis of FIG. 3B; and the grids 30C, 30D are grids 30B, Each of 30A is mirrored with the X-axis of Fig. 3B as a center line. However, this should not be construed as limiting the invention.
此時描述使用遮罩對準系統15對準有一或更多格柵28的基板6與有一或更多格柵30的陰影遮罩16。 A shadow mask 16 that aligns the substrate 6 of one or more of the grids 28 with one or more grids 30 using the mask alignment system 15 is now described.
開始時,如圖2所示,基板6移入而在光源(或數個)24與光接收器(或數個)26之間的光路36中與陰影遮罩16隔開粗略地(或大致)對準。當基板6與陰影遮罩16在圖2所示之光路36中粗略對準時,基板6的每個格柵28與陰影遮罩16的每個格柵30定位於一對光源24-光接收器26的一光路36中。例如,在遮罩對準系統15包含各自定義四條光路36A-36D的4對光源-光接收器24A-26A、24B-26B、24C-26C及24D-26D,以及基板6包含格柵28A-28D,及陰影遮罩16包含格柵30A-30D時:格柵28A及30A定位於從光源24A到光接收器26A的光路36A中;格柵28B及30B 定位於從光源24B到光接收器26B的光路36B中;格柵28C及30C定位於從光源24C到光接收器26C的光路36C中;以及,格柵28D及30D定位於從光源24D到光接收器26D的光路36D中。 Initially, as shown in FIG. 2, the substrate 6 is moved in and is spaced (or substantially) from the shadow mask 16 in the optical path 36 between the light source (or plurality) 24 and the light receiver (or plurality) 26. alignment. When the substrate 6 and the shadow mask 16 are roughly aligned in the optical path 36 shown in FIG. 2, each of the grids 28 of the substrate 6 and each of the grids 30 of the shadow mask 16 are positioned at a pair of light sources 24 - light receivers 26 of a light path 36. For example, the mask alignment system 15 includes four pairs of light source-light receivers 24A-26A, 24B-26B, 24C-26C, and 24D-26D each defining four optical paths 36A-36D, and the substrate 6 includes a grid 28A-28D. And when the shadow mask 16 includes the grids 30A-30D: the grids 28A and 30A are positioned in the light path 36A from the light source 24A to the light receiver 26A; the grids 28B and 30B Positioned in the optical path 36B from the light source 24B to the light receiver 26B; the grids 28C and 30C are positioned in the optical path 36C from the light source 24C to the light receiver 26C; and the grids 28D and 30D are positioned from the light source 24D to the light receiving In the optical path 36D of the device 26D.
圖4的俯視圖圖示在光源24A-24D、光接收器26A-26D(以虛線圖示)之間粗略對準的基板6與陰影遮罩16,以及各自用於各對光源-光接收器之光路36A-36D的位置。應瞭解,圖4中,格柵28A及30A位在光路36A中;格柵28B及30B位在光路36B中;格柵28C及30C位在光路36C中;以及,格柵28D及30D位在光路36D中。 4 is a plan view showing the substrate 6 and the shadow mask 16 roughly aligned between the light sources 24A-24D, the light receivers 26A-26D (shown in phantom), and each for each pair of light source-light receivers. The position of the light path 36A-36D. It should be understood that, in FIG. 4, the grids 28A and 30A are located in the optical path 36A; the grids 28B and 30B are located in the optical path 36B; the grids 28C and 30C are located in the optical path 36C; and the grids 28D and 30D are located in the optical path 36D.
請參考圖5,此時描述基板6中之一格柵28與陰影遮罩16中之一格柵30(亦即,一對格柵28-30)沿著一光路36的精細對準。不過,應瞭解,格柵對28-30沿著圖5之光路36的精細對準也可應用於位在各條光路36中之各對格柵28-30的對準。 Referring to FIG. 5, a fine alignment of one of the grids 28 of the substrate 6 with one of the grids 30 of the shadow mask 16 (i.e., a pair of grids 28-30) along an optical path 36 is described. However, it should be understood that the fine alignment of the grid pairs 28-30 along the optical path 36 of FIG. 5 can also be applied to the alignment of the pairs of grids 28-30 located in each of the optical paths 36.
在適當的時間,激活每個光源24以沿著它的光路36輸出光線。在一非限定的具體實施例中,每個光源包含輸出光線至準直光學元件/透鏡40的LED 38,該準直光學元件/透鏡40係準直由LED 38輸出的光線以及沿著光路36輸出該準直光。 At the appropriate time, each light source 24 is activated to output light along its optical path 36. In a non-limiting embodiment, each light source includes an LED 38 that outputs light to a collimating optic/lens 40 that collimates light output by LED 38 and along optical path 36. The collimated light is output.
基板6的每個格柵28包含多支隔開條桿42,最好是隔開的平行條桿。每對隔開條桿42有間隙44。最好每個間隙44的寬度相同。同樣,每個格柵30包含多支隔開條桿46,最好是隔開的平行條桿。每對隔開條桿46有間隙48。最好每個間隙48的寬度相同。最好每個間隙44及每個間隙48的寬度也相同。不過,格柵28、格柵30、格柵28及30兩者有相同的間隙寬度不應視為是要限定本發明。 Each of the grids 28 of the substrate 6 includes a plurality of spaced apart bars 42, preferably spaced apart parallel bars. Each pair of spaced apart bars 42 has a gap 44. Preferably, each gap 44 has the same width. Likewise, each grid 30 includes a plurality of spaced apart bars 46, preferably spaced apart parallel bars. Each pair of spaced apart bars 46 has a gap 48. Preferably, each gap 48 has the same width. Preferably, each gap 44 and each gap 48 have the same width. However, the same gap width of both the grid 28, the grid 30, the grids 28 and 30 should not be construed as limiting the invention.
繼續參考圖5以及再參考圖3A與圖3B,將每個條桿或基板6及陰影遮罩16的每個間隙定向或定位成各自對於X軸有相同的角度是不必要的。例如,最好在標稱上將每個條桿42的縱軸與基板6的每個間隙44定向或定位成對於圖3A之X軸有45度的θ1。不過,相對於X軸,每個條桿42縱軸與每個間隙44的方位角θ1與45度的標稱方位角θ1可相差±15度。此外,可將每個條桿42與每個間隙44定向或定位成有不同的角度θ1。不過,基板6之每個格柵的條桿42與間隙44最好平行。 With continued reference to FIG. 5 and with reference to FIGS. 3A and 3B, it is not necessary to orient or position each gap of each bar or substrate 6 and shadow mask 16 to have the same angle for each of the X axes. For example, the longitudinal axis of each bar 42 and each gap 44 of the substrate 6 are preferably nominally oriented or positioned to have a 45 degree θ1 for the X axis of FIG. 3A. However, with respect to the X-axis, the azimuth angle θ1 of each of the bars 42 and the longitudinal azimuth 44 of each of the gaps 44 may differ by ±15 degrees from the nominal azimuth angle θ1 of 45 degrees. Additionally, each bar 42 can be oriented or positioned with a different angle θ1 from each gap 44. However, the bars 42 of each of the grids of the substrate 6 are preferably parallel to the gaps 44.
同樣,最好在標稱上將每個條桿46的縱軸與陰影遮罩16的每個間隙48定向或定位成對於圖3B之X軸有45度的角θ2。不過,相對於X軸,每個條桿46縱軸與每個間隙48的方位角θ2與45度的標稱方位角θ2可相差±15度。此外,可將每個條桿46與每個間隙48定向或定位成不同的角度θ2。不過,陰影遮罩16之每個格柵的條桿46與間隙48最好平行。 Likewise, the longitudinal axis of each bar 46 and each gap 48 of the shadow mask 16 are preferably nominally oriented or positioned at an angle θ2 of 45 degrees with respect to the X-axis of Figure 3B. However, with respect to the X-axis, the azimuth angle θ2 of the longitudinal axis of each bar 46 and each gap 48 may differ by ±15 degrees from the nominal azimuth angle θ2 of 45 degrees. Additionally, each bar 46 can be oriented or positioned at a different angle θ2 from each gap 48. However, the bars 46 of each of the grids of the shadow mask 16 are preferably parallel to the gap 48.
更一般地,每個條桿42、46的縱軸,每個間隙44、48的縱軸最好各自與基板6、陰影遮罩16的中心呈±15度地徑向延伸。對於每個格柵,該格柵的條桿與間隙最好平行。不過,視情形而定,也設想該格柵的條桿與間隙可採輻狀圖形方式由基板6或陰影遮罩16的中心徑向延伸。因此,例如但不受限於,在將角度θ1-θ2定向或定位成對於對應X軸有30度角時,每個條桿42、46的縱軸與每個間隙44、48的縱軸可與30度相差±15度。 More generally, the longitudinal axes of each of the bars 42, 46, preferably each of the longitudinal axes of the gaps 44, 48 extend radially outwardly of the substrate 6, the center of the shadow mask 16, by ±15 degrees. For each grid, the bars of the grid are preferably parallel to the gap. However, depending on the circumstances, it is also contemplated that the bars and gaps of the grid may extend radially from the center of the substrate 6 or shadow mask 16 in a radial pattern. Thus, for example and without limitation, the longitudinal axis of each of the bars 42, 46 and the longitudinal axis of each of the gaps 44, 48 may be when the angles θ1 - θ2 are oriented or positioned at an angle of 30 degrees for the corresponding X axis. It differs from 30 degrees by ±15 degrees.
應瞭解,任何一對格柵28-30的條桿42、46與間隙48、44之間的角位移有可能相差跟30度一樣多,例如,當條桿42對於基板6之X軸有60度角時,間隙48對於它的陰影遮罩16之 X軸有30度角,以及基板6與陰影遮罩16的X軸平行;60度減30度等於30度。 It will be appreciated that the angular displacement between the bars 42 and 46 of any pair of grids 28-30 and the gaps 48, 44 may differ by as much as 30 degrees, for example, when the bar 42 has 60 for the X axis of the substrate 6. At a degree angle, the gap 48 is for its shadow mask 16 The X-axis has a 30 degree angle, and the substrate 6 is parallel to the X-axis of the shadow mask 16; 60 degrees minus 30 degrees is equal to 30 degrees.
由光源24輸出的準直光各自通過經粗略對準之格柵28、30的間隙44、48,以及被光接收器26接收。光接收器26包含聚焦光學元件/透鏡50,其係聚焦在經過格柵28、30的經粗略對準之間隙44、48之後的準直光以便被形式為PIN二極體52的光檢測構件接收。遮罩對準系統15中,每個光接收器26之每個PIN二極體52的輸出會提供給控制器22的類比至數位(A/D)轉換器54用以將每個PIN二極體52的類比輸出轉換成對應數位訊號給控制器22的處理構件處理。每個PIN二極體52的輸出對應至PIN二極體52所接收的光量,PIN二極體52所接收的光量越大,它的輸出電壓越大;PIN二極體52所接收的光量越小,它的輸出電壓越小。 The collimated light output by the light source 24 passes through the gaps 44, 48 of the roughly aligned grids 28, 30, and is received by the light receiver 26. The light receiver 26 includes a focusing optics/lens 50 that focuses on the collimated light that passes through the roughly aligned gaps 44, 48 of the grids 28, 30 to be illuminated by the light detecting member in the form of a PIN diode 52. receive. In the mask alignment system 15, the output of each PIN diode 52 of each of the light receivers 26 is provided to an analog to digital (A/D) converter 54 of the controller 22 for each PIN diode. The analog output of body 52 is converted to a corresponding digital signal for processing by the processing component of controller 22. The output of each PIN diode 52 corresponds to the amount of light received by the PIN diode 52. The greater the amount of light received by the PIN diode 52, the greater its output voltage; the greater the amount of light received by the PIN diode 52 Small, its output voltage is smaller.
在適當的時間,控制器22開始經由Y-θ平台20A及/或X-Z平台20B來精細定位基板6、陰影遮罩16或兩者以使基板6與陰影遮罩16相互對準,藉此定位每一對格柵28-30於光路36中,格柵28至少有一些條桿42與格柵30中之一些間隙48(在橫亙於光路36的方向,最好垂直地)重疊至想要的程度,以及格柵30至少有一些條桿46與格柵28中之一些間隙44(在橫亙於光路36的方向,最好垂直地)重疊至想要的程度。如圖5所示,最好陰影遮罩16的每個間隙48與基板6的條桿42部份重疊,以及基板6的每個間隙44與陰影遮罩16的條桿46部份重疊。更合意地,條桿42及46分別與間隙48、44的寬度部份重疊50%。換言之,間隙48、44有50%的寬度與條桿42、46重疊。 At the appropriate time, controller 22 begins to finely position substrate 6, shadow mask 16 or both via Y-theta platform 20A and/or XZ platform 20B to align substrate 6 with shadow mask 16 thereby positioning Each pair of grids 28-30 is in the optical path 36. At least some of the bars 42 overlap with some of the gaps 48 in the grid 30 (in the direction transverse to the optical path 36, preferably perpendicularly) to the desired The extent, and the grid 30, at least some of the bars 46 overlap with some of the gaps 44 in the grid 28 (preferably perpendicular to the direction of the optical path 36), to the desired extent. As shown in FIG. 5, preferably each gap 48 of the shadow mask 16 partially overlaps the bar 42 of the substrate 6, and each gap 44 of the substrate 6 partially overlaps the bar 46 of the shadow mask 16. More desirably, the bars 42 and 46 overlap 50% of the width of the gaps 48, 44, respectively. In other words, the gaps 48, 44 have a 50% width that overlaps the bars 42, 46.
對於位在光路36中之一條的每一對格柵28-30,控制器22藉由拿該光路36上之PIN二極體52的數位化輸出(此數位化輸出係經由A/D 54得到以及該數位化輸出對應至穿經間隙48、44的準直光)與一預定值或一預定值範圍做比較來檢測何時條桿42、46與間隙48、44重疊至想要的程度。在檢測出PIN二極體52的數位化輸出不在預定值或預定值範圍內時,控制器22導致一或更多移動平台20A及20B可視實際需要調整基板6、陰影遮罩16或兩者的的X、Y、及/或θ位置,直到控制器22經由PIN二極體52的數位化輸出檢測出條桿42、46各自與格柵對28-30之間隙48、44重疊有想要的數量。由於條桿42、46各自與格柵對28-30間隙48、44重疊的數量會影響準直光到達PIN二極體52的數量,藉由比較PIN二極體52的數位化輸出與預定值或預定值範圍,控制器22可判斷條桿與格柵對28-30之間隙在光路36的適當重疊量何時達成。以類似方式,控制器22可判斷條桿與其他每對格柵28-30的間隙在其他每條光路36的適當重疊數量何時達成。 For each pair of grids 28-30 located in one of the optical paths 36, the controller 22 takes the digitized output of the PIN diode 52 on the optical path 36 (this digital output is obtained via the A/D 54). And the digitized output corresponds to a collimated light passing through the gaps 48, 44) for comparison with a predetermined value or a predetermined range of values to detect when the bars 42, 46 overlap the gaps 48, 44 to a desired extent. Upon detecting that the digitized output of the PIN diode 52 is not within a predetermined or predetermined range of values, the controller 22 causes the one or more mobile platforms 20A and 20B to adjust the substrate 6, shadow mask 16 or both as needed. The X, Y, and/or θ positions until the controller 22 detects via the digitized output of the PIN diode 52 that the bars 42, 46 are each overlapped with the gaps 48, 44 of the grid pair 28-30. Quantity. Since the number of bars 42, 46 overlapping each of the grid pairs 28-30 gaps 48, 44 affects the amount of collimated light reaching the PIN diode 52, by comparing the digitized output of the PIN diode 52 to a predetermined value Or a predetermined range of values, the controller 22 can determine when the appropriate amount of overlap of the gap between the bar and the pair of grilles 28-30 at the optical path 36 is achieved. In a similar manner, controller 22 can determine when the appropriate amount of overlap of the bar with each of the other pairs of grids 28-30 at each of the other optical paths 36 is achieved.
在一非限定具體實施例中,控制器22最好結合光接收器26A-26D中之所有PIN二極體52的輸出以判斷基板6與陰影遮罩16何時達成適當的X、Y及θ對準。更特別的是,假定控制器22調整基板6、陰影遮罩16或兩者的方位/位置。在經過某一段時間後,控制器22停止調整基板6、陰影遮罩16或兩者的方位/位置,以及造成A/D 54可取樣及數位化光接收器26A-26D中之PIN二極體52A-52D(圖示於圖4)的輸出。控制器22在控制器22的記憶體中聯合PIN二極體52A-52D的數位化輸出與變數f1-f4,以及基板6、陰影遮罩16或兩者之X、Y及旋轉或角(9)位移用以下方 式來組合該等變數:‧(方程式1)X位移=f1-f2-f3+f4‧(方程式2)Y位移=f1+f2-f3-f4;以及‧(方程式3)θ位移=f1-f2+f3-f4。 In a non-limiting embodiment, controller 22 preferably combines the outputs of all of PIN diodes 52 in optical receivers 26A-26D to determine when substrate 6 and shadow mask 16 have reached an appropriate X, Y, and θ pair. quasi. More specifically, assume that controller 22 adjusts the orientation/position of substrate 6, shadow mask 16, or both. After a certain period of time, the controller 22 stops adjusting the orientation/position of the substrate 6, the shadow mask 16, or both, and causes the A/D 54 to sample and digitize the PIN diodes in the optical receivers 26A-26D. The output of 52A-52D (shown in Figure 4). The controller 22 combines the digitized output of the PIN diodes 52A-52D with the variables f1-f4, and the X, Y and rotation or angle of the substrate 6, shadow mask 16, or both in the memory of the controller 22. ) displacement is used below Combine the variables: ‧ (Equation 1) X displacement = f1 - f2 - f3 + f4‧ (Equation 2) Y displacement = f1 + f2 - f3 - f4; and ‧ (Equation 3) θ displacement = f1 - f2 +f3-f4.
在控制器22判斷由以上方程式1-3決定的X、Y及θ位移各等於0時,控制器22認識到此情況對應至基板6及陰影遮罩16有所欲對準。另一方面,如果X位移、Y位移或θ位移中之任一不等於0,控制器22認識到此情況對應至基板6及陰影遮罩16沒有所欲對準,於是控制器22造成一或更多移動平台20A-20B調整基板6、陰影遮罩16或兩者的X、Y及/或θ位置(或數個),視實際需要造成由以上方程式1-3決定的X位移、Y位移或θ位移各等於0。 When the controller 22 determines that the X, Y, and θ displacements determined by Equations 1-3 above are each equal to 0, the controller 22 recognizes that this corresponds to the alignment of the substrate 6 and the shadow mask 16. On the other hand, if any of the X displacement, the Y displacement, or the θ displacement is not equal to 0, the controller 22 recognizes that this corresponds to the substrate 6 and the shadow mask 16 having no alignment, and the controller 22 causes one or More mobile platforms 20A-20B adjust the X, Y and/or θ position (or several) of the substrate 6, the shadow mask 16 or both, and the X displacement and the Y displacement determined by the above equations 1-3 depending on actual needs. Or the θ shifts are each equal to zero.
控制器22最好重覆下列步驟:調整基板6、陰影遮罩16或兩者的方位/位置;停止調整基板6、陰影遮罩16或兩者的方位/位置;取樣及數位化PIN二極體52A-52D的輸出;以及,判斷由以上方程式1-3決定的X、Y及θ位移是否每個等於0直到由以上方程式1-3決定的X、Y及θ位移每個實際等於0,該等步驟已出現預定的重覆次數,或已經過預定的時間。 The controller 22 preferably repeats the steps of: adjusting the orientation/position of the substrate 6, the shadow mask 16, or both; stopping the orientation/position of the adjustment substrate 6, the shadow mask 16, or both; sampling and digitizing the PIN diode The outputs of the bodies 52A-52D; and, determining whether the X, Y, and θ displacements determined by Equations 1-3 above are each equal to 0 until the X, Y, and θ displacements determined by Equations 1-3 above are each substantially equal to 0, These steps have occurred a predetermined number of repetitions, or a predetermined time has elapsed.
在判斷X、Y及θ位移每個等於0後,控制器22造成在Z方向移動的移動平台20使得基板6及陰影遮罩16由圖5的隔開關係變成密切接觸,此隔開關係的目的係用來對準基板6與陰影遮罩16。 After determining that the X, Y, and θ displacements are each equal to 0, the controller 22 causes the moving platform 20 moving in the Z direction to cause the substrate 6 and the shadow mask 16 to become in close contact from the spaced relationship of FIG. 5, which is in a spaced relationship. The purpose is to align the substrate 6 with the shadow mask 16.
不過,不應視為用方程式1-3以上述方式判斷X、Y及θ位移各等於0是要限定本發明,因為這是設想每個位移可在 對於該位移是獨一或對於該等位移是共同的適當數值範圍內。例如但不受限於,控制器22可經編程為落在±1範圍內的X位移是可接受的,落在±1.5範圍內的Y位移是可接受的,以及落在±0.5範圍內的θ位移是可接受的。替換地,控制器22可經編程為每個位移可使用相同的數值範圍。例如,控制器22可經編程為它可接受X、Y及θ位移中之各者落在±1範圍內。 However, it should not be considered that using Equations 1-3 to determine that the X, Y, and θ displacements are each equal to 0 in the above manner is intended to limit the invention, since it is assumed that each displacement can be The displacement is unique or within a suitable range of values that are common to the displacements. For example and without limitation, the controller 22 can be programmed to have an X displacement that is within a range of ±1 acceptable, a Y displacement that falls within a range of ±1.5, and fall within a range of ±0.5. The θ displacement is acceptable. Alternatively, controller 22 can be programmed to use the same range of values for each displacement. For example, controller 22 can be programmed such that it accepts that each of the X, Y, and θ displacements falls within the range of ±1.
可見,利用光接收器26A-26D之PIN二極體52A-52D的輸出,控制器22可使基板6與陰影遮罩16以高度的準確度處於想要的對準狀態。為此目的,控制器22可累進式改變基板6、陰影遮罩16或兩者的方位/位置直到基板6的格柵28與陰影遮罩16的格柵30對準至想要的程度。在控制器22判斷基板6與陰影遮罩16需要進一步對準的情形下,由用上述方程式1-3決定的X、Y及θ位移值,控制器22可視實際需要做出明智的決定讓基板6、陰影遮罩16或兩者在X、Y及θ方向往那個方向移動或旋轉以改善基板6與陰影遮罩16的對準。因此,控制器22可定向/定位基板6、陰影遮罩16或兩者於第一位置,然後取得光接收器26A-26D之PIN二極體52A-52D的輸出以判斷基板6與陰影遮罩16是否適當地對準。若成立,控制器22造成基板6與陰影遮罩16在Z方向進入密切接觸以準備發生於沉積真空容器4的沉積事件。不過,如果判斷基板6與陰影遮罩16沒有適當地對準,控制器22可累進式改變基板6、陰影遮罩16或兩者的方向/位置至其他位置,在此控制器22取樣光接收器26A-26D之PIN二極體52A-52D的輸出。繼續取樣光接收器26A-26D之PIN二極體52A-52D的輸出以及累進式改變基板6、陰影遮罩16或兩者的方向/位置的處理直到控制器 22用控制器22的程式判定基板6與陰影遮罩16對準至想要的程度。 It can be seen that with the output of the PIN diodes 52A-52D of the light receivers 26A-26D, the controller 22 can cause the substrate 6 and shadow mask 16 to be in a desired alignment with a high degree of accuracy. To this end, the controller 22 can progressively change the orientation/position of the substrate 6, shadow mask 16, or both until the grid 28 of the substrate 6 is aligned with the grid 30 of the shadow mask 16 to the desired extent. In the case where the controller 22 determines that the substrate 6 and the shadow mask 16 need further alignment, the controller 22 can make an sensible decision on the substrate by the X, Y, and θ displacement values determined by Equations 1-3 above. 6. The shadow mask 16 or both are moved or rotated in that direction in the X, Y, and θ directions to improve alignment of the substrate 6 with the shadow mask 16. Therefore, the controller 22 can orient/position the substrate 6, the shadow mask 16 or both in the first position, and then take the output of the PIN diodes 52A-52D of the light receivers 26A-26D to determine the substrate 6 and the shadow mask. 16 is properly aligned. If so, the controller 22 causes the substrate 6 to enter in close contact with the shadow mask 16 in the Z direction to prepare for deposition events that occur in the deposition vacuum vessel 4. However, if it is determined that the substrate 6 and the shadow mask 16 are not properly aligned, the controller 22 may progressively change the direction/position of the substrate 6, the shadow mask 16, or both to other locations, where the controller 22 samples the light reception. The outputs of the PIN diodes 52A-52D of the devices 26A-26D. Continue sampling the output of the PIN diodes 52A-52D of the optical receivers 26A-26D and progressively changing the direction/position of the substrate 6, shadow mask 16 or both until the controller 22, with the program of the controller 22, it is determined that the substrate 6 is aligned with the shadow mask 16 to a desired extent.
也可見,控制器22造成可調整基板6、陰影遮罩16或兩者的方位以定位基板6的格柵28與陰影遮罩16的格柵30,或兩者,直到每條光路36上有預定數量的準直光穿經落在該光路36上的格柵以便由對應光接收器26接受。換言之,控制器22精細地定位基板6、陰影遮罩16或兩者,直到每條光路36上有預定數量的光線穿經該路徑的格柵以及被在該光路上的光接收器接收。 It can also be seen that the controller 22 causes the orientation of the substrate 6, shadow mask 16 or both to be adjusted to position the grid 28 of the substrate 6 and the grid 30 of the shadow mask 16, or both, until each light path 36 has A predetermined amount of collimated light passes through the grid that falls on the optical path 36 for acceptance by the corresponding light receiver 26. In other words, the controller 22 finely positions the substrate 6, the shadow mask 16, or both until a predetermined number of rays of light on each of the optical paths 36 pass through the grid of the path and are received by the light receiver on the optical path.
請參考圖6,另一具體實施例陰影遮罩對準系統15’的所有方面與圖示於圖2的遮罩對準系統15類似,但以下情形除外:每一對光源24-光接受器26位於基板6及陰影遮罩16的同一側;以及每一對光源24-光接受器26與分束器60一起界定一光路36’。更具體言之,基板6的每個格柵28與陰影遮罩16的每個格柵30位於圖示於圖6之一對光源24-光接受器26的一光路36’中。每條光路36’從光源24延伸以便被該等分束器60中之一者反射,該等分束器60中之該一者係經由基板6之陰影遮罩30中與基板6之該格柵28對準的格柵30向格柵28反射來自光源24的光線。打在基板6之格柵28上的光線有些被該格柵28反射回來通過陰影遮罩16中與該格柵28對準的格柵30朝向分束器60。分束器60使反射自基板6之格柵28在穿經陰影遮罩16中與該格柵28對準之格柵30後的一些光線通過到達在該光路36’之終端的光接受器26。 Referring to Figure 6, all aspects of the shadow mask alignment system 15' are similar to the mask alignment system 15 illustrated in Figure 2, except for the following: each pair of light sources 24-photoreceptors 26 is located on the same side of substrate 6 and shadow mask 16; and each pair of light source 24-photoreceptor 26 and beam splitter 60 together define an optical path 36'. More specifically, each of the grids 28 of the substrate 6 and each of the grids 30 of the shadow mask 16 are located in an optical path 36' of the light source 24-photoreceptor 26 of Fig. 6. Each of the optical paths 36' extends from the light source 24 for reflection by one of the beam splitters 60, one of the beam splitters 60 passing through the shadow mask 30 of the substrate 6 and the substrate 6. The grid 30 aligned with the grid 28 reflects the light from the source 24 toward the grid 28. Some of the light striking the grid 28 of the substrate 6 is reflected back by the grid 28 through the grid 30 in the shadow mask 16 that is aligned with the grid 28 toward the beam splitter 60. The beam splitter 60 causes some of the light rays reflected from the grid 28 of the substrate 6 after passing through the grid 30 aligned with the grid 28 in the shadow mask 16 to reach the light receptor 26 at the end of the light path 36'. .
以上說明假設,光源24-光接受器26對、以及分束器60都位於陰影遮罩16與基板6相反的側面上。不過,這是設想, 光源24-光接受器26對與分束器60可位於基板6的另一面上,然後來自光源24被分束器60反射的光線在被陰影遮罩16之格柵30部份反射之前首先穿經基板6的格柵28,以及被部份反射之該光線向後穿經該格柵28至分束器60的通路係使穿經格柵30的一些反射光線傳遞到光接受器26。相應地,在圖6的前述說明及圖示中,位於陰影遮罩16與基板6相反之側面上的光源24-光接受器26對及分束器60不應被視作本發明不應被視為是要限定本發明。 The above description assumes that both the light source 24-photoreceptor 26 pair and the beam splitter 60 are located on the opposite side of the shadow mask 16 from the substrate 6. However, this is an idea, Light source 24-photoreceptor 26 pair and beam splitter 60 may be located on the other side of substrate 6, and then light from source 24 that is reflected by beam splitter 60 is first worn before being partially reflected by grid 30 of shadow mask 16. The passages through the grid 28 of the substrate 6 and the partially reflected light passing back through the grid 28 to the beam splitter 60 are such that some of the reflected light passing through the grid 30 is transmitted to the light receptor 26. Accordingly, in the foregoing description and illustration of FIG. 6, the light source 24-photoreceptor pair 26 and the beam splitter 60 located on the opposite side of the shadow mask 16 from the substrate 6 should not be considered as being invented by the present invention. It is considered to be limiting of the invention.
此時將描述用遮罩對準系統15’對準一或更多格柵28的基板6與有一或更多格柵30的陰影遮罩16。 A shadow mask 16 that aligns the substrate 6 of one or more of the grids 28 with one or more of the grids 30 with the mask alignment system 15' will now be described.
開始時,基板6移入與陰影遮罩16隔開粗略地(或大致)對準。當基板6與陰影遮罩16粗略對準時,基板6的每個格柵28與陰影遮罩16的每個格柵30位在一對光源24-光接受器26的光路36’中。例如,若是遮罩對準系統15’包括各自界定四條光路36A’、36B’、36C’及36D’(也圖示於圖7)的四對光源-光接受器24A-26A、24B-26B、24C-26C及24D-26D(示意圖示於圖7),以及基板6包括格柵28A、28B、28C及28D,以及陰影遮罩16包括格柵30A、30B、30C及30D:格柵28A及30A位在從光源24A經由分束器60A延伸至光接受器26A的光路36A’中;格柵28B及30B位在從光源24B經由分束器60B延伸至光接受器26B的光路36B’中;格柵26C及30C位在從光源24C經由分束器60C延伸至光接受器26C的光路36C’中;以及格柵28D及30D位在從光源24D經由分束器60D延伸至光接受器26D的光路36D’。 Initially, the substrate 6 is moved into a roughly (or substantially) aligned relationship with the shadow mask 16. When the substrate 6 is roughly aligned with the shadow mask 16, each of the grids 28 of the substrate 6 and each of the grids 30 of the shadow mask 16 are positioned in the optical path 36' of the pair of light sources 24-photoreceptors 26. For example, if the mask alignment system 15' includes four pairs of light source-light receptors 24A-26A, 24B-26B that each define four optical paths 36A', 36B', 36C', and 36D' (also shown in FIG. 7), 24C-26C and 24D-26D (schematically shown in Figure 7), and substrate 6 includes grids 28A, 28B, 28C, and 28D, and shadow mask 16 includes grids 30A, 30B, 30C, and 30D: grid 28A and The 30A position is in the optical path 36A' extending from the light source 24A via the beam splitter 60A to the light receptor 26A; the grids 28B and 30B are located in the optical path 36B' extending from the light source 24B via the beam splitter 60B to the light receptor 26B; The grids 26C and 30C are located in the optical path 36C' extending from the light source 24C via the beam splitter 60C to the light receptor 26C; and the grids 28D and 30D are located from the light source 24D via the beam splitter 60D to the light receptor 26D. Light path 36D'.
圖7的俯視圖圖示與陰影遮罩16粗略對準的基板6,其中圖示光源24A至24D、光接受器26A至26D(以虛線圖示)、分 束器60A至60D(以虛線圖示),以及各自用於各對光源-光接收器的光路36A’-36D’。在圖7中,應瞭解,格柵28A及30A位在光路36A’中;格柵28B及30B位在光路36B’中;格柵26C及30C位在光路36C’中;以及格柵28D及30D位在光路36D’中。 The top view of Figure 7 illustrates a substrate 6 that is roughly aligned with the shadow mask 16, wherein the light sources 24A through 24D, the light receptors 26A through 26D (shown in dashed lines), Beams 60A through 60D (shown in phantom), and optical paths 36A'-36D' for respective pairs of light source-light receivers. In FIG. 7, it should be understood that the grids 28A and 30A are located in the optical path 36A'; the grids 28B and 30B are located in the optical path 36B'; the grids 26C and 30C are located in the optical path 36C'; and the grids 28D and 30D Located in the optical path 36D'.
請參考圖8,此時描述基板6之一格柵28與陰影遮罩16之一格柵30(亦即,一對格柵28-30)沿著一光路36’的精細對準。不過,應瞭解,格柵對28-30沿著圖8之光路36’的精細對準也可應用於位在其他各條光路36中之其他各對格柵28-30的對準。 Referring to Figure 8, a fine alignment of one of the grids 28 of the substrate 6 with one of the grids 30 of the shadow mask 16 (i.e., a pair of grids 28-30) along an optical path 36' is now described. However, it should be understood that the fine alignment of the grid pairs 28-30 along the optical path 36' of Figure 8 can also be applied to the alignment of the other pairs of grids 28-30 located in each of the other optical paths 36.
以處於隔開關係的陰影遮罩16與基板6開始,在適當的時間,激活每個光源24以沿著它的光路36’輸出光線。在一非限定的具體實施例中,每個光源包含輸出光線至準直光學元件/透鏡40的LED 38,準直光學元件/透鏡40係準直由LED 38輸出的光線以及輸出該準直光至至少將由準直光學元件/透鏡40輸出之準直光部份反射至一格柵對28-30的分束器60。 Starting with a shadow mask 16 in spaced relationship with the substrate 6, each light source 24 is activated to output light along its optical path 36' at the appropriate time. In a non-limiting embodiment, each light source includes an LED 38 that outputs light to a collimating optic/lens 40 that collimates light output by LED 38 and outputs the collimated light At least the collimated light portion output by the collimating optics/lens 40 is reflected to the beam splitter 60 of a grid pair 28-30.
如上述,陰影遮罩16的每個格柵30包括多個隔開條桿46,最好是隔開的平行條桿。每對隔開條桿46有間隙48。最好每個間隙48的寬度相同。同樣,基板6的每個格柵28包括多個隔開條桿42,最好是隔開的平行條桿。每對隔開條桿42有間隙44。最好每個間隙44的寬度相同。再者,最好每個間隙44及每個間隙48的寬度也相同。不過,格柵28、格柵30或格柵28與30有相同的間隙44、48不應被視為是要限定本發明。 As noted above, each of the grids 30 of the shadow mask 16 includes a plurality of spaced apart bars 46, preferably spaced apart parallel bars. Each pair of spaced apart bars 46 has a gap 48. Preferably, each gap 48 has the same width. Likewise, each of the grids 28 of the substrate 6 includes a plurality of spaced apart bars 42, preferably spaced apart parallel bars. Each pair of spaced apart bars 42 has a gap 44. Preferably, each gap 44 has the same width. Again, it is preferred that the width of each gap 44 and each gap 48 be the same. However, the same gaps 44, 48 of the grid 28, grid 30 or grids 28 and 30 should not be considered as limiting the invention.
來自分束器60穿經格柵30間隙48及格柵28間隙44的準直光對於被格柵28之隔開條桿42反射的光線沒有幫助。不 過,格柵28之隔開條桿42所反射的準直光返回穿經格柵30的間隙48以及向分束器60傳播。在分束器60處,反射光至少有一部份穿經分束器60以便被光接受器26接收。 The collimated light from the beam splitter 60 through the gaps 48 of the grid 30 and the gaps 44 of the grid 28 does not contribute to the light reflected by the spaced bars 42 of the grid 28. Do not The collimated light reflected by the spaced bars 42 of the grid 28 returns to the gap 48 that passes through the grid 30 and propagates toward the beam splitter 60. At beam splitter 60, at least a portion of the reflected light passes through beam splitter 60 for receipt by photoreceptor 26.
光接受器26的聚焦光學元件/透鏡50聚集反射光中穿經分束器60朝向形式為PIN二極體52之光檢測構件的部份。提供遮罩對準系統15’的各個光接受器26的各個PIN二極體52的輸出給控制器22(圖示於圖6)的類比至數位(A/D)轉換器54,其係將各個PIN二極體52的類比輸出轉換成對應數位訊號以便被控制器22的處理構件處理。各個PIN二極體52的輸出對應該PIN二極體52所收到的光量。 The focusing optics/lens 50 of the light receiver 26 concentrates the portion of the reflected light that passes through the beam splitter 60 toward the light detecting member in the form of a PIN diode 52. The output of each PIN diode 52 of each of the light receptors 26 of the mask alignment system 15' is provided to an analog to digital (A/D) converter 54 of the controller 22 (shown in Figure 6), which will The analog output of each PIN diode 52 is converted to a corresponding digital signal for processing by the processing component of controller 22. The output of each PIN diode 52 corresponds to the amount of light received by the PIN diode 52.
在適當的時間,控制器22經由Y-θ平台20A及/或X-Z平台20B開始基板6、陰影遮罩16或兩者的精細定位,以使基板6與陰影遮罩16相互對準,使得對於每條光路36’,格柵28的一些條桿42與格柵30的一些間隙48有所欲程度的重疊(在橫向,最好垂直於光路36’),反之,格柵30的條桿46至少有一些與格柵28的間隙44有所欲程度的重疊(在橫向,最好垂直於光路36’)。最好,陰影遮罩16的每個間隙48與基板6的條桿42部份重疊,以及基板6的每個間隙44與陰影遮罩16的條桿46部份重疊,如圖8所示。條桿42及46與間隙48及44的寬度部份重疊有所欲百分比更好,例如50%。換言之,間隙48及44各自有50%的寬度與條桿42及46重疊。 At the appropriate time, controller 22 initiates fine positioning of substrate 6, shadow mask 16 or both via Y-theta platform 20A and/or XZ platform 20B to align substrate 6 with shadow mask 16 such that Each of the optical paths 36', some of the bars 42 of the grid 28 overlap with some of the gaps 48 of the grid 30 (in the lateral direction, preferably perpendicular to the optical path 36'), and conversely, the bars 46 of the grid 30 At least some of the overlap with the gap 44 of the grid 28 is (in the lateral direction, preferably perpendicular to the optical path 36'). Preferably, each gap 48 of the shadow mask 16 partially overlaps the bar 42 of the substrate 6, and each gap 44 of the substrate 6 partially overlaps the bar 46 of the shadow mask 16, as shown in FIG. The bars 42 and 46 partially overlap the widths of the gaps 48 and 44 by a desired percentage, such as 50%. In other words, the gaps 48 and 44 each have a width of 50% overlapping the bars 42 and 46.
對於光路36’中之一條關連的每對格柵28-30,控制器22檢測條桿42何時與間隙48有所欲程度的重疊,其係藉由比較PIN二極體52在該光路36’上的數位輸出與一預定值或一預定值 範圍,其中該數位輸出係經由A/D 54得到以及該數位輸出對應至反射自條桿42穿經間隙48的光線。 For each pair of grids 28-30 associated with one of the optical paths 36', the controller 22 detects when the bar 42 overlaps the gap 48 to a desired extent by comparing the PIN diode 52 to the optical path 36'. Digital output on a predetermined value or a predetermined value The range, wherein the digital output is obtained via A/D 54 and the digital output corresponds to light reflected from the bar 42 through the gap 48.
在檢測PIN二極體52之數位輸出不等於預定值或不在預定值範圍內時,控制器22造成一或更多移動平台20A及/或20B按需要調整基板6、陰影遮罩16或兩者的X、Y及/或θ位置直到控制器22經由PIN二極體52的數位輸出檢測到條桿42與格柵對28-30的間隙48有所欲重疊數量。由於條桿42與格柵對28-30之間隙48的重疊數量影響準直光到達PIN二極體52的數量,藉由比較PIN二極體52之數位輸出與預定值或預定值範圍,控制器22可確定何時條桿42與和光路36’關連之格柵對28-30的間隙48已實現適當的重疊數量。用類似方式,控制器22可確定何時條桿42與和其他各個光路36’關連之其他各對格柵28-30的間隙48已實現適當的重疊數量。 When detecting that the digital output of the PIN diode 52 is not equal to or within a predetermined value range, the controller 22 causes the one or more moving platforms 20A and/or 20B to adjust the substrate 6, the shadow mask 16, or both as needed. The X, Y, and/or θ positions until the controller 22 detects the gap 48 of the bar 42 and the pair of grilles 28-30 via the digital output of the PIN diode 52. Since the amount of overlap of the bar 42 and the gap 48 of the grid pair 28-30 affects the amount of collimated light reaching the PIN diode 52, by comparing the digital output of the PIN diode 52 with a predetermined value or a predetermined range of values, control The device 22 can determine when the bar 42 and the gap 48 of the pair of grilles 28-30 associated with the optical path 36' have achieved an appropriate amount of overlap. In a similar manner, controller 22 can determine when the bar 42 and the gaps 48 of the other pairs of grids 28-30 associated with the other respective optical paths 36' have achieved an appropriate amount of overlap.
在一非限定具體實施例中,控制器22最好組合光接受器26A至26D之所有PIN二極體52的輸出以確定何時基板6與陰影遮罩16已實現適當的X、Y及θ對準。更具體言之,假定控制器調整基板6、陰影遮罩16或兩者的方位/位置。在某一段時間後,控制器停止調整基板6、陰影遮罩16或兩者的方位/位置,以及調整A/D 54取樣及數位化光接受器26A至26D之PIN二極體52A至52D(圖示於圖7)的輸出。控制器22使PIN二極體52A至52D的數位輸出在控制器22記憶體中與變數f1-f4關連以及組合基板6、陰影遮罩16或兩者之X、Y及旋轉或角度(θ)位移的變數,如下:‧(方程式1)X位移=f1-f2-f3+f4 ‧(方程式2)Y位移=f1+f2-f3-f4;以及‧(方程式3)θ位移=f1-f2+f3-f4。上述方程式1至3為前文在說明第一具體實施例遮罩對準系統15時提及之方程式1至3的副本。 In a non-limiting embodiment, controller 22 preferably combines the outputs of all of PIN diodes 52 of light receptors 26A through 26D to determine when substrate 6 and shadow mask 16 have achieved the appropriate X, Y, and θ pairs. quasi. More specifically, it is assumed that the controller adjusts the orientation/position of the substrate 6, the shadow mask 16, or both. After a certain period of time, the controller stops adjusting the orientation/position of the substrate 6, the shadow mask 16 or both, and adjusts the PIN diodes 52A to 52D of the A/D 54 sampling and digitizing light receivers 26A to 26D ( The output shown in Figure 7). The controller 22 causes the digital outputs of the PIN diodes 52A to 52D to be associated with the variables f1-f4 in the memory of the controller 22 and the X, Y and rotation or angle (θ) of the combined substrate 6, shadow mask 16, or both. The variation of the displacement is as follows: ‧ (Equation 1) X displacement = f1-f2-f3 + f4 ‧ (Equation 2) Y displacement = f1 + f2 - f3 - f4; and ‧ (Equation 3) θ displacement = f1 - f2 + f3 - f4. Equations 1 through 3 above are copies of Equations 1 through 3 mentioned above when describing the mask alignment system 15 of the first embodiment.
在控制器22判斷上述方程式1至3所確定的X、Y及θ位移各自等於零時,控制器22認為此狀態對應至有所欲對準的基板6與陰影遮罩16。另一方面,如果X位移、Y位移或θ位移中之任一不等於零,控制器22認為此狀態對應至沒有所欲對準的基板6與陰影遮罩16,然後控制器22造成一或更多移動平台20A至20B按需要調整基板6、陰影遮罩16或兩者的X、Y及/或θ位置以造成上述方程式1至3所確定的X位移、Y位移或θ位移各自等於零。 When the controller 22 determines that the X, Y, and θ displacements determined by the above Equations 1 through 3 are each equal to zero, the controller 22 considers this state to correspond to the substrate 6 and the shadow mask 16 to be aligned. On the other hand, if any of the X displacement, the Y displacement, or the θ displacement is not equal to zero, the controller 22 considers this state to correspond to the substrate 6 and the shadow mask 16 that are not to be aligned, and then the controller 22 causes one or more The multiple moving platforms 20A-20B adjust the X, Y, and/or θ positions of the substrate 6, shadow mask 16, or both as needed to cause the X, Y, or θ displacements determined by Equations 1 through 3 above to be equal to zero, respectively.
控制器22最好重覆下列步驟:調整基板6、陰影遮罩16或兩者的方位/位置;停止基板6、陰影遮罩16或兩者之方位/位置的調整;取樣及數位化PIN二極體52A至52D的輸出;以及判斷上述方程式1至3所確定的X位移、Y位移或θ位移是否各自等於零直到上述方程式1至3所確定的X、Y及θ位移實際各自等於零;或直到該等步驟已進行預定的重覆次數;或直到已消逝預定的時間數量。 The controller 22 preferably repeats the steps of: adjusting the orientation/position of the substrate 6, the shadow mask 16, or both; stopping the orientation of the substrate 6, the shadow mask 16, or both; sampling and digitizing the PIN II The outputs of the pole bodies 52A to 52D; and determining whether the X displacement, the Y displacement, or the θ displacement determined by the above Equations 1 to 3 are each equal to zero until the X, Y, and θ displacements determined by the above Equations 1 to 3 are each actually equal to zero; or until The steps have been performed a predetermined number of repetitions; or until a predetermined amount of time has elapsed.
在確定X、Y及θ位移各自等於零時,控制器22造成運動平台20B在Z方向移動以使基板6與陰影遮罩16從圖示於圖8處於隔開關係的位置移動變成密切接觸,該隔開關係係用來對準基板6與陰影遮罩16。 When it is determined that the X, Y, and θ displacements are each equal to zero, the controller 22 causes the motion platform 20B to move in the Z direction to cause the substrate 6 to move into close contact with the shadow mask 16 from the position illustrated in FIG. 8 in a spaced relationship, which The separation relationship is used to align the substrate 6 with the shadow mask 16.
X、Y及θ位移利用方程式1至3以上述方式判斷是否 各自等於零不應被視為是要限定本發明,因為這是設想,各個位移可在對於該位移是獨一或對於該等位移是共同的適當數值範圍內。例如但不受限於,控制器22可經編程為落在±1範圍內的X位移是可接受的,落在±1.5範圍內的Y位移是可接受的,以及落在±0.5範圍內的θ位移是可接受的。替換地,控制器22可經編程為每個位移可使用相同的數值範圍。例如,控制器22可經編程為它可接受落在±1範圍內的X、Y及θ位移中之每一者。 X, Y, and θ displacements are determined in the above manner using Equations 1 through 3 The respective equals to zero should not be considered as limiting the invention, as it is contemplated that the various displacements may be within a suitable numerical range that is unique to the displacement or common to the displacements. For example and without limitation, the controller 22 can be programmed to have an X displacement that is within a range of ±1 acceptable, a Y displacement that falls within a range of ±1.5, and fall within a range of ±0.5. The θ displacement is acceptable. Alternatively, controller 22 can be programmed to use the same range of values for each displacement. For example, controller 22 can be programmed such that it can accept each of the X, Y, and θ displacements that fall within the range of ±1.
可見,利用光接受器26A至26D之PIN二極體52A至52D的輸出,控制器22可使基板6與陰影遮罩16以高度準確地處於所欲對準狀態。為此目的,控制器22可累進式改變基板6、陰影遮罩16或兩者的方位/位置,直到基板6的格柵28與陰影遮罩16的格柵30有所欲程度的對準。在控制器22判斷基板6與陰影遮罩16需要進一步對準的情形下,由用上述方程式1-3決定的X、Y及θ位移值,控制器22可視實際需要做出明智的決定讓基板6、陰影遮罩16或兩者在X、Y及θ方向往那個方向移動或旋轉以改善基板6與陰影遮罩16的對準。因此,控制器22可定向/定位基板6、陰影遮罩16或兩者於第一位置,然後取得光接收器26A-26D之PIN二極體52A-52D的輸出以判斷基板6與陰影遮罩16是否適當地對準。若成立,控制器22造成基板6與陰影遮罩16在Z方向進入密切接觸以準備發生於沉積真空容器4的沉積事件。不過,如果判斷基板6與陰影遮罩16沒有適當地對準,控制器22可累進式改變基板6、陰影遮罩16或兩者的方向/位置至其他位置,在此控制器22取樣光接收器26A-26D之PIN二極體52A-52D的輸出。可繼續取樣光接收器26A-26D之PIN二極體52A-52D的輸出以及累 進式改變基板6、陰影遮罩16或兩者的方向/位置的處理直到控制器22用控制器22的程式確定基板6與陰影遮罩16有所欲程度的對準。 It can be seen that with the outputs of the PIN diodes 52A to 52D of the photoreceptors 26A to 26D, the controller 22 can cause the substrate 6 and the shadow mask 16 to be highly accurately aligned. To this end, the controller 22 can progressively change the orientation/position of the substrate 6, shadow mask 16, or both until the grid 28 of the substrate 6 is in a desired degree of alignment with the grid 30 of the shadow mask 16. In the case where the controller 22 determines that the substrate 6 and the shadow mask 16 need further alignment, the controller 22 can make an sensible decision on the substrate by the X, Y, and θ displacement values determined by Equations 1-3 above. 6. The shadow mask 16 or both are moved or rotated in that direction in the X, Y, and θ directions to improve alignment of the substrate 6 with the shadow mask 16. Therefore, the controller 22 can orient/position the substrate 6, the shadow mask 16 or both in the first position, and then take the output of the PIN diodes 52A-52D of the light receivers 26A-26D to determine the substrate 6 and the shadow mask. 16 is properly aligned. If so, the controller 22 causes the substrate 6 to enter in close contact with the shadow mask 16 in the Z direction to prepare for deposition events that occur in the deposition vacuum vessel 4. However, if it is determined that the substrate 6 and the shadow mask 16 are not properly aligned, the controller 22 may progressively change the direction/position of the substrate 6, the shadow mask 16, or both to other locations, where the controller 22 samples the light reception. The outputs of the PIN diodes 52A-52D of the devices 26A-26D. Continue to sample the output of the PIN diodes 52A-52D of the optical receivers 26A-26D and the tired The process of changing the orientation/position of the substrate 6, the shadow mask 16, or both is advanced until the controller 22 determines the degree of alignment of the substrate 6 with the shadow mask 16 by the program of the controller 22.
可見,控制器22造成基板6、陰影遮罩16或兩者的方位被調整成可定位基板6的格柵28與陰影遮罩16的格柵30或兩者,直到每條光路36’上有預定數量的反射光穿經對應分束器60以便被對應光接收器26接收。換言之,控制器精細定位基板6、陰影遮罩16或兩者,直到被各個格柵28之條桿42的光線有預定數量穿經各個格柵30的間隙48及分束器60以便被對應光接受器26接收。 It can be seen that the controller 22 causes the orientation of the substrate 6, the shadow mask 16 or both to be adjusted to position the grid 28 of the substrate 6 and the grid 30 of the shadow mask 16 or both until each light path 36' has A predetermined amount of reflected light passes through the corresponding beam splitter 60 for reception by the corresponding light receiver 26. In other words, the controller finely positions the substrate 6, the shadow mask 16 or both until the light rays of the bars 42 of the respective grids 28 have a predetermined number of passes through the gaps 48 of the respective grids 30 and the beam splitter 60 to be correspondingly illuminated. Receiver 26 receives.
如圖8所示,在遮罩對準系統15’中,光源24A至24D各自與光接受器26A至26D一樣位於陰影遮罩16的同一側。用作為光束組合器(beam combiner)的分束器60(圖示成45度的小面)光學組合每對光源24-光接受器26。 As shown in Fig. 8, in the mask alignment system 15', the light sources 24A to 24D are each located on the same side of the shadow mask 16 as the light receivers 26A to 26D. Each pair of light sources 24-photoreceptor 26 is optically combined using a beam splitter 60 (shown as a 45 degree facet) as a beam combiner.
每個光接受器26經定位成其光軸垂直於陰影遮罩16及基板6而且位於陰影遮罩16中與基板6相反的側面。不過,這不應被視為是要限定本發明。 Each of the light receptors 26 is positioned such that its optical axis is perpendicular to the shadow mask 16 and the substrate 6 and is located on the opposite side of the shadow mask 16 from the substrate 6. However, this should not be construed as limiting the invention.
在圖示於圖8的配置中,來自分束器60的光線穿經陰影遮罩16的間隙48,以及至少被基板6的條桿42部份反射,而來自分束器60的其餘光線穿經基板6的間隙44。被基板6之條桿42反射的光線再度穿經陰影遮罩16的間隙48,然後至少部份通過分束器60以便被光接受器26接收。 In the configuration illustrated in Figure 8, light from the beam splitter 60 passes through the gap 48 of the shadow mask 16, and is at least partially reflected by the bar 42 of the substrate 6, while the remaining light from the beam splitter 60 is worn. Through the gap 44 of the substrate 6. The light reflected by the bar 42 of the substrate 6 passes through the gap 48 of the shadow mask 16 and then at least partially passes through the beam splitter 60 for reception by the light receptor 26.
包括準直光學元件/透鏡40的光源24經定位成對於包含聚焦光學元件/透鏡50的光接受器26呈橫向,最好呈垂直。分 束器60放在光源24及光接受器26之光軸的交點,以及分束器60的平面經定向成可直角平分光源24及光接受器26的軸線。以此方式,來自光源24的準直光被90度反射,然後反射光第一次傳播通過陰影遮罩16的間隙48以打到基板6格柵28之條桿42的朝下表面以及至少被該等朝下表面部份反射。被格柵28之條桿42反射的光線第二次穿經陰影遮罩16的間隙48,然後部份穿過分束器60以便被光接受器26的PIN二極體52接收。因此,光接受器26之PIN二極體52所收到的光量和陰影遮罩16之格柵30的間隙48與基板6之格柵28的條桿42的重疊程度成正比。因此,遮罩對準15’以反射模式進行對準感測。這與以射模式進行對準感測的上述遮罩對準系統15成對比。 Light source 24, including collimating optics/lens 40, is positioned transverse to, preferably perpendicular, to photoreceptor 26 comprising focusing optics/lens 50. Minute The beamer 60 is placed at the intersection of the optical axes of the light source 24 and the light receptor 26, and the plane of the beam splitter 60 is oriented to bisect the axis of the light source 24 and the light receptor 26 at right angles. In this manner, the collimated light from source 24 is reflected at 90 degrees, and then the reflected light propagates through the gap 48 of shadow mask 16 for the first time to strike the downward facing surface of bar 42 of substrate 6 grid 28 and at least These downward facing surfaces are partially reflected. The light reflected by the bar 42 of the grid 28 passes through the gap 48 of the shadow mask 16 for a second time and then partially passes through the beam splitter 60 for receipt by the PIN diode 52 of the photoreceptor 26. Therefore, the amount of light received by the PIN diode 52 of the photoreceptor 26 and the gap 48 of the grid 30 of the shadow mask 16 are proportional to the degree of overlap of the bars 42 of the grid 28 of the substrate 6. Therefore, the mask alignment 15' performs alignment sensing in the reflective mode. This is in contrast to the above-described mask alignment system 15 which performs alignment sensing in the shot mode.
熟諳此藝者應瞭解,有些光量被丟掉,因為由於分束器60的部份反射及部份透射而使用部份光線。不難了解,使用準直光學元件/透鏡40以及分束器60為極化分束器可說明分束器60的無效率。 Those skilled in the art should understand that some of the amount of light is lost because some of the light is used due to partial reflection and partial transmission of the beam splitter 60. It is not difficult to understand that the use of the collimating optics/lens 40 and the beam splitter 60 as a polarizing beam splitter can illustrate the inefficiency of the beam splitter 60.
在遮罩對準系統15’的上述具體實施例中,每一對光源24-光接受器26與每個對應分束器60位於陰影遮罩16中與基板6相反的側面。不過,這不應被視為是要限定本發明,因為這是設想,該對光源24-光接受器26中之一、或更多或所有和各個對應分束器60可位於基板6中與陰影遮罩16相反的側面,亦即,在基板6的另一面上。在此具體實施例中,來自各個分束器60的光線會首先穿經基板6的間隙44以便被陰影遮罩16的條桿46反射,然後反射光會再度穿經基板6的間隙44以便隨後穿經分束器60以便被光接受器26接收。 In the above-described embodiment of the mask alignment system 15', each pair of light sources 24-photoreceptor 26 and each corresponding beam splitter 60 are located on the opposite side of the shadow mask 16 from the substrate 6. However, this should not be seen as limiting the invention, as it is contemplated that one, or more or all of the pair of light sources 24-photoreceptors 26, and each of the corresponding beam splitters 60, may be located in the substrate 6 and The opposite side of the shadow mask 16 is, that is, on the other side of the substrate 6. In this particular embodiment, light from each beam splitter 60 will first pass through the gap 44 of the substrate 6 to be reflected by the bar 46 of the shadow mask 16, and then the reflected light will again pass through the gap 44 of the substrate 6 for subsequent The beam splitter 60 is passed through to be received by the light receptor 26.
已用數個示範具體實施例來描述本發明。顯然閱讀以上詳細說明後可想出修改及變更。希望本發明被解釋成可涵蓋只要落入隨附申請專利範圍或其等價陳述之範疇內的所有修改及變更。 The invention has been described in terms of several exemplary embodiments. Obviously, you can think of modifications and changes after reading the above detailed description. It is intended that the present invention be construed as covering all such modifications and modifications as fall within the scope of the appended claims.
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| US13/973,328 US9122172B2 (en) | 2010-06-04 | 2013-08-22 | Reflection shadow mask alignment using coded apertures |
| US13/973,328 | 2013-08-22 |
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| US9939605B2 (en) | 2015-08-06 | 2018-04-10 | Qualcomm Incorporated | Submicron wafer alignment |
| WO2018119735A1 (en) * | 2016-12-28 | 2018-07-05 | 深圳市柔宇科技有限公司 | Evaporator alignment system and method for selecting evaporator alignment system |
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- 2014-08-22 WO PCT/US2014/052211 patent/WO2015027123A1/en not_active Ceased
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| US6661951B1 (en) * | 2001-03-12 | 2003-12-09 | Thomas H. Blair | Optoelectric alignment apparatus |
| US20060086321A1 (en) * | 2004-10-22 | 2006-04-27 | Advantech Global, Ltd | Substrate-to-mask alignment and securing system with temperature control for use in an automated shadow mask vacuum deposition process |
| US20070246706A1 (en) * | 2005-06-08 | 2007-10-25 | Advantech Global, Ltd | Electronic circuit with repetitive patterns formed by shadow mask vapor deposition and a method of manufacturing an electronic circuit element |
| TW201231692A (en) * | 2010-06-04 | 2012-08-01 | Advantech Global Ltd | Shadow mask alignment using coded apertures |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105659402A (en) | 2016-06-08 |
| CN105659402B (en) | 2019-01-18 |
| KR20160050032A (en) | 2016-05-10 |
| WO2015027123A1 (en) | 2015-02-26 |
| TW201520703A (en) | 2015-06-01 |
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