TW201704506A - Shadow mask alignment technique using variable pitch coding aperture - Google Patents
Shadow mask alignment technique using variable pitch coding aperture Download PDFInfo
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- TW201704506A TW201704506A TW105104805A TW105104805A TW201704506A TW 201704506 A TW201704506 A TW 201704506A TW 105104805 A TW105104805 A TW 105104805A TW 105104805 A TW105104805 A TW 105104805A TW 201704506 A TW201704506 A TW 201704506A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- H10P72/57—
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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Abstract
Description
本申請案為申請於2013年8月22日之美國專利申請案第13/973,328號的部份延續申請案,其係申請於2013年1月14日之美國專利申請案第13/695.488號的部份延續申請案,其係申請於2011年5月23日之國際申請案第PCT/US2011/037501號的美國國家階段,其係主張申請於2010年6月4日之美國臨時申請案第61/351,470號的權益。以上文獻的揭示內容全部併入本文作為參考資料。 This application is a continuation-in-part of U.S. Patent Application Serial No. 13/973,328, filed on Aug. Part of the continuation application, which is applied to the US National Phase of International Application No. PCT/US2011/037501 on May 23, 2011, which claims to apply for the US Provisional Application No. 61 on June 4, 2010. /351,470. The disclosures of the above documents are hereby incorporated by reference in its entirety.
本發明係有關於與氣相沉積系統沉積材料於基板上有關的陰影遮罩與基板之準確對準。 The present invention relates to accurate alignment of a shadow mask to a substrate associated with a deposition material of a vapor deposition system on a substrate.
氣相沉積系統準確對準陰影遮罩與基板對於一或更多材料在基板的準確沉積至關重要。可惜,大部份的氣相沉積系統,包括封閉式真空沉積容器,其中發生一或更多次氣相沉積事件以及難以人工高度準確地對準陰影遮罩至基板。此外,目前用於對準陰影遮罩至基板的自動及半自動系統沒有必要的對準準確度以在氣相沉積材料於基 板上時提供想要的準確度,特別是在用多個不同的陰影遮罩使基板經受多次氣相沉積事件時。 The accurate alignment of the vapor deposition system with the shadow mask and substrate is critical for accurate deposition of one or more materials on the substrate. Unfortunately, most vapor deposition systems include closed vacuum deposition vessels in which one or more vapor deposition events occur and it is difficult to manually and accurately align the shadow mask to the substrate. In addition, the automatic and semi-automated systems currently used to align shadow masks to substrates do not have the necessary alignment accuracy to deposit materials in the vapor phase. The desired accuracy is provided on the board, particularly when the substrate is subjected to multiple vapor deposition events with a plurality of different shadow masks.
因此,提供一種對準陰影遮罩-基板的對準方法及系統使得一或更多材料經由一或更多陰影遮罩能以高度準確及可重複的方式氣相沉積於基板上是合乎需要的。 Accordingly, it would be desirable to provide an alignment method and system for aligning a shadow mask-substrate such that one or more materials can be vapor deposited onto the substrate in a highly accurate and repeatable manner via one or more shadow masks. .
此時描述及闡明本發明的各種較佳及非限定實施例於下列編號條項: Various preferred and non-limiting embodiments of the invention are described and illustrated in the following numbered items:
條項1:一種陰影遮罩-基板對準方法,其係包含下列步驟:(a)提供一基板,該基板包括有處於隔開關係之多個條桿的一格柵,其中該基板之該格柵的每對隔開條桿以一間隙分隔,其中該基板之該格柵包括至少三個間隙,其中每對相鄰間隙之間的間隔不同或沒有不變節距;(b)提供一陰影遮罩,該陰影遮罩包括有處於隔開關係之多個條桿的一格柵,其中該陰影遮罩之該格柵的每對隔開條桿以穿過該陰影遮罩的一間隙分隔,其中該陰影遮罩之該格柵包括至少三個間隙,其中每對相鄰間隙之間的間隔不同或沒有不變節距;(c)提供一對準直光源-光接收器,其中該對光接收器定位在由該對準直光源輸出之準直光的一路徑中;(d)使該基板的該格柵與該陰影遮罩的該格柵定位在該準直光之該路徑中;以及(e)在步驟(d)之後,使該基板、該陰影遮罩或兩者的方位被調整,以定位該基板之該格柵、該陰影遮罩之該格柵或兩者,直到在該路徑上有一預定數量之準直光穿過該基板之該格柵中的該等間隙以及該陰影 遮罩之該格柵的該等間隙,且被該光接收器接收。 Clause 1: A shadow mask-substrate alignment method comprising the steps of: (a) providing a substrate comprising a grid having a plurality of bars in spaced relationship, wherein the substrate Each pair of spaced apart bars of the grid are separated by a gap, wherein the grid of the substrate comprises at least three gaps, wherein the spacing between each pair of adjacent gaps is different or not constant; (b) providing a shadow a mask comprising a grid having a plurality of bars in spaced relationship, wherein each pair of spaced bars of the grid of the shadow mask are separated by a gap through the shadow mask Wherein the grid of the shadow mask comprises at least three gaps, wherein the spacing between each pair of adjacent gaps is different or not constant; (c) providing an aligned direct source-light receiver, wherein the pair The light receiver is positioned in a path of the collimated light output by the aligned direct light source; (d) positioning the grid of the substrate and the grid of the shadow mask in the path of the collimated light And (e) after step (d), the orientation of the substrate, the shadow mask, or both is adjusted To locate the grating of the substrate, the shadow mask of the grid, or both, until a predetermined number of registration in the path of the collimated light that passes through the gap in the grating of the substrate and the shadow The gaps of the grid of the mask are received by the light receiver.
條項2:如條項1所述的方法,其中:該基板之該格柵可包括至少四個間隙;以及該陰影遮罩之該格柵可包括至少四個間隙。 Clause 2: The method of clause 1, wherein: the grid of the substrate can comprise at least four gaps; and the grid of the shadow mask can comprise at least four gaps.
條項3:如條項1或2所述的方法,其中:每個間隙可具有相同的寬度;及/或每個條桿可具有不同的寬度。 Clause 3: The method of clause 1 or 2, wherein: each gap may have the same width; and/or each bar may have a different width.
條項4:如條項1-3中之任一所述的方法,其中每對相鄰間隙之間的間隔可根據下列項目中之一者而變動:一巴可碼(Barker code)、一線性調頻序列(linear chirp sequence)、一指數調頻序列、一最大長度序列、或一虛擬亂數序列。 The method of any one of clauses 1 to 3, wherein the interval between each pair of adjacent gaps is variable according to one of the following items: Barker code, a line A linear chirp sequence, an exponential frequency sequence, a maximum length sequence, or a virtual random number sequence.
條項5:如條項1-4中之任一所述的方法,其中:步驟(e)可包括:使該基板、該陰影遮罩或兩者的方位被調整,以將該基板之該格柵之該等條桿的長軸定位成平行於該陰影遮罩之該格柵之該等條桿的長軸,且將該基板及該陰影遮罩之該等格柵的該等條桿定位成各自與該陰影遮罩及該基板之該等格柵的該等間隙部份重疊。 The method of any one of clauses 1 to 4, wherein the step (e) comprises: adjusting an orientation of the substrate, the shadow mask, or both to the substrate The long axes of the bars of the grid are positioned parallel to the long axis of the bars of the grid of the shadow mask, and the substrate and the bars of the grid of the shadow mask are Positioned so as to partially overlap the gaps of the shadow mask and the grids of the substrate.
條項6:如條項1-5中之任一所述的方法,其中該基板及該陰影遮罩之該等格柵的該等條桿可各自與該陰影遮罩及該基板之該等格柵的該等間隙有50%的部份重疊。 The method of any one of clauses 1 to 5, wherein the substrate and the bars of the grid of the shadow mask are respectively associated with the shadow mask and the substrate The gaps of the grid have a 50% partial overlap.
條項7:如條項1-6中之任一所述的方法,其中:該準直光源可包含一LED以及可操作用以使該LED輸出之光線準直的一準直透鏡;以及該光接收器可包含一PIN二極體以及可操作用以將藉此接收之光線聚焦於該PIN二極體 上的一聚焦透鏡。 The method of any one of clauses 1 to 6, wherein the collimating light source comprises an LED and a collimating lens operable to collimate light output by the LED; The light receiver can include a PIN diode and is operable to focus the light received thereby to the PIN diode A focusing lens on the top.
條項8:如條項1-7中之任一所述的方法,其中:該基板與該陰影遮罩可各包括多個格柵;步驟(c)可包括:提供多對準直光源-光接收器,其中各該對的該光接收器定位在由該對之該準直光源輸出之準直光的一路徑中;步驟(d)可包括:將該基板的一格柵與該陰影遮罩的一格柵定位於準直光的各個路徑中;以及步驟(e)可包括:使該基板、該陰影遮罩或兩者的方位被調整,以定位該基板之該等格柵、該陰影遮罩之該等格柵或兩者,直到在各個路徑上有一預定數量之準直光穿過該路徑中的該等格柵,且被在該路徑中的該光接收器接收。 The method of any one of clauses 1-7, wherein: the substrate and the shadow mask each comprise a plurality of grids; the step (c) may comprise: providing a multi-aligned direct source - An optical receiver, wherein each of the pair of optical receivers is positioned in a path of collimated light output by the pair of collimated light sources; step (d) may comprise: a grid of the substrate and the shadow a grid of the mask is positioned in each path of the collimated light; and step (e) can include: adjusting an orientation of the substrate, the shadow mask, or both to position the grid of the substrate, The grid or both of the shadow masks until a predetermined amount of collimated light passes through the grids in the path on each path and is received by the light receiver in the path.
條項9:如條項1-8中之任一所述的方法,其中:各個光接收器可輸出具有與該光接收器所接收之光量相關之一位準的一訊號;以及步驟(e)可包括:調整該基板、該陰影遮罩或兩者的方位,直到由該等光接收器輸出之訊號位準的組合等於一預定值或落在一預定數值範圍內。 The method of any one of clauses 1-8, wherein: each of the optical receivers can output a signal having a level associated with the amount of light received by the optical receiver; and step (e) The method may include: adjusting the orientation of the substrate, the shadow mask, or both until the combination of signal levels output by the optical receivers is equal to a predetermined value or falls within a predetermined range of values.
條項10:如條項1-9中之任一所述的方法,其中該預定值可為零。 The method of any one of clauses 1-9, wherein the predetermined value is zero.
條項11:如條項1-10中之任一所述的方法,其中該基板與該陰影遮罩各可具有一矩形或方形形狀以及有一格柵鄰近該矩形或該方形的各個角落。 The method of any one of clauses 1 to 10, wherein the substrate and the shadow mask each have a rectangular or square shape and a grid is adjacent to the rectangle or each corner of the square.
條項12:如條項1-11中之任一所述的方法,其中每個條桿的縱軸可從對應之基板或陰影遮罩的中心軸徑向延伸±15度。 The method of any one of clauses 1-11, wherein the longitudinal axis of each bar extends radially from the central axis of the corresponding substrate or shadow mask by ±15 degrees.
條項13:一種陰影遮罩-基板對準方法,其係包含下列步驟:(a)將一準直光源、一分束器、包括一第一格柵的一基板、包括一第二格柵的一陰影遮罩、以及一光接收器相對於彼此定位來界定包括由該準直光源輸出且至少部份被該分束器反射之準直光的一光路,至少部份被反射之準直光穿過該第一格柵或該第二格柵中之一者,且被該第一格柵或該第二格柵中之另一者至少部份反射回通過該第一格柵或該第二格柵中之該一者,而被反射回通過該第一格柵或該第二格柵中之該一者的至少部份反射光,至少部份穿過該分束器以便由該光接收器接收;以及(b)使該基板、該陰影遮罩或兩者的方位被調整,以定位該第一格柵、該第二格柵、或該第一格柵及該第二格柵兩者,直到一預定數量被該光接收器接收,其中:每個格柵包括多個隔開條桿;每對隔開條桿以一間隙隔開;每個格柵包括至少三個間隙,其中每對相鄰間隙之間的間隔不同或沒有不變節距;以及該第一格柵及該第二格柵中之至少一者包括延伸穿過個別基板及陰影遮罩的至少一間隙。 Clause 13: A shadow mask-substrate alignment method comprising the steps of: (a) a collimating light source, a beam splitter, a substrate including a first grating, and a second grating a shadow mask, and a light receiver positioned relative to each other to define an optical path including collimated light output by the collimated light source and at least partially reflected by the beam splitter, at least partially reflected collimated Light passing through one of the first grid or the second grid and being at least partially reflected back through the first grid or the other of the first grid or the second grid The one of the second grids being reflected back through at least a portion of the reflected light of the one of the first grid or the second grid, at least partially passing through the beam splitter for Receiving, by the optical receiver; and (b) adjusting an orientation of the substrate, the shadow mask, or both to position the first grid, the second grid, or the first grid and the second grid Between the gates, until a predetermined number is received by the light receiver, wherein: each grid includes a plurality of spaced apart bars; each pair separates the bars into one Separating; each grid includes at least three gaps, wherein the spacing between each pair of adjacent gaps is different or not constant; and at least one of the first grid and the second grid includes an extension Passing at least one gap between the individual substrates and the shadow mask.
條項14:如條項13所述的方法,其中:該基板之該格柵可包括至少四個間隙;以及該陰影遮罩之該格柵可包括至少四個間隙。 Clause 14: The method of clause 13, wherein: the grid of the substrate can comprise at least four gaps; and the grid of the shadow mask can comprise at least four gaps.
條項15:如條項13或14所述的方法,其中:每個間隙可具有相同的寬度;及/或每個條桿可具有不同的寬度。 Clause 15: The method of clause 13 or 14, wherein: each gap may have the same width; and/or each bar may have a different width.
條項16:如條項13-15中之任一所述的方法,其 中每對相鄰間隙之間的間隔可根據下列項目中之一者而變動:一巴可碼、一線性調頻序列、一指數調頻序列、一最大長度序列、或一虛擬亂數序列。 Clause 16: The method of any one of clauses 13-15, wherein The spacing between each pair of adjacent gaps may vary according to one of the following: a bar code, a chirp sequence, an exponential frequency sequence, a maximum length sequence, or a virtual random number sequence.
條項17:如條項13-16中之任一所述的方法,其中:步驟(b)可包括:使該基板、該陰影遮罩或兩者的方位被調整,以將該第一格柵之該等條桿的長軸定位成平行或實質平行於該第二格柵之該等條桿的長軸,且將該第一格柵及該第二格柵的該等條桿定位成各自與該第二格柵及該第一格柵的該等間隙有部份重疊。 The method of any one of clauses 13-16, wherein: step (b) comprises: adjusting an orientation of the substrate, the shadow mask, or both to adjust the first grid The long axes of the bars of the grid are positioned parallel or substantially parallel to the long axis of the bars of the second grid, and the bars of the first grid and the second grid are positioned Each of the gaps of the second grid and the first grid partially overlaps.
條項18:如條項13-17中之任一所述的方法,其中該第一格柵及該第二格柵的該等條桿可各自與該第二格柵及該第一格柵的該等間隙有50%的部份重疊。 The method of any one of clauses 13-17, wherein the first and second bars of the second and second grids are respectively associated with the second grid and the first grid These gaps have a 50% partial overlap.
條項19:如條項13-18中之任一所述的方法,其中:該準直光源可包含一LED以及可操作用以使該LED輸出之光線準直的一準直透鏡;以及該光接收器可包含一PIN二極體以及可操作用以將自該分束器接收之光線聚焦於該PIN二極體上的一聚焦透鏡。 The method of any one of clauses 13-18, wherein: the collimated light source comprises an LED and a collimating lens operable to collimate light output by the LED; The light receiver can include a PIN diode and a focusing lens operable to focus light received from the beam splitter onto the PIN diode.
條項20:如條項13-19中之任一所述的方法,其中每個條桿的一縱軸與對應之基板或陰影遮罩的一中心軸呈±15度徑向地延伸。 Clause 20: The method of any of clauses 13-19, wherein a longitudinal axis of each bar extends radially at ±15 degrees from a central axis of the corresponding substrate or shadow mask.
2‧‧‧陰影遮罩沉積系統 2‧‧‧Shadow mask deposition system
4、4a-4x‧‧‧沉積真空容器 4, 4a-4x‧‧‧ deposition vacuum container
6‧‧‧基板 6‧‧‧Substrate
8‧‧‧分配捲筒 8‧‧‧Distribution reel
10‧‧‧收線捲筒 10‧‧‧Retracting reel
12、12a、12b‧‧‧沉積源 12, 12a, 12b‧‧‧ deposition source
14、14a、14b‧‧‧基板支架 14, 14a, 14b‧‧‧ substrate holder
15、15a、15b、15'‧‧‧陰影遮罩對準系統 15, 15a, 15b, 15'‧‧‧ Shadow Mask Alignment System
16、16a、16b‧‧‧陰影遮罩 16, 16a, 16b‧‧‧ shadow mask
20‧‧‧移動平台 20‧‧‧Mobile platform
20A‧‧‧Y-θ平台 20A‧‧‧Y-θ platform
20B‧‧‧X-Z平台 20B‧‧‧X-Z platform
22‧‧‧控制器 22‧‧‧ Controller
24、24A-24D‧‧‧光源 24, 24A-24D‧‧‧ light source
26、26A-26D‧‧‧光接收器 26, 26A-26D‧‧‧Optical Receiver
28、28A-28D、30、30A-30D‧‧‧格柵 28, 28A-28D, 30, 30A-30D‧‧‧ grille
32、34‧‧‧中央部份 32, 34‧‧‧ central part
36、36’、36A-36D、36A’-36D’‧‧‧光路 36, 36', 36A-36D, 36A’-36D’‧‧‧ light path
38‧‧‧LED 38‧‧‧LED
40‧‧‧準直光學元件/透鏡 40‧‧‧ Collimating optics/lens
42、46‧‧‧(隔開)條桿 42, 46‧‧‧ (separated) poles
44、48‧‧‧間隙;狹縫 44, 48 ‧ ‧ gap; slit
50‧‧‧聚焦光學元件/透鏡 50‧‧‧Focus optics/lens
52、52A-52D‧‧‧PIN二極體 52, 52A-52D‧‧‧ PIN diode
54‧‧‧類比至數位(A/D)轉換器;A/D 54‧‧‧ analog to digital (A/D) converter; A/D
60、60A-60D‧‧‧分束器 60, 60A-60D‧‧ ‧ beam splitter
100、100-1、100-2、100-3‧‧‧圖形 100, 100-1, 100-2, 100-3‧‧‧ graphics
102‧‧‧第一端 102‧‧‧ first end
104‧‧‧第二端 104‧‧‧ second end
106-1~106-17‧‧‧間隙-條桿對 106-1~106-17‧‧‧Gap-bar pair
P1~P17‧‧‧節距 P1~P17‧‧‧ pitch
圖1A為陰影遮罩沉積系統的示意圖;圖1B的放大圖圖示圖1A之陰影遮罩沉積系統的單一沉積真空容器; 圖2為第一示範陰影遮罩對準系統的示意圖;圖3A及圖3B各自為示範基板及陰影遮罩的平面圖,兩者各包括許多對準格柵以利陰影遮罩對於基板的定向及定位,反之亦然;圖3C的孤立視圖圖示由圖示於圖3A及圖3B之基板及陰影遮罩的單一對準格柵的可變節距條桿及間隙組成的單一圖形;圖4為沿著圖2中之直線IV-IV繪出的視圖;圖5為沿著圖2中之直線V-V繪出的視圖;圖6為第二示範陰影遮罩對準系統的示意圖;圖7為沿著圖6中之直線VI-VI繪出的視圖;以及圖8為沿著圖6中之直線VII-VII繪出的視圖。 1A is a schematic illustration of a shadow mask deposition system; FIG. 1B is an enlarged view of a single deposition vacuum container of the shadow mask deposition system of FIG. 1A; 2 is a schematic diagram of a first exemplary shadow mask alignment system; FIGS. 3A and 3B are each a plan view of an exemplary substrate and a shadow mask, each of which includes a plurality of alignment grids to facilitate orientation of the shadow mask to the substrate and Positioning, and vice versa; the isolated view of Figure 3C illustrates a single pattern consisting of variable pitch bars and gaps of a single aligned grid of the substrate and shadow mask illustrated in Figures 3A and 3B; A view taken along line IV-IV in FIG. 2; FIG. 5 is a view taken along line VV in FIG. 2; FIG. 6 is a schematic view of a second exemplary shadow mask alignment system; A view drawn by a line VI-VI in Fig. 6; and Fig. 8 is a view taken along a line VII-VII in Fig. 6.
請參考圖1A及圖1B,用於形成電子裝置,諸如但不受限於高解析度主動矩陣有機發光二極體(OLED)顯示器的示範性陰影遮罩沉積系統2,其包括多個串聯排列的沉積真空容器4(例如,沉積真空容器4a至4x)。沉積真空容器4的排列及數目取決於待用它形成之任何給定產品的必要沉積事件數。 Referring to FIGS. 1A and 1B, an exemplary shadow mask deposition system 2 for forming an electronic device, such as but not limited to a high resolution active matrix organic light emitting diode (OLED) display, includes a plurality of series arrangement The vacuum vessel 4 is deposited (for example, the vacuum vessels 4a to 4x are deposited). The arrangement and number of deposition vacuum vessels 4 depends on the number of necessary deposition events for any given product to be formed therefrom.
在陰影遮罩沉積系統2的一示範非限定用途中,連續可撓的基板6藉助於包含分配捲筒(dispensing reel)8及收線捲筒(take-up reel)10的捲筒至捲筒機構(reel-to-reel mechanism)來平移穿過串聯排列的沉積真空容器4。替換地,基板6可為用本技藝任何習知構件來平移穿過串聯排列 沉積真空容器4的單獨(或連續)基板。之後,為了描述本發明,基板6被假設為一單獨基板。 In an exemplary non-limiting use of the shadow mask deposition system 2, the continuously flexible substrate 6 is retracted to a reel by means of a dispensing reel 8 and a take-up reel 10. A reel-to-reel mechanism is used to translate through the deposition vacuum vessel 4 arranged in series. Alternatively, the substrate 6 can be translated through a series arrangement using any of the conventional components of the present technology. A separate (or continuous) substrate of the vacuum vessel 4 is deposited. Thereafter, in order to describe the present invention, the substrate 6 is assumed to be a single substrate.
每個沉積真空容器包含沉積源12、基板支架14、陰影遮罩對準系統15、以及陰影遮罩16。例如,沉積真空容器4a包含沉積源12a、基板支架14a、遮罩對準系統15a、以及陰影遮罩16a;沉積真空容器4b包含沉積源12b、基板支架14b、遮罩對準系統15b、以及陰影遮罩16b;等等用於任意多個沉積真空容器4。 Each deposition vacuum vessel includes a deposition source 12, a substrate holder 14, a shadow mask alignment system 15, and a shadow mask 16. For example, the deposition vacuum vessel 4a includes a deposition source 12a, a substrate holder 14a, a mask alignment system 15a, and a shadow mask 16a; the deposition vacuum vessel 4b includes a deposition source 12b, a substrate holder 14b, a mask alignment system 15b, and a shadow The mask 16b; and the like are used for any of a plurality of deposition vacuum vessels 4.
於一沉積事件期間,每個沉積源12會被填充有要透過對應之陰影遮罩16之一或更多開口而沉積到基板6上的所欲材料,對應陰影遮罩16在對應沉積真空容器4中與基板6之一部份保持緊密接觸。陰影遮罩16可為揭示於頒給Brody之美國專利第7,638,417號的習知單層陰影遮罩或複合(多層)型陰影遮罩,該文獻併入本文作為參考資料。 During a deposition event, each deposition source 12 is filled with the desired material to be deposited onto the substrate 6 through one or more openings of the corresponding shadow mask 16, corresponding to the shadow mask 16 in the corresponding deposition vacuum container. 4 is in close contact with one of the portions of the substrate 6. The shadow mask 16 can be a conventional single layer shadow mask or composite (multilayer) type shadow mask disclosed in U.S. Patent No. 7,638,417 to the name of the entire disclosure of which is incorporated herein by reference.
陰影遮罩沉積系統2的每個陰影遮罩16包含一或更多開口。每個陰影遮罩16中的開口對應於在基板6平移穿過陰影遮罩沉積系統2時,將會由對應的沉積真空容器4中之對應的沉積源12沉積於基板6上之材料的所欲圖形。 Each shadow mask 16 of the shadow mask deposition system 2 includes one or more openings. The opening in each of the shadow masks 16 corresponds to the material that will be deposited on the substrate 6 by the corresponding deposition source 12 in the corresponding deposition vacuum vessel 4 as the substrate 6 is translated through the shadow mask deposition system 2. Want graphics.
每個陰影遮罩16可由例如鎳、鉻、鋼、銅、可伐合金(Kovar®)或因伐合金(Invar®)構成,且具有厚度最好在20至200微米之間,以及在20至50微米之間更好。例如,可伐合金及因伐合金可取自美國俄勒岡州亞甚蘭的ESPICorp公司。在美國,可伐合金®的註冊商標為第337,962號,目前由特拉華州威爾明頓的CRS Holdings公司所擁有,而因 伐合金®的註冊商標為第63,970號,目前由法國的Imphy S.A公司所擁有。 Each of the shadow masks 16 may be composed of, for example, nickel, chromium, steel, copper, Kovar® or Invar®, and has a thickness preferably between 20 and 200 microns, and at 20 to Better between 50 microns. For example, Kovar and Invar are available from ESPICorp, Inc., Aachen, Oregon, USA. In the United States, Kovar Alloy® is registered under No. 337,962 and is currently owned by CRS Holdings, Wilmington, Delaware. The registered trademark of Faw Alloy® is No. 63,970 and is currently owned by Imphy S.A of France.
熟諳此藝者了解陰影遮罩沉積系統2可包含附加平台(未圖示),例如眾所周知的退火平台、試驗平台、一或更多清洗平台、切割及安裝平台、及類似者。此外,對於特定的應用,本技藝一般技術人員可按需要修改沉積真空容器4的數目、目的及配置,用以採所欲次序沉積一或更多材料。在頒給Brody等人的美國專利第6,943,066號中有揭示示範陰影遮罩沉積系統及其使用方法,該文獻併入本文作為參考資料。 Those skilled in the art will appreciate that the shadow mask deposition system 2 can include additional platforms (not shown) such as well known annealing platforms, test platforms, one or more cleaning platforms, cutting and mounting platforms, and the like. Moreover, for a particular application, one of ordinary skill in the art can modify the number, purpose, and configuration of the deposition vacuum vessels 4 as needed to deposit one or more materials in the desired order. An exemplary shadow mask deposition system and method of use thereof are disclosed in U.S. Patent No. 6,943,066, the disclosure of which is incorporated herein by reference.
沉積真空容器4可用來沉積數種材料於基板6以在基板6上形成電子裝置的一或更多電子元件。每個電子元件可為,例如,薄膜電晶體(TFT)、記憶元件、電容器、等等。可沉積一或更多電子元件的組合以形成較高層級的電子元件,例如但不受限於,電子裝置的次像素(sub-pixel)或像素。如併入本文作為參考資料的美國專利第6,943,066號所述的,藉由在連續沉積事件中經由沉積真空容器4連續沉積材料於基板6上可單獨形成多層電路。 The deposition vacuum vessel 4 can be used to deposit several materials on the substrate 6 to form one or more electronic components of the electronic device on the substrate 6. Each of the electronic components may be, for example, a thin film transistor (TFT), a memory element, a capacitor, or the like. A combination of one or more electronic components can be deposited to form higher level electronic components such as, but not limited to, sub-pixels or pixels of an electronic device. The multilayer circuit can be separately formed by continuously depositing material on the substrate 6 via the deposition vacuum vessel 4 in a continuous deposition event as described in U.S. Patent No. 6,943,066, the disclosure of which is incorporated herein by reference.
每個沉積真空容器4係連接至真空來源(未圖示),其係可操作用以在其中建立適當的真空以便使得配置於對應沉積源12的材料能夠以本技藝所習知的方式(例如,濺鍍或氣相沉積)通過對應陰影遮罩16的一或更多開口沉積於基板6上。 Each deposition vacuum vessel 4 is connected to a vacuum source (not shown) that is operable to establish a suitable vacuum therein to enable the material disposed in the corresponding deposition source 12 to be in a manner known in the art (eg, , sputtering or vapor deposition) is deposited on the substrate 6 through one or more openings corresponding to the shadow mask 16.
不論基板6的形式為何,例如,連續板材或單獨 基板,每個沉積真空容器4可包含在基板6平移穿過它時可避免基板6下垂的支架或導件。 Regardless of the form of the substrate 6, for example, continuous sheet or separate The substrate, each deposition vacuum vessel 4, can include a bracket or guide that avoids sagging of the substrate 6 as it is translated through it.
在陰影遮罩沉積系統2操作時,在基板6行進通過沉積真空容器4時,配置於每個沉積源12的材料在有適當的真空下通過對應陰影遮罩16的一或更多開口沉積於對應沉積真空容器4中之該基板6上,而在基板6上形成複數個連續的圖形。更具體言之,基板6在每個沉積真空容器4中定位成有預定的時距。在此預定時距期間,材料由對應沉積源12沉積於基板6上。在此預定時距後,基板6前進至下一個串聯的真空容器用以額外的加工(如適用)。繼續前進直到基板6經過所有的沉積真空容器4於是基板6離開序列中最後一個沉積真空容器4。 During operation of the shadow mask deposition system 2, as the substrate 6 travels through the deposition of the vacuum vessel 4, the material disposed at each deposition source 12 is deposited by one or more openings of the corresponding shadow mask 16 under appropriate vacuum. Corresponding to the substrate 6 in the deposition vacuum vessel 4, a plurality of continuous patterns are formed on the substrate 6. More specifically, the substrate 6 is positioned in each deposition vacuum vessel 4 for a predetermined time interval. During this predetermined time interval, material is deposited on the substrate 6 by the corresponding deposition source 12. After this predetermined time interval, the substrate 6 is advanced to the next series of vacuum vessels for additional processing (if applicable). Moving on until the substrate 6 passes through all of the deposition vacuum vessel 4 and the substrate 6 leaves the last deposition vacuum vessel 4 in the sequence.
請參考圖2及繼續參考圖1A與圖1B,遮罩對準系統15包含一或更多移動平台20用以控制基板6、陰影遮罩16或兩者的方位及位置以用後述方式對準基板6與陰影遮罩16。遮罩對準系統15的一合意非限定實施例包含耦合至Y-θ平台20A的基板6與耦合至X-Z平台20B的陰影遮罩16。利用一或更多平台20使基板6、陰影遮罩16或兩者在X方向、Y方向、Z方向及/或θ方向(在本實施例中,θ方向為基板6在X-Y平面的旋轉平移)可平移、定向及/或定位,係為業界習知且為求簡潔不在此進一步描述。 Referring to FIG. 2 and with continued reference to FIGS. 1A and 1B, the mask alignment system 15 includes one or more moving platforms 20 for controlling the orientation and position of the substrate 6, the shadow mask 16, or both for alignment as will be described later. Substrate 6 and shadow mask 16. A desirable non-limiting embodiment of the mask alignment system 15 includes a substrate 6 coupled to the Y-theta platform 20A and a shadow mask 16 coupled to the X-Z platform 20B. The substrate 6, the shadow mask 16 or both are in the X direction, the Y direction, the Z direction, and/or the θ direction using one or more platforms 20 (in the present embodiment, the θ direction is a rotation of the substrate 6 in the XY plane) The ability to translate, orient, and/or position is well known in the art and will not be further described herein for the sake of brevity.
在此,意圖將諸如「平移(translating)」、「平移(translation)」、「定向」、「方位」、「定位」之類的字詞及個別或組合的類似外來字詞視作其係廣義地描述在X方向、Y 方向、Z方向及/或θ方向中之任一或組合的運動。因此,此類字詞不應被視為要限制或限定在任一或更多方向的運動。 Here, it is intended to treat words such as "translating", "translation", "orientation", "orientation", "positioning", and similar or similar foreign words as their generalized Described in the X direction, Y Movement of any or a combination of direction, Z direction, and/or θ direction. Therefore, such words should not be considered as limiting or limiting movement in either or more directions.
Y-θ平台20A及X-Z平台20B是在控制器22的控制下操作,可用硬體及/或軟體的任何適當及/或合意組合來實作該控制器22以使得可用後述方式控制移動平台20A及20B。 The Y-theta platform 20A and the XZ platform 20B are operated under the control of the controller 22, and the controller 22 can be implemented with any suitable and/or desirable combination of hardware and/or software to enable control of the mobile platform 20A in a manner that will be described later. And 20B.
遮罩對準系統15更包含一或更多光源24與一或更多光接收器26。每個光源24經定位成可對準一個光接收器26以定義一對光源24-光接收器26。每一對光源24-光接收器26定義在兩者之間的光路36。 The mask alignment system 15 further includes one or more light sources 24 and one or more light receivers 26. Each light source 24 is positioned to be aligned with a light receiver 26 to define a pair of light sources 24-to-light receiver 26. Each pair of light sources 24-optical receiver 26 defines an optical path 36 therebetween.
使用遮罩對準系統時,基板6及陰影遮罩16位在每對光源24-光接收器26的光路36中。在一合意實施例中,遮罩對準系統15包含四個光源24與四個光接收器26,總共有定義四條光路36的四對光源24-光接收器26。不過,這不應被視為是要限定本發明。 When the mask is used to align the system, the substrate 6 and the shadow mask 16 are positioned in the optical path 36 of each pair of light sources 24-photoreceiver 26. In a preferred embodiment, the mask alignment system 15 includes four light sources 24 and four light receivers 26, for a total of four pairs of light sources 24 - light receivers 26 defining four optical paths 36. However, this should not be construed as limiting the invention.
請參考圖3A至圖3B及繼續參考圖1A至圖1B及圖2,基板6包含一或更多格柵28,以及陰影遮罩16包含一或更多格柵30。在一非限定實施例中,基板6包含四個格柵28A-28D以及陰影遮罩16包含四個格柵30A-30D。在圖示於圖3A的實施例中,基板6有矩形或方形形狀以及每個格柵28A-28D經定位成與基板6的四個角落中之一個毗鄰。同樣,在圖示於圖3B的實施例中,陰影遮罩16有矩形或方形形狀以及每個格柵30A-30D經定位成與陰影遮罩16的四個 角落中之一個毗鄰。基板6中以元件符號32表示的中央部份是將會在基板6上發生沉積事件的地方。陰影遮罩16中以元件符號34表示的中央部份為陰影遮罩16包含由一或更多開口組成之圖形的地方,來自沉積源12的材料通過該等開口沉積於區域32上,該圖形與由陰影遮罩16之區域34中之一或更多開口組成的圖形相同。 Referring to FIGS. 3A-3B and continuing to refer to FIGS. 1A-1B and 2, the substrate 6 includes one or more grids 28, and the shadow mask 16 includes one or more grids 30. In a non-limiting embodiment, the substrate 6 includes four grids 28A-28D and the shadow mask 16 includes four grids 30A-30D. In the embodiment illustrated in FIG. 3A, the substrate 6 has a rectangular or square shape and each of the grids 28A-28D is positioned adjacent one of the four corners of the substrate 6. Also, in the embodiment illustrated in FIG. 3B, the shadow mask 16 has a rectangular or square shape and each of the grids 30A-30D is positioned to be four with the shadow mask 16. One of the corners is adjacent. The central portion of the substrate 6 indicated by the symbol 32 is where deposition events will occur on the substrate 6. The central portion of the shadow mask 16 indicated by the symbol 34 is where the shadow mask 16 contains a pattern of one or more openings through which material from the deposition source 12 is deposited on the region 32. The same pattern as one or more of the openings 34 in the area 34 of the shadow mask 16.
請參考圖3C及繼續參考圖3A至圖3B,在一實施例中,每個格柵28及30包含由可變節距條桿及間隙組成的一或更多圖形100。在圖示於圖3A的實施例中,基板6的每個格柵28包括由可變節距條桿及間隙組成的三個圖形100-1、100-2及100-3。同樣,在圖示於圖3B的實施例中,陰影遮罩16的每個格柵30包括由可變節距條桿及間隙組成的3個圖形100-1、100-2及100-3。不過,圖3A及圖3B圖示每個格柵包括由可變節距條桿及間隙組成的三個圖形100不應被視作本發明的限制,因為可想到的是,每個格柵可包括由可變節距條桿及間隙組成的任意多個圖形100,包括一個圖形、兩個圖形或三個以上圖形,如果本技藝一般技術人員認為合適及/或可取的話。此外,在圖示於圖3A及圖3B的實施例中,基板6的格柵28與陰影遮罩16的格柵30相同。不過,這不應被視為是要限定本發明,因為可想到的是,基板6的每個格柵28可包括數目與基板6中之任一或更多其他格柵28相同或不同的圖形100。同樣,陰影遮罩16的每個格柵30可包括數目與陰影遮罩16中之任一或更多其他格柵30相同或不同的圖形100。 Referring to FIG. 3C and continuing to FIG. 3A through FIG. 3B, in one embodiment, each of the grids 28 and 30 includes one or more patterns 100 comprised of variable pitch bars and gaps. In the embodiment illustrated in FIG. 3A, each of the grids 28 of the substrate 6 includes three patterns 100-1, 100-2, and 100-3 comprised of variable pitch bars and gaps. Similarly, in the embodiment illustrated in FIG. 3B, each of the grids 30 of the shadow mask 16 includes three patterns 100-1, 100-2, and 100-3 comprised of variable pitch bars and gaps. However, Figures 3A and 3B illustrate that each of the grids including three patterns 100 comprised of variable pitch bars and gaps should not be considered limiting of the present invention, as it is conceivable that each grid may include Any plurality of graphics 100 comprised of variable pitch bars and gaps, including one graphic, two graphics, or more than three graphics, as the skilled artisan would consider appropriate and/or desirable. Moreover, in the embodiment illustrated in Figures 3A and 3B, the grid 28 of the substrate 6 is identical to the grid 30 of the shadow mask 16. However, this should not be seen as limiting the invention, as it is conceivable that each grid 28 of the substrate 6 may comprise a number of figures that are the same or different from any one or more of the other grids 28 of the substrate 6. 100. Likewise, each of the grids 30 of the shadow mask 16 can include a number 100 that is the same or different than any one or more of the grids 30 of the shadow mask 16.
在一實施例中,基板6的每個格柵包括多個隔開條桿42,在一實施例中,為隔開的平行條桿。每對隔開條桿42以穿過基板6的間隙或狹縫44隔開。在一實施例中,每個間隙44的寬度相同(或不變)同時每個條桿42的寬度不同。不過,這不應被視為是要限定本發明,因為可想到的是,每個條桿42的寬度可為相同,而每個間隙48的寬度可為不同。在一實施例中,在每個格柵28的各個圖形100的第一端102、第二端104之間,每個條桿42的寬度在第一端102、第二端104之間有變化。同樣,每個格柵30包括多個隔開條桿46,在一實施例中,為隔開的平行條桿。每對隔開條桿46以穿過格柵30的間隙或狹縫48隔開。在一實施例中,每個間隙48的寬度相同(或不變),而每個條桿46的寬度不同。不過,這不應被視為是要限定本發明,因為可想到的是,每個間隙48的寬度可為不同,而每個條桿46的寬度可為相同。在一實施例中,在每個格柵30的各個圖形100的第一端102、第二端104之間,每個條桿46的寬度在第一端102、第二端104之間有變化。 In one embodiment, each of the grids of the substrate 6 includes a plurality of spaced apart bars 42 which, in one embodiment, are spaced apart parallel bars. Each pair of spaced apart bars 42 are separated by a gap or slit 44 that passes through the substrate 6. In one embodiment, each gap 44 has the same width (or constant) while the width of each bar 42 is different. However, this should not be seen as limiting the invention, as it is conceivable that the width of each bar 42 may be the same and the width of each gap 48 may be different. In one embodiment, between the first end 102 and the second end 104 of each of the patterns 100 of each of the grids 28, the width of each of the bars 42 varies between the first end 102 and the second end 104. . Likewise, each grid 30 includes a plurality of spaced apart bars 46, in one embodiment, spaced apart parallel bars. Each pair of spaced apart bars 46 are separated by a gap or slit 48 that passes through the grid 30. In one embodiment, each gap 48 has the same width (or constant) and each bar 46 has a different width. However, this should not be considered as limiting the invention, as it is conceivable that the width of each gap 48 can be different and the width of each bar 46 can be the same. In one embodiment, between the first end 102 and the second end 104 of each of the patterns 100 of each of the grids 30, the width of each of the bars 46 varies between the first end 102 and the second end 104. .
在一實施例中,基板6的每個間隙44與陰影遮罩16的每個間隙48有相同的寬度。不過,這不應被視為是要限定本發明,因為可想到的是,每個格柵28、每個格柵30、或格柵28及30兩者的間隙寬度可有所不同。 In an embodiment, each gap 44 of the substrate 6 has the same width as each gap 48 of the shadow mask 16. However, this should not be considered as limiting the invention, as it is conceivable that the gap width of each of the grids 28, each grid 30, or grids 28 and 30 may vary.
圖3C的示範孤立視圖圖示由格柵28及/或格柵30之可變節距條桿及間隙組成的單一圖形100。由圖3C可見,各個間隙-條桿對106-1~106-17的同一個特徵之間的節距 P1-P17或距離是可變的。例如,間隙-條桿對106-1有小於間隙-條桿對106-2之節距P2的節距P1,接著是節距P2小於間隙-條桿對106-3的節距P3,諸如此類,直到間隙-條桿對106-17的節距P17,在此實施例中,它在節距P1~P17中是最大的節距。在圖示於圖3C的實施例中,每個條桿42/46的寬度不同。 The exemplary isolated view of FIG. 3C illustrates a single graphic 100 comprised of variable pitch bars and gaps of the grid 28 and/or grid 30. As can be seen from Figure 3C, the pitch between the same features of each gap-bar pair 106-1~106-17 P1-P17 or distance is variable. For example, the gap-bar pair 106-1 has a pitch P1 that is less than the pitch P2 of the gap-bar pair 106-2, then the pitch P2 is smaller than the pitch P3 of the gap-bar pair 106-3, and the like, Up to the pitch P17 of the gap-bar pair 106-17, in this embodiment, it is the largest pitch among the pitches P1 to P17. In the embodiment illustrated in Figure 3C, the width of each bar 42/46 is different.
由圖3C中之示範尺寸圖示的示範可變節距P1~P17不應被視為是要限定本發明,因為可想到的是,圖形100的可變節距可為任何適當或可取節距圖形,例如但不受限於:巴可碼、線性調頻序列、指數調頻序列、最大長度序列、或虛擬亂數序列。亦可想到使用隨機可變節距。例如,節距P3可小於節距P1,而節距P1小於節距P2。 The exemplary variable pitches P1 - P17 illustrated by the exemplary dimensions in Figure 3C should not be considered as limiting the invention, as it is conceivable that the variable pitch of the graphics 100 can be any suitable or desirable pitch pattern, For example, but not limited to: Barco code, chirp sequence, exponential frequency sequence, maximum length sequence, or virtual random number sequence. It is also conceivable to use a random variable pitch. For example, the pitch P3 may be smaller than the pitch P1, and the pitch P1 is smaller than the pitch P2.
經由使用由可變節距條桿及間隙組成之一或更多圖形100的各個格柵28及30,可避免因使用有不變節距之條桿及間隙而存在的潛在歧義。 By using the respective grids 28 and 30 of one or more of the patterns 100 composed of variable pitch bars and gaps, potential ambiguities due to the use of bars and gaps with constant pitch can be avoided.
現將描述使用遮罩對準系統15來對準具有一或更多格柵28的基板6與具有一或更多格柵30的陰影遮罩16。 The use of a mask alignment system 15 to align a substrate 6 having one or more grids 28 with a shadow mask 16 having one or more grids 30 will now be described.
一開始,如圖2所示,基板6移動到在光源(或數個)24與光接收器(或數個)26之間的光路36中與陰影遮罩16隔開地大體對準。當基板6與陰影遮罩16在圖2所示之光路36中大體對準時,基板6的每個格柵28與陰影遮罩16的每個格柵30係定位於一對光源24-光接收器26的一光路36中。例如,在遮罩對準系統15包含各自定義四條光路36A-36D的四對光源-光接收器24A-26A、24B-26B、24C-26C及24D-26D, 以及基板6包含格柵28A-28D,及陰影遮罩16包含格柵30A-30D時:格柵28A及30A定位於從光源24A到光接收器26A的光路36A中;格柵28B及30B定位於從光源24B到光接收器26B的光路36B中;格柵28C及30C定位於從光源24C到光接收器26C的光路36C中;以及格柵28D及30D定位於從光源24D到光接收器26D的光路36D中。 Initially, as shown in FIG. 2, the substrate 6 is moved into a generally aligned manner with the shadow mask 16 in the optical path 36 between the light source(s) 24 and the light receiver (or plurality) 26. When the substrate 6 and the shadow mask 16 are substantially aligned in the optical path 36 shown in FIG. 2, each of the grids 28 of the substrate 6 and each of the grids 30 of the shadow mask 16 are positioned in a pair of light sources 24 - light receiving In an optical path 36 of the device 26. For example, the mask alignment system 15 includes four pairs of light source-light receivers 24A-26A, 24B-26B, 24C-26C, and 24D-26D each defining four optical paths 36A-36D, And the substrate 6 includes the grids 28A-28D, and the shadow mask 16 includes the grids 30A-30D: the grids 28A and 30A are positioned in the light path 36A from the light source 24A to the light receiver 26A; the grids 28B and 30B are positioned From the light source 24B to the optical path 36B of the light receiver 26B; the grids 28C and 30C are positioned in the optical path 36C from the light source 24C to the light receiver 26C; and the grids 28D and 30D are positioned from the light source 24D to the light receiver 26D. In the optical path 36D.
圖4的俯視圖圖示在光源24A-24D、光接收器26A-26D(以虛線圖示)之間大體對準的基板6與陰影遮罩16,以及各自用於各對光源-光接收器之光路36A-36D的位置。應瞭解的是,在圖4中,格柵28A及30A位在光路36A中;格柵28B及30B位在光路36B中;格柵28C及30C位在光路36C中;以及格柵28D及30D位在光路36D中。 4 is a plan view of substrate 6 and shadow mask 16 that are generally aligned between light sources 24A-24D, light receivers 26A-26D (shown in phantom), and for each pair of light source-light receivers. The position of the light path 36A-36D. It should be understood that, in FIG. 4, the grids 28A and 30A are located in the optical path 36A; the grids 28B and 30B are located in the optical path 36B; the grids 28C and 30C are located in the optical path 36C; and the grids 28D and 30D are located. In the optical path 36D.
一旦基板6與陰影遮罩16大體對準,基板6與陰影遮罩16的粗略對準可選擇性地在基板6與陰影遮罩16的精細對準之前進行,如將會在以下配合圖5描述地。為了以下說明,假設的是基板6與陰影遮罩16的粗略對準係在精細對準之前進行。不過,這不應被視為是要限定本揭示內容,因為可想到的是,精細對準可在上述大體對準之後直接進行,從而避開接下來會說明的基板6與陰影遮罩16的粗略對準。 Once the substrate 6 is substantially aligned with the shadow mask 16, the coarse alignment of the substrate 6 with the shadow mask 16 can be selectively performed prior to the fine alignment of the substrate 6 with the shadow mask 16, as will be discussed below in conjunction with FIG. Describe the ground. For the following description, it is assumed that the coarse alignment of the substrate 6 with the shadow mask 16 is performed prior to fine alignment. However, this should not be seen as limiting the disclosure, as it is conceivable that the fine alignment can be performed directly after the above-described general alignment, thereby avoiding the substrate 6 and the shadow mask 16 which will be described next. Roughly aligned.
在粗略對準期間,陰影遮罩16與基板6處於隔開關係以及激活每個光源24以沿著它的光路36輸出光線。實現基板6及陰影遮罩16在X方向的粗略對準可藉由使基板6與陰影遮罩16中之一者或兩者按需要在±X方向平移、定向 及/或定位以最大化穿過位於光路36中之格柵28及30的光線,從而,最大化被對應光接收器26接收的光線。在基板6與陰影遮罩16在X方向粗略對準的一實施例中,與基板6處於隔開關係的陰影遮罩16經由X-Z平台20B在±X方向被平移、定向及/或定位,直到源於光源24A-24D穿過格柵28A-30A、28B-30B、28C-30C及28D-30D的最大光量各自被光接收器26A-26D接收。在此實施例中,在X方向的粗略對準期間,基板6可保持靜止不動。以下會參考圖5詳述每個光源24與光接收器26以及用於處理每個光接收器26之輸出以響應從對應光源24接收光線的構件。 During coarse alignment, the shadow mask 16 is in spaced relation to the substrate 6 and each light source 24 is activated to output light along its optical path 36. A rough alignment of the substrate 6 and the shadow mask 16 in the X direction can be achieved by translating and orienting one or both of the substrate 6 and the shadow mask 16 in the ±X direction as needed. And/or positioning to maximize light passing through the grids 28 and 30 located in the optical path 36, thereby maximizing the light received by the corresponding light receiver 26. In an embodiment in which the substrate 6 and the shadow mask 16 are roughly aligned in the X direction, the shadow mask 16 in spaced relation to the substrate 6 is translated, oriented, and/or positioned in the ±X direction via the XZ platform 20B until The maximum amount of light originating from the light sources 24A-24D through the grids 28A-30A, 28B-30B, 28C-30C, and 28D-30D is each received by the light receivers 26A-26D. In this embodiment, the substrate 6 can remain stationary during the coarse alignment in the X direction. Each of the light source 24 and the light receiver 26 and means for processing the output of each of the light receivers 26 in response to receiving light from the corresponding light source 24 will be described in detail below with reference to FIG.
實現基板6及陰影遮罩16在Y、θ方向的粗略對準同樣可藉由使基板6與陰影遮罩16中之一者或兩者在±Y、±θ方向按需要平移、定向及/或定位以最大化穿過位於光路36中之格柵28及30的光線,從而,最大化被對應光接收器26接收的光線。在基板6與陰影遮罩16在Y方向粗略對準的一實施例中,與陰影遮罩16處於隔開關係的基板6經由Y-θ平台20A在±Y方向被平移、定向及/或定位,直到源於光源24A-24D穿過格柵28A-30A、28B-30B、28C-30C及28D-30D的最大光量各自被光接收器26A-26D接收。同樣,在基板6與陰影遮罩16在θ方向粗略對準的一實施例中,與陰影遮罩16處於隔開關係的基板6經由Y-θ平台20A在±θ方向被平移、定向及/或定位,直到源於光源24A-24D穿過格柵28A-30A、28B-30B、28C-30C及28D-30D的最大光量各自被光接收器26A-26D接收。在這些實施例中,在Y、θ方向 的粗略對準期間,基板陰影遮罩16可保持靜止不動。 A rough alignment of the substrate 6 and the shadow mask 16 in the Y and θ directions can also be achieved by shifting, orienting, and/or one of the substrate 6 and the shadow mask 16 in the ±Y, ±θ directions as needed. Or positioned to maximize light passing through the grids 28 and 30 located in the optical path 36, thereby maximizing the light received by the corresponding light receiver 26. In an embodiment where the substrate 6 and the shadow mask 16 are roughly aligned in the Y direction, the substrate 6 in spaced relation to the shadow mask 16 is translated, oriented, and/or positioned in the ±Y direction via the Y-theta platform 20A. Until the maximum amount of light originating from the light sources 24A-24D through the grids 28A-30A, 28B-30B, 28C-30C, and 28D-30D is each received by the light receivers 26A-26D. Similarly, in an embodiment where the substrate 6 and the shadow mask 16 are roughly aligned in the θ direction, the substrate 6 in spaced relation to the shadow mask 16 is translated, oriented, and/or in the ±θ direction via the Y-theta platform 20A. Or positioned until the maximum amount of light from sources 28A-24D through grids 28A-30A, 28B-30B, 28C-30C, and 28D-30D is received by light receivers 26A-26D, respectively. In these embodiments, in the Y, θ directions During the coarse alignment, the substrate shadow mask 16 can remain stationary.
可想到的是,基板6與陰影遮罩16在X、Y及θ方向的粗略對準可用任何次序完成。此外,亦可想到的是,基板6與陰影遮罩16可在X、Y及θ方向中之一或兩者而不必用全部3者成功完成粗略對準。 It is conceivable that the coarse alignment of the substrate 6 with the shadow mask 16 in the X, Y and θ directions can be done in any order. In addition, it is also conceivable that the substrate 6 and the shadow mask 16 can be successfully aligned in one or both of the X, Y and θ directions without having to use all three.
請參考圖5,此時描述基板6之一格柵28的單一圖形100與陰影遮罩16之一格柵30的單一圖形100(亦即,一格柵對28-30)沿著一光路36的精細對準。不過,應瞭解,格柵對28-30之單一圖形100沿著圖5之光路36的精細對準也可應用於位在各個光路36中之各對格柵28-30之一或更多圖形100的對準。 Referring to FIG. 5, a single pattern 100 of one of the grids 28 of the substrate 6 and a single pattern 100 of one of the grids 30 of the shadow mask 16 (ie, a pair of grids 28-30) are described along an optical path 36. Fine alignment. However, it should be understood that the fine alignment of the single pattern 100 of grid pairs 28-30 along the optical path 36 of FIG. 5 can also be applied to one or more of the pairs of grids 28-30 located in each of the optical paths 36. 100 alignment.
以處於隔開關係的陰影遮罩16與基板6以及陰影遮罩16與基板6的後續大體或粗略對準開始,在適當的時間,激活每個光源24以沿著它的光路36輸出光線。在一非限定性實施例中,每個光源包括輸出光線至準直光學元件/透鏡40的LED 38,準直光學元件/透鏡40係準直由LED 38輸出的光線以及沿著光路36輸出該準直光。 Beginning with the shadow mask 16 and the substrate 6 in spaced relationship and subsequent substantial or coarse alignment of the shadow mask 16 with the substrate 6, each light source 24 is activated to output light along its optical path 36 at the appropriate time. In a non-limiting embodiment, each light source includes an LED 38 that outputs light to a collimating optic/lens 40 that collimates light output by LED 38 and outputs the light along optical path 36. Collimate light.
繼續參考圖5以及再參考圖3A及圖3B,基板6及陰影遮罩16的每個條桿或每個間隙對於圖示於圖3A的各自X軸不必以相同的角度定向或定位。在一實施例中,基板6之各個條桿42及各個間隙44的縱軸對於圖示於圖3A的X軸在標稱上可以45度的θ1角定向或定位。不過,基板6之每個條桿42及每個間隙44的縱軸方位角θ1對於X軸可具有45度±15度的標稱方位角θ1。此外,可以不同角度θ1定向或定位 每個條桿42及每個間隙44。不過,基板6之每個格柵28的條桿42及間隙44平行是可取的。 With continued reference to FIG. 5 and with reference to FIGS. 3A and 3B, each bar or gap of the substrate 6 and shadow mask 16 need not be oriented or positioned at the same angle for the respective X-axis illustrated in FIG. 3A. In one embodiment, the longitudinal axes of the respective bars 42 of the substrate 6 and the respective gaps 44 are oriented or positioned at a nominal θ1 angle of 45 degrees as illustrated on the X-axis of FIG. 3A. However, the longitudinal axis azimuth angle θ1 of each of the bars 42 of the substrate 6 and each of the gaps 44 may have a nominal azimuth angle θ1 of 45 degrees ± 15 degrees with respect to the X-axis. In addition, it can be oriented or positioned at different angles θ1 Each bar 42 and each gap 44. However, it is preferable that the bars 42 and the gaps 44 of each of the grids 28 of the substrate 6 are parallel.
同樣,在一實施例中,陰影遮罩16之每個條桿46及每個間隙48的縱軸最好在標稱上對於圖示於圖3B的X軸以45度的角度θ2定向或定位。不過,每個條桿46與每個間隙48的縱軸方位角θ2對於X軸可有45度±15度的標稱方位角θ2。此外,每個條桿46與每個間隙48可以不同的角度θ2定向或定位。不過,陰影遮罩16之每個格柵30的條桿46及間隙48平行是可取的。 Also, in one embodiment, each of the bars 46 of the shadow mask 16 and the longitudinal axis of each gap 48 are preferably nominally oriented or positioned at an angle θ2 of 45 degrees for the X-axis illustrated in Figure 3B. . However, the azimuth angle θ2 of each bar 46 and the longitudinal axis of each gap 48 may have a nominal azimuth angle θ2 of 45 degrees ± 15 degrees with respect to the X axis. Moreover, each bar 46 can be oriented or positioned at a different angle θ2 from each gap 48. However, it is desirable that the bars 46 and gaps 48 of each of the grids 30 of the shadow mask 16 are parallel.
更一般地,每個條桿42、46的縱軸與每個間隙44及48的縱軸可各自從基板6與陰影遮罩16的中心徑向延伸±15度。在一實施例中,對於每個格柵,該格柵的條桿及間隙可平行。不過,亦可想到的是,視情形而定,該格柵的條桿及間隙可採輻狀圖形方式由基板6或陰影遮罩16的中心徑向延伸。因此,在一實施例中,但不受限於,在將角度θ1-θ2定向或定位成對於對應X軸有30度角時,每個條桿42、46的縱軸與每個間隙44、48的縱軸可與30度相差±15度。 More generally, the longitudinal axes of each of the bars 42, 46 and the longitudinal axes of each of the gaps 44 and 48 may each extend ±15 degrees radially from the center of the substrate 6 and the shadow mask 16. In an embodiment, the bars and gaps of the grid may be parallel for each grid. However, it is also conceivable that the bars and gaps of the grid may extend radially from the center of the substrate 6 or the shadow mask 16 in a radial pattern, as the case may be. Thus, in an embodiment, but not limited to, the longitudinal axis of each bar 42, 46 and each gap 44, when the angles θ1-θ2 are oriented or positioned at an angle of 30 degrees for the corresponding X-axis, The longitudinal axis of 48 can be ±15 degrees from 30 degrees.
應瞭解,任何一對格柵28-30的條桿42、46與間隙48、44之間的角位移有可能相差多達30度,例如,當條桿42對於基板6之X軸有60度角時,間隙48對於它的陰影遮罩16之X軸有30度角,以及基板6與陰影遮罩16的X軸平行;60度與30度相差30度。 It will be appreciated that the angular displacement between the bars 42 and 46 of any pair of grids 28-30 and the gaps 48, 44 may differ by as much as 30 degrees, for example, when the bar 42 is 60 degrees to the X axis of the substrate 6. At the corners, the gap 48 has an angle of 30 degrees with respect to the X-axis of its shadow mask 16, and the substrate 6 is parallel to the X-axis of the shadow mask 16; 60 degrees and 30 degrees are 30 degrees apart.
請再參考圖5,由光源24輸出的準直光各自穿過 經大體或粗略對準之格柵28及30的間隙44及48,而且被光接收器26接收。光接收器26包括聚焦光學元件/透鏡50,其係聚焦在經過格柵28、30的經粗略對準之間隙44、48之後的準直光以便被形式為PIN二極體52的光檢測構件接收。遮罩對準系統15之每個光接收器26之每個PIN二極體52的輸出提供給控制器22的類比至數位(A/D)轉換器54將每個PIN二極體52的類比輸出轉換成對應數位訊號供控制器22的處理構件處理。每個PIN二極體52的輸出對應至被PIN二極體52接收的光量,被PIN二極體52接收的光量愈大,它的輸出電壓愈大,被PIN二極體52接收的光量愈小,它的輸出電壓愈小。 Referring again to FIG. 5, the collimated light output by the light source 24 passes through each other. The gaps 44 and 48 of the grids 28 and 30 are generally or roughly aligned and received by the light receiver 26. The light receiver 26 includes a focusing optics/lens 50 that focuses the collimated light after passing through the roughly aligned gaps 44, 48 of the grids 28, 30 to be illuminated by the light detecting member in the form of a PIN diode 52. receive. The output of each PIN diode 52 of each of the light receivers 26 of the mask alignment system 15 is provided to the analog to digital (A/D) converter 54 of the controller 22 to classify each PIN diode 52. The output is converted to a corresponding digital signal for processing by the processing component of controller 22. The output of each PIN diode 52 corresponds to the amount of light received by the PIN diode 52. The greater the amount of light received by the PIN diode 52, the greater its output voltage, and the greater the amount of light received by the PIN diode 52. Small, its smaller the output voltage.
在適當的時間,控制器22開始經由Y-θ平台20A及/或X-Z平台20B來精細定位基板6、陰影遮罩16或兩者以使基板6與陰影遮罩16相互對準,藉此定位每一對格柵28-30於光路36中,格柵28至少有一些條桿42與格柵30中之一些間隙48(在橫亙於光路36的方向,最好垂直地)有所欲程度的重疊,以及格柵30至少有一些條桿46與格柵28中之一些間隙44(在橫亙於光路36的方向,最好垂直地)有所欲程度的重疊。在一實施例中,如圖5所示,最好陰影遮罩16的各個間隙48可與基板6的條桿42部份重疊,以及基板6的各個間隙44可與陰影遮罩16的條桿46部份重疊。在一更特定的實施例中,條桿42及46可各自與間隙48、44的寬度部份重疊50%。換言之,間隙48、44的50%寬度可與條桿42、46重疊。 At the appropriate time, controller 22 begins to finely position substrate 6, shadow mask 16 or both via Y-theta platform 20A and/or XZ platform 20B to align substrate 6 with shadow mask 16 thereby positioning Each pair of grids 28-30 are in the optical path 36. The grids 28 have at least some of the bars 42 and some of the gaps 48 in the grid 30 (in the direction transverse to the optical path 36, preferably perpendicular). The overlap, and the grid 30, at least some of the bars 46 overlap with some of the gaps 44 in the grid 28 (in the direction transverse to the light path 36, preferably perpendicularly). In one embodiment, as shown in FIG. 5, preferably each gap 48 of the shadow mask 16 may partially overlap the bar 42 of the substrate 6, and the respective gaps 44 of the substrate 6 may be aligned with the bars of the shadow mask 16. 46 partially overlapped. In a more specific embodiment, the bars 42 and 46 can each overlap 50% of the width of the gaps 48, 44, respectively. In other words, the 50% width of the gaps 48, 44 can overlap the bars 42, 46.
對於位在光路36中之一條的每一對格柵28-30,控制器22藉由拿該光路36上之PIN二極體52的數位化輸出(此數位化輸出係經由A/D 54得到以及該數位化輸出對應至穿過間隙48、44的準直光)與一預定值或一預定值範圍做比較來檢測何時條桿42、46各自與間隙48、44重疊至想要的程度。 For each pair of grids 28-30 located in one of the optical paths 36, the controller 22 takes the digitized output of the PIN diode 52 on the optical path 36 (this digital output is obtained via the A/D 54). And the digitized output corresponds to a collimated light passing through the gaps 48, 44) for comparison with a predetermined value or a predetermined range of values to detect when the bars 42, 46 each overlap the gaps 48, 44 to a desired extent.
在檢測出PIN二極體52的數位化輸出不在預定值或預定值範圍內時,控制器22可使一或更多移動平台20A及20B按需要調整基板6、陰影遮罩16或兩者的的X、Y、及/或θ位置,直到控制器22經由PIN二極體52的數位化輸出檢測出條桿42及46各自與格柵對28-30的間隙48及44有所欲重疊數量。由於條桿42及46各自與格柵對28-30間隙48及44的重疊數量會影響準直光到達PIN二極體52的數量,因此藉由比較PIN二極體52的數位化輸出與預定值或預定值範圍,控制器22可判斷條桿與格柵對28-30之間隙在光路36的適當重疊量何時達成。以類似方式,控制器22可判斷條桿與其他每對格柵28-30的間隙在其他每條光路36的適當重疊數量何時達成。 Upon detecting that the digitized output of the PIN diode 52 is not within a predetermined or predetermined range of values, the controller 22 may cause one or more of the mobile platforms 20A and 20B to adjust the substrate 6, shadow mask 16, or both as needed. The X, Y, and/or θ positions until the controller 22 detects the amount of overlap between the bars 42 and 46 and the gaps 48 and 44 of the pair of grids 28-30 via the digitized output of the PIN diode 52. . Since the number of overlaps of the bars 42 and 46 and the pair of grid pairs 28-30 48 and 44 affects the amount of collimated light reaching the PIN diode 52, the digital output and predetermined by comparing the PIN diode 52 are compared. For a value or range of predetermined values, controller 22 can determine when the appropriate amount of overlap of the gap between bar and grid pair 28-30 at optical path 36 is achieved. In a similar manner, controller 22 can determine when the appropriate amount of overlap of the bar with each of the other pairs of grids 28-30 at each of the other optical paths 36 is achieved.
在一實施例中,控制器22最好結合光接收器26A-26D中之所有PIN二極體52的輸出以判斷基板6與陰影遮罩16何時達成適當的X、Y及θ對準。更具體言之,假定控制器22調整基板6、陰影遮罩16或兩者的方位/位置。在經過某一段時間後,控制器22停止調整基板6、陰影遮罩16或兩者的方位/位置,且造成A/D 54取樣及數位化光接收器 26A-26D之PIN二極體52A-52D(圖示於圖4)的輸出。控制器22在控制器22的記憶體中使PIN二極體52A-52D的數位化輸出與變數f1-f4關連,以及基板6、陰影遮罩16或兩者的X、Y及旋轉或角(θ)位移用以下方式來組合該等變數:‧(方程式1)X位移=f1-f2-f3+f4;‧(方程式2)Y位移=f1+f2-f3-f4;以及‧(方程式3)θ位移=f1-f2+f3-f4。 In one embodiment, controller 22 preferably combines the outputs of all of PIN diodes 52 in light receivers 26A-26D to determine when substrate 6 and shadow mask 16 achieve proper X, Y, and θ alignment. More specifically, assume that controller 22 adjusts the orientation/position of substrate 6, shadow mask 16, or both. After a certain period of time, the controller 22 stops adjusting the orientation/position of the substrate 6, the shadow mask 16, or both, and causes the A/D 54 sampling and digitizing the light receiver. The output of the PIN diodes 52A-52D (shown in Figure 4) of 26A-26D. The controller 22 associates the digitized output of the PIN diodes 52A-52D with the variables f1-f4 in the memory of the controller 22, and the X, Y and rotation or angle of the substrate 6, the shadow mask 16, or both ( The θ) displacement combines the variables in the following manner: ‧ (Equation 1) X displacement = f1 - f2 - f3 + f4; ‧ (Equation 2) Y displacement = f1 + f2 - f3 - f4; and ‧ (Equation 3) θ displacement = f1 - f2 + f3 - f4.
在控制器22判斷由以上方程式1-3決定的X、Y及θ位移各等於0時,控制器22認識到此情況對應至基板6及陰影遮罩16有所欲對準。另一方面,如果上述方程式1-3中之任一者不等於0,控制器22體認到此情況對應至基板6及陰影遮罩16沒有所欲對準,於是控制器22使一或更多移動平台20A-20B調整基板6、陰影遮罩16或兩者的X、Y及/或θ位置,按需要造成由以上方程式1-3決定的X位移、Y位移或θ位移各等於0。 When the controller 22 determines that the X, Y, and θ displacements determined by Equations 1-3 above are each equal to 0, the controller 22 recognizes that this corresponds to the alignment of the substrate 6 and the shadow mask 16. On the other hand, if any of the above equations 1-3 is not equal to 0, the controller 22 recognizes that the situation corresponds to the substrate 6 and the shadow mask 16 having no alignment, so the controller 22 makes one or more. The multi-moving platform 20A-20B adjusts the X, Y, and/or θ positions of the substrate 6, the shadow mask 16, or both, and the X, Y, or θ displacements determined by Equations 1-3 above are each equal to zero as needed.
控制器22最好重覆下列步驟:調整基板6、陰影遮罩16或兩者的方位/位置;停止調整基板6、陰影遮罩16或兩者的方位/位置;取樣及數位化PIN二極體52A-52D的輸出;以及判斷由以上方程式1-3決定的X、Y及θ位移是否每個等於0,直到由以上方程式1-3決定的X、Y及θ位移每個實際等於0,該等步驟已出現預定的重覆次數,或已經過預定的時間。 The controller 22 preferably repeats the steps of: adjusting the orientation/position of the substrate 6, the shadow mask 16, or both; stopping the orientation/position of the adjustment substrate 6, the shadow mask 16, or both; sampling and digitizing the PIN diode The outputs of the bodies 52A-52D; and determining whether the X, Y, and θ displacements determined by Equations 1-3 above are each equal to 0, until the X, Y, and θ displacements determined by Equations 1-3 above are each substantially equal to 0, These steps have occurred a predetermined number of repetitions, or a predetermined time has elapsed.
在判斷X、Y及θ位移每個等於0後,控制器22造成移動平台20在Z方向移動使得基板6及陰影遮罩16由圖5 的隔開關係變成密切接觸,此隔開關係的目的係用來對準基板6與陰影遮罩16。 After determining that the X, Y, and θ displacements are each equal to 0, the controller 22 causes the moving platform 20 to move in the Z direction such that the substrate 6 and the shadow mask 16 are as shown in FIG. 5. The spaced relationship becomes intimate contact, the purpose of which is to align the substrate 6 with the shadow mask 16.
不過,不應視為用方程式1-3以上述方式判斷X、Y及θ位移各等於0是要限定本發明,因為可想到的是,每個位移可在對於該位移是獨一或對於該等位移是共同的適當數值範圍內。例如但不受限於,控制器22可經編程為落在±1範圍內的X位移是可接受的,落在±1.5範圍內的Y位移是可接受的,以及落在±0.5範圍內的θ位移是可接受的。替換地,控制器22可經編程為每個位移可使用相同的數值範圍。例如,控制器22可經編程為它可接受X、Y及θ位移中之各者落在±1範圍內。 However, it should not be considered that using Equations 1-3 to determine that X, Y, and θ displacements are each equal to 0 in the manner described above is intended to limit the invention, as it is conceivable that each displacement may be unique to the displacement or for Equal displacements are within a common range of appropriate values. For example and without limitation, the controller 22 can be programmed to have an X displacement that is within a range of ±1 acceptable, a Y displacement that falls within a range of ±1.5, and fall within a range of ±0.5. The θ displacement is acceptable. Alternatively, controller 22 can be programmed to use the same range of values for each displacement. For example, controller 22 can be programmed such that it accepts that each of the X, Y, and θ displacements falls within the range of ±1.
可見,利用光接收器26A-26D之PIN二極體52A-52D的輸出,控制器22可使基板6與陰影遮罩16以高度的準確度處於想要的對準狀態。為此目的,控制器22可累進式改變基板6、陰影遮罩16或兩者的方位/位置,直到基板6的格柵28與陰影遮罩16的格柵30對準至想要的程度。在控制器22判斷基板6與陰影遮罩16需要進一步對準的情形下,由用上述方程式1-3決定的X、Y及θ位移值,控制器22可按需要做出明智的決定讓基板6、陰影遮罩16或兩者在X、Y及θ方向往那個方向移動或旋轉以改善基板6與陰影遮罩16的對準。因此,控制器22可定向/定位基板6、陰影遮罩16或兩者於第一位置,然後取得光接收器26A-26D之PIN二極體52A-52D的輸出以判斷基板6與陰影遮罩16是否適當地對準。若成立,控制器22使基板6與陰影遮罩16在Z方向 進入密切接觸,以準備發生於沉積真空容器4的沉積事件。不過,如果判斷基板6與陰影遮罩16沒有適當地對準,控制器22可累進式改變基板6、陰影遮罩16或兩者的方向/位置至其他位置,在此控制器22取樣光接收器26A-26D之PIN二極體52A-52D的輸出。可繼續取樣光接收器26A-26D之PIN二極體52A-52D的輸出以及累進式改變基板6、陰影遮罩16或兩者的方向/位置的處理,直到控制器22用控制器22的程式判定基板6與陰影遮罩16對準至想要的程度。 It can be seen that with the output of the PIN diodes 52A-52D of the light receivers 26A-26D, the controller 22 can cause the substrate 6 and shadow mask 16 to be in a desired alignment with a high degree of accuracy. To this end, the controller 22 can progressively change the orientation/position of the substrate 6, shadow mask 16, or both until the grid 28 of the substrate 6 is aligned with the grid 30 of the shadow mask 16 to the desired extent. In the case where the controller 22 determines that the substrate 6 and the shadow mask 16 need further alignment, the controller 22 can make an informed decision as needed by the X, Y, and θ displacement values determined by Equations 1-3 above. 6. The shadow mask 16 or both are moved or rotated in that direction in the X, Y, and θ directions to improve alignment of the substrate 6 with the shadow mask 16. Therefore, the controller 22 can orient/position the substrate 6, the shadow mask 16 or both in the first position, and then take the output of the PIN diodes 52A-52D of the light receivers 26A-26D to determine the substrate 6 and the shadow mask. 16 is properly aligned. If so, the controller 22 causes the substrate 6 and the shadow mask 16 to be in the Z direction. Intimate contact is entered to prepare for the deposition event that occurs in the deposition vacuum vessel 4. However, if it is determined that the substrate 6 and the shadow mask 16 are not properly aligned, the controller 22 may progressively change the direction/position of the substrate 6, the shadow mask 16, or both to other locations, where the controller 22 samples the light reception. The outputs of the PIN diodes 52A-52D of the devices 26A-26D. The processing of the PIN diodes 52A-52D of the optical receivers 26A-26D and the process of progressively changing the direction/position of the substrate 6, the shadow mask 16, or both may continue to be sampled until the controller 22 uses the program of the controller 22. It is determined that the substrate 6 is aligned with the shadow mask 16 to a desired extent.
也可見,控制器22使基板6、陰影遮罩16或兩者的方位可被調整,以定位基板6的格柵28與陰影遮罩16的格柵30,或兩者,直到每條光路36上有預定數量的準直光穿過落在該光路36上的格柵以便被對應光接收器26接收。換言之,控制器22精細地定位基板6、陰影遮罩16或兩者,直到每條光路36上有預定數量的光線穿過在該光路中之每個格柵的一或更多圖形100以及被在該光路上的光接收器接收。 It can also be seen that controller 22 can adjust the orientation of substrate 6, shadow mask 16, or both to position grid 28 of substrate 6 and grid 30 of shadow mask 16, or both, until each light path 36 A predetermined amount of collimated light passes through the grid that falls on the optical path 36 for reception by the corresponding optical receiver 26. In other words, the controller 22 finely positions the substrate 6, the shadow mask 16, or both until a predetermined amount of light on each of the optical paths 36 passes through one or more of the patterns 100 in each of the optical paths and is The light receiver on the optical path is received.
請參考圖6,另一示範陰影遮罩對準系統15'的所有方面與圖示於圖2的遮罩對準系統15類似,但以下情形除外:每一對光源24-光接收器26位於基板6及陰影遮罩16的同一側;以及每一對光源24-光接收器26與分束器60一起界定一光路36’。更具體言之,基板6的每個格柵28與陰影遮罩16的每個格柵30位於圖示於圖6之一對光源24-光接收器26的一光路36’中。每條光路36’從一光源24延伸以便被該等分束器60中之一者反射,該等分束器60中之該一者係經由 基板6之陰影遮罩16中與基板6之該格柵28對準的格柵30向基板6之格柵28反射來自光源24的光線。打在基板6之格柵28之一或更多條桿42上的光線有些被該格柵28反射回來通過陰影遮罩16中與該格柵28對準的格柵30之一或更多間隙40朝向分束器60。分束器60使反射自基板6之格柵28在穿過陰影遮罩16中與該格柵28對準之格柵30後的一些光線通過到達在該光路36’之終端的光接收器26。 Referring to Figure 6, all aspects of another exemplary shadow mask alignment system 15' are similar to the mask alignment system 15 illustrated in Figure 2, except that each pair of light sources 24-photoreceiver 26 is located The same side of the substrate 6 and the shadow mask 16; and each pair of light sources 24 - the light receiver 26 and the beam splitter 60 together define an optical path 36'. More specifically, each of the grids 28 of the substrate 6 and each of the grids 30 of the shadow mask 16 are located in an optical path 36' of the light source 24-photoreceptor 26 of Fig. 6. Each of the optical paths 36' extends from a light source 24 for reflection by one of the beam splitters 60, one of the beam splitters 60 being The grid 30 of the shadow mask 16 of the substrate 6 aligned with the grid 28 of the substrate 6 reflects the light from the source 24 to the grid 28 of the substrate 6. Some of the light striking the one or more bars 42 of the grid 28 of the substrate 6 is reflected back by the grid 28 through one or more of the grids 30 of the shadow mask 16 that are aligned with the grid 28. 40 faces the beam splitter 60. The beam splitter 60 causes some of the light rays reflected from the grid 28 of the substrate 6 after passing through the grid 30 aligned with the grid 28 in the shadow mask 16 to reach the light receiver 26 at the end of the light path 36'. .
以上說明假設,光源24-光接收器26對、以及分束器60都位於陰影遮罩16與基板6相反的側面上。不過,可想到的是,光源24-光接收器26對與分束器60可位於基板6的另一面上,然後來自光源24被分束器60反射的光線在被陰影遮罩16之格柵30部份反射之前首先穿過基板6的格柵28,以及被部份反射之該光線向後穿過該格柵28至分束器60的通路係使穿過格柵30的一些反射光線傳遞到光接收器26。因此,位於陰影遮罩16與基板6相反之側面上的光源24-光接收器26對及分束器60的以上圖6說明及圖示不應被視為是要限定本發明。 The above description assumes that both the light source 24-optical receiver 26 pair and the beam splitter 60 are located on the opposite side of the shadow mask 16 from the substrate 6. However, it is conceivable that the light source 24-optical receiver 26 pair and beam splitter 60 may be located on the other side of the substrate 6, and then the light from the source 24 that is reflected by the beam splitter 60 is on the grid of the shadow mask 16. Before the partial reflection, the grating 28 passing through the substrate 6 is first passed, and the light that is partially reflected back through the grating 28 to the beam splitter 60 transmits some reflected light passing through the grating 30 to Light receiver 26. Thus, the light source 24-optical receiver 26 on the opposite side of the shadow mask 16 from the substrate 6 and the above-described Figure 6 of the beam splitter 60 are illustrated and illustrated in the above description and should not be considered as limiting the invention.
此時將描述用遮罩對準系統15’對準有一或更多格柵28的基板6與有一或更多格柵30的陰影遮罩16。 A shadow mask 16 of the substrate 6 with one or more grids 28 and one or more grids 30 aligned with the mask alignment system 15' will now be described.
開始時,移動基板6變成與陰影遮罩16隔開地粗略(或大體)對準。當基板6與陰影遮罩16粗略對準時,基板6的每個格柵28與陰影遮罩16的每個格柵30位在一對光源24-光接收器26的光路36’中。例如,若是遮罩對準系統15’包括各自界定四條光路36A’、36B’、36C’及36D’(也圖示於 圖7)的四對光源-光接收器24A-26A、24B-26B、24C-26C及24D-26D(示意圖示於圖7),以及基板6包括格柵28A、28B、28C及28D,以及陰影遮罩16包括格柵30A、30B、30C及30D:格柵28A及30A位在從光源24A經由分束器60A延伸至光接收器26A的光路36A’中;格柵28B及30B位在從光源24B經由分束器60B延伸至光接收器26B的光路36B’中;格柵26C及30C位在從光源24C經由分束器60C延伸至光接收器26C的光路36C’中;以及格柵28D及30D位在從光源24D經由分束器60D延伸至光接收器26D的光路36D’中。 Initially, the moving substrate 6 becomes roughly (or substantially) aligned with the shadow mask 16. When the substrate 6 is roughly aligned with the shadow mask 16, each of the grids 28 of the substrate 6 and each of the grids 30 of the shadow mask 16 are positioned in a pair of light sources 24 - the optical path 36' of the light receiver 26. For example, if the mask alignment system 15' includes four optical paths 36A', 36B', 36C', and 36D', respectively (also shown Figure 4) four pairs of light sources - light receivers 24A-26A, 24B-26B, 24C-26C and 24D-26D (schematically shown in Figure 7), and substrate 6 including grids 28A, 28B, 28C and 28D, and The shadow mask 16 includes grids 30A, 30B, 30C, and 30D: the grids 28A and 30A are positioned in the optical path 36A' extending from the light source 24A via the beam splitter 60A to the light receiver 26A; the grids 28B and 30B are located in the slave Light source 24B extends into beam path 36B' of light receiver 26B via beam splitter 60B; grids 26C and 30C are located in light path 36C' extending from light source 24C via beam splitter 60C to light receiver 26C; and grid 28D And the 30D bit is in the optical path 36D' that extends from the light source 24D via the beam splitter 60D to the light receiver 26D.
圖7的俯視示意圖圖示與陰影遮罩16粗略對準的基板6,其中圖示光源24A至24D、光接收器26A至26D(以虛線圖示)、分束器60A至60D(以虛線圖示),以及各自用於各對光源-光接收器的光路36A’-36D’。在圖7中,應瞭解,格柵28A及30A位在光路36A’中;格柵28B及30B位在光路36B’中;格柵26C及30C位在光路36C’中;以及格柵28D及30D位在光路36D’中;以及每個格柵28及30包括在說明圖3A至圖3C時提及之可變節距條桿及間隙的一或更多圖形100。 The top plan view of Figure 7 illustrates a substrate 6 roughly aligned with the shadow mask 16, wherein the light sources 24A to 24D, the light receivers 26A to 26D (illustrated in dashed lines), and the beam splitters 60A to 60D (in dotted form) are illustrated Shown, and optical paths 36A'-36D' for each pair of light source-light receivers. In FIG. 7, it should be understood that the grids 28A and 30A are located in the optical path 36A'; the grids 28B and 30B are located in the optical path 36B'; the grids 26C and 30C are located in the optical path 36C'; and the grids 28D and 30D Positioned in optical path 36D'; and each of grids 28 and 30 includes one or more patterns 100 of variable pitch bars and gaps as described with respect to Figures 3A-3C.
請參考圖8,此時描述基板6之一格柵28的單一圖形100與陰影遮罩16之一格柵30的單一圖形100(亦即,一對格柵28-30)沿著一光路36’的精細對準。不過,應瞭解,格柵對28-30之單一圖形100沿著圖8之光路36’的精細對準也可應用於位在各個光路36'的各對格柵28-30之一或更多圖形100的對準。 Referring to FIG. 8, a single pattern 100 of one of the grids 28 of the substrate 6 and a single pattern 100 of one of the grids 30 of the shadow mask 16 (ie, a pair of grids 28-30) are described along an optical path 36. 'The fine alignment. However, it should be understood that the fine alignment of the single pattern 100 of grid pairs 28-30 along the optical path 36' of Figure 8 can also be applied to one or more of each pair of grids 28-30 located in each of the optical paths 36'. Alignment of the graphic 100.
以處於隔開關係的陰影遮罩16與基板6開始,在適當的時間,激活每個光源24以沿著它的光路36’輸出光線。在一非限定性實施例中,每個光源包含輸出光線至準直光學元件/透鏡40的LED 38,準直光學元件/透鏡40係準直由LED 38輸出的光線以及輸出該準直光至至少將由準直光學元件/透鏡40輸出之準直光部份反射至一格柵對28-30的分束器60。 Starting with a shadow mask 16 in spaced relationship with the substrate 6, each light source 24 is activated to output light along its optical path 36' at the appropriate time. In a non-limiting embodiment, each light source includes an LED 38 that outputs light to a collimating optic/lens 40 that collimates light output by LED 38 and outputs the collimated light to At least the collimated light portion output by the collimating optics/lens 40 is reflected to the beam splitter 60 of a grid pair 28-30.
來自分束器60穿過格柵30之一或更多圖形100之間隙48和格柵28之一或更多圖形100之間隙44的準直光對於被格柵28之隔開條桿42反射的光線沒有幫助。不過,格柵28之一或更多圖形100之隔開條桿42所反射的準直光返回穿過格柵30之一或更多圖形100的間隙48以及向分束器60傳播。在分束器60處,反射光至少有一部份穿過分束器60以便被光接收器26接收。 The collimated light from the beam splitter 60 through the gap 48 of one or more of the patterns 100 of the grid 30 and the gap 44 of one or more of the patterns of the grids 28 is reflected by the spaced bars 42 of the grid 28 The light didn't help. However, the collimated light reflected by the spaced bars 42 of one or more of the patterns of the grid 28 returns through the gap 48 of one or more of the patterns 100 of the grid 30 and propagates toward the beam splitter 60. At beam splitter 60, at least a portion of the reflected light passes through beam splitter 60 for reception by light receiver 26.
光接收器26的聚焦光學元件/透鏡50聚集反射光中穿過分束器60朝向形式為PIN二極體52之光檢測構件的部份。提供遮罩對準系統15’的各個光接收器26的各個PIN二極體52的輸出給控制器22(圖示於圖6)的類比至數位(A/D)轉換器54,其係將各個PIN二極體52的類比輸出轉換成對應數位訊號以便被控制器22的處理構件處理。各個PIN二極體52的輸出對應至該PIN二極體52所收到的光量。 The focusing optics/lens 50 of the light receiver 26 concentrates the portion of the reflected light that passes through the beam splitter 60 toward the light detecting member in the form of a PIN diode 52. The output of each PIN diode 52 of each of the light receivers 26 of the mask alignment system 15' is provided to an analog to digital (A/D) converter 54 of the controller 22 (shown in Figure 6), which will The analog output of each PIN diode 52 is converted to a corresponding digital signal for processing by the processing component of controller 22. The output of each PIN diode 52 corresponds to the amount of light received by the PIN diode 52.
在適當的時間,控制器22經由Y-θ平台20A及/或X-Z平台20B開始基板6、陰影遮罩16或兩者的精細定位,以使基板6與陰影遮罩16相互對準,使得對於每條光路 36’,格柵28的一些條桿42與格柵30的一些間隙48有所欲程度的重疊(在橫向,最好垂直於光路36’),反之,格柵30的條桿46至少有一些與格柵28的一些間隙44有所欲程度的重疊(在橫向,最好垂直於光路36’)。在一實施例中,陰影遮罩16的各個間隙48可與基板6的條桿42部份重疊,以及基板6的各個間隙44可與陰影遮罩16的條桿46部份重疊,如圖8所示。在一更特定的實施例中,條桿42及46可各自與間隙48及44的寬度部份重疊有所欲百分比,例如50%。換言之,間隙48及44各自有50%的寬度與條桿42及46重疊。 At the appropriate time, controller 22 initiates fine positioning of substrate 6, shadow mask 16 or both via Y-theta platform 20A and/or XZ platform 20B to align substrate 6 with shadow mask 16 such that Each light path 36', some of the bars 42 of the grille 28 overlap with some of the gaps 48 of the grille 30 (in the lateral direction, preferably perpendicular to the optical path 36'), whereas the bars 46 of the grille 30 have at least some Some of the gaps 44 of the grid 28 overlap to some extent (in the lateral direction, preferably perpendicular to the light path 36'). In an embodiment, the respective gaps 48 of the shadow mask 16 may partially overlap the bars 42 of the substrate 6, and the respective gaps 44 of the substrate 6 may partially overlap the bars 46 of the shadow mask 16, as shown in FIG. Shown. In a more specific embodiment, the bars 42 and 46 may each overlap a portion of the width of the gaps 48 and 44 by a desired percentage, such as 50%. In other words, the gaps 48 and 44 each have a width of 50% overlapping the bars 42 and 46.
對於光路36’中之一條關連的各對格柵28-30,控制器22檢測條桿42何時與間隙48有所欲程度的重疊,其係藉由比較PIN二極體52在該光路36’上的數位化輸出與一預定值或一預定值範圍,其中該數位化輸出係經由A/D 54得到以及該數位化輸出對應至反射自條桿42穿過間隙48的光線。 For each of the pairs of grids 28-30 associated with one of the optical paths 36', the controller 22 detects when the bar 42 overlaps the gap 48 to a desired extent by comparing the PIN diode 52 to the optical path 36'. The digitized output is over a predetermined value or a predetermined range of values, wherein the digitized output is obtained via A/D 54 and the digitized output corresponds to light reflected from the bar 42 through the gap 48.
在檢測PIN二極體52之數位化輸出不等於預定值或不在預定值範圍內時,控制器22使一或更多移動平台20A及/或20B按需要調整基板6、陰影遮罩16或兩者的X、Y及/或θ位置,直到控制器22經由PIN二極體52的數位化輸出檢測到條桿42及46與格柵對28-30的間隙48及44有所欲重疊數量。由於條桿42與格柵對28-30之間隙48的重疊數量影響準直光到達PIN二極體52的數量,藉由比較PIN二極體52之數位化輸出與預定值或預定值範圍,控制器22可確定何時條桿42與和光路36’關連之格柵對28-30的間隙48已實現 適當的重疊數量。用類似方式,控制器22可確定何時條桿42與和其他各個光路36’關連之其他各對格柵28-30的間隙48已實現適當的重疊數量。 When detecting that the digitized output of the PIN diode 52 is not equal to a predetermined value or is not within a predetermined value range, the controller 22 causes the one or more moving platforms 20A and/or 20B to adjust the substrate 6, the shadow mask 16 or both as needed. The X, Y and/or θ position of the controller until the controller 22 detects the desired overlap of the bars 48 and 46 with the gaps 48 and 44 of the pair of grids 28-30 via the digitized output of the PIN diode 52. Since the amount of overlap of the bar 42 and the gap 48 of the grid pair 28-30 affects the amount of collimated light reaching the PIN diode 52, by comparing the digitized output of the PIN diode 52 with a predetermined value or a predetermined range of values, The controller 22 can determine when the bar 42 and the gap 48 of the grille pair 28-30 associated with the optical path 36' have been implemented. The appropriate number of overlaps. In a similar manner, controller 22 can determine when the bar 42 and the gaps 48 of the other pairs of grids 28-30 associated with the other respective optical paths 36' have achieved an appropriate amount of overlap.
在一實施例中,控制器22最好組合光接收器26A至26D之所有PIN二極體52的輸出以確定何時基板6與陰影遮罩16已實現適當的X、Y及θ對準。更具體言之,假定控制器調整基板6、陰影遮罩16或兩者的方位/位置。在經過某一段時間後,控制器停止調整基板6、陰影遮罩16或兩者的方位/位置,以及造成A/D54取樣及數位化光接收器26A至26D之PIN二極體52A至52D(圖示於圖7)的輸出。控制器22使PIN二極體52A至52D的數位化輸出在控制器22記憶體中與變數f1-f4關連以及組合基板6、陰影遮罩16或兩者之X、Y及旋轉或角度(θ)位移的變數,如下:‧(方程式1)X位移=f1-f2-f3+f4;‧(方程式2)Y位移=f1+f2-f3-f4;以及‧(方程式3)θ位移=f1-f2+f3-f4。 In one embodiment, controller 22 preferably combines the outputs of all of PIN diodes 52 of optical receivers 26A through 26D to determine when substrate 6 and shadow mask 16 have achieved proper X, Y, and θ alignment. More specifically, it is assumed that the controller adjusts the orientation/position of the substrate 6, the shadow mask 16, or both. After a certain period of time, the controller stops adjusting the orientation/position of the substrate 6, the shadow mask 16 or both, and the PIN diodes 52A to 52D of the A/D 54 sampling and digitizing light receivers 26A to 26D ( The output shown in Figure 7). The controller 22 causes the digitized outputs of the PIN diodes 52A to 52D to be associated with the variables f1-f4 in the memory of the controller 22 and to combine the substrate 6, the shadow mask 16, or both X, Y, and rotation or angle (θ The variation of the displacement is as follows: ‧ (Equation 1) X displacement = f1 - f2 - f3 + f4; ‧ (Equation 2) Y displacement = f1 + f2 - f3 - f4; and ‧ (Equation 3) θ displacement = f1 F2+f3-f4.
上述方程式1至3為前文在說明第一示範遮罩對準系統15時提及之方程式1至3的副本。 Equations 1 through 3 above are copies of Equations 1 through 3 mentioned above when describing the first exemplary mask alignment system 15.
在控制器22判斷上述方程式1至3所確定的X、Y及θ位移各自等於0時,控制器22認為此狀態對應至有所欲對準的基板6與陰影遮罩16。另一方面,如果上述方程式1至3中之任一者不等於0,控制器22認為此狀態對應至沒有所欲對準的基板6與陰影遮罩16,然後控制器22使一或更多移動平台20A至20B按需要調整基板6、陰影遮罩16或兩者的X、Y及/或θ位置,以造成上述方程式1至3所確定的X位 移、Y位移或θ位移各自等於0。 When the controller 22 determines that the X, Y, and θ displacements determined by the above Equations 1 through 3 are each equal to 0, the controller 22 considers this state to correspond to the substrate 6 and the shadow mask 16 to be aligned. On the other hand, if any of the above equations 1 to 3 is not equal to 0, the controller 22 considers this state to correspond to the substrate 6 and the shadow mask 16 that are not to be aligned, and then the controller 22 makes one or more The mobile platforms 20A-20B adjust the X, Y, and/or θ positions of the substrate 6, the shadow mask 16, or both as needed to cause the X bits determined by Equations 1 through 3 above. The shift, Y displacement, or θ shift are each equal to zero.
控制器22最好重覆下列步驟:調整基板6、陰影遮罩16或兩者的方位/位置;停止基板6、陰影遮罩16或兩者之方位/位置的調整;取樣及數位化PIN二極體52A至52D的輸出;以及判斷上述方程式1至3所確定的X位移、Y位移或θ位移是否各自等於0,直到上述方程式1至3所確定的X、Y及θ位移實際各自等於0;或直到該等步驟已進行預定的重覆次數;或直到已消逝預定的時間數量。 The controller 22 preferably repeats the steps of: adjusting the orientation/position of the substrate 6, the shadow mask 16, or both; stopping the orientation of the substrate 6, the shadow mask 16, or both; sampling and digitizing the PIN II The outputs of the polar bodies 52A to 52D; and determining whether the X displacement, the Y displacement, or the θ displacement determined by the above equations 1 to 3 are each equal to 0 until the X, Y, and θ displacements determined by the above equations 1 to 3 are actually equal to 0 Or until the steps have been repeated for a predetermined number of repetitions; or until a predetermined amount of time has elapsed.
在確定X、Y及θ位移各自等於0時,控制器22使運動平台20B在Z方向移動以使基板6與陰影遮罩16從圖示於圖8處於隔開關係的位置移動變成密切接觸,此隔開關係的目的係用來對準基板6與陰影遮罩16。 When it is determined that the X, Y, and θ displacements are each equal to 0, the controller 22 moves the motion platform 20B in the Z direction to move the substrate 6 and the shadow mask 16 into a close contact from the position illustrated in FIG. 8 in a spaced relationship, The purpose of this separation is to align the substrate 6 with the shadow mask 16.
X、Y及θ位移利用方程式1至3以上述方式判斷是否各自等於0不應被視為是要限定本發明,因為可想到的是,各個位移可在對於該位移是獨一或對於該等位移是共同的適當數值範圍內。例如但不受限於,控制器22可經編程為落在±1範圍內的X位移是可接受的,落在±1.5範圍內的Y位移是可接受的,以及落在±0.5範圍內的θ位移是可接受的。替換地,控制器22可經編程為每個位移可使用相同的數值範圍。例如,控制器22可經編程為它可接受X、Y及θ位移中之各者落在±1範圍內。 The X, Y, and θ displacements using Equations 1 through 3 to determine whether each is equal to 0 in the manner described above should not be considered as limiting the invention, as it is conceivable that the individual displacements may be unique to the displacement or for such The displacements are within a common range of appropriate values. For example and without limitation, the controller 22 can be programmed to have an X displacement that is within a range of ±1 acceptable, a Y displacement that falls within a range of ±1.5, and fall within a range of ±0.5. The θ displacement is acceptable. Alternatively, controller 22 can be programmed to use the same range of values for each displacement. For example, controller 22 can be programmed such that it accepts that each of the X, Y, and θ displacements falls within the range of ±1.
可見,利用光接收器26A至26D之PIN二極體52A至52D的輸出,控制器22可使基板6與陰影遮罩16以高度準確地處於所欲對準狀態。為此目的,控制器22可累進式改變基板6、陰影遮罩16或兩者的方位/位置,直到基板6的格柵28與陰影遮罩16的格柵30有所欲程度的對準。在控制器 22判斷基板6與陰影遮罩16需要進一步對準的情形下,由用上述方程式1-3決定的X、Y及θ位移值,控制器22可按需要做出明智的決定讓基板6、陰影遮罩16或兩者在X、Y及θ方向往那個方向移動或旋轉以改善基板6與陰影遮罩16的對準。因此,控制器22可定向/定位基板6、陰影遮罩16或兩者於第一位置,然後取得光接收器26A-26D之PIN二極體52A-52D的輸出以判斷基板6與陰影遮罩16是否適當地對準。若成立,控制器22使基板6與陰影遮罩16在Z方向進入密切接觸,以準備發生於沉積真空容器4的沉積事件。不過,如果判斷基板6與陰影遮罩16沒有適當地對準,控制器22可累進式改變基板6、陰影遮罩16或兩者的方向/位置至其他位置,在此控制器22取樣光接收器26A-26D之PIN二極體52A-52D的輸出。可繼續取樣光接收器26A-26D之PIN二極體52A-52D的輸出以及累進式改變基板6、陰影遮罩16或兩者的方向/位置的處理,直到控制器22用控制器22的程式確定基板6與陰影遮罩16有所欲程度的對準。 It can be seen that with the outputs of the PIN diodes 52A to 52D of the light receivers 26A to 26D, the controller 22 can cause the substrate 6 and the shadow mask 16 to be highly accurately aligned. To this end, the controller 22 can progressively change the orientation/position of the substrate 6, shadow mask 16, or both until the grid 28 of the substrate 6 is in a desired degree of alignment with the grid 30 of the shadow mask 16. In the controller 22 In the case where it is judged that the substrate 6 and the shadow mask 16 need further alignment, by the X, Y and θ displacement values determined by the above equations 1-3, the controller 22 can make an sensible decision as needed to make the substrate 6, the shadow The mask 16 or both are moved or rotated in that direction in the X, Y and θ directions to improve alignment of the substrate 6 with the shadow mask 16. Therefore, the controller 22 can orient/position the substrate 6, the shadow mask 16 or both in the first position, and then take the output of the PIN diodes 52A-52D of the light receivers 26A-26D to determine the substrate 6 and the shadow mask. 16 is properly aligned. If so, the controller 22 brings the substrate 6 into close contact with the shadow mask 16 in the Z direction to prepare for the deposition event that occurs in the deposition vacuum vessel 4. However, if it is determined that the substrate 6 and the shadow mask 16 are not properly aligned, the controller 22 may progressively change the direction/position of the substrate 6, the shadow mask 16, or both to other locations, where the controller 22 samples the light reception. The outputs of the PIN diodes 52A-52D of the devices 26A-26D. The processing of the PIN diodes 52A-52D of the optical receivers 26A-26D and the process of progressively changing the direction/position of the substrate 6, the shadow mask 16, or both may continue to be sampled until the controller 22 uses the program of the controller 22. It is determined that the substrate 6 is in a desired degree of alignment with the shadow mask 16.
進一步可見,控制器22使基板6、陰影遮罩16或兩者的方位被調整成可定位基板6的格柵28與陰影遮罩16的格柵30或兩者,直到每條光路36’上有預定數量的反射光穿過對應分束器60以便被對應光接收器26接收。換言之,控制器精細定位基板6、陰影遮罩16或兩者,直到被各個格柵28之條桿42反射的光線有預定數量穿過各個格柵30的間隙48及分束器60以便被對應光接收器26接收。 Further, the controller 22 causes the orientation of the substrate 6, the shadow mask 16, or both to be adjusted to position the grid 28 of the substrate 6 and the grid 30 of the shadow mask 16 or both, up to each of the optical paths 36'. A predetermined amount of reflected light passes through the corresponding beam splitter 60 for reception by the corresponding light receiver 26. In other words, the controller finely positions the substrate 6, the shadow mask 16 or both until the light rays reflected by the bars 42 of the respective grids 28 have a predetermined number of passes through the gaps 48 of the respective grids 30 and the beam splitter 60 to be corresponding The optical receiver 26 receives.
如圖8所示,在遮罩對準系統15’中,光源24A至24D各自與光接收器26A至26D一樣位於陰影遮罩16的同一側。用作為光束組合器(beam combiner)的分束器60(圖示成 45度的小面)光學組合每對光源24-光接收器26。 As shown in Fig. 8, in the mask alignment system 15', the light sources 24A to 24D are each located on the same side of the shadow mask 16 as the light receivers 26A to 26D. Used as a beam combiner beam splitter 60 (illustrated as A 45 degree facet) optically combines each pair of light sources 24-optical receiver 26.
每個光接收器26經定位成其光軸垂直於陰影遮罩16及基板6而且位於陰影遮罩16中與基板6相反的側面。不過,這不應被視為是要限定本發明。 Each of the light receivers 26 is positioned such that its optical axis is perpendicular to the shadow mask 16 and the substrate 6 and is located on the opposite side of the shadow mask 16 from the substrate 6. However, this should not be construed as limiting the invention.
在圖示於圖8的配置中,來自分束器60的光線穿過陰影遮罩16之一或更多圖形100的間隙48,以及至少被基板6之一或更多圖形100的條桿42部份反射,而來自分束器60的其餘光線穿過基板6之一或更多圖形100的間隙44。被基板6之一或更多圖形100之條桿42反射的光線再度穿過陰影遮罩16之一或更多圖形100的間隙48,然後至少部份通過分束器60以便被光接收器26接收。 In the configuration illustrated in FIG. 8, light from the beam splitter 60 passes through the gap 48 of one or more of the graphics 100 of the shadow mask 16, and at least the bar 42 of the one or more graphics 100 of the substrate 6. Partial reflections, while the remaining light from the beam splitter 60 passes through the gap 44 of one or more of the patterns 100 of the substrate 6. Light reflected by the bar 42 of one or more of the graphics 100 of the substrate 6 passes through the gap 48 of one or more of the graphics 100 of the shadow mask 16 and then at least partially passes through the beam splitter 60 to be received by the optical receiver 26. receive.
包括準直光學元件/透鏡40的光源24經定位成對於包含聚焦光學元件/透鏡50的光接收器26呈橫向,最好呈垂直。分束器60放在光源24及光接收器26之光軸的交點,以及分束器60的平面經定向成可直角平分光源24及光接收器26的軸線。以此方式,來自光源24的準直光被90度反射,然後反射光第一次傳播通過陰影遮罩16格柵30之一或更多圖形100的間隙48以打到基板6格柵28之條桿42的朝下表面以及至少被陰影遮罩16格柵30之一或更多圖形100的條桿42朝下表面部份反射。被格柵28之條桿42反射的光線第二次穿過陰影遮罩16之一或更多圖形100的間隙48,然後部份穿過分束器60以便被光接收器26的PIN二極體52接收。因此,光接收器26之PIN二極體52所收到的光量和陰影遮罩16之格柵30之一或更多圖形100的間隙48與基板6之格柵28之一或更多圖形100的條桿42的重疊程度成正比。因此,遮罩對準15’以反射模式進行對準感測。這與以透射模式進行對 準感測的上述遮罩對準系統15成對比。 Light source 24, including collimating optics/lens 40, is positioned transverse to the light receiver 26 comprising focusing optics/lens 50, preferably perpendicular. The beam splitter 60 is placed at the intersection of the optical axes of the light source 24 and the light receiver 26, and the plane of the beam splitter 60 is oriented to bisect the axis of the light source 24 and the light receiver 26 at right angles. In this manner, the collimated light from source 24 is reflected at 90 degrees, and then the reflected light propagates through the gap 48 of one or more of the patterns 100 of the shadow mask 16 grid 30 for the first time to strike the substrate 6 grid 28 The downwardly facing surface of the bar 42 and the bar 42 of at least one or more of the graphics 100 of the shadow mask 16 grid 30 are partially reflected toward the lower surface. The light reflected by the bar 42 of the grid 28 passes through the gap 48 of one or more of the patterns 100 of the shadow mask 16 for a second time, and then partially passes through the beam splitter 60 to be PIN diode of the light receiver 26. 52 received. Thus, the amount of light received by the PIN diode 52 of the light receiver 26 and the gap 48 of one or more of the patterns 100 of the grid 30 of the shadow mask 16 and one or more of the grids 28 of the substrate 6 are 100 The degree of overlap of the bars 42 is proportional. Therefore, the mask alignment 15' performs alignment sensing in the reflective mode. This is done in transmissive mode The above-described mask alignment system 15 of the quasi-sensing is compared.
熟諳此藝者應瞭解,有些光量被丟掉,因為由於分束器60的部份反射及部份透射而使用部份光線。不難了解,使用準直光學元件/透鏡40以及分束器60為極化分束器可說明分束器60的無效率。 Those skilled in the art should understand that some of the amount of light is lost because some of the light is used due to partial reflection and partial transmission of the beam splitter 60. It is not difficult to understand that the use of the collimating optics/lens 40 and the beam splitter 60 as a polarizing beam splitter can illustrate the inefficiency of the beam splitter 60.
在遮罩對準系統15’的上述具體實施例中,每一對光源24-光接收器26與每個對應分束器60位於陰影遮罩16中與基板6相反的側面。不過,這不應被視為是要限定本發明,因為可想到的是,該對光源24-光接收器26中之一、或更多或所有和各個對應分束器60可位於基板6中與陰影遮罩16相反的側面,亦即,在基板6的另一面上。在此具體實施例中,來自各個分束器60的光線會首先穿過基板6的間隙44以便被陰影遮罩16的條桿46反射,然後反射光會再度穿過基板6的間隙44以便隨後穿過分束器60以便被光接收器26接收。 In the above-described embodiment of the mask alignment system 15', each pair of light sources 24-optical receivers 26 and each corresponding beam splitter 60 are located on opposite sides of the shadow mask 16 from the substrate 6. However, this should not be seen as limiting the invention, as it is conceivable that one of the pair of light sources 24-optical receivers 26, or more or all and each of the respective beam splitters 60 may be located in the substrate 6. The side opposite the shadow mask 16, that is, on the other side of the substrate 6. In this particular embodiment, light from each beam splitter 60 will first pass through the gap 44 of the substrate 6 to be reflected by the bar 46 of the shadow mask 16, and then the reflected light will again pass through the gap 44 of the substrate 6 for subsequent It passes through beam splitter 60 to be received by light receiver 26.
已用數個示範具體實施例來描述本發明。顯然閱讀及理解以上詳細說明後可想出修改及變更。希望本發明被解釋成可涵蓋只要落入隨附請求項或其等價陳述之範疇內的所有修改及變更。 The invention has been described in terms of several exemplary embodiments. Obviously, modifications and changes can be made after reading and understanding the above detailed description. It is intended that the present invention be construed as covering all such modifications and modifications as falling within the scope of the appended claims.
6‧‧‧基板 6‧‧‧Substrate
28A-28D‧‧‧格柵 28A-28D‧‧‧ Grille
32‧‧‧中央部份 32‧‧‧Central Part
42‧‧‧條桿 42‧‧‧ rods
44‧‧‧間隙;狹縫 44‧‧‧ gap; slit
100-1、100-2、100-3‧‧‧圖形 100-1, 100-2, 100-3‧‧‧ graphics
102‧‧‧第一端 102‧‧‧ first end
104‧‧‧第二端 104‧‧‧ second end
Claims (20)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/812,076 US9580792B2 (en) | 2010-06-04 | 2015-07-29 | Shadow mask alignment using variable pitch coded apertures |
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| TW201704506A true TW201704506A (en) | 2017-02-01 |
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| TW105104805A TW201704506A (en) | 2015-07-29 | 2016-02-18 | Shadow mask alignment technique using variable pitch coding aperture |
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| CN (1) | CN106399932B (en) |
| TW (1) | TW201704506A (en) |
| WO (1) | WO2017019126A1 (en) |
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Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211489A (en) * | 1978-01-16 | 1980-07-08 | Rca Corporation | Photomask alignment system |
| JPS59220922A (en) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | Method of positioning for electron beam transcription |
| US20040086639A1 (en) * | 2002-09-24 | 2004-05-06 | Grantham Daniel Harrison | Patterned thin-film deposition using collimating heated mask asembly |
| US20050006223A1 (en) * | 2003-05-07 | 2005-01-13 | Robert Nichols | Sputter deposition masking and methods |
| JP2008293798A (en) * | 2007-05-24 | 2008-12-04 | Toyota Industries Corp | Manufacturing method of organic EL element |
| US7657999B2 (en) * | 2007-10-08 | 2010-02-09 | Advantech Global, Ltd | Method of forming an electrical circuit with overlaying integration layer |
| US9122172B2 (en) * | 2010-06-04 | 2015-09-01 | Advantech Global, Ltd | Reflection shadow mask alignment using coded apertures |
| WO2011153016A1 (en) * | 2010-06-04 | 2011-12-08 | Advantech Global, Ltd. | Shadow mask alignment using coded apertures |
| CN103019052B (en) * | 2011-09-23 | 2015-10-21 | 中芯国际集成电路制造(北京)有限公司 | Photoetching alignment mark and comprise its mask plate and semiconductor wafer |
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2016
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