TWI621231B - Chip package structure manufacturing method and substrate structure - Google Patents
Chip package structure manufacturing method and substrate structure Download PDFInfo
- Publication number
- TWI621231B TWI621231B TW105141151A TW105141151A TWI621231B TW I621231 B TWI621231 B TW I621231B TW 105141151 A TW105141151 A TW 105141151A TW 105141151 A TW105141151 A TW 105141151A TW I621231 B TWI621231 B TW I621231B
- Authority
- TW
- Taiwan
- Prior art keywords
- break
- trench
- groove
- solder resist
- layer
- Prior art date
Links
Classifications
-
- H10W74/019—
-
- H10W70/60—
Landscapes
- Structure Of Printed Boards (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
一種晶片封裝結構的製作方法與基板結構,其中製作方法包括以下步驟。首先,提供載板,且載板包括基材與連接基材的離型膜。接著,形成疊層結構層於離型膜上,並圖案化疊層結構,以形成貫穿至少部分疊層結構的預斷溝槽,其中預斷溝槽位於疊層結構的邊緣,且將疊層結構劃分為晶片設置部與預斷部。接著,設置晶片於晶片設置部上。接著,形成封裝膠體於晶片設置部上,並包覆晶片。之後,沿預斷溝槽斷開預斷部與晶片設置部,並透過預斷部移除離型膜與基材。A manufacturing method of a chip package structure and a substrate structure, wherein the manufacturing method includes the following steps. First, a carrier board is provided, and the carrier board includes a substrate and a release film connected to the substrate. Next, a laminated structure layer is formed on the release film, and the laminated structure is patterned to form a pre-break groove that runs through at least a part of the laminated structure, wherein the pre-break groove is located at the edge of the laminated structure and divides the laminated structure. A part and a pre-break part are provided for the wafer. Next, a wafer is set on the wafer setting portion. Next, an encapsulant is formed on the wafer setting portion and covers the wafer. After that, the pre-break portion and the wafer setting portion are disconnected along the pre-break groove, and the release film and the substrate are removed through the pre-break portion.
Description
本發明是有關於一種封裝結構的製作方法與基板結構,且特別是有關於一種晶片封裝結構的製作方法與基板結構。The invention relates to a manufacturing method and a substrate structure of a packaging structure, and more particularly to a manufacturing method and a substrate structure of a chip packaging structure.
目前,在可撓性載板上製作完成晶片封裝結構後,需進一步將可撓性載板移除,以得到晶片封裝結構。由於晶片封裝結構與可撓性載板是透過離型膜彼此接合,且離型膜的黏著力並不高,因此在施加適度的作用力於離型膜後,便能使晶片封裝結構與可撓性載板分離開來。由於離型膜夾置於晶片封裝結構與可撓性載板之間,且為避免損及晶片與線路的所在區域,因此施力點通常靠近晶片封裝結構及/或可撓性載板的側緣。一般來說,晶片封裝結構的周緣齊平可撓性載板的周緣,故不利於施力,且一有不慎便可能對晶片封裝結構造成損傷。At present, after the chip package structure is fabricated on the flexible carrier board, the flexible carrier board needs to be further removed to obtain the chip package structure. Because the chip packaging structure and the flexible carrier board are bonded to each other through a release film, and the adhesive force of the release film is not high, after applying a moderate force to the release film, the chip package structure and the The flexible carrier is separated. Since the release film is clamped between the chip packaging structure and the flexible carrier board, and in order to avoid damaging the area of the chip and the circuit, the application point is usually near the side of the chip packaging structure and / or the flexible carrier board. edge. Generally, the periphery of the chip package structure is flush with the periphery of the flexible carrier board, so it is not conducive to applying force, and the chip package structure may be damaged if it is inadvertent.
本發明提供一種晶片封裝結構的製作方法與基板結構,能提高製程上的便利性與良率。The invention provides a method for manufacturing a chip package structure and a substrate structure, which can improve the convenience and yield of a process.
本發明提出一種晶片封裝結構的製作方法,包括以下步驟。首先,提供載板,且載板包括基材與連接基材的離型膜。接著,形成疊層結構層於離型膜上,並圖案化疊層結構,以形成貫穿至少部分疊層結構的預斷溝槽,其中預斷溝槽位於疊層結構的邊緣,且將疊層結構劃分為晶片設置部與預斷部。接著,設置晶片於晶片設置部上。接著,形成封裝膠體於晶片設置部上,並包覆晶片。之後,沿預斷溝槽斷開預斷部與晶片設置部,並透過預斷部移除離型膜與基材。The invention provides a method for manufacturing a chip package structure, which includes the following steps. First, a carrier board is provided, and the carrier board includes a substrate and a release film connected to the substrate. Next, a laminated structure layer is formed on the release film, and the laminated structure is patterned to form a pre-break groove that runs through at least a part of the laminated structure, wherein the pre-break groove is located at the edge of the laminated structure and divides the laminated structure. A part and a pre-break part are provided for the wafer. Next, a wafer is set on the wafer setting portion. Next, an encapsulant is formed on the wafer setting portion and covers the wafer. After that, the pre-break portion and the wafer setting portion are disconnected along the pre-break groove, and the release film and the substrate are removed through the pre-break portion.
在本發明的一實施例中,上述的形成疊層結構於離型膜上,並圖案化疊層結構,以形成貫穿至少部分疊層結構的預斷溝槽的步驟包括形成第一防焊層於離型膜上,並圖案化第一防焊層,以形成貫穿第一防焊層的第一溝槽,且第一溝槽暴露出離型膜。接著,形成導電層於第一防焊層上,並圖案化導電層,以形成貫穿導電層的第二溝槽,且第二溝槽與第一溝槽相對準。之後,形成第二防焊層於導電層上,並圖案化第二防焊層,以形成貫穿第二防焊層的第三溝槽,且第三溝槽與第二溝槽相對準。預斷溝槽由第一溝槽、第二溝槽以及第三溝槽所組成。In an embodiment of the present invention, the step of forming the laminated structure on the release film and patterning the laminated structure to form a pre-break trench that penetrates at least part of the laminated structure includes forming a first solder resist layer on the release film. The first solder resist is patterned on the release film to form a first trench penetrating the first solder resist, and the first trench exposes the release film. Next, a conductive layer is formed on the first solder resist layer, and the conductive layer is patterned to form a second trench penetrating the conductive layer, and the second trench is aligned with the first trench. After that, a second solder resist layer is formed on the conductive layer, and the second solder resist layer is patterned to form a third trench penetrating the second solder resist layer, and the third trench is aligned with the second trench. The pre-breaking trench is composed of a first trench, a second trench, and a third trench.
在本發明的一實施例中,上述的預斷部包括部分第一防焊層、部分導電層以及部分第二防焊層。In an embodiment of the present invention, the pre-breaking portion includes a part of the first solder resist layer, a part of the conductive layer, and a part of the second solder resist layer.
在本發明的一實施例中,上述的形成疊層結構於離型膜上,並圖案化疊層結構,以形成貫穿至少部分疊層結構的預斷溝槽的步驟包括形成第一防焊層於離型膜上。接著,設置核心層於第一防焊層上。接著,形成導電層於核心層上,並圖案化導電層,以形成貫穿導電層的第一溝槽,且第一溝槽暴露出核心層。接著,形成第二防焊層於導電層上,並圖案化第二防焊層,以形成貫穿第二防焊層的第二溝槽,且第二溝槽與第一溝槽相對準。預斷溝槽由第一溝槽與第二溝槽所組成。In an embodiment of the present invention, the step of forming the laminated structure on the release film and patterning the laminated structure to form a pre-break trench that penetrates at least part of the laminated structure includes forming a first solder resist layer on the release film. On the release film. Next, a core layer is disposed on the first solder resist layer. Next, a conductive layer is formed on the core layer, and the conductive layer is patterned to form a first trench penetrating the conductive layer, and the first trench exposes the core layer. Next, a second solder resist layer is formed on the conductive layer, and the second solder resist layer is patterned to form a second trench penetrating the second solder resist layer, and the second trench is aligned with the first trench. The pre-breaking trench is composed of a first trench and a second trench.
在本發明的一實施例中,上述的預斷部包括部分導電層與部分第二防焊層。In an embodiment of the present invention, the pre-breaking portion includes a part of the conductive layer and a part of the second solder resist layer.
在本發明的一實施例中,上述的預斷溝槽將第一防焊層與核心層劃分為與晶片設置部相重疊的第一部分以及與預斷部相重疊的第二部分。當沿預斷溝槽斷開預斷部與晶片設置部,並透過預斷部移除離型膜與基材時,第一部分與第二部分被斷開,使第二部分隨離型膜與基材被移除。In an embodiment of the present invention, the pre-break groove described above divides the first solder resist layer and the core layer into a first portion overlapping the wafer setting portion and a second portion overlapping the pre-break portion. When the pre-break part and the wafer setting part are disconnected along the pre-break groove, and the release film and the substrate are removed through the pre-break part, the first part and the second part are disconnected, so that the second part follows the release film and the substrate. Removed.
在本發明的一實施例中,上述的形成貫穿至少部分疊層結構的預斷溝槽的步驟包括使預斷溝槽自疊層結構的第一側邊延伸至與第一側邊相連接的第二側邊。In an embodiment of the present invention, the step of forming the pre-break trenches penetrating through the at least partially laminated structure includes extending the pre-break trenches from a first side edge of the stacked structure to a second side connected to the first side edge. Side.
在本發明的一實施例中,上述的預斷溝槽具有相對兩端部,且兩端部分別與第一側邊及第二側邊保持距離。In an embodiment of the present invention, the pre-breaking groove has opposite ends, and the ends are respectively spaced from the first side and the second side.
在本發明的一實施例中,上述的形成貫穿至少部分疊層結構的預斷溝槽的步驟包括使預斷溝槽自疊層結構的第一側邊延伸至與第一側邊互為平行的第二側邊。In an embodiment of the present invention, the step of forming the pre-break trenches penetrating through the at least part of the stacked structure includes extending the pre-break trenches from the first side of the stacked structure to the first side parallel to the first side. Two sides.
本發明提出一種基板結構,其包括載板以及疊層結構。載板包括基材與連接基材的離型膜。疊層結構設置於離型膜上,其中疊層結構具有預斷溝槽,預斷溝槽位於疊層結構的邊緣,且將疊層結構劃分為晶片設置部與預斷部。The invention provides a substrate structure, which includes a carrier plate and a laminated structure. The carrier board includes a substrate and a release film connecting the substrate. The stacked structure is disposed on a release film, wherein the stacked structure has a pre-break groove, the pre-break groove is located at an edge of the stacked structure, and the stacked structure is divided into a wafer setting portion and a pre-break portion.
在本發明的一實施例中,上述的疊層結構包括第一防焊層、導電層以及第二防焊層。第一防焊層設置於離型膜上,其中第一防焊層具有第一溝槽,且第一溝槽暴露出離型膜。導電層設置於第一防焊層上,其中導電層具有第二溝槽,且第二溝槽與第一溝槽相對準。第二防焊層設置於導電層上,其中第二防焊層具有第三溝槽,第三溝槽與第二溝槽相對準,且預斷溝槽由第一溝槽、第二溝槽以及第三溝槽所組成。In an embodiment of the present invention, the above-mentioned laminated structure includes a first solder resist layer, a conductive layer, and a second solder resist layer. The first solder resist layer is disposed on the release film, wherein the first solder resist layer has a first groove, and the first groove exposes the release film. The conductive layer is disposed on the first solder resist layer, wherein the conductive layer has a second trench, and the second trench is aligned with the first trench. The second solder mask layer is disposed on the conductive layer, wherein the second solder mask layer has a third trench, the third trench is aligned with the second trench, and the pre-breaking trench is composed of the first trench, the second trench, and Composed of a third groove.
在本發明的一實施例中,上述的疊層結構包括第一防焊層、核心層、導電層以及第二防焊層。第一防焊層設置於離型膜上。核心層設置於第一防焊層上。導電層設置於核心層上,其中導電層具有第一溝槽,且第一溝槽暴露出核心層。第二防焊層設置於導電層上,其中第二防焊層具有第二溝槽,第二溝槽與第一溝槽相對準,且預斷溝槽由第一溝槽與第二溝槽所組成。In an embodiment of the present invention, the above-mentioned laminated structure includes a first solder resist layer, a core layer, a conductive layer, and a second solder resist layer. The first solder resist is disposed on the release film. The core layer is disposed on the first solder resist layer. The conductive layer is disposed on the core layer, wherein the conductive layer has a first trench, and the first trench exposes the core layer. The second solder mask layer is disposed on the conductive layer, wherein the second solder mask layer has a second groove, the second groove is aligned with the first groove, and the pre-break groove is formed by the first groove and the second groove. composition.
在本發明的一實施例中,上述的疊層結構具有第一側邊以及與第一側邊相連接的第二側邊,且預斷溝槽自第一側邊延伸至第二側邊。In an embodiment of the present invention, the above-mentioned laminated structure has a first side edge and a second side edge connected to the first side edge, and the pre-break groove extends from the first side edge to the second side edge.
在本發明的一實施例中,上述的疊層結構具有第一側邊以及與第一側邊互為平行的第二側邊,且預斷溝槽自第一側邊延伸至第二側邊。In an embodiment of the present invention, the above-mentioned laminated structure has a first side edge and a second side edge parallel to the first side edge, and the pre-break groove extends from the first side edge to the second side edge.
基於上述,在形成疊層結構於載板上以製作出基板結構的過程中,本發明於疊層結構形成有貫穿其至少部分的預斷溝槽。藉此,於晶片封裝結構製作完成後,可透過預斷溝槽將載板移除。因此,本發明所提出的晶片封裝結構的製作方法與基板結構不僅能提高製程上的便利性,也能避免於移除載板時對晶片封裝結構造成損傷以提高製程上的良率。Based on the above, in the process of forming a laminated structure on a carrier plate to fabricate a substrate structure, the present invention forms a pre-break groove in the laminated structure through at least part of the groove. Thereby, after the fabrication of the chip package structure is completed, the carrier board can be removed through the pre-break groove. Therefore, the manufacturing method and the substrate structure of the chip packaging structure provided by the present invention can not only improve the convenience of the manufacturing process, but also avoid damage to the chip packaging structure when the carrier is removed to improve the yield of the manufacturing process.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
圖1A至圖1E是本發明第一實施例的晶片封裝結構的製作過程的剖面示意圖。請參考圖1A,首先,提供載板110,其中載板110包括基材111與連接基材111的離型膜112,且基材111可以聚酯(PET)、或聚亞醯胺(PI)等材質所製成的可撓性基材,用以作為暫時性的承載。然而,本發明對於基材的材質不加以限定,在其他實施例中,基材可為硬質基材。在本實施例中,離型膜112可為上表面112a與下表面112b皆具有黏性的薄膜,其中離型膜112的下表面112b貼附於基材111,且離型膜112的上表面112a暴露於外,以供後續黏合疊層結構120(繪示於圖1C)所用。1A to 1E are schematic cross-sectional views illustrating a manufacturing process of a chip package structure according to a first embodiment of the present invention. Please refer to FIG. 1A. First, a carrier board 110 is provided. The carrier board 110 includes a substrate 111 and a release film 112 connecting the substrate 111. The substrate 111 may be polyester (PET) or polyurethane (PI). Flexible substrate made of other materials, used as a temporary load. However, the present invention does not limit the material of the substrate. In other embodiments, the substrate may be a rigid substrate. In this embodiment, the release film 112 may be a thin film having an upper surface 112a and a lower surface 112b, wherein the lower surface 112b of the release film 112 is attached to the substrate 111, and the upper surface of the release film 112 is 112a is exposed for subsequent bonding of the laminated structure 120 (shown in FIG. 1C).
接著,形成第一防焊層121於離型膜112的上表面112a上。在使第一防焊層121黏附於離型膜112後,可透過沖壓、蝕刻或雷射切割等方式圖案化第一防焊層121,以形成貫穿第一防焊層121的第一溝槽121a,且第一溝槽121a暴露出離型膜112的上表面112a。請參考圖1B,接著,形成導電層122於第一防焊層121上,其中導電層122的材質可為銅、其他導電金屬或合金,且可透過沖壓、蝕刻或雷射切割等方式圖案化導電層122,以形成貫穿導電層122的第二溝槽122a。在本實施例中,第二溝槽122a與第一溝槽121a相對準。請參考圖1C,之後,形成第二防焊層123於導電層122上,並可透過沖壓、蝕刻或雷射切割等方式圖案化第二防焊層123,以形成貫穿第二防焊層123的第三溝槽123a,且第三溝槽123a與第二溝槽122a相對準。至此,基板結構101已製作完成,其中彼此對準的第一溝槽121a、第二溝槽122a以及第三溝槽123a組成預斷溝槽102,且由第一防焊層121、導電層122以及第二防焊層123所組成的疊層結構120被預斷溝槽102貫穿而暴露出離型膜112的上表面112a。Next, a first solder resist layer 121 is formed on the upper surface 112 a of the release film 112. After the first solder resist layer 121 is adhered to the release film 112, the first solder resist layer 121 may be patterned by means of stamping, etching, or laser cutting to form a first trench penetrating the first solder resist layer 121. 121a, and the first groove 121a exposes the upper surface 112a of the release film 112. Please refer to FIG. 1B. Next, a conductive layer 122 is formed on the first solder resist layer 121. The material of the conductive layer 122 can be copper, other conductive metals or alloys, and can be patterned by stamping, etching or laser cutting. The conductive layer 122 forms a second trench 122 a penetrating the conductive layer 122. In this embodiment, the second groove 122a is aligned with the first groove 121a. Referring to FIG. 1C, a second solder resist layer 123 is formed on the conductive layer 122, and the second solder resist layer 123 can be patterned by stamping, etching, or laser cutting to form a second solder resist layer 123. The third trench 123a is aligned with the second trench 122a. So far, the substrate structure 101 has been completed. The first trenches 121a, the second trenches 122a, and the third trenches 123a aligned with each other constitute a pre-break trench 102, and the first solder resist layer 121, the conductive layer 122, and The laminated structure 120 composed of the second solder resist layer 123 is penetrated by the pre-break groove 102 to expose the upper surface 112 a of the release film 112.
在本實施例中,預斷溝槽102位於疊層結構120的邊緣,且將疊層結構120劃分為晶片設置部125與預斷部126。圖2A與圖2B分別是圖1C的基板結構的兩實施態樣的俯視示意圖。請參考圖2A,在其一實施態樣中,疊層結構120具有第一側邊127以及與第一側邊127相連接的第二側邊128,其中預斷溝槽102自第一側邊127延伸至第二側邊128,且傾斜於第一側邊127與第二側邊128。預斷溝槽102具有相對兩端部,且兩端部分別與第一側邊127及第二側邊128保持距離。在其他實施例中,預斷溝槽的相對兩端部可分別貫通第一側邊與第二側邊。請參考圖2B,在另一實施態樣中,疊層結構120具有第一側邊127以及與第一側邊127互為平行的第二側邊129,其中預斷溝槽102自第一側邊127延伸至第二側邊129,且垂直於第一側邊127與第二側邊129。預斷溝槽102具有相對兩端部,且兩端部分別與第一側邊127及第二側邊129保持距離。In this embodiment, the pre-break groove 102 is located at an edge of the stacked structure 120, and the stacked structure 120 is divided into a wafer setting portion 125 and a pre-break portion 126. 2A and 2B are schematic top views of two embodiments of the substrate structure of FIG. 1C, respectively. Please refer to FIG. 2A. In one embodiment, the laminated structure 120 has a first side edge 127 and a second side edge 128 connected to the first side edge 127. The pre-break groove 102 is formed from the first side edge 127. It extends to the second side edge 128 and is inclined to the first side edge 127 and the second side edge 128. The pre-break groove 102 has two opposite ends, and the two ends are spaced apart from the first side 127 and the second side 128 respectively. In other embodiments, the two opposite ends of the pre-break groove may penetrate the first side and the second side, respectively. Please refer to FIG. 2B. In another embodiment, the laminated structure 120 has a first side edge 127 and a second side edge 129 parallel to the first side edge 127. The pre-break groove 102 is formed from the first side edge. 127 extends to the second side edge 129 and is perpendicular to the first side edge 127 and the second side edge 129. The pre-breaking trench 102 has two opposite ends, and the two ends are respectively spaced from the first side 127 and the second side 129.
請參考圖1D,接著,設置晶片130於晶片設置部125上的第二防焊層123,舉例來說,雖未繪示於圖式,惟圖案化後的第二防焊層123可具有多個開口以暴露出圖案化後的導電層122的局部,因此晶片130可透過打線接合或覆晶接合等方式電性連接於圖案化後的導電層122。接著,形成封裝膠體140於晶片設置部125上的第二防焊層123,並包覆晶片130。特別說明的是,雖然本實施例僅舉單一顆晶片作說明,但不限於此。在其他實施例中,可使多個晶片設置於晶片設置部上,並使封裝膠體共同包覆前述多個晶片。Please refer to FIG. 1D. Next, a second solder mask layer 123 on the wafer mounting portion 125 is disposed on the wafer 130. For example, although not shown in the drawings, the patterned second solder mask layer 123 may have multiple layers. The two openings expose parts of the patterned conductive layer 122, so the chip 130 can be electrically connected to the patterned conductive layer 122 by wire bonding or flip-chip bonding. Next, a second solder mask layer 123 of the encapsulant 140 is formed on the wafer setting portion 125 and covers the wafer 130. It is particularly noted that although this embodiment only uses a single wafer for description, it is not limited thereto. In other embodiments, a plurality of wafers can be set on the wafer setting portion, and the aforementioned gel can be collectively covered by the encapsulating gel.
請參考圖1D與圖1E,在本實施例中,預斷部126包括部分第一防焊層121、部分導電層122以及部分第二防焊層123,最後,以預斷部126為施力點並沿預斷溝槽102斷開預斷部126與晶片設置部125,使預斷部126、離型膜112以及基材111同時被移除,以使晶片封裝結構100與載板110分離。由於預斷部126可作為移除載板110的施力點,因此不僅能提高製程上的便利性,也能避免於移除載板110時對晶片封裝結構100造成損傷以提高製程上的良率。Please refer to FIG. 1D and FIG. 1E. In this embodiment, the pre-break part 126 includes a part of the first solder resist layer 121, a part of the conductive layer 122, and a part of the second solder resist layer 123. Finally, the pre-break part 126 is used as a force point and The pre-breaking portion 126 and the wafer setting portion 125 are disconnected along the pre-breaking groove 102, so that the pre-breaking portion 126, the release film 112, and the substrate 111 are removed at the same time, so that the chip packaging structure 100 is separated from the carrier board 110. Since the pre-breaking part 126 can be used as a force point for removing the carrier board 110, it can not only improve the convenience of the process, but also avoid damage to the chip packaging structure 100 when the carrier board 110 is removed to improve the yield of the process. .
圖3A至圖3F是本發明第二實施例的晶片封裝結構的製作過程的剖面示意圖。請參考圖3A,首先,提供載板210,其中載板210包括基材211與連接基材211的離型膜212,且基材211可以聚酯(PET)、或聚亞醯胺(PI)等材質所製成的可撓性基材。然而,本發明對於基材的材質不加以限定,在其他實施例中,基材可為硬質基材。在本實施例中,離型膜212可為上表面212a與下表面212b皆具有黏性的薄膜,其中離型膜212的下表面212b貼附於基材211,且離型膜212的上表面212a暴露於外,以供後續黏合疊層結構220(繪示於圖3D)所用。3A to 3F are schematic cross-sectional views of a manufacturing process of a chip package structure according to a second embodiment of the present invention. Please refer to FIG. 3A. First, a carrier board 210 is provided. The carrier board 210 includes a substrate 211 and a release film 212 connecting the substrate 211. The substrate 211 can be polyester (PET) or polyurethane (PI). Flexible substrate made of other materials. However, the present invention does not limit the material of the substrate. In other embodiments, the substrate may be a rigid substrate. In this embodiment, the release film 212 may be a thin film having an upper surface 212a and a lower surface 212b, wherein the lower surface 212b of the release film 212 is attached to the substrate 211, and the upper surface of the release film 212 is 212a is exposed for subsequent bonding of the laminated structure 220 (shown in FIG. 3D).
接著,形成第一防焊層221於離型膜212的上表面212a上。在使第一防焊層221黏附於離型膜212後,設置核心層224於第一防焊層221上。請參考圖3C,接著,形成導電層222於核心層224上,其中導電層222的材質可為銅、其他導電金屬或合金,且可透過沖壓、蝕刻或雷射切割等方式圖案化導電層222,以形成貫穿導電層222的第一溝槽222a,且第一溝槽222a暴露出核心層224。請參考圖3D,之後,形成第二防焊層223於導電層222上,並可透過沖壓、蝕刻或雷射切割等方式圖案化第二防焊層223,以形成貫穿第二防焊層223的第二溝槽223a,且第二溝槽223a與第一溝槽222a相對準。至此,基板結構201已製作完成,其中彼此對準的第一溝槽222a與第二溝槽223a組成預斷溝槽202,且由第一防焊層221、核心層224、導電層222以及第二防焊層223組成疊層結構220。此外,導電層222與第二防焊層223被預斷溝槽202貫穿而暴露出核心層224。Next, a first solder resist layer 221 is formed on the upper surface 212 a of the release film 212. After the first solder resist layer 221 is adhered to the release film 212, a core layer 224 is disposed on the first solder resist layer 221. Please refer to FIG. 3C. Next, a conductive layer 222 is formed on the core layer 224. The material of the conductive layer 222 can be copper, other conductive metals or alloys, and the conductive layer 222 can be patterned by stamping, etching or laser cutting. To form a first trench 222a penetrating the conductive layer 222, and the first trench 222a exposes the core layer 224. Referring to FIG. 3D, a second solder resist layer 223 is formed on the conductive layer 222, and the second solder resist layer 223 can be patterned by stamping, etching, or laser cutting to form a second solder resist layer 223. The second trench 223a is aligned with the first trench 222a. So far, the substrate structure 201 has been completed. The first trench 222a and the second trench 223a aligned with each other constitute the pre-break trench 202, and the first solder resist layer 221, the core layer 224, the conductive layer 222, and the second The solder resist layer 223 constitutes a laminated structure 220. In addition, the conductive layer 222 and the second solder resist layer 223 are penetrated by the pre-break trench 202 to expose the core layer 224.
在本實施例中,預斷溝槽202位於疊層結構220的邊緣,且將疊層結構220劃分為晶片設置部225與預斷部226。圖4A與圖4B分別是圖3D的基板結構的兩實施態樣的俯視示意圖。請參考圖4A,在其一實施態樣中,疊層結構220具有第一側邊227以及與第一側邊227相連接的第二側邊228,其中預斷溝槽202自第一側邊227延伸至第二側邊228,且傾斜於第一側邊227與第二側邊228。預斷溝槽202具有相對兩端部,且兩端部分別與第一側邊227及第二側邊228保持距離。在其他實施例中,預斷溝槽的相對兩端部可分別貫通第一側邊與第二側邊。In this embodiment, the pre-break groove 202 is located at an edge of the stacked structure 220, and the stacked structure 220 is divided into a wafer setting portion 225 and a pre-break portion 226. 4A and 4B are schematic top views of two embodiments of the substrate structure of FIG. 3D, respectively. Please refer to FIG. 4A. In one embodiment, the laminated structure 220 has a first side edge 227 and a second side edge 228 connected to the first side edge 227. The pre-break groove 202 is formed from the first side edge 227. It extends to the second side edge 228 and is inclined to the first side edge 227 and the second side edge 228. The pre-breaking trench 202 has two opposite ends, and the two ends are respectively spaced from the first side 227 and the second side 228. In other embodiments, the two opposite ends of the pre-break groove may penetrate the first side and the second side, respectively.
請參考圖4B,在另一實施態樣中,疊層結構220具有第一側邊227以及與第一側邊227互為平行的第二側邊229,其中預斷溝槽202自第一側邊227延伸至第二側邊229,且垂直於第一側邊227與第二側邊229。預斷溝槽202具有相對兩端部,且兩端部分別與第一側邊227及第二側邊229保持距離。在其他實施例中,預斷溝槽的相對兩端部可分別貫通第一側邊與第二側邊。Please refer to FIG. 4B. In another embodiment, the stacked structure 220 has a first side edge 227 and a second side edge 229 parallel to the first side edge 227, wherein the pre-break groove 202 is formed from the first side edge. 227 extends to the second side edge 229 and is perpendicular to the first side edge 227 and the second side edge 229. The pre-breaking trench 202 has two opposite ends, and the two ends are respectively spaced from the first side 227 and the second side 229. In other embodiments, the two opposite ends of the pre-break groove may penetrate the first side and the second side, respectively.
請參考圖3E,接著,設置晶片230於晶片設置部225上的第二防焊層223,舉例來說,雖未繪示於圖式,惟圖案化後的第二防焊層223可具有多個開口以暴露出圖案化後的導電層222的局部,因此晶片230可透過打線接合或覆晶接合等方式電性連接於圖案化後的導電層222。接著,形成封裝膠體240於晶片設置部225上的第二防焊層223,並包覆晶片230。Please refer to FIG. 3E. Next, the second solder resist layer 223 of the wafer 230 is disposed on the wafer setting portion 225. For example, although not shown in the drawings, the patterned second solder resist layer 223 may have a large number of layers. The two openings expose parts of the patterned conductive layer 222. Therefore, the chip 230 can be electrically connected to the patterned conductive layer 222 through wire bonding or flip-chip bonding. Next, a second solder resist layer 223 of the encapsulant 240 on the wafer setting portion 225 is formed and covers the wafer 230.
請參考圖3E與圖3F,在本實施例中,預斷部226包括部分導電層222與部分第二防焊層223,且預斷溝槽202將第一防焊層221與核心層224劃分為與晶片設置部225相重疊的第一部分225a以及與預斷部226相重疊的第二部分226a。最後,以預斷部226為施力點並沿預斷溝槽202斷開預斷部226與晶片設置部225,以及斷開第一部分225a與第二部分226a,使預斷部226、第二部分226a、離型膜212以及基材211同時被移除,以使晶片封裝結構200與載板210分離。由於預斷部226可作為移除載板210的施力點,因此不僅能提高製程上的便利性,也能避免於移除載板210時對晶片封裝結構200造成損傷以提高製程上的良率。在本實施例中,預斷溝槽202的深度為暴露出核心層224。在其他實施例中,預斷溝槽可進一步貫穿核心層或者貫穿核心層及相對應的第一防焊層,上述皆為本發明可實施的態樣。Please refer to FIG. 3E and FIG. 3F. In this embodiment, the pre-break part 226 includes a part of the conductive layer 222 and a part of the second solder resist layer 223, and the pre-break trench 202 divides the first solder resist layer 221 and the core layer 224 into and A first portion 225 a overlapping the wafer setting portion 225 and a second portion 226 a overlapping the pre-break portion 226. Finally, the pre-breaking portion 226 is used as a force point and the pre-breaking portion 226 and the wafer setting portion 225 are disconnected along the pre-breaking groove 202, and the first portion 225a and the second portion 226a are disconnected, so that the pre-breaking portion 226, the second portion 226a, and the The mold film 212 and the substrate 211 are removed at the same time to separate the chip package structure 200 from the carrier 210. Since the pre-breaking portion 226 can be used as a force point for removing the carrier plate 210, it can not only improve the convenience of the process, but also avoid damage to the chip packaging structure 200 when the carrier plate 210 is removed to improve the yield of the process. . In this embodiment, the depth of the pre-break trench 202 is such that the core layer 224 is exposed. In other embodiments, the pre-break groove may further penetrate the core layer or the core layer and the corresponding first solder resist layer. The foregoing are all aspects that can be implemented by the present invention.
圖5是本發明第三實施例的基板結構封裝有多個晶片的剖面示意圖。請參考圖5,基板結構101a與第一實施例的基板結構101大致相似,惟基板結構101a的長度較長,以便於設置多個晶片130於其上。詳細而言,這些晶片130設置於晶片設置部125上的第二防焊層123,舉例來說,雖未繪示於圖式,惟圖案化後的第二防焊層123可具有多個開口以暴露出圖案化後的導電層122的局部,因此這些晶片130可透過打線接合或覆晶接合等方式電性連接於圖案化後的導電層122。接著,形成封裝膠體140於晶片設置部125上的第二防焊層123,以包覆這些晶片130。最後,以預斷部126為施力點並沿預斷溝槽102斷開預斷部126與晶片設置部125,使預斷部126、離型膜112以及基材111同時被移除。相似地,第二實施例的基板結構201的尺寸也可加大,而在其上封裝多個晶片230。FIG. 5 is a schematic cross-sectional view of a substrate structure packaged with a plurality of wafers according to a third embodiment of the present invention. Referring to FIG. 5, the substrate structure 101 a is substantially similar to the substrate structure 101 of the first embodiment, except that the substrate structure 101 a has a longer length, so that a plurality of wafers 130 can be disposed thereon. In detail, the wafers 130 are disposed on the second solder mask layer 123 on the wafer setting portion 125. For example, although not shown in the drawings, the patterned second solder mask layer 123 may have multiple openings. Since a part of the patterned conductive layer 122 is exposed, these wafers 130 can be electrically connected to the patterned conductive layer 122 through wire bonding or flip-chip bonding. Next, a second solder mask layer 123 is formed on the chip mounting portion 125 to encapsulate the chips 130. Finally, the pre-breaking portion 126 is used as a force point and the pre-breaking portion 126 and the wafer setting portion 125 are disconnected along the pre-breaking groove 102, so that the pre-breaking portion 126, the release film 112, and the substrate 111 are removed at the same time. Similarly, the size of the substrate structure 201 of the second embodiment can be increased, and a plurality of wafers 230 are packaged thereon.
綜上所述,在形成疊層結構於載板上以製作出基板結構的過程中,本發明於疊層結構形成有貫穿其至少部分的預斷溝槽,以將疊層結構劃分為晶片設置部與預斷部。藉此,於晶片封裝結構製作完成後,可沿預斷溝槽斷開預斷部與晶片設置部,並透過預斷部移將載板移除。因此,本發明所提出的晶片封裝結構的製作方法與基板結構不僅能提高製程上的便利性,也能避免於移除載板時對晶片封裝結構造成損傷以提高製程上的良率。In summary, in the process of forming a laminated structure on a carrier plate to fabricate a substrate structure, the present invention forms a pre-break groove in the laminated structure to penetrate at least part of the laminated structure to divide the laminated structure into a wafer setting portion. With the pre-break section. Thereby, after the fabrication of the chip package structure is completed, the pre-break part and the chip setting part can be disconnected along the pre-break groove, and the carrier board can be removed through the pre-break part. Therefore, the manufacturing method and the substrate structure of the chip packaging structure provided by the present invention can not only improve the convenience of the manufacturing process, but also avoid damage to the chip packaging structure when the carrier is removed to improve the yield of the manufacturing process.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
100、200‧‧‧晶片封裝結構100, 200‧‧‧ chip package structure
101、101a、201‧‧‧基板結構101, 101a, 201‧‧‧ substrate structure
102、202‧‧‧預斷溝槽102, 202‧‧‧pre-break groove
110、210‧‧‧載板110, 210‧‧‧ carrier board
111、211‧‧‧基材111, 211‧‧‧ substrate
112、212‧‧‧離型膜112, 212‧‧‧ release film
112a、212a‧‧‧上表面112a, 212a‧‧‧ Top surface
112b、212b‧‧‧下表面112b, 212b‧‧‧ lower surface
120、220‧‧‧疊層結構120, 220‧‧‧ stacked structure
121、221‧‧‧第一防焊層121, 221‧‧‧ first solder mask
121a、222a‧‧‧第一溝槽121a, 222a‧‧‧First groove
122、222‧‧‧導電層122, 222‧‧‧ conductive layer
122a、223a‧‧‧第二溝槽122a, 223a‧‧‧Second groove
123、223‧‧‧第二防焊層123, 223‧‧‧Second solder mask
123a‧‧‧第三溝槽123a‧‧‧Third groove
125、225‧‧‧晶片設置部125, 225‧‧‧ Wafer Setting Department
126、226‧‧‧預斷部126, 226‧‧‧Pre-break section
127、227‧‧‧第一側邊127, 227‧‧‧ First side
128、129、228、229‧‧‧第二側邊128, 129, 228, 229‧‧‧ second side
130、230‧‧‧晶片130, 230‧‧‧ chips
140、240‧‧‧封裝膠體140, 240‧‧‧ encapsulated colloid
224‧‧‧核心層224‧‧‧Core layer
225a‧‧‧第一部分225a‧‧‧Part I
226a‧‧‧第二部分226a‧‧‧Part Two
圖1A至圖1E是本發明第一實施例的晶片封裝結構的製作過程的剖面示意圖。 圖2A與圖2B分別是圖1C的基板結構的兩實施態樣的俯視示意圖。 圖3A至圖3F是本發明第二實施例的晶片封裝結構的製作過程的剖面示意圖。 圖4A與圖4B分別是圖3D的基板結構的兩實施態樣的俯視示意圖。 圖5是本發明第三實施例的基板結構封裝有多個晶片的剖面示意圖。1A to 1E are schematic cross-sectional views illustrating a manufacturing process of a chip package structure according to a first embodiment of the present invention. 2A and 2B are schematic top views of two embodiments of the substrate structure of FIG. 1C, respectively. 3A to 3F are schematic cross-sectional views of a manufacturing process of a chip package structure according to a second embodiment of the present invention. 4A and 4B are schematic top views of two embodiments of the substrate structure of FIG. 3D, respectively. FIG. 5 is a schematic cross-sectional view of a substrate structure packaged with a plurality of wafers according to a third embodiment of the present invention.
Claims (20)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105141151A TWI621231B (en) | 2016-12-13 | 2016-12-13 | Chip package structure manufacturing method and substrate structure |
| CN201710146934.XA CN108615686B (en) | 2016-12-13 | 2017-03-13 | Manufacturing method and substrate structure of chip package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105141151A TWI621231B (en) | 2016-12-13 | 2016-12-13 | Chip package structure manufacturing method and substrate structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI621231B true TWI621231B (en) | 2018-04-11 |
| TW201822326A TW201822326A (en) | 2018-06-16 |
Family
ID=62640142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105141151A TWI621231B (en) | 2016-12-13 | 2016-12-13 | Chip package structure manufacturing method and substrate structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108615686B (en) |
| TW (1) | TWI621231B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200935564A (en) * | 2007-10-26 | 2009-08-16 | Du Pont | Multi-layer chip carrier and process for making |
| TW201410096A (en) * | 2012-08-27 | 2014-03-01 | 臻鼎科技股份有限公司 | Chip package substrate and structure and manufacturing method thereof |
| TW201539678A (en) * | 2014-01-24 | 2015-10-16 | 台灣積體電路製造股份有限公司 | Packaging semiconductor device and method of forming packaged semiconductor device |
| TW201639093A (en) * | 2015-04-17 | 2016-11-01 | 台灣積體電路製造股份有限公司 | Separated polymer in fan-out package |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6794273B2 (en) * | 2002-05-24 | 2004-09-21 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
| CN102083282B (en) * | 2009-11-27 | 2012-11-21 | 富葵精密组件(深圳)有限公司 | Method for manufacturing printed circuit board (PCB) |
| US8975157B2 (en) * | 2012-02-08 | 2015-03-10 | Advanced Semiconductor Engineering, Inc. | Carrier bonding and detaching processes for a semiconductor wafer |
-
2016
- 2016-12-13 TW TW105141151A patent/TWI621231B/en active
-
2017
- 2017-03-13 CN CN201710146934.XA patent/CN108615686B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200935564A (en) * | 2007-10-26 | 2009-08-16 | Du Pont | Multi-layer chip carrier and process for making |
| TW201410096A (en) * | 2012-08-27 | 2014-03-01 | 臻鼎科技股份有限公司 | Chip package substrate and structure and manufacturing method thereof |
| TW201539678A (en) * | 2014-01-24 | 2015-10-16 | 台灣積體電路製造股份有限公司 | Packaging semiconductor device and method of forming packaged semiconductor device |
| TW201639093A (en) * | 2015-04-17 | 2016-11-01 | 台灣積體電路製造股份有限公司 | Separated polymer in fan-out package |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201822326A (en) | 2018-06-16 |
| CN108615686B (en) | 2020-06-09 |
| CN108615686A (en) | 2018-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI567897B (en) | Thin fan-out stacked chip package and its manufacturing method | |
| KR101997487B1 (en) | High density film for ic package | |
| TWI585910B (en) | Fan-out type back-to-back wafer stack package structure and manufacturing method thereof | |
| KR101473093B1 (en) | Semiconductor device and manufacturing method thereof | |
| CN102956511B (en) | Manufacturing method of semiconductor package structure | |
| US20170243841A1 (en) | Method of manufacturing printed circuit board | |
| US9578750B2 (en) | Package carrier and manufacturing method thereof | |
| KR20190099731A (en) | Method of fabricating semiconductor package including reinforcement top die | |
| US9842794B2 (en) | Semiconductor package with integrated heatsink | |
| TWI456715B (en) | Chip package structure and method of manufacturing same | |
| JP2011049560A (en) | Integrated circuit structure, and method of forming the same | |
| US9842758B2 (en) | Package structure and fabrication method thereof | |
| CN107546186B (en) | Substrate, semiconductor package including the same, and method of manufacturing the same | |
| CN108364919A (en) | Chip package structure and chip package structure array | |
| CN109712941A (en) | Substrat structure, the semiconductor package comprising substrat structure, and the semiconductor technology of manufacture semiconductor package | |
| TWI594382B (en) | Electronic package and its manufacturing method | |
| CN110071048A (en) | Semiconductor packages and the method for manufacturing the semiconductor packages | |
| JP2010232471A (en) | Semiconductor device manufacturing method and semiconductor device | |
| TW201606970A (en) | Semiconductor device and method of manufacturing same | |
| TWI642145B (en) | Semiconductor package substrate and method of manufacturing same | |
| KR20140060390A (en) | Land structure for semiconductor package and manufacturing method thereof, semiconductor package and manufacturing method thereof | |
| TW200805590A (en) | Semiconductor package and fabrication method thereof | |
| CN104167369B (en) | Manufacturing method of chip packaging structure | |
| JP4357278B2 (en) | Integrated circuit die fabrication method | |
| TWI621231B (en) | Chip package structure manufacturing method and substrate structure |