TWI616981B - Substrate structure - Google Patents

Abstract

A substrate structure comprises a first dielectric material layer, a second dielectric material layer, a first wire layer, a second wire layer, a first conductive pillar layer and a second conductive pillar layer. The first wire layer is partially embedded in the first dielectric material layer. The first conductive pillar layer is embedded in the second dielectric material layer and disposed between the first wire layer and the second wire layer, and has a first conductive pillar. The second conductive pillar layer is disposed on the second wire layer and has a second conductive pillar. The first wire layer and the second wire layer are electrically connected by the first conductive pillar layer. The second conductive pillar is a 导电-type conductive pillar, a ┬-type conductive pillar or a +-type conductive pillar.

Description

Substrate structure

The present invention relates to a substrate structure, and more particularly to a semiconductor substrate structure.

In a new generation of electronic products, users are not only pursuing thinner and lighter, but also demanding versatility and high performance. Therefore, electronics manufacturers must accommodate more electronic components in a limited area of an integrated circuit (IC) to achieve high density and miniaturization requirements. Accordingly, electronics manufacturers have developed new packaging technologies such as Flip-Chip, Chip Scale Package (CSP), wafer-level packaging, and 3D Package technology.

However, in applications such as digital, analog, memory, and radio frequency, electronic circuits with different functions have different requirements and results. Therefore, products that integrate different functions on a single die are not optimized products. solution. System-on-a-chip (SOC), System-in-Package (SiP), PiP (Package-in-Package), Package-on-Package (PoP), and With the rapid development of Chip Scale Package (CSP) technology, the most efficient system chips in recent years should be oriented in a single package structure, by leveraging the multi-dimensional space architecture, integrating heterogeneity technology and different voltage operating environments. Grains of various functions. Therefore, the current system wafer package has been oriented toward the three-dimensional packaging technology, and the three-dimensional packaging technology can integrate the die, the package and the passive component into a package, which can be a solution for the system package.

Although the conventional multi-layer stacked package architecture can control the interlayer height by using a rigid conductor as a shelf support, this method of controlling the level on the process is quite difficult. In contrast, if a solder ball is used as a shelf support, although it can be light Easily solve the problem of level control, but there are problems with high restrictions, especially it will be easy to press the upper substrate onto the lower layer. In addition, in the traditional three-dimensional architecture, the more multi-layer architecture represents the more system modules that operate, and the waste heat generated by each component operation will have a multiplier effect, which in turn makes the traditional multi-layer stacked package architecture heat dissipation. The effect is very poor.

All the factors mentioned in the previous paragraph will affect the reliability of the three-dimensional packaging technology, and greatly reduce the yield of the packaging process, resulting in a substantial increase in cost. Therefore, how to provide a substrate structure having rigidity and heat dissipation and satisfying a high yield is an urgent problem to be solved in the industry.

It is an object of the present invention to provide a substrate structure. The substrate structure comprises a first dielectric material layer, a second dielectric material layer, a first wire layer, a second wire layer, a first conductive pillar layer and a second conductive pillar layer. The first wire layer is partially embedded in the first dielectric material layer. The first conductive pillar layer is embedded in the second dielectric material layer and disposed between the first wire layer and the second wire layer, and has at least one first conductive pillar. The second conductive pillar layer is disposed on the second wire layer and has at least one second conductive pillar. The first wire layer and the second wire layer are electrically connected by the at least one first conductive pillar. The at least one second conductive pillar is a 导电-type conductive pillar, a ┬-type conductive pillar or a +-type conductive pillar.

In summary, the substrate structure of the present invention utilizes a relatively simple fabrication process to form different types of conductive pillars, and these conductive pillars are used as a shelf support, thereby replacing the conventional multilayer stacked package architecture. Accordingly, the substrate structure of the present invention can reduce the thickness of the multi-layer stacked package structure while increasing rigidity and heat dissipation, and has high yield. As a result, the processing time of the substrate structure can be shortened and the manufacturing cost can be greatly reduced.

Other objects, advantages, and technical means and embodiments of the present invention will become apparent to those skilled in the <RTIgt;

1, 2, 3, 4‧‧‧ substrate structure

11, 21, 31, 41‧‧‧ dielectric material layer

11a, 21a, 31a‧‧‧ first dielectric material layer

11b, 21b, 31b‧‧‧ second dielectric material layer

21c, 31c, 31c'‧‧‧ third dielectric material layer

13‧‧‧First wire layer

15‧‧‧First conductive column

17‧‧‧Second wire layer

19A, 19B, 23A, 23B‧‧‧ conductive columns

61‧‧‧Loading board

Fig. 1 is a schematic view showing the structure of a substrate according to a first embodiment of the present invention.

Fig. 2 is a schematic view showing the structure of a substrate of a second embodiment of the present invention.

Fig. 3 is a schematic view showing the structure of a substrate of a third embodiment of the present invention.

Fig. 4 is a schematic view showing the structure of a substrate of a fourth embodiment of the present invention.

Fig. 5 is a flow chart showing a method of fabricating a substrate structure according to a fifth embodiment of the present invention.

6A to 6G are schematic views showing the fabrication of the substrate structure of the fifth embodiment of the present invention.

Fig. 7 is a flow chart showing a method of fabricating a substrate structure according to a sixth embodiment of the present invention.

8A to 8B are views showing the fabrication of the substrate structure of the sixth embodiment of the present invention.

Figure 9 is a flow chart showing a method of fabricating a substrate structure according to a seventh embodiment of the present invention.

10A to 10B are views showing the fabrication of the substrate structure of the seventh embodiment of the present invention.

Figure 11 is a schematic view showing another fabrication of the substrate structure of the seventh embodiment of the present invention.

Figure 12 is a flow chart for forming a layer of dielectric material.

The present invention is not limited by the embodiment, and the embodiment of the present invention is not intended to limit the invention to any specific environment, application or special mode as described in the embodiments. Therefore, the description of the embodiments is merely illustrative of the invention and is not intended to limit the invention. It should be noted that, in the following embodiments and drawings, components that are not directly related to the present invention have been omitted and are not shown; and the dimensional relationships between the components in the drawings are merely for ease of understanding and are not intended to limit the actual ratio.

A first embodiment of the present invention, as shown in Fig. 1, is a schematic view of a substrate structure 1. The substrate structure 1 comprises a dielectric material layer 11, a first wire layer 13, a second wire layer 17, a first conductive pillar layer 15, and a second conductive pillar layer. The dielectric material layer 11 has a first dielectric material layer 11a and a second dielectric material layer 11b. The first conductive pillar layer 15 has a plurality of conductive pillars; similarly, the second conductive pillar layer has a plurality of conductive pillars 19A, 19B. The first wire layer 13 is embedded in the first dielectric material layer 11a and the second dielectric material layer 11b.

The dielectric material layer 11 is a Molding Compound layer having a Novolac-based Resin, an Epoxy-based Resin, a Silicone-based Resin or the like. Suitable mold compounds, but not limited to this. Further, in the present embodiment, the first conductive pillar layer 15 has five conductive pillars; the second conductive pillar layer has four conductive pillars 19A and five conductive pillars 19B. However, in other embodiments, the first conductive pillar layer 15 and the second conductive pillar layer may have any number of conductive pillars respectively according to different uses and types of the substrate structure 1, and the conductive pillars not described in this embodiment are not used. The number is limited.

The first conductive pillar layer 15 is embedded in the second dielectric material layer 11b and disposed between the first conductive layer 13 and the second conductive layer 17; meanwhile, the first conductive pillar layer 15 is electrically connected to the first conductive layer 13 and a second wire layer 17. The conductive pillars 19A, 19B of the second conductive pillar layer are disposed on the second wire layer 17; meanwhile, the conductive pillars 19A, 19B of the second conductive pillar layer are electrically connected to the second wire layer 17. In the present embodiment, as shown in the longitudinal section, the conductive pillar 19A of the second conductive pillar layer is a 导电-type conductive pillar, and the conductive pillar 19B of the second conductive pillar layer is a gate-type conductive pillar, and the ┴ type The conductive pillars and the oral conductive pillars are, for example, a single structure made of electroplated copper. The conductive pillar 19A is visually formed as a two-stage (or stepped) conductive pillar to form a ┴-type conductive pillar, and the conductive pillar 19B is visually formed as a block-shaped conductive pillar to form a slab-shaped conductive pillar. .

A second embodiment of the present invention, as shown in FIG. 2, is a schematic view of a substrate structure 2. One of the structures of the substrate structure 2 is similar to the structure of the substrate structure 1 of the first embodiment of the present invention, except that the dielectric material layer 21 is different from the dielectric material layer 11 of the substrate structure 1 in the substrate structure 2; The second conductive pillar layer has a plurality of conductive pillars 23A, 23B. In detail, the dielectric material layer 21 has a first dielectric material layer 21a, a second dielectric material layer 21b, and a third dielectric material layer 21c. The second conductive layer 17 is embedded in the dielectric material layer 21, and the second conductive pillar layer is guided. The posts 23A, 23B are partially embedded in the dielectric material layer 21. In this embodiment, as shown in the longitudinal section, the conductive pillar 23A of the second conductive pillar layer is a +-type conductive pillar, and the conductive pillar 23B of the second conductive pillar layer is a conductive pillar of the type, and the type is + The conductive pillars and the 导电-type conductive pillars are, for example, a single structure made of electroplated copper.

A third embodiment of the present invention, as shown in FIG. 3, is a schematic view of a substrate structure 3. One of the structures of the substrate structure 3 is similar to the structure of the substrate structure 1 described in the first embodiment of the present invention, with the difference that in the substrate structure 3, the dielectric material layer 31 is different from the dielectric material layer 11 of the substrate structure 1. In detail, the dielectric material layer 31 has a first dielectric material layer 31a, a second dielectric material layer 31b, and a third dielectric material layer 31c. The conductive pillars 19A of the second conductive layer and the second conductive pillars are embedded in the third dielectric material layer 31c, and the conductive pillars 19B of the second conductive pillars are partially embedded in the third dielectric material layer 31c. Inside. Similar to the substrate structure 1 of the first embodiment, in the present embodiment, as shown in the longitudinal section, the conductive pillar 19A of the second conductive pillar layer is a conductive pillar and the second conductive pillar is electrically conductive. The column 19B is a port-type conductive column, and the 导电-type conductive column and the port-shaped conductive column are, for example, a single structure made of electroplated copper.

A fourth embodiment of the present invention, as shown in FIG. 4, is a schematic view of a substrate structure 4. One of the structures of the substrate structure 4 is similar to the structure of the substrate structure 1 described in the first embodiment of the present invention, with the difference that in the substrate structure 4, the dielectric material layer 41 is different from the dielectric material layer 11 of the substrate structure 1. In detail, the dielectric material layer 41 has a first dielectric material layer 31a, a second dielectric material layer 31b, and a third dielectric material layer 31c'. The second conductive layer 17 is embedded in the third dielectric material layer 31c'. The conductive pillars 19A and 19B of the second conductive pillar layer are partially embedded in the third dielectric material layer 31c'. Similar to the substrate structure 1 of the first embodiment, in the present embodiment, as shown in the longitudinal section, the conductive pillar 19A of the second conductive pillar layer is a conductive pillar; the conductive layer of the second conductive pillar The column 19B is a port-type conductive column, and the 导电-type conductive column and the port-shaped conductive column are, for example, a single structure made of electroplated copper.

A fifth embodiment of the present invention is shown in Fig. 5, which is a flow chart of a method of fabricating a substrate structure. The manufacturing method described in this embodiment can be used to fabricate a substrate structure, such as the substrate structure 1 described in the first embodiment. The following will be through Fig. 5 and Figs. 6A to 6G further illustrate the steps of the method of fabricating the substrate structure of the present embodiment.

First, in step 501, a carrier board 61 is provided as shown in FIG. 6A. The carrier plate 61 is a metal plate made of aluminum, copper, stainless steel or a combination thereof.

Next, in step 503, a first dielectric material layer 11a is formed on one surface of the carrier plate 61 as shown in FIG. 6B. Wherein, in step 503, a dielectric bonding material is laminated on the surface of the carrier plate 61 by using a vacuum pressing process, which has the following advantages: (1) only a single layer of dielectric material layer is required to be vacuum-pressed. Reduce production time; and (2) Suitable for large-area packaging processes to reduce cost and production time.

In step 505, as shown in FIG. 6C, a first wiring layer 13 is formed on the first dielectric material layer 11a. Next, in step 507, a first conductive pillar layer 15 is formed on the first wiring layer 13 as shown in FIG. 6D. In step 509, as shown in FIG. 6E, a second dielectric material layer 11b is formed to cover the first wiring layer 13 and the first conductive pillar layer 15, and expose one end of the first conductive pillar layer 15.

In step 511, as shown in FIG. 6F, a second wiring layer 17 is formed on one end of the exposed first conductive pillar layer 15 and on the second dielectric material layer 11b. Next, in step 513, as shown in FIG. 6G, a second conductive pillar layer is formed on the second wiring layer 17. The second conductive pillar layer has a plurality of conductive pillars 19A, 19B; and the conductive pillar 19A of the second conductive pillar layer is a ┴-type conductive pillar; and the conductive pillar 19B of the second conductive pillar layer is a gate-type conductive pillar. Finally, in step 515, the carrier plate 61 is removed to form the substrate structure 1 as shown in FIG.

A sixth embodiment of the present invention is shown in Fig. 7, which is a flow chart of a method of fabricating a substrate structure. The manufacturing method described in this embodiment can be used to fabricate a substrate structure, such as the substrate structure 2 described in the second embodiment. The steps 701 to 711 of the sixth embodiment shown in FIG. 7 are the same as the steps 501 to 511 of the fifth embodiment of the present invention, and thus are not described herein again. The fabrication of the substrate structure of the present embodiment will be further described below through FIG. 7 and FIGS. 8A to 8B. The next steps of the method. It should be noted that the first dielectric material layer 21a and the second dielectric material layer 21b of the present embodiment are the same as the first dielectric material layer 11a and the second dielectric material layer 11b of the foregoing embodiment.

In step 713, as shown in FIG. 8A, a third dielectric material layer 21c is formed on the second wiring layer 17, and one end of the second wiring layer 17 is exposed. The first dielectric material layer 21a, the second dielectric material layer 21b, and the third dielectric material layer 21c shown in FIG. 8A constitute the dielectric material layer 21 of the substrate structure 2. Next, in step 715, as shown in FIG. 8B, a second conductive pillar layer is formed on one end of the exposed second wiring layer 17. The second conductive pillar layer has a plurality of conductive pillars 23A, 23B, and the conductive pillar 23A of the second conductive pillar layer is a +-type conductive pillar, and the conductive pillar 23B of the second conductive pillar layer is a 导电-type conductive pillar. Finally, in step 717, the carrier plate 61 is removed to form the substrate structure 2 as shown in FIG.

A seventh embodiment of the present invention is shown in Fig. 9, which is a flow chart of a method of fabricating a substrate structure. The manufacturing method described in this embodiment can be used to fabricate a substrate structure, such as the substrate structure 3 described in the third embodiment or the substrate structure 4 described in the fourth embodiment. The steps 901 to 913 of the seventh embodiment shown in FIG. 9 are the same as the steps 501 to 513 of the fifth embodiment of the present invention, and thus are not described herein again. The subsequent steps of the method of fabricating the substrate structure of the present embodiment will be further described below through FIG. 9, FIG. 10A to FIG. 10B, and FIG. It should be noted that the first dielectric material layer 31a and the second dielectric material layer 31b of the present embodiment are the same as the first dielectric material layer 21a and the second dielectric material layer 21b of the foregoing embodiment.

In step 915, as shown in FIG. 10A, a third dielectric material layer 31c is formed to cover the second wiring layer 17 and the second conductive pillar layer, and expose one end of the second conductive pillar layer. The second conductive pillar layer has a plurality of conductive pillars 19A, 19B; and the conductive pillar 19A of the second conductive pillar layer is a ┴-type conductive pillar; and the conductive pillar 19B of the second conductive pillar layer is a gate-type conductive pillar.

In step 917, the third dielectric material layer 31c is etched to form a dielectric material layer 31 as depicted in FIG. 10B. The conductive pillar 19A of the second conductive pillar layer is embedded in the third dielectric material layer 31c, and the conductive pillar 19B of the second conductive pillar layer is The portion is embedded in the third dielectric material layer 31c. It should be noted that, in step 917, the third dielectric material layer 31c' may be etched to form the dielectric material layer 41 as shown in FIG. The conductive pillars 19A, 19B of the second conductive pillar layer are partially embedded in the third dielectric material layer 31c'.

Finally, in step 919, the carrier board 61 is removed to form the substrate structure 3 as shown in FIG. 3 or the substrate structure 4 as shown in FIG.

In addition, in the step of forming the first dielectric material layer 11a, 21a, 31a, the second dielectric material layer 11b, 21b, 31b or the third dielectric material layer 21c, 31c, 31c', the second step is further included as the 12th The figure shows the steps. First, in step 1201, a mold compound is provided. Among them, the mold compound may be a phenolic resin, an epoxy resin, a ruthenium-based resin or other suitable mold compound. In step 1203, the mold compound is heated to a liquid state. Next, in step 1205, a mold compound exhibiting the liquid state is injected, and the mold compound exhibiting the liquid state is coated with the first wire layer 13, the first conductive pillar layer 15, the second wire layer 17, or the second conductive pillar layer. . Finally, in step 1207, the mold compound in a liquid state is cured to form a mold compound layer.

In summary, the substrate structure of the present invention utilizes a relatively simple fabrication process to form different types of conductive pillars, and these conductive pillars are used as a shelf support, thereby replacing the conventional multilayer stacked package architecture. Accordingly, the substrate structure of the present invention and the method of fabricating the same can reduce the thickness of the multi-layer stacked package structure while increasing rigidity and heat dissipation, and have high yield. As a result, the processing time of the substrate structure can be shortened and the manufacturing cost can be greatly reduced.

The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.

Claims (6)

A substrate structure comprising: a first dielectric material layer; a first wire layer partially embedded in the first dielectric material layer; a second wire layer; a first conductive pillar layer embedded And a second conductive pillar layer disposed on the second conductive layer and disposed between the first conductive layer and the second conductive layer; and a second conductive pillar layer disposed on the second conductive layer And having at least one second conductive pillar; wherein the first conductive layer and the second conductive layer are electrically connected by the at least one first conductive pillar, and the at least one second conductive pillar is a conductive pillar One of a 导电-type conductive column and a +-type conductive column. The substrate structure of claim 1, wherein the second wire layer is embedded in a third dielectric material layer, and the at least one second conductive pillar is partially embedded in the third dielectric material layer. . The substrate structure of claim 2, wherein the at least one second conductive pillar is embedded in the third dielectric material layer. The substrate structure of claim 2, wherein the third dielectric material layer is a mold compound layer having one of a phenolic resin, an epoxy resin, and a sulfhydryl resin. The substrate structure according to claim 1, wherein the first dielectric material layer and the second dielectric material layer are respectively a mold compound layer having a phenolic resin, an epoxy resin, and a ruthenium. One of the base resins. The substrate structure of claim 1, wherein the 导电-type conductive pillar, the ┬-type conductive pillar or the +-type conductive pillar is a single structural body.