TWI616860B - Gate driving circuit and operating method thereof - Google Patents
Gate driving circuit and operating method thereof Download PDFInfo
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- TWI616860B TWI616860B TW106121447A TW106121447A TWI616860B TW I616860 B TWI616860 B TW I616860B TW 106121447 A TW106121447 A TW 106121447A TW 106121447 A TW106121447 A TW 106121447A TW I616860 B TWI616860 B TW I616860B
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- 238000011017 operating method Methods 0.000 title claims description 3
- 238000000034 method Methods 0.000 claims description 18
- 238000010586 diagram Methods 0.000 description 7
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- 238000010168 coupling process Methods 0.000 description 4
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- 238000007796 conventional method Methods 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
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- Liquid Crystal Display Device Control (AREA)
Abstract
一種閘極驅動電路,其第一級驅動電路包含第一輸入電晶體、第一輸出電晶體及第一電路組且其第二級驅動電路包含第二輸入電晶體、第二輸出電晶體及第二電路組。第一電路組耦接於第一輸入電晶體與第一輸出電晶體之間。第二電路組耦接於第二輸入電晶體與第二輸出電晶體之間。第一輸入電晶體耦接第一電壓並接收第一閘極控制訊號。第一輸出電晶體耦接第二電壓並輸出第二閘極控制訊號。第二輸入電晶體耦接第一輸出電晶體及第一電壓並接收第二閘極控制訊號。第二輸出電晶體耦接第二電壓。第一閘極控制訊號之電壓值介於第一電壓與第二電壓之間。 A gate driving circuit includes a first-stage driving circuit including a first input transistor, a first output transistor, and a first circuit group, and a second-stage driving circuit including a second input transistor, a second output transistor, and a first Two circuit groups. The first circuit group is coupled between the first input transistor and the first output transistor. The second circuit group is coupled between the second input transistor and the second output transistor. The first input transistor is coupled to the first voltage and receives a first gate control signal. The first output transistor is coupled to the second voltage and outputs a second gate control signal. The second input transistor is coupled to the first output transistor and the first voltage and receives a second gate control signal. The second output transistor is coupled to the second voltage. The voltage value of the first gate control signal is between the first voltage and the second voltage.
Description
本發明係與顯示器有關,尤其是關於一種設置於閘極驅動電路陣列基板(Gate On Array,GOA)上並採用單側驅動方式運作的閘極驅動電路及其運作方法。 The present invention relates to a display, and in particular, to a gate driving circuit provided on a gate driving circuit array substrate (Gate On Array, GOA) and operating by a single-side driving method and an operation method thereof.
一般而言,當設置於閘極驅動電路陣列基板(GOA)上之閘極驅動電路1採用單側驅動方式運作時,如圖1所示,傳統的作法是將某一側輸入的掃描線驅動訊號(例如圖1中之第二驅動訊號SD2)加以攔截住,而由另一側輸入的掃描線驅動訊號(例如圖1中之第一驅動訊號SD1)進行驅動。 Generally speaking, when the gate driving circuit 1 provided on the gate driving circuit array substrate (GOA) operates by a single-sided driving method, as shown in FIG. 1, the conventional method is to drive a scanning line input on one side. The signal (such as the second driving signal SD2 in FIG. 1) is intercepted, and the scanning line driving signal (such as the first driving signal SD1 in FIG. 1) input from the other side is driven.
然而,上述這種傳統的單側驅動方式很容易導致在顯示面板PL所顯示之畫面中出現水平方向的亮暗線,嚴重影響顯示畫面之品質,亟待改善。 However, the above-mentioned conventional single-sided driving method can easily cause bright and dark lines in the horizontal direction to appear on the screen displayed by the display panel PL, which seriously affects the quality of the display screen and needs to be improved urgently.
根據本發明之一具體實施例為一種閘極驅動電路。於此實施例中,閘極驅動電路包含第一級驅動電路及第二級驅動電路。第二級驅動電路耦接第一級驅動電路。第一級驅動電路包含第一輸入電晶體、第一輸出電晶體及第一電路組。第二級驅動 電路包含第二輸入電晶體、第二輸出電晶體及第二電路組。第一輸入電晶體耦接第一電壓並接收第一閘極控制訊號。第一輸出電晶體耦接第二電壓並輸出第二閘極控制訊號。第一電路組耦接於第一輸入電晶體與第一輸出電晶體之間。第二輸入電晶體耦接第一輸出電晶體及第一電壓並接收第二閘極控制訊號。第二輸出電晶體耦接第二電壓。第二電路組耦接於第二輸入電晶體與第二輸出電晶體之間。其中,第一閘極控制訊號具有介於第一電壓與第二電壓之間的第三電壓。 A specific embodiment of the invention is a gate driving circuit. In this embodiment, the gate driving circuit includes a first-stage driving circuit and a second-stage driving circuit. The second-stage driving circuit is coupled to the first-stage driving circuit. The first-stage driving circuit includes a first input transistor, a first output transistor, and a first circuit group. Second-level drive The circuit includes a second input transistor, a second output transistor, and a second circuit group. The first input transistor is coupled to the first voltage and receives a first gate control signal. The first output transistor is coupled to the second voltage and outputs a second gate control signal. The first circuit group is coupled between the first input transistor and the first output transistor. The second input transistor is coupled to the first output transistor and the first voltage and receives a second gate control signal. The second output transistor is coupled to the second voltage. The second circuit group is coupled between the second input transistor and the second output transistor. The first gate control signal has a third voltage between the first voltage and the second voltage.
於一實施例中,第二閘極控制訊號具有介於第一電壓與第二電壓之間的電壓值。 In one embodiment, the second gate control signal has a voltage value between the first voltage and the second voltage.
於一實施例中,第一閘極控制訊號的電壓值與第二閘極控制訊號的電壓值相等。 In one embodiment, the voltage value of the first gate control signal is equal to the voltage value of the second gate control signal.
於一實施例中,第一電壓係大於第二電壓。 In one embodiment, the first voltage is greater than the second voltage.
於一實施例中,第一電路組所包含之複數個電路單元與第二電路組所包含之複數個電路單元之工作點(Quiescent Point)的波形相同。 In one embodiment, the waveforms of the operating points (Quiescent Point) of the plurality of circuit units included in the first circuit group and the plurality of circuit units included in the second circuit group are the same.
於一實施例中,第二輸出電晶體輸出第三閘極控制訊號,且第三閘極控制訊號具有介於第一電壓與第二電壓之間的電壓值。 In one embodiment, the second output transistor outputs a third gate control signal, and the third gate control signal has a voltage value between the first voltage and the second voltage.
於一實施例中,第一閘極控制訊號亦輸入至另一電晶體之閘極,第一閘極控制訊號之接點係分割為兩部分並且其中一部分焊接至第三電壓。 In one embodiment, the first gate control signal is also input to the gate of another transistor. The contact of the first gate control signal is divided into two parts and one part is welded to a third voltage.
根據本發明之另一具體實施例為一種閘極驅動電路之運作方法。於此實施例中,閘極驅動電路包含第一級驅動電路及第二級驅動電路。第一級驅動電路包含第一輸入電晶體、第一電路組及第一輸出電晶體。第二級驅動電路包含第二輸入電晶體、第二電路組及第二輸出電晶體。第一電路組耦接於第一輸入電晶體與第一輸出電晶體之間。第二電路組耦接於第二輸入電晶體與第二輸出電晶體之間。 Another embodiment of the present invention is a method for operating a gate driving circuit. In this embodiment, the gate driving circuit includes a first-stage driving circuit and a second-stage driving circuit. The first-stage driving circuit includes a first input transistor, a first circuit group, and a first output transistor. The second-stage driving circuit includes a second input transistor, a second circuit group, and a second output transistor. The first circuit group is coupled between the first input transistor and the first output transistor. The second circuit group is coupled between the second input transistor and the second output transistor.
閘極驅動電路之運作方法包含下列步驟:將第一輸入電晶體與第二輸入電晶體耦接第一電壓並將第一輸出電晶體與第二輸出電晶體耦接第二電壓;提供第一閘極控制訊號給第一輸入電晶體;以及由第一輸出電晶體輸出第二閘極控制訊號至第二輸入電晶體;其中,第一閘極控制訊號係具有介於第一電壓與第二電壓之間的第三電壓。 The operation method of the gate driving circuit includes the following steps: coupling a first input transistor and a second input transistor to a first voltage and coupling a first output transistor and a second output transistor to a second voltage; providing a first A gate control signal to the first input transistor; and a second output transistor outputting a second gate control signal to the second input transistor; wherein the first gate control signal has a voltage between the first voltage and the second A third voltage between the voltages.
根據本發明之閘極驅動電路及其運作方法係將其第一級驅動電路之第一輸入電晶體(T11)的閘極耦接至介於第一電壓(VssQ)與第二電壓(Vcom)之間的第三電壓(VssG),致使第一級驅動電路中之第一輸入電晶體(T11)及第一輸出電晶體(T12)與第二級驅動電路中之第二輸入電晶體(T11)及第二輸出電晶體(T12)的開關狀態均相同,使得第一級驅動電路中之電路單元的工作點波形與第二級驅動電路中之電路單元的工作點波形亦相同,故可有效改善先前技術中之顯示面板所顯示的畫面出現水平方向亮暗線之現象。 According to the present invention, a gate driving circuit and a method for operating the same are coupled to a gate of a first input transistor (T11) of a first-stage driving circuit between a first voltage (VssQ) and a second voltage (Vcom) The third voltage (VssG) between causes the first input transistor (T11) and the first output transistor (T12) in the first-stage drive circuit and the second input transistor (T11) in the second-stage drive circuit ) And the switching state of the second output transistor (T12) are the same, so that the operating point waveform of the circuit unit in the first-stage driving circuit is the same as the operating point waveform of the circuit unit in the second-stage driving circuit, so it can be effective. Improve the phenomenon that the screen displayed in the prior art displays bright and dark lines in the horizontal direction.
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。 The advantages and spirit of the present invention can be further understood through the following detailed description of the invention and the accompanying drawings.
PL‧‧‧顯示面板 PL‧‧‧ Display Panel
SD1‧‧‧第一驅動訊號 SD1‧‧‧First drive signal
SD2‧‧‧第二驅動訊號 SD2‧‧‧Second drive signal
1、2、3、4‧‧‧閘極驅動電路 1, 2, 3, 4‧‧‧Gate driving circuit
21、31‧‧‧前四級驅動電路 21, 31‧‧‧ the first four levels of driving circuit
22、32‧‧‧後四級驅動電路 22, 32‧‧‧The last four levels of driving circuit
T11‧‧‧輸入電晶體 T11‧‧‧input transistor
QS1、QS2‧‧‧電路組 QS1, QS2‧‧‧Circuit Group
T12‧‧‧輸出電晶體 T12‧‧‧ Output Transistor
ST、ST1~ST8‧‧‧閘極控制訊號 ST 、 ST1 ~ ST8‧‧‧Gate control signal
VssQ‧‧‧第一電壓 VssQ‧‧‧first voltage
Vcom‧‧‧第二電壓(接地電壓) Vcom‧‧‧Second voltage (ground voltage)
VssG‧‧‧第三電壓 VssG‧‧‧Third voltage
Q1~Q8‧‧‧電路單元 Q1 ~ Q8‧‧‧Circuit Unit
6‧‧‧單一級GOA驅動電路 6‧‧‧Single-level GOA drive circuit
7‧‧‧多級GOA驅動電路 7‧‧‧Multi-level GOA drive circuit
70‧‧‧第一級GOA驅動電路 70‧‧‧The first level GOA drive circuit
72‧‧‧第二級GOA驅動電路 72‧‧‧Second level GOA drive circuit
T21、T31~T35、T41~T44、T51~T56、T61~T66‧‧‧電晶體 T21, T31 ~ T35, T41 ~ T44, T51 ~ T56, T61 ~ T66‧‧‧Transistors
C‧‧‧電容 C‧‧‧Capacitor
P(n)、P(n+4)、K(n)、K(n+4)、G(n)、G(n+4)、G(n+8)、Q(n)、Q(n-2)、Q(n+2)、Q(n+4)、Q(n+8)‧‧‧接點 P (n), P (n + 4), K (n), K (n + 4), G (n), G (n + 4), G (n + 8), Q (n), Q ( n-2), Q (n + 2), Q (n + 4), Q (n + 8)
ST(n+4)、ST(n+8)‧‧‧閘極控制訊號 ST (n + 4), ST (n + 8) ‧‧‧Gate control signal
HC1~HC8、VGH‧‧‧電壓 HC1 ~ HC8, VGH‧‧‧Voltage
S10~S14‧‧‧步驟 S10 ~ S14‧‧‧‧step
圖1係繪示先前技術採用單側驅動方式驅動閘極驅動電路時容易導致水平方向亮暗線之示意圖。 FIG. 1 is a schematic diagram showing that the gate driving circuit of the prior art using a single-side driving method easily causes bright and dark lines in the horizontal direction.
圖2A係繪示根據本發明之一較佳具體實施例中之閘極驅動電路的功能方塊圖。 FIG. 2A is a functional block diagram of a gate driving circuit according to a preferred embodiment of the present invention.
圖2B係繪示第二級驅動電路之電路單元Q5~Q8的工作點波形明顯高於第一級驅動電路之電路單元Q1~Q4的工作點波形之示意圖。 FIG. 2B is a schematic diagram showing that the operating point waveforms of circuit units Q5 to Q8 of the second-stage driving circuit are significantly higher than the operating point waveforms of circuit units Q1 to Q4 of the first-stage driving circuit.
圖3係繪示根據本發明之另一較佳具體實施例中之閘極驅動電路的功能方塊圖。 FIG. 3 is a functional block diagram of a gate driving circuit according to another preferred embodiment of the present invention.
圖4係繪示閘極驅動電路之一實施例。 FIG. 4 illustrates an embodiment of the gate driving circuit.
圖5係繪示第一級驅動電路之電路單元Q1~Q4的工作點波形與第二級驅動電路之電路單元Q5~Q8的工作點波形相同之示意圖。 FIG. 5 is a schematic diagram showing that the operating point waveforms of the circuit units Q1 to Q4 of the first-stage driving circuit are the same as the operating point waveforms of the circuit units Q5 to Q8 of the second-stage driving circuit.
圖6係繪示單一級GOA驅動電路之一實施例。 FIG. 6 illustrates an embodiment of a single-level GOA driving circuit.
圖7係繪示多級GOA驅動電路中之第一級GOA驅動電路與第二級GOA驅動電路彼此串接之一實施例。 FIG. 7 illustrates an embodiment in which a first-level GOA driving circuit and a second-level GOA driving circuit in a multi-level GOA driving circuit are connected in series with each other.
圖8係繪示根據本發明之另一較佳具體實施例中之閘極驅動電路之運作方法的流程圖。 FIG. 8 is a flowchart illustrating an operation method of a gate driving circuit according to another preferred embodiment of the present invention.
在下文中將參照附圖更全面地描述本發明,在附圖中示出了本發明的示例性實施例。如本領域技術人員將認識到的,可以以各種不同的方式修改所描述的實施例,而不脫離本發明的精神或範圍。 The invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.
在附圖中,為了清楚起見,放大了部份區域。在整個說明書中,相同的附圖標記表示相同的元件。應當理解,當諸如區域或基板的元件被稱為在另一元件“上”或者“連接(或稱為耦接)”又或者“電性連接”另一元件時,其可以直接在另一元件上或與另一元件連接(或稱為耦接)或電性連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接(或稱為耦接)”可以指物理及/或電連接。 In the drawings, parts of regions have been enlarged for clarity. Throughout the description, the same reference numerals denote the same elements. It should be understood that when an element such as a region or substrate is referred to as being "on" or "connected (or referred to as a coupling)" or "electrically connected" to another element, it can be directly on the other element. It is connected to (or called coupled with) or electrically connected to another element, or an intermediate element may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected (or referred to as" coupled ") may refer to a physical and / or electrical connection.
根據本發明之一較佳具體實施例為一種閘極驅動電路。於此實施例中,閘極驅動電路可設置於閘極驅動電路陣列基板(GOA)上,並可採用單側驅動方式進行驅動,但不以此為限。 A preferred embodiment of the present invention is a gate driving circuit. In this embodiment, the gate driving circuit may be disposed on the gate driving circuit array substrate (GOA) and may be driven by a single-sided driving method, but is not limited thereto.
首先,請參照圖2A,圖2A係繪示此實施例中之閘極驅動電路的功能方塊圖。如圖2A所示,閘極驅動電路2可至少包含前四級驅動電路21及後四級驅動電路22。前四級驅動電路21之每一級包含輸入電晶體T11、電路組QS1及輸出電晶體T12。後四級驅動電路22之每一級包含輸入電晶體T11、電路組QS2及輸出電晶體T12。於前四級驅動電路21中,電路組QS1耦接於輸入電晶體T11與輸出電晶體T12之間。換言之,電路組QS1分別耦接於輸入 電晶體T11之第二端(或稱為汲極)與輸出電晶體T12之控制端(或稱為閘極)。於後四級驅動電路22中,電路組QS2耦接於輸入電晶體T11與輸出電晶體T12之間。換言之,電路組QS2分別耦接於輸入電晶體T11之第二端(或稱為汲極)與輸出電晶體T12之控制端(或稱為閘極)。 First, please refer to FIG. 2A, which is a functional block diagram of a gate driving circuit in this embodiment. As shown in FIG. 2A, the gate driving circuit 2 may include at least a first four-stage driving circuit 21 and a last four-stage driving circuit 22. Each of the first four stages of the driving circuit 21 includes an input transistor T11, a circuit group QS1, and an output transistor T12. Each of the last four stages of the driving circuit 22 includes an input transistor T11, a circuit group QS2, and an output transistor T12. In the first four-stage driving circuit 21, a circuit group QS1 is coupled between the input transistor T11 and the output transistor T12. In other words, the circuit groups QS1 are respectively coupled to the inputs The second terminal (or drain) of the transistor T11 and the control terminal (or gate) of the output transistor T12. In the last four-stage driving circuit 22, a circuit group QS2 is coupled between the input transistor T11 and the output transistor T12. In other words, the circuit group QS2 is respectively coupled to the second terminal (or called the drain) of the input transistor T11 and the control terminal (or called the gate) of the output transistor T12.
前四級驅動電路21之輸入電晶體T11與後四級驅動電路22之輸入電晶體T11分別耦接第一電壓VssQ。換言之,前四級驅動電路21與後四級驅動電路22的輸入電晶體T11之第一端(或稱為源極)均耦接第一電壓VssQ;前四級驅動電路21之輸出電晶體T12與後四級驅動電路22之輸出電晶體T12分別耦接第二電壓(接地電壓)Vcom,其中第一電壓VssQ係大於第二電壓Vcom。換言之,前四級驅動電路21與後四級驅動電路22的輸出電晶體T12之第一端(或稱為源極)均耦接第二電壓(接地電壓)Vcom。於本發明實施例中,係以前四級驅動電路21之輸出電晶體T12之第二端(或稱為汲極)耦接後四級驅動電路22之輸入電晶體T11之控制端(或稱為閘極)為範例,但不限於此。 The input transistor T11 of the front four-stage driving circuit 21 and the input transistor T11 of the rear four-stage driving circuit 22 are respectively coupled to the first voltage VssQ. In other words, the first terminal (or source) of the input transistor T11 of the first four-stage driving circuit 21 and the second-stage driving circuit 22 are both coupled to the first voltage VssQ; the output transistor T12 of the first-stage driving circuit 21 The output transistors T12 of the four-stage driving circuit 22 are respectively coupled to a second voltage (ground voltage) Vcom, where the first voltage VssQ is greater than the second voltage Vcom. In other words, the first terminals (or sources) of the output transistors T12 of the first four-stage driving circuit 21 and the second four-stage driving circuit 22 are both coupled to the second voltage (ground voltage) Vcom. In the embodiment of the present invention, the second terminal (or drain) of the output transistor T12 of the previous four-stage driving circuit 21 is coupled to the control terminal (or the so-called Gate) is an example, but it is not limited to this.
為了改善先前技術所遭遇到的亮暗線現象,此實施例係將閘極驅動電路2的前四級驅動電路21的輸入電晶體T11的閘極直接耦接至接地電壓Vcom,使得前四級驅動電路21所接收到的閘極控制訊號ST具有接地電壓Vcom,其中,閘極控制訊號ST又稱為起始閘極控制訊號。藉此,可使前四級驅動電路21的輸入電晶體T11維持恆開之狀態,並且前四級驅動電路21中之電路組QS1的 電路單元Q1~Q4均可(或稱為皆可)充電至第一電壓VssQ,算是相當穩定。 In order to improve the bright and dark line phenomenon encountered in the prior art, in this embodiment, the gate of the input transistor T11 of the first four-stage driving circuit 21 of the gate driving circuit 2 is directly coupled to the ground voltage Vcom, so that the first four-stage driving The gate control signal ST received by the circuit 21 has a ground voltage Vcom, and the gate control signal ST is also referred to as an initial gate control signal. Thereby, the input transistor T11 of the first four-stage driving circuit 21 can be maintained in a constant-on state, and the voltage of the circuit group QS1 in the first four-stage driving circuit 21 can be maintained. The circuit units Q1 to Q4 can all be charged (or called both) to be charged to the first voltage VssQ, which is considered to be quite stable.
然而,於此實施例中,由於前四級驅動電路21中之電路組QS1的電路單元Q1~Q4的工作點(Quiescent Point)電壓相對較低,使得從前四級驅動電路21的輸出電晶體T12輸出至後四級驅動電路22的輸入電晶體T11的閘極控制訊號ST1~ST4會處於浮動(Floating)狀態,因而導致後四級驅動電路22的輸入電晶體T11的穩定性不佳。如圖2B所示,這將會造成後四級驅動電路22中之電路組QS2的電路單元Q5~Q8之工作點波形明顯高於前四級驅動電路21中之電路組QS1的電路單元Q1~Q4之工作點波形,使得亮暗線的現象無法完全獲得改善。於此實施例中,前四級驅動電路21分別具有各自對應的輸入電晶體T11和輸出電晶體T12,前四級驅動電路21的輸入電晶體T11的閘極端分別接收同一個起始閘極控制訊號ST,前四級驅動電路21的輸出電晶體T12的第二端分別輸出閘極控制訊號ST1~ST4。後四級驅動電路22分別具有各自對應的輸入電晶體T11和輸出電晶體T12,後四級驅動電路22的輸入電晶體T11的閘極端分別接收各自對應的閘極控制訊號ST1~ST4,後四級驅動電路22的輸出電晶體T12的第二端分別輸出閘極控制訊號ST5~ST8。 However, in this embodiment, because the working point (Quiescent Point) voltage of the circuit units Q1 to Q4 of the circuit group QS1 in the first four-stage driving circuit 21 is relatively low, the output transistor T12 from the first four-stage driving circuit 21 is relatively low. The gate control signals ST1 to ST4 output to the input transistor T11 of the fourth-stage driving circuit 22 are in a floating state, which results in poor stability of the input transistor T11 of the fourth-stage driving circuit 22. As shown in FIG. 2B, this will cause the operating point waveforms of the circuit units Q5 ~ Q8 of the circuit group QS2 in the last four-stage drive circuit 22 to be significantly higher than the circuit units Q1 ~ of the circuit group QS1 in the previous four-stage drive circuit 21. The working point waveform of Q4 makes the phenomenon of bright and dark lines not completely improved. In this embodiment, the first four-stage driving circuit 21 has its own corresponding input transistor T11 and output transistor T12, and the gate terminals of the input transistor T11 of the first four-stage driving circuit 21 respectively receive the same starting gate control. As for the signal ST, the second terminals of the output transistor T12 of the first four-stage driving circuit 21 respectively output gate control signals ST1 to ST4. The last four-stage driving circuit 22 has its own corresponding input transistor T11 and output transistor T12. The gate terminals of the input transistor T11 of the last four-stage driving circuit 22 respectively receive the corresponding gate control signals ST1 to ST4. The second terminals of the output transistor T12 of the stage driving circuit 22 respectively output gate control signals ST5 to ST8.
為了進一步克服上述實施例之缺點,請參照圖3,圖3係繪示本發明之另一較佳具體實施例中之閘極驅動電路的功能方塊圖。 In order to further overcome the disadvantages of the above embodiments, please refer to FIG. 3, which is a functional block diagram of a gate driving circuit in another preferred embodiment of the present invention.
如圖3所示,閘極驅動電路3可至少包含前四級驅動 電路31及後四級驅動電路32。前四級驅動電路31之每一級包含輸入電晶體T11、電路組QS1及輸出電晶體T12。後四級驅動電路32包含輸入電晶體T11、電路組QS2及輸出電晶體T12。於前四級驅動電路31中,電路組QS1耦接於輸入電晶體T11與輸出電晶體T12之間。於後四級驅動電路32中,電路組QS2耦接於輸入電晶體T11與輸出電晶體T12之間。 As shown in FIG. 3, the gate driving circuit 3 may include at least the first four stages of driving The circuit 31 and the subsequent four-stage driving circuit 32. Each of the first four stages of the driving circuit 31 includes an input transistor T11, a circuit group QS1, and an output transistor T12. The last four-stage driving circuit 32 includes an input transistor T11, a circuit group QS2, and an output transistor T12. In the first four-stage driving circuit 31, a circuit group QS1 is coupled between the input transistor T11 and the output transistor T12. In the last four-stage driving circuit 32, a circuit group QS2 is coupled between the input transistor T11 and the output transistor T12.
前四級驅動電路31與後四級驅動電路32之輸入電晶體T11的第一端均耦接第一電壓VssQ;前四級驅動電路31與後四級驅動電路32之輸出電晶體T12均耦接第二電壓(接地電壓)Vcom,其中第一電壓VssQ係大於第二電壓Vcom。 The first terminals of the input transistors T11 of the first four-stage driving circuit 31 and the second-stage driving circuit 32 are coupled to the first voltage VssQ; the first-four-stage driving circuit 31 and the output transistors T12 of the second-stage driving circuit 32 are coupled. Connected to a second voltage (ground voltage) Vcom, where the first voltage VssQ is greater than the second voltage Vcom.
前四級驅動電路31之輸入電晶體T11接收閘極控制訊號ST並且前四級驅動電路31之輸出電晶體T12輸出閘極控制訊號ST1~ST4至後四級驅動電路32之輸入電晶體T11。同理,後四級驅動電路32之輸入電晶體T11分別接收閘極控制訊號ST1~ST4並且後四級驅動電路32之輸出電晶體T12輸出閘極控制訊號ST5~ST8。 The input transistor T11 of the first four-stage driving circuit 31 receives the gate control signal ST and the output transistor T12 of the first four-stage driving circuit 31 outputs the gate control signals ST1 to ST4 to the input transistor T11 of the fourth-stage driving circuit 32. Similarly, the input transistor T11 of the last four-stage driving circuit 32 receives the gate control signals ST1 to ST4, and the output transistor T12 of the latter four-stage driving circuit 32 outputs the gate control signals ST5 to ST8.
於實際應用中,若閘極驅動電路3還包含另四級驅動電路(圖未示),則另四級驅動電路之輸入電晶體即會接收後四級驅動電路32之輸出電晶體T12所輸出的閘極控制訊號ST5~ST8,並且另四級驅動電路之輸出電晶體會輸出另一組閘極控制訊號至下四級驅動電路,以此類推。需說明的是,閘極驅動電路3可包含複數級驅動電路,並且該複數級驅動電路之數目可依實際需求而 定,並不以此實施例為限。其餘均可依此類推,於此不另行贅述。 In actual application, if the gate driving circuit 3 also includes another four-level driving circuit (not shown), the input transistor of the other four-level driving circuit will receive the output of the output transistor T12 of the next four-level driving circuit 32. The gate control signals ST5 ~ ST8, and the output transistor of the other four-level drive circuit will output another set of gate control signals to the next four-level drive circuit, and so on. It should be noted that the gate driving circuit 3 may include a plurality of stages of driving circuits, and the number of the plurality of stages of driving circuits may depend on actual requirements. It is not limited to this embodiment. The rest can be deduced by analogy and will not be repeated here.
接著,請參照圖4,於一實施例中,假設閘極驅動電路4的前四級驅動電路包含四個輸入電晶體T11、四個電路單元Q1~Q4及四個輸出電晶體T12,而閘極驅動電路4的後四級驅動電路包含四個輸入電晶體T11、四個電路單元Q5~Q8及四個輸出電晶體T12。 Next, referring to FIG. 4, in an embodiment, it is assumed that the first four-stage driving circuit of the gate driving circuit 4 includes four input transistors T11, four circuit units Q1 to Q4, and four output transistors T12. The last four-stage driving circuit of the pole driving circuit 4 includes four input transistors T11, four circuit units Q5 to Q8, and four output transistors T12.
前四級驅動電路中之四個輸入電晶體T11之第一端(或稱為源極)均耦接電壓VGH、四個輸入電晶體T11之第二端(或稱為汲極)分別耦接四個輸出電晶體T12之控制端(或稱為閘極)且四個輸入電晶體T11之控制端(或稱為閘極)均受控於閘極控制訊號ST;電路單元Q1~Q4分別耦接於四個輸入電晶體T11之第二端(或稱為汲極)與四個輸出電晶體T12之控制端(或稱為閘極)之間;四個輸出電晶體T12之第一端(或稱為源極)分別耦接電壓HC1~HC4且其第二端(或稱為汲極)分別耦接後四級驅動電路的四個輸入電晶體T11之控制端(或稱為閘極)。 The first terminals (or sources) of the four input transistors T11 in the first four stages of driving circuits are all coupled to the voltage VGH, and the second terminals (or sinks) of the four input transistors T11 are respectively coupled. The control terminals (or gates) of the four output transistors T12 and the control terminals (or gates) of the four input transistors T11 are controlled by the gate control signal ST; the circuit units Q1 ~ Q4 are respectively coupled Connected between the second terminal (or drain) of the four input transistors T11 and the control terminal (or gate) of the four output transistors T12; the first terminal of the four output transistors T12 ( (Or source) are respectively coupled to the voltages HC1 ~ HC4 and their second ends (or drains) are respectively coupled to the control terminals (or gates) of the four input transistors T11 of the four-stage drive circuit .
需說明的是,於實際應用中,電壓VGH可等於前述的第一電壓VssQ且電壓HC1~HC4可等於前述的第二電壓(接地電壓)Vcom,但不以此為限。此外,閘極控制訊號ST可具有介於第一電壓VssQ與第二電壓(接地電壓)Vcom之間的電壓值,例如第三電壓VssG,但不以此為限。 It should be noted that, in practical applications, the voltage VGH may be equal to the aforementioned first voltage VssQ and the voltages HC1 to HC4 may be equal to the aforementioned second voltage (ground voltage) Vcom, but it is not limited thereto. In addition, the gate control signal ST may have a voltage value between the first voltage VssQ and the second voltage (ground voltage) Vcom, such as the third voltage VssG, but is not limited thereto.
後四級驅動電路的四個輸入電晶體T11之第一端(或稱為源極)均耦接電壓VGH、四個輸入電晶體T11之第二端(或稱為 汲極)分別耦接四個輸出電晶體T12之控制端(或稱為閘極)且四個輸入電晶體T11之控制端(或稱為閘極)分別受控於前四級驅動電路的四個輸出電晶體T12所分別輸出的閘極控制訊號ST1~ST4;四個電路單元Q5~Q8分別耦接於四個輸入電晶體T11之第二端(或稱為汲極)與四個輸出電晶體T12之控制端(或稱為閘極)之間;四個輸出電晶體T12之第一端(或稱為源極)分別耦接電壓HC5~HC8且其第二端(或稱為汲極)分別輸出閘極控制訊號ST5~ST8。 The first terminal (or source) of the four input transistors T11 of the last four stages of the driving circuit are all coupled to the voltage VGH, and the second terminal (or so-called (Drain) are respectively coupled to the control terminals (or gates) of the four output transistors T12 and the control terminals (or gates) of the four input transistors T11 are controlled by the four The gate control signals ST1 ~ ST4 output by each output transistor T12; the four circuit units Q5 ~ Q8 are respectively coupled to the second end (or drain) of the four input transistors T11 and the four output circuits. The control terminal (or gate) of the crystal T12; the first terminal (or source) of the four output transistors T12 are respectively coupled to the voltages HC5 ~ HC8 and the second terminal (or the drain) ) Output gate control signals ST5 ~ ST8 respectively.
於實際應用中,電壓HC5~HC8可等於前述的第二電壓(接地電壓)Vcom,但不以此為限。此外,前四級驅動電路的四個輸出電晶體T12所分別輸出的閘極控制訊號ST1~ST4與後四級驅動電路的四個輸出電晶體T12所分別輸出的閘極控制訊號ST5~ST8均可具有介於第一電壓VssQ與第二電壓(接地電壓)Vcom之間的電壓值,例如第三電壓VssG,但不以此為限。 In practical applications, the voltages HC5 to HC8 may be equal to the aforementioned second voltage (ground voltage) Vcom, but it is not limited thereto. In addition, the gate control signals ST1 ~ ST4 output by the four output transistors T12 of the first four-stage driving circuit and the gate control signals ST5 ~ ST8 output by the four output transistors T12 of the fourth-stage driving circuit are both It may have a voltage value between the first voltage VssQ and the second voltage (ground voltage) Vcom, such as the third voltage VssG, but is not limited thereto.
需說明的是,由於此實施例中輸入至前四級驅動電路的四個輸入電晶體T11之閘極控制訊號ST具有的電壓值(例如第三電壓VssG)大於上述實施例中輸入至前四級驅動電路的輸入電晶體T11之閘極控制訊號ST具有的第二電壓(接地電壓)Vcom,使得此實施例中之前四級驅動電路的四個輸入電晶體T11均處於微開的狀態,而不是如同上述實施例中之前四級驅動電路的輸入電晶體T11處於恆開的狀態,這也連帶使得此實施例中之耦接四個輸入電晶體T11的四個輸出電晶體T12亦均處於微開的狀態,所以此實施例中之前四級驅動電路的四個輸出電晶體T12輸出至後四級驅 動電路的閘極控制訊號ST1~ST4亦具有介於第一電壓VssQ與第二電壓Vcom之間的電壓值(例如第三電壓VssG),進而使得後四級驅動電路中之四個輸入電晶體T11與四個輸出電晶體T12亦均處於微開的狀態。 It should be noted that since the gate control signal ST of the four input transistors T11 input to the first four-stage driving circuits in this embodiment has a voltage value (for example, the third voltage VssG) that is greater than the input to the first four in the above embodiment The second voltage (ground voltage) Vcom of the gate control signal ST of the input transistor T11 of the stage driving circuit makes the four input transistors T11 of the previous four-stage driving circuit in the embodiment all slightly open, and It is not like the input transistor T11 of the previous four-stage driving circuit in the above embodiment is in a constant-on state, which also causes the four output transistors T12 coupled to the four input transistor T11 in this embodiment to also be in the micro state. ON state, so in this embodiment, the four output transistors T12 of the previous four-stage drive circuit output to the last four-stage drive. The gate control signals ST1 ~ ST4 of the dynamic circuit also have a voltage value between the first voltage VssQ and the second voltage Vcom (for example, the third voltage VssG), thereby making the four input transistors in the last four stages of the driving circuit. T11 and four output transistors T12 are also in a slightly open state.
承上,由於前四級驅動電路中之四個輸入電晶體T11及四個輸出電晶體T12與後四級驅動電路中之四個輸入電晶體T11及四個輸出電晶體T12的開關狀態相同,均處於微開之狀態,使得前四級驅動電路中之四個電路單元Q1~Q4的工作點波形與後四級驅動電路中之四個電路單元Q5~Q8的工作點波形亦會相同,如圖5所示。 As a consequence, since the four input transistors T11 and four output transistors T12 in the first four-stage drive circuits are the same as the four input transistors T11 and four output transistors T12 in the four-stage drive circuits, Both are in a slightly open state, so that the operating point waveforms of the four circuit units Q1 ~ Q4 in the first four-stage driving circuit and the operating point waveforms of the four circuit units Q5 ~ Q8 in the latter four-stage driving circuit will also be the same, such as Figure 5 shows.
相較於圖2B所示之後四級驅動電路的四個電路單元Q5~Q8之工作點波形明顯高於前四級驅動電路的四個電路單元Q1~Q4之工作點波形,圖5所示之前四級驅動電路的四個電路單元Q1~Q4的工作點波形與後四級驅動電路的四個電路單元Q5~Q8的工作點波形相同,代表此實施例中之前四級驅動電路與後面各級驅動電路之運作上變得較為一致且穩定,而不會有上述實施例中之電晶體過開或過關的現象,故能有效改善顯示面板的顯示畫面出現水平方向亮暗線之現象。 Compared with the operating point waveforms of the four circuit units Q5 ~ Q8 of the subsequent four-stage driving circuit shown in FIG. 2B, the operating point waveforms of the four circuit units Q1 ~ Q4 of the previous four-stage driving circuit are significantly higher than before. The operating point waveforms of the four circuit units Q1 ~ Q4 of the four-stage driving circuit are the same as the operating point waveforms of the four circuit units Q5 ~ Q8 of the latter four-stage driving circuit, which represent the previous four-stage driving circuit and the subsequent stages in this embodiment. The operation of the driving circuit becomes more consistent and stable, and there is no phenomenon that the transistor in the above embodiment is turned on or off, so the phenomenon of bright and dark lines in the horizontal direction of the display screen of the display panel can be effectively improved.
接著,請參照圖6,圖6係繪示單一級GOA驅動電路之一實施例。如圖6所示,於單一級GOA驅動電路6中,電晶體T44之第一端(或稱為源極)耦接輸入電晶體T11之第二端(或稱為汲極)、電晶體T44之第二端(或稱為汲極)耦接第一電壓VssQ且電晶 體T44之控制端(或稱為閘極)受控於第二電壓(接地電壓)Vcom;電晶體T55及T56之第二端(或稱為汲極)均耦接第一電壓VssQ且其控制端(或稱為閘極)均耦接至接點Q(n-2);電晶體T52及T54之第二端(或稱為汲極)均耦接第一電壓VssQ且其控制端(或稱為閘極)均耦接至接點Q(n);電晶體T51及T53之第一端(或稱為源極)彼此耦接至電晶體T51之控制端(或稱為閘極),且電晶體T51之第二端(或稱為汲極)分別耦接電晶體T56及T52之第一端(或稱為源極)與電晶體T53之控制端(或稱為閘極),而電晶體T53之第二端(或稱為汲極)則分別耦接電晶體T54及T55之第一端(或稱為源極)與電晶體T32、T34及T42之控制端(或稱為閘極)於接點P(n);電晶體T34及T42之第二端(或稱為汲極)均耦接第一電壓VssQ,而電晶體T32之第二端(或稱為汲極)耦接第三電壓VssG;電晶體T42之第一端(或稱為源極)耦接至輸入電晶體T11之第二端(或稱為汲極)與電晶體T44之第一端(或稱為源極)之間;電容C之一端耦接至輸入電晶體T11之第二端(或稱為汲極)與電晶體T44之第一端(或稱為源極)之間且另一端耦接電晶體T32之第一端(或稱為源極)。 Next, please refer to FIG. 6, which illustrates an embodiment of a single-level GOA driving circuit. As shown in FIG. 6, in the single-level GOA driving circuit 6, the first terminal (or source) of the transistor T44 is coupled to the second terminal (or drain) of the input transistor T11 and the transistor T44. The second terminal (or drain) is coupled to the first voltage VssQ and the transistor The control terminal (or gate) of the body T44 is controlled by the second voltage (ground voltage) Vcom; the second terminal (or the drain) of the transistors T55 and T56 are both coupled to the first voltage VssQ and its control The terminals (or gates) are all coupled to the contact Q (n-2); the second terminals (or drains) of the transistors T52 and T54 are all coupled to the first voltage VssQ and their control terminals (or (Referred to as the gate) are all coupled to the contact Q (n); the first ends (or sources) of the transistors T51 and T53 are coupled to the control end (or the gate) of the transistor T51, And the second terminal (or drain) of transistor T51 is respectively coupled to the first terminal (or source) of transistor T56 and T52 and the control terminal (or gate) of transistor T53, and The second terminal (or drain) of transistor T53 is coupled to the first terminal (or source) of transistors T54 and T55 and the control terminal (or gate) of transistors T32, T34, and T42, respectively. Pole) at the contact point P (n); the second ends (or drains) of the transistors T34 and T42 are both coupled to the first voltage VssQ, and the second ends (or drains) of the transistor T32 are coupled Connected to the third voltage VssG; the first terminal (or source) of transistor T42 is coupled to the second terminal (or source) of input transistor T11 Is the drain) and the first end (or source) of transistor T44; one end of capacitor C is coupled to the second end (or drain) of input transistor T11 and the first end of transistor T44 Between one end (or source) and the other end is coupled to the first end (or source) of the transistor T32.
電晶體T65及T66之第二端(或稱為汲極)均耦接第一電壓VssQ且其控制端(或稱為閘極)均耦接至接點Q(n-2);電晶體T62及T64之第二端(或稱為汲極)均耦接第一電壓VssQ且其控制端(或稱為閘極)均耦接至接點Q(n);電晶體T61及T63之第一端(或稱為源極)彼此耦接至電晶體T61之控制端(或稱為閘極),且電晶體T61之第二端(或稱為汲極)分別耦接電晶體T66及T62之第一端(或 稱為源極)與電晶體T63之控制端(或稱為閘極),而電晶體T63之第二端(或稱為汲極)則分別耦接電晶體T64及T65之第一端(或稱為源極)與電晶體T33、T35及T43之控制端(或稱為閘極)於接點K(n);電晶體T35及T43之第二端(或稱為汲極)均耦接第一電壓VssQ,而電晶體T33之第二端(或稱為汲極)耦接第三電壓VssG;電晶體T43之第一端(或稱為源極)耦接至輸入電晶體T11之第二端(或稱為汲極)與輸出電晶體T12之控制端(或稱為閘極)之間的接點Q(n);電晶體T33之第一端(或稱為源極)耦接至電容C與電晶體T32之間以及接點G(n)。 The second terminals (or drains) of the transistors T65 and T66 are both coupled to the first voltage VssQ and their control terminals (or gates) are all coupled to the contact Q (n-2); the transistor T62 And the second terminal (or drain) of T64 is coupled to the first voltage VssQ and its control terminal (or gate) is coupled to contact Q (n); the first of transistors T61 and T63 The terminals (or sources) are coupled to the control terminals (or gates) of transistor T61, and the second terminals (or drains) of transistor T61 are coupled to the transistors T66 and T62, respectively. First end (or (Referred to as the source) and the control terminal (or gate) of the transistor T63, and the second terminal (or the drain) of the transistor T63 is coupled to the first terminal (or the transistor T64 and T65) (or (Referred to as the source) is connected to the control terminal (or gate) of the transistors T33, T35 and T43 at the contact K (n); the second terminal (or referred to as the drain) of the transistors T35 and T43 is coupled The first voltage VssQ, and the second terminal (or drain) of the transistor T33 is coupled to the third voltage VssG; the first terminal (or source) of the transistor T43 is coupled to the first terminal of the input transistor T11. The contact Q (n) between the two terminal (or drain) and the control terminal (or gate) of the output transistor T12; the first terminal (or source) of the transistor T33 is coupled Between capacitor C and transistor T32 and contact G (n).
輸入電晶體T11之第一端(或稱為源極)耦接電壓VGH、輸入電晶體T11之第二端(或稱為汲極)耦接輸出電晶體T12之控制端(或稱為閘極)且輸入電晶體T11之控制端(或稱為閘極)受控於閘極控制訊號ST;輸出電晶體T12之第一端(或稱為源極)耦接電壓HC1且其第二端(或稱為汲極)分別耦接電晶體T34及T35之第一端(或稱為源極)以及另一級GOA電路之輸入電晶體T11之控制端(或稱為閘極);電晶體T41之控制端(或稱為閘極)係受控於閘極控制訊號ST(n+4)且其第一端(或稱為源極)耦接至電晶體T12與T21之間,至於其第二端(或稱為汲極)耦接第一電壓VssQ;電晶體T21之第一端(或稱為源極)耦接電壓HC1且其第二端(或稱為汲極)耦接電晶體T31之第一端(或稱為源極)於接點G(n);電晶體T31之第二端(或稱為汲極)耦接第三電壓VssG且其控制端(或稱為閘極)耦接至接點G(n+4)。 The first terminal (or source) of the input transistor T11 is coupled to the voltage VGH, and the second terminal (or drain) of the input transistor T11 is coupled to the control terminal (or gate) of the output transistor T12. ) And the control terminal (or gate) of the input transistor T11 is controlled by the gate control signal ST; the first terminal (or source) of the output transistor T12 is coupled to the voltage HC1 and its second terminal ( (Also called the drain) are respectively connected to the first terminal (or source) of the transistors T34 and T35 and the control terminal (or gate) of the input transistor T11 of the other GOA circuit; the transistor T41 The control terminal (or gate) is controlled by the gate control signal ST (n + 4) and its first terminal (or source) is coupled between the transistors T12 and T21, and its second Terminal (or drain) is coupled to the first voltage VssQ; the first terminal (or source) of transistor T21 is coupled to voltage HC1 and the second terminal (or drain) is coupled to transistor T31 The first terminal (or source) of the transistor T31 is connected to the contact G (n); the second terminal (or drain) of the transistor T31 is coupled to the third voltage VssG and its control terminal (or gate) Coupled to contact G (n + 4).
需說明的是,單一級GOA驅動電路6中之輸出電晶體T12可透過其第二端(或稱為汲極)輸出閘極驅動訊號至另一級GOA電路之輸入電晶體T11之控制端(或稱為閘極)。於實際應用中,閘極控制訊號ST之接點亦可分割為兩部分,其中一部分可焊接至第三電壓VssG之接點,另一部分則可耦接至輸入電晶體T11之控制端(或稱為閘極),但不以此為限。 It should be noted that the output transistor T12 in the single-stage GOA drive circuit 6 can output the gate drive signal to the control terminal (or the input transistor T11 of the GOA circuit of the other stage) through its second end (or called the drain). (Called the gate). In practical applications, the contact of the gate control signal ST can also be divided into two parts, one of which can be soldered to the contact of the third voltage VssG, and the other can be coupled to the control terminal (or Gate), but not limited to this.
接著,請參照圖7,圖7係繪示多級GOA驅動電路中之第一級GOA驅動電路與第二級GOA驅動電路彼此串接之一實施例。 Next, please refer to FIG. 7, which illustrates an embodiment in which a first-level GOA driving circuit and a second-level GOA driving circuit in a multi-level GOA driving circuit are connected in series with each other.
如圖7所示,於多級GOA驅動電路7中,第一級GOA驅動電路70與第二級GOA驅動電路72係彼此串接。第一級GOA驅動電路70係透過其輸出電晶體T12之第二端(或稱為汲極)耦接並輸出閘極控制訊號ST1至第二級GOA驅動電路72之輸入電晶體T11之控制端(或稱為閘極)。 As shown in FIG. 7, in the multi-level GOA driving circuit 7, the first-level GOA driving circuit 70 and the second-level GOA driving circuit 72 are connected in series with each other. The first-stage GOA driving circuit 70 is coupled to output the gate control signal ST1 through the second terminal (or called the drain) of the output transistor T12 to the control terminal of the input transistor T11 of the second-stage GOA driving circuit 72. (Or gate).
第二級GOA驅動電路72之輸入電晶體T11之第一端(或稱為源極)耦接電壓VGH、輸入電晶體T11之第二端(或稱為汲極)耦接輸出電晶體T12之控制端(或稱為閘極)且輸入電晶體T11之控制端(或稱為閘極)受控於閘極控制訊號ST1;第二級GOA驅動電路72之輸出電晶體T12之第一端(或稱為源極)耦接電壓HC1且其第二端(或稱為汲極)分別耦接電晶體T34及T35之第一端(或稱為源極)以及第三級GOA電路之輸入電晶體T11之控制端(或稱為閘極)。第二級GOA驅動電路72係透過其輸出電晶體T12之第二端(或 稱為汲極)輸出閘極控制訊號ST2至第三級GOA電路之輸入電晶體T11之控制端(或稱為閘極)。 The first terminal (or source) of the input transistor T11 of the second-stage GOA driving circuit 72 is coupled to the voltage VGH, and the second terminal (or drain) of the input transistor T11 is coupled to the output transistor T12. The control terminal (or gate) and the control terminal (or gate) of the input transistor T11 are controlled by the gate control signal ST1; the first terminal of the output transistor T12 of the second-level GOA driving circuit 72 ( Or the source) is coupled to the voltage HC1 and its second end (or the drain) is respectively connected to the first end (or the source) of the transistors T34 and T35 and the input voltage of the third-level GOA circuit The control terminal (or gate) of the crystal T11. The second-stage GOA driving circuit 72 is through the second terminal of its output transistor T12 (or (Referred to as the drain) outputs the gate control signal ST2 to the control terminal (or gate) of the input transistor T11 of the third-level GOA circuit.
需說明的是,假設多級GOA驅動電路7僅包含第一級GOA驅動電路70與第二級GOA驅動電路72,則第二級GOA驅動電路72之輸出電晶體T12之第二端(或稱為汲極)會耦接並輸出閘極控制訊號至顯示面板上相對應的掃描線,以對相對應的掃描線進行驅動,但不以此為限。至於第一級GOA驅動電路70與第二級GOA驅動電路72之詳細電路結構與元件耦接關係可參照前述關於圖6之說明內容,於此不另行贅述。 It should be noted that if the multi-level GOA driving circuit 7 includes only the first-level GOA driving circuit 70 and the second-level GOA driving circuit 72, the second terminal (or (Drain) is coupled to and output the gate control signal to the corresponding scan line on the display panel to drive the corresponding scan line, but not limited to this. As for the detailed circuit structure and the component coupling relationship of the first-level GOA driving circuit 70 and the second-level GOA driving circuit 72, reference may be made to the description of FIG. 6 above, which will not be repeated here.
根據本發明之另一具體實施例為一種閘極驅動電路之運作方法。於此實施例中,閘極驅動電路之運作方法係以單側驅動方式進行閘極驅動電路之驅動,並且閘極驅動電路係設置於閘極驅動電路陣列基板(GOA)上。 Another embodiment of the present invention is a method for operating a gate driving circuit. In this embodiment, the operation method of the gate driving circuit is to drive the gate driving circuit in a single-sided driving manner, and the gate driving circuit is disposed on the gate driving circuit array substrate (GOA).
請參照圖8,圖8係繪示此實施例之閘極驅動電路之運作方法的流程圖。如圖8所示,閘極驅動電路之運作方法可至少包含下列步驟:步驟S10:分別將前四級驅動電路31之輸入電晶體T11與後四級驅動電路32之輸入電晶體T21耦接第一電壓VssQ,並分別將前四級驅動電路31之輸出電晶體T12與後四級驅動電路32之輸出電晶體T22耦接第二電壓(接地電壓)Vcom,其中第一電壓VssQ大於第二電壓Vcom;步驟S12:提供閘極控制訊號ST給前四級驅動電路31 之輸入電晶體T11的閘極,並且閘極控制訊號ST具有介於第一電壓VssQ與第二電壓(接地電壓)Vcom之間的電壓值,例如第三電壓VssG;以及步驟S14:由前四級驅動電路31之輸出電晶體T12輸出閘極控制訊號ST1至後四級驅動電路32之輸入電晶體T11,其中閘極控制訊號ST1亦具有介於第一電壓VssQ與第二電壓(接地電壓)Vcom之間的電壓值,例如第三電壓VssG,亦即前四級驅動電路31所接收到之閘極控制訊號ST的電壓值與後四級驅動電路32所接收到之閘極控制訊號ST1的電壓值相等。 Please refer to FIG. 8. FIG. 8 is a flowchart illustrating an operation method of the gate driving circuit of this embodiment. As shown in FIG. 8, the operation method of the gate driving circuit may include at least the following steps: Step S10: The input transistor T11 of the first four-stage driving circuit 31 and the input transistor T21 of the last four-stage driving circuit 32 are coupled to the first A voltage VssQ, and the output transistor T12 of the first four-stage drive circuit 31 and the output transistor T22 of the last four-stage drive circuit 32 are respectively coupled to a second voltage (ground voltage) Vcom, where the first voltage VssQ is greater than the second voltage Vcom; Step S12: Provide the gate control signal ST to the first four-stage driving circuit 31 The gate of the input transistor T11, and the gate control signal ST has a voltage value between the first voltage VssQ and the second voltage (ground voltage) Vcom, such as the third voltage VssG; and step S14: the first four The output transistor T12 of the stage driving circuit 31 outputs the gate control signal ST1 to the input transistor T11 of the last four stage driving circuit 32. The gate control signal ST1 also has a voltage between the first voltage VssQ and the second voltage (ground voltage). The voltage value between Vcom, for example, the third voltage VssG, that is, the voltage value of the gate control signal ST received by the first four-stage drive circuit 31 and the gate control signal ST1 received by the fourth-stage drive circuit 32 The voltage values are equal.
同理,後四級驅動電路32中之輸出電晶體T12會輸出閘極控制訊號ST2至顯示面板上相對應的掃描線,以對相對應的掃描線進行驅動,並且閘極控制訊號ST2亦具有介於第一電壓VssQ與第二電壓(接地電壓)Vcom之間的電壓值,例如第三電壓VssG,但不以此為限。 Similarly, the output transistor T12 in the last four-stage driving circuit 32 outputs the gate control signal ST2 to the corresponding scan line on the display panel to drive the corresponding scan line, and the gate control signal ST2 also has A voltage value between the first voltage VssQ and the second voltage (ground voltage) Vcom, such as the third voltage VssG, but is not limited thereto.
於實際應用中,假設前四級驅動電路31中之電路組QS1包含複數個電路單元Q1~Q4且後四級驅動電路32中之電路組QS2包含複數個電路單元Q5~Q8,則如圖5所示,電路組QS1的複數個電路單元Q1~Q4之工作點的波形與電路組QS2的複數個電路單元Q5~Q8之工作點的波形相同。 In actual application, it is assumed that the circuit group QS1 in the first four-stage driving circuit 31 includes a plurality of circuit units Q1 to Q4 and the circuit group QS2 in the last four-stage driving circuit 32 includes a plurality of circuit units Q5 to Q8, as shown in FIG. 5 As shown, the waveforms of the operating points of the plurality of circuit units Q1 to Q4 of the circuit group QS1 are the same as the waveforms of the operating points of the plurality of circuit units Q5 to Q8 of the circuit group QS2.
需說明的是,於此實施例中之閘極驅動電路運作方法,可運用於前述實施例中,例如,圖3、圖4、圖6或圖7中,而前述實施例各圖之元件描述與其相關連接關係,可查看前述實施 例各圖,於此不再贅言。再者,本發明之閘極驅動電路運作方法係以運用於圖3之閘極驅動電路為範例,但不限於此。 It should be noted that the gate driving circuit operation method in this embodiment can be applied to the foregoing embodiments, for example, FIG. 3, FIG. 4, FIG. 6 or FIG. 7, and the components of each of the foregoing embodiments are described. For its related connection relationship, you can view the aforementioned implementation The illustrations are not repeated here. Furthermore, the gate driving circuit operating method of the present invention is based on the gate driving circuit shown in FIG. 3 as an example, but is not limited thereto.
由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。 From the detailed description of the above preferred embodiments, it is hoped that the features and spirit of the present invention can be described more clearly, and the scope of the present invention is not limited by the preferred embodiments disclosed above. On the contrary, the intention is to cover various changes and equivalent arrangements within the scope of the patents to be applied for in the present invention. With the above detailed description of the preferred embodiments, it is hoped that the features and spirit of the present invention can be more clearly described, and the scope of the present invention is not limited by the preferred embodiments disclosed above. On the contrary, the intention is to cover various changes and equivalent arrangements within the scope of the patents to be applied for in the present invention.
3‧‧‧閘極驅動電路 3‧‧‧Gate driving circuit
31‧‧‧前四級驅動電路 31‧‧‧The first four levels of driving circuit
32‧‧‧後四級驅動電路 32‧‧‧Last four-stage driving circuit
T11‧‧‧輸入電晶體 T11‧‧‧input transistor
QS1、QS2‧‧‧電路組 QS1, QS2‧‧‧Circuit Group
T12‧‧‧輸出電晶體 T12‧‧‧ Output Transistor
ST、ST1~ST8‧‧‧閘極控制訊號 ST 、 ST1 ~ ST8‧‧‧Gate control signal
VssQ‧‧‧第一電壓 VssQ‧‧‧first voltage
Vcom‧‧‧第二電壓 Vcom‧‧‧Second Voltage
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| TWI721473B (en) * | 2019-06-28 | 2021-03-11 | 友達光電股份有限公司 | Device substrate |
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| CN113823221B (en) * | 2021-09-13 | 2022-09-02 | 京东方科技集团股份有限公司 | Driving circuit of display panel, compensation method of display panel and display device |
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| CN107452317B (en) | 2020-09-29 |
| TW201905878A (en) | 2019-02-01 |
| CN107452317A (en) | 2017-12-08 |
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