[go: up one dir, main page]

TWI699010B - Package, light-emitting device, and methods of manufacturing the package and light-emitting device - Google Patents

Package, light-emitting device, and methods of manufacturing the package and light-emitting device Download PDF

Info

Publication number
TWI699010B
TWI699010B TW105131226A TW105131226A TWI699010B TW I699010 B TWI699010 B TW I699010B TW 105131226 A TW105131226 A TW 105131226A TW 105131226 A TW105131226 A TW 105131226A TW I699010 B TWI699010 B TW I699010B
Authority
TW
Taiwan
Prior art keywords
light
resin
reflective film
package
emitting device
Prior art date
Application number
TW105131226A
Other languages
Chinese (zh)
Other versions
TW201724580A (en
Inventor
池田忠昭
林正樹
阿部耕治
宮本公博
Original Assignee
日商日亞化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日亞化學工業股份有限公司 filed Critical 日商日亞化學工業股份有限公司
Publication of TW201724580A publication Critical patent/TW201724580A/en
Application granted granted Critical
Publication of TWI699010B publication Critical patent/TWI699010B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H10W72/01515—
    • H10W72/0198—
    • H10W72/075—
    • H10W74/00—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

There are provided a package and a light-emitting device that each includes a highly accurately arranged reflective film, and methods of manufacturing the package and the light-emitting device. A package 20 includes a pair of leads 23 arranged at a bottom surface 26a of a recess 26, a first resin body 24 forming a lateral wall 26d of the recess 26, a second resin body 25 arranged between the pair of leads 23, and a reflective film 27 covering an inner surface 26b of the lateral wall 26d of the recess 26, and an upper surface 25a and a lower surface 25b of the second resin body 25.

Description

封裝體及發光裝置、與其等之製造方法Package body, light-emitting device, and manufacturing method thereof

本揭示係關於一種封裝體及發光裝置、與其等之製造方法。This disclosure relates to a package, a light-emitting device, and a manufacturing method thereof.

LED(Light Emitting diode，發光二極體)於背光裝置、照明、車輛零件、顯示器等之市場中，小型化、高效率化、高輸出化、高可靠性等之要求增強，從而提供提高了該等性能之發光裝置。尤其是行動設備用之背光裝置之薄型化在進展，隨之發光裝置亦變得超薄型化。為了應對市場之該等需求，提供各種發光裝置。 先前之發光裝置係於陶瓷封裝體或樹脂封裝體上具備反射層，藉由該反射層而提高光之提取效率(例如，參照專利文獻1、專利文獻2)。上述反射層係使用遮罩並利用蒸鍍、濺鍍、塗佈等方法而形成。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2008-160032號公報 [專利文獻2]日本專利特開2014-158011號公報LED (Light Emitting Diode, light-emitting diode) in the market of backlight devices, lighting, vehicle parts, displays, etc., the requirements for miniaturization, high efficiency, high output, high reliability, etc. have increased, thus providing improved Light-emitting devices of equal performance. In particular, the thinning of backlight devices for mobile devices is progressing, and light-emitting devices have also become ultra-thin. In order to meet these demands of the market, various light emitting devices are provided. The conventional light-emitting device is provided with a reflective layer on a ceramic package or a resin package, and the light extraction efficiency is improved by the reflective layer (for example, refer to Patent Document 1 and Patent Document 2). The above-mentioned reflective layer is formed by methods such as vapor deposition, sputtering, and coating using a mask. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2008-160032 [Patent Document 2] Japanese Patent Laid-Open No. 2014-158011

[發明所欲解決之問題] 於使用上述遮罩之方法中，於具備一對引線之小型發光裝置或封裝體中，由於引線間之區域為微小區域，故而不易進行遮罩之定位，從而難以精度良好地於引線間形成反射層。 又，於未使用遮罩之情形時，例如於藉由塗佈形成反射層之情形時，由於在塗佈反射層之材料後該反射層材料會流動，故而難以形成於需要反射層之區域，又，有反射層之膜厚產生不均之虞。 因此，本揭示之實施形態提供一種具備高精度地配置之反射膜之封裝體及發光裝置、與其等之製造方法。 [解決問題之技術手段] 本揭示之實施形態之封裝體具有：一對引線，其等配置於凹部之底面；第1樹脂體，其形成上述凹部之側壁；第2樹脂體，其配置於上述一對引線間；及反射膜，其覆蓋上述凹部之側壁之內表面與上述第2樹脂體之上表面及下表面。 本揭示之實施形態之發光裝置具有上述封裝體、及於上述封裝體之上述凹部之底面配置於上述一對引線之至少一者之發光元件。 本揭示之實施形態之封裝體之製造方法具有如下步驟：準備樹脂成形體，該樹脂成形體具備配置於凹部之底面之一對引線、形成上述凹部之側壁之第1樹脂體、及配置於上述一對引線間之第2樹脂體；至少於上述凹部之底面及上述凹部之側壁之內表面之整面形成反射膜；及於形成有上述反射膜之樹脂成形體中將形成於上述凹部內之上述一對引線之上述反射膜剝離。 本揭示之實施形態之發光裝置之製造方法具備如下步驟：準備樹脂成形體，該樹脂成形體具備配置於凹部之底面之一對引線、形成上述凹部之側壁之第1樹脂體、及配置於上述一對引線間之第2樹脂體；至少於上述凹部之底面及上述凹部之側壁之內表面之整面形成反射膜；於形成有上述反射膜之樹脂成形體中將形成於上述凹部內之上述一對引線之上述反射膜剝離；及將發光元件載置於剝離上述反射膜後之上述一對引線之至少一者。 本揭示之實施形態之陶瓷封裝體具有：一對配線，其等配置於凹部之底面；第1陶瓷體，其形成上述凹部之側壁；第2陶瓷體，其配置於上述一對配線間；及反射膜，其覆蓋上述凹部之側壁之內表面與上述第2陶瓷體之上表面及下表面。 [發明之效果] 本揭示之實施形態之封裝體及發光裝置具備高精度地配置之反射膜。又，本揭示之實施形態之封裝體之製造方法及發光裝置之製造方法可形成高精度地配置之反射膜。[Problem to be solved by the invention] In the method of using the above-mentioned mask, in a small light-emitting device or package with a pair of leads, since the area between the leads is a small area, it is difficult to position the mask, which makes it difficult The reflective layer is formed accurately between the leads. In addition, when the mask is not used, for example, when the reflective layer is formed by coating, the reflective layer material will flow after coating the reflective layer material, so it is difficult to form in the area where the reflective layer is needed. In addition, there is a possibility of unevenness in the film thickness of the reflective layer. Therefore, the embodiment of the present disclosure provides a package and a light-emitting device having a reflective film arranged with high precision, and a manufacturing method thereof. [Technical Means to Solve the Problem] The package of the embodiment of the present disclosure has: a pair of leads arranged on the bottom surface of the recess; a first resin body forming the side wall of the recess; and a second resin body arranged on the above A pair of leads; and a reflective film covering the inner surface of the side wall of the recess and the upper and lower surfaces of the second resin body. The light-emitting device of the embodiment of the present disclosure has the above-mentioned package, and a light-emitting element in which at least one of the pair of leads is arranged on the bottom surface of the concave portion of the package. The manufacturing method of the package according to the embodiment of the present disclosure has the following steps: preparing a resin molded body including a pair of leads arranged on the bottom surface of the recess, a first resin body forming the side wall of the recess, and A second resin body between a pair of leads; a reflective film is formed on at least the entire surface of the bottom surface of the recess and the inner surface of the side wall of the recess; and the resin molded body formed with the reflective film will be formed in the recess The reflection film of the pair of leads is peeled off. The method of manufacturing the light emitting device of the embodiment of the present disclosure includes the steps of preparing a resin molded body having a pair of leads arranged on the bottom surface of the recess, a first resin body forming the side wall of the recess, and A second resin body between a pair of leads; a reflective film is formed on at least the entire surface of the bottom surface of the concave portion and the inner surface of the side wall of the concave portion; Peeling the reflective film of the pair of leads; and placing the light-emitting element on at least one of the pair of leads after peeling the reflective film. The ceramic package of the embodiment of the present disclosure has: a pair of wires arranged on the bottom surface of the recess; a first ceramic body forming the side wall of the recess; and a second ceramic body arranged between the pair of wires; and The reflective film covers the inner surface of the side wall of the recess and the upper and lower surfaces of the second ceramic body. [Effects of the Invention] The package and the light-emitting device of the embodiment of the present disclosure are provided with a reflective film arranged with high precision. In addition, the manufacturing method of the package and the manufacturing method of the light-emitting device of the embodiment of the present disclosure can form a reflective film that is arranged with high precision.

以下，對表示實施形態之一例之封裝體之製造方法及發光裝置之製造方法、與封裝體及發光裝置進行說明。再者，於以下之說明中所參照之圖式係概略性地表示本實施形態者，故而存在各構件之尺度或間隔、位置關係等被誇大或者構件之一部分圖示被省略之情況。又，於以下之說明中，關於相同之名稱及符號，原則上表示相同或者相同性質之構件，並適當省略詳細說明。 (第1實施形態) ＜發光裝置之構成＞ 使用圖式進行說明。圖1係表示第1實施形態之發光裝置之概略之圖，且係表示發光裝置之立體圖。圖2係表示第1實施形態之發光裝置之概略之圖，且係發光裝置之俯視圖。圖3係表示第1實施形態之發光裝置之概略之圖，且係圖2之III-III剖面箭視圖。 第1實施形態之發光裝置1具備包含第1樹脂體24及第2樹脂體25之封裝體20、發光元件30、第3樹脂體40、及導線50。 ＜封裝體之構成＞ 封裝體20具備引線23、第1樹脂體24、第2樹脂體25、及反射膜27，引線23與第1樹脂體24及第2樹脂體25係一體成形。 封裝體20之整體之形狀係上表面側為正方形狀之大致長方體。封裝體20具有下表面20a、側面20b及上表面20c作為外側之面。封裝體20之高度、長度、寬度並未特別限定，可根據目的及用途適當選擇。封裝體20之形狀亦可設為大致立方體、大致六角柱等多邊形形狀。 此處，封裝體20之下表面20a相對於外部之安裝基板等成為安裝面。下表面20a係由形成於第1樹脂體24之下表面及第2樹脂體25之下表面25b之反射膜27、及自反射膜27露出之引線23構成。下表面20a中之引線23於除封裝體20之周緣側部分(第1樹脂體24之下表面)及隔開地設置有第2樹脂體25之部分以外之部分自反射膜27露出。 封裝體20之側面20b係由第1樹脂體24、及於第1樹脂體24之角部露出之引線23構成。側面20b中之引線23於封裝體20之四個角呈矩形狀露出。再者，於側面20b中，第1樹脂體24與引線23形成於大致同一平面。 封裝體20之上表面20c於俯視下形成為矩形狀之中央具備向上方開口之凹部26。於上表面20c之側，於凹部26之開口部26c之周緣上表面、凹部26之內表面26b及於凹部26之底面26a配置於一對引線23、23間之第2樹脂體25之上表面25a設置有反射膜27。 [凹部] 於凹部26之底面26a露出引線23，於該引線23載置有發光元件30。凹部26之側壁26d係由第1樹脂體24構成。側壁26d之外表面構成封裝體20之側面20b。 側壁26d之內表面26b可設置平滑之傾斜，亦可設為於表面設置細小之凹凸而使光散射之形狀。 凹部26具有俯視下為圓形狀之開口部26c。作為開口部26c之形狀，以圓形而表示，但可採用大致橢圓形狀、大致多邊形形狀等。又，凹部26成為側壁26d之內表面26b向開口部26c之側擴大之形狀。 [引線] 引線23配置於凹部26之底面26a。引線23係以成為正負一對之方式隔開配置。一對引線23、23分別相當於陽極電極、陰極電極，意指導電性各不相同。 引線23之長度、寬度、厚度並無特別限定，可根據目的及用途適當選擇。引線23之材質例如較佳為銅或銅合金。引線23之最表面例如較佳為由銀或鋁等反射率較高之金屬材料被覆。 於本實施形態中，對露出於凹部26之底面26a之引線23及封裝體20之下表面20a之引線23實施鍍覆。 對引線23之上表面(凹部26之底面26a)實施有鍍覆，因此可提高來自發光元件30之光之反射率。 又，引線23由於底面(封裝體20之下表面20a)被鍍覆，故而與焊料等導電性構件之接合強度增加。 再者，於本實施形態中，引線23自側面20b露出之面並未被鍍覆。未被鍍覆之原因在於，該面直接使用如下文所述般將封裝體20單片化時所呈現之切斷面之狀態。 [第1樹脂體、第2樹脂體] 第1樹脂體24固定引線23，並且構成凹部26之側壁26d。第2樹脂體25配置於一對引線23、23間。第1樹脂體24及第2樹脂體25係由相同之樹脂一體成形。以下，將構成第1樹脂體24及第2樹脂體25之樹脂稱為第1樹脂。 作為第1樹脂，例如可列舉熱塑性樹脂或熱硬化性樹脂。 於熱塑性樹脂之情形時，例如可使用聚鄰苯二甲醯胺樹脂、液晶聚合物、聚對苯二甲酸丁二酯(PBT)、不飽和聚酯等。 於熱硬化性樹脂之情形時，例如可使用環氧樹脂、改性環氧樹脂、聚矽氧樹脂、改性聚矽氧樹脂、胺基甲酸酯樹脂、丙烯酸酯樹脂等。 為了於凹部26之側壁26d之內表面26b使光高效率地反射，亦可使第1樹脂含有光反射構件。例如氧化鈦、氧化鋅、氧化鋯、氧化鋁、氧化矽、玻璃填料、二氧化矽、氧化鎂、氧化銻、氫氧化鋁、硫酸鋇、碳酸鎂、碳酸鋇對水分等相對穩定且為高折射率，又，導熱性亦優異，故而較佳。 [反射膜] 反射膜27設置於第1樹脂體24及第2樹脂體25之上表面側及下表面側。具體而言，反射膜27係以至少覆蓋凹部26之側壁26d之內表面26b與第2樹脂體25之上表面25a及下表面25b之方式而設置。由於在反射膜27之形成範圍之部分來自發光元件30之光量相對較多，故而藉由設置反射膜27，可尤其有助於提高來自發光裝置1之正面方向之光提取效率。再者，露出之一對引線23未被反射膜27覆蓋。 於本實施形態中，於封裝體20之側面20b，第1樹脂體24未被反射膜27覆蓋。其原因在於，該面直接使用如下文所述般將封裝體20單片化時所呈現之切斷面之狀態。 反射膜27係含有光反射構件之粒子之薄膜。該反射膜27可使於有機溶劑中分散有光反射構件之粒子而成之分散液乾燥而形成。分散液中之光反射構件之含有率例如可設為1～30重量%。 有機溶劑並無特別限定，例如可列舉乙醇、異丙醇、二甲苯、甲苯、丙酮、松油醇、二乙二醇單丁醚、己烷、十三烷、丙二醇單甲醚乙酸酯(PGMEA)、甲基異丁基酮(MIBK)、甲基乙基酮等。為了調整與基材之潤濕性，有機溶劑亦可以1種以上之混合溶液之形式使用。 光反射構件例如較佳為TiO2 (氧化鈦)、Al2 O3 (氧化鋁)、ZrO2 (氧化鋯)、ZnO(氧化鋅)等金屬氧化物或玻璃填料、SiO2 (氧化矽)等白色顏料等於可見光區域折射率較高之材料。折射率較佳為1.4～2.8，更佳為1.5～2.8。其中，折射率較高之氧化鈦由於在可見光區域可獲得良好之反射性，故而較佳。利用光反射構件形成有反射膜之第1樹脂體24與第2樹脂體25之反射率較佳為可見光之反射率為70%以上或者80%以上。尤其是於發光元件之出射之波長區域中反射率較佳為70%以上或者80%以上。光反射構件所包含之氧化鈦等白色顏料之調配量只要為50重量%以上、95重量%以下即可，較佳為60重量%～95重量%，但並不限定於此。 又，光反射構件之粒子進而較佳為平均粒徑為1～1000 nm、較佳為5～300 nm、進而較佳為10～200 nm之奈米粒子。藉由使用奈米粒子，可形成為薄膜且反射率較高之反射膜27，故而適合用以將發光裝置1設為薄型。藉由使奈米粒子之分散液乾燥而形成反射膜27，可製成不易自第1樹脂體24及第2樹脂體25之表面剝落之緻密之膜，故而可構成可靠性較高之發光裝置1。 作為奈米粒子之粒徑，為了獲得良好之光反射性及與第1樹脂體24及第2樹脂體25之良好之密接性，平均粒徑較佳為設為1～100 nm，尤佳為設為1～50 nm。 再者，於本說明書中，奈米粒子之粒徑於使用雷射繞射法之測定中設為粒徑之平均值。粒子之大小使用測定之個數基準(個數分佈)。 又，反射膜27所含有之光反射構件與第1樹脂體24及第2樹脂體25所含有之光反射構件可為同種物質，亦可為不同種類之物質，又，該等物質之粒徑可相同，亦可不同。 於封裝體之俯視下之外緣之短邊之長度為例如100～200 μm左右之發光裝置中，設置於載置發光元件之凹部之反射膜之膜厚假設具有達10 μm左右之厚度，則因反射膜而凹部變窄。因此，於凹部只能載置相對小型且低輸出之發光元件，結果，該發光裝置相對較暗地發光。 又，關於在載置發光元件之凹部之底面跨及引線間之導線50，於在配置於該引線間之樹脂部上設置反射膜之情形時，若反射膜較厚，則無法將導線50之形狀設置為平滑。假設反射膜具有達10 μm左右之厚度，則導線50成為尖突彎曲之形狀，故而擔心因熱而導致第3樹脂體40收縮或膨脹，藉此因應力而導致導線50斷裂、斷線、連接部剝落等。 因此，於本實施形態之封裝體20中，反射膜27之平均厚度T尤佳為以能以穩定之膜厚形成且可獲得良好之反射性之方式設為10～1000 nm、較佳為10～500 nm、進而較佳為50～200 nm。藉此，發光裝置1可將相對大型且高輸出之發光元件30載置於封裝體20之凹部26，故而可相對明亮地發光。又，藉由將形成於第2樹脂體25之上表面25a之反射膜27設定為上述範圍內之膜厚，可將於凹部26之底面26a跨及引線23、23間之導線50之形狀維持為平滑地彎折之形狀。再者，於形成反射膜27時，藉由使以高濃度含有奈米粒子之分散液乾燥，可容易地形成10～500 nm左右之薄膜。 若封裝體20例如焊接於外部之安裝基板，則焊料層接著於封裝體20之下表面20a。假設於第2樹脂體25之表面不具備反射膜27之情形時，透過第2樹脂體25之光被焊料層吸收而無法提取至外部。相對於此，本實施形態之封裝體20於第2樹脂體25之上表面25a及下表面25b具備反射膜27，因此可抑制光被第2樹脂體25吸收，且即便少量光被第2樹脂體25吸收，亦會於第2樹脂體25之下表面25b之反射膜27向上方反射，因此可提高光提取效率。 [發光元件] 發光元件30於封裝體20之凹部26之底面26a配置於一對引線23之至少一者。發光元件30經由導線50與引線23電性連接。此處所使用之發光元件30之形狀或大小等並無特別限定。作為發光元件30之發光色，可根據用途選擇任意波長者。例如，作為藍色(波長430～490 nm之光)之發光元件，可使用GaN系或InGaN系。作為InGaN系，可使用InX AlY Ga1-X-Y N(0≦X≦1、0≦Y≦1、X＋Y＜1)等。再者，發光元件30可使用面朝上構造之發光元件，此外亦可使用面朝下構造之發光元件。 [第3樹脂體] 第3樹脂體40覆蓋安裝於封裝體20之凹部26內之發光元件30等。第3樹脂體40係為了保護發光元件30等免受外力、灰塵、水分等之傷害，並且使發光元件30等之耐熱性、耐候性、耐光性良好而設置。 以下將構成第3樹脂體40之樹脂稱為第3樹脂。作為第3樹脂，可列舉熱硬化性樹脂、例如聚矽氧樹脂、環氧樹脂、尿素樹脂等透明之材料。除此種材料以外，亦可含有螢光體或光反射率較高之物質等填料，以使具有特定之功能。 第3樹脂例如藉由混合螢光體，可容易地調整發光裝置1之色調。 作為第3樹脂所含有之填料，例如可較佳地使用SiO2 、TiO2 、Al2 O3 、ZrO2 、MgO等光反射率較高之物質。又，為了切斷所需以外之波長，例如可使用有機或無機著色染料或著色顏料。 [導線] 導線50係用以將發光元件30或保護元件等電子零件與引線23電性連接之導電性之配線。作為導線50之材質，可列舉使用Au(金)、Ag(銀)、Cu(銅)、Pt(鉑)、Al(鋁)等金屬及其等之合金者，尤佳為使用導熱率等優異之Au。再者，導線50之粗細度並無特別限定，可根據目的及用途適當選擇。 [其他] 亦可於發光裝置1設置齊納二極體作為保護元件。齊納二極體可與發光元件30隔開地載置於凹部26之底面26a之引線23上。又，亦可採用齊納二極體載置於凹部26之底面26a之引線23上並於其上載置發光元件30之構成。 本實施形態之封裝體20及發光裝置1具備高精度地配置之反射膜27，因此可使來自發光元件或螢光體之光較先前進一步反射，從而可將光提取至發光上表面。發光裝置1可提高光提取效率，且可提高光通量。 [發光裝置之製造方法] 以下，對以將與複數個發光裝置對應之複數個基板呈陣列狀配置之集合基板之形態製造之情形進行說明。第1實施形態之發光裝置之製造方法進行如下步驟：準備作為集合基板之樹脂成形體、形成反射膜、將一部分反射膜剝離、載置發光元件、利用第3樹脂覆蓋發光元件、及單片化步驟。 ＜準備樹脂成形體之步驟＞ 圖4係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係引線框架之俯視圖。圖5係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係樹脂成形體之俯視圖。圖6係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係圖5之VI-VI剖面箭視圖。 樹脂成形體21具備引線框架22及樹脂部29，且具備與複數個發光裝置對應之複數個凹部26。於引線框架22以特定之圖案形成有貫通孔22a。特定之圖案於單片化時以成為異種電極之方式被劃分至2個引線區域，且保持該2條引線並且包圍引線區域。由於沿著貫通孔22a進行單片化，故而較佳為直線形狀。引線框架22可使用平板狀之金屬板，但亦可使用設置有階差或凹凸之金屬板。引線框架22係對平板狀之金屬板進行衝壓加工或蝕刻加工等而成者。 貫通孔22a係以於將樹脂成形體21單片化而製成封裝體20時使引線23成為正負一對之方式形成。又，貫通孔22a係以於將樹脂成形體21切斷時縮小切斷引線23之面積之方式形成。例如，以成為正負一對引線23之方式於橫向上設置貫通孔22a。若細長之貫通孔之寬度(一對引線23、23間之寬度W)為1 mm以下、例如500～800 μm，則可使封裝體小型化，因此較佳。又，將貫通孔22a設置於相當於對樹脂成形體21進行單片化時之切取部分之位置。但是，為了使引線框架22之一部分不會脫落或使引線23於封裝體20之側面20b露出，預先將引線框架22之一部分連結。例如，由於使用切割刀片90(參照圖14)對樹脂成形體21進行切割，故而貫通孔22a較佳為縱向及橫向或者傾斜地呈直線形成。相當於該被切割之部分之位置之貫通孔22a、22a間成為1個封裝體20之構成。 引線框架22例如係使用銅或銅合金等電良導體而形成。又，為了提高來自發光元件30之光之反射率，可實施銀或鋁等之金屬鍍覆。較佳為於設置貫通孔22a後或進行蝕刻處理後等且利用上模具與下模具夾持之前實施金屬鍍覆，但亦可於引線框架22與樹脂部29一體成形之前實施金屬鍍覆。 引線框架22中之引線23係指相當於成型後之引線23之部分，且係單片化之後之狀態。引線23配置於經單片化時之凹部26之底面26a。樹脂部29係指相當於成型後之第1樹脂體24與第2樹脂體25之部分，且係單片化之前之狀態。其中，第1樹脂體24形成經單片化時之凹部26之側壁26d。第2樹脂體25配置於經單片化時之一對引線23間。 製造樹脂成形體21之步驟例如具有下述(1)至(5)之步驟。 (1)準備具有貫通孔22a之平板狀之引線框架22。 (2)利用被上下分割之塑模模具之上模具與下模具夾持引線框架22。 (3)將樹脂部29之材料、即含有氧化鈦等光反射構件之第1樹脂注入至模具。 (4)使所注入之第1樹脂硬化或固化。 (5)自模具中將成形體取出並切除第1樹脂之注入痕跡。 再者，於使用熱硬化性樹脂作為第1樹脂之情形時，較佳為藉由轉注成形進行製造。於該情形時，為了使熱硬化性樹脂硬化，而於烘箱中進行加熱處理。再者，亦可利用射出成形、壓縮成形、擠出成形使樹脂成形體21形成。 ＜形成反射膜之步驟＞ 圖7係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係表示反射膜之形成方法之一例之圖。圖8係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係具備反射膜之成形基板之俯視圖。圖9係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係圖8之IX-IX剖面箭視圖。 於形成反射膜27之步驟中，於經單片化時之封裝體20中至少於凹部26之底面26a及凹部26之側壁26d之內表面26b之整面形成反射膜27。此處，所謂凹部26之底面26a係於經單片化時之封裝體20中相當於第2樹脂體25之上表面25a之部分。 於本實施形態中，將所準備之樹脂成形體21浸漬於作為光反射構件之分散液之有機溶劑71中，其後，使其乾燥，藉此形成反射膜27。浸漬時間或乾燥時間能以於樹脂成形體21上形成平均厚度T為10～300 nm之反射膜27之方式適當設定。作為該有機溶劑71，使用光反射構件之粒子(奈米粒子)分散於有機溶劑中而成之漿料。有機溶劑71主要包含具有1～100 nm之粒徑之金屬氧化物。奈米粒子較佳為氧化鈦。 藉由利用如上所述般使奈米粒子分散於有機溶劑中而成之漿料對樹脂成形體21進行塗佈，可追隨封裝體之複雜形狀，以高精度形成緻密之反射膜27。即，藉由利用光反射構件之分散液於樹脂成形體21形成反射膜27，例如可針對凹部26之內側之第2樹脂體25之上表面25a或下表面25b等絕緣部選擇性地成膜包含光反射構件之反射膜27。 以下，將形成有反射膜27後之樹脂成形體表述為樹脂成形體21b。樹脂成形體21b於其整個表面形成有反射膜27。即，於經單片化時之封裝體20中之引線23、第1樹脂體24及第2樹脂體25之整個表面形成有反射膜27。 ＜將一部分反射膜剝離之步驟＞ 圖10係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係表示將反射膜剝離之方法之一例之圖。圖11係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係剝離反射膜後之成形基板之俯視圖。圖12係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係圖11之XII-XII剖面箭視圖。 將一部分反射膜27剝離之步驟係將於樹脂成形體21b中形成於凹部26內之一對引線23之反射膜剝離之步驟。於該步驟中，首先，將樹脂成形體21b浸漬於電解液中並於樹脂成形體21b流通電流。例如可使用電解毛邊去除裝置。 電解毛邊去除裝置具備電解槽80與電路，電解槽80被特定之電解液81填滿。於電源82之陰極連接有陰極板83，於電源82之陽極連接有陽極板84，陰極板83及陽極板84浸漬於電解液81中。再者，複數個陰極板83及陽極板84例如於被絕緣之狀態下以格子狀配置，各陰極板83兼作保持電解處理對象物之功能。樹脂成形體21b之引線框架22電性連接於陰極板83。樹脂成形體21b係以其整體浸漬於電解液81中之狀態保持於陰極板83。 若打開電解毛邊去除裝置之開關85，則藉由電解而於陰極側產生氫。於樹脂成形體21b通電之電流值亦可為電解毛邊去除裝置之通常之電流值，但為了保留所需之反射膜27並將無用之一部分反射膜27高效率地去除，較佳為以500 A/m2 ～3000 A/m2 之電流密度通電。更佳為1000 A/m2 ～2500 A/m2 。 只要為電解毛邊去除，則會於形成於引線23上之反射膜27之部分產生電位，因此產生氫，而表面之反射膜27剝離。再者，於形成於第1樹脂體24及第2樹脂體25上之反射膜27之部分不會產生電位，因此不會產生氫，而表面之反射膜27不會剝離。 亦可於樹脂成形體21b交替地流通直流電流與交流電流。於該情形時，流通直流電流之期間長於流通交流電流之期間。藉由如此般於產生氫之期間之中途設置不會產生氫之期間，可抑制使反射膜27剝離之力。其結果為，可防止所需之反射膜27被其附近之無用之反射膜27拉拽而剝離。 於將一部分反射膜27剝離之步驟中具有於進行電解毛邊去除後將懸浮於樹脂成形體21c之一對引線23、23上之反射膜去除之步驟。於該步驟中，例如可使用噴水器。藉此，可提高下述發光元件30等電子零件之安裝或打線接合之可靠性。藉由至此為止之步驟，可形成樹脂部之表面具備複雜形狀、高精度、緻密且反射率較高之反射膜27之封裝體20之集合體。再者，此處自第1樹脂體24露出之引線23之形狀係由圓與直線構成，但即便於俯視下為彎曲狀、波狀、凹凸狀等複雜形狀，亦可以高精度形成反射膜27。 以下，將去除無用之一部分反射膜27後之樹脂成形體記為樹脂成形體21c。於將該樹脂成形體21c單片化之情形時，成為圖1之封裝體20。於該封裝體20中，反射膜27於凹部26之側壁26d之內表面26b形成至與引線23之交界為止，且於第2樹脂體25之上表面25a及下表面25b形成至與引線23之交界為止。又，反射膜27於封裝體20之下表面20a，於第1樹脂體24之下表面形成至與引線23之交界為止。進而，以沿著第1樹脂體24與引線23之交界之方式形成反射膜27。 ＜載置發光元件之步驟＞ 圖13係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係載置有發光元件之成形基板之剖視圖。於載置發光元件30之步驟中，將發光元件30載置於配置於樹脂成形體21c之凹部26內之一對引線23、23之至少一者。此處，由於設為發光元件30為面朝上構造者，因此對引線23上之供安裝發光元件30之部位塗佈黏合劑樹脂，並安裝發光元件30，繼而為了使黏合劑樹脂硬化，於烘箱中進行加熱處理。 再者，發光裝置1之製造方法亦可具有載置保護元件之步驟。於該情形時，於對樹脂成形體21c之凹部26內供安裝保護元件之部位塗佈Ag糊劑後安裝保護元件，且為了使Ag糊劑硬化，於烘箱中進行加熱處理。 於發光裝置1之製造方法中，繼而使用打線接合裝置，利用導電性之導線50使發光元件30與引線23電性連接。再者，於載置有保護元件之情形時，使保護元件與引線電性連接。以下，將安裝有發光元件30後之樹脂成形體記為樹脂成形體21d。 ＜利用第3樹脂覆蓋發光元件之步驟＞ 圖14係表示第1實施形態之發光裝置之製造步驟之概略的圖，係且發光元件由第3樹脂體覆蓋之樹脂成形體之剖視圖。利用樹脂覆蓋發光元件之步驟係於樹脂成形體21d中，使用例如樹脂塗佈裝置自發光元件30上塗佈第3樹脂。第3樹脂除熱硬化性樹脂以外，亦可含有螢光體、無機填料、有機填料之至少1種。繼塗佈之後，為了使第3樹脂硬化，於烘箱中進行加熱處理。 第3樹脂之填充量只要為能夠被覆發光元件30等電子零件或導線50等之量即可。於使該材料之填充量為必要最小限度之情形時，將第3樹脂體40之表面製成如圖示般大致平坦之形狀。再者，於使第3樹脂體40具有透鏡功能之情形時，亦可使第3樹脂體40之表面隆起而製成炮彈型形狀或凸透鏡形狀。以下，將形成有第3樹脂體40後之樹脂成形體記為樹脂成形體21e。 ＜單片化步驟＞ 單片化步驟係將樹脂成形體21e切斷而獲得經單片化之發光裝置之步驟。於樹脂成形體21e之引線框架22以特定之圖案形成有貫通孔22a，於通過除配置於凹部26之貫通孔22a以外之其他貫通孔22a之位置將樹脂成形體21e切斷。例如，將樹脂成形體21e貼附於切割片，利用切割刀片90將樹脂成形體21e之樹脂部29與引線框架22同時切斷。 根據本實施形態之封裝體及發光裝置之製造方法，於不使用遮罩之情況下將所準備之樹脂成形體21浸漬於作為光反射構件之分散液之有機溶劑71中，於整體形成反射膜27後，將一部分無用之反射膜27去除，因此可將反射膜27形成於所需之區域。 又，於上述製造方法中，若將於整個表面形成有反射膜27之樹脂成形體21b浸漬於電解液中，並於連接於陰極之樹脂成形體21b流通直流電流，則可藉由氫之產生而容易地自引線23上將無用之反射膜27去除。因此，例如於配置於引線23、23間之第2樹脂體25之上表面25a及下表面25b等微小區域亦可精度良好地將反射膜27形成至與引線23之交界為止。又，亦可以沿著第1樹脂體24與引線23之交界之方式形成反射膜27。 (第2實施形態) 圖15係表示第2實施形態之發光裝置之製造步驟之概略的圖，且係發光元件由絕緣膜覆蓋之樹脂成形體之剖視圖。本實施形態之發光裝置之製造方法亦可於載置發光元件之步驟之後且利用第3樹脂覆蓋發光元件之步驟之前進而具有利用絕緣膜覆蓋發光元件之步驟。 於在載置發光元件30後使用導線50之情形時，絕緣膜60較佳為於設置導線50後形成。於本實施形態中，於安裝了發光元件30後之樹脂成形體21d中自發光元件30及導線50上形成絕緣膜60。 絕緣膜60較佳為以被覆樹脂成形體21d之上表面之大致整個區域之方式設置。作為絕緣膜60之材料，較佳為透光性之材料，又，較佳為主要使用無機化合物。具體而言，可列舉Al2 O3 、SiO2 、TiO2 、ZrO2 、ZnO、Nb2 O5 、MgO、In2 O3 、Ta2 O5 、HfO2 、SeO、Y2 O3 等氧化物或SiN、AlN、AlON等氮化物、MgF2 等氟化物。該等可單獨使用，且亦可混合使用。或者亦可使絕緣膜積層。 關於絕緣膜60之膜厚，較佳為薄為於第3樹脂體40/絕緣膜60之界面或絕緣膜60/引線23之界面不會因多重反射而產生光之損耗。 絕緣膜60之膜厚薄於第3樹脂體40之膜厚。絕緣膜60之膜厚大致固定。膜厚之較佳之範圍根據用作絕緣膜60之材料之種類而略微不同，但絕緣膜60之膜厚較佳為約1 nm～300 nm，更佳為5 nm～100 nm。於將絕緣膜60製成多層之情形時，較佳為使層整體之膜厚成為該範圍內。 此種絕緣膜60可藉由原子層沈積(Atomic Layer Deposition，ALD)法、濺鍍法、蒸鍍法等而形成。其中，ALD法所形成之覆膜緻密，且可形成具有階差(凹凸)之形狀之被覆性較高且厚度均勻之覆膜，故而較佳。尤其是利用ALD法而形成之包含Al2 O3 之覆膜對水分等環境之阻隔性較高，故而較佳。藉此，例如可有效地抑制引線23上之鍍銀之變色。 (第3實施形態) 圖16係表示第3實施形態之發光裝置之製造步驟之概略的圖，且係另一樹脂成形體之俯視圖。於本實施形態之封裝體及發光裝置之製造方法中，例如亦可準備圖16所示之樹脂成形體21C。樹脂成形體21C具備引線框架22C、及相當於各個封裝體之複數個樹脂部29C，各樹脂部29C具備凹部26。於樹脂成形體21C中樹脂部29C被單片化，因此於單片化步驟中僅引線框架22C被切斷。 引線框架22C係板狀之構件，且於凹部26之周圍具有特定形狀之貫通孔223。貫通孔223係以於將樹脂成形體21C單片化時引線23成為正負一對之方式形成。引線框架22C具備包圍貫通孔223之周圍之殼體220、懸架引線221、及懸桿引線222。 懸架引線221自殼體220向貫通孔223之側突出並連接於引線23。該懸架引線221係用以將樹脂部29C及引線23、23支持於殼體220之部位，並且係於單片化時被切離者。 懸桿引線222係以自殼體220向貫通孔223之側突出並且與懸架引線221正交之方式配置。該懸桿引線222係用以利用其前端部支持樹脂部29C之部位，並且不會被切斷。又，於單片化後利用特定之治具頂出懸桿引線222之基端部，藉此可容易地將封裝體自引線框架22C卸除。 若進行使用樹脂成形體21C形成反射膜之步驟，則除樹脂部29C之上表面20c以外，亦於側面20b形成有反射膜27。即，於經單片化時之封裝體中，第1樹脂體24及第2樹脂體25係整面由反射膜27覆蓋。因此，可製造亦於側面20b形成有反射膜27之封裝體及發光裝置。藉此，即便少許光自凹部26之側壁26d之內表面26b被吸收至第1樹脂體24，亦會於封裝體之側面20b之反射膜27反射，因此可提高光提取效率。 (第4實施形態) ＜發光裝置之構成＞ 圖17係表示第4實施形態之發光裝置之概略之圖，且係表示發光裝置之立體圖。圖18係表示第4實施形態之發光裝置之概略之圖，且係表示發光裝置之前視圖。圖19係表示第4實施形態之發光裝置之概略之圖，且係圖18之XIX-XIX剖面箭視圖。發光裝置1B具備封裝體20B、發光元件30B、第3樹脂體40、及導線50。於該發光裝置1B中，封裝體20B及發光元件30B之形狀與第1實施形態之發光裝置1不同。以下，對與第1實施形態之發光裝置1相同之構成標註相同之符號並省略說明。發光元件30B與第1實施形態之發光元件30之不同點係於俯視下形成為橫長之四邊形。 封裝體20B之外形具有沿作為發光裝置1B之厚度方向之Z軸方向扁平地形成之大致長方體形狀，適合較佳地用於液晶顯示器之背光裝置用之光源等之邊視型之安裝。封裝體20B具備引線23、第1樹脂體24、第2樹脂體25、及反射膜27，引線23與第1樹脂體24及第2樹脂體25一體成形。第1樹脂體24具有朝發光裝置1B之正面側(Y軸之負方向)開口之凹部26。即，凹部26之側壁26d係由第1樹脂體24構成。 於封裝體20B中，凹部26於前視時具有橫長之開口部。更具體而言，開口於前視時呈長方形之下邊之中央部以梯形狀向下方隆起之八邊形之形狀。又，凹部26之底面26a具有呈橫長之八邊形之長條形狀。一對引線23、23以露出之方式設置於凹部26之底面26a，且於一引線23搭載有發光元件30B。 於凹部26之側壁26d之內表面可設置平滑之傾斜，亦可設為於表面設置細小之凹凸而使光散射之形狀。再者，亦可不設置傾斜而由相對於凹部26之底面26a大致垂直之面構成。凹部26之側壁26d中於發光裝置1B之厚度方向(Z軸方向)上相互對向地設置之上壁部26e及下壁部26f形成為薄於其他壁部。即，上壁部26e及下壁部26f形成為薄於在發光裝置1B之寬度方向(X軸方向)上相互對向地設置之2個側壁部。設置於凹部26之底面26a之一對引線23係以自下壁部26f之外側面之側突出，進而彎曲並沿著第1樹脂體24之下表面延伸之方式設置。 封裝體20B於發光裝置1B之背面側形成有利用射出成形法形成第1樹脂體24及第2樹脂體25時之向模具內注入樹脂材料之澆口之痕跡。澆口痕跡係藉由第1樹脂體24而形成，並由反射膜27覆蓋。第2樹脂體25配置於一對引線23、23間。於該第2樹脂體25中，於發光裝置1B之正面之面(上表面25a)設置有反射膜27。又，於第1樹脂體24中，凹部26之側壁26d之內表面26b與包含凹部26之開口部26c之周圍之面之封裝體20B之表面由反射膜27覆蓋。再者，於凹部26內填充有第3樹脂體40。 該發光裝置1B與第1實施形態同樣地，可以集合基板之形態製造。再者，引線框架於經鑄模後被切斷，其後，引線框架中之特定部位彎曲而形成封裝體20B之引線23、23之外部連接端子部。 發光裝置1B以適合邊視型之安裝之方式設置有引線23、23。又，作為邊視型之發光裝置1B，以成為更薄型之方式構成有封裝體20B。邊視型之封裝體由於設置於厚度方向上之側壁之厚度較薄，故而邊視型之發光裝置於厚度方向上容易漏光。然而，發光裝置1B係樹脂體整體由反射膜27覆蓋，且上壁部26e及下壁部26f之內表面及外表面亦由反射膜27覆蓋。因此，可減少自薄壁部分漏出之光，從而可提高光通量。 (第5實施形態) ＜發光裝置之構成＞ 圖20係表示第5實施形態之發光裝置之概略之圖，且係發光裝置之俯視圖。圖21係表示第5實施形態之發光裝置之概略之圖，且係圖20之XXI-XXI剖面箭視圖。發光裝置1C具備封裝體20C、發光元件30、第3樹脂體40、及導線50。於該發光裝置1C中，封裝體20C之形狀與第1實施形態之發光裝置1不同。以下，對與第1實施形態之發光裝置1相同之構成標註相同之符號並省略說明。 封裝體20C於凹部26之底面26a具備元件安裝部28。該封裝體20C除一對引線23、23以外亦具備元件安裝部28。元件安裝部28係供接合發光元件30之焊接部(晶片焊墊部)。發光元件30載置於元件安裝部28，且分別與一對引線23、23電性連接。 於本實施形態中，元件安裝部28係由與引線23相同之導電材料構成。但是，由於自一對引線23、23向發光元件30通電，因此不對元件安裝部28通電。此種元件安裝部28例如可藉由於圖16所示之引線框架22C中，使與1個封裝體對應之1個懸桿引線222延伸並使其向配置於一對引線23、23之間隙之形狀變形而形成。 再者，於利用例如環氧樹脂或聚矽氧樹脂等樹脂構件構成元件安裝部28之情形時，亦可將該元件安裝部28形成於例如任一引線23上。 (第6實施形態) ＜發光裝置之構成＞ 圖22係表示第6實施形態之發光裝置之概略之剖視圖。發光裝置1D具備陶瓷封裝體20D、發光元件30、第3樹脂體40、及導線50。於該發光裝置1D中，陶瓷封裝體20D之形狀及材料與第1實施形態之發光裝置1不同。以下，對與第1實施形態之發光裝置1相同之構成標註相同之符號並省略說明。 陶瓷封裝體20D整體之形狀為大致長方體，並且於上表面設置有凹部26。該陶瓷封裝體20D具有第2陶瓷體140、及設置於其上之第1陶瓷體130。第1陶瓷體130及第2陶瓷體140係1片絕緣性之片材或由複數片絕緣性之片材積層而成。 作為第1陶瓷體130及第2陶瓷體140之材料，例如可列舉陶瓷。陶瓷較佳為自氧化鋁(Al2 O3 )、氮化鋁(AlN)、莫來石等中選擇主材料。藉由向該等主材料中添加燒結助劑等進行燒結而獲得陶瓷之基材。亦可使用低溫同時焙燒陶瓷。 為了使光高效率地反射，陶瓷之基材含有光反射率較高之材料(例如氧化鈦等白色填料等)。又，可於焙燒前之坯片之階段實施各種圖案形狀之配線。於對陶瓷之材料進行焙燒後，將金、銀、銅或者鋁作為材料，並藉由鍍覆法或濺鍍將金屬材料配置於基底層上。 第2陶瓷體140為大致板狀，且於第1陶瓷體130形成有孔。該等第2陶瓷體140與第1陶瓷體130積層而形成凹部26。第1陶瓷體130形成凹部26之側壁26d。於凹部26以自其底面26a遍及陶瓷封裝體20D之下表面之方式隔開地配置有一對配線110、120。於一對配線110、120間配置有第2陶瓷體140。於用作發光裝置1D時，配線110、120相當於陽極電極、陰極電極。發光元件30例如載置於配線110上。又，設置於發光元件30之上表面之元件電極(未圖示)與配線110、120係藉由導線50而分別連接。並且，發光元件30係藉由第3樹脂體40而密封。 陶瓷封裝體20D之下表面之外側係安裝於外部之基板之側之面。於陶瓷封裝體20D之下表面側設置有自配線110、120分別經由配線111、121而連接之配線112、122。即，配線112、122係經由配線110、120而分別與發光元件30之2個元件電極連接。再者，配置於凹部26之配線110、120之最表面例如較佳為被銀等反射率較高之金屬材料被覆。 反射膜27覆蓋凹部26之側壁26d之內表面26b。又，反射膜27覆蓋第2陶瓷體140之上表面、具體而言凹部26之底面26a上配置於配線110與配線120之間之部分。又，反射膜27覆蓋第2陶瓷體140之下表面、具體而言陶瓷封裝體20D之下表面上配置於配線112與配線122之間之部分。進而，反射膜27覆蓋第1陶瓷體130之上表面、具體而言凹部26之開口部26c之周圍之面。該發光裝置1D與第1實施形態同樣地，可以集合基板之形態製造。 [實施例] 為了確認本發明之發光裝置之性能而進行以下實驗。製造與發光裝置1相同之形狀之發光裝置(以下稱為實施例1)。實施例1之發光裝置之製造方法如下所述。 準備作為集合基板之樹脂成形體21。樹脂成形體21之引線框架22使用由銅合金形成且對表面實施有鍍銀者。第1樹脂體24之材料使用含有10重量%之氧化鈦作為光反射構件之環氧樹脂。又，第2樹脂體25亦使用含有10重量%之氧化鈦之環氧樹脂。第1樹脂體24及第2樹脂體25所使用之氧化鈦使用平均粒徑為0.2 μm者。又，為了形成反射膜，準備將甲苯用作有機溶劑且將具有粒徑為30 nm之氧化鈦用作光反射構件之分散液(15重量%)之漿料。 於形成反射膜之步驟中，將樹脂成形體21浸漬於該漿料中，其後，使之乾燥而產生形成有反射膜27之樹脂成形體21b。接下來，於將一部分反射膜剝離之步驟中，準備電解毛邊去除裝置，將水作為電解液，以1500 A/m2 之電流密度對樹脂成形體21b進行通電。接下來，利用噴水器將懸浮於自電解槽80取出之樹脂成形體21c上之樹脂毛邊及反射膜去除。又，使用峰值波長450 nm之GaN系之藍色發光元件作為發光元件30。進而，使用含有YAG(Yttrium Aluminium Garnet，釔-鋁-石榴石)螢光體之聚矽氧樹脂作為第3樹脂體40。於作為金屬部分之引線框架22上並未殘留反射膜27，而反射膜27僅配置於第1樹脂體24之部分。 所完成之實施例1之發光裝置之平面尺寸為3 mm×3 mm，一對引線23、23間之寬度W為600 μm。又，以下，將未進行形成反射膜之步驟而同樣地製造之發光裝置稱為比較例1。 ＜色調比較之結果＞ 使用色度測定裝置之實驗之結果為，比較例1及實施例1之發光裝置具有xy色度值中之x值及y值均為0.34之色調。關於色調，可得出可忽略反射膜27之有無所導致之差異之結論。 ＜光通量比較之結果＞ 使用光通量測定裝置之實驗之結果為，於將對比較例1進行測定所得之光通量設為100%時，對實施例1進行測定所得之光通量成為101%。確認到藉由反射膜27將光通量提高了1%之效果。 [表1]

Figure 105131226-A0304-0001
以上，對本揭示之實施形態之封裝體及發光裝置、與其等之製造方法具體地進行了說明，但本發明之主旨並不限定於該等記載，應該基於申請專利範圍之記載而廣泛地解釋。又，理所當然，基於該等記載進行了各種變更、改變等者亦包含於本發明之主旨中。 [產業上之可利用性] 本實施形態之發光裝置可利用於液晶顯示器之背光裝置光源、各種照明器具、大型顯示器、廣告或目的地嚮導等各種顯示裝置、進而數位攝錄影機、傳真機、影印機、掃描儀等中之圖像讀取裝置、投影儀裝置等各種光源。Hereinafter, a method of manufacturing a package and a method of manufacturing a light-emitting device, as well as the package and the light-emitting device, which show an example of the embodiment will be described. In addition, the drawings referred to in the following description schematically represent the present embodiment, so there are cases where the dimensions, intervals, positional relationships, etc. of each member are exaggerated or some of the members are omitted. In addition, in the following description, the same names and symbols indicate in principle the same or the same components, and detailed descriptions are appropriately omitted. (First Embodiment) <Configuration of Light-Emitting Device> It will be described using drawings. FIG. 1 is a diagram showing the outline of the light-emitting device of the first embodiment, and is a perspective view showing the light-emitting device. FIG. 2 is a diagram showing the outline of the light-emitting device of the first embodiment, and is a plan view of the light-emitting device. Fig. 3 is a schematic diagram showing the light emitting device of the first embodiment, and is a cross-sectional arrow view of Fig. 2 along line III-III. The light-emitting device 1 of the first embodiment includes a package 20 including a first resin body 24 and a second resin body 25, a light-emitting element 30, a third resin body 40, and wires 50. <Configuration of Package> The package 20 includes a lead 23, a first resin body 24, a second resin body 25, and a reflective film 27, and the lead 23 is integrally molded with the first resin body 24 and the second resin body 25. The overall shape of the package body 20 is a substantially rectangular parallelepiped with a square shape on the upper surface side. The package 20 has a lower surface 20a, a side surface 20b, and an upper surface 20c as outer surfaces. The height, length, and width of the package 20 are not particularly limited, and can be appropriately selected according to the purpose and use. The shape of the package body 20 may also be a polygonal shape such as a substantially cube or a substantially hexagonal column. Here, the lower surface 20a of the package 20 becomes a mounting surface with respect to an external mounting substrate or the like. The lower surface 20a is composed of a reflective film 27 formed on the lower surface of the first resin body 24 and the lower surface 25b of the second resin body 25, and the lead 23 exposed from the reflective film 27. The leads 23 in the lower surface 20a are exposed from the reflective film 27 except for the peripheral side portion of the package body 20 (the lower surface of the first resin body 24) and the portion where the second resin body 25 is separately provided. The side surface 20b of the package 20 is composed of a first resin body 24 and leads 23 exposed at the corners of the first resin body 24. The leads 23 in the side surface 20b are exposed at the four corners of the package body 20 in a rectangular shape. Furthermore, in the side surface 20b, the first resin body 24 and the lead 23 are formed in substantially the same plane. The upper surface 20c of the package 20 is provided with a concave portion 26 opening upward in the center formed in a rectangular shape in plan view. On the side of the upper surface 20c, the upper surface of the peripheral edge of the opening 26c of the recess 26, the inner surface 26b of the recess 26, and the bottom surface 26a of the recess 26 are arranged on the upper surface of the second resin body 25 between the pair of leads 23, 23 The reflection film 27 is provided at 25a. [Concave portion] The lead 23 is exposed on the bottom surface 26a of the recess 26, and the light-emitting element 30 is placed on the lead 23. The side wall 26 d of the recess 26 is composed of the first resin body 24. The outer surface of the side wall 26 d constitutes the side surface 20 b of the package body 20. The inner surface 26b of the side wall 26d can be provided with a smooth inclination, or can be provided with a shape in which small concavities and convexities are provided on the surface to scatter light. The recessed portion 26 has an opening 26c having a circular shape in plan view. The shape of the opening 26c is represented by a circle, but a substantially elliptical shape, a substantially polygonal shape, or the like can be adopted. In addition, the recessed portion 26 has a shape in which the inner surface 26b of the side wall 26d expands to the side of the opening portion 26c. [Lead wire] The lead wire 23 is arranged on the bottom surface 26 a of the recess 26. The lead wires 23 are spaced apart so as to form a positive and negative pair. A pair of lead wires 23 and 23 are respectively equivalent to the anode electrode and the cathode electrode, meaning that they have different electrical properties. The length, width, and thickness of the lead 23 are not particularly limited, and can be appropriately selected according to the purpose and application. The material of the lead 23 is preferably copper or copper alloy, for example. The outermost surface of the lead 23 is preferably coated with a metal material with high reflectivity such as silver or aluminum. In this embodiment, the leads 23 exposed on the bottom surface 26a of the recess 26 and the leads 23 on the bottom surface 20a of the package 20 are plated. The upper surface of the lead 23 (the bottom surface 26a of the recess 26) is plated, so the reflectance of the light from the light-emitting element 30 can be improved. In addition, since the bottom surface of the lead 23 (the lower surface 20a of the package 20) is plated, the bonding strength with conductive members such as solder increases. Furthermore, in this embodiment, the surface of the lead 23 exposed from the side surface 20b is not plated. The reason why it is not plated is that the surface directly uses the state of the cut surface that appears when the package 20 is singulated as described below. [First resin body, second resin body] The first resin body 24 fixes the lead 23 and constitutes the side wall 26 d of the recess 26. The second resin body 25 is arranged between the pair of leads 23 and 23. The first resin body 24 and the second resin body 25 are integrally molded from the same resin. Hereinafter, the resin constituting the first resin body 24 and the second resin body 25 is referred to as a first resin. Examples of the first resin include thermoplastic resins and thermosetting resins. In the case of a thermoplastic resin, for example, polyphthalamide resin, liquid crystal polymer, polybutylene terephthalate (PBT), unsaturated polyester, etc. can be used. In the case of a thermosetting resin, for example, epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, urethane resin, acrylate resin, etc. can be used. In order to efficiently reflect light on the inner surface 26b of the side wall 26d of the recess 26, the first resin may contain a light reflecting member. For example, titanium oxide, zinc oxide, zirconium oxide, aluminum oxide, silicon oxide, glass fillers, silicon dioxide, magnesium oxide, antimony oxide, aluminum hydroxide, barium sulfate, magnesium carbonate, and barium carbonate are relatively stable and highly refractive to moisture. The thermal conductivity is also excellent, so it is better. [Reflective Film] The reflective film 27 is provided on the upper surface side and the lower surface side of the first resin body 24 and the second resin body 25. Specifically, the reflective film 27 is provided so as to cover at least the inner surface 26b of the side wall 26d of the recess 26 and the upper surface 25a and lower surface 25b of the second resin body 25. Since the amount of light from the light-emitting element 30 is relatively large in the part of the formation range of the reflective film 27, the provision of the reflective film 27 can particularly help improve the light extraction efficiency from the front direction of the light-emitting device 1. Furthermore, the exposed pair of leads 23 is not covered by the reflective film 27. In this embodiment, the first resin body 24 is not covered by the reflective film 27 on the side surface 20 b of the package 20. The reason is that this surface directly uses the state of the cut surface that appears when the package 20 is singulated as described below. The reflective film 27 is a thin film containing particles of a light reflective member. The reflection film 27 can be formed by drying a dispersion in which particles of the light reflection member are dispersed in an organic solvent. The content rate of the light reflection member in the dispersion liquid can be set to, for example, 1 to 30% by weight. The organic solvent is not particularly limited, and examples thereof include ethanol, isopropanol, xylene, toluene, acetone, terpineol, diethylene glycol monobutyl ether, hexane, tridecane, and propylene glycol monomethyl ether acetate ( PGMEA), methyl isobutyl ketone (MIBK), methyl ethyl ketone, etc. In order to adjust the wettability with the substrate, the organic solvent can also be used in the form of a mixed solution of more than one type. The light reflecting member is preferably, for example, metal oxides such as TiO 2 (titanium oxide), Al 2 O 3 (alumina), ZrO 2 (zirconia), ZnO (zinc oxide) or glass fillers, SiO 2 (silicon oxide), etc. White pigment is equal to the material with higher refractive index in the visible light region. The refractive index is preferably 1.4 to 2.8, more preferably 1.5 to 2.8. Among them, titanium oxide with a higher refractive index is preferable because it can obtain good reflectivity in the visible light region. The reflectance of the first resin body 24 and the second resin body 25 with the reflective film formed by the light reflecting member is preferably 70% or more or 80% or more of visible light. In particular, the reflectance in the wavelength region where the light-emitting element emits is preferably 70% or more or 80% or more. The blending amount of white pigments such as titanium oxide contained in the light reflecting member may be 50% by weight or more and 95% by weight or less, and is preferably 60% by weight to 95% by weight, but is not limited to this. In addition, the particles of the light reflection member are further preferably nano particles having an average particle diameter of 1 to 1000 nm, preferably 5 to 300 nm, and still more preferably 10 to 200 nm. By using nano particles, the reflective film 27 can be formed into a thin film with high reflectivity, so it is suitable for making the light emitting device 1 thin. By drying the nanoparticle dispersion liquid to form the reflective film 27, a dense film that is not easily peeled off from the surface of the first resin body 24 and the second resin body 25 can be made, so a highly reliable light-emitting device can be constructed 1. As the particle size of the nanoparticle, in order to obtain good light reflectivity and good adhesion with the first resin body 24 and the second resin body 25, the average particle size is preferably set to 1-100 nm, and more preferably Set to 1～50 nm. Furthermore, in this specification, the particle size of the nanoparticle is set as the average particle size in the measurement using the laser diffraction method. The size of the particles uses the number basis of the measurement (number distribution). In addition, the light reflecting member contained in the reflective film 27 and the light reflecting member contained in the first resin body 24 and the second resin body 25 may be the same substance or different kinds of substances, and the particle size of these substances Can be the same or different. In a light-emitting device where the length of the short side of the outer edge of the package in a plan view is, for example, about 100-200 μm, the thickness of the reflective film provided in the recess where the light-emitting element is placed is assumed to have a thickness of about 10 μm. The recesses are narrowed due to the reflective film. Therefore, only a relatively small and low-output light-emitting element can be placed in the recess, and as a result, the light-emitting device emits light relatively darkly. In addition, regarding the wire 50 between the bottom surface of the recess where the light-emitting element is placed, and between the leads, when a reflective film is provided on the resin portion arranged between the leads, if the reflective film is thick, the wire 50 cannot be The shape is set to smooth. Assuming that the reflective film has a thickness of about 10 μm, the wire 50 has a sharply curved shape. Therefore, it is feared that the third resin body 40 may shrink or expand due to heat, thereby causing the wire 50 to break, disconnect, or connect due to stress. Flaking and so on. Therefore, in the package 20 of the present embodiment, the average thickness T of the reflective film 27 is particularly preferably set to be 10 to 1000 nm, preferably 10 in a manner that can be formed with a stable film thickness and can obtain good reflectivity. -500 nm, more preferably 50-200 nm. Thereby, the light-emitting device 1 can place a relatively large-sized and high-output light-emitting element 30 in the recess 26 of the package body 20, so that it can emit light relatively brightly. In addition, by setting the reflective film 27 formed on the upper surface 25a of the second resin body 25 to have a film thickness within the above range, the shape of the conductive wire 50 between the bottom surface 26a of the recess 26 and the leads 23 and 23 can be maintained It is a smoothly bent shape. Furthermore, when forming the reflective film 27, by drying a dispersion liquid containing nano particles at a high concentration, a thin film of about 10 to 500 nm can be easily formed. If the package body 20 is soldered to an external mounting substrate, for example, the solder layer is attached to the lower surface 20 a of the package body 20. Assuming that the surface of the second resin body 25 is not provided with the reflective film 27, the light passing through the second resin body 25 is absorbed by the solder layer and cannot be extracted to the outside. In contrast, the package 20 of this embodiment is provided with the reflective film 27 on the upper surface 25a and the lower surface 25b of the second resin body 25. Therefore, it is possible to prevent light from being absorbed by the second resin body 25, and even a small amount of light is absorbed by the second resin body 25. The body 25 absorbs and also reflects upward on the reflective film 27 on the lower surface 25b of the second resin body 25, thereby improving the light extraction efficiency. [Light-emitting element] The light-emitting element 30 is disposed on at least one of the pair of leads 23 on the bottom surface 26a of the recess 26 of the package body 20. The light-emitting element 30 is electrically connected to the lead 23 via the wire 50. The shape or size of the light-emitting element 30 used here is not particularly limited. As the emission color of the light-emitting element 30, any wavelength can be selected according to the application. For example, as a blue light-emitting element (light with a wavelength of 430 to 490 nm), a GaN system or an InGaN system can be used. As the InGaN system, In X Al Y Ga 1-XY N (0≦X≦1, 0≦Y≦1, X+Y<1), etc. can be used. Furthermore, the light-emitting element 30 can be a light-emitting element with a face-up structure, and in addition, a light-emitting element with a face-down structure can also be used. [Third Resin Body] The third resin body 40 covers the light-emitting element 30 and the like mounted in the recess 26 of the package body 20. The third resin body 40 is provided to protect the light-emitting element 30 and the like from external forces, dust, moisture, etc., and to make the light-emitting element 30 and the like have good heat resistance, weather resistance, and light resistance. Hereinafter, the resin constituting the third resin body 40 is referred to as a third resin. Examples of the third resin include thermosetting resins, such as transparent materials such as silicone resin, epoxy resin, and urea resin. In addition to such materials, it can also contain fillers such as phosphors or substances with higher light reflectivity to provide specific functions. The third resin can easily adjust the color tone of the light-emitting device 1 by mixing phosphors, for example. As the filler contained in the third resin, for example, SiO 2 , TiO 2 , Al 2 O 3 , ZrO 2 , MgO and other materials with high light reflectivity can be preferably used. Furthermore, in order to cut off wavelengths other than necessary, for example, organic or inorganic coloring dyes or coloring pigments can be used. [Wire] The wire 50 is a conductive wire used to electrically connect the light-emitting element 30 or the electronic parts such as the protective element to the lead 23. As the material of the lead wire 50, metals such as Au (gold), Ag (silver), Cu (copper), Pt (platinum), Al (aluminum) and their alloys are used, and the use of excellent thermal conductivity is particularly preferred. The Au. In addition, the thickness of the lead wire 50 is not particularly limited, and can be appropriately selected according to the purpose and application. [Others] A Zener diode can also be provided in the light-emitting device 1 as a protection element. The Zener diode can be placed on the lead 23 of the bottom surface 26 a of the recess 26 apart from the light-emitting element 30. In addition, a configuration in which the Zener diode is placed on the lead 23 of the bottom surface 26a of the recess 26 and the light-emitting element 30 is placed thereon can also be adopted. The package 20 and the light-emitting device 1 of this embodiment are equipped with the reflective film 27 arranged with high precision, so that the light from the light-emitting element or the phosphor can be reflected further than before, so that the light can be extracted to the upper surface of the light-emitting. The light emitting device 1 can improve the light extraction efficiency and can increase the luminous flux. [Manufacturing Method of Light-Emitting Device] Hereinafter, a case of manufacturing in a form of a collective substrate in which a plurality of substrates corresponding to a plurality of light-emitting devices are arranged in an array will be described. The method of manufacturing the light-emitting device of the first embodiment includes the following steps: preparing a resin molded body as a collective substrate, forming a reflective film, peeling off a part of the reflective film, placing the light-emitting element, covering the light-emitting element with a third resin, and singulating step. <Step of Preparing Resin Molded Body> FIG. 4 is a diagram showing the outline of the manufacturing step of the light emitting device of the first embodiment, and is a plan view of the lead frame. 5 is a diagram showing the outline of the manufacturing steps of the light emitting device of the first embodiment, and is a plan view of the resin molded body. 6 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a VI-VI cross-sectional arrow view of FIG. 5. The resin molded body 21 includes a lead frame 22 and a resin portion 29, and includes a plurality of recessed portions 26 corresponding to a plurality of light emitting devices. The lead frame 22 has through holes 22a formed in a specific pattern. When the specific pattern is singulated, it is divided into two lead regions in a manner of being a dissimilar electrode, and the two leads are maintained and surround the lead region. Since it is singulated along the through hole 22a, it is preferably a linear shape. The lead frame 22 can use a flat metal plate, but can also use a metal plate provided with steps or unevenness. The lead frame 22 is formed by punching or etching a flat metal plate. The through hole 22a is formed so that the lead 23 becomes a positive and negative pair when the resin molded body 21 is singulated to form the package 20. Moreover, the through hole 22a is formed so that the area of the cut lead 23 is reduced when the resin molded body 21 is cut. For example, a through hole 22a is provided in the lateral direction so as to become a pair of positive and negative leads 23. If the width of the elongated through hole (the width W between the pair of leads 23 and 23) is 1 mm or less, for example, 500 to 800 μm, the package body can be miniaturized, which is preferable. In addition, the through hole 22a is provided at a position corresponding to the cut-out portion when the resin molded body 21 is singulated. However, in order to prevent a part of the lead frame 22 from falling off or to expose the leads 23 on the side surface 20b of the package body 20, a part of the lead frame 22 is connected in advance. For example, since the cutting blade 90 (refer to FIG. 14) is used to cut the resin molded body 21, the through-hole 22a is preferably formed in a straight line in the longitudinal direction and the lateral direction or obliquely. The through holes 22a and 22a corresponding to the positions of the cut portions constitute one package 20. The lead frame 22 is formed using, for example, a good electrical conductor such as copper or copper alloy. In addition, in order to increase the reflectance of light from the light emitting element 30, metal plating of silver or aluminum may be applied. It is preferable to perform metal plating after the through-hole 22a is provided or after performing an etching process and before being clamped by the upper mold and the lower mold. However, the metal plating may be performed before the lead frame 22 and the resin portion 29 are integrally formed. The lead 23 in the lead frame 22 refers to the part corresponding to the lead 23 after molding, and is in the state after singulation. The lead 23 is arranged on the bottom surface 26a of the recess 26 when singulated. The resin portion 29 refers to a portion corresponding to the first resin body 24 and the second resin body 25 after molding, and is in a state before singulation. Among them, the first resin body 24 forms the side wall 26d of the recess 26 when singulated. The second resin body 25 is arranged between a pair of leads 23 when singulated. The steps of manufacturing the resin molded body 21 include, for example, the following steps (1) to (5). (1) Prepare a flat lead frame 22 having a through hole 22a. (2) The lead frame 22 is clamped by the upper mold and the lower mold of the plastic mold that are divided up and down. (3) The material of the resin portion 29, that is, the first resin containing a light reflecting member such as titanium oxide, is injected into the mold. (4) Harden or cure the injected first resin. (5) Take out the molded body from the mold and cut off the injection marks of the first resin. Furthermore, when a thermosetting resin is used as the first resin, it is preferably manufactured by transfer molding. In this case, in order to harden the thermosetting resin, heat treatment is performed in an oven. Furthermore, the resin molded body 21 may be formed by injection molding, compression molding, or extrusion molding. <Step of Forming Reflective Film> FIG. 7 is a diagram showing the outline of the manufacturing process of the light-emitting device of the first embodiment, and is a diagram showing an example of a method of forming a reflective film. FIG. 8 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a plan view of a molded substrate provided with a reflective film. 9 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a cross-sectional arrow view of IX-IX in FIG. 8. In the step of forming the reflective film 27, the reflective film 27 is formed on at least the entire surface of the bottom surface 26a of the recess 26 and the inner surface 26b of the side wall 26d of the recess 26 in the package 20 when singulated. Here, the bottom surface 26a of the recessed portion 26 is a portion corresponding to the upper surface 25a of the second resin body 25 in the package 20 when it is singulated. In this embodiment, the prepared resin molded body 21 is immersed in the organic solvent 71 as the dispersion liquid of the light reflection member, and then dried, thereby forming the reflection film 27. The immersion time or the drying time can be appropriately set so that the reflective film 27 having an average thickness T of 10 to 300 nm is formed on the resin molded body 21. As the organic solvent 71, a slurry in which particles (nanoparticles) of the light reflection member are dispersed in an organic solvent is used. The organic solvent 71 mainly contains metal oxides having a particle size of 1-100 nm. The nanoparticle is preferably titanium oxide. By coating the resin molded body 21 with a slurry formed by dispersing nano particles in an organic solvent as described above, it is possible to follow the complex shape of the package body and form a dense reflective film 27 with high precision. That is, by forming the reflective film 27 on the resin molded body 21 using a dispersion of the light reflecting member, for example, the insulating portion such as the upper surface 25a or the lower surface 25b of the second resin body 25 inside the recess 26 can be selectively formed. The reflective film 27 includes a light reflective member. Hereinafter, the resin molded body after the reflective film 27 is formed will be referred to as the resin molded body 21b. The resin molded body 21b has a reflective film 27 formed on the entire surface thereof. That is, the reflective film 27 is formed on the entire surface of the lead 23, the first resin body 24, and the second resin body 25 in the package 20 when it is singulated. <Step of peeling off a part of the reflective film> FIG. 10 is a diagram showing the outline of the manufacturing process of the light-emitting device of the first embodiment, and is a diagram showing an example of a method of peeling off the reflective film. 11 is a diagram showing the outline of the manufacturing steps of the light emitting device of the first embodiment, and is a plan view of the molded substrate after peeling off the reflective film. FIG. 12 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a cross-sectional arrow view of XII-XII in FIG. 11. The step of peeling a part of the reflective film 27 is a step of peeling off the reflective film of the lead 23 from one of the recesses 26 formed in the resin molded body 21b. In this step, first, the resin molded body 21b is immersed in an electrolytic solution, and a current is passed through the resin molded body 21b. For example, an electrolytic flash removal device can be used. The electrolytic flash removing device includes an electrolytic tank 80 and an electric circuit, and the electrolytic tank 80 is filled with a specific electrolyte 81. A cathode plate 83 is connected to the cathode of the power source 82, and an anode plate 84 is connected to the anode of the power source 82. The cathode plate 83 and the anode plate 84 are immersed in the electrolyte 81. In addition, a plurality of cathode plates 83 and anode plates 84 are arranged in a grid shape in an insulated state, for example, and each cathode plate 83 doubles as a function of holding an electrolytic treatment object. The lead frame 22 of the resin molded body 21 b is electrically connected to the cathode plate 83. The resin molded body 21b is held by the cathode plate 83 in a state where the entirety thereof is immersed in the electrolyte 81. If the switch 85 of the electrolysis flash removing device is turned on, hydrogen is generated on the cathode side by electrolysis. The current value energized to the resin molded body 21b can also be the usual current value of the electrolytic burr removing device, but in order to retain the required reflective film 27 and remove a part of the reflective film 27 efficiently, it is preferably 500 A /m 2 ～3000 A/m 2 current density is energized. More preferably, it is 1000 A/m 2 to 2500 A/m 2 . As long as the burrs are removed by electrolysis, a potential will be generated in the portion of the reflective film 27 formed on the lead 23, so hydrogen is generated, and the reflective film 27 on the surface peels off. Furthermore, no electric potential is generated in the portion of the reflective film 27 formed on the first resin body 24 and the second resin body 25, so hydrogen is not generated, and the reflective film 27 on the surface is not peeled off. Direct current and alternating current may be alternately flowed through the resin molded body 21b. In this case, the period during which direct current flows is longer than the period during which alternating current flows. By providing a period during which no hydrogen is generated in the middle of the period during which hydrogen is generated in this way, the force to peel off the reflective film 27 can be suppressed. As a result, it is possible to prevent the necessary reflective film 27 from being pulled and peeled off by the unnecessary reflective film 27 nearby. In the step of peeling off a part of the reflective film 27, there is a step of removing the reflective film suspended on one of the pair of leads 23, 23 of the resin molded body 21c after electrolytic flash removal. In this step, for example, a water spray can be used. Thereby, the reliability of mounting or wire bonding of electronic components such as the light-emitting element 30 described below can be improved. Through the steps so far, it is possible to form an assembly of the package body 20 with the reflective film 27 of complex shape, high precision, compactness and high reflectivity on the surface of the resin part. Furthermore, the shape of the lead 23 exposed from the first resin body 24 here is composed of a circle and a straight line, but even if it has a complex shape such as a curved, wavy, or uneven shape in a plan view, the reflective film 27 can be formed with high precision. . Hereinafter, the resin molded body after removing a part of the unnecessary reflection film 27 is referred to as a resin molded body 21c. When this resin molded body 21c is singulated, it becomes the package 20 of FIG. In the package 20, the reflective film 27 is formed on the inner surface 26b of the side wall 26d of the recess 26 to the junction with the lead 23, and is formed on the upper surface 25a and the lower surface 25b of the second resin body 25 until it meets the lead 23 Until the junction. In addition, the reflective film 27 is formed on the lower surface 20 a of the package body 20 and on the lower surface of the first resin body 24 to the boundary with the leads 23. Furthermore, the reflective film 27 is formed along the boundary between the first resin body 24 and the lead 23. <Step of Mounting Light-Emitting Element> FIG. 13 is a diagram showing the outline of the manufacturing process of the light-emitting device of the first embodiment, and is a cross-sectional view of the molded substrate on which the light-emitting element is mounted. In the step of placing the light-emitting element 30, the light-emitting element 30 is placed on at least one of the pair of leads 23 and 23 arranged in the recess 26 of the resin molded body 21c. Here, since the light-emitting element 30 has a face-up structure, the adhesive resin is applied to the portion on the lead 23 where the light-emitting element 30 is mounted, and the light-emitting element 30 is mounted. Then, in order to harden the adhesive resin, Heat treatment in the oven. Furthermore, the manufacturing method of the light-emitting device 1 may also have a step of placing a protective element. In this case, the Ag paste is applied to the portion in the recess 26 of the resin molded body 21c where the protection element is to be mounted, and then the protection element is mounted. In order to harden the Ag paste, heat treatment is performed in an oven. In the manufacturing method of the light-emitting device 1, a wire bonding device is then used to electrically connect the light-emitting element 30 and the lead 23 with the conductive wire 50. Furthermore, when the protective element is mounted, the protective element is electrically connected to the lead. Hereinafter, the resin molded body after mounting the light emitting element 30 is referred to as a resin molded body 21d. <Step of Covering Light-Emitting Element with Third Resin> FIG. 14 is a diagram showing an outline of the manufacturing process of the light-emitting device of the first embodiment, and is a cross-sectional view of a resin molded body in which the light-emitting element is covered with a third resin body. The step of covering the light-emitting element with resin is in the resin molded body 21d, and the third resin is applied on the light-emitting element 30 using, for example, a resin coating device. In addition to the thermosetting resin, the third resin may contain at least one of a phosphor, an inorganic filler, and an organic filler. After coating, in order to harden the third resin, heat treatment is performed in an oven. The filling amount of the third resin only needs to be an amount capable of covering electronic components such as the light-emitting element 30 or the wires 50 and the like. When the filling amount of the material is minimized, the surface of the third resin body 40 is formed into a substantially flat shape as shown in the figure. Furthermore, when the third resin body 40 has a lens function, the surface of the third resin body 40 may be raised to form a cannonball shape or a convex lens shape. Hereinafter, the resin molded body after the third resin body 40 is formed is referred to as a resin molded body 21e. <Singulation step> The singulation step is a step of cutting the resin molded body 21e to obtain a singulated light-emitting device. The lead frame 22 of the resin molded body 21e is formed with through holes 22a in a specific pattern, and the resin molded body 21e is cut at positions passing through the through holes 22a except for the through holes 22a arranged in the recesses 26. For example, the resin molded body 21e is attached to a dicing sheet, and the resin portion 29 of the resin molded body 21e and the lead frame 22 are simultaneously cut by the cutting blade 90. According to the manufacturing method of the package and the light-emitting device of this embodiment, the prepared resin molded body 21 is immersed in the organic solvent 71 as the dispersion liquid of the light reflection member without using a mask, and a reflective film is formed as a whole After 27, a part of the useless reflective film 27 is removed, so the reflective film 27 can be formed in a desired area. Furthermore, in the above-mentioned manufacturing method, if the resin molded body 21b with the reflective film 27 formed on the entire surface is immersed in an electrolyte, and a direct current is passed through the resin molded body 21b connected to the cathode, hydrogen can be generated The useless reflective film 27 can be easily removed from the lead 23. Therefore, for example, the reflective film 27 can also be accurately formed to the boundary with the lead 23 in minute areas such as the upper surface 25a and the lower surface 25b of the second resin body 25 arranged between the leads 23 and 23. In addition, the reflective film 27 may be formed along the boundary between the first resin body 24 and the lead 23. (Second Embodiment) FIG. 15 is a diagram showing the outline of the manufacturing process of the light-emitting device of the second embodiment, and is a cross-sectional view of a resin molded body in which a light-emitting element is covered with an insulating film. The method of manufacturing the light-emitting device of this embodiment may further include a step of covering the light-emitting element with an insulating film after the step of mounting the light-emitting element and before the step of covering the light-emitting element with the third resin. When the wire 50 is used after the light-emitting element 30 is placed, the insulating film 60 is preferably formed after the wire 50 is provided. In this embodiment, the insulating film 60 is formed on the light-emitting element 30 and the wire 50 in the resin molded body 21d after the light-emitting element 30 is mounted. The insulating film 60 is preferably provided so as to cover substantially the entire area of the upper surface of the resin molded body 21d. As the material of the insulating film 60, a light-transmitting material is preferable, and it is also preferable to mainly use an inorganic compound. Specifically, Al 2 O 3 , SiO 2 , TiO 2 , ZrO 2 , ZnO, Nb 2 O 5 , MgO, In 2 O 3 , Ta 2 O 5 , HfO 2 , SeO, Y 2 O 3 and other oxidations Nitrides such as SiN, AlN, AlON, and fluorides such as MgF 2 . These can be used alone or in combination. Alternatively, insulating films may be laminated. Regarding the film thickness of the insulating film 60, it is preferable to be as thin as the interface between the third resin body 40/the insulating film 60 or the interface between the insulating film 60/the lead wire 23 and not cause light loss due to multiple reflections. The film thickness of the insulating film 60 is thinner than the film thickness of the third resin body 40. The thickness of the insulating film 60 is approximately constant. The preferable range of the film thickness varies slightly depending on the kind of material used for the insulating film 60, but the film thickness of the insulating film 60 is preferably about 1 nm to 300 nm, more preferably 5 nm to 100 nm. When the insulating film 60 is made into multiple layers, it is preferable that the film thickness of the entire layer falls within this range. Such an insulating film 60 can be formed by an Atomic Layer Deposition (ALD) method, a sputtering method, an evaporation method, or the like. Among them, the coating formed by the ALD method is dense and can form a coating with a stepped (concave-convex) shape with high coverage and uniform thickness, which is preferable. In particular, the Al 2 O 3 coating formed by the ALD method has high barrier properties to the environment such as moisture, so it is preferable. Thereby, for example, the discoloration of the silver plating on the lead 23 can be effectively suppressed. (Third Embodiment) FIG. 16 is a diagram showing the outline of the manufacturing steps of the light emitting device of the third embodiment, and is a plan view of another resin molded body. In the manufacturing method of the package and the light-emitting device of this embodiment, for example, a resin molded body 21C shown in FIG. 16 may be prepared. The resin molded body 21C includes a lead frame 22C and a plurality of resin portions 29C corresponding to each package, and each resin portion 29C includes a recess 26. Since the resin part 29C is singulated in the resin molded body 21C, only the lead frame 22C is cut in the singulation step. The lead frame 22C is a plate-shaped member, and has a through hole 223 of a specific shape around the recess 26. The through hole 223 is formed so that the lead 23 becomes a positive and negative pair when the resin molded body 21C is singulated. The lead frame 22C includes a housing 220 surrounding the through hole 223, a suspension lead 221, and a suspension lead 222. The suspension lead 221 protrudes from the housing 220 to the side of the through hole 223 and is connected to the lead 23. The suspension lead 221 is used to support the resin part 29C and the leads 23 and 23 in the part of the housing 220, and is to be cut off during the singulation. The suspension lead 222 is arranged so as to protrude from the housing 220 to the side of the through hole 223 and to be orthogonal to the suspension lead 221. The suspension lead 222 is used to support the portion of the resin portion 29C by the front end portion thereof without being cut. In addition, after singulation, a specific jig is used to push out the base end of the suspension lead 222, so that the package can be easily removed from the lead frame 22C. When the step of forming a reflective film using the resin molded body 21C is performed, in addition to the upper surface 20c of the resin portion 29C, the reflective film 27 is also formed on the side surface 20b. That is, in the package when it is singulated, the entire surfaces of the first resin body 24 and the second resin body 25 are covered with the reflective film 27. Therefore, it is possible to manufacture a package and a light emitting device in which the reflective film 27 is also formed on the side surface 20b. Thereby, even if a small amount of light is absorbed from the inner surface 26b of the side wall 26d of the concave portion 26 to the first resin body 24, it will be reflected on the reflective film 27 of the side surface 20b of the package body, thereby improving the light extraction efficiency. (Fourth Embodiment) <Configuration of Light-Emitting Device> FIG. 17 is a diagram showing the outline of the light-emitting device of the fourth embodiment, and is a perspective view of the light-emitting device. FIG. 18 is a diagram showing the outline of the light-emitting device of the fourth embodiment, and is a front view of the light-emitting device. FIG. 19 is a diagram showing the outline of the light-emitting device of the fourth embodiment, and is a cross-sectional arrow view of XIX-XIX in FIG. 18. The light-emitting device 1B includes a package 20B, a light-emitting element 30B, a third resin body 40, and wires 50. In this light-emitting device 1B, the shapes of the package 20B and the light-emitting element 30B are different from those of the light-emitting device 1 of the first embodiment. Hereinafter, the same components as those of the light-emitting device 1 of the first embodiment are given the same reference numerals, and the description is omitted. The difference between the light-emitting element 30B and the light-emitting element 30 of the first embodiment is that the light-emitting element 30B is formed in a horizontally long quadrilateral in a plan view. The outer shape of the package 20B has a substantially rectangular parallelepiped shape formed flat in the Z-axis direction as the thickness direction of the light-emitting device 1B, and is suitable for side-view type installations such as light sources for backlight devices of liquid crystal displays. The package 20B includes a lead 23, a first resin body 24, a second resin body 25, and a reflective film 27, and the lead 23 is integrally molded with the first resin body 24 and the second resin body 25. The first resin body 24 has a recess 26 that opens toward the front side (the negative direction of the Y-axis) of the light-emitting device 1B. That is, the side wall 26 d of the recessed portion 26 is composed of the first resin body 24. In the package 20B, the recess 26 has a horizontally long opening in front view. More specifically, the opening is in the shape of an octagon in which the central part of the lower side of the rectangle in front view bulges downward in a trapezoid shape. Moreover, the bottom surface 26a of the recessed part 26 has the elongate shape which is a horizontally long octagonal shape. A pair of leads 23 and 23 are provided on the bottom surface 26 a of the recess 26 in an exposed manner, and a light-emitting element 30B is mounted on a lead 23. The inner surface of the side wall 26d of the recessed portion 26 can be provided with a smooth slope, or can be provided with a shape in which small concavities and convexities are provided on the surface to scatter light. Furthermore, it is not necessary to provide an inclination, and it may be comprised by the surface substantially perpendicular|vertical to the bottom surface 26a of the recessed part 26. In the side wall 26d of the recessed portion 26, the upper wall portion 26e and the lower wall portion 26f are provided so as to face each other in the thickness direction (Z-axis direction) of the light emitting device 1B so as to be thinner than the other wall portions. That is, the upper wall portion 26e and the lower wall portion 26f are formed to be thinner than the two side wall portions provided to face each other in the width direction (X-axis direction) of the light emitting device 1B. A pair of leads 23 provided on the bottom surface 26a of the recessed portion 26 are provided so as to protrude from the outer side surface of the lower wall portion 26f, and then bend and extend along the bottom surface of the first resin body 24. The package 20B is formed on the back side of the light emitting device 1B with traces of gates for injecting the resin material into the mold when the first resin body 24 and the second resin body 25 are formed by the injection molding method. The gate trace is formed by the first resin body 24 and is covered by the reflective film 27. The second resin body 25 is arranged between the pair of leads 23 and 23. In the second resin body 25, a reflective film 27 is provided on the front surface (upper surface 25a) of the light emitting device 1B. Furthermore, in the first resin body 24, the inner surface 26b of the side wall 26d of the recess 26 and the surface of the package body 20B including the surrounding surface of the opening 26c of the recess 26 are covered by the reflective film 27. Furthermore, the third resin body 40 is filled in the recess 26. The light-emitting device 1B can be manufactured in the form of a collective substrate, similarly to the first embodiment. Furthermore, the lead frame is cut after being molded, and then a specific part of the lead frame is bent to form the external connection terminal portions of the leads 23 and 23 of the package 20B. The light emitting device 1B is provided with lead wires 23 and 23 in a manner suitable for side-view type installation. In addition, as the side-view type light-emitting device 1B, a package 20B is configured to be thinner. The side-view type package body has a thinner side wall arranged in the thickness direction, so the side-view type light emitting device is prone to light leakage in the thickness direction. However, the entire light-emitting device 1B-based resin body is covered by the reflective film 27, and the inner and outer surfaces of the upper wall portion 26e and the lower wall portion 26f are also covered by the reflective film 27. Therefore, the light leakage from the thin-walled part can be reduced, and the luminous flux can be increased. (Fifth Embodiment) <Configuration of Light-Emitting Device> FIG. 20 is a diagram showing the outline of the light-emitting device of the fifth embodiment, and is a plan view of the light-emitting device. FIG. 21 is a diagram showing the outline of the light-emitting device of the fifth embodiment, and is a cross-sectional arrow view of XXI-XXI in FIG. 20. The light-emitting device 1C includes a package 20C, a light-emitting element 30, a third resin body 40, and wires 50. In this light-emitting device 1C, the shape of the package 20C is different from that of the light-emitting device 1 of the first embodiment. Hereinafter, the same components as those of the light-emitting device 1 of the first embodiment are given the same reference numerals, and the description is omitted. The package 20C includes an element mounting portion 28 on the bottom surface 26 a of the recess 26. This package 20C also includes an element mounting portion 28 in addition to the pair of leads 23 and 23. The element mounting part 28 is a soldering part (chip pad part) for joining the light-emitting element 30. The light emitting element 30 is placed on the element mounting portion 28 and electrically connected to a pair of leads 23 and 23, respectively. In this embodiment, the component mounting portion 28 is made of the same conductive material as the lead 23. However, since the light-emitting element 30 is energized from the pair of leads 23 and 23, the element mounting portion 28 is not energized. Such a component mounting portion 28 can, for example, extend one suspension lead 222 corresponding to one package in the lead frame 22C shown in FIG. 16 and extend it toward the gap between the pair of leads 23 and 23. The shape is deformed. Furthermore, when the component mounting portion 28 is formed of a resin member such as epoxy resin or silicone resin, the component mounting portion 28 may be formed on any lead 23, for example. (Sixth embodiment) <Configuration of light-emitting device> Fig. 22 is a schematic cross-sectional view showing a light-emitting device of the sixth embodiment. The light emitting device 1D includes a ceramic package 20D, a light emitting element 30, a third resin body 40, and a wire 50. In this light-emitting device 1D, the shape and material of the ceramic package 20D are different from those of the light-emitting device 1 of the first embodiment. Hereinafter, the same components as those of the light-emitting device 1 of the first embodiment are given the same reference numerals, and the description is omitted. The overall shape of the ceramic package 20D is a substantially rectangular parallelepiped, and a recess 26 is provided on the upper surface. The ceramic package 20D has a second ceramic body 140 and a first ceramic body 130 disposed thereon. The first ceramic body 130 and the second ceramic body 140 are one insulating sheet or a laminate of a plurality of insulating sheets. Examples of materials for the first ceramic body 130 and the second ceramic body 140 include ceramics. The ceramic is preferably a main material selected from alumina (Al 2 O 3 ), aluminum nitride (AlN), mullite, and the like. A ceramic base material is obtained by adding a sintering aid etc. to these main materials for sintering. Low-temperature simultaneous firing ceramics can also be used. In order to reflect light efficiently, the ceramic substrate contains materials with high light reflectivity (such as white fillers such as titanium oxide). In addition, wiring of various patterns can be implemented at the stage of the green sheet before firing. After firing the ceramic material, use gold, silver, copper or aluminum as the material, and arrange the metal material on the base layer by plating or sputtering. The second ceramic body 140 has a substantially plate shape, and holes are formed in the first ceramic body 130. The second ceramic bodies 140 and the first ceramic bodies 130 are stacked to form the recesses 26. The first ceramic body 130 forms the side wall 26 d of the recess 26. A pair of wirings 110 and 120 are arranged in the recess 26 so as to extend from the bottom surface 26a of the bottom surface 26a to the bottom surface of the ceramic package 20D. The second ceramic body 140 is arranged between the pair of wirings 110 and 120. When used as a light-emitting device 1D, the wirings 110 and 120 correspond to anode electrodes and cathode electrodes. The light-emitting element 30 is mounted on the wiring 110, for example. In addition, the element electrodes (not shown) provided on the upper surface of the light emitting element 30 and the wirings 110 and 120 are respectively connected by wires 50. In addition, the light-emitting element 30 is sealed by the third resin body 40. The outer side of the lower surface of the ceramic package 20D is the side of the substrate mounted on the outside. Wirings 112 and 122 connected from the wirings 110 and 120 via the wirings 111 and 121 are provided on the lower surface side of the ceramic package 20D. That is, the wirings 112 and 122 are connected to the two element electrodes of the light-emitting element 30 via the wirings 110 and 120, respectively. Furthermore, the outermost surfaces of the wirings 110 and 120 arranged in the recess 26 are preferably covered with a metal material having a high reflectivity, such as silver. The reflective film 27 covers the inner surface 26b of the side wall 26d of the recess 26. In addition, the reflective film 27 covers the upper surface of the second ceramic body 140, specifically the bottom surface 26a of the recess 26, which is arranged between the wiring 110 and the wiring 120. In addition, the reflective film 27 covers the lower surface of the second ceramic body 140, specifically, the portion disposed between the wiring 112 and the wiring 122 on the lower surface of the ceramic package 20D. Furthermore, the reflective film 27 covers the upper surface of the first ceramic body 130, specifically the surface around the opening 26c of the recess 26. The light-emitting device 1D can be manufactured in the form of a collective substrate, as in the first embodiment. [Example] In order to confirm the performance of the light-emitting device of the present invention, the following experiment was performed. A light-emitting device having the same shape as the light-emitting device 1 was manufactured (hereinafter referred to as Example 1). The manufacturing method of the light-emitting device of Example 1 is as follows. A resin molded body 21 as a collective substrate is prepared. The lead frame 22 of the resin molded body 21 is formed of a copper alloy and has silver plating on the surface. As the material of the first resin body 24, epoxy resin containing 10% by weight of titanium oxide as a light reflecting member is used. In addition, the second resin body 25 also uses an epoxy resin containing 10% by weight of titanium oxide. The titanium oxide used in the first resin body 24 and the second resin body 25 has an average particle diameter of 0.2 μm. In addition, in order to form the reflective film, a slurry (15% by weight) in which toluene was used as an organic solvent and titanium oxide having a particle diameter of 30 nm was used as a dispersion liquid (15% by weight) of the light reflection member was prepared. In the step of forming the reflective film, the resin molded body 21 is immersed in the slurry, and thereafter, it is dried to produce the resin molded body 21b on which the reflective film 27 is formed. Next, in the step of peeling a part of the reflective film, an electrolytic burr removing device is prepared, and the resin molded body 21b is energized at a current density of 1500 A/m 2 using water as an electrolyte. Next, the resin burr and the reflective film suspended on the resin molded body 21c taken out from the electrolytic cell 80 are removed by a water jet. In addition, a GaN-based blue light-emitting element with a peak wavelength of 450 nm was used as the light-emitting element 30. Furthermore, as the third resin body 40, a silicone resin containing a YAG (Yttrium Aluminium Garnet) phosphor was used. The reflective film 27 is not left on the lead frame 22 which is a metal part, and the reflective film 27 is only arranged on the part of the first resin body 24. The planar size of the light-emitting device of the completed embodiment 1 is 3 mm×3 mm, and the width W between a pair of leads 23 and 23 is 600 μm. In addition, in the following, a light-emitting device manufactured in the same manner without performing the step of forming a reflective film is referred to as Comparative Example 1. <Result of hue comparison> As a result of an experiment using a chromaticity measuring device, the light-emitting devices of Comparative Example 1 and Example 1 have a hue whose x value and y value in the xy chromaticity value are both 0.34. Regarding the color tone, it can be concluded that the difference caused by the presence or absence of the reflective film 27 can be ignored. <Result of luminous flux comparison> The result of the experiment using the luminous flux measuring device is that when the luminous flux measured in Comparative Example 1 is set to 100%, the luminous flux measured in Example 1 becomes 101%. The effect of increasing the luminous flux by 1% by the reflective film 27 was confirmed. [Table 1]
Figure 105131226-A0304-0001
 As mentioned above, the package and the light-emitting device of the embodiment of the present disclosure, and the manufacturing method thereof have been specifically described, but the gist of the present invention is not limited to these descriptions, and should be broadly interpreted based on the description of the scope of patent application. In addition, it is a matter of course that various changes, changes, etc. based on these descriptions are also included in the gist of the present invention. [Industrial Applicability] The light-emitting device of this embodiment can be used in various display devices such as backlight device light source of liquid crystal display, various lighting equipment, large-scale display, advertisement or destination guide, digital video camera, facsimile machine Various light sources such as image reading devices, projector devices, etc. in photocopiers, scanners, etc.

1‧‧‧發光裝置 1B‧‧‧發光裝置 1C‧‧‧發光裝置 1D‧‧‧發光裝置 20‧‧‧封裝體 20B‧‧‧封裝體 20C‧‧‧封裝體 20D‧‧‧陶瓷封裝體 20a‧‧‧底面 20b‧‧‧側面 20c‧‧‧上表面 21‧‧‧樹脂成形體 21C‧‧‧樹脂成形體 21b‧‧‧樹脂成形體 21c‧‧‧樹脂成形體 21d‧‧‧樹脂成形體 21e‧‧‧樹脂成形體 22‧‧‧引線框架 22a‧‧‧貫通孔 22C‧‧‧引線框架 23‧‧‧引線 24‧‧‧第1樹脂體(樹脂部) 25‧‧‧第2樹脂體(樹脂部) 25a‧‧‧上表面 25b‧‧‧下表面 26‧‧‧凹部 26a‧‧‧底面 26b‧‧‧內表面 26c‧‧‧開口部 26d‧‧‧側壁 26e‧‧‧上壁部 26f‧‧‧下壁部 27‧‧‧反射膜 28‧‧‧元件安裝部 29‧‧‧樹脂部 29C‧‧‧樹脂部 30‧‧‧發光元件 30B‧‧‧發光元件 40‧‧‧第3樹脂體 50‧‧‧導線 60‧‧‧絕緣膜 71‧‧‧有機溶劑 80‧‧‧電解槽 81‧‧‧電解液 82‧‧‧電源 83‧‧‧陰極板 84‧‧‧陽極板 85‧‧‧開關 90‧‧‧切割刀片 110‧‧‧配線 120‧‧‧配線 130‧‧‧第1陶瓷體 140‧‧‧第2陶瓷體 220‧‧‧殼體 221‧‧‧懸架引線 222‧‧‧懸桿引線 223‧‧‧貫通孔 T‧‧‧反射膜之平均厚度 W‧‧‧寬度1‧‧‧Light-emitting device 1B‧‧‧Lighting device 1C‧‧‧Light-emitting device 1D‧‧‧Light-emitting device 20‧‧‧Package 20B‧‧‧Package body 20C‧‧‧Package 20D‧‧‧ceramic package body 20a‧‧‧Bottom 20b‧‧‧ side 20c‧‧‧Upper surface 21‧‧‧Resin molded body 21C‧‧‧Resin molded body 21b‧‧‧Resin molded body 21c‧‧‧Resin molded body 21d‧‧‧Resin molded body 21e‧‧‧Resin molded body 22‧‧‧Lead frame 22a‧‧‧Through hole 22C‧‧‧Lead frame 23‧‧‧Lead 24‧‧‧The first resin body (resin part) 25‧‧‧Second resin body (resin part) 25a‧‧‧Upper surface 25b‧‧‧Lower surface 26‧‧‧Concave 26a‧‧‧Bottom 26b‧‧‧Inner surface 26c‧‧‧Opening 26d‧‧‧Wall 26e‧‧‧Upper wall 26f‧‧‧Lower wall 27‧‧‧Reflective film 28‧‧‧Component Mounting Department 29‧‧‧Resin Department 29C‧‧‧Resin Department 30‧‧‧Light-emitting element 30B‧‧‧Light-emitting element 40‧‧‧The third resin body 50‧‧‧Wire 60‧‧‧Insulation film 71‧‧‧Organic solvent 80‧‧‧Electrolyzer 81‧‧‧Electrolyte 82‧‧‧Power 83‧‧‧Cathode plate 84‧‧‧Anode plate 85‧‧‧Switch 90‧‧‧Cutting blade 110‧‧‧Wiring 120‧‧‧Wiring 130‧‧‧The first ceramic body 140‧‧‧Second ceramic body 220‧‧‧Shell 221‧‧‧Suspended Lead 222‧‧‧Suspended lead 223‧‧‧Through hole T‧‧‧Average thickness of reflective film W‧‧‧Width

圖1係表示第1實施形態之發光裝置之概略之圖，且係表示發光裝置之立體圖。 圖2係表示第1實施形態之發光裝置之概略之圖，且係發光裝置之俯視圖。 圖3係表示第1實施形態之發光裝置之概略之圖，且係圖2之III-III剖面箭視圖。 圖4係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係引線框架之俯視圖。 圖5係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係樹脂成形體之俯視圖。 圖6係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係圖5之VI-VI剖面箭視圖。 圖7係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係表示反射膜之形成方法之一例之圖。 圖8係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係具備反射膜之樹脂成形體之俯視圖。 圖9係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係圖8之IX-IX剖面箭視圖。 圖10係表示第1實施形態之發光裝置之製造步驟之概略的圖，其係表示將反射膜剝離之方法之一例的圖。 圖11係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係剝離反射膜後之樹脂成形體之俯視圖。 圖12係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係圖11之XII-XII剖面箭視圖。 圖13係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係載置有發光元件之樹脂成形體之剖視圖。 圖14係表示第1實施形態之發光裝置之製造步驟之概略的圖，且係發光元件由第3樹脂體覆蓋之樹脂成形體之剖視圖。 圖15係表示第2實施形態之發光裝置之製造步驟之概略的圖，且係發光元件由絕緣膜覆蓋之樹脂成形體之剖視圖。 圖16係表示第3實施形態之發光裝置之製造步驟之概略的圖，且係另一樹脂成形體之俯視圖。 圖17係表示第4實施形態之發光裝置之概略之圖，且係表示發光裝置之立體圖。 圖18係表示第4實施形態之發光裝置之概略之圖，且係表示發光裝置之前視圖。 圖19係表示第4實施形態之發光裝置之概略之圖，且係圖18之XIX-XIX剖面箭視圖。 圖20係表示第5實施形態之發光裝置之概略之圖，且係發光裝置之俯視圖。 圖21係表示第5實施形態之發光裝置之概略之圖，且係圖20之XXI-XXI剖面箭視圖。 圖22係表示第6實施形態之發光裝置之概略之剖視圖。FIG. 1 is a diagram showing the outline of the light-emitting device of the first embodiment, and is a perspective view showing the light-emitting device. FIG. 2 is a diagram showing the outline of the light-emitting device of the first embodiment, and is a plan view of the light-emitting device. Fig. 3 is a schematic diagram showing the light emitting device of the first embodiment, and is a cross-sectional arrow view of Fig. 2 along line III-III. 4 is a diagram showing the outline of the manufacturing steps of the light emitting device of the first embodiment, and is a plan view of the lead frame. 5 is a diagram showing the outline of the manufacturing steps of the light emitting device of the first embodiment, and is a plan view of the resin molded body. 6 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a VI-VI cross-sectional arrow view of FIG. 5. FIG. 7 is a diagram showing the outline of the manufacturing process of the light-emitting device of the first embodiment, and is a diagram showing an example of a method of forming a reflective film. 8 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a plan view of a resin molded body provided with a reflective film. 9 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a cross-sectional arrow view of IX-IX in FIG. 8. 10 is a diagram showing the outline of the manufacturing process of the light-emitting device of the first embodiment, and it is a diagram showing an example of a method of peeling off the reflective film. 11 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a plan view of the resin molded body after peeling off the reflective film. FIG. 12 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a cross-sectional arrow view of XII-XII in FIG. 11. 13 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a cross-sectional view of the resin molded body on which the light-emitting element is mounted. 14 is a diagram showing an outline of the manufacturing steps of the light-emitting device of the first embodiment, and is a cross-sectional view of a resin molded body in which a light-emitting element is covered with a third resin body. 15 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the second embodiment, and is a cross-sectional view of a resin molded body in which the light-emitting element is covered with an insulating film. 16 is a diagram showing the outline of the manufacturing steps of the light-emitting device of the third embodiment, and is a plan view of another resin molded body. FIG. 17 is a diagram showing the outline of the light-emitting device of the fourth embodiment, and is a perspective view showing the light-emitting device. FIG. 18 is a diagram showing the outline of the light-emitting device of the fourth embodiment, and is a front view of the light-emitting device. FIG. 19 is a diagram showing the outline of the light-emitting device of the fourth embodiment, and is a cross-sectional arrow view of XIX-XIX in FIG. 18. FIG. 20 is a diagram showing the outline of the light-emitting device of the fifth embodiment, and is a plan view of the light-emitting device. FIG. 21 is a diagram showing the outline of the light-emitting device of the fifth embodiment, and is a cross-sectional arrow view of XXI-XXI in FIG. 20. Fig. 22 is a schematic cross-sectional view showing the light emitting device of the sixth embodiment.

1‧‧‧發光裝置 1‧‧‧Light-emitting device

20‧‧‧封裝體 20‧‧‧Package

20a‧‧‧底面 20a‧‧‧Bottom

20b‧‧‧側面 20b‧‧‧ side

20c‧‧‧上表面 20c‧‧‧Upper surface

23‧‧‧引線 23‧‧‧Lead

24‧‧‧第1樹脂體(樹脂部) 24‧‧‧The first resin body (resin part)

25‧‧‧第2樹脂體(樹脂部) 25‧‧‧Second resin body (resin part)

25a‧‧‧上表面 25a‧‧‧Upper surface

25b‧‧‧下表面 25b‧‧‧Lower surface

26‧‧‧凹部 26‧‧‧Concave

26a‧‧‧底面 26a‧‧‧Bottom

26b‧‧‧內表面 26b‧‧‧Inner surface

26c‧‧‧開口部 26c‧‧‧Opening

26d‧‧‧側壁 26d‧‧‧Wall

27‧‧‧反射膜 27‧‧‧Reflective film

30‧‧‧發光元件 30‧‧‧Light-emitting element

40‧‧‧第3樹脂體 40‧‧‧The third resin body

50‧‧‧導線 50‧‧‧Wire

T‧‧‧反射膜之平均厚度 T‧‧‧Average thickness of reflective film

Claims (24)

一種封裝體，其具有：一對引線，其等配置於凹部之底面；第1樹脂體，其形成上述凹部之側壁；第2樹脂體，其配置於上述一對引線間；及反射膜，其覆蓋上述凹部之側壁之內表面與上述第2樹脂體之上表面及下表面。 A package has: a pair of leads arranged on the bottom surface of a recess; a first resin body forming the side wall of the recess; a second resin body arranged between the pair of leads; and a reflective film, which Cover the inner surface of the side wall of the recess and the upper and lower surfaces of the second resin body. 如請求項1之封裝體，其中上述第1樹脂體係上述凹部之開口部之周邊之整面由上述反射膜覆蓋。 The package of claim 1, wherein the entire surface of the periphery of the opening of the concave portion of the first resin system is covered by the reflective film. 如請求項1之封裝體，其中上述第1樹脂體及上述第2樹脂體係整面由上述反射膜覆蓋。 The package of claim 1, wherein the entire surface of the first resin body and the second resin system are covered by the reflective film. 如請求項1之封裝體，其中上述反射膜於上述凹部之側壁之內表面形成至與上述引線之交界為止，且於上述第2樹脂體之上表面及下表面形成至與上述引線之交界為止。 The package of claim 1, wherein the reflective film is formed on the inner surface of the side wall of the recessed portion to the boundary with the lead, and is formed on the upper and lower surfaces of the second resin body to the boundary with the lead . 如請求項1之封裝體，其中上述反射膜之平均厚度為10~1000nm。 Such as the package of claim 1, wherein the average thickness of the above-mentioned reflective film is 10~1000nm. 如請求項1之封裝體，其中上述反射膜主要包含具有1~100nm之粒徑之金屬氧化物。 The package according to claim 1, wherein the reflective film mainly contains a metal oxide having a particle size of 1-100 nm. 如請求項6之封裝體，其中上述金屬氧化物為氧化鈦。 The package according to claim 6, wherein the metal oxide is titanium oxide. 如請求項1之封裝體，其中上述第1樹脂體及上述第2樹脂體包含選自由環氧樹脂、改性環氧樹脂、聚矽氧樹脂、改性聚矽氧樹脂、丙烯酸酯樹脂、胺基甲酸酯樹脂所組成之群中之至少1種。 The package of claim 1, wherein the first resin body and the second resin body are selected from epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, acrylic resin, amine At least one of the group consisting of carbamate resin. 如請求項1之封裝體，其進而具備安裝發光元件之元件安裝部。 Such as the package of claim 1, which further includes a component mounting part for mounting a light-emitting component. 一種陶瓷封裝體，其具有：一對配線，其等配置於凹部之底面；第1陶瓷體，其形成上述凹部之側壁；第2陶瓷體，其配置於上述一對配線間；及反射膜，其覆蓋上述凹部之側壁之內表面與上述第2陶瓷體之上表面及下表面。 A ceramic package body having: a pair of wires arranged on the bottom surface of a recess; a first ceramic body forming the side wall of the recess; a second ceramic body arranged between the pair of wires; and a reflective film, It covers the inner surface of the side wall of the recess and the upper and lower surfaces of the second ceramic body. 一種發光裝置，其具有：如請求項1之封裝體；及發光元件，其於上述封裝體之上述凹部之底面配置於上述一對引線之至少一者。 A light-emitting device comprising: a package body as in claim 1; and a light-emitting element arranged on at least one of the pair of leads on the bottom surface of the concave portion of the package body. 一種發光裝置，其具有：如請求項9之封裝體；及 發光元件，其於上述封裝體之上述凹部之底面載置於上述元件安裝部，且分別與上述一對引線電性連接。 A light-emitting device, which has: a package body as claimed in claim 9; and The light-emitting element is mounted on the element mounting part on the bottom surface of the concave part of the package body, and is electrically connected to the pair of leads, respectively. 一種發光裝置，其具有：如請求項10之陶瓷封裝體；及發光元件，其於上述陶瓷封裝體之上述凹部之底面配置於上述一對配線之至少一者。 A light-emitting device comprising: a ceramic package body according to claim 10; and a light-emitting element arranged on at least one of the pair of wirings on the bottom surface of the concave portion of the ceramic package body. 如請求項11之發光裝置，其具備第3樹脂體，該第3樹脂體覆蓋上述發光元件且配置於上述凹部內。 The light-emitting device according to claim 11 includes a third resin body that covers the light-emitting element and is arranged in the recess. 一種封裝體之製造方法，其具有如下步驟：準備樹脂成形體，該樹脂成形體具備配置於凹部之底面之一對引線、形成上述凹部之側壁之第1樹脂體、及配置於上述一對引線間之第2樹脂體；至少於上述凹部之底面及上述凹部之側壁之內表面之整面形成反射膜；及於形成有上述反射膜之樹脂成形體中將形成於上述凹部內之上述一對引線之上述反射膜剝離，將上述反射膜剝離之步驟係將形成有上述反射膜之樹脂成形體浸漬於電解液中並於上述樹脂成形體流通電流。 A method of manufacturing a package, comprising the steps of preparing a resin molded body having a pair of leads arranged on the bottom surface of a recess, a first resin body forming the sidewall of the recess, and a pair of leads arranged on the pair of leads The second resin body between the middle; the reflective film is formed on at least the entire surface of the bottom surface of the recess and the inner surface of the side wall of the recess; and the pair of the above-mentioned pair formed in the recess in the resin molded body formed with the reflective film The step of peeling off the reflective film of the lead and peeling off the reflective film is to immerse the resin molded body on which the reflective film is formed in an electrolytic solution and flow current through the resin molded body. 如請求項15之封裝體之製造方法，其中上述電流為直流電流。 The method for manufacturing a package according to claim 15, wherein the above-mentioned current is a direct current. 如請求項16之封裝體之製造方法，其中將上述反射膜剝離之步驟具有如下步驟：以500A/m2~3000A/m2之電流密度對形成有上述反射膜之樹脂成形體進行通電；及將懸浮於該樹脂成形體之一對引線上之反射膜去除。 The method of manufacturing a package according to claim 16, wherein the step of peeling off the reflective film has the following steps: energize the resin molded body formed with the reflective film at a current density of 500A/m 2 to 3000A/m 2 ; and The reflective film suspended on one pair of leads of the resin molded body is removed. 如請求項15之封裝體之製造方法，其中形成上述反射膜之步驟係將上述所準備之樹脂成形體浸漬於主要包含具有1~100nm之粒徑之金屬氧化物之有機溶劑中。 The method for manufacturing a package according to claim 15, wherein the step of forming the reflective film is to immerse the prepared resin molded body in an organic solvent mainly containing a metal oxide having a particle size of 1-100 nm. 如請求項15之封裝體之製造方法，其中形成上述反射膜之步驟係於上述所準備之樹脂成形體上形成平均厚度為10~1000nm之反射膜。 The method for manufacturing a package according to claim 15, wherein the step of forming the reflective film is to form a reflective film with an average thickness of 10 to 1000 nm on the resin molded body prepared above. 一種發光裝置之製造方法，其具備如下步驟：準備樹脂成形體，該樹脂成形體具備配置於凹部之底面之一對引線、形成上述凹部之側壁之第1樹脂體、及配置於上述一對引線間之第2樹脂體；至少於上述凹部之底面及上述凹部之側壁之內表面之整面形成反射膜；於形成有上述反射膜之樹脂成形體中將形成於上述凹部內之上述一對引線之上述反射膜剝離；及將發光元件載置於剝離上述反射膜後之上述一對引線之至少一者，將上述反射膜剝離之步驟係將形成有上述反射膜之樹脂成形體浸漬於電解液中並於上述樹脂成形體流通電流。 A method of manufacturing a light emitting device, comprising the steps of preparing a resin molded body including a pair of leads arranged on the bottom surface of a recess, a first resin body forming the sidewall of the recess, and a pair of leads arranged on the pair of leads A second resin body between the middle; a reflective film is formed on at least the entire surface of the bottom surface of the recess and the inner surface of the side wall of the recess; the pair of leads formed in the recess is formed in the resin molded body with the reflective film Peeling off the reflective film; and placing the light emitting element on at least one of the pair of leads after peeling off the reflective film, and the step of peeling off the reflective film is to immerse the resin molded body on which the reflective film is formed in an electrolyte In addition, current flows through the above-mentioned resin molded body. 如請求項20之發光裝置之製造方法，其於載置上述發光元件之步驟後具備利用第3樹脂覆蓋上述發光元件之步驟。 According to claim 20, the method of manufacturing a light-emitting device includes a step of covering the light-emitting element with a third resin after the step of placing the light-emitting element. 如請求項20之發光裝置之製造方法，其於載置上述發光元件之步驟後具備利用絕緣膜覆蓋上述發光元件，進而利用第3樹脂覆蓋上述絕緣膜之步驟。 According to claim 20, the method of manufacturing a light emitting device includes a step of covering the light emitting element with an insulating film and then covering the insulating film with a third resin after the step of mounting the light emitting element. 如請求項22之發光裝置之製造方法，其中上述絕緣膜之膜厚薄於包含上述第3樹脂之第3樹脂體之膜厚。 The method of manufacturing a light-emitting device according to claim 22, wherein the film thickness of the insulating film is thinner than the film thickness of the third resin body containing the third resin. 如請求項22之發光裝置之製造方法，其中上述絕緣膜之膜厚大致固定。The method for manufacturing a light emitting device of claim 22, wherein the film thickness of the insulating film is substantially constant.
TW105131226A 2015-09-30 2016-09-29 Package, light-emitting device, and methods of manufacturing the package and light-emitting device TWI699010B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015192683 2015-09-30
JP??2015-192683 2015-09-30
JP??2016-112963 2016-06-06
JP2016112963A JP6237826B2 (en) 2015-09-30 2016-06-06 Package, light emitting device, and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TW201724580A TW201724580A (en) 2017-07-01
TWI699010B true TWI699010B (en) 2020-07-11

Family

ID=58495185

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105131226A TWI699010B (en) 2015-09-30 2016-09-29 Package, light-emitting device, and methods of manufacturing the package and light-emitting device

Country Status (3)

Country Link
JP (1) JP6237826B2 (en)
CN (2) CN112242478A (en)
TW (1) TWI699010B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7053249B2 (en) * 2017-12-22 2022-04-12 スタンレー電気株式会社 Semiconductor light emitting device
JP2019145739A (en) * 2018-02-23 2019-08-29 株式会社朝日ラバー Led light-emitting device with optical diffusion film, ink for forming optical diffusion film and light diffusion sheet for led light-emitting device
US10873015B2 (en) 2018-03-01 2020-12-22 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
JP6760324B2 (en) 2018-03-27 2020-09-23 日亜化学工業株式会社 Light emitting device
JP7512012B2 (en) * 2018-12-05 2024-07-08 株式会社ダイセル Optical semiconductor device
JP6974741B2 (en) * 2018-12-26 2021-12-01 日亜化学工業株式会社 Resin package and light emitting device
JP2020167366A (en) 2019-02-26 2020-10-08 ローム株式会社 Semiconductor light emitting device and manufacturing method of semiconductor light emitting device
CN111834510A (en) * 2019-04-17 2020-10-27 深圳市明格科技有限公司 LED package bracket
CN110867734A (en) * 2019-11-18 2020-03-06 南京鑫宜科技有限公司 Intelligent micro-grid system remote control device based on bifurcation theory
JP7495610B2 (en) 2020-07-06 2024-06-05 日亜化学工業株式会社 Light emitting device and method for manufacturing the same
JP2023082632A (en) * 2021-12-02 2023-06-14 スタンレー電気株式会社 semiconductor light emitting device
DE102023136869A1 (en) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh MANUFACTURE OF A RADIATION-EMITTING COMPONENT

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201214789A (en) * 2010-02-09 2012-04-01 Nichia Corp Light emitting device and manufacturing method of the light emitting device
US20130341666A1 (en) * 2011-03-31 2013-12-26 Panasonic Corporation Semiconductor light emitting device
US20140087498A1 (en) * 2012-09-25 2014-03-27 Toyoda Gosei Co., Ltd. Method of manufacturing light-emitting device
JP2014158011A (en) * 2013-01-16 2014-08-28 Konica Minolta Inc Method for manufacturing led device
US20150023026A1 (en) * 2013-07-17 2015-01-22 Nichia Corporation Light emitting device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4206899B2 (en) * 2003-10-27 2009-01-14 Ｊｓｒ株式会社 Surface mount type LED element
CN101006031B (en) * 2004-08-18 2012-06-20 株式会社德山 Ceramic substrate for mounting light-emitting device and method for producing same
JP6346724B2 (en) * 2004-11-30 2018-06-20 日亜化学工業株式会社 Surface mount type light emitting device and manufacturing method thereof
JP2007214471A (en) * 2006-02-13 2007-08-23 Matsushita Electric Ind Co Ltd Light emitting module and manufacturing method thereof
KR20140146210A (en) * 2006-06-02 2014-12-24 히타치가세이가부시끼가이샤 Optical semiconductor element mounting package, and optical semiconductor device using the same
KR101267718B1 (en) * 2008-12-19 2013-05-24 후루카와 덴키 고교 가부시키가이샤 Optical semiconductor device lead frame and manufacturing method thereof
JP5223116B2 (en) * 2009-03-25 2013-06-26 豊田合成株式会社 Light emitting device and manufacturing method thereof
CN102804426B (en) * 2009-06-22 2016-12-07 日亚化学工业株式会社 light emitting device
WO2010150824A1 (en) * 2009-06-24 2010-12-29 古河電気工業株式会社 Lead frame for optical semiconductor device, process for manufacturing lead frame for optical semiconductor device, and optical semiconductor device
EP2448026A4 (en) * 2009-06-26 2013-08-14 Asahi Rubber Inc REFLECTIVE MATERIAL OF WHITE COLOR AND PRODUCTION PROCESS
DE102009058796A1 (en) * 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelectronic component and method for producing an optoelectronic component
KR20130038847A (en) * 2010-03-23 2013-04-18 가부시키가이샤 아사히 러버 Silicone resin reflective substrate, manufacturing method for same, and base material composition used in reflective substrate
WO2011158811A1 (en) * 2010-06-15 2011-12-22 古河電気工業株式会社 Leadframe for optical semiconductor device, method for manufacturing leadframe for optical semiconductor device, and optical semiconductor device
CN102479909B (en) * 2010-11-24 2014-12-10 展晶科技(深圳)有限公司 Light emitting diode
JP5760655B2 (en) * 2011-04-28 2015-08-12 三菱化学株式会社 RESIN PACKAGE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING THE RESIN PACKAGE AND METHOD FOR MANUFACTURING THE SAME
JP5813467B2 (en) * 2011-11-07 2015-11-17 新光電気工業株式会社 Substrate, light emitting device, and method of manufacturing substrate
US8333860B1 (en) * 2011-11-18 2012-12-18 LuxVue Technology Corporation Method of transferring a micro device
TW201432949A (en) * 2013-02-05 2014-08-16 隆達電子股份有限公司 Light emitting module and manufacturing method thereof
JP2014241341A (en) * 2013-06-11 2014-12-25 株式会社東芝 Semiconductor light-emitting device
JP6323217B2 (en) * 2013-07-10 2018-05-16 日亜化学工業株式会社 Light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201214789A (en) * 2010-02-09 2012-04-01 Nichia Corp Light emitting device and manufacturing method of the light emitting device
US20130341666A1 (en) * 2011-03-31 2013-12-26 Panasonic Corporation Semiconductor light emitting device
US20140087498A1 (en) * 2012-09-25 2014-03-27 Toyoda Gosei Co., Ltd. Method of manufacturing light-emitting device
JP2014158011A (en) * 2013-01-16 2014-08-28 Konica Minolta Inc Method for manufacturing led device
US20150023026A1 (en) * 2013-07-17 2015-01-22 Nichia Corporation Light emitting device

Also Published As

Publication number Publication date
JP6237826B2 (en) 2017-11-29
CN106887511B (en) 2021-03-19
CN106887511A (en) 2017-06-23
JP2017069539A (en) 2017-04-06
CN112242478A (en) 2021-01-19
TW201724580A (en) 2017-07-01

Similar Documents

Publication Publication Date Title
TWI699010B (en) Package, light-emitting device, and methods of manufacturing the package and light-emitting device
US10367121B2 (en) Package and light-emitting device
TWI463708B (en) Side light-emitting type light-emitting element package structure and manufacturing method thereof
CN104282674B (en) Light-emitting device
EP2779257B1 (en) Light emitting device mount, light emitting apparatus including the same, and leadframe
CN106848045B (en) Light emitting device and liquid crystal display
JP5742353B2 (en) Light emitting element substrate and light emitting device
US9502619B2 (en) Side-view light emitting device including base body having protruding component
US20110241043A1 (en) Substrate for light-emitting element and light-emitting device employing it
CN103915542A (en) Light emitting device package, light emitting device using that package, and illumination device using the light emitting devices
CN102479910A (en) Led module
JP6387824B2 (en) Package, light emitting device and manufacturing method thereof
CN101826516B (en) Side light-emitting type light-emitting assembly encapsulating structure and manufacturing method thereof
CN107731799A (en) Light source module, the method and back light unit for manufacturing light source module
JP6524624B2 (en) Light emitting device
US20150091025A1 (en) Light-emitting device and method of manufacturing the same
JP2014192310A (en) Lead frame for led element and lead frame substrate for led element
JP5338543B2 (en) Optical semiconductor device and manufacturing method thereof
JP6551210B2 (en) Light emitting device
JP6566092B2 (en) Package, light emitting device and manufacturing method thereof
US20140217459A1 (en) Substrate for light emitting element and light emitting device
JP6402890B2 (en) Light emitting device and manufacturing method thereof
JP2019087549A (en) LED package and method of manufacturing the same
CN107425104A (en) Light-emitting component mounting is with the manufacture method and light-emitting component mounting matrix of matrix
JP2016119464A (en) Light emitting device