TWI690039B - Electronic package and manufacturing method thereof - Google Patents
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- TWI690039B TWI690039B TW108123412A TW108123412A TWI690039B TW I690039 B TWI690039 B TW I690039B TW 108123412 A TW108123412 A TW 108123412A TW 108123412 A TW108123412 A TW 108123412A TW I690039 B TWI690039 B TW I690039B
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- H10W74/111—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
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Abstract
Description
本發明係有關一種半導體封裝製程,尤指一種電子封裝件及其製法。 The invention relates to a semiconductor packaging process, in particular to an electronic package and its manufacturing method.
目前應用於晶片封裝領域之技術繁多,例如晶片尺寸構裝(Chip Scale Package,簡稱CSP)、晶片直接貼附封裝(Direct Chip Attached,簡稱DCA)或多晶片模組封裝(Multi-Chip Module,簡稱MCM)等覆晶型封裝製程、或將晶片立體堆疊化整合為三維積體電路(3D IC)晶片堆疊製程。 There are many technologies currently used in the field of chip packaging, such as Chip Scale Package (CSP), Direct Chip Attached (DCA) or Multi-Chip Module (Multi-Chip Module, abbreviation) MCM) and other flip-chip packaging processes, or integrate the three-dimensional stacking of chips into a three-dimensional integrated circuit (3D IC) chip stacking process.
如第1圖所示,習知四方平面無引腳(Quad Flat No leads,簡稱QFN)型式之半導體封裝件1,係將半導體晶片11藉由複數銲錫凸塊110以覆晶方式接置於一導線架10上,再以封裝膠體12包覆該半導體晶片11、導線架10及銲錫凸塊110,之後進行切割,以令該導線架10之各導腳100的側面(Side Surface)及底面(Bottom Surface)外露出該封裝膠體12,並使各該導腳100之底面與該封裝膠體12之底面齊平。
As shown in FIG. 1, the conventional quad flat no leads (QFN) type semiconductor package 1 is a
另一方面,為符合薄化需求,需先降低該半導體晶片11之厚度d,再將該半導體晶片11接置於該導線架10上。
On the other hand, in order to meet the requirement of thinning, the thickness d of the
惟,在多接點(I/O)數量且尺寸微小的封裝體積之需求下,尤其是該半導體封裝件1之整體厚度t小於0.3mm,該半導體晶片11所需之厚度d極小,故當該半導體晶片11接置於該導線架10上時,容易受壓而產生碎裂(crack)的狀況,造成該半導體封裝件1之信賴性不佳。
However, under the requirement of a multi-contact (I/O) quantity and a small package size, especially the overall thickness t of the semiconductor package 1 is less than 0.3 mm, the thickness d required by the
因此,如何克服上述習知技術的問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the above-mentioned problems of the conventional technology has become an urgent problem to be solved at present.
鑑於上述習知技術之缺失,本發明係提供一種電子封裝件,係包括:承載件,係具有複數導腳;電子元件,係結合於該承載件上且電性連接該複數導腳;以及封裝層,係形成於該承載件上且包覆該電子元件,其中,該封裝層係定義有相對之第一表面與第二表面,該電子元件之一表面係齊平該封裝層之第一表面,且該導腳係齊平該封裝層之第二表面。 In view of the lack of the above-mentioned conventional technology, the present invention provides an electronic package including: a carrier having a plurality of leads; an electronic component coupled to the carrier and electrically connecting the plurality of leads; and a package A layer is formed on the carrier and encapsulates the electronic component, wherein the encapsulation layer defines opposite first and second surfaces, and one surface of the electronic component is flush with the first surface of the encapsulation layer And the guide pin is flush with the second surface of the packaging layer.
本發明亦提供一種電子封裝件之製法,係包括:結合電子元件於一具有複數導腳之承載件上,且令該電子元件係電性連接該複數導腳;形成封裝層於該承載件上,使該封裝層包覆該電子元件;以及移除該封裝層之部分材質、該電子元件之部分材質及該承載件之部分材質,使該封裝層定義出相對之第一表面與第二表面,以令該電子元件之一表面齊平該封裝層之第一表面,且該導腳之一表面齊平該封裝層之第二表面。 The invention also provides a method for manufacturing an electronic package, which comprises: combining an electronic component on a carrier with a plurality of leads, and making the electronic component electrically connected to the plurality of leads; forming a packaging layer on the carrier To wrap the electronic component with the encapsulation layer; and remove part of the material of the encapsulation layer, part of the material of the electronic component and part of the material of the carrier, so that the encapsulation layer defines the opposite first surface and second surface , So that a surface of the electronic component is flush with the first surface of the packaging layer, and a surface of the guide pin is flush with the second surface of the packaging layer.
前述之製法中,係採用研磨方式移除該封裝層之部分材質、該電子元件之部分材質及該承載件之部分材質。 In the foregoing manufacturing method, some materials of the encapsulation layer, some materials of the electronic component and some materials of the carrier are removed by grinding.
前述之製法中,復包括進行切單作業。 In the aforesaid manufacturing method, the complex includes cutting orders.
前述之電子封裝件及其製法中,該承載件係為導線架。 In the aforementioned electronic package and its manufacturing method, the carrier is a lead frame.
前述之電子封裝件及其製法中,該電子元件係具有相對之作用面與非作用面,該電子元件以該作用面藉由複數導電凸塊設於該導腳上,且該非作用面齊平該封裝層之第一表面。 In the aforementioned electronic package and its manufacturing method, the electronic component has opposing active surfaces and non-active surfaces, the electronic component is provided on the guide pin with a plurality of conductive bumps on the active surface, and the non-active surface is flush The first surface of the encapsulation layer.
前述之電子封裝件及其製法中,該封裝層係定義有鄰接該第一表面與第二表面之側面,且令該導腳之部分表面外露出該封裝層之側面。 In the aforementioned electronic package and its manufacturing method, the encapsulation layer defines a side surface adjacent to the first surface and the second surface, and a part of the surface of the lead pin is exposed to the side surface of the encapsulation layer.
前述之電子封裝件及其製法中,該電子元件係外露於該封裝層之第一表面。 In the aforementioned electronic package and its manufacturing method, the electronic component is exposed on the first surface of the packaging layer.
前述之電子封裝件及其製法中,復包括配置於該封裝層之第二表面上的絕緣層,其具有複數外露該導腳之開孔。 In the aforementioned electronic package and its manufacturing method, the compound includes an insulating layer disposed on the second surface of the package layer, which has a plurality of openings exposing the lead pins.
前述之電子封裝件及其製法中,復包括配置於該電子元件與該封裝層之第一表面上的作用件。又包括配置於該封裝層之第二表面上的絕緣層,其具有複數外露該導腳之開孔,例如,該作用件之材質與該絕緣層之材質相同。或者,該作用件之材質係採用聚合物,以作為保護層。 In the aforementioned electronic package and its manufacturing method, it further includes an action member disposed on the first surface of the electronic component and the packaging layer. It also includes an insulating layer disposed on the second surface of the encapsulation layer, which has a plurality of openings exposing the lead pins. For example, the material of the acting member is the same as the material of the insulating layer. Alternatively, the material of the acting part is a polymer as a protective layer.
由上可知,本發明之電子封裝件及其製法中,主要藉由該電子元件上表面齊平該封裝層之第一表面,且該導腳下表面齊平該封裝層之第二表面,以縮小該承載件之厚度與該封裝層之厚度,故相較於習知技術,本發明之製法所得之電子封裝件之整體厚度能符合薄化需求,且能避免該電子元件產生碎裂的狀況。 It can be seen from the above that in the electronic package of the present invention and its manufacturing method, the first surface of the packaging layer is flush with the upper surface of the electronic component, and the second surface of the packaging layer is flush with the lower surface of the guide pin to reduce The thickness of the carrier and the thickness of the encapsulation layer, compared with the conventional technology, the overall thickness of the electronic package obtained by the manufacturing method of the present invention can meet the requirements of thinning, and can avoid the chipping of the electronic component.
1‧‧‧半導體封裝件 1‧‧‧Semiconductor package
10‧‧‧導線架 10‧‧‧ Lead frame
100,200‧‧‧導腳 100,200‧‧‧lead
11‧‧‧半導體晶片 11‧‧‧Semiconductor chip
110‧‧‧銲錫凸塊 110‧‧‧Solder bump
12‧‧‧封裝膠體 12‧‧‧Packing colloid
2‧‧‧電子封裝件 2‧‧‧Electronic package
20‧‧‧承載件 20‧‧‧Carrier
20a‧‧‧第一側 20a‧‧‧First side
20b‧‧‧第二側 20b‧‧‧Second side
21‧‧‧電子元件 21‧‧‧Electronic components
21a‧‧‧作用面 21a‧‧‧action surface
21b‧‧‧非作用面 21b‧‧‧non-acting surface
210‧‧‧電極墊 210‧‧‧electrode pad
211‧‧‧導電凸塊 211‧‧‧conductive bump
22‧‧‧封裝層 22‧‧‧Encapsulation layer
22a‧‧‧第一表面 22a‧‧‧First surface
22b‧‧‧第二表面 22b‧‧‧Second surface
22c‧‧‧側面 22c‧‧‧Side
23‧‧‧絕緣層 23‧‧‧Insulation
230‧‧‧開孔 230‧‧‧opening
24‧‧‧作用件 24‧‧‧Function piece
A‧‧‧置晶部 A‧‧‧Chip placement department
B‧‧‧外接部 B‧‧‧External Department
d,h,h1,h2,r,t‧‧‧厚度 d,h,h1,h2,r,t‧‧‧thickness
第1圖係為習知半導體封裝件之剖面示意圖。 FIG. 1 is a schematic cross-sectional view of a conventional semiconductor package.
第2A至2D圖係為本發明之電子封裝件之製法的剖面示意圖。 2A to 2D are schematic cross-sectional views of the manufacturing method of the electronic package of the present invention.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following describes the implementation of the present invention by specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“第一”、“第二”、“上”、“下”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings of this specification are only used to match the content disclosed in the specification, for those who are familiar with this skill to understand and read, not to limit the implementation of the present invention The limited conditions do not have technical significance. Any modification of structure, change of proportional relationship or adjustment of size should still fall within the scope of the invention without affecting the efficacy and the purpose of the invention. The technical content disclosed by the invention can be covered. At the same time, the terms such as "first", "second", "upper", "lower" and "one" cited in this specification are only for the convenience of description, not to limit the invention. The scope of implementation, changes or adjustments in their relative relationship, without substantial changes in the technical content, shall also be regarded as the scope of the invention.
第2A至2D圖係為本發明之電子封裝件2之製法的剖面示意圖。
2A to 2D are schematic cross-sectional views of the manufacturing method of the
如第2A圖所示,提供一具有相對之第一側20a與第二側20b的承載件20。
As shown in FIG. 2A, a
於本實施例中,該承載件20係為導線架,其包含複數相分離之導腳200,其中,該些導腳200係定義有相鄰接之置晶部A與外接部B,且該置晶部A較該外接部B靠近中間區域。
In this embodiment, the
如第2B圖所示,結合至少一電子元件21於該承載件20之第一側20a上。接著,形成一封裝層22於該承載件20之第一側20a上,以包覆該電子元件21,並外露出該承載件20之第二側20b。
As shown in FIG. 2B, at least one
該電子元件21係為主動元件、被動元件或其二者組合等,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。於本實施例中,該電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,且該作用面21a具有複數電極墊210,使該電子元件21藉由複數接合該些電極墊210之導電凸塊211(如銲錫材料或其它導電材),而採用覆晶方式設於該些導腳200之置晶部A上,以令該電子元件21電性連接該些導腳200。
The
再者,形成該封裝層22之材質係為聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(epoxy)或封裝材(molding compound)或其它適當絕緣材。
Furthermore, the material forming the
如第2C圖所示,移除該封裝層22之部分材質、該電子元件21之部分材質及該承載件20(第二側20b)之部分材質,以令該電子元件21之非作用面21b外露於該封裝層22,且該承載件20之第二側20b仍外露於該封裝層22。
As shown in FIG. 2C, part of the material of the
於本實施例中,藉由整平作業(如研磨方式)沿如第2B圖所示之上方與下方之預定移除區域L移除該封裝層22之部分材質、該電子元件21之非作用面21b之部分材質及該承載件20之第二側20b之部分材質,使該封裝層22定義出相對之第一表面22a與第二表面22b,以令該電子元件21之非作用面21b齊平該封裝層22之第一表面22a,且該些導腳200(或該承載件20之第二側20b)係齊平該封裝層22之第二表面22b。
In this embodiment, part of the material of the
如第2D圖所示,沿如第2C圖所示之切割路徑S進行切單作業,以製得電子封裝件2,其導腳200係外露於該封裝層22之側面22c。
As shown in FIG. 2D, the singulation operation is performed along the cutting path S shown in FIG. 2C to obtain the
於本實施例中,該電子封裝件2係為四方平面無引腳(QFN)型式,且該些導腳200之底面及側面係齊平該封裝層22之第二表面22b與側面22c,俾供後續於該些導腳200之外露表面上形成如銲球之銲錫材料(圖略),以接置於如電路板或另一線路板之電子裝置(圖略)。
In this embodiment, the
再者,可依需求於該承載件20之第二側20b與該封裝層22之第二表面22b上形成一絕緣層23,如防銲材,其形成有複數外露部分該導腳200之開孔230,以於外露出該些開孔230中之導腳200上形成如銲球之銲錫材料(圖略)。
Furthermore, an insulating
又,可依需求於該封裝層22之第一表面22a與該電子元件21之非作用面21b上配置一作用件24,如薄膜、散熱材或其它構造,以保護該電子元件21或提供該電子元件21之散熱。例如,該作用件24之材質可採用聚合物(Polymer),以作為保護層;或者,該作用件24之材質與該絕緣層23之材質可相同。
In addition, an
因此,本發明之製法係藉由整平作業,以移除該封裝層22之部分材質、該電子元件21之部分材質及該承載件20之第二側20b之部分材質,以縮小該承載件20之厚度h1與該封裝層22之厚度h2(如第2C圖所示),故相較於習知技術,本發明之製法所得之電子封裝件2之整體厚度h(如第2D圖所示)能符合薄化需求,例如整體厚度h僅為0.135mm。
Therefore, the manufacturing method of the present invention removes part of the material of the
再者,本發明之製法係先將該電子元件21設於該承載件20上,再以該封裝層22包覆該電子元件21,以於移除該封裝層22之部分材質及該電子元件21之非作用面21b之部分材質時,該封裝層22能分散應
力,故相較於習知技術,本發明之製法不僅能薄化該電子元件21之厚度r,且能避免該電子元件21破裂之問題。
Furthermore, the manufacturing method of the present invention is to first place the
本發明復提供一種電子封裝件2,其包括:一承載件20、一電子元件21以及一封裝層22。
The present invention further provides an
所述之承載件20係為導線架,其包含複數相分離之導腳200。
The
所述之電子元件21係結合於該承載件20上且電性連接該導腳200。
The
所述之封裝層22係形成於該承載件20上且包覆該電子元件21,其中,該封裝層22係定義有相對之第一表面22a與第二表面22b,且該電子元件21之上表面係齊平該封裝層22之第一表面22a,而該導腳200之下表面係齊平該封裝層22之第二表面22b,以令該電子元件21與該導腳200外露於該封裝層22。
The
於一實施例中,該電子元件21係具有相對之作用面21a與非作用面21b,且該作用面21a藉由複數導電凸塊211設於該導腳200上,而該非作用面21b齊平該封裝層22之第一表面22a。
In one embodiment, the
於一實施例中,該封裝層22係定義有鄰接該第一與第二表面22a,22b之側面22c,以令該導腳200外露於該封裝層22之側面22c。
In one embodiment, the
於一實施例中,該電子元件21係外露於該封裝層22之第一表面22a。
In one embodiment, the
於一實施例中,所述之電子封裝件2復包括配置於該封裝層22之第二表面22b上的絕緣層23,其具有複數外露該導腳200之開孔230。
In one embodiment, the
於一實施例中,所述之電子封裝件2復包括配置於該電子元件21與該封裝層22之第一表面22a上的作用件24。例如,該作用件24之材
質與該絕緣層23之材質相同。或者,該作用件24之材質係採用聚合物,以作為保護層。
In an embodiment, the
綜上所述,本發明之電子封裝件及其製法係藉由上、下方向研磨之整平過程,以縮小該電子封裝件之整體厚度,因而能符合薄化之需求,且能避免該電子元件破裂之問題。 In summary, the electronic package and its manufacturing method of the present invention use the upper and lower grinding processes to reduce the overall thickness of the electronic package, which can meet the needs of thinning and avoid the electronic The problem of broken components.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to exemplify the principles and effects of the present invention, rather than to limit the present invention. Anyone who is familiar with this skill can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be as listed in the scope of patent application mentioned later.
2‧‧‧電子封裝件 2‧‧‧Electronic package
20‧‧‧承載件 20‧‧‧Carrier
20b‧‧‧第二側 20b‧‧‧Second side
200‧‧‧導腳 200‧‧‧Guide feet
21‧‧‧電子元件 21‧‧‧Electronic components
21b‧‧‧非作用面 21b‧‧‧non-acting surface
22‧‧‧封裝層 22‧‧‧Encapsulation layer
22a‧‧‧第一表面 22a‧‧‧First surface
22b‧‧‧第二表面 22b‧‧‧Second surface
22c‧‧‧側面 22c‧‧‧Side
23‧‧‧絕緣層 23‧‧‧Insulation
230‧‧‧開孔 230‧‧‧opening
24‧‧‧作用件 24‧‧‧Function piece
h‧‧‧厚度 h‧‧‧thickness
Claims (17)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108123412A TWI690039B (en) | 2019-07-03 | 2019-07-03 | Electronic package and manufacturing method thereof |
| CN201910624358.4A CN112185903A (en) | 2019-07-03 | 2019-07-11 | Electronic package and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW108123412A TWI690039B (en) | 2019-07-03 | 2019-07-03 | Electronic package and manufacturing method thereof |
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| Publication Number | Publication Date |
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| TWI690039B true TWI690039B (en) | 2020-04-01 |
| TW202103271A TW202103271A (en) | 2021-01-16 |
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| CN113675101B (en) | 2021-10-20 | 2021-12-21 | 深圳新声半导体有限公司 | Method for chip packaging and chip particles |
| CN113675102A (en) * | 2021-10-22 | 2021-11-19 | 深圳新声半导体有限公司 | Method and chip particle for chip packaging |
| CN116190325A (en) * | 2023-02-13 | 2023-05-30 | 环旭(深圳)电子科创有限公司 | Electronic packaging module and manufacturing method thereof |
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|---|---|---|---|---|
| TW463342B (en) * | 2000-08-18 | 2001-11-11 | Siliconware Precision Industries Co Ltd | Flip-chip quad-flat nolead package |
| TW201340263A (en) * | 2012-03-21 | 2013-10-01 | 南茂科技股份有限公司 | Semiconductor package structure |
| TW201415589A (en) * | 2012-10-02 | 2014-04-16 | 矽品精密工業股份有限公司 | Semiconductor package and fabrication method thereof |
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| TWI316749B (en) * | 2006-11-17 | 2009-11-01 | Siliconware Precision Industries Co Ltd | Semiconductor package and fabrication method thereof |
| CN101335216A (en) * | 2007-06-27 | 2008-12-31 | 矽品精密工业股份有限公司 | Heat dissipation type package structure and manufacturing method thereof |
| CN102683230B (en) * | 2012-05-30 | 2015-06-17 | 天水华天科技股份有限公司 | Quad flat no-lead multi-circle-arranged integrated circuit (IC) chip packaging part and production method thereof |
| CN103094240A (en) * | 2012-12-15 | 2013-05-08 | 华天科技(西安)有限公司 | High-density etched lead frame FCAAQFN package part and manufacture process thereof |
| CN106328545A (en) * | 2015-07-02 | 2017-01-11 | 万国半导体(开曼)股份有限公司 | Ultrathin chip double-surface exposed package structure of and manufacturing method thereof |
| CN109478544B (en) * | 2015-07-10 | 2023-05-26 | 创研腾国际有限公司 | Universal surface mount semiconductor package |
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2019
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW463342B (en) * | 2000-08-18 | 2001-11-11 | Siliconware Precision Industries Co Ltd | Flip-chip quad-flat nolead package |
| TW201340263A (en) * | 2012-03-21 | 2013-10-01 | 南茂科技股份有限公司 | Semiconductor package structure |
| TW201415589A (en) * | 2012-10-02 | 2014-04-16 | 矽品精密工業股份有限公司 | Semiconductor package and fabrication method thereof |
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| CN112185903A (en) | 2021-01-05 |
| TW202103271A (en) | 2021-01-16 |
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