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TWI690039B - Electronic package and manufacturing method thereof - Google Patents

Electronic package and manufacturing method thereof Download PDF

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Publication number
TWI690039B
TWI690039B TW108123412A TW108123412A TWI690039B TW I690039 B TWI690039 B TW I690039B TW 108123412 A TW108123412 A TW 108123412A TW 108123412 A TW108123412 A TW 108123412A TW I690039 B TWI690039 B TW I690039B
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Taiwan
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electronic component
layer
item
patent application
manufacturing
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TW108123412A
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Chinese (zh)
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TW202103271A (en
Inventor
唐紹祖
馬伯豪
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矽品精密工業股份有限公司
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Priority to TW108123412A priority Critical patent/TWI690039B/en
Priority to CN201910624358.4A priority patent/CN112185903A/en
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Publication of TWI690039B publication Critical patent/TWI690039B/en
Publication of TW202103271A publication Critical patent/TW202103271A/en

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    • H10W74/111
    • H10W74/01
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • H10W90/726

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

This invention provides an electronic package and a manufacturing method thereof, in which an electronic component is disposed on a carrier by the manner of flip chip, and the electronic component is covered by an encapsulation layer. In addition, part of the material of the encapsulation layer, part of the material of the electronic component, and part of the material of the carrier are removed by the leveling operation to reduce the overall thickness of the electronic package.

Description

電子封裝件及其製法 Electronic package and its manufacturing method

本發明係有關一種半導體封裝製程,尤指一種電子封裝件及其製法。 The invention relates to a semiconductor packaging process, in particular to an electronic package and its manufacturing method.

目前應用於晶片封裝領域之技術繁多,例如晶片尺寸構裝(Chip Scale Package,簡稱CSP)、晶片直接貼附封裝(Direct Chip Attached,簡稱DCA)或多晶片模組封裝(Multi-Chip Module,簡稱MCM)等覆晶型封裝製程、或將晶片立體堆疊化整合為三維積體電路(3D IC)晶片堆疊製程。 There are many technologies currently used in the field of chip packaging, such as Chip Scale Package (CSP), Direct Chip Attached (DCA) or Multi-Chip Module (Multi-Chip Module, abbreviation) MCM) and other flip-chip packaging processes, or integrate the three-dimensional stacking of chips into a three-dimensional integrated circuit (3D IC) chip stacking process.

如第1圖所示,習知四方平面無引腳(Quad Flat No leads,簡稱QFN)型式之半導體封裝件1,係將半導體晶片11藉由複數銲錫凸塊110以覆晶方式接置於一導線架10上,再以封裝膠體12包覆該半導體晶片11、導線架10及銲錫凸塊110,之後進行切割,以令該導線架10之各導腳100的側面(Side Surface)及底面(Bottom Surface)外露出該封裝膠體12,並使各該導腳100之底面與該封裝膠體12之底面齊平。 As shown in FIG. 1, the conventional quad flat no leads (QFN) type semiconductor package 1 is a semiconductor chip 11 which is flip-chip mounted on a chip through a plurality of solder bumps 110 On the lead frame 10, the semiconductor chip 11, the lead frame 10 and the solder bump 110 are coated with the encapsulant 12 and then cut to make the side surface and bottom surface of each lead 100 of the lead frame 10 ( Bottom Surface) exposes the encapsulating gel 12, and the bottom surface of each of the guide pins 100 is flush with the bottom surface of the encapsulating gel 12.

另一方面,為符合薄化需求,需先降低該半導體晶片11之厚度d,再將該半導體晶片11接置於該導線架10上。 On the other hand, in order to meet the requirement of thinning, the thickness d of the semiconductor wafer 11 needs to be reduced first, and then the semiconductor wafer 11 is placed on the lead frame 10.

惟,在多接點(I/O)數量且尺寸微小的封裝體積之需求下,尤其是該半導體封裝件1之整體厚度t小於0.3mm,該半導體晶片11所需之厚度d極小,故當該半導體晶片11接置於該導線架10上時,容易受壓而產生碎裂(crack)的狀況,造成該半導體封裝件1之信賴性不佳。 However, under the requirement of a multi-contact (I/O) quantity and a small package size, especially the overall thickness t of the semiconductor package 1 is less than 0.3 mm, the thickness d required by the semiconductor chip 11 is extremely small, so When the semiconductor chip 11 is placed on the lead frame 10, it is easy to be pressed to cause a crack, which results in poor reliability of the semiconductor package 1.

因此,如何克服上述習知技術的問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the above-mentioned problems of the conventional technology has become an urgent problem to be solved at present.

鑑於上述習知技術之缺失,本發明係提供一種電子封裝件,係包括:承載件,係具有複數導腳;電子元件,係結合於該承載件上且電性連接該複數導腳;以及封裝層,係形成於該承載件上且包覆該電子元件,其中,該封裝層係定義有相對之第一表面與第二表面,該電子元件之一表面係齊平該封裝層之第一表面,且該導腳係齊平該封裝層之第二表面。 In view of the lack of the above-mentioned conventional technology, the present invention provides an electronic package including: a carrier having a plurality of leads; an electronic component coupled to the carrier and electrically connecting the plurality of leads; and a package A layer is formed on the carrier and encapsulates the electronic component, wherein the encapsulation layer defines opposite first and second surfaces, and one surface of the electronic component is flush with the first surface of the encapsulation layer And the guide pin is flush with the second surface of the packaging layer.

本發明亦提供一種電子封裝件之製法,係包括:結合電子元件於一具有複數導腳之承載件上,且令該電子元件係電性連接該複數導腳;形成封裝層於該承載件上,使該封裝層包覆該電子元件;以及移除該封裝層之部分材質、該電子元件之部分材質及該承載件之部分材質,使該封裝層定義出相對之第一表面與第二表面,以令該電子元件之一表面齊平該封裝層之第一表面,且該導腳之一表面齊平該封裝層之第二表面。 The invention also provides a method for manufacturing an electronic package, which comprises: combining an electronic component on a carrier with a plurality of leads, and making the electronic component electrically connected to the plurality of leads; forming a packaging layer on the carrier To wrap the electronic component with the encapsulation layer; and remove part of the material of the encapsulation layer, part of the material of the electronic component and part of the material of the carrier, so that the encapsulation layer defines the opposite first surface and second surface , So that a surface of the electronic component is flush with the first surface of the packaging layer, and a surface of the guide pin is flush with the second surface of the packaging layer.

前述之製法中,係採用研磨方式移除該封裝層之部分材質、該電子元件之部分材質及該承載件之部分材質。 In the foregoing manufacturing method, some materials of the encapsulation layer, some materials of the electronic component and some materials of the carrier are removed by grinding.

前述之製法中,復包括進行切單作業。 In the aforesaid manufacturing method, the complex includes cutting orders.

前述之電子封裝件及其製法中,該承載件係為導線架。 In the aforementioned electronic package and its manufacturing method, the carrier is a lead frame.

前述之電子封裝件及其製法中,該電子元件係具有相對之作用面與非作用面,該電子元件以該作用面藉由複數導電凸塊設於該導腳上,且該非作用面齊平該封裝層之第一表面。 In the aforementioned electronic package and its manufacturing method, the electronic component has opposing active surfaces and non-active surfaces, the electronic component is provided on the guide pin with a plurality of conductive bumps on the active surface, and the non-active surface is flush The first surface of the encapsulation layer.

前述之電子封裝件及其製法中,該封裝層係定義有鄰接該第一表面與第二表面之側面,且令該導腳之部分表面外露出該封裝層之側面。 In the aforementioned electronic package and its manufacturing method, the encapsulation layer defines a side surface adjacent to the first surface and the second surface, and a part of the surface of the lead pin is exposed to the side surface of the encapsulation layer.

前述之電子封裝件及其製法中,該電子元件係外露於該封裝層之第一表面。 In the aforementioned electronic package and its manufacturing method, the electronic component is exposed on the first surface of the packaging layer.

前述之電子封裝件及其製法中,復包括配置於該封裝層之第二表面上的絕緣層,其具有複數外露該導腳之開孔。 In the aforementioned electronic package and its manufacturing method, the compound includes an insulating layer disposed on the second surface of the package layer, which has a plurality of openings exposing the lead pins.

前述之電子封裝件及其製法中,復包括配置於該電子元件與該封裝層之第一表面上的作用件。又包括配置於該封裝層之第二表面上的絕緣層,其具有複數外露該導腳之開孔,例如,該作用件之材質與該絕緣層之材質相同。或者,該作用件之材質係採用聚合物,以作為保護層。 In the aforementioned electronic package and its manufacturing method, it further includes an action member disposed on the first surface of the electronic component and the packaging layer. It also includes an insulating layer disposed on the second surface of the encapsulation layer, which has a plurality of openings exposing the lead pins. For example, the material of the acting member is the same as the material of the insulating layer. Alternatively, the material of the acting part is a polymer as a protective layer.

由上可知,本發明之電子封裝件及其製法中,主要藉由該電子元件上表面齊平該封裝層之第一表面,且該導腳下表面齊平該封裝層之第二表面,以縮小該承載件之厚度與該封裝層之厚度,故相較於習知技術,本發明之製法所得之電子封裝件之整體厚度能符合薄化需求,且能避免該電子元件產生碎裂的狀況。 It can be seen from the above that in the electronic package of the present invention and its manufacturing method, the first surface of the packaging layer is flush with the upper surface of the electronic component, and the second surface of the packaging layer is flush with the lower surface of the guide pin to reduce The thickness of the carrier and the thickness of the encapsulation layer, compared with the conventional technology, the overall thickness of the electronic package obtained by the manufacturing method of the present invention can meet the requirements of thinning, and can avoid the chipping of the electronic component.

1‧‧‧半導體封裝件 1‧‧‧Semiconductor package

10‧‧‧導線架 10‧‧‧ Lead frame

100,200‧‧‧導腳 100,200‧‧‧lead

11‧‧‧半導體晶片 11‧‧‧Semiconductor chip

110‧‧‧銲錫凸塊 110‧‧‧Solder bump

12‧‧‧封裝膠體 12‧‧‧Packing colloid

2‧‧‧電子封裝件 2‧‧‧Electronic package

20‧‧‧承載件 20‧‧‧Carrier

20a‧‧‧第一側 20a‧‧‧First side

20b‧‧‧第二側 20b‧‧‧Second side

21‧‧‧電子元件 21‧‧‧Electronic components

21a‧‧‧作用面 21a‧‧‧action surface

21b‧‧‧非作用面 21b‧‧‧non-acting surface

210‧‧‧電極墊 210‧‧‧electrode pad

211‧‧‧導電凸塊 211‧‧‧conductive bump

22‧‧‧封裝層 22‧‧‧Encapsulation layer

22a‧‧‧第一表面 22a‧‧‧First surface

22b‧‧‧第二表面 22b‧‧‧Second surface

22c‧‧‧側面 22c‧‧‧Side

23‧‧‧絕緣層 23‧‧‧Insulation

230‧‧‧開孔 230‧‧‧opening

24‧‧‧作用件 24‧‧‧Function piece

A‧‧‧置晶部 A‧‧‧Chip placement department

B‧‧‧外接部 B‧‧‧External Department

d,h,h1,h2,r,t‧‧‧厚度 d,h,h1,h2,r,t‧‧‧thickness

第1圖係為習知半導體封裝件之剖面示意圖。 FIG. 1 is a schematic cross-sectional view of a conventional semiconductor package.

第2A至2D圖係為本發明之電子封裝件之製法的剖面示意圖。 2A to 2D are schematic cross-sectional views of the manufacturing method of the electronic package of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following describes the implementation of the present invention by specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“第一”、“第二”、“上”、“下”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings of this specification are only used to match the content disclosed in the specification, for those who are familiar with this skill to understand and read, not to limit the implementation of the present invention The limited conditions do not have technical significance. Any modification of structure, change of proportional relationship or adjustment of size should still fall within the scope of the invention without affecting the efficacy and the purpose of the invention. The technical content disclosed by the invention can be covered. At the same time, the terms such as "first", "second", "upper", "lower" and "one" cited in this specification are only for the convenience of description, not to limit the invention. The scope of implementation, changes or adjustments in their relative relationship, without substantial changes in the technical content, shall also be regarded as the scope of the invention.

第2A至2D圖係為本發明之電子封裝件2之製法的剖面示意圖。 2A to 2D are schematic cross-sectional views of the manufacturing method of the electronic package 2 of the present invention.

如第2A圖所示,提供一具有相對之第一側20a與第二側20b的承載件20。 As shown in FIG. 2A, a carrier 20 having a first side 20a and a second side 20b opposite to each other is provided.

於本實施例中,該承載件20係為導線架,其包含複數相分離之導腳200,其中,該些導腳200係定義有相鄰接之置晶部A與外接部B,且該置晶部A較該外接部B靠近中間區域。 In this embodiment, the carrier 20 is a lead frame, which includes a plurality of phase-separated guide pins 200, wherein the guide pins 200 define an adjacent crystal placement portion A and an external portion B, and the The crystal placement portion A is closer to the middle region than the circumscribed portion B.

如第2B圖所示,結合至少一電子元件21於該承載件20之第一側20a上。接著,形成一封裝層22於該承載件20之第一側20a上,以包覆該電子元件21,並外露出該承載件20之第二側20b。 As shown in FIG. 2B, at least one electronic component 21 is combined on the first side 20a of the carrier 20. Next, an encapsulation layer 22 is formed on the first side 20a of the carrier 20 to cover the electronic component 21 and expose the second side 20b of the carrier 20.

該電子元件21係為主動元件、被動元件或其二者組合等,其中,該主動元件係例如半導體晶片,且該被動元件係例如電阻、電容及電感。於本實施例中,該電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,且該作用面21a具有複數電極墊210,使該電子元件21藉由複數接合該些電極墊210之導電凸塊211(如銲錫材料或其它導電材),而採用覆晶方式設於該些導腳200之置晶部A上,以令該電子元件21電性連接該些導腳200。 The electronic component 21 is an active component, a passive component, or a combination of both. The active component is, for example, a semiconductor chip, and the passive component is, for example, a resistor, a capacitor, and an inductor. In this embodiment, the electronic component 21 is a semiconductor chip, which has an opposing active surface 21a and a non-active surface 21b, and the active surface 21a has a plurality of electrode pads 210, so that the electronic component 21 is joined by a plurality of these The conductive bumps 211 (such as solder material or other conductive materials) of the electrode pad 210 are mounted on the crystal placement portion A of the lead pins 200 by flip chip method, so that the electronic component 21 is electrically connected to the lead pins 200.

再者,形成該封裝層22之材質係為聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(epoxy)或封裝材(molding compound)或其它適當絕緣材。 Furthermore, the material forming the encapsulation layer 22 is polyimide (PI), dry film, dry film, epoxy, molding compound, or other suitable insulating materials.

如第2C圖所示,移除該封裝層22之部分材質、該電子元件21之部分材質及該承載件20(第二側20b)之部分材質,以令該電子元件21之非作用面21b外露於該封裝層22,且該承載件20之第二側20b仍外露於該封裝層22。 As shown in FIG. 2C, part of the material of the encapsulation layer 22, part of the material of the electronic component 21 and part of the material of the carrier 20 (second side 20b) are removed to make the non-active surface 21b of the electronic component 21 It is exposed to the encapsulation layer 22, and the second side 20b of the carrier 20 is still exposed to the encapsulation layer 22.

於本實施例中,藉由整平作業(如研磨方式)沿如第2B圖所示之上方與下方之預定移除區域L移除該封裝層22之部分材質、該電子元件21之非作用面21b之部分材質及該承載件20之第二側20b之部分材質,使該封裝層22定義出相對之第一表面22a與第二表面22b,以令該電子元件21之非作用面21b齊平該封裝層22之第一表面22a,且該些導腳200(或該承載件20之第二側20b)係齊平該封裝層22之第二表面22b。 In this embodiment, part of the material of the packaging layer 22 and the non-function of the electronic component 21 are removed along the predetermined removal areas L above and below as shown in FIG. 2B by leveling operations (such as grinding) The partial material of the surface 21b and the partial material of the second side 20b of the carrier 20 define the opposite first surface 22a and the second surface 22b of the encapsulation layer 22 so that the non-active surface 21b of the electronic component 21 is aligned The first surface 22a of the encapsulation layer 22 is leveled, and the guide pins 200 (or the second side 20b of the carrier 20) are flush with the second surface 22b of the encapsulation layer 22.

如第2D圖所示,沿如第2C圖所示之切割路徑S進行切單作業,以製得電子封裝件2,其導腳200係外露於該封裝層22之側面22c。 As shown in FIG. 2D, the singulation operation is performed along the cutting path S shown in FIG. 2C to obtain the electronic package 2 whose lead pins 200 are exposed on the side surface 22c of the packaging layer 22.

於本實施例中,該電子封裝件2係為四方平面無引腳(QFN)型式,且該些導腳200之底面及側面係齊平該封裝層22之第二表面22b與側面22c,俾供後續於該些導腳200之外露表面上形成如銲球之銲錫材料(圖略),以接置於如電路板或另一線路板之電子裝置(圖略)。 In this embodiment, the electronic package 2 is a quad flat no-lead (QFN) type, and the bottom surface and the side surfaces of the lead pins 200 are flush with the second surface 22b and the side surface 22c of the packaging layer 22, so that For subsequent formation of solder material (such as a solder ball) on the exposed surfaces of the guide pins 200 for connection to an electronic device such as a circuit board or another circuit board (not shown).

再者,可依需求於該承載件20之第二側20b與該封裝層22之第二表面22b上形成一絕緣層23,如防銲材,其形成有複數外露部分該導腳200之開孔230,以於外露出該些開孔230中之導腳200上形成如銲球之銲錫材料(圖略)。 Furthermore, an insulating layer 23, such as a solder mask, can be formed on the second side 20b of the carrier 20 and the second surface 22b of the encapsulation layer 22 as required, which forms a plurality of exposed portions of the guide pin 200 opening The hole 230 is used to form a solder material (such as a solder ball) on the lead pins 200 exposed in the openings 230 (figure omitted).

又,可依需求於該封裝層22之第一表面22a與該電子元件21之非作用面21b上配置一作用件24,如薄膜、散熱材或其它構造,以保護該電子元件21或提供該電子元件21之散熱。例如,該作用件24之材質可採用聚合物(Polymer),以作為保護層;或者,該作用件24之材質與該絕緣層23之材質可相同。 In addition, an action member 24 such as a film, a heat dissipation material, or other structures may be disposed on the first surface 22a of the encapsulation layer 22 and the non-acting surface 21b of the electronic element 21 to protect the electronic element 21 or provide the Heat dissipation of the electronic component 21. For example, the material of the acting member 24 may use a polymer as a protective layer; or, the material of the acting member 24 and the insulating layer 23 may be the same.

因此,本發明之製法係藉由整平作業,以移除該封裝層22之部分材質、該電子元件21之部分材質及該承載件20之第二側20b之部分材質,以縮小該承載件20之厚度h1與該封裝層22之厚度h2(如第2C圖所示),故相較於習知技術,本發明之製法所得之電子封裝件2之整體厚度h(如第2D圖所示)能符合薄化需求,例如整體厚度h僅為0.135mm。 Therefore, the manufacturing method of the present invention removes part of the material of the encapsulation layer 22, part of the material of the electronic component 21 and part of the material of the second side 20b of the carrier 20 by leveling to reduce the carrier The thickness h1 of 20 and the thickness h2 of the packaging layer 22 (as shown in FIG. 2C), so compared to the conventional technology, the overall thickness h of the electronic package 2 obtained by the manufacturing method of the present invention (as shown in FIG. 2D ) Can meet the requirements of thinning, for example, the overall thickness h is only 0.135mm.

再者,本發明之製法係先將該電子元件21設於該承載件20上,再以該封裝層22包覆該電子元件21,以於移除該封裝層22之部分材質及該電子元件21之非作用面21b之部分材質時,該封裝層22能分散應 力,故相較於習知技術,本發明之製法不僅能薄化該電子元件21之厚度r,且能避免該電子元件21破裂之問題。 Furthermore, the manufacturing method of the present invention is to first place the electronic component 21 on the carrier 20, and then wrap the electronic component 21 with the encapsulation layer 22, so as to remove part of the material of the encapsulation layer 22 and the electronic component 21 part of the non-acting surface 21b material, the encapsulation layer 22 can be dispersed Compared with the conventional technology, the manufacturing method of the present invention can not only reduce the thickness r of the electronic component 21, but also avoid the problem of cracking of the electronic component 21.

本發明復提供一種電子封裝件2,其包括:一承載件20、一電子元件21以及一封裝層22。 The present invention further provides an electronic package 2 including: a carrier 20, an electronic component 21 and a packaging layer 22.

所述之承載件20係為導線架,其包含複數相分離之導腳200。 The carrier 20 is a lead frame, which includes a plurality of guide pins 200 separated by phases.

所述之電子元件21係結合於該承載件20上且電性連接該導腳200。 The electronic component 21 is coupled to the carrier 20 and electrically connected to the lead 200.

所述之封裝層22係形成於該承載件20上且包覆該電子元件21,其中,該封裝層22係定義有相對之第一表面22a與第二表面22b,且該電子元件21之上表面係齊平該封裝層22之第一表面22a,而該導腳200之下表面係齊平該封裝層22之第二表面22b,以令該電子元件21與該導腳200外露於該封裝層22。 The encapsulation layer 22 is formed on the carrier 20 and covers the electronic component 21, wherein the encapsulation layer 22 defines a first surface 22 a and a second surface 22 b opposite to the electronic component 21 The surface is flush with the first surface 22a of the packaging layer 22, and the lower surface of the lead 200 is flush with the second surface 22b of the packaging layer 22, so that the electronic component 21 and the lead 200 are exposed to the package Layer 22.

於一實施例中,該電子元件21係具有相對之作用面21a與非作用面21b,且該作用面21a藉由複數導電凸塊211設於該導腳200上,而該非作用面21b齊平該封裝層22之第一表面22a。 In one embodiment, the electronic component 21 has opposing active surfaces 21a and non-active surfaces 21b, and the active surface 21a is provided on the guide pin 200 by a plurality of conductive bumps 211, and the non-active surface 21b is flush The first surface 22a of the encapsulation layer 22.

於一實施例中,該封裝層22係定義有鄰接該第一與第二表面22a,22b之側面22c,以令該導腳200外露於該封裝層22之側面22c。 In one embodiment, the encapsulation layer 22 defines a side surface 22c adjacent to the first and second surfaces 22a, 22b, so that the guide pin 200 is exposed to the side surface 22c of the encapsulation layer 22.

於一實施例中,該電子元件21係外露於該封裝層22之第一表面22a。 In one embodiment, the electronic component 21 is exposed on the first surface 22a of the encapsulation layer 22.

於一實施例中,所述之電子封裝件2復包括配置於該封裝層22之第二表面22b上的絕緣層23,其具有複數外露該導腳200之開孔230。 In one embodiment, the electronic package 2 includes an insulating layer 23 disposed on the second surface 22b of the packaging layer 22, and has a plurality of openings 230 exposing the lead 200.

於一實施例中,所述之電子封裝件2復包括配置於該電子元件21與該封裝層22之第一表面22a上的作用件24。例如,該作用件24之材 質與該絕緣層23之材質相同。或者,該作用件24之材質係採用聚合物,以作為保護層。 In an embodiment, the electronic package 2 includes an action member 24 disposed on the first surface 22a of the electronic component 21 and the packaging layer 22. For example, the material of the action member 24 The quality is the same as the material of the insulating layer 23. Alternatively, the material of the action member 24 is a polymer, which is used as a protective layer.

綜上所述,本發明之電子封裝件及其製法係藉由上、下方向研磨之整平過程,以縮小該電子封裝件之整體厚度,因而能符合薄化之需求,且能避免該電子元件破裂之問題。 In summary, the electronic package and its manufacturing method of the present invention use the upper and lower grinding processes to reduce the overall thickness of the electronic package, which can meet the needs of thinning and avoid the electronic The problem of broken components.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to exemplify the principles and effects of the present invention, rather than to limit the present invention. Anyone who is familiar with this skill can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be as listed in the scope of patent application mentioned later.

2‧‧‧電子封裝件 2‧‧‧Electronic package

20‧‧‧承載件 20‧‧‧Carrier

20b‧‧‧第二側 20b‧‧‧Second side

200‧‧‧導腳 200‧‧‧Guide feet

21‧‧‧電子元件 21‧‧‧Electronic components

21b‧‧‧非作用面 21b‧‧‧non-acting surface

22‧‧‧封裝層 22‧‧‧Encapsulation layer

22a‧‧‧第一表面 22a‧‧‧First surface

22b‧‧‧第二表面 22b‧‧‧Second surface

22c‧‧‧側面 22c‧‧‧Side

23‧‧‧絕緣層 23‧‧‧Insulation

230‧‧‧開孔 230‧‧‧opening

24‧‧‧作用件 24‧‧‧Function piece

h‧‧‧厚度 h‧‧‧thickness

Claims (17)

一種電子封裝件,係包括:承載件,係具有複數導腳;電子元件,係結合於該承載件上且電性連接該複數導腳;封裝層,係形成於該承載件上且包覆該電子元件,其中,該封裝層係定義有相對之第一表面與第二表面,該電子元件之一表面係齊平該封裝層之第一表面,且該導腳之一表面係齊平該封裝層之第二表面;以及作用件,配置於該電子元件與該封裝層之第一表面上,其中,該作用件之材質係採用聚合物,以作為保護層。 An electronic package includes: a carrier, which has a plurality of leads; an electronic component, which is coupled to the carrier and is electrically connected to the plurality of leads; an encapsulation layer is formed on the carrier and covers the An electronic component, wherein the packaging layer defines opposite first and second surfaces, one surface of the electronic component is flush with the first surface of the packaging layer, and one surface of the lead is flush with the package The second surface of the layer; and the active part are arranged on the first surface of the electronic component and the encapsulation layer, wherein the material of the active part is a polymer, which is used as a protective layer. 如申請專利範圍第1項所述之電子封裝件,其中,該承載件係為導線架。 The electronic package as described in item 1 of the patent application scope, wherein the carrier is a lead frame. 如申請專利範圍第1項所述之電子封裝件,其中,該電子元件係具有相對之作用面與非作用面,該電子元件以該作用面藉由複數導電凸塊設於該導腳上,且該非作用面齊平該封裝層之第一表面。 The electronic package as described in item 1 of the patent application range, wherein the electronic component has opposite active surfaces and non-active surfaces, and the electronic component is provided on the guide pin with a plurality of conductive bumps on the active surface, And the non-active surface is flush with the first surface of the encapsulation layer. 如申請專利範圍第1項所述之電子封裝件,其中,該封裝層係定義有鄰接該第一表面與第二表面之側面,且令該導腳之部分表面外露出該封裝層之側面。 The electronic package as described in item 1 of the patent application scope, wherein the encapsulation layer defines a side surface adjacent to the first surface and the second surface, and a part of the surface of the lead pin is exposed to the side surface of the encapsulation layer. 如申請專利範圍第1項所述之電子封裝件,復包括配置於該封裝層之第二表面上的絕緣層,其具有複數外露該導腳之開孔。 The electronic package described in item 1 of the patent application range includes an insulating layer disposed on the second surface of the packaging layer, which has a plurality of openings exposing the lead pins. 如申請專利範圍第5項所述之電子封裝件,其中,該作用件之材質與該絕緣層之材質相同。 The electronic package as described in item 5 of the patent application scope, wherein the material of the acting part is the same as the material of the insulating layer. 一種電子封裝件之製法,係包括: 結合電子元件於一具有複數導腳之承載件上,且令該電子元件係電性連接該複數導腳;形成封裝層於該承載件上,使該封裝層包覆該電子元件;以及移除該封裝層之部分材質、該電子元件之部分材質及該承載件之部分材質,使該封裝層定義出相對之第一表面與第二表面,以令該電子元件之一表面齊平該封裝層之第一表面,且該導腳之一表面齊平該封裝層之第二表面。 A manufacturing method of electronic package includes: Combining the electronic component on a carrier with a plurality of lead pins, and making the electronic component electrically connected to the plurality of lead pins; forming an encapsulation layer on the carrier, so that the encapsulation layer covers the electronic component; and removing Part of the material of the encapsulation layer, part of the material of the electronic component and part of the material of the carrier make the encapsulation layer define the first surface and the second surface so that one surface of the electronic component is flush with the encapsulation layer The first surface, and one surface of the guide pin is flush with the second surface of the packaging layer. 如申請專利範圍第7項所述之電子封裝件之製法,其中,該承載件係為導線架。 The method for manufacturing an electronic package as described in item 7 of the patent application scope, wherein the carrier is a lead frame. 如申請專利範圍第7項所述之電子封裝件之製法,其中,該電子元件係具有相對之作用面與非作用面,該電子元件以該作用面藉由複數導電凸塊設於該導腳上,且該非作用面齊平該封裝層之第一表面。 The method for manufacturing an electronic package as described in item 7 of the patent application scope, wherein the electronic component has opposite active surfaces and non-active surfaces, and the electronic component is provided on the guide pin with a plurality of conductive bumps on the active surface And the non-active surface is flush with the first surface of the encapsulation layer. 如申請專利範圍第7項所述之電子封裝件之製法,其中,該封裝層係定義有鄰接該第一表面與第二表面之側面,且令該導腳之部分表面外露出該封裝層之側面。 The method for manufacturing an electronic package as described in item 7 of the patent application scope, wherein the packaging layer defines a side surface adjacent to the first surface and the second surface, and a part of the surface of the guide pin is exposed outside the packaging layer side. 如申請專利範圍第7項所述之電子封裝件之製法,復包括配置絕緣層於該封裝層之第二表面上,其中,該絕緣層具有複數外露該導腳之開孔。 According to the method of manufacturing an electronic package described in item 7 of the patent application scope, the method further includes disposing an insulating layer on the second surface of the packaging layer, wherein the insulating layer has a plurality of openings exposing the lead pins. 如申請專利範圍第7項所述之電子封裝件之製法,復包括配置作用件於該電子元件與該封裝層之第一表面上。 According to the manufacturing method of the electronic package described in item 7 of the patent application scope, the method further includes arranging the acting part on the first surface of the electronic component and the packaging layer. 如申請專利範圍第12項所述之電子封裝件之製法,復包括配置絕緣層於該封裝層之第二表面上,且該絕緣層具有複數外露該導腳之開孔。 According to the method of manufacturing an electronic package described in item 12 of the patent application range, the method includes disposing an insulating layer on the second surface of the packaging layer, and the insulating layer has a plurality of openings exposing the lead pins. 如申請專利範圍第13項所述之電子封裝件之製法,其中,該作用件之材質與該絕緣層之材質相同。 The manufacturing method of the electronic package as described in item 13 of the patent application scope, wherein the material of the acting part is the same as the material of the insulating layer. 如申請專利範圍第12項所述之電子封裝件之製法,其中,該作用件之材質係採用聚合物,以作為保護層。 The manufacturing method of the electronic package as described in item 12 of the patent application scope, in which the material of the acting part is a polymer as a protective layer. 如申請專利範圍第7項所述之電子封裝件之製法,其中,係採用研磨方式移除該封裝層之部分材質、該電子元件之部分材質及該承載件之部分材質。 The method for manufacturing an electronic package as described in item 7 of the patent application scope, in which part of the material of the packaging layer, part of the material of the electronic component and part of the material of the carrier are removed by grinding. 如申請專利範圍第7項所述之電子封裝件之製法,復包括進行切單作業。 For example, the manufacturing method of electronic packaging described in item 7 of the scope of patent application includes the operation of cutting orders.
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