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TWI690038B - Semiconductor wafer pick-up device, semiconductor wafer packaging device - Google Patents

Semiconductor wafer pick-up device, semiconductor wafer packaging device Download PDF

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TWI690038B
TWI690038B TW108119920A TW108119920A TWI690038B TW I690038 B TWI690038 B TW I690038B TW 108119920 A TW108119920 A TW 108119920A TW 108119920 A TW108119920 A TW 108119920A TW I690038 B TWI690038 B TW I690038B
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semiconductor wafer
push
adhesive sheet
negative pressure
pick
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TW108119920A
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TW201935635A (en
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志賀康一
小西宣明
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日商芝浦機械電子裝置股份有限公司
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Abstract

本發明自黏著片上穩定地剝離半導體晶片。本發明是一種將附著保持於黏著片11上的半導體晶片t自黏著片11上拾取的半導體晶片的拾取裝置,其具備:拾取機構40,自黏著片11上拾取半導體晶片t;上頂機構60,具有使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體(62a~62d),自與半導體晶片t相反側,使負壓作用於被拾取的半導體晶片t於黏著片11中所在的部分,當該半導體晶片t由拾取機構拾取時,藉由多個上推體(62a~62d)來上頂該半導體晶片t;以及負壓調整機構63b,將負壓的大小以錶壓計設定成-85kPa以下。 The present invention stably peels off the semiconductor wafer from the adhesive sheet. The present invention is a pick-up device for picking up a semiconductor wafer t attached to an adhesive sheet 11 from a semiconductor wafer picked up on the adhesive sheet 11, which includes: a pickup mechanism 40 that picks up the semiconductor wafer t from the adhesive sheet 11; , With a plurality of push-up bodies (62a~62d) arranged so that the axis is the same and arranged movably with each other in the axis direction, so that the negative pressure acts on the picked semiconductor wafer from the side opposite to the semiconductor wafer t t is in the part where the adhesive sheet 11 is located, when the semiconductor wafer t is picked up by the pickup mechanism, the semiconductor wafer t is pushed up by a plurality of push-up bodies (62a to 62d); and the negative pressure adjustment mechanism 63b, the negative The magnitude of the pressure is set to -85 kPa or less with a gauge pressure gauge.

Description

半導體晶片的拾取裝置、半導體晶片的封裝裝 置 Semiconductor wafer pick-up device, semiconductor wafer packaging Set

本發明是有關於一種半導體晶片的拾取裝置、半導體晶片的封裝裝置與封裝方法。 The invention relates to a semiconductor wafer pick-up device, a semiconductor wafer packaging device and a packaging method.

將半導體晶片封裝於引線框架或配線基板、插入式基板等基板上的封裝步驟已為人所知。於該封裝步驟中,自晶圓環上一個一個地取出半導體晶片,並移送至基板上來進行封裝。晶圓環是保持附著有被切斷成各半導體晶片而單片化的半導體晶圓的黏著片的環狀的構件。於自晶圓環上取出半導體晶片時,使用如下的拾取裝置,其具備:拾取機構,具有吸附半導體晶片的吸附噴嘴;以及上頂機構,利用上頂針自下表面上頂吸附於吸附噴嘴上的半導體晶片,而對自黏著片上剝離及取出半導體晶片進行輔助。 Packaging steps for packaging semiconductor chips on substrates such as lead frames, wiring substrates, and interposer substrates are known. In this packaging step, the semiconductor chips are taken out one by one from the wafer ring and transferred to the substrate for packaging. The wafer ring is a ring-shaped member that holds an adhesive sheet to which a semiconductor wafer that is cut into individual semiconductor wafers is singulated. When taking out the semiconductor wafer from the wafer ring, the following pick-up device is used, which is provided with: a pick-up mechanism having a suction nozzle for sucking the semiconductor wafer; and an ejection mechanism, which is sucked on the suction nozzle from the lower surface by using an ejector pin The semiconductor wafer assists in peeling and removing the semiconductor wafer from the adhesive sheet.

然而,最近的半導體晶片正如其厚度為50μm以下般進行薄化。當利用前端尖的上頂針僅上頂此種薄的半導體晶片時,產生半導體晶片破裂等損傷的擔憂變大。因此,如專利文獻1中所示般,開發有一種具有多個上推體的拾取裝置。多個上推體使軸線一致而同心地設置,並以附著於半導體晶片的下表面上的黏著片的剝離自半導體晶片的周邊部朝中心部緩慢地進行的方式進行動作。多個上推體的上表面形狀通常形成為與被拾取的半導體晶片相同的形狀,例如四邊形。However, recent semiconductor wafers are thinned as if their thickness is 50 μm or less. When only the thin semiconductor wafer is pushed up by the tip ejector, the risk of damage such as cracking of the semiconductor wafer increases. Therefore, as shown in Patent Document 1, a pickup device having a plurality of push-up bodies has been developed. The plurality of push-up bodies are arranged concentrically and concentrically, and operate so that the peeling of the adhesive sheet attached to the lower surface of the semiconductor wafer slowly proceeds from the peripheral portion toward the center portion of the semiconductor wafer. The shape of the upper surface of the plurality of push-up bodies is generally formed in the same shape as the semiconductor wafer being picked up, for example, a quadrilateral.

於此種拾取裝置中,首先使多個上推體同時上升至規定的高度為止,並向上推被拾取的半導體晶片的整個下表面。其後,留下位於最外側的上推體,並使其他上推體進一步上升至規定的高度為止。繼而,留下第2個上推體並使其他上推體上升。半導體晶片的下表面的利用上推體的支撐自周邊朝中心部依次開放。因此,自半導體晶片的外周側緩慢地剝離黏著片。進而,為了促進黏著片自半導體晶片的下表面上的剝離,提出在上推體的與黏著片的接觸面(上表面)上設置凹部,所述凹部用以使抽吸力作用於所述接觸面(上表面)與黏著片之間。設置於上推體上的凹部變成黏著片開始自半導體晶片上剝離的部位,可促進黏著片自半導體晶片上的剝離。 [現有技術文獻] [專利文獻]In such a pick-up device, first, a plurality of push-up bodies are simultaneously raised to a predetermined height, and the entire lower surface of the picked-up semiconductor wafer is pushed up. Thereafter, the push-up body located on the outermost side is left, and the other push-up bodies are further raised to a prescribed height. Then, the second push-up body is left and the other push-up bodies are raised. The support of the lower surface of the semiconductor wafer by the push-up body is sequentially opened from the periphery toward the center. Therefore, the adhesive sheet is slowly peeled off from the outer peripheral side of the semiconductor wafer. Furthermore, in order to promote the peeling of the adhesive sheet from the lower surface of the semiconductor wafer, it is proposed to provide a recessed portion on the contact surface (upper surface) of the pusher body with the adhesive sheet, the recessed portion for applying a suction force to the contact Between the surface (upper surface) and the adhesive sheet. The concave portion provided on the push-up body becomes a portion where the adhesive sheet starts to peel off from the semiconductor wafer, which can promote the peeling of the adhesive sheet from the semiconductor wafer. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2010-056466號公報[Patent Document 1] Japanese Patent Laid-Open No. 2010-056466

[發明所欲解決之課題] 但是,本申請案發明者等發現即便於使用如所述般的拾取裝置的情況下,有時於半導體晶片中亦產生破損。即,本申請案發明者等確認於用作實驗用途的封裝裝置中,使用多個品種的半導體晶片進行封裝實驗的結果,存在自黏著片上剝離來進行拾取時產生破損的半導體晶片。[Problems to be Solved by the Invention] However, the inventors of the present application have found that even when the pickup device as described above is used, the semiconductor wafer may be damaged. That is, the inventors of the present application confirmed that in a packaging device used for experimental purposes, as a result of a packaging experiment using a plurality of types of semiconductor wafers, there was a semiconductor wafer that was damaged when peeled off from the adhesive sheet and picked up.

本申請案發明者等進行努力研究的結果,查明於半導體晶片的厚度大概為30 μm以下的半導體晶片中比較容易產生破損。因此,使用30 μm以下的多個品種的半導體晶片,進行拾取規定的單位數的半導體晶片的實驗。其結果,判明即便是相同品種的半導體晶片,亦存在破損的產生頻率於各單位數中大不相同的情況。具體而言,針對厚度為27 μm的半導體晶片,於某日的中午以前進行的拾取的實驗中,破損的產生率為92%。相對於此,於次日的中午以前利用相同品種的半導體晶片進行的拾取的實驗中,破損的產生頻率為4%。另外,進而於另一日進行的實驗中,規定的單位數之中,破損集中於前一半中,於後一半中存在幾乎未看到破損者。The inventors of the present application conducted intensive studies and found that semiconductor wafers with a thickness of approximately 30 μm or less are more likely to be damaged. Therefore, experiments using a plurality of types of semiconductor wafers of 30 μm or less to pick up a predetermined number of semiconductor wafers were performed. As a result, it was found that even with the same type of semiconductor wafer, the frequency of occurrence of breakage may be significantly different in each unit number. Specifically, for a semiconductor wafer with a thickness of 27 μm, in the pick-up experiment conducted before noon on a certain day, the occurrence rate of damage was 92%. In contrast, in the pick-up experiment using the same type of semiconductor wafer before noon the next day, the frequency of occurrence of damage was 4%. In addition, in an experiment conducted on another day, among the predetermined number of units, the damage was concentrated in the first half, and in the latter half, there was a person who hardly saw the damage.

發明者等得到該些結果而進一步努力研究的結果,查明於上推時作用於上推體與黏著片之間的抽吸力變動。即,抽吸力是自實驗室中所配備的負壓供給用的配管設備獲得。該配管設備的負壓根據一同利用負壓的其他實驗裝置的使用狀況而變動。即,本申請案發明者等查明半導體晶片的破損與上頂時的抽吸力之間存在密切的關係。The inventors obtained these results and worked hard to find out the fluctuations in the suction force acting between the push-up body and the adhesive sheet during push-up. That is, the suction force is obtained from the piping equipment for negative pressure supply provided in the laboratory. The negative pressure of this piping equipment varies depending on the use conditions of other experimental devices that use negative pressure together. That is, the inventors of the present application have found that there is a close relationship between the breakage of the semiconductor wafer and the suction force at the time of ejection.

本發明的目的在於提供一種可自黏著片上穩定地剝離半導體晶片的半導體晶片的拾取裝置、半導體晶片的封裝裝置與封裝方法。An object of the present invention is to provide a semiconductor wafer pick-up device, a semiconductor wafer packaging device, and a packaging method that can stably peel off a semiconductor wafer from an adhesive sheet.

[解決課題之手段] 本實施形態的半導體晶片的拾取裝置是將附著保持於黏著片上的半導體晶片自所述黏著片上拾取的半導體晶片的拾取裝置,其具備:拾取機構,自所述黏著片上拾取所述半導體晶片;上頂機構,具有使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體,自與所述半導體晶片相反側,使負壓作用於由所述拾取機構所拾取的半導體晶片於所述黏著片中所在的部分,當該半導體晶片由所述拾取機構拾取時,藉由所述多個上推體來上頂該半導體晶片;以及負壓調整機構,將所述負壓的大小以錶壓計設定成-85 kPa以下。[Means for Solving the Problems] The semiconductor wafer pickup device of this embodiment is a semiconductor wafer pickup device that picks up and holds a semiconductor wafer attached to an adhesive sheet from the adhesive sheet, and includes a pickup mechanism that picks up from the adhesive sheet The semiconductor wafer; the top-up mechanism has a plurality of push-up bodies that are arranged so that the shaft center becomes the same and move freely in the direction of the shaft center, and from the side opposite to the semiconductor wafer, the negative pressure acts on the The portion of the semiconductor wafer picked up by the pickup mechanism in the adhesive sheet, when the semiconductor wafer is picked up by the pickup mechanism, the semiconductor wafer is pushed up by the plurality of push-up bodies; and the negative pressure The adjustment mechanism sets the magnitude of the negative pressure to -85 kPa or less with a gauge pressure gauge.

本實施形態的半導體晶片的封裝裝置具備:供給裝置,對附著保持半導體晶片的黏著片進行保持;基板平台,載置基板;所述拾取裝置,自所述供給裝置所保持的所述黏著片上拾取所述半導體晶片;以及封裝機構,將由所述拾取裝置所取出的所述半導體晶片封裝於所述基板上。The semiconductor wafer packaging apparatus of this embodiment includes: a supply device that holds an adhesive sheet attached to and holds a semiconductor wafer; a substrate platform on which a substrate is placed; and the pickup device that picks up from the adhesive sheet held by the supply device The semiconductor wafer; and a packaging mechanism that packages the semiconductor wafer taken out by the pickup device on the substrate.

本實施形態的半導體晶片的封裝方法是將附著保持於黏著片上的半導體晶片自所述黏著片上拾取,並將所拾取的半導體晶片封裝於基板上的半導體晶片的封裝方法,當藉由自所述黏著片上拾取所述半導體晶片的拾取機構而自所述黏著片上拾取所述半導體晶片時,自與該半導體晶片相反側,使負壓作用於所述黏著片上,並且藉由使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體來上頂該半導體晶片之際,將所述負壓的大小以錶壓計設定成-85 kPa以下。The packaging method of the semiconductor wafer of this embodiment is a method of packaging a semiconductor wafer that picks up the semiconductor wafer attached to the adhesive sheet from the adhesive sheet and encapsulates the picked semiconductor wafer on the substrate. When picking up the semiconductor wafer on the adhesive sheet and picking up the semiconductor wafer from the adhesive sheet, a negative pressure is applied to the adhesive sheet from the side opposite to the semiconductor wafer, and by making the axis center the same When a plurality of push-up bodies that are arranged and move freely in the axial direction are pushed up against the semiconductor wafer, the magnitude of the negative pressure is set to -85 kPa or less with a gauge pressure.

[發明的效果] 根據本發明,可自黏著片上穩定地剝離半導體晶片。[Effect of the Invention] According to the present invention, the semiconductor wafer can be stably peeled off from the adhesive sheet.

以下,參照圖式對本發明的實施形態(以下,稱為實施形態)進行具體說明。再者,各構成部的位置及大小等只不過是為了容易理解結構的權宜的表達。Hereinafter, an embodiment of the present invention (hereinafter, referred to as an embodiment) will be specifically described with reference to the drawings. In addition, the position, size, etc. of each component are merely expedient expressions for easy understanding of the structure.

圖1是表示實施形態的半導體晶片的封裝裝置的概略構成的側面圖。半導體晶片的封裝裝置1具備:供給裝置10,供給半導體晶片t;基板平台20,載置封裝半導體晶片t的基板K;中間平台30,配置於該供給裝置10與基板平台20之間,載置半導體晶片t;拾取機構40,自供給裝置10上一個一個地拾取半導體晶片t並移送至中間平台30上;封裝機構50,吸附保持載置於中間平台30上的半導體晶片t,並將其封裝於載置在基板平台20上的基板K上的規定的位置上;上頂機構60,配置於供給裝置10內,並向上推由拾取機構40所拾取的半導體晶片t;以及控制裝置70,控制供給裝置10、基板平台20、拾取機構40、封裝機構50、上頂機構60等。再者,拾取機構40與上頂機構60是拾取裝置的構成元件。FIG. 1 is a side view showing a schematic configuration of a semiconductor wafer packaging device of an embodiment. The semiconductor wafer packaging device 1 includes: a supply device 10 that supplies a semiconductor wafer t; a substrate platform 20 that mounts a substrate K that encapsulates the semiconductor wafer t; an intermediate platform 30 that is disposed between the supply device 10 and the substrate platform 20 and is mounted The semiconductor wafer t; the pickup mechanism 40, which picks up the semiconductor wafer t one by one from the supply device 10 and transfers it to the intermediate platform 30; the packaging mechanism 50, sucks and holds the semiconductor wafer t mounted on the intermediate platform 30, and packages it At a predetermined position on the substrate K placed on the substrate stage 20; the top-up mechanism 60, which is arranged in the supply device 10, and pushes up the semiconductor wafer t picked up by the pickup mechanism 40; and the control device 70, which controls The supply device 10, the substrate stage 20, the pickup mechanism 40, the packaging mechanism 50, the top-up mechanism 60, and the like. Furthermore, the pickup mechanism 40 and the jacking mechanism 60 are constituent elements of the pickup device.

供給裝置10具有晶圓台13,所述晶圓台13藉由未圖示的晶圓環供給裝置來供給對附著有將半導體晶圓W切斷而單片化的多個半導體晶片t的黏著片11進行保持的晶圓環12。晶圓台13藉由未圖示的XYθ方向驅動裝置而可於X方向、Y方向、θ(水平旋轉)方向上移動。X方向、Y方向是相互正交的水平方向。圖示的Z方向是相對於水平方向而垂直的方向。The supply device 10 has a wafer table 13 that supplies adhesion to a plurality of semiconductor wafers t to which a semiconductor wafer W is cut and singulated by a wafer ring supply device (not shown). Wafer ring 12 holding sheet 11. The wafer stage 13 can be moved in the X direction, the Y direction, and the θ (horizontal rotation) direction by an unillustrated XYθ direction driving device. The X direction and the Y direction are horizontal directions orthogonal to each other. The illustrated Z direction is a direction perpendicular to the horizontal direction.

基板平台20藉由未圖示的基板搬入裝置來供給載置封裝前的基板K,封裝有半導體晶片t後的基板K藉由未圖示的基板搬出裝置來取出並搬出。基板平台20由未圖示的XYθ方向驅動裝置支撐,並可於X方向、Y方向、θ(水平旋轉)方向上移動。The substrate platform 20 is supplied with a substrate K before mounting by a substrate loading device (not shown), and the substrate K after packaging the semiconductor wafer t is taken out and carried out by a substrate removal device (not shown). The substrate stage 20 is supported by an unillustrated XYθ direction driving device, and can be moved in the X direction, Y direction, and θ (horizontal rotation) direction.

中間平台30是於將拾取機構40所拾取的半導體晶片t交接至封裝機構50中時,暫時載置半導體晶片t的平台。The intermediate platform 30 is a platform on which the semiconductor wafer t is temporarily placed when the semiconductor wafer t picked up by the pickup mechanism 40 is transferred to the packaging mechanism 50.

拾取機構40具備:吸附噴嘴41,吸附保持半導體晶片t;以及驅動裝置(未圖示),使該吸附噴嘴41如圖1中由虛線箭頭所示般在供給裝置10與中間平台30之間移動。The pickup mechanism 40 includes: a suction nozzle 41 that sucks and holds the semiconductor wafer t; and a drive device (not shown) that moves the suction nozzle 41 between the supply device 10 and the intermediate stage 30 as indicated by the broken arrows in FIG. 1. .

封裝機構50具備:封裝工具51,吸附保持半導體晶片t,並對所吸附保持的半導體晶片t加壓(亦存在併用加熱的情況)來將其封裝於基板K上的規定的位置上;以及驅動裝置(未圖示),使該封裝工具51如由虛線箭頭所示般在中間平台30與基板平台20之間移動。The packaging mechanism 50 includes: a packaging tool 51 that sucks and holds the semiconductor wafer t, pressurizes the semiconductor wafer t that is sucked and held (there may be a combination of heating), and packages it at a predetermined position on the substrate K; and driving A device (not shown) moves the packaging tool 51 between the intermediate stage 30 and the substrate stage 20 as indicated by the dotted arrow.

繼而,使用圖2及圖3來進一步對上頂機構60進行說明。Next, the jacking mechanism 60 will be further described using FIGS. 2 and 3.

上頂機構60具備:支承體61,與由晶圓台13支撐的黏著片11的下表面相向來設置;以及上推機構62,內置於支承體61中,並上頂附著於黏著片11上的半導體晶片t。The top-up mechanism 60 includes: a support body 61 provided to face the lower surface of the adhesive sheet 11 supported by the wafer table 13; and a push-up mechanism 62 built into the support body 61 and attached to the top of the adhesive sheet 11 Semiconductor wafer t.

支承體61對照吸附噴嘴41拾取半導體晶片t的位置而固定地配置。支承體61形成上下表面被堵塞的中空的圓柱形狀,且其上表面被設為自下側吸附支撐黏著片11的支承面61a。另外,支承體61的中空部分成為內部空間61b。The support 61 is fixedly arranged against the position where the suction nozzle 41 picks up the semiconductor wafer t. The support body 61 is formed into a hollow cylindrical shape in which the upper and lower surfaces are blocked, and the upper surface thereof is set as a support surface 61 a that sucks and supports the adhesive sheet 11 from the lower side. In addition, the hollow portion of the support 61 becomes an internal space 61b.

於支承面61a上設置位於被拾取的半導體晶片t的周圍的用以吸附黏著片11的環狀的抽吸槽61c與多個抽吸孔61d。所述抽吸槽61c與多個抽吸孔61d經由連通槽61e或未圖示的連通孔而與支承體61的內部空間61b連通。即,與抽吸泵63連通的真空配管63a與支承體61的內部空間61b連接,而可對內部空間61b內供給負壓。藉由使內部空間61b內變成負壓,可使負壓作用於抽吸槽61c與多個抽吸孔61d中。另外,於真空配管63a上,自抽吸泵63側起依次設置有電空調節器等壓力控制裝置63b、及電磁閥等開關閥63c,而可控制作用於抽吸槽61c與多個抽吸孔61d中的負壓的接通・斷開、及負壓的大小。壓力控制裝置63b作為負壓調整機構發揮功能。壓力控制裝置63b以如下方式設定為宜,即以錶壓計-85 kPa以下,較佳為-90 kPa以下的負壓作用於抽吸槽61c與多個抽吸孔61d中。於本實施形態中,以設為-90 kPa的例子進行說明。此處,所謂錶壓,是指以大氣壓為基準(0 kPa)的相對的壓力。因此,所謂以錶壓計-85 kPa以下,是指包含比大氣壓低85 kPa的壓力、且真空度比該壓力(-85 kPa)高的壓力。即,-90 kPa是真空度比-85 kPa高的壓力。另外,有時進行「-85 kPa以下的負壓」、「將負壓的大小設為-85 kPa」等表達,但均是指以錶壓計的壓力值。The support surface 61a is provided with a ring-shaped suction groove 61c and a plurality of suction holes 61d for sucking the adhesive sheet 11 around the picked-up semiconductor wafer t. The suction groove 61c and the plurality of suction holes 61d communicate with the internal space 61b of the support 61 via the communication groove 61e or a communication hole (not shown). That is, the vacuum piping 63a communicating with the suction pump 63 is connected to the internal space 61b of the support 61, and a negative pressure can be supplied into the internal space 61b. By making the internal space 61b a negative pressure, the negative pressure can be applied to the suction groove 61c and the plurality of suction holes 61d. In addition, a pressure control device 63b such as an electropneumatic regulator and an on-off valve 63c such as an electromagnetic valve are provided in order from the suction pump 63 side on the vacuum piping 63a to control the action on the suction tank 61c and a plurality of suctions The opening and closing of the negative pressure in the hole 61d and the magnitude of the negative pressure. The pressure control device 63b functions as a negative pressure adjustment mechanism. The pressure control device 63b is preferably set in such a manner that a negative pressure of -85 kPa or less, preferably -90 kPa or less, acts on the suction groove 61c and the plurality of suction holes 61d with a gauge pressure. In this embodiment, an example of -90 kPa will be described. Here, the gauge pressure refers to a relative pressure based on atmospheric pressure (0 kPa). Therefore, a gauge pressure of -85 kPa or less means a pressure that includes a pressure 85 kPa lower than atmospheric pressure and a vacuum degree higher than this pressure (-85 kPa). That is, -90 kPa is a pressure with a vacuum degree higher than -85 kPa. In addition, expressions such as "negative pressure of -85 kPa or less" and "setting the magnitude of negative pressure to -85 kPa" are sometimes used, but all refer to the pressure value by a gauge pressure.

再者,可認為壓力控制裝置63b中所設定的壓力直接作用於內部空間61b及抽吸槽61c、抽吸孔61d中。因此,於本實施形態中,在真空配管63a中的開關閥63c與內部空間61b之間的部分設置有壓力檢測器63d。而且,以壓力檢測器63d的檢測值變成-90 kPa的方式設定壓力控制裝置63b的控制壓力。再者,亦可檢測作用於內部空間61b、或者抽吸槽61c或多個抽吸孔61d中的壓力,並以該檢測值變成所述壓力範圍的方式設定壓力控制裝置63b的控制壓力。另外,亦可將抽吸泵63設為作為零件而組裝入封裝裝置1中者,但並不限定於此,亦可為獨立於封裝裝置1而另外準備者,例如亦可為工廠等中所配備的負壓供給用的配管設備。總之,只要是可對壓力控制裝置63b穩定地供給以錶壓計-85 kPa以下的負壓的負壓源即可。Furthermore, it can be considered that the pressure set in the pressure control device 63b directly acts on the internal space 61b, the suction groove 61c, and the suction hole 61d. Therefore, in this embodiment, the pressure detector 63d is provided in the portion between the on-off valve 63c and the internal space 61b in the vacuum piping 63a. Then, the control pressure of the pressure control device 63b is set so that the detection value of the pressure detector 63d becomes -90 kPa. Furthermore, the pressure acting on the internal space 61b, or the suction groove 61c or the plurality of suction holes 61d may be detected, and the control pressure of the pressure control device 63b may be set so that the detected value becomes the pressure range. In addition, the suction pump 63 may be assembled into the packaging device 1 as a component, but it is not limited to this, and may be prepared separately from the packaging device 1, for example, may be used in a factory, etc. Equipped with piping equipment for negative pressure supply. In short, as long as it is a negative pressure source that can stably supply negative pressure of -85 kPa or less with a gauge pressure to the pressure control device 63b.

上推機構62具備:第1上推體~第4上推體(62a、62b、62c、62d);以及第1升降驅動裝置~第4升降驅動裝置(62e、62f、62g、62h),對應於第1上推體62a~第4上推體62d來設置,並使第1上推體62a~第4上推體62d個別地升降移動。The push-up mechanism 62 includes: the first push-up body to the fourth push-up body (62a, 62b, 62c, 62d); and the first lift-up driving device to the fourth lift-up driving device (62e, 62f, 62g, 62h), corresponding to The first push-up body 62a to the fourth push-up body 62d are provided, and the first push-up body 62a to the fourth push-up body 62d are individually moved up and down.

第1上推體62a~第4上推體62d之中,第1上推體62a~第3上推體62c於俯視下形成矩形的角筒狀,而成為使軸心變成相同的三重結構。第4上推體62d形成角柱狀,使軸心與第1上推體62a~第3上推體62c變成相同並配置於該些上推體的中央。再者,於本實施形態中,設置有四個上推體(62a~62d),但並不限定於此四個,亦可為兩個、三個、或五個以上。Among the first push-up body 62a to the fourth push-up body 62d, the first push-up body 62a to the third push-up body 62c are formed in a rectangular angular cylindrical shape in a plan view, and have a triple structure in which the axes are the same. The fourth push-up body 62d is formed in the shape of a prism, so that its axis is the same as that of the first push-up body 62a to the third push-up body 62c, and is arranged at the center of the push-up bodies. Furthermore, in this embodiment, four push-up bodies (62a to 62d) are provided, but it is not limited to these four, and may be two, three, or more than five.

第1上推體62a是位於最外側的上推體,其於設置在支承體61的上表面,即支承面61a的中央的矩形的開口部61f內,與該開口部61f的邊緣之間設置間隙來配置。即,開口部61f的形狀與第1上推體62a的外形相似,且比第1上推體62a的外形略大地形成。另外,於俯視下,第1上推體62a的前端面的形狀與成為上推的對象的半導體晶片t相似,且形成為比半導體晶片t略小的尺寸。因此,當向上推半導體晶片t時,半導體晶片t的緣部自第1上推體62a的周圍略微地露出。The first push-up body 62a is the push-out body located on the outermost side, and is provided in the rectangular opening 61f provided on the upper surface of the support 61, that is, in the center of the support surface 61a, and between the edge of the opening 61f Gap to configure. That is, the shape of the opening 61f is similar to the outer shape of the first push-up body 62a, and is formed slightly larger than the outer shape of the first push-up body 62a. Further, in a plan view, the shape of the front end surface of the first push-up body 62a is similar to the semiconductor wafer t to be pushed up, and is formed to have a slightly smaller size than the semiconductor wafer t. Therefore, when the semiconductor wafer t is pushed up, the edge of the semiconductor wafer t is slightly exposed from the periphery of the first push-up body 62a.

第2上推體62b以被引導至第1上推體62a的內側面的狀態配置於第1上推體62a的內側。第3上推體62c以被引導至第2上推體62b的內側面的狀態配置於第2上推體62b的內側。第4上推體62d以被引導至第3上推體62c的內側面的狀態配置於第3上推體62c的內側。The second push-up body 62b is arranged inside the first push-up body 62a while being guided to the inner side surface of the first push-up body 62a. The third push-up body 62c is arranged inside the second push-up body 62b in a state of being guided to the inner surface of the second push-up body 62b. The fourth push-up body 62d is arranged inside the third push-up body 62c while being guided to the inner side surface of the third push-up body 62c.

所述上推體62a~上推體62d藉由第1升降驅動裝置62e~第4升降驅動裝置62h,按照事先設定的動作條件而上下移動。於本實施形態中,最初使所有上推體(62a~62d)自支承面61a的高度上升至突出規定量的高度為止。其後,以自外側起按順序,即按第1上推體、第2上推體、第3上推體、第4上推體的順序依次下降至支承面61a的高度以下為止的方式,設定動作條件。再者,動作條件只要設定成對應於拾取對象的半導體晶片t、附著半導體晶片t的黏著片11的品種等的動作即可。The push-up bodies 62a to 62d are moved up and down by the first lift drive device 62e to the fourth lift drive device 62h in accordance with the operating conditions set in advance. In this embodiment, initially, all the push-up bodies (62a to 62d) are raised from the height of the support surface 61a to a height that protrudes by a predetermined amount. Thereafter, in order from the outside, that is, in order of the first push-up body, the second push-up body, the third push-up body, and the fourth push-up body, they are sequentially lowered to below the height of the support surface 61a, Set the operating conditions. In addition, the operation condition may be set to correspond to the operation of the semiconductor wafer t to be picked up, the type of the adhesive sheet 11 to which the semiconductor wafer t is attached, and the like.

另外,於第1上推體62a~第3上推體62c的上端部,如圖4(A)所示,分別設置凸部64、凸部65與凹部66。再者,於圖4(A)及圖4(B)中,對凹部66的形成位置附加斜線,而使與凸部64、凸部65的區別變得明確。於第1上推體62a的形成矩形框狀的上端面的四個角部分別形成凸部64A。另外,於第1上推體62a的矩形框狀的上端面的四個側邊部,以大致均等的間隔分別設置多個凸部65A。而且,在凸部64A與凸部65A之間及凸部65A彼此之間分別設置凹部66A。於第2上推體62b的矩形框狀的上端面的四個角部分別形成凸部64B。另外,於第2上推體62b的矩形框狀的上端面的四個側邊部,以大致均等的間隔分別設置多個凸部65B。而且,在凸部64B與凸部65B之間及凸部64B彼此之間分別設置凹部66B。另外,第2上推體62b的凸部65B與凹部66B的配置相對於第1上推體62a的凸部65A與凹部66A的配置,變成相互不同的關係。於第3上推體62c的矩形框狀的上端面上,與第1上推體62a、第2上推體62b同樣地,亦形成凸部64C、凸部65C與凹部66C。第3上推體62c的凸部65C與凹部66C的配置相對於第2上推體62b的凸部65B與凹部66B的配置,變成相互不同的關係。所述凸部64A~凸部64C、凸部65A~凸部65C的上表面及第4上推體62d的上表面以可在與支承面61a同一平面上支撐黏著片11的方式形成。而且,以由凸部64A~凸部64C、凸部65A~凸部65C的上表面與第4上推體62d的上表面所形成的平面的面精度變成20 μm以下的方式形成。In addition, as shown in FIG. 4(A), convex portions 64, convex portions 65, and concave portions 66 are respectively provided at the upper end portions of the first push-up body 62 a to the third push-up body 62 c. In addition, in FIGS. 4(A) and 4(B), a diagonal line is added to the formation position of the concave portion 66 to make the difference from the convex portion 64 and the convex portion 65 clear. Convex portions 64A are formed at the four corners of the upper end surface of the first push-up body 62a that form a rectangular frame shape, respectively. In addition, a plurality of convex portions 65A are provided on the four side portions of the rectangular frame-like upper end surface of the first push-up body 62a at substantially equal intervals. Further, recesses 66A are provided between the convex portions 64A and the convex portions 65A and between the convex portions 65A. Convex portions 64B are formed on the four corners of the rectangular frame-like upper end surface of the second push-up body 62b, respectively. In addition, a plurality of convex portions 65B are provided at substantially equal intervals on the four side portions of the rectangular frame-like upper end surface of the second push-up body 62b. Moreover, the concave portion 66B is provided between the convex portion 64B and the convex portion 65B and between the convex portion 64B. In addition, the arrangement of the convex portions 65B and the concave portions 66B of the second push-up body 62b has a different relationship from the arrangement of the convex portions 65A and the concave portions 66A of the first push-up body 62a. A convex portion 64C, a convex portion 65C, and a concave portion 66C are also formed on the rectangular frame-shaped upper end surface of the third push-up body 62c, similar to the first push-up body 62a and the second push-up body 62b. The arrangement of the convex portions 65C and the concave portions 66C of the third push-up body 62c has a different relationship from the arrangement of the convex portions 65B and the concave portions 66B of the second push-up body 62b. The upper surfaces of the convex portions 64A to 64C, the convex portions 65A to 65C, and the upper surface of the fourth push-up body 62d are formed so as to support the adhesive sheet 11 on the same plane as the support surface 61a. Further, the plane accuracy formed by the upper surface of the convex portion 64A to the convex portion 64C, the convex portion 65A to the convex portion 65C, and the upper surface of the fourth push-up body 62d becomes 20 μm or less.

另外,設置於側邊部的各凸部(65A~65C)較佳為以沿著側邊部的方向的長度變成0.4 mm以上、2.0 mm以下的方式形成。另外,各凹部(66A~66C)的沿著側邊部的方向的長度可設為與凸部65A~凸部65C的長度相同,亦可不同,但較佳為與凸部65A~凸部65C同樣地,以沿著側邊部的方向的長度變成0.4 mm以上、2.0 mm以下的方式形成。另外,可將鄰接的凹部66A與凹部66B及凹部66B與凹部66C設為如一部分重疊般的配置,但重疊部分的長度較佳為設為沿著側邊部的方向上的凹部66A~凹部66C的長度的20%以下。因此,凹部66A~凹部66C的長度較佳為以相對於凸部65A~凸部65C的長度變成0.8倍以上且1.2倍以下的方式形成。In addition, each convex portion (65A to 65C) provided in the side portion is preferably formed such that the length in the direction of the side portion becomes 0.4 mm or more and 2.0 mm or less. In addition, the length of each concave portion (66A to 66C) in the direction along the side portion may be the same as or different from the length of the convex portion 65A to the convex portion 65C, but it is preferably the same as that of the convex portion 65A to the convex portion 65C Similarly, it is formed so that the length along the direction of the side portion becomes 0.4 mm or more and 2.0 mm or less. In addition, the adjacent recesses 66A and 66B and the recesses 66B and 66C may be arranged to partially overlap, but the length of the overlapping portion is preferably set to the recesses 66A to 66C in the direction along the side edges. Less than 20% of the length. Therefore, the lengths of the concave portions 66A to 66C are preferably formed such that the lengths of the convex portions 65A to 65C become 0.8 times or more and 1.2 times or less.

進而,於第1上推體62a~第4上推體62d與支承體61一同支撐黏著片11的狀態下,可使負壓作用於第1上推體62a~第4上推體62d的上端面與黏著片11之間。即,支承體61的開口部61f與內部空間61b連通,在第1上推體62a與開口部61f的邊緣之間存在間隙。另外,於上推體62a~上推體62d彼此之間亦存在間隙。因此,內部空間61b內的負壓穿過該些間隙而作用於第1上推體62a~第4上推體62d的上端面與黏著片11之間。即,以設定成所述壓力範圍的負壓,具體而言,-90 kPa的負壓作用於上頂機構60與黏著片11之間的方式構成。Furthermore, in a state where the first push-up body 62a to the fourth push-up body 62d supports the adhesive sheet 11 together with the support 61, a negative pressure can be applied to the first push-up body 62a to the fourth push-up body 62d Between the end surface and the adhesive sheet 11. That is, the opening 61f of the support 61 communicates with the internal space 61b, and there is a gap between the first pusher 62a and the edge of the opening 61f. In addition, there is also a gap between the push-up bodies 62a to 62d. Therefore, the negative pressure in the internal space 61 b passes through these gaps and acts between the upper end surfaces of the first pusher 62 a to the fourth pusher 62 d and the adhesive sheet 11. That is, the negative pressure set in the pressure range, specifically, the negative pressure of -90 kPa acts between the jacking mechanism 60 and the adhesive sheet 11.

控制裝置70具備存儲部71。於存儲部71中存儲上推體62a~上推體62d的動作條件等封裝裝置1的動作所需的資料。控制裝置70參照存儲於存儲部71中的資料,控制供給裝置10、基板平台20、拾取機構40、封裝機構50、上頂機構60等。 (動作的說明) 繼而,使用圖1及圖5(A)~圖7(B)對封裝裝置1及拾取裝置的動作進行說明。The control device 70 includes a storage unit 71. The storage unit 71 stores data necessary for the operation of the packaging device 1 such as the operating conditions of the push-up bodies 62 a to 62 d. The control device 70 refers to the data stored in the storage unit 71 and controls the supply device 10, the substrate stage 20, the pickup mechanism 40, the packaging mechanism 50, the top-up mechanism 60, and the like. (Description of Operation) Next, the operations of the packaging device 1 and the pickup device will be described using FIGS. 1 and 5(A) to 7(B).

首先,將於黏著片11上附著有多個半導體晶片t的晶圓環12設置於供給裝置10的晶圓台13上。另外,藉由未圖示的基板搬入裝置來將封裝前的基板K載置於基板平台20上。First, the wafer ring 12 with a plurality of semiconductor chips t attached to the adhesive sheet 11 is placed on the wafer table 13 of the supply device 10. In addition, the substrate K before packaging is placed on the substrate stage 20 by a substrate loading device (not shown).

於該狀態下,拾取機構40的吸附噴嘴41拾取於供給裝置10上被定位在拾取位置上的半導體晶片t並移送至中間平台30上。封裝機構50的封裝工具51接收被移送至中間平台30上的半導體晶片t,並將其封裝於載置在基板平台20上的基板K的規定的封裝位置上。重複執行此種動作,將半導體晶片t依次封裝於基板K的各封裝位置上。In this state, the suction nozzle 41 of the pickup mechanism 40 picks up the semiconductor wafer t positioned on the pickup position on the supply device 10 and transfers it to the intermediate stage 30. The packaging tool 51 of the packaging mechanism 50 receives the semiconductor wafer t transferred onto the intermediate platform 30 and packages it at a predetermined packaging position of the substrate K placed on the substrate platform 20. Repeating this operation, the semiconductor wafer t is sequentially packaged at each package position of the substrate K.

再者,於利用拾取裝置的拾取時,即,於吸附噴嘴41拾取半導體晶片t時,上頂機構60如以下般進行動作。Furthermore, during pickup by the pickup device, that is, when the suction nozzle 41 picks up the semiconductor wafer t, the jacking mechanism 60 operates as follows.

如圖5(A)所示,若將拾取對象的半導體晶片t定位於上頂機構60的正上方,即拾取位置上,則上頂裝置60藉由支承面61a來支撐黏著片11的下表面。而且,藉由打開開關閥63c,而使規定的負壓(-90 kPa的負壓)作用於抽吸槽61c及抽吸孔61d中來吸附保持黏著片11。As shown in FIG. 5(A), if the semiconductor wafer t to be picked is positioned directly above the lifting mechanism 60, that is, at the pickup position, the lifting device 60 supports the lower surface of the adhesive sheet 11 by the support surface 61a . Then, by opening the on-off valve 63c, a predetermined negative pressure (a negative pressure of -90 kPa) acts on the suction groove 61c and the suction hole 61d to attract and hold the adhesive sheet 11.

若藉由支承面61a來吸附保持黏著片11,則如圖5(B)所示,使吸附噴嘴41下降來抵接於半導體晶片t上,而吸附保持半導體晶片t。When the support surface 61a sucks and holds the adhesive sheet 11, as shown in FIG. 5(B), the suction nozzle 41 is lowered to abut on the semiconductor wafer t, and the semiconductor wafer t is sucked and held.

若吸附噴嘴41吸附半導體晶片t,則如圖5(C)所示,使第1上推體62a~第4上推體62d僅上升事先設定的高度。此時,吸附噴嘴41同步地上升。藉此,黏著片11由第1上推體62a~第4上推體62d上推成凸狀。此時,-90 kPa的負壓作用於黏著片11與支承面61a及第1上推體62a~第4上推體62d的上端面之間。因此,藉由負壓而下拉的力作用於黏著片11中由第1上推體62a~第4上推體62d向上推而傾斜的部分11a上。藉此,於半導體晶片t的外緣部,更具體而言,於半導體晶片t中自第1上推體62a露出的外緣部,欲自半導體晶片t上剝掉的力作用於黏著片11上。藉此,自半導體晶片t的所述外緣部剝離黏著片11。再者,此時半導體晶片t的露出量少,因此即便於半導體晶片t的各邊的整個區域同時開始黏著片t的剝離,亦不會產生半導體晶片t的損傷。When the suction nozzle 41 sucks the semiconductor wafer t, as shown in FIG. 5(C), the first push-up body 62a to the fourth push-up body 62d are raised by a predetermined height. At this time, the suction nozzle 41 rises synchronously. As a result, the adhesive sheet 11 is pushed up by the first push-up body 62a to the fourth push-up body 62d into a convex shape. At this time, a negative pressure of -90 kPa acts between the adhesive sheet 11 and the support surface 61a and the upper end surfaces of the first push-up body 62a to the fourth push-up body 62d. Therefore, the force pulled down by the negative pressure acts on the portion 11a of the adhesive sheet 11 which is inclined upward by being pushed upward by the first push-up body 62a to the fourth push-up body 62d. By this, the outer edge portion of the semiconductor wafer t, more specifically, the outer edge portion exposed from the first push-up body 62a in the semiconductor wafer t, the force to be peeled off the semiconductor wafer t acts on the adhesive sheet 11 on. Thereby, the adhesive sheet 11 is peeled from the outer edge portion of the semiconductor wafer t. Furthermore, since the amount of exposure of the semiconductor wafer t is small at this time, even if the peeling of the adhesive sheet t starts over the entire area of each side of the semiconductor wafer t, damage to the semiconductor wafer t will not occur.

另外,此時-90 kPa的負壓亦作用於第1上推體62a的凹部66A中。因此,於半導體晶片t的邊緣中的與凹部66A相向的部分,藉由作用於黏著片11上的負壓,比其他邊緣更促進黏著片11自半導體晶片t上的剝離。圖4(B)是示意性地表示於凹部66中黏著片11的剝離已進行的狀態的平面圖,於凹部66中產生如圖中由符號P所示的大致新月形(由斜線所示的凹部66內的空白部分)的剝離部。再者,於圖4(B)中,在所有凹部(66A、66B、66C)中顯示有剝離部P,但於該階段,大概僅於第1上推體62a的凹部66A的部分中產生剝離部P。另外,該剝離部P以於後述的第2上推體62b開始下降之前的期間內,藉由負壓的作用而朝第2上推體62b伸長的方式擴大。At this time, the negative pressure of -90 kPa also acts on the recess 66A of the first push-up body 62a. Therefore, the portion of the edge of the semiconductor wafer t facing the recess 66A promotes the peeling of the adhesive sheet 11 from the semiconductor wafer t by the negative pressure acting on the adhesive sheet 11 more than other edges. 4(B) is a plan view schematically showing a state where the peeling of the adhesive sheet 11 has proceeded in the concave portion 66, and a roughly crescent shape (shown by diagonal lines) as shown by the symbol P in the figure is generated in the concave portion 66. The blank portion in the concave portion 66) is a peeling portion. In addition, in FIG. 4(B), peeling portions P are shown in all the concave portions (66A, 66B, 66C), but at this stage, peeling is likely to occur only in the portion of the concave portion 66A of the first push-up body 62a Department P. In addition, the peeling portion P expands so as to extend toward the second push-up body 62b by the action of negative pressure during the period before the second push-up body 62b described later starts to fall.

於自第1上推體62a~第4上推體62d上升起經過規定的待機時間後,如圖6(A)所示,第1上推體62a下降。第1上推體62a下降至第1上推體62a的上端面比支承面61a低規定的高度的位置為止。藉此,第1上推體62a與半導體晶片t分離。藉由第1上推體62a下降,於藉由自身的張力與負壓而下拉的方向,即自半導體晶片t上剝掉的方向上,力作用於黏著片11中的迄今為止由第1上推體62a支撐的部分上。藉由該力,而朝半導體晶片t的中央進行黏著片11的剝離。圖6(A)中所示的狀態是已自半導體晶片t上剝掉由第1上推體62a支撐的黏著片11的狀態。另外,此時負壓亦作用於第2上推體62b的凹部66B中,因此在與凹部66B相向的部分進行黏著片11的剝離。藉此,如圖4(B)所示,於對應於第2上推體62b的凹部66B的部分中產生剝離部P。After a predetermined waiting time has elapsed since the first push-up body 62 a to the fourth push-up body 62 d have risen, as shown in FIG. 6(A), the first push-up body 62 a is lowered. The first push-up body 62a is lowered to a position where the upper end surface of the first push-up body 62a is lower than the support surface 61a by a predetermined height. As a result, the first push-up body 62a is separated from the semiconductor wafer t. By the first push-up body 62a descending, in the direction of being pulled down by its own tension and negative pressure, that is, in the direction of peeling off from the semiconductor wafer t, the force acts on the adhesive sheet 11 so far from the first On the portion supported by the push body 62a. With this force, the adhesive sheet 11 is peeled toward the center of the semiconductor wafer t. The state shown in FIG. 6(A) is a state where the adhesive sheet 11 supported by the first push-up body 62a has been peeled off the semiconductor wafer t. In addition, at this time, the negative pressure also acts on the concave portion 66B of the second push-up body 62b, so the adhesive sheet 11 is peeled off at the portion facing the concave portion 66B. Thereby, as shown in FIG. 4(B), a peeling portion P occurs in a portion corresponding to the recess 66B of the second push-up body 62b.

進而,於經過規定的待機時間後,如圖6(B)所示,第2上推體62b下降至第1上推體62a的位置為止。此時,與第1上推體62a下降時同樣地,亦進行黏著片11中的由第2上推體62b支撐的部分的剝離。另外,如圖6(B)所示,在與第3上推體62c的凹部66C相向的部分進行黏著片11的剝離,並產生剝離部P。另外,於進而經過規定的待機時間後,如圖6(C)所示,第3上推體62c下降至第1上推體62a、第2上推體62b的位置為止。此時,與第1上推體62a、第2上推體62b下降時同樣地,亦進行黏著片11中的由第3上推體62c支撐的部分的剝離。Furthermore, after a predetermined standby time has passed, as shown in FIG. 6(B), the second push-up body 62b is lowered to the position of the first push-up body 62a. At this time, in the same manner as when the first push-up body 62a is lowered, the portion of the adhesive sheet 11 supported by the second push-up body 62b is also peeled off. In addition, as shown in FIG. 6(B), the adhesive sheet 11 is peeled off at a portion facing the concave portion 66C of the third push-up body 62 c, and a peeling portion P is generated. In addition, after a predetermined waiting time has passed, as shown in FIG. 6(C), the third push-up body 62c is lowered to the positions of the first push-up body 62a and the second push-up body 62b. At this time, as in the case where the first push-up body 62a and the second push-up body 62b are lowered, the portion of the adhesive sheet 11 supported by the third push-up body 62c is also peeled off.

於自第3上推體62c下降起經過規定的待機時間後,如圖7(A)所示,第4上推體62d下降至第1上推體62a~第3上推體62c的位置為止。藉此,進行黏著片11中的由第4上推體62d支撐的部分的剝離。圖7(A)中所示的狀態表示該剝離的進行過程。After a predetermined waiting time has elapsed since the third push-up body 62c is lowered, as shown in FIG. 7(A), the fourth push-up body 62d is lowered to the position of the first push-up body 62a to the third push-up body 62c . With this, the portion of the adhesive sheet 11 supported by the fourth push-up body 62d is peeled off. The state shown in FIG. 7(A) shows the progress of the peeling.

再者,使各上推體(62a~62d)下降之前的待機時間可設定成相同的時間,亦可設定個別的時間。但是,將該待機時間設定得長會導致生產性下降,因此以考慮生產性來設定為宜。即,於半導體晶片t的封裝步驟中所使用的封裝裝置1中,表示每一小時可封裝的半導體晶片t的數量的單位產能(Unit Per Hour,UPH)是影響生產性的重要的因素。因此,為了謀求生產性的提昇,較佳為UPH的數值高。為了提高該數值,必須於極短的時間內進行一個一個的半導體晶片t的封裝。此時,無法縮短將半導體晶片t加壓接合(有時亦併用加熱)於基板K上的時間,即所謂的接合時間。因此,要求將與半導體晶片t的加壓接合同時並行地執行的半導體晶片t的移送所需要的時間納入接合時間內。再者,所謂移送所需要的時間,是指自吸附噴嘴41位於拾取位置的正上方至朝定位於拾取位置上的半導體晶片t下降、拾取半導體晶片t、移送並載置於中間平台30上為止所需要的時間。Furthermore, the standby time before lowering each push-up body (62a-62d) may be set to the same time, or an individual time may be set. However, setting the standby time longer will result in a decrease in productivity, so it is appropriate to set it in consideration of productivity. That is, in the packaging device 1 used in the packaging step of the semiconductor wafer t, the unit capacity per unit (UPH) indicating the number of semiconductor wafers t that can be packaged per hour is an important factor affecting productivity. Therefore, in order to improve productivity, it is preferable that the value of UPH is high. In order to increase this value, the semiconductor wafers t must be packaged one by one in a very short time. At this time, it is impossible to shorten the time for the semiconductor wafer t to be pressure-bonded (sometimes combined with heating) on the substrate K, that is, the so-called bonding time. Therefore, it is required to incorporate the time required for the transfer of the semiconductor wafer t performed in parallel with the pressure bonding of the semiconductor wafer t into the bonding time. In addition, the time required for the transfer refers to the time from when the suction nozzle 41 is located directly above the pickup position to when the semiconductor wafer t positioned at the pickup position is lowered, the semiconductor wafer t is picked up, transferred, and placed on the intermediate platform 30 The time required.

因此,要求以移送所需要的時間變成接合時間以內的條件設定所述待機時間。例如,當接合時間為1.2秒,位於拾取位置的正上方的吸附噴嘴41下降至半導體晶片t為止的時間及將吸附噴嘴41所拾取的半導體晶片t移送並載置於中間平台30上為止的時間合計為0.5秒時,可用於上推機構62上頂半導體晶片t的時間變成不足1.2秒-0.5秒=0.7秒。於此情況下,必須將所述待機時間設定成不足0.1秒~0.3秒左右。即,待機時間是可設定的範圍因接合時間而被限制成極短的時間的範圍內者,對於拾取裝置要求在該短時間內自半導體晶片t上剝離黏著片11。Therefore, it is required to set the standby time under the condition that the time required for the transfer becomes within the engagement time. For example, when the bonding time is 1.2 seconds, the time until the suction nozzle 41 directly above the pickup position descends to the semiconductor wafer t and the time until the semiconductor wafer t picked up by the suction nozzle 41 is transferred and placed on the intermediate stage 30 When the total is 0.5 seconds, the time available for the push-up mechanism 62 to lift the semiconductor wafer t becomes less than 1.2 seconds-0.5 seconds = 0.7 seconds. In this case, the standby time must be set to less than about 0.1 second to 0.3 second. That is, the standby time is within a range where the settable range is limited to an extremely short time due to the bonding time, and the pickup device is required to peel off the adhesive sheet 11 from the semiconductor wafer t within the short time.

如本實施形態般,使設定成所述壓力範圍的負壓作用於上頂機構60與黏著片11之間,藉此即便將所述待機時間設定成不足0.1秒~0.3秒左右的短時間,於該期間內,亦能夠使僅可自半導體晶片t上剝離上推體62a~上推體62c的支撐被解除的黏著片11的部分的力充分地發揮作用。As in the present embodiment, the negative pressure set in the pressure range acts between the jacking mechanism 60 and the adhesive sheet 11, so that even if the standby time is set to a short time of less than about 0.1 seconds to 0.3 seconds, During this period, it is also possible to sufficiently exert the force that can peel only the portion of the push-up body 62a to the push-up body 62c from the semiconductor wafer t that supports the released adhesive sheet 11.

再者,於自第4上推體62d下降起經過規定的待機時間後,如圖7(B)所示,使吸附噴嘴41上升,並拾取半導體晶片t。另外,將開關閥63c關閉而停止負壓,第1上推體62a~第4上推體62d上升至原來的高度,即上端與支承面61a一致的高度為止。 (作用效果) 根據此種實施形態的封裝裝置1,具備具有拾取機構40與上頂機構60來構成的拾取裝置,當藉由拾取機構40的吸附噴嘴41而自黏著片11上拾取半導體晶片t時,使用上頂機構60的上推機構62,自黏著片11的下側上頂被拾取的半導體晶片t。於該上頂時,將作用於上頂機構60與黏著片11之間的負壓的大小以錶壓計設定成-85 kPa以下。所謂作用於上頂機構60與黏著片11之間的負壓,具體而言,是指作用於支承體61的抽吸槽61c與抽吸孔61d、及各上推體(62a~62d)與黏著片11之間,上推體62a~上推體62d的凹部66A~凹部66C內的負壓。Furthermore, after a predetermined waiting time has elapsed since the fourth pusher 62d descended, as shown in FIG. 7(B), the suction nozzle 41 is raised to pick up the semiconductor wafer t. In addition, the on-off valve 63c is closed to stop the negative pressure, and the first to fourth pushers 62a to 62d rise to the original height, that is, the height at which the upper end coincides with the support surface 61a. (Functions and effects) According to the packaging device 1 of this embodiment, the pickup device including the pickup mechanism 40 and the ejection mechanism 60 is provided. When the suction nozzle 41 of the pickup mechanism 40 picks up the semiconductor wafer t from the adhesive sheet 11 At this time, the push-up mechanism 62 of the push-up mechanism 60 is used to push up the picked-up semiconductor wafer t from the lower side of the adhesive sheet 11. During this jacking, the magnitude of the negative pressure acting between the jacking mechanism 60 and the adhesive sheet 11 is set to -85 kPa or less with a gauge pressure. The negative pressure acting between the jacking mechanism 60 and the adhesive sheet 11 specifically refers to the suction groove 61c and the suction hole 61d acting on the support 61, and the push-up bodies (62a to 62d) and Between the adhesive sheets 11, the negative pressure in the recesses 66A to 66C of the push-up bodies 62a to 62d.

藉由使此種負壓發揮作用,當利用上推機構62自黏著片11的下方上頂半導體晶片t時,可於使多個上推體(62a~62d)支撐半導體晶片t的面積階段性地減少時,追隨支撐面積的減少而自半導體晶片t上剝離黏著片。By making this negative pressure work, when the semiconductor wafer t is lifted from below the adhesive sheet 11 by the push-up mechanism 62, the area of the semiconductor wafer t supported by the plurality of push-up bodies (62a to 62d) can be stepwise When the ground area decreases, the adhesive sheet is peeled from the semiconductor wafer t following the decrease in the supporting area.

另外,因將所設定的負壓的壓力範圍設為-85 kPa以下,故即便自使多個上推體(62a~62d)中的一個與半導體晶片t分離至下一個上推體分離為止的時間(所述待機時間)為不足0.1秒~0.3秒左右的短時間,於該期間內,亦可自半導體晶片t上剝離上推體62a~上推體62c的支撐被解除的黏著片11的部分。因此,即便是30 μm以下的厚度的半導體晶片,亦可自黏著片11上迅速地剝離,而可防止損害生產性。In addition, since the pressure range of the set negative pressure is -85 kPa or less, even if one of the plurality of push-up bodies (62a to 62d) is separated from the semiconductor wafer t until the next push-up body is separated The time (the standby time) is a short time of less than about 0.1 second to 0.3 second. During this period, the adhesive sheet 11 from which the support of the push-up bodies 62a to 62c is released can be peeled from the semiconductor wafer t section. Therefore, even a semiconductor wafer with a thickness of 30 μm or less can be quickly peeled off from the adhesive sheet 11 to prevent damage to productivity.

另外,於第1上推體62a~第3上推體62c的上端部交替地形成有凸部64、凸部65與凹部66。藉此,設定成所述壓力範圍的負壓(-85 kPa以下的負壓)作用於與設置在凸部64與凸部65之間及凸部65彼此之間的凹部66相向的黏著片11的部位上。因此,在對應於凹部66的黏著片11的部分,可不等待上推體62a~上推體62c的下降(與半導體晶片t的分離),而進行黏著片11自半導體晶片t上的剝離。其結果,當使上推體62a~上推體62c下降時,可更迅速地進行黏著片11自半導體晶片t上的剝離。而且,當上推體62a~上推體62c已開始下降時,在對應於該上推體62a~上推體62c的凹部66的黏著片11的部分進行自半導體晶片t上的剝離。因此,由上推體62a~上推體62c支撐的部分的黏著片11的剝離分成兩次來進行,因此與上推體62a~上推體62c下降後才一齊開始該部分的剝離的情況相比,可格外地減少作用於半導體晶片t上的應力。因此,即便是容易產生破損的厚度薄的半導體晶片t,例如30 μm以下的厚度的半導體晶片t,亦可良好地進行拾取。進而,當自半導體晶片t上剝離對應於凹部66的黏著片11的部分時,藉由凸部64、凸部65,自凹部66的兩側(沿著半導體晶片t的邊的方向的兩側)與中央側的三側支撐半導體晶片t。因此,即便自半導體晶片t上剝掉的方向的力作用於黏著片11上,與在半導體晶片t的周緣部的整個區域的支撐被解除的狀態下力作用於黏著片11上的情況相比,亦可格外地減少半導體晶片t中所產生的應力。In addition, convex portions 64, convex portions 65, and concave portions 66 are alternately formed on the upper end portions of the first push-up body 62a to the third push-up body 62c. With this, the negative pressure set in the pressure range (negative pressure of −85 kPa or less) acts on the adhesive sheet 11 facing the concave portion 66 provided between the convex portion 64 and the convex portion 65 and between the convex portions 65. On the site. Therefore, in the portion of the adhesive sheet 11 corresponding to the recess 66, the adhesive sheet 11 can be peeled off the semiconductor wafer t without waiting for the push-up bodies 62a to 62c to fall (separation from the semiconductor wafer t). As a result, when the push-up bodies 62a to 62c are lowered, peeling of the adhesive sheet 11 from the semiconductor wafer t can be performed more quickly. Then, when the push-up bodies 62a to 62c have started to descend, peeling off from the semiconductor wafer t occurs at the portion of the adhesive sheet 11 corresponding to the recess 66 of the push-up bodies 62a to 62c. Therefore, the peeling of the adhesive sheet 11 of the portion supported by the push-up body 62a to the push-up body 62c is performed in two steps, so it is the same as the case where the peeling of the part starts only after the push-up body 62a to the push-up body 62c are lowered In comparison, the stress acting on the semiconductor wafer t can be reduced particularly. Therefore, even a thin semiconductor wafer t that is prone to breakage, such as a semiconductor wafer t with a thickness of 30 μm or less, can be picked up satisfactorily. Furthermore, when the portion of the adhesive sheet 11 corresponding to the concave portion 66 is peeled from the semiconductor wafer t, the convex portion 64 and the convex portion 65 are separated from both sides of the concave portion 66 (both sides along the direction of the side of the semiconductor wafer t) ) The semiconductor wafer t is supported on three sides with the center side. Therefore, even if the force in the direction of peeling off from the semiconductor wafer t acts on the adhesive sheet 11, compared with the case where the force acts on the adhesive sheet 11 in the state where the support of the entire peripheral portion of the semiconductor wafer t is released In addition, the stress generated in the semiconductor wafer t can be particularly reduced.

另外,設置於矩形的第1上推體62a~第3上推體62c的上端部的凹部66的沿著圓周方向的長度,即沿著側邊部的方向的長度以變成0.4 mm以上、2.0 mm以下的方式形成。於凹部66的長度比0.4 mm短的情況下,即便使-85 kPa以下的負壓作用於凹部66內,於黏著片11中負壓發揮作用的面積亦變得過少,而難以良好地形成剝離部P。另一方面,於凹部66的長度比2.0 mm長的情況下,於黏著片11中負壓發揮作用的面積變得過大,當形成剝離部P時存在過度的應力施加至半導體晶片t上而產生破損之虞。藉由將凹部66的長度設為0.4 mm以上、2.0 mm以下,可確保半導體晶片t的支撐性,並確保黏著片11的剝離性。其結果,可抑制施加至半導體晶片t上的應力並良好地形成剝離部P,而可自黏著片11上迅速且良好地剝離半導體晶片t。In addition, the length of the concave portion 66 provided in the upper end portions of the rectangular first push-up body 62a to the third push-up body 62c in the circumferential direction, that is, the length in the direction along the side portion becomes 0.4 mm or more, 2.0 mm or less. When the length of the concave portion 66 is shorter than 0.4 mm, even if a negative pressure of -85 kPa or less is applied to the concave portion 66, the area where the negative pressure acts on the adhesive sheet 11 becomes too small, and it is difficult to form a good peeling Department P. On the other hand, when the length of the concave portion 66 is longer than 2.0 mm, the area where the negative pressure acts in the adhesive sheet 11 becomes too large, and excessive stress is applied to the semiconductor wafer t when the peeling portion P is formed. Risk of damage. By setting the length of the recess 66 to 0.4 mm or more and 2.0 mm or less, the supportability of the semiconductor wafer t can be ensured, and the peelability of the adhesive sheet 11 can be ensured. As a result, the stress applied to the semiconductor wafer t can be suppressed to form the peeling portion P satisfactorily, and the semiconductor wafer t can be peeled off from the adhesive sheet 11 quickly and satisfactorily.

另外,將設置於四邊形的第1上推體62a~第3上推體62c的上端部的凹部66的沿著圓周方向的長度,即沿著側邊部的方向的長度相對於凸部65中的沿著側邊部的方向的長度,設定成0.8倍以上且1.2倍以下。於比0.8倍小的情況下,相對於各上推體(62a~62c)的側邊部的長度,形成剝離部P的區域的比例變少。因此,於其後的藉由上推體62a、上推體62b、上推體62c的下降來剝離黏著片11時,成為剝離的起點的剝離部P小,剝離的進行拖延的概率變高。相反地,於比1.2倍大的情況下,相對於各上推體(62a~62c)的側邊部的長度,由凸部64、凸部65支撐的區域的比例變少。因此,當形成剝離部P時施加至半導體晶片t上的應力變大,半導體晶片t的破損的概率變高。另外,藉由以相互不同的位置關係形成凹部66A、凹部66B、凹部66C彼此,而防止剝離部P連續地形成至半導體晶片t的中央為止,並謀求施加至半導體晶片t上的應力的減輕。但是,若凹部66的長度超過1.2倍,則剝離部P容易順著鄰接的凹部66A、凹部66B及凹部66B、凹部66C而擴展至半導體晶片t的中央為止。於是,由相互不同地形成凹部66A、凹部66B、凹部66C彼此所產生的損害的抑制效果下降。因此,較佳為將凹部66設定成凸部65的0.8倍以上且1.2倍以下的長度。In addition, the length of the concave portion 66 provided in the upper end of the first pusher 62a to the third pusher 62c of the quadrangle along the circumferential direction, that is, the length in the direction along the side portion is relative to the convex portion 65 The length in the direction of the side portion is set to 0.8 times or more and 1.2 times or less. When it is smaller than 0.8 times, the ratio of the area where the peeling portion P is formed decreases with respect to the length of the side portion of each push-up body (62a to 62c). Therefore, when the adhesive sheet 11 is peeled by the lowering of the push-up body 62a, the push-up body 62b, and the push-up body 62c thereafter, the peeling portion P, which becomes the starting point of the peeling, is small, and the probability of delaying the peeling increases. Conversely, when it is larger than 1.2 times, the ratio of the area supported by the convex portion 64 and the convex portion 65 decreases with respect to the length of the side portions of the push-up bodies (62a to 62c). Therefore, when the peeling portion P is formed, the stress applied to the semiconductor wafer t becomes large, and the probability of breakage of the semiconductor wafer t becomes high. In addition, by forming the concave portion 66A, the concave portion 66B, and the concave portion 66C with each other in a different positional relationship, the peeling portion P is prevented from being continuously formed up to the center of the semiconductor wafer t, and the stress applied to the semiconductor wafer t is reduced. However, if the length of the concave portion 66 exceeds 1.2 times, the peeling portion P tends to spread to the center of the semiconductor wafer t along the adjacent concave portion 66A, concave portion 66B, concave portion 66B, and concave portion 66C. As a result, the effect of suppressing damage caused by mutually forming the concave portion 66A, the concave portion 66B, and the concave portion 66C decreases. Therefore, it is preferable to set the concave portion 66 to a length of 0.8 times or more and 1.2 times or less of the convex portion 65.

(其他實施形態) 再者,本發明並不限定於所述實施形態。例如,於所述封裝形態中,將上頂機構60的第1上推體62a~第4上推體62d的動作設為使第1上推體62a~第4上推體62d一同上升後,自位於外側的第1上推體62a起依次下降的例子,但並不限定於此。例如,亦能夠以越是位於內側的上推體變得越高的方式,使第1上推體62a~第4上推體62d進行上升動作。即,亦可使第1上推體62a~第4上推體62d僅一同上升規定高度後,使第2上推體62b~第4上推體62d進一步上升規定高度,其後使第3上推體62c~第4上推體62d進一步上升規定高度,最後使第4上推體62d進一步上升規定高度。總之,只要以多個上推體(62a~62d)依次與半導體晶片t分離的方式進行動作即可。(Other Embodiments) Furthermore, the present invention is not limited to the above embodiments. For example, in the above-mentioned package form, the operations of the first push-up body 62a to the fourth push-up body 62d of the jack-up mechanism 60 are set to raise the first push-up body 62a to the fourth push-up body 62d together. The example of descending sequentially from the first push-up body 62a located on the outer side is not limited to this. For example, the first push-up body 62a to the fourth push-up body 62d can be lifted so that the push-up body located inside becomes higher. That is, after the first push-up body 62a to the fourth push-up body 62d are raised together only by a predetermined height, the second push-up body 62b to the fourth push-up body 62d may be further raised by a predetermined height, and then the third push-up body 62d The pusher 62c to the fourth pusher 62d are further raised by a predetermined height, and finally the fourth pusher 62d is further raised by a predetermined height. In short, it suffices to operate so that the plurality of push-up bodies (62a to 62d) are sequentially separated from the semiconductor wafer t.

另外,於所述實施形態中,作為基板平台,以使基板K於XYθ方向上移動的基板平台20的例子進行了說明,但並不限定於此。例如,亦能夠以如下方式構成:沿著與供給裝置10及中間平台30的排列方向交叉的方向配置一對導軌,於該導軌上將基板K搬送定位至封裝機構50的封裝作業位置上。即,將基板K搬入封裝機構50的封裝作業位置上,並定位於封裝作業位置上,且從封裝作業位置上搬出的搬送部亦包含於基板平台中。In addition, in the above embodiment, the example of the substrate stage 20 in which the substrate K is moved in the XYθ direction has been described as the substrate stage, but it is not limited to this. For example, it may be configured such that a pair of guide rails are arranged in a direction crossing the arrangement direction of the supply device 10 and the intermediate stage 30, and the substrate K is transported and positioned to the packaging operation position of the packaging mechanism 50 on the guide rails. That is, the substrate K is carried into the packaging operation position of the packaging mechanism 50 and positioned at the packaging operation position, and the conveying part carried out from the packaging operation position is also included in the substrate platform.

(實施例與比較例) 繼而,對本發明的實施例與其評估結果進行敘述。(Examples and Comparative Examples) Next, examples and evaluation results of the present invention will be described.

利用所述實施形態的封裝裝置1,於以下的條件下進行拾取試驗。再者,利用封裝機構50將由拾取機構40所拾取的半導體晶片t配置於載置在基板平台20上的試驗用的玻璃基板上。先將具有黏著性的膜黏附於玻璃基板上,而使所配置的半導體晶片t於基板平台20的移動過程中不動。上頂機構使用圖3中所示的上頂機構60,並以圖5(A)~圖7(B)中所示的動作進行上頂。Using the packaging device 1 of the above embodiment, a pickup test was performed under the following conditions. Furthermore, the semiconductor wafer t picked up by the pickup mechanism 40 is placed on the test glass substrate placed on the substrate stage 20 by the packaging mechanism 50. First, an adhesive film is adhered to the glass substrate, so that the arranged semiconductor wafer t does not move during the movement of the substrate platform 20. As the jacking mechanism, the jacking mechanism 60 shown in FIG. 3 is used, and jacking is performed by the operations shown in FIGS. 5(A) to 7(B).

自直徑為300 mm的晶圓上拾取50個半導體晶片t,並測定於拾取時產生了破裂的半導體晶片t的數量。具體而言,於拾取前,確認於拾取對象的50個半導體晶片t中無破裂,並清點配置於玻璃基板上的50個半導體晶片t中存在幾個產生了破裂的半導體晶片t,藉此測定於拾取時產生了破裂的半導體晶片t的數量。Fifty semiconductor wafers t were picked from a wafer with a diameter of 300 mm, and the number of semiconductor wafers t that had broken during picking was measured. Specifically, before picking, it was confirmed that there were no cracks in the 50 semiconductor wafers t to be picked up, and several of the 50 semiconductor wafers t arranged on the glass substrate were cracked. The number of cracked semiconductor wafers t that occurred during pickup.

<試驗條件> ・半導體晶片的大小:3×4 mm ・半導體晶片的厚度:35 μm、25 μm、15 μm這三種 ・作用於上頂機構60與黏著片11之間的負壓的大小:-90 kPa、-88 kPa、-85 kPa、-83 kPa、-80 kPa這五個條件 ・上頂量:1 mm ※上頂量是使圖5(C)中所示的第1上推體62a~第4上推體62d上升的量。 ・待機時間:0.2秒<Test conditions> ・Semiconductor wafer size: 3×4 mm ・Semiconductor wafer thickness: three types: 35 μm, 25 μm, and 15 μm ・The size of the negative pressure acting between the jacking mechanism 60 and the adhesive sheet 11:- Five conditions: 90 kPa, -88 kPa, -85 kPa, -83 kPa, and -80 kPa. Top-up amount: 1 mm ※The top-up amount is the first push-up body 62a shown in Figure 5(C) ~ The amount by which the fourth pusher 62d rises.・Standby time: 0.2 seconds

(實施例1) 將所述試驗條件中的負壓的大小設為-90 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例2) 將所述試驗條件中的負壓的大小設為-90 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例3) 將所述試驗條件中的負壓的大小設為-90 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例4) 將所述試驗條件中的負壓的大小設為-88 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例5) 將所述試驗條件中的負壓的大小設為-88 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例6) 將所述試驗條件中的負壓的大小設為-88 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例7) 將所述試驗條件中的負壓的大小設為-85 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例8) 將所述試驗條件中的負壓的大小設為-85 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (實施例9) 將所述試驗條件中的負壓的大小設為-85 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。(Example 1) The negative pressure in the test conditions was set to -90 kPa, and a pick-up test was performed using a semiconductor wafer t with a thickness of 35 μm. The results are shown in Table 1. (Example 2) The negative pressure in the test conditions was set to -90 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 25 μm. The results are shown in Table 1. (Example 3) The negative pressure in the test conditions was set to -90 kPa, and a pick-up test was performed using a semiconductor wafer t with a thickness of 15 μm. The results are shown in Table 1. (Example 4) The magnitude of the negative pressure in the test conditions was set to -88 kPa, and a pick-up test was performed using a semiconductor wafer t with a thickness of 35 μm. The results are shown in Table 1. (Example 5) The negative pressure in the test conditions was set to -88 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 25 μm. The results are shown in Table 1. (Example 6) The negative pressure in the test conditions was set to -88 kPa, and a semiconductor wafer t with a thickness of 15 μm was used to perform a pickup test. The results are shown in Table 1. (Example 7) The magnitude of the negative pressure in the test conditions was set to -85 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 35 μm. The results are shown in Table 1. (Example 8) The negative pressure in the test conditions was set to -85 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 25 μm. The results are shown in Table 1. (Example 9) The negative pressure in the test conditions was set to -85 kPa, and a pick-up test was performed using a semiconductor wafer t with a thickness of 15 μm. The results are shown in Table 1.

(比較例1) 將所述試驗條件中的負壓的大小設為-83 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例2) 將所述試驗條件中的負壓的大小設為-83 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例3) 將所述試驗條件中的負壓的大小設為-83 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例4) 將所述試驗條件中的負壓的大小設為-80 kPa,並使用厚度為35 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例5) 將所述試驗條件中的負壓的大小設為-80 kPa,並使用厚度為25 μm的半導體晶片t進行拾取試驗。將結果示於表1中。 (比較例6) 將所述試驗條件中的負壓的大小設為-80 kPa,並使用厚度為15 μm的半導體晶片t進行拾取試驗。將結果示於表1中。(Comparative Example 1) The magnitude of the negative pressure in the test conditions was set to -83 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 35 μm. The results are shown in Table 1. (Comparative Example 2) The magnitude of the negative pressure in the test conditions was set to -83 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 25 μm. The results are shown in Table 1. (Comparative Example 3) The negative pressure in the test conditions was set to -83 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 15 μm. The results are shown in Table 1. (Comparative Example 4) The magnitude of the negative pressure in the test conditions was set to -80 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 35 μm. The results are shown in Table 1. (Comparative Example 5) The negative pressure in the test conditions was set to -80 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 25 μm. The results are shown in Table 1. (Comparative Example 6) The magnitude of the negative pressure in the test conditions was set to -80 kPa, and a pickup test was performed using a semiconductor wafer t with a thickness of 15 μm. The results are shown in Table 1.

[表1]

Figure 108119920-A0304-0001
[Table 1]
Figure 108119920-A0304-0001

以上,對本發明的實施形態及實施例、比較例進行了說明,但該些實施形態及實施例、比較例並不意圖限定發明的範圍。所述新的實施形態能夠以其他各種形態來實施,於不脫離發明的主旨的範圍內,可進行各種省略、替換、變更。該些實施形態或其變形包含於發明的範圍或主旨中,並且包含於專利申請的範圍中所記載的發明中。The embodiments, examples, and comparative examples of the present invention have been described above, but these embodiments, examples, and comparative examples are not intended to limit the scope of the invention. The new embodiment can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments or modifications are included in the scope or gist of the invention, and included in the invention described in the scope of the patent application.

1‧‧‧封裝裝置10‧‧‧供給裝置11‧‧‧黏著片11a‧‧‧傾斜的部分12‧‧‧晶圓環13‧‧‧晶圓台20‧‧‧基板平台30‧‧‧中間平台40‧‧‧拾取機構41‧‧‧吸附噴嘴50‧‧‧封裝機構51‧‧‧封裝工具60‧‧‧上頂機構/上頂裝置61‧‧‧支承體61a‧‧‧支承面61b‧‧‧內部空間61c‧‧‧抽吸槽61d‧‧‧抽吸孔61e‧‧‧連通槽61f‧‧‧開口部62‧‧‧上推機構62a‧‧‧第1上推體62b‧‧‧第2上推體62c‧‧‧第3上推體62d‧‧‧第4上推體62e‧‧‧升降驅動裝置62f‧‧‧升降驅動裝置62g‧‧‧升降驅動裝置62h‧‧‧升降驅動裝置63‧‧‧抽吸泵63a‧‧‧真空配管63b‧‧‧壓力控制裝置(負壓調整機構)63c‧‧‧開關閥63d‧‧‧壓力檢測器64、64A、64B、64C‧‧‧凸部65、65A、65B、65C‧‧‧凸部66、66A、66B、66C‧‧‧凹部70‧‧‧控制裝置71‧‧‧存儲部P‧‧‧剝離部K‧‧‧基板t‧‧‧半導體晶片W‧‧‧晶圓X、Y、Z、θ‧‧‧方向1‧‧‧Packaging device 10‧‧‧Supply device 11‧‧‧ Adhesive sheet 11a‧‧‧Slanted part 12‧‧‧ Wafer ring 13‧‧‧ Wafer table 20‧‧‧Substrate platform 30‧‧‧ Middle Platform 40 ‧ ‧ ‧ picking mechanism 41 ‧ ‧ ‧ suction nozzle 50 ‧ ‧ ‧ packaging mechanism 51 ‧ ‧ ‧ packaging tool 60 ‧ ‧ ‧ lifting mechanism / lifting device 61 ‧ ‧ ‧ support 61a ‧ ‧ ‧ support surface 61b ‧ ‧‧Internal space 61c‧‧‧Suction groove 61d‧‧‧Suction hole 61e‧‧‧Communication groove 61f‧‧‧Opening part 62‧‧‧Push mechanism 62a‧‧‧First push body 62b‧‧‧‧ 2nd pusher 62c‧‧‧3rd pusher 62d‧‧‧4th pusher 62e‧‧‧lift drive 62f‧‧‧lift drive 62g‧‧‧lift drive 62h‧‧‧lift drive Device 63‧‧‧Suction pump 63a‧‧‧Vacuum piping 63b‧Pressure control device (negative pressure adjustment mechanism) 63c‧‧‧Switch valve 63d‧‧‧Pressure detector 64, 64A, 64B, 64C‧‧‧ Convex part 65, 65A, 65B, 65C‧‧‧Convex part 66, 66A, 66B, 66C‧‧‧Concave part 70‧‧‧Control device 71‧‧‧Storage part P‧‧‧Peeling part K‧‧‧T ‧‧Semiconductor chip W‧‧‧wafer X, Y, Z, θ‧‧‧ direction

圖1是表示實施形態的半導體晶片的封裝裝置的概略構成的側面圖。 圖2是表示實施形態的半導體晶片的拾取裝置的上頂機構的立體圖。 圖3是表示圖2中所示的上頂機構的概略剖面圖。 圖4(A)及圖4(B)是表示圖3中所示的上推機構的上推體的平面圖。 圖5(A)至圖5(C)是表示實施形態的拾取裝置的動作的剖面圖。 圖6(A)至圖6(C)是表示實施形態的拾取裝置的動作的剖面圖。 圖7(A)及圖7(B)是表示實施形態的拾取裝置的動作的剖面圖。FIG. 1 is a side view showing a schematic configuration of a semiconductor wafer packaging device of an embodiment. FIG. 2 is a perspective view showing the jacking mechanism of the semiconductor wafer pick-up device of the embodiment. 3 is a schematic cross-sectional view showing the jacking mechanism shown in FIG. 2. 4(A) and 4(B) are plan views showing the push-up body of the push-up mechanism shown in FIG. 3. 5(A) to 5(C) are cross-sectional views showing the operation of the pickup device of the embodiment. 6(A) to 6(C) are cross-sectional views showing the operation of the pickup device of the embodiment. 7(A) and 7(B) are cross-sectional views showing the operation of the pickup device of the embodiment.

11:黏著片 11: Adhesive sheet

60:上頂機構 60: jacking mechanism

61:支承體 61: Support

61a:支承面 61a: bearing surface

61b:內部空間 61b: interior space

61f‧‧‧開口部 61f‧‧‧Opening

62‧‧‧上推機構 62‧‧‧Pushing mechanism

62a‧‧‧第1上推體 62a‧‧‧First push

62b‧‧‧第2上推體 62b‧‧‧2th push-up body

62c‧‧‧第3上推體 62c‧‧‧3rd pusher

62d‧‧‧第4上推體 62d‧‧‧4th push-up body

62e‧‧‧升降驅動裝置 62e‧‧‧Elevating drive device

62f‧‧‧升降驅動裝置 62f‧‧‧Elevating drive device

62g‧‧‧升降驅動裝置 62g‧‧‧Elevating drive device

62h‧‧‧升降驅動裝置 62h‧‧‧Elevating drive device

63‧‧‧抽吸泵 63‧‧‧Suction pump

63a‧‧‧真空配管 63a‧‧‧Vacuum piping

63b‧‧‧壓力控制裝置(負壓調整機構) 63b‧‧‧Pressure control device (negative pressure adjustment mechanism)

63c‧‧‧開關閥 63c‧‧‧ On-off valve

63d‧‧‧壓力檢測器 63d‧‧‧pressure detector

t‧‧‧半導體晶片 t‧‧‧Semiconductor chip

Claims (6)

一種半導體晶片的拾取裝置,其是將附著保持於黏著片上的半導體晶片自所述黏著片上拾取的半導體晶片的拾取裝置,其特徵在於:包括拾取機構,自所述黏著片上拾取所述半導體晶片;上頂機構,具有使軸心變成相同來配置且相互移動自如地設置於軸心方向上的多個上推體,自與所述半導體晶片相反側,使負壓作用於由所述拾取機構所拾取的所述半導體晶片於所述黏著片中所在的部分,當所述半導體晶片由所述拾取機構拾取時,藉由所述多個上推體來上頂所述半導體晶片;負壓源,對所述上頂機構穩定地供給以錶壓計-85kPa以下的負壓;壓力檢測器,檢測自所述負壓源供給至所述上頂機構的負壓的大小;以及負壓調整機構,將所述壓力檢測器的檢測值以錶壓計設定成-85kPa以下的規定的壓力的方式。 A pick-up device for semiconductor wafers is a pick-up device for picking up a semiconductor wafer attached to an adhesive sheet from the adhesive sheet, characterized in that it includes a pick-up mechanism to pick up the semiconductor wafer from the adhesive sheet; The jack-up mechanism has a plurality of push-up bodies that are arranged so that the shaft center is the same and are movably arranged in the shaft center direction, and the negative pressure acts on the pickup mechanism from the side opposite to the semiconductor wafer The portion of the semiconductor wafer picked up in the adhesive sheet, when the semiconductor wafer is picked up by the picking mechanism, the semiconductor wafer is pushed up by the plurality of push-up bodies; a negative pressure source, Negative pressure with a gauge pressure of -85 kPa or less is stably supplied to the jacking mechanism; a pressure detector detects the magnitude of the negative pressure supplied from the negative pressure source to the jacking mechanism; and a negative pressure adjustment mechanism, The detection value of the pressure detector is set to a predetermined pressure of -85 kPa or less with a gauge pressure gauge. 如申請專利範圍第1項所述的半導體晶片的拾取裝置,其中所述多個上推體具有配置於中央的角柱狀的上推體、及使軸心與所述角柱狀的上推體變成相同來配置的至少一個角筒狀的上推體。 The semiconductor wafer pick-up device according to item 1 of the patent application range, wherein the plurality of push-up bodies have a prismatic push-up body arranged in the center, and the axis and the prismatic push-up body become At least one angular tube-shaped push-up body configured in the same way. 如申請專利範圍第2項所述的半導體晶片的拾取裝置,其中所述角筒狀的上推體設置有多個,且使軸心變成相同來 多重地配置而成。 A semiconductor wafer pick-up device as described in item 2 of the patent application range, wherein a plurality of angular cylinder-shaped push-up bodies are provided, and the axis centers become the same Multiple configurations. 如申請專利範圍第2項或第3項所述的半導體晶片的拾取裝置,其中所述角筒狀的上推體是於其上端部沿著圓周方向交替地設置凸部與凹部而成。 The semiconductor wafer pick-up device according to claim 2 or claim 3, wherein the angular cylindrical push-up body is formed by alternately providing convex portions and concave portions at the upper end portion thereof along the circumferential direction. 如申請專利範圍第4項所述的半導體晶片的拾取裝置,其中相對於所述凸部的沿著所述圓周方向的長度,將所述凹部的沿著所述圓周方向的長度設定成0.8倍以上且1.2倍以下。 The pickup device for a semiconductor wafer according to item 4 of the patent application range, wherein the length of the concave portion in the circumferential direction is set to 0.8 times the length of the convex portion in the circumferential direction Above and below 1.2 times. 一種半導體晶片的封裝裝置,其特徵在於:包括供給裝置,對附著保持半導體晶片的黏著片進行保持;基板平台,載置基板;拾取裝置,自所述供給裝置所保持的所述黏著片上拾取所述半導體晶片;以及封裝機構,將由所述拾取裝置所取出的所述半導體晶片封裝於所述基板上;且所述拾取裝置為如申請專利範圍第1項至第5項中任一項所述的拾取裝置。 A semiconductor wafer packaging device, characterized in that it includes a supply device that holds an adhesive sheet attached to and holds a semiconductor wafer; a substrate platform on which a substrate is placed; a pickup device that picks up the adhesive sheet held by the supply device The semiconductor wafer; and a packaging mechanism that packages the semiconductor wafer taken out by the pickup device on the substrate; and the pickup device is as described in any one of claims 1 to 5 Picking device.
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