TWI683324B - 氧化物保護膜的製造方法、薄膜電晶體的製造方法、薄膜電晶體及電子元件 - Google Patents
氧化物保護膜的製造方法、薄膜電晶體的製造方法、薄膜電晶體及電子元件 Download PDFInfo
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- TWI683324B TWI683324B TW104142012A TW104142012A TWI683324B TW I683324 B TWI683324 B TW I683324B TW 104142012 A TW104142012 A TW 104142012A TW 104142012 A TW104142012 A TW 104142012A TW I683324 B TWI683324 B TW I683324B
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- protective film
- oxide
- oxide protective
- oxide semiconductor
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Classifications
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- H—ELECTRICITY
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015014626 | 2015-01-28 | ||
| JP2015-014626 | 2015-01-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201628023A TW201628023A (zh) | 2016-08-01 |
| TWI683324B true TWI683324B (zh) | 2020-01-21 |
Family
ID=56542865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104142012A TWI683324B (zh) | 2015-01-28 | 2015-12-15 | 氧化物保護膜的製造方法、薄膜電晶體的製造方法、薄膜電晶體及電子元件 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6246952B2 (fr) |
| KR (1) | KR20170093912A (fr) |
| TW (1) | TWI683324B (fr) |
| WO (1) | WO2016121230A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6852296B2 (ja) * | 2016-07-19 | 2021-03-31 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
| WO2019044998A1 (fr) * | 2017-09-01 | 2019-03-07 | 富士フイルム株式会社 | Film précurseur, procédé de fabrication de film conducteur double face, et capteur de panneau tactile |
| JP2019165040A (ja) * | 2018-03-19 | 2019-09-26 | 株式会社リコー | 酸化インジウムを含む膜の製造方法、及び電界効果型トランジスタの製造方法 |
| CN111180309A (zh) * | 2018-11-12 | 2020-05-19 | 广东聚华印刷显示技术有限公司 | 氧化物半导体薄膜及其制备方法、薄膜晶体管的制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090173938A1 (en) * | 2007-12-26 | 2009-07-09 | Konica Minolta Holdings, Inc. | Metal oxide semiconductor, semiconductor element, thin film transistor and method of manufacturing thereof |
| WO2011068033A1 (fr) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteur et procédé de fabrication associé |
| US20130320339A1 (en) * | 2011-02-28 | 2013-12-05 | Panasonic Liquid Crystal Display Co., Ltd. | Thin-film semiconductor device and method for manufacturing the same |
| WO2014136636A1 (fr) * | 2013-03-06 | 2014-09-12 | 住友化学株式会社 | Transistor en couches minces |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5288142B2 (ja) * | 2008-06-06 | 2013-09-11 | 出光興産株式会社 | 酸化物薄膜用スパッタリングターゲットおよびその製造法 |
| JP5700291B2 (ja) * | 2011-03-24 | 2015-04-15 | 凸版印刷株式会社 | 薄膜トランジスタとその製造方法、および当該薄膜トランジスタを用いた画像表示装置 |
| JP6028961B2 (ja) * | 2012-03-22 | 2016-11-24 | 国立研究開発法人産業技術総合研究所 | トランジスタ用酸化物半導体膜の製造方法 |
| JP5972065B2 (ja) * | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| JP6015389B2 (ja) * | 2012-11-30 | 2016-10-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
-
2015
- 2015-12-04 KR KR1020177018673A patent/KR20170093912A/ko not_active Ceased
- 2015-12-04 JP JP2016571794A patent/JP6246952B2/ja not_active Expired - Fee Related
- 2015-12-04 WO PCT/JP2015/084179 patent/WO2016121230A1/fr not_active Ceased
- 2015-12-15 TW TW104142012A patent/TWI683324B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090173938A1 (en) * | 2007-12-26 | 2009-07-09 | Konica Minolta Holdings, Inc. | Metal oxide semiconductor, semiconductor element, thin film transistor and method of manufacturing thereof |
| WO2011068033A1 (fr) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteur et procédé de fabrication associé |
| US20130320339A1 (en) * | 2011-02-28 | 2013-12-05 | Panasonic Liquid Crystal Display Co., Ltd. | Thin-film semiconductor device and method for manufacturing the same |
| WO2014136636A1 (fr) * | 2013-03-06 | 2014-09-12 | 住友化学株式会社 | Transistor en couches minces |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170093912A (ko) | 2017-08-16 |
| JP6246952B2 (ja) | 2017-12-13 |
| TW201628023A (zh) | 2016-08-01 |
| JPWO2016121230A1 (ja) | 2017-07-13 |
| WO2016121230A1 (fr) | 2016-08-04 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |