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TWI680515B - 單一氧化物金屬沉積腔室 - Google Patents

單一氧化物金屬沉積腔室 Download PDF

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Publication number
TWI680515B
TWI680515B TW106128534A TW106128534A TWI680515B TW I680515 B TWI680515 B TW I680515B TW 106128534 A TW106128534 A TW 106128534A TW 106128534 A TW106128534 A TW 106128534A TW I680515 B TWI680515 B TW I680515B
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Taiwan
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distribution plate
gas distribution
chamber
disposed
substrate support
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TW106128534A
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TW201812927A (zh
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安納薩Ｋ 沙布藍尼
Anantha K. Subramani
帕布朗 古柏羅吉
Praburam Gopalraja
則敬 龔
Tza-Jing Gung
哈利Ｋ 波奈康提
Hari K. Ponnekanti
菲利浦亞倫 克勞司
Philip Allan Kraus
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美商應用材料股份有限公司
Applied Materials, Inc.
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Abstract

於此所描述實施例一般相關於處理腔室中的金屬氧化物沉積。更特定地，於此所揭露實施例相關於組合的化學氣相沉積及物理氣相沉積腔室。使用單一氧化物金屬沉積腔室，能夠執行CVD及PVD兩者以有利地減低均勻半導體處理之成本。此外，單一氧化物金屬沉積系統減低沉積半導體基板所必要之時間，且減低處理半導體基板所需要之足跡。在一個實施例中，處理腔室包含設置於腔室主體中的氣體分配平板、設置於腔室主體中的一個或更多個金屬靶及設置於氣體分配平板及一個或更多個靶下方的基板支撐件。

Description

單一氧化物金屬沉積腔室
於此所描述實施例一般相關於處理腔室中的金屬氧化物沉積。更特定地，於此所揭露實施例相關於執行化學氣相沉積及物理氣相沉積兩者之腔室。
在積體電路製造中，使用沉積處理例如化學氣相沉積(CVD)或物理氣相沉積(PVD)以沉積多種材料之薄膜於半導體基板上。此等沉積通常在分開的封閉處理腔室中進行。
使用處理氣體以在CVD腔室中沉積薄膜於基板上。可供應處理氣體至置於基板支撐件上的基板。可提供沖洗氣體以移除處理氣體。可使用離開處理區域設置的通用排氣自處理腔室移除處理氣體及沖洗氣體(例如，繞著處理腔室的外周長)以防止處理區域中沖洗氣體與處理氣體的混合。
PVD處理包含使用在電漿區域中產生的離子噴濺包括來源材料的靶，造成噴出的來源材料前進至靶。噴出的來源材料可經由基板上形成的負電壓或偏壓加速朝向基板。一些PVD處理腔室提供RF能量至靶以增加均勻性。
兩個處理腔室運用非常不同的處理條件以用於沉積。CVD處理以遠高於PVD處理的溫度操作且需要使用專門的前驅物。為了沉積多層的氧化物及金屬至基板上，基板由一個腔室傳輸至下一個腔室，接著再次返回。使用上述安置，自一個系統轉換至下一個系統期間，污染物及其他雜質可沉積於基板上，特別是當試著沉積交替的氧化物及金屬層時，造成半導體薄膜中的非均勻性。
因此，具有針對用於沉積氧化物及金屬於基板上的改良系統及方法的需求。
於此所描述實施例一般相關於處理腔室中的金屬氧化物沉積。更特定地，於此所揭露實施例相關於組合的化學氣相沉積及物理氣相沉積腔室。
在一個實施例中，揭露一種沉積腔室。沉積腔室包含氣體分配平板，氣體分配平板設置於腔室主體中；一個或更多個金屬靶，一個或更多個金屬靶設置於腔室主體中；及基板支撐件，基板支撐件鑒於氣體分配平板或鑒於一個或更多個靶選擇性地設置。
在另一實施例中，沉積腔室包含氣體分配平板，氣體分配平板設置於腔室主體的中央部分中；複數個靶，複數個靶設置於腔室主體的周邊部分中；可移動基板支撐件，可移動基板支撐件設置於氣體分配平板下方；及一個或更多個準直器，一個或更多個準直器可設置於基板支撐件及一個或更多個靶之間。
在另一實施例中，揭露一種沉積方法。沉積方法包含以下步驟：在可旋轉基板支撐件上放置基板；升高基板支撐件相鄰於氣體分配平板，氣體分配平板設置於腔室主體中；及流動沉積前驅物(precursor)進入第一處理容積。第一處理容積設置於氣體分配平板及可旋轉基板支撐件之間。此方法也包含以下步驟：沉積第一層於基板上；鑒於一個或更多個靶自第一處理容積降低基板支撐件至第二處理容積；旋轉基板支撐件，同時自沿圓周繞著氣體分配平板設置的一個或更多個靶噴濺一種或更多種金屬，且沉積第二層於第一層上。
於此所描述實施例一般相關於處理腔室中的金屬氧化物沉積。更特定地，於此所揭露實施例相關於組合的化學氣相沉積及物理氣相沉積腔室。
第1A圖為根據本揭示案的一個實施例的化學處理期間處理腔室100之截面視圖，具有處於升高位置117的基板支撐件120。第1B圖為根據本揭示案的一個實施例的物理沉積處理期間處理腔室100之截面視圖，具有處於降低位置118的基板支撐件120。第1A圖及第1B圖之截面視圖展示主要部件，如下方更詳細之描述。
處理腔室100包含基板支撐件120以支撐基板50、具有一個或更多個側壁104的腔室主體102、底部106、蓋108及一個或更多個周邊腔室延伸110。側壁104、底部106、一個或更多個周邊腔室延伸110及蓋108界定處理腔室100的內部容積112。在一個實施例中，一個或更多個周邊腔室延伸110包含相鄰於蓋108的第一具角度表面114、相鄰於第一具角度表面114的第二具角度表面116及相鄰於第二具角度表面116及一個或更多個側壁104兩者的第三具角度表面130。第一具角度表面114可包含用於噴濺源例如靶138的開口以供插入。換句話說，靶138可在一個或更多個周邊腔室延伸110的第一具角度表面114中接合至腔室主體102。
處理腔室100包含基板支撐件120上方的氣體分配平板124。在一個實施例中，氣體分配平板124可設置於腔室100的第一部分132中。在一個實施例中，氣體分配平板124設置於腔室100的中央部分中。第一部分132可由自蓋108延伸的柱134界定。在一個實施例中，柱134可自氣體分配平板124延伸。第一部分132可位於腔室主體102中央。在一個實施例中，柱134可為圓形。然而，柱134可為任何其他幾何形狀例如正方形、六角形、橢圓形等。處於升高位置117(第1A圖)的基板支撐件120及氣體分配平板124之間的區域由處理容積122來界定。氣體分配平板124自處理氣體源126供應處理氣體至處理容積122。處理腔室100可為電漿腔室，例如包含電漿源的腔室(例如，具有RF熱氣體分配平板的電容性耦合電漿腔室)或連接至遠端電漿源(RPS)的腔室。
基板支撐件120可由陶瓷材料形成，例如氮化鋁。基板支撐件120可包含靜電夾具、陶瓷主體、加熱器、真空夾具、承受器或上述之組合。基板支撐件120具有基板支撐表面以在處理期間接收及支撐基板50。基板支撐件120耦合至支撐軸件121，支撐軸件121耦合至處理腔室100的底部106下方的升降機構115。可繞著支撐軸件121的處理腔室的底部106之下方部分來設置伸縮套管128，以將支撐軸件121與外部環境隔絕。升降機構115可由電源154供電。升降機構115經配置以在垂直方向上於升高位置117(見第1A圖)及降低位置118(見第1B圖)之間移動基板支撐件120。在一個實施例中，基板支撐件120在垂直方向上可移動且繞著軸150可旋轉。基板支撐件120可放置於升高位置117以用於化學氣相沉積(CVD)基板50的處理，且可放置於降低位置118以用於物理氣相沉積(PVD)基板50的處理。用於CVD處理的升高位置117中的壓力可小於15托(Torr)，最佳為2至10托。用於PVD處理的降低位置118中的壓力可小於2托，最佳為0.1毫托至1托。
可選地，支撐軸件121可耦合至密封平板136。密封平板136可有利地在氣體沉積於基板50上期間密封第一部分132。第一部分132也可包含沖洗氣體系統。沖洗氣體系統可包含清潔源146，清潔源146在處理或清潔處理腔室100的第一部分132期間供應沖洗氣體至處理腔室100。沖洗氣體可為氧氣或惰性氣體，例如氮或氬。沖洗氣體幫助防止來自氣體分配平板124的處理氣體進入內部容積112的部分。此外，沖洗氣體的流動可防止自由基對基板支撐件120的損壞。防止密封平板136下方的處理氣體避免了不必要的清潔及污染。因此，使用沖洗氣體減低整體的清潔時間，增加腔室部件的使用壽命，且增加處理腔室100的生產量。
腔室100包含一個或更多個靶138及電源140。在一個實施例中，電源140可為射頻(RF)電源。一個或更多個靶138可藉由接地傳導性適應器經由介電隔絕器(未展示)來支撐。一個或更多個靶138包括當基板支撐件120處於降低位置118時(如第1B圖中所見)噴濺期間欲沉積於基板50表面上的材料。一個或更多個靶138可設置於腔室100的周邊部分中。
在降低位置118中，一個或更多個靶138可在第二處理容積148內噴濺至基板50上。第二處理容積148設置於第一處理容積122下方於基板支撐件120及一個或更多個靶138之間。在一個實施例中，第一靶138a可包括一種金屬，同時第二靶138b可包括不同金屬，使得基板上的沉積提供此等金屬之合金。在另一實施例中，第一靶138a及第二靶138b可包括相同材料。藉由具有使用相同材料的多個靶來改良沉積率。一個或更多個靶138可包含銅以沉積種晶層(seed layer)，種晶層在基板50中形成具有高的長寬比特徵。一個或更多個靶138可為環狀以進一步改良沉積率且消除對旋轉台座的需求。
在一個實施例中，放置磁控管156於靶138上方。磁控管156可包含由底板支撐的複數個磁鐵，此底板連接至可軸向與靶138的中央軸對齊的軸件。磁鐵產生腔室100內靠近靶138前面的磁場以產生電漿，使得顯著大量的離子打擊靶138而造成靶材料的噴濺發射。磁鐵可繞著靶138旋轉以增加跨靶138表面的磁場之均勻性。
在一個實施例中，腔室100包含腔室主體102內接地的屏蔽142。屏蔽142包括自鋁、銅及不鏽鋼選擇的材料。在一個實施例中，屏蔽的長(L)為直徑(D)的兩倍或處於2:1的L/D比率。在另一實施例中，屏蔽的長為直徑的三倍或處於3:1的L/D比率。屏蔽142可有利地防止電漿穿透及噴濺塗佈柱134。此外，可自柱134以銳角設置屏蔽142，以便當基板支撐件處於降低位置118時幫助引導噴濺材料以角度形式朝向基板50。在一個實施例中，當一個或更多個靶138噴濺材料至基板50上時基板支撐件120繞著軸150旋轉，以有利地均勻地沉積材料於基板50上。在一個實施例中，可藉由放置準直器152於一個或更多個靶138及基板支撐件120之間來達成方向性噴濺。準直器152可機械地及電性地耦合至屏蔽142及第三具角度表面130。在一個實施例中，準直器152可在腔室100內電性地浮接。在一個實施例中，準直器152耦合至電性的電源。在一個實施例中，準直器152為蜂巢結構，具有六角形壁以緊密封裝安置分隔六角形孔隙。在一個實施例中，準直器152包括自鋁、銅及不鏽鋼選擇的材料。準直器152有利地作用如同濾波器以捕捉由一個或更多個靶138以超過選擇的角度之角度所發射的離子及中子，靠近正交於基板50。準直器152可包含RF線圈。
在一個實施例中，自柱134以小於90度的銳角設置一個或更多個屏蔽142。一個或更多個屏蔽142及第三具角度表面130部分界定腔室100的第二部分144。一個或更多個靶138設置於腔室100的第二部分144中。第二部分144相鄰於第一部分132。在一個實施例中，第二部分144設置於腔室100的周邊中。一個或更多個屏蔽142設置於一個或更多個靶138及氣體分配平板124之間。在一個實施例中，一個或更多個屏蔽142部分地界定腔室100的周邊部分且部分地界定腔室100的中央部分。可沿圓周繞著氣體分配平板124設置腔室100的周邊部分。
第2圖為根據本揭示案的一個實施例的用於在處理腔室中沉積的方法200之流程圖。在針對腔室100的金屬氧化物沉積處理期間，在第2圖的操作210處，放置基板50於可旋轉基板支撐件120上。基板50可經由電性夾具(未展示)電性地耦合至基板支撐件120。在操作220處，升高基板支撐件120相鄰於氣體分配平板124。氣體分配平板124設置於腔室主體102中。更特定地，氣體分配平板124設置於位於腔室100中央的第一部分132內。在操作230處，前驅物流體流入第一處理容積122。第一處理容積122設置於氣體分配平板124及可旋轉基板支撐件120之間。沉積期間在第一處理容積122內，基板支撐件可為靜止。
前驅物流體可為沉積第一層於基板50上的處理氣體。在一個實施例中，處理氣體流動了5至25秒。在一個實施例中，第一層為氧化物。在一個實施例中，處理氣體為含鹵素氣體，例如NF3 。在一個實施例中，氣體分配平板124為噴淋頭。一旦沉積完成，可排空相鄰於第一處理容積122的區域及基板支撐件下方的區域。在一個實施例中，可供應沖洗氣體至第一處理容積122。沖洗氣體可為氧或惰性氣體，例如氮或氬。沖洗氣體幫助防止來自氣體分配平板124的處理氣體進入內部容積112的部分。
在操作240處，基板支撐件120在垂直方向上自第一處理容積122降低至第二處理容積148。第二處理容積148設置於第一處理容積122下方。第二處理容積148設置於基板支撐件120及一個或更多個靶138之間。在操作250處，基板支撐件可繞著軸150旋轉，同時噴濺一個或更多個靶138。沿圓周繞著氣體分配平板124設置一個或更多個靶138。第二層沉積於第一層上。第二層可為金屬或金屬合金。在一個實施例中，第一靶138a可噴濺一種金屬，同時第二靶138b噴濺不同金屬。在一個實施例中，第一靶138a噴濺與第二靶138b相同的金屬。在一個實施例中，一個或更多個靶138噴濺相同的金屬。在另一實施例中，一個或更多個靶138噴濺不同的金屬。
一旦噴濺完成，可重複操作220至250。換句話說，基板支撐件120可升高進入腔室100的第一部分132以經由CVD處理來沉積氧化物，接著基板支撐件120可降低進入內部容積112以經由PVD處理來沉積金屬。可重複氧化物層及金屬層沉積約80至100次，使得80至100層交替的氧化物及金屬沉積於基板50上。
於此揭露之實施例相關於單一氧化物金屬沉積腔室，能夠執行CVD及PVD兩者以減低均勻半導體處理之成本。此外，單一氧化物金屬沉積系統減低沉積於半導體基板上所必要之時間。
儘管前述係本揭示案之實施例，可修改本揭示案的其他及進一步的實施例而不背離其基本範疇，且此範疇由隨後的申請專利範圍所決定。
50‧‧‧基板
100‧‧‧腔室
102‧‧‧腔室主體
104‧‧‧側壁
108‧‧‧蓋
110‧‧‧周邊腔室延伸
112‧‧‧內部容積
114‧‧‧第一具角度表面
115‧‧‧升降機構
116‧‧‧第二具角度表面
117‧‧‧升高位置
118‧‧‧降低位置
120‧‧‧基板支撐件
121‧‧‧支撐軸件
122‧‧‧處理容積
124‧‧‧氣體分配平板
126‧‧‧處理氣體源
128‧‧‧伸縮套管
130‧‧‧第三具角度表面
132‧‧‧第一部分
134‧‧‧柱
136‧‧‧密封平板
138a‧‧‧第一靶
138b‧‧‧第二靶
140‧‧‧電源
142‧‧‧屏蔽
144‧‧‧第二部分
146‧‧‧清潔源
148‧‧‧第二處理容積
150‧‧‧軸
152‧‧‧準直器
154‧‧‧電源
156‧‧‧磁控管
200‧‧‧方法
210‧‧‧操作
220‧‧‧操作
230‧‧‧操作
240‧‧‧操作
250‧‧‧操作
於是可以詳細理解本揭示案上述特徵中的方式，可藉由參考實施例而具有本揭示案的更特定描述(簡短總結如上)，其中一些圖示於所附圖式中。然而，注意所附圖式僅圖示本揭示案典型的實施例，因此不考慮限制其範疇，因為本揭示案可允許其他等效實施例。
第1A圖為根據本揭示案的一個實施例的化學處理期間處理腔室之截面視圖，具有處於升高位置的基板。
第1B圖為根據本揭示案的一個實施例的電漿處理期間處理腔室之截面視圖，具有處於降低位置的基板。
第2圖為根據本揭示案的一個實施例的用於在處理腔室中沉積的方法之流程圖。
為了便於理解，儘可能使用相同元件符號，以標示圖式中共有的相同元件。思量揭露於一個實施例中的元件可有利地使用於其他實施例，而無須特定敘述。
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Claims (18)

  1. 一種沉積腔室，包括：一氣體分配平板，該氣體分配平板設置於一腔室主體中；一個或更多個金屬靶，該一個或更多個金屬靶設置於該腔室主體中；及一基板支撐件，該基板支撐件設置於該氣體分配平板或該一個或更多個金屬靶下方；其中該氣體分配平板設置於該腔室主體的一第一部分中，其中該一個或更多個金屬靶設置於該腔室主體的一第二部分中，且其中該腔室主體的該第二部分環繞該腔室主體的該第一部分。
  2. 如請求項1所述之沉積腔室，進一步包括一個或更多個屏蔽，該一個或更多個屏蔽設置於該氣體分配平板及該一個或更多個金屬靶之間。
  3. 如請求項2所述之沉積腔室，其中該第一部分由自該氣體分配平板延伸的一柱來界定。
  4. 如請求項3所述之沉積腔室，其中該一個或更多個屏蔽設置相鄰於該柱且自該柱呈小於90度的一銳角。
  5. 如請求項2所述之沉積腔室，其中該基板支撐件在垂直方向上可移動。
  6. 一種沉積腔室，包括：一氣體分配平板，該氣體分配平板設置於一腔室主體的一中央部分中；複數個靶，該複數個靶設置於該腔室主體的一周邊部分中；一可移動基板支撐件，該可移動基板支撐件設置於該氣體分配平板下方；及一個或更多個屏蔽，該一個或更多個屏蔽設置於該氣體分配平板及該一個或更多個靶之間。
  7. 如請求項6所述之沉積腔室，進一步包括一柱，該柱自該氣體分配平板延伸而部分地界定該腔室主體的該中央部分。
  8. 如請求項7所述之沉積腔室，其中設置該一個或更多個屏蔽以自該柱呈小於90度的一銳角。
  9. 如請求項6所述之沉積腔室，其中該一個或更多個屏蔽部分地界定該腔室主體的該中央部分及該腔室主體的該周邊部分。
  10. 如請求項6所述之沉積腔室，進一步包括一第一處理容積，該第一處理容積設置於該氣體分配平板及該基板支撐件之間。
  11. 如請求項10所述之沉積腔室，進一步包括多個處理容積，該多個處理容積設置於該基板支撐件及該一個或更多個靶之間。
  12. 如請求項6所述之沉積腔室，其中沿圓周繞著該氣體分配平板設置該腔室主體的該周邊部分。
  13. 如請求項6所述之沉積腔室，其中該基板支撐件在垂直方向上可移動且可繞著一軸旋轉。
  14. 一種沉積方法，包括以下步驟：a)在一可旋轉基板支撐件上放置一基板；b)升高該基板支撐件相鄰於一氣體分配平板，該氣體分配平板設置於一腔室主體中；c)流動一前驅物(precursor)進入一第一處理容積，其中該第一處理容積設置於該氣體分配平板及該可旋轉基板支撐件之間且沉積一第一層於該基板上；d)自該第一處理容積降低該基板支撐件至一第二處理容積；及e)旋轉該基板支撐件，同時自沿圓周繞著該氣體分配平板設置的一個或更多個金屬靶噴濺一種或更多種金屬且沉積一第二層於該第一層上。
  15. 如請求項14所述之方法，其中該第一層為一氧化物。
  16. 如請求項14所述之方法，進一步包括以下步驟：排空該第一處理容積。
  17. 如請求項14所述之方法，進一步包括以下步驟：重複步驟b)至e)。
  18. 如請求項14所述之方法，其中該第二層為一金屬。
TW106128534A 2016-09-13 2017-08-23 單一氧化物金屬沉積腔室 TWI680515B (zh)

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JP2004190082A (ja) * 2002-12-10 2004-07-08 Kobe Steel Ltd Ｐｖｄ・ｃｖｄ両用成膜装置及び当該装置を用いた成膜方法
JP2005036276A (ja) * 2003-07-18 2005-02-10 Kawasaki Heavy Ind Ltd 複合構造薄膜製造方法及び装置

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