TWI680195B - Method for producing metal particle - Google Patents
Method for producing metal particle Download PDFInfo
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- TWI680195B TWI680195B TW107140063A TW107140063A TWI680195B TW I680195 B TWI680195 B TW I680195B TW 107140063 A TW107140063 A TW 107140063A TW 107140063 A TW107140063 A TW 107140063A TW I680195 B TWI680195 B TW I680195B
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- 239000002923 metal particle Substances 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 239000007769 metal material Substances 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000011573 trace mineral Substances 0.000 claims abstract description 30
- 235000013619 trace mineral Nutrition 0.000 claims abstract description 30
- 238000004458 analytical method Methods 0.000 claims abstract description 16
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 16
- 239000010432 diamond Substances 0.000 claims abstract description 16
- 238000001036 glow-discharge mass spectrometry Methods 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 abstract description 57
- 239000010949 copper Substances 0.000 description 41
- 239000011261 inert gas Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910016347 CuSn Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2201/00—Treatment under specific atmosphere
- B22F2201/03—Oxygen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/10—Copper
Landscapes
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
Abstract
本發明之課題在於提供一種藉由UDS法以高量產性製造具有較高真球度之Cu粒子之方法。 An object of the present invention is to provide a method for producing Cu particles with high true sphericity by UDS method with high mass productivity.
本發明係一種製造球狀金屬粒子之方法,該方法包括:步驟a,其係將包含Cu與微量元素、藉由GDMS分析所得之Cu之質量比例超過99.995%且微量元素包含Si、Al或Ca中之1種以上之金屬材料,於坩鍋17內熔融,製作熔融金屬材料;步驟b,其係於坩鍋內施加0.05MPa以上且1.0MPa以下之壓力,自中心軸配置於鉛直方向且直徑為5μm以上且1000μm以下之流孔12a滴下熔融金屬材料,製作熔融金屬液滴1;及步驟c,其係使熔融金屬液滴於氧濃度以體積比例計為1000ppm以下之環境下急冷凝固;且流孔12a設置於以人工單晶金剛石形成之流孔板12。 The present invention is a method for manufacturing spherical metal particles. The method includes: Step a, which comprises Cu and trace elements, the mass ratio of Cu obtained by GDMS analysis exceeds 99.995%, and the trace elements include Si, Al or Ca One or more of the metal materials are melted in the crucible 17 to produce a molten metal material; step b, which applies a pressure of 0.05 MPa to 1.0 MPa in the crucible, and is arranged in the vertical direction and the diameter from the central axis The molten metal material is dripped from the orifice 12a of 5 μm or more and 1000 μm or less to prepare molten metal droplets 1; and step c, which is to rapidly condense the molten metal droplets in an environment where the oxygen concentration is 1000 ppm or less by volume; The orifice 12a is provided in the orifice plate 12 formed of artificial single crystal diamond.
Description
本發明係關於一種金屬粒子之製造方法,特別是關於一種製造球狀金屬粒子之方法。 The present invention relates to a method for manufacturing metal particles, and more particularly, to a method for manufacturing spherical metal particles.
近年來,球柵陣列(BGA)等高密度封裝及疊合式封裝(POP)、多晶片模組(MCM)等三維高密度封裝逐步發展,同時,連接端子之小型化逐步發展,從而要求提高以Cu球為核心之焊料被覆Cu球之小徑化及真球度。 In recent years, high-density packaging such as ball grid array (BGA) and three-dimensional high-density packaging such as stacked package (POP) and multi-chip module (MCM) have gradually developed. The diameter reduction and true sphericity of the solder-coated Cu balls with Cu balls as the core.
本申請人開發了一種適於製造適於用作焊料被覆Cu球之核心之球狀銅粒子的均勻液滴噴霧法(Uniform Droplet Spray Process,以下稱為「UDS法」)(專利文獻1、2)。該UDS法藉由對熔融金屬材料賦予壓力與振動,使連續滴下之熔融金屬液滴急冷凝固,能夠一面穩定地抑制粒徑之偏差,一面製造具有較高真球度之金屬粒子。 The applicant has developed a Uniform Droplet Spray Process (hereinafter referred to as "UDS method") suitable for producing spherical copper particles suitable for use as the core of solder-coated Cu balls (Patent Documents 1, 2 ). The UDS method applies pressure and vibration to a molten metal material to rapidly condense molten metal droplets that are continuously dropped, and can stably suppress deviations in particle size while producing metal particles with high true sphericity.
進而,本申請人發現:包含Cu(銅)與微量元素,藉由輝光放電質譜分析(Glow Discharge Mass Spectrometry,以下稱為「GDMS分析」)所得之Cu之質量比例超過99.995%,微量元素中P(磷)與S(硫)之質量比例合計為3ppm以上且30ppm以下之Cu粒子(銅粒子)具有較高之真球度及適當之維氏硬度,且能夠藉由USD法製造(專利文獻 3)。專利文獻3中記載之Cu粒子之製造方法具有無需進行例如專利文獻4中記載之製造包含微量元素(Pb及Bi)之具有較高真球度之Cu粒子之方法中所必需之退火處理之優點。 Furthermore, the applicant has found that the mass ratio of Cu obtained by Glow Discharge Mass Spectrometry (hereinafter referred to as "GDMS analysis") containing Cu (copper) and trace elements exceeds 99.995%, and P in trace elements Cu particles (copper particles) with a mass ratio of (phosphorus) and S (sulfur) of 3 ppm or more and 30 ppm or less have high sphericity and appropriate Vickers hardness, and can be manufactured by the USD method (Patent Literature 3). The method for producing Cu particles described in Patent Document 3 has the advantage that the annealing process required in the method for producing Cu particles with high true sphericity including trace elements (Pb and Bi) described in Patent Document 4 is not necessary. .
[專利文獻1]日本專利第4159012號公報 [Patent Document 1] Japanese Patent No. 4159012
[專利文獻2]日本專利第5590501號公報 [Patent Document 2] Japanese Patent No. 5905501
[專利文獻3]日本專利第6256616號公報 [Patent Document 3] Japanese Patent No. 6256616
[專利文獻4]日本專利第5585751號公報 [Patent Document 4] Japanese Patent No. 5585751
藉由上述UDS法,可製造具有較高真球度之金屬粒子。然而,根據本發明者之研究,採用UDS法之金屬粒子之製造方法中,無法獲得足夠之量產性。 With the UDS method described above, metal particles with higher true sphericity can be manufactured. However, according to the study by the present inventors, in the method for producing metal particles using the UDS method, sufficient mass productivity cannot be obtained.
本發明係為解決上述課題而成者,其目的在於提供一種藉由UDS法以高量產性製造具有較高真球度之Cu粒子之方法。 The present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a method for producing Cu particles having a high true sphericity by a UDS method with high mass productivity.
本發明之某實施形態之金屬粒子之製造方法係製造球狀金屬粒子之方法,其包括如下步驟:步驟a,其係將包含Cu與微量元素、藉由GDMS分析所得之Cu之質量比例超過99.995%且上述微量元素包含Si、Al或Ca中之1種以上之金屬材料,於坩鍋內熔融,製作熔融金屬材料;步驟b,其係於上述坩鍋內施加0.05MPa以上且1.0MPa以下之壓力,自中心軸配置於鉛直方向且直徑為5μm以上且1000 μm以下之流孔滴下上述熔融金屬材料,製作熔融金屬液滴;及步驟c,其係使上述熔融金屬液滴於氧濃度以體積比例計為1000ppm以下之環境下急冷凝固;且,上述流孔設置於以人工單晶金剛石形成之流孔板。上述流孔板可作為另一構件安裝於上述坩鍋之底部,亦可與上述坩鍋一體形成。 A method for manufacturing metal particles according to an embodiment of the present invention is a method for manufacturing spherical metal particles, which includes the following steps: Step a, which includes Cu and trace elements, and the mass ratio of Cu obtained by GDMS analysis exceeds 99.995 % And the above-mentioned trace elements contain one or more metal materials of Si, Al, or Ca, and are melted in the crucible to make a molten metal material; step b, which is to apply 0.05 MPa to 1.0 MPa in the crucible Pressure from the central axis in the vertical direction and the diameter is 5 μm or more and 1000 The molten metal material is dripped in a flow hole below μm to produce molten metal droplets; and step c, the molten metal liquid droplet is rapidly condensed and solidified in an environment where the oxygen concentration is 1000 ppm or less by volume; and the flow hole It is set in a orifice plate made of artificial single crystal diamond. The orifice plate may be mounted on the bottom of the crucible as another component, or may be formed integrally with the crucible.
某實施形態中,上述微量元素包含以質量比例計為0.16ppm以上之Si、0.10ppm以上之Al或0.04ppm以上之Ca中之1種以上。 In one embodiment, the above-mentioned trace elements include at least one of Si in an amount of 0.16 ppm or more, Al in an amount of 0.10 ppm or more, and Ca in an amount of 0.04 ppm or more.
某實施形態中,作為上述微量元素,進而包含P及S,且P與S之質量比例合計為3ppm以上且30ppm以下。P與S之質量比例合計可為10ppm以上。即,適於應用於專利文獻3中記載之金屬粒子之製造方法。 In one embodiment, the trace elements further include P and S, and the total mass ratio of P and S is 3 ppm or more and 30 ppm or less. The total mass ratio of P and S may be 10 ppm or more. That is, it is suitable for the manufacturing method of the metal particle described in patent document 3.
某實施形態中,上述流孔具有由平行於鉛直方向之側壁劃定之長度為Lx且直徑為dx之直線部分,且上述直線部分滿足dx/2≦Lx≦10dx。 In one embodiment, the flow hole has a linear portion with a length Lx and a diameter dx defined by a side wall parallel to the vertical direction, and the linear portion satisfies dx / 2 ≦ Lx ≦ 10dx.
某實施形態中,上述流孔之上述直線部分之長度Lx滿足2.5μm≦Lx≦5mm。 In one embodiment, the length Lx of the linear portion of the flow hole satisfies 2.5 μm ≦ Lx ≦ 5 mm.
某實施形態中,上述金屬粒子之真球度為0.997以上。 In one embodiment, the true sphericity of the metal particles is 0.997 or more.
某實施形態中,上述金屬粒子之製造方法係連續地製造上述金屬粒子1小時以上。上述金屬粒子之製造方法亦可連續地製造上述金屬粒子3小時以上。 In one embodiment, the method for producing the metal particles is to continuously produce the metal particles for 1 hour or more. The manufacturing method of the said metal particle may manufacture the said metal particle continuously for 3 hours or more.
某實施形態中,將上述金屬粒子之製造規格上之直徑(粒徑)設為D,將構成上述金屬粒子群之金屬粒子之直徑(粒徑)作為總體所求出之標準偏差設為S時,包含上述連續地製造之上述金屬粒子之 金屬粒子群滿足S≦0.0036×D。再者,0.0036係被稱為評價係數之參數,該值越小,則構成金屬粒子群之金屬粒子之直徑(粒徑)之偏差越小。 In a certain embodiment, when the diameter (particle diameter) in the manufacturing specifications of the above-mentioned metal particles is set to D, and the standard deviation of the diameter (particle diameter) of the metal particles constituting the above-mentioned metal particle group as a whole is set to S Including the above-mentioned continuously produced metal particles The metal particle group satisfies S ≦ 0.0036 × D. In addition, 0.0036 is a parameter called an evaluation coefficient, and the smaller the value, the smaller the variation in the diameter (particle diameter) of the metal particles constituting the metal particle group.
根據本發明之某實施形態,提供一種藉由UDS法以高量產性製造具有較高真球度之Cu粒子之方法。 According to an embodiment of the present invention, a method is provided for producing Cu particles with high true sphericity by UDS method with high mass productivity.
1‧‧‧熔融金屬液滴 1‧‧‧ molten metal droplets
2‧‧‧熔融金屬材料 2‧‧‧ Molten Metal Materials
12‧‧‧流孔板 12‧‧‧ orifice plate
12a‧‧‧流孔 12a‧‧‧ orifice
14‧‧‧壓電元件 14‧‧‧ Piezoelectric element
15‧‧‧桿 15‧‧‧ shot
16‧‧‧振動單元 16‧‧‧Vibration unit
17‧‧‧坩鍋 17‧‧‧ Crucible
19‧‧‧腔室 19‧‧‧ chamber
100‧‧‧金屬離子製造裝置 100‧‧‧ metal ion manufacturing equipment
Lx‧‧‧長度 Lx‧‧‧ length
Dx‧‧‧直徑 Dx‧‧‧ diameter
V、G‧‧‧箭頭 V, G‧‧‧ arrows
圖1為表示用於本發明之實施形態之金屬粒子之製造方法的金屬粒子製造裝置100之構成例之示意圖。 FIG. 1 is a schematic diagram showing a configuration example of a metal particle manufacturing apparatus 100 used in a method for manufacturing metal particles according to an embodiment of the present invention.
圖2為金屬粒子製造裝置100所具有之流孔板12之流孔12a附近之示意性之截面圖。 FIG. 2 is a schematic cross-sectional view near the orifice 12 a of the orifice plate 12 included in the metal particle manufacturing apparatus 100.
圖3為金屬粒子製造裝置100所具有之流孔12a之利用掃描式電子顯微鏡所得之觀察像(以下稱為「SEM像」),(a)表示使用前之狀態,(b)表示使用後之狀態。 FIG. 3 is an observation image (hereinafter referred to as a “SEM image”) obtained by a scanning electron microscope of the flow holes 12 a included in the metal particle manufacturing apparatus 100. (A) indicates a state before use, and (b) indicates a state after use. status.
圖4為比較例之流孔之SEM像,(a)表示使用前之狀態,(b)表示使用後之狀態。 FIG. 4 is a SEM image of a flow hole of a comparative example. (A) shows a state before use, and (b) shows a state after use.
以下,參照圖式,對本發明之實施形態之金屬粒子之製造方法進行說明。以下,列舉專利文獻3中所記載之製造Cu粒子之例進行說明,但本發明之實施形態之金屬粒子之製造方法並不限於此,其亦可應用於使用包含Cu與微量元素、藉由GDMS分析所得之Cu之質量比例超過99.995%且微量元素包含Si、Al或Ca中之1種以上之金屬材料製造球狀金屬粒子之方法。 Hereinafter, a method for producing metal particles according to an embodiment of the present invention will be described with reference to the drawings. Hereinafter, the example of producing Cu particles described in Patent Document 3 will be described, but the method for producing metal particles according to the embodiment of the present invention is not limited to this, and it can also be applied to the use of GDMS including Cu and trace elements. Method for producing spherical metal particles by analyzing a metal material having a mass ratio of Cu exceeding 99.995% and a trace element containing one or more of Si, Al, or Ca metal materials.
GDMS分析係於Ar(氬)環境下將試樣作為陰極使其產生 輝光放電,於電漿內對試樣表面進行濺鍍,以質量分析計測定經離子化之構成元素之方法。GDMS分析能夠以於週期律上具有穩定同位素之大部分元素(Li~U)為對象,對大多元素以質量比例進行ppb水準之測定。 GDMS analysis is performed by using a sample as a cathode in an Ar (argon) environment. Glow discharge, a method of sputtering the surface of a sample in a plasma, and measuring the ionized constituent elements by a mass spectrometer. GDMS analysis can target most elements (Li ~ U) with stable isotopes on the periodic law, and measure most of the elements at a ppb level by mass ratio.
藉由GDMS分析可較ICP-AES分析更高精度地測定金屬材料中含有之化學成分。具體而言,能夠以0.0001%(1ppm)以下之解析度測定金屬粒子中之Cu之質量比例。但,由於GDMS分析中使用Ar氣體於產生輝光放電之壓力下對試樣進行濺鍍而進行分析,故會受到Ar氣體內等所殘留之例如C(碳)、N(氮)、O(氧)等大氣成分元素之影響。因此,難以區分該等元素是包含於試樣中者,還是因背景之影響所導致者。因此,表面易氧化之例如以Cu為主成分之金屬粒子較佳為於實施試樣(金屬粒子)之表面氧化層之去除處理後快速地進行GDMS分析。 GDMS analysis can more accurately determine the chemical components contained in metal materials than ICP-AES analysis. Specifically, the mass ratio of Cu in the metal particles can be measured at a resolution of 0.0001% (1 ppm) or less. However, in the GDMS analysis, the Ar gas is used to analyze the sample by sputtering under a pressure that generates a glow discharge. Therefore, it is subject to residuals such as C (carbon), N (nitrogen), and O (oxygen) in the Ar gas. ) And other atmospheric constituent elements. Therefore, it is difficult to distinguish whether these elements are contained in the sample or caused by the influence of the background. Therefore, it is preferred that the metal particles whose surface is easily oxidized, such as Cu, be subjected to GDMS analysis after the removal of the surface oxide layer of the sample (metal particles) is performed.
本發明之實施形態之金屬粒子之製造方法中所採用之金屬材料可使用例如JIS標準之C1011(Cu之質量%為99.99以上),但作為微量元素,可包含Si、Al或Ca中之1種以上。上述金屬材料進而可包含P或S中之1種以上。又,上述金屬材料於大多情形時為不可避免之雜質(元素),但進而可包含例如Pb、Bi、Sn、Sb、Zn、As、Ag、Cd、Ni、Au、U、Th、Cr、Se、Co、Mo、Fe中之1種以上,進而,作為氣體成分元素可包含H、C、N、O中之1種以上。 As the metal material used in the method for producing metal particles according to the embodiment of the present invention, for example, JIS C1011 (the mass% of Cu is 99.99 or more) may be used, but as a trace element, one of Si, Al, or Ca may be contained. the above. The metal material may further include one or more of P and S. The above-mentioned metal material is an unavoidable impurity (element) in many cases, but may further include, for example, Pb, Bi, Sn, Sb, Zn, As, Ag, Cd, Ni, Au, U, Th, Cr, Se , Co, Mo, and Fe may be one or more, and further, one or more of H, C, N, and O may be contained as a gas component element.
又,UDS法中,對於除了Cu之外還可包含上述微量元素之金屬材料進行加熱而製作熔融金屬材料時,使用包含氧化物等之耐火物(坩鍋等)。因此,熔融金屬材料中亦可能從坩鍋等混入Si、Al或Ca等微量元素。其後,如以實驗例所說明般,可知由於該等微量元素中之Si、Al及Ca於UDS法中難以完全阻斷氧,故於熔融狀態下會 生成氧化物,或以氧化物之狀態混入,該氧化物堆積於流孔之周邊,最終堵塞流孔。 In addition, in the UDS method, when a metal material which can contain the above-mentioned trace elements in addition to Cu is heated to produce a molten metal material, a refractory (such as a crucible) containing an oxide is used. Therefore, trace elements such as Si, Al, or Ca may be mixed into the molten metal material from a crucible or the like. Thereafter, as explained in the experimental examples, it can be seen that since Si, Al, and Ca in these trace elements are difficult to completely block oxygen in the UDS method, they will be in a molten state. An oxide is formed or mixed in the state of an oxide, and the oxide accumulates around the pores, eventually blocking the pores.
發現該氧化物於流孔周邊之堆積顯著發生在人工藍寶石製造之流孔板,而藉由使用人工單晶金剛石製造之流孔板可得以抑制。認為該氧化物之堆積顯著發生在人工藍寶石製造之流孔板之原因在於作為鋼玉(包括氧化鋁之結晶之礦物)之1種之人工藍寶石中所包含之氧之作用。再者,由於金剛石為碳之同素異形體之1種,且碳原子呈特殊之立方格子狀排列,故實質上不含有氧。 It was found that the accumulation of the oxide around the orifices occurred significantly in the orifice plate made of artificial sapphire, and the orifice plate made of artificial single crystal diamond could be suppressed. It is believed that the reason why the accumulation of the oxide occurs significantly in the orifice plate made of artificial sapphire is the action of oxygen contained in artificial sapphire, which is a kind of steel jade (including alumina crystalline mineral). Furthermore, since diamond is a kind of allotrope of carbon and carbon atoms are arranged in a special cubic lattice, it does not substantially contain oxygen.
圖1所示之金屬粒子製造裝置100包括:坩鍋17,其於底部具備具有流孔12a之流孔板12;振動單元16,其具備壓電元件14與桿15;及腔室19,其如箭頭G所示向內部導入惰性氣體。流孔板12以人工單晶金剛石形成,流孔12a之中心軸配置於箭頭V所示之鉛直方向。若流孔12a之中心軸以與鉛直方向即重力方向一致之方式配置,則可抑制熔融金屬材料2自流孔12a之出口側之邊緣沿底面(參照圖2)潤濕擴散。其結果,熔融金屬材料2自流孔12a滴下至惰性氣體之噴射流之中而形成之熔融金屬液滴1於箭頭V所示之鉛直方向穩定地移動(落下)。再者,將上述噴射流中之數個熔融金屬液滴1之流動稱為熔態金屬噴射。 The metal particle manufacturing apparatus 100 shown in FIG. 1 includes a crucible 17 having an orifice plate 12 having an orifice 12a at the bottom; a vibration unit 16 including a piezoelectric element 14 and a rod 15; and a chamber 19 which As shown by an arrow G, an inert gas is introduced into the inside. The orifice plate 12 is formed of artificial single crystal diamond, and the central axis of the orifice 12 a is arranged in a vertical direction indicated by an arrow V. If the center axis of the flow hole 12a is arranged to be consistent with the vertical direction, that is, the direction of gravity, the edge of the molten metal material 2 from the exit side of the flow hole 12a can be suppressed from wetting and spreading along the bottom surface (see FIG. 2). As a result, the molten metal droplet 1 formed by the molten metal material 2 dripping from the orifice 12a into the jet of an inert gas stably moves (falls) in the vertical direction shown by the arrow V. The flow of the plurality of molten metal droplets 1 in the jet stream is referred to as a molten metal jet.
圖2中,表示流孔板12之流孔12a附近之示意性之截面圖。流孔12a之直徑dx為5μm以上且1000μm以下,且根據欲製造之金屬粒子之直徑(粒徑)適當設定。流孔12a具有中心軸與鉛直方向一致且由具有圓形截面之側壁劃定之長度Lx的直線部分。較佳為該長度Lx之直線部分與流孔12a之直徑dx滿足既定關係,具體而言,較佳為滿足dx/2≦Lx≦10dx。再者,以下,將金屬粒子之直徑稱為粒徑, 將製造時設定之金屬粒子之直徑即欲製造之金屬粒子之粒徑稱為目標粒徑。 FIG. 2 is a schematic cross-sectional view showing the vicinity of the orifice 12 a of the orifice plate 12. The diameter dx of the orifice 12a is 5 μm or more and 1000 μm or less, and is appropriately set according to the diameter (particle diameter) of the metal particles to be produced. The flow hole 12a has a straight portion having a central axis that coincides with the vertical direction and a length Lx defined by a side wall having a circular cross section. It is preferable that the linear portion of the length Lx and the diameter dx of the flow hole 12a satisfy a predetermined relationship, and specifically, it is preferable to satisfy dx / 2 ≦ Lx ≦ 10dx. The diameter of the metal particles is hereinafter referred to as the particle diameter. The diameter of the metal particles set at the time of manufacturing, that is, the particle diameter of the metal particles to be manufactured is referred to as the target particle diameter.
當流孔12a之直線部分所規定之直徑dx與直線部分之長度Lx之關係滿足Lx<dx/2時,自流孔12a滴下之熔融金屬液滴1難以穩定地向箭頭V所示之鉛直方向之移動。因此,於上述噴射流之中熔融金屬液滴1容易失去直線性,會產生數個熔融金屬液滴1之流動即溶態金屬噴射之振動及分裂,難以形成具有目標粒徑之金屬粒子。又,於滿足Lx>10dx之情形時,熔融金屬材料2接觸之流孔12a之直線部分之表面積變大,流孔12a之直線部分相對於熔融金屬材料2之摩擦阻力變大。因此,自流孔12a滴下之熔融金屬液滴1之速度容易變得不穩定,而難以形成具有目標粒徑之金屬粒子。 When the relationship between the diameter dx specified by the straight portion of the orifice 12a and the length Lx of the straight portion satisfies Lx <dx / 2, it is difficult for the molten metal droplet 1 dropped from the orifice 12a to stably reach the vertical direction shown by the arrow V. mobile. Therefore, in the above-mentioned jet stream, the molten metal droplet 1 easily loses linearity, and the flow of several molten metal droplets 1, that is, vibration and splitting of the molten metal jet, and it is difficult to form metal particles having a target particle diameter. When Lx> 10dx is satisfied, the surface area of the linear portion of the flow hole 12a in contact with the molten metal material 2 increases, and the frictional resistance of the linear portion of the flow hole 12a with respect to the molten metal material 2 increases. Therefore, the speed of the molten metal droplet 1 dripped from the self-flow hole 12a tends to become unstable, and it is difficult to form metal particles having a target particle diameter.
流孔12a之直線部分之出口側(朝底面之開口部)例如以如下方式形成:不於角(邊緣)形成倒角(JIS B0701規定之C)或弧度(JIS B0701規定之R),保持直徑dx而於底面開口。長度Lx之直線部分之入口側(熔融金屬材料2之進入部)形成為直徑自dx朝向上方(與箭頭V相反之方向)變大,同時側壁相對於水平方向自90度變為0度(水平方向)之喇叭狀錐形曲面。坩鍋17內之熔融金屬材枓2(參照圖1)藉由上述錐形曲面而平滑地導入至直線部分。 The exit side (opening toward the bottom surface) of the straight portion of the orifice 12a is formed, for example, so as not to form a chamfer (C in accordance with JIS B0701) or radian (R in accordance with JIS B0701) at the corner (edge) and maintain the diameter dx opens on the bottom surface. The entrance side of the straight portion of the length Lx (the entrance portion of the molten metal material 2) is formed so that the diameter increases from dx upward (in the direction opposite to the arrow V), and the side wall changes from 90 degrees to 0 degrees with respect to the horizontal direction (horizontal Direction). The molten metal material 枓 2 (see FIG. 1) in the crucible 17 is smoothly introduced into the straight portion by the above-mentioned tapered curved surface.
再者,直線部分之出口側之角(邊緣)之形狀並不限於此,亦可形成倒角或弧度。圖2所例示之流孔12a之出口側之角(邊緣)即便於使用前為無倒角或弧度之直角之截面形狀,於使用中亦會因熔融金屬材料2通過而逐漸被削減,並逐漸變成具有倒角或弧度之形狀,但可穩定地形成熔融金屬液滴1。若直線部分之長度Lx例如未滿2.5um,如上所述,難以穩定地形成熔融金屬液滴1,或者,形成之熔融 金屬液滴1之體積變小,相對地,熔融金屬液滴1之體積之偏差變大。因此,直線部分之長度Lx可滿足2.5μm≦Lx≦10mm,較佳為滿足2.5μm≦Lx≦5mm,更佳為滿足2.5μm≦Lx≦1mm。直線部之長度Lx之上限只要熔態金屬噴射穩定則無特別限制,但人工單晶金剛石若超過10mm,則難以進行加工,及/或材料費高。因此,直線部之長度Lx較佳為10mm以下,較佳為藉由儘可能地將長度縮小為5mm以下、3mm以下、進而1mm以下,而可容易地進行人工單晶金剛石之加工。 Furthermore, the shape of the corner (edge) on the exit side of the straight portion is not limited to this, and a chamfer or radian may be formed. The angle (edge) of the exit side of the flow hole 12a illustrated in FIG. 2 is a cross-sectional shape without a chamfer or an arc before use, and will be gradually reduced due to the passage of the molten metal material 2 during use, and gradually Although it has a chamfered or radian shape, the molten metal droplet 1 can be formed stably. If the length Lx of the straight portion is, for example, less than 2.5 um, as described above, it is difficult to form the molten metal droplet 1 stably, or the molten metal formed is molten. The volume of the metal droplet 1 becomes smaller, and the variation in the volume of the molten metal droplet 1 becomes larger. Therefore, the length Lx of the straight portion can satisfy 2.5 μm ≦ Lx ≦ 10 mm, preferably 2.5 μm ≦ Lx ≦ 5 mm, and more preferably 2.5 μm ≦ Lx ≦ 1 mm. The upper limit of the length Lx of the straight portion is not particularly limited as long as the molten metal is sprayed stably, but if the artificial single crystal diamond exceeds 10 mm, it is difficult to process and / or the material cost is high. Therefore, the length Lx of the straight portion is preferably 10 mm or less, and it is preferable that the artificial single crystal diamond can be easily processed by reducing the length as much as possible to 5 mm or less, 3 mm or less, and further 1 mm or less.
自中心軸方向觀察流孔12a之直線部分時之形狀(垂直於中心軸方向之截面形狀)較佳為真圓度為0.9以上,進而較佳為0.99以上。若流孔12a之直線部分之形狀,特別是出口側之形狀之真圓度未滿0.9,則對於熔融金屬材料2之流動之壓力(噴霧壓)之作用方向會發生變化,數個熔融金屬液滴1之流動(熔態金屬噴射)易產生分裂,熔融金屬液滴1之體積之偏差易變大。 The shape (cross-sectional shape perpendicular to the central axis direction) when the straight portion of the flow hole 12a is viewed from the central axis direction is preferably a roundness of 0.9 or more, and more preferably 0.99 or more. If the shape of the straight portion of the flow hole 12a, especially the shape of the exit side, is less than 0.9, the direction of action of the pressure (spray pressure) on the flow of the molten metal material 2 changes, and several molten metal The flow of the droplet 1 (jet of molten metal) is prone to split, and the deviation of the volume of the molten metal droplet 1 is liable to become large.
再次參照圖1,對使用金屬粒子製造裝置100之金屬粒子(金屬粒子群)之製造方法進行說明。流孔板12係由人工單晶金剛石形成,除此以外,可與專利文獻3中記載之製造方法相同。 Referring to FIG. 1 again, a method for manufacturing metal particles (metal particle group) using the metal particle manufacturing apparatus 100 will be described. The orifice plate 12 may be the same as the manufacturing method described in Patent Document 3, except that the orifice plate 12 is formed of artificial single crystal diamond.
首先,向坩鍋17內投入成為金屬粒子之原料之金屬材料並加熱,製作熔融金屬材料2。成為原料之金屬材料包含Cu與微量元素,藉由GDMS分析所得之Cu之質量比例超過99.995%,微量元素包含Si、Al或Ca中之1種以上,使用該金屬材料所製作之熔融金屬材料2亦包含實質上相同之成分。由此,於其後之步驟中所製作之金屬粒子亦包含實質上相同之成分。再者,金屬材料中所包含之微量元素之質量 比例藉由例如以下之方法調整。藉由GDMS分析求出金屬材料中之作為Cu之母合金錠之純銅(純Cu)之組成。將母合金錠中欠缺之微量元素本身、或含有欠缺元素之銅合金(Cu合金)等添加至母合金錠並進行溶解以成為目標組成。再者,亦藉由GDMS分析預先求出為彌補欠缺元素而添加之銅合金之組成。 First, a metal material serving as a raw material of metal particles is put into the crucible 17 and heated to produce a molten metal material 2. The metal material used as the raw material contains Cu and trace elements. The mass ratio of Cu obtained by GDMS analysis exceeds 99.995%. The trace element contains one or more of Si, Al, or Ca. A molten metal material produced by using the metal material 2 It also contains substantially the same components. Therefore, the metal particles produced in the subsequent steps also contain substantially the same components. Moreover, the mass of trace elements contained in metal materials The ratio is adjusted by, for example, the following method. The composition of pure copper (pure Cu) as the master alloy ingot of Cu in the metal material was obtained by GDMS analysis. The missing trace element itself in the master alloy ingot, or a copper alloy (Cu alloy) containing the lacking element, is added to the master alloy ingot and dissolved to obtain a target composition. Furthermore, the composition of the copper alloy added to make up for the lack of elements was also determined in advance by GDMS analysis.
表1中,表示包含Cu與微量元素之銅原料(金屬材料)之組成之例。此處,使用JIS標準之C1011(Cu之質量%為99.99以上)。 Table 1 shows an example of the composition of a copper raw material (metal material) containing Cu and trace elements. Here, C1011 (mass% of Cu is 99.99 or more) of JIS standard was used.
如表1所示,作為微量元素,包含Si、Al或Ca中之1 種以上,進而,除P、S以外,包含例如Pb、Bi、Sn、Sb、Zn、As、Ag、Cd、Ni、Au、U、Th、Cr、Se、Co、Mo、Fe。該等微量元素中之Si、Al及Ca於保持在既定溫度範圍之熔融金屬材料2中作為氧化物而存在,於流孔板12為人工藍寶石製造之情形時,該氧化物堆積於流孔12a之周邊,最終堵塞流孔12a。此處例示之5種銅原料(金屬材料)中所包含之Si之最小含有率為0.16ppm,Al之最小含有率為0.10ppm,Ca之最小含有率為0.04ppm。 As shown in Table 1, as a trace element, one of Si, Al, or Ca is included. More than one, and in addition to P and S, for example, Pb, Bi, Sn, Sb, Zn, As, Ag, Cd, Ni, Au, U, Th, Cr, Se, Co, Mo, and Fe are included. The trace elements Si, Al and Ca exist as oxides in the molten metal material 2 maintained at a predetermined temperature range. When the orifice plate 12 is made of artificial sapphire, the oxides are accumulated in the orifice 12a. In the periphery, the flow hole 12a is finally blocked. The minimum content of Si contained in the five copper raw materials (metal materials) exemplified here is 0.16 ppm, the minimum content of Al is 0.10 ppm, and the minimum content of Ca is 0.04 ppm.
於坩鍋17內將熔融金屬材料2控制在既定之溫度範圍,並且於坩鍋17內施加0.05MPa以上且1.0MPa以下之壓力,將熔融金屬材料2自直徑5μm以上且1000μm以下之流孔12a如箭頭V所示地滴下,藉此,製作球狀熔融金屬液滴1。再者,圖1中,為了簡便而以箭頭V表示於惰性氣體之噴射流中連續地滴下之數個熔融金屬液滴1之流動(熔態金屬噴射)。此時,使用振動單元6,對坩鍋17內之熔融金屬材料2賦予既定之週期振動,藉此,可將於凝固後成為金屬粒子之熔融金屬液滴1控制為對應該振動週期之大小。此種金屬粒子之製造方法屬於UDS法。 In the crucible 17, the molten metal material 2 is controlled to a predetermined temperature range, and a pressure of 0.05 MPa or more and 1.0 MPa or less is applied in the crucible 17, and the molten metal material 2 is passed from the orifice 12a having a diameter of 5 μm to 1,000 μm As shown by an arrow V, a spherical molten metal droplet 1 is produced. In addition, in FIG. 1, for the sake of simplicity, the flow of a plurality of molten metal droplets 1 (molten metal spray) continuously dropped in a jet of an inert gas is indicated by an arrow V. At this time, the vibration unit 6 is used to apply a predetermined periodic vibration to the molten metal material 2 in the crucible 17, whereby the molten metal droplets 1 which become metal particles after solidification can be controlled to a size corresponding to the vibration period. The manufacturing method of such metal particles belongs to the UDS method.
用以滴下熔融金屬液滴1之流孔12a係以使其中心軸與鉛直方向即重力方向一致之方式配置。藉由該構成,可抑制熔融金屬材料2自流孔12a之出口側之邊緣沿底面(參照圖2)潤濕擴散。其結果,熔融金屬液滴1於箭頭V所示之鉛直方向穩定地滴下。認為熔融金屬材料2難以沿著底面潤濕擴散之原因在於:因包含流孔12a之側壁相對於包含表1所示之銅原料之熔融金屬材料2之靜態接觸角較大(約 160°)之人工單晶金剛石,故而有助於使熔融金屬材料2相對於流孔12之側壁之潤濕性降低。 The orifice 12a for dripping the molten metal droplet 1 is arrange | positioned so that the center axis may correspond to a vertical direction, that is, a gravity direction. With this configuration, it is possible to suppress the wetting and diffusion of the edge of the molten metal material 2 from the exit side of the self-flow hole 12a along the bottom surface (see FIG. 2). As a result, the molten metal droplet 1 is stably dropped in the vertical direction indicated by the arrow V. The reason why the molten metal material 2 is difficult to wet and diffuse along the bottom surface is considered to be because the static contact angle of the side wall including the flow hole 12a with respect to the molten metal material 2 including the copper raw material shown in Table 1 is large (about 160 °) artificial single crystal diamond, which helps to reduce the wettability of the molten metal material 2 with respect to the side wall of the flow hole 12.
於坩鍋17內施加之壓力(附加壓力)較佳為控制於0.05MPa以上且1.0MPa以下之範圍,藉此,能夠形成可期望較高之真球度之球狀熔融金屬液滴1。該附加壓力可藉由將控制為適量之惰性氣體導入至坩鍋17內之手段等獲得。若附加壓力未滿0.05MPa,則熔融金屬材料2通過流孔12a時之摩擦之影響會變大而自流孔12a滴下之熔融金屬材料2易變得不穩定,因此藉由熔融金屬液滴1之凝固而製作之金屬粒子之粒徑之偏差易變大。又,若使附加壓力超過1.0MPa,則自流孔12a滴下之熔融金屬液滴1易形成如橢圓球之球狀,因此藉由熔融金屬液滴1之凝固製作之金屬粒子之真球度易降低。 The pressure (additional pressure) applied in the crucible 17 is preferably controlled in a range of not less than 0.05 MPa and not more than 1.0 MPa, whereby a spherical molten metal droplet 1 having a high true sphericity can be formed. This additional pressure can be obtained by means of introducing a controlled amount of inert gas into the crucible 17 or the like. If the additional pressure is less than 0.05 MPa, the influence of friction when the molten metal material 2 passes through the orifice 12a becomes larger, and the molten metal material 2 dropped from the orifice 12a tends to become unstable. Therefore, by the molten metal droplet 1 The variation in the particle diameter of the metal particles produced by solidification is likely to increase. In addition, if the additional pressure exceeds 1.0 MPa, the molten metal droplet 1 dropped from the orifice 12a tends to form a spherical shape like an ellipsoid. Therefore, the true sphericity of metal particles produced by the solidification of the molten metal droplet 1 is liable to decrease. .
流孔12a之直徑dx較佳為,在考慮欲製作之金屬粒子之粒徑及真球度、上述附加壓力及振動週期之可調整範圍之基礎上,設定為適當之值。例如,於流孔12a之直徑dx較小之情形時,進行增大附加壓力、延長振動週期等調整,於流孔12a之直徑dx較大之情形時,只要進行與較小之情形相反之調整即可。再者,若附加壓力及振動週期之大小之設定過於偏向一方,則金屬粒子之粒徑及真球度之偏差會變大。為抑制該偏差,較佳為將流孔12a之直徑dx設定為5μm以上且1000μm以下之範圍。若使用直徑dx為5μm以上且1000μm以下之流孔12a,則可對應於該流孔12a之直徑dx,製作粒徑為10μm以上且1000μm以下之金屬粒子。 The diameter dx of the flow hole 12a is preferably set to an appropriate value in consideration of the particle diameter and true sphericity of the metal particles to be produced, and the adjustable range of the above-mentioned additional pressure and vibration period. For example, when the diameter dx of the orifice 12a is small, adjustments such as increasing the additional pressure and extending the vibration period are performed. When the diameter dx of the orifice 12a is large, only the opposite adjustment to the smaller case is required. Just fine. Moreover, if the setting of the magnitude of the applied pressure and the vibration period is too biased, the deviation of the particle size and true sphericity of the metal particles will increase. In order to suppress this deviation, it is preferable to set the diameter dx of the orifice 12a to a range of 5 μm or more and 1000 μm or less. If a flow hole 12a having a diameter dx of 5 μm or more and 1000 μm or less is used, metal particles having a particle size of 10 μm or more and 1000 μm or less can be produced corresponding to the diameter dx of the flow hole 12a.
又,流孔板12可針對每個金屬粒子之製造步驟進行更換,但難以於1次製造步驟中更換。因此,較佳為於設定對應於欲製作之金屬粒子之目標直徑之流孔12a之直徑dx後,調整附加壓力及振 動週期等其他條件。 The orifice plate 12 can be replaced for each manufacturing step of the metal particles, but it is difficult to replace the orifice plate 12 in one manufacturing step. Therefore, it is preferable to adjust the additional pressure and vibration after setting the diameter dx of the flow hole 12a corresponding to the target diameter of the metal particles to be produced. And other conditions.
進行上述熔融金屬液滴1之製作步驟,同時,將熔融金屬液滴1自流孔12a滴下至氧濃度以體積比例計為1000ppm以下之惰性氣體之噴射流中。於該噴射流中使熔融金屬液滴1急冷凝固。藉此,可使自流孔12a滴下之熔融金屬液滴1於氧濃度以體積比例計為1000ppm以下之環境下急冷凝固。藉由上述步驟,可製作粒徑為10μm以上且1000μm以下、包含Cu與微量元素、藉由GDMS分析所得之Cu之含有質量比例超過99.995%、作為微量元素包含Si、Al或Ca中之1種以上之數個金屬粒子。藉由使自流孔12a連續地滴下之多數熔融金屬液滴1連續地急冷凝固,可製作包含多數上述金屬粒子之金屬粒子群。 At the same time, the above-mentioned manufacturing step of the molten metal droplet 1 is performed, and simultaneously, the molten metal droplet 1 is dropped from the orifice 12a into a jet of an inert gas having an oxygen concentration of 1000 ppm or less in volume ratio. The molten metal droplets 1 are rapidly condensed in this jet. Thereby, the molten metal droplet 1 dripped from the flow hole 12a can be rapidly condensed and solidified in the environment where the oxygen concentration is 1000 ppm or less by volume ratio. Through the above steps, it is possible to produce a particle size of 10 μm or more and 1000 μm or less, containing Cu and trace elements, containing Cu in a mass ratio exceeding 99.995% by GDMS analysis, and containing one of Si, Al, or Ca as a trace element. Several of the above metal particles. By continuously condensing a large number of molten metal droplets 1 continuously dripped from the self-flow hole 12a, a metal particle group including a large number of the above-mentioned metal particles can be produced.
由惰性氣體形成之上述噴射流成為使熔融金屬液滴1急冷凝固時之環境氣體。用作環境氣體之惰性氣體可使用例如非氧化性之氬氣或氮氣等。即便於將任一氣體作為環境氣體使用之情形時,亦設為氧濃度以體積比例計為1000ppm以下之環境下。再者,可將與用作環境氣體之惰性氣體同等之惰性氣體作為導入至坩鍋17內之惰性氣體及導入至腔室19內之惰性氣體使用。 The above-mentioned jet formed by the inert gas becomes an ambient gas when the molten metal droplet 1 is rapidly condensed and solidified. As the inert gas used as the ambient gas, for example, non-oxidizing argon or nitrogen can be used. That is, when it is convenient to use any gas as an ambient gas, it is also set to an environment where the oxygen concentration is 1000 ppm or less by volume ratio. Furthermore, an inert gas equivalent to the inert gas used as the ambient gas can be used as the inert gas introduced into the crucible 17 and the inert gas introduced into the chamber 19.
圖1所示之例中,將腔室19內之氧濃度設為以體積比例計為1000ppm以下(例如300ppm左右)。若提高環境氣體中之氧濃度,則於熔融金屬液滴1凝固之過程中會生成氧化銅,其成為微細之凝固核,使凝固組織微細化,於金屬粒子形成表面氧化層,其厚度增大之傾向增強。若於金屬粒子形成較厚之表面氧化層,則其除去處理需要較多時間,並且有因該除去處理導致金屬粒子之粒徑及真球度存 在缺陷之虞。又,例如,於具有表面氧化層之金屬粒子之表面形成作為相對於焊料層為障壁層之鍍鎳層(Ni層)時,存在產生Ni層之密接不良及混有不具有Ni層之區域之表面形態(鍍覆斑)之情形。若存在此種缺陷,則Ni層無法作為使焊料層不與金屬粒子接觸之障壁層發揮功能,焊料層成為熔融焊料時,形成由金屬粒子中包含之Cu與焊料中包含之Sn(錫)所得之CuSn合金層之可能性增加。因此,本發明之實施形態中,為抑制於包含Cu之金屬粒子形成氧化銅之表面氧化層,而設為氧濃度以體積比例計為1000ppm以下之環境下。 In the example shown in FIG. 1, the oxygen concentration in the chamber 19 is set to 1000 ppm or less (for example, about 300 ppm) by volume ratio. If the oxygen concentration in the ambient gas is increased, copper oxide will be generated during the solidification of the molten metal droplet 1, which will become a fine nucleation core, refine the solidified structure, and form a surface oxide layer on the metal particles, which will increase its thickness Increasing tendency. If a thicker surface oxide layer is formed on the metal particles, the removal process requires more time, and the particle size and true sphericity of the metal particles may be caused by the removal process. Risk of defects. In addition, for example, when a nickel plating layer (Ni layer) serving as a barrier layer with respect to a solder layer is formed on the surface of metal particles having a surface oxide layer, there are areas where poor adhesion of the Ni layer occurs and areas where there is no Ni layer are mixed. Surface morphology (plating spots). If such a defect exists, the Ni layer cannot function as a barrier layer that prevents the solder layer from contacting the metal particles. When the solder layer becomes molten solder, it is formed from Cu contained in the metal particles and Sn (tin) contained in the solder. The possibility of CuSn alloy layer increases. Therefore, in the embodiment of the present invention, in order to suppress the formation of the surface oxide layer of copper oxide on the metal particles containing Cu, it is set to an environment where the oxygen concentration is 1000 ppm or less by volume ratio.
以下,表示實驗例(本發明例、比較例),進一步詳細地對本發明之實施形態之金屬粒子(金屬粒子群)之製造方法進行說明。 Hereinafter, experimental examples (inventive examples, comparative examples) will be described, and a method for producing metal particles (metal particle groups) according to an embodiment of the present invention will be described in more detail.
成為本發明例之金屬粒子(金屬粒子群)係使用具有人工單晶金剛石製造之流孔板12之金屬粒子製造裝置100而製造。成為比較例之金屬粒子(金屬粒子群)係於金屬粒子製造裝置100中使用人工藍寶石製造之流孔板代替人工單晶金剛石製造之流孔板12而製造。 The metal particles (group of metal particles) serving as an example of the present invention are manufactured using a metal particle manufacturing apparatus 100 having an orifice plate 12 made of artificial single crystal diamond. The metal particles (group of metal particles) as a comparative example are manufactured in the metal particle manufacturing apparatus 100 using an orifice plate made of artificial sapphire instead of the orifice plate 12 made of artificial single crystal diamond.
金屬粒子之目標粒徑:參照表2中表示為Cu粒子之直徑之製造規格D。 Target particle diameter of the metal particles: Refer to Table 2 for the production specifications D of Cu particle diameters.
流孔直徑dx:90μm Orifice diameter dx: 90μm
流孔之出口側之角(邊緣):90度(無倒角或弧度之形狀) Angle (edge) of exit side of orifice: 90 degrees (shape without chamfer or radian)
直線部分之長度Lx:0.06mm Length of straight part Lx: 0.06mm
流孔之圓形截面之真圓度:0.999 True roundness of circular cross section of orifice: 0.999
本發明例中,連續地製造金屬粒子(金屬粒子群)約4小時。自流孔噴出之熔融金屬材料之質量約為3.6kg。圖3中,表示用於 本發明例之人工單晶金剛石製造之流孔之SEM像。圖3(a)表示使用前之狀態,圖3(b)表示使用後(約4小時經過後)之狀態。 In the example of the present invention, metal particles (metal particle groups) were continuously produced for about 4 hours. The mass of the molten metal material sprayed from the orifice is about 3.6 kg. In Figure 3, SEM image of a flow hole made of artificial single crystal diamond of the present invention. Fig. 3 (a) shows the state before use, and Fig. 3 (b) shows the state after use (after about 4 hours).
本發明例中,自熔融金屬材料2開始滴下經過4小時後,未發現滴下之數個熔融金屬液滴1之流動(熔態金屬噴射)之縱向振動(重力方向上之流速變動)、及橫向振動(水平方向上之流速變動)等特別明顯之狀態之變化。本發明例中,於流孔之直線部分之出口側之角(邊緣)及其周邊(流孔板之底面)未發現附著物,但流孔之壁面之角(邊緣)略微損耗。藉由本發明例之製造方法所得之金屬粒子(金屬粒子群)之粒徑之偏差小,金屬粒子(金屬粒子群)之製造產率約為90%。其後,可使用相同之流孔板,重複實施滴下與上述相同程度之質量之熔融金屬材料2這一金屬粒子(金屬粒子群)之製造步驟,進行約10次。其結果,於連續製造金屬粒子(金屬粒子群)約40小時期間,可不更換人工單晶金剛石製造之流孔板而使用。 In the example of the present invention, after 4 hours from the start of dripping of the molten metal material 2, no vertical vibration (fluctuation of the flow rate in the direction of gravity) of the flow (molten metal jet) of the dripping molten metal droplets 1 was found. Vibration (variation of flow velocity in the horizontal direction) and other particularly noticeable changes in the state. In the example of the present invention, no attachment was found at the corner (edge) on the exit side of the straight portion of the orifice and its periphery (the bottom surface of the orifice plate), but the corner (edge) of the wall surface of the orifice was slightly lost. The variation in the particle diameter of the metal particles (metal particle group) obtained by the manufacturing method of the example of the present invention is small, and the production yield of the metal particles (metal particle group) is about 90%. Thereafter, the same flow orifice plate can be used to repeat the manufacturing step of dropping metal particles (metal particle groups) of the molten metal material 2 of the same quality as described above, which is performed about 10 times. As a result, it is possible to use the orifice plate made of artificial single crystal diamond for about 40 hours while continuously manufacturing the metal particles (metal particle group).
金屬粒子之目標粒徑:參照表2中表示為Cu粒子之直徑之製造規格D Target particle size of metal particles: Refer to Table 2 for manufacturing specifications D of Cu particle diameters
流孔直徑dx:90μm Orifice diameter dx: 90μm
流孔之出口側之角(邊緣):90度(無倒角或弧度之形狀) Angle (edge) of exit side of orifice: 90 degrees (shape without chamfer or radian)
直線部分之長度Lx:0.25mm Length of straight part Lx: 0.25mm
流孔之圓形截面之真圓度:0.999 True roundness of circular cross section of orifice: 0.999
比較例中,剛開始熔融金屬材料2之滴下後,無特別之問題。然而,自熔融金屬材料2開始滴下後經過10分鐘後,產生滴下之數個熔融金屬液滴1之流動(熔態金屬噴射)之縱向振動及橫向振 動,所製造之金屬粒子之粒徑開始變小。 In the comparative example, there was no particular problem immediately after the dripping of the molten metal material 2 was started. However, after 10 minutes have elapsed since the molten metal material 2 started to drip, a longitudinal vibration and a lateral vibration of the flow (molten metal jet) of several molten metal droplets 1 that have dropped are generated. As a result, the particle size of the produced metal particles starts to decrease.
圖4中,表示用於比較例之人工藍寶石製造之流孔之SEM像。圖4(a)表示使用前之狀態,圖4(b)表示使用後(約經過10分鐘後)之狀態。根據向上方(與重力方向相反之方向)觀察流孔之圖4(b)所示之SEM像,於流孔之直線部分之出口側之角(邊緣)及其周邊(流孔板之底面)發現附著物。就SEM-EDX分析之結果可知,該附著物包含Si、Al及Ca之氧化物。藉由比較例之製造方法所得之金屬粒子(金屬粒子群)之製造產率約為30%。 FIG. 4 shows an SEM image of a flow hole made of artificial sapphire used in a comparative example. Fig. 4 (a) shows the state before use, and Fig. 4 (b) shows the state after use (after about 10 minutes). Observe the SEM image shown in Figure 4 (b) of the orifice from the upward direction (opposite to the direction of gravity), the corner (edge) at the exit side of the straight portion of the orifice and its periphery (the bottom surface of the orifice plate) Found attachments. As a result of SEM-EDX analysis, it was found that the adherend included oxides of Si, Al, and Ca. The production yield of the metal particles (metal particle group) obtained by the production method of the comparative example was about 30%.
就上述本發明例及比較例之結果可知,藉由使用人工單晶金剛石製造之流孔板,可抑制Si、Al及Ca之氧化物堆積於流孔之出口側之角(邊緣)及其周邊(流孔板之底面)。即,使用包含Cu與微量元素、藉由GDMS分析所得之Cu之質量比例超過99.995%、微量元素包含Si、Al或Ca中之1種以上之金屬材料製造球狀金屬粒子(金屬粒子群)時,藉由人工單晶金剛石製造之流孔板,可提高量產性。 From the results of the above examples of the present invention and comparative examples, it can be seen that by using an orifice plate made of artificial single crystal diamond, it is possible to suppress the accumulation of oxides of Si, Al, and Ca on the corner (edge) of the exit side of the orifice and its periphery. (The bottom surface of the orifice plate). That is, when spherical metal particles (metal particle groups) are produced using a metal material containing Cu and trace elements, a mass ratio of Cu obtained by GDMS analysis exceeding 99.995%, and a trace element containing one or more of Si, Al, or Ca , Through the use of artificial single crystal diamond orifice plate, can improve mass productivity.
將構成金屬粒子群之金屬粒子之粒徑之偏差及真球度之評價結果示於表2。與上述本發明例及比較例相同地,將製造規格D(目標粒徑D)不同之金屬粒子(金屬粒子群)之製造結果示於表2。 Table 2 shows the evaluation results of the variation in the particle diameter of the metal particles constituting the metal particle group and the true sphericity. The manufacturing results of metal particles (metal particle groups) having different manufacturing specifications D (target particle diameter D) are shown in Table 2 in the same manner as the examples of the present invention and the comparative examples described above.
表2中所示之金屬粒子之粒徑及真球度係基於根據金屬粒子之影像資料求出之圓當量徑所得之值。具體而言,首先,對載置於平板上之金屬粒子照射平行光,使用遠心透鏡於電荷耦合器件(CCD,Charge Coupled Device)成像,根據所獲得之影像資料求出金屬粒子之面積。繼而,根據該金屬粒子之面積求出圓當量徑,並求出將該圓當量徑除以根據影像資料求得之最大投影長度後得到之長度比率。本發明中,將上述圓當量徑作為金屬粒子之粒徑,將上述長度比率作為金屬粒子之真球度。再者,表2中所示之金屬粒子之真球度係對500個金屬粒子之真球度進行算術平均而求得之平均值。 The particle diameter and true sphericity of the metal particles shown in Table 2 are values based on the circle-equivalent diameter obtained from the image data of the metal particles. Specifically, first, the metal particles placed on a flat plate are irradiated with parallel light, a telecentric lens is used to form an image on a charge coupled device (CCD), and the area of the metal particles is obtained based on the obtained image data. Then, a circle equivalent diameter is obtained from the area of the metal particles, and a length ratio obtained by dividing the circle equivalent diameter by the maximum projection length obtained from the image data is obtained. In the present invention, the circular equivalent diameter is taken as the particle diameter of the metal particles, and the length ratio is taken as the true sphericity of the metal particles. The true sphericity of the metal particles shown in Table 2 is an average value obtained by arithmetically averaging the true sphericity of 500 metal particles.
如表2所示,將金屬粒子之製造規格上之粒徑(目標粒徑)設為D,將金屬粒子群之粒徑作為總體所求出之標準偏差設為S時,本發明例之包含連續地製造之金屬粒子之金屬粒子群滿足S≦0.0036×D。此處,0.0036係被稱為評價係數A之參數,該值越小,則金屬粒子群之直徑之偏差越小。再者,金屬粒子群之粒徑是指自金屬粒子群抽取之數個金屬粒子之粒徑。又,成為總體之金屬粒子群之粒徑之資料數與自金屬粒子群抽取之金屬粒子之個數(取樣個數)相同。 As shown in Table 2, when the particle diameter (target particle diameter) in the manufacturing specifications of metal particles is set to D, and the standard deviation of the particle size of the metal particle group as a whole is set to S, the examples of the present invention include The metal particle group of continuously produced metal particles satisfies S ≦ 0.0036 × D. Here, 0.0036 is a parameter called the evaluation coefficient A. The smaller the value, the smaller the variation in the diameter of the metal particle group. The particle diameter of the metal particle group refers to the particle diameter of several metal particles extracted from the metal particle group. In addition, the number of pieces of data of the particle diameter of the metal particle group as a whole is the same as the number (number of samples) of metal particles extracted from the metal particle group.
求出上述標準偏差S,評價金屬粒子群是否為本發明之範圍時,就總體及標準偏差S之可靠性之觀點來看,期望作為總體之金屬粒子群之粒徑之資料數j(取樣個數j)依據JIS-Z9015(規範檢測標準II、標準檢測)。具體而言,自金屬粒子群抽取之金屬粒子之個數(取樣個數j)設為125個以上(j≧125),較佳為1250個以上,更佳為2000個以上。此處,實施例、比較例中之取樣個數j皆設為「500個」。 When the above-mentioned standard deviation S is obtained and the metal particle group is evaluated to be within the scope of the present invention, from the viewpoint of the reliability of the population and the standard deviation S, it is expected that the number of particles j of the particle size of the metal particle group as a whole (sampling number) The number j) is based on JIS-Z9015 (normative test standard II, standard test). Specifically, the number of metal particles (sampling number j) extracted from the metal particle group is set to 125 or more (j ≧ 125), preferably 1250 or more, and more preferably 2000 or more. Here, the number of samples j in the examples and comparative examples is set to "500".
上述資料數為j個之總體只要包括測定自藉由目標粒徑相同之製造步驟製造之金屬粒子群抽取之數個(125個以上)金屬粒子之 粒徑所獲得之j個資料即可,亦可並非來自製造批次相同之金屬粒子(金屬粒子群)之取樣。例如,自製造成製造規格D(目標粒徑D)之1批次之金屬粒子群除去結合2個以上金屬粒子之非球狀金屬粒子(雙球),得到包含球狀金屬粒子(單球)之金屬粒子群。其後,測定自該金屬粒子群抽取之數個(125個以上)金屬粒子之粒徑,得到j個粒徑資料(實測粒徑dj)。以此種方式得到之j個粒徑資料(實測粒徑dj)可作為以製造規格D製造之金屬粒子群(例如,於j=1~500之情形時,滿足j≧125個之包含500個金屬粒子之金屬粒子群)之總體。 The total number of the above data is j, as long as the measurement includes the number of (125 or more) metal particles extracted from the metal particle group manufactured by the manufacturing step with the same target particle size. The j pieces of data obtained by the particle size may be sufficient, and they may not be samples from metal particles (metal particle groups) of the same manufacturing batch. For example, one batch of metal particle groups resulting in manufacturing specification D (target particle size D) is produced by removing non-spherical metal particles (double spheres) that combine two or more metal particles to obtain spherical particles (single spheres). Swarm of metal particles. Thereafter, the particle diameters of several (125 or more) metal particles extracted from the metal particle group were measured to obtain j particle diameter data (measured particle diameter dj). The j particle size data (measured particle size dj) obtained in this way can be used as the metal particle group manufactured by the manufacturing specification D (for example, in the case of j = 1 to 500, 500 particles satisfying j ≧ 125 are included) Metal particle group).
繼而,可根據成為該總體之金屬粒子群之j個(j=500)金屬粒子之實測粒徑dj(j=1~500)求出平均粒徑Dm,求出標準偏差S=√[{(d1-Dm)2+(d2-Dm)2+...(dj-Dm)2}/j],根據是否滿足SA×D(評價係數A=0.0036)進行評價。其結果,於作為評價對象之金屬粒子群(取樣500個)滿足S≦A×D之情形時,可將成為經過該取樣之母體之金屬粒子群(製造成目標粒徑D者)全部視作良品之金屬粒子。 Then, the average particle diameter Dm can be obtained from the measured particle diameter dj (j = 1 to 500) of j (j = 500) metal particles that become the total metal particle group, and the standard deviation S = √ [{( d1-Dm) 2 + (d2-Dm) 2 + ... (dj-Dm) 2 } / j], depending on whether S is satisfied A × D (evaluation coefficient A = 0.0036) was evaluated. As a result, when the group of metal particles to be evaluated (500 samples are sampled) satisfies S ≦ A × D, all the metal particle groups (those manufactured to the target particle diameter D) that become the sampled body can be considered Good metal particles.
再者,上述評價係數A之上限值為0.0036。隨著評價係數A自0.0036向0.0035、0.0030、0.0025變小,金屬粒子群之粒徑之偏差變小,於金屬粒子群之粒徑分佈曲線(曲線圖)中,山形狀之曲線之波峰變得陡峭,並且山形狀之曲線之下端之寬度變窄。 The upper limit of the evaluation coefficient A is 0.0036. As the evaluation coefficient A decreases from 0.0036 to 0.0035, 0.0030, and 0.0025, the variation in the particle size of the metal particle group becomes smaller. In the particle size distribution curve (graph) of the metal particle group, the peak of the mountain-shaped curve becomes It is steep and the width at the lower end of the mountain-shaped curve becomes narrower.
根據本發明之實施形態,適於用於製造例如適於用作焊料被覆Cu球之核心的金屬粒子(金屬粒子群)。 According to the embodiment of the present invention, it is suitable for producing metal particles (metal particle groups) suitable for use as a core of a solder-coated Cu ball, for example.
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