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TWI675469B - Display device for displaying static pattern and manufacturing method thereof and gift box - Google Patents

Display device for displaying static pattern and manufacturing method thereof and gift box Download PDF

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Publication number
TWI675469B
TWI675469B TW107128085A TW107128085A TWI675469B TW I675469 B TWI675469 B TW I675469B TW 107128085 A TW107128085 A TW 107128085A TW 107128085 A TW107128085 A TW 107128085A TW I675469 B TWI675469 B TW I675469B
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layer
transparent insulating
display device
electrode
pattern
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TW107128085A
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Chinese (zh)
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TW201946263A (en
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江佳玲
吳學憲
賴奕廷
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矽碁科技股份有限公司
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Priority to CN201811049141.7A priority Critical patent/CN110416259A/en
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Publication of TWI675469B publication Critical patent/TWI675469B/en
Publication of TW201946263A publication Critical patent/TW201946263A/en

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Abstract

本發明提供一種用以顯示第一圖案的顯示裝置以及其製作方法與應用其之禮盒。顯示裝置包括基板以及設置於基板上的發光二極體。發光二極體包括第一電極、透明絕緣圖案層、發光層以及第二電極。透明絕緣圖案層設置於第一電極上,其中透明絕緣圖案層具有一厚度,小於或等於100奈米,且透明絕緣圖案層具有一第二圖案,與第一圖案互補。發光層覆蓋於透明絕緣圖案層與第一電極上,且發光層電連接第一電極。第二電極設置於發光層上。 The invention provides a display device for displaying a first pattern, a manufacturing method thereof, and a gift box using the same. The display device includes a substrate and a light emitting diode provided on the substrate. The light emitting diode includes a first electrode, a transparent insulating pattern layer, a light emitting layer, and a second electrode. The transparent insulation pattern layer is disposed on the first electrode, wherein the transparent insulation pattern layer has a thickness of less than or equal to 100 nm, and the transparent insulation pattern layer has a second pattern that is complementary to the first pattern. The light emitting layer covers the transparent insulating pattern layer and the first electrode, and the light emitting layer is electrically connected to the first electrode. The second electrode is disposed on the light emitting layer.

Description

用於顯示靜態圖案的顯示裝置以及其製作方法與禮盒 Display device for displaying static pattern, manufacturing method and gift box thereof

本發明係關於一種用於顯示靜態圖案的顯示裝置以及其製作方法與禮盒,尤指一種可切換圖案顯示模式與無圖案模式的顯示裝置以及其製作方法與應用顯示裝置之禮盒。 The invention relates to a display device for displaying a static pattern, a manufacturing method and a gift box thereof, and particularly to a display device capable of switching a pattern display mode and a non-pattern mode, and a manufacturing method and a gift box using the display device.

傳統顯示裝置為了依據需求顯示出圖案,因此包含有主動陣列電路以及複數個像素,以透過主動陣列電路控制像素的顯示。然而,針對顯示特定圖案的需求而言,例如名片或展示解說牌,傳統顯示裝置雖然可顯示出特定圖案,以滿足此需求,但其成本過高,甚至遠超過產品原有的價格,故傳統顯示裝置並不會應用至這些需求中。目前針對顯示特定圖案的需求,一般僅以已印刷有圖案的紙張來滿足,雖然可顯示出所需的圖案,但使用者可直接看到圖案,也就是紙張並無法在不同的狀態進行切換,因此限制了此紙張的應用範圍,進而無法提供使用者有更廣泛的需求。 In order to display a pattern according to requirements, a conventional display device includes an active array circuit and a plurality of pixels, so as to control the display of the pixels through the active array circuit. However, for the needs of displaying specific patterns, such as business cards or display cards, although traditional display devices can display specific patterns to meet this demand, the cost is too high, even far exceeding the original price of the product. The display device is not applied to these needs. At present, the demand for displaying specific patterns is generally only satisfied by printed paper. Although the required patterns can be displayed, users can directly see the patterns, that is, the paper cannot be switched in different states. Therefore, the application range of this paper is limited, and thus it cannot provide users with a wider range of needs.

本發明的目的之一在於提供一種用於顯示靜態圖案的顯示裝置、其製作方法與禮盒,以降低成本,並提升顯示裝置的應用範圍。 One of the objectives of the present invention is to provide a display device for displaying a static pattern, a manufacturing method thereof and a gift box, so as to reduce the cost and increase the application range of the display device.

本發明的一實施例提供一種顯示裝置,用以顯示第一圖案。顯示裝置包括基板以及發光二極體。發光二極體設置於基板上,並包括第一電極、透明絕緣圖案層、發光層以及第二電極。透明絕緣圖案層設置於第一電極上,其中透明絕緣圖案層具有一厚度,小於或等於100奈米,且透明絕緣圖案層具有一第二圖案,與第一圖案互補。發光層覆蓋於透明絕緣圖案層上,且發光層電連接第一電極。第二電極設置於發光層上。 An embodiment of the present invention provides a display device for displaying a first pattern. The display device includes a substrate and a light emitting diode. The light emitting diode is disposed on the substrate and includes a first electrode, a transparent insulating pattern layer, a light emitting layer, and a second electrode. The transparent insulation pattern layer is disposed on the first electrode, wherein the transparent insulation pattern layer has a thickness of less than or equal to 100 nm, and the transparent insulation pattern layer has a second pattern that is complementary to the first pattern. The light emitting layer covers the transparent insulating pattern layer, and the light emitting layer is electrically connected to the first electrode. The second electrode is disposed on the light emitting layer.

本發明的另一實施例提供一種用以顯示出第一圖案的顯示裝置之製作方法。首先,提供一基板以及一第一電極,其中第一電極形成於基板上。之後,於第一電極上形成一透明絕緣圖案層,其中透明絕緣圖案層具有一厚度,小於或等於100奈米,且透明絕緣圖案層具有一第二圖案,與第一圖案互補。接著,形成發光層覆蓋於透明絕緣圖案層與第一電極上,其中發光層電連接第一電極。然後,於發光層上形成一第二電極,以形成一發光二極體。 Another embodiment of the present invention provides a manufacturing method of a display device for displaying a first pattern. First, a substrate and a first electrode are provided, wherein the first electrode is formed on the substrate. Thereafter, a transparent insulating pattern layer is formed on the first electrode, wherein the transparent insulating pattern layer has a thickness of less than or equal to 100 nm, and the transparent insulating pattern layer has a second pattern that is complementary to the first pattern. Next, a light emitting layer is formed to cover the transparent insulating pattern layer and the first electrode, wherein the light emitting layer is electrically connected to the first electrode. Then, a second electrode is formed on the light emitting layer to form a light emitting diode.

本發明的又一實施例提供一種禮盒,其包括一開口以及一顯示裝置。顯示裝置覆蓋開口,並用以顯示一第一圖案,且顯示裝置包括基板以及發光二極體。發光二極體設置於基板上,並包括第一電極、透明絕緣圖案層、發光層以及第二電極。透明絕緣圖案層設置於第一電極上,其中透明絕緣圖案層具有一厚度,小於或等於100奈米,且透明絕緣圖案層具有一第二圖案,與第一圖案互補。發光層覆蓋於透明絕緣圖案層上,且發光層電連接第一電極。第二電極設置於發光層上。 Another embodiment of the present invention provides a gift box, which includes an opening and a display device. The display device covers the opening and is used to display a first pattern. The display device includes a substrate and a light emitting diode. The light emitting diode is disposed on the substrate and includes a first electrode, a transparent insulating pattern layer, a light emitting layer, and a second electrode. The transparent insulation pattern layer is disposed on the first electrode, wherein the transparent insulation pattern layer has a thickness of less than or equal to 100 nm, and the transparent insulation pattern layer has a second pattern that is complementary to the first pattern. The light emitting layer covers the transparent insulating pattern layer, and the light emitting layer is electrically connected to the first electrode. The second electrode is disposed on the light emitting layer.

於本發明的顯示裝置的製作方法中,透過原子層沉積製程、濺鍍製程或電子束蒸鍍製程形成厚度小於或等於100奈米的透明絕緣圖案層,可使透明絕緣圖案層達到絕緣的效果,因此顯示裝置可具有可切換圖案顯示模式與無圖案模式的功用。再者,透過將透明絕緣圖案層的厚度降低至小於或等於50奈米,還可降低透明絕緣圖案層的可視度,以提升顯示裝置的透明度。 In the manufacturing method of the display device of the present invention, a transparent insulating pattern layer having a thickness of less than or equal to 100 nm is formed through an atomic layer deposition process, a sputtering process, or an electron beam evaporation process, so that the transparent insulating pattern layer can achieve an insulating effect. Therefore, the display device can have the function of switching the pattern display mode and the non-pattern mode. Furthermore, by reducing the thickness of the transparent insulating pattern layer to 50 nm or less, the visibility of the transparent insulating pattern layer can also be reduced to improve the transparency of the display device.

100、404‧‧‧顯示裝置 100, 404‧‧‧ display device

102‧‧‧基板 102‧‧‧ substrate

104‧‧‧第一電極 104‧‧‧first electrode

106‧‧‧透明絕緣圖案層 106‧‧‧ transparent insulating pattern layer

106a‧‧‧透明絕緣層 106a‧‧‧ transparent insulating layer

108‧‧‧犧牲圖案層 108‧‧‧ sacrificial pattern layer

108a‧‧‧犧牲層 108a‧‧‧ sacrificial layer

110‧‧‧注入層 110‧‧‧ injection layer

112‧‧‧發光層 112‧‧‧Light-emitting layer

114‧‧‧第二電極 114‧‧‧Second electrode

116‧‧‧保護層 116‧‧‧Protective layer

302‧‧‧網版 302‧‧‧Online

LD‧‧‧發光二極體 LD‧‧‧Light Emitting Diode

P1‧‧‧第一圖案 P1‧‧‧The first pattern

P2‧‧‧第二圖案 P2‧‧‧Second Pattern

P3、P4‧‧‧圖案 P3, P4 ‧‧‧ patterns

PW‧‧‧電源 PW‧‧‧ Power

OP1‧‧‧第一開口 OP1‧‧‧first opening

OP2‧‧‧第二開口 OP2‧‧‧Second Opening

OP3‧‧‧第三開口 OP3‧‧‧ third opening

S1‧‧‧第一表面 S1‧‧‧First surface

S2‧‧‧第二表面 S2‧‧‧Second surface

L1、L2、L3、L4‧‧‧曲線 L1, L2, L3, L4‧‧‧ curves

LB1、LB2‧‧‧光線 LB1, LB2‧‧‧‧Light

400‧‧‧禮盒 400‧‧‧ Gift Box

402‧‧‧開口 402‧‧‧ opening

406‧‧‧盒體 406‧‧‧Box

408‧‧‧上蓋 408‧‧‧ Upper cover

406R‧‧‧凹槽 406R‧‧‧Groove

410‧‧‧連接轉軸 410‧‧‧Connected to the shaft

第1圖至第7圖繪示本發明第一實施例的顯示裝置的製作方法示意圖。 FIG. 1 to FIG. 7 are schematic diagrams illustrating a method for manufacturing a display device according to a first embodiment of the present invention.

第8圖為利用原子層沉積製程所形成的透明絕緣層與基板的穿透度與波長的關係示意圖。 FIG. 8 is a schematic diagram showing the relationship between the transmittance and the wavelength of the transparent insulating layer and the substrate formed by the atomic layer deposition process.

第9圖為利用濺鍍製程所形成的透明絕緣層與基板的穿透度與波長的關係示意圖。 FIG. 9 is a schematic diagram showing the relationship between the transmittance and the wavelength of a transparent insulating layer and a substrate formed by a sputtering process.

第10圖為利用電子束蒸鍍製程所形成的透明絕緣層與基板的穿透度與波長的關係示意圖。 FIG. 10 is a schematic diagram showing the relationship between the transmittance and the wavelength of the transparent insulating layer and the substrate formed by the electron beam evaporation process.

第11圖與第12圖繪示本發明第二實施例的顯示裝置的製作方法示意圖。 11 and 12 are schematic diagrams illustrating a method for manufacturing a display device according to a second embodiment of the present invention.

第13圖繪示本發明第三實施例的顯示裝置的製作方法示意圖。 FIG. 13 is a schematic diagram of a manufacturing method of a display device according to a third embodiment of the present invention.

第14圖繪示本發明第四實施例的禮盒在上蓋闔上時的側視示意圖。 FIG. 14 is a schematic side view of a gift box according to a fourth embodiment of the present invention when the gift box is placed on an upper lid.

第15圖繪示本發明第四實施例的禮盒在上蓋掀開時的側視示意圖。 FIG. 15 is a schematic side view of a gift box according to a fourth embodiment of the present invention when the upper cover is opened.

第1圖至第7圖繪示本發明第一實施例的顯示裝置的製作方法示意圖,其中第6圖為本發明第一實施例的顯示裝置的剖視示意圖,第7圖為本發明第一實施例的顯示裝置的俯視示意圖。本發明的顯示裝置100係用於顯示靜態且具有涵義之一第一圖案P1,如第7圖所示。舉例來說,第一圖案P1可包括文字描述、徽章圖案或商標圖案,但不以此為限。本實施例的顯示裝置100的製作方法包含以下步驟。如第1圖所示,首先提供一基板102以及一第一電極104,其中第一電極104形成於基板102上。基板102用於承載後續步驟所形成的元件,且基板102可為硬質基板或可撓性基板。硬質基板可例如玻璃、塑膠、石英、藍寶石或 其他適合的材料。可撓性基板可例如包括聚醯亞胺(PI)、聚對苯二甲酸乙二脂(PET)或其他適合的材料中的至少一種。第一電極104可包括透明導電材料。透明導電材料例如包括透明金屬氧化物材料或具有薄厚度的金屬材料,其中透明金屬氧化物材料包括例如銦錫氧化物(indium tin oxide,ITO)、銦鋅氧化物(indium zinc oxide,IZO)、銻錫氧化物(antimony tin oxide,ATO)、鋁鋅氧化物(aluminum zinc oxide,AZO)、銦鍺鋅氧化物(indium gallium zinc oxide,IGZO)、其他適合的氧化物或上述至少兩者的組合或堆疊,金屬材料的厚度可例如小於100奈米,使金屬材料呈現透明狀態,但不限於此。於一實施例中,基板102可在形成有第一電極104之後再切割至符合需求的尺寸,但不限於此。 FIG. 1 to FIG. 7 are schematic diagrams of a method for manufacturing a display device according to a first embodiment of the present invention, wherein FIG. 6 is a schematic cross-sectional view of a display device according to the first embodiment of the present invention, and FIG. A schematic plan view of the display device of the embodiment. The display device 100 of the present invention is used to display a first pattern P1 that is static and has one meaning, as shown in FIG. 7. For example, the first pattern P1 may include a text description, a badge pattern, or a trademark pattern, but is not limited thereto. The manufacturing method of the display device 100 of this embodiment includes the following steps. As shown in FIG. 1, a substrate 102 and a first electrode 104 are first provided. The first electrode 104 is formed on the substrate 102. The substrate 102 is used to carry components formed in subsequent steps, and the substrate 102 may be a rigid substrate or a flexible substrate. Rigid substrates such as glass, plastic, quartz, sapphire or Other suitable materials. The flexible substrate may, for example, include at least one of polyimide (PI), polyethylene terephthalate (PET), or other suitable materials. The first electrode 104 may include a transparent conductive material. The transparent conductive material includes, for example, a transparent metal oxide material or a metal material having a thin thickness, wherein the transparent metal oxide material includes, for example, indium tin oxide (ITO), indium zinc oxide (IZO), Antimony tin oxide (ATO), aluminum zinc oxide (AZO), indium germanium zinc oxide (IGZO), other suitable oxides, or a combination of at least two of the above Or stacked, the thickness of the metal material may be, for example, less than 100 nm, so that the metal material is in a transparent state, but is not limited thereto. In an embodiment, the substrate 102 may be cut to a size that meets the requirements after the first electrode 104 is formed, but is not limited thereto.

接下來,於第一電極104上形成一透明絕緣圖案層106。本實施例形成透明絕緣圖案層106詳細說明如下,但不以此為限。首先於第一電極104上形成一犧牲層108a。犧牲層108a可例如包括光阻材料或膠布,但不以此為限。然後,對犧牲層108a進行一圖案化製程,以於第一電極104上形成一犧牲圖案層108,並曝露出第一電極104。犧牲圖案層108可具有一圖案P3,與顯示裝置100欲顯示出的第一圖案P1相同。於本實施例中,圖案化製程可包括微影製程(photolithographic process),但不限於此。具體來說,如第2圖所示,可先透過曝光(exposure)製程搭配光罩PM,使部分犧牲層108a不易溶解於顯影液或易於溶解於顯影液。以犧牲層108a為負型光阻材料為例來說,光罩PM可具有與顯示裝置100欲顯示出的第一圖案P1相同的圖案,透過光源的光線LB1經過光罩PM而成為具有圖案的光線LB2,並將其照射在犧牲層108a上,使得犧牲層108a具有圖案P3的部分被強化而不易溶解於顯影液。因此,如第3圖所示,在曝光製程之後,對犧牲層108a進行顯影(development)製程,以移除未被光線照射的部分,進而形成犧牲圖案層108。詳細來說,犧牲圖案層108可具有至少一第一開口OP1,且第一開口OP1曝露出位於犧牲圖案層108下的第一電極104,並可具有與圖案P3互補的圖案P4。於另一實 施例中,圖案化製程也可為壓印(imprint)製程。於又一實施例中,圖案化製程也可包括雷射蝕刻製程,以直接利用雷射移除具有圖案P4的部分犧牲層108,進而形成具有圖案P3的犧牲圖案層108。 Next, a transparent insulating pattern layer 106 is formed on the first electrode 104. The detailed description of forming the transparent insulating pattern layer 106 in this embodiment is as follows, but it is not limited thereto. First, a sacrificial layer 108a is formed on the first electrode 104. The sacrificial layer 108a may include, for example, a photoresist material or a tape, but is not limited thereto. Then, a patterning process is performed on the sacrificial layer 108 a to form a sacrificial pattern layer 108 on the first electrode 104 and expose the first electrode 104. The sacrificial pattern layer 108 may have a pattern P3 which is the same as the first pattern P1 to be displayed by the display device 100. In this embodiment, the patterning process may include a photolithographic process, but is not limited thereto. Specifically, as shown in FIG. 2, an exposure process and a photomask PM can be used first to make part of the sacrificial layer 108 a difficult to dissolve in the developer or easily dissolve in the developer. Taking the sacrificial layer 108a as a negative photoresist material as an example, the mask PM may have the same pattern as the first pattern P1 to be displayed by the display device 100, and the light beam LB1 transmitted through the light source passes through the mask PM to become patterned. The light LB2 is irradiated onto the sacrificial layer 108a, so that the portion of the sacrificial layer 108a having the pattern P3 is strengthened and is not easily dissolved in the developing solution. Therefore, as shown in FIG. 3, after the exposure process, a development process is performed on the sacrificial layer 108 a to remove portions that are not irradiated with light, thereby forming a sacrificial pattern layer 108. In detail, the sacrificial pattern layer 108 may have at least one first opening OP1, and the first opening OP1 exposes the first electrode 104 under the sacrificial pattern layer 108, and may have a pattern P4 complementary to the pattern P3. Yu Shi In an embodiment, the patterning process may also be an imprint process. In yet another embodiment, the patterning process may also include a laser etching process to directly remove a portion of the sacrificial layer 108 having the pattern P4 by using a laser, thereby forming a sacrificial pattern layer 108 having the pattern P3.

如第4圖所示,在形成犧牲圖案層108之後,於犧牲圖案層108與曝露出的第一電極104上形成一透明絕緣層106a。於本實施例中,形成透明絕緣層106a可例如包括原子層沉積製程(atomic layer deposition process)、濺鍍製程(sputter process)或電子束蒸鍍製程(electron gun evaporation process)。值得一提的是,當犧牲圖案層108包括光阻材料時,為了避免高溫對犧牲圖案層108中的光阻材料產生交叉鏈接(cross-link),而造成光阻材料在後續的製程中不易移除,原子層沉積製程的溫度可小於150℃。 As shown in FIG. 4, after the sacrificial pattern layer 108 is formed, a transparent insulating layer 106 a is formed on the sacrificial pattern layer 108 and the exposed first electrode 104. In this embodiment, forming the transparent insulating layer 106 a may include, for example, an atomic layer deposition process, a sputtering process, or an electron gun evaporation process. It is worth mentioning that, when the sacrificial pattern layer 108 includes a photoresist material, in order to avoid high temperature, the photoresist material in the sacrificial pattern layer 108 is cross-linked, so that the photoresist material is not easy in subsequent processes For removal, the temperature of the atomic layer deposition process may be less than 150 ° C.

如第5圖所示,隨後移除犧牲圖案層108與位於犧牲圖案層108上的透明絕緣層106a,以於第一電極104上形成透明絕緣圖案層106。以犧牲層108a為光阻材料為例,移除犧牲圖案層108的步驟可稱為舉離(lift-off)製程,但本發明不限於此。於另一實施例中,當犧牲層108a為膠布時,可直接透過撕離膠布,以形成透明絕緣圖案層106,並曝露出第一電極104。由於犧牲圖案層108具有與顯示裝置100欲顯示出的第一圖案P1相同的圖案P3,因此透過移除犧牲圖案層108所形成的透明絕緣圖案層106可具有與第一圖案P1互補的第二圖案P2,以及具有第一圖案P1的至少一第二開口OP2,其中第二開口OP2曝露出第一電極104。透明絕緣圖案層106可例如包括氧化鋁(Al2O3)、氧化鋡(HfO2)、氧化矽(SiO2)、氧化鈦(TiO2)、鈦酸鍶(SrTiO3)、氧化鉭(Ta2O5)、氧化釓(Gd2O3)、氧化鋯(ZrO2)、氧化鎵(Ga2O3)、氧化釩(V2O5)、氧化鈷(Co3O4)、氧化鋅(ZnO)、摻雜鋁之氧化鋅(ZnO:Al)、摻雜硼之氧化鋅(ZnO:B)、摻雜氫之氧化銦(In2O3:H)、氧化鎢(WO3)、氧化鉬(MoO3)、氧化鈮(Nb2O5)、氧化鎳(NiO)、氧化鎂(MgO)、氧化釕(RuO2)或上述任兩者之結合。 As shown in FIG. 5, the sacrificial pattern layer 108 and the transparent insulating layer 106 a on the sacrificial pattern layer 108 are subsequently removed to form a transparent insulating pattern layer 106 on the first electrode 104. Taking the sacrificial layer 108a as a photoresist material as an example, the step of removing the sacrificial pattern layer 108 may be referred to as a lift-off process, but the present invention is not limited thereto. In another embodiment, when the sacrificial layer 108 a is a tape, the tape can be peeled off directly to form a transparent insulating pattern layer 106 and the first electrode 104 is exposed. Since the sacrificial pattern layer 108 has the same pattern P3 as the first pattern P1 to be displayed by the display device 100, the transparent insulating pattern layer 106 formed by removing the sacrificial pattern layer 108 may have a second complementary to the first pattern P1. The pattern P2 and at least one second opening OP2 having a first pattern P1, wherein the second opening OP2 exposes the first electrode 104. The transparent insulating pattern layer 106 may include, for example, aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), strontium titanate (SrTiO 3 ), tantalum oxide (Ta 2 O 5 ), gadolinium oxide (Gd 2 O 3 ), zirconia (ZrO 2 ), gallium oxide (Ga 2 O 3 ), vanadium oxide (V 2 O 5 ), cobalt oxide (Co 3 O 4 ), zinc oxide (ZnO), aluminum-doped zinc oxide (ZnO: Al), boron-doped zinc oxide (ZnO: B), hydrogen-doped indium oxide (In 2 O 3 : H), tungsten oxide (WO 3 ), Molybdenum oxide (MoO 3 ), niobium oxide (Nb 2 O 5 ), nickel oxide (NiO), magnesium oxide (MgO), ruthenium oxide (RuO 2 ), or a combination of any of the above.

如第6圖與第7圖所示,在形成透明絕緣圖案層106之後,形成一發光 層112覆蓋於透明絕緣圖案層106與第一電極104上。由於透明絕緣圖案層106曝露出第一電極104,因此所形成的發光層112可透過第二開口OP2電連接第一電極104。然後,於發光層112上形成一第二電極114,以形成發光二極體LD。發光二極體LD可例如有機發光二極體、量子點發光二極體、其他類型發光二極體或上述至少一類型的複數個堆疊。當發光二極體LD為有機發光二極體時,發光層112包括有機發光材料。第一電極104與第二電極114可分別為陽極與陰極,或者兩者可彼此互換。於本實施例中,發光二極體LD為透明,也就是說第一電極104與第二電極114可由透明導電材料所形成,例如金屬氧化物或具有薄厚度的金屬,因此發光二極體LD可分別從上下兩側射出光線(如第6圖的箭頭所示),讓位於顯示裝置100兩側的使用者均可觀看到第一圖案P1。形成發光二極體LD的方法為所屬領域具有通常知識者所熟知,因此本文省略相關描述。此外,本發明的第一開口OP1與第二開口OP2的數量與大小係依據第一圖案P1的樣式來決定,因此第3圖與第4圖所示的第一開口OP1的數量與大小以及第5圖與第6圖所示的第二開口OP2的數量與大小僅為示意,並非用來限制本發明的範圍。 As shown in FIGS. 6 and 7, after the transparent insulating pattern layer 106 is formed, a light emission is formed. The layer 112 covers the transparent insulating pattern layer 106 and the first electrode 104. Since the transparent insulating pattern layer 106 exposes the first electrode 104, the formed light-emitting layer 112 can be electrically connected to the first electrode 104 through the second opening OP2. Then, a second electrode 114 is formed on the light emitting layer 112 to form a light emitting diode LD. The light emitting diode LD may be, for example, an organic light emitting diode, a quantum dot light emitting diode, other types of light emitting diodes, or a plurality of stacks of at least one type. When the light emitting diode LD is an organic light emitting diode, the light emitting layer 112 includes an organic light emitting material. The first electrode 104 and the second electrode 114 may be an anode and a cathode, respectively, or they may be interchanged with each other. In this embodiment, the light-emitting diode LD is transparent, that is, the first electrode 104 and the second electrode 114 may be formed of a transparent conductive material, such as a metal oxide or a metal having a thin thickness, so the light-emitting diode LD Light can be emitted from the upper and lower sides (as shown by arrows in FIG. 6), so that users on both sides of the display device 100 can view the first pattern P1. The method of forming the light-emitting diode LD is well known to those having ordinary knowledge in the art, so the related description is omitted herein. In addition, the number and size of the first opening OP1 and the second opening OP2 of the present invention are determined according to the pattern of the first pattern P1. Therefore, the number and size of the first opening OP1 and the The number and size of the second openings OP2 shown in FIG. 5 and FIG. 6 are merely illustrative, and are not intended to limit the scope of the present invention.

於本實施例中,於形成透明絕緣圖案層106與形成發光層112之間,可選擇性另形成一注入層110覆蓋於透明絕緣圖案層106與第一電極104上。當第一電極104為陽極時,注入層110可為電洞注入層,以有助於將來自第一電極104的電洞注入至發光層112中。當第一電極104為陰極時,注入層110可為電子注入層,以有助於將來自第一電極104的電子注入至發光層112中。注入層110可透過第二開口OP2電連接或接觸第一電極104。於另一實施例中,於形成發光層112與形成第二電極114之間,也可選擇性形成另一注入層,於發光層112與第二電極114之間。當第二電極114為陽極時,此另一注入層可為電洞注入層。當第二電極114為陰極時,此另一注入層可為電子注入層。電子注入層可例如包括電子注入材料及/或電子傳輸材料,電洞注入層可例如包括電洞注入材料及/或電洞傳輸材 料。於又一實施例中,形成透明絕緣圖案層106與形成注入層110之間也可選擇形成額外的透明導電層,但不以此為限。 In this embodiment, between the transparent insulating pattern layer 106 and the light emitting layer 112, an implantation layer 110 may be selectively formed to cover the transparent insulating pattern layer 106 and the first electrode 104. When the first electrode 104 is an anode, the injection layer 110 may be a hole injection layer to help inject holes from the first electrode 104 into the light emitting layer 112. When the first electrode 104 is a cathode, the injection layer 110 may be an electron injection layer to help inject electrons from the first electrode 104 into the light emitting layer 112. The injection layer 110 may be electrically connected to or contact the first electrode 104 through the second opening OP2. In another embodiment, between the light emitting layer 112 and the second electrode 114, another implantation layer may be selectively formed between the light emitting layer 112 and the second electrode 114. When the second electrode 114 is an anode, the other injection layer may be a hole injection layer. When the second electrode 114 is a cathode, the other injection layer may be an electron injection layer. The electron injection layer may, for example, include an electron injection material and / or an electron transport material, and the hole injection layer may, for example, include a hole injection material and / or a hole transport material material. In another embodiment, an additional transparent conductive layer may be optionally formed between the transparent insulating pattern layer 106 and the implantation layer 110, but the invention is not limited thereto.

於本實施例中,於形成發光二極體LD之後,可選擇性於發光二極體LD上形成一保護層116,以形成本實施例的顯示裝置100。保護層116覆蓋發光二極體LD,用以保護發光二極體LD,特別是當發光二極體LD為有機發光二極體時,保護層116可避免發光二極體LD受到濕氣或氧氣的破壞。舉例而言,保護層116可包括有機材料、無機材料或有機材料與無機材料的堆疊。 In this embodiment, after the light emitting diode LD is formed, a protective layer 116 may be selectively formed on the light emitting diode LD to form the display device 100 of this embodiment. The protective layer 116 covers the light emitting diode LD to protect the light emitting diode LD. Especially when the light emitting diode LD is an organic light emitting diode, the protective layer 116 can prevent the light emitting diode LD from being exposed to moisture or oxygen. Destruction. For example, the protective layer 116 may include an organic material, an inorganic material, or a stack of an organic material and an inorganic material.

於本實施例中,第二電極114與第一電極104分別為顯示裝置100的兩電極端,用以電連接至一電源PW。當電源PW開啟,第二電極114與第一電極104之間施加有電壓時,顯示裝置100切換至圖案顯示模式,以顯示出靜態的第一圖案P1。並且,透過透明絕緣圖案層106的阻隔,電源所提供的電流必須流過第二開口OP2,因此發光二極體LD對應具有第一圖案P1的第二開口OP2的部分才會產生光線,使得發光二極體LD顯示出預先定義好的第一圖案P1。藉此,顯示裝置100可分別從第一表面S1與第二表面S2顯示出第一圖案P1。由於本實施例的基板102、發光二極體LD與保護層116均為透明的,因此電源關閉時,顯示裝置100可為透明的顯示裝置,也就是在未施加電壓於顯示裝置100時處於無圖案模式,且呈現透明狀態,使得使用者可觀看到顯示裝置100後方的景象。由此可知,本實施例的顯示裝置100具有可切換圖案顯示模式與無圖案模式的功用,因此可改善傳統紙張的限制,並提升顯示裝置100的應用範圍。舉例來說,顯示裝置100可在使用者剛開始使用時處於無圖案模式,而在使用者觸發特定動作時顯示裝置100進行圖案顯示模式以顯示出第一圖案P1,如此可提升使用者的使用感受。並且,本實施例的顯示裝置100僅包含發光二極體LD,且透過提供發光二極體LD電壓即可顯示出第一圖案P1,因此大大地降低顯示裝置100的成本以及操作的複雜度。顯示裝置100可例如為一名片、一展示解說牌、禮盒的上蓋或其他適合的產品。 In this embodiment, the second electrode 114 and the first electrode 104 are two electrode terminals of the display device 100, respectively, and are used to be electrically connected to a power source PW. When the power PW is turned on and a voltage is applied between the second electrode 114 and the first electrode 104, the display device 100 switches to the pattern display mode to display the static first pattern P1. In addition, through the blocking of the transparent insulating pattern layer 106, the current provided by the power source must flow through the second opening OP2, so that the light emitting diode LD portion corresponding to the second opening OP2 having the first pattern P1 will generate light and emit light. The diode LD shows a first pattern P1 that is defined in advance. Thereby, the display device 100 can display the first pattern P1 from the first surface S1 and the second surface S2, respectively. Since the substrate 102, the light-emitting diode LD, and the protective layer 116 of this embodiment are all transparent, the display device 100 may be a transparent display device when the power is turned off, that is, when the voltage is not applied to the display device 100, The pattern mode is transparent, so that the user can view the scene behind the display device 100. It can be known from this that the display device 100 of this embodiment has the function of switching the pattern display mode and the non-pattern mode, so the limitation of the traditional paper can be improved, and the application range of the display device 100 can be improved. For example, the display device 100 may be in a non-pattern mode when the user first starts using it, and the display device 100 performs a pattern display mode to display the first pattern P1 when the user triggers a specific action, so that the use of the user can be improved Feel. In addition, the display device 100 of this embodiment only includes the light emitting diode LD, and the first pattern P1 can be displayed by providing the light emitting diode LD voltage, thereby greatly reducing the cost and operation complexity of the display device 100. The display device 100 may be, for example, a tablet, a display card, a cover of a gift box, or other suitable products.

本發明的發光二極體並不以此為限。於另一實施例中,第一電極104可包括不透明導電材料,且第二電極114包括透明導電材料,因此發光二極體LD為單側發光。於此情況下,顯示裝置100係從其第一表面S1顯示出第一圖案P1。 於又一實施例中,第一電極104可包括透明導電材料,且第二電極包括不透明導電材料,因此發光二極體LD亦為單側發光。於此情況下,顯示裝置100係從其第二表面S2顯示出第一圖案P1。 The light-emitting diode of the present invention is not limited thereto. In another embodiment, the first electrode 104 may include an opaque conductive material, and the second electrode 114 includes a transparent conductive material, so the light emitting diode LD emits light on one side. In this case, the display device 100 displays the first pattern P1 from the first surface S1 thereof. In yet another embodiment, the first electrode 104 may include a transparent conductive material, and the second electrode includes an opaque conductive material, so the light emitting diode LD also emits light on one side. In this case, the display device 100 displays the first pattern P1 from the second surface S2 thereof.

值得一提的是,由於透明絕緣圖案層106的沉積品質與厚度決定透明絕緣圖案層106是否會有漏電的問題,也就是決定發光二極體LD能否清楚顯示出第一圖案P1,因此本實施例形成透明絕緣層106a的方式係使用原子層沉積製程、濺鍍製程或電子束蒸鍍製程,以維持透明絕緣圖案層106的品質,且透明絕緣圖案層106可具有一厚度,小於或等於100奈米。此外,於本實施例透明的顯示裝置100中,由於透明絕緣圖案層106具有第二圖案P2,因此顯示裝置100的透明度取決於透明絕緣圖案層106的可視度。透明絕緣圖案層106的厚度決定透明絕緣圖案層106的可視度(visibility),因此透明絕緣圖案層106的厚度較佳可小於或等於50奈米,使得使用者不易從外觀察覺透明絕緣圖案層106,藉此可提升顯示裝置100的透明度。不過,透明絕緣圖案層106的厚度亦會影響漏電,因此當透明絕緣圖案層106的厚度越薄時,形成透明絕緣層106a的方式較佳使用原子層沉積製程,以避免透明絕緣圖案層106產生漏電,並維持透明絕緣圖案層106的品質。舉例來說,在使用原子層沉積製程形成透明絕緣層106a的條件下,透明絕緣圖案層106的厚度可小於或等於30奈米。 It is worth mentioning that because the quality and thickness of the transparent insulating pattern layer 106 determines whether the transparent insulating pattern layer 106 will have a leakage problem, that is, whether the light-emitting diode LD can clearly display the first pattern P1, so this The embodiment forms the transparent insulating layer 106a by using an atomic layer deposition process, a sputtering process, or an electron beam evaporation process to maintain the quality of the transparent insulating pattern layer 106, and the transparent insulating pattern layer 106 may have a thickness that is less than or equal to 100 nanometers. In addition, in the transparent display device 100 of this embodiment, since the transparent insulating pattern layer 106 has the second pattern P2, the transparency of the display device 100 depends on the visibility of the transparent insulating pattern layer 106. The thickness of the transparent insulating pattern layer 106 determines the visibility of the transparent insulating pattern layer 106. Therefore, the thickness of the transparent insulating pattern layer 106 is preferably less than or equal to 50 nanometers, which makes it difficult for users to visually observe the transparent insulating pattern layer 106. Therefore, the transparency of the display device 100 can be improved. However, the thickness of the transparent insulating pattern layer 106 also affects the electrical leakage. Therefore, when the thickness of the transparent insulating pattern layer 106 is thinner, the method of forming the transparent insulating layer 106a preferably uses an atomic layer deposition process to avoid the occurrence of the transparent insulating pattern layer 106. Leakage, and maintain the quality of the transparent insulating pattern layer 106. For example, under the condition that the transparent insulating layer 106a is formed using an atomic layer deposition process, the thickness of the transparent insulating pattern layer 106 may be less than or equal to 30 nm.

下文將進一步比較原子層沉積製程、濺鍍製程與電子束蒸鍍製程所形成的透明絕緣圖案層106的可視度。第8圖為利用原子層沉積製程所形成的透明絕緣層與基板的穿透度與波長的關係示意圖,第9圖為利用濺鍍製程所形成的透明絕緣層與基板的穿透度與波長的關係示意圖,且第10圖為利用電子束蒸鍍製 程所形成的透明絕緣層與基板的穿透度與波長的關係示意圖,其中第8圖、第9圖與第10圖中的透明絕緣層106a的厚度以30奈米為例,且基板102以玻璃為例,但不以此為限。如第8圖、第9圖與第10圖所示,曲線L1代表基板102的穿透度與波長的關係曲線,曲線L2代表利用原子層沉積製程所形成的透明絕緣層106a的穿透度與波長的關係曲線,曲線L3代表利用濺鍍製程所形成的透明絕緣層106a的穿透度與波長的關係曲線,且曲線L4代表利用電子束蒸鍍製程所形成的透明絕緣層106a的穿透度與波長的關係曲線。依據曲線L1、曲線L2、曲線L3與曲線L4,當所形成的透明絕緣層106a在厚度為30奈米時,透過原子層沉積製程、濺鍍製程與電子束蒸鍍製程所形成的透明絕緣層106a的穿透度可接近基板102的穿透度,因此儘管透明絕緣圖案層106具有第二開口OP2,但透明絕緣圖案層106依然不易被使用者所觀看到。值得說明的是,透過原子層沉積製程、濺鍍製程與電子束蒸鍍製程所形成的透明絕緣層106在波長為550奈米時的穿透度可分別大於99%、98%與92%,且基板102在波長為550奈米時的穿透度可大於99%,因此透明絕緣圖案層106較佳透過原子層沉積製程形成。 Hereinafter, the visibility of the transparent insulating pattern layer 106 formed by the atomic layer deposition process, the sputtering process, and the electron beam evaporation process will be further compared. Fig. 8 is a schematic diagram showing the relationship between the transmittance and wavelength of the transparent insulating layer and the substrate formed by the atomic layer deposition process, and Fig. 9 is the transmittance and wavelength of the transparent insulating layer and the substrate formed by the sputtering process. Schematic diagram, and Figure 10 shows electron beam evaporation The relationship between the transmittance and wavelength of the transparent insulating layer formed by the substrate and the substrate is shown in FIG. 8, FIG. 9, and FIG. 10. The thickness of the transparent insulating layer 106 a in FIG. 8, FIG. 9, and FIG. Glass is an example, but not limited to this. As shown in FIGS. 8, 9 and 10, the curve L1 represents the relationship between the transmittance of the substrate 102 and the wavelength, and the curve L2 represents the transmittance of the transparent insulating layer 106 a formed by the atomic layer deposition process. Wavelength relationship curve, curve L3 represents the relationship between the transmittance and wavelength of the transparent insulating layer 106a formed by the sputtering process, and curve L4 represents the transmittance of the transparent insulating layer 106a formed by the electron beam evaporation process Curve with wavelength. According to the curve L1, curve L2, curve L3, and curve L4, when the formed transparent insulating layer 106a has a thickness of 30 nm, the transparent insulating layer formed by the atomic layer deposition process, the sputtering process, and the electron beam evaporation process is formed. The penetration of 106a can be close to the penetration of the substrate 102. Therefore, although the transparent insulating pattern layer 106 has the second opening OP2, the transparent insulating pattern layer 106 is still not easily seen by the user. It is worth noting that the transparency of the transparent insulating layer 106 formed by the atomic layer deposition process, the sputtering process, and the electron beam evaporation process at a wavelength of 550 nm can be greater than 99%, 98%, and 92%, respectively. In addition, the transmittance of the substrate 102 at a wavelength of 550 nm may be greater than 99%. Therefore, the transparent insulating pattern layer 106 is preferably formed through an atomic layer deposition process.

第11圖與第12圖繪示本發明第二實施例的顯示裝置的製作方法示意圖。本實施例的製作方法與上述第一實施例的製作方法的差異在於本實施例形成透明絕緣圖案層106的方式係直接圖案化透明絕緣層106a。具體來說,如第11圖所示,於提供基板102與第一電極104之後,直接於第一電極104上形成透明絕緣層106a。然後,如第12圖所示,對透明絕緣層106a進行圖案化製程,以於第一電極104上形成透明絕緣圖案層106。於本實施例中,圖案化製程可例如包括雷射雕刻製程或微影與蝕刻製程,但不限於此。本實施例於形成透明絕緣圖案層106之後的步驟係與第一實施例相同,因此在此不多贅述。 11 and 12 are schematic diagrams illustrating a method for manufacturing a display device according to a second embodiment of the present invention. The manufacturing method of this embodiment is different from the manufacturing method of the above-mentioned first embodiment in that the manner of forming the transparent insulating pattern layer 106 in this embodiment is to directly pattern the transparent insulating layer 106a. Specifically, as shown in FIG. 11, after the substrate 102 and the first electrode 104 are provided, a transparent insulating layer 106 a is directly formed on the first electrode 104. Then, as shown in FIG. 12, a patterning process is performed on the transparent insulating layer 106 a to form a transparent insulating pattern layer 106 on the first electrode 104. In this embodiment, the patterning process may include, for example, a laser engraving process or a lithography and etching process, but is not limited thereto. The steps after the transparent insulating pattern layer 106 is formed in this embodiment are the same as those in the first embodiment, so they are not described in detail here.

第13圖繪示本發明第三實施例的顯示裝置的製作方法示意圖。本實施例的製作方法與上述第一實施例的製作方法的差異在於本實施例形成透明絕 緣圖案層106的方式係利用網版印刷製程。具體來說,如第13圖所示,在提供基板102與第一電極104之後,於第一電極104上設置具有與第一圖案P1相同圖案的網版302,其中網版302可具有至少一第三開口OP3,且第三開口OP3曝露出第一電極104,並可具有與第一圖案P1互補的圖案。然後,於曝露出的第一電極104與網版302上形成一透明絕緣層106a。本實施例形成透明絕緣層106a的方法可與第一實施例相同,因此不多贅述。接著,移除網版302與位於網版302上的透明絕緣層106a,以形成透明絕緣圖案層106,如第6圖所示。本實施例於形成透明絕緣圖案層106之後的步驟係與第一實施例相同,因此在此不多贅述。 FIG. 13 is a schematic diagram of a manufacturing method of a display device according to a third embodiment of the present invention. The difference between the manufacturing method of this embodiment and the manufacturing method of the first embodiment is that the transparent insulation The pattern of the edge pattern layer 106 is a screen printing process. Specifically, as shown in FIG. 13, after the substrate 102 and the first electrode 104 are provided, a screen 302 having the same pattern as the first pattern P1 is disposed on the first electrode 104, where the screen 302 may have at least one The third opening OP3, and the third opening OP3 exposes the first electrode 104, and may have a pattern complementary to the first pattern P1. Then, a transparent insulating layer 106a is formed on the exposed first electrode 104 and the screen 302. The method for forming the transparent insulating layer 106a in this embodiment may be the same as that in the first embodiment, so it is not described in detail. Next, the screen 302 and the transparent insulating layer 106a on the screen 302 are removed to form a transparent insulating pattern layer 106, as shown in FIG. 6. The steps after the transparent insulating pattern layer 106 is formed in this embodiment are the same as those in the first embodiment, so they are not described in detail here.

本發明另提供一種應用上述任一實施例的顯示裝置的禮盒。第14圖繪示本發明第四實施例的禮盒在上蓋闔上時的側視示意圖,第15圖繪示本發明第四實施例的禮盒在上蓋掀開時的側視示意圖。本實施例的禮盒400包括一開口402,且顯示裝置404可覆蓋開口402,以在開口402處顯示出第一圖案P1。在本實施例中,禮盒400可包括一盒體406以及一上蓋408,盒體406可包括複數個側牆以及一底部,且側牆豎立於底部的邊緣上,並依序連接,使側牆與底部可構成一凹槽406R,用以容置一物件,例如禮物。此外,凹槽406R中亦可依據實際需求容置固定物件的固定結構或其他裝飾物件。上蓋408用以蓋合凹槽406R,使禮盒400可完整保護物件。盒體406與上蓋408可包括紙、塑料或其他適合的材料,且可由相同或不同的材料所構成。 The present invention further provides a gift box to which the display device of any one of the above embodiments is applied. FIG. 14 is a schematic side view of a gift box according to a fourth embodiment of the present invention when it is placed on an upper lid, and FIG. 15 is a schematic side view of a gift box according to a fourth embodiment of the present invention when the cover is opened. The gift box 400 in this embodiment includes an opening 402, and the display device 404 can cover the opening 402 to display the first pattern P1 at the opening 402. In this embodiment, the gift box 400 may include a box body 406 and an upper cover 408. The box body 406 may include a plurality of side walls and a bottom, and the side walls are erected on the edges of the bottom and connected in order to make the side walls A groove 406R may be formed with the bottom to receive an object, such as a gift. In addition, the groove 406R can also receive a fixed structure or other decorative object of the fixed object according to actual needs. The upper cover 408 is used to cover the groove 406R, so that the gift box 400 can completely protect the objects. The box body 406 and the upper cover 408 may include paper, plastic, or other suitable materials, and may be composed of the same or different materials.

本實施例的禮盒400可選擇性另包括一連接轉軸410,連接於上蓋408的側邊與盒體406其中一側牆的頂端之間,使上蓋408可掀起或闔上。於其他實施例中,上蓋408與盒體406亦可為一體成型。 The gift box 400 in this embodiment may optionally further include a connecting shaft 410 connected between the side of the upper cover 408 and the top of one side wall of the box body 406, so that the upper cover 408 can be lifted or closed. In other embodiments, the upper cover 408 and the box body 406 may be integrally formed.

本實施例的上蓋408可具有開口402,且顯示裝置404的邊緣可鑲嵌於上蓋408的開口402的側壁中,但本發明不限於此。依據實際的設計需求,顯示裝置404也可設置於上蓋408面對凹槽406R的內側上或上蓋408的外側上。於一些實 施例中,開口402也可設置於盒體406的其中至少一側牆或底部。於一些實施例中,顯示裝置404可為透明顯示裝置,以使位於禮盒400的外側的使用者得以透過顯示裝置404觀看到位於禮盒400內部中的物件。盒體406形狀不限為立方體形狀,可依據實際需求作對應調整。舉例來說,盒體406形狀也可為柱狀體、球體、橢圓體或其他適合的形狀。本實施例的顯示裝置404可適用上述任一實施例的顯示裝置。值得說明的是,本實施例的顯示裝置404可在上蓋408闔上時呈現透明狀態,而不顯示第一圖案P1,且在上蓋408掀開時顯示出第一圖案P1,以使收到禮盒的使用者不僅對禮物的好感之外,還可因第一圖案P1的顯示而感到驚喜,並可透過所顯示的第一圖案P1(例如文字描述)了解送禮者的心意。於一些實施例中,顯示裝置404顯示第一圖案的時間點可依實際需求而定,例如也可在上蓋408闔上時或使用者拿到禮盒時顯示第一圖案,而於掀開時呈現透明狀態,但不以此為限。 The upper cover 408 of this embodiment may have an opening 402, and an edge of the display device 404 may be embedded in a side wall of the opening 402 of the upper cover 408, but the present invention is not limited thereto. According to actual design requirements, the display device 404 may also be disposed on an inner side of the upper cover 408 facing the groove 406R or on an outer side of the upper cover 408. Some real In the embodiment, the opening 402 may also be provided on at least one side wall or bottom of the box body 406. In some embodiments, the display device 404 may be a transparent display device, so that a user located outside the gift box 400 can view the objects located inside the gift box 400 through the display device 404. The shape of the box body 406 is not limited to a cube shape, and can be adjusted according to actual needs. For example, the shape of the box body 406 may also be a columnar body, a sphere, an ellipsoid, or other suitable shapes. The display device 404 of this embodiment can be applied to the display device of any of the above embodiments. It is worth noting that the display device 404 in this embodiment may be transparent when the upper cover 408 is closed, instead of displaying the first pattern P1, and the first pattern P1 is displayed when the upper cover 408 is opened, so that a gift box is received. In addition to the good feelings of the gift, the user can be surprised by the display of the first pattern P1, and can understand the heart of the gift giver through the displayed first pattern P1 (such as a text description). In some embodiments, the time point at which the display device 404 displays the first pattern may be determined according to actual needs. For example, the first pattern may also be displayed when the upper cover 408 is closed or when the user receives the gift box, and may be displayed when opened. Transparent state, but not limited to this.

綜上所述,於本發明的顯示裝置的製作方法中,透過原子層沉積製程、濺鍍製程或電子束蒸鍍製程形成厚度小於或等於100奈米的透明絕緣圖案層,可使透明絕緣圖案層達到絕緣的效果,因此顯示裝置可具有可切換圖案顯示模式與無圖案模式的功用。再者,透過將透明絕緣圖案層的厚度降低至小於或等於50奈米,還可降低透明絕緣圖案層的可視度,以提升顯示裝置的透明度。 In summary, in the manufacturing method of the display device of the present invention, a transparent insulating pattern layer having a thickness of less than or equal to 100 nm is formed through an atomic layer deposition process, a sputtering process, or an electron beam evaporation process, so that the transparent insulating pattern can be made. The layer achieves the effect of insulation, so the display device can have the function of switching the pattern display mode and the non-pattern mode. Furthermore, by reducing the thickness of the transparent insulating pattern layer to 50 nm or less, the visibility of the transparent insulating pattern layer can also be reduced to improve the transparency of the display device.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the scope of patent application of the present invention shall fall within the scope of the present invention.

Claims (25)

一種顯示裝置,用以顯示一第一圖案,且該顯示裝置包括:一基板;以及一發光二極體,設置於該基板上,且該發光二極體包括:一第一電極;一透明絕緣圖案層,設置於該第一電極上,其中該透明絕緣圖案層具有一厚度,小於或等於100奈米,且該透明絕緣圖案層具有一第二圖案,與該第一圖案互補;一發光層,覆蓋於該透明絕緣圖案層與該第一電極上,且該發光層電連接該第一電極;以及一第二電極,設置於發光層上。 A display device is used to display a first pattern, and the display device includes: a substrate; and a light emitting diode disposed on the substrate, and the light emitting diode includes: a first electrode; a transparent insulation A pattern layer disposed on the first electrode, wherein the transparent insulating pattern layer has a thickness of less than or equal to 100 nm, and the transparent insulating pattern layer has a second pattern complementary to the first pattern; a light emitting layer Covering the transparent insulating pattern layer and the first electrode, and the light emitting layer is electrically connected to the first electrode; and a second electrode is disposed on the light emitting layer. 如請求項1所述的顯示裝置,其中該透明絕緣圖案層包括複數個開口,且該發光層透過該等開口與該第一電極電連接。 The display device according to claim 1, wherein the transparent insulating pattern layer includes a plurality of openings, and the light emitting layer is electrically connected to the first electrode through the openings. 如請求項2所述的顯示裝置,其中該等開口具有該第一圖案。 The display device according to claim 2, wherein the openings have the first pattern. 如請求項2所述的顯示裝置,其中該發光二極體另包括一注入層,夾設於該發光層與該透明絕緣圖案層之間。 The display device according to claim 2, wherein the light emitting diode further includes an injection layer sandwiched between the light emitting layer and the transparent insulating pattern layer. 如請求項1所述的顯示裝置,其中該透明絕緣圖案層的該厚度小於或等於30奈米。 The display device according to claim 1, wherein the thickness of the transparent insulating pattern layer is less than or equal to 30 nm. 如請求項1所述的顯示裝置,其中該透明絕緣圖案層包括氧化鋁 (Al2O3)、氧化鋡(HfO2)、氧化矽(SiO2)、氧化鈦(TiO2)、鈦酸鍶(SrTiO3)、氧化鉭(Ta2O5)、氧化釓(Gd2O3)、氧化鋯(ZrO2)、氧化鎵(Ga2O3)、氧化釩(V2O5)、氧化鈷(Co3O4)、氧化鋅(ZnO)、摻雜鋁之氧化鋅(ZnO:Al)、摻雜硼之氧化鋅(ZnO:B)、摻雜氫之氧化銦(In2O3:H)、氧化鎢(WO3)、氧化鉬(MoO3)、氧化鈮(Nb2O5)、氧化鎳(NiO)、氧化鎂(MgO)、氧化釕(RuO2)或上述任兩者之結合。 The display device according to claim 1, wherein the transparent insulating pattern layer includes aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), and strontium titanate (SrTiO 3 ), tantalum oxide (Ta 2 O 5 ), hafnium oxide (Gd 2 O 3 ), zirconium oxide (ZrO 2 ), gallium oxide (Ga 2 O 3 ), vanadium oxide (V 2 O 5 ), cobalt oxide (Co 3 O 4 ), zinc oxide (ZnO), aluminum-doped zinc oxide (ZnO: Al), boron-doped zinc oxide (ZnO: B), hydrogen-doped indium oxide (In 2 O 3 : H ), Tungsten oxide (WO 3 ), molybdenum oxide (MoO 3 ), niobium oxide (Nb 2 O 5 ), nickel oxide (NiO), magnesium oxide (MgO), ruthenium oxide (RuO 2 ), or a combination of any of the above . 如請求項1所述的顯示裝置,另包括一保護層,覆蓋於該發光二極體。 The display device according to claim 1, further comprising a protective layer covering the light-emitting diode. 如請求項1所述的顯示裝置,其中該第一圖案包括文字描述、徽章圖案或商標圖案。 The display device according to claim 1, wherein the first pattern comprises a text description, a badge pattern or a trademark pattern. 如請求項1所述的顯示裝置,其中該顯示裝置為一名片或一展示解說牌。 The display device according to claim 1, wherein the display device is a movie or a display card. 如請求項1所述的顯示裝置,其中該透明絕緣圖案層在波長為550奈米時的穿透度大於92%。 The display device according to claim 1, wherein the transparent insulating pattern layer has a transmittance of greater than 92% at a wavelength of 550 nm. 一種顯示裝置之製作方法,該顯示裝置用以顯示出一第一圖案,且該製作方法包括:提供一基板以及一第一電極,其中該第一電極形成於該基板上;於該第一電極上形成一透明絕緣圖案層,其中該透明絕緣圖案層具有一厚度,小於或等於100奈米,且該透明絕緣圖案層具有一第二圖案,與該第一圖案互補;形成一發光層覆蓋於該透明絕緣圖案層與該第一電極上,其中該發光層電連 接該第一電極;以及於該發光層上形成一第二電極,以形成一發光二極體。 A manufacturing method of a display device is used for displaying a first pattern, and the manufacturing method includes: providing a substrate and a first electrode, wherein the first electrode is formed on the substrate; and on the first electrode A transparent insulating pattern layer is formed thereon, wherein the transparent insulating pattern layer has a thickness of less than or equal to 100 nanometers, and the transparent insulating pattern layer has a second pattern complementary to the first pattern; forming a light-emitting layer covering the The transparent insulating pattern layer is on the first electrode, and the light emitting layer is electrically connected. Connected to the first electrode; and forming a second electrode on the light emitting layer to form a light emitting diode. 如請求項11所述的顯示裝置之製作方法,其中形成該透明絕緣圖案層包括:於該第一電極上形成一犧牲層;對該犧牲層進行一圖案化製程,以形成一犧牲圖案層,並曝露出該第一電極,其中該犧牲圖案層具有該第一圖案;於該犧牲圖案層與曝露出的該第一電極上形成一透明絕緣層;以及移除該犧牲圖案層與位於該犧牲圖案層上的該透明絕緣層,以形成該透明絕緣圖案層。 The method for manufacturing a display device according to claim 11, wherein forming the transparent insulating pattern layer comprises: forming a sacrificial layer on the first electrode; and performing a patterning process on the sacrificial layer to form a sacrificial pattern layer, And exposing the first electrode, wherein the sacrificial pattern layer has the first pattern; forming a transparent insulating layer on the sacrificial pattern layer and the exposed first electrode; and removing the sacrificial pattern layer and the sacrificial pattern layer The transparent insulating layer on the pattern layer to form the transparent insulating pattern layer. 如請求項12所述的顯示裝置之製作方法,其中該犧牲層包括光阻材料或膠布。 The method for manufacturing a display device according to claim 12, wherein the sacrificial layer comprises a photoresist material or a tape. 如請求項12所述的顯示裝置之製作方法,其中圖案化該犧牲層包括微影製程或雷射蝕刻製程。 The method for manufacturing a display device according to claim 12, wherein patterning the sacrificial layer includes a lithography process or a laser etching process. 如請求項12所述的顯示裝置之製作方法,其中形成該透明絕緣層包括原子層沉積製程、濺鍍製程或電子束蒸鍍製程。 The method for manufacturing a display device according to claim 12, wherein forming the transparent insulating layer includes an atomic layer deposition process, a sputtering process, or an electron beam evaporation process. 如請求項11所述的顯示裝置之製作方法,其中形成該透明絕緣圖案層包括:於該第一電極上形成一透明絕緣層;以及 對該透明絕緣層進行一圖案化製程,以形成一透明絕緣圖案層。 The method for manufacturing a display device according to claim 11, wherein forming the transparent insulating pattern layer comprises: forming a transparent insulating layer on the first electrode; and A patterning process is performed on the transparent insulating layer to form a transparent insulating pattern layer. 如請求項16所述的顯示裝置之製作方法,其中該圖案化製程包括雷射雕刻製程。 The method for manufacturing a display device according to claim 16, wherein the patterning process includes a laser engraving process. 如請求項11所述的顯示裝置之製作方法,其中形成該透明絕緣圖案層包括:於該第一電極上設置一網版;於該第一電極與該網版上形成一透明絕緣層;以及移除該網版與位於該網版上的該透明絕緣層,以形成該透明絕緣圖案層。 The method for manufacturing a display device according to claim 11, wherein forming the transparent insulating pattern layer comprises: providing a screen plate on the first electrode; forming a transparent insulating layer on the first electrode and the screen plate; and The screen and the transparent insulating layer on the screen are removed to form the transparent insulating pattern layer. 如請求項11所述的顯示裝置之製作方法,另包括於該發光二極體上形成一保護層,且該保護層覆蓋該發光二極體。 The method for manufacturing a display device according to claim 11, further comprising forming a protective layer on the light-emitting diode, and the protective layer covers the light-emitting diode. 如請求項11所述的顯示裝置之製作方法,其中該透明絕緣圖案層包括至少一開口,且該發光層透過該開口與該第一電極電連接。 The method for manufacturing a display device according to claim 11, wherein the transparent insulating pattern layer includes at least one opening, and the light-emitting layer is electrically connected to the first electrode through the opening. 如請求項20所述的顯示裝置之製作方法,另包括於形成該透明絕緣圖案層與形成該發光層之間,形成一注入層覆蓋於該透明絕緣圖案層與該第一電極上。 The method for manufacturing a display device according to claim 20, further comprising forming an implanted layer covering the transparent insulating pattern layer and the first electrode between the transparent insulating pattern layer and the light emitting layer. 一種禮盒,包括:一盒體,具有一凹槽,用以容置一物件,且該盒體包括複數個側牆以及一底部; 一上蓋,用以蓋合該盒體的該凹槽,且該等側牆、該底部與該上蓋的其中至少一個具有一開口;以及一顯示裝置,覆蓋該開口,並用以顯示一第一圖案,且該顯示裝置包括:一基板;以及一發光二極體,設置於該基板上,且該發光二極體包括:一第一電極;一透明絕緣圖案層,設置於該第一電極上,其中該透明絕緣圖案層具有一厚度,小於或等於100奈米,且該透明絕緣圖案層具有一第二圖案,與該第一圖案互補;一發光層,覆蓋於該透明絕緣圖案層與該第一電極上,且該發光層電連接該第一電極;以及一第二電極,設置於發光層上。 A gift box includes: a box body having a groove for accommodating an object, and the box body includes a plurality of side walls and a bottom; An upper cover for covering the groove of the box body, and at least one of the side walls, the bottom and the upper cover has an opening; and a display device covering the opening and for displaying a first pattern And the display device includes: a substrate; and a light emitting diode disposed on the substrate, and the light emitting diode includes: a first electrode; a transparent insulating pattern layer disposed on the first electrode, The transparent insulating pattern layer has a thickness of less than or equal to 100 nanometers, and the transparent insulating pattern layer has a second pattern that is complementary to the first pattern. A light-emitting layer covers the transparent insulating pattern layer and the first layer. An electrode, and the light-emitting layer is electrically connected to the first electrode; and a second electrode, which is disposed on the light-emitting layer. 如請求項22所述的禮盒,其中該上蓋具有該開口。 The gift box of claim 22, wherein the upper cover has the opening. 如請求項23所述的禮盒,另包括一連接轉軸,連接於該上蓋的側邊與該盒體的側牆的頂端之間。 The gift box according to claim 23, further comprising a connecting shaft connected between a side edge of the upper cover and a top end of a side wall of the box body. 如請求項22所述的禮盒,其中該顯示裝置為一透明顯示裝置,以使位於該禮盒的外側的使用者得以透過該顯示裝置觀看到該禮盒的內部。 The gift box according to claim 22, wherein the display device is a transparent display device, so that a user located outside the gift box can view the inside of the gift box through the display device.
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TWM321784U (en) * 2004-12-07 2007-11-11 Sheng-Wang Yang Pill box timer
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