TWI669567B - Fine metal mask and method for making the same - Google Patents

Abstract

A fine metal mask with a central pattern and a reinforced frame. The central pattern portion has a mask pattern. The reinforcing outer frame is connected to the outer edge of the central pattern portion. The thickness of the reinforced outer frame is greater than the thickness of the central pattern portion, and the fine metal mask is made by an electroforming process. A method for manufacturing a fine metal mask has the following steps: sputtering to form a metal layer on a glass substrate, electroforming to form a central pattern portion and strengthening the outer frame on the metal layer, and removing the metal layer and the glass substrate to obtain fine Metal cover. Fine metal masks are less prone to deflection, have a long life and are beneficial for improving OLED yield.

Description

Fine metal mask and its preparation method

The present invention relates to a fine metal mask and a method of making same.

Organic Light-Emitting Diode (OLED) is widely used in e-books, mobile phones, monitors, etc. due to its self-illumination, wide viewing angle, power saving, high efficiency, reaction time and light weight. in. The OLED includes a glass substrate, an organic light emitting material layer, and an electrode layer. The organic light emitting material layer is disposed on the glass substrate, and the electrode layer is disposed on the organic light emitting material layer. Wherein, the organic light-emitting material layer is formed on the glass substrate by vapor deposition, and the mask pattern of the fine metal mask used in the vapor deposition not only determines the arrangement position of the organic light-emitting material layer on the glass substrate, but also determines The size, fineness, and the like of the organic light-emitting material layer, thereby affecting the pixel height of the OLED display.

In order to improve the pixels of an OLED display, a conventional technique uses a Fine Metal Mask (FMM) to form an organic light-emitting material layer in an evaporation process. The manufacturing method of the fine metal mask of the prior art is divided into an etching method and an electroforming method. Due to the disadvantages of etching, such as over-etching and mask passivation, the position of the mask pattern of the fine metal mask made by electroforming can be more accurate and the aperture precision can reach several micrometers (μm). ).

However, the thickness of the fine metal mask made by electroforming is relatively thin, the overall structural strength is weak, and it is easy to be deflected by an external force, so that the mask pattern cannot be accurately aligned with the position where the organic light-emitting material layer is predetermined. Problems that in turn affect the service life of fine metal masks and the yield of OLED displays.

The invention provides a fine metal mask, which is not easy to be deflected by external force, has a long service life and can improve the yield of the OLED display.

The invention further provides a method for manufacturing a fine metal mask, wherein the prepared fine metal mask is not easy to be deflected by an external force, has a long service life and can improve the yield of the OLED display.

To achieve one or more of the above objectives, the present invention provides a fine metal mask comprising a central pattern portion and a reinforced outer frame. The central pattern portion has a mask pattern. The reinforcing outer frame is connected to the outer edge of the central pattern portion. The thickness of the reinforced outer frame is greater than the thickness of the central pattern portion, and the fine metal mask is made by an electroforming process.

In an embodiment of the invention, the central pattern portion further includes a first central portion of the first electroformed layer, the mask pattern is formed on the first central portion, and the reinforcing outer frame further includes the first electroformed layer. a first peripheral portion and a second electroformed layer, wherein the first peripheral portion is adjacent to the first central portion, the second electroformed layer is disposed on the first peripheral portion, and the second electroformed layer and the first central portion are A through hole is formed, and the through hole communicates with the mask pattern.

In an embodiment of the invention, the reinforcing outer frame further includes a third electroformed layer, the second electroformed layer further includes a second central portion and a second peripheral portion, and the second peripheral portion is adjacent to the second central portion. The third electroformed layer is disposed on the second peripheral portion, and a through hole is formed between the third electroformed layer and the second central portion, and the through hole communicates with the through hole.

In an embodiment of the invention, the material of the fine metal mask is selected from the group consisting of iron, cobalt, nickel, and an alloy of at least two of the foregoing.

In order to achieve the above or a plurality of purposes, the fine metal mask provided by the present invention comprises: sputtering to form a metal layer on a glass substrate; and electroforming to form a central pattern portion and reinforcing the outer frame on the metal layer, The metal layer and the glass substrate are removed to obtain a fine metal mask. The reinforcing outer frame is connected to the outer edge of the central pattern portion, the central pattern portion has a mask pattern, the thickness of the reinforcing outer frame is greater than the thickness of the central pattern portion, and the fine metal mask includes a central pattern portion and a reinforcing outer frame.

In an embodiment of the invention, the electroforming comprises forming a central pattern portion and reinforcing the outer frame on the metal layer, and removing the metal layer and the glass substrate to obtain a fine metal mask, further comprising: on the metal layer Forming a first patterned photoresist layer, the first patterned photoresist layer exposing a first predetermined electroforming surface of the metal layer; the first electroformed layer is electroformed on the first predetermined electroforming surface, the first electroformed layer a first central portion and a first peripheral portion adjacent to the first central portion, the first central portion being coupled to the first patterned photoresist layer, the first peripheral portion having a second predetermined electroformed surface; Forming a second patterned photoresist layer on the central portion and the first patterned photoresist layer, wherein the second patterned photoresist layer exposes a second predetermined electroforming surface; and electroforming on the second predetermined electroforming surface a second electroformed layer; and removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer, and the glass substrate to obtain a fine metal mask. Wherein, after the first patterned photoresist layer is removed, a mask pattern is formed on the first central portion, and after the second patterned photoresist layer is removed, a through hole is formed between the second electroformed layer and the first central portion. The through hole communicates with the mask pattern, the central pattern portion further includes a first central portion of the first electroformed layer, and the strengthened outer frame further includes a first peripheral portion and a second electroformed layer of the first electroformed layer.

In an embodiment of the invention, the step of removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain a fine metal mask, further includes: a patterned photoresist layer, a second patterned photoresist layer is removed and the first protective film is overlaid on the second electroformed layer and the first electroformed layer is adjacent to one side of the second electroformed layer; and the metal layer is And removing the glass substrate and covering the first electroforming layer on the side of the first electroformed layer away from the second electroformed layer to obtain a fine metal mask between the first protective film and the second protective film.

In an embodiment of the invention, the second electroformed layer further has a second central portion and a second peripheral portion adjacent to the second central portion, and the second central portion is connected to the second patterned photoresist layer. The second peripheral portion has a third predetermined electroformed surface. The step of electroforming a central pattern portion and reinforcing the outer frame on the metal layer, and removing the metal layer and the glass substrate to obtain a fine metal mask further comprises: forming on the second central portion and the second patterned photoresist layer a third patterned photoresist layer, wherein the third patterned photoresist layer exposes a third predetermined electroformed surface; and electroformed on the third predetermined electroformed surface to form a third electroformed layer. The step of removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer and the glass substrate to obtain a fine metal mask further comprises: first patterning the photoresist layer, and second patterning the photoresist The layer, the third patterned photoresist layer, the metal layer, and the glass substrate are removed to obtain a fine metal mask. Wherein, after the third patterned photoresist layer is removed, a through hole is formed between the third electroformed layer and the second central portion, and the through hole communicates with the through hole, and the strengthened outer frame further includes a third electroformed layer.

In an embodiment of the invention, the first patterned photoresist layer, the second patterned photoresist layer, the third patterned photoresist layer, the metal layer and the glass substrate are removed to obtain a fine metal mask. The step of removing the first patterned photoresist layer, the second patterned photoresist layer and the third patterned photoresist layer and covering the first protective film to the third electroformed layer and the second electroforming The layer and the first electroformed layer are adjacent to one side of the second electroformed layer; and the metal layer and the glass substrate are removed and the second protective film is covered over the first electroformed layer away from the second electroformed layer and the third One side of the electroformed layer is obtained to obtain a fine metal mask between the first protective film and the second protective film.

In the method of manufacturing the fine metal mask and the fine metal mask of the present invention, since the reinforcing outer frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforcing outer frame is larger than the thickness of the central pattern layer, the central pattern portion can be used or It is flat and not flexible during handling, and the mask pattern can be precisely aligned with the predetermined position of the organic light-emitting material layer after multiple uses. Therefore, the use of the fine metal mask of the present invention is long and advantageous for improving the yield of the OLED display.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

1 is a schematic view of a fine metal mask in accordance with an embodiment of the present invention. Referring to FIG. 1 , the fine metal mask 100 of the present embodiment includes a central pattern portion 110 and a reinforcing outer frame 120 . The central pattern portion 110 has a mask pattern 111 , and the reinforcing outer frame 120 is connected to the outer edge of the central pattern portion 110 , and The thickness T1 of the reinforcing outer frame 120 is greater than the thickness T2 of the central pattern portion 110, and the fine metal mask 100 is made by electroforming technology.

The central pattern portion 110 may further include a first central portion 210 of the first electroformed layer 200. The mask pattern 111 is formed on the first central portion 210, and the reinforcing outer frame 120 may further include the first electroformed layer 200. The first peripheral portion 220 and the second electroformed layer 300, the first peripheral portion 220 is adjacent to the first central portion 210, and the second electroformed layer 300 is stacked on the first peripheral portion 220, and the second electroformed layer A through hole 310 is formed between the 300 and the first central portion 210, and the through hole 310 communicates with the mask pattern 111. In this embodiment, the total thickness of the first peripheral edge portion 220 and the second electroformed layer 300 may be the thickness T1 of the reinforcing outer frame 120, and the thickness of the first central portion 210 may be the thickness T2 of the central pattern portion 110. In addition, the aperture D1 of the mask pattern 111 may be smaller than the aperture D2 of the through hole 310. For example, the aperture D1 of the mask pattern 111 may be, for example, 25 μm, and the aperture D2 of the through hole 310 may be, for example, 80 μm, but not This is limited.

In the fine metal mask 100 of the present embodiment, the mask pattern 111 of the central pattern portion 110 can be used to fabricate an organic light emitting material layer of the OLED, since the reinforcing outer frame 120 is connected to the outer edge of the central pattern portion 110, and the outer frame 120 is strengthened. The thickness is greater than the thickness of the central pattern layer, so that the overall structural strength of the fine metal mask 100 can be improved, and the central pattern portion 110 can be prevented from being deflected by external force during use or handling, so that the central pattern portion 110 can be maintained flat, and the mask can be maintained. The pattern 111 can still be precisely aligned with a predetermined set position of the organic light-emitting material layer after multiple uses. Therefore, the fine metal mask 100 of the present embodiment not only has a long service life and is advantageous for improving the yield of the OLED display. In addition, the fine metal mask 100 of the embodiment is made by electroforming, so the position of the mask pattern 111 is accurate and the aperture precision can reach several micrometers, and there is no problem of sewage treatment and etching solution management as the etching method. .

2 is a flow chart of a method of fabricating a fine metal mask according to an embodiment of the present invention. Referring to FIG. 2, the method for manufacturing the fine metal mask of the embodiment includes: step S100: sputtering to form a metal layer on the glass substrate; and step S200: electroforming to form a central pattern portion and reinforcing the outer frame on the metal layer, and The metal layer and the glass substrate are removed to obtain a fine metal mask. The fine metal mask of the present embodiment can be fabricated to produce a fine metal mask 100 as shown in FIG.

FIG. 3 is a flow chart showing a step S200 of the method of manufacturing the fine metal mask of FIG. Referring to FIGS. 2 and 3, step S200 may further include: step S210: forming a first patterned photoresist layer on the metal layer; and step S220: electroforming to form the first electroformed layer on the first predetermined electroforming surface of the metal layer Step S230: forming a second patterned photoresist layer on the first central portion of the first electroformed layer and the first patterned photoresist layer; and step S240: electroforming to form the second electroformed layer on the first electroforming a second predetermined electroforming surface of the layer; and step S250: removing the first patterned photoresist layer, the second patterned photoresist layer, the metal layer, and the glass substrate to obtain a fine metal mask.

FIG. 4A is a schematic diagram corresponding to step S100 of FIG. 2. Referring to FIGS. 2 and 4A, in step S100, the metal layer 500 is formed on the glass substrate 510 by sputtering. The material of the metal layer 500 may be, for example but not limited to, conductive metals such as copper, platinum, gold, and silver. The material of the substrate 510 can be, for example, but not limited to, tin oxyfluoride, indium tin oxide or antimony. The metal layer 500 can be formed on the glass substrate 510 by sputtering, such as direct current sputtering, radio frequency sputtering or three-pole sputtering. The sputtering method is not limited in the present invention.

FIG. 4B is a schematic diagram corresponding to step S210 of FIG. Referring to FIGS. 3 and 4B, in step S210, the first patterned photoresist layer 600 is formed on the metal layer 500, and the first patterned photoresist layer 600 exposes the first predetermined electroforming surface 501 of the metal layer 500; In the present embodiment, the first patterned photoresist layer 600 is a dry film photoresist, but is not limited thereto; in other embodiments, the first patterned photoresist layer 600 may also be a wet film photoresist. In addition, in the embodiment, the first patterned photoresist layer 600 is a positive photoresist, but is not limited thereto. In other embodiments, the first patterned photoresist layer 600 may also be a negative photoresist.

FIG. 4C is a schematic diagram corresponding to step S220 of FIG. Referring to FIGS. 3 and 4C, in step S220, the first electroformed layer 200 is formed on the first predetermined electroforming surface 501 by electroforming. The first electroformed layer 200 has a first central portion 210 and is adjacent to the first A first peripheral portion 220 of the central portion 210, the first central portion 210 is coupled to the first patterned photoresist layer 600, and the first peripheral portion 220 has a second predetermined electroformed surface 221. The material of the first electroformed layer 200 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. In addition, the thickness T2 of the first electroformed layer 200 may be, for example, 3 μm to 5 μm, and further, for example, 4 μm, but not limited thereto.

FIG. 4D is a schematic diagram corresponding to step S230 of FIG. Referring to FIGS. 3 and 4D , in step S230 , the second patterned photoresist layer 610 is formed on the first central portion 210 of the first electroformed layer 200 and the first patterned photoresist layer 600 . The second patterned photoresist layer 610 exposes a second predetermined electroformed surface 221. In this embodiment, the second patterned photoresist layer 610 is a dry film photoresist, but is not limited thereto; in other embodiments, the second patterned photoresist layer 610 may also be a wet film photoresist. In addition, in the embodiment, the second patterned photoresist layer 610 is a positive photoresist, but is not limited thereto. In other embodiments, the second patterned photoresist layer 610 may also be a negative photoresist.

4E is a schematic diagram corresponding to step S240 of FIG. Referring to FIGS. 3 and 4E, in step S240, a second electroformed layer 300 is formed on the second predetermined electroformed surface 221 of the first electroformed layer 200 by electroforming. The material of the second electroformed layer 300 may be, for example, an alloy of at least two of iron, cobalt, nickel or XX. In addition, the total thickness T1 of the second electroformed layer 300 and the first peripheral edge portion 220 may be, for example, 50 μm to 100 μm, and further, for example, 75 μm, but not limited thereto. The thickness T2 of the first electroformed layer 200 may be equal to the thickness of the first peripheral edge portion 220.

FIG. 4F is a schematic diagram corresponding to step S250 of FIG. Referring to FIGS. 1 , 3 , 4E and 4F , in step S250 , after removing the first patterned photoresist layer 600 , the second patterned photoresist layer 610 , the metal layer 500 , and the glass substrate 510 , fine metal is obtained. Mask 100. After the first patterned photoresist layer 600 is removed, the mask pattern 111 is formed on the first central portion 210, and the second patterned photoresist layer 610 is removed to form the through hole 310 in the second electroformed layer 300 and the first Between the central portions 210, the through holes 310 communicate with the mask pattern 111, and the fine metal mask 100 may include the first electroformed layer 200, the second electroformed layer 300, the through holes 310, and the mask pattern 111; further, The central pattern portion 110 further includes a first central portion 210, and the reinforcing outer frame 120 further includes a first peripheral portion 220 and a second electroformed layer 300, and the second electroformed layer 300 is stacked on the first peripheral portion 220. on. Further, the mask pattern 111 may be, for example, a regular shape such as a rectangle, a rhombus, a circle, or a polygon, but may have an irregular shape. The shape and aperture of the mask pattern 111 are not limited in the present invention.

In addition, in the method of fabricating the fine metal mask of the embodiment, the first patterned photoresist layer 600 can be obtained by, for example, lithography, exposing the photoresist and developing the exposed photoresist; similarly, the second pattern The photoresist layer 610 can also be obtained by lithography, but the invention is not limited thereto.

FIG. 5 is a flow chart showing a step S250 of the method of manufacturing a fine metal mask according to an embodiment of the present invention. Referring to FIG. 5, step S250 may further include: step S251: removing the first patterned photoresist layer and the second patterned photoresist layer and covering the first protective film adjacent to the second electroformed layer and the first electroformed layer On one side of the second electroformed layer; and step S252: removing the metal layer and the glass substrate and covering the second protective film on the side of the first electroformed layer away from the second electroformed layer to obtain a fine metal mask Between the first protective film and the second protective film.

6A and 6B are schematic views corresponding to steps S251 and S252 of Fig. 5. Referring to FIGS. 4E, 5, 6A, and 6B, in step S251, the first patterned photoresist layer 600 and the second patterned photoresist layer 610 are removed to form a through hole 310 and a mask pattern 111, and then a protective film 700 covering the first electroconductive layer 700 and the first electroforming layer 200 adjacent to one side of the second electroforming layer 300, and closing the end of the through hole 310 away from the mask pattern 111; After the metal layer 500 and the glass substrate 510 are removed, the second protective film 710 is covered on the side of the first electroformed layer 200 away from the second electroformed layer 300. The mask pattern 111 can be closed away from the through hole. One end of 310 is obtained to obtain a fine metal mask 100 between the first protective film 700 and the second protective film 710. In addition, the first protective film 700 and the second protective film 710 may be, for example, a photocurable film, but not limited thereto.

In the manufacturing method of the fine metal mask of the embodiment, by covering the first protective film 700 and the second protective film 710 on the fine metal mask 100, the fine metal mask 100 can be protected from dust or abrasion. .

Figure 7 is a schematic illustration of a fine metal mask in accordance with one embodiment of the present invention. Referring to FIG. 7 , in the fine metal mask 100 of the embodiment, the reinforcing outer frame 120 may further include a third electroformed layer 400 , and the second electroformed layer 300 may further include a second central portion 320 and a second peripheral portion 330 . The second peripheral portion 330 is adjacent to the second central portion 320. The third electroformed layer 400 is stacked on the second peripheral portion 330. The through hole 410 is formed between the third electroformed layer 400 and the second central portion 320. The hole 410 is in communication with the through hole 310. In the present embodiment, the thickness T1 of the reinforcing outer frame 120 is the total thickness of the third electroformed layer 400, the second peripheral edge portion 330, and the first peripheral edge portion 220. Further, the aperture D2 of the through hole 310 is smaller than the aperture D3 of the through hole 410.

FIG. 8 is a flow chart showing a step S200 of the method of manufacturing a fine metal mask according to an embodiment of the present invention. Referring to FIG. 8 , in the method of manufacturing the fine metal mask of the embodiment, step S200 may further include: step S260: forming a third patterned photoresist layer on the second electroformed layer and the step S240. And patterning the photoresist layer; and step S270: electroforming to form a third electroformed layer on the third predetermined electroformed surface of the second peripheral portion of the second electroformed layer. The fine metal mask of this embodiment can be fabricated to produce a fine metal mask 100 as shown in FIG.

Fig. 9A is a schematic view corresponding to step S240 of Fig. 8. Referring to FIGS. 8 and 9A, in step S240, the second electroformed layer 300 further has a second central portion 320 and a second peripheral portion 330 adjacent to the second central portion 320. The second central portion 320 and the second pattern The photoresist layer 610 is connected, and the second peripheral portion 330 has a third predetermined electroformed surface 331. In addition, the thickness of the first electroformed layer 200 (ie, the thickness T2 of the first electroformed layer 200) may be, for example, 3 μm to 5 μm, and further, for example, 5 μm, but not limited thereto. The total thickness T3 of the second electroformed layer 300 and the first peripheral edge portion 220 may be, for example, 20 μm to 100 μm, and further, for example, 30 μm, but not limited thereto.

FIG. 9B is a schematic diagram corresponding to step S260 of FIG. Referring to FIGS. 8 and 9B , in step S260 , the third patterned photoresist layer 620 is formed on the second central portion 320 and the second patterned photoresist layer 610 of the second electroformed layer 300 . The third patterned photoresist layer 620 exposes a third predetermined electroformed surface 331. In the present embodiment, the third patterned photoresist layer 620 is a dry film photoresist, but is not limited thereto; in other embodiments, the third patterned photoresist layer 620 may also be a wet film photoresist. In addition, in the embodiment, the third patterned photoresist layer 620 is a positive photoresist, but not limited thereto. In other embodiments, the third patterned photoresist layer 620 may also be a negative photoresist.

Fig. 9C is a schematic view corresponding to step S270 of Fig. 8. Referring to FIGS. 8 and 9C, in step S270, the third electroformed layer 400 is formed on the third predetermined electroformed surface 331 of the second electroformed layer 300 by electroforming. The material of the third electroformed layer 400 may be, for example, iron, cobalt, nickel, or an alloy of at least two of the foregoing. In addition, the total thickness of the third electroformed layer 400, the second peripheral portion 330, and the first peripheral portion 220 (ie, the thickness T1 of the reinforcing bezel 120) may be, for example, 50 μm to 100 μm, but not limited thereto.

FIG. 9D is a schematic diagram corresponding to step S250 of FIG. Referring to FIGS. 7 , 8 , 9C and 9D , in step S250 , the first patterned photoresist layer 600 , the second patterned photoresist layer 610 , the third patterned photoresist layer 620 , the metal layer 500 , and the glass substrate are used. After the 510 is removed, the fine metal mask 100 is obtained. After the third patterned photoresist layer 620 is removed, the through hole 410 is formed between the third electroformed layer 400 and the second central portion 320, and the through hole 410 is communicated with the through hole 310. The reinforcing outer frame 120 may further include a third hole. Electroformed layer 400.

In addition, in the method of fabricating the fine metal mask of the embodiment, the first patterned photoresist layer 600 can be obtained by using a lithography technique to expose the photoresist and develop the exposed photoresist; for the same reason, the second The patterned photoresist layer 610 and the third patterned photoresist layer 620 can also be obtained by lithography, but the invention is not limited thereto.

In the manufacturing method of the fine metal mask 100 of the present embodiment, the first electroformed layer 200 having a relatively thin thickness is formed first, and then the second electroformed layer 300 and the third electroformed layer having a relatively thick thickness are formed in a thickened manner. Layer 400 is used to obtain reinforced outer frame 120. Wherein, since the mask pattern 111 is formed on the first central portion 210 of the first electroformed layer 200 which is formed first and has a relatively small thickness, the position, shape and aperture of the mask pattern 111 can be precisely controlled, and Helps improve the yield of OLED displays.

FIG. 10 is a flow chart showing a step S250 of the method of manufacturing a fine metal mask according to an embodiment of the present invention. Referring to FIG. 10, step S250 may further include: step S251a: removing the first patterned photoresist layer, the second patterned photoresist layer, and the third patterned photoresist layer, and covering the first protective film in the third The electroformed layer, the second electroformed layer and the first electroformed layer are adjacent to one side of the second electroformed layer; and step S252a: removing the metal layer and the glass substrate and covering the second protective film away from the first electroformed layer On one side of the second electroformed layer and the third electroformed layer, a fine metal mask is obtained between the first protective film and the second protective film.

11A and 11B are schematic views corresponding to steps S251a and S252a of Fig. 10. Referring to FIGS. 9C , 10 , 11A and 11B , in step S250 , the first patterned photoresist layer 600 , the second patterned photoresist layer 610 and the third patterned photoresist layer 620 are removed to form a through hole. 410, the through hole 310 and the mask pattern 111, and then the first protective film 700 covers the third electroformed layer 400, the second electroformed layer 300, and the first electroformed layer 200 is adjacent to one of the second electroformed layers 300. The side of the through hole 410 is closed away from the end of the mask pattern 111 and the through hole 310. In step S252, after the metal layer 500 and the glass substrate 510 are removed, the second protective film 710 is covered on the first electroformed layer 200. Aside from one side of the second electroformed layer 300 and the third electroformed layer 400, one end of the mask pattern 111 away from the through hole 310 can be closed, thereby obtaining the fine metal mask 100 on the first protective film 700 and the second protective film. Between 710. In addition, the first protective film 700 and the second protective film 710 may be, for example, a photocurable film, but not limited thereto.

In the manufacturing method of the fine metal mask of the embodiment, by covering the first protective film 700 and the second protective film 710 on the fine metal mask 100, the advantage of protecting the fine metal mask 100 from dust or abrasion can be achieved.

In summary, in the method of manufacturing the fine metal mask and the fine metal mask of the embodiment of the present invention, since the reinforcing outer frame is connected to the outer edge of the central pattern portion, and the thickness of the reinforcing outer frame is greater than the thickness of the central pattern layer, The central pattern portion can be kept flat and not flexible during use or handling. The mask pattern can be accurately aligned with the predetermined position of the organic luminescent material layer after multiple uses, thereby facilitating the improvement of the yield of the OLED display. And the fine metal mask is made by electroforming, so the position of the mask pattern is accurate and the aperture precision can reach several micrometers, and there is no problem of sewage treatment and etching solution management like etching.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims. In addition, the terms "first" and "second" as used in the specification or the scope of the patent application are used only to name the elements or to distinguish different embodiments or ranges, and are not intended to limit the number of elements. Upper or lower limit.

100‧‧‧Fine metal mask

110‧‧‧Central Pattern Department

111‧‧‧ mask pattern

120‧‧‧Enhanced frame

200‧‧‧First electroformed layer

210‧‧‧ First Central Department

220‧‧‧First Week

221‧‧‧Second predetermined electroformed surface

300‧‧‧Second electroforming layer

310‧‧‧through holes

320‧‧‧ Second Central Department

330‧‧‧Second Weekly Department

331‧‧‧ Third predetermined electroforming surface

400‧‧‧ Third electroformed layer

410‧‧‧through hole

500‧‧‧metal layer

501‧‧‧First scheduled electroforming surface

510‧‧‧ glass substrate

600‧‧‧First patterned photoresist layer

610‧‧‧Second patterned photoresist layer

620‧‧‧ Third patterned photoresist layer

700‧‧‧First protective film

710‧‧‧Second protective film

T1, T2, T3‧‧‧ thickness

D1, D2, D3‧‧‧ aperture

S100, S200, S210, S220, S230, S240, S250, S251, S251a, S252, S252a, S260, S270‧‧ steps

1 is a schematic view of a fine metal mask according to an embodiment of the present invention; FIG. 2 is a flow chart of a method for manufacturing a fine metal mask according to an embodiment of the present invention; and FIG. 3 is a step S200 of the method for manufacturing a fine metal mask of FIG. Figure 4A is a schematic diagram corresponding to step S100 of Figure 2; Figure 4B is a schematic diagram corresponding to step S210 of Figure 3; Figure 4C is a schematic diagram corresponding to step S220 of Figure 3; Figure 4D corresponds to Figure 3 FIG. 4E is a schematic diagram corresponding to step S240 in FIG. 3; FIG. 4F is a schematic diagram corresponding to step S250 in FIG. 3; FIG. 5 is a step S250 of a method for manufacturing a fine metal mask according to an embodiment of the present invention; Figure 6A is a schematic diagram corresponding to step S251 of Figure 5; Figure 6B is a schematic diagram corresponding to step S252 of Figure 5; Figure 7 is a schematic view of a fine metal mask according to an embodiment of the present invention; FIG. 9A is a schematic diagram corresponding to step S240 of FIG. 8; FIG. 9B is a schematic diagram corresponding to step S260 of FIG. 8; FIG. 9C is a diagram corresponding to the figure; a schematic diagram of step S270 in 8; 9D is a schematic diagram corresponding to step S250 of FIG. 8. FIG. 10 is a flowchart of step S250 of the method for manufacturing a fine metal mask according to an embodiment of the present invention; FIG. 11A is a schematic diagram corresponding to step S251a of FIG. 10; This corresponds to the schematic diagram of step S252a in FIG.

Claims (5)

A fine metal mask comprising: a central pattern portion having a mask pattern; and a reinforcing outer frame coupled to an outer edge of the central pattern portion; wherein the reinforcing outer frame has a thickness greater than the central pattern portion a thickness, and the fine metal mask is made by an electroforming process; the central pattern portion includes a first central portion of a first electroformed layer, the mask pattern is formed on the first central portion, and the reinforcement is The outer frame includes a first peripheral portion, a second electroformed layer and a third electroformed layer of the first electroformed layer, the first peripheral portion is adjacent to the first central portion, and the second electroforming Laminated on the first peripheral portion, a uniform hole is formed between the second electroformed layer and the first central portion, the through hole communicates with the mask pattern, and the second electroformed layer includes a second central portion And a second peripheral portion, the second peripheral portion is adjacent to the second central portion, the third electroformed layer is disposed on the second peripheral portion, between the third electroformed layer and the second central portion A through hole is formed, and the through hole communicates with the through hole. The fine metal mask of claim 1, wherein the material of the fine metal mask is selected from the group consisting of iron, cobalt, nickel, and an alloy of at least two of the foregoing. A method of fabricating a fine metal mask, comprising: sputtering to form a metal layer on a glass substrate; forming a first patterned photoresist layer on the metal layer, wherein the first patterned photoresist layer exposes the a first predetermined electroforming surface of the metal layer; electroforming to form a first electroformed layer on the first predetermined electroforming surface, wherein the first electroforming layer has a first central portion and a first adjacent to the first a first peripheral portion of the central portion, the first central portion being coupled to the first patterned photoresist layer, the first peripheral portion having a second predetermined electroformed surface; Forming a second patterned photoresist layer on the first central portion and the first patterned photoresist layer, wherein the second patterned photoresist layer exposes the second predetermined electroformed surface; electroforming forms a a second electroformed layer on the second predetermined electroformed surface, wherein the second electroformed layer has a second central portion and a second peripheral portion adjacent to the second central portion, the second central portion and the second electroformed layer a second patterned photoresist layer having a third predetermined electroformed surface; a third patterned photoresist layer exposing the third predetermined electroformed surface to the second central portion and the a second patterned photoresist layer; electroforming a third electroformed layer on the third predetermined electroformed surface; and removing the first patterned photoresist layer, the second patterned photoresist layer, a third patterned photoresist layer, the metal layer and the glass substrate to obtain the fine metal mask; wherein the reinforcing outer frame is connected to an outer edge of the central pattern portion, the central pattern portion having a mask pattern The thickness of the reinforcing outer frame is greater than the thickness of the central pattern portion, and the fine metal mask The central patterned portion and the reinforced outer frame are formed, the first patterned photoresist layer is removed to form the mask pattern on the first central portion, and the second patterned photoresist layer is removed to form a consistent hole Between the second electroformed layer and the first central portion, the through hole communicates with the mask pattern, and the third patterned photoresist layer is removed to form a through hole in the third electroformed layer and the second Between the central portions, the through hole is in communication with the through hole, the central pattern portion includes the first central portion of the first electroformed layer, and the reinforcing outer frame includes the first periphery of the first electroformed layer a second electroformed layer and the third electroformed layer. The method of fabricating a fine metal mask according to claim 3, wherein the removing the first patterned photoresist layer, the second patterned photoresist layer, the third patterned photoresist layer, and the metal layer And the step of obtaining the fine metal mask by the glass substrate, further comprising: Removing the first patterned photoresist layer, the second patterned photoresist layer, and the third patterned photoresist layer and covering a first protective film on the third electroformed layer, the second electroformed layer, and The first electroformed layer is adjacent to one side of the second electroformed layer; and the metal layer and the glass substrate are removed and covered with a second protective film away from the second electroformed layer and One side of the third electroformed layer is obtained to obtain the fine metal mask between the first protective film and the second protective film. The method of fabricating a fine metal mask according to claim 3, wherein the material of the fine metal mask is selected from the group consisting of iron, cobalt, nickel, and an alloy of at least two of the foregoing.