TWI668732B - Projection exposure device, projection exposure method, photomask for projection exposure device, and method of manufacturing substrate - Google Patents

Abstract

On the projection exposure apparatus, the mask pattern is transferred to the substrate mirror area with good precision.

A mask pattern corresponding to the deformation of the plurality of mirror regions is formed on the reticle, and a sequential repeat exposure method is employed to transfer the mask pattern to the substrate on which the plurality of mirror regions have been formed. The global alignment is adopted, the position of the alignment mark for sampling is measured, and the shape error of the mirror area is detected from the shape error of the global alignment area. Then, a mask pattern having an exposure field shape corresponding to the shape error, that is, the same tendency as the deformation direction, is selected.

Description

Projection exposure device, projection exposure method, photomask for projection exposure device, and method of manufacturing substrate

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a projection exposure apparatus for transferring a pattern formed on a photomask onto a substrate, and more particularly to alignment (alignment) with respect to a deformed substrate.

Most of the elements such as a semiconductor element, a liquid crystal display element, and a package substrate manufactured using a projection exposure apparatus constitute a multilayer structure in which a substrate is manufactured by overlapping patterns and transferring. When transferring a pattern of two or less layers onto a substrate, it is necessary to accurately overlap the positions of the pattern regions previously formed on the substrate and the patterns on the mask, that is, to accurately align the positions of the mask and the substrate.

In the way of position alignment, there is a generally known method called global alignment (GA). Therefore, a plurality of mirror regions are specified along the ruled lines on the substrate, and alignment marks are formed on the grid lines in order to define the respective mirror regions. Then, a global alignment area containing a plurality of mirror regions is determined, and a position coordinate of the alignment alignment symbol for the region is detected.

When a pattern of 2 or less layers is transferred, alignment accuracy errors of the stage, substrate stretching, and the like may cause alignment errors between the mirrors. Therefore, from the difference between the position coordinates of the aligned alignment mark used and the position coordinates of the original design alignment mark, the alignment error between the mirrors is calculated, and the degree of deviation is repaired. In the meantime, the correction of the scaling is performed, and the alignment is performed. (For the example, refer to Patent Document 1). On the other hand, when the zoom correction corresponding to the expansion and contraction of the substrate is performed, the projection of the mask pattern can be enlarged/reduced by adjusting the position of the variable magnification lens of the projection optical system (see Patent Document 2).

The deformation of the substrate is not only a linear expansion and contraction along the vertical axis of the coordinate axis, but also expansion and contraction in other directions such as a diagonal direction, and various shapes may be formed, such as a rhombus or a trapezoid. Such deformation is difficult to recover by scaling correction. Therefore, there is a conventional method in which a flat plate deformed to be the same as the working substrate is provided on the optical path of the mask substrate and the working substrate, and a mask pattern corresponding to the deformation is transferred (see Patent Document 3).

[First technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-269562

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-29546

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2011-248260

The deformation of the substrate is not the same, and various distortion states are generated on the substrate. In particular, when a substrate made of ceramic or resin is used, the substrate is deformed with complicated distortion. The distortion of the substrate or the device characteristics may cause the shape of the mirror region to be different from the shape determined by the actual original design. In this case, the scaling correction based on the expansion and contraction in the coordinate axis direction cannot be performed to solve the problem.

The projection exposure apparatus is an exposure apparatus for forming a pattern of high precision and high resolution, and for most applications, such as a semiconductor wafer, a germanium wafer is used. When a silicon wafer is used, its material will make the deformation of the mirror area inconspicuous.

However, a substrate (for example, a relay substrate) formed by using ceramics, resin, or the like, in order to form a high-resolution pattern, it is necessary to use a projection exposure apparatus. In this case, even if the alignment is corrected by the GA method to correct the alignment error of the mirror region, it is impossible to cope with the complicated deformation of the mirror region itself. As a result, it is feared that the positional deviation of the through holes occurs between the respective layers, resulting in deterioration of the coincidence accuracy of the pattern.

Therefore, even for deformation of various mirror regions, it is required to perform alignment with good precision.

The projection exposure apparatus of the present invention is a projection exposure apparatus for transferring a mask pattern (in a state of reduction, equal magnification, etc.) onto a substrate by a sequential repeated exposure step, comprising a scanning portion, wherein a plurality of two-dimensional arrays are arranged in two dimensions The region and the plurality of alignment marks disposed along the arrangement of the plurality of mirror regions are formed on the substrate, and the scanning portion intermittently moves the substrate relative to the projection region of the mask pattern formed on the mask, and the projection exposure The apparatus further includes an exposure control section in which the mask pattern is transferred to the plurality of mirror regions by a sequential repeat exposure method.

Further, the projection exposure apparatus includes a shape error measuring unit that measures a two-dimensional shape error of a predetermined mirror region when the original designed mirror region is used as a reference from the positions of the plurality of alignment marks. Actual measurement due to deformation of the substrate, etc. The shape and the position of the measured mirror area deviate from the shape (such as a rectangle) and the position of the original design of the mirror area as a reference, and this condition is measured and detected as a "shape error".

Here, the "two-dimensional shape error" means a deformation of a mirror region caused by deformation or variation in a direction different from a predetermined coordinate axis on a substrate, and includes, for example, along a coordinate axis ( Uniaxial or biaxial) Shape errors other than magnification or reduction. When the original design of the mirror area is a rectangle, the non-rectangular deformation of the diamond, the parallelogram, the trapezoid, the barrel shape, the coil shape, the fan shape, etc. is different from the original design, or the position of the entire area of the rotation deviation is the original The location of the design is different and it is also a two-dimensional shape error. The two-dimensional shape error of such a mirror region may be caused by distortion generated in a direction different from the coordinate axis of the substrate, characteristics of the device, and the like.

In the reticle of the present invention, a plurality of mask patterns are provided for the original designed mirror region, which respectively correspond to a plurality of mirror regions having different two-dimensional shape errors. Here, the "shape error is different" also includes the case where the deformation patterns of the mirror regions such as the parallelogram and the trapezoid are different, and the vertical deviation degree, that is, the magnitude of the deviation angle with respect to the coordinate axis, is different. In the case of a difference, the case where the variation in the positional change of the mirror region is different is also included.

Further, the exposure control unit selects a mask pattern corresponding to the measured shape error from among the plurality of mask patterns, and transfers the mask pattern. For example, a mask pattern having an exposure field equal to a shape of a deformed mirror region, a mask pattern having an amount of deformation such as an exposure field and a vertical deviation, and a mask having an exposure field and a variation position of the mirror region are equal. The pattern will be selected. For the shape error, the type of deformation, the amount of deformation, and the amount of variation of the area can be selected. A mask pattern with the same tendency.

For example, when a plurality of alignment marks include a sampling alignment mark for specifying a global alignment area formed by a predetermined number of mirror regions, the exposure control portion may measure a shape error of the global alignment region according to the position of the alignment alignment mark for sampling, Select the mask pattern that corresponds to the shape error. Further, when the sampling alignment marks are provided in correspondence with the plurality of global alignment areas defined on the substrate, the exposure control unit can measure the shape error for each of the global alignment areas. Furthermore, the exposure control unit can calculate the arrangement error of the mirror area in the global alignment area according to the position of the alignment mark for sampling, and can be measured according to the position of the alignment mark used to standardize the mirror area in the global alignment area. The shape error of the mirror area.

A projection exposure method according to another embodiment of the present invention is directed to a substrate having a plurality of mirror regions formed in two dimensions and a plurality of alignment marks disposed along an arrangement of a plurality of mirror regions, from a plurality of alignment marks Position, measuring the shape error of the deformed mirror area based on the original design of the mirror area; making it intermittently relative to the projection area of the mask pattern formed in the mask, taking a repeated exposure method The mask pattern is transferred to the plurality of mirror regions; and the mask has a plurality of mask patterns corresponding to the plurality of deformed mirror regions different from the shape error; and the plurality of mask patterns are selected from the plurality of mask patterns A mask pattern corresponding to the shape error that has been measured, and the mask pattern is transferred.

A reticle for a projection exposure apparatus according to another embodiment of the present invention is a reticle for a projection exposure apparatus that transfers a mask pattern (in a state of reduction, equal magnification, etc.) onto a substrate by a sequential repeat exposure step, and can use light A cover is used to manufacture the substrate.

For example, in the projection exposure apparatus, the scanning unit includes a scanning unit in which a plurality of two-dimensionally arranged mirror regions and a plurality of alignment marks arranged along the arrangement of the plurality of mirror regions are formed on the substrate, and the scanning portion makes the substrate The projection exposure apparatus further includes an exposure control unit for intermittently moving relative to a projection area of the mask pattern formed on the mask, wherein the mask pattern is transferred to the plurality of mirror areas by a sequential repeat exposure method.

In the reticle of the present invention, a plurality of mask patterns are included, and the plurality of mask patterns correspond to a plurality of mirror regions, each having a different two-dimensional shape error based on the original designed mirror region.

By using such a reticle for an exposure device for projection, a mask pattern can be selected from a plurality of mask patterns having an exposure field corresponding to the shape error of the measured mirror region in a two-dimensional state (region) Thereby, the mask pattern and the mirror area can be overlapped without any deviation. For example, a mask pattern having an exposure field equal to a shape of a deformed mirror region, a mask pattern having an amount of deformation such as an exposure field and a vertical deviation, and a mask having an exposure field and a variation position of the mirror region are equal. The pattern is selected, and for the shape error, a mask pattern having the same tendency in terms of the type of deformation of the region, the amount of deformation, and the amount of variation in the region can be selected.

For example, the plurality of mask patterns have any one of a parallelogram shape, a diamond shape, a trapezoidal shape, a barrel shape, and a winding shape. If the shape of the mirror area is not substantially deformed, the shape is the same as that of the original design, and a mask pattern having a shape equal to the shape of the original design mirror area may be provided on the reticle.

According to the present invention, in a projection exposure apparatus, a mask pattern can be used It is superposed on the mirror area of the substrate with high precision and is transferred thereon with high precision.

10‧‧‧Projection exposure device

20‧‧‧Light source

21‧‧‧Lighting Department

22‧‧‧Mirror

24‧‧‧ lens array

26‧‧‧Mirror

28‧‧‧ collimation mirror

30‧‧‧Photomask platform

32‧‧‧ Platform Drivers

34‧‧‧Projection optical system

36‧‧‧Alignment Marking Department (Shape Error Measurement Department)

38‧‧‧Image Processing Unit (Shape Error Measurement Unit)

40‧‧‧Base platform

42‧‧‧ Platform drive unit (scanning department)

50‧‧‧Control Department (Operation Department, Exposure Control Unit)

W‧‧‧Substrate

P2~P8‧‧‧ deformed mask pattern

SA‧‧ ‧ mirror area

SM‧‧‧Sampling alignment marks

AM‧‧ Alignment marks

ARM‧‧‧Global Alignment Area

R‧‧‧Photo Mask

Fig. 1 is a schematic block diagram of a projection exposure apparatus of a first embodiment.

Fig. 2 shows a substrate in which a mirror area is arranged.

Figure 3 shows a plurality of reticles that have formed a mask pattern.

Fig. 4 shows the shape error of the mirror region caused by the deformation of the substrate.

Fig. 5 shows the flow of the exposure operation performed by the successive repeated exposure method.

Fig. 6 shows an example of a deformed shape of the global alignment area.

Fig. 7 is a view showing the shape error of the global alignment area and the shape error of the mirror area in the second embodiment.

Embodiments of the present invention will be described below with reference to the drawings.

Fig. 1 is a schematic block diagram of a projection exposure apparatus of a first embodiment. Hereinafter, the exposure process will be described on the premise that the exposure process is to form a first layer pattern on the substrate, and after the second layer, the mask pattern is superposed on the mirror region of the substrate.

The projection exposure apparatus 10 is an exposure apparatus that transfers a mask pattern formed on the mask R to a substrate (working substrate) W by repeated exposure, and includes a light source 20 such as a discharge lamp and a projection optical system 34. The mask R is made of a material such as quartz, and forms a mask pattern having a light-shielding region. The substrate W is here a substrate made of tantalum, ceramic, glass or resin (for example, a relay substrate).

The illumination light emitted from the light source 20 is incident through the mirror 22 In the lens array 24, the amount of illumination light becomes uniform. The illumination light after being uniformized is incident on the collimator mirror 28 through the mirror 26. Thereby, the parallel light is incident on the mask R. The light source 20 is driven and controlled by the light driving portion 21.

A mask pattern is formed on the mask R, and the mask R is mounted on the mask platform 30 in order to position the mask pattern at the light source side focus position of the projection optical system 34. An aperture (not shown) is provided on the front side (light source side) of the mask R, and illumination light is incident only on a part of the mask pattern.

On the mask platform 30 on which the mask R is mounted and the substrate stage 40 on which the substrate W is mounted, three coordinate axes of X-Y-Z perpendicular to each other are set. In order to move the mask R along the focal plane, the mask platform 30 is movable in the X-Y direction and driven by the platform driving unit 32. Further, the reticle stage 30 can also be rotated on the X-Y coordinate plane. The coordinate position of the reticle stage 30 is here determined by a laser interferometer or a linear encoder (not shown).

The light of the exposure field (region) passing through the mask pattern of the mask R is projected onto the substrate W as the pattern light by the projection optical system 34. The substrate W is mounted on the substrate stage 40 in order to match the exposure surface with the image side focus position of the projection optical system 34.

In order to move the substrate W along the focal plane, the substrate stage 40 is movable in the X-Y direction and driven by the stage driving unit 42. Further, the substrate stage 40 can be moved in the Z-axis direction (the optical axis direction of the projection optical system 34) perpendicular to the focal plane (X-Y direction), and can also be rotated on the X-Y coordinate plane. The coordinate position of the substrate stage 40 is measured by a laser interferometer or a linear encoder (not shown).

The controller 50 controls the platform driving units 32, 42 to determine the mask R, The position of the substrate W, and the light driving portion 21 is controlled. Then, the exposure operation is performed in a repeated exposure manner. The memory (not shown) provided in the control unit 50 stores the mask pattern position coordinates of the mask R, the position coordinates of the original design of the mirror area formed on the substrate W, the amount of successive movement, and the like.

The alignment mark photographing portion 36 disposed beside the projection optical system 34 is a camera (or microscope) that photographs the alignment marks formed on the substrate W, and photographs the alignment marks before the mirror exposure. The video processing unit 38 detects the position coordinates of the alignment symbol based on the video signal sent from the alignment mark imaging unit 36. In addition, alignment marks can also be detected in TTL mode.

The control unit 50 sequentially transfers the mask pattern of the mask R in each of the mirror regions formed on the substrate W in accordance with the use of the successive repeat exposure method. In other words, the control unit 50 intermittently moves the substrate stage 40 in accordance with the interval between the mirror regions, and determines the position of the mirror region to be exposed at the projection position of the mask pattern. At this time, the light source 20 is driven to light the pattern. Projected on the grid area.

Before the transfer of the mask pattern, the control unit 50 detects the arrangement error of the mirror area by the global alignment, and superimposes the position of the mirror area of the substrate W and the projection area of the mask pattern. Further, in the present embodiment, the shape error of the mirror region caused by the deformation of the substrate or the like is detected, and the mask pattern corresponding to the shape error is projected, whereby the position of the mirror region and the pattern projection region is performed. coincide. At this time, the shape error of the global alignment area is detected, and the error is regarded as the shape error of the mirror area.

Fig. 2 shows a substrate in which a mirror area is arranged. Figure 3 shows a plurality of reticles that have formed a mask pattern. Fig. 4 shows the shape error of the mirror region caused by the deformation of the substrate. Here, the second to fourth figures are used to illustrate the mirror area. Shape error.

As shown in Fig. 2, on the substrate W, a mirror area SA which is arranged in a matrix at regular intervals is formed in accordance with the X-Y coordinate system. Then, along the arrangement of the mirror area SA, the alignment marks AM for positional overlap are formed at the four corners of each of the mirror areas.

Using the global alignment method, a global alignment area including a predetermined number (1 or more) of the mirror area is set, and the arrangement error and the correction value of the mirror area are calculated by statistical calculation. Here, the sampling (measurement) alignment mark SM is set in each of the adjacent four mirror areas SA, and the global alignment area ARM is set. On the substrate W, a global alignment area (not shown) is additionally set. As an example, a mirror area is formed in the same arrangement in a total of four global alignment areas.

By using the difference between the position coordinates of the alignment mark SM of the original design and the position coordinates of the alignment mark SM actually measured, the deviation of the orientation advancement of the mirror area in the global alignment area ARM, the rotation error, Size scaling error caused by linear stretching of the substrate W. The control unit 50 calculates a deviation value, a size scaling value, and a correction amount of the rotation amount for each of the mirror regions based on the detected statistical error, and moves the substrate platform 40 along the XY coordinate axis or rotates along the XY coordinate plane. .

In the arrangement error of the mirror area, the size scaling error is an error caused by the deformation of the substrate, and can be corrected according to the size scaling correction value. However, the distortion of the mirror region itself in a direction different from the X direction or the Y direction cannot be obtained. The premise of the arrangement error of the mirror area is to maintain the rectangular shape of the mirror area SA, wherein the mirror area SA has an X-axis along the X-axis The perpendicularity of the edge to the edge along the Y axis (90 degrees).

However, on the resin substrate W, complicated deformation occurs due to heat shrinkage or the like, and the rectangular shape of the mirror region is deformed into a shape that does not maintain the perpendicularity (herein, referred to as a non-rectangular shape). In the case where the degree of deviation of the perpendicularity is generated, the rectangular shape is changed to a parallelogram (diamond), a trapezoid, or the like. Also, the degree of vertical deviation will also result in a non-rectangular shape change.

In Fig. 4, the deformation of the mirror area is shown. The mirror area VP1 maintains a rectangular shape without deformation of the substrate, and is a shape of a mirror area as a reference. When linear stretching occurs on the substrate W, the reference mirror region VP1 maintains a rectangular shape, and only the size changes. The mirror regions VP2, VP3 represent the shape of the linear deformation.

On the other hand, if the opposite sides of the X direction/Y direction toward the +/- direction produce the same degree of perpendicularity, the mirror area changes to a parallelogram. The mirror area VP4 is a parallelogram (diamond) that produces a vertical deviation toward the -X direction, and the mirror area VP6 is vertically offset toward the -Y direction. Further, the mirror regions VP5, VP7 represent non-rectangular shapes larger than the vertical deviation. In addition, the vertical deviation also occurs in the +X direction and the +Y direction.

Further, as shown in the mirror area VP', the reference pixel area VP1 may also have a vertical deviation due to the close sides, resulting in a state in which the trapezoidal shape of the mirror area VP' is changed. Thus, the case where the distortion of the substrate W causes the mirror region to change from a rectangular shape to a non-rectangular shape is also various.

In the present embodiment, the same pattern forming layer (here, the second layer) of the substrate is blended into various non-rectangular shaped mirror regions, and a plurality of mask patterns (deformed mask patterns) are formed in the mask. R. As shown in Figure 3, here Eight mask patterns are formed in the mask R, and the exposure field shape (pattern region shape) of each mask pattern corresponds to the deformed shape of the mirror region.

Here, the mask pattern P1 has an exposure field shape corresponding to the reference mirror region VP1. Further, the mask patterns P2 to P7 have exposure field shapes corresponding to the mirror regions VP2 to VP7. In this case, the mask pattern forms a pattern in accordance with the shape of the exposure field. For example, in the mirror area VP4, the linear wiring is inclined along the vertical deviation (θ).

Then, the shape of the deformed mirror region is measured, and a mask pattern corresponding to the non-rectangular shape of the deformation (that is, the degree of deformation and the deformation characteristics have the same tendency) is selected, whereby the projected image of the mask pattern can be highly accurate. The ground coincides with the deformed mirror area. Further, the mirror area may be set to a shape other than a rectangle (for example, a rectangle having a partial notch, etc.), and for such a mirror area, a mask pattern may be provided according to a shape error.

Only the mirror area VP2, VP3 of the size scaling error can be subjected to size scaling correction by adjustment of the projection optical system, etc., and only the mask pattern corresponding to the shape error which cannot be scaled correspondingly is formed on the mask R. Moreover, the mask pattern can also be selected for the distortion of the pattern image caused by the adjustment of the projection optical system.

Fig. 5 shows the flow of the exposure operation performed by the successive repeated exposure method. Fig. 6 shows an example of the deformed shape of the global alignment area.

As described above, four global alignment areas ARO, ARP, ARN, and ARM are set on the substrate W, and then the arrangement error and the shape error of the mirror area are respectively measured for the respective global alignment areas (S101). The shape error of the mirror area can be determined by directly taking advantage of the shape error of the global alignment area. The position coordinates of the alignment mark SM are used to calculate the shape error of the mirror area from the vertical deviation of the global alignment area and the size scaling error.

In Fig. 6, the vertical deviation of the global alignment area ARM caused by the deformation of the substrate is shown. When such a deformation of the rhombus or the parallelogram is measured by the statistical operation for the global alignment area ARM, it is also possible to see the same rectangular shape for the mirror area SA therein.

Then, a correction value such as a size scaling value, a deviation amount, and a rotation amount is calculated based on the arrangement error of the mirror area, and a mask pattern having an exposure field shape corresponding to the shape of the mirror area is selected (S102). Then, by the movement of the reticle stage 30, the selected mask pattern has illumination light passing through, the reticle R is positioned, and the mirror area as the exposure target is consistent with the pattern projection area, and the repeated exposure mode is adopted. Exposure (S103). When the exposure of one global alignment area is completed, the other global alignment area also starts the same exposure operation (S104). This exposure operation performs a plurality of layers on the substrate, thereby fabricating the substrate.

Thus, according to the present embodiment, a plurality of mask patterns are formed for the mask R, which correspond to the deformation of the mirror region formed on the predetermined pattern forming layer of the substrate, and the method of successive repeated exposure is used. A mask pattern is transferred onto the substrate of the plurality of mirror regions. The position coordinates of the alignment marks for sampling are measured in a global alignment manner, and the shape error of the mirror area is detected from the shape error of the global alignment area. Then, a mask pattern is selected which has an exposure field shape corresponding to the shape error, that is, the same tendency to deform.

Next, a projection exposure apparatus according to a second embodiment will be described using FIG. In the second embodiment, the shape error of the mirror area is aligned with the global The area is measured separately.

Fig. 7 shows the shape error of the global alignment area of the second embodiment and the shape error of the mirror area.

In the second embodiment, the alignment error of the mirror area is measured by the sampling alignment symbol SM of the global alignment area ARM. On the other hand, the alignment mark AM set at the four corners of each of the mirror areas SA is aligned with the mark photographing unit. 36 is taken, and a statistical value such as the average value of the position coordinates of each of the mirror regions is calculated, thereby calculating the shape error of the mirror region SA.

Here, the mirror area SA is deformed into a trapezoidal shape, and a rotational deviation degree (rotation of the entire mirror area with respect to the X-axis or the Y-axis) is generated, and the amount of rotational deviation varies depending on the position of the mirror area. Thereby, the shape error can be correctly measured for each mirror area. Further, when the global alignment mode of the first embodiment is employed, the degree of rotational deviation of the global alignment region can also be measured, and this is measured as the degree of rotational deviation of the mirror region.

Further, each shape error can be calculated without obtaining an average value of the shape errors. Alternatively, the shape error of the mirror area at a specific position in the global alignment area can be calculated, and it is inferred that the other mirror areas have the same shape error.

In the first and second embodiments, the substrate is twisted in a direction different from the XY coordinate axis, and a mask pattern in which the vertical deviation is considered according to the distortion is provided, but other regions with the mirror region may be provided. The mask pattern corresponding to the deformation. For example, a mask pattern such as a coil shape, a barrel shape, a sector shape, or a semicircular shape may be formed.

Furthermore, it can also be caused by reasons other than substrate distortion. A shape error (deformation) of the mirror area provides a mask pattern. For example, a mask pattern for correcting the deformation of the projection optical system may be formed, or a mask pattern corresponding to the shape deformation of the mirror region due to the unevenness of the substrate may be provided.

In addition, the alignment mark can be used as an indicator such as a hole. The mask is not limited to one, and a plurality of masks may be provided to form one or a plurality of mask patterns on each of the masks. In this case, the positioning of a plurality of reticle is controlled.

Claims (13)

A projection exposure apparatus comprising: a scanning unit, wherein a pair of substrate pairs formed with a plurality of two-dimensionally arranged mirror regions and a plurality of alignment marks arranged along an arrangement of the plurality of mirror regions are formed in the mask a projection area of the mask pattern is intermittently moved relative to each other; the exposure control unit transfers the mask pattern to the plurality of mirror regions by a sequential repeat exposure method: and a shape error measuring portion from the plurality of alignment marks The position measurement measures the two-dimensional shape error of the mirror region set by the original design of the mirror region; the mask has a plurality of mirror regions corresponding to the shape error for the original design of the mirror region. a mask pattern; the exposure control unit selects a mask pattern corresponding to the shape error that has been measured from the plurality of mask patterns, and transfers the mask pattern. The projection exposure apparatus of claim 1, wherein the plurality of alignment marks comprise sampling alignment marks, which can specify a global alignment area formed by a predetermined number of mirror regions; and the exposure control unit aligns according to sampling. The position of the mark, the shape error of the global alignment area is measured, and the mask pattern corresponding to the shape error is selected. The projection exposure apparatus of claim 2, wherein a sampling alignment mark is provided corresponding to a plurality of global alignment areas specified by the substrate; and the exposure control unit measures a shape error of each global alignment area. The projection exposure apparatus of claim 2, wherein the exposure control unit calculates a global alignment area based on a position of the alignment mark for sampling The error in the arrangement of the mirror regions in the domain, on the other hand, the shape error of the mirror region is measured according to the position of the alignment mark used to specify the mirror region in the global alignment region. The projection exposure apparatus of claim 4, wherein the shape error of the mirror area includes at least a vertical deviation of the mirror area. The projection exposure apparatus of claim 5, wherein the shape error of the mirror region includes at least a rotational deviation of the mirror region. A projection exposure method for measuring a plurality of mirror regions in a two-dimensional array and a plurality of alignment marks disposed along an arrangement of the plurality of mirror regions, from the positions of the plurality of alignment marks, The shape of the deformed mirror area in the original design is the shape error of the deformed mirror area; the relative movement of the projected area of the mask pattern formed on the mask is intermittently performed, and the mask pattern is transferred by successive repeated exposure methods. Up to the plurality of mirror regions; wherein the mask has a plurality of mask patterns corresponding to a plurality of deformed mirror regions different from the shape error; and the plurality of mask patterns are selected and measured The mask pattern corresponding to the shape error is transferred, and the mask pattern is transferred. A reticle for a projection exposure apparatus, characterized in that: the reticle comprises a plurality of mask patterns corresponding to a plurality of mirror regions having two-dimensional shape errors different from each other when the original designed mirror region is used as a reference . The photomask of the projection exposure apparatus of claim 8, wherein the plurality of deformed mask patterns have a mask pattern, which is opposite to the original The designed mirror area corresponds to the vertical area or the rotational deviation of the mirror area. The reticle for a projection exposure apparatus according to claim 8, wherein the plurality of mask patterns have any one of a parallelogram shape, a rhombic shape, a trapezoidal shape, a barrel shape, and a rolled line shape. The reticle for a projection exposure apparatus according to any one of claims 8 to 10, wherein the reticle further has a mask pattern having an exposure field equal to a shape of a originally designed mirror region . A projection exposure apparatus comprising the photomask for a projection exposure apparatus according to claim 8 of the patent application. A method of manufacturing a substrate, which is characterized in that a substrate for a projection exposure apparatus according to claim 8 of the patent application is used for a projection exposure apparatus to manufacture a substrate.