TWI741654B - Exposure apparatus, manufacturing method of flat panel display, device manufacturing method, and exposure method - Google Patents

Abstract

The liquid crystal exposure device (10) of the present invention emits light (IL) from the illumination system (20) through the projection optical system (40) to the substrate (P), and the illumination system (20) and the substrate (P) The projection optical system (40) is driven in the scanning direction for scanning exposure to form a predetermined pattern on the substrate (P). The acquisition unit of position-related information, and a control system that controls the projection optical system (40) based on the information during scanning exposure so that the positional relationship between the illumination system (20) and the projection optical system (40) is changed within a predetermined range.

Description

Exposure device, manufacturing method of flat panel display, device manufacturing method, and exposure method

The present invention relates to an exposure device, a manufacturing method of a flat-panel display, a device manufacturing method, and an exposure method. In detail, it relates to a scanning exposure that scans an energy beam in a predetermined scanning direction on an object to form a predetermined pattern on an object The exposure device and method, and the manufacturing method of the flat panel display or device including the aforementioned exposure device or method.

For a long time, the lithography process for manufacturing electronic components (microcomponents) such as liquid crystal display components and semiconductor components (integrated circuits, etc.) has used an exposure device that uses energy beams to form the mask or reticle ( Hereinafter, the patterns collectively referred to as "masks") are transferred to glass plates or wafers (hereinafter collectively referred to as "substrates").

As this type of exposure apparatus, there is known a line beam scanning type that scans the exposure illumination light (energy beam) in a predetermined scanning direction in a state where the photomask and the substrate are substantially stationary, thereby forming a predetermined pattern on the substrate. Scanning exposure device (for example, refer to Patent Document 1).

The exposure device described in Patent Document 1 mentioned above, in order to correct the positional error between the exposure target area on the substrate and the mask, moves the projection optical system in the direction opposite to the scanning direction during exposure, while passing through the projection optical system to align the microscope Measure the marks on the substrate and the mask (alignment measurement), and correct the position error of the substrate and the mask based on the measurement results. At this time, the projection optical system and the alignment microscope may be moved during the alignment measurement, and the relative position may fluctuate, which may cause the alignment measurement longitude to deteriorate. Advanced technical literature

[Patent Document 1] Japanese Patent Application Publication No. 2000-12422

Means to solve the problem

The present invention is completed under the above circumstances. The first exposure device in the first aspect of the invention emits light from the illumination system to the object through the projection optical system, and drives the illumination system and the projection optical system in the scanning direction relative to the object. Scanning exposure to form a predetermined pattern on the object, and it is provided with: an acquisition unit for acquiring information on the position to drive the illumination system and the projection optical system in the scanning direction; and a control system for the scanning exposure In the process, the projection optical system is controlled according to the information so that the change in the positional relationship between the illumination system and the projection optical system is within a predetermined range.

The second exposure device of the second aspect of the present invention forms a pattern on the object by scanning an exposure operation of scanning the energy beam in the scanning direction against the object. The scanning direction movement can detect the pattern side mark of the pattern holder with the pattern; the first drive system drives the first mark detection system in the scanning direction; the second mark detection system is set to be able to Move in the scanning direction to detect the object-side mark provided on the object; the second drive system drives the second mark detection system in the scanning direction; and the control device detects the first and second marks The output of the system is to align the relative position of the pattern holder and the object; at least a part of the elements constituting the first driving system and the elements constituting the second driving system are common.

The method for manufacturing a flat-panel display according to the third aspect of the present invention includes an operation of exposing the object using the first or second exposure device of the present invention, and an operation of developing the object after exposure.

The device manufacturing method of the fourth aspect of the present invention includes an operation of exposing the object using the first or second exposure device of the present invention, and an operation of developing the object after exposure.

The first exposure method of the fifth aspect of the present invention is to emit light from the illumination system to the object through the projection optical system, and drive the illumination system and the projection optical system in the scanning direction relative to the object to perform scanning exposure, so as to expose a predetermined pattern Formed on the object, including: using an acquiring unit to acquire information related to the position used to drive the illumination system and the projection optical system in the scanning direction; in the scanning exposure, making the information The change of the positional relationship between the illumination system and the projection optical system controls the operation of the projection optical system in a predetermined range.

The second exposure method of the sixth aspect of the present invention is to form a pattern on the object by scanning the energy beam in the scanning direction relative to the object. 1 mark detection system, which detects the movement of the pattern side mark of the pattern holder with the pattern; uses the first drive system to drive the first mark detection system in the scanning direction; uses the setting to be able to move in the scanning direction The moving second mark detection system detects the movement of the object side mark provided on the object; the movement of using the second drive system to drive the second mark detection system in the scanning direction; and the detection based on the first and second marks The output of the system performs an action of aligning the relative positions of the pattern holder and the object; at least a part of the elements constituting the first driving system and the elements constituting the second driving system are common.

The manufacturing method of the flat-panel display according to the seventh aspect of the present invention includes the operation of exposing the object using the first or second exposure method of the present invention, and the operation of developing the object after the exposure.

The device manufacturing method of the eighth aspect of the present invention includes an operation of exposing the object using the first or second exposure method of the present invention, and an operation of developing the object after exposure.

Hereinafter, an embodiment will be described using FIGS. 1 to 4(d).

Fig. 1 shows a conceptual diagram of a liquid crystal exposure apparatus 10 according to an embodiment. The liquid crystal exposure device 10 uses, for example, a rectangular (square) glass substrate P (hereinafter, simply referred to as substrate P) used in liquid crystal display devices (flat-panel displays), etc., as a step and scan method for exposure objects The projection exposure device, the so-called scanner.

The liquid crystal exposure apparatus 10 has an illumination system 20 that irradiates illumination light IL as an energy beam for exposure, and a projection optical system 40. Hereinafter, the direction parallel to the optical axis of the illumination light IL irradiated on the substrate P from the illumination system 20 through the projection optical system 40 is referred to as the Z-axis direction, and is set to the X-axis orthogonal to each other in a plane orthogonal to the Z-axis And Y-axis for illustration. Furthermore, in the coordinate system of this embodiment, the Y-axis system is substantially parallel to the direction of gravity. Therefore, the XZ plane is substantially parallel to the horizontal plane. In addition, the rotation (tilt) direction around the Z-axis will be described as the θz direction.

Here, in the present embodiment, a plurality of exposure target areas (referred to as a division area or shot area as appropriate) are set on one substrate P, and a photomask is sequentially transferred to the plurality of shot areas. pattern. In addition, although this embodiment is described for the case where four divided areas are set on the substrate P (the so-called case of taking four sides), the number of divided areas is not limited to this, and can be changed as appropriate.

In addition, in the liquid crystal exposure device 10, although the so-called step-and-scan exposure operation is performed, during the scanning exposure operation, the mask M and the substrate P are substantially in a static state, and the illumination system 20 and the projection optical system 40 (illumination The light IL) moves with a long stroke in the X-axis direction (appropriately called the scanning direction) relative to the mask M and the substrate P (refer to the white arrow in FIG. 1). On the other hand, in the stepping operation to change the area of the exposure target, the mask M is moved step by step with a predetermined stroke in the X-axis direction, and the substrate P is moved with a predetermined stroke in the Y-axis direction (refer to the figure respectively) 1 black arrow).

FIG. 2 shows a block diagram for the overall control of the input/output relationship of the main control device 90 of the components of the liquid crystal exposure device 10. As shown in FIG. 2, the liquid crystal exposure apparatus 10 includes an illumination system 20, a mask stage device 30, a projection optical system 40, a substrate stage device 50, an alignment system 60, and the like.

The lighting system 20 includes a lighting system main body 22 including a light source (for example, a mercury lamp) and the like of the illuminating light IL (refer to FIG. 1 ). During the scanning exposure operation, the main control device 90 controls, for example, the drive system 24 including a linear motor, so that the illuminating system main body 22 is scanned and driven in the X-axis direction with a predetermined long stroke. The main control device 90 obtains the position information of the lighting system main body 22 in the X-axis direction through the measurement system 26 including, for example, a linear encoder, and performs position control of the lighting system main body 22 based on the position information. In this embodiment, as the illumination light IL, for example, g-line, h-line, i-line, etc. are used.

The mask stage device 30 includes a stage body 32 that holds the mask M. The stage main body 32 can be moved in appropriate steps in the X-axis direction and the Y-axis direction by a drive system 34 including a linear motor, for example. When the X-axis direction is a stepping action for changing the divided area of the exposure object, the main control device 90 controls the drive system 34 to step-drive the stage main body 32 in the X-axis direction. Furthermore, as will be described later, when the Y-axis direction is the stepping action of the area (position) for scanning exposure within the area (position) for changing the exposure target, the main control device 90 controls the drive system 34 to move the stage body 32 steps Advance drive in the Y-axis direction. The drive system 34 can drive the mask M in the 3-degree-of-freedom (X, Y, θz) direction in the XY plane in an appropriate micro-width during the alignment operation described later. The position information of the mask M is obtained by, for example, a measurement system 36 including a linear encoder.

The projection optical system 40 is provided with a projection system main body 42 including an optical system in which an upright image of a mask pattern is formed on a substrate P (see FIG. 1) in an equal magnification system. The projection system main body 42 is arranged in a space formed between the substrate P and the mask M (refer to FIG. 1). During the scanning exposure operation, the main control device 90 controls the drive system 44 including a linear motor to drive the projection system body 42 in the X-axis direction with a predetermined long stroke in synchronization with the illumination system body 22, for example. The main control device 90 obtains the position information of the projection system main body 42 in the X-axis direction through, for example, a measurement system 46 including a linear encoder, and performs position control of the projection system main body 42 based on the position information.

Returning to FIG. 1, in the liquid crystal exposure device 10, when the illumination area IAM on the mask M is illuminated with the illumination light IL from the illumination system 20, the illumination light IL passing through the mask M is used to illuminate the illumination area through the projection optical system 40 The projected image of the mask pattern in the area IAM (part of the erect image) is formed on the substrate P and the illumination area of the illumination light IL conjugated to the illumination area IAM (exposure area IA). And relative to the mask M and the substrate P, the illuminating light IL (illumination area IAM and exposure area IA) is relatively moved in the scanning direction to perform scanning exposure. That is, in the liquid crystal exposure device 10, the illumination system 20 and the projection optical system 40 are used to generate the pattern of the mask M on the substrate P, and the sensing layer (resist layer) on the substrate P is exposed by the illumination light IL. This pattern is formed on the substrate P.

Here, in this embodiment, the illumination area IAM generated on the mask M by the illumination system 20 includes a pair of rectangular areas separated in the Y-axis direction. The length in the Y-axis direction of a rectangular area is set to, for example, 1/4 of the length in the Y-axis direction of the pattern surface of the mask M (that is, the length in the Y-axis direction of each partitioned area set on the substrate P). In addition, the interval between a pair of rectangular regions is similarly set to, for example, 1/4 of the length of the pattern surface of the mask M in the Y-axis direction. Therefore, the exposure area IA generated on the substrate P also includes a pair of rectangular areas separated in the Y-axis direction. In this embodiment, in order to completely transfer the pattern of the mask M to the substrate P, although it is necessary to perform a second scanning exposure operation for a divided area, it has the advantage that the illumination system main body 22 and the projection system main body 42 can be miniaturized. Specific examples of scanning exposure operations will be described later.

The substrate stage device 50 has a stage body 52 holding the back surface (the surface opposite to the exposure surface) of the substrate P. Returning to FIG. 2, when changing the stepping action in the Y-axis direction of the divided area of the exposure target, the main control device 90 controls the drive system 54 including a linear motor, for example, to drive the stage body 52 in the Y-axis direction step by step. . The driving system 54 can slightly drive the substrate P in the direction of 3 degrees of freedom (X, Y, θz) in the XY plane during the substrate alignment operation described later. The position information of the substrate P (the stage body 52) is obtained by, for example, a measurement system 56 including a linear encoder.

Returning to FIG. 1, the alignment system 60 includes an alignment microscope 62. The alignment microscope 62 is arranged in the space formed between the substrate P and the mask M (the position between the substrate P and the mask M in the Z-axis direction), and detects the alignment mark Mk (hereinafter, It is only called the mark Mk), and the mark formed on the mask M (not shown). In this embodiment, one mark Mk is formed near the four corners of each divided area (for one divided area, for example, four). The mark of the mask M is formed through the projection optical system 40 to correspond to the mark Mk.的的位置。 The location. In addition, the number and positions of the marks Mk and the marks of the mask M are not limited to these, and can be changed as appropriate. In addition, in each drawing, for ease of understanding, the mark Mk is displayed larger than it is actually.

The alignment microscope 62 is arranged on the +X side of the projection system main body 42. The alignment microscope 62 has a pair of detection fields (detection regions) separated in the Y-axis direction, and can simultaneously detect, for example, two marks Mk separated in the Y-axis direction in a divided region.

In addition, the alignment microscope 62 can simultaneously detect the mark formed on the mask M and the mark Mk formed on the substrate P (in other words, without changing the position of the alignment microscope 62). The main control device 90 obtains the relative positional deviation between the mark formed on the mask M and the mark Mk formed on the substrate P every time the mask M performs the X stepping operation or the substrate P performs the Y stepping operation. Information, and perform the relative positioning of the substrate P and the mask M in the direction along the XY plane to correct the position offset (cancel or reduce). In addition, the alignment microscope 62 is composed of a mask detection unit that detects (observes) the mark of the mask M, and a substrate detection unit that detects (observes) the mark Mk of the substrate P, which is integrated with a common box, etc., through which The common box is driven by the drive system 66 (refer to FIG. 2). Alternatively, the photomask detection unit and the substrate detection unit may be composed of separate boxes, etc. In this case, it is preferable to be configured such that, for example, the photomask detection unit and the substrate detection unit can be made equivalent to each other by a substantially common drive system 66. Movement characteristics to move.

The main control device 90 (refer to FIG. 2) controls the drive system 66 (refer to FIG. 2) including, for example, a linear motor to drive the alignment microscope 62 with a predetermined long stroke in the X-axis direction. In addition, the main control device 90 obtains position information in the X-axis direction of the alignment microscope 62 through a measurement system 68 including, for example, a linear encoder, and performs position control of the alignment microscope 62 based on the position information. In addition, the projection system main body 42 and the alignment microscope 62 have almost the same positions in the Y-axis direction, and their movable ranges partially overlap with each other. In addition, the drive system 66 that drives the alignment microscope 62 and the drive system 44 that drives the projection system main body 42 are driven in the X-axis direction. The control characteristics performed by the device 90 are substantially the same.

The main control device 90 (refer to FIG. 2) uses the alignment microscope 62 to detect a plurality of marks Mk formed on the substrate P, and based on the detection result (the position information of the plurality of marks Mk), the well-known full-wafer enhanced type is aligned (EGA) method to calculate the arrangement information (including information related to the position (coordinate value), shape, etc.) of the division area where the mark Mk of the detection target is formed.

Specifically, in the scanning exposure operation, the main control device 90 (refer to FIG. 2) uses the alignment microscope 62 arranged on the +X side of the projection system main body 42 to perform at least formation before the scanning exposure operation. The position detection of, for example, four marks Mk in the divided area of the exposure object is used to calculate the arrangement information of the divided area. The main control device 90 performs precise positioning of the substrate P in the 3-degree-of-freedom direction in the XY plane (substrate alignment action), and appropriately controls the illumination system 20 and projection based on the calculated arrangement information of the divided regions of the exposure object The optical system 40 performs a scanning exposure operation (transfer of the mask pattern) of the target area.

Next, the measurement system 46 (refer to FIG. 2) used to obtain the position information of the projection system main body 42 of the projection optical system 40 and the measurement used to obtain the position information of the alignment microscope 62 of the alignment system 60 will be described. It is the specific composition of 68.

As shown in FIG. 3(a), the liquid crystal exposure apparatus 10 has a guide 80 for guiding the projection system main body 42 in the scanning direction. The guide 80 is composed of a member extending parallel to the scanning direction. The guide 80 also has the function of guiding the alignment microscope 62 to move in the scanning direction. In addition, in FIG. 3( a ), although the guide 80 is shown between the mask M and the substrate P, in reality, the guide 80 is arranged in the Y-axis direction at a position avoiding the optical path of the illumination light IL.

The guide 80 is fixed with a scale 82 including at least a reflection type diffraction grating whose periodic direction is the direction parallel to the scanning direction (X-axis direction). In addition, the projection system main body 42 has a reading head 84 arranged opposite to the scale 82. In the present embodiment, an encoder system of the measurement system 46 (refer to FIG. 2) for obtaining the position information of the projection system main body 42 is formed by the above-mentioned scale 82 and the reading head 84. In addition, the alignment microscope 62 has a reading head 86 arranged opposite to the scale 82. In this embodiment, an encoder system is formed of the measurement system 68 (refer to FIG. 2) for obtaining the position information of the alignment microscope 62 by the above-mentioned scale 82 and the reading head 86. Here, the reading heads 84 and 86 can respectively irradiate the encoder measuring light beam to the scale 82, receive the light beam transmitted through the scale 82 (reflected light beam on the scale 82), and output relative position information to the scale 82 according to the received light result.

As described above, in this embodiment, the scale 82 constitutes a measurement system 46 (refer to FIG. 2) for obtaining the position information of the projection system body 42 and also constitutes a measurement system for obtaining the position information of the alignment microscope 62 68 (refer to Figure 2). That is, the projection system main body 42 and the alignment microscope 62 perform position control based on the common coordinate system (length measurement axis) set by the diffraction grating formed on the scale 82. In addition, the driving system 44 (refer to FIG. 2) for driving the projection system main body 42 and the driving system 66 (refer to FIG. 2) for driving the alignment microscope 62 may have some common or completely independent elements. .

In addition, the encoder systems constituting the above-mentioned measurement systems 46 and 68 (refer to Fig. 2 respectively) may be linear (1DOF) encoder systems whose length measurement axis is only in the X-axis direction (scanning direction), or may have multiple length measurement systems. axis. For example, by arranging a plurality of reading heads 84 and 86 at predetermined intervals in the Y-axis direction, the amount of rotation of the projection system main body 42 and the alignment microscope 62 in the θz direction can be obtained. In addition, it is also possible to form an XY 2-dimensional diffraction grating on the scale 82, and a 3DOF encoder system with a length measuring axis in the 3 degrees of freedom of the X, Y, and θz directions. Furthermore, a plurality of well-known two-dimensional reading heads that can measure length in the direction orthogonal to the scale plane in addition to the periodic direction of the diffraction grating can also be used as the reading heads 84 and 86 to obtain the projection system main body 42 , Align the position information of the 6-degree-of-freedom direction of the microscope 62.

Returning to FIG. 1, the calibration sensor 70 is located on the -X side of the substrate stage device 50 and is separately and independently arranged from the substrate stage device 50. The position of the calibration sensor 70 is fixed to the guide 80 and the ruler 82 (refer to FIG. 3(a) respectively). The calibration sensor 70 has a plurality of reference indicators, an observation optical system, a camera, etc. (none of which is shown). The main control device 90, as shown in FIG. 3(a), performs well-known calibration operations (illuminance calibration, focus calibration, etc.) on the illumination system IL and/or the projection system body 42 through the mask M and/or the projection system body 42 .

Here, in this embodiment, since the projection system main body 42 and the alignment microscope 62 are guided by the common guide 80, the movement range (movement path) during a series of scanning exposure operations (including alignment measurement operations) is repeated (Common. The calibration sensor 70 is configured such that the calibration position is set on the movement path of the projection system main body 42 and the alignment microscope 62 (the extension of the movement path for scanning exposure). That is, in the liquid crystal exposure apparatus 10, the projection system main body 42 and the alignment microscope 62 are moved along the moving path during a series of scanning exposure operations, and the calibration operation using the calibration sensor 70 can be performed.

Here, the main control device 90, at the position shown in FIG. 3(a), passes through the mask M and the projection system main body 42 (lens), and connects the mark formed on the mask M with the reference of the calibration sensor 70 The position offset of the mark 72 is obtained from the output of the calibration sensor 70. After that, the main control device 90, as shown in FIG. 3(b), moves the projection system main body 42 and the alignment microscope 62 in the -X direction without moving the mask M, and arranges the alignment microscope 62 on the mask M and the alignment Between the sensors 70. The main control device 90 causes the alignment microscope 62 to measure the marks and reference marks 72 formed on the mask M, and performs relative projection system main body 42 based on the above-mentioned positional deviation measured through the projection system main body 42 and the output of the alignment microscope 62 Align the calibration of the microscope 62.

The calibration sensor 70, as shown in FIG. 3(c), has a sensor (for example, a camera) not shown that can detect the mark 74 formed on the projection system main body 42. The main control device 90 uses the sensor (not shown) to detect the position of the mark 74 during the above-mentioned calibration operation (refer to FIG. 3(a)). Furthermore, in the state shown in FIG. 3( b ), the main control device 90 performs position detection of the alignment microscope 62. The distance between the reference mark 72 and the center of the detection field of view of all the sensors of the calibration sensor 70 is known. The main control device 90 performs the positional relationship between the projection system main body 42 and the alignment microscope 62 (that is, according to Corresponding setting of the origin of each coordinate system of the ruler 82.

Hereinafter, an example of the operation of the liquid crystal exposure device 10 during the scanning exposure operation will be described with reference to FIGS. 4(a) to 4(d). The following exposure operations are performed under the management of the main control device 90 (not shown in FIGS. 4(a) to 4(d). Refer to FIG. 2).

In this embodiment, the divided area (hereinafter referred to as the first irradiation area S ₁ ) in the first exposure sequence is set on the -X side and -Y side of the substrate P. In addition, in FIGS. 3(a) to 4(c), the rectangular area assigned with the symbol A indicates the movement range (movement path) of the projection system main body 42 during the scanning exposure operation, and the rectangular area indicated by the symbol CP indicates calibration The position (calibration position) where the sensor 70 (refer to FIG. 1) performs a calibration operation. The moving range A of the projection system main body 42 is set, for example, mechanically and/or electrically. _{In addition, the symbols S 2} to S ₄ assigned to the divided areas on the substrate P represent the second to fourth irradiation areas in the respective exposure order.

Before starting a series of scanning exposure operations, the main control device 90 first performs calibration operations (illuminance calibration, focus calibration, etc.) with respect to the illumination system IL and/or the projection system body 42 using the calibration sensor 70 (see Figure 3 (a) )).

In addition, the main control device 90 uses the calibration sensor 70 to obtain the respective position information of the alignment microscope 62 and the projection system main body 42 together with the calibration operation described above (refer to FIG. 3(b) and FIG. 3(c), respectively), Correspondingly set the positional relationship between the two. The positions of the alignment microscope 62 and the projection system main body 42 during one of the following series of scanning exposure actions are controlled based on the positional relationship between the alignment microscope 62 and the projection system main body 42 obtained at this time.

Main control unit 90, FIG. 4 (a), the alignment microscope 62 is driven in the + X direction, detecting the formation of the first irradiation region irradiated with the fourth region S ₁ it S ₄ (first irradiation area S ₁ of the + X for example, eight markers within Mk side of the division region), obtains the detection result of the arrangement according to this first irradiation area S ₁ of the information. Thus, by obtaining the first region S ₁ information are arranged in accordance with the 8 markers Mk, and determined in accordance with only the arrangement provided in the irradiation of the first region S ₁ of the four markers Mk information compared, it can be determined more considered A wide range of statistically inclined arrangement information improves the alignment accuracy of the _{first irradiation area S 1.} Further, considering the required accuracy of the alignment, the appropriate use of only four markers Mk within the first region S ₁ is obtained first irradiation area S ₁ of the information arrangement is also possible.

After calculating the first irradiation area S ₁ of the arrangement information, the main control unit 90, FIG. 4 (b), the projection system in the body 42 of the illumination system illumination system 20 of the body 22 (FIG. 4 (b) not shown with reference to FIG. 1) driven in synchronism in the + X direction, for the first irradiation area S ₁ of the 1st scanning exposure.

The main control device 90 reflects the calculation result of the above-mentioned arrangement information and controls the minute position of the substrate P while controlling the illumination system 20 through the mask M (not shown in FIG. 4(b), refer to FIG. 1) and the projection system main body 42 The illumination light IL is projected on the substrate P, and a part of the mask pattern is formed in the exposure area IA generated on the substrate P with the illumination light IL. As described above, in this embodiment, since the illumination area IAM generated on the mask M (refer to FIG. 1) and the exposure area IA generated on the substrate P are separated in the Y-axis direction, a pair of rectangular areas is separated. The pattern image of the mask M transferred to the substrate P by the scanning exposure action is formed in a pair of strip-shaped regions (half area of the full area of a divided region) separated in the Y-axis direction and extending in the X-axis direction.

Next, the main control unit 90, to perform a first region S 2 of the scanning exposure operation _1, FIG. 4 (c), the mask M and the substrate P in the -Y direction, the stepping movement (see FIG. 4 (C) the black arrow). The step movement amount of the substrate P at this time is, for example, a length of 1/4 of the length of a divided area in the Y-axis direction. At this time, in the step movement of the substrate P and the mask M in the -Y direction, it is better to be able to maintain the relative positional relationship between the substrate P and the mask M (or, to correct the relative positional relationship The way) to make the step movement better.

Hereinafter, FIG. 4 (d), the main control unit 90 drives the projection system main body 42 in the -X direction to the first irradiation region S for the second time (double path) of the _scanning exposure operation. Accordingly, in order to transfer the first mask pattern scan exposure operation, and the mask pattern is transferred to the second scan exposure operation i.e. the first irradiation region S ₁ is engaged, the pattern of the mask M collectively Transfer to the first irradiation area S ₁ . Furthermore, as shown in FIG. 4(c), after stepping the substrate P and the mask M in the -Y direction, before the second scanning exposure starts, the alignment of the substrate P and the mask M may be performed again Measure and align each other's position based on the result. Thus, the first irradiation region can improve accuracy of alignment of all of the ₁ S, thereby improving the transfer accuracy of the pattern of the reticle ₁ S M of the first irradiation region.

Hereinafter, although not shown, the main control device 90 _{performs a scanning exposure operation on the second shot area S 2} (a divisional area on the +Y side of the first shot area S ₁ ), and moves the substrate P in the -Y direction by stepping The second irradiation area S _{2 is} opposed to the mask M. Of the second region S ₂ of the scanning exposure operation, due to the same for the first irradiation region S ₁ of the scanning exposure operation, so the description thereof is omitted. Hereinafter, the main control device 90 appropriately performs at least one of the X stepping action of the mask M and the Y stepping action of the substrate P while performing scanning exposure _{of the third and fourth shot regions S 3} and S ₄ action. In addition, the alignment sensor 70 may also be used to obtain the positional relationship between the alignment microscope 62 and the projection system main body 42 before the scanning exposure operation is performed on the second to fourth irradiation regions S ₂ to S _4. In addition, it is also possible to use the alignment measurement result (the result of the EGA calculation) of the above-mentioned first irradiation area S _{1 when the alignment to the fourth irradiation area S 4 is performed.} This case, the irradiation region of the fourth mask M and S ₄ of the configuration, only two points of each of the marking of the mark Mk mark of the mask M and the substrate P, the measurement of 3 degrees of freedom within the XY plane ( The position shift in the X, Y, θz) directions can substantially shorten the time required for the alignment of the fourth irradiation area S4.

Here, in the scanning exposure operation as described above, the main control device 90 makes the illumination system main body 22 and the projection system main body 42 move independently and synchronously in the scanning direction with a long stroke, so before the scanning exposure operation starts, the illumination The relative positions of the system main body 22 and the projection system main body 42 in the scanning direction are aligned (calibrated). In the calibration operation, the main control device 90, as shown in Figure 3(c), uses the mark 74 formed on the projection system body 42 to position the projection system body 42 at a predetermined position (the image formed through the projection system body 42 is in the calibration sensor After the imaging position on the device 70), while moving the illuminating system main body 22 in the scanning direction, the predetermined calibration mark (not shown) is irradiated with the illumination light IL, so that the image of the mark passes through the projection system main body 42 (projection lens). ) It is imaged on the calibration sensor 70 (refer to Fig. 3(a)). As the mark for calibration, for example, a slit-shaped mark, a mark with a periodic pattern, etc. can be used. In addition, the mark for calibration may be formed on the mask M, or may be formed on a member other than the mask M (for example, a member dedicated to calibration).

When a slit-shaped mark is used as the calibration mark, the output of the calibration sensor 70 can be obtained as a graph as shown in FIG. 5, for example. In the graph of FIG. 5, the vertical axis represents the light intensity of the illumination light IL, and the horizontal axis represents the position of the illumination system body 22 in the X-axis direction. The main control device 90 obtains the information corresponding to the X position near the peak light intensity from the graph shown in FIG. 5, and performs the positioning of the main body 22 of the lighting system. The information is the X position information of the lighting system main body 22, the X position information of the lighting system main body 22 relative to the projection system main body 42, the information related to the difference between the X position of the lighting system main body 22 and the projection system main body 42, and the lighting system main body The position of 22 is aligned with the position correction information of the X position of the projection system body 42 and so on. During the following scanning exposure operations, the position control of the projection system main body 42 and the illumination system main body 22 is performed to approximately maintain the relative positional relationship between the projection system main body 42 and the illumination system main body 22 at the end of the positioning. In addition, in this calibration operation, the relative positional relationship between the projection system main body 42 and the illumination system main body 22 may not be reproduced rigorously. As long as the light intensity at the peak can be maintained (to obtain the desired light intensity), the projection A slight position deviation of the relative positional relationship between the main body 42 and the lighting main body 22 is allowed.

In addition, similar to the relative positioning operation during the above-mentioned calibration, during the scanning exposure operation, the illumination system main body 22 and the projection system main body 42 do not need to move strictly synchronously (the same speed and the same direction), and a predetermined relative position error can be tolerated. That is, assuming that the relative positions of the illumination system main body 22 and the projection system main body 42 are deviated during the scanning exposure operation, the imaging characteristics of the projection system main body 42 (projection lens) used to form the image of the mask pattern on the substrate P There will be a change, but as long as the image of the mask pattern is not collapsed due to the change in the imaging characteristics, the change in the imaging characteristics will not affect the overlap accuracy of the patterns and is allowed. In FIG. 6, the calibration mark projected in the projection area IA (image field) formed by the projection system main body 42 is shown. As shown in FIG. 6, even if the imaging characteristics of the projection system body 42 change, and the image of the calibration mark formed in the image field before and after the change (refer to the arrow in FIG. 6) has a positional deviation, as long as it does not actually produce If the image collapses when the mask pattern is transferred to the substrate P, the variation range of the imaging characteristics can be regarded as the allowable range. Therefore, the illumination system main body 22 and the projection system main body 42 are slightly opposed to each other during the scanning exposure operation. Position error is allowed.

In addition, the main control device 90 performs the waveform aberration correction of the projection system main body 42 together with the calibration operation (relative position alignment operation) of the illumination system main body 22 and the projection system main body 42, that is, the correction of the imaging performance. The main control device 90 uses the Zernike polynomial to obtain the projection system in a state where the relative position alignment between the illumination system main body 22 and the projection system main body 42 is completed (that is, the state where the light intensity is at a peak in the graph of FIG. 5). The waveform aberration of the body 42. In addition, the method of measuring the waveform aberration is not particularly limited. For example, the waveform aberration measurement mark of the mask M can be used for measurement, and a Shack-Hartmann wavefront sensor can also be used. The main control device 90 corrects the aforementioned aberrations using a correction optical system (not shown) included in the projection system main body 42 (projection lens). In addition, in this embodiment, although waveform aberrations are measured and corrected, other aberrations (for example, Seidel aberrations) can also be measured and corrected.

In addition, the calibration method for adjusting (aligning) the relative positional relationship between the illumination system main body 22 and the projection system main body 42 is not limited to the above, and can be changed as appropriate. That is, as described above, since the illumination system main body 22 and the projection system main body 42 allow a slight positional deviation, the positioning accuracy of the two may be relatively rough in some cases. Therefore, as shown in FIG. 7, by abutting the lighting system main body 22 and the projection system main body 42 respectively (refer to the white arrow in FIG. 7) to the fixed member mechanical block (Mechenical block) 78 for positioning, it is also possible to mechanically Perform calibration (position alignment) of the main body 22 of the illumination system and the main body 42 of the projection system.

The timing of performing the above-mentioned calibration operation is not particularly limited. For example, it may be performed based on the number of processed substrates P with a predetermined timing, or may be performed based on the total moving distance of the illumination system main body 22 and the projection system main body 42. In addition, a temperature sensor may be provided in the exposure apparatus 10 to perform calibration when there is a possibility that the position measurement error of the illumination system main body 22 and the projection system main body 42 caused by temperature changes may occur.

According to the liquid crystal exposure apparatus 10 of one embodiment described above, since the detection system for detecting the mark on the mask M and the detection system for detecting the mark Mk on the substrate P are moved using a drive system that is substantially common in the scanning direction, Therefore, the alignment measurement accuracy of the scanning exposure device of the beam scanning type like the liquid crystal exposure device 10 of this embodiment can be improved.

In addition, since the projection system main body 42 and the alignment microscope 62 are also moved using a drive system that is substantially common in the scanning direction, the exposure accuracy based on the alignment measurement result of the alignment microscope 62 can be improved.

In addition, since the calibration position of the calibration sensor 70 is set on the movement path of the alignment microscope 62 and the projection system main body 42 (refer to FIGS. 4(a) to 4(d)), it is possible to prevent the calibration operation from being performed. The resulting time loss (ie reduction in production time).

In addition, the configuration of one of the embodiments described above can be appropriately changed. For example, the calibration sensor 70 (calibration position) can also be installed on the -X side of the substrate stage device 50.

In addition, in the above embodiment, the position information of the projection system main body 42 and the alignment microscope 62 is obtained by an encoder system that defines the coordinate system with a scale 82, but the configuration of the measurement system is not limited to this, and can also be used For example, other measurement systems such as optical interferometer systems.

In addition, in the above-mentioned embodiment, although a set of alignment microscopes 62 having a pair of detection fields is arranged on the +X side of the projection system main body 42, the number of alignment microscopes is not limited to this. For example, there may be two sets of alignment microscopes, or the alignment microscopes 62 may be respectively arranged on the X side and −X side (one side and the other side of the scanning direction) of the projection system main body 42. In this case, before the second scanning exposure operation (that is, the scanning exposure operation performed by moving the projection system main body 42 in the -X direction) of each divided area, the inspection is performed with the alignment microscope 62 on the -X side Meanwhile Mk marker, i.e., the loss can be suppressed at the time of lifting the first irradiation region S ₁ all of the alignment accuracy, thereby improving the transfer accuracy of the pattern of the first irradiation area S ₁ M of the photomask.

Further, the above-described embodiment, although the system after the first irradiation region S scan of _an exposure setting of the first region S ₁ of the + Y of the second irradiation region S scan ₂ of the exposed side of the (last) in, but not limited thereto, may be a fourth scanning irradiation area S ₄ of the exposure region under the first irradiation of S ₁ scan exposure. In this case, for example, by using a _{mask facing the first irradiation area S 1} and a mask facing the fourth irradiation area S ₄ (total 2 masks), the first and fourth irradiations can be continuously performed Scanning exposure of areas S ₁ and S _4. Further, also after the first irradiation region of the S ₁ scan exposure mask M is moved toward the + X direction to perform the stepping of the irradiation area S 4 of ₄ scanning exposure.

In addition, in the above-mentioned embodiment, although the mark Mk is formed in each division area (the first to fourth irradiation areas S ₁ to S ₄ ), it is not limited to this, and may be formed in the area between adjacent division areas (the so-called的刻线) within.

Furthermore, in the above embodiment, although one pair of illumination area IAM and exposure area IA are separated in the Y-axis direction, the mask M and the substrate P are generated on the mask M and the substrate P (refer to FIG. 1), but the illumination area IAM and the exposure area IA are The shape and length are not limited to this, and can be changed as appropriate. For example, the length in the Y-axis direction of the illumination area IAM and the exposure area IA may be equal to the length in the Y-axis direction of the pattern surface of the mask M and a partitioned area on the substrate P, respectively. In this case, the transfer of the mask pattern is completed by performing a scanning exposure operation for each divided area. Alternatively, the illumination area IAM and the exposure area IA may be an area whose length in the Y-axis direction is respectively half of the length of the pattern surface of the mask M and a partitioned area on the substrate P in the Y-axis direction. In this case, similar to the above-mentioned embodiment, it is necessary to perform a second scanning exposure operation for a divided area.

In addition, as in the above-mentioned embodiment, when the projection system main body 42 is reciprocated to perform junction exposure in order to form a mask pattern in a divided area, it is possible to use an alignment microscope for forward and backward paths with different detection fields of view. The scanning direction (X direction) is arranged in front of and behind the projection system main body 42. In this case, for example, the alignment microscope for the forward path (for the first exposure operation) can be used to detect the marks Mk at the four corners of the zone area, and the alignment microscope for the return path (for the second exposure operation) can be used to detect the marks Mk near the junction. . Here, the so-called junction part refers to the junction part between the area exposed by the scanning exposure of the past (the area where the pattern is transferred) and the area exposed by the scanning exposure of the double pass (the area where the pattern is transferred). As the mark Mk near the junction, the mark Mk may be formed on the substrate P in advance, or the exposed pattern may be used as the mark Mk.

In addition, in the above-mentioned embodiment, the driving system 24 for driving the lighting system main body 22 of the lighting system 20, the driving system 34 for driving the stage main body 32 of the mask stage device 30, and the driving system 34 for driving the projection optics The drive system 44 of the projection system body 42 of the system 40, the drive system 54 for driving the stage body 52 of the substrate stage device 50, and the drive system 66 for driving the alignment microscope 62 of the alignment system 60 (see respectively Fig. 2) The case where linear motors are included respectively is explained, but the types of actuators used to drive the above-mentioned illumination system main body 22, stage main body 32, projection system main body 42, stage main body 52, and alignment microscope 62 are different. Limited to this, it can be changed as appropriate. For example, various actuators such as a feed screw (ball screw) device and a belt drive device can be appropriately used.

In addition, in the above-mentioned embodiment, although the measurement system 26 for performing position measurement of the lighting system main body 22 of the lighting system 20, and the measurement system 36 for performing position measurement of the stage main body 32 of the mask stage device 30 , The measuring system 46 for measuring the position of the projection system body 42 of the projection optical system 40, the measuring system 56 for measuring the position of the stage body 52 of the substrate stage device 50, and the alignment system 60 The measurement system 68 (refer to FIG. 2 respectively) for the position measurement of the alignment microscope 62 has been described in the case where a linear encoder is included, but it is used to perform the above-mentioned illumination system main body 22, stage main body 32, projection system main body 42, and The types of measurement systems for the position measurement of the stage main body 52 and the alignment microscope 62 are not limited to these, and can be changed as appropriate. For example, various measurement systems such as an optical interferometer or a measurement system using a linear encoder and an optical interferometer can be appropriately used. .

In addition, in the above embodiment, the light source used in the illumination system 20 and the wavelength of the illumination light IL irradiated from the light source are not particularly limited, and may be, for example, ArF excimer laser light (wavelength 193nm), KrF excimer laser light ( Ultraviolet light (wavelength 248nm), or _{vacuum ultraviolet light such as F 2} laser light (wavelength 157nm).

In addition, in the above-mentioned embodiment, although the main body 22 of the illumination system including the light source is driven in the scanning direction, it is not limited to this. For example, the light source may be fixed in the same way as the exposure device disclosed in Japanese Patent Laid-Open No. 2000-12422. Only the illumination light IL is scanned in the scanning direction.

In addition, the illumination area IAM and the exposure area IA are formed in the shape of a strip extending in the Y-axis direction in the above embodiment, but it is not limited to this. For example, as disclosed in the specification of US Patent No. 5,729,331, the plural numbers are arranged in a zigzag shape. Combine the regions.

In addition, in the above embodiment, the mask M and the substrate P are arranged perpendicular to the horizontal plane (so-called tandem arrangement), but the present invention is not limited to this. The mask M and the substrate P may be arranged parallel to the horizontal plane. In this case, the optical axis of the illumination light IL is approximately parallel to the direction of gravity.

In addition, although the micro-positioning in the XY plane of the substrate P is performed according to the result of the alignment measurement during the scanning exposure operation, it can also be parallel to this, and the substrate can be obtained before the scanning exposure operation (or in parallel with the scanning exposure operation) The surface position information of P is used to control the surface position of the substrate P (the so-called auto-focus control) during the scanning exposure operation.

In addition, the use of the exposure device is not limited to the exposure device for liquid crystal that transfers the pattern of the liquid crystal display element to the square glass plate, but can also be widely applied to, for example, exposure devices for the manufacture of organic EL (Electro-Luminescence) panels and semiconductor manufacturing. The exposure equipment, the exposure equipment used to manufacture thin-film magnetic heads, micromachines and DNA chips. In addition, not only micro-elements such as semiconductor components, but also photomasks or reticles used in photo-exposure equipment, EUV exposure equipment, X-ray exposure equipment, and electronic line exposure equipment, to transfer circuit patterns Exposure devices to glass substrates or silicon wafers.

In addition, the object to be exposed is not limited to a glass plate, and may be other objects such as a wafer, a ceramic substrate, a thin film member, or a mask master. In addition, when the exposure target is a substrate for a flat-panel display, the thickness of the substrate is not particularly limited, and includes, for example, a sheet (a flexible sheet-like member). In addition, the exposure apparatus of this embodiment is particularly effective when exposing a substrate having a side length or a diagonal length of 500 mm or more. In addition, when the substrate to be exposed is a flexible sheet (sheet), the sheet may be formed in a roll shape. In this case, there is no need to rely on the stepping action of the stage device, as long as the reel is rotated (winding), it is easy to change (step move) the area of the exposure object relative to the illumination area (illumination light).

Electronic components such as liquid crystal display components (or semiconductor components) are processed through the steps of designing the function and performance of the components, the steps of making masks (or reticles) according to this design step, and the production of glass substrates (or wafers). Step: The photolithography step of transferring the pattern of the mask (reticle) to the glass substrate by the exposure device and the exposure method of the above-mentioned embodiments, the developing step of developing the exposed glass substrate, and the remaining photoresist The exposed member outside the part is manufactured by an etching step in which the photoresist is removed by etching, a photoresist removal step in which unnecessary photoresist is removed after the etching is completed, a component assembly step, an inspection step, and the like. In this case, in the lithography step, the exposure device of the above-mentioned embodiment is used to implement the aforementioned exposure method to form a device pattern on the glass substrate, so that a high-integrity device can be manufactured with good productivity. Availability on the industry

As explained above, the exposure device and method of the present invention are suitable for scanning and exposing objects. Moreover, the manufacturing method of the flat panel display of the present invention is suitable for the production of flat panel displays. In addition, the device manufacturing method of the present invention is suitable for the production of micro devices.

10: Liquid crystal exposure device 20: Illumination system 22: Illumination system body 30: Mask stage device 32: Stage body 40: Projection optics system 42: Projection system body 44: Drive system 46: Measurement system 50: Substrate stage device 52: stage body 60: alignment system 62: alignment microscope 66: drive system 70: calibration sensor 72: reference mark 74: mark 78: mechanical block 80: guide 82: ruler 84, 86: read head 90 : Main control device CP: The position where the calibration sensor is used for calibration (calibration position) IA: Exposure area IAM: Illumination area IL: Illumination light M: Mask Mk: Alignment mark P: Substrate S ₁ ～S ₄ : Irradiated area

[Fig. 1] is a conceptual diagram of a liquid crystal exposure apparatus according to an embodiment. [Fig. 2] A block diagram showing the input/output relationship of the main control device with the control system of the liquid crystal exposure device shown in Fig. 1 as the center. [FIG. 3(a) ~ FIG. 3(c)] are diagrams for explaining the operation of the calibration sensor included in the liquid crystal exposure device of FIG. 1. [Fig. 4(a) to Fig. 4(d)] are diagrams for explaining the operation of the liquid crystal exposure device during the exposure operation (Part 1 to Part 4). [Figure 5] A graph generated in the calibration of the illumination system and the projection optical system. [Fig. 6] is a diagram showing the mark image formed in the projection area during the calibration of the illumination system and the projection optical system. [Fig. 7] is a diagram showing another example of the alignment of the illumination system and the projection optical system.

10: Liquid crystal exposure device

20: Lighting Department

22: The main body of the lighting system

30: Mask stage device

40: Projection Optics

42: projection system body

50: substrate stage device

52: The main body of the stage

62: Align the microscope

70: Calibrate the sensor

IA: exposure area

IAM: lighting area

IL: Illumination light

M: Mask

Mk: Alignment mark

P: substrate

Claims (36)

An exposure device that emits light from an illuminating system to an object through a projection optical system, and moves the illuminating system and the projection optical system relative to the object in the scanning direction to scan and expose the object to form a predetermined pattern on the object. The object is provided with: a first drive system that moves the illumination system to the scanning direction; a second drive system that moves the projection optical system to the scanning direction; an acquisition unit that acquires and uses The first and second driving systems move the illumination system and the projection optical system to the scanning direction of the information related to the position; and the control system, in the scanning exposure, according to the information to make the illumination system and the projection The first and second driving systems are driven and controlled in such a way that the positional relationship of the optical system changes within a predetermined range; the acquisition part has a light receiving part that receives light passing through the projection optical system; and the first driving system causes the illumination from The illumination system moves by moving the incident position of the light to the projection optical system from the first position to the second position; the acquisition unit receives the light when the incident position of the light is in the first and second positions Obtain the information from the results of the light reception of the department. For example, the exposure device of the first item of the scope of patent application, wherein the predetermined range is the range within the allowable range of the imaging performance of the projection optical system according to the change of the light from the illumination system through the area in the projection optical system . Such as the exposure device of the second item of the scope of patent application, wherein the predetermined range is a range within the allowable range according to the change of the image of the predetermined pattern formed on the object according to the change of the imaging performance. For example, the exposure device of item 1 of the scope of patent application, wherein the light-receiving part has a fiducial mark; and further has a mark detection system for detecting the fiducial mark, and the mark detection system to the scan The third drive system moves to the detection position of the reference mark; the control system controls the second and third drive systems to obtain the relative first position of the projection optical system and the mark detection system through the reference mark relation. For example, the exposure device of item 4 of the scope of patent application, wherein the mark detection system has a first mark detection system for detecting a mark provided on the object, and a second mark detection system for detecting a mark provided on a mask with the predetermined pattern Department; The control system, based on the detection result of the one label detection system and the detection result of the other label detection system when one of the first and second label detection systems detects the fiducial mark, to obtain the The relative second positional relationship between the first and second mark detection systems. For example, the exposure device of item 5 of the scope of patent application, wherein at least a part of the elements constituting the first mark detection system and the elements constituting the second mark detection system are common. For example, the exposure device of item 5 or 6 of the scope of patent application, wherein the control system obtains the relative third positional relationship between the reference mark and the projected image of the predetermined mark projected to the light receiving part by the projection optical system. For example, the exposure device of item 7 of the scope of patent application, wherein the control system obtains the relative fourth positional relationship between the projection optical system and the reference mark, and obtains the fourth positional relationship based on the second, third, and fourth positional relationship The first positional relationship. For example, the exposure device of item 5 or 6 of the scope of patent application, wherein the another mark detection is to detect the mark provided on the photomask when the one mark detection is to detect the fiducial mark. For example, the exposure device of item 9 of the scope of patent application, wherein the control system obtains the third positional relationship based on the projection image projected by the projection optical system and the fiducial mark of the mark provided on the mask. For example, the exposure device of any one of items 4 to 6 in the scope of patent application, wherein the fiducial mark is provided on the moving path of the projection optical system. An exposure device that forms a pattern on the object by scanning the energy beam in the scanning direction against the object, and is provided with: a first mark detection system, which is set to move in the scanning direction and detectable The pattern side mark of the pattern holder with the pattern; the first drive system moves the first mark detection system in the scanning direction; the second mark detection system is set to move in the scanning direction, Detect the object-side mark provided on the object; the second drive system moves the second mark detection system in the scanning direction; and the control device performs the pattern based on the output of the first and second mark detection systems The relative positions of the holding body and the object are aligned; at least a part of the elements constituting the first drive system and the elements constituting the second drive system are common. For example, the exposure device of item 12 of the scope of patent application, wherein the first and second mark detection systems can simultaneously detect the pattern side mark and the object side mark. For example, the exposure device of any one of items 1 to 6, 12, and 13 in the scope of patent application, wherein the optical axis of the projection optical system is parallel to the horizontal plane; the object is opposed to the exposure surface illuminated by the illumination light The horizontal plane is arranged in an orthogonal state. For example, the exposure device of any one of items 1 to 6, 12, and 13 in the scope of patent application, wherein the object system is used for the substrate of a flat-panel display device. For example, the exposure device of item 15 of the scope of patent application, wherein the length of at least one side or the diagonal length of the substrate is more than 500mm. A method for manufacturing a flat-panel display includes: using the exposure device of any one of the scope of the patent application to expose the object; and the operation of developing the object after exposure. A method for manufacturing an element, which comprises: the operation of exposing the object by using the exposure device of any one of items 1 to 16 in the scope of the patent application; and the operation of developing the object after the exposure. An exposure method that emits light from an illumination system to an object through a projection optical system, and moves the illumination system and the projection optical system relative to the object in the scanning direction to scan and expose the object to form a predetermined pattern on the object. The object includes: using the first drive system to move the illumination system to the scanning direction; using the second drive system to move the projection optical system to the scanning direction; using the acquisition unit to obtain and borrow The operation of the first and second driving systems to make the illumination system and the projection optical system move in the scanning direction with information related to the position; and in the scanning exposure, the illumination system and the projection system are made based on the information The change of the positional relationship of the optical system controls the actions of the first and second drive systems in a predetermined range; further includes the action of receiving light passing through the projection optical system using the light receiving unit; in the action of moving the illumination system , Move the light from the illumination system to the projection optical system from the first position to the second position; in the above-mentioned acquisition operation, the acquisition unit is used according to the light’s entrance position in the first position And the second position, the light receiving result of the light receiving part, to obtain the information. For example, the exposure method of item 19 of the scope of patent application, wherein the predetermined range is the range within which the imaging performance of the projection optical system changes within the allowable range based on the change of the light from the illumination system through the area within the projection optical system . For example, the exposure method of item 20 of the scope of patent application, wherein the predetermined range is a range within the allowable range of the change of the image of the predetermined pattern formed on the object according to the change of the imaging performance. For example, the exposure method of item 19 in the scope of the patent application, wherein the light-receiving part has a fiducial mark; and further includes an action of detecting the fiducial mark using a mark detecting system; and driving the mark detecting system to the fiducial mark using a third drive system The operation of the detection position; the control is to control the second and third drive systems to obtain the relative first positional relationship between the projection optical system and the mark detection system through the reference mark. For example, the exposure method of item 22 of the scope of patent application, wherein the mark detection system has a first mark detection system for detecting the mark provided on the object, and a second mark detection system for the mark provided on the mask with the predetermined pattern ; In the control, based on the detection result of the one label detection system and the detection result of the other label detection system when one of the first and second label detection systems detects the fiducial mark, the first and second label detection systems are calculated The relative second positional relationship between the 1 and the second mark detection system. For example, the exposure method of item 23 in the scope of patent application, wherein at least a part of the elements constituting the first label detection system and the elements constituting the second label detection system are common. For example, the exposure method of item 23 or 24 of the scope of patent application, wherein, in the control, the third positional relationship between the reference mark and the projection image projected to the light receiving part by the projection optical system is obtained . For example, the exposure method of item 25 of the scope of patent application, wherein, in the control, the relative fourth positional relationship between the projection optical system and the fiducial mark is obtained, and the second, third, and fourth positional relationship is obtained Draw out the first positional relationship. For example, the exposure method of item 23 or 24 of the scope of patent application, wherein the another mark detection is to detect the mark provided on the photomask when the one mark detection is to detect the fiducial mark. For example, the exposure method of item 27 of the scope of patent application, wherein, in the control, the first mark is obtained based on the projection image projected by the projection optical system and the fiducial mark of the mark provided on the mask 3Position relationship. For example, the exposure method of any one of items 22 to 24 in the scope of the patent application, wherein the fiducial mark is provided on the moving path of the projection optical system. An exposure method is to form a pattern on the object by scanning the energy beam in the scanning direction relative to the object, which includes: using a first mark detection system set to move in the scanning direction, detecting The movement of the pattern side mark of the pattern holder of the pattern; the movement of using the first drive system to move the first mark detection system in the scanning direction; the use of the second mark detection system set to move in the scanning direction , The action of detecting the object-side mark provided on the object; the action of using the second drive system to move the second mark detection system in the scanning direction; and performing the pattern based on the output of the first and second mark detection systems The action of aligning the relative positions of the holding body and the object; at least a part of the elements constituting the first drive system and the elements constituting the second drive system are common. For example, the exposure method of item 30 of the scope of patent application, wherein the first and second mark detection systems can simultaneously detect the pattern side mark and the object side mark. For example, the exposure method of any one of items 19 to 24, 30, and 31 in the scope of the patent application, wherein the optical axis of the projection optical system is parallel to the horizontal plane; the object is opposed to the exposure surface illuminated by the illumination light The horizontal plane is arranged in an orthogonal state. Such as the exposure method of any one of items 19 to 24, 30, and 31 in the scope of the patent application, wherein the object system is used for the substrate of a flat-panel display device. For example, the exposure method of item 33 of the scope of patent application, wherein the length of at least one side or the diagonal length of the substrate is more than 500mm. A method for manufacturing a flat panel display, which includes: The action of exposing the object using any one of the exposure methods of items 19 to 34 in the scope of the patent application; and the action of developing the object after exposure. A method for manufacturing an element, which includes: the operation of exposing the object by using the exposure method of any one of the 19th to 34th items of the scope of patent application; and the operation of developing the object after the exposure.

Images