TWI663195B - Insulating film and semiconductor device - Google Patents
Insulating film and semiconductor device Download PDFInfo
- Publication number
- TWI663195B TWI663195B TW104108757A TW104108757A TWI663195B TW I663195 B TWI663195 B TW I663195B TW 104108757 A TW104108757 A TW 104108757A TW 104108757 A TW104108757 A TW 104108757A TW I663195 B TWI663195 B TW I663195B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- component
- film
- thermal conductivity
- insulating
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
- C08L9/02—Copolymers with acrylonitrile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
-
- H10W40/251—
-
- H10W70/695—
-
- H10W74/47—
-
- H10W74/473—
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2309/00—Characterised by the use of homopolymers or copolymers of conjugated diene hydrocarbons
- C08J2309/02—Copolymers with acrylonitrile
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2363/00—Characterised by the use of epoxy resins; Derivatives of epoxy resins
- C08J2363/04—Epoxynovolacs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Organic Insulating Materials (AREA)
- Insulating Bodies (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Epoxy Resins (AREA)
- Die Bonding (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
本案的課題是提供一種絕緣薄膜,其薄膜特性優異且硬化後耐熱性優異,並具有3.0W/mK以上之熱傳導率。 The object of this case is to provide an insulating film which has excellent film characteristics and excellent heat resistance after curing, and has a thermal conductivity of 3.0 W / mK or more.
本案的解決手段係提供一種絕緣薄膜,其含有(A)酚醛清漆型環氧樹脂、(B)丁二烯丙烯腈共聚物、(C)芳烷基酚樹脂、(D)硬化觸媒、及(E)熱傳導率為20W/mK以上之絕緣填充劑,其中,(B)成份係相對於(A)至(C)成份之合計100質量份為10至20質量份,且(E)成份係相對於絕緣薄膜100體積%為60至85體積%。 The solution to this case is to provide an insulating film containing (A) a novolac epoxy resin, (B) a butadiene acrylonitrile copolymer, (C) an aralkylphenol resin, (D) a hardening catalyst, and (E) An insulating filler having a thermal conductivity of 20 W / mK or more, in which the component (B) is 10 to 20 parts by mass based on 100 parts by mass of the total of the components (A) to (C), and the component (E) is It is 60 to 85% by volume based on 100% by volume of the insulating film.
Description
本發明係關於絕緣薄膜、及半導體裝置,尤其是關於硬化後耐熱性及熱傳導性優異之絕緣薄膜、及含有此絕緣薄膜之硬化物之可靠度高之半導體裝置。 The present invention relates to an insulating film and a semiconductor device, and more particularly to an insulating film having excellent heat resistance and thermal conductivity after curing, and a semiconductor device having a high reliability of a cured product containing the insulating film.
於功率元件(power device)等半導體裝置之領域中,高熱傳導性絕緣材料之要求越來越高。另一方面,半導體裝置之製程中,製造中的半導體裝置有時會因為透過焊接等而暴露於高溫,此外,為了提升半導體裝置之耐熱可靠度,半導體裝置所使用之半導體用接著劑要求耐熱性。就改良此耐熱性之材料而言,已有揭露一種保護膜層用封止劑,其含有甲酚酚醛清漆型環氧樹脂、酚芳烷基樹脂、及酚改質二甲苯樹脂(專利文獻1)。 In the field of semiconductor devices such as power devices, high thermal conductivity insulating materials are increasingly required. On the other hand, in the manufacturing process of semiconductor devices, semiconductor devices in manufacture may be exposed to high temperatures due to soldering. In addition, in order to improve the reliability of the heat resistance of semiconductor devices, the semiconductor adhesive used in semiconductor devices requires heat resistance. . As a material for improving this heat resistance, there has been disclosed a sealing agent for a protective film layer, which contains a cresol novolac type epoxy resin, a phenol aralkyl resin, and a phenol modified xylene resin (Patent Document 1) ).
另一方面,近年來,由於處理的容易度,故越來越常使用接著薄膜來取代接著劑。此時,接著薄膜係塗佈於聚對苯二甲酸乙二酯(PET)等基材薄膜上,於未硬化狀態下作為經乾燥處理之塗膜來供給,故接著薄膜必須具有柔軟性及可撓性等薄膜特性。 On the other hand, in recent years, because of the ease of handling, an adhesive film is increasingly used instead of an adhesive. At this time, the adhesive film is coated on a substrate film such as polyethylene terephthalate (PET), and is supplied as a dried coating film in an uncured state. Therefore, the adhesive film must be flexible and can be used. Film properties such as flexibility.
[專利文獻] [Patent Literature]
[專利文獻1]日本特開2009-91424號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2009-91424
惟,由於是作為高熱傳導用途來使用,於含有上述甲酚酚醛清漆型環氧樹脂、酚芳烷基樹脂、及酚改質二甲苯樹脂之保護膜層用封止劑中,高度填充高熱傳導填充劑時,有乾燥塗膜會變得硬且脆,無法薄膜化之問題。 However, since it is used for high thermal conductivity, it is highly filled with high thermal conductivity in the sealant for protective film layers containing the above-mentioned cresol novolac epoxy resin, phenol aralkyl resin, and phenol modified xylene resin. In the case of a filler, there is a problem that the dried coating film becomes hard and brittle and cannot be thinned.
於是,本發明之目的係提供一種絕緣薄膜,其薄膜特性優異且硬化後耐熱性優異,並具有3.0W/mK以上之熱傳導率。 Therefore, an object of the present invention is to provide an insulating film which has excellent film characteristics and excellent heat resistance after curing, and has a thermal conductivity of 3.0 W / mK or more.
本發明係關於藉由具有下述構成以解決上述問題之絕緣薄膜及半導體裝置。 The present invention relates to an insulating film and a semiconductor device which have the following constitutions to solve the above-mentioned problems.
[1]一種絕緣薄膜,其含有(A)酚醛清漆型環氧樹脂、(B)丁二烯丙烯腈共聚物、(C)芳烷基酚樹脂、(D)硬化觸媒、及(E)熱傳導率為20W/mK以上之絕緣填充劑,其中,(B)成份為相對於(A)至(C)成份之合計100質量份為10至20質量份,且(E)成份為相對於絕緣薄膜100體積%為60至85體積%。 [1] An insulating film containing (A) a novolac epoxy resin, (B) a butadiene acrylonitrile copolymer, (C) an aralkylphenol resin, (D) a hardening catalyst, and (E) Insulating fillers with a thermal conductivity of 20 W / mK or more, wherein (B) component is 10 to 20 parts by mass with respect to 100 parts by mass of the total of (A) to (C) ingredients, and (E) is relative to the insulator The film 100% by volume is 60 to 85% by volume.
[2]如上述[1]所述之絕緣薄膜,其中,(D)成份為咪唑系硬化觸媒。 [2] The insulating film according to the above [1], wherein the component (D) is an imidazole-based hardening catalyst.
[3]如上述[1]或[2]所述之絕緣薄膜,其中,(E)成份為 選自氧化鋁、氧化鎂、及氮化硼所成群組之至少1種。 [3] The insulating film according to the above [1] or [2], wherein the component (E) is At least one selected from the group consisting of alumina, magnesia, and boron nitride.
[4]如上述[1]至[3]中任一者所述之絕緣薄膜,其中,(E)成份為含有平均粒徑為0.1至0.8μm之絕緣填充劑(E1)、平均粒徑為2至6μm之絕緣填充劑(E2)、及平均粒徑為7至30μm之絕緣填充劑(E3)。 [4] The insulating film according to any one of the above [1] to [3], wherein the (E) component contains an insulating filler (E1) having an average particle diameter of 0.1 to 0.8 μm, and the average particle diameter is An insulating filler (E2) of 2 to 6 μm and an insulating filler (E3) having an average particle diameter of 7 to 30 μm.
[5]如上述[4]所述之絕緣薄膜,其中,(E3)成份之平均粒徑為15至30μm。 [5] The insulating film according to the above [4], wherein the average particle diameter of the (E3) component is 15 to 30 μm.
[6]一種半導體裝置,其含有如上述[1]至[5]之任一者所述之絕緣薄膜之硬化物。 [6] A semiconductor device comprising the cured product of the insulating film according to any one of the above [1] to [5].
根據本發明[1],可提供一種絕緣薄膜,其薄膜特性優異且硬化後耐熱性優異,並具有3.0W/mK以上之熱傳導率。 According to the present invention [1], it is possible to provide an insulating film which has excellent film characteristics and excellent heat resistance after hardening, and has a thermal conductivity of 3.0 W / mK or more.
根據本發明[6],可藉由耐熱性、熱傳導性優異之絕緣薄膜之硬化體,來提供一種高可靠度之半導體裝置。 According to the present invention [6], a highly reliable semiconductor device can be provided by a hardened body of an insulating film excellent in heat resistance and thermal conductivity.
第1圖(A)至(E)係用以說明刮取塗佈之方法的示意圖。 Figures 1 (A) to (E) are schematic diagrams for explaining the method of blade coating.
本發明之絕緣薄膜係含有(A)酚醛清漆型環氧樹脂、(B)丁二烯丙烯腈共聚物、(C)芳烷基酚樹脂、(D)硬化觸媒、 及(E)熱傳導率為20W/mK以上之絕緣填充劑,其中,(B)成份為相對於(A)至(C)成份之合計100質量份為10至20質量份,且(E)成份為相對於絕緣薄膜100體積%為60至85體積%。 The insulating film of the present invention contains (A) a novolac epoxy resin, (B) a butadiene acrylonitrile copolymer, (C) an aralkylphenol resin, (D) a hardening catalyst, And (E) an insulating filler having a thermal conductivity of 20 W / mK or more, wherein (B) component is 10 to 20 parts by mass with respect to 100 parts by mass of the total of (A) to (C) ingredients, and (E) ingredient It is 60 to 85% by volume with respect to 100% by volume of the insulating film.
(A)成份係對絕緣薄膜賦予耐熱性。就耐熱性之觀點來看,(A)成份係以甲酚酚醛清漆型環氧樹脂為佳,此甲酚酚醛清漆型環氧樹脂係可具體的舉出下述式(1)所示之甲酚酚醛清漆型環氧樹脂。 The (A) component imparts heat resistance to an insulating film. From the viewpoint of heat resistance, the component (A) is preferably a cresol novolac type epoxy resin. The cresol novolac type epoxy resin can be specifically exemplified by the following formula (1) Novolac novolac epoxy resin.
(式中,n係表示平均值,為1至10,以1至5為佳。) (In the formula, n represents an average value, and is 1 to 10, preferably 1 to 5.)
(A)成份之環氧當量,從絕緣薄膜用組成物之硬化後的耐熱性的觀點來看,以150至300g/eq為佳。於後說明絕緣薄膜用組成物。就(A)成份之市售品而言,可舉出DIC製甲酚酚醛清漆型環氧樹脂(品名:N-665-EXP)。(A)成份係可單獨使用,亦可併用2種以上。 The epoxy equivalent of the component (A) is preferably from 150 to 300 g / eq from the viewpoint of heat resistance after curing of the composition for an insulating film. The composition for an insulating film will be described later. Examples of commercially available products of the component (A) include cresol novolac epoxy resin (product name: N-665-EXP) made by DIC. (A) Ingredients can be used alone or in combination of two or more.
(B)成份係用於柔軟性等薄膜特性,可使用常溫下為液體者。(B)成份係可舉出於常溫下為液狀,例如 平均分子量較低之丁二烯丙烯腈共聚物。此外,(B)成份係可使用於末端具有與環氧基反應之基團的丁二烯丙烯腈共聚物。(B)成份,尤其從與(A)酚醛清漆型環氧樹脂之反應性以及對(A)酚醛清漆型環氧樹脂之相溶性之觀點來看,以羧基末端丁二烯丙烯腈共聚物、胺基末端丁二烯丙烯腈共聚物、環氧基末端丁二烯丙烯腈共聚物為佳。此等丁二烯丙烯腈共聚物之丙烯腈含量以10至40質量%為佳,15至30質量%為更佳。為羧基末端丁二烯.丙烯腈共聚物時,羧基比率係以1.8至3.0%為佳。(B)成份係以重量平均分子量為3,000至5,000者為佳。重量平均分子量係透過凝膠滲透層析法(GPC),使用標準聚苯乙烯之校正曲線而得值。就(B)成份之市售品而言,可舉出宇部興產製丁二烯丙烯腈橡膠(品名:HYCAR CTBN1300)。(B)成份係可單獨使用,亦可併用2種以上。 The component (B) is used for film properties such as flexibility, and can be used as a liquid at normal temperature. (B) The ingredients are liquid at normal temperature, for example Butadiene acrylonitrile copolymer with lower average molecular weight. In addition, the (B) component can be used for a butadiene acrylonitrile copolymer having a terminal that reacts with an epoxy group at the terminal. The component (B) is particularly carboxyl-terminated butadiene acrylonitrile copolymer from the viewpoint of reactivity with (A) novolac epoxy resin and compatibility with (A) novolac epoxy resin, Amine-terminated butadiene acrylonitrile copolymer and epoxy-terminated butadiene acrylonitrile copolymer are preferred. The acrylonitrile content of these butadiene acrylonitrile copolymers is preferably 10 to 40% by mass, and more preferably 15 to 30% by mass. For carboxy-terminal butadiene. In the case of an acrylonitrile copolymer, the carboxyl ratio is preferably 1.8 to 3.0%. The component (B) is preferably one having a weight average molecular weight of 3,000 to 5,000. The weight average molecular weight is obtained by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene. Examples of commercially available products of the component (B) include butadiene acrylonitrile rubber (product name: HYCAR CTBN1300) manufactured by Ube Industries. (B) Ingredients can be used alone or in combination of two or more.
就(C)成份而言,可舉出以下述式(2)所示之芳烷基酚樹脂。 Examples of the component (C) include an aralkylphenol resin represented by the following formula (2).
(式中,R1係獨立表示鹵素原子、羥基、碳數1至10之直鏈、分支或環狀烷基、碳數1至10之烷氧基、或苯基, r係表示0至3之整數,r以0為佳,m係表示平均值,為1至10,以1至5為佳,又以1為更佳。) (Wherein R 1 independently represents a halogen atom, a hydroxyl group, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a phenyl group, and r represents 0 to 3 For integers, r is preferably 0, and m represents the average value, which is 1 to 10, preferably 1 to 5, and more preferably 1.)
藉由加入(C)成份,可謀圖硬化後之絕緣薄膜之耐熱性、耐裂縫性之提升。就(C)成份之市售品而言,可舉出三井化學製芳烷基酚樹脂(品名:XLC4L)。 By adding the (C) component, it is possible to improve the heat resistance and crack resistance of the cured insulating film. Examples of the commercially available product of the component (C) include an aralkylphenol resin (product name: XLC4L) manufactured by Mitsui Chemicals.
(D)成份係只要為具有絕緣薄膜之硬化能者即可。藉由(D)成份,可縮短絕緣薄膜之硬化時間,可縮短硬化步驟。此外,藉由(D)成份,絕緣薄膜之硬化性提升,硬化後之絕緣薄膜成為良好之特性。就(D)成份而言,可舉出咪唑系硬化觸媒、胺系硬化觸媒、羧酸二醯肼(dihydrazide)硬化觸媒等。從絕緣薄膜之硬化性之觀點來看,咪唑系硬化觸媒為更佳。 The component (D) is only required to have a hardening ability with an insulating film. With the (D) component, the curing time of the insulating film can be shortened, and the curing step can be shortened. In addition, with the (D) component, the hardenability of the insulating film is improved, and the cured insulating film has good characteristics. Examples of the component (D) include imidazole-based hardening catalysts, amine-based hardening catalysts, and carboxylic acid dihydrazide hardening catalysts. From the viewpoint of the hardenability of the insulating film, an imidazole-based hardening catalyst is more preferable.
就咪唑硬化觸媒而言,可舉出2-甲基咪唑、2-十一基咪唑、2-十七基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2,4-二胺-6-[2’-甲基咪唑-(1’)]乙基-s-三、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,3-二氫-1H-吡咯並[1,2-a]苯并咪唑等,從絕緣薄膜之硬化速度之觀點來看,以2-乙基-4-甲基咪唑、2,4-二胺-6-[2’-甲基咪唑-(1’)]乙基-s-三等為佳。 Examples of the imidazole curing catalyst include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2- Phenyl-4-methylimidazole, 2,4-diamine-6- [2'-methylimidazole- (1 ')] ethyl-s-tri , 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo [1,2-a ] Benzimidazole and the like, from the viewpoint of the curing speed of the insulating film, 2-ethyl-4-methylimidazole, 2,4-diamine-6- [2'-methylimidazole- (1 ') ] Ethyl-s-tri And so on.
就胺系硬化觸媒而言,可舉出鏈狀脂肪族胺、環狀脂肪族胺、脂肪芳香族胺、芳香族胺等,以芳香族胺為佳。就羧酸二醯肼硬化觸媒而言,可舉出己二酸二醯肼、間苯二甲酸二醯肼、癸二酸二醯肼、十二酸二醯肼等,以己二酸二醯肼為佳。 Examples of the amine-based curing catalyst include a chain aliphatic amine, a cyclic aliphatic amine, a fatty aromatic amine, and an aromatic amine, and an aromatic amine is preferred. Examples of the carboxylic acid dihydrazide curing catalyst include dihydrazide adipate, dihydrazide isophthalate, dihydrazide sebacate, dihydrazide dodecanate, and the like. Halohydrazine is preferred.
就(D)成份之市售品而言,可舉出四國化成製2-乙基-4-甲基咪唑(品名:2E4MZ)、四國化成製2,4-二胺-6-[2’-甲基咪唑-(1’)]-乙基-s-三(品名:2MZ-A)、日本化藥製胺硬化劑(品名:KAYAHARD A-A)、日本FINECHEM製己二酸二醯肼(品名:ADH)等,但(D)成份並不限於此等者。(D)成份係可單獨使用,亦可併用2種以上。 Examples of commercially available products of the component (D) include 2-ethyl-4-methylimidazole (product name: 2E4MZ) manufactured by Shikoku Kasei and 2,4-diamine-6- [2 manufactured by Shikoku Kasei '-Methylimidazole- (1')]-ethyl-s-tri (Product name: 2MZ-A), Nippon Kasei amine hardener (Product name: KAYAHARD AA), Japan FINECHEM adipic acid dihydrazide (Product name: ADH), etc., but the (D) component is not limited to these. (D) Ingredients can be used alone or in combination of two or more.
就(E)成份而言,可舉出氧化鋁(alumina,Al2O3)、氧化鎂(MgO)、氧化亜鉛(ZnO)、氮化硼(BN)、碳化矽(SiC)、氮化鋁(AlN)、氮化矽(Si3N4)、鑽石等。(E)成份,就對熱傳導率、濕度等之耐久性之觀點來看,以選自氧化鋁、氧化鎂、及氮化硼所成群組之至少1種為佳。各材料之熱傳導率測定結果之一例係(單位為W/mK)Al2O3為20至40,MgO為45至60,ZnO為54,BN為30至80,SiC為140至170,AlN為150至250,Si3N4為30至80,鑽石為1000至2000。就(E)成份之市售品而言,可舉出電氣化學工業製球狀alumina(Al2O3)粉末(品名:ASFP-20、DAM-03、DAM-05、DAM-07)、昭和電工製球狀alumina(Al2O3)粉末(品名:CB-A20S)、Sakai化學工業製氧化鎂粉末(品名:SMO-05)。 Examples of the (E) component include alumina (Al 2 O 3 ), magnesium oxide (MgO), lead hafnium oxide (ZnO), boron nitride (BN), silicon carbide (SiC), and aluminum nitride. (AlN), silicon nitride (Si 3 N 4 ), diamond, etc. The (E) component is preferably at least one selected from the group consisting of aluminum oxide, magnesium oxide, and boron nitride from the viewpoint of durability to thermal conductivity and humidity. An example of the measurement results of the thermal conductivity of each material is (unit: W / mK) Al 2 O 3 is 20 to 40, MgO is 45 to 60, ZnO is 54, BN is 30 to 80, SiC is 140 to 170, and AlN is 150 to 250, Si 3 N 4 is 30 to 80, and diamonds are 1000 to 2000. As for the commercially available product of the (E) component, spherical alumina (Al 2 O 3 ) powder (product name: ASFP-20, DAM-03, DAM-05, DAM-07) manufactured by the Denka Chemical Industry, and Showa Spherical alumina (Al 2 O 3 ) powder (product name: CB-A20S) manufactured by Denko, and magnesium oxide powder (product name: SMO-05) manufactured by Sakai Chemical Industry.
(E)成份係以含有平均粒徑為0.1至0.8μm之絕緣填充劑(E1)、平均粒徑為2至6μm之絕緣填充劑(E1)、及平均粒徑為7至30μm之絕緣填充劑(E3)為佳。藉由組合此等粒徑之填充劑來使用,絕緣填充劑於絕緣薄膜中會更加緻密的分佈,故即使為相同絕緣填充劑量,可 使硬化後之絕緣薄膜之熱傳導率更高。於此,(E)成份之平均粒徑係藉由雷射解析式粒度分析計來測定。(E)成份係可單獨使用,亦可併用2種以上。 (E) The composition is composed of an insulating filler (E1) having an average particle diameter of 0.1 to 0.8 μm, an insulating filler (E1) having an average particle diameter of 2 to 6 μm, and an insulating filler having an average particle diameter of 7 to 30 μm. (E3) is preferred. By using these fillers in combination, the insulating filler will be more densely distributed in the insulating film, so even if it is the same insulating filler, The thermal conductivity of the cured insulating film is higher. Here, the average particle diameter of the (E) component is measured with a laser analytical particle size analyzer. (E) Ingredients can be used alone or in combination of two or more.
從熱傳導率之觀點來看,(E3)成份之平均粒徑若為15至30μm則更佳。藉由於(E)成份含有粒徑粗之填充劑,可於硬化後之絕緣薄膜賦予更高之熱傳導率。惟,若含有平均粒徑超過30μm之絕緣填充劑,會容易因為粗粒子,而發生使絕緣薄膜組成物之塗膜表面粗糙、損壞塗膜外觀、絕緣薄膜組成物之塗佈時產生條紋、損壞硬化後之絕緣薄膜之絕緣性等問題,故變得難以得到膜厚度薄之絕緣薄膜。 From the viewpoint of thermal conductivity, the average particle diameter of the (E3) component is more preferably 15 to 30 μm. Since the component (E) contains a filler having a coarse particle diameter, a higher thermal conductivity can be imparted to the cured insulating film. However, if it contains an insulating filler with an average particle size of more than 30 μm, coarse particles can easily cause the coating film surface of the insulating film composition to be rough, damage the appearance of the coating film, and cause streaks and damage during the coating of the insulating film composition. Problems such as the insulation properties of the cured insulating film make it difficult to obtain an insulating film with a thin film thickness.
(A)成份係以相對於(A)至(C)成份之合計100質量份為30至50質量份為佳。 The component (A) is preferably 30 to 50 parts by mass based on 100 parts by mass of the total of the components (A) to (C).
(B)成份係相對於(A)至(C)成份之合計100質量份為10至20質量份,未達10質量份時,絕緣薄膜會變硬,變得容易發生破裂等問題,無法得到薄膜特性。另一方面,(B)成份超過20質量份時,樹脂成份會變得太柔軟,(E)成份之絕緣填充劑之接觸變弱,故熱傳導率降低。 (B) The component is 10 to 20 parts by mass with respect to 100 parts by mass of the total of the components (A) to (C). When the amount is less than 10 parts by mass, the insulating film becomes hard, and problems such as cracking easily occur, which cannot be obtained. Film characteristics. On the other hand, when the component (B) exceeds 20 parts by mass, the resin component becomes too soft, and the contact of the insulating filler of the component (E) becomes weak, so the thermal conductivity decreases.
(C)成份之酚當量係以(A)成份之環氧當量之1.0至1.6倍為佳,以1.2至1.4倍為更佳。未達1.0倍時,無乏得到充分之耐熱性。另一方面,若(C)成份之酚當量超過1.6倍,硬化物變得硬且脆,變得容易破裂。 The phenol equivalent of the component (C) is preferably 1.0 to 1.6 times the epoxy equivalent of the (A) component, and more preferably 1.2 to 1.4 times. When it is less than 1.0 times, there is no lack of sufficient heat resistance. On the other hand, if the phenol equivalent of the component (C) exceeds 1.6 times, the hardened material becomes hard and brittle, and becomes easily broken.
(D)成份,從絕緣薄膜之保存安定性、硬化性之觀點來看,相對於(A)至(D)成份之合計100質量份, 以0.1至5質量份為佳。 (D) component, from the viewpoint of storage stability and hardenability of the insulating film, with respect to 100 parts by mass of the total of (A) to (D) component, It is preferably from 0.1 to 5 parts by mass.
(E)成份係相對於絕緣薄膜100體積%為60至85體積%,未達60體積%時,無法得到所要求之熱傳導率,若超過85體積%,絕緣薄膜用組成物之薄膜特性變差、絕緣薄膜變脆、硬化後之絕緣薄膜之接著強度降低。此外,相對於絕緣填充劑整體質量,以含有(E1)5至15質量%、(E2)5至55質量%、(E3)35至85質量%為佳。從熱傳導率之觀點來看,(E3)係以平均粒子径為15至30μm為佳、此時之(E3)係相對於絕緣填充劑整體質量含有30至50質量%為佳。 (E) The composition is 60 to 85% by volume with respect to 100% by volume of the insulating film. If it is less than 60% by volume, the required thermal conductivity cannot be obtained. If it exceeds 85% by volume, the film characteristics of the composition for the insulating film are deteriorated 3. The insulation film becomes brittle, and the bonding strength of the insulation film after hardening is reduced. In addition, it is preferable to contain (E1) 5 to 15 mass%, (E2) 5 to 55 mass%, and (E3) 35 to 85 mass% with respect to the entire mass of the insulating filler. From the viewpoint of thermal conductivity, (E3) is preferably an average particle diameter of 15 to 30 μm, and at this time (E3) is preferably 30 to 50% by mass based on the entire mass of the insulating filler.
用以形成絕緣薄膜之絕緣薄膜用組成物(以下亦稱為組成物)係含有上述(A)至(E)成份。再者,絕緣薄膜用組成物在不損害本發明之效果的範圍,可含有矽烷耦合劑、黏著性賦予劑、消泡劑、流動調整劑、成膜輔助劑、分散劑等添加劑、有機溶劑。 The composition for an insulating film (hereinafter also referred to as a composition) for forming an insulating film contains the above components (A) to (E). In addition, the composition for an insulating film may contain additives such as a silane coupling agent, an adhesion-imparting agent, a defoaming agent, a flow modifier, a film-forming aid, and a dispersant, and an organic solvent so long as the effects of the present invention are not impaired.
就有機溶劑而言,可舉出芳香族系溶劑,例如甲苯、二甲苯等,及酮系溶劑,例如甲基乙基酮(MEK)、甲基異丁基酮等。有機溶劑係可單獨使用,亦可組合2種以上來使用。此外,有機溶劑之使用量並無特別限制,以固形分成為20至50質量%之方式來使用為佳。從作業性之觀點來看,絕緣薄膜用組成物係200至3000mPa.s之黏度之範圍為佳。黏度係使用E型黏度計以轉數10rpm、25 ℃所測定之值。 Examples of the organic solvent include aromatic solvents such as toluene and xylene, and ketone solvents such as methyl ethyl ketone (MEK) and methyl isobutyl ketone. The organic solvents may be used alone or in combination of two or more. In addition, the use amount of the organic solvent is not particularly limited, and it is preferable to use it so that the solid content becomes 20 to 50% by mass. From the viewpoint of workability, the composition for an insulating film is 200 to 3000 mPa. The range of viscosity of s is preferable. Viscosity is based on E-type viscometer at 10 rpm, 25 Measured at ℃.
此組成物係可藉由於含有於有機溶劑所溶解之(A)至(D)成份之液狀原料使(E)成份分散來得到。就此等原料之溶解或分散等裝置而言,並無特別限制,但可使用溶解器、行星式混合機、磨碎機、三輥研磨機、球磨機、珠磨機等。此等裝置亦可具備加熱裝置。亦可適當組合此等裝置來使用。 This composition is obtained by dispersing the component (E) due to a liquid raw material containing the components (A) to (D) dissolved in an organic solvent. There is no particular limitation on the device for dissolving or dispersing such raw materials, but a dissolver, a planetary mixer, a grinder, a three-roll mill, a ball mill, a bead mill, or the like can be used. These devices may also be provided with heating devices. These devices can also be used in appropriate combination.
絕緣薄膜係藉由將上述組成物塗佈於所期望之支持體後使其乾燥而得。支持體並無特別限制,可舉出銅、鋁等金屬箔、聚酯樹脂、聚乙烯樹脂、聚對苯二甲酸乙二酯樹脂等有機薄膜等。支持體係能以矽系化合物等進行脫模處理。 The insulating film is obtained by applying the composition to a desired support and then drying it. The support is not particularly limited, and examples thereof include metal foils such as copper and aluminum, polyester resins, polyethylene resins, and organic films such as polyethylene terephthalate resins. The support system can be demolded with silicon compounds.
將組成物於支持體塗佈之方法並無特別限制,從薄膜化、膜厚度控制之觀點來看,以微照相凹版法、縫口模頭(slot die)法、刮刀法為佳。藉由縫口模頭法,可得到熱硬化後之厚度成為10至300μm之絕緣薄膜。 The method of coating the composition on a support is not particularly limited, and from the viewpoints of thin film formation and film thickness control, a micro gravure method, a slot die method, and a doctor blade method are preferred. By the slit die method, an insulating film having a thickness of 10 to 300 μm after heat curing can be obtained.
乾燥條件係可依組成物所使用之有機溶劑之種類或量、塗佈厚度等適當的設定,例如可設為以50至120℃、1至30分鐘左右。如此而得之絕緣薄膜係具有良好之保存安定性。再者,絕緣薄膜係可在所期望之時點從支持體剝離。 The drying conditions can be appropriately set depending on the type or amount of the organic solvent used in the composition, the coating thickness, and the like, and can be set at, for example, 50 to 120 ° C. for about 1 to 30 minutes. The insulating film thus obtained has good storage stability. The insulating film can be peeled from the support at a desired time.
絕緣薄膜係可例如於130至220℃、以30至180分鐘使其熱硬化而接著被接著物。接著發熱體之被接著物與受熱體之被接著物時,經硬化之絕緣薄膜係發揮將 發熱體之被接著物來的熱予以傳至受熱體之被接著物側,而於受熱體之被接著物側放熱之作用。進一步,經硬化之絕緣薄膜係發揮減緩發熱體之被接著物與受熱體之被接著物之間之熱膨脹率之差所引起之應力之作用。 The insulating film can be thermally cured at 130 to 220 ° C. for 30 to 180 minutes, and then be adhered. When the adherend of the heating body and the adherend of the heating body are next, the hardened insulation film The heat from the adherend of the heating body is transferred to the adherend side of the heat-receiving body, and the heat is released from the adherend side of the heat-receiving body. Further, the hardened insulating film plays a role of reducing the stress caused by the difference in thermal expansion coefficient between the adherend of the heating element and the adherend of the heating element.
絕緣薄膜之厚度係以10μm以上300μm以下為佳,以20μm以上150μm以下為更佳。若未達10μm,則可能無法得到所期望之絕緣性。若超過300μm,則可能無法充分使會發熱之被接著物放熱。 The thickness of the insulating film is preferably 10 μm to 300 μm, and more preferably 20 μm to 150 μm. If it is less than 10 μm, the desired insulation properties may not be obtained. If it exceeds 300 μm, the adherend which generates heat may not be able to sufficiently radiate heat.
此外,經硬化之絕緣薄膜若熱傳導率為3W/mK以上則更佳。此外,若經硬化之絕緣薄膜之熱傳導率未達3W/mK,則從發熱體至受熱器之傳熱可能不充分。經硬化之絕緣薄膜之熱傳導率可藉由(E)成份之種類及含有量來控制。 In addition, a hardened insulating film is more preferable if it has a thermal conductivity of 3 W / mK or more. In addition, if the thermal conductivity of the hardened insulating film is less than 3 W / mK, the heat transfer from the heating element to the receiver may be insufficient. The thermal conductivity of the hardened insulating film can be controlled by the type and content of the (E) component.
經硬化之絕緣薄膜係以體積電阻率為1×1010Ω.cm以上為佳。高熱傳導層若體積電阻率為1×1012Ω.cm以上則更佳,為1×1013Ω.cm以上則再更佳。經硬化之絕緣薄膜之體積電阻率未達1×1010Ω.cm時,可能無法滿足半導體裝置所要求之絕緣性。 The hardened insulating film has a volume resistivity of 1 × 10 10 Ω. Above cm is preferred. If the volume resistivity of the high thermal conductivity layer is 1 × 10 12 Ω. Above cm is even better, 1 × 10 13 Ω. Above cm is even better. The volume resistivity of the hardened insulating film has not reached 1 × 10 10 Ω. cm, it may not be able to meet the insulation required by semiconductor devices.
本發明之半導體裝置係含有上述絕緣薄膜之硬化體。能藉由耐熱性、熱傳導性優異之絕緣薄膜之硬化體,提供高可靠度之半導體裝置。就半導體裝置而言,可舉出將模組或電子部品等發熱體與基板等受熱體以絕緣薄膜之 硬化物接著者、將接受來自發熱體之熱之基板與進一步從此基板接受熱之放熱板等以絕緣薄膜之硬化物接著者。 The semiconductor device of the present invention is a hardened body containing the above-mentioned insulating film. A highly reliable semiconductor device can be provided by a hardened body of an insulating film having excellent heat resistance and thermal conductivity. Examples of the semiconductor device include a heat-generating body such as a module or an electronic component and a heat-receiving body such as a substrate with an insulating film. A hardened object, a substrate that receives heat from a heating element, and a heat-releasing plate that further receives heat from this substrate, such as a hardened object, with an insulating film.
雖藉由實施例說明本發明,但本發明不限制於此。再者,以下實施例中,若無特別註明,部、%係表示質量份、質量%。 Although the present invention is described by way of examples, the present invention is not limited thereto. In addition, in the following examples, unless otherwise specified, the part and% represent mass parts and mass%.
首先,分別將(A)成份、(B)成份、(C)成份用MEK以NV(不揮發分,即(A)至(C)成份)成為30質量%之方式予以溶解稀釋。其次,依(A)至(C)成份以及(D)成份、添加劑、(E)成份之順序,將各原材料之預定量量取至容器,以自轉.公轉式攪拌機(MAZERUSTAR)攪拌、混合5分鐘,其後,使用行星式混合機進行分散,以MEK將黏度調成1000至5000mPa.s而調配絕緣薄膜用組成物。 First, the (A) component, the (B) component, and the (C) component were each dissolved and diluted with MEK so that NV (non-volatile content, that is, (A) to (C) component) becomes 30% by mass. Secondly, according to the order of (A) to (C) ingredients and (D) ingredients, additives, (E) ingredients, a predetermined amount of each raw material is taken to a container for rotation. MAZERUSTAR was stirred and mixed for 5 minutes, and then dispersed using a planetary mixer, and the viscosity was adjusted to 1000 to 5000 mPa.s with MEK to prepare a composition for an insulating film.
將得到之絕緣薄膜用組成物於施有脫模劑之50μm厚之PET薄膜上以乾燥後之膜厚度成為200至500μm之方式進行刮取塗佈。第1圖係表示用以說明刮取塗佈之方法之示意圖。首先,於附有脫模劑之PET薄膜上,以成為適當厚度之方式將間隔物重疊2行後,以黏著膠帶貼附(第1圖(A))。於附有脫模劑之PET薄膜上注入適量之絕緣薄膜 用組成物(第1圖(B))。將載玻片置於間隔物上,將絕緣薄膜用組成物刮取、塗佈(第1圖(C)至(E))。其此,將經塗佈之絕緣薄膜用組成物充分乾燥後,將得到之絕緣薄膜從PET薄膜撕下,使用真空擠壓機(press machine),以200℃×60分鐘、0.1MPa之條件使其硬化。將經硬化之絕緣薄膜裁斷成10×10mm,製作熱傳導率測定用試驗片。以NETSCH公司製熱傳導率計(型號:LFF447Nanoflash)測定製作之熱傳導率測定用試驗片之熱傳導率。表1及表2為熱傳導率之測定結果。 The obtained composition for an insulating film was subjected to doctor blade coating on a 50 μm-thick PET film to which a release agent was applied so that the film thickness after drying became 200 to 500 μm. FIG. 1 is a schematic diagram illustrating a method of blade coating. First, on a PET film to which a mold release agent is attached, the spacers are overlapped by two lines so as to have an appropriate thickness, and then attached with an adhesive tape (Fig. 1 (A)). Put an appropriate amount of insulating film on the PET film with release agent Use the composition (Fig. 1 (B)). A glass slide was placed on a spacer, and the composition for an insulating film was scraped off and applied (Figs. 1 (C) to (E)). Here, the coated insulating film composition is sufficiently dried, and the obtained insulating film is peeled off from the PET film, and then a vacuum press machine is used under the conditions of 200 ° C. for 60 minutes and 0.1 MPa. Its hardened. The cured insulating film was cut into 10 × 10 mm to prepare a test piece for measuring thermal conductivity. The thermal conductivity of the produced test piece for measuring thermal conductivity was measured with a thermal conductivity meter (model: LFF447Nanoflash) made by NETSCH. Tables 1 and 2 show the measurement results of the thermal conductivity.
將得到之絕緣薄膜用組成物於施有脫模劑之50μm厚之PET薄膜上,以成為寬度20cm、乾燥後之膜厚度為50至100μm之方式,使用塗佈機進行塗佈。將塗佈之絕緣薄膜用組成物以80℃乾燥20分鐘,得到絕緣薄膜。將得到之絕緣薄膜卷繞於50mm φ、寬度40cm幅之捲盤,以目視評價薄膜特性。有充分之柔軟性而不產生破裂時記為「○」,有發生破裂時記為「×」。表1及表2為薄膜特性之結果。 The obtained composition for an insulating film was applied to a 50 μm-thick PET film to which a release agent was applied, so that the film thickness was 20 cm in width and the thickness of the film after drying was 50 to 100 μm, using a coater for coating. The applied composition for an insulating film was dried at 80 ° C. for 20 minutes to obtain an insulating film. The obtained insulating film was wound on a reel having a width of 50 mm φ and a width of 40 cm, and the film characteristics were evaluated visually. When there is sufficient flexibility without cracking, it is recorded as "○", when there is cracking, it is recorded as "X". Tables 1 and 2 show the results of the film characteristics.
將得到之絕緣薄膜用組成物於施有脫模劑之50μm厚之PET薄膜上,以成為寬度20cm、乾燥後之膜厚度為50至100μm之方式,使用塗佈機塗佈。將塗佈之絕緣薄膜用組成物以80℃乾燥20分鐘,得到附有PET薄膜之絕緣 薄膜。將得到之附有PET薄膜之絕緣薄膜從PET薄膜撕下,以2片50mm×100mm×30μm之銅箔夾住,使用真空擠壓機以200℃×60分鐘、0.1MPa之條件使其硬化。將硬化之樣本切出成30×30mm,於290℃之焊料浴中浸漬2分鐘,以目視進行評價。於此,焊料浴之焊料係使用Nihon Superior製無鉛焊料(品名:SN96Cl(010),錫:銀:銅:焊劑(flux)=91.7:4:1.3:3(質量%)。硬化之樣本沒有剝離或鼓脹時記為「○」,硬化之樣本有剝離及/或鼓脹時記為「×」。表1及表2為焊料耐熱性之結果。 The obtained composition for an insulating film was applied on a 50 μm-thick PET film to which a release agent was applied, so that the film thickness was 20 cm in width and the film thickness after drying was 50 to 100 μm, using a coater. The coated insulation film composition was dried at 80 ° C for 20 minutes to obtain an insulation with a PET film. film. The obtained insulating film with a PET film was peeled from the PET film, sandwiched between two pieces of copper foil of 50 mm × 100 mm × 30 μm, and hardened using a vacuum extruder at 200 ° C. for 60 minutes and 0.1 MPa. The hardened sample was cut into 30 × 30 mm, and immersed in a solder bath at 290 ° C. for 2 minutes, and evaluated visually. Here, the solder of the solder bath is a lead-free solder (product name: SN96Cl (010), tin: silver: copper: flux) made by Nihon Superior = 91.7: 4: 1.3: 3 (mass%). The hardened sample is not peeled "○" when bulging or "x" when the hardened sample peeled and / or bulging. Tables 1 and 2 show the results of solder heat resistance.
1)DIC製甲酚酚醛清漆型環氧樹脂(品名:N-665-EXP) 1) Cresol novolac epoxy resin (product name: N-665-EXP) made by DIC
2)宇部興產製丁二烯丙烯腈橡膠(品名:HYCAR CTBN1300) 2) Butadiene acrylonitrile rubber produced by Ube (Product name: HYCAR CTBN1300)
3)三菱化學製雙酚A型環氧樹脂(品名:JER828) 3) Mitsubishi Chemical's bisphenol A epoxy resin (product name: JER828)
4)三井化學製芳烷基酚樹脂(品名:XLC4L) 4) Aralkylphenol resin made by Mitsui Chemicals (product name: XLC4L)
5)fudow製酚改質二甲苯樹脂(品名:PR-1440M) 5) Phenol modified xylene resin made by fudow (product name: PR-1440M)
6)新日本理化製酸酐系硬化劑(品名:Rikajitto MH-700) 6) New Japan Physical and Chemical Anhydride Hardener (Product Name: Rikajitto MH-700)
7)四國化成製2-乙基-4-甲基咪唑(品名:2E4MZ) 7) 2-Ethyl-4-methylimidazole produced by Shikoku Kasei (Product name: 2E4MZ)
8)四國化成製2,4-二胺-6-[2’-甲基咪唑-(1’)]-乙基-s-三(品名:2MZ-A) 8) 2,4-diamine-6- [2'-methylimidazole- (1 ')]-ethyl-s-tri (Product Name: 2MZ-A)
9)電氣化學工業製球狀alumina粉末(品名:ASFP-20,平均粒徑:0.3μm) 9) Spherical alumina powder (Product name: ASFP-20, average particle size: 0.3 μm) made by the Denki Chemical Industry
10)電氣化學工業製alumina粉末(品名:DAM-03,平均粒徑:3.7μm) 10) alumina powder manufactured by Denki Chemical Industry (product name: DAM-03, average particle size: 3.7 μm)
11)電氣化學工業製alumina粉末(品名:DAM-05,平均粒徑:5μm) 11) alumina powder manufactured by Denki Chemical Industry (product name: DAM-05, average particle size: 5 μm)
12)電氣化學工業製alumina粉末(品名:DAM-07,平均粒徑:8μm) 12) alumina powder manufactured by Denki Chemical Industry (product name: DAM-07, average particle size: 8 μm)
13)昭和電工製球狀alumina粉末(品名:CB-A20S,平均粒徑:21μm) 13) Showa Denko spherical alumina powder (product name: CB-A20S, average particle size: 21 μm)
14)Sakai化學工業製球狀氧化鎂粉末(品名:SMO-05,平均粒徑:8μm) 14) Spherical magnesium oxide powder made by Sakai Chemical Industry (product name: SMO-05, average particle size: 8 μm)
15)信越化學工業製3-環氧丙氧基丙基三甲氧基矽烷(glycidoxypropyl trimethoxysilane)(品名:KBM-403) 15) 3-glycidoxypropyl trimethoxysilane manufactured by Shin-Etsu Chemical Industry (product name: KBM-403)
16)Kusumoto Chemicals,Ltd.製分散劑(品名:ED152) 16) Dispersant manufactured by Kusumoto Chemicals, Ltd. (product name: ED152)
17)Exxon Mobil Corporation製甲基乙基酮(品名:MEK) 17) Methyl ethyl ketone (product name: MEK) manufactured by Exxon Mobil Corporation
從表1、2可知,所有實施例1至9中,熱傳導率、薄膜特性、焊料耐熱性之全部的結果皆為良好。相較於此,(E)成份過多之比較例1係薄膜特性差。(E)成份過少之比較例2係熱傳導率低。(B)成份過多之比較例3亦熱傳導率低。(B)成份過少之比較例4係薄膜特性差。使用酚改質二甲苯取代(C)成份之比較例5的薄膜特性亦差。使用酸酐系取代(C)成份之比較例6的薄膜特性亦差。使用雙酚A型環氧樹脂取代(A)成份、(C)成份之比較例7係焊料耐熱性差。 As can be seen from Tables 1 and 2, in all Examples 1 to 9, all the results of thermal conductivity, film characteristics, and solder heat resistance were good. In comparison, Comparative Example 1 which has too much (E) component has poor film characteristics. (E) Comparative Example 2 with too little component has low thermal conductivity. (B) Comparative Example 3 with too many components also had low thermal conductivity. (B) Comparative Example 4 is a film whose composition is too small and has poor characteristics. Comparative Example 5 using phenol-modified xylene in place of the component (C) also had poor film properties. The film properties of Comparative Example 6 using the acid anhydride-based substitution (C) component were also poor. Comparative Example 7 which uses a bisphenol A type epoxy resin in place of the components (A) and (C) has poor heat resistance.
如上所述,本發明之絕緣薄膜係薄膜特性優異且硬化後耐熱性優異,並具有3.0W/mK以上之熱傳導率,而其硬化物係可提供可靠度高之半導體裝置。 As described above, the insulating thin film of the present invention has excellent characteristics and excellent heat resistance after hardening, and has a thermal conductivity of 3.0 W / mK or more, and its hardened material can provide a highly reliable semiconductor device.
Claims (6)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014059340A JP6423603B2 (en) | 2014-03-21 | 2014-03-21 | Insulating film and semiconductor device |
| JP2014-059340 | 2014-03-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201546132A TW201546132A (en) | 2015-12-16 |
| TWI663195B true TWI663195B (en) | 2019-06-21 |
Family
ID=54144710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104108757A TWI663195B (en) | 2014-03-21 | 2015-03-19 | Insulating film and semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6423603B2 (en) |
| TW (1) | TWI663195B (en) |
| WO (1) | WO2015141746A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7211693B2 (en) * | 2016-10-03 | 2023-01-24 | 味の素株式会社 | resin composition |
| JP7067594B2 (en) * | 2020-10-06 | 2022-05-16 | 味の素株式会社 | Resin composition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200424279A (en) * | 2002-12-02 | 2004-11-16 | Nitto Denko Corp | Adhesives composition, adhesive film, and semiconductor apparatus using the same |
| JP2004352871A (en) * | 2003-05-29 | 2004-12-16 | Nitto Denko Corp | Adhesive composition, adhesive film and semiconductor device using the same |
| TW201333178A (en) * | 2011-10-06 | 2013-08-16 | Denki Kagaku Kogyo Kk | Thermally conductive composition for low outgassing |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006199894A (en) * | 2005-01-24 | 2006-08-03 | Sekisui Chem Co Ltd | Adhesive sheet and semiconductor device |
| JP2007001291A (en) * | 2005-05-27 | 2007-01-11 | Hitachi Chem Co Ltd | Metallic foil with adhesion adjuvant, printed-wiring board using the same, and manufacturing method for printed-wiring board |
| JP5717353B2 (en) * | 2010-04-02 | 2015-05-13 | ソマール株式会社 | Thermally conductive adhesive sheet |
| JP5691244B2 (en) * | 2010-05-26 | 2015-04-01 | 日立化成株式会社 | Film adhesive, adhesive sheet and semiconductor device |
| JP5686543B2 (en) * | 2010-07-16 | 2015-03-18 | ソマール株式会社 | Adhesive and adhesive sheet using the same |
| JP5871477B2 (en) * | 2011-03-16 | 2016-03-01 | ソマール株式会社 | Adhesive sheet |
| JP4987161B1 (en) * | 2011-11-24 | 2012-07-25 | 積水化学工業株式会社 | Insulation material |
-
2014
- 2014-03-21 JP JP2014059340A patent/JP6423603B2/en active Active
-
2015
- 2015-03-18 WO PCT/JP2015/058122 patent/WO2015141746A1/en not_active Ceased
- 2015-03-19 TW TW104108757A patent/TWI663195B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200424279A (en) * | 2002-12-02 | 2004-11-16 | Nitto Denko Corp | Adhesives composition, adhesive film, and semiconductor apparatus using the same |
| JP2004352871A (en) * | 2003-05-29 | 2004-12-16 | Nitto Denko Corp | Adhesive composition, adhesive film and semiconductor device using the same |
| TW201333178A (en) * | 2011-10-06 | 2013-08-16 | Denki Kagaku Kogyo Kk | Thermally conductive composition for low outgassing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015183050A (en) | 2015-10-22 |
| WO2015141746A1 (en) | 2015-09-24 |
| JP6423603B2 (en) | 2018-11-14 |
| TW201546132A (en) | 2015-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201335260A (en) | Resin cured product, semi-cured resin film and resin composition | |
| CN110945634A (en) | Heat dissipating die bond film and dicing die bond film | |
| JP7392706B2 (en) | adhesive film | |
| TWI694126B (en) | Resin composition, adhesive film and semiconductor device | |
| TWI599634B (en) | Semiconductor device | |
| KR101703558B1 (en) | Alumina and graphite composite including a thermally conductive resin composition and dissipative products | |
| CN105637623A (en) | Adhesive film for semiconductor bonding | |
| JP5910731B2 (en) | Method for manufacturing heat conductive sheet, heat conductive sheet, heat conductive sheet with metal foil, and semiconductor device | |
| JP2007001266A (en) | Epoxy resin inorganic composite sheet and molded product | |
| TWI628229B (en) | Film forming resin composition, insulating film and semiconductor device | |
| TWI663195B (en) | Insulating film and semiconductor device | |
| JP6912030B2 (en) | Resin compositions, adhesive films, and semiconductor devices | |
| JP2009235402A (en) | Adhesive film | |
| JP2003193016A (en) | Highly thermo resistant adhesive film with high heat dissipation | |
| JP7137895B2 (en) | Conductive Adhesive Sheet, Method for Manufacturing Conductive Adhesive Sheet, and Semiconductor Device | |
| TW202206564A (en) | Thermally conductive adhesive sheet and semiconductor device | |
| JP2004256631A (en) | Adhesive composition and adhesive film |