TWI663038B - Method of imprint lithography of conductive materials; stamp for imprint lithography, and apparatus for imprint lithograph - Google Patents
Method of imprint lithography of conductive materials; stamp for imprint lithography, and apparatus for imprint lithograph Download PDFInfo
- Publication number
- TWI663038B TWI663038B TW106126054A TW106126054A TWI663038B TW I663038 B TWI663038 B TW I663038B TW 106126054 A TW106126054 A TW 106126054A TW 106126054 A TW106126054 A TW 106126054A TW I663038 B TWI663038 B TW I663038B
- Authority
- TW
- Taiwan
- Prior art keywords
- stamp
- conductive paste
- layer
- patterned layer
- lithography
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H10P76/2041—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
-
- H10P76/00—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
提出使用壓印微影的圖案化方法、用於壓印微影的印模(stamp)、卷對卷(roll-to-roll)基板處理設備的壓印滾軸、及基板處理設備。此方法包括提供一導電漿料之一層於一基板上,其中導電漿料的黏度為0.3Pa.s或以上,特別地為1.5pa.s或更高;壓印一印模在此導電漿料之此層中,以產生導電漿料的一圖案化層;完全地或部分地固化圖案化層;及從圖案化層釋放(release)印模。 A patterning method using embossing lithography, a stamp for embossing lithography, an imprinting roller of a roll-to-roll substrate processing apparatus, and a substrate processing apparatus are proposed. The method includes providing a layer of a conductive paste on a substrate, wherein the viscosity of the conductive paste is 0.3 Pa.s or more, particularly 1.5 pa.s or more; and an impression is stamped on the conductive paste Among these layers, a patterned layer is generated to produce a conductive paste; the patterned layer is completely or partially cured; and a stamp is released from the patterned layer.
Description
本發明是有關於一種壓印微影,且特別是有關於導電材料的壓印微影。本揭露實施例特別地有關於導電漿料的壓印微影、用於壓印微影的印模、及使用此方法的設備與使用此印模的設備。 The invention relates to an embossed lithography, and more particularly to an embossed lithography of a conductive material. The embodiments of the present disclosure are particularly related to embossing lithography of conductive paste, a stamp for embossing lithography, and equipment using the method and equipment using the stamp.
薄膜的圖案化是被期望以用於多種應用,例如微電子裝置的製造、光電子裝置的製造、或光學裝置的製造。光學微影技術可用於對裝置中的薄膜進行圖案化。然而,光微影技術可能是昂貴的、及/或可能達到它們的極限,特別是針對較大尺寸的基板。 Patterning of thin films is expected for a variety of applications, such as manufacturing of microelectronic devices, manufacturing of optoelectronic devices, or manufacturing of optical devices. Optical lithography can be used to pattern thin films in devices. However, photolithography techniques may be expensive and / or may reach their limits, especially for larger substrate sizes.
特別是對於卷對卷(roll-to-roll)處理而言,使用傳統技術而不使用昂貴的光微影來製造小特徵尺寸是有限制的。印刷技術例如是網版(screen)印刷、凹版(gravure)、柔版(flexographic)、噴墨等,例如受限於特徵尺寸,例如>10μm,這尺寸可能不夠小。 Especially for roll-to-roll processing, there are limitations to using conventional techniques to make small feature sizes without using expensive light lithography. Printing technology is, for example, screen printing, gravure, flexographic, inkjet, etc., for example, it is limited by the feature size, such as> 10 μm, which may not be small enough.
此外,片對片(sheet-to-sheet)處理可以受益於壓印微影處理。壓印微影可以提供圖案化薄膜相當廉價的處理,以便在裝置中提供圖案化結構。 In addition, sheet-to-sheet processing can benefit from imprint lithography processing. Embossed lithography can provide a relatively inexpensive treatment of a patterned film to provide a patterned structure in a device.
導電特徵,亦即由導電材料製造的特徵,可以用於電子裝置、微電子裝置、光電子裝置、和光學裝置。 Conductive features, that is, features made of conductive materials, can be used in electronic devices, microelectronic devices, optoelectronic devices, and optical devices.
改良導電特徵的製造會是有益的。 It would be beneficial to improve the fabrication of conductive features.
鑑於上述,提出使用壓印微影進行圖案化的方法、用於壓印微影的印模、卷對卷基板處理設備的壓印滾軸、及基板處理設備。本揭露的其他方面、優點和特徵係明示(apparent)於附屬申請專利範圍、說明書及所附圖示中。 In view of the foregoing, a method for patterning using embossed lithography, a stamp for embossed lithography, an embossing roller of a roll-to-roll substrate processing apparatus, and a substrate processing apparatus are proposed. Other aspects, advantages, and features of this disclosure are apparent in the scope of the attached patent application, the specification, and the accompanying drawings.
根據一實施例,提出一種使用壓印微影的圖案化方法。此方法包括:提供一導電漿料(paste)之一層於一基板上,其中導電漿料的黏度為0.3Pa.s或以上,特別地為1.5pa.s或更高;壓印一印模(stamp)在該導電漿料之該層中,以產生導電漿料的一圖案化層;完全地或部分地固化圖案化層;以及從圖案化層釋放(release)印模。 According to an embodiment, a patterning method using embossed lithography is proposed. The method includes: providing a layer of conductive paste on a substrate, wherein the viscosity of the conductive paste is 0.3 Pa.s or more, particularly 1.5 pa.s or more; and embossing a stamp ( stamp) in the layer of the conductive paste to produce a patterned layer of the conductive paste; completely or partially cure the patterned layer; and release a stamp from the patterned layer.
依據另一實施例,提出一種用於壓印微影的印模。此印模包括:一基底主體;及多個特徵,用於在壓印印模於一層中時產生一圖案,其中多個特徵係由該基底主體所支撐,其中至少10%的該些特徵具有一特徵寬度W及一特徵深度D,並提供一比值D/W為1.5或更大,特別地為5或更大,以在壓印微影期間產生多個中空空間。 According to another embodiment, a stamp for lithography is proposed. The stamp includes: a base body; and a plurality of features for generating a pattern when the stamp is imprinted in a layer, wherein a plurality of features are supported by the base body, and at least 10% of the features have A feature width W and a feature depth D, and provide a ratio D / W of 1.5 or more, particularly 5 or more, to generate a plurality of hollow spaces during lithography.
依據另一實施例,提出一種卷對卷基板處理設備之壓印滾軸。此壓印滾軸包括一印模。此印模包括:一基底主體;及多個特徵,用於在壓印該印模於一層中時產生一圖案,其中該些個特徵係由基底主體所支撐,其中至少10%的該些特徵具有一特徵寬度W及一特徵深度D,並提供一比值D/W為1.5或更大,特別地為5或更大,以在壓印微影期間產生多個中空空間,其中該些個特徵係提供在滾軸的一表面。 According to another embodiment, an embossing roller of a roll-to-roll substrate processing apparatus is proposed. The embossing roller includes an impression. The stamp includes: a base body; and a plurality of features for generating a pattern when the stamp is imprinted in a layer, wherein the features are supported by the base body, and at least 10% of the features are Has a feature width W and a feature depth D, and provides a ratio D / W of 1.5 or more, particularly 5 or more, to generate a plurality of hollow spaces during lithography, among which the features It is provided on one surface of the roller.
依據另一實施例,提出一種基板處理設備。此設備包括印模。印模包含:一基底主體;及多個特徵,用於在壓印該印模於一層中時產生一圖案,其中該些特徵係由基底主體所支撐,其中至少10%的該些特徵具有一特徵寬度W及一特徵深度D,並提供一比值D/W為1.5或更大,特別地為5或更大,以在壓印微影期間產生多個中空空間。 According to another embodiment, a substrate processing apparatus is proposed. This equipment includes impressions. The stamp includes: a base body; and a plurality of features for generating a pattern when the stamp is imprinted in a layer, wherein the features are supported by the base body, and at least 10% of the features have a The feature width W and a feature depth D are provided, and a ratio D / W is 1.5 or more, particularly 5 or more, so as to generate a plurality of hollow spaces during the lithography.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下: In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:
100‧‧‧基板 100‧‧‧ substrate
101、402、503、512‧‧‧箭頭 101, 402, 503, 512‧‧‧ arrows
102‧‧‧導電漿料之層 102‧‧‧Layer of conductive paste
104‧‧‧圖案化之層 104‧‧‧Patterned layer
110‧‧‧印模 110‧‧‧ impression
112‧‧‧基底主體 112‧‧‧ base body
114‧‧‧特徵 114‧‧‧ Features
121‧‧‧底表面 121‧‧‧ bottom surface
122‧‧‧頂表面 122‧‧‧Top surface
123‧‧‧側表面 123‧‧‧side surface
214‧‧‧中空空間 214‧‧‧Hollow Space
221‧‧‧表面 221‧‧‧ surface
314‧‧‧開口 314‧‧‧ opening
502、510‧‧‧滾軸 502, 510‧‧‧ roller
504、514‧‧‧軸 504, 514‧‧‧ axis
532‧‧‧固化單元 532‧‧‧curing unit
533‧‧‧發射 533‧‧‧launch
534‧‧‧第二固化單元 534‧‧‧Second curing unit
535‧‧‧第二發射 535‧‧‧second launch
544‧‧‧沉積單元 544‧‧‧sedimentation unit
602、604、606‧‧‧方框 Boxes 602, 604, 606‧‧‧‧
D‧‧‧深度 D‧‧‧ Depth
F‧‧‧力 F‧‧‧force
W‧‧‧寬度 W‧‧‧Width
本揭露實施例係簡要概述於上並進一步詳述如下,可透過參考所附圖示的本揭露範例性實施例而理解。然而,應瞭解,所附圖示僅繪示本揭露的典型實施例,因此不應將其視為限制其範圍,因本揭露可允許應用於其他同等有效的實施例。 The embodiments of the present disclosure are briefly summarized above and further detailed below, which can be understood by referring to the exemplary embodiments of the present disclosure with reference to the accompanying drawings. It should be understood, however, that the accompanying drawings depict only typical embodiments of the disclosure, and therefore should not be considered as limiting its scope, as the disclosure may be applied to other equally effective embodiments.
第1A及1B圖繪示依照本揭露實施例之基板上之薄膜壓印微影之製程及依照本揭露之用於壓印微影的印模的示意圖。 FIGS. 1A and 1B are schematic diagrams illustrating a process of embossing a thin film on a substrate according to an embodiment of the present disclosure and a schematic diagram of a mold for embossing a lithography according to the present disclosure.
第2圖繪示依照本揭露之用於壓印微影的印模的示意圖。 FIG. 2 is a schematic diagram of a stamp for lithographic lithography according to the present disclosure.
第3圖繪示依照本揭露之用於壓印微影的另一印模的示意圖。 FIG. 3 is a schematic diagram of another impression for lithography according to the present disclosure.
第4A及4B圖繪示依照本揭露實施例之壓印微影薄膜於基板上之製程的示意圖。 4A and 4B are schematic diagrams illustrating a process of embossing a lithographic film on a substrate according to an embodiment of the present disclosure.
第5圖繪示使用此處所述實施例之提供圖案於金屬漿料層之中的設備的示意圖。 FIG. 5 is a schematic diagram of an apparatus for providing a pattern in a metal paste layer using the embodiment described herein.
第6圖繪示壓印微影之方法的流程圖。 FIG. 6 shows a flowchart of a method for embossing lithography.
為了幫助理解,在可能的情況下,相同的附圖標記係用來表示在圖示中共通的相同元件。請知悉在一個實施例的元件和特徵可以有利地併入其它實施例中,而無需進一步重覆的敘述。 To facilitate understanding, wherever possible, the same reference numbers will be used to refer to the same elements that are common to the figures. Please note that elements and features of one embodiment may be beneficially incorporated in other embodiments without further detailed description.
本揭露實施例提出一種使用壓印微影的圖案化方法。此方法包括:提供一層導電漿料(paste)在一基板上,其中導電漿料的黏度為1.5pa.s或更高;壓印一印模(stamp)在此層導電漿料中,以產生導電漿料的一圖案化層;完全地或部分地固化圖案化層;以及從圖案化層釋放(release)印模。本揭露實施例更提出及/或使用用於壓印微影的印模。此印模包括一基底主體;及多個特徵,此些特徵用於在壓印印模於一層中時產生一圖案,其中此些特徵係由基底主體所支撐支撐,其中至少10%的此些特徵具有一特徵寬度W及一特徵深度D,並提供一比值D/W為1.5或更大,特別地為5或更大,以在壓印微影期間產生多個中空空間。 The embodiment of the present disclosure provides a patterning method using embossed lithography. The method includes: providing a layer of conductive paste on a substrate, wherein the viscosity of the conductive paste is 1.5pa.s or higher; and stamping a stamp in the layer of conductive paste to produce A patterned layer of the conductive paste; fully or partially curing the patterned layer; and releasing the stamp from the patterned layer. The present disclosure further proposes and / or uses a stamp for lithography. The stamp includes a base body; and a plurality of features for generating a pattern when the stamp is imprinted in a layer, wherein the features are supported and supported by the base body, at least 10% of which The feature has a feature width W and a feature depth D, and provides a ratio D / W of 1.5 or more, particularly 5 or more, to generate a plurality of hollow spaces during lithography.
卷對卷(roll-to-roll,R2R)壓印微影可達到的特徵尺寸之解析度約為1μm或更小,例如甚至達到次微(sub-micro)的解析度。因此,依照本揭露使用壓印微影技術的實施例可以允許在可彎曲基板上製造小型特徵。 The roll-to-roll (R2R) embossed lithography can reach a resolution of about 1 μm or less, for example, even a sub-micro resolution. Therefore, embodiments using embossing lithography in accordance with the present disclosure may allow small features to be fabricated on a flexible substrate.
使用地理(geography)壓印有兩種模式。膜可被沉積和壓印。壓印材料可以作為蝕刻遮罩,用於後續的蝕刻。替代性地,膜可被沉積並壓印。壓印材料,例如光阻(resist)材料,可以是產品的永久部分,並形成沉積的膜。藉由使用印模壓印材料層,可用於本揭露實施例之壓印微影將膜圖案化為期望的或預定的形狀。 There are two modes for imprinting using geography. The film can be deposited and embossed. The embossed material can be used as an etching mask for subsequent etching. Alternatively, the film may be deposited and embossed. Imprint materials, such as resist materials, can be a permanent part of the product and form a deposited film. By using a stamp embossing material layer, the lithography lithography that can be used in the disclosed embodiments pattern the film into a desired or predetermined shape.
根據本揭露所述實施例,壓印微影可以特別有利於R2R製程。R2R製程在沉積膜時可以實現高生產率,並製造圖案化膜。例如,可以在R2R製程中沉積並圖案化膜,例如薄膜,亦即厚度為幾奈米至數十微米的材料層。薄膜可提供在塑膠基板上,例如PET、PEN、COP、PI、TAC(三醋酸纖維素(Triacetyl cellulose))、及其他類似基板。 According to the embodiments described in this disclosure, embossed lithography can be particularly beneficial for R2R processes. The R2R process can achieve high productivity during film deposition and manufacture patterned films. For example, a film, such as a thin film, can be deposited and patterned in an R2R process, that is, a material layer having a thickness of several nanometers to tens of microns. Films can be provided on plastic substrates such as PET, PEN, COP, PI, TAC (Triacetyl cellulose), and other similar substrates.
根據本揭露另外的實施例,薄膜的沉積和圖案化也可以應用於金屬或薄玻璃基板,例如康寧(Corning)的可撓式玻璃(Willow Glass)。例如,薄膜可以以片對片(sheet-to-sheet)的處理而被製造。這可應用於玻璃基板或貼附在玻璃載體上的塑膠基板。另外的實施例可以涉及金屬基板、有機基板、例如用於印刷電路板(printed circuit board,PCB)製造之玻璃複合基板、例如用於積體電路(integrated circuit,IC)封裝之ABF(味之素(Ajinomoto)組合膜)、及其他剛性基板。 According to another embodiment of the present disclosure, the deposition and patterning of thin films can also be applied to metal or thin glass substrates, such as Corning's Willow Glass. For example, a thin film can be manufactured in a sheet-to-sheet process. This can be applied to a glass substrate or a plastic substrate attached to a glass carrier. Other embodiments may involve metal substrates, organic substrates, such as glass composite substrates for printed circuit board (PCB) manufacturing, such as for integrated circuits circuit (IC) packaged ABF (Ajinomoto combined film), and other rigid substrates.
第1A及1B圖繪示具壓印微影之圖案化方法及用於壓印微影之印模110。導電漿料之一層102係提供在基板100上。依據本揭露實施例,導電漿料具有的黏度為1.5pa.s或更高。依據可與其他此處所述實施例結合之本揭露的一些實施例,導電漿料可為銅漿料(couple paste)或銀漿料。 Figures 1A and 1B illustrate a patterning method with embossed lithography and a stamp 110 for embossed lithography. A layer 102 of conductive paste is provided on the substrate 100. According to the disclosed embodiment, the conductive paste has a viscosity of 1.5 pa.s or higher. According to some embodiments of the disclosure that can be combined with other embodiments described herein, the conductive paste may be a copper paste or a silver paste.
印模110係壓印在導電漿料的此層102中,以在圖案化層104中產生圖案,如圖1B所示。印模110包括基底主體112及多個特徵114。印模的特徵可以例如由印模110中的凹部(recess)所形成,其中印模中的凹部導致圖案化層104中的凸部(protrusion)。對應於印模特徵的圖案化層中的凸部可以稱為圖案化特徵。 The stamper 110 is embossed in this layer 102 of the conductive paste to generate a pattern in the patterned layer 104, as shown in FIG. 1B. The stamp 110 includes a base body 112 and a plurality of features 114. The features of the stamp can be formed, for example, by recesses in the stamp 110, wherein the recesses in the stamp result in protrusions in the patterned layer 104. The convex portion in the patterned layer corresponding to the stamp feature may be referred to as a patterned feature.
印模110的各個特徵114具有特徵寬度W和特徵深度D。印模的特徵由底表面121、側表面123、和一個或多個相鄰頂表面122所形成。範例性地,第1A圖繪示印模110的橫切面,其中特徵寬度W係被繪出。依據本揭露的實施例,特徵還有具W'的第二特徵在不平行於第1A圖的紙平面的方向上,例如在垂直於第1A圖所示的特徵寬度W的方向上。 Each feature 114 of the stamp 110 has a feature width W and a feature depth D. The features of the stamp are formed by a bottom surface 121, a side surface 123, and one or more adjacent top surfaces 122. Exemplarily, FIG. 1A illustrates a cross-section of the stamp 110, in which the characteristic width W is drawn. According to the embodiment of the present disclosure, the feature has a second feature W ′ in a direction that is not parallel to the paper plane in FIG. 1A, for example, in a direction perpendicular to the feature width W shown in FIG. 1A.
依據本揭露實施例,多個特徵可被提供,其中多個特徵包括:側表面、底表面、和頂表面。例如,各個特徵可以包括一個或多個側表面、一底表面、且可以被頂表面圍繞。多位準印模可以進一步包括多於一個的底表面。依據可與此處所述的其他實施例結合的一 些實施例,側表面、底表面、和頂表面中的至少一個係塗佈有塗層(coating)。 According to the disclosed embodiments, a plurality of features may be provided, wherein the plurality of features include: a side surface, a bottom surface, and a top surface. For example, each feature may include one or more side surfaces, a bottom surface, and may be surrounded by a top surface. The multi-level dies may further include more than one bottom surface. According to one that can be combined with other embodiments described herein In some embodiments, at least one of the side surface, the bottom surface, and the top surface is coated with a coating.
依據一些實施例,印模110的多個特徵114可以具有相同的特徵寬度和相同的特徵深度。附加地或替代地,印模的不同特徵可以具有不同的特徵幾何形狀,亦即不同的特徵寬度和不同的特徵深度。另外,可以重複的方式將兩個或更多個具有不同尺寸的特徵彼此相鄰放置以形成重複的圖案。 According to some embodiments, the plurality of features 114 of the stamp 110 may have the same feature width and the same feature depth. Additionally or alternatively, different features of the stamp may have different feature geometries, that is, different feature widths and different feature depths. In addition, two or more features having different sizes may be placed next to each other in a repeating manner to form a repeating pattern.
依據本揭露一些實施例,圖案化特徵可選自由以下所組成的群組:線(line)、柱(pole)、溝槽(trench)、孔(hole)、圓形、正方形、矩形、三角形、其他多邊形、角錐形、平頂(plateaus)、及其組合或陣列。一般來說,圖案化特徵可包括用於電路製造的多個形狀。印模的特徵可以具有對應的幾何形狀,其中凸部對應於凹部,反之亦然。圖案化特徵可以包括用於製造電路中導電線的遮罩(mask)。 According to some embodiments of the present disclosure, the patterning feature may be selected from the group consisting of: line, pole, trench, hole, circle, square, rectangle, triangle, Other polygons, pyramids, plateaus, and combinations or arrays thereof. Generally speaking, patterned features may include multiple shapes for circuit manufacturing. The features of the stamp may have corresponding geometries, where convex portions correspond to concave portions and vice versa. The patterned features may include a mask for manufacturing conductive lines in a circuit.
依據本揭露一些實施例,壓印微影圖案化方法可用於製造線柵偏光器(wire grid polarizer),其中例如線被提供為圖案化特徵。例如,線可以具有100nm或更低的半頁(half page),例如50nm至100nm。 According to some embodiments of the present disclosure, the embossed lithography patterning method may be used to fabricate a wire grid polarizer, where, for example, lines are provided as patterned features. For example, the line may have a half page of 100 nm or less, such as 50 nm to 100 nm.
如第1B圖所示,印模110和基板100係相對於彼此而被移除(remove),以使得導電漿料的此層102被壓印以形成圖案化層104。例如,印模110可以往下移動(lower)至基板上,亦即相對於基板移動。替代性地,基板100可相對於印模110移動。依據另外的替代作 法,基板100和印模110可被移動以將印模110壓印在導電材料的此層102中。 As shown in FIG. 1B, the stamper 110 and the substrate 100 are removed relative to each other, so that this layer 102 of the conductive paste is embossed to form a patterned layer 104. For example, the stamp 110 may be lowered onto the substrate, that is, relative to the substrate. Alternatively, the substrate 100 may be moved relative to the stamp 110. Based on alternatives Method, the substrate 100 and the stamp 110 can be moved to stamp the stamp 110 into this layer 102 of conductive material.
依據本揭露一些實施例,如關於第5圖範例性的描述,印模110可以是壓印滾軸的一部分,或者可以將印模安裝在滾軸上,其中壓印可以在R2R製程中進行。對於R2R製程中的壓印微影,滾軸可以圍繞旋轉軸線而旋轉,而基板係在轉子的表面例如圓柱形表面上移動。例如,基板輸送速度v可對應至依據公式v=r.w的滾軸角速度w,其中r是滾軸的外徑。也就是說,基板輸送速度係相似於滾軸的橫向徑向(cross-radial)速度,亦即滾軸的切向(tangential)速度。 According to some embodiments of the present disclosure, as exemplarily described with reference to FIG. 5, the stamper 110 may be a part of the stamping roller, or the stamper may be mounted on the roller, wherein the stamping may be performed in an R2R process. For the lithographic lithography in the R2R process, the roller can rotate around the rotation axis, and the substrate is moved on the surface of the rotor, such as a cylindrical surface. For example, the substrate conveying speed v may correspond to the formula v = r. The roller angular velocity w of w, where r is the outer diameter of the roller. That is, the substrate conveying speed is similar to the cross-radial speed of the roller, that is, the tangential speed of the roller.
依據本揭露一些實施例,壓印微影處理也可以是自對準壓印微影(self-aligned imprint lithography,SAIL)處理。對於SAIL處理,即多位準壓印微影製程(multi-level imprint lithography process),印模中的凹部可具有特微之不同部分的兩個或更多個特徵深度。這可以非常有效地在薄膜中生成圖案。因此,SAIL處理包括多位準印模。線路的製造,例如以壓印微影處理(例如SAIL處理)的連接線,允許線之間具有窄寬度和短距離的線。 According to some embodiments of the present disclosure, the imprint lithography process may also be a self-aligned imprint lithography (SAIL) process. For SAIL processing, that is, a multi-level imprint lithography process, the recesses in the stamp may have two or more characteristic depths of different parts of the micro. This can be very effective in generating patterns in thin films. Therefore, the SAIL process includes multiple quasi impressions. The manufacture of wiring, such as embossed lithographic processing (such as SAIL processing), allows for narrow width and short distance lines between lines.
依據本揭露實施例,並且如關於第1A及1B圖範例性所示,導電漿料係提供在基板100上以形成一層102。導電漿料以印模110壓印,形成所需結構。導電材料被固化,例如通過光,例如紫外線(UV)光,或通過加熱。在壓印印模從基板分離或釋放之前,可以完全地或部分地提供固化。例如,固化可能不完全,但提供足夠的結構穩定性,使得壓印印模可以釋放漿料而不損壞壓印結構。 According to the embodiment of the present disclosure, and as exemplarily shown in FIGS. 1A and 1B, a conductive paste is provided on the substrate 100 to form a layer 102. The conductive paste is embossed with a stamper 110 to form a desired structure. The conductive material is cured, for example, by light, such as ultraviolet (UV) light, or by heating. The curing may be provided in whole or in part before the imprint stamp is separated or released from the substrate. For example, curing may be incomplete, but provide sufficient structural stability so that the imprint stamp can release the paste without damaging the imprint structure.
導電材料可接受後續的固化而完全固化導電材料。在一些事件中,殘留材料會留在基板上,並位在對應於印模的一個或多個頂表面122的印模110的一部分,蝕刻處理可被提供以去除殘留材料。例如,光蝕刻可被提供,以去除圖案化結構之間的程序導電漿料材料。此蝕刻可以是濕蝕刻或乾燥蝕刻。 The conductive material may undergo subsequent curing to completely cure the conductive material. In some events, residual material may remain on the substrate and be located on a portion of the stamp 110 corresponding to one or more top surfaces 122 of the stamp, and an etching process may be provided to remove the residual material. For example, photo-etching may be provided to remove procedural conductive paste material between patterned structures. This etch may be a wet etch or a dry etch.
此處所述的實施例參照至由印模直接壓印在基板上的圖案化層。也就是說,圖案化層形成產品的永久部分並形成沉積膜,這將是製造裝置之層堆疊的一部分。依據本揭露實施例,圖案化層104形成裝置中的功能層。導電漿料被固化以形成裝置的導電結構,這將在蝕刻處理之後例如不被去除。 The embodiments described herein refer to a patterned layer directly imprinted on a substrate by a stamp. That is, the patterned layer forms a permanent part of the product and forms a deposited film, which will be part of the layer stack of the manufacturing device. According to the disclosed embodiment, the patterned layer 104 forms a functional layer in the device. The conductive paste is cured to form the conductive structure of the device, which will not be removed, for example, after the etching process.
依據本揭露的另一方面,有關印模的一個或多個頂表面122所對應之印模的部分,中空空間214可以允許留在此處的殘留光阻劑或導電漿料材料之殘留層的薄化。相較之下,不具有足夠大的特徵深度以提供中空空間來容納空氣(在印模壓印導電漿料時會移位)、以及例如氣體(可能會排放(evolve)),將在導電漿料的此層102可能會變厚的情況下,導致過剩的殘留材料。依據本揭露印模導致減少甚至避免在基板上接收材料。 According to another aspect of the present disclosure, regarding the portion of the stamp corresponding to the one or more top surfaces 122 of the stamp, the hollow space 214 may allow the residual photoresist or the remaining layer of the conductive paste material to remain here Thinning. In contrast, not having a characteristic depth large enough to provide a hollow space to hold air (displacement when the stamp is embossed with conductive paste), and, for example, gases (which may evolve) will be present in the conductive paste This layer 102 may become thicker, resulting in excess residual material. The impression according to the present disclosure results in reducing or even avoiding receiving material on the substrate.
第2圖繪示依據本揭露實施例的印模110的另一實施例。印模110包括基底主體112及特徵114。特徵具有寬度W(及另一寬度W',未繪示於橫切面亦即第2圖中)、及深度D。如第2圖所示,印模110可具有深度D的特徵,深度係足夠大以提供中空空間214於印模110的特徵114的底表面121與圖案化層104的表面221之間。 FIG. 2 illustrates another embodiment of the stamper 110 according to the embodiment of the present disclosure. The stamp 110 includes a base body 112 and features 114. The feature has a width W (and another width W ′, which is not shown in the cross section, that is, FIG. 2), and a depth D. As shown in FIG. 2, the stamp 110 may have the feature of depth D, and the depth is large enough to provide a hollow space 214 between the bottom surface 121 of the feature 114 of the stamp 110 and the surface 221 of the patterned layer 104.
使用導電漿料進行壓印微影處理的一個方面是導電漿料在固化處理期間(部分或完全固化)將排放氣體。由印模110的特徵114深度提供的中空空間214導致壓印微影,其中材料未完全填充於印模中的特徵。因此,氣體具有一容積,並在其中排放氣體。 One aspect of the use of conductive paste for lithographic processing is that the conductive paste will emit gas during the curing process (partially or fully cured). The hollow space 214 provided by the depth of the features 114 of the stamp 110 results in embossed lithography, where the material does not completely fill the features in the stamp. Therefore, the gas has a volume, and the gas is discharged therein.
可從導電漿料排放的氣體的量,可以透過以下至少一種來調整:導電漿料的黏度、導電漿料中的材料的沸騰溫度、中空空間的容積、固化的程度、印模的額外結構特徵(參見第3圖之例子)、及其組合。 The amount of gas that can be discharged from the conductive paste can be adjusted by at least one of the following: the viscosity of the conductive paste, the boiling temperature of the material in the conductive paste, the volume of the hollow space, the degree of curing, and additional structural features of the stamp (See the example in Figure 3), and combinations thereof.
例如,材料可以添加到導電漿料,這可以增加或降低黏度。這可以導致在印模釋放之前可提供或將提供的固化時間的調整。可以將低沸點溶劑添加到光阻,例如,可以將低沸點溶劑滴定(titrate)到光阻,以增加固化過程中所排放的氣體量。中空空間214的容積的增加可以增加直到在中空空間建立(built up)一壓力的時間,這可能會對氣體的排放起相反的作用(counter-act)。此外,如第3圖所示,特徵114可以具有開口314穿孔以允許氣體從印模中排出(escape)。作為另一個實例,固化可以在真空條件下進行,例如技術(technical)真空,這可以進一步影響中空空間內的氣體壓力,特別是在存在開口或穿孔的情況下。 For example, materials can be added to the conductive paste, which can increase or decrease viscosity. This can result in adjustments to the curing time that can or will be provided before the stamp is released. A low boiling point solvent may be added to the photoresist, for example, the low boiling point solvent may be titrated to the photoresist to increase the amount of gas emitted during curing. The increase in the volume of the hollow space 214 may increase the time until a pressure is built up in the hollow space, which may have a counter-act on gas emissions. In addition, as shown in FIG. 3, feature 114 may have an opening 314 perforated to allow gas to escape from the stamp. As another example, curing can be performed under vacuum conditions, such as technical vacuum, which can further affect the gas pressure in the hollow space, especially in the presence of openings or perforations.
依據本揭露實施例,被排放的氣體被用作幫助釋放印模的一種方式。例如,(1)排放氣體力量釋放的時間,與(2)在釋放之時的固化程度,之間會有一些相互作用。其他會相互作用以影響而幫助印模釋放的方面,係如上所述,並且是選自由以下元素所組成的群組 中的至少一種元素:導電漿料的黏度、導電漿料中的材料的沸點、中空空間的容積、固化程度、印模的額外結構特徵(參見第3圖之例子)、及其組合。 In accordance with the disclosed embodiments, the vented gas is used as a way to help release the stamp. For example, there will be some interaction between (1) the time when the exhaust gas is released and (2) the degree of curing at the time of release. Other aspects that interact to influence the release of the impression are described above and are selected from the group consisting of At least one of the elements: the viscosity of the conductive paste, the boiling point of the material in the conductive paste, the volume of the hollow space, the degree of curing, the additional structural characteristics of the stamp (see the example in Figure 3), and combinations thereof.
第2圖範例性地繪示具有特徵114的印模110的實施例,其中特徵的深度被提供為在壓印印模於導電漿料之層102中時,產生中空空間214。因此,印模係被提供。印模包括基底主體和多個特徵,用於在壓印印模於層上時產生圖形,其中多個特徵由基底主體所支撐,其中多個特徵至少10%具有特徵寬度W和特徵深度D,並提供一比值D/W為5或更大,以在壓印微影期間產生中空空間。根據可與本揭露所述的其他實施例結合的另外的實施例,提供具有此處所述之壓印微影的導電材料的圖案,可以受到進一步的電鍍製造處理。電鍍會增長或進一步沉積導電材料於圖案的特徵上。因此,利用壓印微影製造的圖案可以是晶種,以用於進一步的製造處理。 FIG. 2 exemplarily illustrates an embodiment of a stamp 110 having features 114, wherein the depth of the features is provided to produce a hollow space 214 when the stamp is stamped into the layer 102 of conductive paste. Therefore, an impression system is provided. The stamp includes a base body and a plurality of features for generating a graphic when the stamp is imprinted on the layer, wherein the plurality of features are supported by the base body, and at least 10% of the features have a feature width W and a feature depth D, A ratio D / W of 5 or more is provided to generate a hollow space during the lithography. According to another embodiment, which can be combined with other embodiments described in this disclosure, the pattern of the conductive material provided with the embossed lithography described herein can be subjected to further plating manufacturing processes. Electroplating can grow or further deposit conductive materials on the features of the pattern. Therefore, the pattern produced by embossing lithography can be seeded for further manufacturing processes.
如此處所描述的,一個方向上的特徵寬度是此方向上的最大尺寸。相仿地,特徵深度是特徵的最大深度。對於多位準印模設計,一個特徵可以在相同方向和兩個或更多個深度上具有兩個或更多個寬度。例如,圓柱形特徵的寬度典型地是直徑,且圓柱形特徵的深度通常將是個別圓柱的高度。作為另一個例子,對於矩形特徵寬度和高度典型地可以由對應的長方體的尺寸所提供。 As described herein, the feature width in one direction is the largest dimension in this direction. Similarly, the feature depth is the maximum depth of the feature. For multi-level quasi-impression designs, a feature can have two or more widths in the same direction and two or more depths. For example, the width of a cylindrical feature is typically a diameter, and the depth of a cylindrical feature will typically be the height of an individual cylinder. As another example, the width and height for a rectangular feature can typically be provided by the size of the corresponding cuboid.
第3圖繪示依據本揭露實施例之印模110的另一範例。第3圖繪示在印模110已經壓印在導電漿料中之後的基板100上的圖案化層104。印模110中的特徵深度係足夠大以在圖案化層104的表 面和特徵的底表面之間具有中空空間214。依據可以與此處所述的其他實施例結合之本揭露一些實施例,中空空間214可以透過開口314與另一區域流體連通。例如,開口314可以是穿孔,特別是在印模的基底主體。依據本揭露實施例,開口,例如基底主體中的多個開口,可以被配置為使得氣流可以流出或流入中空空間。 FIG. 3 illustrates another example of the stamper 110 according to the embodiment of the disclosure. FIG. 3 illustrates the patterned layer 104 on the substrate 100 after the stamp 110 has been embossed in the conductive paste. The feature depth in the stamp 110 is large enough to represent the surface of the patterned layer 104. There is a hollow space 214 between the face and the bottom surface of the feature. According to some embodiments disclosed herein that may be combined with other embodiments described herein, the hollow space 214 may be in fluid communication with another area through the opening 314. For example, the opening 314 may be perforated, especially in the base body of the stamp. According to an embodiment of the present disclosure, the openings, such as a plurality of openings in the base body, may be configured so that airflow can flow out of or into the hollow space.
開口314或穿孔允許在固化時將從導電漿料排放的氣體釋出。依據一些實施例,開口314可以延伸穿過印模110的基底主體。因此,開口可以在中空空間214和印模110外部的區域之間提供流體連通。例如,對於在技術真空下進行的圖案化,印模外部的區域可以具有10mbar或更低、或1mbar或更低的壓力。 The openings 314 or perforations allow gas released from the conductive paste to be released upon curing. According to some embodiments, the opening 314 may extend through the base body of the stamp 110. Thus, the opening may provide fluid communication between the hollow space 214 and a region outside the stamp 110. For example, for patterning performed under a technical vacuum, the area outside the stamp may have a pressure of 10 mbar or less, or 1 mbar or less.
依據一些實施例,開口314(或穿孔)的大小可以在50μm至500μm的範圍內。依據另外的實施例,與特徵的對應的中空空間214有流體連通的兩個或更多個開口314,可打開而外通到共同的通道(channel)、或共同的另外的中空空間,特別是具有比特徵的中空空間214的容積大至少100倍(或甚至10000倍)的容積的另外的中空空間。 According to some embodiments, the size of the opening 314 (or perforation) may be in a range of 50 μm to 500 μm. According to a further embodiment, the corresponding hollow space 214 corresponding to the feature has two or more openings 314 in fluid communication, which can be opened to a common channel, or a common another hollow space, in particular An additional hollow space having a volume that is at least 100 times (or even 10,000 times) larger than the volume of the characteristic hollow space 214.
如上所述,有多種選擇可以影響在壓印微影處理期間,在壓印層的固化或預固化期間所發生之導電漿料的氣體排放。這些選項可以與其他選項組合以允許調整導電漿料的釋氣(outgas),以提供所需的圖案化層,例如,關於特徵形狀、材料成分、或類似方式等。此外,如第4A和4B圖所示,這些選項可以附加地或替代地組合,以允許有助於從基板釋放印模。 As mentioned above, there are a variety of options that can affect the gas emissions of the conductive paste that occurs during the lithographic lithography process during curing or pre-curing of the embossed layer. These options can be combined with other options to allow the outgas of the conductive paste to be adjusted to provide the desired patterned layer, for example, regarding feature shape, material composition, or the like. In addition, as shown in Figures 4A and 4B, these options may be additionally or alternatively combined to allow for facilitating the release of the impression from the substrate.
第4A圖繪示具有基底主體112的印模110。印模110係部分地壓印在導電漿料的層中以產生圖案化層104。例如,圖案化層104可以提供在基板上。依據可以與此處所述的其他實施例結合的一些實施例,導電漿料之層或圖案化層可以提供在基板上、或提供在基板上方。特別是層可被提供為與基板直接接觸,或者一或多個另外的層可提供在基板及導電漿料之層(產生裝置的圖案化層)之間。 FIG. 4A illustrates a stamper 110 having a base body 112. The stamp 110 is partially embossed in a layer of conductive paste to produce a patterned layer 104. For example, the patterned layer 104 may be provided on a substrate. According to some embodiments that may be combined with other embodiments described herein, a layer or patterned layer of a conductive paste may be provided on the substrate or provided above the substrate. In particular, the layers may be provided in direct contact with the substrate, or one or more additional layers may be provided between the substrate and a layer of conductive paste (the patterned layer of the generating device).
如第4A圖所示,中空空間214係提供在圖案化層104的上方。印模特徵的凹部未完全填充導電漿料。第4A圖繪示在印模的頂表面與基板之間具有小空間的情況。第4B圖繪示具有基底主體112的印模110完全壓印在導電漿料中的情況。印模的頂表面係接觸在導電漿料下的結構或層,例如第4B圖所示的基板100。另外,第4B圖中所示的情況在導電漿料和印模110之間具有中空空間214。中空空間214允許氣體從導電漿料排放到中空空間內。氣體的排放增加了中空空間214內的壓力。例如,由導電漿料產生的氣體排放所造成壓力,增加至少10%的印模特徵的中空空間,特別是至少50%的印模特徵,更特別是至少90%的印模特徵。中空空間內的壓力導致如箭頭402所示的力,此力可以幫助從基板釋放印模、或者可以從基板100釋放印模110。 As shown in FIG. 4A, a hollow space 214 is provided above the patterned layer 104. The recess of the stamp feature is not completely filled with the conductive paste. FIG. 4A illustrates a case where there is a small space between the top surface of the stamp and the substrate. FIG. 4B illustrates a case where the stamper 110 having the base body 112 is completely embossed in the conductive paste. The top surface of the stamp is in contact with the structure or layer under the conductive paste, such as the substrate 100 shown in FIG. 4B. In addition, the case shown in FIG. 4B has a hollow space 214 between the conductive paste and the stamp 110. The hollow space 214 allows gas to be discharged from the conductive paste into the hollow space. The discharge of gas increases the pressure in the hollow space 214. For example, the pressure caused by the gas emission generated by the conductive paste increases the hollow space of the impression feature by at least 10%, especially the impression feature by at least 50%, and more particularly the impression feature by at least 90%. The pressure in the hollow space causes a force as shown by arrow 402, which can help release the stamp from the substrate, or the stamp 110 can be released from the substrate 100.
依據本揭露實施例,藉由減小中空空間的容積、降低導電漿料的黏度、增加固化時間、加入低沸點溶劑在導電漿料、減小穿孔的尺寸(或不提供穿孔)、或其組合,可增加壓力且因而增加作用在將印模從基板釋放之釋放方向上的力。依據本揭露的實施例,藉由增 大中空空間的容積、增加導電漿料的黏度、減少固化時間、降低在導電漿料中之低沸點溶劑的量、增大穿孔的尺寸(或提供穿孔)、或其組合,可降低壓力且因而降低作用在將印模從基板釋放之釋放方向上的力。有鑑於以上,本揭露實施例允許提供預先定義的或期望的釋放力以作用於印模上,藉以改進壓印微影處理。 According to the embodiment of the disclosure, by reducing the volume of the hollow space, reducing the viscosity of the conductive paste, increasing the curing time, adding a low boiling point solvent to the conductive paste, reducing the size of the perforations (or not providing perforations), or a combination Can increase the pressure and thus the force acting in the release direction that releases the stamp from the substrate. According to the embodiment of the present disclosure, by increasing The volume of large hollow spaces, increasing the viscosity of conductive pastes, reducing curing time, reducing the amount of low boiling solvents in conductive pastes, increasing the size of perforations (or providing perforations), or a combination thereof, can reduce pressure and therefore Reduces the force acting in the release direction that releases the stamp from the substrate. In view of the above, the embodiments of the present disclosure allow providing a predefined or desired release force to act on the stamp, thereby improving the lithography process.
可以附加地或替代地提供的壓印微影處理,例如SAIL處理,詳細細節係範例性地繪示於第5圖。根據可以與此處所述的其他實施例結合之此處描述的實施例,壓印微影的方法和用於壓印微模的印模可包括於及/或用於R2R製程。壓印站可包括滾軸510,滾軸510可以圍繞滾軸510的軸514旋轉。第5圖繪示的旋轉方式如箭頭512所示。當滾軸510旋轉時,貼附至滾軸或作為滾軸一部分之印模110的圖案,係壓印在導電漿料的層102中。 An embossing lithography process, such as a SAIL process, which may be additionally or alternatively provided, is shown in detail in FIG. 5 by way of example. According to the embodiments described herein that can be combined with other embodiments described herein, the method of embossing lithography and the stamp for embossing a micro mold can be included and / or used in an R2R process. The embossing station may include a roller 510 that may rotate about an axis 514 of the roller 510. The rotation method shown in FIG. 5 is shown by arrow 512. When the roller 510 is rotated, the pattern attached to the roller or the stamp 110 as a part of the roller is embossed in the layer 102 of the conductive paste.
如第5圖所示,滾軸510具有印模110被提供在滾軸510上,或作為滾軸的一部分。當基板100通過滾軸510與例如另一滾軸502之間的間隔移動時,印模110的圖案係被浮雕(emboss)在層102之中。這產生圖案化層104。箭頭503表示其他滾軸502繞其他滾軸502的軸504的轉動方式。第5圖中的箭頭101表示基板100通過滾軸510和滾軸502之間的間隔的移動。滾軸如箭頭512和503所示旋轉。例如,依據本揭露一些實施例,沿箭頭101的基板傳送速度類似於滾軸的橫向徑向速度,亦即滾軸的切向速度。 As shown in FIG. 5, the roller 510 has a stamp 110 provided on the roller 510 or as a part of the roller. When the substrate 100 moves through the space between the roller 510 and another roller 502, for example, the pattern of the stamp 110 is embossed in the layer 102. This results in a patterned layer 104. The arrow 503 indicates the rotation manner of the other roller 502 about the axis 504 of the other roller 502. The arrow 101 in FIG. 5 indicates the movement of the substrate 100 through the space between the roller 510 and the roller 502. The rollers rotate as shown by arrows 512 and 503. For example, according to some embodiments of the present disclosure, the substrate transfer speed along arrow 101 is similar to the lateral radial speed of the roller, that is, the tangential speed of the roller.
依據本揭露實施例,R2R設備可以被提供於壓印微影,其中導電漿料係參與壓印微影的進行,特別是其中導電漿料是待製造 的裝置中的功能層。在壓印或使用印模浮雕圖案、或壓印滾軸於導電漿料之層中之前,導電漿料係提供在基板之上或上方。 According to the embodiment of the disclosure, the R2R device can be provided in the embossed lithography, in which the conductive paste is involved in the embossed lithography, especially where the conductive paste is to be manufactured Functional layers in your device. The conductive paste is provided on or above the substrate before embossing or using a stamp relief pattern, or embossing rollers in the layer of conductive paste.
第5圖繪示用於將導電漿料施加到基板100上或基板100上方的沉積單元544。提供導電漿料的施加以用於導電材料的層102。例如,一個或多個沉積單元544可以使用新月形(Meniscus)塗佈、狹縫式塗佈(slot die coating)、刮刀(doctor blade)塗佈、凹版(gravure)塗佈、柔性版(flexographic)塗佈、噴灑(spray)塗佈。在導電漿料的層102已被沉積之後,印模110係用來浮雕層102中的圖案,以產成圖案化層104。 FIG. 5 illustrates a deposition unit 544 for applying a conductive paste on or above the substrate 100. An application of a conductive paste is provided for a layer 102 of a conductive material. For example, one or more of the deposition units 544 may use Meniscus coating, slot die coating, doctor blade coating, gravure coating, flexographic ) Coating, spray coating. After the layer 102 of conductive paste has been deposited, the stamp 110 is used to emboss the pattern in the layer 102 to produce a patterned layer 104.
依據可與此處揭露的其他實施例結合的本揭露的一些實施例,經壓印的導電漿料係使用固化單元532固化。固化單元532可選自由以下所組成的群組:發光單元及加熱單元,被配置以用於在將印模壓印於此層中之時固化此層,其中發射533係被產生。例如,發光單元可以發射紫外線光(UV light),特別是在410nm到190nm的波長範圍內。另一個例子是發射單元可以發射紅外線光(IR light),特別是在9-11微米(CO2雷射)的波長範圍內。另一個例子是發射單元可以發射從紅外線到紫外線的寬頻帶光,特別是在波長範圍從3微米到250nm的發射。這種發射可以被濾波而使用光學濾波器僅選擇一部分黑體(blackbody)發射。 According to some embodiments of the present disclosure that can be combined with other embodiments disclosed herein, the embossed conductive paste is cured using a curing unit 532. The curing unit 532 may be selected from the group consisting of a light emitting unit and a heating unit configured to cure the layer when an impression is imprinted in the layer, in which an emission 533 is generated. For example, the light emitting unit may emit ultraviolet light (UV light), particularly in a wavelength range of 410 nm to 190 nm. Another example is that the emitting unit can emit infrared light (IR light), especially in the wavelength range of 9-11 microns (CO2 laser). Another example is that the emission unit can emit a wide range of light from infrared to ultraviolet, especially in the wavelength range from 3 microns to 250nm. This emission can be filtered and only a portion of the blackbody emission is selected using an optical filter.
依據可以與此處所述的其他實施例結合的又一些實施例,選擇性地,還可以提供光學測量單元,以用於評估基板處理的結果。 According to yet other embodiments that can be combined with other embodiments described herein, optionally, an optical measurement unit can also be provided for evaluating the results of substrate processing.
第5圖顯示固化單元532。固化單元532被配置為在將印模110壓印到導電漿料的層中之時,部分或完全固化導電漿料。依據本揭露實施例,可以通過固化單元的強度(例如光強度或熱發射強度)來調整固化程度。另外地或代替地,固化程度可以藉由滾軸510和基板100的轉速進行調整。 FIG. 5 shows a curing unit 532. The curing unit 532 is configured to partially or completely cure the conductive paste when the stamp 110 is imprinted into the layer of the conductive paste. According to the embodiment of the present disclosure, the degree of curing can be adjusted by the intensity of the curing unit (such as light intensity or heat emission intensity). Additionally or alternatively, the degree of curing can be adjusted by the rotation speed of the roller 510 and the substrate 100.
在藉由固化單元532部分固化的情況下,可以在固化單元532的下游(downstream)提供第二固化單元534,其中第二發射535係被產生。第二固化單元534可以將部分固化的圖案化層104完全固化。 In the case of partial curing by the curing unit 532, a second curing unit 534 may be provided downstream of the curing unit 532, wherein the second emission 535 is generated. The second curing unit 534 can completely cure the partially cured patterned layer 104.
依據本揭露實施例,導電漿料係用壓印微影而被壓印。被壓印的材料,例如光阻材料,可以是產品的永久部分,並形成沉積膜。此處所述的實施例參照至直接由印模壓印之基板上的圖案化層。也就是說,圖案化層形成產品的永久部分並形成沉積膜,這將是所製造之裝置之層堆疊的一部分。依據本揭露實施例,圖案化層104形成裝置中的功能層。 According to the embodiment of the present disclosure, the conductive paste is embossed by embossing lithography. The embossed material, such as a photoresist material, can be a permanent part of the product and form a deposited film. The embodiments described herein refer to a patterned layer on a substrate directly imprinted by a stamp. That is, the patterned layer forms a permanent part of the product and forms a deposited film, which will be part of the layer stack of the device being manufactured. According to the disclosed embodiment, the patterned layer 104 forms a functional layer in the device.
第6圖繪示依據本揭露實施例之使用壓印微影之圖案化的方法的流程圖。如方框602所示,導電漿料的層係被提供。導電漿料的黏度為0.3Pa.s或以上。導電漿料配置以形成功能層於藉由此方法製造之裝置中。如方框604所示,此方法包括在導電漿料的層中壓印或使用印模浮雕圖案,以生成導電漿料的圖案化層。方框606進一步繪示完全地或部分地固化的圖案化層。依據可與本揭露其他實施例結合的本揭露的一些實施例,印模從圖案化層釋放,其中特別地, 在固化期間從導電漿料排放至印模特徵之中空空間內的氣體壓力,分別地可以從基板的圖案化層幫助釋放印模、或者可以從基板的圖案化層釋放印模。依據可以與此處所述其他實施例結合的又一個實施例,方框604可以包括在導電漿料的層中壓印或使用印模浮雕圖案、部分地固化導電漿料、以及將印模從導電漿料的層釋放。 FIG. 6 is a flowchart of a patterning method using embossed lithography according to an embodiment of the disclosure. As shown in block 602, a layer of conductive paste is provided. The viscosity of the conductive paste is 0.3Pa. s or more. The conductive paste is configured to form a functional layer in a device manufactured by this method. As shown in block 604, the method includes embossing or using a stamp relief pattern in a layer of conductive paste to generate a patterned layer of conductive paste. Block 606 further depicts a fully or partially cured patterned layer. According to some embodiments of the disclosure that can be combined with other embodiments of the disclosure, the stamp is released from the patterned layer, wherein, in particular, The gas pressure discharged from the conductive paste into the hollow space of the stamp feature during curing can help release the stamp from the patterned layer of the substrate, or can release the stamp from the patterned layer of the substrate, respectively. According to yet another embodiment that may be combined with other embodiments described herein, block 604 may include embossing or using a stamp relief pattern in a layer of conductive paste, partially curing the conductive paste, and removing the stamp from The layer of conductive paste is released.
本揭露實施例具有多個優點,包括:利用壓印微影對導電漿料進行壓印,以形成例如裝置的功能層,其中可以提供小特徵尺寸;藉由考量中空空間而提供特徵深度,在圖案化層的固化期間允許氣體從導電漿料排放;設計中空空間、及/或與中空空間流體連通的開口,以允許增加或減少排放至中空空間內氣體的壓力,特別是用於調整及/或控制中空空間內的氣體壓力;提供印模釋放力、或由於中空空間內的壓力而幫助釋放印模之力;減少圖案化層固化後的殘留材料;允許具高深寬比導電材料的圖案化;允許小特徵製造於可彎曲的基板上,特別是具備高產出率;及/或允許自對準導電層的製造。 The disclosed embodiments have multiple advantages, including: embossing conductive paste using embossing lithography to form, for example, a functional layer of a device, which can provide a small feature size; by considering the hollow space to provide feature depth, in Allowing gas to be discharged from the conductive paste during the curing of the patterned layer; designing the hollow space and / or openings in fluid communication with the hollow space to allow increasing or decreasing the pressure of the gas discharged into the hollow space, especially for adjusting and / Or control the gas pressure in the hollow space; provide the release force of the stamp, or help release the stamp due to the pressure in the hollow space; reduce the residual material after the patterning layer is cured; allow patterning of conductive materials with high aspect ratio ; Allow small features to be fabricated on flexible substrates, especially with high yields; and / or allow the manufacture of self-aligned conductive layers.
綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.
Claims (13)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??PCT/US2016/045769 | 2016-08-05 | ||
| PCT/US2016/045769 WO2018026378A1 (en) | 2016-08-05 | 2016-08-05 | Method of imprint lithography of conductive materials; stamp for imprint lithography, and apparatus for imprint lithograph |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201815545A TW201815545A (en) | 2018-05-01 |
| TWI663038B true TWI663038B (en) | 2019-06-21 |
Family
ID=61073033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106126054A TWI663038B (en) | 2016-08-05 | 2017-08-02 | Method of imprint lithography of conductive materials; stamp for imprint lithography, and apparatus for imprint lithograph |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2019527938A (en) |
| KR (1) | KR20190027389A (en) |
| CN (1) | CN109564852A (en) |
| TW (1) | TWI663038B (en) |
| WO (1) | WO2018026378A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10948818B2 (en) * | 2018-03-19 | 2021-03-16 | Applied Materials, Inc. | Methods and apparatus for creating a large area imprint without a seam |
| WO2019185110A1 (en) * | 2018-03-26 | 2019-10-03 | Applied Materials, Inc. | Method for producing a multilevel imprint master, multilevel imprint master, and use of a multilevel imprint master |
| US10705268B2 (en) * | 2018-06-29 | 2020-07-07 | Applied Materials, Inc. | Gap fill of imprinted structure with spin coated high refractive index material for optical components |
| EP3850433A1 (en) * | 2018-09-12 | 2021-07-21 | Applied Materials, Inc. | Method of manufacturing a stamp for imprint lithography, stamp for imprint lithography, imprint roller and roll-to-roll substrate processing apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200846278A (en) * | 2007-05-24 | 2008-12-01 | Contrel Technology Co Ltd | Method for producing viscous micro-structure |
| US20090046362A1 (en) * | 2007-04-10 | 2009-02-19 | Lingjie Jay Guo | Roll to roll nanoimprint lithography |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296043A (en) * | 1990-02-16 | 1994-03-22 | Canon Kabushiki Kaisha | Multi-cells integrated solar cell module and process for producing the same |
| JPH08118467A (en) * | 1994-10-21 | 1996-05-14 | Matsushita Electric Ind Co Ltd | Green sheet for screen printing |
| US7857611B2 (en) * | 2006-02-14 | 2010-12-28 | Pioneer Corporation | Imprinting device and imprinting method |
| US20070298176A1 (en) * | 2006-06-26 | 2007-12-27 | Dipietro Richard Anthony | Aromatic vinyl ether based reverse-tone step and flash imprint lithography |
| EP2095187A2 (en) * | 2006-12-05 | 2009-09-02 | Nano Terra Inc. | Method for patterning a surface |
| CN101675174A (en) * | 2007-02-13 | 2010-03-17 | 耶鲁大学 | Method for imprinting and erasing amorphous metal alloys |
| KR20090061771A (en) * | 2007-12-12 | 2009-06-17 | 인하대학교 산학협력단 | Mold Structure Formation Method of Nanoimprint Lithography Process Technique for Microstructure Fabrication |
| JP5388539B2 (en) * | 2008-10-28 | 2014-01-15 | 旭化成イーマテリアルズ株式会社 | Pattern formation method |
| JP5518538B2 (en) * | 2009-03-26 | 2014-06-11 | 富士フイルム株式会社 | RESIST COMPOSITION, RESIST LAYER, IMPRINT METHOD, PATTERN FORMED BODY, MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD, AND MAGNETIC RECORDING MEDIUM |
| JP2010262959A (en) * | 2009-04-30 | 2010-11-18 | Murata Mfg Co Ltd | Forming method of wiring pattern |
| JP2010263000A (en) * | 2009-04-30 | 2010-11-18 | Murata Mfg Co Ltd | Method of manufacturing electronic component |
| KR101076520B1 (en) * | 2009-06-11 | 2011-10-24 | 고려대학교 산학협력단 | Fabrication method of oftoelectronic device using nano imprint lithography process |
| JP2010287765A (en) * | 2009-06-12 | 2010-12-24 | Murata Mfg Co Ltd | Imprinting method, wiring pattern forming method, and multilayer electronic component |
| JP5540628B2 (en) * | 2009-09-28 | 2014-07-02 | 大日本印刷株式会社 | Nanoimprint pattern forming method |
| JP5491997B2 (en) * | 2010-07-07 | 2014-05-14 | 株式会社東芝 | Template manufacturing method and semiconductor device manufacturing method |
| JP5599355B2 (en) * | 2011-03-31 | 2014-10-01 | 富士フイルム株式会社 | Mold manufacturing method |
| WO2012167076A2 (en) * | 2011-06-01 | 2012-12-06 | The Regents Of The University Of Michigan | Nanochannel-guided patterning for polymeric substrates |
| CN103959485A (en) * | 2011-09-23 | 2014-07-30 | 1366科技公司 | Techniques for improved imprinting of soft material on substrate using stamp including underfilling to leave a gap and pulsing stamp |
| JP5824399B2 (en) * | 2012-03-30 | 2015-11-25 | 富士フイルム株式会社 | Resin mold for nanoimprint and manufacturing method thereof |
| JP6307269B2 (en) * | 2013-04-09 | 2018-04-04 | 旭化成株式会社 | Laminate for forming fine pattern and method for producing mold |
-
2016
- 2016-08-05 JP JP2019506171A patent/JP2019527938A/en active Pending
- 2016-08-05 WO PCT/US2016/045769 patent/WO2018026378A1/en not_active Ceased
- 2016-08-05 CN CN201680088160.3A patent/CN109564852A/en active Pending
- 2016-08-05 KR KR1020197006249A patent/KR20190027389A/en not_active Ceased
-
2017
- 2017-08-02 TW TW106126054A patent/TWI663038B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090046362A1 (en) * | 2007-04-10 | 2009-02-19 | Lingjie Jay Guo | Roll to roll nanoimprint lithography |
| TW200846278A (en) * | 2007-05-24 | 2008-12-01 | Contrel Technology Co Ltd | Method for producing viscous micro-structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019527938A (en) | 2019-10-03 |
| CN109564852A (en) | 2019-04-02 |
| KR20190027389A (en) | 2019-03-14 |
| WO2018026378A1 (en) | 2018-02-08 |
| TW201815545A (en) | 2018-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI663038B (en) | Method of imprint lithography of conductive materials; stamp for imprint lithography, and apparatus for imprint lithograph | |
| TWI743243B (en) | Systems and methods for creating fluidic assembly structures on a substrate | |
| US9180483B2 (en) | Integrated coating system | |
| KR20050075580A (en) | Fabricating method of larger area stamp with nano imprint lithography | |
| JP2011029248A (en) | Method of manufacturing mold for nanoimprint | |
| CN109683445A (en) | A kind of joining method of nano-pattern, nano impression plate, grating and production method | |
| KR20100074434A (en) | Pattern transfer method of nanoimprint lithography using shadow evaportation and nanotransfer printing | |
| JP6338938B2 (en) | Template, manufacturing method thereof and imprint method | |
| JP2010052419A (en) | Methods for manufacturing ceramic green sheet and multilayer ceramic circuit board using the same | |
| KR20070117134A (en) | Formation method of fine pattern using nanoimprint | |
| KR101015065B1 (en) | Metal line patterning method on a substrate using nanoimprint lithography | |
| KR101196677B1 (en) | Method for drawing fine pattern | |
| KR100918850B1 (en) | Method for forming nano-patterns using nano imprint lithography and lift-off process | |
| KR20090069932A (en) | Manufacturing method of stamp for nano imprint | |
| TWI711881B (en) | Method for producing a multilevel imprint master, multilevel imprint master, and use of a multilevel imprint master | |
| KR100803749B1 (en) | Large area stamper manufacturing method | |
| TWI603834B (en) | Method for manufacturing circuit board and stamp | |
| KR101391807B1 (en) | Method of forming pattern by using inkjet printing and nano imprinting | |
| TW202024784A (en) | Method of manufacturing a stamp for imprint lithography, stamp for imprint lithography, imprint roller for a roll to roll substrate processing apparatus and roll-to-roll substrate processing apparatus | |
| KR101716851B1 (en) | Method for manufacturing a micro/nano pattern using solution materials | |
| KR101226914B1 (en) | Method for drawing fine pattern and cliche manufactured by using the same | |
| KR101151648B1 (en) | Printing technique with high aspect ratio electrode formation method | |
| KR20120067751A (en) | Method of forming nano imprint lithography pattern | |
| CN114200797B (en) | Mask for splicing and aligning nano-imprint metal grating and metal grating splicing method | |
| KR20120119462A (en) | Method for printing conductive circuits using uv rotating molding machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |