TWI711881B - Method for producing a multilevel imprint master, multilevel imprint master, and use of a multilevel imprint master - Google Patents

Abstract

A method for producing a multilevel imprint master is described. The method includes providing a substrate (10) having a main surface (10A) providing a first level (11) and creating a first set (21) of features in the substrate (10). The first set (21) of features provides a second level (12) being below the first level (11). Further, the method includes creating a second set (22) of features on the substrate (10). The second set (22) of features provides a third level (13) being above the first level (11).

Description

Method for making a multi-layered impression, multi-layered impression, And the use of a multi-layer impression

The several embodiments of the present disclosure are related to several methods of manufacturing three-dimensional patterns, especially the method of manufacturing three-dimensional patterns for the manufacture of master templates. An example of this master template is used in imprint stamps. ) The master template of the manufacturing. In particular, several embodiments of the present disclosure are related to several methods of manufacturing several multi-layer three-dimensional patterns to provide a multilevel imprint master. This multi-layered stamp can be used to manufacture stamp cores, for example, which is used in stamp lithography technology.

The patterning factor of the film is required for various applications, for example, the demand for manufacturing microelectronic devices, optoelectronic devices, or optical devices. Optical lithography technology can be used to pattern films in devices. However, optical lithography technology may be expensive and/or may face limitations, especially for substrates with large dimensions.

Especially for roll-to-roll processing, the use of traditional technology without using expensive lithography technology to produce small feature sizes has limitations. Department of Printing Technology For example, it is limited by the feature size, for example, >10μm, which may not be small enough. The printing technology is, for example, screen print, gravure, flexographic, inkjet, and the like. In addition, the sheet-to-sheet process can benefit from the imprint lithography process. Imprint lithography technology can provide a cheaper process to pattern films to provide patterned structures in devices.

In order to produce a patterned structure in the embossing process, a mold core with a structure to be embossed is generally used. For the production of imprinting mold cores, the master template is used to provide a negative type of structure to be imprinted. For example, in order to transfer the structure of the master template to the imprint core, the master template may be coated with a polymer layer. After separating the polymer layer from the master template, the surface of the polymer layer includes the opposite structure of the structure of the negative master template. The structured polymer layer can then be used to provide the embossed structure of the embossed core.

There are several technical challenges in making an impression die system. In particular, it is still challenging to manufacture multi-layer molds that can ensure the sidewall angle and depth uniformity of the mold structure characteristics at many depths in the multi-layer mold. Furthermore, manufacturing a mold system with a three-dimensional structure is the key to manufacturing a high-accuracy mold core used in imprint lithography technology. The model system of the three-dimensional structure has the characteristics of high aspect ratios and/or a wide range of depth, and provides high structural accuracy.

Therefore, in view of the above, there is a continuing need for improved methods for manufacturing a number of stamping dies to provide improved stamping dies for manufacturing a number of stamping mold cores.

In view of the above, a method for manufacturing a multi-layered impression, a multi-layered impression, and the use of a multi-layered impression for making an impression mold core are proposed according to the scope of the independent patent application. Other aspects, advantages, and features are made clearer by referring to the attached patent scope, description, and accompanying drawings.

According to one aspect of this disclosure, a method for manufacturing a multi-layered impression is provided. The method includes providing a substrate having a main surface, the main surface providing a first height; and generating a first set of features in the substrate. This first set of features provides a second height lower than the first height. Furthermore, the method includes generating a second set of features on the substrate. This second set of features provides a third height that is higher than the first height.

According to other aspects of the present disclosure, a method for manufacturing a multi-layer stamp is provided. The method includes providing a substrate; and coating the substrate to have a first layer of a first photoresist material. The first layer has a main surface, and the main surface provides a first height. In addition, the method includes generating a first set of features in the first layer. This first set of features provides a second height that is lower than the first height. Furthermore, the method includes generating a second set of features on the main surface of the first layer. The second set of features provides a third height that is higher than the first height.

According to another aspect of the present disclosure, a multi-layer stamp is provided. The multi-layer stamp is made by one of the methods described in any of the embodiments described herein.

According to other aspects of the present disclosure, a use of one of the multi-layered stamps according to any of the embodiments described herein is provided for manufacturing an stamping mold core.

Several embodiments also relate to equipment used to perform the disclosed methods, and include equipment components used to perform each of the described methods. These methods can be implemented by hardware components, computers programmed by suitable software, any combination of the two, or any other means. In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows:

10: substrate

10A: Main surface

11: First height

12: second height

13: third height

21: The first set of features

21B: bottom wall

21S, 22S: side wall

22: The second set of features

22T: top wall

31: The first mask

32: second mask

40: photoresist layer

40A: upper surface

51: first layer

51A: First major surface

52: second layer

52A: Second major surface

100: Multi-layer impression

200, 300: method

210-230, 310-340: block

D: depth

H: height

In order to understand the above-mentioned features of the present disclosure in detail, the more specific descriptions of the present disclosure briefly extracted above can be referred to several embodiments. The attached drawings are related to several embodiments of the present disclosure and are described below: Figures 1A to 1C show the stages of an example method of the method for manufacturing a multilayer stamp according to the embodiments described herein Schematic diagram; Figures 2A to 2F show schematic diagrams of exemplary process stages of the method for manufacturing a multilayer stamp according to other embodiments described herein; Figures 3A to 3E show still other embodiments described herein A schematic diagram of an exemplary method stage of a method for manufacturing a multilayer stamp; and FIGS. 4A and 4B show a flowchart of an embodiment of a method for manufacturing a multilayer stamp according to the embodiment described herein.

The detailed reference will be achieved with several embodiments of the present disclosure, and one or more examples of the several embodiments of the present disclosure are shown in the drawings. In the description of the drawings below, the same reference numbers refer to the same elements. Only the differences between the individual embodiments are explained. The examples are provided by illustrating the method of this disclosure This is not meant to be a limitation of this disclosure. Furthermore, the features described or described as part of one embodiment can be used in other embodiments or combined with other embodiments to obtain still other embodiments. This means that this description includes these adjustments and changes.

Illustratively referring to FIGS. 1A to 1C and 4A, several embodiments of the method for manufacturing a multilayer stamp according to the present disclosure are described. According to several embodiments that can be combined with any other embodiments described herein, the method includes providing a substrate 10 having a main surface 10A, and the main surface 10A provides a first height 11, as exemplarily shown in Figure 1A Show. The process of providing the substrate 10 with the main surface 10A providing the first height 11 is exemplarily represented by the block 210 in FIG. 4A. FIG. 4A shows a flowchart of a method 200 for manufacturing a multi-layer stamp according to several embodiments described herein.

As exemplarily shown in FIG. 1A, the first height 11 corresponds to the height of the main surface 10A. In particular, the main surface 10A is the upper surface of the substrate 10. Generally speaking, the substrate mentioned here is a flat substrate, for example a plate or a disc. Furthermore, the substrate described here may include or consist of a material. This material is selected from the group consisting of semiconductor, silicon, quartz or glass.

In addition, as exemplarily shown in FIG. 1B, the method includes generating a first set of features 21 in the substrate 10. In this disclosure, the name "creating" can be understood as "fabricating, manufacturing or producing". The process of generating the first set of features 21 in the substrate 10 is exemplarily represented by the block 220 in FIG. 4A.

The first set of features 21 provides a second height 12 that is lower than the first height 11. Generally speaking, the second height 12 is substantially parallel to the first height 11. In this disclosure, the name "substantially parallel" can be understood as a parallel with a certain degree of tolerance, for example, a deviation of ±2° from parallelism, especially a deviation of ±1°, and more particularly a deviation of ±0.5° .

D

20μm，特別是7μm

D

15μm，舉例為D=10μm±2μm。 In particular, as exemplarily shown in FIG. 1B, the first set of features 21 extend from the first height 11 to the second height 12. More particularly, the first set of features 21 generally has a depth D. The depth D can be regarded as the distance between the first height 11 and the second height 12. In particular, the depth D of the first set of features can be 5μm

D

20μm, especially 7μm

D

15μm, for example, D=10μm±2μm.

For example, the first set of features 21 may include one or more features selected from the group consisting of grooves, cavities, grooves or holes. Furthermore, as exemplarily shown in Figure 1B, the first set of features 21 generally includes side walls 21S and bottom walls 21B. The side wall 21S extends from the main surface 10A of the substrate 10 to the bottom wall 21B. Generally speaking, the side wall 21S is substantially perpendicular to the main surface 10A of the substrate 10. In this disclosure, the name "substantially vertical" can be understood as a vertical with a certain degree of tolerance, for example, a deviation of ±2° from vertical, especially a deviation of ±1°, and more particularly a deviation of ±0.5° . The bottom wall 21B is generally substantially parallel to the main surface 10A of the substrate 10. As shown exemplarily in Figure 1B, the length of the sidewall 21S of the first set of features 21 generally corresponds to the depth D. As can be seen from FIG. 1B, the bottom wall 21B of the first set of features 21 generally corresponds to the second height 12.

Therefore, it will be understood that creating the first set of features 21 in the substrate 10 generally involves removing the material of the substrate.

Furthermore, as exemplarily shown in FIG. 1C, the method includes generating a second set of features 22 on the substrate 10. The process of generating the second set of features 22 on the substrate 10 is exemplified by the block 230 in FIG. 4A.

H

20μm，特別是7μm

H

15μm，舉例為H=10μm±2μm。 The second set of features 22 provides a third height 13 which is higher than the first height 11. Generally speaking, the third height 13 is substantially parallel to the first height 11. In particular, the second set of features 22 extends from the first height 11 to the third height 13. More specifically, the second set of features 22 generally have a height H. The height H can be regarded as the distance between the first height 11 and the third height 13. In particular, the height H of the second set of features can be 5μm

H

20μm, especially 7μm

H

15μm, for example, H=10μm±2μm.

For example, the second set of features 22 may include one or more features selected from the group consisting of protrusions, rods, pillars, or other geometric shapes extending from the main surface 10A of the substrate 10 to the third height 13. Furthermore, as exemplarily shown in FIG. 1C, the second set of features 22 generally includes side walls 22S and top walls 22T. The side wall 22S extends from the main surface 10A of the substrate 10 to the top wall 22T. Generally speaking, the sidewall 22S is substantially perpendicular to the main surface 10A of the substrate 10. The top wall 22T is generally substantially parallel to the main surface 10A of the substrate 10. As shown exemplarily in Figure 1C, the length of the sidewall 22S of the second set of features 22 generally corresponds to the height H. As can be seen in FIG. 1C, the top wall 22T of the second set of features 22 generally corresponds to the third height 13.

Therefore, it will be understood that creating the second set of features 22 on the substrate 10 generally includes adding material to the substrate.

Therefore, compared with the conventional method, the several embodiments of the method for manufacturing the multi-layer stamp described herein are improved. In particular, several embodiments of the present disclosure advantageously provide a mixing method, that is, a method including a material removal process and a material addition process. The hybrid manufacturing method described here has the advantage that the structure of the multi-layer stamp can be manufactured with higher accuracy. That is to say, compared to the features obtained by traditional methods, the combination of the material removal process and the subsequent material addition process advantageously provides a higher resolution, better uniformity, and better accuracy. The possibility of embossing the characteristics of the mold.

In particular, the several embodiments of the method described here are particularly well-suited for manufacturing an impression mold having three (or more) heights, wherein the first set of features provided at the first height is greater than Other groups of features at other heights are more densely distributed. Examples of other groups of features at other heights are the second group of features at the third height as described herein. More particularly, it is advantageous to generate the first set of features by using a subtractive process and to generate the second set of features by using an additive process. The second set of features can be independent of the first set of features. Group feature height and feature size to generate. The reduction process is also the material removal process. The addition process is also the material addition process. Therefore, compared with the traditional method for manufacturing an imprint mold, the methods disclosed in the present disclosure advantageously provide the possibility of manufacturing an imprint mold with a higher feature density and an increased feature height. In particular, the several embodiments of the present disclosure are advantageously provided, and especially in several depths Improved feature sidewall angle uniformity and depth uniformity. Therefore, high-quality multi-laminated impressions can be advantageously manufactured.

Exemplarily referring to FIGS. 2A to 2F, other example details of the method for manufacturing a multilayer stamp according to the present disclosure are described. According to some embodiments that can be combined with other embodiments described herein, generating the first set of features 21 includes providing a patterned first mask 31 on the substrate 10, as exemplarily shown in FIG. 2A. In particular, the first mask 31 may be provided to directly contact the main surface 10A of the substrate. Generally speaking, the first mask 31 includes a pattern to be transferred to the substrate 10. In other words, the first mask 31 is generally used as a template to generate the first set of features 21 in the substrate 10.

Therefore, referring to FIG. 2B as an example, for example, using an etching process, generating the first set of features 21 may include transferring the pattern of the first mask to the substrate 10. For example, the etching process may be a wet etching process. In particular, by using a liquid ("wet") etchant, the wet etching process can be understood as a process of material removal, such as a masking pattern of the material.

Alternatively, the etching process may be a dry etching process. In particular, the dry etching process can be understood as a process of material removal by exposing the material to ion bombardment, for example, a masking pattern of the material. For example, the bombardment of ions can be carried out by reacting gases (for example, fluorocarbons, oxygen, chlorine, or boron trichloride, preferably adding nitrogen, argon, helium and other gases) Plasma provides, dislodging several parts of the material from the exposed surface.

Generally speaking, after the first set of features 21 have been generated, the first mask 31 is removed from the substrate, so that the main surface 10A of the substrate 10 is exposed, as exemplarily shown in FIG. 2C.

As exemplarily shown in FIG. 2D, according to some embodiments that can be combined with other embodiments described herein, generating the second set of features 22 includes coating the substrate 10 with a photoresist layer 40. For example, coating a substrate with a photoresist layer may include using a spin coating process. Generally, the photoresist layer 40 is provided above the substrate 10. In particular, the photoresist layer 40 fills the first set of features 21 provided in the substrate 10 and covers the main surface 10A of the substrate 10. Furthermore, the upper surface 40A of the photoresist layer 40 generally provides a third height 13.

Furthermore, as exemplarily shown in FIGS. 2E and 2F, generating the second set of features 22 generally includes a patterned photoresist layer 40. For example, the patterned photoresist layer 40 may include exposing the photoresist layer to light through the second mask 32, as exemplarily shown in FIG. 2E. Furthermore, generating the second set of features 22 generally includes applying a photoresist developer to the photoresist layer 40, especially the surface of the photoresist layer 40.

For example, the photoresist may be a positive photoresist. Positive photoresist can be understood as a form of photoresist. In this type of photoresist, the part of the photoresist exposed to light becomes soluble in the photoresist developer. The unexposed part of the positive photoresist is still insoluble in the photoresist developer. Alternatively, the photoresist may be a negative photoresist. Negative photoresist can be understood as a form of photoresist. In this type of photoresist, the part of the photoresist exposed to light becomes insoluble in the photoresist developer. The unexposed part of the negative photoresist is still dissolved in the photoresist developer.

Therefore, it will be understood that a negative photoresist is used in the exemplary embodiment shown in FIGS. 2E and 2F, that is, the photoresist layer 40 includes or consists of a negative photoresist. According to other embodiments that are not explicitly shown, a positive photoresist may be used, that is, the photoresist layer 40 may include or be composed of a positive photoresist. Therefore, in the case of a positive photoresist system application, the second mask 32 can be adapted accordingly. In particular, in order to generate the second set of features 22 exemplarily shown in Figure 2F by the positive photoresist, the second mask 32 will be the opposite of the mask shown in Figure 2E.

Therefore, the multi-layered stamp 100 exemplarily shown in Figure 2F can be advantageously manufactured by several embodiments of the method described herein.

Exemplarily referring to FIGS. 3A to 3E and 4B, the method for manufacturing a multi-layer stamp according to other embodiments is described. According to some embodiments that can be combined with other embodiments described herein, the method includes providing a substrate 10 as exemplarily shown in FIG. 3A. The process of providing the substrate 10 is exemplarily represented by block 310 in FIG. 4B. FIG. 4B shows a flowchart of another method 300 for manufacturing a multilayer stamp according to several embodiments described herein.

Therefore, the method includes coating the substrate 10 with a first layer 51 of a first photoresist material, as exemplarily shown in FIG. 3B. The process of coating the substrate 10 with the first layer 51 of the first photoresist material is exemplarily represented by the block 320 in FIG. 4B.

In particular, the first layer 51 of the first photoresist material is generally provided to directly contact the main surface 10A of the substrate 10. For example, coating the substrate 10 to have the first layer 51 of the first photoresist material may include using a spin coating process. As shown in Figure 3B It is shown that the first layer of the first photoresist material generally has a first main surface 51A, and the first main surface 51A provides a first height 11. Generally speaking, the first main surface 51A of the first layer 51 of the first photoresist material is substantially parallel to the main surface 10A of the substrate 10. The first main surface 51A of the first layer 51 of the first photoresist material is the upper surface of the first layer 51 of the first photoresist material.

In addition, as exemplarily shown in FIGS. 3B and 3C, the method includes generating a first set of features 21 in the first layer 51 of the first photoresist material. The process of generating the first set of features 21 in the first layer 51 of the first photoresist material is exemplarily shown by block 330 in Figure 4B.

As exemplarily shown in FIG. 3B, the first set of features 21 provide a second height 12, and the second height 12 is lower than the first height 11. In particular, the first set of features 21 in the first layer 51 of the first photoresist material extends from the first height 11 to the second height 12. Generally speaking, the second height 12 corresponds to the height of the main surface 10A of the substrate 10.

D

20μm，特別是7μm

D

15μm，舉例為D=10μm±2μm。 More particularly, the first set of features 21 in the first layer 51 of the first photoresist material generally has a depth D. The depth D can be regarded as the distance between the first height 11 and the second height 12. In particular, the depth D of the first set of features can be 5μm

D

20μm, especially 7μm

D

15μm, for example, D=10μm±2μm.

For example, the first set of features 21 of the first layer 51 of the first photoresist material may include one or more features selected from the group consisting of grooves, cavities, grooves, or holes. Furthermore, as exemplarily shown in FIG. 3C, the first set of features 21 in the first layer 51 of the first photoresist material generally includes sidewalls 21S and bottom walls 21B. Sidewall 21S from the first light The first main surface 51A of the first layer 51 of the resist material extends to the bottom wall 21B. The bottom wall 21B generally corresponds to the main surface 10A of the substrate 10. The sidewall 21S is generally substantially perpendicular to the first main surface 51A of the first layer 51 of the first photoresist material.

The bottom wall 21B of the first set of features 21 is generally substantially parallel to the first major surface 51A of the first layer 51 of the first photoresist material. As exemplarily shown in FIG. 3B, the length of the sidewall 21S of the first group of features 21 generally corresponds to the depth D. As shown in FIG. 3C, the bottom wall 21B of the first set of features 21 in the first layer 51 of the first photoresist material generally corresponds to the second height 12.

Therefore, it will be understood that creating the first set of features 21 in the first layer 51 of the first photoresist material generally includes removing the material of the first layer 51.

In particular, referring exemplarily to FIG. 3B, according to some embodiments that can be combined with other embodiments described herein, generating the first set of features 21 in the first layer 51 of the first photoresist material includes providing a first mask 31 is above the first layer 51 of the first photoresist material. As shown in Figure 3B, the first mask 31 may be a first mask.

Therefore, as exemplarily shown in FIG. 3B, generating the first set of features 21 in the first layer 51 of the first photoresist material includes a patterned first layer 51. In particular, the patterned first layer 51 may include exposing the first layer 51 of the first photoresist material to light through the first mask 31, as exemplarily shown in FIG. 3B. For example, as can be understood from FIGS. 3B and 3C, the first photoresist material may be a positive photoresist. Therefore, generating the first set of features 21 in the first layer 51 of the first photoresist material generally includes supplying photoresist developer to the first photoresist material, especially the first major surface 51A of the first layer 51. Therefore, in the case of using a positive photoresist for the first layer, the light exposed part of the first layer is soluble Solution in photoresist developer. Based on the application of the photoresist developer, the light-exposed part of the first layer is dissolved, that is, washed away, and the unexposed part of the first layer is maintained, as shown exemplarily in Figure 3C.

Furthermore, referring exemplarily to FIGS. 3D and 3E, the method includes generating a second set of features 22 on the first main surface 51A of the first layer 51 of the first photoresist material. The second set of features 22 provides a third height 13 which is higher than the first height 11. The process of generating the second set of features 22 on the first main surface 51A of the first layer 51 is exemplified by the block 340 in FIG. 4B.

H

20μm，特別是7μm

H

15μm，舉例為H=10μm±2μm。 As shown exemplarily in FIG. 3E, the third height 13 is generally substantially parallel to the first height 11. In particular, the second set of features 22 provided on the first main surface 51A of the first layer 51 of the first photoresist material extends from the first height 11 to the third height 13. More specifically, the second set of features 22 generally have a height H. The height H can be regarded as the distance between the first height 11 and the third height 13. In particular, the height H of the second set of features can be 5μm

H

20μm, especially 7μm

H

15μm, for example, H=10μm±2μm.

In particular, as exemplarily shown in FIG. 3D, generating the second set of features 22 includes coating a first layer 51 with a second layer 52 of a second photoresist material. Generally speaking, the second photoresist material has a light sensitivity opposite to that of the first photoresist material. Therefore, in the exemplary embodiment described with reference to FIGS. 3A to 3E, the second photoresist material is a negative photoresist. For example, coating the first layer 51 and the second layer 52 with the second photoresist material may include using a spin coating process. As exemplarily shown in Fig. 3D, the second layer 52 of the second photoresist material generally has a second main surface 52A. The two main surfaces 52A provide a third height 13. The third height 13 is higher than the first height 11. Generally speaking, the second main surface 52A of the second layer 52 of the second photoresist material is substantially parallel to the main surface 10A of the substrate 10. The second main surface 52A of the second layer 52 of the second photoresist material is also the upper surface of the second layer 52 of the second photoresist material.

Furthermore, referring to FIGS. 3D and 3E as an example, the second set of features 22 generated generally includes a second layer 52 of patterned second photoresist material. In particular, the patterning of the second layer 52 may include exposing the second layer 52 to light through the second mask 32, as exemplarily shown in the 3D drawing. The second mask 32 is particularly a second mask. Furthermore, generating the second set of features 22 generally includes supplying a photoresist developer to the second photoresist material, especially the second main surface 52A of the second layer 52.

Therefore, in the case of using the negative photoresist for the second layer, the light-exposed portion of the first layer becomes insoluble in the photoresist developer. Based on the application of the photoresist developer, the unexposed part of the second layer is dissolved, that is, washed away, and the light exposed part of the second layer is maintained, as shown exemplarily in Figure 3E.

Therefore, it will be understood that creating the second set of features 22 on the first layer 51 of the first photoresist material includes adding material on the first major surface 51A of the first layer 51.

Therefore, from the perspective of FIGS. 3B to 3E, it will be understood that, according to example embodiments, the first photoresist material may be a positive photoresist and the second photoresist material may be a negative photoresist. Alternatively, the first photoresist material may be a negative photoresist and the second photoresist material may be a positive photoresist.

Therefore, the multi-layer stamp 100 exemplarily shown in FIG. 3E can be manufactured by several embodiments of the method described herein.

N

50的範圍。 Although not explicitly shown in the drawings, it will be understood that the principle of the method for making a multi-layered impression as described herein is not limited to a three-layered impression. In particular, by repeating the process of generating the first set of features as described herein and/or repeating the process of generating the second set of features as described herein, it is possible to manufacture an imprint mold having more than three layers. For example, in other material removal procedures, a fourth set of features that provide a fourth height can be manufactured. Therefore, in other material addition procedures, a fifth set of features that provide a fifth height can be manufactured. In other words, by repeating the method described here, an N-layer imprint mold can be provided, where N is selected from 3

N

The range of 50.

According to other aspects of the present disclosure, the use of a multi-layered stamp according to any of the embodiments described herein is proposed for the manufacture of stamp cores. In particular, the multi-layer impression system provides a negative template that will be transferred to the structure of the impression mold core. For example, for the manufacture of an impression mold core, a multi-layered impression is generally coated with a polymer material, especially a curable polymer material, to form a positive template. A curable polymer can be understood as a polymer, which can be cured by applying heat and/or radiation and/or adding chemicals. In other words, a curable polymer material can be understood as a polymer material, and the polymer material can be toughened or hardened by cross-linking polymer bonds. Examples of cross-linked polymer bonds are induced by heat, radiation or chemical additives.

Therefore, after coating the multi-layer stamp with curable polymer material, the curing process is generally performed to stabilize the polymer material. After stabilization, The positive template is separated from the multilayer impression. The positive template can be attached to the mold core support structure. Generally speaking, the mold core support structure is a mechanical structure, such as a plate or a roller, which is assembled to support the positive template. The positive template includes an embossing structure to be embossed.

In view of the embodiments described herein, it will be understood that, compared to the most recent techniques, improved embodiments of the method for manufacturing a multilayer stamp and improved multilayer stamps can be proposed. In particular, the several embodiments of the present disclosure advantageously provide a mixing method, that is, a material removal process and a material addition process. Therefore, the structure of the multi-layer stamp can be advantageously manufactured with higher accuracy. In particular, compared to the features obtained by traditional methods, the hybrid manufacturing method as described herein advantageously provides the possibility of producing features of an imprint with higher resolution, better uniformity and better accuracy. More particularly, especially at several depths, it is possible to provide a multi-layered impression with improved characteristic sidewall angle uniformity and depth uniformity. Therefore, the improved multi-layer mold core can be manufactured by using the multi-layered impression made according to the method described herein, especially the improved multi-layer mold core used for imprinting by imprint lithography technology.

In summary, although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Those who have ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to those defined by the attached patent application scope.

10: substrate

10A: Main surface

11: First height

12: second height

13: third height

21: The first set of features

22: The second set of features

22S: side wall

22T: top wall

D: depth

H: height

Claims (12)

A method for manufacturing a multi-layered stamp, the method comprising: providing a substrate (10); coating the substrate (10) to have a first layer (51) of a first photoresist material, the second One layer has a first main surface (51A), the first main surface provides a first height (11); a first set of features (21) are generated on the first layer (51) of the first photoresist material Wherein the first set of features (21) provide a second height (12) lower than the first height (11), wherein the first set of features (21) are generated in the first photoresist material The layer (51) includes removing the material of the first layer (51); and generating a second set of features (22) on the first main surface of the first layer, the second set of features (22) providing A third height (13) higher than the first height (11), wherein generating the second set of features (22) on the first layer (51) of the first photoresist material includes adding material to the first layer (51) On the first main surface (51A) of a layer (51). According to the method described in claim 1, wherein generating the first set of features (21) further includes providing a first mask above the first layer, and patterning the first layer. The method according to claim 2, wherein patterning the first layer includes exposing the first layer to light through the first mask. The method according to any one of items 1 to 3 in the scope of the patent application, wherein generating the second set of features (22) further includes coating the first layer (51) to have a second photoresist material Two layers (52), and patterning the second layer, the second photoresist material It has a photosensitivity opposite to that of the first photoresist material. The method according to claim 4, wherein patterning the second layer includes exposing the second layer (52) to light through a second mask (32). The method described in item 5 of the scope of patent application further includes supplying a photoresist developer on a surface of the second layer. The method according to any one of items 1 to 3 in the scope of the patent application, wherein the first photoresist material is a positive photoresist. The method described in item 4 of the scope of patent application, wherein the first photoresist material is a positive photoresist. The method described in item 5 of the scope of patent application, wherein the first photoresist material is a positive photoresist. The method described in item 4 of the scope of patent application, wherein the second photoresist material is a negative photoresist. A multi-layered impression (100) is produced by the method as described in any one of items 1 to 10 in the scope of the patent application. For example, the use of the multi-layered impression in the 11th item of the scope of patent application is used to manufacture an impression mold core.

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