TWI660895B - Wafer-transferring pod - Google Patents
Wafer-transferring pod Download PDFInfo
- Publication number
- TWI660895B TWI660895B TW107104082A TW107104082A TWI660895B TW I660895 B TWI660895 B TW I660895B TW 107104082 A TW107104082 A TW 107104082A TW 107104082 A TW107104082 A TW 107104082A TW I660895 B TWI660895 B TW I660895B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer transfer
- transfer box
- box
- wafer
- heating module
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 74
- 239000003344 environmental pollutant Substances 0.000 description 21
- 231100000719 pollutant Toxicity 0.000 description 21
- 239000000356 contaminant Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
一種晶圓傳送盒,包括盒體與至少一個加熱模組。加熱模組設置於盒體上。A wafer transfer box includes a box body and at least one heating module. The heating module is arranged on the box body.
Description
本發明是有關於一種傳送盒,且特別是有關於一種晶圓傳送盒。The present invention relates to a transfer box, and in particular to a wafer transfer box.
隨著半導體線寬越來越微小化,由於氣體汙染物(Airborne Molecular Contamination,AMC)對晶圓具有危害性,因此對於晶圓傳送盒內的氣體汙染物的防治越來越重視。一般業界通常會使用惰性氣體(如,N 2)或乾淨氣體(clean dry air,CDA)填充於晶圓傳送盒中,且利用抽氣與充氣進行換氣,以減少晶圓傳送盒內的氣體汙染物,而達到防治目的。 As semiconductor line widths become smaller and smaller, as airborne molecular contamination (AMC) is harmful to wafers, more and more attention is paid to the prevention of gaseous pollutants in wafer transfer boxes. Generally, the industry generally uses inert gas (such as N 2 ) or clean dry air (CDA) to fill the wafer transfer box, and uses air extraction and inflation to exchange air to reduce the gas in the wafer transfer box. Pollutants to achieve prevention and control purposes.
然而,晶圓傳送盒內的氣體汙染物有時會以凝結態附著在晶圓傳送盒的內壁或晶圓上,而對晶圓造成危害,進而造成晶圓良率降低。However, the gas contamination in the wafer transfer box sometimes adheres to the inner wall of the wafer transfer box or on the wafer in a condensed state, which causes harm to the wafer and thus reduces the wafer yield.
本發明提供一種晶圓傳送盒,其有助於移除盒內的凝結態汙染物。The present invention provides a wafer transfer cassette that facilitates the removal of condensed contaminants within the cassette.
本發明提出一種晶圓傳送盒,包括盒體與至少一個加熱模組。加熱模組設置於盒體上。The invention provides a wafer transfer box, which includes a box body and at least one heating module. The heating module is arranged on the box body.
依照本發明的一實施例所述,在上述晶圓傳送盒中,盒體的材料例如是樹脂。According to an embodiment of the present invention, in the wafer transfer cassette, a material of the cassette body is, for example, resin.
依照本發明的一實施例所述,在上述晶圓傳送盒中,晶圓傳送盒例如是前開式晶圓傳送盒(Front-Opening Unified Pod,FOUP)或前開式晶圓運輸盒(Front-Opening Shipping Box,FOSB)。According to an embodiment of the present invention, in the wafer transfer box, the wafer transfer box is, for example, a Front-Opening Unified Pod (FOUP) or a Front-Opening Transport Box (Front-Opening Shipping Box, FOSB).
依照本發明的一實施例所述,在上述晶圓傳送盒中,加熱模組例如是加熱線圈、加熱燈管或其組合。According to an embodiment of the present invention, in the wafer transfer box, the heating module is, for example, a heating coil, a heating lamp, or a combination thereof.
依照本發明的一實施例所述,在上述晶圓傳送盒中,加熱模組可設置於盒體的內壁上。According to an embodiment of the present invention, in the wafer transfer box, the heating module may be disposed on an inner wall of the box body.
依照本發明的一實施例所述,在上述晶圓傳送盒中,加熱模組可設置於盒體的外壁上。According to an embodiment of the present invention, in the wafer transfer box, the heating module may be disposed on an outer wall of the box body.
依照本發明的一實施例所述,在上述晶圓傳送盒中,加熱模組可固定於盒體上。According to an embodiment of the present invention, in the wafer transfer box, the heating module may be fixed on the box body.
依照本發明的一實施例所述,在上述晶圓傳送盒中,加熱模組固定於盒體上的方式例如是鎖固或黏固。According to an embodiment of the present invention, in the wafer transfer box described above, the heating module is fixed on the box body by, for example, locking or gluing.
基於上述,在本發明所提出的晶圓傳送盒中,可藉由加熱模組將晶圓傳送盒內的凝結態汙染物變成氣態汙染物,再利用充氣與抽氣的製程將氣態汙染物從晶圓傳送盒中排出,因此有助於移除晶圓傳送盒內的凝結態汙染物。藉此,可防止晶圓傳送盒內的汙染物對晶圓造成危害,進而可提升晶圓良率。Based on the above, in the wafer transfer box proposed by the present invention, the condensed pollutants in the wafer transfer box can be changed to gaseous pollutants by the heating module, and then the gaseous pollutants are removed from the gasification and extraction processes. It is discharged from the wafer transfer cassette and therefore helps to remove condensed contaminants from the wafer transfer cassette. This can prevent the pollutants in the wafer transfer box from causing harm to the wafer, and thus can improve the wafer yield.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
圖1為本發明一實施例的晶圓傳送盒的示意圖。FIG. 1 is a schematic diagram of a wafer transfer cassette according to an embodiment of the present invention.
請參照圖1,晶圓傳送盒100包括盒體102與至少一個加熱模組104。晶圓傳送盒100適用於晶圓的儲存及傳輸。晶圓傳送盒100例如是前開式晶圓傳送盒(FOUP)或前開式晶圓運輸盒(FOSB)。盒體102的材料例如是樹脂。Referring to FIG. 1, the wafer transfer box 100 includes a box body 102 and at least one heating module 104. The wafer transfer box 100 is suitable for storing and transferring wafers. The wafer transfer box 100 is, for example, a front-open wafer transfer box (FOUP) or a front-open wafer transfer box (FOSB). The material of the case body 102 is, for example, resin.
加熱模組104設置於盒體102上。加熱模組104可設置於盒體102的內壁上或外壁上。在此實施例中,加熱模組104是以設置於盒體102的內壁上為例來進行說明,但本發並不以此為限。在另一實施例中,加熱模組104亦可設置於盒體102的外壁上。加熱模組104可固定於盒體102上。加熱模組104固定於盒體102上的方式例如是鎖固或黏固。加熱模組104例如是加熱線圈、加熱燈管或其組合。The heating module 104 is disposed on the box body 102. The heating module 104 may be disposed on an inner wall or an outer wall of the box body 102. In this embodiment, the heating module 104 is described as an example provided on the inner wall of the box body 102, but the present invention is not limited thereto. In another embodiment, the heating module 104 can also be disposed on the outer wall of the box body 102. The heating module 104 can be fixed on the box body 102. The heating module 104 is fixed on the box body 102 by, for example, locking or fixing. The heating module 104 is, for example, a heating coil, a heating lamp, or a combination thereof.
此外,圖1中的加熱模組104的數量僅為舉例說明,本發明並不以此為限,只要加熱模組104的數量為至少一個即屬於本發明所主張的範圍。In addition, the number of the heating modules 104 in FIG. 1 is merely an example, and the present invention is not limited thereto. As long as the number of the heating modules 104 is at least one, it belongs to the claimed scope of the present invention.
基於上述實施例可知,在晶圓傳送盒100中,可藉由加熱模組104對晶圓傳送盒100進行加熱,以提高晶圓傳送盒100內部的溫度。藉此,可將晶圓傳送盒100內的凝結態汙染物汽化成氣態汙染物,再利用充氣與抽氣的製程將氣態汙染物從晶圓傳送盒100中排出,因此有助於移除晶圓傳送盒100內的凝結態汙染物。藉此,可防止晶圓傳送盒100內的汙染物對晶圓造成危害,進而可提升晶圓良率。Based on the above embodiments, it can be known that in the wafer transfer box 100, the wafer transfer box 100 can be heated by the heating module 104 to increase the temperature inside the wafer transfer box 100. In this way, the condensed pollutants in the wafer transfer box 100 can be vaporized into gaseous pollutants, and the gaseous pollutants can be discharged from the wafer transfer box 100 by the process of inflation and pumping, thereby helping to remove the crystals. Condensed contaminants in the circular transfer box 100. Thereby, it is possible to prevent the pollutants in the wafer transfer box 100 from causing harm to the wafer, thereby improving the wafer yield.
圖2為本發明另一實施例的晶圓傳送盒的示意圖。FIG. 2 is a schematic diagram of a wafer transfer cassette according to another embodiment of the present invention.
請同時參照圖1與圖2,圖2的晶圓傳送盒200與圖1的晶圓傳送盒100的差異如下。在晶圓傳送盒200中,加熱模組104設置於盒體102的外壁上。此外,晶圓傳送盒200與晶圓傳送盒100中的相同的構件以相同的符號表示,且於上述實施例中已詳盡地進行說明,於此不再重複說明。Please refer to FIG. 1 and FIG. 2 at the same time. The difference between the wafer transfer box 200 in FIG. 2 and the wafer transfer box 100 in FIG. 1 is as follows. In the wafer transfer box 200, a heating module 104 is disposed on an outer wall of the box body 102. In addition, the same components in the wafer transfer box 200 and the wafer transfer box 100 are denoted by the same symbols, and have been described in detail in the above embodiment, and will not be repeated here.
基於上述實施例可知,在晶圓傳送盒200中,可藉由加熱模組104將晶圓傳送盒200內的凝結態汙染物變成氣態汙染物,再利用充氣與抽氣的製程將氣態汙染物從晶圓傳送盒200中排出,因此有助於移除晶圓傳送盒200內的凝結態汙染物。藉此,可防止晶圓傳送盒200內的汙染物對晶圓造成危害,進而可提升晶圓良率。Based on the above embodiments, it can be known that in the wafer transfer box 200, the condensed pollutants in the wafer transfer box 200 can be changed into gaseous pollutants by the heating module 104, and then the gaseous pollutants are processed by the process of inflation and extraction It is discharged from the wafer transfer cassette 200 and thus helps to remove condensed contaminants within the wafer transfer cassette 200. Thereby, the pollutants in the wafer transfer box 200 can be prevented from damaging the wafer, and the wafer yield can be improved.
圖3為移除圖1的晶圓傳送盒內的汙染物的操作示意圖。FIG. 3 is a schematic diagram of removing contaminants from the wafer transfer cassette of FIG. 1.
請參照圖3,在移除晶圓傳送盒100內的氣態汙染物的操作中,充氣管路300提供如惰性氣體(如,氮氣)、乾淨氣體(CDA)或超乾淨氣體(extra clean dry air,XCDA)等氣體302至盒體102中,再利用抽氣管路304將氣體302抽出,因此可藉由氣體302將晶圓傳送盒100內的汙染物帶出,而移除晶圓傳送盒100內的汙染物。此外,在上述充氣與抽氣的製程中,利用加熱模組104對晶圓傳送盒100進行加熱,以將晶圓傳送盒100內的如酸、鹼或鹽的凝結態汙染物汽化成氣態汙染物,因此可利用充氣與抽氣的製程將氣態汙染物從晶圓傳送盒100中排出。藉此,可防止晶圓傳送盒100內的汙染物對晶圓W造成危害,進而可提升晶圓良率。Referring to FIG. 3, in the operation of removing gaseous pollutants in the wafer transfer box 100, the inflation line 300 provides, for example, an inert gas (e.g., nitrogen), clean gas (CDA), or extra clean dry air , XCDA) and other gases 302 into the box body 102, and then the exhaust pipe 304 is used to extract the gas 302. Therefore, the gas 302 can be used to remove the pollutants in the wafer transfer box 100, and the wafer transfer box 100 can be removed. Contaminants inside. In addition, in the above-mentioned process of inflating and extracting, the heating module 104 is used to heat the wafer transfer box 100 to vaporize condensed pollutants such as acid, alkali or salt in the wafer transfer box 100 into gaseous pollution. Therefore, gaseous pollutants can be discharged from the wafer transfer box 100 by a process of inflation and extraction. Thereby, the contaminants in the wafer transfer box 100 can be prevented from causing harm to the wafer W, and the wafer yield can be improved.
綜上所述,在上述實施例的晶圓傳送盒中,由於加熱模組可將晶圓傳送盒內的凝結態汙染物變成氣態汙染物,因此有助於移除晶圓傳送盒內的凝結態汙染物,進而可提升晶圓良率。In summary, in the wafer transfer box of the above embodiment, since the heating module can change the condensed pollutants in the wafer transfer box into gaseous pollutants, it is helpful to remove the condensation in the wafer transfer box. Pollutants, which can improve wafer yield.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
100、200‧‧‧晶圓傳送盒100, 200‧‧‧ wafer transfer boxes
102‧‧‧盒體102‧‧‧Box
104‧‧‧加熱模組104‧‧‧Heating Module
300‧‧‧充氣管路300‧‧‧ inflatable tube
302‧‧‧氣體302‧‧‧gas
304‧‧‧抽氣管路304‧‧‧Exhaust line
W‧‧‧晶圓W‧‧‧ Wafer
圖1為本發明一實施例的晶圓傳送盒的示意圖。 圖2為本發明另一實施例的晶圓傳送盒的示意圖。 圖3為移除圖1的晶圓傳送盒內的汙染物的操作示意圖。FIG. 1 is a schematic diagram of a wafer transfer cassette according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a wafer transfer cassette according to another embodiment of the present invention. FIG. 3 is a schematic diagram of removing contaminants from the wafer transfer cassette of FIG. 1.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107104082A TWI660895B (en) | 2018-02-06 | 2018-02-06 | Wafer-transferring pod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107104082A TWI660895B (en) | 2018-02-06 | 2018-02-06 | Wafer-transferring pod |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI660895B true TWI660895B (en) | 2019-06-01 |
| TW201934439A TW201934439A (en) | 2019-09-01 |
Family
ID=67764030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107104082A TWI660895B (en) | 2018-02-06 | 2018-02-06 | Wafer-transferring pod |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI660895B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201802006A (en) * | 2016-07-06 | 2018-01-16 | 披考安泰拉有限公司 | Wafer storage container |
-
2018
- 2018-02-06 TW TW107104082A patent/TWI660895B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201802006A (en) * | 2016-07-06 | 2018-01-16 | 披考安泰拉有限公司 | Wafer storage container |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201934439A (en) | 2019-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10121646B2 (en) | Substrate processing apparatus and substrate processing method | |
| US9223220B2 (en) | Photo resist baking in lithography process | |
| KR102573292B1 (en) | substrate cleaning method, substrate cleaning apparatus and manufacturing method of semiconductor device using the same | |
| JP2006261456A (en) | Atmospheric transfer chamber, post-processing transfer method, program, and storage medium | |
| CN107210245B (en) | Substrate processing apparatus | |
| KR101643455B1 (en) | Substrate processing method and apparatus therefor | |
| TWI415177B (en) | A substrate processing method and a substrate processing apparatus | |
| KR20160026302A (en) | Substrate processing apparatus, apparatus for manufacturing integrated circuit device, substrate processing method and method of manufacturing integrated circuit device | |
| CN108231555B (en) | Etching method and substrate processing system | |
| TWI660895B (en) | Wafer-transferring pod | |
| CN110197807A (en) | Chip feeder | |
| JP2011061149A (en) | Common transport device, and processing system using the same | |
| KR20170056967A (en) | Substrate processing apparatus | |
| KR20150059704A (en) | equipment front end module | |
| KR100708973B1 (en) | Apparatus and method for manufacturing a semiconductor using a load lock chamber having a UV lamp module | |
| JP2010161157A (en) | Substrate storing method and storage medium | |
| US6273962B1 (en) | Method to reduce the particles in load-lock chamber | |
| KR20170037616A (en) | Method and station for treatment of a plastic transport box for conveyance and atmospheric storage of substrates | |
| US20110097981A1 (en) | Semiconductor manufacturing apparatus | |
| CN111326403A (en) | Wafer pretreatment method and semiconductor device | |
| JP2013187449A (en) | Etching device | |
| KR20080060781A (en) | Dry etching apparatus and method | |
| US20110253174A1 (en) | Method for decontaminating semiconductor wafers | |
| CN108666239A (en) | Substrate board treatment, substrate processing method using same and storage medium | |
| Maquin et al. | Reduction of airborne molecular contamination on 300 mm front opening unified pod (FOUP) and wafers surface by vacuum technology |