TWI646129B - Polymer - Google Patents
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- TWI646129B TWI646129B TW105142916A TW105142916A TWI646129B TW I646129 B TWI646129 B TW I646129B TW 105142916 A TW105142916 A TW 105142916A TW 105142916 A TW105142916 A TW 105142916A TW I646129 B TWI646129 B TW I646129B
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- 229920000642 polymer Polymers 0.000 title claims abstract description 32
- 125000003118 aryl group Chemical group 0.000 claims abstract description 20
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims abstract description 11
- 229910020366 ClO 4 Inorganic materials 0.000 claims abstract description 5
- 125000000171 (C1-C6) haloalkyl group Chemical group 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- -1 indolylene Chemical group 0.000 claims description 6
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000005567 fluorenylene group Chemical group 0.000 claims description 5
- 125000004653 anthracenylene group Chemical group 0.000 claims description 4
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 claims description 4
- 125000004957 naphthylene group Chemical group 0.000 claims description 4
- 125000005560 phenanthrenylene group Chemical group 0.000 claims description 4
- 125000005556 thienylene group Chemical group 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 claims description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 description 17
- 150000001875 compounds Chemical class 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229920000412 polyarylene Polymers 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 7
- FKNQCJSGGFJEIZ-UHFFFAOYSA-N 4-methylpyridine Chemical compound CC1=CC=NC=C1 FKNQCJSGGFJEIZ-UHFFFAOYSA-N 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- 238000005481 NMR spectroscopy Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004895 liquid chromatography mass spectrometry Methods 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012038 nucleophile Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- JXTGICXCHWMCPM-UHFFFAOYSA-N (methylsulfinyl)benzene Chemical compound CS(=O)C1=CC=CC=C1 JXTGICXCHWMCPM-UHFFFAOYSA-N 0.000 description 1
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Natural products C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 1
- BPMPBQHUHSDKAM-UHFFFAOYSA-N CC12C(C=CC=C1)(C1=CC=CC=C1)S2 Chemical compound CC12C(C=CC=C1)(C1=CC=CC=C1)S2 BPMPBQHUHSDKAM-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006900 dealkylation reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000003454 indenyl group Chemical group C1(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012434 nucleophilic reagent Substances 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 229940032330 sulfuric acid Drugs 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
本揭露提供一種聚合物。該聚合物,具有一如式(I)或式(II)所示結構的重複單元
Description
本揭露關於一種聚合物,特別是一種聚芳硫醚或其鹽類。 The present disclosure relates to a polymer, particularly a polyarylene sulfide or a salt thereof.
聚芳硫醚是具有出色的物理特性,例如耐熱性、耐化學性、耐火性、及電絕緣特性,因此廣泛用於電腦附件、汽車附件、與腐蝕性化學物質接觸的零件的塗料、以及具有耐化學性的工業纖維。 Polyarylene sulfides are excellent in physical properties such as heat resistance, chemical resistance, fire resistance, and electrical insulation properties, and are therefore widely used in computer accessories, automotive accessories, coatings for parts in contact with corrosive chemicals, and Chemically resistant industrial fibers.
然而,由於傳統聚芳硫醚的製備方法主要係以鹵製程為主,除了低的聚芳硫醚樹脂產率外,還會產生無法回收的含鹵副產物,造成環境汙染。此外,傳統具有至少兩種重複單元的聚芳硫醚其重複單元普遍為無序排列(arranged in a random fashion),使得聚芳硫醚之耐熱性、耐化學性、耐火性、及電絕緣特性無法進一步提昇下降。 However, since the preparation method of the conventional polyarylene sulfide is mainly based on a halogen process, in addition to the low polyarylene sulfide resin yield, a halogen-containing by-product which cannot be recovered is generated, which causes environmental pollution. In addition, polyarylene sulfides having conventionally having at least two repeating units have a repeating unit generally arranged in a random fashion, so that heat resistance, chemical resistance, fire resistance, and electrical insulating properties of the polyarylene sulfide are obtained. Can't further improve the decline.
根據本揭露實施例,本揭露提供一種聚合物,可具有一如式(I)或式(II)所示結構的重複單元:
,其中Ar1及Ar2係獨立為取代或未取代二價芳香基;Y-可為R2SO3 -或ClO4 -;R1可為C1-6烷基;Ar1與Ar2不相同;以及,R2可為C1-6烷基、取代或未取代芳香環、或C1-6鹵烷基。 Wherein Ar 1 and Ar 2 are independently substituted or unsubstituted divalent aromatic groups; Y - may be R 2 SO 3 - or ClO 4 - ; R 1 may be C 1-6 alkyl; Ar 1 and Ar 2 are not The same; and, R 2 may be a C 1-6 alkyl group, a substituted or unsubstituted aromatic ring, or a C 1-6 haloalkyl group.
本揭露實施例提供一種聚合物,例如聚芳硫醚或其鹽類。根據本揭露實施例,本揭露述之聚合物其主鏈結構由不同之芳香基以交替排列方式構成,因此具有較高之結晶性,使得該聚合物具有較高之熔點(例如約大於或等於330℃),並進一步提昇耐熱性、耐化學性、耐火性、及電絕緣特性。 The disclosed embodiments provide a polymer, such as a polyarylene sulfide or a salt thereof. According to an embodiment of the present disclosure, the polymer of the present disclosure has a main chain structure composed of different aromatic groups in an alternating arrangement, and thus has a higher crystallinity such that the polymer has a higher melting point (for example, greater than or equal to 330 ° C), and further improve heat resistance, chemical resistance, fire resistance, and electrical insulation properties.
根據本揭露實施例,本揭露所述之聚合物,可具有一如式(I)或式(II)所示結構的重複單元:
,其中Ar1及Ar2係獨立為取代或未取代二價芳香基;Y-可為R2SO3 -或ClO4 -;R1可為C1-6烷基;Ar1與Ar2不相同;以及,R2可為C1-6烷基、取代或未取代芳香環、或C1-6鹵烷基。在此,本揭露所述取代之二價芳香基係指該二價芳香基之至少一者碳上的氫被C1-6烷基所取代。根據本揭露實施例,該取代之芳香環係指該芳香 環至少一者碳上的氫被C1-6烷基所取代。 Wherein Ar 1 and Ar 2 are independently substituted or unsubstituted divalent aromatic groups; Y - may be R 2 SO 3 - or ClO 4 - ; R 1 may be C 1-6 alkyl; Ar 1 and Ar 2 are not The same; and, R 2 may be a C 1-6 alkyl group, a substituted or unsubstituted aromatic ring, or a C 1-6 haloalkyl group. Herein, the substituted divalent aromatic group of the present disclosure means that the hydrogen on at least one of the divalent aromatic groups is substituted by a C 1-6 alkyl group. According to an embodiment of the present disclosure, the substituted aromatic ring means that the hydrogen on at least one of the aromatic rings is replaced by a C 1-6 alkyl group.
根據本揭露實施例,Ar1及Ar2係獨立為取代或未取代伸苯基(phenylene group)、聯苯伸基(biphenylene group)、伸萘基(naphthylene group)、伸噻吩基(thienylene group)、伸吲哚基(indolylene)、伸菲基(phenanthrenylene)、伸茚基(indenylene)、伸蒽基(anthracenylene)、或伸芴基(fluorenylene),其中取代之伸苯基(phenylene group)、聯苯伸基(biphenylene group)、伸萘基(naphthylene group)、伸噻吩基(thienylene group)、伸吲哚基(indolylene)、伸菲基(phenanthrenylene)、伸茚基(indenylene)、伸蒽基(anthracenylene)、或伸芴基(fluorenylene)係指該等二價芳香基團之至少一者碳上的氫被C1-6烷基所取代。 According to an embodiment of the present disclosure, Ar 1 and Ar 2 are independently a substituted or unsubstituted phenylene group, a biphenylene group, a naphthylene group, a thienylene group. , indolylene, phenanthrenylene, indenylene, anthracenylene, or fluorenylene, in which phenylene group, phenylene group Biphenylene group, naphthylene group, thienylene group, indolylene, phenanthrenylene, indenylene, exfoliation Anthracenylene) or fluorenylene means that hydrogen on at least one of the divalent aromatic groups is replaced by a C 1-6 alkyl group.
根據本揭露實施例,C1-6烷基可為直鏈或分支(linear or branched)鏈的烷基。舉例來說,例如R1可為甲基(methyl)、乙基(ethyl)、丙基(propyl)、異丙基(isopropyl)、正丁基(n-butyl)、叔丁基(t-butyl)、仲丁基(sec-butyl)、異丁基(isobutyl)、戊基(pentyl)、或己基(hexyl)。 According to an embodiment of the present disclosure, the C 1-6 alkyl group may be a linear or branched chain alkyl group. For example, for example, R 1 may be methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl. ), sec-butyl, isobutyl, pentyl, or hexyl.
根據本揭露實施例,Ar1及Ar2可獨立為 ,x係0、1、或2;R3可獨立為氫、或C1-6烷基。舉例來說,R3可獨立為氫、甲基(methyl)、乙基(ethyl)、丙基(propyl)、異丙基(isopropyl)、正丁基(n-butyl)、叔丁基(t-butyl)、仲丁基(sec-butyl)、異丁基(isobutyl)、戊基(pentyl)、或己基(hexyl)。 According to an embodiment of the present disclosure, Ar 1 and Ar 2 may be independently , x is 0, 1, or 2; R 3 may independently be hydrogen or a C 1-6 alkyl group. For example, R 3 may independently be hydrogen, methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl (t -butyl), sec-butyl, isobutyl, pentyl, or hexyl.
根據本揭露實施例,該具有如式(I)所示結構的重複單 元可為,而該具有如式(II) 所示結構的重複單元可為,其中R1、R3、及Y-之定義與前述相同。 According to an embodiment of the present disclosure, the repeating unit having the structure shown in the formula (I) may be And the repeating unit having the structure represented by the formula (II) may be Wherein R 1 , R 3 , and Y - are as defined above.
根據本揭露實施例,本揭露所述之聚合物的聚合程度可視需求調整,例如可具有約600至120,000數目平均分子量或約10,000至30,000的數目平均分子量。 In accordance with embodiments of the present disclosure, the degree of polymerization of the polymers described herein may be adjusted as desired, for example, may have a number average molecular weight of from about 600 to 120,000 or a number average molecular weight of from about 10,000 to 30,000.
根據本揭露實施例,本揭露所述之聚合物的製備方法,包含將具有式(III)所示結構的化合物與酸反應,得到具有式(I)所示結構的聚合物:
其中,Ar1可為取代或未取代二價芳香基,例如取代或未取代之伸苯基(phenylene group)、聯苯伸基(biphenylene group)、伸萘基(naphthylene group)、伸噻吩基(thienylene group)、伸吲哚基(indolylene)、伸菲基(phenanthrenylene)、伸茚基(indenylene)、伸蒽基(anthracenylene)、或伸芴基(fluorenylene);Ar3可為取代或未取代芳香基,例如取代或未取代之苯基(phenyl group)、聯苯基(biphenyl group)、萘基(naphthyl group)、噻吩基(thienyl group)、吲哚基(indolyl)、菲基(phenanthrenyl)、茚基(indenyl)、蒽基(anthracenyl)、或芴基(fluorenylene),其中取代之芳香基係指芳香基團之至少一者碳上的氫被C1-6烷基所取代。Ar1係與Ar3由不同化合物所衍生,例如Ar1係伸苯基(phenylene group)時,Ar3係不為苯基(phenyl)。上述之酸可例如為硫酸(sulfuric acid)、甲磺酸(methanesulfonic acid)、苯磺酸(benzenesulfonic acid)、对甲苯磺酸(p-toluenesulfonic acid)、或三氟甲磺酸(trifluoromethanesulfonic acid)。上述的酸除了與具有式(III)所示結構的化合物反應外,亦可添加過量以作為溶劑。 Wherein Ar 1 may be a substituted or unsubstituted divalent aromatic group, such as a substituted or unsubstituted phenylene group, a biphenylene group, a naphthylene group, a thienyl group ( Thienylene group), indolylene, phenanthrenylene, indenylene, anthracenylene, or fluorenylene; Ar 3 may be substituted or unsubstituted aromatic a group, for example, a substituted or unsubstituted phenyl group, a biphenyl group, a naphthyl group, a thienyl group, an indolyl group, a phenanthrenyl group, Indenyl, anthracenyl, or fluorenylene, wherein the substituted aryl group means that at least one of the carbons of the aromatic group is replaced by a C 1-6 alkyl group. When Ar 1 and Ar 3 are derived from different compounds, for example, when Ar 1 is a phenylene group, Ar 3 is not a phenyl group. The above acid may be, for example, sulfuric acid, methanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, or trifluoromethanesulfonic acid. In addition to the reaction of the above-mentioned acid with a compound having a structure represented by the formula (III), an excess may be added as a solvent.
此外,所得之具有式(I)所示結構的聚合物,可進一步使用其他陰離子(例如:CH3SO3 -)置換具有式(I)所示結構的聚合物之陰離子(Y-)基團,得到其他具有不同陰離子的聚合物。 Further, the obtained polymer having the structure represented by the formula (I) may further replace the anion (Y - ) group of the polymer having the structure represented by the formula (I) with another anion (for example, CH 3 SO 3 - ). To obtain other polymers with different anions.
再者,具有式(I)所示結構的聚合物,可再利用親核試劑進行去烷基化(dealkylation)反應,得到具有式(II)所示結構的聚合物。根據本揭露實施例,該親核試劑(nucleophile)可為金屬鹵化物、金屬氫氧化物、醇、胺(例如二級胺、或三級胺)、或硫醇。舉例來說,該親核試劑可為氯化鈉、氯化鉀、氯化鋁、或4-甲基吡啶。 Further, the polymer having the structure represented by the formula (I) can be subjected to a dealkylation reaction using a nucleophilic reagent to obtain a polymer having a structure represented by the formula (II). According to embodiments of the present disclosure, the nucleophile may be a metal halide, a metal hydroxide, an alcohol, an amine (eg, a secondary amine, or a tertiary amine), or a thiol. For example, the nucleophile can be sodium chloride, potassium chloride, aluminum chloride, or 4-methylpyridine.
為了讓本揭露之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉數實施例及比較實施例,作詳細說明如下: The above and other objects, features and advantages of the present invention will become more apparent and understood.
實施例1: Example 1:
將0.7g之甲基苯基亞碸(methyl phenyl sulfoxide)及1g之甲基聯苯基硫醚(methyl biphenyl sulfide)在氮氣下加入一反應瓶中,並降溫至0℃。接著,緩慢加入10ml之甲基磺酸(methanesulfonic
acid)於反應瓶中,並攪拌約半小時。接著,回復室溫並持續攪拌約20小時。接著,將所得之產物倒入40ml之過氯酸中,並攪拌約1小時,並以50ml之二氯甲烷與100ml之去離子水進行萃取三次。取有機層抽乾及除水後,得到化合物(1),產率約92%。上述反應之反應式如下所示:
利用核磁共振光譜分析化合物(1),所得之光譜資訊如下:1H NMR(400MHz,ppm,CDCl3):2.48(-CH3,s),3.67(sulfonium-CH3,s),7.40-7.94(aromatic H,13H,m)。利用液相層析串聯式質譜儀(liquid chromatography-mass spectrometry、LC-MS)分析化合物(1),測得m/z=323(不含CH3SO3 -陰離子)。 The compound (1) was analyzed by nuclear magnetic resonance spectroscopy, and the obtained spectral information was as follows: 1 H NMR (400 MHz, ppm, CDCl 3 ): 2.48 (-CH 3 , s), 3.67 (sulfonium-CH 3 , s), 7.40-7.94 (aromatic H, 13H, m). The compound (1) was analyzed by liquid chromatography-mass spectrometry (LC-MS), and m/z = 323 (excluding CH 3 SO 3 - anion) was measured.
接著,將1.9g之化合物(1)及30ml之冰醋酸在氮氣下置於一反應瓶中。攪拌數分鐘後,緩慢加入2.02ml之雙氧水。反應約90分鐘後,將所得產物用50ml二氯甲烷與100ml去離子水進行萃取三次。取有機層抽乾及除水後,得到化合物(2)(橘黃色)。接著,將10ml 4-甲基吡啶(4-methylpyridine)與化合物(2)置於在氮氣下一反應瓶中,並攪拌30分鐘。在加熱並迴流約20分鐘後,得到化合物(3)。上述反應之反應式如下所示:
利用核磁共振光譜分析化合物(3),所得之光譜資訊如下:1H NMR(400MHz,ppm,CDCl3):2.72(-CH3,s),7.38-7.63(aromatic H,13H,m)。利用液相層析串聯式質譜儀(liquid chromatography-mass spectrometry、LC-MS)分析化合物(3),測得m/z=325(M+H+),347(M+Na+)和671(2*M+Na+)三組訊號(M為分子量)。 The compound (3) was analyzed by nuclear magnetic resonance spectroscopy, and the obtained spectral information was as follows: 1 H NMR (400 MHz, ppm, CDCl 3 ): 2.72 (-CH 3 , s), 7.38 - 7.63 (aromatic H, 13H, m). The compound (3) was analyzed by liquid chromatography-mass spectrometry (LC-MS), and m/z = 325 (M+H + ), 347 (M+Na + ) and 671 (measured). 2*M+Na + ) three sets of signals (M is the molecular weight).
接著,將1g之化合物(3)在氮氣下置於一反應瓶中,並降溫至0℃。接著,緩慢加入15ml之三氟甲基磺酸(trifluoromethanesulfonic acid),並攪拌約2小時。接著,回溫至約18℃後,將產物倒入0℃去離子水中,觀察到白色沉澱物析出。接著,收集白色沉澱物並用去離子水重複清洗白色沉澱物,直到白色沉澱物呈現中性。接著,對所得白色沉澱物進行真空乾燥約6小時後,得到聚合物(1),產率100%。接著,將1g之聚合物(1)在氮氣下置於一反應瓶,並緩慢加入10ml 4-甲基吡啶(4-methylpyridine)。在室溫下反應約30分鐘後,加熱反應瓶至150℃並進行迴流。持續攪拌5小時後,將反應冷卻置室溫,並將反應溶液倒入含有10%鹽酸(HCl)之200ml的甲醇溶液中,觀察到白色沉澱物析出。接著,收集白色沉澱物,得聚合物(2),產率98%。上述反應之反應式如下所示:
經量測後可得知,聚合物(1)及聚合物(2)的數目平均分子量約為17,000至19,000。 It has been found by measurement that the polymer (1) and the polymer (2) have a number average molecular weight of about 17,000 to 19,000.
使用示差掃描量熱儀(differential scanning calorimetry、DSC)量測所得聚合物(2),得知其熔融溫度(Tm)達約330℃以及其降溫再結晶溫度(Tcc)達約251℃。接著,以紅外線光譜儀(FT-IR)量測聚合物(2),結果如下:IR(cm-1):3023,1593,1472,1388,1090,1006,808。 The obtained polymer (2) was measured by differential scanning calorimetry (DSC), and it was found that its melting temperature (Tm) reached about 330 ° C and its temperature-reducing recrystallization temperature (Tcc) reached about 251 ° C. Next, the polymer (2) was measured by an infrared spectrometer (FT-IR), and the results were as follows: IR (cm -1 ): 3023, 1593, 1472, 1388, 1090, 1006, 808.
本揭露本揭露基於上述,由於本揭露所述聚合物(例如聚芳硫醚或其鹽類)其主鏈結構由不同之芳香基以交替排列方式構成,因此具有結晶性,使得該聚合物具有較高之熔點(例如約大於或等於330℃),並進一步提昇耐熱性、耐化學性、及耐火性。 The present disclosure is based on the above, since the polymer (for example, polyarylene sulfide or a salt thereof) of the present disclosure has a main chain structure composed of different aromatic groups in an alternating arrangement, and thus has crystallinity so that the polymer has Higher melting point (for example, greater than or equal to 330 ° C), and further improve heat resistance, chemical resistance, and fire resistance.
雖然本揭露已以數個實施例揭露如上,然其並非用以限定本揭露,任何本技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作任意之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。 The present disclosure has been disclosed in the above several embodiments, but it is not intended to limit the disclosure, and any one skilled in the art can make any changes and refinements without departing from the spirit and scope of the disclosure. Therefore, the scope of protection of this disclosure is subject to the definition of the scope of the patent application.
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