TWI645639B - Redundant isolating switch control circuit - Google Patents

Abstract

A redundant isolating switch control circuit comprising a working power supply, a power input end, a power output end, at least one field effect transistor, a first transistor and a second transistor, the field effect transistor having a gate a first source connected to the power input end and a drain connected to the power output end, the first transistor and the second transistor and the associated circuit form a current mirror circuit, the redundant isolating switch control circuit further comprising a first An electronic unit and a second electronic unit, the first electronic unit having a first connection end connecting a first base of the first transistor and a second connection connecting a second emitter of the second transistor The second electronic unit has a third connection end connected to a first collector of the first transistor and a fourth connection end connected to the gate.

Description

Redundant isolating switch control circuit

The invention relates to a redundant isolating switch control circuit.

The existing redundant isolating switch control circuit is disclosed in WO 2008/013895 A1 and CN 105450008 A. The redundant isolating switch control circuit disclosed in CN105450008A is simulated, and two redundant isolating switches in different working states are simulated in the simulation process. The control circuit 80, 90 performs circuit simulation, and the circuit is as shown in FIG. 1. The simulation condition is as follows. The redundant isolation switch control circuit 80 is set to a power input terminal power supply (V _IN1 ) of 12 volts (V), and the startup time. For 20 ms, the off time is 20 ms, and the other redundant isolating switch control circuit 90 is set to 12 volts (V) of the power input terminal (V _s2 ) and is fixed in the activated state. In addition, a load 70 is 100 amps, 012 ohms. On the other hand, a first voltage measuring unit (V _G1 ) presented in FIG. 1 is used to measure the gate source of the field effect transistor 81. Voltage (V _GS ), a first current measuring unit (I _O1 ) is used to measure the output current of the redundant isolating switch control circuit 80, and a second current measuring unit (I _O2 ) is used to measure the redundancy The output voltage of the isolation switch control circuit 90, a second voltage measurement unit (V _IN ) is used to measure the voltage of the power input terminal of the redundant isolation switch control circuit 80, and a third voltage measurement unit (V _O ) It is used to measure the terminal voltage of the load 70.

As a result, the circuit simulation result is shown in FIG. 2. As can be seen from FIG. 2, once the voltage of the power input terminal of the redundant isolation switch control circuit 80 drops instantaneously, the field effect transistor 81 included in the redundant isolation switch control circuit 80 fails. When turned off instantly, it will generate a huge reverse current.

If the resistance values of the resistors 82 and 92 included in the redundant isolation switch control circuits 80 and 90 are respectively reduced (this test is to reduce the resistance from 6.8 k ohm to 3 k ohm), the simulation result is as shown in the figure. 3 revealed. As can be seen from Fig. 3, such a modification can speed up the reaction speed of the field effect transistors 81, 91 and avoid the generation of a large reverse current, but this increases the conduction loss of the field effect transistors 81, 91.

The main object of the present invention is to solve the problems that occur in the implementation of conventional circuits.

To achieve the above objective, the present invention provides a redundant isolating switch control circuit including a power input terminal, a power output terminal, a voltage stabilizing unit, at least one field effect transistor, a first transistor, and a second transistor. The voltage stabilizing unit is connected to the power input end and has a working power source. The field effect transistor has a gate, a source connected to the power input end, and a drain connected to the power output end. The first transistor has a first transistor. a first base, a first emitter connected to the power input end, and a first collector connected to the working power source, the second transistor has a second emitter, a second base connected to the working power source, and A second collector connected to the power output, the second base being coupled to the second emitter. Further, the redundant isolating switch control circuit further includes a first electronic unit and a second electronic unit, the first electronic unit having a first connecting end connected to the first base and a connecting the second emitting end a second connecting end, the second electronic unit has a third connecting end connecting the first collector and a fourth connecting end connecting the gate, wherein the first electronic unit is a diode, a One of a resistor and a capacitor, the second electronic unit being one of an integrated circuit component, a diode, and a resistor for activating or deactivating the field effect transistor.

In one embodiment, the redundant isolation switch control circuit includes a plurality of field effect transistors, and the field effect transistors are disposed in parallel, and each of the gates of the field effect transistors are respectively connected to the The fourth connection end of the second electronic unit, each of the sources is respectively connected to the power input end, and each of the drain electrodes is respectively connected to the power output end.

In one embodiment, the redundant isolating switch control circuit has a first resistor disposed between the operating power source and the first collector, and a second resistor disposed between the operating power source and the second base.

Through the foregoing embodiments of the present invention, the redundant isolation switch control circuit of the present invention improves the reaction speed of the field effect transistor and effectively reduces the internal power input end of the redundant isolation switch control circuit. The reverse current generated by the instantaneous drop of the voltage, taking into account the conduction loss of the field effect transistor.

10‧‧‧Redundant isolating switch control circuit

101‧‧‧Working power supply

102‧‧‧Power input

103‧‧‧Power output

11‧‧‧ Field Effect Transistor

111‧‧‧ gate

112‧‧‧ source

113‧‧‧汲polar

12‧‧‧First transistor

121‧‧‧First base

122‧‧‧first emitter

123‧‧‧First episode

13‧‧‧Second transistor

131‧‧‧second emitter

132‧‧‧Second base

133‧‧‧Second episode

14‧‧‧First electronic unit

141‧‧‧First connection

142‧‧‧second connection

15‧‧‧Second electronic unit

151‧‧‧ third connection

152‧‧‧fourth connection

16‧‧‧Stabilizer

17‧‧‧First resistance

18‧‧‧second resistance

20‧‧‧ load

30‧‧‧Redundant isolating switch control circuit

70‧‧‧ load

80‧‧‧Redundant isolating switch control circuit

81‧‧‧ Field Effect Transistor

82‧‧‧resistance

90‧‧‧Redundant isolating switch control circuit

91‧‧‧ Field Effect Transistor

92‧‧‧resistance

V _IN1 ‧‧‧Power input power supply

V _s2 ‧‧‧Power input power supply

V _G1 ‧‧‧First voltage measuring unit

I _O1 ‧‧‧First current measuring unit

I _O2 ‧‧‧Second current measuring unit

V _IN ‧‧‧second voltage measuring unit

V _O ‧‧‧ third voltage measuring unit

Figure 1. Schematic diagram of a conventional redundant isolation switch control circuit.

Figure 2 is a schematic diagram of the analog waveform of the conventional redundant isolating switch control circuit (1).

Figure 3 is a schematic diagram of the analog waveform of the conventional redundant isolation switch control circuit (2).

4 is a circuit diagram of a redundant isolation switch control circuit of the present invention.

Fig. 5 is a circuit diagram showing the first embodiment of the redundant isolation switch control circuit of the present invention.

Figure 6 is a schematic diagram showing the analog waveform of the first embodiment of the redundant isolation switch control circuit of the present invention.

Figure 7 is a circuit diagram showing a second embodiment of the redundant isolation switch control circuit of the present invention.

Figure 8 is a schematic diagram showing the analog waveform of the second embodiment of the redundant isolation switch control circuit of the present invention.

Figure 9 is a circuit diagram showing a third embodiment of the redundant isolation switch control circuit of the present invention.

Figure 10 is a schematic diagram showing the analog waveform of the third embodiment of the redundant isolation switch control circuit of the present invention.

Figure 11 is a circuit diagram showing a fourth embodiment of the redundant isolation switch control circuit of the present invention.

Figure 12 is a schematic diagram showing the analog waveform of the fourth embodiment of the redundant isolation switch control circuit of the present invention.

The detailed description and technical contents of the present invention are now described as follows: Referring to FIG. 4 to FIG. 11, the present invention provides a redundant isolating switch control circuit 10, which can be applied to a power supply. The redundant isolation switch control circuit 10 includes a working power supply 101, a power input terminal 102, a power output terminal 103, at least one field effect transistor 11, a first transistor 12, and a controller (not shown). Second transistor 13. The field effect transistor 11 has a gate 111, a source 112 connected to the power input terminal 102, and a drain 113 connected to the power output terminal 103. Further, the power input terminal 102 is actually connected to an output of a power conversion circuit (not shown) to receive power output by the power conversion circuit. On the other hand, the power output terminal 103 is actually connected to a load 20 to supply power to the load 20.

Furthermore, the field effect transistor 11 is the redundant isolation switch of the present invention, and the field effect transistor 11 can adjust the number of layout according to the rated output current of the power supply. For example, the power supply When the rated output current is large, the redundant isolating switch control circuit 10 needs to increase the number of the field effect transistors 11, and when the field effect transistors 11 are implemented in plural, the field effect transistors 11 are connected in parallel. It is provided that each of the gates 111 of the field effect transistors 11 will be connected and controlled by the same control source, and each of the sources 112 is respectively connected to the power input terminal 102, and each of the drain electrodes 113 is respectively connected. The power output terminal 103.

The first transistor 12 and the second transistor 13 form a current mirror circuit. The first transistor 12 has a first base 121 and a first shot connected to the power input 102. The pole 122 and a first collector 123 connected to the working power source 101, the second transistor 13 has a second emitter 131, a second base 132 connected to the working power source 101, and a connection to the power output terminal 103. The second collector 133 is connected to the second emitter 131. Furthermore, the The first transistor 12 and the second transistor 13 can be disposed in the same package, that is, the first transistor 12 and the second transistor 13 can be implemented by encapsulating the wafer.

Further, the redundant isolation switch control circuit 10 of the present invention further includes a first electronic unit 14 and a second electronic unit 15 in the current mirror circuit. The first electronic unit 14 has a connection to the first base 121. The first connecting end 141 and the second connecting end 142 are connected to the second emitter 131. The first electronic unit 14 can be one of a diode, a resistor and a capacitor. Specifically, the present invention is intended to provide the first electronic unit 14. As can be seen from the foregoing description, the first transistor 12 and the second transistor 13 will constitute the current mirror circuit, and according to the working principle of the current mirror circuit, The current of the first transistor 12 should correspond to the current of the second transistor 13, that is, I _B1 =I _B2 . However, the current of the first transistor 12 is different from the current of the second transistor 13 due to the load current of the field effect transistor 11, and the first transistor 12 and the second transistor 13 are turned off and on each other. The state, in turn, controls the opening and closing of the field effect transistor 11. Accordingly, the present invention is implemented in a prior art manner in order to prevent the conventional circuit from causing the second transistor 13 to be burned when the power supply is turned off or not turned on. Moreover, the present invention performs parameter compensation through the arrangement of the first electronic unit 14, so that the operation of the first transistor 12 is made clearer, and the reaction speed of the field effect transistor 11 is increased.

On the other hand, the second electronic unit 15 has a third connection end 151 connected to the first collector 123 and a fourth connection end 152 connected to the gate 111. The second electronic unit 15 is used for One of the closed-circuit integrated circuit components (also known as driver ICs), a diode, and a resistor. More specifically, the second electronic unit 15 plays an important role as the field effect transistor 11 , so the selection of the second electronic unit 15 will depend on the number of the field effect transistors 11 , for example, when When the number of field effect transistors 11 is large and a large amount of driving current is required, the second electronic unit 15 can be implemented by the driving IC.

Further, the redundant isolating switch control circuit 10 further includes a voltage stabilizing unit 16 connected to the power input terminal 102 and having the working power supply 101. The voltage stabilizing unit 16 can be implemented by a voltage stabilizing circuit or as a voltage stabilizing IC. Implementation. On the other hand, the redundant isolating switch control circuit 10 has a first resistor 17 disposed between the operating power source 101 and the first collector 123, and a first resistor 17 disposed between the operating power source 101 and the second base 132. The second resistor 18.

Referring to FIG. 5, the present invention performs circuit simulation by using the redundant isolation switch control circuits 10 and 30 in different working states, wherein the first electronic unit 14 and the second electronic unit 15 are respectively resistors. The redundant isolation switch control circuit 10 is set to have a power input terminal power supply (V _IN1 ) of 12 volts (V), a startup time of 20 ms, a turn-off time of 20 ms, and the other redundant isolation switch control circuit 30 is set. The power input terminal (V _s2 ) is 12 volts (V) and is fixed in the activated state. In addition, the load 20 is 100 amps and 0.12 ohms. On the other hand, the first voltage measuring unit (V _G1 ) presented in FIG. 5 is used to measure the gate source of the field effect transistor 11 . Voltage (V _GS ), the first current measuring unit (I _O1 ) is used to measure the output current of the redundant isolating switch control circuit 10, and the second current measuring unit (I _O2 ) is used to measure the redundancy The output voltage of the switch is controlled by the second voltage measuring unit (V _IN ) for measuring the voltage of the power input terminal of the redundant isolating switch control circuit 10, the third voltage measuring unit (V _O ) It is used to measure the terminal voltage of the load 20. As a result, the results of the circuit simulation are shown in Figure 6. Furthermore, referring to FIG. 7, in an embodiment, the first electronic unit 14 and the second electronic unit 15 are respectively a parallel combination of a diode and a resistor, and the remaining simulation conditions are as in the previous simulation embodiment. Without further elaboration, the results after circuit simulation are shown in Fig. 8. In addition, referring to FIG. 9, in an embodiment, the first electronic unit 14 is a parallel combination of a capacitor and a resistor, and the second electronic unit 15 is a parallel combination of a diode and a resistor, and the remaining simulation conditions are as before. A simulation embodiment will not be described here, and the result after the circuit simulation is shown in FIG. Moreover, referring to FIG. 11, in an embodiment, the first electronic unit 14 is a parallel combination of a capacitor and a resistor, and the second electronic unit 15 is a driving IC, and the remaining simulation conditions are as in the previous simulation embodiment. This will not be repeated, and the results after the circuit simulation are shown in FIG.

However, as can be seen from FIG. 6, FIG. 8, FIG. 10 and FIG. 12, the redundant isolating switch control circuit 10 of the present invention improves the reaction speed of the field effect transistor 11, and effectively reduces the redundant isolating switch control circuit 10. The reverse current generated by the voltage drop of the power input terminal instantaneously, and the gate-source voltage (V _GS ) of the field effect transistor 11 can be increased to more than 5 volts after the voltage of the power input terminal is established, and the field effect electricity is taken into consideration The conduction loss of the crystal 11.

The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. Variations and modifications are still within the scope of the patents of the present invention.

Claims (3)

A redundant isolating switch control circuit comprising: a power input end and a power output end; a voltage stabilizing unit connected to the power input end and having a working power supply; at least one effect transistor having a gate and a connection a source of the power input terminal and a drain connected to the power output terminal; a first transistor having a first base, a first emitter connected to the power input end, and a first collector connected to the working power source; a second transistor having a second emitter, a second base connected to the working power supply and a second collector connected to the power output, the second base being connected to the second emitter; An electronic unit having a first connection end connecting the first base and a second connection end connecting the second emitter; and a second electronic unit having a third connection connecting the first collector And a fourth connection end connected to the gate; wherein the first electronic unit is one of a diode, a resistor and a capacitor, and the second electronic unit is used to activate or deactivate the field Integrated circuit elements to be electrically crystal, a diode and a resistor, wherein one of those. The redundant isolating switch control circuit of claim 1, wherein the redundant isolating switch control circuit comprises a plurality of field effect transistors, wherein the field effect transistors are arranged in parallel, and each of the gates of the field effect transistors The fourth connection ends of the second electronic unit are respectively connected, and each of the sources is respectively connected to the power input end, and each of the drain electrodes is respectively connected to the power output end. The redundant isolating switch control circuit according to claim 1 or 2, wherein the redundant isolating switch control circuit has a first resistor disposed between the working power source and the first collector, and a set in the work The second resistor of the power source and the second base.