TW201407653A - Current control type electronic switch circuit - Google Patents
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本發明有關於一種電流控制型之電子開關電路，尤指一種採用電流形式控制的電子開關電路。
The invention relates to a current control type electronic switch circuit, in particular to an electronic switch circuit controlled by current form.
電晶體是一種固態半導體元件，一般用來作為放大器之外，也常用來作為開關使用。由於電晶體開關沒有機械開關先天性之缺點(例如：切換速度慢、元件容易磨損)。因此，目前電子電路上廣泛地見到電晶體開關的實際應用。
請參閱第１圖，為習用電子開關之電路結構示意圖。如圖所示，電子開關電路100包括一電晶體11、一第一電阻12及一第二電阻13，其可為一共射極電晶體開關電路。
其中，電晶體11為一雙載子電晶體，其基極端透過一第一電阻12連接一輸入電壓Vi，集極端透過第二電阻13連接一工作電壓Vcc，而射極端接地。
當輸入電壓Vi小於電晶體11之基射極臨界電壓VBE(TH)時，電晶體11關閉，電晶體11之集極端與射極端間(C-E)為一斷路狀態，則IB=0，IC=0。相反的，當輸入電壓Vi大於電晶體11之基射極臨界電壓VBE(TH)時，電晶體11導通，電晶體11之集極端與射極端間(C-E)為一短路狀態，IB>0，IC>0，則，導通形成之輸出電流IC亦可用以驅使一負載裝置進行操作。如此，藉由輸入電壓Vi之電壓大小以控制電晶體11之開關動作，進而決定是否導通輸出電流IC。
在此，有別於先前電子開關電路之電路設計方式，本發明將會提出另一種創新設計的電子開關電路，並採用電流形式控制電子開關電路之開關動作，將會是本發明欲達到的目的。
A transistor is a solid-state semiconductor component that is commonly used as an amplifier and is also commonly used as a switch. Since the transistor switch has no congenital disadvantages of the mechanical switch (for example, the switching speed is slow and the component is easily worn). Therefore, the practical application of the transistor switch is widely seen on electronic circuits.
Please refer to Figure 1 for a schematic diagram of the circuit structure of the conventional electronic switch. As shown, the electronic switch circuit 100 includes a transistor 11, a first resistor 12, and a second resistor 13, which may be a common emitter transistor switch circuit.
The transistor 11 is a two-carrier transistor, and its base terminal is connected to an input voltage Vi through a first resistor 12, and the collector terminal is connected to an operating voltage Vcc through the second resistor 13 and the emitter terminal is grounded.
When the input voltage Vi is smaller than the base emitter threshold voltage V BE(TH) of the transistor 11, the transistor 11 is turned off, and the set terminal of the transistor 11 and the emitter terminal (CE) are in an open state, and I B =0, I C =0. Conversely, when the input voltage Vi is greater than the base emitter threshold voltage V BE(TH) of the transistor 11, the transistor 11 is turned on, and the set terminal of the transistor 11 and the emitter terminal (CE) are in a short-circuit state, I B > 0, I C >0, then the output current I C formed by conduction can also be used to drive a load device to operate. In this manner, by controlling the voltage of the input voltage Vi to control the switching operation of the transistor 11, it is determined whether or not the output current I C is turned on.
Here, unlike the circuit design method of the prior electronic switch circuit, the present invention will propose another innovative design of the electronic switch circuit, and use the current form to control the switching action of the electronic switch circuit, which will be the object of the present invention. .
本發明之目的，在於提供一種電流控制型之電子開關電路，其藉由改變輸入電流源之電流大小，以操控電子開關電路之開關動作。
為達成上述目的，本發明提供一種電流控制型之電子開關電路，包括：一第一電晶體，為一雙載子電晶體，其基極端透過一第一電阻連接一輸入電流源，射極端接地；一第二電晶體，為一增強型金氧半場效電晶體，其閘極端連接第一電晶體之集極端，源極端接地；及一第三電晶體，為一空乏型金氧半場效電晶體，其閘極端與第一電晶體之集極端及第二電晶體之閘極端連接一起，汲極端連接一工作電壓，源極端與第二電晶體之汲極端連接且透過一第二電阻而與第三電晶體之閘極端、第一電晶體之集極端及第二電晶體之閘極端連接一起；其中，當輸入電流源等於零時，第一電晶體斷路，而令第二電晶體及第三電晶體導通，相對的，當輸入電流源大於零時，第二電晶體短路，而令第二電晶體及第三電晶體關閉。
本發明一實施例中，其中當第一電晶體斷路時，第二電晶體之閘極端電位相等於汲極端電位而令第二電晶體導通，第三電晶體之閘極端電位相等於源極端電位而令第三電晶體導通；相對的，當第一電晶體短路時，第二電晶體之閘極端及第三電晶體之閘極端進行接地，則第二電晶體之閘極端與源極端間之電位差為零且小於第二電晶體之閘源極臨界電壓，而令第二電晶體關閉，進而使得第三電晶體之閘極端與源極端間之電位差為負且小於該第三電晶體之閘源極截止電壓，而令第三電晶體關閉。
本發明一實施例中，其中第三電晶體為一耐高壓電晶體元件。
本發明另提供一種電流控制型之電子開關電路，包括：一第一電晶體，為一雙載子電晶體，其基極端透過一第一電阻連接一輸入電流源，射極端接地；一第二電晶體，為一增強型金氧半場效電晶體，其閘極端連接第一電晶體之集極端且接收一第一電壓源，源極端接地；及一第三電晶體，為一增強型金氧半場效電晶體，其閘極端接收一第二電壓源，汲極端連接一工作電壓，源極端連接第二電晶體之汲極端，再者，第一電壓源及第二電壓源將大於第二電晶體及第三電晶體之閘源極臨界電壓；其中，輸入電流源等於零時，第一電晶體斷路，而令第二電晶體及第三電晶體導通，相對的，輸入電流源大於零時，第二電晶體短路，而令第二電晶體及第三電晶體關閉。
本發明一實施例中，其中第二電晶體之閘極端透過一第二電阻接收第二電壓源。
本發明一實施例中，其中當第一電晶體斷路時，第二電晶體之閘極端與源極端間之電位差將大於第二電晶體之閘源極臨界電壓而令第二電晶體導通，第三電晶體之閘極端與源極端間之電位差將大於第三電晶體之閘源極臨界電壓而令第三電晶體導通；相對的，當第一電晶體短路時，第二電晶體之閘極端進行接地，則第二電晶體之閘極端與源極端間之電位差為零且小於第二電晶體之閘源極臨界電壓，而令第二電晶體關閉，進而使得第三電晶體之閘極端與源極端間之電位差為負且小於第三電晶體之閘源極截止電壓，而令第三電晶體關閉。
本發明一實施例中，其中第三電晶體為一耐高壓電晶體元件。
本發明又提供一種電流控制型之電子開關電路，包括：一電晶體，為一空乏型金氧半場效電晶體，其閘極端接地，汲極端連接一工作電壓，源極端分別連接一輸入電流源以及一接地電阻；其中，當輸入電流源等於零時，電晶體之閘極端與源極端間之電位差將大於電晶體之閘源極截止電壓，而令電晶體導通，相對的，當輸入電流源大於零時，電晶體之源極端電位將會進行拉升，以致電晶體之閘極端與源極端間之電位差將小於電晶體之閘源極截止電壓，而令電晶體關閉。
本發明一實施例中，其中電晶體為一耐高壓電晶體元件。
It is an object of the present invention to provide a current controlled electronic switching circuit for controlling the switching action of an electronic switching circuit by varying the magnitude of the current of the input current source.
In order to achieve the above object, the present invention provides a current control type electronic switch circuit comprising: a first transistor, which is a two-carrier transistor, the base terminal of which is connected to an input current source through a first resistor, and the emitter is grounded. a second transistor, which is an enhanced MOS field effect transistor, the gate terminal of which is connected to the collector terminal of the first transistor, the source terminal is grounded; and a third transistor is a depleted metal oxide half field effect transistor a crystal whose gate terminal is connected to the collector terminal of the first transistor and the gate terminal of the second transistor, the 汲 terminal is connected to an operating voltage, and the source terminal is connected to the 汲 terminal of the second transistor and is transmitted through a second resistor. The gate terminal of the third transistor, the collector terminal of the first transistor, and the gate terminal of the second transistor are connected together; wherein, when the input current source is equal to zero, the first transistor is broken, and the second transistor and the third are The transistor is turned on. In contrast, when the input current source is greater than zero, the second transistor is shorted, and the second transistor and the third transistor are turned off.
In an embodiment of the invention, when the first transistor is disconnected, the gate potential of the second transistor is equal to the 汲 extreme potential and the second transistor is turned on, and the gate potential of the third transistor is equal to the source terminal potential And causing the third transistor to be turned on; in contrast, when the first transistor is short-circuited, the gate terminal of the second transistor and the gate terminal of the third transistor are grounded, and the gate terminal and the source terminal of the second transistor are The potential difference is zero and less than the gate-threshold voltage of the second transistor, so that the second transistor is turned off, so that the potential difference between the gate terminal and the source terminal of the third transistor is negative and smaller than the gate of the third transistor The source cuts off the voltage and causes the third transistor to turn off.
In an embodiment of the invention, the third transistor is a high voltage resistant transistor component.
The invention further provides a current control type electronic switch circuit, comprising: a first transistor, which is a double carrier transistor, wherein a base terminal is connected to an input current source through a first resistor, and the emitter is grounded; The transistor is an enhanced MOS field effect transistor, the gate terminal of which is connected to the collector terminal of the first transistor and receives a first voltage source, the source terminal is grounded; and a third transistor is a reinforced metal oxide. The half field effect transistor, the gate terminal receives a second voltage source, the 汲 terminal is connected to an operating voltage, the source terminal is connected to the 汲 terminal of the second transistor, and further, the first voltage source and the second voltage source are greater than the second power a gate and a threshold voltage of the crystal and the third transistor; wherein, when the input current source is equal to zero, the first transistor is disconnected, and the second transistor and the third transistor are turned on, and when the input current source is greater than zero, The second transistor is shorted, and the second transistor and the third transistor are turned off.
In an embodiment of the invention, the gate terminal of the second transistor receives the second voltage source through a second resistor.
In an embodiment of the invention, when the first transistor is disconnected, the potential difference between the gate terminal and the source terminal of the second transistor is greater than the gate source threshold voltage of the second transistor, and the second transistor is turned on. The potential difference between the gate terminal and the source terminal of the three transistors will be greater than the gate voltage threshold voltage of the third transistor to turn on the third transistor; in contrast, when the first transistor is short-circuited, the gate terminal of the second transistor is When grounding is performed, the potential difference between the gate terminal and the source terminal of the second transistor is zero and less than the gate-source threshold voltage of the second transistor, so that the second transistor is turned off, thereby causing the gate terminal of the third transistor to be The potential difference between the source terminals is negative and smaller than the gate-source cut-off voltage of the third transistor, and the third transistor is turned off.
In an embodiment of the invention, the third transistor is a high voltage resistant transistor component.
The invention further provides a current control type electronic switch circuit, comprising: a transistor, which is a depleted metal oxide half field effect transistor, the gate terminal is grounded, the 汲 terminal is connected to an operating voltage, and the source terminal is respectively connected to an input current source. And a grounding resistor; wherein, when the input current source is equal to zero, the potential difference between the gate terminal and the source terminal of the transistor will be greater than the gate-source cut-off voltage of the transistor, and the transistor is turned on, and relatively, when the input current source is greater than At zero hour, the source extreme potential of the transistor will be pulled up, so that the potential difference between the gate terminal and the source terminal of the crystal is less than the gate-source cut-off voltage of the transistor, and the transistor is turned off.
In an embodiment of the invention, the transistor is a high voltage resistant transistor component.
請參閱第２圖，為本發明電流控制型之電子開關電路一較佳實施例之電路結構示意圖。如圖所示，本實施例電子開關電路200包括一第一電晶體21、一第二電晶體22及一第三電晶體23。並且，本發明一實施例中，第一電晶體21亦可選擇為一NPN雙載子電晶體(NPN BJT)，第二電晶體22亦可選擇為一N通道增強型金氧半場效電晶體(N-channel Enhancement MOSFET)，而第三電晶體23亦可選擇為一N通道空乏型金氧半場效電晶體(N-channel Depletion MOSFET)。
其中，第一電晶體21之基極端透過一第一電阻24連接一輸入電流源(Ii)20，射極端接地。第二電晶體22之閘極端連接第一電晶體21之集極端，源極端接地。第三電晶體23之閘極端與第一電晶體21之集極端及第二電晶體22之閘極端連接一起，汲極端連接一工作電壓VDD，源極端與第二電晶體22之汲極端連接且透過一第二電阻25而與第三電晶體23之閘極端、第一電晶體21之集極端及第二電晶體22之閘極端連接一起。
又，在本發明一實施例中，第二電晶體22亦可選用一低壓電晶體元件，而第三電晶體23亦可選用一耐高壓電晶體元件。
本實施例電子開關電路200實際進行電路運作時，若輸入的電流源(Ii)20等於零，將會驅使第一電晶體21之集極端與射極端間(C-E)處在斷路狀態，則第二電晶體之22之閘極端電位將會相等於汲極端電位而使得第二電晶體22保持導通，而第三電晶體23之閘極端電位將會相等於源極端電位而使得第三電晶體23保持導通。導通的第二電晶體22及第三電晶體23將會流過一輸出電流(IO)，之後，以利用輸出電流(IO)驅使一負載裝置進行操作。
相對的，若輸入的電流源(Ii)20大於零，將會驅使第一電晶體21之集極端與射極端間(C-E)處在短路狀態，則第二電晶體22之閘極端及第三電晶體23之閘極端接地而使得兩者之電位為零。此時，第二電晶體22之閘極端與源極端間之電位差VGS將等於零而小於第二電晶體22之閘源極臨界電壓VGS(TH)，導致第二電晶體22進行關閉。接著，關閉後的第二電晶體22其汲極端電位將會稍微增加，而與第二電晶體22之汲極端連接的第三電晶體23之源極端電位也會跟著增加，以致第三電晶體23之閘極端與源極端間之電位差VGS為負而小於第三電晶體23之閘源極截止電壓VGS(OFF)，最後導致第三電晶體23也會進行關閉。則，關閉之後的第二電晶體22及第三電晶體23係無法流過任何的輸出電流(IO)。
再者，本發明另一實施例中，第三電晶體23也可選擇為一N通道的接面場效電晶體(N-channel JFET)。
請參閱第３圖，為本發明電流控制型之電子開關電路又一實施例之電路結構示意圖。如圖所示，本實施例電子開關電路300包括一第一電晶體31、一第二電晶體32及一第三電晶體33。並且，本發明一實施例中，第一電晶體31亦可選擇為一NPN雙載子電晶體(NPN BJT)，第二電晶體32亦可選擇為一N通道增強型金氧半場效電晶體(N-channel Enhancement MOSFET)，而第三電晶體33也可選擇為一N通道增強型金氧半場效電晶體(N-channel Enhancement MOSFET)。
其中，第一電晶體31之基極端透過一第一電阻34連接一輸入電流源(Ii)30，射極端接地。第二電晶體32之閘極端連接第一電晶體31之集極端且接收一第一電壓源VG1，源極端接地。第三電晶體33之閘極端接收一第二電壓源VG2，汲極端連接一工作電壓VDD，源極端連接第二電晶體22之汲極端。再者，第二電晶體32之閘極端將會透過一第二電阻35接收該第一電壓源VG1。此外，第二電晶體32及第三電晶體33所接收的第一電壓源VG1及第二電壓源VG2將分別大於第二電晶體32及第三電晶體33之閘源極臨界電壓VGS(TH)。
又，在本發明一實施例中，第二電晶體32亦可選用一低壓電晶體元件，而第三電晶體33亦可選用一耐高壓電晶體元件。
本實施例電子開關電路300實際進行電路運作時，若輸入的電流源(Ii)30為零，將會驅使第一電晶體31之集極端與射極端間(C-E)處在斷路狀態，則第二電晶體32之閘極端與源極端間之電位差VGS將大於第二電晶體32之閘源極臨界電壓VGS(TH)，而令第二電晶體32保持導通，而第三電晶體33之閘極端與源極端間之電位差VGS將大於該第三電晶體33之閘源極臨界電壓VGS(TH)，而令第三電晶體33保持導通。導通的第二電晶體32及第三電晶體33將會流過一輸出電流(IO) 之後，以利用輸出電流(IO)驅使一負載裝置進行操作。
相對的，若輸入的電流源(Ii)30大於零，將會驅使第一電晶體31之集極端與射極端間(C-E)處在短路狀態，則第二電晶體32之閘極端接地。此時，第二電晶體32之閘極端與源極端間之電位差VGS將等於零而小於第二電晶體32之閘源極臨界電壓VGS(TH)，導致第二電晶體32進行關閉。接著，關閉後的第二電晶體32其汲極端電位將會稍微增加，而與第二電晶體32之汲極端連接的第三電晶體33之源極端電位也會跟著增加，以致第三電晶體33之閘極端與源極端間之電位差VGS將小於第三電晶體33之閘源極臨界電壓VGS(TH)，最後導致第三電晶體33也會進行關閉。則，關閉之後的第二電晶體32及第三電晶體33係無法流過任何的輸出電流(IO)。
請參閱第４圖，為本發明電流控制型之電子開關電路又一實施例之電路結構示意圖。如圖所示，本實施例電子開關電路400包括一電晶體41，該電晶體41係可為一N通道空乏型金氧半場效電晶體(N-channel Depletion MOSFET)且為一耐高壓電晶體元件。
電晶體41之閘極端將會接地，汲極端連接一工作電壓VDD，而源極端分別連接一輸入電流源(Ii)40以及一接地電阻42。
本實施例電子開關電路400實際進行電路運作時，若輸入的電流源(Ii)40為零，則電晶體41之閘極端與源極端間之電位差VGS將會接近於零而大於電晶體41之閘源極截止電壓VGS(OFF)，以令電晶體41保持導通而流過一可用以驅使負載裝置操作之輸出電流(IO)。
相對的，若輸入的電流源(Ii)40大於零，電晶體41之源極端電位將會進行拉升，以致電晶體41之閘極端與源極端間之電位差VGS為負而小於電晶體41之閘源極截止電壓VGS(OFF)，電晶體41將會進行關閉。則，關閉後的電晶體41係無法流過任何的輸出電流(IO)。
再者，本發明另一實施例中，電晶體41也可選擇為一N通道的接面場效電晶體(N-channel JFET)。
總合上述，本發明將藉由改變輸入電流源(Ii)20/30/40之電流大小，以操控電子開關電路200/300/400之開關動作，並藉此以決定是否導通開關而流過一可用以驅使負載裝置操作之輸出電流IO。
以上所述者，僅為本發明之一較佳實施例而已，並非用來限定本發明實施之範圍，即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
Please refer to FIG. 2 , which is a schematic diagram showing the circuit structure of a current control type electronic switch circuit according to a preferred embodiment of the present invention. As shown, the electronic switch circuit 200 of the present embodiment includes a first transistor 21, a second transistor 22, and a third transistor 23. In an embodiment of the invention, the first transistor 21 can also be selected as an NPN bipolar transistor (NPN BJT), and the second transistor 22 can also be selected as an N-channel enhancement type MOS field-effect transistor. (N-channel Enhancement MOSFET), and the third transistor 23 can also be selected as an N-channel depletion MOSFET.
The base of the first transistor 21 is connected to an input current source (I i ) 20 through a first resistor 24, and the emitter is grounded. The gate terminal of the second transistor 22 is connected to the collector terminal of the first transistor 21, and the source terminal is grounded. The gate terminal of the third transistor 23 is connected to the collector terminal of the first transistor 21 and the gate terminal of the second transistor 22. The gate terminal is connected to an operating voltage V DD , and the source terminal is connected to the second terminal of the second transistor 22 . And connected to the gate terminal of the third transistor 23, the collector terminal of the first transistor 21, and the gate terminal of the second transistor 22 through a second resistor 25.
Moreover, in an embodiment of the invention, the second transistor 22 may also be a low voltage transistor component, and the third transistor 23 may also be a high voltage resistant transistor component.
When the electronic switch circuit 200 of the present embodiment actually performs circuit operation, if the input current source (I i ) 20 is equal to zero, the set terminal and the emitter terminal (CE) of the first transistor 21 are driven to be in an open state. The gate potential of the second transistor 22 will be equal to the 汲 extreme potential such that the second transistor 22 remains conductive, and the gate potential of the third transistor 23 will be equal to the source terminal potential such that the third transistor 23 Keep on. The turned-on second transistor 22 and the third transistor 23 will flow an output current (I O ), after which an output device (I O ) is used to drive a load device to operate.
In contrast, if the input current source (I i ) 20 is greater than zero, it will drive the short circuit between the collector terminal and the emitter terminal (CE) of the first transistor 21, and then the gate terminal of the second transistor 22 and the first The gate of the triode 23 is extremely grounded such that the potential of both is zero. At this time, the potential difference V GS between the gate terminal and the source terminal of the second transistor 22 will be equal to zero and smaller than the gate-source threshold voltage V GS(TH) of the second transistor 22, causing the second transistor 22 to be turned off. Then, the second transistor 22 after the shutdown has a slight potential increase, and the source potential of the third transistor 23 connected to the second terminal of the second transistor 22 is also increased, so that the third transistor is increased. The potential difference V GS between the gate terminal and the source terminal of 23 is negative and smaller than the gate-source cut-off voltage V GS (OFF) of the third transistor 23, and finally causes the third transistor 23 to also be turned off. Then, the second transistor 22 and the third transistor 23 after the shutdown cannot flow any output current (I O ).
Furthermore, in another embodiment of the present invention, the third transistor 23 can also be selected as an N-channel J-FET.
Please refer to FIG. 3, which is a circuit diagram of still another embodiment of a current control type electronic switch circuit according to the present invention. As shown, the electronic switch circuit 300 of the present embodiment includes a first transistor 31, a second transistor 32, and a third transistor 33. In an embodiment of the invention, the first transistor 31 can also be selected as an NPN bipolar transistor (NPN BJT), and the second transistor 32 can also be selected as an N-channel enhancement type MOS field-effect transistor. (N-channel Enhancement MOSFET), and the third transistor 33 can also be selected as an N-channel enhancement type N-channel enhancement MOSFET.
The base of the first transistor 31 is connected to an input current source (I i ) 30 through a first resistor 34, and the emitter is grounded. The gate terminal of the second transistor 32 is connected to the collector terminal of the first transistor 31 and receives a first voltage source V G1 , and the source terminal is grounded. The gate terminal of the third transistor 33 receives a second voltage source V G2 , the drain terminal is connected to an operating voltage V DD , and the source terminal is connected to the drain terminal of the second transistor 22 . Furthermore, the gate terminal of the second transistor 32 will receive the first voltage source V G1 through a second resistor 35. In addition, the first voltage source V G1 and the second voltage source V G2 received by the second transistor 32 and the third transistor 33 will be greater than the gate threshold voltage V of the second transistor 32 and the third transistor 33, respectively. GS(TH) .
Moreover, in an embodiment of the invention, the second transistor 32 may also be a low voltage transistor component, and the third transistor 33 may also be a high voltage resistant transistor component.
When the electronic switch circuit 300 of the present embodiment actually performs circuit operation, if the input current source (I i ) 30 is zero, the driving terminal (CE) of the first transistor 31 will be driven to be in an open state. The potential difference V GS between the gate terminal and the source terminal of the second transistor 32 will be greater than the gate source threshold voltage V GS(TH) of the second transistor 32, so that the second transistor 32 remains conductive, and the third transistor The potential difference V GS between the gate terminal and the source terminal of 33 will be greater than the gate-source threshold voltage V GS(TH) of the third transistor 33, so that the third transistor 33 remains conductive. The turned-on second transistor 32 and the third transistor 33 will flow through an output current (I O ) to drive a load device to operate using the output current (I O ).
In contrast, if the input current source (I i ) 30 is greater than zero, it will drive the short circuit between the collector terminal and the emitter terminal (CE) of the first transistor 31, and the gate terminal of the second transistor 32 is grounded. At this time, the potential difference V GS between the gate terminal and the source terminal of the second transistor 32 will be equal to zero and less than the gate-source threshold voltage V GS(TH) of the second transistor 32, causing the second transistor 32 to be turned off. Then, the second transistor 32 after the shutdown has a slight potential increase, and the source terminal potential of the third transistor 33 connected to the second terminal of the second transistor 32 is also increased, so that the third transistor is increased. The potential difference V GS between the gate terminal and the source terminal of 33 will be smaller than the gate-source threshold voltage V GS(TH) of the third transistor 33, and finally the third transistor 33 will also be turned off. Then, the second transistor 32 and the third transistor 33 after the shutdown cannot flow any output current (I O ).
Please refer to FIG. 4, which is a circuit diagram of still another embodiment of a current control type electronic switch circuit according to the present invention. As shown in the figure, the electronic switch circuit 400 of the present embodiment includes a transistor 41, which can be an N-channel Depletion MOSFET and is a high voltage resistant device. Crystal element.
The gate terminal of the transistor 41 will be grounded, the 汲 terminal is connected to an operating voltage V DD , and the source terminal is connected to an input current source (I i ) 40 and a grounding resistor 42, respectively.
When the electronic switch circuit 400 of the present embodiment actually performs circuit operation, if the input current source (I i ) 40 is zero, the potential difference V GS between the gate terminal and the source terminal of the transistor 41 will be close to zero and larger than the transistor. The gate-to-source cutoff voltage V GS (OFF) of 41 is such that the transistor 41 remains conductive and flows through an output current (I O ) that can be used to drive the operation of the load device.
In contrast, if the input current source (I i ) 40 is greater than zero, the source terminal potential of the transistor 41 will be pulled up to make the potential difference V GS between the gate terminal and the source terminal of the crystal 41 negative and smaller than the transistor. The gate-source cut-off voltage V GS (OFF) of 41 will turn off the transistor 41. Then, the closed transistor 41 cannot flow any output current (I O ).
Furthermore, in another embodiment of the invention, the transistor 41 can also be selected as an N-channel J-FET.
In summary, the present invention will control the switching action of the electronic switch circuit 200/300/400 by changing the current of the input current source (I i ) 20/30/40, and thereby determining whether to turn on the switch. An output current I O that can be used to drive the operation of the load device.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, which is equivalent to the changes in shape, structure, features and spirit of the present invention. Modifications are intended to be included in the scope of the patent application of the present invention.
100．．．電子開關電路100. . . Electronic switch circuit
11．．．電晶體11. . . Transistor
12．．．第一電阻12. . . First resistance
13．．．第二電阻13. . . Second resistance
200．．．電子開關電路200. . . Electronic switch circuit
20．．．輸入電流源20. . . Input current source
21．．．第一電晶體twenty one. . . First transistor
22．．．第二電晶體twenty two. . . Second transistor
23．．．第三電晶體twenty three. . . Third transistor
24．．．第一電阻twenty four. . . First resistance
25．．．第二電阻25. . . Second resistance
300．．．電子開關電路300. . . Electronic switch circuit
30．．．輸入電流源30. . . Input current source
31．．．第一開關器31. . . First switch
32．．．第二開關器32. . . Second switch
33．．．第三開關器33. . . Third switch
34．．．第一電阻34. . . First resistance
35．．．第二電阻35. . . Second resistance
400．．．電子開關電路400. . . Electronic switch circuit
40．．．輸入電流源40. . . Input current source
41．．．電晶體41. . . Transistor
42．．．接地電阻42. . . Grounding resistance
第１圖：習用電子開關電路之電路結構示意圖。
第２圖：本發明電流控制型之電子開關電路一較佳實施例之電路結構示意圖。
第３圖：本發明電流控制型之電子開關電路又一實施例之電路結構示意圖。
第４圖：本發明電流控制型之電子開關電路又一實施例之電路結構示意圖。
Figure 1: Schematic diagram of the circuit structure of a conventional electronic switch circuit.
Fig. 2 is a circuit diagram showing a preferred embodiment of a current control type electronic switching circuit of the present invention.
Fig. 3 is a circuit diagram showing still another embodiment of the current control type electronic switch circuit of the present invention.
Fig. 4 is a circuit diagram showing still another embodiment of the current control type electronic switch circuit of the present invention.
200．．．電子開關電路200. . . Electronic switch circuit
20．．．輸入電流源20. . . Input current source
21．．．第一電晶體twenty one. . . First transistor
22．．．第二電晶體twenty two. . . Second transistor
23．．．第三電晶體twenty three. . . Third transistor
24．．．第一電阻twenty four. . . First resistance
25．．．第二電阻25. . . Second resistance
Claims (9)
一第一電晶體，為一雙載子電晶體，其基極端透過一第一 電阻連接一輸入電流源，射極端接地；
一第二電晶體，為一增強型金氧半場效電晶體，其閘極端 連接第一電晶體之集極端，源極端接地；及
一第三電晶體，為一空乏型金氧半場效電晶體，其閘極端 與第一電晶體之集極端及第二電晶體之閘極端連接一起 ，汲極端連接一工作電壓，源極端與第二電晶體之汲極 端連接且透過一第二電阻而與第三電晶體之閘極端、第 一電晶體之集極端及第二電晶體之閘極端連接一起；
其中，當輸入電流源等於零時，第一電晶體斷路，而令第 二電晶體及第三電晶體導通，相對的，當輸入電流源大 於零時，第二電晶體短路，而令第二電晶體及第三電晶 體關閉。A current control type electronic switch circuit comprising:
a first transistor, which is a double carrier transistor, the base terminal of which is connected to an input current source through a first resistor, and the emitter is grounded;
a second transistor, which is an enhanced MOS field effect transistor, the gate terminal of which is connected to the collector terminal of the first transistor, the source terminal is grounded; and a third transistor is a depleted MOS field device. The gate terminal is connected to the collector terminal of the first transistor and the gate terminal of the second transistor, the 汲 terminal is connected to an operating voltage, and the source terminal is connected to the 汲 terminal of the second transistor and transmits through a second resistor. The gate terminal of the three transistors, the collector terminal of the first transistor, and the gate terminal of the second transistor are connected together;
Wherein, when the input current source is equal to zero, the first transistor is disconnected, and the second transistor and the third transistor are turned on. In contrast, when the input current source is greater than zero, the second transistor is short-circuited, and the second transistor is made The crystal and the third transistor are turned off.
一第一電晶體，為一雙載子電晶體，其基極端透過一第一 電阻連接一輸入電流源，射極端接地；
一第二電晶體，為一增強型金氧半場效電晶體，其閘極端 連接第一電晶體之集極端且接收一第一電壓源，源極端 接地；及
一第三電晶體，為一增強型金氧半場效電晶體，其閘極端 接收一第二電壓源，汲極端連接一工作電壓，源極端連 接第二電晶體之汲極端，再者，第一電壓源及第二電壓 源將大於第二電晶體及第三電晶體之閘源極臨界電壓；
其中，輸入電流源等於零時，第一電晶體斷路，而令第二 電晶體及第三電晶體導通，相對的，輸入電流源大於零 時，第二電晶體短路，而令第二電晶體及第三電晶體關 閉。A current control type electronic switch circuit comprising:
a first transistor, which is a double carrier transistor, the base terminal of which is connected to an input current source through a first resistor, and the emitter is grounded;
a second transistor, which is an enhanced MOS field effect transistor, whose gate terminal is connected to the collector terminal of the first transistor and receives a first voltage source, the source terminal is grounded; and a third transistor is an enhancement The MOSFET has a second voltage source, the 汲 terminal is connected to an operating voltage, and the source terminal is connected to the 汲 terminal of the second transistor. Further, the first voltage source and the second voltage source are greater than a gate source threshold voltage of the second transistor and the third transistor;
Wherein, when the input current source is equal to zero, the first transistor is disconnected, and the second transistor and the third transistor are turned on. In contrast, when the input current source is greater than zero, the second transistor is short-circuited, and the second transistor is The third transistor is turned off.
一電晶體，為一空乏型金氧半場效電晶體，其閘極端接地 ，汲極端連接一工作電壓，源極端分別連接一輸入電流 源以及一接地電阻；
其中，當輸入電流源等於零時，電晶體之閘極端與源極端 間之電位差將大於電晶體之閘源極截止電壓，而令電晶 體導通，相對的，當輸入電流源大於零時，電晶體之源 極端電位將會進行拉升，以致電晶體之閘極端與源極端 間之電位差將小於電晶體之閘源極截止電壓，而令電晶 體關閉。A current control type electronic switch circuit comprising:
A transistor is a depleted gold-oxygen half-field effect transistor having a gate terminal grounded, a terminal connected to an operating voltage, and an input terminal connected to an input current source and a grounding resistor;
Wherein, when the input current source is equal to zero, the potential difference between the gate terminal and the source terminal of the transistor will be greater than the gate-source cut-off voltage of the transistor, and the transistor is turned on. In contrast, when the input current source is greater than zero, the transistor The source extreme potential will be pulled up, so that the potential difference between the gate terminal and the source terminal of the crystal will be less than the gate-source cut-off voltage of the transistor, and the transistor will be turned off.
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| TW101128024A TW201407653A (en) | 2012-08-03 | 2012-08-03 | Current control type electronic switch circuit |
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| TW101128024A TW201407653A (en) | 2012-08-03 | 2012-08-03 | Current control type electronic switch circuit |
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| TW201407653A true TW201407653A (en) | 2014-02-16 |
| TWI512778B TWI512778B (en) | 2015-12-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI645639B (en) * | 2017-11-09 | 2018-12-21 | 海韻電子工業股份有限公司 | Redundant isolating switch control circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4454454A (en) * | 1983-05-13 | 1984-06-12 | Motorola, Inc. | MOSFET "H" Switch circuit for a DC motor |
| US5525925A (en) * | 1992-09-25 | 1996-06-11 | Texas Instruments Incorporated | Simple power MOSFET low side driver switch-off circuit with limited di/dt and fast response |
| TW242713B (en) * | 1994-03-15 | 1995-03-11 | Siemens Nixdorf Inf Syst | Circuit arrangement for a switch |
| TW333698B (en) * | 1996-01-30 | 1998-06-11 | Hitachi Ltd | The method for output circuit to select switch transistor & semiconductor memory |
| HK1049265A2 (en) * | 2002-02-27 | 2003-04-11 | Clipsal Asia Holdings Limited | A two-wire power switch with line-powered switch controlling means |
| FR2944398B1 (en) * | 2009-04-08 | 2011-05-20 | Valeo Equip Electr Moteur | DEVICE FOR SUPPLYING A ROTOR WINDING OF A MOTOR VEHICLE ALTERNATOR AND CORRESPONDING ALTERNATOR |
| TW201044782A (en) * | 2009-06-15 | 2010-12-16 | Univ Nat Taipei Technology | Driving circuit of switch |
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| TWI645639B (en) * | 2017-11-09 | 2018-12-21 | 海韻電子工業股份有限公司 | Redundant isolating switch control circuit |
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