TWI644344B - Processing liquid supply device, substrate processing system, and processing liquid supply method - Google Patents
Processing liquid supply device, substrate processing system, and processing liquid supply method Download PDFInfo
- Publication number
- TWI644344B TWI644344B TW105126375A TW105126375A TWI644344B TW I644344 B TWI644344 B TW I644344B TW 105126375 A TW105126375 A TW 105126375A TW 105126375 A TW105126375 A TW 105126375A TW I644344 B TWI644344 B TW I644344B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing liquid
- processing
- unit
- opening
- organic solvent
- Prior art date
Links
Classifications
-
- H10P72/0411—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H10P52/00—
-
- H10P70/15—
-
- H10P72/0448—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
Landscapes
- Engineering & Computer Science (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Abstract
本處理液供給裝置包含有:處理液槽,其貯存處理液;第1處理液配管,其連接上述處理單元與上述處理液槽;開閉單元,其用以開閉上述第1處理液配管;加壓單元,其為了將上述處理液槽之內部之處理液送出至上述第1處理液配管之內部,而利用氣體對該處理液進行加壓;壓力調整單元,其用以調整上述處理液槽之內部之壓力;及控制裝置,其於上述開閉單元關閉之前控制上述壓力調整單元,使處於加壓狀態之上述處理液槽之內部逐漸地大氣開放,並於該大氣開放開始後關閉上述開閉單元。 The processing liquid supply device includes: a processing liquid tank that stores a processing liquid; a first processing liquid pipe that connects the processing unit and the processing liquid tank; an opening and closing unit that opens and closes the first processing liquid pipe; pressurized A unit for pressurizing the processing liquid with a gas in order to send the processing liquid inside the processing liquid tank to the first processing liquid pipe; a pressure adjusting unit for adjusting the inside of the processing liquid tank Pressure; and a control device that controls the pressure adjusting unit before the opening and closing unit is closed, gradually opens the atmosphere inside the pressurized treatment liquid tank, and closes the opening and closing unit after the opening of the atmosphere is started.
Description
本發明係關於供給處理液之處理液供給裝置、具備該供給裝置之基板處理系統、及供給處理液之處理液供給方法。作為使用處理液之處理之對象的基板,包含有例如半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(FED;Field Emission Display)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板等。 The present invention relates to a processing liquid supply device that supplies a processing liquid, a substrate processing system provided with the supply device, and a processing liquid supply method that supplies a processing liquid. The substrates to be processed using the processing liquid include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for field emission displays (FED; Field Emission Display), substrates for optical discs, and disks Substrates, substrates for optomagnetic discs, substrates for photomasks, ceramic substrates, substrates for solar cells, etc.
於下述專利文獻1中,揭示有將處理液供給至基板處理部之處理液供給裝置。上述處理液供給裝置包含有:處理液槽,其貯存處理液;處理液配管,其連接處理液槽與基板處理部;及閥,其用以開閉處理液配管。上述處理液供給裝置進一步包含有:加壓單元,其採用所謂的加壓壓送方式,利用氣體對處理液槽之內部之處理液進行加壓,藉此使該處理液移動至處理液配管。 Patent Document 1 below discloses a processing liquid supply device that supplies a processing liquid to a substrate processing section. The processing liquid supply device includes: a processing liquid tank that stores the processing liquid; a processing liquid pipe that connects the processing liquid tank and the substrate processing section; and a valve that opens and closes the processing liquid pipe. The processing liquid supply device further includes a pressurizing unit that uses a so-called pressurized pressure feeding method to pressurize the processing liquid inside the processing liquid tank with a gas, thereby moving the processing liquid to the processing liquid piping.
[專利文獻1]日本專利特開2000-21703號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2000-21703
在如此之處理液供給裝置中,若自基板處理部側被通知不需供給,基板處理部側之閥便會在處理液槽及處理液配管之內部維持為被加壓之狀態下被關閉。因此,在閥關閉以後,處理液槽及處理液配管之內部的壓力仍保持為被加壓之狀態。 In such a processing liquid supply device, if it is notified from the substrate processing section side that supply is not required, the valve on the substrate processing section side is closed while maintaining the pressurized state inside the processing liquid tank and the processing liquid piping. Therefore, after the valve is closed, the pressure inside the processing liquid tank and the processing liquid piping is kept in a pressurized state.
由於利用高壓之加壓氣體持續加壓,因此大量之氣體(氮氣等惰性氣體)便溶入處理液槽及處理液配管之內部之處理液中。因為氣體對液體之溶解度與其壓力成比例,所以在處於高壓狀態之處理液配管之內部,會有氣體大量地溶入於處理液之可能性。 Since the high-pressure pressurized gas is used for continuous pressurization, a large amount of gas (inert gas such as nitrogen) dissolves into the processing liquid inside the processing liquid tank and the processing liquid piping. Because the solubility of gas to liquid is proportional to its pressure, there is a possibility that a large amount of gas will be dissolved in the treatment liquid inside the treatment liquid piping under high pressure.
若被供給至基板之處理液(可列舉例如有機溶劑等)中含有氣泡,於藉由處理液之液體與氣泡所形成之氣液界面便會吸引而聚集處理液中所包含之微小的異物,而成長為微粒。其結果,會有於乾燥後之基板表面產生微粒之可能性。而且,若處理液中所包含之氣泡量多,氣液界面便會大面積化而存在產生微粒之問題顯著化之可能性。 If the processing liquid (for example, organic solvent, etc.) supplied to the substrate contains bubbles, the gas-liquid interface formed by the liquid of the processing liquid and the bubbles attracts and accumulates tiny foreign substances contained in the processing liquid, And grow into particles. As a result, particles may be generated on the surface of the substrate after drying. Moreover, if the amount of bubbles contained in the treatment liquid is large, the gas-liquid interface will be enlarged in size, and there is a possibility that the problem of generation of particles becomes significant.
如此之問題不僅於將有機溶劑供給至基板的情形時會產生,於將其他種類之處理液供給至基板的情形時亦存在相同之問題。 Such a problem occurs not only when the organic solvent is supplied to the substrate, but also when the other type of processing liquid is supplied to the substrate.
因此,本發明一目的在於提供可減低供給之處理液所包含之氣泡量之處理液供給裝置及處理液供給方法。 Therefore, an object of the present invention is to provide a processing liquid supply device and a processing liquid supply method that can reduce the amount of bubbles included in the supplied processing liquid.
又,本發明另一目的在於提供可抑制或防止微粒產生之基板處理系統。 In addition, another object of the present invention is to provide a substrate processing system that can suppress or prevent generation of particles.
本發明提供一種處理液供給裝置,係將處理液供給至對基板實施使用處理液之處理之處理單元者,其包含有:處理液槽,其貯存處理液;第1處理液配管,其連接上述處理單元與上述處理液槽;開閉單元,其用以開閉上述第1處理液配管;加壓單元,其利用氣體 對上述處理液槽之內部之處理液進行加壓,藉此使該處理液移動至上述第1處理液配管;壓力調整單元,其用以調整上述處理液槽之內部之壓力;及控制裝置,其為了停止處理液自上述處理液供給裝置朝向上述處理單元之供給,而於上述開閉單元關閉之前控制上述壓力調整單元,使處於加壓狀態之上述處理液槽之內部逐漸地大氣開放,並於該大氣開放開始後關閉上述開閉單元。 The present invention provides a processing liquid supply device that supplies a processing liquid to a processing unit that performs processing using a processing liquid on a substrate, and includes: a processing liquid tank that stores a processing liquid; and a first processing liquid pipe that connects to the above The processing unit and the processing liquid tank; the opening and closing unit for opening and closing the first processing liquid piping; the pressurizing unit, which uses gas Pressurizing the processing liquid inside the processing liquid tank, thereby moving the processing liquid to the first processing liquid piping; a pressure adjustment unit for adjusting the pressure inside the processing liquid tank; and a control device, In order to stop the supply of the processing liquid from the processing liquid supply device to the processing unit, the pressure adjusting unit is controlled before the opening and closing unit is closed, so that the inside of the processing liquid tank in the pressurized state is gradually opened to the atmosphere, and After the opening of the atmosphere, the opening and closing unit is closed.
根據該構成,於處理液自處理液供給裝置朝向處理單元之供給停止時,控制裝置於開閉單元關閉之前,使因加壓單元而處於加壓狀態之處理液槽之內部逐漸地大氣開放,而於大氣開放開始後關閉上述開閉單元。由於在處理液槽內部之減壓開始後關閉開閉單元,因此,於關閉開閉單元之後,處理液槽之內部及第1處理液配管之內部便被維持在較上述之加壓狀態更為減壓之狀態。由於氣體對液體之溶解度與其壓力成比例,因此在處於該減壓狀態之處理液配管之內部,並不會有較大量之氣體溶入。由於處理液之溶存氣體量較少,因此可減低在處理液中所產生之氣泡量。 According to this configuration, when the supply of the processing liquid from the processing liquid supply device to the processing unit is stopped, the control device gradually opens the atmosphere of the processing liquid tank pressurized by the pressurization unit before the opening and closing unit is closed, and Close the opening and closing unit after the opening of the atmosphere. Since the opening and closing unit is closed after the decompression inside the processing liquid tank is started, after closing the opening and closing unit, the inside of the processing liquid tank and the inside of the first processing liquid piping are maintained at a more reduced pressure than the above-mentioned pressurized state 'S state. Since the solubility of the gas in the liquid is proportional to its pressure, no large amount of gas will dissolve inside the processing liquid piping in this reduced pressure state. Since the amount of dissolved gas in the treatment liquid is small, the amount of bubbles generated in the treatment liquid can be reduced.
又,由於逐漸地進行處理液槽之內部之大氣開放,因此亦可抑制或防止溶入於處理液之氣體在該減壓過程中作為氣泡而出現。 In addition, since the atmosphere inside the processing liquid tank is gradually opened, it is also possible to suppress or prevent the gas dissolved in the processing liquid from appearing as bubbles during the depressurization process.
藉此,可提供能減低供給之處理液所包含之氣泡量之處理液供給裝置。 Thereby, it is possible to provide a processing liquid supply device capable of reducing the amount of bubbles contained in the supplied processing liquid.
在本發明一實施形態中,上述控制裝置係於上述處理液槽之內部之壓力下降至大氣壓後,關閉上述開閉單元。 In one embodiment of the present invention, the control device closes the opening and closing unit after the pressure inside the processing liquid tank drops to atmospheric pressure.
根據該構成,由於在處理液槽之內部之壓力下降至大氣壓後便關閉開閉單元,因此,於關閉開閉單元後,處理液槽之內部及 第1處理液配管之內部便被維持為大氣壓。因此,可更進一步減低溶入處理液槽之內部及第1處理液配管之內部之處理液的溶存氣體量。因此,可更進一步減低處理液之氣泡量。 According to this configuration, the opening and closing unit is closed after the pressure inside the processing liquid tank drops to atmospheric pressure. Therefore, after closing the opening and closing unit, the inside of the processing liquid tank and The inside of the first processing liquid piping is maintained at atmospheric pressure. Therefore, it is possible to further reduce the amount of dissolved gas in the processing liquid dissolved in the processing liquid tank and the first processing liquid piping. Therefore, the amount of bubbles in the treatment liquid can be further reduced.
所包含上述處理液供給裝置亦可進一步包含用以檢測上述處理液槽之內部之壓力的壓力計,上述控制裝置係在自上述大氣開放開始經過既定時間之時間點時上述壓力計之檢測值未達既定之臨限值之情形時判斷為錯誤狀態。 The included processing liquid supply device may further include a pressure gauge for detecting the pressure inside the processing liquid tank, and the control device is not capable of detecting the value of the pressure gauge when a predetermined time has passed since the opening of the atmosphere It is judged as an error state when it reaches the established threshold.
根據該構成,於自大氣開放開始經過既定時間之時間點時壓力值未達既定之臨限值之情形時判斷為錯誤狀態。藉此,可防止處理液槽之內部之減壓速度過快,因而可更有效地減低處理液所包含之氣泡量。 According to this configuration, when the pressure value does not reach the predetermined threshold value when a predetermined time has passed since the opening of the atmosphere, it is determined as an error state. By this, the decompression speed inside the processing liquid tank can be prevented from being too fast, so that the amount of bubbles contained in the processing liquid can be more effectively reduced.
上述處理液裝置亦可進一步包含有連通上述處理液槽之內部與大氣之大氣連通配管,上述壓力調整單元包含有用以開閉上述大氣連通配管之大氣開閉閥。 The treatment liquid device may further include an atmosphere communication pipe that connects the inside of the treatment liquid tank to the atmosphere, and the pressure adjustment unit includes an atmosphere on-off valve for opening and closing the atmosphere communication pipe.
根據該構成,藉由打開大氣開閉閥而打開大氣連通配管,可使處理液槽之內部大氣開放。因此,可利用簡單之構造來實現能使處理液槽之內部大氣開放之構成。 According to this configuration, the atmosphere inside the processing liquid tank can be opened by opening the atmosphere on-off valve to open the atmosphere communication piping. Therefore, it is possible to realize a structure capable of opening the atmosphere inside the processing liquid tank with a simple structure.
於上述大氣連通配管亦可設置有孔口。於該情形時,由於孔口被設置於大氣連通配管,因此氣體難以通過大氣連通配管之內部。因此,即使打開大氣連通配管,處理液槽之內部也不會一口氣地減壓,而是該內部之壓力會花費某種程度之時間而逐漸地降低。因此,可利用簡單之構造來實現能使處理液槽之內部逐漸地大氣開放之構成。 An orifice may also be provided in the above atmospheric communication piping. In this case, since the orifice is provided in the atmospheric communication pipe, it is difficult for the gas to pass through the interior of the atmospheric communication pipe. Therefore, even if the atmosphere communication piping is opened, the inside of the treatment liquid tank will not be decompressed at one go, but the pressure inside will gradually decrease to some extent. Therefore, it is possible to realize a structure capable of gradually opening the inside of the processing liquid tank with a simple structure.
上述處理液裝置亦可進一步包含有連通上述處理液槽之內部與大氣之大氣連通配管,上述壓力調整單元包含有調整上述大氣連通配管之開度之開度調整單元。 The treatment liquid device may further include an atmosphere communication pipe that connects the inside of the treatment liquid tank to the atmosphere, and the pressure adjustment unit includes an opening degree adjustment unit that adjusts the opening degree of the atmosphere communication pipe.
根據該構成,藉由調整大氣連通配管之開度,可調整大氣連通配管內部之氣體的通過容易度。因此,於處理液槽之內部之大氣開放時,藉由將大氣連通配管之開度設為較低,可使對處理液槽之內部進行大氣開放開始起至該內部減壓至大氣壓為止之時間變長。因此,可利用簡單之構造來實現能使處理液槽之內部逐漸地大氣開放之構成。 According to this configuration, by adjusting the opening degree of the atmospheric communication pipe, the ease of passage of the gas inside the atmospheric communication pipe can be adjusted. Therefore, when the atmosphere inside the processing liquid tank is opened, by setting the opening degree of the atmosphere communication piping to be low, the time from when the atmosphere inside the processing liquid tank is opened to when the pressure in the interior is reduced to atmospheric pressure lengthen. Therefore, it is possible to realize a structure capable of gradually opening the inside of the processing liquid tank with a simple structure.
上述處理液槽亦可設置有複數個,上述第1處理液配管包含有被連接至各處理液槽之個別配管、及連接上述複數個個別配管之各者與上述處理單元之共通配管,上述開閉單元包含有對各個別配管進行開閉之個別開閉閥、及對上述共通配管進行開閉之共通開閉閥。 The processing liquid tank may be provided with a plurality of the first processing liquid piping including an individual pipe connected to each processing liquid tank, and a common pipe connecting each of the plurality of individual pipes with the processing unit, and the opening and closing The unit includes an individual on-off valve that opens and closes each individual piping, and a common on-off valve that opens and closes the above-mentioned common piping.
根據該構成,於處理液自處理液供給裝置朝向處理單元之供給停止時,控制裝置於共通開閉閥及個別開閉閥關閉之前使處於加壓狀態之處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉開閉單元。藉此,即使為設置複數個處理液槽之情形時,仍可減低於處理液所產生之氣泡量。 According to this configuration, when the supply of the processing liquid from the processing liquid supply device toward the processing unit is stopped, the control device gradually opens the inside of the processing liquid tank in the pressurized state before the common on-off valve and the individual on-off valve are closed. The opening and closing unit is closed after the opening of the atmosphere. In this way, even when a plurality of processing liquid tanks are provided, the amount of bubbles generated by the processing liquid can be reduced.
被貯存於上述處理液槽之處理液亦可包含有有機溶劑。 The processing liquid stored in the processing liquid tank may contain an organic solvent.
於使用有機溶劑作為處理液之情形時,有機溶劑其大部分為易燃性液體,無法藉由泵壓送方式來輸送有機溶劑,而使用前述之加壓單元,來進行有機溶劑對於處理單元之輸送(加壓壓送方式)。於該情形時,可減低處理液供給裝置供給之有機溶劑所包含之氣泡量。 In the case of using organic solvents as the processing liquid, most of the organic solvents are flammable liquids, and the organic solvent cannot be conveyed by pumping and pumping. Instead, use the aforementioned pressurized unit to carry out the organic solvent to the processing unit. Conveying (pressure and pressure feeding method). In this case, the amount of bubbles contained in the organic solvent supplied by the processing liquid supply device can be reduced.
又,本發明提供一種基板處理系統,其包含對基板實施 使用處理液之處理之處理單元、及上述處理液供給裝置,上述處理單元包含有:吐出部,其用以吐出應供給至上述基板之處理液;第2處理液配管,其連接上述第1處理液配管與上述吐出部;及處理液閥,其用以開閉上述第2處理液配管;上述控制裝置為了停止處理液自上述處理液配管對上述吐出部之供給,而關閉上述處理液閥,然後控制上述壓力調整單元使上述處理液槽之內部減壓。 In addition, the present invention provides a substrate processing system including a substrate A processing unit for processing using a processing liquid, and the processing liquid supply device, the processing unit includes: a discharge section for discharging a processing liquid to be supplied to the substrate; a second processing liquid pipe connected to the first processing A liquid piping and the discharge part; and a processing liquid valve for opening and closing the second processing liquid pipe; the control device closes the processing liquid valve in order to stop the supply of processing liquid from the processing liquid pipe to the discharge part, and The pressure adjusting unit is controlled to decompress the inside of the processing liquid tank.
根據該構成,於處理液來自吐出部之吐出停止時,控制裝置首先關閉處理液閥而停止處理液自處理液配管對吐出部之供給,接著使處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉上述開閉單元。 According to this configuration, when the discharge of the processing liquid from the discharge portion is stopped, the control device first closes the processing liquid valve to stop the supply of the processing liquid from the processing liquid piping to the discharge portion, and then gradually opens the inside of the processing liquid tank to the atmosphere, and After the opening of the atmosphere, the opening and closing unit is closed.
由於在處理液槽內部之減壓開始後關閉開閉單元,因此於關閉開閉單元之後,處理液槽之內部及第1處理液配管之內部便被維持為較上述加壓狀態更減壓之狀態。由於氣體對液體之溶解度與其壓力成比例,因此在處於該減壓狀態之處理液配管之內部,並不會有較大量之氣體溶入。因此,可減低溶入處理液槽之內部及第1處理液配管之內部之處理液的溶存氣體量。由於處理液之溶存氣體量較少,因此可減低在處理液中所產生之氣泡量。 Since the opening and closing unit is closed after the decompression inside the processing liquid tank is started, after closing the opening and closing unit, the inside of the processing liquid tank and the inside of the first processing liquid pipe are maintained in a more decompressed state than the pressurized state. Since the solubility of the gas in the liquid is proportional to its pressure, no large amount of gas will dissolve inside the processing liquid piping in this reduced pressure state. Therefore, it is possible to reduce the amount of dissolved gas in the processing liquid dissolved into the processing liquid tank and the first processing liquid piping. Since the amount of dissolved gas in the treatment liquid is small, the amount of bubbles generated in the treatment liquid can be reduced.
又,由於逐漸地進行處理液槽之內部之大氣開放,因此亦可抑制或防止溶入於處理液之氣體在該減壓過程中作為氣泡而出現之情形。 In addition, since the atmosphere inside the processing liquid tank is gradually opened, it is possible to suppress or prevent the gas dissolved in the processing liquid from appearing as bubbles during the depressurization process.
藉此,可減低被供給至處理單元之處理液所包含之氣泡量。藉此,可提供能抑制或防止在基板上產生微粒之基板處理系統。 By this, the amount of bubbles contained in the processing liquid supplied to the processing unit can be reduced. Thereby, a substrate processing system capable of suppressing or preventing the generation of particles on the substrate can be provided.
在本發明一實施形態中,上述處理液閥亦可被配置於較上述開閉單元更上方。於該情形時,在將開閉單元配置於較處理液閥 更下方之情形,為了使被貯存於處理液槽之處理液抵達處理單元,需要利用更高壓來壓送處理液槽之內部之處理液。於該情形時,供給時處理液槽及第1處理液配管之內部之壓力變得更高,其結果,會有使前述產生氣泡之問題進一步顯著化之可能性。 In one embodiment of the present invention, the processing liquid valve may be disposed above the opening and closing unit. In this case, when the opening / closing unit is arranged at the lower processing liquid valve In the lower case, in order for the processing liquid stored in the processing liquid tank to reach the processing unit, it is necessary to use a higher pressure to pressurize the processing liquid inside the processing liquid tank. In this case, the pressure inside the processing liquid tank and the first processing liquid piping becomes higher at the time of supply, and as a result, there is a possibility that the above-mentioned problem of generating bubbles is further conspicuous.
然而,由於使處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉開閉單元,因此可更進一步減低被供給至處理單元之處理液所包含之氣泡量,藉此,可更進一步抑制或防止基板上微粒之產生。 However, since the inside of the processing liquid tank is gradually opened to the atmosphere, and the opening and closing unit is closed after the opening of the atmosphere, the amount of bubbles included in the processing liquid supplied to the processing unit can be further reduced, thereby further suppressing Or prevent the generation of particles on the substrate.
上述處理液供給裝置亦可被配置於較上述處理單元更下層。 The processing liquid supply device may be disposed below the processing unit.
根據該構成,由於將處理液供給裝置設置於下層,因此第1處理液配管之配管長度會變長。因此,於第1處理液配管之內部局部地存在有高壓之部分,藉此,亦存在有使前述產生氣泡之問題進一步顯著化之可能性。 According to this configuration, since the processing liquid supply device is provided in the lower layer, the length of the first processing liquid piping becomes longer. Therefore, there is a high-pressure part locally inside the first processing liquid piping, and there is a possibility that the aforementioned problem of generating bubbles may be further conspicuous.
然而,由於使處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉開閉單元,因此可更進一步減低被供給至處理單元之處理液所包含之氣泡量,藉此,可更進一步抑制或防止基板上微粒之產生。 However, since the inside of the processing liquid tank is gradually opened to the atmosphere, and the opening and closing unit is closed after the opening of the atmosphere, the amount of bubbles included in the processing liquid supplied to the processing unit can be further reduced, thereby further suppressing Or prevent the generation of particles on the substrate.
又,本發明提供一種處理液供給方法,係於處理液供給裝置中所執行者,上述處理液供給裝置包含有:處理液槽,其貯存處理液;第1處理液配管,其連接對基板實施使用處理液之處理之處理單元與上述處理液槽;開閉單元,其用以開閉上述第1處理液配管;及加壓單元,其利用氣體對上述處理液槽之內部之處理液進行加壓,藉此使該處理液移動至上述第1處理液配管;其中,為了停止處理液 自上述處理液供給裝置朝向上述處理單元之供給,而使處於加壓狀態之上述處理液槽之內部逐漸地大氣開放,並於該大氣開放開始後關閉上述開閉單元。 In addition, the present invention provides a processing liquid supply method implemented by a processing liquid supply device, the processing liquid supply device including: a processing liquid tank that stores a processing liquid; and a first processing liquid pipe connected to a substrate A processing unit for processing using a processing liquid and the processing liquid tank; an opening and closing unit for opening and closing the first processing liquid piping; and a pressurizing unit for pressurizing the processing liquid inside the processing liquid tank with a gas, By this, the processing liquid is moved to the above-mentioned first processing liquid piping; wherein, in order to stop the processing liquid From the supply of the processing liquid supply device to the processing unit, the inside of the processing liquid tank in a pressurized state is gradually opened to the atmosphere, and the opening and closing unit is closed after the opening of the atmosphere is started.
根據本方法,於處理液自處理液供給裝置朝向處理單元之供給停止時,控制裝置於開閉單元關閉之前,使因加壓單元而處於加壓狀態之處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉上述開閉單元。由於在處理液槽內部之減壓開始後關閉開閉單元,因此於關閉開閉單元之後,處理液槽之內部及第1處理液配管之內部便被維持為較前述之加壓狀態更減壓之狀態。由於氣體對液體之溶解度與其壓力成比例,因此在處於該減壓狀態之處理液配管之內部,並不會有較大量之氣體溶入。因此,可減低溶入處理液槽之內部及第1處理液配管之內部之處理液的溶存氣體量。由於處理液之溶存氣體量較少,因此可減低在處理液中所產生之氣泡量。 According to this method, when the supply of the processing liquid from the processing liquid supply device to the processing unit is stopped, the control device gradually opens the atmosphere of the processing liquid tank pressurized by the pressurization unit before the opening and closing unit is closed, and Close the opening and closing unit after the opening of the atmosphere. Since the opening / closing unit is closed after the decompression inside the processing liquid tank is started, after closing the opening / closing unit, the inside of the processing liquid tank and the inside of the first processing liquid piping are maintained at a more decompressed state than the aforementioned pressurized state . Since the solubility of the gas in the liquid is proportional to its pressure, no large amount of gas will dissolve inside the processing liquid piping in this reduced pressure state. Therefore, it is possible to reduce the amount of dissolved gas in the processing liquid dissolved into the processing liquid tank and the first processing liquid piping. Since the amount of dissolved gas in the treatment liquid is small, the amount of bubbles generated in the treatment liquid can be reduced.
又,由於逐漸地進行處理液槽之內部之大氣開放,因此亦可抑制或防止溶入於處理液之氣體在該減壓過程中作為氣泡而出現之情形。 In addition, since the atmosphere inside the processing liquid tank is gradually opened, it is possible to suppress or prevent the gas dissolved in the processing liquid from appearing as bubbles during the depressurization process.
藉此,可提供能減低供給之處理液所包含之氣泡量之處理液供給方法。 Thereby, a processing liquid supply method capable of reducing the amount of bubbles contained in the supplied processing liquid can be provided.
本發明前述之目的或其他之目的、特徵及效果,係藉由參照隨附圖式且進行如下所述之實施形態之說明而明確。 The aforementioned object or other objects, features, and effects of the present invention will be made clear by referring to the accompanying drawings and describing the following embodiments.
1‧‧‧基板處理系統 1‧‧‧Substrate processing system
2‧‧‧處理單元 2‧‧‧Processing unit
3‧‧‧有機溶劑供給裝置 3‧‧‧Organic solvent supply device
4‧‧‧基板處理裝置 4‧‧‧Substrate processing device
5‧‧‧第1控制裝置 5‧‧‧The first control device
6‧‧‧第2控制裝置 6‧‧‧The second control device
7‧‧‧處理腔室 7‧‧‧Process chamber
8‧‧‧有機溶劑噴嘴 8‧‧‧Organic solvent nozzle
9‧‧‧有機溶劑槽 9‧‧‧Organic solvent tank
10‧‧‧有機溶劑個別配管 10‧‧‧Individual piping of organic solvent
11‧‧‧有機溶劑共通配管 11‧‧‧Common piping for organic solvents
12‧‧‧流量計 12‧‧‧Flowmeter
13‧‧‧共通開閉閥 13‧‧‧Common on-off valve
14‧‧‧個別開閉閥 14‧‧‧Individual opening and closing valve
15‧‧‧加壓單元 15‧‧‧Pressure unit
16‧‧‧壓力計 16‧‧‧pressure gauge
17‧‧‧大氣連通配管 17‧‧‧Atmospheric connection piping
18‧‧‧大氣開閉閥 18‧‧‧Atmospheric opening and closing valve
19‧‧‧固定孔口 19‧‧‧Fixed orifice
20‧‧‧加壓氣體配管 20‧‧‧Pressure gas piping
21‧‧‧加壓閥 21‧‧‧Pressure valve
22‧‧‧處理側配管 22‧‧‧Process side piping
23‧‧‧處理側共通配管 23‧‧‧ Common piping on the processing side
24‧‧‧處理側分支配管 24‧‧‧Process side branch piping
25‧‧‧有機溶劑閥 25‧‧‧Organic solvent valve
26‧‧‧旋轉夾頭 26‧‧‧Rotating chuck
27‧‧‧藥液噴嘴 27‧‧‧Medicinal liquid nozzle
28‧‧‧沖洗液噴嘴 28‧‧‧Flushing fluid nozzle
29‧‧‧旋轉基座 29‧‧‧rotating base
30‧‧‧旋轉驅動單元 30‧‧‧Rotary drive unit
31‧‧‧藥液閥 31‧‧‧Medicine valve
32‧‧‧藥液配管 32‧‧‧Pharmaceutical piping
33‧‧‧沖洗液閥 33‧‧‧Flush valve
34‧‧‧沖洗液配管 34‧‧‧Flushing fluid piping
41‧‧‧液膜 41‧‧‧Liquid film
42‧‧‧異物 42‧‧‧foreign
43‧‧‧氣泡 43‧‧‧Bubble
103‧‧‧有機溶劑供給裝置 103‧‧‧ Organic solvent supply device
106‧‧‧第3控制裝置 106‧‧‧The third control device
218‧‧‧開度調整單元 218‧‧‧ opening adjustment unit
D‧‧‧延遲 D‧‧‧delay
W‧‧‧基板 W‧‧‧Substrate
圖1係顯示本發明一實施形態之基板處理系統之構成之示意圖。 FIG. 1 is a schematic diagram showing the structure of a substrate processing system according to an embodiment of the present invention.
圖2係自水平方向觀察上述基板處理系統所具備之處理單元之內 部之示意圖。 Fig. 2 is a horizontal view of the processing unit of the substrate processing system Schematic diagram of the Ministry.
圖3係顯示在上述基板處理裝置中所執行之吐出停止控制之流程圖。 FIG. 3 is a flowchart showing the discharge stop control executed in the above substrate processing apparatus.
圖4係顯示在有機溶劑供給裝置中所執行之吐出停止控制之流程圖。 4 is a flowchart showing the discharge stop control executed in the organic solvent supply device.
圖5係顯示基板處理系統中吐出停止控制之有機溶劑閥、共通開閉閥、個別開閉閥及大氣開閉閥之開閉狀態,暨壓力計之測量值之時機圖。 Fig. 5 is a diagram showing the opening and closing states of the organic solvent valve, common on-off valve, individual on-off valve, and atmospheric on-off valve in the substrate processing system, and the timing of the measured value of the pressure gauge.
圖6係顯示自有機溶劑槽內部之大氣開放開始至大氣開放為止之減壓狀況之圖。 FIG. 6 is a graph showing the decompression status from the opening of the atmosphere inside the organic solvent tank to the opening of the atmosphere.
圖7係顯示有機溶劑之液膜所包含微小的異物在基板表面上之狀態之圖。 FIG. 7 is a diagram showing the state of minute foreign substances contained in a liquid film of an organic solvent on a substrate surface.
圖8係顯示另一形態之基板處理系統之構成之示意圖。 FIG. 8 is a schematic diagram showing the configuration of another form of substrate processing system.
圖9係顯示本發明之變形例之圖。 9 is a diagram showing a modification of the present invention.
圖1係自水平方向觀察本發明一實施形態之基板處理系統1之示意圖。基板處理系統1係對作為基板W之一例之半導體晶圓一次一片地進行處理之單片式系統。基板處理系統1包含有:處理單元2,其對基板W進行處理;及有機溶劑供給裝置3,其係對該處理單元2供給作為處理液之一例之有機溶劑之處理液供給裝置。處理單元2及有機溶劑供給裝置3係相互獨立之單元(可使其等相互獨立地移動之單元)。亦即,如圖1所示,基板處理系統1係例示為具備有:基板處理裝置4,其包含處理單元2;及有機溶劑供給裝置3,其係配置於離開基板處理裝置4之位置。基板處理裝置4係設置於無塵室,另 一方面,有機溶劑供給裝置3係設置於被稱為設備放置區(sub-fab)之、無塵室之下層空間(例如地下層)。基板處理系統1進一步包含有:第1控制裝置5,其對基板處理裝置4所具備之裝置或閥之開閉進行控制;及第2控制裝置6,其對有機溶劑供給裝置3所具備之裝置或閥之開閉進行控制。 FIG. 1 is a schematic diagram of a substrate processing system 1 according to an embodiment of the present invention viewed from a horizontal direction. The substrate processing system 1 is a monolithic system that processes a semiconductor wafer as an example of the substrate W one piece at a time. The substrate processing system 1 includes: a processing unit 2 that processes the substrate W; and an organic solvent supply device 3 that is a processing liquid supply device that supplies an organic solvent as an example of a processing liquid to the processing unit 2. The processing unit 2 and the organic solvent supply device 3 are independent units (units that can be moved independently of each other). That is, as shown in FIG. 1, the substrate processing system 1 is exemplified as including: a substrate processing device 4 including a processing unit 2; and an organic solvent supply device 3 arranged at a position away from the substrate processing device 4. The substrate processing device 4 is installed in a clean room, and another On the one hand, the organic solvent supply device 3 is provided in a space below the clean room (for example, underground) called a sub-fab. The substrate processing system 1 further includes: a first control device 5 that controls the opening and closing of devices or valves provided in the substrate processing device 4; and a second control device 6 that controls the devices or devices provided in the organic solvent supply device 3 or Control the opening and closing of the valve.
又,處理單元2既可為對基板W一次一片地進行處理之單片式單元,亦可為對複數片基板W一次性地進行處理之批次式單元。圖1係顯示處理單元2為單片式單元之例。又,在圖1中,雖圖示有機溶劑供給裝置3僅有1個,但於設有複數種有機溶劑之情形時,亦可設置對應於其液體種類之數量的有機溶劑供給裝置3。 Furthermore, the processing unit 2 may be a single-chip unit that processes the substrate W one at a time, or a batch-type unit that processes a plurality of substrates W at a time. FIG. 1 shows an example in which the processing unit 2 is a monolithic unit. In addition, in FIG. 1, although only one organic solvent supply device 3 is shown, when a plurality of organic solvents are provided, an organic solvent supply device 3 corresponding to the number of liquid types may be provided.
處理單元2包含有:箱形之處理腔室7,其具有內部空間;有機溶劑噴嘴(吐出部)8,其用以將有機溶劑供給至在處理腔室7內被保持為水平姿勢之基板W(參照圖2)。在該實施形態中,處理單元2係設置有複數個。複數個處理單元係如圖1所示般被配置為例如三層構造,且在圖1中雖省略圖示,但於各層部分例如配置有4個處理單元。在該實施形態中,該處理單元2雖列舉有機溶劑供給裝置3對應於共12個處理單元2而將藥液供給至該等所有之處理單元2者為例,但亦可為,有機溶劑供給裝置3對應於一部分之處理單元2之各者(例如被疊層於縱向上之3個處理單元2之各者)而將藥液供給至該一部分之處理單元2者。 The processing unit 2 includes a box-shaped processing chamber 7 having an internal space, and an organic solvent nozzle (discharge section) 8 for supplying organic solvent to the substrate W held in a horizontal posture in the processing chamber 7 (See Figure 2). In this embodiment, a plurality of processing units 2 are provided. The plurality of processing units are arranged in a three-layer structure as shown in FIG. 1, for example. Although not shown in FIG. 1, for example, four processing units are arranged in each layer portion. In this embodiment, the processing unit 2 is an example in which the organic solvent supply device 3 supplies a total of twelve processing units 2 and supplies the chemical solution to all of the processing units 2, but it may also be an organic solvent supply. The device 3 corresponds to each of a part of the processing units 2 (for example, each of the three processing units 2 stacked in the longitudinal direction) and supplies the chemical solution to the part of the processing units 2.
有機溶劑供給裝置3包含有:複數個(在圖1中例如為2個)有機溶劑槽(處理液槽)9,其貯存有機溶劑;有機溶劑個別配管(個別配管)10,其係連接於各有機溶劑槽9;及有機溶劑共通配管(共通配管)11,其連接複數個(在圖1中例如為2個)有機溶劑個別配管10之各 者與處理單元2側。被貯存於有機溶劑槽9之有機溶劑例如為IPA(異丙醇;Isopropyl Alcohol)。於各有機溶劑個別配管10介設有對有機溶劑個別配管10進行開閉之個別開閉閥(開閉單元)14。於有機溶劑共通配管11,自有機溶劑槽9側起依序介設有用以測量流通於有機溶劑共通配管11之有機溶劑之流量的流量計12、及對有機溶劑共通配管11進行開閉之共通開閉閥(開閉單元)13。有機溶劑個別配管10及有機溶劑共通配管11係使用PFA(四氟乙烯-全氟烷氧基乙烯基醚共聚物;perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer)等具有耐藥性之樹脂所形成。藉由有機溶劑個別配管10與有機溶劑共通配管11,構成有第1處理液配管。 The organic solvent supply device 3 includes: a plurality of (for example, two in FIG. 1) organic solvent tanks (processing liquid tanks) 9 that store organic solvents; organic solvent individual piping (individual piping) 10, which is connected to each Organic solvent tank 9; and organic solvent common piping (common piping) 11, which connects a plurality of (for example, 2 in FIG. 1) each of the individual pipes of the organic solvent 10 And the processing unit 2 side. The organic solvent stored in the organic solvent tank 9 is, for example, IPA (isopropyl alcohol; Isopropyl Alcohol). An individual on-off valve (opening and closing unit) 14 for opening and closing the organic solvent individual piping 10 is interposed in each organic solvent individual piping 10. In the organic solvent common piping 11, a flow meter 12 for measuring the flow rate of the organic solvent flowing through the organic solvent common piping 11 is sequentially provided from the organic solvent tank 9 side, and common opening and closing for opening and closing the organic solvent common piping 11 Valve (opening and closing unit) 13. Organic solvent individual piping 10 and organic solvent common piping 11 use resin-resistant resins such as PFA (tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer; perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer) form. The first processing liquid piping is constituted by the organic solvent individual piping 10 and the organic solvent common piping 11.
有機溶劑供給裝置3係加壓壓送方式之液體供給裝置。因此,有機溶劑供給裝置3進一步具備有:加壓單元15,其使有機溶劑槽9內之有機溶劑經由有機溶劑個別配管10移動至有機溶劑共通配管11;壓力計16,其用以測量有機溶劑槽9內部之壓力;新液供給單元(未圖示),其將來自有機溶劑供給源之有機溶劑的新液供給至有機溶劑槽9;及液量感測器(未圖示),其用以檢測被貯存於有機溶劑槽9內部之液量(例如液面水平)。加壓單元15、壓力計16、新液供給單元及液量感測器係於每個有機溶劑槽9各設置1個。由於IPA為易燃性液體,因此於採用泵壓送方式之情形時,必須實施防爆對策等。為了謀求裝置之簡化,有機溶劑供給裝置3係採用加壓壓送方式。 The organic solvent supply device 3 is a liquid supply device of a pressure and pressure feeding method. Therefore, the organic solvent supply device 3 further includes: a pressurizing unit 15 that moves the organic solvent in the organic solvent tank 9 to the organic solvent common piping 11 via the individual organic solvent piping 10; and a pressure gauge 16, which measures the organic solvent The pressure inside the tank 9; a new liquid supply unit (not shown), which supplies the new liquid of the organic solvent from the organic solvent supply source to the organic solvent tank 9; and a liquid volume sensor (not shown), which is used to The amount of liquid (for example, liquid level) stored in the organic solvent tank 9 is detected. One pressurizing unit 15, a pressure gauge 16, a new liquid supply unit, and a liquid volume sensor are provided for each organic solvent tank 9. Since IPA is a flammable liquid, it is necessary to implement anti-explosion countermeasures when using the pumping method. In order to simplify the device, the organic solvent supply device 3 adopts a pressurized pressure feeding method.
又,有機溶劑供給裝置3進一步具備有:大氣連通配管17,其連通有機溶劑槽9之內部與大氣;及大氣開閉閥(壓力調整單元)18,其對各大氣連通配管17進行開閉。大氣連通配管17及大氣開閉閥18係設置於每個有機溶劑槽9。於大氣連通配管17,在大氣開閉 閥18之下游側(大氣側)設置有固定孔口(孔口)19。 In addition, the organic solvent supply device 3 further includes: an atmospheric communication pipe 17 that communicates the inside of the organic solvent tank 9 with the atmosphere; and an atmospheric opening and closing valve (pressure adjustment unit) 18 that opens and closes each atmospheric communication pipe 17. The atmospheric communication piping 17 and the atmospheric opening and closing valve 18 are provided in each organic solvent tank 9. Connect the piping 17 to the atmosphere, open and close in the atmosphere A fixed orifice (orifice) 19 is provided on the downstream side (atmosphere side) of the valve 18.
各加壓單元15包含有:加壓氣體配管20,其流通有加壓用之高壓氣體(例如氮氣等之惰性氣體);及加壓閥21,其對加壓氣體配管20進行開閉。藉由打開加壓閥21,來自加壓氣體配管20之高壓氣體便被供給至有機溶劑槽9。在該供給狀態下,有機溶劑槽9內部之壓力、及與該有機溶劑槽9對應之配管10、11內部之壓力係保持為高壓(在該實施形態下,例如為2氣壓左右)。 Each pressurizing unit 15 includes a pressurized gas piping 20 through which high-pressure gas for pressurization (for example, an inert gas such as nitrogen) flows, and a pressurizing valve 21 that opens and closes the pressurized gas piping 20. By opening the pressurizing valve 21, the high-pressure gas from the pressurized gas piping 20 is supplied to the organic solvent tank 9. In this supply state, the pressure inside the organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the organic solvent tank 9 are maintained at a high pressure (in this embodiment, for example, about 2 atm).
各有機溶劑槽9係藉由間隔壁而被區隔為容器狀。有機溶劑槽9之間隔壁例如使用不鏽鋼而形成,其整個內表面係使用PTFE(聚四氟乙烯;polytetra-fluoro ethylene)加以塗佈。各有機溶劑槽9之容量為數公升~數十公升。 Each organic solvent tank 9 is partitioned into a container shape by a partition wall. The partition wall of the organic solvent tank 9 is formed of, for example, stainless steel, and its entire inner surface is coated with PTFE (polytetra-fluoroethylene). The capacity of each organic solvent tank 9 is several liters to several tens of liters.
有機溶劑係自複數個有機溶劑槽9中所選擇之1個有機溶劑槽9被供給至處理單元2側。而且,若貯存於使用中之一有機溶劑槽9之有機溶劑用完,有機溶劑之供給來源便被切換為另一有機溶劑槽9,而使貯存於該另一有機溶劑槽9之有機溶劑被供給至處理單元2側。 The organic solvent is supplied from one organic solvent tank 9 selected from the plurality of organic solvent tanks 9 to the processing unit 2 side. Moreover, if the organic solvent stored in one of the organic solvent tanks 9 in use is used up, the supply source of the organic solvent is switched to another organic solvent tank 9, and the organic solvent stored in the other organic solvent tank 9 is It is supplied to the processing unit 2 side.
此時,可自新液供給單元(未圖示)將有機溶劑之新液供給至變空之有機溶劑槽9(一有機溶劑槽9)。再者,由於處於加壓狀態之有機溶劑槽9之內部呈高壓狀態,因此於該有機溶劑之供給之前,打開與一有機溶劑槽9對應之大氣開閉閥18,而將該一有機溶劑槽9之內部自高壓狀態減壓至大氣壓,藉此可進行有機溶劑之新液朝向有機溶劑槽9之供給。 At this time, the new liquid of the organic solvent can be supplied from the new liquid supply unit (not shown) to the emptied organic solvent tank 9 (one organic solvent tank 9). Furthermore, since the inside of the pressurized organic solvent tank 9 is in a high-pressure state, before the supply of the organic solvent, the atmospheric on-off valve 18 corresponding to an organic solvent tank 9 is opened, and the organic solvent tank 9 The inside of the inside is depressurized from the high-pressure state to the atmospheric pressure, whereby new liquid of the organic solvent can be supplied toward the organic solvent tank 9.
有機溶劑之供給來源的切換,係藉由對被介設於各有機溶劑個別配管10之個別開閉閥14進行開閉而進行。亦即,個別開閉 閥14係作為用以切換供給來源之有機溶劑槽9之切換用閥而發揮功能。 The supply source of the organic solvent is switched by opening and closing the individual on-off valve 14 interposed in the individual piping 10 of each organic solvent. That is, individual opening and closing The valve 14 functions as a switching valve for switching the organic solvent tank 9 of the supply source.
第2控制裝置6例如使用微電腦而構成。第2控制裝置6具有CPU(中央處理單元)等之運算單元、固定記憶體裝置、硬式磁碟機等之儲存單元、及輸出輸入單元。於儲存單元記憶有供運算單元執行之程式。 The second control device 6 is configured using a microcomputer, for example. The second control device 6 includes an arithmetic unit such as a CPU (Central Processing Unit), a storage unit such as a fixed memory device, a hard disk drive, and an input / output unit. The storage unit memorizes a program for the operation unit to execute.
第2控制裝置6係依據預先被設定於儲存單元之程式,而對共通開閉閥13、個別開閉閥14、大氣開閉閥18、加壓閥21等進行開閉。又,流量計12及壓力計16之檢測輸出被輸入至第2控制裝置6。 The second control device 6 opens and closes the common on-off valve 13, the individual on-off valve 14, the atmospheric on-off valve 18, the pressurizing valve 21, etc. according to a program previously set in the storage unit. In addition, the detection outputs of the flowmeter 12 and the pressure gauge 16 are input to the second control device 6.
於將貯存於一有機溶劑槽9之有機溶劑供給至處理單元2側時,第2控制裝置6在關閉與另一有機溶劑槽9對應之個別開閉閥14之狀態下,打開與一有機溶劑槽9對應之個別開閉閥14,且打開共通開閉閥13。又,第2控制裝置6打開與一有機溶劑槽9對應之加壓閥21。藉此,高壓氣體被供給至一有機溶劑槽9,並藉由此時之供給壓(氮壓),使貯存於一有機溶劑槽9之有機溶劑被壓送出相對應之有機溶劑個別配管10,經由該有機溶劑個別配管10而被移動至有機溶劑共通配管11。藉此,有機溶劑自有機溶劑供給裝置3朝向處理單元2被供給。在該有機溶劑之供給狀態下,一有機溶劑槽9內部之壓力、及與該一有機溶劑槽9對應之配管10、11內部之壓力,被保持為高壓(例如為2氣壓左右)。 When the organic solvent stored in an organic solvent tank 9 is supplied to the processing unit 2 side, the second control device 6 opens the organic solvent tank while closing the individual on-off valve 14 corresponding to the other organic solvent tank 9 9 corresponds to the individual on-off valve 14, and the common on-off valve 13 is opened. Furthermore, the second control device 6 opens the pressurizing valve 21 corresponding to an organic solvent tank 9. By this, the high-pressure gas is supplied to an organic solvent tank 9, and by this supply pressure (nitrogen pressure), the organic solvent stored in an organic solvent tank 9 is sent out to the corresponding organic solvent individual piping 10, The organic solvent individual piping 10 moves to the organic solvent common piping 11. With this, the organic solvent is supplied from the organic solvent supply device 3 toward the processing unit 2. In the supply state of the organic solvent, the pressure inside the organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the organic solvent tank 9 are maintained at a high pressure (for example, about 2 atmospheres).
又,於將貯存於另一有機溶劑槽9之有機溶劑供給至處理單元2側時,第2控制裝置6在關閉與一有機溶劑槽9對應之個別開閉閥14之狀態下,打開與另一有機溶劑槽9對應之個別開閉閥14,且打開共通開閉閥13。又,第2控制裝置6打開與另一有機溶劑槽9 對應之加壓閥21。藉此,高壓氣體被供給至另一有機溶劑槽9,並藉由此時之供給壓(氮壓),使貯存於另一有機溶劑槽9之有機溶劑被壓送出相對應之有機溶劑個別配管10,經由該有機溶劑個別配管10而被移動至有機溶劑共通配管11。藉此,有機溶劑自有機溶劑供給裝置3朝向處理單元2側被供給。在該有機溶劑之供給狀態下,另一有機溶劑槽9內部之壓力、及與該另一有機溶劑槽9對應之配管10、11內部之壓力,被保持為高壓(例如為2氣壓左右)。 In addition, when the organic solvent stored in the other organic solvent tank 9 is supplied to the processing unit 2 side, the second control device 6 opens and closes the other with the individual on-off valve 14 corresponding to the one organic solvent tank 9 closed. The individual on-off valve 14 corresponding to the organic solvent tank 9 opens the common on-off valve 13. Also, the second control device 6 opens the tank 9 with another organic solvent Corresponding to the pressure valve 21. By this, the high-pressure gas is supplied to the other organic solvent tank 9, and by this supply pressure (nitrogen pressure), the organic solvent stored in the other organic solvent tank 9 is pressed out of the corresponding organic solvent individual piping 10, moved to the organic solvent common piping 11 via the organic solvent individual piping 10. With this, the organic solvent is supplied from the organic solvent supply device 3 toward the processing unit 2 side. In the supply state of the organic solvent, the pressure inside the other organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the other organic solvent tank 9 are maintained at a high pressure (for example, about 2 atm).
再者,在以下之說明中,將對處理單元2側進行有機溶劑供給中之有機溶劑槽9,稱為「現在之有機溶劑槽9」。 In addition, in the following description, the organic solvent tank 9 which supplies the organic solvent to the processing unit 2 side is called "the current organic solvent tank 9".
來自有機溶劑供給裝置3之有機溶劑,係經由通過基板處理裝置4內部之處理側配管(第2處理液配管)22而被供給至各處理單元2所包含之有機溶劑噴嘴8。處理側配管22包含有:處理側共通配管23,其係連接於有機溶劑共通配管11;及處理側分支配管24,其連接各有機溶劑噴嘴8與處理側共通配管23。於處理側分支配管24,介設有用以對處理側分支配管24進行開閉之有機溶劑閥25。在有機溶劑自有機溶劑供給裝置3朝向處理單元2側被供給之狀態下,藉由第2控制裝置6打開有機溶劑閥25,使有機溶劑被供給至各處理單元2所包含之有機溶劑噴嘴8。又,處理側共通配管23及處理側分支配管24係使用PFA(四氟乙烯-全氟烷氧基乙烯基醚共聚物;perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer)等具有耐藥性之樹脂而形成。 The organic solvent from the organic solvent supply device 3 is supplied to the organic solvent nozzle 8 included in each processing unit 2 through the processing-side piping (second processing liquid piping) 22 passing through the inside of the substrate processing device 4. The processing-side piping 22 includes a processing-side common piping 23 that is connected to the organic solvent common piping 11 and a processing-side branch piping 24 that connects each organic solvent nozzle 8 to the processing-side common piping 23. An organic solvent valve 25 for opening and closing the processing-side branch piping 24 is interposed in the processing-side branch piping 24. In a state where the organic solvent is supplied from the organic solvent supply device 3 toward the processing unit 2 side, the organic solvent valve 25 is opened by the second control device 6 so that the organic solvent is supplied to the organic solvent nozzle 8 included in each processing unit 2 . In addition, the common piping 23 on the processing side and the branch piping 24 on the processing side use PFA (tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer; perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer), etc. Resin.
圖2係朝水平方向觀察處理單元2之內部之示意圖。 FIG. 2 is a schematic view of the inside of the processing unit 2 viewed horizontally.
處理單元2進一步包含有:旋轉夾頭26,其在處理腔室7內以水平姿勢保持一片基板W,並使基板W繞通過基板W中心之鉛 垂的旋轉軸線旋轉;藥液噴嘴27,其用以對被旋轉夾頭26所保持之基板W供給藥液;及沖洗液噴嘴28,其用以對被旋轉夾頭26所保持之基板W供給沖洗液。 The processing unit 2 further includes a rotating chuck 26 that holds a piece of substrate W in a horizontal posture in the processing chamber 7 and causes the substrate W to pass through the lead passing through the center of the substrate W The vertical rotation axis rotates; the chemical liquid nozzle 27, which supplies the chemical liquid to the substrate W held by the rotary chuck 26; and the rinse liquid nozzle 28, which supplies the substrate W held by the rotary chuck 26 Flushing fluid.
旋轉夾頭26包含有:圓板狀之旋轉基座29,其大致水平地保持基板W而可繞鉛垂軸線旋轉;及馬達等之旋轉驅動單元30,其使該旋轉基座29繞鉛垂軸線旋轉。藥液噴嘴27及沖洗液噴嘴28既可分別為基板W上之藥液及沖洗液之著液位置被固定之固定噴嘴,亦可為藥液及沖洗液之著液位置在基板W之旋轉中心至基板W之周緣之範圍內移動之掃描噴嘴。 The rotary chuck 26 includes: a disk-shaped rotating base 29 that holds the substrate W substantially horizontally and can rotate about a vertical axis; and a rotary drive unit 30 such as a motor that makes the rotating base 29 rotate vertically Axis rotation. The chemical liquid nozzle 27 and the rinsing liquid nozzle 28 may be fixed nozzles where the positions of the chemical liquid and the rinsing liquid on the substrate W are fixed, or may be the positions of the chemical liquid and the rinsing liquid on the rotation center of the substrate W The scanning nozzle moves within the range of the periphery of the substrate W.
藥液噴嘴27係連接於介設有藥液閥31之藥液配管32。藥液被供給至藥液噴嘴27。被供給至藥液噴嘴27之藥液,例如包含硫酸、醋酸、硝酸、鹽酸、氫氟酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH:四甲基氫氧化銨等)、及界面活化劑、防腐蝕劑中之至少一者之液體。 The chemical liquid nozzle 27 is connected to the chemical liquid pipe 32 in which the chemical liquid valve 31 is interposed. The chemical liquid is supplied to the chemical liquid nozzle 27. The chemical liquid supplied to the chemical liquid nozzle 27 includes, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), organic bases (such as TMAH: 4 Methyl ammonium hydroxide, etc.), and at least one of an interface activator and an anti-corrosion agent.
沖洗液噴嘴28係連接於介設有沖洗液閥33之沖洗液配管34。作為沖洗液之一例之純水(去離子水:Deionized Water)被供給至沖洗液噴嘴28。被供給至沖洗液噴嘴28之沖洗液並不限定於純水,亦可為碳酸水、電解離子水、氫水、臭氧水、及稀釋濃度(例如10~100ppm左右)之鹽酸水中之任一者。 The rinsing liquid nozzle 28 is connected to a rinsing liquid pipe 34 in which a rinsing liquid valve 33 is interposed. Pure water (deionized water) as an example of the rinse liquid is supplied to the rinse liquid nozzle 28. The rinsing liquid supplied to the rinsing liquid nozzle 28 is not limited to pure water, but may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10 to 100 ppm) .
第1控制裝置5例如使用電腦而構成。第1控制裝置5具有CPU等之運算單元、固定記憶體裝置、硬式磁碟機等之儲存單元、及輸出輸入單元。於儲存單元記憶有供運算單元執行之程式。第1控制裝置5係依據預先被設定於儲存單元之程式,而對旋轉驅動單元30等之動作進行控制。此外,第1控制裝置5對有機溶劑閥25、藥液閥 31、沖洗液閥33等之開閉動作等進行控制。又,第1控制裝置5(基板處理裝置4)係設置為可與第2控制裝置6(有機溶劑供給裝置3)相互地通信。 The first control device 5 is configured using a computer, for example. The first control device 5 includes an arithmetic unit such as a CPU, a storage unit such as a fixed memory device, a hard disk drive, and an input / output unit. The storage unit memorizes a program for the operation unit to execute. The first control device 5 controls the operation of the rotary drive unit 30 and the like according to a program previously set in the storage unit. In addition, the first control device 5 controls the organic solvent valve 25 and the chemical liquid valve. 31. The opening and closing operations of the flushing fluid valve 33, etc. are controlled. In addition, the first control device 5 (substrate processing device 4) is provided so as to be able to communicate with the second control device 6 (organic solvent supply device 3).
如圖1及圖2所示,於基板處理裝置4所包含之處理單元2之處理開始前,第1控制裝置5將供給要求信號傳送至有機溶劑供給裝置3。若有機溶劑供給裝置3收到供給要求信號,第2控制裝置6便打開與現在之有機溶劑槽9對應之個別開閉閥14,且打開共通開閉閥13,且打開與現在之有機溶劑槽9對應之加壓閥21。藉此,成為有機溶劑可自有機溶劑供給裝置3經由有機溶劑共通配管11而朝向處理單元2供給之狀態。在有機溶劑供給裝置3供給有機溶劑之狀態下,現在之有機溶劑槽9內部之壓力、及與該有機溶劑槽9對應之配管10、11內部之壓力,被保持為高壓(例如為2氣壓左右)。 As shown in FIGS. 1 and 2, before the processing of the processing unit 2 included in the substrate processing device 4 starts, the first control device 5 transmits a supply request signal to the organic solvent supply device 3. If the organic solvent supply device 3 receives the supply request signal, the second control device 6 opens the individual on-off valve 14 corresponding to the current organic solvent tank 9 and the common on-off valve 13 and opens the corresponding organic solvent tank 9之 Pressure valve 21. As a result, the organic solvent can be supplied from the organic solvent supply device 3 to the processing unit 2 through the organic solvent common piping 11. In a state where the organic solvent is supplied by the organic solvent supply device 3, the current pressure inside the organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the organic solvent tank 9 are maintained at a high pressure (for example, about 2 atmosphere ).
如圖2所示,於在處理單元2對基板W進行使用處理液(藥液、沖洗液及有機溶劑)之處理時,第1控制裝置5藉由旋轉夾頭26一邊水平地保持基板W,一邊使該基板W繞鉛垂之軸線旋轉。於該狀態下,第1控制裝置5打開藥液閥31,使藥液自藥液噴嘴27朝向基板W之上表面吐出。被供給至基板W之藥液,藉由因基板W之旋轉所產生之離心力而在基板W上向外擴散,並自基板W之上表面周緣部朝基板W之周圍被排出。第1控制裝置5於使來自藥液噴嘴27之藥液之吐出停止後,藉由打開沖洗液閥33,而使沖洗液自沖洗液噴嘴28朝向旋轉狀態之基板W之上表面吐出。藉此,使基板W上之藥液藉由沖洗液所沖洗掉。第1控制裝置5於使來自沖洗液噴嘴28之沖洗液之吐出停止後,藉由打開有機溶劑閥25,而使有機溶劑自有機溶劑噴嘴8朝向旋轉狀態之基板W之上表面吐出。藉此,使基板W上 之沖洗液被置換為有機溶劑。然後,第1控制裝置5藉由利用旋轉夾頭26使基板W高速旋轉,而使基板W乾燥。如此,進行對基板W之一連串之處理。 As shown in FIG. 2, when the processing unit 2 performs processing using the processing liquid (chemical liquid, rinse liquid, and organic solvent) on the substrate W, the first control device 5 horizontally holds the substrate W by rotating the chuck 26, While rotating the substrate W around the vertical axis. In this state, the first control device 5 opens the chemical liquid valve 31 and causes the chemical liquid to be discharged from the chemical liquid nozzle 27 toward the upper surface of the substrate W. The chemical liquid supplied to the substrate W diffuses outward on the substrate W by the centrifugal force generated by the rotation of the substrate W, and is discharged from the periphery of the upper surface of the substrate W toward the periphery of the substrate W. After stopping the discharge of the chemical solution from the chemical solution nozzle 27, the first control device 5 opens the rinse solution valve 33 to discharge the rinse solution from the rinse solution nozzle 28 toward the upper surface of the rotating substrate W. Thereby, the chemical liquid on the substrate W is washed away by the rinse liquid. After stopping the discharge of the rinse liquid from the rinse liquid nozzle 28, the first control device 5 opens the organic solvent valve 25 to discharge the organic solvent from the organic solvent nozzle 8 toward the upper surface of the rotating substrate W. By this, the substrate W The rinsing liquid is replaced with an organic solvent. Then, the first control device 5 rotates the substrate W at a high speed by using the rotary chuck 26 to dry the substrate W. In this way, a series of processing is performed on one of the substrates W.
圖3係顯示在基板處理裝置4所執行之吐出停止控制之流程圖。圖4係顯示在有機溶劑供給裝置3所執行之吐出停止控制之流程圖。圖5係顯示基板處理系統1中吐出停止控制之有機溶劑閥25、共通開閉閥13、個別開閉閥14及大氣開閉閥18之開閉狀態,暨壓力計16之測量值之時機圖。圖6係顯示自有機溶劑槽9之內部之大氣開放開始至大氣開放為止之減壓狀況之圖。 FIG. 3 is a flowchart showing the discharge stop control executed by the substrate processing apparatus 4. FIG. 4 is a flowchart showing the discharge stop control executed by the organic solvent supply device 3. FIG. 5 is a timing chart showing the opening and closing states of the organic solvent valve 25, the common opening and closing valve 13, the individual opening and closing valve 14, and the atmospheric opening and closing valve 18 in the substrate processing system 1, and the measured values of the pressure gauge 16. FIG. 6 is a diagram showing the decompression status from the opening of the atmosphere in the organic solvent tank 9 to the opening of the atmosphere.
在處理單元2中,若成為有機溶劑自有機溶劑噴嘴8之吐出時機,第1控制裝置5便打開有機溶劑閥25。藉此,使有機溶劑自有機溶劑噴嘴8被吐出。 In the processing unit 2, when it is time to discharge the organic solvent from the organic solvent nozzle 8, the first control device 5 opens the organic solvent valve 25. With this, the organic solvent is discharged from the organic solvent nozzle 8.
然後,若成為吐出停止時機(在圖3之步驟S1為是),第1控制裝置5便關閉有機溶劑閥25(圖3之步驟S2)。然後,於第1控制裝置5判斷基板處理裝置4為有機溶劑不需供給之狀態之情形時(在圖3之步驟S3為是),第1控制裝置5便對有機溶劑供給裝置3傳送不需供給信號(圖3之步驟S4)。又,於並非吐出停止時機之情形(在圖3之步驟S1為否)、判斷為並非有機溶劑不需供給之狀態之情形(在圖3之步驟S3為否)、及傳送不需供給信號後,圖3所示之處理便返回。 Then, when it is time to stop the discharge (YES in step S1 in FIG. 3), the first control device 5 closes the organic solvent valve 25 (step S2 in FIG. 3). Then, when the first control device 5 determines that the substrate processing device 4 is in a state in which the organic solvent does not need to be supplied (YES in step S3 of FIG. 3), the first control device 5 transmits the organic solvent supply device 3 without The signal is supplied (step S4 in FIG. 3). In addition, when it is not the case where the stop timing is not ejected (No in step S1 of FIG. 3), when it is judged that it is not in a state in which the organic solvent does not need to be supplied (in step S3 of FIG. 3), and after the supply unnecessary signal is transmitted , The process shown in Figure 3 returns.
所謂有機溶劑不需供給之狀態,係指基板處理裝置4已不需供給更多有機溶劑之狀態。作為有機溶劑不需供給之狀態的一例,可列舉在一處理單元2之有機溶劑之吐出的結束時間點,另一處理單元2之有機溶劑之吐出已結束之狀態。又,除了另一處理單元2 之有機溶劑之吐出結束以外,亦可將在其後短暫之期間,基板處理裝置4所包含之處理單元2並無有機溶劑之吐出預定的情形,增加至有機溶劑不需供給之狀態的成立條件中。 The so-called state where no organic solvent needs to be supplied refers to a state where the substrate processing apparatus 4 no longer needs to supply more organic solvent. As an example of the state in which the organic solvent does not need to be supplied, the state where the discharge of the organic solvent in one processing unit 2 ends and the discharge of the organic solvent in the other processing unit 2 has been completed. Also, in addition to another processing unit 2 In addition to the end of the discharge of the organic solvent, the processing unit 2 included in the substrate processing apparatus 4 may not be scheduled to discharge the organic solvent for a short period of time thereafter, and the conditions for the establishment of the state where the organic solvent does not need to be supplied may be increased in.
若收到來自基板處理裝置4之不需供給信號(在圖4之步驟T1為是)、第2控制裝置6便打開與現在之有機溶劑槽9對應之大氣開閉閥18(圖4之步驟T2)。 When receiving the no-supply signal from the substrate processing apparatus 4 (YES in step T1 of FIG. 4), the second control device 6 opens the atmospheric on-off valve 18 corresponding to the current organic solvent tank 9 (step T2 of FIG. 4) ).
藉由打開大氣開閉閥18,使有機溶劑槽9之內部被減壓。然而,由於固定孔口19係設置於大氣連通配管17,因此氣體難以通過大氣連通配管17之內部。因此,即便打開大氣連通配管17,有機溶劑槽9之內部也不會一口氣被減壓,該內部之壓力會花費某程度之時間逐漸地降低。亦即,自有機溶劑槽9內部之大氣開放開始至該內部壓力下降到大氣壓為止,將花費某程度之時間。藉由將大氣開閉閥18與固定孔口19加以組合,可實現能使處於加壓狀態之有機溶劑槽9之內部逐漸地大氣開放之構成。 By opening the atmospheric opening and closing valve 18, the inside of the organic solvent tank 9 is depressurized. However, since the fixed orifice 19 is provided in the atmospheric communication pipe 17, it is difficult for gas to pass through the interior of the atmospheric communication pipe 17. Therefore, even if the atmosphere communication pipe 17 is opened, the inside of the organic solvent tank 9 will not be decompressed at once, and the pressure inside will gradually decrease to some extent. That is, it takes some time from the opening of the atmosphere inside the organic solvent tank 9 until the internal pressure drops to atmospheric pressure. By combining the atmospheric opening / closing valve 18 and the fixed orifice 19, it is possible to realize a structure capable of gradually opening the inside of the organic solvent tank 9 in a pressurized state to the atmosphere.
再者,如圖5所示,於有機溶劑閥25之關閉與大氣開閉閥18之開放之間,存在有既定之延遲D。 Furthermore, as shown in FIG. 5, there is a predetermined delay D between the closing of the organic solvent valve 25 and the opening of the atmospheric on-off valve 18.
接著,第2控制裝置6參照與現在之有機溶劑槽9對應之壓力計16之檢測輸出,來調查現在之有機溶劑槽9之內部是否被減壓至大氣壓(圖4之步驟T3)。然後,若現在之有機溶劑槽9內部之壓力下降至大氣壓(在圖4之步驟T3為是),第2控制裝置6便關閉共通開閉閥13及個別開閉閥14(圖4之步驟T4)。因此,閥13、14之關閉以後,有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部,便被維持為大氣壓。由於氣體對液體之溶解度與其壓力成比例,因此大氣壓之液體並不會有較大量之氣體溶入。因此, 可減低溶入有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部之有機溶劑的溶存氣體量。 Next, the second control device 6 refers to the detection output of the pressure gauge 16 corresponding to the current organic solvent tank 9 to investigate whether the inside of the current organic solvent tank 9 is depressurized to atmospheric pressure (step T3 in FIG. 4). Then, if the pressure inside the current organic solvent tank 9 drops to atmospheric pressure (YES at step T3 in FIG. 4), the second control device 6 closes the common on-off valve 13 and the individual on-off valve 14 (step T4 in FIG. 4). Therefore, after the valves 13 and 14 are closed, the inside of the organic solvent tank 9, the inside of the organic solvent individual piping 10, and the inside of the organic solvent common piping 11 are maintained at atmospheric pressure. Because the solubility of gas to liquid is proportional to its pressure, the liquid at atmospheric pressure will not dissolve a large amount of gas. therefore, The dissolved gas amount of the organic solvent dissolved in the inside of the organic solvent tank 9, the inside of the organic solvent individual piping 10, and the inside of the organic solvent common piping 11 can be reduced.
於現在之有機溶劑槽9內部之壓力高於大氣壓之情形時(在圖4之步驟T3為否),接著,第2控制裝置6對自大氣開閉閥18之開啟(亦即,大氣開放)起是否已經過既定時間(X秒(例如5秒左右))進行調查(圖4之步驟T5)。然後,若自大氣開閉閥18之開啟起經過X秒(在圖4之步驟T5為是),第2控制裝置6便參照與現在之有機溶劑槽9對應之壓力計16之檢測輸出(圖4之步驟T6)。此時,為自大氣開放起經過X秒後之測量值(測量壓力)未達臨限值(設定為較大氣壓略為高壓之既定的臨限值)之情形時,第2控制裝置6便判斷為錯誤狀態。 When the pressure inside the organic solvent tank 9 is higher than atmospheric pressure (No in step T3 in FIG. 4), then, the second control device 6 starts from the opening of the atmospheric opening and closing valve 18 (that is, the atmospheric opening) Whether a predetermined time (X seconds (for example, about 5 seconds)) has passed (step T5 in FIG. 4). Then, if X seconds have elapsed since the opening of the atmospheric on-off valve 18 (YES at step T5 in FIG. 4), the second control device 6 refers to the detection output of the pressure gauge 16 corresponding to the current organic solvent tank 9 (FIG. 4 Step T6). At this time, when the measured value (measured pressure) after X seconds has elapsed since the opening of the atmosphere does not reach the threshold (set to a predetermined threshold at a higher atmospheric pressure and a higher pressure), the second control device 6 determines that Error status.
第2控制裝置6具備記憶體(未圖示)。於該記憶體係儲存有壓力值之臨限值。如圖6所示,臨限值係自大氣開放開始X秒後之下限壓力值,於測量值未達該臨限值之情形時,若有機溶劑槽9內部之減壓速度過快,被作為急速減壓而判斷為錯誤狀態。圖6所示之虛線係錯誤狀態。圖6所示之兩點鏈線為並非錯誤之狀態(OK之狀態)。若有機溶劑槽9內部之減壓速度過快,便會有溶存於有機溶劑之氣體在該減壓過程中作為氣泡(微氣泡)而出現之可能性。因此,第2控制裝置6便將有機溶劑槽9內部之減壓速度較既定速度快之情形作為錯誤狀態而檢出。 The second control device 6 includes a memory (not shown). The threshold value of the pressure value is stored in the memory system. As shown in Fig. 6, the threshold value is the lower limit pressure value X seconds after the opening of the atmosphere. When the measured value does not reach the threshold value, if the decompression speed inside the organic solvent tank 9 is too fast, it is taken as Rapid decompression to determine an error state. The dotted line shown in Figure 6 is an error state. The two-dot chain line shown in Fig. 6 is not in an error state (OK state). If the decompression speed inside the organic solvent tank 9 is too fast, the gas dissolved in the organic solvent may appear as bubbles (microbubbles) during the decompression process. Therefore, the second control device 6 detects that the decompression speed inside the organic solvent tank 9 is faster than the predetermined speed as an error state.
若第2控制裝置6判斷為錯誤狀態,便進行既定之錯誤處理(圖4之步驟T7)。作為錯誤處理,可列舉將錯誤狀態之發生儲存於記錄檔,或者自基板處理裝置4或有機溶劑供給裝置3發出警報之情形等。 If the second control device 6 determines that it is in an error state, it performs a predetermined error process (step T7 in FIG. 4). Examples of error processing include a case where the occurrence of an error state is stored in a log file, or an alarm is issued from the substrate processing apparatus 4 or the organic solvent supply apparatus 3.
又,於未收到不需供給信號之情形(圖4之步驟T1為 否)、自大氣開閉閥18之開啟起未經過X秒之情形(圖4之步驟T5為否)、測量值為臨限值以上之情形(圖4之步驟T5為是)、閥13、14之關閉後及錯誤處理之結束後,圖4所示之處理便返回。 In addition, in the case where no supply signal is not received (step T1 in FIG. 4 is No), when X seconds have not passed since the opening of the atmospheric on-off valve 18 (No in step T5 of FIG. 4), when the measured value is above the threshold (Yes in step T5 of FIG. 4), valves 13, 14 After the closing and the end of the error processing, the processing shown in FIG. 4 returns.
圖7係顯示有機溶劑之液膜41所包含微小的異物42在基板W表面上之狀態之圖。藉由將有機溶劑供給至基板W之表面,而於基板W之表面形成有機溶劑之液膜41。 FIG. 7 is a diagram showing a state where minute foreign substances 42 contained in the liquid film 41 of the organic solvent are on the surface of the substrate W. FIG. By supplying the organic solvent to the surface of the substrate W, a liquid film 41 of the organic solvent is formed on the surface of the substrate W.
存在有自有機溶劑噴嘴8所吐出之有機溶劑含有氣泡43之情形。若有機溶劑之液膜41中含有氣泡43,便藉由有機溶劑之液體與氣泡43而形成氣液界面。有機溶劑所包含微小的異物42會被吸引而聚集至該氣液界面,而成長為既定大小之微小微粒。其結果,存在有乾燥後之基板W表面會產生微小微粒之可能性。而且,若有機溶劑之液膜41中所包含之氣泡量較多,便存在有氣液界面大面積化而使微小微粒產生之問題顯著化之可能性。 The organic solvent discharged from the organic solvent nozzle 8 may contain bubbles 43. If the liquid film 41 of the organic solvent contains bubbles 43, a gas-liquid interface is formed by the liquid of the organic solvent and the bubbles 43. The tiny foreign substances 42 contained in the organic solvent are attracted and gathered to the gas-liquid interface, and grow into tiny particles of a predetermined size. As a result, there is a possibility that fine particles may be generated on the surface of the substrate W after drying. In addition, if the amount of bubbles contained in the liquid film 41 of the organic solvent is large, there is a possibility that the gas-liquid interface becomes larger in size and the problem of the generation of fine particles becomes significant.
又,參照圖1而如前所述,有機溶劑供給裝置3之設置場所為基板處理裝置4之下層(下層設置)。換言之,閥13、14係配置於較有機溶劑閥25更下方。於該情形時,為了使被貯存於有機溶劑槽9之有機溶劑抵達處理單元2,需要以更高壓來壓送有機溶劑槽9內之有機溶劑。於該情形時,槽等9、10、11內部之壓力變得更高,其結果,存在有使氣泡產生之問題更進一步顯著化之可能性。 As described above with reference to FIG. 1, the installation location of the organic solvent supply device 3 is the lower layer (lower layer installation) of the substrate processing device 4. In other words, the valves 13 and 14 are arranged below the organic solvent valve 25. In this case, in order for the organic solvent stored in the organic solvent tank 9 to reach the processing unit 2, the organic solvent in the organic solvent tank 9 needs to be pumped at a higher pressure. In this case, the pressure inside the tanks 9, 10, and 11 becomes higher, and as a result, there is a possibility that the problem of the generation of air bubbles becomes more significant.
又,由於將有機溶劑供給裝置3設置於下層,因此有機溶劑共通配管11之配管長度較長(例如為5~10m)。因此,於有機溶劑共通配管11之內部局部地存在有高壓之部分,藉此,亦存在使前述之氣泡產生之問題進一步顯著化之可能性。 In addition, since the organic solvent supply device 3 is provided in the lower layer, the piping length of the organic solvent common piping 11 is long (for example, 5 to 10 m). Therefore, there is a high-pressure part locally inside the organic solvent common piping 11, and by this, there is a possibility that the aforementioned problem of the generation of bubbles may be further conspicuous.
此處,為了有助於本實施形態之特徵及功效的理解,作 為參考例而對其他形態之基板處理系統進行討論。 Here, in order to facilitate the understanding of the features and functions of this embodiment, For reference examples, other forms of substrate processing systems are discussed.
圖8係顯示其他形態之基板處理系統之構成之示意圖。 FIG. 8 is a schematic diagram showing the structure of a substrate processing system of another form.
於其他形態中,對與本發明一實施形態所示之各部分對應之部分,賦予與圖1~圖6之情形相同之參照符號而加以顯示,並省略其說明。 In other forms, the parts corresponding to the parts shown in one embodiment of the present invention are shown with the same reference signs as in the case of FIGS. 1 to 6 and their description is omitted.
其他形態之基板處理系統,具備有:有機溶劑供給裝置103;及第3控制裝置106,其對有機溶劑供給裝置103進行控制。第3控制裝置106係藉由電腦所構成。有機溶劑供給裝置103與前述之有機溶劑供給裝置3相異之點,在於廢除大氣連通配管17(參照圖1)、大氣開閉閥18(參照圖1)及壓力計16(參照圖1)的部分。其他構成則與前述之有機溶劑供給裝置3相同。 A substrate processing system of another form includes: an organic solvent supply device 103; and a third control device 106, which controls the organic solvent supply device 103. The third control device 106 is constituted by a computer. The difference between the organic solvent supply device 103 and the aforementioned organic solvent supply device 3 is that the atmospheric communication piping 17 (see FIG. 1), the atmospheric on-off valve 18 (see FIG. 1) and the pressure gauge 16 (see FIG. 1) are abolished . The other configuration is the same as the aforementioned organic solvent supply device 3.
在此種有機溶劑供給裝置103中,若收到來自基板處理裝置4之不需供給信號(若有機溶劑閥25被關閉),第3控制裝置106便接著關閉共通開閉閥13及個別開閉閥14。在如前述般供給有機溶劑之狀態之有機溶劑供給裝置3中,現在之有機溶劑槽9及與該有機溶劑槽9對應之配管10、11(以下,有時會稱為「槽等9、10、11」)內部之壓力被保持為高壓(例如為2氣壓左右)。由於不釋放槽等9、10、11內部之壓力,而關閉共通開閉閥13及個別開閉閥14,因此於閥13、14之關閉以後,槽等9、10、11內部之壓力仍會被保持為高壓之狀態。 In such an organic solvent supply device 103, if a signal of unnecessary supply from the substrate processing device 4 is received (if the organic solvent valve 25 is closed), the third control device 106 then closes the common on-off valve 13 and the individual on-off valve 14 . In the organic solvent supply device 3 in the state where the organic solvent is supplied as described above, the current organic solvent tank 9 and the pipes 10 and 11 corresponding to the organic solvent tank 9 (hereinafter, sometimes referred to as "tank etc. 9, 10 , 11 ") The internal pressure is maintained at high pressure (for example, about 2 atmospheres). Since the pressure inside the tanks 9, 10, and 11 is not released, the common on-off valve 13 and the individual on-off valves 14 are closed. Therefore, after the valves 13 and 14 are closed, the pressure inside the tanks 9, 10, and 11 will be maintained The state of high pressure.
由於持續利用高壓之加壓氣體進行壓送,因此大量的氣體(氮氣等之惰性氣體)便會溶入槽等9、10、11內部之有機溶劑中。除此之外,亦存在配管10、11外之環境氣體(例如氧)會穿透由PFA所構成之配管10、11之管壁,而溶入以液密狀態存在於配管10、11內部之有機溶劑中之可能性。藉由「氣體對液體之溶解度與其壓力成比例」 之亨利定律(Henry's law),處於高壓狀態之配管10、11之內部,亦存在環境氣體(例如氧)大量地溶入有機溶劑之可能性。其結果,存在有被吐出至基板W之有機溶劑所包含之氣泡量增多之可能性。 Since the high-pressure pressurized gas is continuously used for pressure delivery, a large amount of gas (inert gas such as nitrogen) will be dissolved into the organic solvent inside 9, 10, and 11 of the tank. In addition, there are also ambient gases (such as oxygen) outside the pipes 10 and 11 that can penetrate the walls of the pipes 10 and 11 made of PFA and dissolve into the pipes 10 and 11 in a liquid-tight state. Possibility in organic solvents. By "the solubility of gas in liquid is proportional to its pressure" Henry's law (Henry's law), inside the pipes 10 and 11 in a high-pressure state, there is also a possibility that a large amount of ambient gas (such as oxygen) dissolves into the organic solvent. As a result, there is a possibility that the amount of bubbles included in the organic solvent discharged to the substrate W increases.
又,因為於閥13、14之關閉以後,槽等9、10、11內部之壓力仍被保持為高壓之狀態,因此在處理單元2中進行有機溶劑之再吐出時,若有機溶劑閥25為了自有機溶劑噴嘴8吐出有機溶劑而被打開,則一直被保持為高壓之有機溶劑(尤其有機溶劑共通配管11內部之有機溶劑)便會急速減壓,而存在溶存於其內部之氣體成為氣泡,而導致大量發泡之可能性。 Also, after the valves 13 and 14 are closed, the pressure inside the tanks 9, 10, and 11 is still maintained at a high pressure. Therefore, when the organic solvent is discharged again in the processing unit 2, if the organic solvent valve 25 is When the organic solvent is discharged from the organic solvent nozzle 8 and opened, the organic solvent that has been maintained at a high pressure (especially the organic solvent in the organic solvent common piping 11) will be rapidly depressurized, and the gas dissolved in it becomes bubbles, And lead to the possibility of a lot of foaming.
相對於此,根據該實施形態,於處理液自有機溶劑供給裝置3朝向處理單元2之供給停止時,第3控制裝置106便於共通開閉閥13及個別開閉閥14之關閉之前,打開大氣連通配管17,使處於加壓狀態之有機溶劑槽9之內部逐漸地大氣開放,並於有機溶劑槽9內部之壓力下降至大氣壓之後,關閉共通開閉閥13及個別開閉閥14。因此,於閥13、14之關閉以後,有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部,便被維持為大氣壓。 In contrast, according to this embodiment, when the supply of the processing liquid from the organic solvent supply device 3 to the processing unit 2 is stopped, the third control device 106 facilitates the opening of the atmosphere communication piping before the common on-off valve 13 and the individual on-off valve 14 are closed. 17. The inside of the organic solvent tank 9 in a pressurized state is gradually opened to the atmosphere, and after the pressure inside the organic solvent tank 9 drops to atmospheric pressure, the common on-off valve 13 and the individual on-off valve 14 are closed. Therefore, after the valves 13 and 14 are closed, the inside of the organic solvent tank 9, the inside of the organic solvent individual piping 10, and the inside of the organic solvent common piping 11 are maintained at atmospheric pressure.
溶入大氣壓之液體的氣體量較少。因此,可減低溶入有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部的有機溶劑之溶存氣體量。因為溶入有機溶劑之溶存氣體量較少,所以可減低有機溶劑中所產生之氣泡量。 The amount of gas dissolved in the liquid at atmospheric pressure is small. Therefore, it is possible to reduce the dissolved gas amount of the organic solvent dissolved in the inside of the organic solvent tank 9, the inside of the organic solvent individual piping 10, and the inside of the organic solvent common piping 11. Because the amount of dissolved gas dissolved in the organic solvent is small, the amount of bubbles generated in the organic solvent can be reduced.
又,在處理單元2進行有機溶劑之再吐出時,有機溶劑個別配管10之內部及有機溶劑共通配管11之內部被保持為加壓狀態,有機溶劑閥25在該狀態下被打開。於該再吐出時,伴隨著有機溶劑閥25之開啟,在配管10、11內部雖會發生減壓,但由於溶入配管 10、11內部之有機溶劑之溶存氣體量較少,因此可減低伴隨著減壓而於有機溶劑中產生之氣泡量。 In addition, when the processing unit 2 re-discharges the organic solvent, the inside of the organic solvent individual piping 10 and the inside of the organic solvent common piping 11 are maintained in a pressurized state, and the organic solvent valve 25 is opened in this state. At the time of this re-ejection, with the opening of the organic solvent valve 25, although pressure reduction occurs inside the pipes 10 and 11, the dissolution into the pipe 10. The amount of dissolved gas in the organic solvent inside 10 and 11 is small, so the amount of bubbles generated in the organic solvent accompanying decompression can be reduced.
又,由於逐漸地進行有機溶劑槽9內部之大氣開放,因此亦可抑制或防止溶入有機溶劑之氣體,在該減壓過程中成為氣泡而出現之情形。 In addition, since the atmosphere inside the organic solvent tank 9 is gradually opened, it is possible to suppress or prevent the gas dissolved in the organic solvent from becoming bubbles during the decompression process.
藉此,可減低自有機溶劑供給裝置3供給至處理單元2之有機溶劑所包含之氣泡量。 With this, the amount of bubbles contained in the organic solvent supplied from the organic solvent supply device 3 to the processing unit 2 can be reduced.
以上,雖已對本發明一實施形態進行說明,但本發明亦可以其他形態實施。 Although one embodiment of the present invention has been described above, the present invention can be implemented in other forms.
例如,在前述之實施形態中,雖根據壓力計16之測量值來判斷有機溶劑槽9內部之壓力下降至大氣壓,但亦可藉由壓力計16之測量值檢測有機溶劑槽9內部之壓力下降至既定壓力,且藉由自該檢測後經過既定時間,來判斷有機溶劑槽9內部之壓力下降至大氣壓。 For example, in the aforementioned embodiment, although the pressure inside the organic solvent tank 9 is judged to fall to atmospheric pressure based on the measured value of the pressure gauge 16, the pressure drop inside the organic solvent tank 9 can also be detected by the measured value of the pressure gauge 16 To a predetermined pressure, and it is determined that the pressure inside the organic solvent tank 9 has fallen to atmospheric pressure by a predetermined time after the detection.
又,雖已說明設為在有機溶劑槽9內部之壓力下降至大氣壓後關閉共通開閉閥13及個別開閉閥14,但只要在大氣開放開始後,亦可設為在下降至大氣壓前的時間點關閉共通開閉閥13及個別開閉閥14。 In addition, although it has been described that the pressure inside the organic solvent tank 9 is reduced to atmospheric pressure, the common on-off valve 13 and the individual on-off valve 14 are closed, but as long as the atmospheric opening is started, it may be set to a time before falling to atmospheric pressure. The common on-off valve 13 and the individual on-off valve 14 are closed.
又,雖已說明設為固定孔口19與大氣開閉閥18分別地被介設於大氣連通配管17,但孔口亦可被設置於大氣開閉閥18本身。亦即,亦可設置附有孔口之閥來作為大氣開閉閥18。 In addition, although it has been described that the fixed orifice 19 and the atmospheric opening and closing valve 18 are respectively interposed in the atmospheric communication pipe 17, the orifice may be provided in the atmospheric opening and closing valve 18 itself. That is, a valve with an orifice may be provided as the atmospheric on-off valve 18.
又,亦可如圖9所示,取代固定孔口19而設置用以調整大氣連通配管17之開度之開度調整單元218。開度調整單元218既可為如圖9所示之流量調整閥,亦可為可變孔口(流量調整孔口)。 In addition, as shown in FIG. 9, instead of the fixed orifice 19, an opening adjustment unit 218 for adjusting the opening of the atmospheric communication piping 17 may be provided. The opening adjustment unit 218 may be either a flow adjustment valve as shown in FIG. 9 or a variable orifice (flow adjustment orifice).
雖未圖示,但流量調整閥包含有:閥身,於其內部設置有閥座;閥體,其對閥座進行開閉;及致動器,其使閥體在開位置與閉位置之間移動。作為致動器,可採用電動馬達或汽缸等。又,作為流量調整閥,可採用針閥(needle valve)、膜片閥(diaphragm valve)、蝶形閥(butterfly valve)等各種形式。 Although not shown, the flow regulating valve includes: a valve body with a valve seat inside; a valve body that opens and closes the valve seat; and an actuator that places the valve body between an open position and a closed position mobile. As the actuator, an electric motor, a cylinder, or the like can be used. In addition, as the flow rate adjustment valve, various forms such as a needle valve, a diaphragm valve, and a butterfly valve can be used.
又,該開度調整單元218亦可與大氣開閉閥18合併使用,於該開度調整單元218具有開閉功能之情形時,亦可廢除大氣開閉閥18。 In addition, the opening degree adjustment unit 218 can also be used in combination with the atmospheric opening and closing valve 18. When the opening degree adjustment unit 218 has an opening and closing function, the atmospheric opening and closing valve 18 can also be eliminated.
又,亦可不設置固定孔口19或開度調整單元218。於該情形時,第2控制裝置6亦可藉由將大氣開閉閥18之開放速度設為低速,而實現使有機溶劑槽9之內部逐漸地大氣開放。 Furthermore, the fixed orifice 19 or the opening adjustment unit 218 may not be provided. In this case, the second control device 6 may also gradually open the inside of the organic solvent tank 9 by setting the opening speed of the atmospheric opening and closing valve 18 to a low speed.
又,用以調整有機溶劑槽9內部之壓力之壓力調整單元,不需設置於大氣連通配管17。壓力調整單元例如亦可直接設置於有機溶劑槽9。 In addition, the pressure adjustment unit for adjusting the pressure inside the organic solvent tank 9 does not need to be provided in the atmospheric communication pipe 17. For example, the pressure adjustment unit may be directly provided in the organic solvent tank 9.
又,在前述之實施形態中,雖已列舉有機溶劑供給裝置3具備有複數個有機溶劑槽9之情形為例而進行說明,但有機溶劑供給裝置3亦可僅具備1個有機溶劑槽9。於該情形時,由於不需切換供給來源之有機溶劑槽,因此可廢除有機溶劑個別配管10及個別開閉閥14。 In the foregoing embodiment, the organic solvent supply device 3 includes a plurality of organic solvent tanks 9 as an example. However, the organic solvent supply device 3 may include only one organic solvent tank 9. In this case, since there is no need to switch the organic solvent tank of the supply source, the individual piping 10 of the organic solvent and the individual on-off valve 14 can be eliminated.
又,亦可為有機溶劑供給裝置3不僅包含用以供給有機溶劑之機構,還包含用以供給其他藥液之機構的構成。亦即,亦可為與其他藥液供給裝置共通化之構成。 In addition, the organic solvent supply device 3 may include not only a mechanism for supplying an organic solvent, but also a mechanism for supplying other chemical solutions. That is, it may be configured to be common to other chemical liquid supply devices.
又,在前述之實施形態中,雖已列舉IPA作為自有機溶劑供給裝置3所供給之有機溶劑為例進行說明,但除了IPA以外,還 可採用甲醇、乙醇、丙酮、氫氟醚(HEF,Hydro Fluoro Ether)及乙二醇(EG,Ethylene Glycol)等之有機溶劑。 Furthermore, in the foregoing embodiment, IPA has been described as an example of the organic solvent supplied from the organic solvent supply device 3, but in addition to IPA, Organic solvents such as methanol, ethanol, acetone, hydrofluoroether (HEF, Hydro Fluoro Ether) and ethylene glycol (EG, Ethylene Glycol) can be used.
又,在前述之說明中,雖已說明設為處理單元2及有機溶劑供給裝置3相互獨立之單元,但處理單元2及有機溶劑供給裝置3亦可為共通之裝置的一部分。亦即,基板處理系統亦可具備包含處理單元2及有機溶劑供給裝置3之基板處理裝置。於該情形時,亦可使用將第1及第2控制裝置5、6整合後之控制裝置。 In the foregoing description, although the processing unit 2 and the organic solvent supply device 3 have been described as separate units, the processing unit 2 and the organic solvent supply device 3 may be part of a common device. That is, the substrate processing system may also include a substrate processing device including the processing unit 2 and the organic solvent supply device 3. In this case, a control device in which the first and second control devices 5 and 6 are integrated may also be used.
又,雖已列舉供給有機溶劑之有機溶劑供給裝置3為例來說明處理液供給裝置,但處理液供給裝置並不限定於供給有機溶劑者,亦可為供給藥液或沖洗液等者。 In addition, although the organic solvent supply device 3 for supplying an organic solvent has been taken as an example to describe the processing liquid supply device, the processing liquid supply device is not limited to a person supplying an organic solvent, and may also be a person supplying a chemical solution, a rinse solution, or the like.
又,在前述之實施形態中,雖已提出半導體晶圓來作為處理對象之基板W,但並不限定於半導體晶圓,亦可將例如液晶顯示裝置用玻璃基板、電漿顯示器用基板、FED用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板等其他種類之基板作為處理對象。 Furthermore, in the foregoing embodiment, although a semiconductor wafer has been proposed as the substrate W to be processed, it is not limited to the semiconductor wafer, and for example, a glass substrate for a liquid crystal display device, a substrate for a plasma display, and a FED may be used. Other types of substrates, such as substrates, optical disc substrates, magnetic disc substrates, optomagnetic disc substrates, photomask substrates, ceramic substrates, solar cell substrates, and other types of substrates are processed.
雖已對本發明之實施形態詳細地進行說明,但該等僅為用於使本發明之技術性內容明確化之具體例,本發明不應限定於該等具體例而進行解釋,本發明之範圍僅由隨附之申請專利範圍所限定。 Although the embodiments of the present invention have been described in detail, these are only specific examples for clarifying the technical content of the present invention, and the present invention should not be limited to these specific examples for interpretation, and the scope of the present invention Only limited by the scope of the attached patent application.
本申請案係對應於2015年9月28日對日本專利廳所提出之日本專利特願2015-189918號,該申請案之全部揭示係藉由引用而併入至本文中。 This application corresponds to Japanese Patent Application No. 2015-189918 filed with the Japan Patent Office on September 28, 2015, and the entire disclosure of this application is incorporated herein by reference.
Claims (13)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015189918A JP6667241B2 (en) | 2015-09-28 | 2015-09-28 | Processing liquid supply device, substrate processing system and processing liquid supply method |
| JP2015-189918 | 2015-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201714204A TW201714204A (en) | 2017-04-16 |
| TWI644344B true TWI644344B (en) | 2018-12-11 |
Family
ID=58423303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105126375A TWI644344B (en) | 2015-09-28 | 2016-08-18 | Processing liquid supply device, substrate processing system, and processing liquid supply method |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6667241B2 (en) |
| KR (1) | KR102184477B1 (en) |
| CN (1) | CN108025335B (en) |
| TW (1) | TWI644344B (en) |
| WO (1) | WO2017056617A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11077461B2 (en) | 2017-06-15 | 2021-08-03 | The Boeing Company | Apparatus and methods for use in applying a fluid to a surface |
| JP7267088B2 (en) * | 2019-05-10 | 2023-05-01 | 東京エレクトロン株式会社 | Tanks, substrate processing equipment, and methods of using tanks |
| CN110197801A (en) * | 2019-05-14 | 2019-09-03 | 清华大学 | A kind of storage device and substrate equipment for after-treatment of processing substrate liquid |
| CN110429046B (en) * | 2019-06-19 | 2024-12-27 | 清华大学 | Fluid supply device for substrate drying and substrate drying equipment |
| CN110531794A (en) * | 2019-08-30 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Fluid pressure control device and method, cleaning solution supplying mechanism |
| KR102548294B1 (en) * | 2020-04-24 | 2023-06-28 | 세메스 주식회사 | Unit for supplying liquid, apparatus for treating substrate and method for treating substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005040670A (en) * | 2003-07-24 | 2005-02-17 | Shibaura Mechatronics Corp | Coating device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000021703A (en) * | 1998-07-02 | 2000-01-21 | Dainippon Screen Mfg Co Ltd | Processing solution delivery method and apparatus |
| JP3764280B2 (en) * | 1998-09-22 | 2006-04-05 | シーケーディ株式会社 | Chemical supply system |
| JP2000173902A (en) * | 1998-12-08 | 2000-06-23 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| JP2004273984A (en) * | 2003-03-12 | 2004-09-30 | Dainippon Screen Mfg Co Ltd | Method and device for substrate processing |
| JP4421956B2 (en) * | 2003-07-18 | 2010-02-24 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and processing method |
| JP4553256B2 (en) * | 2005-06-24 | 2010-09-29 | 東京エレクトロン株式会社 | Substrate processing system and control method thereof |
| JP5854668B2 (en) * | 2011-07-07 | 2016-02-09 | 芝浦メカトロニクス株式会社 | Gas-liquid mixed fluid generating apparatus, gas-liquid mixed fluid generating method, processing apparatus, and processing method |
-
2015
- 2015-09-28 JP JP2015189918A patent/JP6667241B2/en active Active
-
2016
- 2016-07-05 WO PCT/JP2016/069933 patent/WO2017056617A1/en not_active Ceased
- 2016-07-05 CN CN201680052890.8A patent/CN108025335B/en active Active
- 2016-07-05 KR KR1020187006641A patent/KR102184477B1/en active Active
- 2016-08-18 TW TW105126375A patent/TWI644344B/en active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005040670A (en) * | 2003-07-24 | 2005-02-17 | Shibaura Mechatronics Corp | Coating device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180031781A (en) | 2018-03-28 |
| WO2017056617A1 (en) | 2017-04-06 |
| TW201714204A (en) | 2017-04-16 |
| JP2017064582A (en) | 2017-04-06 |
| CN108025335A (en) | 2018-05-11 |
| JP6667241B2 (en) | 2020-03-18 |
| KR102184477B1 (en) | 2020-11-30 |
| CN108025335B (en) | 2021-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI644344B (en) | Processing liquid supply device, substrate processing system, and processing liquid supply method | |
| CN103426795B (en) | The medicinal liquid of processing substrate generates method, generates unit and base plate processing system | |
| CN108022861B (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| KR102141333B1 (en) | Substrate processing apparatus | |
| TWI761389B (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| TWI491441B (en) | Gas-liquid mixed fluid generating device, gas-liquid mixed fluid generating method, processing device, and processing method | |
| JP4869957B2 (en) | Substrate processing equipment | |
| CN106663622B (en) | cleaning device | |
| CN110120359B (en) | Substrate processing method and substrate processing apparatus | |
| US20180096863A1 (en) | Substrate processing method, substrate processing apparatus, and storage medium | |
| JP2018081966A (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| TW202220746A (en) | Gas dissolved liquid supplying device | |
| JP2020170873A (en) | Substrate processing device, substrate processing method and recording medium | |
| KR20190086348A (en) | Treatment liquid supply device and deairing method thereof | |
| JP6435385B2 (en) | Substrate processing chemical generation method, substrate processing chemical generation unit, substrate processing method, and substrate processing system | |
| JP6290016B2 (en) | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium | |
| JP6571942B2 (en) | Substrate processing equipment | |
| CN114365269B (en) | Thin chemical liquid supply device | |
| JP3259160B2 (en) | Treatment liquid supply method and treatment liquid supply device | |
| TW202431482A (en) | Substrate processing device and substrate processing method | |
| TW202106365A (en) | Systems and methods for generating a dissolved ammonia solution with reduced dissolved carrier gas and oxygen content | |
| JP2000000579A (en) | Ozone water making apparatus | |
| JP2001358113A (en) | Substrate-processing apparatus |