TWI528566B - Method and structure of monolithically integrated absolute pressure sensor - Google Patents

Description

Structure and method of single crystal integrated absolute pressure sensor Cross-reference to related applications

The present application claims the priority of the applications in the following applications for all purposes and incorporates the same by reference: U.S. Provisional Application No. 61/838,833, filed on Jun. 24, 2013, and U.S. Patent Application Serial No. 14/311,034, filed on Jan. 20. The present application is also hereby incorporated by reference in its entirety for all its purposes in the entire application application in the the the the the the the the the the the U.S. Patent Application Serial No. 13/494,986, filed on Jul. 7, 2009.

The research and development of integrated microelectronics has continued to produce surprising advances in CMOS and MEMS. CMOS technology has become the main manufacturing technology of integrated circuits (ICs). Microelectromechanical systems (MEMS) based sensors can be combined with IC technology to implement several evolving sensor applications. With the increased use of integrated MEMS-CMOS devices, methods and systems for testing such integrated devices have become the key to product reliability.

The present invention relates to MEMS (Micro Electro Mechanical Systems).

In various embodiments, the present invention provides methods and structures for a single crystal integrated absolute pressure sensor using an IC casting compatible procedure. In one embodiment, a standard IC program is first used to fabricate a CMOS substrate. One of the pressure sensors is made of a single crystal germanium material. The material is transferred to the layer of the CMOS substrate. At least one capacitive or piezoresistive pressure sensor can be formed. The present invention provides a number of methods of fabricating a capacitive and piezoresistive pressure sensor device.

In one embodiment, the present invention provides a method for fabricating an integrative MEMS pressure sensor device. The method can include providing a substrate component having a surface region, forming a CMOS IC layer overlying the substrate, and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystal germanium wafer can be bonded over the oxidized surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and partially removed and filled with a metallic material to form a via structure. A pressure sensor device can be formed from the wafer and can be fabricated with another sensor formed from the wafer. The pressure sensor and the other sensor share a cavity pressure or have a separate cavity pressure.

Many advantages are realized by embodiments of the invention that are superior to the prior art. For example, embodiments of the present invention provide an integrated MEMS pressure sensor device having structural flexibility with other sensor devices. Due to the monocrystalline body of MEMS and COMS on a single wafer, the smaller grain size and lower parasitic capacitance of the device can be achieved. In addition, the method provides a program and system compatible with conventional semiconductor and MEMS program technologies without substantially modifying conventional devices and programs. Depending on the embodiment, one or more of these advantages can be achieved. These and other advantages are described in more detail below throughout the specification and more particularly hereinafter.

Various additional objects, features, or advantages of the invention will be apparent from the description and accompanying drawings.

100‧‧‧Integral pressure sensing device

110‧‧‧Substrate

120‧‧‧ CMOS layer

121‧‧‧Top metal layer

122‧‧‧ joint plate

130‧‧‧Oxide layer

131‧‧‧Cavity area

140‧‧‧pressure sensor

141‧‧‧through hole structure/metal material

200‧‧‧Integral capacitive pressure sensing device

210‧‧‧Substrate

220‧‧‧ CMOS layer

221‧‧‧Top metal layer

222‧‧‧ joint plate

230‧‧‧ oxide layer

231‧‧‧Cavity area/cavity

240‧‧‧pressure sensor

241‧‧‧through hole structure/metal material

250‧‧‧ sealing layer

300‧‧‧Device/Integrated Pressure Sensing Devices

310‧‧‧Substrate

320‧‧‧ CMOS layer

321‧‧‧Top metal layer

322‧‧‧ joint plate

330‧‧‧Oxide layer

331‧‧‧Cavity area

340‧‧‧pressure sensor

341‧‧‧through hole structure/metal filling through hole

350‧‧‧ Sealing layer

400‧‧‧Integrated pressure sensing device

410‧‧‧Substrate

420‧‧‧ CMOS layer

421‧‧‧Top metal layer

422‧‧‧ joint plate

431‧‧‧ Cavity

432‧‧‧ cavity

440‧‧‧pressure sensor

441‧‧‧through hole structure

442‧‧‧ Another sensor

443‧‧‧ anchor structure

444‧‧‧ MEMS cover

500‧‧‧Integrated pressure sensing device

510‧‧‧Substrate

520‧‧‧ CMOS layer

521‧‧‧Top metal layer

522‧‧‧ joint plate

530‧‧‧Oxide layer

531‧‧‧ Cavity

532‧‧‧ Cavity

540‧‧‧pressure sensor

541‧‧‧through hole structure

542‧‧‧Another sensor

543‧‧‧ anchor structure

544‧‧‧ MEMS cover

600‧‧‧Integrated pressure sensing device

610‧‧‧Substrate

620‧‧‧ CMOS layer

621‧‧‧Top metal layer

622‧‧‧ joint plate

630‧‧‧Oxide layer

631‧‧‧ Cavity

640‧‧‧pressure sensor

641‧‧‧through hole structure

644‧‧‧ Cover

700‧‧‧Integrated pressure sensing device

710‧‧‧Substrate

720‧‧‧ CMOS layer

721‧‧‧Top metal layer

722‧‧‧ joint plate

730‧‧‧Oxide layer

731‧‧‧Cavity area

740‧‧‧pressure sensor

741‧‧‧through hole structure/metal material

745‧‧‧thin piezoelectric resistor

800‧‧‧Integrated pressure sensing device

810‧‧‧Substrate

820‧‧‧ CMOS layer

821‧‧‧Top metal layer

822‧‧‧ joint plate

830‧‧‧Oxide layer

831‧‧‧ cavity

840‧‧‧pressure sensor

841‧‧‧through hole structure/contact

845‧‧‧thin piezoelectric resistor

901‧‧‧Cavity area

910‧‧‧ CMOS substrate

922‧‧‧ joint plate

940‧‧‧Separator/pressure sensor

944‧‧‧Cover structure/cover

960‧‧‧ channel

961‧‧‧ Input 埠

1001‧‧‧Integrated pressure sensing devices/devices

1002‧‧‧ devices

1010‧‧‧Substrate

1020‧‧‧ CMOS layer

1021‧‧‧Top metal layer

1022‧‧‧ joint plate

1030‧‧‧Oxide layer

1031‧‧‧Cavity area

1040‧‧‧pressure sensor

1041‧‧‧through hole structure

1044‧‧‧ cover structure

1061‧‧‧ Input埠

1A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention.

1B illustrates oxidation of one of the integrated body pressure sensor devices according to the embodiment of FIG. 1A. A simplified view of one of the top views of the layer.

2A is a simplified diagram of a cross-sectional view of one of the integrated body pressure sensor devices in accordance with an embodiment of the present invention.

2B is a simplified diagram of a top view of one of the oxide layers of the integrated body pressure sensor device of the embodiment of FIG. 2A.

3A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention.

3B is a simplified diagram of a top view of an oxide layer of an integrated body pressure sensor device in accordance with the embodiment of FIG. 3A.

4A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention.

4B is a simplified diagram of a top view of an oxide layer of an integrated body pressure sensor device in accordance with the embodiment of FIG. 4A.

5A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention.

5B is a simplified diagram of a top view of one of the oxide layers of the integrated body pressure sensor device of the embodiment of FIG. 5A.

6A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention.

6B is a simplified diagram of a top view of one of the oxide layers of the integrated body pressure sensor device of the embodiment of FIG. 6A.

7A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention.

7B is a simplified diagram of a top view of one of the oxide layers of the integrated body pressure sensor device of the embodiment of FIG. 7A.

8A illustrates an integrated body pressure sensor device in accordance with an embodiment of the present invention. A simplified view of one of the cross-sectional views.

Figure 8B is a simplified diagram of a top view of one of the oxide layers of the integrated body pressure sensor device of the embodiment of Figure 8A.

9 is a simplified diagram of a perspective view of one of the integrated body pressure sensor devices in accordance with an embodiment of the present invention.

10A is a simplified diagram of a cross-sectional view of one of the integrated body pressure sensor devices in accordance with an embodiment of the present invention.

10B is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention.

The present invention relates to MEMS (Micro Electro Mechanical Systems). More specifically, embodiments of the present invention provide methods and structures for improving integrated MEMS devices including inertial sensors and the like.

1A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention. This figure may represent one method of fabricating an integrated capacitive pressure sensing device using fusion bonding. The integrated body pressure sensing device 100 includes a pressure sensor (separator) overlying a CMOS substrate (the CMOS layer 120 overlying the substrate 110) having at least one bonding plate 122 and at least one top metal layer 121 overlying the body. ) 140. Pressure sensor 140 may also have one or more via structures 141 coupled to CMOS layer 120. The general practitioner will recognize other variations, modifications, and alternatives.

As shown, a pressure sensor 140 is formed overlying a CMOS substrate comprising a bond pad 122 and a top metal layer 121 that can be fabricated using a standard IC procedure. After patterning the top metal layer, an oxide layer 130 can be deposited and patterned. At least one region of the oxide layer 130 overlying the top metal layer 121 may be removed to create a cavity region 131. In an embodiment, the oxide layer 130 can be part of the CMOS layer 120.

A single crystal germanium (SCS) wafer can be melt bonded to a CMOS substrate in a vacuum chamber, The vacuum chamber can form a vacuum in the cavity region 131 between the CMOS layer and the SCS layer. The SCS layer can be thinned to 20 to 30 microns to form a diaphragm structure of a pressure sensor 140. The SCS layer can be etched to create small holes, which can be filled with a metal material 141 (eg, TiN and W) to form an electrical connection between the SCS layer and the CMOS layer 120. The etching process can include a plasma etch, chemical vapor etch, deep reactive ion etch (DRIE) or other similar procedure.

1B is a simplified diagram of a top view of an oxide layer 130 of an integrated body pressure sensor device in accordance with the embodiment of FIG. 1A. The oxide layer is shown with a substantially circular area removed that corresponds to the area overlying the top metal layer shown in Figure 1A.

2A is a simplified diagram of a cross-sectional view of one of the integrated body pressure sensor devices in accordance with an embodiment of the present invention. This figure may represent one method of fabricating an integrative capacitive pressure sensing device 200 using a seal deposited through a thin film. The integrated body pressure sensing device includes a pressure sensor (diaphragm) overlying a CMOS substrate (the CMOS layer 220 overlying the substrate 210) having at least one bonding plate 222 and at least one top metal layer 221 overlying the integrated body. 240. Pressure sensor 240 can also have one or more via structures 241 coupled to CMOS layer 220.

As shown, a pressure sensor 240 is formed overlying a CMOS substrate comprising a bond pad 222 and a top metal layer 221 that can be fabricated using a standard IC program. After patterning the top metal layer 221, the oxide layer 230 can be deposited and patterned. At least one region of the oxide layer 230 overlying the top metal layer 221 may be removed to create a cavity region 231.

A single crystal germanium (SCS) wafer can be melt bonded to a CMOS substrate in a vacuum chamber that creates a vacuum in the cavity region 231 between the CMOS layer and the SCS layer. The SCS layer can be thinned to 20 to 30 microns to form a diaphragm structure of a pressure sensor 240. The SCS layer can be etched to create small holes, which can be filled with a metal material 241 (eg, TiN and W) to form an electrical connection between the SCS layer and the CMOS layer 220. The etching process can include a plasma etch, chemical vapor etch, deep reactive ion etch (DRIE) or other similar procedure.

Following the etching process, the cavity 231 of the pressure sensor is opened. In a particular embodiment, a dry cleaning process is used to remove one of the photoresist materials used in the etching process. The cavity 231 can be sealed using a thin film deposition process that determines the cavity pressure within the cavity region 231. One of the apertures of the sealing layer 250 overlying the SCS layer is shown in Figure 2A. The pressure and temperature of the deposition procedure can be less than about 1000 Pa and less than about 350 degrees Celsius. The film material may comprise PECVD (plasma enhanced chemical vapor deposition) tantalum nitride or SiO ₂ or the like. The tantalum nitride material provides a good diffusion barrier.

2B is a simplified diagram of a top view of one of the oxide layers 230 of the integrated body pressure sensor device of the embodiment of FIG. 2A. The oxide layer 230 is shown to have two substantially circular regions joined by the removed path, each corresponding to an overlying top metal layer and an underlying layer (shown in Figure 2A) .

3A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention. As shown in FIG. 2A, this figure illustrates another embodiment of using a thin film deposition process to seal various portions of device 300 using sealing layer 350. The integrated body pressure sensing device 300 includes a pressure sensor (separator) overlying a CMOS substrate (the CMOS layer 320 overlying the substrate 310) having at least one bonding plate 322 and at least one top metal layer 321 overlying. ) 340.

In an embodiment, one or more via structures 341 may be formed in one portion of the pressure sensor 340. These via structures 341 or various portions of the oxide layer can provide a possible diffusion path. These diffusion paths or regions can also be sealed using the previously described thin film deposition procedure. These diffusion regions are shown as being sealed by various seal layers from the side of the overlying SCS layer, the overlying metal fill via 341, and the overlying opening to the cavity region 331 (shown in Figure 3A).

3B is a simplified diagram of a top view of one of the oxide layers 330 of the integrated body pressure sensor device of the embodiment of FIG. 3A. This represents an oxide layer similar to that of Figure 2B.

4A illustrates an integrated body pressure sensor device in accordance with an embodiment of the present invention. A simplified view of one of the cross-sectional views. This figure may illustrate one method of fabricating an integrated capacitive pressure sensing device using a sealing procedure with a eutectic bonding. The integrated body pressure sensing device 400 includes a pressure sensor (separator) overlying a CMOS substrate (the CMOS layer 420 of the overlying substrate 410) having at least one bonding plate 422 and at least one top metal layer 421 on the integrated body. ) 440. Pressure sensor 440 can also have one or more via structures 441 coupled to CMOS layer 420. The integrated body pressure sensing device can be integrated with at least one other sensing device.

The method of manufacture may include steps similar to those described with respect to Figures 1A, 1B, 2A, 2B, 3A, and 3B. A standard CMOS-MEMS program can be used. In various embodiments, the design rules can be changed. Similar to Figures 2 and 3, a cavity 431 of the pressure sensor can be opened following a Si DRIE etch process. The cavity 431 of the pressure sensor 440 can be sealed during an Al-Ge eutectic bonding procedure that defines the cavity pressure.

Another sensor 442 is shown adjacent to pressure sensor 440 in FIG. 4A. This other sensor has a MEMS cap 444 that is formed overlying. Another sensor 442 can be a MEMS accelerometer, gyroscope, resonator, or other sensor device. Another sensor can also be used for one of the differential measurements or a reference pressure sensor. In various embodiments, another sensor can be fabricated with the pressure sensor and have a common cavity or a separate cavity. As shown, the sensor 442 can include an anchor structure 443. In an embodiment, the sensor 442 can have a cavity 432 in a defined air pressure environment. In a particular embodiment, the cavities 431 and 432 can have the same cavity pressure.

4B is a simplified diagram of a top view of one of the oxide layers 430 of the integrated body pressure sensor device in accordance with the embodiment of FIG. 4A. Oxide layer 430 is shown to have two removed portions (one substantially circular and one substantially rectangular) joined by a straight path. These regions each correspond to an area underlying the pressure sensor and other sensors (shown in Figure 4A).

5A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention. This figure illustrates one method of fabricating an integrated body pressure sensing device similar to the integrated body pressure sensing device of FIG. 4A. The integrated body pressure sensing device 500 includes The integrated body is overlaid with a pressure sensor (diaphragm) 540 having at least one bonding plate 522 and at least one top metal layer 521 processed CMOS substrate (the CMOS layer 520 of the overlying substrate 510). Pressure sensor 540 can also have one or more via structures 541 coupled to CMOS layer 520. Here, the two sensor devices have separate cavities.

Another sensor 542 is shown adjacent to pressure sensor 540 in FIG. 5A. This other sensor has a MEMS cap 544 formed overlying it. Another sensor 542 can be a MEMS accelerometer, gyroscope, resonator, or other sensor device. Another sensor can also be used for one of the differential measurements or a reference pressure sensor. In various embodiments, another sensor can be fabricated with the pressure sensor and have a common cavity or a separate cavity. As shown, the sensor 542 can include an anchor structure 543. In an embodiment, the sensor 542 can have a cavity 532 in a defined air pressure environment. In a particular embodiment, the cavities 531 and 532 can have the same cavity pressure.

5B is a simplified diagram of a top view of one of the oxide layers 530 of the integrated body pressure sensor device of the embodiment of FIG. 5A. This oxide layer 530 shows two separate cavities. The cavity on the left side is similar to the cavity depicted in Figures 1A and 1B and has two substantially circular regions joined. The cavity on the right side is a substantially rectangular area. These two regions are each underlying the pressure sensor 540 and another sensor 542.

6A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention. This figure illustrates one method of fabricating an integrated body pressure sensing device similar to the integrated body pressure sensing device of FIG. 4A. Here, two pressure sensors 640 are shown, with another sensor being used for the differential measurement simulation or reference pressure sensor. The integrated body pressure sensing device 600 includes a pressure sensor (separator) overlying a CMOS substrate (the CMOS layer 620 of the overlying substrate 610) having at least one bonding plate 622 and at least one top metal layer 621 overlying the body. ) 640. Pressure sensor 640 can also have one or more via structures 641 coupled to CMOS layer 620. Here, the two sensor devices have connected cavities. The pressure sensor structure that is not exposed to the surrounding environment (enclosed in the cover 644) can be compared with another A pressure sensor is referenced to counteract the effects of temperature and stress on unrelated pressures.

6B is a simplified diagram of a top view of one of the oxide layers 630 of the integrated body pressure sensor device of the embodiment of FIG. 6A. This oxide layer 630 exhibits two cavity regions similar to the cavity region of Figure 1A. The two regions have a larger circular area and a smaller circular area. Each of these circular regions is also connected by a straight path (shown in Figure 6B).

7A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention. This figure may represent one method of fabricating an integrative piezoresistive sensing device using a sealing procedure with a molten joint. The integrated body pressure sensing device 700 includes a pressure sensor (separator) overlying a CMOS substrate (the CMOS layer 720 overlying the substrate 710) having at least one bonding plate 722 and at least one top metal layer 721 overlying the body. ) 740. Pressure sensor 740 can also have one or more via structures 741 coupled to CMOS layer 720. At least one piezoresistor 745 can be formed in a portion of the integrated body pressure sensor 740. The general practitioner will recognize other variations, modifications, and alternatives.

As shown, a pressure sensor is formed overlying a CMOS substrate comprising a bond pad and a top metal layer that can be fabricated using a standard IC program. After patterning the top metal layer, an oxide layer 730 can be deposited and patterned. At least one region of the oxide layer 730 can be removed to create a cavity region 731.

A single crystal germanium (SCS) wafer can be melt bonded to a CMOS substrate in a vacuum chamber that creates a vacuum in the cavity region 731 between the CMOS layer and the SCS layer. The SCS layer can be thinned to 20 to 30 microns to form a diaphragm structure of a pressure sensor 740. An ion implantation procedure can be used to form heavily doped regions, such as p-type doped regions, to provide contact to the metal regions. Another ion implantation procedure can be used to form a moderately doped region, such as a moderately p-doped region for a piezoresistor. The SCS layer can be etched to create small holes that can be filled with a metal material 741 (eg, TiN and W) to form an electrical connection between the SCS layer and the CMOS layer. The etching process may include a plasma etching, chemical vapor etching Engraved, deep reactive ion etching (DRIE) or other similar procedures.

7B is a simplified diagram of a top view of one of the oxide layers 730 of the integrated body pressure sensor device in accordance with the embodiment of FIG. 7A. Here, the oxide layer 730 is shown with one of the substantially square regions removed. This area corresponds to the area underlying the piezoresistors shown in Figure 7A.

8A is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention. This figure may represent one method of fabricating an integrative piezoresistive sensing device using a film sealing process. The integrated body pressure sensing device 800 includes a pressure sensor (separator) overlying a CMOS substrate (the CMOS layer 820 of the overlying substrate 810) having at least one bonding plate 822 and at least one top metal layer 821 overlying the body. ) 840. Pressure sensor 840 can also have one or more via structures 841 coupled to CMOS layer 820. At least one piezoresistor 845 can be formed in a portion of the integrated body pressure sensor 840. The general practitioner will recognize other variations, modifications, and alternatives.

Here, the manufacturing method incorporates the steps described with respect to FIGS. 7A and 2A. The procedure is similar to the procedure described in Figure 7A for etching up to the MEMS wafer or SCS layer. An ion implantation procedure can be used to form a heavily p-doped region, and another ion implantation procedure can be used to form a moderately p-doped region. The SCS layer can be etched to form small holes, some of which can be deposited by TiN and W deposition to form contacts 841 to the metal layer.

Following the etching process, the cavity 831 of the pressure sensor is opened. In a particular embodiment, a dry cleaning process is used to remove one of the photoresist materials used in the etching process. The cavity 831 can be sealed using a thin film deposition process that determines the cavity pressure within the cavity region. The pressure and temperature of the deposition procedure can be less than about 1000 Pa and less than about 350 degrees Celsius. The film material may comprise PECVD (plasma enhanced chemical vapor etch) tantalum nitride or SiO2 or the like. The tantalum nitride material provides a good diffusion barrier.

Figure 8B is a simplified diagram of a top view of one of the oxide layers 830 of the integrated body pressure sensor device of the embodiment of Figure 8A. Oxide layer 830 is shown to have one of the removed essence The upper square area and one of the substantially circular areas removed. These areas are connected by a straight path. Each of these regions corresponds to a region underlying the piezoresistor and the sealing layer.

9 is a simplified diagram of a perspective view of one of the integrated body pressure sensor devices 900 in accordance with an embodiment of the present invention. As shown, one of the cover structures 944 having at least one channel 960 can be formed to overlie the pressure sensor 940 or sensor combination. At least one of the channels 960 can be an isolated input channel that can have one of the input ports 961 in one of the cover structures 944 and a cavity port that is coupled to the cavity region 901 within the cover structure 944. In an embodiment, the cover 944 with a channel protects the diaphragm or diaphragm 940 of the pressure sensor from mechanical damage during assembly of the package. As previously described in FIG. 1A, the diaphragm or diaphragm 940 can be formed by thinning a single crystal germanium wafer overlying one of the CMOS substrates 910 having the bond pads 922. Of course, there are other changes, modifications, and alternatives.

10A is a simplified diagram of a cross-sectional view of one of the integrated body pressure sensor devices in accordance with an embodiment of the present invention. This figure may represent a cross-sectional view of one of the devices shown in FIG. The integrated body pressure sensing device 1001 includes an CMOS substrate (the CMOS layer 1020 overlying the substrate 1010) that is encapsulated in a cover structure 1044 and overlaid with at least one bonding plate 1022 and at least one top metal layer 1021. A pressure sensor (diaphragm) 1040. Pressure sensor 1040 can also have one or more via structures 1041 coupled to CMOS layer 1020.

In a particular embodiment, device 1001 can include one of input ports 1061 in cover structure 1044 that is shown to be similar to the entrance of one of the channels 960 (shown by dashed lines) in FIG. In an embodiment, the cover 944 with a channel protects the diaphragm or diaphragm 940 of the pressure sensor from mechanical damage during assembly of the package. This channel can be simultaneously etched into the chamber of the pressure sensor. In a particular embodiment, as shown in Figure 10A, the input turns are formed laterally. The general practitioner will recognize other variations, modifications, and alternatives.

As shown, a pressure sensor 1040 is formed overlying the CMOS substrate including the bonding pad 1022 and the top metal layer 1021 and the oxide layer 1030, which can be used with a standard IC program. Manufacturing. Here, the oxide layer is part of the initial CMOS layer 1020 and is shown over the bond pad 1022. At least one region of the oxide layer 1030 overlying the top metal layer 1021 can be removed to create a cavity region 1031.

10B is a simplified diagram of one cross-sectional view of an integrated body pressure sensor device in accordance with an embodiment of the present invention. Device 1002 is identical to device 1001 of Figure 10A but does not have a cover structure 1044.

It should be understood that the examples and embodiments described herein are for illustrative purposes only, and that various modifications and changes in accordance with the examples and embodiments will be suggested to those skilled in the art and And the scope and scope of the patent application.

100‧‧‧Integral pressure sensing device

110‧‧‧Substrate

120‧‧‧ CMOS layer

121‧‧‧Top metal layer

122‧‧‧ joint plate

130‧‧‧Oxide layer

131‧‧‧Cavity area

140‧‧‧pressure sensor

141‧‧‧through hole structure/metal material

Claims (14)

A method for fabricating an integrated pressure sensing device, the method comprising: providing a substrate member having a surface region; forming a CMOS IC layer overlying the surface region, the CMOS IC layer having a CMOS surface region; Forming an oxide layer overlying the CMOS surface region, the oxide layer having an oxidized surface region; removing at least a portion of the oxide layer to form at least a first cavity region; bonding a top surface of the oxidized surface region Wafer wafer to seal the first cavity region; thin the single crystal germanium wafer to a desired thickness; remove the single crystal germanium wafer and at least a portion of the oxide layer to form At least one connection path of the CMOS IC layer; and depositing a metal material in the at least one connection path to form at least one via structure. The method of claim 1, wherein the bonding of the single crystal germanium wafer comprises a fusion bonding process or a eutectic bonding process, wherein the bonding of the single crystal germanium wafer is in a vacuum formed in the cavity region Executed in one of the vacuum chambers. The method of claim 1, further comprising removing at least a portion of the single crystal germanium wafer to form a cavity path; and forming a thin film material overlying the single crystal germanium wafer; wherein the thin film material substantially seals the void a film path; wherein the film material substantially seals at least one diffusion path of the integrated body pressure sensing device; wherein the film material comprises a PECVD tantalum nitride or a SiO ₂ material; and wherein the film has a pressure of less than 1000 Pa and A deposition procedure is performed at one of temperatures less than one of 350 degrees Celsius to form the film material. The method of claim 1, wherein the desired thickness is about 20 to 30 microns. The method of claim 1, further comprising forming a pressure sensor from the first portion of the single crystal germanium wafer and forming another sensor from the second portion of the single crystal germanium wafer; forming the overlying layer a cover structure of another sensor, the cover structure having a cover cavity region; wherein the forming of the cover structure includes a eutectic bonding process to substantially seal the cavity path; wherein the second portion is Forming the other sensor forms a cavity path through which the lid cavity region is coupled to the cavity region; wherein the lid cavity region is separated from the cavity region. The method of claim 5, wherein the cover structure comprises at least one isolated input channel having an input port configured to protect the pressure sensor from mechanical damage. The method of claim 5, wherein the other sensor comprises an accelerometer, a gyro sensor, a resonator, a magnetic field sensor, a pressure sensor or a reference pressure sensor. The method of claim 5, wherein the pressure sensor comprises a capacitive sensing pressure sensor or a piezoresistive sensing pressure sensor. The method of claim 1, further comprising a first ion implantation process to form a heavily p-doped region in a first portion of the single crystal germanium wafer; and a second ion implantation process to A moderately p-doped region is formed in a second portion of the single crystal germanium wafer. The method of claim 1, further comprising forming at least one piezoresistor in a portion of the single crystal germanium wafer, the at least one piezoresistor being electrically coupled to the at least one via structure. The method of claim 1, wherein the metallic material comprises TiN and W materials. The method of claim 1, further comprising removing a second portion of the single crystal germanium wafer to expose a cavity path coupled to the first cavity region, the second single crystal germanium wafer being removed A portion is located outside of the sealed first cavity region. The method of claim 1, further comprising removing a second portion of the oxide layer to form a second cavity region and a path connecting the first cavity region and the second cavity region, The second cavity region is located outside of the sealed first cavity region. The method of claim 13, further comprising removing a second portion of the single crystal germanium wafer over the second cavity region to expose a cavity path coupled to the first cavity region, the single crystal germanium The second portion of the wafer that is removed is located outside of the sealed first cavity region.