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TWI513566B - Manufacturing method of forming mold - Google Patents

Manufacturing method of forming mold Download PDF

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Publication number
TWI513566B
TWI513566B TW098126475A TW98126475A TWI513566B TW I513566 B TWI513566 B TW I513566B TW 098126475 A TW098126475 A TW 098126475A TW 98126475 A TW98126475 A TW 98126475A TW I513566 B TWI513566 B TW I513566B
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TW
Taiwan
Prior art keywords
resist
mold
molding die
molding
substrate
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TW098126475A
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Chinese (zh)
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TW201012617A (en
Inventor
Go Tazaki
Motohiro Fukuda
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Kuraray Co
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Publication of TWI513566B publication Critical patent/TWI513566B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/38Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842Manufacturing moulds, e.g. shaping the mould surface by machining
    • B29C33/3857Manufacturing moulds, e.g. shaping the mould surface by machining by making impressions of one or more parts of models, e.g. shaped articles and including possible subsequent assembly of the parts
    • B29C33/3878Manufacturing moulds, e.g. shaping the mould surface by machining by making impressions of one or more parts of models, e.g. shaped articles and including possible subsequent assembly of the parts used as masters for making successive impressions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/38Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261Preparing a master, e.g. exposing photoresist, electroforming

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Micromachines (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Description

成形模具之製造方法Manufacturing method of forming mold

本發明係關於成形模具及成形模具之製造方法。The present invention relates to a method of manufacturing a forming die and a forming die.

對於液晶等之顯示器構件、DVD等之記錄媒體、行動電話構件、DNA晶片等的生物晶片等,採用形成有以微米級、次微米級為中心之微細凹凸構造的成形品,另外,作為形成該等成形品之材料,可採用樹脂、矽或玻璃等。For a display member such as a liquid crystal display device, a recording medium such as a DVD, a mobile phone device, or a biochip such as a DNA wafer, a molded article having a fine uneven structure centering on a micron order and a submicron order is used, and the molded article is formed. The material of the molded article may be resin, enamel or glass.

作為形成有此種微細凹凸構造之樹脂成形品的形成方法,可列舉射出成形、奈米壓印成形、壓花成形、輥式轉印成形等。另外,作為形成有微細凹凸構造之矽成形品的形成方法,可列舉矽之乾式蝕刻及濕式蝕刻。再者,作為形成有微細凹凸構造之玻璃成形品的形成方法,可列舉玻璃之乾式蝕刻及濕式蝕刻等。Examples of the method of forming the resin molded article having such a fine uneven structure include injection molding, nanoimprint molding, emboss molding, roll transfer molding, and the like. Moreover, as a method of forming the tantalum molded article having the fine uneven structure, dry etching and wet etching of tantalum are exemplified. In addition, examples of the method of forming the glass molded article having the fine uneven structure include dry etching of glass and wet etching.

在該等方法中,採用表面具有微細凹凸構造之模具的樹脂成形法,作為通用構件的製造方法,能實現低成本,已被普遍使用。根據此樹脂成形法,採用具有與製品之微細凹凸構造對應的構造之成形模具。藉由將樹脂注入此成形模具,可獲得表面具有微細凹凸構造之樹脂成形品。若由具有耐久性之金屬材料來形成此成形模具的話,可從一個成形模具獲得大量之樹脂成形品,可實現低成本。Among these methods, a resin molding method using a mold having a fine uneven structure on the surface is used as a method for producing a general-purpose member, and it is low-cost and has been widely used. According to this resin molding method, a molding die having a structure corresponding to the fine uneven structure of the product is used. By injecting a resin into the molding die, a resin molded article having a fine uneven structure on the surface can be obtained. When the molding die is formed of a metal material having durability, a large number of resin molded articles can be obtained from one molding die, and low cost can be achieved.

作為由此種金屬材料形成之成形模具的製造方法,具有:(1)在採用與X光、電子束、雷射光、紫外光等之活性能量光反應之阻劑材料來形成微細凹凸構造體(凹凸圖案)後(以下,亦簡稱為微影術),藉由電鍍來堆積金屬,以獲得成形模具的方法;(2)在直接切削金屬或玻璃而形成微細凹凸構造體後,藉由電鍍來堆積金屬,以獲得成形模具的方法;(3)在蝕刻矽或玻璃而形成微細凹凸構造體後,藉由電鍍來堆積金屬,以獲得成形模具的方法;及(4)直接切削模具用之金屬,以形成微細凹凸構造體的方法等。The method for producing a molding die formed of such a metal material includes: (1) forming a fine concavo-convex structure by using a resist material that reacts with active energy light such as X-ray, electron beam, laser light, or ultraviolet light; After the concavo-convex pattern) (hereinafter, also referred to as lithography for short), a method of depositing metal by electroplating to obtain a molding die; (2) after directly cutting a metal or glass to form a fine concavo-convex structure, by electroplating a method of depositing a metal to obtain a molding die; (3) a method of depositing a metal by electroplating to obtain a molding die after etching a crucible or glass to form a fine concavo-convex structure; and (4) a metal for directly cutting a mold A method of forming a fine uneven structure or the like.

考慮到微細凹凸構造體(凹凸圖案)之大小、形狀的自由度、面內均一性及成本,藉由微影術及電鍍來製造成形模具的方法,較為適宜。採用藉由微影術及電鍍來製造成形模具的方法所製造之成形模具,進行樹脂成形之製程,被稱為LIGA製程,且已廣泛普及。In view of the size, the degree of freedom of the shape, the in-plane uniformity, and the cost of the fine concavo-convex structure (concave-convex pattern), a method of manufacturing a molding die by lithography and electroplating is preferable. A molding die manufactured by a method of manufacturing a molding die by lithography and electroplating, which is a process of resin molding, is called a LIGA process and has been widely used.

如第2A~2E圖所示,用於LIGA製程之成形模具的製造步驟之一例,係藉由母模形成步驟(第2A圖)、通電膜形成步驟(第2B圖)、補強層形成步驟(第2C圖)及母模除去步驟(第2D圖)所進行,且可依情況來追加平滑化步驟(第2E圖)。As shown in FIGS. 2A to 2E, an example of a manufacturing process of a molding die used in the LIGA process is a master molding step (Fig. 2A), an energization film forming step (Fig. 2B), and a reinforcing layer forming step ( The second step (Fig. 2C) and the master mold removing step (Fig. 2D) are performed, and a smoothing step (Fig. 2E) may be added as the case may be.

其中,在第1步驟的母模形成步驟(第2A圖)中,在基板32上形成根據阻劑而得之凹凸圖案(阻劑構造體)31。基板可採用玻璃或矽等之平面基板,在此基板32上形成阻劑膜,利用照射活性能量光、例如UV光(365nm),藉由阻劑膜之溶解/非溶解的反差,形成作為母模之基於阻劑的微細凹凸圖案31。In the master mold forming step (FIG. 2A) of the first step, a concave-convex pattern (resistant structure) 31 obtained from a resist is formed on the substrate 32. The substrate may be a flat substrate such as glass or tantalum, and a resist film is formed on the substrate 32, and is formed by irradiating active energy light, for example, UV light (365 nm), by the contrast of dissolution/non-dissolution of the resist film. The mold is based on a resist-based fine concavo-convex pattern 31.

接著,在第2步驟的通電膜形成步驟(第2B圖)中,在由第1步驟獲得之基板32及凹凸圖案31的全面形成通電膜33。通電膜形成步驟(第2B圖)係在對母模之整個表面進行金屬蒸鍍或無電解電鍍等的表面賦予通電性(導電性)之步驟。在此通電膜形成步驟(第2B圖)中,若能使得對電鍍電流之電阻適度減小則較佳,故通常為0.1~0.3μm程度之薄膜。Next, in the energization film forming step (Fig. 2B) of the second step, the electrification film 33 is formed on the entire surface of the substrate 32 and the concavo-convex pattern 31 obtained in the first step. The energization film forming step (Fig. 2B) is a step of imparting conductivity (conductivity) to the surface of the entire surface of the master mold by metal vapor deposition or electroless plating. In the energization film forming step (Fig. 2B), it is preferable to appropriately reduce the electric resistance of the plating current, so that the film is usually about 0.1 to 0.3 μm.

接著,在第3步驟的補強層形成步驟中,利用在第2步驟獲得之基板32的通電膜33,在通電膜33上形成電鍍層34。Next, in the reinforcing layer forming step of the third step, the plating layer 34 is formed on the conductive film 33 by the dielectric film 33 of the substrate 32 obtained in the second step.

此補強層形成步驟實質上是電鍍步驟,為了在基於阻劑之微細凹凸圖案31的表面均勻地堆積金屬,例如,在堆積300μm之金屬的電鍍層(膜厚)34之表面(作為模具,為成形面之相反側,成為背面之面)34a,形成有反映了母模之微細凹凸構造且以元件符號34b所示之凹凸構造。This reinforcing layer forming step is substantially a plating step for uniformly depositing a metal on the surface of the resist-based fine uneven pattern 31, for example, on the surface of a plating layer (film thickness) 34 of a metal of 300 μm (as a mold) On the opposite side of the molding surface, the surface of the back surface 34a is formed with a concavo-convex structure indicated by the reference numeral 34b reflecting the fine concavo-convex structure of the master mold.

亦即,在模具之成形面形成有與母模對應之微細凹凸構造,在其相反側之背面34a形成有反映了母模之凹凸圖案31的微細凹凸構造34b。其中,反映了母模係指與母模具有相同之形狀,但嚴密地講並非完全為相同形狀。亦即,背面34a之凹凸構造34b,實際上與凹凸圖案31不具相同高度,例如,高度略低、或寬度較小或較大等,表示並非完全相同。In other words, a fine concavo-convex structure corresponding to the master mold is formed on the molding surface of the mold, and a fine concavo-convex structure 34b reflecting the concavo-convex pattern 31 of the master mold is formed on the back surface 34a on the opposite side. Among them, it is reflected that the master mold has the same shape as the master mold, but strictly speaking, it is not completely the same shape. That is, the concavo-convex structure 34b of the back surface 34a does not have the same height as the concavo-convex pattern 31, and for example, the height is slightly lower, or the width is smaller or larger, and the same is not the same.

接著,在第4步驟的母模除去步驟(第2D圖)中,從在第3步驟獲得之電鍍層34除去基板32及阻劑構造體31,製作模具40。亦可藉由追加平滑化步驟(第2E圖)來製成將背面34a加以平坦化的模具50,其中該平滑化步驟係藉由研磨等來除去此模具40之背面的凹凸構造34b。Next, in the master mold removing step (Fig. 2D) of the fourth step, the substrate 32 and the resist structure 31 are removed from the plating layer 34 obtained in the third step, and the mold 40 is produced. The mold 50 for flattening the back surface 34a may be formed by adding a smoothing step (Fig. 2E), wherein the smoothing step removes the uneven structure 34b on the back surface of the mold 40 by polishing or the like.

在使用背面具有反映了母模之微細凹凸構造體之凹凸的模具(上述模具40)進行成形的情況,會產生因背面之凹凸而容易使模具變形且成形性顯著變差的問題,或在成形品之表面側產生對應於模具背面的凹凸之轉印痕跡的問題。為了解決此問題,已檢討了將背面研磨而達成平坦化的方法(專利文獻1),或於背面之凹凸內填入環氧樹脂等而達成平坦化的方法。When molding is performed using a mold (the above-described mold 40) having irregularities on the back surface of the fine concavo-convex structure of the master mold, the mold is easily deformed by the unevenness on the back surface, and the moldability is remarkably deteriorated, or the molding is performed. The surface side of the product has a problem corresponding to the transfer mark of the unevenness on the back surface of the mold. In order to solve this problem, a method of planarizing the back surface polishing (Patent Document 1) or a method of flattening an epoxy resin or the like into the unevenness of the back surface has been reviewed.

[專利文獻1]日本特開昭62-232733號[Patent Document 1] Japanese Patent Laid-Open No. 62-232733

然而,在由背面研磨而獲得之成形模具(上述模具50)中,因除去背面34a之凹凸構造34b用的研磨而使得金屬產生熱延伸,所以,會有成形模具之成形面的平面性顯著變差的問題。However, in the molding die (the above-described mold 50) obtained by the back grinding, since the metal is thermally extended by the polishing for removing the uneven structure 34b of the back surface 34a, the flatness of the molding surface of the molding die is significantly changed. Poor question.

另一方面,在將樹脂填入背面而獲得之成形模具中,會有因熱傳導之降低而造成成形性變差的問題,及因充填樹脂之劣化、剝離等而造成耐久性變差的問題。On the other hand, in the molding die obtained by filling the resin into the back surface, there is a problem that the moldability is deteriorated due to a decrease in heat conduction, and the durability is deteriorated due to deterioration or peeling of the filler resin.

本發明係用以解決上述問題而開發完成者,其目的在於,提供一種成形模具,係具備轉印有基於母模之微細凹凸構造的成形面之成形模具,其能確保成形面之平面性並具有耐久性。The present invention has been made in order to solve the above problems, and an object of the invention is to provide a molding die having a molding die on which a molding surface based on a fine uneven structure of a master mold is transferred, which can ensure the planarity of the molding surface and Durable.

本發明者等,經對應予解決之上述問題點作了刻意研究的結果,在具有通電膜之基板上,藉由微影術形成基於阻劑之凸狀構造體,並由基板及阻劑構造體形成作為母模之凹凸構造體。然後,藉由電鑄,僅在未形成有阻劑的基板上,僅堆積與基於阻劑之凸狀構造體相同高度的金屬。然後,透過通電膜,在基板的表面同樣進行電鑄,藉由除去成為母模之可通電的基板(以下,稱為通電基板)及基於阻劑之凸狀構造體,獲得壓模(成形模具)。藉由此種步驟所製造之壓模的背面平坦,不需要研磨或充填樹脂。因此,發現可獲得平面性優良且熱傳導性均勻之成形模具。The inventors of the present invention have deliberately studied the above-mentioned problems corresponding to the problems, and formed a convex structure based on a resist by lithography on a substrate having an energized film, and constructed of a substrate and a resist. The body forms a concave-convex structure as a master. Then, by electroforming, only the metal having the same height as the convex structure based on the resist is deposited on the substrate on which the resist is not formed. Then, electroforming is performed on the surface of the substrate by the energization film, and the mold which can be energized by the master mold (hereinafter referred to as a current-carrying substrate) and the convex structure based on the resist are removed to obtain a stamper (forming mold) ). The back surface of the stamper produced by such a step is flat, and it is not necessary to grind or fill the resin. Therefore, it has been found that a molding die excellent in planarity and uniform in thermal conductivity can be obtained.

亦即,本發明係在成形面具有微細凹凸構造的成形模具之製造方法,該方法包含以下步驟。That is, the present invention is a method for producing a molding die having a fine uneven structure on a molding surface, and the method comprises the following steps.

母模形成步驟(第1步驟),使用在基板之至少一表面上具有通電部之通電基板,並對該通電部賦予基於阻劑之微細的凸狀阻劑構造體而形成母模。In the master mold forming step (first step), a conductive substrate having an energization portion on at least one surface of the substrate is used, and a fine convex resist structure based on a resist is applied to the current-carrying portion to form a master mold.

金屬構造形成步驟(第2步驟),在該通電部析出厚度是相當於該阻劑構造體之高度的金屬,藉以形成金屬構造體。In the metal structure forming step (second step), a metal having a thickness corresponding to the height of the resist structure is deposited in the current-carrying portion, thereby forming a metal structure.

通電膜形成步驟(第3步驟),在該阻劑構造體之表面形成通電膜。In the energization film forming step (third step), an energization film is formed on the surface of the resist structure.

補強層形成步驟(第4步驟),藉由電鍍處理,在該通電膜上形成補強層;及母模除去步驟(第5步驟),除去該母模,形成表面具有基於該金屬構造體之微細凹凸圖形的模具。a reinforcing layer forming step (fourth step), forming a reinforcing layer on the conductive film by a plating treatment; and a master removing step (fifth step), removing the master mold, and forming a surface having a fineness based on the metal structure The mold of the bump pattern.

在此,包含第1步驟~第5步驟,係指依序執行第1步驟~第5步驟,但亦意味著包含可在此等步驟之間追加其他步驟的情況。亦即,其明確表明以下意味,例如,在第3步驟之通電膜形成步驟中,亦可於賦予通電膜之前,包含形成通電膜用之周知的前處理步驟。Here, the first to fifth steps are included, and the first to fifth steps are sequentially performed, but it is also included that other steps can be added between these steps. That is, it is clearly indicated that, for example, in the energization film forming step of the third step, a well-known pretreatment step for forming an energization film may be included before the energization film is applied.

根據本發明,可基於微影術及電鍍之方法,獲得轉印有基於母模之微細凹凸構造的金屬製成形面,另外,在與成形面對向之背面,未形成反映了母模之微細凹凸構造,亦即具有實質上平滑之背面。According to the present invention, a metal-shaped surface to which a fine uneven structure based on a master mold is transferred can be obtained based on a method of lithography and electroplating, and a fine surface reflecting the mother mold is not formed on the back surface facing the forming surface. The embossed structure, that is, has a substantially smooth back surface.

藉此,提供一種成形模具,係具備轉印有基於母模之微細凹凸構造的成形面之成形模具,其成形面由金屬構成,從而能確保耐久性,另外,因實質上具有平滑之背面,所以能確保成形面之平面性。In view of the above, a molding die having a molding surface on which a fine uneven structure based on a master mold is transferred is provided, and the molding surface is made of metal to ensure durability, and has a smooth back surface. Therefore, the planarity of the forming surface can be ensured.

參照圖面,說明用於實施本發明之最佳實施形態的一例,但本發明並不侷限於以下之實施形態。An example of a preferred embodiment for carrying out the invention will be described with reference to the drawings, but the invention is not limited to the embodiments described below.

第1A~第1E圖為模式性說明本發明之實施形態的成形模具之製造中的各步驟之構成的剖視圖。1A to 1E are cross-sectional views schematically illustrating the configuration of each step in the production of a molding die according to an embodiment of the present invention.

在此,第1A圖為藉由第1步驟的母模形成步驟所獲得之剖視圖,顯示通電基板12上形成有基於阻劑之微細之凸狀阻劑構造體11的母模10A。另外,第1B圖為藉由第2步驟的金屬構造形成步驟所獲得之剖視圖,而厚度是與藉由母模形成步驟獲得之阻劑構造體11的高度相當之金屬構造體13,被賦予在未形成有阻劑構造體11之通電部12a上。另外,第1C圖為藉由第3步驟的通電膜形成步驟所獲得之剖視圖,覆蓋藉由上述第1及第2步驟獲得之阻劑構造體11及金屬構造體13的表面,形成通電膜14。另外,第1D圖為藉由第4步驟的補強層形成步驟所獲得之剖視圖,在藉由第3步驟獲得之通電膜14上,藉由電鍍處理形成補強層15。又,第1E圖為說明藉由第5步驟的母模除去步驟所獲得本發明的成形模具(主模)之剖視圖,在藉由第4步驟形成補強層後,除去作為母模之通電基板12及阻劑構造體11,獲得表面具有基於金屬構造體13之微細凹凸圖案的成形模具。Here, FIG. 1A is a cross-sectional view obtained by the master mold forming step of the first step, and shows the mother mold 10A on which the conductive resist structure 11 based on the resist is formed on the conductive substrate 12. Further, Fig. 1B is a cross-sectional view obtained by the metal structure forming step of the second step, and the metal structure 13 having a thickness corresponding to the height of the resist structure 11 obtained by the master molding step is imparted thereto. The energization portion 12a of the resist structure 11 is not formed. In addition, FIG. 1C is a cross-sectional view obtained by the energization film forming step of the third step, covering the surfaces of the resist structure 11 and the metal structure 13 obtained by the first and second steps, thereby forming the dielectric film 14 . Further, Fig. 1D is a cross-sectional view obtained by the reinforcing layer forming step of the fourth step, and the reinforcing layer 15 is formed by electroplating on the dielectric film 14 obtained by the third step. Further, Fig. 1E is a cross-sectional view showing the molding die (main mold) of the present invention obtained by the master mold removing step of the fifth step, and after the reinforcing layer is formed by the fourth step, the energized substrate 12 as the master mold is removed. The resist structure 11 is obtained as a molding die having a fine concavo-convex pattern based on the metal structure 13 on the surface.

以下,根據該等第1A~第1E圖依序進行說明。Hereinafter, the description will be sequentially made based on the first to third embodiments.

如第1A圖所示,在形成母模10A之第1步驟(母模形成步驟)中,依所需之排列使微細之凸狀阻劑構造體11形成於通電基板12上,並在通電基板12之上方確保未形成有阻劑構造體11之上部空間13'。As shown in FIG. 1A, in the first step (master mold forming step) of forming the master mold 10A, the fine convex resist structure 11 is formed on the energized substrate 12 in accordance with the desired arrangement, and the substrate is energized. Above the 12, it is ensured that the upper space 13' of the resist structure 11 is not formed.

在此,通電基板12上之阻劑構造體11的形成方法並無特別限定,例如,可採用基於通常之光微影術的方法。在基於此種光微影術的方法中,例如,包含阻劑層之賦予步驟、圖案處理步驟及顯像步驟。在阻劑之賦予步驟中,對基板上賦予厚度是相當於所需之凹凸深度的阻劑層。另外,在圖案處理步驟及顯像步驟中,使阻劑層透過光罩等或藉由適宜之方法而依所需之排列,將阻劑層之一部分依照圖案加以除去的步驟。藉此,依圖案除去以預定厚度所賦予之阻劑,藉以形成第1A圖所示之母模10A,該母模10A係將剩餘之阻劑構造體11賦予於通電基板12上而得者。Here, the method of forming the resist structure 11 on the current-carrying substrate 12 is not particularly limited, and for example, a method based on ordinary photolithography can be employed. In the method based on such photolithography, for example, a step of imparting a resist layer, a pattern processing step, and a developing step are included. In the step of imparting a resist, a resist layer having a thickness corresponding to a desired unevenness is applied to the substrate. Further, in the patterning step and the developing step, the resist layer is removed by a mask or the like or by a suitable method, and a part of the resist layer is removed in accordance with the pattern. Thereby, the resist applied by a predetermined thickness is removed in accordance with the pattern, whereby the master 10A shown in FIG. 1A is formed, and the master 10A is obtained by applying the remaining resist structure 11 to the conductive substrate 12.

作為使用之阻劑材料,若在母模形成步驟(第1步驟)、金屬構造形成步驟(第2步驟)、通電膜形成步驟(第3步驟)、補強層形成步驟(第4步驟)等之各步驟中,具備不變形等而能維持形態之程度的特性,且具有能在最終之母模除去步驟(第5步驟)加以除去的特性的話,該材料並不受特別限定,而可廣泛採用。另外,亦可依作為目的之阻劑構造體的寬度、高度、間距及形狀,適宜選取。The resist material to be used is a master mold forming step (first step), a metal structure forming step (second step), an energized film forming step (third step), and a reinforcing layer forming step (fourth step). In each step, the material has a property of maintaining the morphology without deformation or the like, and has a property that can be removed in the final master mold removal step (the fifth step). The material is not particularly limited and can be widely used. . In addition, the width, height, pitch, and shape of the resist structure as the object may be appropriately selected.

作為使用之阻劑材料,可列舉例如能與X光、電子束、雷射光、紫外光等之活性能量光反應之阻劑材料。As the resist material to be used, for example, a resist material which can react with active energy light such as X-ray, electron beam, laser light, or ultraviolet light can be cited.

例如,在採用紫外光之情況,可列舉酚醛系樹脂、重鉻酸系樹脂、聚乙烯醇肉桂酸酯系樹脂、疊氮系樹脂、環氧系樹脂等。For example, in the case of using ultraviolet light, a phenol resin, a dichromic resin, a polyvinyl alcohol cinnamate resin, an azide resin, an epoxy resin, or the like can be given.

另外,亦可列舉出對負阻劑或正阻劑上照射i光(365nm)之近紫外光,形成對與鉻罩之二維圖案對應的溶劑之溶解/非溶解的反差,藉由溶劑顯像而獲得3維構造的方法。In addition, it is also possible to illuminate the near-ultraviolet light of the i-light (365 nm) on the negative resist or the positive resist to form a contrast of dissolution/non-dissolution of the solvent corresponding to the two-dimensional pattern of the chrome cover, by solvent A method of obtaining a 3-dimensional structure like this.

本發明之通電基板12係指在至少一表面具有通電性(導電性)的部位(通電部12a)之基板,該通電部12a係從阻劑材料能形成母模10A之程度的表面特性及通電基板中選出。可列舉出例如:鎳、鋁、銅、鉻、金、白金等之金屬、不鏽鋼等之合金,藉由蒸鍍、濺鍍或無電解電鍍等在表面堆積鎳、鋁、銅、鉻、金、白金等而成之玻璃、矽、樹脂。上述該些可依阻劑構造體11之形成方法而適宜選出。The current-carrying substrate 12 of the present invention is a substrate having a portion (electroconducting portion 12a) having conductivity (electrical conductivity) on at least one surface, and the current-carrying portion 12a is a surface characteristic and a current level from which the resist material can form the master 10A. Selected from the substrate. Examples thereof include metals such as nickel, aluminum, copper, chromium, gold, and platinum, and alloys such as stainless steel, and nickel, aluminum, copper, chromium, and gold are deposited on the surface by vapor deposition, sputtering, or electroless plating. Glass, enamel, and resin made of white gold. The above-described methods for forming the resist structure 11 can be suitably selected.

在此,作為能形成母模10A之程度的表面特性,包含:藉由與阻劑材料之相對的特性所決定之適宜的密接性、後述之母模除去步驟中的剝離性、及各種耐性。作為各種耐性,例如在形成阻劑構造體11時,在使用鹼性水溶液作為顯像液的情況,可選擇使用具有耐鹼性之鎳、不鏽鋼、鎳蒸鍍玻璃等。Here, the surface characteristics to such an extent that the master mold 10A can be formed include appropriate adhesion properties determined by the characteristics against the resist material, peelability in the master mold removal step to be described later, and various resistances. As various kinds of resistance, for example, when the resist structure 11 is formed, when an alkaline aqueous solution is used as the developing liquid, nickel, stainless steel, nickel vapor-deposited glass, or the like having alkali resistance can be selected.

另外,作為剝離性包含:藉由金屬構造形成步驟而析出之金屬構造體13,能與構成母模之一部分的基板12剝離之情況。亦即,作為在後述之金屬構造形成步驟中較佳的方法而例示出之電鍍處理,其目的通常是用於藉由金屬來被覆固體表面。因此,在電鍍處理中,具有進行前處理的情況,該前處理使得作為金屬之被覆對象之固體表面與析出金屬之間的密接性變得良好。Further, the peelability includes a case where the metal structure 13 deposited by the metal structure forming step can be peeled off from the substrate 12 constituting one of the master molds. That is, the plating treatment exemplified as a preferred method in the metal structure forming step described later is generally used for coating a solid surface with a metal. Therefore, in the plating treatment, there is a case where the pre-treatment is performed, and the pre-treatment makes the adhesion between the solid surface of the metal coating object and the precipitated metal good.

相對於此,本發明中,通電基板上析出之金屬,與通電基板12,係被剝離使用,所以,不需要進行用以改善密接性之前處理,或是將該處理限制在最小範圍。另外,通電基板可根據與析出金屬之關係,而從剝離性良好者中選出。On the other hand, in the present invention, since the metal deposited on the current-carrying substrate and the current-carrying substrate 12 are peeled off, it is not necessary to perform the process for improving the adhesion, or to limit the process to a minimum. Further, the current-carrying substrate can be selected from those having good peelability depending on the relationship with the deposited metal.

例如,在不鏽鋼之表面始終會有一層薄而透明且密接性強之被膜。而且,即使該被膜一旦被去除,但在曝露於空氣中之其他的氧化狀態下,仍會立即再生。此被膜之存在,一般會妨礙到「電鍍」之密接性。這是因為在通常之電鍍處理中,無論是否去除此被膜,均會立即進行電鍍處理,而至電鍍處理之前,需留意被膜不要再生。在本發明之通電基板12中,不需要顧慮到此種之密接性的提高。For example, there is always a thin, transparent and tightly adherent film on the surface of stainless steel. Moreover, even if the film is removed, it is immediately regenerated in other oxidized states exposed to the air. The presence of this film generally hinders the adhesion of "plating". This is because in the usual plating treatment, the plating treatment is performed immediately regardless of whether or not the film is removed, and it is necessary to pay attention to the film to be regenerated before the plating treatment. In the energized substrate 12 of the present invention, there is no need to be concerned with such an improvement in adhesion.

接著,阻劑構造體11之排列及大小,可依作為目的對象之樹脂成形品而適宜決定。第3及第4圖顯示在後述之驗證本發明之作用效果用的實施例中所採用的樣版構成。在此,第3圖為顯示阻劑構造體11之排列的俯視圖,第4圖為沿著第3圖中之iv-iv'線所作之剖視圖。Next, the arrangement and size of the resist structure 11 can be appropriately determined depending on the resin molded article to be the object of interest. The third and fourth figures show the configuration of the pattern used in the embodiment for verifying the effects of the present invention to be described later. Here, Fig. 3 is a plan view showing the arrangement of the resist structures 11, and Fig. 4 is a cross-sectional view taken along line iv-iv' in Fig. 3.

在該等圖中,符號a表示阻劑構造體之高度,符號b表示阻劑構造體之寬度,符號c表示阻劑構造體之長度,符號d表示阻劑構造體之間距。In the figures, the symbol a indicates the height of the resist structure, the symbol b indicates the width of the resist structure, the symbol c indicates the length of the resist structure, and the symbol d indicates the distance between the resist structures.

其中,本發明中,在阻劑構造體之高度a較高的情況,可獲得顯著之作用效果。亦即,在阻劑構造體之高度a較低的情況,如上述,因背面之凹凸而使模具容易變形,造成成形性惡化的問題點少。相對於此,阻劑構造體之高度a越高,則因背面之凹凸而使模具變形,造成成形性惡化的問題點,越為顯著,但根據本發明之成形模具的製造方法(其可製作實質上無背面之凹凸的成形模具),即使阻劑構造體之高度a變高,但因背面不產生凹凸,所以,仍不會產生模具之變形。Among them, in the present invention, when the height a of the resist structure is high, a remarkable effect can be obtained. In other words, when the height a of the resist structure is low, as described above, the mold is easily deformed by the unevenness on the back surface, and the problem of deterioration in formability is small. On the other hand, in the case where the height a of the resist structure is higher, the mold is deformed by the unevenness of the back surface, and the problem of deterioration in moldability is more remarkable. However, the method for producing a molding die according to the present invention (which can be produced) In the molding die having substantially no irregularities on the back surface, even if the height a of the resist structure is increased, since no irregularities are formed on the back surface, deformation of the mold does not occur.

產生此種變形之阻劑構造體之高度a,通常為10μm以上,顯著情況則為20μm以上。另一方面,本發明之阻劑構造體之高度a,雖無上限,但通常為1000μm程度以下。本發明中,其特徵是在成形模具之製造步驟中放入微影處理的步驟,微影術之特徵之一,即是微細加工。這是因為高度或間距越大,則本發明之特徵變得越不明顯。為了能明顯地產生微影術之特徵,以300μm以下為較佳,又以200μm以下為特佳。The height a of the resist structure which causes such deformation is usually 10 μm or more, and in most cases, 20 μm or more. On the other hand, although the height a of the resist structure of the present invention has no upper limit, it is usually about 1000 μm or less. In the present invention, it is characterized in that the step of lithography is carried out in the manufacturing step of the forming mold, and one of the characteristics of the lithography is microfabrication. This is because the greater the height or spacing, the less obvious the features of the invention become. In order to clearly produce the characteristics of lithography, it is preferably 300 μm or less, and particularly preferably 200 μm or less.

另外,藉由相同之理由,寬度b及間距d等雖無特別之限制,但通常情況下,寬度係從0.5μm~500μm之範圍中選出,另外,間距係從1μm~1000μm之範圍中選出。Further, for the same reason, the width b and the pitch d are not particularly limited, but in general, the width is selected from the range of 0.5 μm to 500 μm, and the pitch is selected from the range of 1 μm to 1000 μm.

接著,如第1B圖所示,在第2步驟(金屬構造形成步驟)中,在由第1步驟(母模形成步驟)所獲得之上部空間13',析出厚度是相當於微細之凸狀阻劑構造體11之高度的金屬,而形成金屬構造體13。Next, as shown in FIG. 1B, in the second step (metal structure forming step), in the upper space 13' obtained by the first step (mother mold forming step), the deposition thickness is equivalent to a fine convex resistance. The metal structure 13 is formed by the metal of the height of the agent structure 11.

此金屬之析出,只要是能形成與阻劑構造體11對應之金屬構造體,可為無電解電鍍,但以藉由電性電鍍法堆積金屬之所謂電鑄法為較佳。The precipitation of the metal is preferably a so-called electroforming method in which a metal structure corresponding to the resist structure 11 can be formed without electroless plating, but a metal is deposited by an electroplating method.

金屬構造體13係藉由通常之電性電鍍法(所謂電鑄法)對第1步驟所獲得之母模10A的表面側簡單地進行而形成。在第1步驟所獲得之母模10A的表面側露出凸狀之阻劑構造體11、及未被賦予凸狀之阻劑構造體11的通電部12a,但阻劑構造體11之露出部分(頂端面11a及側面11b),沒有通電性(導電性),所以,不會藉由電鑄析出金屬,僅在通電部12a析出金屬。藉此,若進行通常之電性電鍍,便可僅於上部空間13'選擇性地析出金屬。另外,藉由適宜選擇通電量,可形成厚度是相當於微細之凸狀阻劑構造體11之高度的金屬構造體13。根據通常之電性電鍍,可於通電部12a之上方堆積大致均勻之厚度的厚膜狀的金屬。藉此,堆積膜(或析出膜)之表面與通電部12a之平面實質上成為平行,可形成厚度是相當於微細之凸狀阻劑構造體11之高度的金屬構造體13。The metal structure 13 is formed by simply performing the surface side of the master 10A obtained in the first step by a usual electroplating method (so-called electroforming method). The convex resist structure 11 and the conductive portion 12a to which the convex resist structure 11 is not provided are exposed on the surface side of the master 10A obtained in the first step, but the exposed portion of the resist structure 11 ( Since the tip end surface 11a and the side surface 11b) have no electrification (conductivity), the metal is not deposited by electroforming, and only the metal is deposited in the current-carrying portion 12a. Thereby, if the usual electroplating is performed, the metal can be selectively deposited only in the upper space 13'. Further, by appropriately selecting the amount of energization, the metal structure 13 having a thickness corresponding to the height of the fine convex resist structure 11 can be formed. According to the usual electroplating, a thick film-like metal having a substantially uniform thickness can be deposited on the upper portion of the conducting portion 12a. Thereby, the surface of the deposited film (or the deposited film) is substantially parallel to the plane of the conductive portion 12a, and the metal structure 13 having a thickness corresponding to the height of the fine convex resist structure 11 can be formed.

金屬構造體13成為成形模具之圖案面,所以可從適合於模具表面之硬度及具有耐久性的素材中適宜選出。另外,應同時兼顧到與母模10A之剝離性,則誠如上述。又,有關電性電鍍浴穩定性、電鍍條件等,可根據通常之方法適宜選擇。Since the metal structure 13 serves as a pattern surface of the molding die, it can be suitably selected from materials suitable for the hardness of the surface of the mold and durability. In addition, the peeling property with the master mold 10A should be considered at the same time, as described above. Further, the stability of the electroplating bath, the plating conditions, and the like can be appropriately selected according to a usual method.

作為形成此種之金屬構造體13的材料,可列舉出例如:銅、鐵、鎳、鎳磷合金、鎳錳合金、鎳鈷合金、鎳鉬合金、鎳鎢合金、鈷鉬合金及鈷鎢合金等。Examples of the material for forming the metal structure 13 include copper, iron, nickel, nickel phosphorus alloy, nickel manganese alloy, nickel cobalt alloy, nickel molybdenum alloy, nickel tungsten alloy, cobalt molybdenum alloy, and cobalt tungsten alloy. Wait.

為了藉由無電解電鍍來形成金屬構造體13,可使用對於無電解電鍍液具有還原性之通電基板12。作為此種通電基板12,可列舉出例如:鐵、鎳、白金等之第VIII族金屬。此等之通電基板12,在阻劑構造體11之構造不會破壞或損壞之範圍內,亦可依需要實施活性化處理等。該等處理例如是活性能量光、電漿等之活性處理,藉此,可順利地進行無電解電鍍處理。In order to form the metal structure 13 by electroless plating, the electrically conductive substrate 12 having reducibility to the electroless plating solution can be used. Examples of such a current-carrying substrate 12 include a Group VIII metal such as iron, nickel, or platinum. These energized substrates 12 may be subjected to activation treatment or the like as needed within a range in which the structure of the resist structure 11 is not broken or damaged. These processes are, for example, active treatment of active energy light, plasma, etc., whereby the electroless plating treatment can be smoothly performed.

接著,如第1C圖所示,在第3步驟(通電膜形成步驟)中,在由第1步驟所獲得之阻劑構造體11的表面(頂端面11a)形成通電膜14。在由第2步驟所獲得之金屬構造體13的表面,同時能容易地形成通電膜14,故而較佳。藉此,可對頂端面11a與金屬構造體13之表面13a,賦予作為補強層15之電鍍層。Next, as shown in FIG. 1C, in the third step (the energization film forming step), the energization film 14 is formed on the surface (tip surface 11a) of the resist structure 11 obtained in the first step. It is preferable that the conductive film 14 can be easily formed on the surface of the metal structure 13 obtained in the second step at the same time. Thereby, a plating layer as the reinforcing layer 15 can be provided to the front end surface 11a and the surface 13a of the metal structure 13.

本發明之通電膜14,只要是能與阻劑材料密接且可通電之膜,並無特別之限制,可列舉出利用蒸鍍、濺鍍或無電解電鍍等而形成例如:鎳、鋁、銅、鉻、金、白金等的膜。可依目的適宜選擇,但以與金屬構造體13相同之組成為較佳。The conductive film 14 of the present invention is not particularly limited as long as it can be in close contact with the resist material and can be energized, and examples thereof include nickel, aluminum, and copper by vapor deposition, sputtering, electroless plating, or the like. , film of chromium, gold, platinum, etc. It can be suitably selected according to the purpose, but it is preferably the same composition as the metal structure 13.

另外,在賦予該等之通電膜14的步驟中,通常之情況下,可賦予不僅能與金屬構造體13密接,且整體平滑之通電膜14。In addition, in the step of providing the conductive film 14 in the above, in general, the conductive film 14 which is not only in close contact with the metal structure 13 but also smooth as a whole can be provided.

在此,通電膜14之膜厚,雖無特別之限定,若過薄則容易產生通電異常或膜剝離,若過厚,則在製作時需要較長時間。另外,在通電膜形成步驟中,當進行蒸鍍或濺鍍處理時,阻劑表面之溫度將會上昇。這是因為當藉由該等處理形成厚膜時,蓄積於阻劑表面之蓄熱量增多,阻劑與通電膜之密接性提高,而有阻劑材料之剝離變得困難的情況。從以上觀點考慮,通常之情況下,以通電膜14之膜厚為25nm~500nm的範圍內為較佳。Here, the film thickness of the current-carrying film 14 is not particularly limited, and if it is too thin, it is likely to cause an abnormality in electricity or film peeling, and if it is too thick, it takes a long time to produce. Further, in the energization film forming step, when the vapor deposition or sputtering treatment is performed, the temperature of the resist surface will rise. This is because when a thick film is formed by such treatment, the amount of heat accumulated in the surface of the resist increases, and the adhesion between the resist and the conductive film is improved, and the peeling of the resist material becomes difficult. From the above viewpoints, in the normal case, it is preferable that the film thickness of the dielectric film 14 is in the range of 25 nm to 500 nm.

接著,如第1D圖所示,在第4步驟(補強層形成步驟)中,藉由電鍍處理在通電膜14上形成補強層15。藉此,可獲得背面15a平坦之電鍍層(補強層15)。在此,本發明之背面15a係指與成形模具10之成形面10a相反側的面,並稱電鍍層15之空氣界面為背面15a。Next, as shown in FIG. 1D, in the fourth step (reinforcing layer forming step), the reinforcing layer 15 is formed on the dielectric film 14 by a plating process. Thereby, a plating layer (reinforcing layer 15) having a flat back surface 15a can be obtained. Here, the back surface 15a of the present invention refers to the surface on the opposite side to the molding surface 10a of the molding die 10, and the air interface of the plating layer 15 is referred to as the back surface 15a.

此電鍍層15可與賦予金屬構造體13之方法實質上相同。亦即,考慮到成形模具10之耐久性及補強性,以硬度比金屬構造體13還大為較佳,且與金屬構造體13之賦予相同,可依目的適宜選擇。This plating layer 15 can be substantially the same as the method of imparting the metal structure 13. That is, in consideration of the durability and the reinforcing property of the molding die 10, the hardness is more preferable than the metal structure 13, and the same as the metal structure 13, the shape can be appropriately selected depending on the purpose.

接著,如第1E圖所示,在第5步驟(母模除去步驟)中,藉由適宜之方法除去母模10A,露出具有基於金屬構造體13之微細凹凸圖案的成形面10a,獲得由通電膜14、補強層15及金屬構造體13所構成之背面15a平坦的成形模具10。Next, as shown in FIG. 1E, in the fifth step (master mold removing step), the mother mold 10A is removed by an appropriate method, and the molding surface 10a having the fine uneven pattern based on the metal structure 13 is exposed to obtain electricity. The molding die 10 in which the back surface 15a of the film 14, the reinforcing layer 15, and the metal structure 13 is flat is flat.

在露出於成形面10a之通電膜14,不適合作為成形模具10的表面材料之情況,可除去通電膜14之表面露出部分。在除去通電膜14之情況,當然以預先考慮到通電膜之厚度,來決定阻劑構造體11之高度a為較佳。When the conductive film 14 exposed on the molding surface 10a is not suitable as the surface material of the molding die 10, the exposed portion of the surface of the dielectric film 14 can be removed. In the case where the dielectric film 14 is removed, it is of course preferable to determine the height a of the resist structure 11 in consideration of the thickness of the current-carrying film.

(變化例)(variation)

以下,參照圖面說明本發明之較佳實施形態的一變化例,而對與實施形態相同或均等之部位構件,則賦予相同之元件符號並省略詳細說明。In the following, a modification of the preferred embodiment of the present invention will be described with reference to the drawings, and the same or equivalent components will be denoted by the same reference numerals, and the detailed description will be omitted.

在顯示實施形態之第1A圖中,凸狀之阻劑構造體11係形成於通電基板12的中央部,但此阻劑構造體11在通電基板12上的位置,並不受到限定。In the first embodiment of the display embodiment, the convex resist structure 11 is formed in the central portion of the conductive substrate 12. However, the position of the resist structure 11 on the conductive substrate 12 is not limited.

例如,在本變化例之母模20A中,如第9A圖所示,除了位於通電基板12之中央部的阻劑構造體11以外,並沿側壁12b形成阻劑構造體11'。在此種母模20A中,阻劑構造體11'之頂端面11a'的面積,比位於中央部的阻劑構造體11之頂端面11a的面積還寬。For example, in the master 20A of the present modification, as shown in FIG. 9A, the resist structure 11' is formed along the side wall 12b except for the resist structure 11 located at the central portion of the conductive substrate 12. In the master mold 20A, the area of the distal end surface 11a' of the resist structure 11' is wider than the area of the distal end surface 11a of the resist structure 11 located at the center.

以下,藉由與實施形態相同之步驟,可獲得第9E圖所示之模具20。在此模具20中,反映母模20A之表面構造,在成形面10a之外周圍,欠缺金屬構造體13而未被形成。Hereinafter, the mold 20 shown in Fig. 9E can be obtained by the same procedure as in the embodiment. In the mold 20, the surface structure of the mother die 20A is reflected, and the metal structure 13 is not formed around the molding surface 10a and is not formed.

藉由以上步驟獲得之本發明的成形模具10,20之背面15a,亦即具有與阻劑構造體11對應之微細凹凸構造體的成形面10a之相反側的面之表面粗度,相當於電鍍層15之表面粗度,例如,在以電鑄進行之情況,具有1μm以下之凹凸。此凹凸不是起因於阻劑構造體11之微細凹凸構造體,而是因電鑄方法所引起,此程度之凹凸,雖不致於產生成形不良,但權宜之計,亦可利用砂紙等進行不會有熱延伸程度的輕微研磨,但此並不意味排除本發明之實施。The surface roughness of the back surface 15a of the molding dies 10, 20 of the present invention obtained by the above steps, that is, the surface opposite to the molding surface 10a of the fine concavo-convex structure corresponding to the resist structure 11 is equivalent to electroplating. The surface roughness of the layer 15 has, for example, irregularities of 1 μm or less in the case of electroforming. This unevenness is not caused by the fine concavo-convex structure of the resist structure 11, but is caused by the electroforming method, and the unevenness of this degree does not cause molding failure, but it is not possible to use sandpaper or the like. There is a slight grinding of the degree of thermal elongation, but this is not meant to exclude the practice of the invention.

如此獲得之模具,可用作為精密之微細加工技術用的模具。作為此種精密微細加工技術,可列舉例如:奈米壓印成形(以下,亦有簡稱為壓印的情況)。在此,壓印係指將形成於模具之成形面上的非常微細之凹凸壓抵於塗布於基板之樹脂上,將成形面之形狀轉印於樹脂上的方法。一般而言,在對基板上之聚甲基丙烯酸甲酯等之熱可塑性樹脂的高分子膜在減壓之氣體環境下,將成形模具(模具)抵壓於基板上,將該基板加熱至熱可塑性樹脂的玻璃轉移溫度以上。在經過一定時間後,將成形模具(模具)及基板冷卻至室溫,並從基板上剝離成形模具。藉此,經過了所謂於高分子膜上形成有精密之凹凸圖案的步驟的技術。The mold thus obtained can be used as a mold for precision microfabrication technology. As such a precision microfabrication technique, for example, nanoimprint molding (hereinafter, simply referred to as imprint) may be mentioned. Here, the imprinting means a method of pressing a very fine unevenness formed on a molding surface of a mold against a resin applied to a substrate, and transferring the shape of the molding surface to the resin. In general, a polymer film of a thermoplastic resin such as polymethyl methacrylate on a substrate is pressed against a substrate by a molding die (mold) under a reduced pressure atmosphere, and the substrate is heated to heat. The plastic resin has a glass transition temperature or higher. After a certain period of time, the forming mold (mold) and the substrate were cooled to room temperature, and the forming mold was peeled off from the substrate. Thereby, a technique of a step of forming a fine uneven pattern on a polymer film is passed.

亦可依需要在此模具之表面進行用以提高脫模性的處理。A treatment for improving mold release property may be performed on the surface of the mold as needed.

另外,依以上方法獲得之成形模具,藉由樹脂成形加工,被期待應用於各種之樹脂成形品,該等樹脂成形品係以液晶等之顯示器構件、DVD等之記錄媒體、行動電話器材、DNA晶片等的生物晶片等之微米級、次微米級為中心之需要微細凹凸構造的成形品。In addition, the molding die obtained by the above method is expected to be applied to various resin molded articles by resin molding, such as display members such as liquid crystals, recording media such as DVDs, mobile phone devices, and DNA. A molded article requiring a fine uneven structure centering on a micron-order or sub-micron-order such as a biochip such as a wafer.

(實施例)(Example)

其次,以具體實施例來說明本發明之實施態樣。以下根據實施例來具體說明本發明,但本發明並不限定於此等實施例。Next, an embodiment of the present invention will be described by way of specific examples. Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to the examples.

又,以下所示之實施例,只要無任何限制,均基於第1A圖~第1E圖及第3、4圖所進行,另外,比較例係基於第2A圖~第2E圖及第3、4圖所進行。Further, the examples shown below are based on Figs. 1A to 1E and Figs. 3 and 4 without any limitation, and the comparative examples are based on Figs. 2A to 2E and Figs. 3 and 4. The figure is carried out.

在此,實施例及比較例之阻劑構造體的高度a、寬度b、長度c及間距d,分別為a=20μm、b=20μm、c=80μm、d=100μm。另外,在實施例及比較例之成形模具上,在直徑為16mm之圓圈的範圍內形成有與第3圖及第4圖對應之微細凹凸構造體。Here, the height a, the width b, the length c, and the pitch d of the resist structures of the examples and the comparative examples were a = 20 μm, b = 20 μm, c = 80 μm, and d = 100 μm, respectively. Further, in the molding dies of the examples and the comparative examples, fine concavo-convex structures corresponding to the third and fourth figures were formed in a circle having a diameter of 16 mm.

採用以上之實施例及比較例之成形模具,在樹脂上形成模具之微細凹凸構造體時,使用Jenoptik製奈米壓印成形裝置來進行成形。使用厚度為10mm之SUS304的不鏽鋼作為基板(以下,稱為SUS基板),以雙面膠帶將成形模具貼附於SUS基板上,並將貼附有成形模具之SUS基板安裝於成形裝置上,對丙烯酸(聚甲基丙烯酸甲酯)進行加熱‧加壓,獲得樹脂製微細凹凸構造體。加熱係在125℃,加壓係以5MPa進行,最大加壓力之保持時間為120秒。作為成形性之指標,評價了100次成形的成形性。When the fine concavo-convex structure of the mold was formed on the resin by the molding dies of the above examples and comparative examples, the molding was carried out using a nanoimprint molding apparatus manufactured by Jenoptik. A stainless steel of SUS304 having a thickness of 10 mm was used as a substrate (hereinafter referred to as a SUS substrate), and a molding die was attached to the SUS substrate with a double-sided tape, and the SUS substrate to which the molding die was attached was attached to the molding apparatus. Acrylic acid (polymethyl methacrylate) was heated and pressurized to obtain a resin fine concavo-convex structure. The heating was carried out at 125 ° C, the pressurization was carried out at 5 MPa, and the maximum holding pressure was maintained for 120 seconds. The moldability of 100 moldings was evaluated as an index of moldability.

實施例及比較例之成形模具的平面性,係由三鷹光器製NH-3SP所測定。The planarity of the molding dies of the examples and the comparative examples was measured by NH-3SP manufactured by Three Eagles.

[實施例1][Example 1]

在厚度1mm之平面SUS基板上,藉由採用近紫外線之光微影術製作第3圖及第4圖所示大小的阻劑構造體11,並利用Ni電鑄僅在SUS基板上堆積20μm的Ni。然後,進行Ni之真空蒸鍍,朝在第2步驟形成之基板上形成通電膜,再進行Ni電鑄,堆積500μm的Ni。On the planar SUS substrate having a thickness of 1 mm, the resist structure 11 of the size shown in Figs. 3 and 4 was produced by photolithography using near-ultraviolet light, and 20 μm was deposited on the SUS substrate by Ni electroforming. Ni. Then, vacuum deposition of Ni was performed, and an electric current film was formed on the substrate formed in the second step, and Ni electroforming was further performed to deposit 500 μm of Ni.

在除去阻劑後,獲得成形模具10。對成形模具表面進行氧電漿處理,藉以進行成形。After the resist is removed, the forming mold 10 is obtained. The surface of the forming mold is subjected to oxygen plasma treatment for forming.

[比較例1][Comparative Example 1]

採用第2A圖~第2D圖所示之製造方法,製造在背面出現有微細構造體之凹凸的成形模具。在厚度1mm之平面玻璃基板上,藉由採用近紫外線之光微影術製作第3圖及第4圖所示大小的阻劑構造體31。然後,藉由Ni之真空蒸鍍形成通電膜,再進行Ni電鑄,堆積500μm的Ni。在除去阻劑後,獲得成形模具40。對成形模具表面進行氧電漿處理,藉以進行成形。A molding die having irregularities of a fine structure on the back surface is produced by the manufacturing method shown in Figs. 2A to 2D. On the flat glass substrate having a thickness of 1 mm, the resist structure 31 having the size shown in Figs. 3 and 4 was produced by photolithography using near-ultraviolet light. Then, an energization film was formed by vacuum deposition of Ni, and Ni electroforming was performed to deposit 500 μm of Ni. After the resist is removed, the forming mold 40 is obtained. The surface of the forming mold is subjected to oxygen plasma treatment for forming.

[比較例2][Comparative Example 2]

採用第2A圖~第2E圖所示之製造方法,製造背面被研磨成平滑面的成形模具。在厚度1mm之平面玻璃基板上,藉由採用近紫外線之光微影術製作第3圖及第4圖所示大小的阻劑構造體31。然後,藉由Ni之真空蒸鍍形成通電膜,再進行Ni電鑄,堆積500μm的Ni。在除去阻劑後,以保護膜被覆成形模具表面,以#80及#400之砂紙來研磨背面的凹凸,獲得平坦之成形模具50。然後將保護膜剝離,並以溶劑洗淨後,進行氧電漿處理,藉以進行成形。A molding die having a back surface polished to a smooth surface was produced by the manufacturing method shown in Figs. 2A to 2E. On the flat glass substrate having a thickness of 1 mm, the resist structure 31 having the size shown in Figs. 3 and 4 was produced by photolithography using near-ultraviolet light. Then, an energization film was formed by vacuum deposition of Ni, and Ni electroforming was performed to deposit 500 μm of Ni. After the resist was removed, the surface of the mold was coated with a protective film, and the unevenness of the back surface was polished with #80 and #400 sandpaper to obtain a flat molding die 50. Then, the protective film was peeled off, washed with a solvent, and then subjected to an oxygen plasma treatment to form.

在藉由實施例1及比較例2所製造之成形模具中,雖然看不到有對應於模具背面之凹凸的轉印痕跡,但在藉由比較例2所製造之成形模具中,有觀察到對應於背面之凹凸的轉印痕跡。In the molding die produced in Example 1 and Comparative Example 2, although the transfer marks corresponding to the unevenness on the back surface of the mold were not observed, in the molding die manufactured by Comparative Example 2, it was observed. A transfer mark corresponding to the unevenness of the back surface.

第5圖顯示由實施例1之方法所製造之成形模具的形成有微細凹凸構造體之區域的平面性。其中最低部與最高部之高低差(以下,ΔH)為ΔH=4μm,其平面性良好,採用此模具進行壓印成形。丙烯酸樹脂之充填性為面內均勻,可達成100次成形之穩定成形。Fig. 5 is a view showing the planarity of a region in which the fine concavo-convex structure is formed in the molding die produced by the method of the first embodiment. The difference between the lowest part and the highest part (hereinafter, ΔH) is ΔH = 4 μm, and the flatness is good, and the mold is used for embossing. The filling property of the acrylic resin is uniform in the plane, and stable molding of 100 times of molding can be achieved.

第6圖顯示由比較例1之方法所製造之成形模具的形成有微細凹凸構造體之區域的平面性。其中ΔH=7μm,採用此模具進行壓印成形。雖可獲得對微細凹凸構造體之形成區域的最外周部的充填性,但隨著朝向區域中心,其充填變得不足,造成微細凹凸構造體之轉印率在中心部降低。第7圖顯示5次成形後之成形模具的平面性。在5次成形後,成為ΔH=23μm,因5次成形而使得成形模具大幅度地變形,不得不中止對以後之成形。Fig. 6 is a view showing the planarity of a region in which a fine concavo-convex structure is formed in a molding die produced by the method of Comparative Example 1. Where ΔH = 7 μm, the mold was used for embossing. Although the filling property to the outermost peripheral portion of the formation region of the fine concavo-convex structure is obtained, the filling becomes insufficient as the center of the region is formed, and the transfer rate of the fine concavo-convex structure is lowered at the center portion. Fig. 7 shows the planarity of the forming mold after the fifth forming. After the fifth molding, ΔH = 23 μm, and the molding die was largely deformed by the fifth molding, and the molding was not stopped.

另外,第8圖顯示由比較例2之方法所製造之成形模具的形成有微細凹凸構造體之區域的平面性。其中ΔH=47μm,其平面性差,採用此模具進行壓印成形。雖微細凹凸構造體之形成區域的最外周部,形成有構造體上面之一部分,但整個上面卻不形成,而造成充填不足,使得朝向微細凹凸構造體之形成區域的中心,轉印率更為降低,中心部之高度約為12μm。In addition, Fig. 8 shows the planarity of the region in which the fine concavo-convex structure is formed in the molding die produced by the method of Comparative Example 2. Among them, ΔH = 47 μm, which is poor in planarity, and is formed by imprinting using this mold. Although the outermost peripheral portion of the formation region of the fine concavo-convex structure is formed with one portion of the upper surface of the structure, the entire upper surface is not formed, and the filling is insufficient, so that the transfer rate is further toward the center of the formation region of the fine concavo-convex structure. Lower, the height of the center is about 12μm.

經將加壓力變更為7.5MPa之結果,雖微細凹凸構造體之形成區域的中心部之轉印率有所提高,而形成有上面之一部分,但在最外周部附近,脫模時會造成丙烯酸樹脂變形,而無法進行均勻之成形。As a result of changing the pressing force to 7.5 MPa, the transfer rate of the central portion of the formation region of the fine concavo-convex structure is improved, and one of the upper portions is formed, but in the vicinity of the outermost peripheral portion, acrylic acid is caused during demolding. The resin is deformed and it is impossible to form a uniform shape.

又,本發明並不受上述所示實施形態所限定。在本發明之範圍中,均可將上述實施形態之各要素變更、追加、轉換為熟悉本行業者所能容易思及的內容。Further, the present invention is not limited to the above-described embodiments. Within the scope of the present invention, the elements of the above-described embodiments can be changed, added, and converted into contents that can be easily considered by those skilled in the art.

本申請案係根據日本國之特願2008-204372號所揭示的發明,主張優先權。The present application claims priority based on the invention disclosed in Japanese Patent Application No. 2008-204372.

10...模具10. . . Mold

10A...母模10A. . . Master model

11...阻劑構造體11. . . Resistor structure

11'...阻劑構造體11'. . . Resistor structure

11a...頂端面11a. . . Top surface

11a'...頂端面11a'. . . Top surface

11b...側面11b. . . side

12...通電基板12. . . Powered substrate

12a...通電部12a. . . Power supply department

12b...側壁12b. . . Side wall

13...金屬構造體13. . . Metal structure

13'...上部空間13'. . . Upper space

13a...表面13a. . . surface

14...通電膜14. . . Power film

15...補強層15. . . Reinforcing layer

15a...背面15a. . . back

20...模具20. . . Mold

20A...母模20A. . . Master model

31...阻劑構造體31. . . Resistor structure

32...基板32. . . Substrate

33...通電膜33. . . Power film

34...電鍍層34. . . Plating

34a...背面34a. . . back

34b...凹凸構造34b. . . Concave structure

40...模具40. . . Mold

50...模具50. . . Mold

a...阻劑構造體之高度a. . . Height of the resist structure

b...阻劑構造體之寬度b. . . Width of the resist structure

c...阻劑構造體之長度c. . . Resistor structure length

d...阻劑構造體之間距d. . . Distance between resist structures

第1A圖為模式性說明實施形態及實施例1之成形模具的製造方法之剖視圖。Fig. 1A is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to an embodiment and a first embodiment.

第1B圖為模式性說明實施形態及實施例1之成形模具的製造方法之剖視圖。Fig. 1B is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to an embodiment and a first embodiment.

第1C圖為模式性說明實施形態及實施例1之成形模具的製造方法之剖視圖。Fig. 1C is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to an embodiment and a first embodiment.

第1D圖為模式性說明實施形態及實施例1之成形模具的製造方法之剖視圖。Fig. 1D is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to an embodiment and a first embodiment.

第1E圖為模式性說明實施形態及實施例1之成形模具的製造方法之剖視圖。Fig. 1E is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to an embodiment and a first embodiment.

第2A圖為模式性說明習知例或比較例之成形模具的製造方法之剖視圖。Fig. 2A is a cross-sectional view schematically illustrating a method of manufacturing a molding die of a conventional example or a comparative example.

第2B圖為模式性說明習知例或比較例之成形模具的製造方法之剖視圖。Fig. 2B is a cross-sectional view schematically illustrating a method of manufacturing a molding die of a conventional example or a comparative example.

第2C圖為模式性說明習知例或比較例之成形模具的製造方法之剖視圖。2C is a cross-sectional view schematically illustrating a method of manufacturing a molding die of a conventional example or a comparative example.

第2D圖為模式性說明習知例或比較例之成形模具的製造方法之剖視圖。Fig. 2D is a cross-sectional view schematically illustrating a method of manufacturing a molding die of a conventional example or a comparative example.

第2E圖為模式性說明習知例或比較例之成形模具的製造方法之剖視圖。Fig. 2E is a cross-sectional view schematically illustrating a method of manufacturing a molding die of a conventional example or a comparative example.

第3圖為顯示實施例及比較例之阻劑構造體的構成之俯視圖。Fig. 3 is a plan view showing the configuration of a resist structure of the examples and the comparative examples.

第4圖為顯示實施例及比較例之阻劑構造體的構成之剖視圖。Fig. 4 is a cross-sectional view showing the configuration of a resist structure of Examples and Comparative Examples.

第5圖為顯示實施例1之成形模具的微細凹凸構造體之區域的平面性之立體圖。Fig. 5 is a perspective view showing the planarity of a region of the fine concavo-convex structure of the molding die of the first embodiment.

第6圖為顯示比較例1之成形模具的微細凹凸構造體之區域的平面性之立體圖。Fig. 6 is a perspective view showing the planarity of a region of the fine concavo-convex structure of the molding die of Comparative Example 1.

第7圖為顯示比較例1之成形模具的微細凹凸構造體之區域的平面性之立體圖。Fig. 7 is a perspective view showing the planarity of a region of the fine concavo-convex structure of the molding die of Comparative Example 1.

第8圖為顯示比較例2之成形模具的微細凹凸構造體之區域的平面性之立體圖。Fig. 8 is a perspective view showing the planarity of a region of the fine concavo-convex structure of the molding die of Comparative Example 2.

第9A圖為模式性說明變化例之成形模具的製造方法之剖視圖。Fig. 9A is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to a modification.

第9B圖為模式性說明變化例之成形模具的製造方法之剖視圖。Fig. 9B is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to a modification.

第9C圖為模式性說明變化例之成形模具的製造方法之剖視圖。Fig. 9C is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to a modification.

第9D圖為模式性說明變化例之成形模具的製造方法之剖視圖。Fig. 9D is a cross-sectional view schematically showing a method of manufacturing a molding die according to a modification.

第9E圖為模式性說明變化例之成形模具的製造方法之剖視圖。Fig. 9E is a cross-sectional view schematically illustrating a method of manufacturing a molding die according to a modification.

10A...母模10A. . . Master model

11...阻劑構造體11. . . Resistor structure

11a...頂端面11a. . . Top surface

11b...側面11b. . . side

12...通電基板12. . . Powered substrate

12a...通電部12a. . . Power supply department

13...金屬構造體13. . . Metal structure

13'...上部空間13'. . . Upper space

13a...表面13a. . . surface

14...通電膜14. . . Power film

15...補強層15. . . Reinforcing layer

15a...背面15a. . . back

Claims (4)

一種成形模具之製造方法,該成形模具在成形面具有微細凹凸構造,而該製造方法包含有以下步驟:母模形成步驟(第1步驟),使用在基板之至少一表面上具有通電部之通電基板,並對該通電部賦予基於阻劑之微細的凸狀阻劑構造體而形成母模;金屬構造形成步驟(第2步驟),在該通電部析出厚度相當於該阻劑構造體之高度的金屬,藉以形成金屬構造體;通電膜形成步驟(第3步驟),在該阻劑構造體之表面形成通電膜;補強層形成步驟(第4步驟),藉由電鍍處理,在該通電膜上形成補強層;及母模除去步驟(第5步驟),除去該母模,形成表面具有基於該金屬構造體之微細凹凸圖形的模具。 A manufacturing method of a molding die having a fine concavo-convex structure on a molding surface, and the manufacturing method includes the following steps: a master molding step (first step), using a current having a current-carrying portion on at least one surface of the substrate a substrate, a mother resist is formed by providing a fine convex resist structure based on a resist, and a metal structure forming step (second step), wherein a thickness of the conductive portion is equal to a height of the resist structure a metal structure for forming a metal structure; an energization film forming step (third step), forming an energization film on the surface of the resist structure; and a reinforcing layer forming step (fourth step) by electroplating treatment The reinforcing layer is formed thereon; and the master mold removing step (the fifth step) removes the master mold to form a mold having a fine uneven pattern on the surface based on the metal structure. 如申請專利範圍第1項之成形模具之製造方法,其中該阻劑構造體之高度為10μm以上。 The method for producing a molding die according to the first aspect of the invention, wherein the height of the resist structure is 10 μm or more. 如申請專利範圍第1項之成形模具之製造方法,其中該補強層形成步驟之電鍍處理係電鑄。 The method of manufacturing a molding die according to claim 1, wherein the plating treatment of the reinforcing layer forming step is electroforming. 如申請專利範圍第1項之成形模具之製造方法,其中該通電膜形成步驟,係藉由從蒸鍍、濺鍍、無電解電鍍中選出之方法來形成通電膜。The method for producing a molding die according to the first aspect of the invention, wherein the energized film forming step is formed by a method selected from the group consisting of vapor deposition, sputtering, and electroless plating.
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