WO2019223109A1 - Flexible nanoimprint template and manufacturing method therefor - Google Patents
Flexible nanoimprint template and manufacturing method therefor Download PDFInfo
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- WO2019223109A1 WO2019223109A1 PCT/CN2018/098080 CN2018098080W WO2019223109A1 WO 2019223109 A1 WO2019223109 A1 WO 2019223109A1 CN 2018098080 W CN2018098080 W CN 2018098080W WO 2019223109 A1 WO2019223109 A1 WO 2019223109A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- the disclosure belongs to the technical field of nano-imprint templates, for example, relates to a flexible nano-imprint template and a preparation method thereof.
- Nano-imprint technology is a new method of nano-pattern replication first proposed by Stephen Y. Chou of Princeton University in the 1990s. This technology applies the traditional template replication principle to the field of micro-manufacturing. It overcomes the limitations and requirements of traditional optical lithography on special exposure beam sources, high-precision focusing systems, and extremely short-wavelength lens systems. It has ultra-high resolution and high yield. And low cost. Nano-imprint technology is mainly used in the manufacturing process of integrated nano-structure devices, such as integrated circuits, high-density magnetic memory electrophoresis chips, waveguide polarizers, quantum devices, and polarized light navigation sensors.
- nano-imprint lithography The most critical technology of nano-imprint lithography is the preparation of nano-imprint templates, which is also different from lithography.
- the quality of the nano-imprint template directly determines the quality of the embossed graphics. Therefore, to produce high-precision graphics, a high-quality nano-imprint template is required first.
- the most widely used template for nanoimprinting is silicon templates.
- the silicon template manufacturing process is to first prepare the nano-pattern through homogenization, photolithography, and then dry or wet etching.
- the surface of the silicon template is smooth, but its material is brittle, which makes it difficult to guarantee the life of the silicon template.
- scientists such as Hirai found that silicon templates rarely withstand 20 repeated imprints.
- silicon templates are not suitable for industrial production, which has also become a key factor limiting the development of nanoimprint technology.
- roll-to-roll nanoimprinting is the preferred method to enable large-scale, high-throughput production in industry. This makes the preparation of high-quality flexible nanoimprint templates particularly critical.
- the most widely used flexible nanoimprint template is a nickel template.
- a typical manufacturing method of a nickel template is to sputter a conductive seed layer on a mother template (silicon template or polymer template), then thicken it by electroplating, and finally release the nickel template from the mother template to obtain a nickel template.
- Nickel template has high strength and hardness, high melting point and good thermal conductivity.
- nickel templates usually have a roughness of a few nanometers, which makes it difficult to release the nickel template, especially for UV-cured nano-imprinting.
- the surface of the nickel template needs to be subjected to hydrophobic treatment. Printing progresses poorly.
- the roll-to-roll embossing machine performs UV curing embossing
- the nickel template is in contact with the nano-imprinting glue for a long time.
- the photoacid contained in the glue will slowly corrode the nickel template, which will affect the graphic accuracy of the nickel template and the imprinting effect.
- the minimum size of the micro-nano pattern produced on the template is difficult to be less than 20 nanometers.
- CN104308452A discloses a method for preparing an amorphous alloy micro-nano structure embossing mold, which includes the following steps: Step 1: Preparation of an amorphous alloy sheet; Step 2: Surface treatment of the amorphous alloy sheet: Non-obtained in step 1 One side (or cut surface) of the crystalline alloy wafer is ground and polished to obtain an amorphous alloy wafer with a smooth surface on one side; Step 3: Preparation of a template: using lithography or laser interference etching to prepare a template, and polishing the surface of the silicon wafer The designed pattern is etched and used as the micro-nano structure of the micro-nano embossing mold on the metal surface to be used as a template for the thermoplastic molding or embossing of the amorphous alloy sheet; Embossed template; step 4: thermoplastic compression molding: the polished surface of the amorphous alloy sheet polished on one side in step 2 is opposite to the side of the mold with a
- step 6 demolding: The amorphous alloy sheet and the template obtained in step 5 are placed in a KOH or NaOH solution, so that the template is corroded, so that the amorphous alloy sheet and the template are separated, and an amorphous alloy micro-nano structure embossing mold is obtained.
- the invention proposes to use a high-performance amorphous alloy material with high strength, high hardness, and good corrosion resistance as a mold material for micro-nano structure molding. Using its precise molding characteristics, a thermoplastic compression molding technology is proposed to prepare micro-nano structures and sizes.
- Uniform forming mold and using the mold for embossing molding of various metals, embossing molding of polymer materials and rapid embossing molding, to prepare metal materials and polymer materials with micro-nano structure.
- using an amorphous alloy sheet as a template cannot be made into a flexible template, and its mechanical properties need to be further improved; in addition, using an amorphous alloy sheet alone as a template is costly: its demolding method chooses to corrode the silicon template, which means that The master template can only be used once, and the cost of preparing a silicon template (especially a large-scale nano-scale silicon template) is very high; therefore, templates made of amorphous alloy wafers are embossed at roll-to-roll nanometers, especially at high sizes. Applications in the field of precision nanoimprinting are limited.
- the present disclosure provides a flexible nano-imprint template and a method for preparing the same.
- the flexible nano-imprint template has an arithmetic average roughness (Ra) of less than 1 nm, is convenient for demolding, has good flexibility, has good mechanical properties, and is resistant to photoacid corrosion. It can be used for nano-imprinting of small size and high-precision graphics.
- the present disclosure provides a flexible nano-imprint template, which is composed of an amorphous alloy layer and a nickel base layer.
- the present disclosure applies an amorphous alloy to a nano-imprint template.
- the amorphous alloy has a series of excellent properties, such as: lower roughness, high corrosion and abrasion resistance, higher strength and hardness, etc .; the nickel template has Higher strength and hardness, high melting point and good thermal conductivity.
- an amorphous alloy is simply used as a template, there are several disadvantages: 1. High cost; 2. It is difficult to make a flexible template; 3. It is difficult to make a limit nano-size template in a large area. Therefore, the nano-imprint template made of the composite of amorphous alloy and nickel in this disclosure is flexible and can be applied to roll-to-roll nano-imprint of high-throughput production. While ensuring the excellent performance of amorphous alloys, Adequate mechanical properties.
- the amorphous alloy layer is prepared by a magnetron sputtering process.
- the nickel base layer is prepared by a plating process.
- the thickness of the amorphous alloy layer is 1 to 2 ⁇ m, for example, the thickness of the amorphous alloy layer is 1 ⁇ m, 1.1 ⁇ m, 1.2 ⁇ m, 1.3 ⁇ m, 1.4 ⁇ m, 1.5 ⁇ m, 1.6 ⁇ m, 1.7 ⁇ m, 1.8 ⁇ m, 1.9 ⁇ m, or 2 ⁇ m.
- the thickness of the nickel base layer is 100-200 ⁇ m, for example, the thickness of the nickel base layer is 100 ⁇ m, 110 ⁇ m, 120 ⁇ m, 130 ⁇ m, 140 ⁇ m, 150 ⁇ m, 160 ⁇ m, 170 ⁇ m, 180 ⁇ m, 190 ⁇ m, or 200 ⁇ m.
- the amorphous alloy layer is selected from a zirconium-based amorphous alloy, a copper-based amorphous alloy, a magnesium-based amorphous alloy, a titanium-based amorphous alloy, a palladium-based amorphous alloy, and an iron-based amorphous alloy. One of them.
- the present disclosure provides a method for preparing a flexible nano-imprint template, including the following steps:
- step 2 magnetron sputtering a nickel seed layer on the surface of the amorphous alloy layer obtained in step 1);
- step 2) electroplating a nickel thickened layer on the surface of the nickel seed layer obtained in step 2) to obtain a composite template having an amorphous alloy layer and a nickel base layer;
- the mother template is selected from one of a silicon template, a polymer sheet template, an ITO (indium tin oxide) conductive glass template, an alumina template, and a quartz template.
- the magnetron sputtering process for preparing the amorphous alloy layer is: magnetron sputtering using a multi-component alloy target, and firstly using low power sputtering of 40 to 60W to ensure Better coverage of graphics accuracy. For example, first use 40W, 45W, 50W, 55W, or 60W low-power sputtering, and then use a large current of 110 to 120W to thicken the sputtering, such as 110W, 111W, 112W, 113W, 114W. , 115W, 116W, 117W, 118W, 119W or 120W for thickening.
- the pressure of the sputtered Ar (argon) gas in step 1) is 0.5 to 1.0 Pa.
- the sputtered atmosphere is Ar gas
- the pressure of the Ar gas is 0.5 Pa, 0.6 Pa, 0.7Pa, 0.8Pa, 0.9Pa or 1Pa.
- the thickness of the amorphous alloy layer is 1 to 2 ⁇ m, for example, the thickness of the amorphous alloy layer is 1 ⁇ m, 1.1 ⁇ m, 1.2 ⁇ m, 1.3 ⁇ m, 1.4 ⁇ m, 1.5 ⁇ m, 1.6 ⁇ m, 1.7 ⁇ m, 1.8 ⁇ m, 1.9 ⁇ m, or 2 ⁇ m.
- the magnetron sputtering process parameters for preparing the nickel seed layer are: the sputtering power is 200-400W, for example, the sputtering power is 200W, 250W, 300W, 350W, or 400W,
- the high-power 200 ⁇ 400W magnetron sputtering nickel seed layer can strengthen the bonding force between nickel and amorphous alloy layer, so that the final demolding can be successful;
- the atmosphere of the sputtering is Ar gas, and the pressure of the Ar gas is 0.5 ⁇ 1.0 Pa, for example, the sputtering Ar gas pressure is 0.5 Pa, 0.6 Pa, 0.7 Pa, 0.8 Pa, 0.9 Pa, or 1 Pa.
- the thickness of the nickel seed layer is 110-130 nm, for example, the thickness of the nickel seed layer is 110 nm, 115 nm, 120 nm, 125 nm, or 130 nm.
- the electroplating process of the nickel thickened layer is: electroplating and thickening in a nickel sulfamate bath, and the temperature of the electroplating is 50-55 ° C.
- the temperature is 50 ° C, 51 ° C, 52 ° C, 53 ° C, 54 ° C or 55 ° C.
- the plating of the nickel thickened layer is performed by a three-step direct current method.
- the first and second steps are performed with a small current density growth, and the third step is performed with a large current density for rapid thickening.
- the current density of the first plating is 0.3 to 0.5 A / dm 2 , for example, the current density of the first plating is 0.3 A / dm 2 , 0.35 A / dm 2 , 0.4 A / dm 2. 0.45A / dm 2 or 0.5A / dm 2 ;
- the plating time of the first plating is 1600-2000s, for example, the plating time of the first plating is 1600s, 1650s, 1700s, 1750s, 1800s, 1850s, 1900s , 1950s or 2000s.
- the current density of the second step plating is 0.7-0.9A / dm 2 , for example, the current density of the second step plating is 0.7A / dm 2 , 0.75A / dm 2 , 0.8A / dm 2. 0.85A / dm 2 or 0.9A / dm 2 ;
- the plating time of the second step plating is 1600-2000s, for example, the plating time of the second step plating is 1600s, 1650s, 1700s, 1750s, 1800s, 1850s, 1900s , 1950s or 2000s.
- the current density of the third step of plating 0.9 ⁇ 1.2A / dm 2 for example, electroplating current density of the third step of 0.9A / dm 2, 0.95A / dm 2, 1A / dm 2 Or 1.2A / dm 2 ;
- the plating time of the third step plating is 14000 ⁇ 15000s, for example, the plating time of the third step plating is 14000s, 14100s, 14200s, 14300s, 14400s, 14500s, 14600s, 14700s, 14800s, 14900s or 15000s.
- the thickness of the nickel thickened layer is 80-120 ⁇ m, for example, the thickness of the nickel thickened layer is 80 ⁇ m, 85 ⁇ m, 90 ⁇ m, 95 ⁇ m, 100 ⁇ m, 105 ⁇ m, 110 ⁇ m, 115 ⁇ m, or 120 ⁇ m.
- the preparation method includes the following steps:
- step 2) The surface of the amorphous alloy layer obtained in step 1) is magnetron sputtered with a nickel seed layer having a thickness of 110 to 130 nm, wherein the sputtering power is 200 to 400 W, and the sputtering atmosphere is Ar gas.
- the pressure of the Ar gas is 0.5 to 1.0 Pa;
- the surface of the nickel seed layer obtained in step 2) is electroplated with a nickel thickened layer having a thickness of 80 to 120 ⁇ m using a three-step DC method to obtain a composite template having an amorphous alloy layer and a nickel base layer, wherein,
- the current density of the first plating is 0.3 to 0.5 A / dm 2
- the plating time of the first plating is 1600 to 2000 s
- the current density of the second plating is 0.7 to 0.9 A / dm 2
- the The plating time of the second step plating is 1600 to 2000s
- the current density of the third step plating is 0.9 to 1.2A / dm 2
- the plating time of the third step plating is 14000 to 15000s;
- the flexible nano-imprint template provided by the present disclosure has excellent performance, combines the advantages of higher hardness of nickel metal, good ductility, and smooth corrosion resistance of amorphous alloy, and has arithmetic below 1nm.
- Average roughness (Ra) easy to demold, good flexibility, good mechanical properties and resistance to photoacid corrosion:
- the flexible nano-imprint template provided in the present disclosure has a relatively low roughness, and the arithmetic average roughness is less than 1 nm, while the roughness of a common nickel template is generally several nanometers;
- the flexible nano-imprint template provided by the present disclosure has good mechanical properties, for example, the Young's modulus of the flexible nano-imprint template when using a zirconium-based amorphous alloy layer is about 113 GPa and the hardness is about 2.9 GPa;
- the flexible nanoimprint template provided by the present disclosure has strong resistance to photoacid corrosion. Since the amorphous alloy has no grain boundaries, the template made with it has good corrosion resistance. In the process of ultraviolet curing nanoimprint lithography, The nano-imprinting adhesive will generate photoacid under ultraviolet light. Compared with the traditional nickel template, the flexible nano-imprinting template provided by the present disclosure has stronger photo-acid corrosion resistance;
- the process provided by the present disclosure is simple, and it is convenient to produce a limit nano-size template in a large area.
- the size of the micro-nano pattern embossed with the flexible nano-imprint template prepared by the present disclosure can be less than 20 nm.
- FIG. 1 is a schematic structural diagram of a flexible nano-imprint template provided by an embodiment of the present disclosure
- FIG. 2 is a flowchart of a process for manufacturing a flexible nano-imprint template according to Embodiment 1 of the present disclosure
- FIG. 3 is a flowchart of a process for manufacturing a flexible nano-imprint template according to Embodiment 2 of the present disclosure
- FIG. 4 is a flowchart of a process for manufacturing a flexible nano-imprint template according to Embodiment 3 of the present disclosure
- Example 5 (b) is an AFM image of a flexible nano-imprint template prepared in Example 1 of the present disclosure
- Example 6 (a) is a SEM image of a flexible nanoimprint template prepared in Example 2 of the present disclosure
- Example 6 (b) is an AFM image of a flexible nano-imprint template prepared in Example 2 of the present disclosure
- FIG. 7 is a flow chart of a manufacturing process of a nickel template of a comparative example of the present disclosure
- FIG. 8 (a) is a SEM image of a flexible nanoimprint template without photo-acid etching
- FIG. 9 (a) is a SEM image of a flexible nano-imprint template after 10 h of photoacid etching
- FIG. 9 (b) is a SEM image of a nickel template after 10 h of photoacid etching.
- 1-amorphous alloy layer 2-nickel base layer.
- the flexible nanoimprint template of the present disclosure is composed of an amorphous alloy layer 1 and a nickel base layer 2.
- a layer of nickel of about 100 nm is sputtered as a seed layer, and then thickened to about 100 microns by electroplating in a nickel sulfamate solution.
- the amorphous alloy layer and the nickel base layer are peeled off from the silicon template to make a flexible nano-imprint template.
- the manufacturing process of the flexible nano-imprint template in this embodiment is shown in FIG. 2.
- FIG. 5 (a) is an SEM (scanning electron microscope) image of the flexible nanoimprint template prepared in this embodiment
- FIG. 5 (b) is an AFM (atomic force microscope) image of the flexible nanoimprint template prepared in this embodiment
- the flexible nano-imprint template prepared in this embodiment is a square pillar flexible nano-imprint template
- the flexible nano-imprint prepared by this embodiment The arithmetic mean roughness (Ra) of the template is only 0.386 nm.
- a silicon template with a 600-nm line-width grating was hot-embossed at 175 ° C with a pressure of 500 Mpa.
- magnetron sputtering was performed in the next step.
- a single target of Zr 55 Cu 30 Ni 5 Al 10 composition was used at a power of 70 W to sputter an approximately 1 micron thick amorphous alloy film on the patterned PC wafer.
- a layer of nickel of about 100 nm is sputtered as a seed layer, and then thickened to about 100 microns by electroplating in a nickel sulfamate solution.
- the amorphous alloy layer and the nickel base layer are peeled off from the PC sheet to make a flexible nano-imprint template.
- the manufacturing process of the flexible nano-imprint template in this embodiment is shown in FIG. 3.
- FIG. 6 (a) is a SEM image of the flexible nano-imprint template prepared in this embodiment
- FIG. 6 (b) is an AFM image of the flexible nano-imprint template prepared in this embodiment.
- the flexible nano-imprint template prepared in this embodiment is a grating flexible nano-imprint template.
- the flexible nano-imprint template prepared by this embodiment The arithmetic mean roughness (Ra) is 0.7 nm.
- a layer of electron beam photoresist HSQ is spin-coated on a silicon wafer or ITO conductive glass, and then a nanoscale pattern is written on the silicon wafer or ITO glass wafer with an electron beam on the HSQ.
- magnetron sputtering is used, and Zr 55 is used.
- a single target with a composition of Cu 30 Ni 5 Al 10 with a power of 70 W is sputtered on the ITO or silicon template with a thickness of 1 micron of an amorphous alloy film.
- a layer of nickel of about 100 nm is sputtered as a seed layer, and then thickened to about 100 microns by electroplating in a nickel sulfamate solution.
- the amorphous alloy layer and the nickel base layer are peeled off from the silicon template or the ITO template to make a flexible nano-imprint template.
- the manufacturing process of the flexible nano-imprint template in this embodiment is shown in FIG. 4.
- the flexible nano-imprint template prepared in Examples 1-3 was tested by a nano-indenter, and the Young's modulus was 112.9 GPa and the hardness reached 2.91 GPa.
- Embodiment 3 The difference between this embodiment and Embodiment 3 is that in this embodiment, a single-target magnetron sputtering amorphous alloy thin film composed of Cu 58 Zr 20 Ti 20 Mo 2 is used. Other preparation processes are the same as those in Embodiment 3.
- the arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in the example was 0.8 nm.
- the flexible nano-imprint template prepared was tested by a nano-indenter, and the Young's modulus was 102 GPa and the hardness was 1.8 GPa.
- Embodiment 3 The difference between this embodiment and Embodiment 3 is that in this embodiment, a single-target magnetron sputtered amorphous alloy film with a composition of Mg 69 Ni 15 Gd 10 Ag 6 is used. Other preparation processes are the same as those in Embodiment 3.
- This embodiment The arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in the example was 0.75 nm.
- the flexible nano-imprint template prepared was tested by a nano-indenter, and the Young's modulus was 55 GPa and the hardness was 1.5 Gpa.
- Embodiment 3 The difference between this embodiment and Embodiment 3 is that the amorphous alloy thin film of this embodiment uses a single target of Ti 40 Zr 25 Cu 9 Ni 8 Be 18 composition, and other preparation processes are the same as those of Embodiment 3.
- This embodiment The arithmetic average roughness (Ra) of the prepared flexible nano-imprint template was 0.86 nm.
- the flexible nano-imprint template was tested by a nano-indenter, and the Young's modulus was 68 GPa and the hardness reached 5.6 GPa.
- Embodiment 2 The difference between this embodiment and Embodiment 2 is that the thickness of the amorphous alloy thin film in this embodiment is 1.5 micrometers, and the thickness of the nickel base layer is 150 micrometers.
- Other preparation processes are the same as those in Embodiment 2.
- the arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in this embodiment is 0.5 nm.
- the flexible nano-imprint template prepared is tested by a nano-indenter, and the Young's modulus is 110 GPa and the hardness reaches 3.1 GPa. .
- Embodiment 2 This embodiment is different from Embodiment 2 in that the thickness of the amorphous alloy thin film in this embodiment is 2 micrometers, and the thickness of the nickel base layer is 200 micrometers.
- the other preparation processes are the same as those in Embodiment 2.
- the arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in this embodiment is 0.8 nm.
- the flexible nano-imprint template prepared is tested by a nano-indenter, and the Young's modulus is 113 GPa and the hardness reaches 3.0 GPa. .
- the template of this comparative example is a simple nickel template, and the preparation process is as follows:
- a nickel seed layer with a thickness of about 100 nm is plated on the silicon template by electron beam evaporation or magnetron sputtering, and then thickened to about 100 ⁇ m by electroplating in a nickel sulfamate solution. Finally, The nickel template was peeled from the silicon template.
- the performance of the nickel template prepared in this comparative example is as follows:
- FIG. 8 (a) is SEM image of the original flexible nano-imprinted template etched by photoacid
- Figure 8 (b) is the SEM image of the original nickel template not etched by photoacid, as can be seen from the figure, the surface of the flexible nano-imprinted template and nickel template All are smooth.
- the SEM images of the flexible nano-imprint template and nickel template were shown in FIG. 9. As can be seen from FIG.
- the flexible nanoimprint template provided by the present disclosure has an arithmetic average roughness of less than 1nm, which is convenient for demolding, has good flexibility, has good mechanical properties and photoacid corrosion resistance, and uses the flexible nanoimprint provided by the present disclosure.
- the micro-nano pattern size of the imprint template can be less than 20nm, which can be used for nano-imprint of small size and high-precision graphics.
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Abstract
Description
本公开属于纳米压印模板技术领域,例如涉及一种柔性纳米压印模板及其制备方法。The disclosure belongs to the technical field of nano-imprint templates, for example, relates to a flexible nano-imprint template and a preparation method thereof.
纳米压印技术是二十世纪九十年代美国普林斯顿大学的Stephen Y.Chou等首先提出的一种全新的纳米图形复制方法。该技术将传统的模板复制原理应用到了微观制造领域,克服了传统光学光刻对特殊曝光束源、高精度聚集系统、极短波长透镜系统等的限制和要求,具有超高分辨率、高产量和低成本的特点。纳米压印技术主要应用于集成电路、高密度磁存储器电泳芯片、波导起偏器、量子器件、偏振光导航传感器等涉及精密纳米结构器件的制作工艺。Nano-imprint technology is a new method of nano-pattern replication first proposed by Stephen Y. Chou of Princeton University in the 1990s. This technology applies the traditional template replication principle to the field of micro-manufacturing. It overcomes the limitations and requirements of traditional optical lithography on special exposure beam sources, high-precision focusing systems, and extremely short-wavelength lens systems. It has ultra-high resolution and high yield. And low cost. Nano-imprint technology is mainly used in the manufacturing process of integrated nano-structure devices, such as integrated circuits, high-density magnetic memory electrophoresis chips, waveguide polarizers, quantum devices, and polarized light navigation sensors.
纳米压印光刻技术最关键的技术是纳米压印模板的制备,这也是与光刻技术的不同之处。纳米压印模板的质量直接决定了压印图形的好坏,因此,要制作高精度的图形,首先需要具有高品质的纳米压印模板。目前,纳米压印应用最多的模板主要是硅模板。硅模板制作流程是先经过匀胶、光刻,然后再经过干法或者湿法刻蚀制作出纳米图形。硅模板的表面光滑,但是其材质较脆,这使得硅模板的寿命难以得到保证。Hirai等科学家发现硅模板很少能经受20次的重复压印,因此,硅模板并不适合应用在工业生产中,这也成为限制纳米压印技术发展的一个关键因素。而如今,卷对卷纳米压印是能实现工业大规模高通量生产的首选方式。这就使得制备高质量的柔性纳米压印模板变得尤为关键。The most critical technology of nano-imprint lithography is the preparation of nano-imprint templates, which is also different from lithography. The quality of the nano-imprint template directly determines the quality of the embossed graphics. Therefore, to produce high-precision graphics, a high-quality nano-imprint template is required first. Currently, the most widely used template for nanoimprinting is silicon templates. The silicon template manufacturing process is to first prepare the nano-pattern through homogenization, photolithography, and then dry or wet etching. The surface of the silicon template is smooth, but its material is brittle, which makes it difficult to guarantee the life of the silicon template. Scientists such as Hirai found that silicon templates rarely withstand 20 repeated imprints. Therefore, silicon templates are not suitable for industrial production, which has also become a key factor limiting the development of nanoimprint technology. Nowadays, roll-to-roll nanoimprinting is the preferred method to enable large-scale, high-throughput production in industry. This makes the preparation of high-quality flexible nanoimprint templates particularly critical.
目前,应用最多的柔性纳米压印模板是镍模板。镍模板的典型制作方法是在母模板(硅模板或者高分子模板)上溅射一层导电种子层,而后进行电镀增厚,最后与母模板脱模而制得镍模板。镍模板具有较高的强度与硬度,高的熔 点和良好的热传导率。At present, the most widely used flexible nanoimprint template is a nickel template. A typical manufacturing method of a nickel template is to sputter a conductive seed layer on a mother template (silicon template or polymer template), then thicken it by electroplating, and finally release the nickel template from the mother template to obtain a nickel template. Nickel template has high strength and hardness, high melting point and good thermal conductivity.
但是,镍模板通常具有几个纳米的粗糙度,这使得镍模板脱模较难,特别是紫外固化型的纳米压印,一般需要进行镍模板表面的疏水处理,但是疏水处理效果会随着压印的进行变差。在卷对卷压印机进行紫外固化压印时,镍模板长时间和纳米压印胶接触,胶中含有的光酸会对镍模板缓慢腐蚀,从而影响镍模板的图形精度以及压印效果。而且,由于镍模板晶粒大小以及粗糙度等的原因,由此模板上制作的微纳图案最小尺寸很难做到20纳米以下。这些因素在一定程度上影响了镍模板在卷对卷纳米压印,特别是小尺寸高精度纳米压印领域的应用。However, nickel templates usually have a roughness of a few nanometers, which makes it difficult to release the nickel template, especially for UV-cured nano-imprinting. Generally, the surface of the nickel template needs to be subjected to hydrophobic treatment. Printing progresses poorly. When the roll-to-roll embossing machine performs UV curing embossing, the nickel template is in contact with the nano-imprinting glue for a long time. The photoacid contained in the glue will slowly corrode the nickel template, which will affect the graphic accuracy of the nickel template and the imprinting effect. In addition, due to the grain size and roughness of the nickel template, the minimum size of the micro-nano pattern produced on the template is difficult to be less than 20 nanometers. These factors have affected the application of nickel templates in roll-to-roll nanoimprinting to a certain extent, especially in the field of small-size and high-precision nanoimprinting.
CN104308452A公开了一种非晶合金微纳结构压印成型模具的制备方法,包括如下步骤:步骤1:制备非晶合金片;步骤2:对非晶合金片进行表面处理:将步骤1中所得非晶合金片的一面(或切割面)进行打磨抛光,得到一侧表面光滑的非晶合金片;步骤3:制备模板:利用光刻技术或激光干涉刻蚀方法制备模板,在抛光硅片的表面刻蚀加工出所设计的图案,作为金属表面微纳米压印成型模具的微纳结构,以用作非晶合金片热塑性模压或压印的模板;或者使用阳极氧化铝作为非晶合金片热塑性模压或压印的模板;步骤4:热塑性模压成型:将步骤2中一侧抛光后的非晶合金片的抛光面与步骤3中所述模具有微纳结构的一面相对,对叠接触在一起后放置于模具中,加热至所述非晶合金片的过冷液相温区并保温,然后施加一定的压力,保载一段时间;步骤5:卸载:卸去施加的压力,冷却模具,并取下模板和非晶合金片,此时,所述非晶合金片表面与模板贴合,并形成与模板相对应的微纳结构;步骤6:脱模:将步骤5所得非晶合金片和模板放置于KOH或NaOH溶液中,使模板被腐蚀掉,从而实现非晶合金片与模板的分离,得到一种非晶合金微纳结构压印成型模具。该发明提出采用强度高、硬度高、耐蚀性好的高性能非晶合金材料作为微纳米结构成型的模具材料,利用其精确成型特征,提出了热塑性模压成型技术来制备具有微纳米结构且尺寸均匀的成型模具,并将该模具用于多种金属的压印成型、 聚合物材料的模压成型和快速压印成型,制备出具有微纳米结构的金属材料和聚合物材料。但是,采用非晶合金片作为模板,不能做成柔性模板,且其机械性能有待进一步提高;另外,单用非晶合金片做模板成本高:其脱模方式选择将硅模板腐蚀掉,这意味着母模板只能使用一次,而硅模板制备成本(特别是大面积纳米尺度的硅模板)是非常高的;因此非晶合金片制作的模板在卷对卷纳米压印,特别是小尺寸高精度纳米压印领域的应用受到了限制。CN104308452A discloses a method for preparing an amorphous alloy micro-nano structure embossing mold, which includes the following steps: Step 1: Preparation of an amorphous alloy sheet; Step 2: Surface treatment of the amorphous alloy sheet: Non-obtained in
发明内容Summary of the Invention
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。The following is an overview of the topics detailed in this article. This summary is not intended to limit the scope of protection of the claims.
本公开提供一种柔性纳米压印模板及其制备方法,所述柔性纳米压印模板具有1nm以下的算术平均粗糙度(Ra),方便脱模,柔性好,具有良好的力学性能和耐光酸腐蚀性,可用于小尺寸高精度图形的纳米压印。The present disclosure provides a flexible nano-imprint template and a method for preparing the same. The flexible nano-imprint template has an arithmetic average roughness (Ra) of less than 1 nm, is convenient for demolding, has good flexibility, has good mechanical properties, and is resistant to photoacid corrosion. It can be used for nano-imprinting of small size and high-precision graphics.
第一方面,本公开提供一种柔性纳米压印模板,所述柔性纳米压印模板由非晶合金层和镍基底层复合而成。In a first aspect, the present disclosure provides a flexible nano-imprint template, which is composed of an amorphous alloy layer and a nickel base layer.
本公开将非晶合金应用于纳米压印模板,非晶合金具有一系列优异的性能,例如:较低的粗糙度,高的耐腐蚀耐磨损性能,较高的强度硬度等;镍模板具有较高的强度与硬度,高的熔点和良好的热传导率。但是,如果单纯使用非晶合金作为模板,有以下几个缺点:1、成本高;2、较难制作成柔性模板;3、很难大面积制作极限纳米尺寸模板。因此,本公开将非晶合金与镍复合制成的纳米压印模板为柔性的,可以应用于高通量生产的卷对卷纳米压印,在保证发挥非晶合金优异性能的同时,又有足够的机械性能。The present disclosure applies an amorphous alloy to a nano-imprint template. The amorphous alloy has a series of excellent properties, such as: lower roughness, high corrosion and abrasion resistance, higher strength and hardness, etc .; the nickel template has Higher strength and hardness, high melting point and good thermal conductivity. However, if an amorphous alloy is simply used as a template, there are several disadvantages: 1. High cost; 2. It is difficult to make a flexible template; 3. It is difficult to make a limit nano-size template in a large area. Therefore, the nano-imprint template made of the composite of amorphous alloy and nickel in this disclosure is flexible and can be applied to roll-to-roll nano-imprint of high-throughput production. While ensuring the excellent performance of amorphous alloys, Adequate mechanical properties.
在本文一实施方式中,所述非晶合金层是通过磁控溅射工艺制备而成的。In an embodiment herein, the amorphous alloy layer is prepared by a magnetron sputtering process.
在本文一实施方式中,所述镍基底层是通过电镀工艺制备而成的。In one embodiment of the present invention, the nickel base layer is prepared by a plating process.
在本文一实施方式中,所述非晶合金层的厚度为1~2μm,例如所述非晶合金层的厚度为1μm、1.1μm、1.2μm、1.3μm、1.4μm、1.5μm、1.6μm、1.7μm、1.8μm、1.9μm或2μm。In an embodiment herein, the thickness of the amorphous alloy layer is 1 to 2 μm, for example, the thickness of the amorphous alloy layer is 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, or 2 μm.
在本文一实施方式中,所述镍基底层的厚度为100~200μm,例如所述镍基底层的厚度为100μm、110μm、120μm、130μm、140μm、150μm、160μm、170μm、180μm、190μm或200μm。In an embodiment herein, the thickness of the nickel base layer is 100-200 μm, for example, the thickness of the nickel base layer is 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm, or 200 μm.
在本文一实施方式中,所述非晶合金层选自锆基非晶合金、铜基非晶合金、镁基非晶合金、钛基非晶合金、钯基非晶合金和铁基非晶合金中的一种。In an embodiment herein, the amorphous alloy layer is selected from a zirconium-based amorphous alloy, a copper-based amorphous alloy, a magnesium-based amorphous alloy, a titanium-based amorphous alloy, a palladium-based amorphous alloy, and an iron-based amorphous alloy. One of them.
第二方面,本公开提供一种柔性纳米压印模板的制备方法,包括如下步骤:In a second aspect, the present disclosure provides a method for preparing a flexible nano-imprint template, including the following steps:
1)在母模板上磁控溅射一层非晶合金层;1) Magnetron sputtering an amorphous alloy layer on the master template;
2)在步骤1)得到的非晶合金层的表面磁控溅射一层镍种子层;2) magnetron sputtering a nickel seed layer on the surface of the amorphous alloy layer obtained in step 1);
3)在步骤2)得到的镍种子层的表面电镀一层镍增厚层,得到具有非晶合金层和镍基底层的复合模板;3) electroplating a nickel thickened layer on the surface of the nickel seed layer obtained in step 2) to obtain a composite template having an amorphous alloy layer and a nickel base layer;
4)将步骤3)得到的复合模板脱去母模板,得到所述柔性纳米压印模板。4) The mother template is removed from the composite template obtained in step 3) to obtain the flexible nano-imprint template.
在本文一实施方式中,步骤1)中,所述母模板选自硅模板、高分子片材模板、ITO(氧化铟锡)导电玻璃模板、氧化铝模板和石英模板中的一种。In an embodiment of the present invention, in step 1), the mother template is selected from one of a silicon template, a polymer sheet template, an ITO (indium tin oxide) conductive glass template, an alumina template, and a quartz template.
在本文一实施方式中,步骤1)中,制备所述非晶合金层的磁控溅射工艺为:采用多元合金靶进行磁控溅射,首先用40~60W的小功率溅射,以确保更好地覆盖图形精度,例如首先用40W、45W、50W、55W或60W的小功率溅射,接着用110~120W的大电流进行溅射增厚,例如用110W、111W、112W、113W、114W、115W、116W、117W、118W、119W或120W的大电流进行溅射增厚。In an embodiment of the present invention, in step 1), the magnetron sputtering process for preparing the amorphous alloy layer is: magnetron sputtering using a multi-component alloy target, and firstly using low power sputtering of 40 to 60W to ensure Better coverage of graphics accuracy. For example, first use 40W, 45W, 50W, 55W, or 60W low-power sputtering, and then use a large current of 110 to 120W to thicken the sputtering, such as 110W, 111W, 112W, 113W, 114W. , 115W, 116W, 117W, 118W, 119W or 120W for thickening.
在本文一实施方式中,步骤1)中所述溅射的Ar(氩)气气压为0.5~1.0Pa,例如所述溅射的气氛为Ar气,所述Ar气的气压为0.5Pa、0.6Pa、0.7Pa、0.8Pa、0.9Pa或1Pa。In an embodiment of the present invention, the pressure of the sputtered Ar (argon) gas in step 1) is 0.5 to 1.0 Pa. For example, the sputtered atmosphere is Ar gas, and the pressure of the Ar gas is 0.5 Pa, 0.6 Pa, 0.7Pa, 0.8Pa, 0.9Pa or 1Pa.
在本文一实施方式中,所述非晶合金层的厚度为1~2μm,例如所述非晶合金层的厚度为1μm、1.1μm、1.2μm、1.3μm、1.4μm、1.5μm、1.6μm、1.7μm、1.8μm、1.9μm或2μm。In an embodiment herein, the thickness of the amorphous alloy layer is 1 to 2 μm, for example, the thickness of the amorphous alloy layer is 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, or 2 μm.
由于非晶合金的导电性不好,直接用非晶合金层作种子层进行镍电镀增厚 容易出现电镀不均匀的现象,因此需要制备一层镍种子层。Due to the poor conductivity of the amorphous alloy, the use of an amorphous alloy layer as the seed layer to thicken nickel plating is prone to non-uniform plating, so it is necessary to prepare a nickel seed layer.
在本文一实施方式中,步骤2)中,制备所述镍种子层的磁控溅射工艺参数为:溅射功率为200~400W,例如溅射功率为200W、250W、300W、350W或400W,大功率200~400W磁控溅射镍种子层可以加强镍和非晶合金层的结合力,使得最后脱模得以成功;所述溅射的气氛为Ar气,所述Ar气的气压为0.5~1.0Pa,例如溅射的Ar气气压为0.5Pa、0.6Pa、0.7Pa、0.8Pa、0.9Pa或1Pa。In an embodiment of the present invention, in step 2), the magnetron sputtering process parameters for preparing the nickel seed layer are: the sputtering power is 200-400W, for example, the sputtering power is 200W, 250W, 300W, 350W, or 400W, The high-power 200 ~ 400W magnetron sputtering nickel seed layer can strengthen the bonding force between nickel and amorphous alloy layer, so that the final demolding can be successful; the atmosphere of the sputtering is Ar gas, and the pressure of the Ar gas is 0.5 ~ 1.0 Pa, for example, the sputtering Ar gas pressure is 0.5 Pa, 0.6 Pa, 0.7 Pa, 0.8 Pa, 0.9 Pa, or 1 Pa.
在本文一实施方式中,所述镍种子层的厚度为110~130nm,例如所述镍种子层的厚度为110nm、115nm、120nm、125nm或130nm。In an embodiment herein, the thickness of the nickel seed layer is 110-130 nm, for example, the thickness of the nickel seed layer is 110 nm, 115 nm, 120 nm, 125 nm, or 130 nm.
在本文一实施方式中,步骤3)中,所述镍增厚层的电镀工艺为:在氨基磺酸镍盐浴中进行电镀增厚,所述电镀的温度为50~55℃,例如电镀的温度为50℃、51℃、52℃、53℃、54℃或55℃。In an embodiment of the present invention, in step 3), the electroplating process of the nickel thickened layer is: electroplating and thickening in a nickel sulfamate bath, and the temperature of the electroplating is 50-55 ° C. The temperature is 50 ° C, 51 ° C, 52 ° C, 53 ° C, 54 ° C or 55 ° C.
在本文一实施方式中,所述镍增厚层的电镀使用三步直流法进行电镀,第一步电镀和第二步电镀为小电流密度生长,第三步电镀为大电流密度快速增厚。In an embodiment of the present invention, the plating of the nickel thickened layer is performed by a three-step direct current method. The first and second steps are performed with a small current density growth, and the third step is performed with a large current density for rapid thickening.
在本文一实施方式中,所述第一步电镀的电流密度为0.3~0.5A/dm 2,例如第一步电镀的电流密度为0.3A/dm 2、0.35A/dm 2、0.4A/dm 2、0.45A/dm 2或0.5A/dm 2;所述第一步电镀的电镀时间为1600~2000s,例如第一步电镀的电镀时间为1600s、1650s、1700s、1750s、1800s、1850s、1900s、1950s或2000s。 In an embodiment of the present invention, the current density of the first plating is 0.3 to 0.5 A / dm 2 , for example, the current density of the first plating is 0.3 A / dm 2 , 0.35 A / dm 2 , 0.4 A / dm 2. 0.45A / dm 2 or 0.5A / dm 2 ; the plating time of the first plating is 1600-2000s, for example, the plating time of the first plating is 1600s, 1650s, 1700s, 1750s, 1800s, 1850s, 1900s , 1950s or 2000s.
在本文一实施方式中,所述第二步电镀的电流密度为0.7~0.9A/dm 2,例如第二步电镀的电流密度为0.7A/dm 2、0.75A/dm 2、0.8A/dm 2、0.85A/dm 2或0.9A/dm 2;所述第二步电镀的电镀时间为1600~2000s,例如第二步电镀的电镀时间为1600s、1650s、1700s、1750s、1800s、1850s、1900s、1950s或2000s。 In an embodiment of the present invention, the current density of the second step plating is 0.7-0.9A / dm 2 , for example, the current density of the second step plating is 0.7A / dm 2 , 0.75A / dm 2 , 0.8A / dm 2. 0.85A / dm 2 or 0.9A / dm 2 ; the plating time of the second step plating is 1600-2000s, for example, the plating time of the second step plating is 1600s, 1650s, 1700s, 1750s, 1800s, 1850s, 1900s , 1950s or 2000s.
在本文一实施方式中,所述第三步电镀的电流密度为0.9~1.2A/dm
2,例如第三步电镀的电流密度为0.9A/dm
2、0.95A/dm
2、1A/dm
2或1.2A/dm
2;所述第三步电镀的电镀时间为14000~15000s,例如第三步电镀的电镀时间为14000s、14100s、14200s、14300s、14400s、14500s、14600s、14700s、14800s、14900s或15000s。
In one embodiment described herein, the current density of the third step of plating 0.9 ~ 1.2A / dm 2, for example, electroplating current density of the third step of 0.9A / dm 2, 0.95A / dm 2, 1A /
在本文一实施方式中,所述镍增厚层的厚度为80~120μm,例如所述镍增厚层的厚度为80μm、85μm、90μm、95μm、100μm、105μm、110μm、115μm或120μm。In an embodiment herein, the thickness of the nickel thickened layer is 80-120 μm, for example, the thickness of the nickel thickened layer is 80 μm, 85 μm, 90 μm, 95 μm, 100 μm, 105 μm, 110 μm, 115 μm, or 120 μm.
在本文一实施方式中,所述制备方法包括如下步骤:In an embodiment herein, the preparation method includes the following steps:
1)采用多元合金靶进行磁控溅射,首先用40~60W的小功率溅射,接着用110~120W的大电流进行溅射增厚,在母模板上磁控溅射一层1~2μm厚的非晶合金层;1) Magnetron sputtering using a multiple alloy target, first with a low power sputtering of 40 to 60W, followed by thickening with a large current of 110 to 120W, and magnetron sputtering a layer of 1 to 2 μm on the master template Thick amorphous alloy layer;
2)在步骤1)得到的非晶合金层的表面磁控溅射一层厚度为110~130nm的镍种子层,其中,溅射功率为200~400W,所述溅射的气氛为Ar气,所述Ar气的气压为0.5~1.0Pa;2) The surface of the amorphous alloy layer obtained in step 1) is magnetron sputtered with a nickel seed layer having a thickness of 110 to 130 nm, wherein the sputtering power is 200 to 400 W, and the sputtering atmosphere is Ar gas. The pressure of the Ar gas is 0.5 to 1.0 Pa;
3)在步骤2)得到的镍种子层的表面使用三步直流法电镀一层厚度为80~120μm的镍增厚层,得到具有非晶合金层和镍基底层的复合模板,其中,所述第一步电镀的电流密度为0.3~0.5A/dm 2,所述第一步电镀的电镀时间为1600~2000s,所述第二步电镀的电流密度为0.7~0.9A/dm 2,所述第二步电镀的电镀时间为1600~2000s,所述第三步电镀的电流密度为0.9~1.2A/dm 2,所述第三步电镀的电镀时间为14000~15000s; 3) The surface of the nickel seed layer obtained in step 2) is electroplated with a nickel thickened layer having a thickness of 80 to 120 μm using a three-step DC method to obtain a composite template having an amorphous alloy layer and a nickel base layer, wherein, The current density of the first plating is 0.3 to 0.5 A / dm 2 , the plating time of the first plating is 1600 to 2000 s, and the current density of the second plating is 0.7 to 0.9 A / dm 2 , the The plating time of the second step plating is 1600 to 2000s, the current density of the third step plating is 0.9 to 1.2A / dm 2 , and the plating time of the third step plating is 14000 to 15000s;
4)将步骤3)得到的复合模板脱去母模板,得到所述柔性纳米压印模板。4) The mother template is removed from the composite template obtained in step 3) to obtain the flexible nano-imprint template.
与相关技术相比,本公开提供的的柔性纳米压印模板具有优良的性能,结合了镍金属较高的强硬度、好的延展性能和非晶合金光滑耐腐蚀的优点,具有1nm以下的算术平均粗糙度(Ra),方便脱模,柔性好,具有良好的力学性能和耐光酸腐蚀性:Compared with the related technology, the flexible nano-imprint template provided by the present disclosure has excellent performance, combines the advantages of higher hardness of nickel metal, good ductility, and smooth corrosion resistance of amorphous alloy, and has arithmetic below 1nm. Average roughness (Ra), easy to demold, good flexibility, good mechanical properties and resistance to photoacid corrosion:
(1)本公开提供的柔性纳米压印模板具有较低的粗糙度,算术平均粗糙度小于1nm,而普通的镍模板粗糙度一般为几个纳米;(1) The flexible nano-imprint template provided in the present disclosure has a relatively low roughness, and the arithmetic average roughness is less than 1 nm, while the roughness of a common nickel template is generally several nanometers;
(2)本公开提供的柔性纳米压印模板具有较好的力学性能,例如采用锆基非晶合金层时的柔性纳米压印模板的杨氏模量为113GPa左右,硬度为2.9GPa左右;(2) The flexible nano-imprint template provided by the present disclosure has good mechanical properties, for example, the Young's modulus of the flexible nano-imprint template when using a zirconium-based amorphous alloy layer is about 113 GPa and the hardness is about 2.9 GPa;
(3)本公开提供的柔性纳米压印模板具有很强的耐光酸腐蚀性,由于非晶合金没有晶界,用它制作的模板耐腐蚀性好,而在紫外固化纳米压印光刻过程中,纳米压印胶在紫外光下会产生光酸,相比于传统镍模板,本公开提供的柔性纳米压印模板具有更强的耐光酸腐蚀性;(3) The flexible nanoimprint template provided by the present disclosure has strong resistance to photoacid corrosion. Since the amorphous alloy has no grain boundaries, the template made with it has good corrosion resistance. In the process of ultraviolet curing nanoimprint lithography, The nano-imprinting adhesive will generate photoacid under ultraviolet light. Compared with the traditional nickel template, the flexible nano-imprinting template provided by the present disclosure has stronger photo-acid corrosion resistance;
(4)本公开提供的工艺简单,方便大面积制作极限纳米尺寸模板,用本公开制得的柔性纳米压印模板压印的微纳图案尺寸可以做到20nm以下。(4) The process provided by the present disclosure is simple, and it is convenient to produce a limit nano-size template in a large area. The size of the micro-nano pattern embossed with the flexible nano-imprint template prepared by the present disclosure can be less than 20 nm.
在阅读并理解了附图和详细描述后,可以明白其他方面。After reading and understanding the drawings and detailed description, other aspects can be understood.
图1为本公开实施例提供的柔性纳米压印模板的结构示意图;1 is a schematic structural diagram of a flexible nano-imprint template provided by an embodiment of the present disclosure;
图2为本公开实施例1的柔性纳米压印模板的制作工艺流程图;FIG. 2 is a flowchart of a process for manufacturing a flexible nano-imprint template according to
图3为本公开实施例2的柔性纳米压印模板的制作工艺流程图;3 is a flowchart of a process for manufacturing a flexible nano-imprint template according to
图4为本公开实施例3的柔性纳米压印模板的制作工艺流程图;4 is a flowchart of a process for manufacturing a flexible nano-imprint template according to Embodiment 3 of the present disclosure;
图5(a)为本公开的实施例1的制得的柔性纳米压印模板的SEM图像;5 (a) is a SEM image of the flexible nanoimprint template prepared in Example 1 of the present disclosure;
图5(b)为本公开实施例1制得的柔性纳米压印模板的AFM图像;5 (b) is an AFM image of a flexible nano-imprint template prepared in Example 1 of the present disclosure;
图6(a)为本公开实施例2制得的柔性纳米压印模板的SEM图像;6 (a) is a SEM image of a flexible nanoimprint template prepared in Example 2 of the present disclosure;
图6(b)为本公开实施例2制得的柔性纳米压印模板的AFM图像;6 (b) is an AFM image of a flexible nano-imprint template prepared in Example 2 of the present disclosure;
图7为本公开对比例的镍模板的制作工艺流程图;7 is a flow chart of a manufacturing process of a nickel template of a comparative example of the present disclosure;
图8(a)为未经光酸腐蚀的柔性纳米压印模板的SEM图像;FIG. 8 (a) is a SEM image of a flexible nanoimprint template without photo-acid etching;
图8(b)为未经光酸腐蚀的镍模板的SEM图像;8 (b) is a SEM image of a nickel template that has not been photo-etched;
图9(a)为经光酸腐蚀10h后的柔性纳米压印模板的SEM图像;FIG. 9 (a) is a SEM image of a flexible nano-imprint template after 10 h of photoacid etching;
图9(b)为经光酸腐蚀10h后的镍模板的SEM图像。FIG. 9 (b) is a SEM image of a nickel template after 10 h of photoacid etching.
附图标记如下:The reference signs are as follows:
1-非晶合金层;2-镍基底层。1-amorphous alloy layer; 2-nickel base layer.
下面结合附图,并通过具体实施方式来进一步说明本公开的技术方案。The technical solutions of the present disclosure will be further described below with reference to the accompanying drawings and specific embodiments.
如图1所示,本公开的柔性纳米压印模板由非晶合金层1和镍基底层2复 合而成。As shown in FIG. 1, the flexible nanoimprint template of the present disclosure is composed of an
实施例1Example 1
将10微升的FDTS(1H,1H,2H,2H-全氟癸基三氯硅烷)放入20毫升的庚烷中,随后放入制作好的硅模板浸泡10分钟,然后取出硅模板用纯庚烷清洗,最后放在100℃热板烘烤10分钟,完成硅模板的疏水处理。下一步进行磁控溅射,用Zr 55Cu 30Ni 5Al 10成分的单靶以70W的功率在硅模板上溅射1微米厚的非晶合金薄膜。接着再溅射一层100nm左右的镍作为种子层,随后在氨基磺酸镍盐溶液中进行电镀增厚至100微米左右。最后将非晶合金层与镍基底层从硅模板揭下来,制成柔性纳米压印模板,本实施例的柔性纳米压印模板的制作流程如图2所示。 Put 10 microliters of FDTS (1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane) into 20 ml of heptane, and then soak the prepared silicon template for 10 minutes, and then remove the silicon template with pure It was washed with heptane, and finally baked on a hot plate at 100 ° C for 10 minutes to complete the hydrophobic treatment of the silicon template. Next, magnetron sputtering was performed, and a single target of Zr 55 Cu 30 Ni 5 Al 10 component was used to sputter a 1 micron thick amorphous alloy film on a silicon template at a power of 70 W. Next, a layer of nickel of about 100 nm is sputtered as a seed layer, and then thickened to about 100 microns by electroplating in a nickel sulfamate solution. Finally, the amorphous alloy layer and the nickel base layer are peeled off from the silicon template to make a flexible nano-imprint template. The manufacturing process of the flexible nano-imprint template in this embodiment is shown in FIG. 2.
图5(a)为本实施例制得的柔性纳米压印模板的SEM(扫描电子显微镜)图像,图5(b)为本实施例制得的柔性纳米压印模板的AFM(原子力显微镜)图像。由图5(a)可以看出,本实施例制得的柔性纳米压印模板为方形柱子柔性纳米压印模板;由图5(b)可以看出,本实施例制得的柔性纳米压印模板的算术平均粗糙度(Ra)仅为0.386nm。FIG. 5 (a) is an SEM (scanning electron microscope) image of the flexible nanoimprint template prepared in this embodiment, and FIG. 5 (b) is an AFM (atomic force microscope) image of the flexible nanoimprint template prepared in this embodiment . It can be seen from FIG. 5 (a) that the flexible nano-imprint template prepared in this embodiment is a square pillar flexible nano-imprint template; as can be seen from FIG. 5 (b), the flexible nano-imprint prepared by this embodiment The arithmetic mean roughness (Ra) of the template is only 0.386 nm.
实施例2Example 2
将具有600纳米线宽光栅的硅模板,在175℃下,以500Mpa的压力热压印聚碳酸酯片(PC)。随后下一步进行磁控溅射,用Zr 55Cu 30Ni 5Al 10成分的单靶以70W的功率在图形化的PC片上溅射大约1微米厚的非晶合金薄膜。接着再溅射一层100nm左右的镍作为种子层,随后在氨基磺酸镍盐溶液中进行电镀增厚至100微米左右。最后将非晶合金层与镍基底层从PC片上揭下来,制成柔性纳米压印模板,本实施例的柔性纳米压印模板的制作流程如图3所示。 A silicon template with a 600-nm line-width grating was hot-embossed at 175 ° C with a pressure of 500 Mpa. Next, magnetron sputtering was performed in the next step. A single target of Zr 55 Cu 30 Ni 5 Al 10 composition was used at a power of 70 W to sputter an approximately 1 micron thick amorphous alloy film on the patterned PC wafer. Next, a layer of nickel of about 100 nm is sputtered as a seed layer, and then thickened to about 100 microns by electroplating in a nickel sulfamate solution. Finally, the amorphous alloy layer and the nickel base layer are peeled off from the PC sheet to make a flexible nano-imprint template. The manufacturing process of the flexible nano-imprint template in this embodiment is shown in FIG. 3.
图6(a)为本实施例制得的柔性纳米压印模板的SEM图像,图6(b)为本实施例制得的柔性纳米压印模板的AFM图像。由图6(a)可以看出,本实施例制得的柔性纳米压印模板为光栅柔性纳米压印模板;由图6(b)可以看出,本实施例制得的柔性纳米压印模板的算术平均粗糙度(Ra)为0.7nm。FIG. 6 (a) is a SEM image of the flexible nano-imprint template prepared in this embodiment, and FIG. 6 (b) is an AFM image of the flexible nano-imprint template prepared in this embodiment. It can be seen from FIG. 6 (a) that the flexible nano-imprint template prepared in this embodiment is a grating flexible nano-imprint template. As can be seen from FIG. 6 (b), the flexible nano-imprint template prepared by this embodiment The arithmetic mean roughness (Ra) is 0.7 nm.
实施例3Example 3
在硅片或者ITO导电玻璃上旋涂一层电子束光刻胶HSQ,接着在硅片或者ITO玻璃片上利用电子束在HSQ上写出纳米级图案,显影之后进行磁控溅射,用Zr 55Cu 30Ni 5Al 10成分的单靶以70W的功率在ITO或者硅模板上溅射1微米厚的非晶合金薄膜。接着再溅射一层100nm左右的镍作为种子层,随后在氨基磺酸镍盐溶液中进行电镀增厚至100微米左右。最后将非晶合金层与镍基底层从硅模板或者ITO模板揭下来,制成柔性纳米压印模板,本实施例的柔性纳米压印模板的制作流程如图4所示。 A layer of electron beam photoresist HSQ is spin-coated on a silicon wafer or ITO conductive glass, and then a nanoscale pattern is written on the silicon wafer or ITO glass wafer with an electron beam on the HSQ. After development, magnetron sputtering is used, and Zr 55 is used. A single target with a composition of Cu 30 Ni 5 Al 10 with a power of 70 W is sputtered on the ITO or silicon template with a thickness of 1 micron of an amorphous alloy film. Next, a layer of nickel of about 100 nm is sputtered as a seed layer, and then thickened to about 100 microns by electroplating in a nickel sulfamate solution. Finally, the amorphous alloy layer and the nickel base layer are peeled off from the silicon template or the ITO template to make a flexible nano-imprint template. The manufacturing process of the flexible nano-imprint template in this embodiment is shown in FIG. 4.
实施例1-3制得的柔性纳米压印模板,经纳米压痕仪试,杨氏模量为112.9GPa,硬度达到2.91GPa。The flexible nano-imprint template prepared in Examples 1-3 was tested by a nano-indenter, and the Young's modulus was 112.9 GPa and the hardness reached 2.91 GPa.
实施例4Example 4
本实施例与实施例3的不同之处在于,本实施例中采用Cu 58Zr 20Ti 20Mo 2成分的单靶磁控溅射非晶合金薄膜,其他的制备工艺与实施例3相同,本实施例制得的柔性纳米压印模板的算术平均粗糙度(Ra)为0.8nm,将制得的柔性纳米压印模板经纳米压痕仪试,杨氏模量为102GPa,硬度为1.8GPa。 The difference between this embodiment and Embodiment 3 is that in this embodiment, a single-target magnetron sputtering amorphous alloy thin film composed of Cu 58 Zr 20 Ti 20 Mo 2 is used. Other preparation processes are the same as those in Embodiment 3. The arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in the example was 0.8 nm. The flexible nano-imprint template prepared was tested by a nano-indenter, and the Young's modulus was 102 GPa and the hardness was 1.8 GPa.
实施例5Example 5
本实施例与实施例3的不同之处在于,本实施例中采用Mg 69Ni 15Gd 10Ag 6成分的单靶磁控溅射非晶合金薄膜,其他的制备工艺与实施例3相同,本实施例制得的柔性纳米压印模板的算术平均粗糙度(Ra)为0.75nm,将制得的柔性纳米压印模板经纳米压痕仪试,杨氏模量为55GPa,硬度为1.5Gpa。 The difference between this embodiment and Embodiment 3 is that in this embodiment, a single-target magnetron sputtered amorphous alloy film with a composition of Mg 69 Ni 15 Gd 10 Ag 6 is used. Other preparation processes are the same as those in Embodiment 3. This embodiment The arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in the example was 0.75 nm. The flexible nano-imprint template prepared was tested by a nano-indenter, and the Young's modulus was 55 GPa and the hardness was 1.5 Gpa.
实施例6Example 6
本实施例与实施例3的不同之处在于,本实施例的非晶合金薄膜采用Ti 40Zr 25Cu 9Ni 8Be 18成分的单靶,其他的制备工艺与实施例3相同,本实施例制得的柔性纳米压印模板的算术平均粗糙度(Ra)为0.86nm,将制得的柔性纳米压印模板经纳米压痕仪试,杨氏模量为68GPa,硬度达到5.6GPa。 The difference between this embodiment and Embodiment 3 is that the amorphous alloy thin film of this embodiment uses a single target of Ti 40 Zr 25 Cu 9 Ni 8 Be 18 composition, and other preparation processes are the same as those of Embodiment 3. This embodiment The arithmetic average roughness (Ra) of the prepared flexible nano-imprint template was 0.86 nm. The flexible nano-imprint template was tested by a nano-indenter, and the Young's modulus was 68 GPa and the hardness reached 5.6 GPa.
实施例7Example 7
本实施例与实施例2的不同之处在于,本实施例中非晶合金薄膜的厚度为1.5微米,镍基底层的厚度为150微米,其他的制备工艺与实施例2相同。The difference between this embodiment and
本实施例制得的柔性纳米压印模板的算术平均粗糙度(Ra)为0.5nm,将制得的柔性纳米压印模板经纳米压痕仪试,杨氏模量为110GPa,硬度达到3.1GPa。The arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in this embodiment is 0.5 nm. The flexible nano-imprint template prepared is tested by a nano-indenter, and the Young's modulus is 110 GPa and the hardness reaches 3.1 GPa. .
实施例8Example 8
本实施例与实施例2的不同之处在于,本实施例中非晶合金薄膜的厚度为2微米,镍基底层的厚度为200微米,其他的制备工艺与实施例2相同。This embodiment is different from
本实施例制得的柔性纳米压印模板的算术平均粗糙度(Ra)为0.8nm,将制得的柔性纳米压印模板经纳米压痕仪试,杨氏模量为113GPa,硬度达到3.0GPa。The arithmetic average roughness (Ra) of the flexible nano-imprint template prepared in this embodiment is 0.8 nm. The flexible nano-imprint template prepared is tested by a nano-indenter, and the Young's modulus is 113 GPa and the hardness reaches 3.0 GPa. .
对比例Comparative example
本对比例的模板为单纯的镍模板,制备工艺如下:The template of this comparative example is a simple nickel template, and the preparation process is as follows:
首先在硅片上进行光刻刻蚀,在表面制作出微纳结构,如图7所示。制作完成以后,在硅模板上用电子束蒸镀或者磁控溅射的方法镀一层厚度约为100nm的镍种子层,接着在氨基磺酸镍盐溶液中进行电镀增厚至100μm左右,最后将镍模板从硅模板上剥离。First, photolithographic etching is performed on a silicon wafer, and a micro-nano structure is fabricated on the surface, as shown in FIG. 7. After the fabrication is completed, a nickel seed layer with a thickness of about 100 nm is plated on the silicon template by electron beam evaporation or magnetron sputtering, and then thickened to about 100 μm by electroplating in a nickel sulfamate solution. Finally, The nickel template was peeled from the silicon template.
本对比例制备得到的镍模板,测试其性能指标如下:The performance of the nickel template prepared in this comparative example is as follows:
AFM表征镍模板的算术平均粗糙度Ra=2.5nm。AFM characterizes the arithmetic mean roughness Ra = 2.5 nm of the nickel template.
将实施例制备的柔性纳米压印模板和对比例制得的镍模板进行耐光酸腐蚀性实验:未经光酸腐蚀的原始模板的SEM图如图8所示,其中图8(a)为未经光酸腐蚀的原始柔性纳米压印模板的SEM图,图8(b)为未经光酸腐蚀的原始镍模板的SEM图,由图可以看出,柔性纳米压印模板和镍模板的表面都是光滑的。再将柔性纳米压印模板和镍模板光酸腐蚀10小时后,柔性纳米压印模板和镍模板的SEM图如图9所示,由图9(a)可以看出,经光酸腐蚀后,柔性纳米压印模板依然保持平滑的表面,由图9(b)可以看出,经光酸腐蚀后镍模板表面已出现密集的腐蚀坑。因此,本公开实施例制得的柔性纳米压印模板的耐光酸腐蚀性要强于镍模板的耐光酸腐蚀性。The flexible nanoimprint template prepared in the example and the nickel template prepared in the comparative example were subjected to a photoacid corrosion resistance experiment. The SEM image of the original template without photoacid corrosion is shown in FIG. 8, where FIG. 8 (a) is SEM image of the original flexible nano-imprinted template etched by photoacid, Figure 8 (b) is the SEM image of the original nickel template not etched by photoacid, as can be seen from the figure, the surface of the flexible nano-imprinted template and nickel template All are smooth. After the flexible nano-imprint template and nickel template were photo-etched for 10 hours, the SEM images of the flexible nano-imprint template and nickel template were shown in FIG. 9. As can be seen from FIG. 9 (a), after photo-acid etching, The flexible nano-imprint template still maintains a smooth surface. As can be seen from Fig. 9 (b), dense corrosion pits have appeared on the surface of the nickel template after photoacid etching. Therefore, the photoacid corrosion resistance of the flexible nanoimprint template prepared in the embodiment of the present disclosure is stronger than the photoacid corrosion resistance of the nickel template.
综上可知,本公开提供的的柔性纳米压印模板,具有1nm以下的算术平均粗糙度,方便脱模,柔性好,具有良好的力学性能和耐光酸腐蚀性,用本公开提供的柔性纳米压印模板压印的微纳图案尺寸可以做到20nm以下,可用于小尺寸高精度图形的纳米压印。In summary, the flexible nanoimprint template provided by the present disclosure has an arithmetic average roughness of less than 1nm, which is convenient for demolding, has good flexibility, has good mechanical properties and photoacid corrosion resistance, and uses the flexible nanoimprint provided by the present disclosure. The micro-nano pattern size of the imprint template can be less than 20nm, which can be used for nano-imprint of small size and high-precision graphics.
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| CN103576448A (en) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Method for preparing porous antireflection film through nanometer coining |
| CN103911587A (en) * | 2012-12-31 | 2014-07-09 | 比亚迪股份有限公司 | Application of amorphous alloy material source, composite material and preparation method thereof |
| US20160298219A1 (en) * | 2015-04-08 | 2016-10-13 | Iowa State University Research Foundation, Inc. | Imprinting bulk amorphous alloys at room temperature |
| CN107394558A (en) * | 2016-05-17 | 2017-11-24 | 泰科电子(上海)有限公司 | Impression block and the method that micro-structural is formed on the coating of conducting terminal |
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| CN101423968B (en) * | 2008-10-17 | 2010-07-07 | 哈尔滨工程大学 | Method for manufacturing electric plating diamond burr |
| JP4829360B2 (en) * | 2010-04-27 | 2011-12-07 | 株式会社東芝 | Stamper manufacturing method |
| CN101871101B (en) * | 2010-06-13 | 2011-12-21 | 东北大学 | Preparation method of magnesium alloy surface metal plating layer |
| CN102465251B (en) * | 2010-11-19 | 2014-08-20 | 鸿富锦精密工业(深圳)有限公司 | Coated piece and manufacturing method thereof |
| CN102230982B (en) * | 2011-06-17 | 2013-06-19 | 中山大学 | Optical diaphragm structure and soft lithography seal master pattern which is used to manufacture optical diaphragm structure |
| CN102299200B (en) * | 2011-08-22 | 2013-07-24 | 中国科学院宁波材料技术与工程研究所 | Method for preparing metal electrodes of crystal silicon solar cell |
| CN102899615B (en) * | 2012-09-17 | 2014-08-13 | 南京航空航天大学 | Method of plating zirconium copper amorphous alloy film on surface of zirconium crystal |
| CN102925869B (en) * | 2012-10-26 | 2015-01-07 | 西安交通大学 | Method for preparing amorphous/nanometer crystal multilayer-structure film |
| CN102995083B (en) * | 2012-12-07 | 2016-06-15 | 北京大学 | A kind of method adopting plating to prepare soft magnetic materials iron-nickel alloy array |
| CN103173840B (en) * | 2013-03-12 | 2015-10-21 | 白鸽磨料磨具有限公司 | A kind of preparation method of grinding plated diamond grinding wheel |
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| CN104308452A (en) * | 2014-08-21 | 2015-01-28 | 清华大学 | Amorphous alloy micro-nano structure stamping forming mould and preparation and application methods thereof |
| CN204697393U (en) * | 2015-04-09 | 2015-10-07 | 中国科学院金属研究所 | Micro-induction structure on a kind of pcb board based on iron ni-based amorphous alloy magnetic core |
| CN106086826A (en) * | 2016-07-25 | 2016-11-09 | 东莞市逸昊金属材料科技有限公司 | A kind of surface height light non-crystaline amorphous metal part and preparation method thereof |
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| CN101675174A (en) * | 2007-02-13 | 2010-03-17 | 耶鲁大学 | Method for imprinting and erasing amorphous metal alloys |
| CN102707567A (en) * | 2012-05-31 | 2012-10-03 | 大连理工大学 | Flexible-substrate-based nano-imprint template replication method |
| CN102967279A (en) * | 2012-11-22 | 2013-03-13 | 南京理工大学 | Method for accurately determining surface roughness through adopting amorphous alloy |
| CN103911587A (en) * | 2012-12-31 | 2014-07-09 | 比亚迪股份有限公司 | Application of amorphous alloy material source, composite material and preparation method thereof |
| CN103576448A (en) * | 2013-11-06 | 2014-02-12 | 无锡英普林纳米科技有限公司 | Method for preparing porous antireflection film through nanometer coining |
| US20160298219A1 (en) * | 2015-04-08 | 2016-10-13 | Iowa State University Research Foundation, Inc. | Imprinting bulk amorphous alloys at room temperature |
| CN107394558A (en) * | 2016-05-17 | 2017-11-24 | 泰科电子(上海)有限公司 | Impression block and the method that micro-structural is formed on the coating of conducting terminal |
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