TWI506163B - Reactive apparatus for vapor deposition and carrier thereof - Google Patents

Description

Reactor for vapor deposition and its bearing device

The invention discloses a reactor applied to vapor deposition, comprising a heating device and a carrier, wherein the carrier further comprises a second carrier and a first carrier having a heating coefficient of electromagnetic waves greater than that of the second carrier.

In the industrial production process, it is necessary to form a film on the surface of various products for various application requirements, for example, by vapor deposition. Since the principle of vapor deposition is to form a film on the surface of the product in atomic or molecular size, it is possible to form a film having a different thickness and composition by controlling the reaction time, temperature, and gas flow rate. And evaporation is often used in a variety of industrial and daily necessities processing applications, such as high precision, small size electronics industry.

In the process of film formation, according to the mechanism of material reaction, it can be roughly divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). The formed film may have different grain structures such as single crystal, polycrystalline, and non-crystalline due to deposition techniques, temperature in the reactor in which the reaction is carried out, gas composition introduced into the reactor, and materials on the surface of the product. In addition to meeting the above-mentioned precision and subtle requirements, the CVD or PVD process can be used to form a thin film, and impurities can be directly incorporated into the reaction gas by controlling the content and distribution of impurities in the film (dopant) Profile), the composition of the film can be precisely controlled.

One of the common thin film formation methods is Metal Organic Chemical Vapor Deposition (MOCVD). When a thin film is formed, a carrier gas is input, and a carrier gas is used to saturate the saturated vapor of the reaction source material. Take the reaction chamber and let the reaction source material on the surface of the heated substrate reaction. The gas atoms entering the reaction chamber are first adsorbed on the substrate, and collide with each other to form atomic groups on the surface of the substrate, and gradually become larger and become so-called nuclear islands. The size of the nuclear island increases due to the increase in the amount of gas atoms deposited, and the gap between the nuclear islands is also filled with the deposition to form a thin film. The film formed by depositing on the surface of the substrate in this manner still has good adhesion on substrates of various surface roughnesses. Regardless of the patterned structure of the surface of the substrate, such as grooves, protrusions or patterns, the desired film can be formed by appropriately adjusting various temperatures, reaction gas components or reaction times of the film deposition.

The reaction of film deposition is carried out in a reactor. As shown in Fig. 1, the chamber of the reactor 100 includes a carrier 4 and a heater 6, and a part of the design incorporates a cooling device in the chamber to control the reaction temperature in the chamber. . When the reaction of the MOCVD proceeds, the gas mixed with the reaction source material is introduced into the reactor 100 to form a thin film on the surface of the substrate 2, wherein the substrate 2 is heated through the carrier 4 by heat conduction and radiant heat, and the carrier 4 is heated. The structure is composed of a core layer 8 and a cladding layer 10 as shown in FIG.

According to the above, since the film is deposited on the substrate 2 by atoms of the reaction gas, the temperature of the substrate 2 and the temperature inside the cavity are important factors affecting the quality of the film. In order to heat the substrate to a temperature suitable for film formation, the cavity is made of a material that is resistant to high temperatures and does not react with the reactive gas to avoid damage to the cavity due to excessive temperature during the reaction, or internal cavity and The reaction of the introduced gas causes a variation in the quality of the film. However, the durability of the carrier also affects the cost of production. Since the carrier on which the substrate is placed is damaged during use, the surface may be damaged and the quality of the film may be affected. Therefore, it must be solved by replacing the carrier.

The invention discloses a reactor comprising a carrier and a heating carrier The heat device, wherein the carrier comprises a first carrier and a second carrier formed on the first carrier, and the electromagnetic heating coefficient of the first carrier is greater than the electromagnetic heating coefficient of the second carrier.

The present invention discloses a reactor 200 comprising a carrier and a heating device. As shown in FIG. 3, the carrier has a surface 240 including a plurality of grooves 242 for carrying the substrate 22, and further includes a first carrier 28 and a second carrier 24 located above the first carrier 28, wherein The thermal conductivity of the second carrier 24 is greater than that of the first carrier 28. The carrier gas mixed with the saturated vapor of the reaction source material is introduced into the reactor 200, and the heater 26 also heats the carrier. When the temperature reaches a predetermined temperature, the gas atoms start to deposit on the substrate 22 and form a thin film. In one embodiment, reactor 200 is used for vapor deposition, wherein the vapor deposition may be metal organic chemical vapor deposition (MOCVD). In one embodiment, the heater 26 is an electromagnetic wave heating device comprising an electromagnetic wave generating element that emits electromagnetic waves of a specific frequency range and forms an eddy current on the carrier, and the eddy current is lost through the resistor when flowing on the surface of the carrier. Heat is generated, and the substrate placed on the carrier is heated by the generated heat. In an embodiment, the first carrier 28 can directly form an eddy current on the surface of the carrier by receiving electromagnetic waves, and heat is generated when the eddy current flows through the surface of the carrier to generate heat energy, and the second carrier 24 receives the electromagnetic wave. It is impossible to generate an eddy current on the surface to raise the temperature, and it can only be heated by the first carrier 28 by radiant heat and heat conduction. In another embodiment, both the first carrier 28 and the second carrier 24 can absorb the electromagnetic waves emitted by the heater 26 to increase the temperature. The effect that the carrier body absorbs the electromagnetic wave emitted by the heater to cause the temperature rise of the carrier itself can be measured by the electromagnetic wave heating coefficient, and the electromagnetic wave heating coefficient is transmitted through the measurement of the unit mass of the object under the electromagnetic wave of the predetermined frequency range, after a certain period of time The increased temperature of the unit mass of the object; and in one embodiment, the first carrier 28 has a ratio The larger electromagnetic wave heating coefficient of the second carrier 24, that is, the first carrier 28 is irradiated by electromagnetic waves of a predetermined frequency range, and the temperature rises after a predetermined time is equal to the temperature of the second carrier 24 having the same quality. The temperature added below is larger. In one embodiment, the electromagnetic wave generating component in the heater 26 can emit electromagnetic waves having a frequency range of Very Low Frequency (VLF), wherein the frequency range of the very low frequency is between 3 KHz and 30 KHz; In a preferred embodiment, heater 26 emits electromagnetic waves at frequencies between 15 KHz and 20 KHz.

As mentioned above, the temperature in the cavity during the reaction and the temperature on the substrate affect the quality of the film deposition. Therefore, in the design of the carrier, in addition to the electromagnetic wave emitted by the heater 26, the temperature range can be increased by receiving the relative frequency range. The thermal conductivity of the material itself also affects the uniformity of the surface temperature, which in turn affects the uniformity of film deposition on the substrate. Therefore, in an embodiment, the second carrier 24 is made of a material having a higher thermal conductivity than the first carrier 28, and the surface of the second carrier 24 in contact with the substrate 22 has a relatively uniform temperature distribution, wherein the second carrier The body 24 is composed entirely of the same component, such as SiC. In addition, for the consideration of heating efficiency, the materials of the first carrier 28 and the second carrier 24 are preferably selected to have a thermal conductivity greater than 100 W/mK for the purpose of faster temperature rise. In one embodiment, the second carrier 24 is composed of a core layer 30 and a cladding layer 32 covering the core layer 30. As shown in FIG. 4, the material having a larger thermal conductivity than the first carrier 28 is used as a package. The cladding 32 is such that the second carrier 24 has a larger thermal conductivity than the first carrier 28, so that the temperature of the surface of the substrate 22 is evenly distributed. In an embodiment, the material of the first carrier 28 can be heated by absorbing electromagnetic waves emitted by the heater, the materials comprising graphite, ceramic or a combination thereof, and the core layer 30 of the second carrier 24 comprises graphite, BN, Mo, TiW or a combination thereof, and the cladding layer 32 is SiC, and the ratio of the cladding layer 32 to the core layer 30 is adjusted such that the thermal conductivity of the second carrier 24 is greater than that of the first carrier 28. In another embodiment, the core layer 30 of the second carrier 24 includes a suction The electromagnetic wave receiving material, like the first carrier 28, can absorb electromagnetic waves for heating, so that the substrate 22 on the second carrier 24 can be heated more quickly.

In an embodiment, the second carrier 24 has a higher thermal conductivity than the first carrier 28, and the first carrier 28 has a higher electromagnetic heating coefficient than the second carrier 24, such as graphite as the first carrier 28 and SiC. Second carrier 24.

As shown in FIG. 5, in another embodiment the reactor 300 includes a heater 26, a first carrier 28, a plurality of second carriers 24, and a post between the first carrier 28 and the second carrier 24. 34. The substrate 22 is placed in a recess 242 on the surface 240 of the second carrier 24, while the first carrier 28 further includes a post 34 to support the second carrier 24. When the thin film deposition process is performed, the heater 26 starts to operate, and the gas flows into the pores 16 in the first carrier 28 from the air holes 36 on the side of the first carrier 28, into which the gas in the first carrier 28 is introduced. It is a mixed gas of nitrogen and hydrogen. In one embodiment, the heater 26 directly heats the first carrier 28, and the first carrier 28 heats the absorbed radiant heat through a plurality of second carriers 24 by conduction or convection. Since the thermal conductivity of the second carrier 24 is larger than that of the first carrier 28 and the surface area is small, the surface 240 of the second carrier 24 is uniformly distributed after being heated, so that the substrate 22 directly contacting the second carrier 24 is allowed. The film can be uniformly heated, so that the film on the entire substrate 22 can be reacted in a certain temperature range, and a film having a uniform thickness can be formed in the same time, thereby avoiding a situation in which the film thickness difference on the same substrate 22 is excessively large. In another embodiment, the first carrier 28 and the plurality of second carriers 24 can be directly heated by the heater 26, so that the plurality of second carriers 24 can not only absorb heat from the first carrier 28 but also can be heated. The heater 26 is heated to reach the required temperature in a shorter time, and the second carrier 24 has a larger thermal conductivity and a smaller area, so that the entire carrier can reach a uniform temperature, so that it is located in a plurality of second The plurality of substrates 22 above the carrier 24 are uniformly heated.

The carrier body disclosed in the present invention comprises a first carrier body 28 and a second carrier body 24, wherein the second carrier body 24 has a plurality of grooves 242 on which the wafer is placed, and is placed multiple times after a plurality of thin film deposition processes. And the action of removing the wafer may cause damage due to the wafer colliding with the groove 242. In order to be able to place the wafer smoothly, the size of the groove 242 on the second carrier 24 is usually slightly larger than the size of the wafer, so that after a plurality of film depositions, the film may be attached to the groove 242. Damage to these films or grooves can also cause the wafers placed in the grooves 242 to tilt or protrude, which in turn affects the thickness of the subsequent film formation. According to the embodiment of the present invention, when the quality of the film is abnormally caused by the damage of the groove 242 or the accumulation of the film in the groove 242, only the second carrier 24 directly contacting the groove needs to be replaced, without Cost savings can be achieved by replacing the entire carrier.

The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.

2‧‧‧Substrate

4‧‧‧Carrier

6‧‧‧heater

8‧‧‧ core layer

10‧‧‧Cladding

22‧‧‧Substrate

24‧‧‧Second carrier

26‧‧‧heater

28‧‧‧First carrier

240‧‧‧ surface

242‧‧‧ Groove

30‧‧‧ core layer

32‧‧‧Cladding

16‧‧‧ pores

34‧‧‧ pillar

36‧‧‧ stomata

100, 200, 300‧‧‧ reactor

Figure 1 shows a common reactor.

Figure 2 shows a common carrier.

Figure 3 shows an embodiment of the reactor disclosed in the present invention.

FIG. 4 shows an embodiment of a second carrier disclosed in the present invention.

Figure 5 shows another embodiment of the reactor disclosed in the present invention.

22‧‧‧Substrate

24‧‧‧Second carrier

26‧‧‧heater

28‧‧‧First carrier

30‧‧‧ core layer

32‧‧‧Cladding

200‧‧‧reactor

240‧‧‧ surface

242‧‧‧ Groove

Claims (10)

A reactor for vapor deposition, comprising: a carrier; and a heating device for heating the carrier; wherein the carrier comprises a first carrier and a plurality of second carriers are formed on the first Above the carrier; wherein the first carrier comprises a different material than the plurality of second carriers. The reactor of claim 1, wherein a thermal conductivity of the plurality of second carriers is greater than a thermal conductivity of the first carrier, and an electromagnetic wave heating coefficient of the first carrier is greater than the plurality of second carriers The electromagnetic heating coefficient of the body. The reactor of claim 1, wherein each of the plurality of second carriers is composed entirely of the same component. The reactor of claim 1, wherein the heating device comprises an electromagnetic wave generating element for emitting an electromagnetic wave having a frequency of 15 to 20 kHz. The reactor of claim 1, wherein the plurality of second carriers comprise a plurality of grooves for carrying the wafer. The reactor of claim 1, wherein the first carrier further comprises a pore. A carrier device for a reactor for vapor deposition, comprising: a first carrier and a plurality of two carriers formed on the first carrier; wherein the first carrier includes the plurality of second Different materials for the carrier. The load-bearing device of claim 7, wherein the plurality of second carriers have a thermal conductivity greater than a thermal conductivity of the first carrier, and the electromagnetic heating coefficient of the first carrier is greater than the plurality of second carriers The electromagnetic heating coefficient of the body. The carrier device of claim 7, wherein each of the plurality of second carriers is composed entirely of the same component. A reactor for vapor deposition, comprising: a carrier; and a heating device for heating the carrier; wherein the carrier comprises a first carrier and a second carrier formed on the first carrier Above the body; wherein the thermal conductivity of the second carrier is greater than the thermal conductivity of the first carrier, and the electromagnetic wave heating coefficient of the first carrier is greater than the electromagnetic heating coefficient of the second carrier.