1334159 九、發明說明： C發明所屬之技術領域3 發明領域 本發明係有關於一種在採用RTP用加熱器之批式反應室 中，於製程用工間之上下區域形成不同之加熱用區域，藉個 別設定其溫度，可輕易進行反應室之溫度控制，特別是在反 應室中達成均一之溫度分佈之批式反應室之加熱裝置及其 方法。 C先前技術3 發明背景 一般，在半導體之製程或應用半導體之平板顯示基板（例 如LCD、PDP)之製程中含有複數熱處理製程。舉例言之，在 薄膜沉積製程、活化製程或決定化製程中，含有作為單位製 程之熱處理製程。薄膜形成之代表方法有化學氣相沉積 (CVD : Chemical Vapour Deposition)，此為使氣相之化合物 在已加熱之母材表面反應後，於母材表面沉積生成物之方 法。特別是在生產半導體或應用半導體之平板顯示基板等製 程中為非常重要之單位製程。 第1圖係有關化學氣相沉積裝置者，更詳而言之為顯示用 以將矽薄膜蒸鍍於半導體基板之半導體製造裝置之立體 圖，特別是顯示用以處理複數基板之批次（batch)方式之製程 裝置者。薄膜之細微構造與成長結果依成長界面上之核生成 過程與表面之擴散來決定，因基板溫度、反應器之壓力、氣 5 S ) 1334159 體之製造，而受到影響，且因熱處理及後續製程，引起細微 構造之變化，同時，其變化對薄膜之特性造成直接之影響。 因此’半導體之製造裝置大略分類，由提供製程用工間之反 應室1、在此反應室1内製造熱處理環境之加熱器裝置2、用 以提供作為薄膜之材料之氣相之來源氣體之氣體提供置（圖 中未示）構成。然後，在CVD中，由於經常使用腐蝕性、有毒 性氣體’故包含有增加具有冷阱或洗氣器等之氣體排出裝 置’以維持製程之清淨度之移送裝置。另一方面，為將用以 搭載多量之半導體基板1〇〇之批式晶舟3投入反應室1，而需 升降裝置4，為將半導體基板載置於晶舟3或將之卸載，而於 站與晶舟3間配設作為移送裝置之末端效應器5。 另—方面，加熱裝置2為因應製程之迅速性或在沉積裝置 經由一個反應室，連續進行其他之熱處理製程，而可應用 RTP(Rapid Thermal Processing)用之加熱裝置。此種加熱裝置 使用石墨（Graphite)、坎氏合金(Kanthal)或陶瓷作為發熱電阻 體’因其形狀之特徵，而不易構成如電加熱器般之線圈狀， 故在批次式製程用空間之反應室圓周上分割，沿上下長向設 置棒狀之加熱器單元6。 然而，有以下之問題點’即，經由此種RTp用加熱器單 元6 ’控制溫度不方便，特別是在反應室提供之所有製程用 空間，不易製造均一之溫度分佈。舉例言之，在前述批式之 沉積裝置中’來源氣體之熱分解溫度、半導體基板之溫度係 對成膜速度或粒子之生成速度造成最強烈影響之因子，由於 對生成物之製成或細微組織亦造成支配性之影響，故必須更 S ) 6 1334159 之加熱器單元為同一組，而共有一個電壓施加線路及溫度調 節裝置。在圖式顯示之例中顯示3組加熱器單元形成1組加熱 器群組，且形成3個加熱用區域ΤΙ、T2、T3，3組加熱器群組 形成全體之加熱裝置，本發明不以此為限，只要根據製程空 間全體之量、加熱器單元之發熱量及大小，實驗性決定加熱 器群組及該等之配置即可。 另一方面，加熱器單元12為使電壓施加線路與接地線路 避開發熱區域，而形成U字形，在U字形之加熱器單元中，其 水平部可構成使發熱量更增加之追加加熱部20。 藉由本發明，1個加熱器群組可具有不同之加熱用區域， 且可經由溫度調節裝置，分別對各加熱用區域控制溫度。舉 例言之，如前述，可使熱集中於批式反應室上部，假設將加 熱溫度調節成在加熱區域為T1CT2CT3時，從用以形成反應 室之加熱溫度之基準發熱溫度將加熱器單元H1之溫度降 溫，將加熱器單元H3’升溫，可將T3區域之溫度加溫成較T1 區域高。藉此，可使反應室全體之製程用空間形成均一之溫 度梯度。 然後，此種反應室之溫度控制可以控制器單元進行。為 此，於加熱區域設置溫度感測器，將此溫度感測器作為檢測 機構而連結於控制器單元之輸入端，於控制器單元設置以反 應室之設定溫度進行反饋，使各加熱區域之溫度均一化之溫 度調節模式，同時，於含有此調節模式之控制器單元之輸出 端連接各加熱器單元之溫度調節裝置，藉此，進行溫度控 制。若要進行此種反饋，需先形成適當之溫度設定範圍，配 11 ( S ) 1334159 5.. .末端效應器 6.. .加熱器單元 10.. .溫度調節裝置 12.. .加熱器單元 14.. .加熱器 16.. .加熱器群組 18.. .加熱裝置 20.. .追加加熱部 100…半導體基板 T1...加熱用區域 T2...加熱用區域 T3...加熱用區域 H1...加熱器單元 H2...加熱器單元 H3...加熱器單元 加熱器單元 H2’…加熱器單元 H3’..·加熱器單元1334159 IX. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION C FIELD OF THE INVENTION The present invention relates to a heating chamber for forming different heating zones in the upper and lower regions of a process chamber in a batch reaction chamber using a heater for RTP. By setting the temperature, the temperature control of the reaction chamber can be easily performed, in particular, the heating device of the batch reaction chamber and the method thereof for achieving a uniform temperature distribution in the reaction chamber. C. Prior Art 3 Background of the Invention Generally, a plurality of heat treatment processes are included in a process of semiconductor manufacturing or a flat panel display substrate (e.g., LCD, PDP) using a semiconductor. For example, in a thin film deposition process, an activation process, or a determinant process, a heat treatment process as a unit process is included. A representative method of film formation is chemical vapor deposition (CVD: Chemical Vapour Deposition), which is a method of depositing a product on the surface of a base material after reacting a compound of a gas phase on the surface of a heated base material. In particular, it is a very important unit process in processes such as the production of flat panel display substrates for semiconductors or semiconductor applications. 1 is a perspective view of a chemical vapor deposition apparatus, more specifically a semiconductor manufacturing apparatus for vapor-depositing a tantalum film on a semiconductor substrate, and particularly showing a batch for processing a plurality of substrates. The process of the device. The fine structure and growth results of the film are determined by the nucleation process and surface diffusion at the growth interface, which are affected by the substrate temperature, the pressure of the reactor, and the manufacture of the gas 5 S ) 1334159, and are affected by heat treatment and subsequent processes. , causing changes in the fine structure, and at the same time, its changes have a direct impact on the properties of the film. Therefore, the semiconductor manufacturing apparatus is roughly classified, and is provided by a reaction chamber for providing a process chamber, a heater device 2 for manufacturing a heat treatment environment in the reaction chamber 1, and a gas for supplying a gas source as a gas phase of a film. It is composed of (not shown). Then, in the CVD, since a corrosive or toxic gas is often used, a transfer device that increases a gas discharge device having a cold trap or a scrubber to maintain the cleanness of the process is included. On the other hand, in order to put the batch type wafer boat 3 for mounting a large amount of the semiconductor substrate 1 into the reaction chamber 1, the lifting device 4 is required to mount the semiconductor substrate on the wafer boat 3 or unload it. An end effector 5 is provided as a transfer device between the station and the boat 3. On the other hand, the heating device 2 can apply a heating device for RTP (Rapid Thermal Processing) in response to the rapidity of the process or other heat treatment processes in which the deposition device is continuously passed through a reaction chamber. Such a heating device uses graphite (Graphite), Kanthal (Kanthal) or ceramic as a heating resistor. Because of its shape, it is not easy to form a coil like an electric heater, so it is used in a batch process space. The reaction chamber is divided on the circumference, and a rod-shaped heater unit 6 is disposed along the upper and lower sides. However, there is a problem that the temperature is inconvenient to control the heater unit 6' via such RTp, particularly in all the process spaces provided in the reaction chamber, and it is difficult to produce a uniform temperature distribution. For example, in the foregoing deposition apparatus of the batch type, the factor of the thermal decomposition temperature of the source gas, the temperature of the semiconductor substrate, the film formation rate, or the rate of formation of the particles are the most strongly affected, due to the formation or subtleness of the product. The organization also has the influence of dominance. Therefore, the heater units of S 1 6 1334159 must be the same group, and there is a voltage application line and temperature adjustment device. In the example shown in the figure, three sets of heater units are formed to form one set of heater groups, and three heating zones ΤΙ, T2, T3 are formed, and three sets of heater groups form the entire heating device, and the present invention does not For this reason, it is only necessary to experimentally determine the heater group and the configuration according to the total amount of the process space and the amount of heat generated and the size of the heater unit. On the other hand, the heater unit 12 forms a U-shape so that the voltage application line and the ground line avoid the development hot zone, and in the U-shaped heater unit, the horizontal portion can constitute the additional heating portion 20 for increasing the amount of heat generation. . According to the present invention, one heater group can have different heating zones, and the temperature can be individually controlled for each heating zone via a temperature adjustment device. For example, as described above, heat may be concentrated in the upper portion of the batch reaction chamber, and it is assumed that the heating temperature is adjusted so that when the heating region is T1CT2CT3, the heater unit H1 is heated from the reference heating temperature for forming the heating temperature of the reaction chamber. When the temperature is lowered, the heater unit H3' is heated up to warm the temperature in the T3 region to be higher than the T1 region. Thereby, a uniform temperature gradient can be formed in the process space of the entire reaction chamber. The temperature control of such a reaction chamber can then be carried out by the controller unit. To this end, a temperature sensor is disposed in the heating region, and the temperature sensor is connected as a detecting mechanism to the input end of the controller unit, and the controller unit is provided with feedback at a set temperature of the reaction chamber to make each heating region The temperature is uniformized in the temperature adjustment mode, and at the same time, the temperature adjustment device of each heater unit is connected to the output end of the controller unit including the adjustment mode, thereby performing temperature control. To make such feedback, it is necessary to first form an appropriate temperature setting range, with 11 (S) 1334159 5.. End effector 6... Heater unit 10.. Temperature regulating device 12... Heater unit 14.. Heater 16.. Heater group 18.. Heating device 20.. Additional heating unit 100... Semiconductor substrate T1... Heating area T2... Heating area T3... Heating Use zone H1...heater unit H2...heater unit H3...heater unit heater unit H2'...heater unit H3'..·heater unit
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