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TWI505332B - Heat treatment method and heat treatment device - Google Patents

Heat treatment method and heat treatment device Download PDF

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Publication number
TWI505332B
TWI505332B TW102110982A TW102110982A TWI505332B TW I505332 B TWI505332 B TW I505332B TW 102110982 A TW102110982 A TW 102110982A TW 102110982 A TW102110982 A TW 102110982A TW I505332 B TWI505332 B TW I505332B
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processed
heat treatment
flash
light
resin
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TW102110982A
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TW201403678A (en
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木村貴弘
渉田浩二
鍬田豐
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斯克林集團公司
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    • H10P95/90
    • H10P34/42
    • H10P72/0436

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  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

熱處理方法及熱處理裝置Heat treatment method and heat treatment device

本發明係關於一種藉由對包含樹脂作為基材或接著劑之被處理體照射光而將該被處理體加熱的熱處理方法及熱處理裝置。The present invention relates to a heat treatment method and a heat treatment apparatus for heating a target object by irradiating light to a target object containing a resin as a substrate or an adhesive.

於半導體元件之製造製程中,雜質導入係用以於半導體晶圓內形成pn接面之必需步驟。目前,雜質導入一般係藉由離子注入法及其後之退火法完成。離子注入法係使硼(B)、砷(As)、磷(P)等雜質(摻雜劑)之元素離子化,並於高加速電壓下使其撞擊半導體晶圓,從而物理性地進行雜質注入之技術。經注入之雜質藉由退火處理而活化。In the manufacturing process of a semiconductor device, impurity introduction is a necessary step for forming a pn junction in a semiconductor wafer. At present, the introduction of impurities is generally completed by an ion implantation method and an annealing method thereafter. The ion implantation method ionizes elements such as boron (B), arsenic (As), and phosphorus (P), and impinges on the semiconductor wafer at a high acceleration voltage, thereby physically performing impurities. Injection technology. The implanted impurities are activated by annealing treatment.

近年來,隨著半導體元件之微細化之進一步發展,要求更淺之接合,且在嘗試藉由閃光燈退火(FLA,Flash Lamp Annealing)以極短之時間加熱雜質,抑制擴散並使其活化的技術。但是,於閃光燈退火中,由於照射時間極短,且照射強度較強之閃光,故而存在晶圓破裂或難以獲得均勻之溫度分佈的問題。In recent years, with the further development of the miniaturization of semiconductor elements, a shallower bonding has been demanded, and attempts have been made to heat the impurities in a very short time by flash lamp annealing (FLA) to suppress diffusion and activate them. . However, in the flash lamp annealing, since the irradiation time is extremely short and the irradiation intensity is strong, there is a problem that the wafer is broken or it is difficult to obtain a uniform temperature distribution.

因此,專利文獻1、2中揭示有於閃光燈與晶圓之間設置透過率經調整之板狀構件,且對自閃光燈照射之閃光的一部分或全部進行減光的技術。Therefore, Patent Documents 1 and 2 disclose a technique of providing a plate-like member whose transmittance is adjusted between a flash lamp and a wafer, and dimming a part or all of the flash from the flash.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本專利特開2009-123807號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-123807

[專利文獻2]日本專利特開2009-260061號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-260061

另一方面,近年來,以電子紙等為代表之較薄且軟性之電子機器受到關注。於此種軟性電子機器之製造步驟中,於樹脂等基材之表面積層有電極等功能層的被處理體的退火處理亦成為必需。On the other hand, in recent years, thinner and softer electronic devices typified by electronic paper and the like have attracted attention. In the manufacturing process of such a flexible electronic device, annealing treatment of a target object having a functional layer such as an electrode on a surface layer of a substrate such as a resin is also required.

先前,以樹脂作為基材之被處理體的退火處理一般係藉由較低溫度之烘箱進行數小時。與矽或玻璃之基板相比較,由於樹脂之耐熱性明顯較低,故而必需將烘箱之溫度設定為較低之溫度。Previously, the annealing treatment of the object to be treated with the resin as a substrate was generally carried out in an oven at a lower temperature for several hours. Since the heat resistance of the resin is remarkably lower than that of the substrate of ruthenium or glass, it is necessary to set the temperature of the oven to a lower temperature.

但是,根據近年來急速發展之軟性電子機器之種類,有時必需將功能層加熱至樹脂之耐熱溫度之極限以上。又,根據功能層之種類,亦存在若未將退火時間與上述半導體晶圓之熱處理同樣地設定為更短之時間則無法獲得所需之特性的情形。進而,若退火時間需要數小時,則亦存在生產性必然降低之問題。However, depending on the type of soft electronic equipment that has been rapidly developed in recent years, it is sometimes necessary to heat the functional layer to the limit of the heat-resistant temperature of the resin. Further, depending on the type of the functional layer, if the annealing time is not set to be shorter than the heat treatment of the semiconductor wafer, the desired characteristics may not be obtained. Further, if the annealing time takes several hours, there is also a problem that productivity is inevitably lowered.

為了解決該等課題而考慮到亦對以樹脂作為基材之被處理體應用上述閃光燈退火。若應用閃光燈退火,則退火時間極短,且亦可選擇性地僅將被處理體表層之功能層加熱。In order to solve such problems, it is considered that the flash lamp annealing is also applied to a target object using a resin as a substrate. If flash annealing is applied, the annealing time is extremely short, and it is also possible to selectively heat only the functional layer of the surface layer of the object to be treated.

然而,一般而言,樹脂材料具有由於紫外線之照射而容易發生劣化之性質。並且,氙氣閃光燈之放射分光分佈係自紫外區域至近紅外區域,較鹵素燈等而向短波長側移動。因此,產生了樹脂基材由於閃光燈之光照射而損傷的新問題。However, in general, a resin material has a property of being easily deteriorated by irradiation of ultraviolet rays. Further, the emission spectrum of the xenon flash lamp is shifted from the ultraviolet region to the near-infrared region toward the short wavelength side from a halogen lamp or the like. Therefore, a new problem that the resin substrate is damaged by the light irradiation of the flash lamp is generated.

本發明係鑒於上述課題而完成者,其目的在於提供一種可在不損傷被處理體中所包含之樹脂的情況下,對被處理體進行光照射加熱的熱處理方法及熱處理裝置。The present invention has been made in view of the above-described problems, and an object of the invention is to provide a heat treatment method and a heat treatment apparatus capable of performing light irradiation and heating on a target object without damaging the resin contained in the object to be processed.

為了解決上述課題,技術方案1之發明係藉由對包含樹脂之被處理體照射光而將該被處理體加熱的熱處理方法,其特徵在於:對上述被處理體照射從自光源射出之光中截斷會損傷上述樹脂之波長區域後的光。In order to solve the problem, the invention of claim 1 is a heat treatment method for heating a target object by irradiating light to a target object including a resin, wherein the object to be processed is irradiated with light emitted from a light source. The light that cuts off the wavelength region of the above resin is cut off.

又,技術方案2之發明係如技術方案1之發明的熱處理方法,其中從自上述光源射出之光中截斷波長400nm以下之紫外光。Further, the invention of claim 2 is the heat treatment method according to the invention of claim 1, wherein the ultraviolet light having a wavelength of 400 nm or less is cut off from the light emitted from the light source.

又,技術方案3之發明係如技術方案2之發明的熱處理方法,其中藉由使自上述光源射出之光透過濾光片而截斷波長400nm以下之紫外光。Further, the invention of claim 3 is the heat treatment method according to the invention of claim 2, wherein the ultraviolet light having a wavelength of 400 nm or less is cut by passing the light emitted from the light source through the filter.

又,技術方案4之發明係如技術方案1至3中任一項之發明的熱處理方法,其中上述被處理體包含樹脂基材。The invention is the heat treatment method according to any one of the first to third aspects, wherein the object to be processed comprises a resin substrate.

又,技術方案5之發明係如技術方案1至3中任一項之發明的熱處理方法,其中上述被處理體包含以樹脂之接著劑貼設有基材之構造。In the heat treatment method according to any one of the first to third aspects of the invention, the object to be processed includes a structure in which a substrate is attached with a resin adhesive.

又,技術方案6之發明係藉由對包含樹脂之被處理體照射光而將該被處理體加熱的熱處理裝置,其特徵在於包括:保持機構,其保持上述被處理體;光源,其對保持於上述保持機構上的上述被處理體照射光;及濾光片,其設置於上述保持機構與上述光源之間,且截斷會損傷上述樹脂之波長區域。Further, the invention of claim 6 is a heat treatment apparatus for heating the object to be processed by irradiating light to the object to be processed containing the resin, characterized by comprising: a holding mechanism that holds the object to be processed; and a light source that is held by the object The object to be processed on the holding means irradiates light; and the filter is disposed between the holding means and the light source, and is cut off to damage the wavelength region of the resin.

又,技術方案7之發明係如技術方案6之發明的熱處理裝置,其中上述濾光片截斷波長400nm以下之紫外光。Further, the invention of claim 7 is the heat treatment apparatus according to the invention of claim 6, wherein the filter cuts ultraviolet light having a wavelength of 400 nm or less.

又,技術方案8之發明係如技術方案6之發明的熱處理裝置,其中上述濾光片包含封入有經著色之水的板狀構件。The invention of claim 8 is the heat treatment apparatus according to the invention of claim 6, wherein the filter comprises a plate-like member in which colored water is sealed.

又,技術方案9之發明係如技術方案6之發明的熱處理裝置,其中上述光源包含照射閃光之閃光燈。Further, the invention of claim 9 is the heat treatment apparatus of the invention of claim 6, wherein the light source comprises a flash lamp that illuminates the flash.

又,技術方案10之發明係如技術方案6至9中任一項之發明的熱處理裝置,其中上述被處理體包含樹脂基材。The heat treatment device according to any one of claims 6 to 9, wherein the object to be processed comprises a resin substrate.

又,技術方案11之發明係如技術方案6至9中任一項之發明的熱處理裝置,其中上述被處理體包含以樹脂之接著劑貼設有基材之構造。The invention according to any one of claims 6 to 9, wherein the object to be processed comprises a structure in which a substrate is attached with a resin adhesive.

根據技術方案1至5之發明,由於對被處理體照射從自光源射出之光中截斷會損傷樹脂之波長區域後的光,故而可抑制該波長區域之光被樹脂吸收,可在不損傷被處理體中所包含之樹脂的情況下,對被處理體進行光照射加熱。According to the inventions of the first aspect of the invention, since the light emitted from the light source is cut off from the light emitted from the light source, the light in the wavelength region of the resin is damaged, so that the light in the wavelength region can be suppressed from being absorbed by the resin, and the light can be prevented from being damaged. In the case of treating the resin contained in the body, the object to be processed is subjected to light irradiation and heating.

根據技術方案6至11之發明,由於在保持機構與光源之間設置截斷會損傷樹脂之波長區域的濾光片,故而已截斷該波長區域的光被照射至被處理體,可在不損傷被處理體中所包含之樹脂的情況下,對被處理體進行光照射加熱。According to the inventions of the sixth aspect of the invention, since the filter which cuts the wavelength region of the resin is cut between the holding mechanism and the light source, the light having the wavelength region cut off is irradiated to the object to be processed, and the object can be damaged without being damaged. In the case of treating the resin contained in the body, the object to be processed is subjected to light irradiation and heating.

1‧‧‧熱處理裝置1‧‧‧ Heat treatment unit

8‧‧‧被處理體8‧‧‧Processed body

9‧‧‧控制部9‧‧‧Control Department

10‧‧‧腔室10‧‧‧ chamber

11‧‧‧腔室側壁11‧‧‧Cell wall

12‧‧‧腔室底部12‧‧‧Bottom of the chamber

15‧‧‧熱處理空間15‧‧‧ Heat treatment space

18‧‧‧腔室窗18‧‧‧Case window

20‧‧‧保持板20‧‧‧ Keep board

21‧‧‧加熱器21‧‧‧ heater

30‧‧‧加熱光源30‧‧‧heating light source

32‧‧‧反射器32‧‧‧ reflector

40‧‧‧氣體供給機構40‧‧‧ gas supply mechanism

41‧‧‧處理氣體供給源41‧‧‧Processing gas supply

42‧‧‧供給配管42‧‧‧Supply piping

43‧‧‧供給閥門43‧‧‧Supply valve

50‧‧‧排氣機構50‧‧‧Exhaust mechanism

51‧‧‧排氣裝置51‧‧‧Exhaust device

52‧‧‧排氣配管52‧‧‧Exhaust piping

53‧‧‧排氣閥門53‧‧‧Exhaust valve

60‧‧‧光學濾光片60‧‧‧Optical filter

61‧‧‧構件61‧‧‧ components

62‧‧‧水62‧‧‧ water

81‧‧‧基材81‧‧‧Substrate

82‧‧‧功能層82‧‧‧ functional layer

83‧‧‧玻璃基板83‧‧‧ glass substrate

84‧‧‧接著劑84‧‧‧Adhesive

FL‧‧‧閃光燈FL‧‧‧Flash

圖1係表示本發明之熱處理裝置之主要部分的構成之圖。Fig. 1 is a view showing the configuration of a main part of a heat treatment apparatus of the present invention.

圖2係表示圖1之熱處理裝置中之被處理體之處理程序的流程圖。Fig. 2 is a flow chart showing the processing procedure of the object to be processed in the heat treatment apparatus of Fig. 1.

圖3係表示被處理體之構造的剖面圖。Fig. 3 is a cross-sectional view showing the structure of the object to be processed.

圖4係表示被處理體之功能層的溫度變化之圖。Fig. 4 is a view showing changes in temperature of a functional layer of a target object.

圖5係表示氙氣閃光燈之放射分光分佈之圖。Fig. 5 is a view showing the radiation splitting distribution of a xenon flash lamp.

圖6係表示被處理體之構造之其他例之圖。Fig. 6 is a view showing another example of the structure of the object to be processed.

圖7係表示使用水之光學濾光片的構造之圖。Fig. 7 is a view showing the configuration of an optical filter using water.

圖8係表示閃光燈之排列之其他例之圖。Fig. 8 is a view showing another example of the arrangement of the flash lamps.

以下,參照圖式對本發明之實施形態進行詳細地說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

圖1係表示本發明之熱處理裝置1之主要部分的構成之圖。該熱處理裝置1係藉由對以樹脂作為基材之被處理體8照射光而將該被處理體8加熱的裝置。作為主要元件,熱處理裝置1包含:腔室10,其收容 被處理體8;保持板20,其保持被處理體8;加熱光源30,其對被處理體8照射閃光;及光學濾光片60。又,熱處理裝置1包含控制部9,該控制部9控制設置於裝置中的各種動作機構並使其進行處理。再者,於圖1及之後的各圖中,為了容易理解,視需要對各部分之尺寸及數量進行誇張或簡化地描述。Fig. 1 is a view showing the configuration of a main part of a heat treatment apparatus 1 of the present invention. In the heat treatment apparatus 1, the object to be processed 8 is heated by irradiating light to the object 8 to be processed with the resin as a base material. As a main component, the heat treatment apparatus 1 includes a chamber 10 that houses The object to be processed 8; a holding plate 20 that holds the object to be processed 8; a heating source 30 that illuminates the object to be processed 8; and an optical filter 60. Further, the heat treatment apparatus 1 includes a control unit 9 that controls and processes various operation mechanisms provided in the apparatus. Furthermore, in the drawings of Fig. 1 and subsequent figures, the size and number of each part are exaggerated or simplified as needed for easy understanding.

腔室10係設置於加熱光源30之下方,且包含腔室側壁11及腔室底部12。腔室底部12覆蓋腔室側壁11之下部。將由腔室側壁11及腔室底部12所包圍之空間規定為熱處理空間15。又,於腔室10之上部開口安裝有腔室窗18而得以閉合。The chamber 10 is disposed below the heating source 30 and includes a chamber sidewall 11 and a chamber bottom 12. The chamber bottom 12 covers the lower portion of the chamber sidewall 11. The space surrounded by the chamber side wall 11 and the chamber bottom portion 12 is defined as the heat treatment space 15. Further, a chamber window 18 is attached to the upper portion of the chamber 10 to be closed.

構成腔室10之頂棚部的腔室窗18係由石英形成之板狀構件,且作為使自加熱光源30照射之光透過熱處理空間15的石英窗而發揮功能。構成腔室10之本體的腔室側壁11及腔室底部12例如由不鏽鋼等強度及耐熱性優異的金屬材料形成。The chamber window 18 constituting the ceiling portion of the chamber 10 is a plate-like member formed of quartz, and functions as a quartz window that transmits light irradiated from the heating source 30 through the heat treatment space 15. The chamber side wall 11 and the chamber bottom portion 12 constituting the body of the chamber 10 are formed of, for example, a metal material excellent in strength and heat resistance such as stainless steel.

又,為了維持熱處理空間15之氣密性,腔室窗18與腔室側壁11係藉由圖示省略之O形環而密封。即,於腔室窗18之下表面周圍部與腔室側壁11之間夾入O形環,防止氣體自該等間隙流入流出。Further, in order to maintain the airtightness of the heat treatment space 15, the chamber window 18 and the chamber side wall 11 are sealed by an O-ring (not shown). That is, an O-ring is interposed between the peripheral portion of the lower surface of the chamber window 18 and the chamber side wall 11 to prevent gas from flowing in and out from the gaps.

於腔室10之內部設置有保持板20。保持板20係金屬製(例如鋁製)之平坦之板狀構件。保持板20係於腔室10內載置被處理體8並保持水平狀態。又,保持板20中內置有加熱器21。加熱器21係由鎳鉻合金線等電阻加熱線構成,接收來自圖外之電力供給源的電力供給而發熱,從而加熱保持板20。再者,於保持板20中,除加熱器21之外,亦可設置水冷管等冷卻機構。A retaining plate 20 is disposed inside the chamber 10. The holding plate 20 is a flat plate-shaped member made of metal (for example, made of aluminum). The holding plate 20 is placed in the chamber 10 to be placed on the object to be processed 8 and maintained in a horizontal state. Further, a heater 21 is built in the holding plate 20. The heater 21 is composed of a resistance heating wire such as a nichrome wire, and receives heat from a power supply source outside the drawing to generate heat, thereby heating the holding plate 20. Further, in the holding plate 20, in addition to the heater 21, a cooling mechanism such as a water-cooling tube may be provided.

保持板20中設置有使用熱電偶而構成之圖示省略之溫度感測器。溫度感測器對保持板20之上表面附近的溫度進行測定,並將該測定結果傳送至控制部9。控制部9根據溫度感測器之測定結果,控制加熱器21之輸出,且將保持板20設定為特定之溫度。保持於保持板20上 之被處理體8藉由保持板20而被加熱至特定之溫度。The holding plate 20 is provided with a temperature sensor which is omitted from the illustration using a thermocouple. The temperature sensor measures the temperature in the vicinity of the upper surface of the holding plate 20, and transmits the measurement result to the control portion 9. The control unit 9 controls the output of the heater 21 based on the measurement result of the temperature sensor, and sets the holding plate 20 to a specific temperature. Retained on the retaining plate 20 The object to be processed 8 is heated to a specific temperature by the holding plate 20.

又,熱處理裝置1包含:氣體供給機構40,其對腔室10內之熱處理空間15供給處理氣體;及排氣機構50,其自熱處理空間15進行環境之排氣。氣體供給機構40包括處理氣體供給源41、供給配管42、及供給閥門43。供給配管42之前端側係與腔室10內之熱處理空間15連通連接,基端側係與處理氣體供給源41連接。於供給配管42之路徑中途設置供給閥門43。藉由開放供給閥門43,可自處理氣體供給源41向熱處理空間15供給處理氣體。處理氣體供給源41可根據被處理體8之種類及處理目的供給適當之處理氣體,本實施形態中係供給氮氣(N2 )。Further, the heat treatment apparatus 1 includes a gas supply mechanism 40 that supplies a processing gas to the heat treatment space 15 in the chamber 10, and an exhaust mechanism 50 that exhausts the environment from the heat treatment space 15. The gas supply mechanism 40 includes a processing gas supply source 41, a supply pipe 42, and a supply valve 43. The front end side of the supply pipe 42 is connected in communication with the heat treatment space 15 in the chamber 10, and the base end side is connected to the processing gas supply source 41. The supply valve 43 is provided in the middle of the path of the supply pipe 42. By opening the supply valve 43, the processing gas can be supplied from the processing gas supply source 41 to the heat treatment space 15. The processing gas supply source 41 can supply an appropriate processing gas in accordance with the type of the object to be processed 8 and the purpose of processing, and in the present embodiment, nitrogen gas (N 2 ) is supplied.

排氣機構50包括排氣裝置51、排氣配管52、及排氣閥門53。排氣配管之前端側係與腔室10內之熱處理空間15連通連接,基端側係與排氣裝置51連接。於排氣配管52之路徑中途設置排氣閥門53。作為排氣裝置51,可使用設置有真空泵及熱處理裝置1之工廠之排氣實體。藉由使排氣裝置51工作並開放排氣閥門53,可將熱處理空間15之環境排出至裝置外。藉由該等氣體供給機構40及排氣機構50,可調整熱處理空間15之環境。The exhaust mechanism 50 includes an exhaust device 51, an exhaust pipe 52, and an exhaust valve 53. The front end side of the exhaust pipe is connected in communication with the heat treatment space 15 in the chamber 10, and the base end side is connected to the exhaust device 51. An exhaust valve 53 is provided in the middle of the path of the exhaust pipe 52. As the exhaust device 51, an exhaust body of a factory provided with a vacuum pump and a heat treatment device 1 can be used. By operating the exhaust device 51 and opening the exhaust valve 53, the environment of the heat treatment space 15 can be discharged to the outside of the device. The environment of the heat treatment space 15 can be adjusted by the gas supply mechanism 40 and the exhaust mechanism 50.

加熱光源30設置於腔室10之上方。加熱光源30包含複數個(圖1中為了方便圖示而設定為11個,但並不限定於此)閃光燈FL、及以覆蓋該等全體之上方的方式而設置的反射器32而構成。加熱光源30經由下述光學濾光片60及石英之腔室窗18,自閃光燈FL對在腔室10內保持於保持板20上之被處理體8照射閃光。The heating light source 30 is disposed above the chamber 10. The heating light source 30 includes a plurality of (11, but not limited to, FIG. 1 for convenience of illustration) flash lamps FL and a reflector 32 provided to cover the entire upper portion. The heating light source 30 illuminates the object to be processed 8 held in the holding plate 20 in the chamber 10 from the flash lamp FL via the optical filter 60 and the quartz chamber window 18 described below.

複數個閃光燈FL係各自具有長條之圓筒形狀的棒狀燈,且以各自之長度方向沿水平方向成為相互平行之方式排列成平面狀。本實施形態中係使用氙氣閃光燈作為閃光燈FL。氙氣閃光燈FL包含:棒狀之玻璃管(放電管),其內部封入有氙氣,且於其兩端部配設有連接於電容器之陽極及陰極;及觸發電極,其附設於該玻璃管之外周面上。 由於氙氣在電性上為絕緣體,故而即便於電容器中累積有電荷,於通常之狀態下玻璃管內亦無電流動。然而,於對觸發電極施加高電壓而破壞絕緣之情形時,累積於電容器中之電藉由兩端電極間之放電而瞬間於玻璃管內流動,藉由此時之氙原子或分子之激發而發射光。於此種氙氣閃光燈FL中,由於預先累積於電容器中之靜電能轉換為0.1毫秒~100毫秒之極短之光脈衝,故而與連續點亮之燈相比具有可照射極強之光的特徵。The plurality of flash lamps FL each have a long cylindrical rod-shaped lamp, and are arranged in a planar shape so that their respective longitudinal directions are parallel to each other in the horizontal direction. In the present embodiment, a xenon flash lamp is used as the flash lamp FL. The xenon flash lamp FL includes: a rod-shaped glass tube (discharge tube) having a helium gas sealed therein, and an anode and a cathode connected to the capacitor at both ends thereof; and a trigger electrode attached to the outer circumference of the glass tube On the surface. Since helium is electrically an insulator, even if a charge is accumulated in the capacitor, there is no current flowing in the glass tube in the normal state. However, when a high voltage is applied to the trigger electrode to break the insulation, the electric charge accumulated in the capacitor instantaneously flows in the glass tube by the discharge between the electrodes at both ends, by the excitation of the atom or molecule at that time. Emitting light. In such a xenon flash lamp FL, since the electrostatic energy accumulated in the capacitor in advance is converted into an extremely short light pulse of 0.1 millisecond to 100 milliseconds, it is characterized in that it can illuminate extremely strong light as compared with a continuously lit lamp.

又,反射器32係以於複數個閃光燈FL之上方覆蓋其等全體之方式而設置。反射器32之基本功能係將自複數個閃光燈FL射出之閃光反射至熱處理空間15之側。Further, the reflector 32 is provided so as to cover the entirety of the plurality of flashers FL. The basic function of the reflector 32 is to reflect the flash emitted from the plurality of flashes FL to the side of the heat treatment space 15.

於腔室10之腔室窗18與加熱光源30之間配設有光學濾光片60。本實施形態之光學濾光片60係使鋇(Ba)、砷(As)、銻(Sb)、鎘(Cd)等金屬溶解於石英玻璃中而形成之板狀之光學構件。更詳細而言,使選自由鋇、砷、銻、鎘所組成之群中至少一種以上的金屬溶解並包含於石英玻璃中。藉由使石英玻璃中含有金屬成分,可將透過光學濾光片60之光中的特定之波長區域之光反射或吸收而將其截斷(遮光)。被截斷之波長區域係取決於溶解在石英玻璃中之金屬的種類。本實施形態之光學濾光片60係截斷波長400nm以下之紫外光。An optical filter 60 is disposed between the chamber window 18 of the chamber 10 and the heating source 30. The optical filter 60 of the present embodiment is a plate-shaped optical member formed by dissolving a metal such as barium (Ba), arsenic (As), antimony (Sb) or cadmium (Cd) in quartz glass. More specifically, at least one metal selected from the group consisting of ruthenium, arsenic, antimony, and cadmium is dissolved and contained in quartz glass. By including a metal component in the quartz glass, light in a specific wavelength region of the light transmitted through the optical filter 60 can be reflected or absorbed to be cut off (shielded). The wavelength region that is truncated depends on the type of metal dissolved in the quartz glass. The optical filter 60 of the present embodiment cuts ultraviolet light having a wavelength of 400 nm or less.

藉由在腔室10與加熱光源30之間設置光學濾光片60,可於自閃光燈FL射出之閃光透過光學濾光片60時,截斷波長400nm以下之紫外光。並且,剩餘之具有波長400nm以上之波長區域之成分的閃光係透過光學濾光片60而照射至保持於保持板20上之被處理體8。By providing the optical filter 60 between the chamber 10 and the heating light source 30, the ultraviolet light having a wavelength of 400 nm or less can be cut off when the flash emitted from the flash lamp FL is transmitted through the optical filter 60. Further, the remaining flash having a component having a wavelength region of a wavelength of 400 nm or more passes through the optical filter 60 and is irradiated onto the object 8 to be processed held on the holding plate 20.

控制部9對設置於熱處理裝置1上之上述各種動作機構進行控制。作為控制部9之硬體之構成係與一般之電腦相同。即,控制部9係包含如下部分而構成:CPU(Central Processing Unit,中央處理單元),其進行各種運算處理;ROM(Read-Only Memory,唯讀記憶 體),其係記憶基本程式的讀取專用的記憶體;RAM(Random Access Memory,隨機存取記憶體),其係記憶各種資訊之自由讀寫的記憶體;及磁碟,其記憶有控制用軟件或資料等。藉由控制部9之CPU實行特定之處理程式而進行熱處理裝置1中之處理。The control unit 9 controls the above various operation mechanisms provided on the heat treatment apparatus 1. The hardware of the control unit 9 is the same as that of a general computer. In other words, the control unit 9 includes a CPU (Central Processing Unit) that performs various arithmetic processing and a ROM (Read-Only Memory). Body), which is a memory dedicated to reading the basic program of memory; RAM (Random Access Memory), which is a freely readable memory for storing various information; and a disk with memory control Use software or materials. The processing in the heat treatment apparatus 1 is performed by the CPU of the control unit 9 executing a specific processing program.

除上述構成以外,熱處理裝置1中亦可適當地設置各種構成元件。例如,於腔室側壁11上設置有用以將被處理體8搬入及搬出的搬送開口部。又,為了防止由自閃光燈FL之光照射所導致的過量之溫度上升,亦可於腔室側壁11上設置水冷管。進而,為了防止由吸收閃光所導致之光學濾光片60之加熱,亦可於光學濾光片60上設置吹送冷卻氣體之機構。In addition to the above configuration, various constituent elements may be appropriately provided in the heat treatment apparatus 1. For example, a transport opening for loading and unloading the workpiece 8 is provided on the chamber side wall 11. Further, in order to prevent an excessive temperature rise caused by the light irradiation from the flash lamp FL, a water-cooling tube may be provided on the chamber side wall 11. Further, in order to prevent heating of the optical filter 60 caused by the absorption of the flash, a mechanism for blowing the cooling gas may be provided on the optical filter 60.

其次,對具有上述構成之熱處理裝置1中之被處理體8的處理程序進行說明。圖2係表示熱處理裝置1中之被處理體8之處理程序的流程圖。以下說明之熱處理裝置1之處理程序係藉由控制部9控制熱處理裝置1之各動作機構而進行。Next, a processing procedure of the object 8 to be processed in the heat treatment apparatus 1 having the above configuration will be described. FIG. 2 is a flow chart showing a processing procedure of the object to be processed 8 in the heat treatment apparatus 1. The processing procedure of the heat treatment apparatus 1 described below is performed by the control unit 9 controlling each of the operation mechanisms of the heat treatment apparatus 1.

首先,向腔室10內搬入被處理體8(步驟S1)。被處理體8之搬入可藉由熱處理裝置1外部之搬送機器人而進行,亦可手動地進行。圖3係表示被處理體8之構造的剖面圖。本實施形態之被處理體8係於樹脂基材81之上表面積層功能層82而構成。作為基材81之樹脂,可採用PEN(聚萘二甲酸乙二酯)、PET(聚對苯二甲酸乙二酯)等。又,功能層82係電極形成用之銀(Ag)的奈米油墨層。First, the object to be processed 8 is carried into the chamber 10 (step S1). The loading of the object to be processed 8 can be performed by a transfer robot outside the heat treatment apparatus 1, or can be performed manually. 3 is a cross-sectional view showing the structure of the object to be processed 8. The object to be processed 8 of the present embodiment is configured by the surface layer layer functional layer 82 on the resin substrate 81. As the resin of the substrate 81, PEN (polyethylene naphthalate), PET (polyethylene terephthalate) or the like can be used. Further, the functional layer 82 is a nano ink layer of silver (Ag) for electrode formation.

將已搬入至腔室10內之被處理體8載置於保持板20之上表面而保持(步驟S2)。被處理體8係將形成有功能層82之表面朝向上面側而保持於保持板20上。藉由內置之加熱器21將保持板20之上表面預先加熱至特定之溫度。藉由控制部9控制保持板20之上表面的溫度。被處理體8因載置於保持板20上,藉此利用熱傳導而受到加熱。The object to be processed 8 that has been carried into the chamber 10 is placed on the upper surface of the holding plate 20 and held (step S2). The object to be processed 8 holds the surface on which the functional layer 82 is formed toward the upper surface side and is held by the holding plate 20. The upper surface of the holding plate 20 is preheated to a specific temperature by a built-in heater 21. The temperature of the upper surface of the holding plate 20 is controlled by the control portion 9. The object to be processed 8 is placed on the holding plate 20, thereby being heated by heat conduction.

又,於將被處理體8搬入至腔室10內並使熱處理空間15成為密閉 空間之後,進行腔室10內之環境調整(步驟S3)。本實施形態中係自氣體供給機構40向腔室10內之熱處理空間15供給氮氣,並藉由排氣機構50進行排氣。藉此,於腔室10內形成氮氣之氣流,而將熱處理空間15置換成氮氣環境。Further, the object to be processed 8 is carried into the chamber 10, and the heat treatment space 15 is sealed. After the space, the environment adjustment in the chamber 10 is performed (step S3). In the present embodiment, nitrogen gas is supplied from the gas supply mechanism 40 to the heat treatment space 15 in the chamber 10, and is exhausted by the exhaust mechanism 50. Thereby, a gas stream of nitrogen gas is formed in the chamber 10, and the heat treatment space 15 is replaced with a nitrogen atmosphere.

圖4係表示被處理體8之功能層82的溫度變化之圖。於時刻t1時將被處理體8搬入至腔室10內,於時刻t2時將該被處理體8保持於保持板20上。藉此,於時刻t2時開始藉由保持板20對被處理體8進行預加熱(輔助加熱),於時刻t3時使被處理體8之溫度達到特定之預加熱溫度T1。於被處理體8藉由保持板20而受到加熱時,包含樹脂基材81及功能層82的被處理體8整體大致均勻地受到加熱。因此,於該預加熱階段中,基材81及功能層82均同樣地升溫至預加熱溫度T1。預加熱溫度T1適當地設定為不會對樹脂基材81造成熱損傷之範圍(若為PEN、PET則約為120℃以下)內。FIG. 4 is a view showing changes in temperature of the functional layer 82 of the object to be processed 8. At time t1, the object to be processed 8 is carried into the chamber 10, and the object to be processed 8 is held on the holding plate 20 at time t2. Thereby, the object to be processed 8 is preheated (auxiliary heating) by the holding plate 20 at time t2, and the temperature of the object to be processed 8 is brought to a specific preheating temperature T1 at time t3. When the object to be processed 8 is heated by the holding plate 20, the entire object to be processed 8 including the resin base material 81 and the functional layer 82 is heated substantially uniformly. Therefore, in the preheating stage, both the base material 81 and the functional layer 82 are similarly heated to the preheating temperature T1. The preheating temperature T1 is appropriately set within a range that does not cause thermal damage to the resin substrate 81 (about 120 ° C or less for PEN or PET).

繼而,於被處理體8之溫度達到預加熱溫度T1之後,藉由控制部9之控制,於時刻t4時一齊點亮加熱光源30之複數個閃光燈FL(步驟S4)。自閃光燈FL射出之閃光(包含藉由反射器32而反射之閃光)射向在熱處理空間15中保持於保持板20上的被處理體8。Then, after the temperature of the object to be processed 8 reaches the preheating temperature T1, the plurality of flash lamps FL of the heating light source 30 are collectively lit at time t4 by the control of the control unit 9 (step S4). The flash emitted from the flash lamp FL (including the flash reflected by the reflector 32) is directed to the object 8 to be processed held on the holding plate 20 in the heat treatment space 15.

此時,自閃光燈FL射出之閃光於透過光學濾光片60之後,入射至熱處理空間15。本實施形態中,由於截斷波長400nm以下之紫外光的光學濾光片60設置於加熱光源30與腔室窗18之間,故而於閃光透過光學濾光片60時,400nm以下之波長區域之紫外光被截斷。其結果為,截斷波長400nm以下之紫外光後的閃光入射至腔室10內之熱處理空間15中。並且,截斷紫外光後的閃光被照射至保持於保持板20上之被處理體8之表面,從而,形成於該表面之功能層82受到加熱。At this time, the flash emitted from the flash lamp FL is incident on the heat treatment space 15 after passing through the optical filter 60. In the present embodiment, since the optical filter 60 that cuts ultraviolet light having a wavelength of 400 nm or less is disposed between the heating light source 30 and the chamber window 18, when the flash passes through the optical filter 60, the ultraviolet region of a wavelength region of 400 nm or less is ultraviolet. The light is cut off. As a result, the flash light after the ultraviolet light having a wavelength of 400 nm or less is cut off is incident into the heat treatment space 15 in the chamber 10. Further, the flash after the ultraviolet light is cut off is irradiated onto the surface of the object to be processed 8 held on the holding plate 20, whereby the functional layer 82 formed on the surface is heated.

自閃光燈FL射出之閃光係將預先累積之靜電能轉換為極短之光脈衝、且照射時間大致為0.1毫秒以上且100毫秒以下的極短之強閃 光。受到自閃光燈FL之閃光照射的功能層82的溫度瞬間上升至處理溫度T2,其後急速下降至預加熱溫度T1。藉由此種閃光加熱,可對功能層82進行需要之熱處理。若功能層82為銀的奈米油墨,則處理溫度T2約為180℃。The flash fired from the flash lamp FL converts the pre-accumulated electrostatic energy into a very short light pulse, and the irradiation time is substantially 0.1 milliseconds or more and a very short flash of 100 milliseconds or less. Light. The temperature of the functional layer 82, which is irradiated with the flash of the flash lamp FL, instantaneously rises to the processing temperature T2, and then rapidly drops to the preheating temperature T1. The functional layer 82 can be subjected to the desired heat treatment by such flash heating. If the functional layer 82 is a silver nano ink, the processing temperature T2 is about 180 °C.

此處,由於閃光燈FL之照射時間係大致0.1毫秒以上且100毫秒以下的極短之時間,故而僅將位於被處理體8之表面側的功能層82升溫至處理溫度T2,而基材81幾乎未自預加熱溫度T1升溫。雖然本實施形態中之處理溫度T2(180℃)為超過PEN或PET之基材81之耐熱溫度的溫度,但由於僅將功能層82升溫至處理溫度T2而基材81幾乎未升溫,故而可防止對缺乏耐熱性之基材81造成熱損傷。另一方面,關於功能層82,由於被升溫至需要之處理溫度T2,故而可確實地進行所需之熱處理。即,若以本實施形態之方式藉由閃光照射來加熱被處理體8,則即便為缺乏耐熱性之基材81,亦可在不對基材81過度進行加熱的情況下,將功能層82升溫至超過基材81之耐熱溫度的目標處理溫度T2,而進行確實的熱處理。Here, since the irradiation time of the flash lamp FL is substantially 0.1 milliseconds or more and 100 milliseconds or less, the functional layer 82 located on the surface side of the object to be processed 8 is heated up to the processing temperature T2, and the substrate 81 is almost The temperature was not raised from the preheating temperature T1. Although the treatment temperature T2 (180 ° C) in the present embodiment is a temperature exceeding the heat resistance temperature of the substrate 81 of PEN or PET, since the temperature of the functional layer 82 is raised only to the treatment temperature T2, the substrate 81 is hardly heated, so that the substrate 81 can be hardly heated. Prevents thermal damage to the substrate 81 lacking heat resistance. On the other hand, since the functional layer 82 is heated up to the required processing temperature T2, the required heat treatment can be surely performed. In other words, when the object to be processed 8 is heated by the flash irradiation in the embodiment, even if the substrate 81 lacks heat resistance, the functional layer 82 can be heated without excessive heating of the substrate 81. A precise heat treatment is performed up to a target treatment temperature T2 exceeding the heat-resistant temperature of the substrate 81.

又,構成基材81之樹脂材料不僅缺乏耐熱性,而且由於紫外光而容易發生劣化。例如,若為PEN,則會因200nm~400nm之波長區域之光而發生劣化,若為PET,則會因200nm~380nm之波長區域之光而發生劣化。Further, the resin material constituting the substrate 81 not only lacks heat resistance but also is easily deteriorated by ultraviolet light. For example, in the case of PEN, it is deteriorated by light in a wavelength region of 200 nm to 400 nm, and in the case of PET, it is deteriorated by light in a wavelength region of 200 nm to 380 nm.

另一方面,圖5係表示氙氣閃光燈FL之放射分光分佈之圖。如該圖所示,自氙氣閃光燈FL射出之閃光中亦含有大量的波長400nm以下之紫外光成分。因此,若將來自閃光燈FL的閃光直接照射至被處理體8,則使得基材81吸收紫外光成分而損傷。On the other hand, Fig. 5 is a view showing the radiation splitting distribution of the xenon flash lamp FL. As shown in the figure, the flash emitted from the xenon flash lamp FL also contains a large amount of ultraviolet light components having a wavelength of 400 nm or less. Therefore, when the flash from the flash lamp FL is directly irradiated to the object to be processed 8, the substrate 81 is absorbed by the ultraviolet light component and damaged.

因此,於本實施形態中,在加熱光源30與腔室窗18之間設置截斷波長400nm以下之紫外光的光學濾光片60,自照射至被處理體8之表面的閃光中截斷波長400nm以下之紫外光。藉此,可防止由於閃光 中所包含之紫外光成分而損傷被處理體8之基材81。另一方面,由於照射至被處理體8之表面的閃光中一直含有強度較強之較波長400nm而位於長波長側的光,故而可確實地對功能層82實行需要之熱處理。Therefore, in the present embodiment, the optical filter 60 that cuts ultraviolet light having a wavelength of 400 nm or less is provided between the heating light source 30 and the chamber window 18, and the wavelength of the laser beam irradiated onto the surface of the object 8 is cut off by 400 nm or less. Ultraviolet light. Thereby preventing the flash The ultraviolet light component contained therein damages the substrate 81 of the object 8 to be processed. On the other hand, since the flash light that has been irradiated onto the surface of the object to be processed 8 always contains light having a stronger intensity than the wavelength of 400 nm and is located on the long wavelength side, the heat treatment required for the functional layer 82 can be surely performed.

於藉由閃光照射對被處理體8進行之閃光加熱處理結束並經過特定之時間之後,自腔室10中搬出處理後之被處理體8(步驟S5)。藉此,完成熱處理裝置1中之一連串之熱處理。再者,於搬出被處理體8之前,亦可將腔室10內置換成大氣環境。After the flash heat treatment of the object 8 by the flash irradiation is completed and a predetermined time elapses, the processed object 8 is carried out from the chamber 10 (step S5). Thereby, a series of heat treatments in the heat treatment apparatus 1 are completed. Further, the inside of the chamber 10 may be replaced with an atmospheric environment before the object to be processed 8 is carried out.

於本實施形態中,在腔室10內之保持板20與加熱光源30之閃光燈FL之間,設置截斷波長400nm以下之紫外光的光學濾光片60而進行閃光照射。因此,於自閃光燈FL射出之閃光透過光學濾光片60時,400nm以下之波長區域之紫外光被截斷。因此,自照射至被處理體8之表面的閃光中截斷波長400nm以下之紫外光,可防止由紫外光所導致之樹脂基材81之損傷。In the present embodiment, an optical filter 60 that cuts off ultraviolet light having a wavelength of 400 nm or less is provided between the holding plate 20 in the chamber 10 and the flash lamp FL of the heating light source 30 to perform flash irradiation. Therefore, when the flash emitted from the flash lamp FL passes through the optical filter 60, the ultraviolet light in the wavelength region of 400 nm or less is cut off. Therefore, the ultraviolet light having a wavelength of 400 nm or less is cut off from the flash of the surface irradiated onto the object to be processed 8, and the damage of the resin substrate 81 caused by the ultraviolet light can be prevented.

另一方面,由於照射至被處理體8之表面的閃光中一直含有強度較強之較波長400nm而位於長波長側的光,故而可藉由閃光照射而將被處理體8之功能層82升溫至需要之處理溫度T2。並且,由於閃光燈FL之照射時間係大致0.1毫秒以上且100毫秒以下的極短之時間,故而可在不對缺乏耐熱性之基材81過度加熱的情況下,僅將功能層82加熱至需要之處理溫度T2。On the other hand, since the flash applied to the surface of the object to be processed 8 always contains light having a stronger intensity than the wavelength of 400 nm and located on the long wavelength side, the functional layer 82 of the object 8 to be processed can be heated by the flash irradiation. To the required processing temperature T2. Further, since the irradiation time of the flash lamp FL is substantially 0.1 milliseconds or more and 100 milliseconds or less, it is possible to heat only the functional layer 82 to the required treatment without excessively heating the substrate 81 lacking heat resistance. Temperature T2.

如此,於本實施形態中,藉由對被處理體8照射從自閃光燈FL射出之照射時間極短的閃光中截斷波長400nm以下之紫外光後的光,可在不會因紫外光而對樹脂基材81造成損傷及熱損傷的情況下,僅將功能層82升溫至需要之處理溫度T2,而實行所需之熱處理。As described above, in the present embodiment, by irradiating the object 8 with light having a wavelength of 400 nm or less from the flash having a very short irradiation time emitted from the flash lamp FL, the resin can be prevented from being ultraviolet light. In the case where the substrate 81 causes damage and thermal damage, only the functional layer 82 is heated to the required processing temperature T2, and the desired heat treatment is performed.

以上對本發明之實施形態進行了說明,但本發明可在不脫離其宗旨之範圍內進行除上述以外的各種變更。例如,於上述實施形態中,將於PEN或PET之基材81之上表面積層有銀的奈米油墨之功能層 82者作為被處理體8,但被處理體8並不限定於此,亦可進行各種變化。The embodiments of the present invention have been described above, but the present invention can be variously modified without departing from the spirit and scope of the invention. For example, in the above embodiment, the functional layer of the nano ink having a surface layer of silver on the surface of the substrate 81 of PEN or PET is used. The 82 is the object to be processed 8, but the object to be processed 8 is not limited thereto, and various changes can be made.

例如,於上述實施形態中,被處理體8之基材81係使用PEN或PET而製成,但亦可代替其等而使用聚碳酸酯或丙烯酸系樹脂等其他樹脂材料。該等樹脂材料亦由於紫外光而發生劣化,聚碳酸酯及丙烯酸系樹脂均因200nm~300nm之波長區域之光而發生劣化。於使用聚碳酸酯或丙烯酸系樹脂作為基材81之情形時,將光學濾光片60之截斷波長區域設為300nm以下。光學濾光片60之截斷波長區域之調整可藉由改變溶解於石英玻璃中之金屬的種類而進行。藉由設置截斷波長300nm以下之紫外光的光學濾光片60,可與上述實施形態同樣,在不損傷樹脂基材81的情況下,將功能層82升溫至需要之處理溫度T2而進行加熱處理。For example, in the above embodiment, the base material 81 of the object to be processed 8 is made of PEN or PET, but other resin materials such as polycarbonate or acrylic resin may be used instead. These resin materials are also deteriorated by ultraviolet light, and both the polycarbonate and the acrylic resin are deteriorated by light in a wavelength region of 200 nm to 300 nm. When polycarbonate or an acrylic resin is used as the substrate 81, the cutoff wavelength region of the optical filter 60 is set to 300 nm or less. The adjustment of the cutoff wavelength region of the optical filter 60 can be performed by changing the kind of metal dissolved in the quartz glass. By providing the optical filter 60 that cuts ultraviolet light having a wavelength of 300 nm or less, the functional layer 82 can be heated to a desired processing temperature T2 and heat-treated without damaging the resin substrate 81 as in the above embodiment. .

又,積層於基材81上之功能層82亦不限定於銀之奈米油墨,亦可為銅等其他金屬之奈米油墨(或奈米線)。若功能層82為銅,則上述實施形態中之處理溫度T2約變為400℃。進而,功能層82亦可為非晶矽、摻雜後之多晶矽、ITO(Indium Tin Oxide,氧化銦錫)、凹版油墨等。於功能層82為ITO之情形時,處理溫度T2約變為220℃。又,若功能層82為矽,則處理溫度T2變為900℃以上。Further, the functional layer 82 laminated on the substrate 81 is not limited to the silver nano ink, and may be a nano ink (or a nanowire) of another metal such as copper. When the functional layer 82 is copper, the processing temperature T2 in the above embodiment is approximately 400 °C. Further, the functional layer 82 may be amorphous germanium, doped polysilicon, ITO (Indium Tin Oxide), gravure ink, or the like. In the case where the functional layer 82 is ITO, the processing temperature T2 becomes approximately 220 °C. Moreover, when the functional layer 82 is 矽, the processing temperature T2 becomes 900 ° C or more.

又,被處理體8之構造亦可為圖6所示者。圖6之被處理體8係使用接著劑84於玻璃基板83之上表面貼合玻璃基材81,於該基材81之上表面積層功能層82而構成。作為接著劑84,例如可使用以環氧樹脂作為主要成分之環氧系接著劑。環氧系接著劑之耐熱溫度約為160℃。藉由使用剛性較高之玻璃基板83,使得被處理體8之處理較在樹脂基材81上積層功能層82之上述實施形態變得更容易。再者,於完成必要處理之後,將基材81自玻璃基板83剝離,將積層有功能層82之基材81作為設備而利用。Further, the structure of the object to be processed 8 may be as shown in Fig. 6. In the object to be processed 8 of Fig. 6, a glass substrate 81 is bonded to the upper surface of the glass substrate 83 by using an adhesive 84, and a surface layer functional layer 82 is formed on the substrate 81. As the adhesive 84, for example, an epoxy-based adhesive containing an epoxy resin as a main component can be used. The heat resistant temperature of the epoxy-based adhesive is about 160 °C. By using the glass substrate 83 having a high rigidity, the treatment of the object to be processed 8 becomes easier than the above embodiment in which the functional layer 82 is laminated on the resin substrate 81. Further, after the necessary treatment is completed, the substrate 81 is peeled off from the glass substrate 83, and the substrate 81 on which the functional layer 82 is laminated is used as a device.

與上述實施形態同樣,亦對具有圖6所示之構造的被處理體8利用熱處理裝置1進行閃光加熱。玻璃基板83及玻璃基材81富有耐熱性,又,亦不會因紫外光而發生劣化。但是,樹脂之接著劑84係與上述實施形態之基材81同樣,缺乏耐熱性,且會因紫外光而發生劣化。因此,與上述實施形態同樣,藉由利用光學濾光片60而自照射至被處理體8之表面的閃光中截斷波長400nm以下之紫外光,可在不會因紫外光而對樹脂之接著劑84造成損傷及熱損傷的情況下,僅將功能層82升溫至需要之處理溫度,而實行所需之熱處理。Similarly to the above-described embodiment, the object to be processed 8 having the structure shown in Fig. 6 is also subjected to flash heating by the heat treatment apparatus 1. The glass substrate 83 and the glass substrate 81 are highly resistant to heat and are not deteriorated by ultraviolet light. However, the resin adhesive 84 is similar to the substrate 81 of the above-described embodiment in that it lacks heat resistance and is deteriorated by ultraviolet light. Therefore, similarly to the above-described embodiment, by using the optical filter 60, ultraviolet light having a wavelength of 400 nm or less is cut off from the flash of light irradiated onto the surface of the object to be processed 8, and the resin can be prevented from being adhered to by the ultraviolet light. In the event of damage and thermal damage to 84, only the functional layer 82 is warmed to the desired processing temperature and the desired heat treatment is performed.

總而言之,藉由本發明之熱處理技術,成為處理對象之被處理體8亦可為包含樹脂者。圖3之例中,被處理體8包含樹脂基材81,圖6之例中,被處理體8具有以樹脂之接著劑84貼設有基材81之構造。藉由利用本發明之熱處理技術對此種被處理體8進行加熱處理,可在不損傷被處理體8中所包含之樹脂的情況下,對被處理體8進行光照射加熱。In summary, according to the heat treatment technique of the present invention, the object to be processed 8 to be treated may be a resin-containing body. In the example of FIG. 3, the object to be processed 8 includes the resin base material 81. In the example of FIG. 6, the object to be processed 8 has a structure in which the base material 81 is attached to the resin adhesive 84. By heat-treating the object to be processed 8 by the heat treatment technique of the present invention, the object to be processed 8 can be heated by light irradiation without damaging the resin contained in the object to be processed 8.

又,於上述實施形態中,係使用使石英玻璃中含有特定之金屬成分者作為光學濾光片60,但並不限定於此,亦可為可自閃光中截斷特定波長區域之光的部件。例如,圖7係表示使用水之光學濾光片60的構造之圖。圖7之光學濾光片60係於中空之玻璃之板狀構件61之內部封入水62而構成。於水62中混合特定之顏色的油墨等而進行著色。藉此,光學濾光片60可自透過之閃光中截斷特定波長區域之光。與使金屬溶解並包含於石英玻璃中的情況相比,水之著色較為容易,僅藉由更換內部之水62即可簡單地調整光學濾光片60之截斷波長區域。In the above embodiment, the optical filter 60 is used as the optical filter 60 in the quartz glass. However, the present invention is not limited thereto, and may be a member that can cut off light in a specific wavelength region from the flash. For example, FIG. 7 is a view showing a configuration of an optical filter 60 using water. The optical filter 60 of Fig. 7 is constructed by enclosing water 62 in the interior of the hollow glass plate member 61. Coloring is carried out by mixing ink of a specific color or the like in the water 62. Thereby, the optical filter 60 can intercept light of a specific wavelength region from the transmitted flash. Compared with the case where the metal is dissolved and contained in the quartz glass, the coloring of the water is relatively easy, and the cutoff wavelength region of the optical filter 60 can be simply adjusted by merely replacing the internal water 62.

又,亦可藉由在石英玻璃之表面形成金屬或金屬氧化物之薄膜而形成光學濾光片60。但是此種薄膜有由於閃光照射時的急速之升溫而剝離之虞,因此較佳為使金屬溶解於石英玻璃中。Further, the optical filter 60 may be formed by forming a thin film of a metal or a metal oxide on the surface of the quartz glass. However, such a film has a tendency to be peeled off due to rapid temperature rise during flash irradiation, and therefore it is preferred to dissolve the metal in the quartz glass.

進而,亦可藉由改變閃光燈FL本身之構成而截斷特定之波長區 域之光。具體而言,若將封入於閃光燈FL之玻璃管內部之氙氣的氣壓降低,則圖5之放射分光分佈向長波長側移動。其結果,可從自閃光燈FL放射之閃光本身截斷短波長側之紫外光。反之,於自閃光中截斷長波長側之紅外光之情形時,可增大封入之氙氣之氣壓。但是,若改變氙氣之氣壓,則存在閃光之強度變低或對閃光燈FL造成損傷之情形,故而較佳為如上述實施形態般藉由光學濾光片60而截斷特定之波長區域之光。Furthermore, it is also possible to cut off a specific wavelength region by changing the composition of the flash FL itself. The light of the field. Specifically, when the gas pressure of the helium gas enclosed in the glass tube of the flash lamp FL is lowered, the radiation spectral distribution of FIG. 5 moves to the long wavelength side. As a result, the ultraviolet light on the short-wavelength side can be cut off from the flash emitted from the flash lamp FL. On the other hand, when the infrared light on the long wavelength side is cut off from the flash, the pressure of the enclosed helium gas can be increased. However, if the gas pressure of the helium gas is changed, the intensity of the flash light is lowered or the flash lamp FL is damaged. Therefore, it is preferable to cut off the light of the specific wavelength region by the optical filter 60 as in the above embodiment.

又,光學濾光片60所截斷之波長區域並不限定於400nm以下,亦可設為對應於被處理體8中所包含之樹脂之特性的適當波長區域。例如,如上所述,若被處理體8中所包含之樹脂為聚碳酸酯或丙烯酸系樹脂,則光學濾光片60所截斷之波長區域可為300nm以下。又,若被處理體8中所包含之樹脂為PEN,則會因200nm~400nm之波長區域之光而發生劣化,因此亦可應用僅截斷200nm~400nm之波長區域之光的光學濾光片60。進而,於被處理體8中所包含之樹脂具有會因長波長之紅外光而發生劣化之性質的情形時,亦可使用截斷紅外光之光學濾光片60。即,光學濾光片60所截斷之波長區域可為會損傷被處理體8中所包含之樹脂的波長區域。In addition, the wavelength region in which the optical filter 60 is cut off is not limited to 400 nm or less, and may be an appropriate wavelength region corresponding to the characteristics of the resin contained in the object to be processed 8. For example, as described above, when the resin contained in the object to be processed 8 is polycarbonate or acrylic resin, the wavelength region cut by the optical filter 60 may be 300 nm or less. In addition, when the resin contained in the object to be processed 8 is PEN, it is deteriorated by light in a wavelength region of 200 nm to 400 nm. Therefore, an optical filter 60 that cuts only light in a wavelength region of 200 nm to 400 nm can be applied. . Further, when the resin contained in the object to be processed 8 has a property of being deteriorated by infrared light of a long wavelength, an optical filter 60 that cuts off infrared light may be used. That is, the wavelength region cut by the optical filter 60 may be a wavelength region that damages the resin contained in the object to be processed 8.

又,於上述實施形態中,保持板20中含有加熱器21,於閃光照射前對被處理體8進行預加熱,而於處理溫度T2為較低之溫度之情形時,由於可僅藉由閃光照射而將功能層82升溫至處理溫度T2,故而利用加熱器21進行預加熱並非為必需的要素。但是,藉由在利用保持板20將被處理體8穩定地加熱至預加熱溫度T1之後進行閃光照射,可使不同之複數個被處理體8間之溫度歷程變得均勻。Further, in the above embodiment, the holding plate 20 includes the heater 21, and the object to be processed 8 is preheated before the flash irradiation, and when the processing temperature T2 is a lower temperature, the flash can be used only by the flash. Since the functional layer 82 is heated to the treatment temperature T2 by irradiation, preheating by the heater 21 is not an essential element. However, by performing the flash irradiation after stably heating the object 8 to the preheating temperature T1 by the holding plate 20, the temperature history between the plurality of different processed bodies 8 can be made uniform.

又,亦可於保持板20中設置冷卻機構,對閃光加熱處理後之被處理體8強制性地進行冷卻。Further, a cooling mechanism may be provided in the holding plate 20 to forcibly cool the object to be processed 8 after the flash heat treatment.

又,於上述實施形態中,係於複數個閃光燈FL之上方設置反射 器32,亦可代替其而將複數個閃光燈FL分別設為附有反射膜之燈。即,於各閃光燈FL之玻璃管之上半側附有反射膜,藉此將閃光反射至熱處理空間15之側。於使用此種附有反射膜之閃光燈FL之情形時,如圖8所示,亦可將位於燈排列之兩端的閃光燈FL配置於其他閃光燈FL的更下方(靠近被處理體8之側),從而提高被處理體8之周邊部的照度。於此情形時,亦可分別於燈排列之兩端,將2個以上之閃光燈FL靠近被處理體8而配置。Moreover, in the above embodiment, the reflection is set above the plurality of flash lamps FL. Instead of the device 32, a plurality of flash lamps FL may be respectively provided as lamps with a reflective film. That is, a reflective film is attached to the upper half of the glass tube of each of the flash lamps FL, whereby the flash is reflected to the side of the heat treatment space 15. When such a flash lamp FL with a reflective film is used, as shown in FIG. 8, the flasher FL located at both ends of the lamp array may be disposed further below the other flasher FL (near the side of the object to be processed 8). Thereby, the illuminance of the peripheral portion of the object to be processed 8 is improved. In this case, two or more flash lamps FL may be placed close to the object to be processed 8 at both ends of the lamp array.

又,於被處理體8具有於樹脂基材81之上表面積層有功能層82之構造的情形時,由於被處理體8整體具有可撓性,故而亦可將被處理體8以自輥捲出並利用輥捲繞的輥對輥(roll-to-roll)之方式搬送。於此情形時,即便將閃光燈FL設為連續點亮之氙氣燈等,由於藉由連續地搬送被處理體8而於被處理體8之各位置上受到與閃光照射相同之短時間照射,故而可獲得與上述實施形態相同之處理結果。再者,即便於此情形時,亦可從自氙氣燈射出之光中截斷損傷樹脂之波長區域。Further, when the object to be processed 8 has a structure in which the functional layer 82 is formed on the surface of the resin substrate 81, since the object to be processed 8 has flexibility as a whole, the object to be processed 8 can be rolled from the roll. It is conveyed by a roll-to-roll method in which a roll is wound. In this case, even if the flash lamp FL is set to continuously light the xenon lamp or the like, the object to be processed 8 is continuously conveyed and subjected to the same short-time irradiation as the flash irradiation at each position of the object 8 to be processed. The same processing results as in the above embodiment can be obtained. Further, even in this case, the wavelength region of the damaged resin can be cut off from the light emitted from the xenon lamp.

又,於上述實施形態中,加熱光源30中包含氙氣閃光燈FL,但亦可代替其而使用氪氣等其他稀有氣體之閃光燈。Further, in the above embodiment, the heating light source 30 includes the xenon flash lamp FL, but a flash lamp of another rare gas such as xenon may be used instead.

[產業上之可利用性][Industrial availability]

本發明之熱處理方法及熱處理裝置可應用於包含樹脂之各種被處理體,特別是可較佳地利用於電子紙等中所使用之軟性器件、軟性顯示器、平板顯示器(FPD,Flat Panel Display)、電子機器、太陽電池、燃料電池、半導體元件等中。The heat treatment method and the heat treatment apparatus of the present invention can be applied to various objects to be processed including a resin, and in particular, can be preferably used for soft devices, flexible displays, flat panel displays (FPD, Flat Panel Display) used in electronic paper or the like. In electronic equipment, solar cells, fuel cells, semiconductor components, etc.

1‧‧‧熱處理裝置1‧‧‧ Heat treatment unit

8‧‧‧被處理體8‧‧‧Processed body

9‧‧‧控制部9‧‧‧Control Department

10‧‧‧腔室10‧‧‧ chamber

11‧‧‧腔室側壁11‧‧‧Cell wall

12‧‧‧腔室底部12‧‧‧Bottom of the chamber

15‧‧‧熱處理空間15‧‧‧ Heat treatment space

18‧‧‧腔室窗18‧‧‧Case window

20‧‧‧保持板20‧‧‧ Keep board

21‧‧‧加熱器21‧‧‧ heater

30‧‧‧加熱光源30‧‧‧heating light source

32‧‧‧反射器32‧‧‧ reflector

40‧‧‧氣體供給機構40‧‧‧ gas supply mechanism

41‧‧‧處理氣體供給源41‧‧‧Processing gas supply

42‧‧‧供給配管42‧‧‧Supply piping

43‧‧‧供給閥門43‧‧‧Supply valve

50‧‧‧排氣機構50‧‧‧Exhaust mechanism

51‧‧‧排氣裝置51‧‧‧Exhaust device

52‧‧‧排氣配管52‧‧‧Exhaust piping

53‧‧‧排氣閥門53‧‧‧Exhaust valve

60‧‧‧光學濾光片60‧‧‧Optical filter

FL‧‧‧閃光燈FL‧‧‧Flash

Claims (8)

一種熱處理方法,其特徵在於:其係藉由對包含樹脂之基材及形成於該基材上面之功能層之被處理體之表面照射光而將該被處理體加熱的熱處理方法,該熱處理方法係對上述被處理體照射從自包含閃光燈之光源射出之閃光中截斷會損傷上述樹脂之紫外光的該閃光。 A heat treatment method for heat-treating the object to be processed by irradiating light onto a surface of a substrate including a resin and a functional layer formed on the substrate, the heat treatment method The flash of the ultraviolet light emitted from the light source from the light source containing the flash is cut off from the flash of the object to be processed. 一種熱處理方法,其特徵在於:其係藉由對以樹脂之接著劑貼設有基材之上面形成有功能層之被處理體之表面照射光,而將該被處理體加熱的熱處理方法,該熱處理方法係對上述被處理體照射從自包含閃光燈之光源射出之閃光中截斷會損傷上述樹脂之紫外光的該閃光。 A heat treatment method of heat-treating the object to be processed by irradiating light onto a surface of a body to be processed having a functional layer formed on a substrate with a resin adhesive attached thereto, In the heat treatment method, the object to be processed is irradiated with the flash light which is damaging the ultraviolet light of the resin from the flash emitted from the light source including the flash lamp. 如請求項1或2之熱處理方法,其中從自上述光源射出之光中將波長400nm以下之紫外光截斷。 The heat treatment method according to claim 1 or 2, wherein the ultraviolet light having a wavelength of 400 nm or less is cut off from the light emitted from the light source. 如請求項3之熱處理方法,其中藉由使自上述光源射出之光透過濾光片而將波長400nm以下之紫外光截斷。 The heat treatment method according to claim 3, wherein the ultraviolet light having a wavelength of 400 nm or less is cut off by passing the light emitted from the light source through the filter. 一種熱處理裝置,其特徵在於:其係藉由對包含樹脂之基材及形成於該基材上面之功能層之被處理體之表面照射光而將該被處理體加熱的熱處理裝置,且包括:保持機構,其保持上述被處理體;光源,其包含對保持於上述保持機構上的上述被處理體照射閃光之閃光燈;及濾光片,其設置於上述保持機構與上述光源之間,且截斷會損傷上述樹脂之紫外光。 A heat treatment apparatus which heats a surface of a target object including a resin substrate and a functional layer formed on the substrate, and heats the object to be processed, and includes: a holding mechanism that holds the object to be processed, a light source that includes a flash lamp that illuminates the object to be processed held by the holding mechanism, and a filter that is disposed between the holding mechanism and the light source and that is cut off It will damage the ultraviolet light of the above resin. 一種熱處理裝置,其特徵在於:其係藉由對以樹脂之接著劑貼設有基材之上面形成有功能層之被處理體之表面照射光,而將 該被處理體加熱的熱處理裝置,且包括:保持機構,其保持上述被處理體;光源,其包含對保持於上述保持機構上的上述被處理體照射閃光之閃光燈;及濾光片,其設置於上述保持機構與上述光源之間,且截斷會損傷上述樹脂之紫外光。 A heat treatment apparatus characterized by irradiating light onto a surface of a target body on which a functional layer is formed on a substrate with a resin adhesive attached thereto a heat treatment device for heating the object to be processed, comprising: a holding mechanism that holds the object to be processed; a light source that includes a flash lamp that illuminates the object to be processed held on the holding mechanism; and a filter, which is disposed The ultraviolet light between the holding mechanism and the light source is cut off to damage the resin. 如請求項5或6之熱處理裝置,其中上述濾光片截斷波長400nm以下之紫外光。 The heat treatment apparatus according to claim 5 or 6, wherein the filter cuts off ultraviolet light having a wavelength of 400 nm or less. 如請求項5或6之熱處理裝置,其中上述濾光片包含封入有經著色之水的板狀構件。The heat treatment apparatus of claim 5 or 6, wherein the filter comprises a plate-like member enclosing the colored water.
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