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TWI500795B - Film forming device - Google Patents

Film forming device Download PDF

Info

Publication number
TWI500795B
TWI500795B TW103102493A TW103102493A TWI500795B TW I500795 B TWI500795 B TW I500795B TW 103102493 A TW103102493 A TW 103102493A TW 103102493 A TW103102493 A TW 103102493A TW I500795 B TWI500795 B TW I500795B
Authority
TW
Taiwan
Prior art keywords
target
film forming
film
mounting portion
target electrode
Prior art date
Application number
TW103102493A
Other languages
English (en)
Chinese (zh)
Other versions
TW201446997A (zh
Inventor
Yuji Kajihara
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51299318&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI500795(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of TW201446997A publication Critical patent/TW201446997A/zh
Application granted granted Critical
Publication of TWI500795B publication Critical patent/TWI500795B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physical Vapour Deposition (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
TW103102493A 2013-02-05 2014-01-23 Film forming device TWI500795B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013020177 2013-02-05
PCT/JP2013/005136 WO2014122700A1 (ja) 2013-02-05 2013-08-30 成膜装置

Publications (2)

Publication Number Publication Date
TW201446997A TW201446997A (zh) 2014-12-16
TWI500795B true TWI500795B (zh) 2015-09-21

Family

ID=51299318

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103102493A TWI500795B (zh) 2013-02-05 2014-01-23 Film forming device

Country Status (4)

Country Link
JP (1) JP5731085B2 (ja)
KR (1) KR20150006459A (ja)
TW (1) TWI500795B (ja)
WO (1) WO2014122700A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6379208B2 (ja) * 2014-09-24 2018-08-22 株式会社アルバック スパッタリング装置
JP6529129B2 (ja) * 2015-11-30 2019-06-12 株式会社フィルテック 成膜装置
CN110819964A (zh) * 2018-08-13 2020-02-21 中兴通讯股份有限公司 真空镀膜设备、方法及滤波器腔体膜层的制备方法
JP7257807B2 (ja) * 2019-02-12 2023-04-14 東京エレクトロン株式会社 スパッタ装置
JP7724062B2 (ja) * 2021-01-14 2025-08-15 東京エレクトロン株式会社 成膜装置及び成膜方法
KR20240013481A (ko) 2022-07-22 2024-01-30 캐논 톡키 가부시키가이샤 성막 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1069931C (zh) * 1993-12-24 2001-08-22 松下电器产业株式会社 真空溅镀装置
JP2006037119A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 成膜装置とそれを用いた成膜方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0499271A (ja) * 1990-08-10 1992-03-31 Olympus Optical Co Ltd 多層薄膜の作製方法およびその装置
IT1318937B1 (it) * 2000-09-27 2003-09-19 Getters Spa Metodo per la produzione di dispositivi getter porosi con ridottaperdita di particelle e dispositivi cosi' prodotti
JP2002158189A (ja) * 2000-11-22 2002-05-31 Japan Science & Technology Corp 導電体薄膜の堆積法
JP2005002388A (ja) * 2003-06-11 2005-01-06 Jeol Ltd 真空蒸着装置
JP4782037B2 (ja) * 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
JP2010106290A (ja) * 2008-10-28 2010-05-13 Showa Denko Kk 成膜装置および成膜方法、磁気記録媒体、磁気記録再生装置
JP2012149339A (ja) * 2010-12-28 2012-08-09 Canon Anelva Corp スパッタリング装置、及び電子デバイスの製造方法
JP2012219338A (ja) * 2011-04-11 2012-11-12 Panasonic Corp スパッタリング装置及びスパッタリング方法、ならびにその方法で作製された電子デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1069931C (zh) * 1993-12-24 2001-08-22 松下电器产业株式会社 真空溅镀装置
JP2006037119A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 成膜装置とそれを用いた成膜方法

Also Published As

Publication number Publication date
KR20150006459A (ko) 2015-01-16
JP5731085B2 (ja) 2015-06-10
TW201446997A (zh) 2014-12-16
WO2014122700A1 (ja) 2014-08-14
JPWO2014122700A1 (ja) 2017-01-26

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