TWI500790B - Plasma evaporator - Google Patents

Description

Plasma evaporation device

The present invention relates to a plasma evaporation apparatus, and more particularly to a plasma evaporation apparatus using a plurality of plasma guns for evaporating evaporation material.

As a technique related to a conventional plasma evaporation apparatus, there is known an ion plating apparatus. For example, as described in Patent Document 1, a vacuum vessel is provided with a plurality of plasma guns having a magnet means and a corresponding steering coil and a hearth. Ion plating device. In the ion plating apparatus, an annular permanent magnet is provided around the hearth, and the magnetic pole directions of the magnet means, the steering coil, and the annular permanent magnet in the adjacent plasma guns can be reversed. It reduces the interference of each magnetic line and reduces the distortion of the plasma beam.

(previous technical literature) (Patent Literature)

Patent Document 1: Japanese Patent Laid-Open 9-256147

However, in the plasma evaporation apparatus of recent years, as a plurality of plasma guns arranged in parallel, a first plasma gun having a direction of magnetic flux in the emission direction of the plasma beam and a plasma gun are developed. A plasma gun of a second plasma gun having a direction of magnetic flux in a direction opposite to the direction of emission.

At this time, the self-induced magnetic field is excited by the flow of the plasma beam itself, and the flow of the plasma beam is not only distorted, but the flow of the distortion is mutually enhanced between the plurality of plasma guns and strongly excites the self-induced magnetic field, and the electricity is present. The risk of further distortion of the flow of the plasma bundle. As a result, there is a problem that it is difficult to guide the plasma beam to the evaporation material with high precision.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a plasma evaporation apparatus capable of guiding a plasma beam to a vaporized material with high precision.

In order to solve the above problems, the plasma evaporation device of the present invention is a plasma evaporation device for evaporating material in a chamber, wherein a plurality of plasma guns for evaporating evaporation materials are provided, and a plurality of plasma guns are included in the electricity. a first plasma gun having a direction of magnetic flux in the direction in which the plasma beam is emitted, and a second plasma gun having a direction of magnetic flux in a direction opposite to the direction in which the plasma beam is emitted, when viewed from a direction opposite to the evaporation material, The plasma guns are arranged side by side in the chamber, and the second plasma gun is not arranged on the right side when the injection direction is the front with respect to the first plasma gun.

In the plasma evaporation device, when a plurality of plasma guns arranged in parallel are arranged in a direction opposite to the evaporation material, the second plasma gun is not disposed. It is arranged on the right side when the injection direction is the front with respect to the first plasma gun. Thereby, it is possible to suppress the flow of the plasma bundles emitted from the adjacent plasma guns from being twisted in proximity to each other. As a result, it is possible to suppress the self-induced magnetic field from being strongly excited between the plurality of plasma guns, and to suppress further distortion of the flow of the plasma beam. Therefore, the plasma beam can be guided to the evaporation material with high precision.

Further, it is preferable that a plurality of plasma guns are arranged in parallel so as to satisfy the relationship of the steering coil type (1) which controls the direction in which the plasma beam is emitted. Thereby, by providing a plurality of plasma guns in parallel according to the relational expression of the following formula (1), it is possible to appropriately suppress the self-induced magnetic field mutual reinforcement between the plurality of plasma guns.

among them, s is the diameter of the steering coil

D is the distance between a plurality of plasma guns

Further, it is preferable that at least one of the plasma gun and the evaporation material is disposed such that a center position of the evaporation material deviates from an emission axis of the plasma beam. Further, at least one of the plasma gun and the evaporation material is disposed to be relatively movable so that the center position of the evaporation material is deviated from the emission axis of the plasma beam. In this case, for example, the deviation of the evaporation material from the exit axis of the plasma beam can be considered.

According to the present invention, it is possible to provide a plasma evaporation apparatus capable of guiding a plasma beam to a vaporized material with high precision.

1‧‧‧ film forming device (plasma evaporation device)

7‧‧‧Plastic gun

7L‧‧‧2nd plasma gun

7R‧‧‧1st plasma gun

10‧‧‧Vacuum chamber (chamber)

48‧‧‧Steering coil

Ma‧‧‧ film forming material (evaporation material)

G‧‧‧ magnetic lines

P‧‧‧plasma beam

The injection axis of the PL‧‧‧ plasma beam

Fig. 1 is a schematic block diagram showing a film forming apparatus including a plasma evaporation apparatus of an embodiment.

Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1.

Fig. 3 is a schematic plan view showing the arrangement of a plasma gun in the film forming apparatus of Fig. 1.

Fig. 4 is a view showing the distance between the plasma guns in the film forming apparatus of Fig. 1.

Fig. 5 is a schematic plan view showing the arrangement of a plasma gun in the film forming apparatus of the plasma evaporation apparatus according to the embodiment.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, the same or corresponding elements are denoted by the same reference numerals, and the repeated description is omitted.

Fig. 1 is a schematic structural view showing a film forming apparatus including a plasma evaporation apparatus according to an embodiment, and Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1. In the figure, the XYZ coordinate system is shown for convenience of explanation. The Y-axis direction is a direction in which a film formation object described later is conveyed. The X-axis direction is a direction in which the film formation object faces the hearth portion 20 to be described later. The Z-axis direction is a direction orthogonal to the X-axis direction and the Y-axis direction.

The film forming apparatus of the present embodiment is a film forming object by a RPD [Reactive Plasma Deposition] method, and is used here for so-called film formation. Ion plating apparatus for ion plating. The film forming apparatus constitutes a plasma evaporation apparatus that evaporates a film forming material (evaporating material) in a chamber using a plurality of plasma guns.

In the film forming apparatus of the present embodiment, the film formation object is formed in a state where the film formation object is erected such that the thickness direction of the film formation object is horizontal, or is inclined from the upright state. A so-called vertical film forming apparatus that is disposed in a chamber and transported. At this time, the X-axis direction is the horizontal direction and is the thickness direction of the film formation object, the Y-axis direction is the horizontal direction, and the Z-axis direction is the vertical direction.

On the other hand, the film forming apparatus of the present embodiment may be a so-called horizontal film forming in which the film formation object is placed in the chamber so that the film thickness of the object to be filmed is substantially in the vertical direction. Device. At this time, the Z-axis and the Y-axis direction are the horizontal direction, and the X-axis direction is the vertical direction and the plate thickness direction. Hereinafter, in the present embodiment, a case of a vertical type will be described as an example.

As shown in FIGS. 1 and 2 , the film forming apparatus 1 of the present embodiment includes a deposition unit 2 , a transfer mechanism 3 , and a vacuum chamber (chamber) 10 . Further, the stacking unit 2 includes a plurality of plasma guns 7 and a plurality of hearth portions 20.

The vacuum chamber 10 has a transfer chamber 10a for transporting the film formation object 11 in which the film formation material Ma is formed, a film formation chamber 10b for evaporating and diffusing the film formation material Ma, and a film formation chamber 10b. The plasma bundle P emitted from the slurry gun 7 is housed in the plasma port 10c of the vacuum chamber 10.

The transfer chamber 10a, the film forming chamber 10b, and the plasma port 10c communicate with each other. The transfer chamber 10a is in a predetermined transport direction (arrow A in the figure) (Y-axis) Make settings. Further, the vacuum chamber 10 is made of a conductive material and is connected to a ground potential. A pressure adjusting device (not shown) that adjusts the pressure in the vacuum chamber 10 is connected to the vacuum chamber 10. The pressure adjusting device includes a pressure reducing portion such as a turbo molecular pump and a cryopump, and a pressure measuring portion that measures the pressure in the vacuum chamber 10.

The film forming chamber 10b has one of the side walls 10j and 10k (see FIG. 2) along the one side in the transport direction A and the side walls 10h and 10i in the direction (X-axis direction) intersecting the transport direction A (see FIG. 1). And a side wall 10m opposite to the transfer chamber 10a. The side wall 10h is disposed on the upstream side of the transport direction A in the film forming chamber 10b (that is, on the negative side in the Y-axis direction). The side wall 10i is disposed on the downstream side of the transport direction A in the film forming chamber 10b (that is, on the positive side in the Y-axis direction).

The conveyance mechanism 3 conveys the film formation object holding member 16 that holds the film formation object 11 in the conveyance direction A in a state of being opposed to the film formation material Ma. The transport mechanism 3 is composed of a plurality of transport rollers 15 provided in the transport chamber 10a. The conveyance rollers 15 are arranged at equal intervals in the conveyance direction A, and are conveyed in the conveyance direction A while supporting the film formation object holding member 16. Further, as the film formation object 11, for example, a plate member such as a glass substrate or a plastic substrate is used. In the film formation object holding member 16, for example, a transfer tray or the like that holds the film formation object 11 in a state where the film formation surface of the film formation object 11 is exposed is used.

The plasma gun 7 is of a pressure gradient type, and its main body portion is connected to the film forming chamber 10b via the plasma port 10c of the side wall 10h. The plasma gun 7 generates a plasma beam P in the vacuum chamber 10. The plasma beam P generated in the plasma gun 7 is emitted from the plasma port 10c to the film forming chamber 10b in the Y-axis direction. In the installation of a plasma gun 7 A steering coil 48 for guiding the plasma beam P to the film forming chamber 10b is provided around the plasma port 10c. The steering coil 48 is excited by the power source for the steering coil, whereby the emission direction of the plasma beam P (hereinafter simply referred to as "output direction") is controlled.

In the present embodiment, a plurality of (three in the present embodiment) plasma guns 7 are provided for one film forming chamber 10b. A plurality of plasma guns 7 are arranged side by side in the longitudinal direction (Z-axis direction) of the film formation object 11. A plurality of plasma guns 7 are disposed on the same side wall 10h. Further, the plurality of plasma guns 7 may be alternately arranged in the pair of side walls 10h and 10i, or may be arranged in the Z-axis direction and arranged in the X-axis direction. A detailed description of the plurality of plasma guns 7 will be described later.

The film forming apparatus 1 is provided with a plurality of (three in the present embodiment) furnace portions 20 corresponding to a plurality of plasma guns 7. One cylinder portion 20 is composed of one main hearth 17 and one ring. The hearth 6 is constructed.

The plurality of cylinder portions 20 are disposed on the side wall 10m corresponding to the plurality of plasma guns 7, and are arranged side by side in the longitudinal direction (Z-axis direction) of the film formation object 11. Further, the plurality of cylinder portions 20 may be arranged side by side in the short-side direction (Y-axis direction and transport direction) of the film formation object 11, or may be arranged in parallel in the two directions of the Z-axis direction and the Y-axis direction.

The hearth portion 20 has a mechanism for holding the film forming material Ma as an evaporation source. The hearth portion 20 is provided in the film forming chamber 10b of the vacuum chamber 10, and is disposed in the negative direction in the X-axis direction when viewed from the conveying mechanism 3. The hearth portion 20 has a main anode that guides the plasma beam P emitted from the plasma gun 7 to the main anode of the film forming material Ma or a plasma anode P that is emitted from the plasma gun 7 to be guided. Main hearth 17.

The main hearth 17 has a cylindrical filling portion 17a that is filled with the film forming material Ma and extends in the positive direction of the X-axis direction, and a flange portion 17b that protrudes from the filling portion 17a. The main hearth 17 is maintained at a positive potential with respect to the ground potential having the vacuum chamber 10, and attracts the plasma beam P. A through hole 17c for filling the film forming material Ma is formed in the filling portion 17a of the main hearth 17 into which the plasma beam P is incident. Further, the front end portion of the film forming material Ma is exposed to the film forming chamber 10b at one end of the through hole 17c.

The ring hearth 6 is an auxiliary anode having an electromagnet for inducing the plasma beam P. The ring hearth 6 is disposed around the filling portion 17a of the main hearth 17 that holds the film forming material Ma. The ring hearth 6 has an annular coil 9, an annular permanent magnet 13, and an annular container 12, and the coil 9 and the permanent magnet 13 are housed in the container 12. The ring hearth 6 controls the width, the thickness, or the width and thickness of the plasma beam P incident on the film forming material Ma in accordance with the magnitude of the current flowing through the coil 9.

As the film forming material Ma, a transparent conductive material such as ITO or ZnO or an insulating sealing material such as SiON is exemplified. When the film forming material Ma is composed of an insulating material, when the main furnace 17 is irradiated with the plasma beam P, the front end portion of the film material Ma is evaporated by the current main furnace 17 from the plasma beam P. The film-forming material fine particles Mb ionized by the plasma beam P are moved toward the transfer chamber 10a while diffusing in the film forming chamber 10b. Further, when the film forming material Ma is composed of a conductive material, when the main furnace cylinder 17 is irradiated with the plasma beam P, the plasma beam P is directly incident on the film forming material Ma and the leading end portion of the film forming material Ma is heated and evaporated. By plasma beam P is ionized The film-forming material fine particles Mb are moved toward the transfer chamber 10a while diffusing in the film forming chamber 10b.

The film-forming material fine particles Mb diffused in the film forming chamber 10b move in the positive X-axis direction of the film forming chamber 10b, and adhere to the surface of the film forming object 11 in the transfer chamber 10a. Further, the film forming material Ma is formed into a cylindrical solid material having a predetermined length and filled in the main hearth 17 of the hearth portion 20. In addition, the film forming material Ma is sequentially extruded from the negative X-axis side of the main hearth 17 of the hearth portion 20 in accordance with the consumption of the film forming material Ma, so that the front end portion of the film forming material Ma at the foremost end side is maintained. The predetermined positional relationship of the upper end of the main hearth 17.

Fig. 3 is a schematic plan view showing the arrangement of the plasma gun in the film forming apparatus of Fig. 1, and Fig. 4 is a view showing the distance between the plasma guns in the film forming apparatus of Fig. 1. As shown in Fig. 3, the plurality of plasma guns 7 of the present embodiment include a first plasma gun 7R and a second plasma gun 7L. The first plasma gun 7R is a plasma source having a direction of magnetic field lines G in the direction in which the plasma beam P is emitted, and is called a so-called R gun. The second plasma gun 7L is a plasma source having a direction of magnetic lines of force G in a direction opposite to the direction in which the plasma beam P is emitted, and is called a so-called L gun.

Here, the plurality of plasma guns 7 emit the plasma beam P in the positive direction of the Y-axis, and are arranged side by side in the Z-axis direction on the side wall 10h of the vacuum chamber 10 (see FIGS. 1 and 2). Further, when viewed from the positive direction of the X-axis toward the negative direction of the X-axis, the plurality of plasma guns 7 are disposed such that the second plasma gun 7L, the second plasma gun 7L, and the first plasma gun 7R are oriented in this order. The Z axis is juxtaposed in the negative direction.

That is, as shown in the figure, when viewed from the direction opposite to the film forming material Ma (the direction opposite to the evaporation direction of the film forming material particles Mb), the plurality of plasma guns 7 are arranged in series at a predetermined interval in the Z-axis direction. And, they are respectively arranged in the direction in which the plasma beam P is emitted in the orthogonal direction (Y-axis direction) of the intersecting direction which is the direction in which the parallel arrangement is provided. Further, when viewed in a direction opposite to the film forming material Ma, the plurality of plasma guns 7 are disposed such that the second plasma gun 7L is not arranged on the right side of the first plasma gun 7R when the emission direction is forward. In other words, when viewed from the emission direction (when viewed from the Y-axis negative direction toward the Y-axis positive direction), the plurality of plasma guns 7 are disposed such that the second plasma gun 7L is not arranged on the side of the film forming material Ma as the lower side. The right side of the first plasma gun 7R (on the negative side of the X-axis).

In other words, when the plurality of plasma guns 7 are viewed from the side of the transport mechanism 3 in the thickness direction of the film formation object 11 (see FIGS. 1 and 2), the second side is arranged in order from the left side when the emission direction is the front side. The plasma gun 7L, the second plasma gun 7L, and the first plasma gun 7R have a so-called LLR arrangement structure.

Further, as shown in Fig. 4, a plurality of plasma guns 7 are arranged side by side at a predetermined interval to prevent the adjacent one of the pair of plasma guns 7, 7 from adversely affecting each other due to the plasma bundle P. Specifically, a plurality of plasma guns 7 are juxtaposed to satisfy the relationship of the following formula (1) of the steering coil 48. Further, the distance D between the plasma guns 7 means the distance between the emission axes PL of the plasma beam P thereof.

among them, s is the diameter of the steering coil 48

D is the distance between the plurality of plasma guns 7

Further, in the film forming apparatus 1 configured as above, at least one of the plasma gun 7 and the film forming material Ma is disposed to be relatively movable in the juxtaposed direction of the plasma gun 7, so that the center position of the film forming material Ma is relatively The emission axis PL of the plasma beam P is deviated. For example, each of the cylinder portions 20 is hermetically fixed to the vacuum chamber 10 by a long hole or the like having a Z-axis direction as a longitudinal direction, and each of the furnace portions 20 is relatively movable in the Z-axis direction. Thereby, the center position of the film forming material Ma is shifted by a predetermined distance dZ in the Z-axis direction with respect to the emission axis PL of the plasma beam P when viewed in the X-axis direction. Further, instead of providing the respective cylinder portions 20 so as to be relatively movable or otherwise, the respective plasma guns 7 may be disposed to be relatively movable.

The predetermined distance dZ is set in accordance with the radius of gyration of the electrons in the plasma beam P (Larmor radius) R and the radius of gyration r of the film forming material Ma, so that the plasma beam P is irradiated onto the film forming material Ma. The predetermined distance dZ at this time is a value between these radius gyrations R and r, and is preferably set by the following formula (2). Moreover, the predetermined distance dZ may be, for example, an analog value derived from a simulation experiment, or may be an actual measured value or an empirical value.

dZ=(R×r) ^0.5 ×α(α: coefficient)...(2)

However, the plasma gun 7 has a property of being twisted and flowing into the anode by a self-induced magnetic field generated by the flow of the plasma beam P itself. The twisting direction of the plasma beam P differs depending on the direction of the magnetic field lines G, and is different between the first and second plasma guns 7R and 7L. Further, when viewed from a direction opposite to the film forming material Ma, the second plasma gun 7L is arranged side by side with respect to the first electric power. When the shotgun 7R has the emission direction as the right side in the front direction (so-called RL arrangement), it is found that the flow of the plasma bundle P emitted from the adjacent plasma guns 7 is distorted so as to be close to each other (see Fig. 5).

In this regard, in the present embodiment, when the plurality of plasma guns 7 arranged in parallel are viewed from the direction opposite to the film forming material Ma, the second plasma guns 7L are arranged not to be aligned with respect to the first plasma. The gun 7R has a configuration in which the RL arrangement is not included when the injection direction is the front side. Thereby, the use of the RL configuration can suppress the obvious phenomenon that the flow of the plasma beam P is twisted in such a manner as to be close to each other.

That is, according to the present embodiment, it is possible to suppress the self-induced magnetic field from being strongly excited between the plurality of plasma guns 7, and to suppress further distortion of the flow of the plasma beam P. As a result, the plasma beam P can be guided to the film formation material Ma with high precision, and the film formation material Ma can be appropriately evaporated and formed on the film formation object 11 in a reasonable (with a good film thickness distribution).

Further, in the present embodiment, as described above, the plurality of plasma guns 7 are arranged in parallel so as to satisfy the relational expression of the above formula (1). Thus, by the plurality of plasma guns 7 having the arrangement relationship of the above formula (1), it is possible to appropriately suppress the enhancement of the self-induced magnetic field between them.

Also, for example D When s × 1.1, the distance D between the plasma guns 7 becomes small, and the self-induced magnetic field is strongly excited between the plasma guns 7 to make the distortion of the flow of the plasma beam P large, thereby making it difficult to apply the plasma beam P. Guided to the film forming material Ma. Another way, for example s×2.0 In the case of D, the distance D between the plasma guns 7 becomes large, and even the distance between the film forming materials Ma (the furnace portion 20) becomes large, so that it is difficult to distribute the film thickness on the film formation object 11 with a uniform film thickness. Film formation is carried out.

Further, generally, the steering coil 48 is adjusted while observing the plasma beam P, whereby the plasma beam P is brought into contact with the film forming material Ma. However, this adjustment requires skillful techniques and the like, and may take a long time until the end of the adjustment, and adjustment will be difficult when the plasma gun 7 is plural. On the other hand, in the present embodiment, at least one of the plasma gun 7 and the film forming material Ma is provided to be relatively movable as described above, and the center position of the film forming material Ma is set to be able to be with respect to the emission axis PL of the plasma beam P. The relative movement is performed so that the plasma bundle P is irradiated to the film forming material Ma. Thereby, the plasma beam P can be accurately irradiated to the film forming material Ma with a simple and appropriate structure.

Further, there is a concern that the plasma bundle P becomes thin between the second plasma guns 7L and 7L. However, in actuality, ions can be absorbed between the valleys of the electric potential between the plasma beams P and P of the second plasma guns 7L and 7L, so that the decrease in the plasma density can be suppressed.

Incidentally, in the present embodiment, at least one of the plasma gun 7 and the film forming material Ma is configured to be relatively movable so that the center position of the film forming material Ma deviates from the emission axis PL of the plasma beam P. Alternatively, or in addition to this, the center position of the film forming material Ma may be preliminarily deviated from the emission axis PL of the plasma beam P.

[Refer to the embodiment]

Next, the plasma evaporation apparatus of the embodiment will be described with reference to Fig. 5. In the following, the differences from the above-described film forming apparatus 1 will be mainly described.

Fig. 5 is a schematic plan view showing the arrangement of a plasma gun in the film forming apparatus of the plasma evaporation apparatus according to the embodiment. As shown in Fig. 5, the film forming apparatus 100 of the embodiment differs in the arrangement of the plurality of plasma guns 7 from the film forming apparatus 1 (see Fig. 3).

Specifically, when viewed from the positive direction of the X-axis toward the negative direction of the X-axis (the direction opposite to the film forming material Ma), the plurality of plasma guns 7 are arranged in series at a predetermined interval in the Z-axis direction, and are arranged. The second plasma gun 7L is arranged on the right side when the injection direction is forward with respect to the first plasma gun 7R. In other words, the plurality of plasma guns 7 have a so-called RL arrangement structure, that is, the first plasma gun 7R and the second plasma gun 7L are arranged in this order from the left side when the emission direction is the front.

In the film forming apparatus 100 having such a configuration, one of the adjacent pairs of the film forming materials Ma is disposed close to each other. Specifically, when viewed from the positive X-axis direction toward the X-axis negative direction, the center position of the film forming material Ma (furnace portion 20) corresponding to the first plasma gun 7R is arranged to be opposed to the plasma beam. The injection axis PL of P is shifted by a predetermined distance dZ toward the second plasma gun 7L side in the Z-axis direction, and the center position of the film forming material Ma (furnace portion 20) corresponding to the second plasma gun 7L is arranged to be opposed to The emission axis PL of the plasma beam P is shifted by a predetermined distance dZ toward the first plasma gun 7R side in the Z-axis direction.

Similarly to the above-described film forming apparatus 1, the predetermined distance dZ can be set in accordance with the radius gyrations R and r so that the plasma beam P is irradiated onto the film forming material Ma, and can be set by the above (2). In addition, instead of or in addition to the film forming material Ma (the hearth portion 20), it may be configured to The first and second plasma guns 7R and 7L are deviated. Further, at least one of the plasma gun 7 and the film forming material Ma may be configured to be relatively movable in the same manner as the film forming apparatus 1 described above so that the center position of the film forming material Ma deviates from the emission axis PL of the plasma beam P. .

As described above, in the film forming apparatus 100 of the embodiment, even when the RL arrangement structure is provided, the center position of the film forming material Ma is arranged to be shifted from the emission axis PL of the plasma beam P so that the plasma beam P is irradiated to the film formation. The material Ma can accurately irradiate (contact) the plasma beam P to the film forming material Ma, and can appropriately evaporate the film forming material Ma and accurately and appropriately form a film on the film forming object 11.

The preferred embodiments of the present invention have been described above, but the present invention is not limited to the embodiments described above, and may be modified or applied to other inventions without departing from the spirit and scope of the invention.

For example, the film forming apparatus 1 of the above embodiment includes three plasma guns 7, but it may be provided in two or four or more. Further, in the film forming apparatus 1 of the above-described embodiment, the plurality of plasma guns 7 have a so-called LLR arrangement structure, but are not limited thereto. The plurality of plasma guns 7 may have the following arrangement structure when viewed from a direction opposite to the film forming material Ma.

In other words, when the three plasma guns 7 are provided, the second plasma gun 7L, the first plasma gun 7R, and the first plasma gun 7R may be arranged in parallel from the left side when the emission direction is the front side. Structure (so-called LRR configuration structure). For example, when two plasma guns 7 are provided, an arrangement structure (so-called LR arrangement structure) in which the second plasma gun 7L and the first plasma gun 7R are arranged in parallel may be provided. Further, for example, when four plasma guns 7 are provided, they may have LLLR configuration structure, LLRR configuration structure, and LRRR configuration structure. In short, it is sufficient that the second plasma gun 7L is not arranged in the right side when the emission direction is the front with respect to the first plasma gun 7R.

Further, in the above embodiment, the plasma evaporation device is applied to the film formation device 1, but the invention is not limited thereto. For example, the present invention can also be applied to a reduction device for separating an evaporation material as an evaporation material of an oxide such as magnesium oxide or aluminum oxide by a plasma beam in a chamber.

1‧‧‧ film forming device (plasma evaporation device)

7‧‧‧Plastic gun

7L‧‧‧2nd plasma gun

7R‧‧‧1st plasma gun

20‧‧‧Cylinder Department

48‧‧‧Steering coil

Ma‧‧‧ film forming material (evaporation material)

G‧‧‧ magnetic lines

P‧‧‧plasma beam

Claims (4)

A plasma evaporation device for evaporating evaporation material in a chamber, wherein the plasma evaporation device comprises a plurality of plasma guns for evaporating the evaporation material, and the plurality of plasma guns include: a first electricity a slurry gun having a direction of magnetic field lines in an emission direction of the plasma beam; and a second plasma gun having a direction of magnetic field lines in a direction opposite to an emission direction of the plasma beam, when viewed from a direction opposite to the evaporation material, The plasma guns are arranged side by side in the chamber, and the second plasma guns are not arranged on the right side when the emission direction is forward with respect to the first plasma gun. The plasma evaporating device according to claim 1, wherein the plurality of plasma guns are arranged side by side to satisfy a relationship of a steering coil under the formula (1) for controlling an emission direction of the plasma beam, among them, s is the diameter of the aforementioned steering coil, and D is the distance between the plurality of plasma guns. A plasma evaporation apparatus according to claim 1 or 2, wherein At least one of the plasma gun and the evaporation material is disposed such that a center position of the evaporation material is offset from an emission axis of the plasma beam. The plasma evaporating device according to claim 1 or 2, wherein at least one of the plasma gun and the evaporating material is disposed to be relatively movable so that a center position of the evaporating material is opposite to a plasma beam The exit axis is offset.