TWI582658B - Display device - Google Patents
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- TWI582658B TWI582658B TW104138431A TW104138431A TWI582658B TW I582658 B TWI582658 B TW I582658B TW 104138431 A TW104138431 A TW 104138431A TW 104138431 A TW104138431 A TW 104138431A TW I582658 B TWI582658 B TW I582658B
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Description
本揭露係有關於顯示裝置,且係有關於一種具有感測電極之觸控顯示裝置。 The disclosure relates to a display device and to a touch display device having a sensing electrode.
隨著科技不斷的進步,使得各種資訊設備不斷地推陳出新,例如手機、平板電腦、超輕薄筆電、及衛星導航等。除了一般以鍵盤或滑鼠輸入或操控之外,利用觸控式技術來操控資訊設備是一種相當直覺且受歡迎的操控方式。其中,觸控顯示裝置具有人性化及直覺化的輸入操作介面,使得任何年齡層的使用者都可直接以手指或觸控筆選取或操控資訊設備。 With the continuous advancement of technology, various information devices are constantly being introduced, such as mobile phones, tablet computers, ultra-thin notebooks, and satellite navigation. In addition to keyboard or mouse input or manipulation, the use of touch technology to manipulate information devices is a fairly intuitive and popular way to manipulate. Among them, the touch display device has a user-friendly and intuitive input operation interface, so that users of any age can directly select or manipulate the information device with a finger or a stylus.
其中一種觸控顯示裝置是於顯示面板(例如液晶顯示面板或有機發光二極體面板)內設置感測電極之內嵌式觸控(in cell touch)顯示裝置。然而,目前的內嵌式觸控顯示裝置並非各方面皆令人滿意。 One of the touch display devices is an in-cell touch display device in which a sensing electrode is disposed in a display panel (for example, a liquid crystal display panel or an organic light-emitting diode panel). However, current in-cell touch display devices are not satisfactory in all aspects.
因此,業界仍須一種可更進一步提升顯示及觸控品質之觸控顯示裝置。 Therefore, the industry still needs a touch display device that can further enhance the display and touch quality.
本揭露提供一種顯示裝置,包括:第一基板,第一基板包括:複數掃描線,設於第一基板上;複數資料線,設於第 一基板上,該些掃描線與該些資料線定義複數個次畫素;一感測電極,設於第一基板上並對應二個該些次畫素,該感測電極具有一開口,該開口對應該些掃描線其中之一或該些資料線其中之一設置;第二基板,相對第一基板設置;以及顯示介質,設於第一基板與第二基板之間。 The present disclosure provides a display device including: a first substrate, the first substrate includes: a plurality of scan lines disposed on the first substrate; and a plurality of data lines disposed at the first On a substrate, the scan lines and the data lines define a plurality of sub-pixels; a sensing electrode is disposed on the first substrate and corresponds to the two sub-pixels, the sensing electrode has an opening, The opening is disposed corresponding to one of the scan lines or one of the data lines; the second substrate is disposed opposite to the first substrate; and the display medium is disposed between the first substrate and the second substrate.
為讓本揭露之特徵、和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the features and advantages of the present disclosure more comprehensible, the preferred embodiments are described below, and are described in detail below with reference to the accompanying drawings.
50‧‧‧區域 50‧‧‧Area
100‧‧‧顯示裝置 100‧‧‧ display device
102‧‧‧第一基板 102‧‧‧First substrate
104‧‧‧掃描線 104‧‧‧ scan line
104A‧‧‧主軸部 104A‧‧‧Spindle Department
104AT‧‧‧上緣 104AT‧‧‧Upper edge
106‧‧‧資料線 106‧‧‧Information line
108‧‧‧次畫素 108‧‧‧ pixels
110‧‧‧薄膜電晶體 110‧‧‧film transistor
112‧‧‧感測電極 112‧‧‧Sensor electrode
112A‧‧‧感測電極 112A‧‧‧Sensor electrode
112AT‧‧‧上緣 112AT‧‧‧Upper edge
112B‧‧‧感測電極 112B‧‧‧Sensing electrode
112S‧‧‧次感測電極 112S‧‧‧ sensing electrodes
112S1‧‧‧次感測電極 112S1‧‧‧ sensing electrodes
112S2‧‧‧次感測電極 112S2‧‧‧ sensing electrodes
113‧‧‧積體電路連接區 113‧‧‧Integrated circuit connection area
114‧‧‧開口 114‧‧‧ openings
114A‧‧‧第一方向開口 114A‧‧‧First direction opening
114B‧‧‧第二方向開口 114B‧‧‧second direction opening
116‧‧‧連接部 116‧‧‧Connecting Department
118‧‧‧觸控訊號線 118‧‧‧Touch signal line
120‧‧‧通孔 120‧‧‧through hole
122‧‧‧基板 122‧‧‧Substrate
124‧‧‧閘極電極 124‧‧‧gate electrode
124T‧‧‧上緣 124T‧‧‧Upper edge
126‧‧‧閘極介電層 126‧‧ ‧ gate dielectric layer
128‧‧‧半導體層 128‧‧‧Semiconductor layer
130‧‧‧源極電極 130‧‧‧Source electrode
132‧‧‧汲極電極 132‧‧‧汲electrode
132S‧‧‧表面 132S‧‧‧ surface
134‧‧‧第一絕緣層 134‧‧‧first insulation
136‧‧‧平坦層 136‧‧‧flat layer
138‧‧‧第二絕緣層 138‧‧‧Second insulation
140‧‧‧第三絕緣層 140‧‧‧third insulation
140S‧‧‧表面 140S‧‧‧ surface
142‧‧‧通孔 142‧‧‧through hole
144‧‧‧畫素電極 144‧‧‧ pixel electrodes
148‧‧‧第二基板 148‧‧‧second substrate
150‧‧‧顯示介質 150‧‧‧Display media
152‧‧‧基板 152‧‧‧Substrate
154‧‧‧遮光層 154‧‧‧Lighting layer
156‧‧‧彩色濾光層 156‧‧‧Color filter layer
158‧‧‧平坦層 158‧‧‧flat layer
160‧‧‧間隔物 160‧‧‧ spacers
162‧‧‧連接部 162‧‧‧Connecting Department
164‧‧‧連接部 164‧‧‧Connecting Department
200‧‧‧顯示裝置 200‧‧‧ display device
300A‧‧‧顯示裝置 300A‧‧‧ display device
300B‧‧‧顯示裝置 300B‧‧‧ display device
300C‧‧‧顯示裝置 300C‧‧‧ display device
300D‧‧‧顯示裝置 300D‧‧‧ display device
300E‧‧‧顯示裝置 300E‧‧‧ display device
400‧‧‧顯示裝置 400‧‧‧ display device
500‧‧‧顯示裝置 500‧‧‧ display device
600‧‧‧顯示裝置 600‧‧‧ display device
700‧‧‧顯示裝置 700‧‧‧ display device
800‧‧‧顯示裝置 800‧‧‧ display device
900A‧‧‧顯示裝置 900A‧‧‧ display device
900B‧‧‧顯示裝置 900B‧‧‧ display device
2A-2A‧‧‧線段 2A-2A‧‧ ‧ line segment
5C-5C‧‧‧線段 5C-5C‧‧‧ segments
5D-5D‧‧‧線段 5D-5D‧‧‧ segments
6C-6C‧‧‧線段 6C-6C‧‧‧ line segment
6D-6D‧‧‧線段 6D-6D‧‧‧ segments
S1‧‧‧側邊 S1‧‧‧ side
S2‧‧‧側邊 S2‧‧‧ side
S3‧‧‧側邊 S3‧‧‧ side
S4‧‧‧側邊 S4‧‧‧ side
1B‧‧‧區域 1B‧‧‧Area
7B‧‧‧區域 7B‧‧‧Area
A1‧‧‧第一方向 A1‧‧‧ first direction
A2‧‧‧第二方向 A2‧‧‧ second direction
E1‧‧‧邊緣 Edge of E1‧‧
E2‧‧‧邊緣 E2‧‧‧ edge
E3‧‧‧邊緣 E3‧‧‧ edge
E4‧‧‧邊緣 E4‧‧‧ edge
W1‧‧‧寬度 W1‧‧‧Width
W2‧‧‧寬度 W2‧‧‧Width
GS1‧‧‧第一間距 GS1‧‧‧first spacing
GS2‧‧‧第二間距 GS2‧‧‧second spacing
CS‧‧‧交錯部 CS‧‧‧Interlace
S5‧‧‧第一間隔 S5‧‧‧ first interval
S6‧‧‧第二間隔 S6‧‧‧Second interval
HS1‧‧‧第一部分 HS1‧‧‧Part I
VH1‧‧‧第二部分 VH1‧‧‧ Part II
VS1‧‧‧第二部分 VS1‧‧‧ Part II
HS2‧‧‧第三部分 HS2‧‧‧Part III
VS2‧‧‧第四部分 VS2‧‧‧Part IV
第1A圖係本揭露實施例之顯示裝置之上視圖。 Figure 1A is a top plan view of a display device of the disclosed embodiment.
第1B圖係第1A圖之顯示裝置之部分放大圖。 Fig. 1B is a partially enlarged view of the display device of Fig. 1A.
第2A圖係沿著第1B圖之線段2A-2A所繪製之剖面圖。 Figure 2A is a cross-sectional view taken along line 2A-2A of Figure 1B.
第2B圖係本揭露另一實施例之剖面圖。 Figure 2B is a cross-sectional view of another embodiment of the present disclosure.
第3A圖係本揭露另一實施例之上視圖。 Figure 3A is a top view of another embodiment of the present disclosure.
第3B圖係本揭露另一實施例之上視圖。 Figure 3B is a top view of another embodiment of the present disclosure.
第3C圖係本揭露另一實施例之上視圖。 Figure 3C is a top view of another embodiment of the present disclosure.
第3D圖係本揭露另一實施例之上視圖。 Figure 3D is a top view of another embodiment of the present disclosure.
第3E圖係本揭露另一實施例之上視圖。 Figure 3E is a top view of another embodiment of the present disclosure.
第4圖係本揭露另一實施例之上視圖。 Figure 4 is a top view of another embodiment of the present disclosure.
第5A圖係第4圖之顯示裝置之部分放大圖及上視圖。 Fig. 5A is a partial enlarged view and a top view of the display device of Fig. 4.
第5B圖係第4圖之顯示裝置之部分放大圖及下視圖。 Fig. 5B is a partial enlarged view and a bottom view of the display device of Fig. 4.
第5C圖係沿著第5A-5B圖之線段5C-5C所繪製之剖面圖。 Figure 5C is a cross-sectional view taken along line 5C-5C of Figure 5A-5B.
第5D圖係沿著第5A-5B圖之線段5D-5D所繪製之剖面圖。 Figure 5D is a cross-sectional view taken along line 5D-5D of Figure 5A-5B.
第6A圖係本揭露另一實施例之上視圖。 Figure 6A is a top view of another embodiment of the present disclosure.
第6B圖係本揭露另一實施例之下視圖。 Figure 6B is a bottom view of another embodiment of the present disclosure.
第6C圖係沿著第6A-6B圖之線段6C-6C所繪製之剖面圖。 Figure 6C is a cross-sectional view taken along line 6C-6C of Figure 6A-6B.
第6D圖係沿著第6A-6B圖之線段6D-6D所繪製之剖面圖。 Figure 6D is a cross-sectional view taken along line 6D-6D of Figures 6A-6B.
第7A圖係本揭露另一實施例之上視圖。 Figure 7A is a top view of another embodiment of the present disclosure.
第7B圖係第7A圖之顯示裝置之部分放大圖。 Fig. 7B is a partially enlarged view of the display device of Fig. 7A.
第8A圖係本揭露另一實施例之上視圖。 Figure 8A is a top view of another embodiment of the present disclosure.
第8B圖係第8A圖之顯示裝置之部分放大圖。 Fig. 8B is a partially enlarged view of the display device of Fig. 8A.
第8C圖係第8A圖之顯示裝置之部分放大圖。 Fig. 8C is a partially enlarged view of the display device of Fig. 8A.
第9A圖係本揭露另一實施例之上視圖。 Figure 9A is a top view of another embodiment of the present disclosure.
第9B圖係本揭露另一實施例之上視圖。 Figure 9B is a top view of another embodiment of the present disclosure.
以下針對本揭露之顯示裝置作詳細說明。應了解的是,以下之敘述提供許多不同的實施例或例子,用以實施本揭露之不同樣態。以下所述特定的元件及排列方式僅為簡單清楚描述本揭露。當然,這些僅用以舉例而非本揭露之限定。此外,在不同實施例中可能使用重複的標號或標示。這些重複僅為了簡單清楚地敘述本揭露,不代表所討論之不同實施例及/或結構之間具有任何關連性。再者,當述及一第一材料層位於一第二材料層上或之上時,包括第一材料層與第二材料層直接接觸之情形。或者,亦可能間隔有一或更多其它材料層之情形,在此情形中,第一材 料層與第二材料層之間可能不直接接觸。 The display device of the present disclosure will be described in detail below. It will be appreciated that the following description provides many different embodiments or examples for implementing the various aspects of the disclosure. The specific elements and arrangements described below are merely illustrative of the disclosure. Of course, these are only used as examples and not as a limitation of the disclosure. Moreover, repeated numbers or labels may be used in different embodiments. These repetitions are merely for the purpose of simplicity and clarity of the disclosure, and are not intended to be a limitation of the various embodiments and/or structures discussed. Furthermore, when a first material layer is on or above a second material layer, the first material layer is in direct contact with the second material layer. Or, it is also possible to have one or more layers of other materials in between, in this case, the first material There may be no direct contact between the layer of material and the second layer of material.
必需了解的是,圖式之元件或裝置可以此技術人士所熟知之各種形式存在。此外,當某層在其它層或基板「上」時,有可能是指「直接」在其它層或基板上,或指某層在其它層或基板上,或指其它層或基板之間夾設其它層。 It must be understood that the elements or devices of the drawings may be in various forms well known to those skilled in the art. In addition, when a layer is "on" another layer or substrate, it may mean "directly" on another layer or substrate, or a layer on another layer or substrate, or between other layers or substrates. Other layers.
此外,實施例中可能使用相對性的用語,例如「較低」或「底部」及「較高」或「頂部」,以描述圖式的一個元件對於另一元件的相對關係。能理解的是,如果將圖式的裝置翻轉使其上下顛倒,則所敘述在「較低」側的元件將會成為在「較高」側的元件。 In addition, relative terms such as "lower" or "bottom" and "higher" or "top" may be used in the embodiments to describe the relative relationship of one element of the drawing to another. It will be understood that if the device of the drawing is flipped upside down, the component described on the "lower" side will become the component on the "higher" side.
在此,「約」、「大約」、「大抵」之用語通常表示在一給定值或範圍的20%之內,較佳是10%之內,且更佳是5%之內,或3%之內,或2%之內,或1%之內,或0.5%之內。在此給定的數量為大約的數量,亦即在沒有特定說明「約」、「大約」、「大抵」的情況下,仍可隱含「約」、「大約」、「大抵」之含義。 Here, the terms "about", "about" and "major" generally mean within 20% of a given value or range, preferably within 10%, and more preferably within 5%, or 3 Within %, or within 2%, or within 1%, or within 0.5%. The quantity given here is an approximate quantity, that is, in the absence of specific descriptions of "about", "about" and "major", the meanings of "about", "about" and "major" may still be implied.
能理解的是,雖然在此可使用用語「第一」、「第二」、「第三」等來敘述各種元件、組成成分、區域、層、及/或部分,這些元件、組成成分、區域、層、及/或部分不應被這些用語限定,且這些用語僅是用來區別不同的元件、組成成分、區域、層、及/或部分。因此,以下討論的一第一元件、組成成分、區域、層、及/或部分可在不偏離本揭露之教示的情況下被稱為一第二元件、組成成分、區域、層、及/或部分。 It will be understood that the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, and/or portions, such elements, components, and regions. The layers, and/or portions are not to be limited by the terms, and the terms are used to distinguish different elements, components, regions, layers, and/or parts. Therefore, a first element, component, region, layer, and/or portion discussed below may be referred to as a second element, component, region, layer, and/or without departing from the teachings of the disclosure. section.
除非另外定義,在此使用的全部用語(包括技術及科學用語)具有與此篇揭露所屬之一般技藝者所通常理解的相同涵 義。能理解的是這些用語,例如在通常使用的字典中定義的用語,應被解讀成具有一與相關技術及本揭露的背景或上下文一致的意思,而不應以一理想化或過度正式的方式解讀,除非在此特別定義。 Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by the ordinary skill of the disclosure. Righteousness. It will be understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the context or context of the present disclosure, and should not be in an idealized or overly formal manner. Interpretation, unless specifically defined herein.
本揭露實施例可配合圖式一併理解,本揭露之圖式亦被視為揭露說明之一部分。需了解的是,本揭露之圖式並未以實際裝置及元件之比例繪示。在圖式中可能誇大實施例的形狀與厚度以便清楚表現出本揭露之特徵。此外,圖式中之結構及裝置係以示意之方式繪示,以便清楚表現出本揭露之特徵。 The embodiments of the present disclosure can be understood in conjunction with the drawings, and the drawings of the present disclosure are also considered as part of the disclosure. It should be understood that the drawings of the present disclosure are not shown in the form of actual devices and components. The shapes and thicknesses of the embodiments may be exaggerated in the drawings in order to clearly illustrate the features of the present disclosure. In addition, the structures and devices in the drawings are schematically illustrated in order to clearly illustrate the features of the disclosure.
在本揭露中,相對性的用語例如「下」、「上」、「水平」、「垂直」、「之下」、「之上」、「頂部」、「底部」等等應被理解為該段以及相關圖式中所繪示的方位。此相對性的用語僅是為了方便說明之用,其並不代表其所敘述之裝置需以特定方位來製造或運作。而關於接合、連接之用語例如「連接」、「互連」等,除非特別定義,否則可指兩個結構係直接接觸,或者亦可指兩個結構並非直接接觸,其中有其它結構設於此兩個結構之間。且此關於接合、連接之用語亦可包括兩個結構都可移動,或者兩個結構都固定之情況。 In this disclosure, relative terms such as "lower", "upper", "horizontal", "vertical", "lower", "above", "top", "bottom", etc. shall be understood as The orientation shown in the paragraph and related schemas. This relative term is used for convenience of description only, and does not mean that the device described therein is to be manufactured or operated in a particular orientation. Terms such as "joining" and "interconnecting", etc., unless otherwise defined, may mean that two structures are in direct contact, or that two structures are not in direct contact, and other structures are provided here. Between the two structures. The term "joining and joining" may also include the case where both structures are movable or both structures are fixed.
應注意的是,在後文中「基板」一詞可指基板本身,或是包括已形成各式元件、各式電路及各種膜層於基板上的複合體,此處為了簡化圖式,僅以平整的基板表示之。此外,「基板表面」係包括基板最上方且暴露之膜層,例如一玻璃表面或一有機高分子表面、一絕緣層及/或金屬線。基板本身材質可以是玻璃、有機高分子、無機高分子、矽、金屬...等。 It should be noted that the term "substrate" may be used herein to refer to the substrate itself or a composite body in which various elements, various circuits, and various film layers have been formed on the substrate. Here, in order to simplify the drawing, only A flat substrate indicates this. Further, the "substrate surface" includes the uppermost and exposed film layer of the substrate, such as a glass surface or an organic polymer surface, an insulating layer and/or a metal wire. The material of the substrate itself may be glass, organic polymer, inorganic polymer, bismuth, metal, or the like.
在顯示裝置中,感測電極內及感測電極邊緣所處之電場環境不同,故感測電極內及感測電極邊緣兩處與其它元件所形成之電容亦不同,可能會造成顯示裝置漏光及顯示品質下降。此外,感測電極若與閘極線、資料線或觸控訊號線重疊,會有寄生電容的產生。因此,感測電極的形狀與大小設計,將會影響寄生電容在感測電極內及感測電極邊緣的數值大小,使其數值在二處產生差異,而造成電極間訊號的串擾(cross-talk),進而影響影像及觸控性能。 In the display device, the electric field environment in the sensing electrode and the edge of the sensing electrode is different, so the capacitance formed in the sensing electrode and the edge of the sensing electrode and other components are different, which may cause light leakage of the display device and The display quality is degraded. In addition, if the sensing electrode overlaps with the gate line, the data line, or the touch signal line, parasitic capacitance may occur. Therefore, the shape and size design of the sensing electrode will affect the value of the parasitic capacitance in the sensing electrode and the edge of the sensing electrode, causing the difference between the two values to cause crosstalk between the electrodes (cross-talk). ), which in turn affects image and touch performance.
本揭露實施例係使感測電極內及感測電極邊緣於相似之電場環境,故可使感測電極內及感測電極邊緣與其它元件所形成之電容亦相似,降低顯示裝置之漏光並提升顯示品質。此外,亦可使感測電極與掃描線、資料線或觸控訊號線之間的寄生電容降低,以提升影像及觸控性能。 In the embodiment, the sensing electrode and the sensing electrode edge are in a similar electric field environment, so that the capacitance formed in the sensing electrode and the sensing electrode edge and other components are similar, thereby reducing the light leakage of the display device and improving Display quality. In addition, the parasitic capacitance between the sensing electrode and the scan line, the data line or the touch signal line can be reduced to improve image and touch performance.
第1A圖係本揭露實施例之顯示裝置100之第一基板102之上視圖。第1B圖係第1A圖之顯示裝置100之第一基板102於區域1B之部分放大圖。參見第1A-1B圖,第一基板102包括沿第一方向A1延伸之複數平行之掃描線(閘極線)104,以及與此掃描線104交會沿第二方向A2沿伸之複數平行之資料線(源極線)106。第一方向A1及第二方向A2彼此可呈大抵垂直(perpendicular)或正交(orthogonal),易言之,第一方向A1可以是座標系之X軸而第二方向A2則是Y軸,但第一方向A1及第二方向A2亦可彼此呈非垂直或非正交,其夾角不等於90度。此外,掃描線104與資料線106皆設於第一基板102上。 FIG. 1A is a top view of the first substrate 102 of the display device 100 of the embodiment. Fig. 1B is an enlarged view of a portion of the first substrate 102 of the display device 100 of Fig. 1A in a region 1B. Referring to FIGS. 1A-1B, the first substrate 102 includes a plurality of parallel scan lines (gate lines) 104 extending in the first direction A1, and a data line parallel to the scan line 104 extending along the second direction A2. (Source line) 106. The first direction A1 and the second direction A2 may be perpendicular or orthogonal to each other. In other words, the first direction A1 may be the X axis of the coordinate system and the second direction A2 is the Y axis, but The first direction A1 and the second direction A2 may also be non-perpendicular or non-orthogonal to each other, and the included angle is not equal to 90 degrees. In addition, the scan line 104 and the data line 106 are both disposed on the first substrate 102.
此外,多條掃描線104與多條資料線106共同定義出 複數個次畫素108(sub-pixel),第一基板102可包括複數次畫素108,且第一基板102更包括對應次畫素108設置之複數薄膜電晶體110,薄膜電晶體110其中兩端點分別電性連接掃描線104及資料線106,如第1B圖所示。複數次畫素108可形成一畫素(pixel)。 In addition, a plurality of scan lines 104 are defined together with a plurality of data lines 106. A plurality of sub-pixels 108, the first substrate 102 may include a plurality of pixels 108, and the first substrate 102 further includes a plurality of thin film transistors 110 corresponding to the sub-pixels 108, two of the thin film transistors 110 The end points are electrically connected to the scan line 104 and the data line 106, respectively, as shown in FIG. 1B. The plurality of pixels 108 can form a pixel.
上述資料線106係透過薄膜電晶體110提供源極訊號至次畫素108,而此掃描線(閘極線)104係透過薄膜電晶體110提供掃描脈衝訊號至次畫素108,並配合上述源極訊號一同控制次畫素108。 The data line 106 provides a source signal to the sub-pixel 108 through the thin film transistor 110, and the scan line (gate line) 104 transmits a scan pulse signal to the sub-pixel 108 through the thin film transistor 110, and cooperates with the source. The polar signal controls the sub-pixel 108 together.
繼續參見第1A-1B圖,第一基板102更包括設於第一基板102上之多個感測電極112,該些感測電極112覆蓋複數次畫素108,於此實施例中,感測電極112覆蓋四個次畫素108。感測電極112之間具有沿第一方向A1延伸的第一間隔S5,以及沿第二方向A2延伸的第二間隔S6。感測電極112彼此之間於第二方向A2具有第一間距GS1,也就是第一間隔G1於第二方向A2的短邊寬度。感測電極112彼此之間於第一方向A1具有第二間距GS2,也就是第二間隔G2於第一方向A1的短邊寬度。第一間隔S5對應部分掃描線104設置,第二間隔S6對應部分資料線106設置。第一間隔S5與第二間隔S6彼此重疊部分為複數交錯部CS,交錯部CS對應於掃描線104及資料線106重疊部分。此實施例中,第一間距GS1及第二間距GS2的寬度相同,於其他實施例中,第一間距GS1及第二間距GS2的寬度可不相同。 Continuing to refer to FIG. 1A-1B, the first substrate 102 further includes a plurality of sensing electrodes 112 disposed on the first substrate 102. The sensing electrodes 112 cover the plurality of pixels 108. In this embodiment, the sensing is performed. The electrode 112 covers four sub-pixels 108. The sensing electrodes 112 have a first interval S5 extending along the first direction A1 and a second interval S6 extending along the second direction A2. The sensing electrodes 112 have a first pitch GS1 with respect to each other in the second direction A2, that is, a short side width of the first interval G1 in the second direction A2. The sensing electrodes 112 have a second pitch GS2 with respect to each other in the first direction A1, that is, a short side width of the second interval G2 in the first direction A1. The first interval S5 is set corresponding to the partial scan line 104, and the second interval S6 is set corresponding to the partial data line 106. The portion where the first interval S5 and the second interval S6 overlap each other is a complex interleave CS, and the interleave portion CS corresponds to a portion where the scanning line 104 and the data line 106 overlap. In this embodiment, the widths of the first pitch GS1 and the second pitch GS2 are the same. In other embodiments, the widths of the first pitch GS1 and the second pitch GS2 may be different.
至少一感測電極112具有開口114(opening),此開口114對應部分掃描線104或部分資料線106設置。開口114位於感測電極112範圍內,開口114對應之部分掃描線104或部分資料線106 係第一間隔S5未對應的部分掃描線104或第二間隔S6未對應的部分資料線106。於此實施例中,開口114可為第一間隔S5於非CS部分,並朝向第二方向A2之延伸支幹部分,或是為第二間隔S6於非CS部分,並朝向第一方向A1之延伸支幹部分。於其他實施例中,開口114可位於感測電極112內,而與第一間隔S5及第二間隔S6無連接部分。 The at least one sensing electrode 112 has an opening 114 corresponding to a portion of the scan line 104 or a portion of the data line 106. The opening 114 is located in the range of the sensing electrode 112, and the portion 114 of the opening 114 corresponds to the scanning line 104 or part of the data line 106. It is a partial scan line 104 that does not correspond to the first interval S5 or a partial data line 106 that does not correspond to the second interval S6. In this embodiment, the opening 114 may be the first interval S5 in the non-CS portion and extend toward the extension of the second direction A2, or the second interval S6 in the non-CS portion, and toward the first direction A1. Extend the branch. In other embodiments, the opening 114 can be located within the sensing electrode 112 without a connection portion with the first spacing S5 and the second spacing S6.
由於感測電極112重疊掃描線104或資料線106,因此產生的電容,與感測電極112邊緣及掃描線104或資料線106之間所產生的電容不同。本揭露實施例藉由開口114對應掃描線104或資料線106設置,可使感測電極112內之大部分區域避開掃描線104或資料線106所在之處,使得感測電極112內之大部分區域及感測電極112邊緣處於相似之電場環境,藉此可使感測電極112內及感測電極112邊緣與其它元件所形成之電容亦相似,降低顯示裝置100之漏光並提升顯示品質。另一方面,由於減少了感測電極112與掃描線104或資料線106重疊的部分,因此降低了感測電極112與掃描線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。 Since the sensing electrode 112 overlaps the scan line 104 or the data line 106, the capacitance generated is different from the capacitance generated between the edge of the sensing electrode 112 and the scan line 104 or the data line 106. The embodiment of the present disclosure is such that the opening 114 corresponds to the scan line 104 or the data line 106, so that most of the area in the sensing electrode 112 can be avoided where the scan line 104 or the data line 106 is located, so that the sensing electrode 112 is large. The portion of the region and the edge of the sensing electrode 112 are in a similar electric field environment, so that the capacitance formed in the sensing electrode 112 and the edge of the sensing electrode 112 and other components are similar, which reduces the light leakage of the display device 100 and improves the display quality. On the other hand, since the portion where the sensing electrode 112 overlaps the scan line 104 or the data line 106 is reduced, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or the data line 106 is reduced, and the image of the product can be improved. Touch performance.
詳細而言,參見第1A-1B圖,至少一感測電極112可具有多個次感測電極(sub-sensing electrode)112S及連接部116,此多個次感測電極112S係藉由開口114隔開,並藉由連接部116彼此電性連接。 In detail, referring to FIG. 1A-1B , at least one sensing electrode 112 may have a plurality of sub-sensing electrodes 112S and a connecting portion 116 , and the plurality of sub sensing electrodes 112S are through the opening 114 . They are separated and electrically connected to each other by the connecting portion 116.
此外,連接部116可設於例如四個彼此相鄰之次感測電極112S之中央區。例如,在此實施例中,感測電極112係由四個彼此相鄰之次感測電極112S組成,而連接部116係設於此四個彼此 相鄰之次感測電極112S之中央區。此外,在此實施例中,每一個次感測電極112S對應一個次畫素108設置。 Further, the connecting portion 116 may be provided, for example, in a central region of four adjacent sensing electrodes 112S adjacent to each other. For example, in this embodiment, the sensing electrode 112 is composed of four secondary sensing electrodes 112S adjacent to each other, and the connecting portion 116 is provided to the four mutual ones. The central region of the adjacent secondary sensing electrode 112S. Further, in this embodiment, each of the secondary sensing electrodes 112S corresponds to one sub-pixel 108 setting.
除了連接部116以外,感測電極112內對應掃描線104及/或資料線106之區域皆設有開口114。藉此可使感測電極112內之大部分區域及感測電極112邊緣與掃描線104或資料線106之間所形成的電場環境相似,藉此可使感測電極112內及感測電極112邊緣與其它元件所形成之電容亦相似,降低顯示裝置100之漏光並提升顯示品質。另一方面,由於減少了感測電極112與掃描線104或資料線106重疊的部分,因此降低了感測電極112與掃描線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。其中,本揭露實施例具有開口114之感測電極112的面積,約為不具開口114的感測電極112面積的50%~90%。易言之,感測電極112面積與開口114之面積的比值在1~9之間。 In addition to the connecting portion 116, the region of the sensing electrode 112 corresponding to the scanning line 104 and/or the data line 106 is provided with an opening 114. Thereby, most of the area in the sensing electrode 112 and the edge of the sensing electrode 112 are similar to the electric field environment formed between the scanning line 104 or the data line 106, thereby enabling the sensing electrode 112 and the sensing electrode 112. The capacitance formed by the edge and other components is also similar, which reduces light leakage of the display device 100 and improves display quality. On the other hand, since the portion where the sensing electrode 112 overlaps the scan line 104 or the data line 106 is reduced, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or the data line 106 is reduced, and the image of the product can be improved. Touch performance. The embodiment of the present disclosure has an area of the sensing electrode 112 having an opening 114 of about 50% to 90% of the area of the sensing electrode 112 having no opening 114. In other words, the ratio of the area of the sensing electrode 112 to the area of the opening 114 is between 1 and 9.
此外,第一基板102更包括觸控訊號線118,此觸控訊號線118之一端藉由通孔120電性連接感測電極112,而另一端係電性連接至積體電路連接區(IC bonding region)113。其中,觸控訊號線118的位置不以第1A-1B圖為限,其也可設置在資料線106之上。 In addition, the first substrate 102 further includes a touch signal line 118. One end of the touch signal line 118 is electrically connected to the sensing electrode 112 through the through hole 120, and the other end is electrically connected to the integrated circuit connection area (IC). Bonding region) 113. The position of the touch signal line 118 is not limited to the 1A-1B map, and may also be disposed on the data line 106.
應注意的是,除上述第1A-1B圖所示之實施例以外,本揭露之一個感測電極亦可包括其它數量之次感測電極。故本揭露之範圍並不以第1A-1B圖所示之實施例為限。此外,第1A-1B圖所繪示的連接部116與次感測電極112S可依實際需求於同一程序或不同程序完成,其中所使用的材料可彼此相同或不同。 It should be noted that in addition to the embodiments shown in Figures 1A-1B above, one of the sensing electrodes of the present disclosure may also include other numbers of secondary sensing electrodes. Therefore, the scope of the disclosure is not limited to the embodiment shown in Figures 1A-1B. In addition, the connecting portion 116 and the sub-sensing electrode 112S illustrated in FIG. 1A-1B may be completed in the same program or different procedures according to actual needs, and the materials used may be the same or different from each other.
此外,需注意的是,為了清楚描述本揭露,上述第 1A-1B圖中並未繪示後續之畫素電極。 In addition, it should be noted that in order to clearly describe the disclosure, the above Subsequent pixel electrodes are not shown in Figures 1A-1B.
參見第2A圖,該圖係沿著第1B圖之線段2A-2A所繪製之剖面圖。如第2A圖所示,第一基板102可包括一基板122,此基板122可包括透明基板,例如為玻璃基板、陶瓷基板、塑膠基板或其它任何適合之基板。而薄膜電晶體110包括設於此基板122上之閘極電極124,以及設於閘極電極124及基板122上之閘極介電層126。此閘極電極124係自掃描線104延第二方向A2延伸而出。 Referring to Figure 2A, the figure is a cross-sectional view taken along line 2A-2A of Figure 1B. As shown in FIG. 2A, the first substrate 102 can include a substrate 122, which can include a transparent substrate, such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable substrate. The thin film transistor 110 includes a gate electrode 124 disposed on the substrate 122, and a gate dielectric layer 126 disposed on the gate electrode 124 and the substrate 122. The gate electrode 124 extends from the scan line 104 in the second direction A2.
此閘極電極124可為非晶矽、複晶矽、一或多種金屬、金屬氮化物、導電金屬氧化物、或上述之組合。上述金屬可包括但不限於鉬(molybdenum)、鎢(tungsten)、鈦(titanium)、鉭(tantalum)、鉑(platinum)或鉿(hafnium)。上述金屬氮化物可包括但不限於氮化鉬(molybdenum nitride)、氮化鎢(tungsten nitride)、氮化鈦(titanium nitride)以及氮化鉭(tantalum nitride)。上述導電金屬氧化物可包括但不限於釕金屬氧化物(ruthenium oxide)以及銦錫金屬氧化物(indium tin oxide)。此閘極電極124可藉由前述之化學氣相沉積法(CVD)、濺鍍法、電阻加熱蒸鍍法、電子束蒸鍍法、或其它任何適合的沈積方式形成,例如,在一實施例中,可用低壓化學氣相沈積法(LPCVD)在525~650℃之間沈積而製得非晶矽導電材料層或複晶矽導電材料層,其厚度範圍可為約1000Å至約10000Å。 The gate electrode 124 can be an amorphous germanium, a germanium germanium, one or more metals, a metal nitride, a conductive metal oxide, or a combination thereof. The above metals may include, but are not limited to, molybdenum, tungsten, titanium, tantalum, platinum or hafnium. The above metal nitrides may include, but are not limited to, molybdenum nitride, tungsten nitride, titanium nitride, and tantalum nitride. The above conductive metal oxide may include, but is not limited to, ruthenium oxide and indium tin oxide. The gate electrode 124 can be formed by the aforementioned chemical vapor deposition (CVD), sputtering, resistance heating evaporation, electron beam evaporation, or any other suitable deposition method, for example, in an embodiment. The amorphous germanium conductive material layer or the polycrystalline germanium conductive material layer may be deposited by low pressure chemical vapor deposition (LPCVD) at a temperature between 525 and 650 ° C, and may have a thickness ranging from about 1000 Å to about 10000 Å.
此閘極介電層126可為氧化矽、氮化矽、氮氧化矽、高介電常數(high-k)介電材料、或其它任何適合之介電材料、或上述之組合。此高介電常數(high-k)介電材料之材料可為金屬氧化物、金屬氮化物、金屬矽化物、過渡金屬氧化物、過渡金屬氮化物、 過渡金屬矽化物、金屬的氮氧化物、金屬鋁酸鹽、鋯矽酸鹽、鋯鋁酸鹽。例如,此高介電常數(high-k)介電材料可為LaO、AlO、ZrO、TiO、Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfO2、HfO3、HfZrO、HfLaO、HfSiO、HfSiON、LaSiO、AlSiO、HfTaO、HfTiO、HfTaTiO、HfAlON、(Ba,Sr)TiO3(BST)、Al2O3、其它適當材料之其它高介電常數介電材料、或上述組合。此閘極介電層126可藉由化學氣相沉積法(CVD)或旋轉塗佈法形成,此化學氣相沉積法例如可為低壓化學氣相沉積法(low pressure chemical vapor deposition,LPCVD)、低溫化學氣相沉積法(low temperature chemical vapor deposition,LTCVD)、快速升溫化學氣相沉積法(rapid thermal chemical vapor deposition,RTCVD)、電漿輔助化學氣相沉積法(plasma enhanced chemical vapor deposition,PECVD)、原子層化學氣相沉積法之原子層沉積法(atomic layer deposition,ALD)或其它常用的方法。 The gate dielectric layer 126 can be tantalum oxide, tantalum nitride, hafnium oxynitride, a high-k dielectric material, or any other suitable dielectric material, or a combination thereof. The material of the high-k dielectric material may be a metal oxide, a metal nitride, a metal halide, a transition metal oxide, a transition metal nitride, a transition metal telluride, a metal oxynitride, Metal aluminate, zirconium silicate, zirconium aluminate. For example, the high-k dielectric material may be LaO, AlO, ZrO, TiO, Ta 2 O 5 , Y 2 O 3 , SrTiO 3 (STO), BaTiO 3 (BTO), BaZrO, HfO. 2 , HfO 3 , HfZrO, HfLaO, HfSiO, HfSiON, LaSiO, AlSiO, HfTaO, HfTiO, HfTaTiO, HfAlON, (Ba, Sr)TiO 3 (BST), Al 2 O 3 , other high dielectric constants of other suitable materials Dielectric material, or a combination of the above. The gate dielectric layer 126 can be formed by chemical vapor deposition (CVD) or spin coating. The chemical vapor deposition method can be, for example, low pressure chemical vapor deposition (LPCVD). Low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD) Atomic layer deposition (ALD) or other commonly used methods of atomic layer chemical vapor deposition.
薄膜電晶體110更包括設於閘極介電層126上之半導體層128,此半導體層128與閘極電極124重疊,且薄膜電晶體110之源極電極130與汲極電極132係分別設於半導體層128之兩側,且分別與半導體層128兩側之部分重疊。此外,此源極電極130則為資料線106之部分。 The thin film transistor 110 further includes a semiconductor layer 128 disposed on the gate dielectric layer 126. The semiconductor layer 128 overlaps the gate electrode 124, and the source electrode 130 and the drain electrode 132 of the thin film transistor 110 are respectively disposed on Both sides of the semiconductor layer 128 are overlapped with portions of both sides of the semiconductor layer 128, respectively. In addition, the source electrode 130 is part of the data line 106.
此半導體層128可包括元素半導體,包括矽、鍺(germanium);化合物半導體,包括氮化鎵(gallium nitride,GaN)、碳化矽(silicon carbide)、砷化鎵(gallium arsenide)、磷化鎵(gallium phosphide)、磷化銦(indium phosphide)、砷化銦(indium arsenide)及/或銻化銦(indium antimonide);合金半導體,包括矽鍺合金 (SiGe)、磷砷鎵合金(GaAsP)、砷鋁銦合金(AlInAs)、砷鋁鎵合金(AlGaAs)、砷銦鎵合金(GaInAs)、磷銦鎵合金(GaInP)及/或磷砷銦鎵合金(GaInAsP)或上述材料之組合。 The semiconductor layer 128 may include an elemental semiconductor including germanium, germanium; a compound semiconductor including gallium nitride (GaN), silicon carbide, gallium arsenide, gallium phosphide ( Gallium phosphide), indium phosphide, indium arsenide and/or indium antimonide; alloy semiconductors including niobium alloys (SiGe), phosphorus gallium arsenide alloy (GaAsP), arsenic aluminum indium alloy (AlInAs), arsenic aluminum gallium alloy (AlGaAs), arsenic gallium alloy (GaInAs), indium gallium alloy (GaInP) and/or phosphorus arsenide gallium nitride Alloy (GaInAsP) or a combination of the above materials.
上述源極電極130與汲極電極132之材料可包括銅、鋁、鉬、鎢、金、鉻、鎳、鉑、鈦、銥、銠、上述之合金、上述之組合或其它導電性佳的金屬材料,例如可為鉬鋁鉬(Mo/Al/Mo)或鈦鋁鈦(Ti/Al/Ti)之三層結構。於其它實施例中,上述源極電極130與汲極電極132之材料可為一非金屬材料,只要使用之材料具有導電性即可。此源極電極130與汲極電極132之材料可藉由前述之化學氣相沉積法(CVD)、濺鍍法、電阻加熱蒸鍍法、電子束蒸鍍法、或其它任何適合的沉積方式形成。在一些實施例中,上述源極電極130與汲極電極132之材料可相同,且可藉由同一道沈積步驟形成。然而,在其它實施例中,上述源極電極130與汲極電極132亦可藉由不同之沈積步驟形成,且其材料可彼此不同。 The material of the source electrode 130 and the drain electrode 132 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, niobium, tantalum, the above alloy, the above combination or other conductive metal. The material may be, for example, a three-layer structure of molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/Al/Ti). In other embodiments, the material of the source electrode 130 and the drain electrode 132 may be a non-metal material as long as the material used has conductivity. The material of the source electrode 130 and the drain electrode 132 may be formed by the aforementioned chemical vapor deposition (CVD), sputtering, resistance heating evaporation, electron beam evaporation, or any other suitable deposition method. . In some embodiments, the material of the source electrode 130 and the drain electrode 132 may be the same and may be formed by the same deposition step. However, in other embodiments, the source electrode 130 and the drain electrode 132 may be formed by different deposition steps, and the materials thereof may be different from each other.
繼續參見第2A圖,第一基板102更包括覆蓋薄膜電晶體110與閘極介電層126之第一絕緣層134。此第一絕緣層134可為氮化矽、二氧化矽、或氮氧化矽。第一絕緣層134可藉由化學氣相沉積法(CVD)或旋轉塗佈法形成,此化學氣相沉積法例如可為低壓化學氣相沉積法(low pressure chemical vapor deposition,LPCVD)、低溫化學氣相沉積法(low temperature chemical vapor deposition,LTCVD)、快速升溫化學氣相沉積法(rapid thermal chemical vapor deposition,RTCVD)、電漿輔助化學氣相沉積法(plasma enhanced chemical vapor deposition,PECVD)、原子層化學氣相沉積法之原子層沉積法(atomic layer deposition,ALD)或其 它常用的方法。 Continuing to refer to FIG. 2A, the first substrate 102 further includes a first insulating layer 134 covering the thin film transistor 110 and the gate dielectric layer 126. The first insulating layer 134 may be tantalum nitride, hafnium oxide, or hafnium oxynitride. The first insulating layer 134 can be formed by chemical vapor deposition (CVD) or spin coating. The chemical vapor deposition method can be, for example, low pressure chemical vapor deposition (LPCVD), low temperature chemistry. Low temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), atom Atomic layer deposition (ALD) of layer chemical vapor deposition It is a commonly used method.
於本實施例中,上述觸控訊號線118係設於第一絕緣層134上。上述觸控訊號線118之材料可包括銅、鋁、鉬、鎢、金、鉻、鎳、鉑、鈦、銥、銠、上述之合金、上述之組合或其它導電性佳的金屬材料,例如可為鉬鋁鉬(Mo/Al/Mo)或鈦鋁鈦(Ti/Al/Ti)之三層結構。於其它實施例中,上述觸控訊號線118之材料可為一非金屬材料,只要使用之材料具有導電性即可。此觸控訊號線118之材料可藉由前述之化學氣相沉積法(CVD)、濺鍍法、電阻加熱蒸鍍法、電子束蒸鍍法、或其它任何適合的沉積方式形成。 In the embodiment, the touch signal line 118 is disposed on the first insulating layer 134. The material of the touch signal line 118 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, tantalum, niobium, the above alloy, the above combination or other conductive metal materials, for example, It is a three-layer structure of molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/Al/Ti). In other embodiments, the material of the touch signal line 118 may be a non-metal material as long as the material used is electrically conductive. The material of the touch signal line 118 can be formed by the aforementioned chemical vapor deposition (CVD), sputtering, resistance heating evaporation, electron beam evaporation, or any other suitable deposition method.
繼續參見第2A圖,第一基板102更包括設於第一絕緣層134上且覆蓋觸控訊號線118之第二絕緣層138。第二絕緣層138可為氮化矽、二氧化矽、或氮氧化矽,且可藉由前述化學氣相沉積法(CVD)或旋轉塗佈法形成。 Continuing to refer to FIG. 2A , the first substrate 102 further includes a second insulating layer 138 disposed on the first insulating layer 134 and covering the touch signal line 118 . The second insulating layer 138 may be tantalum nitride, hafnium oxide, or hafnium oxynitride, and may be formed by the aforementioned chemical vapor deposition (CVD) or spin coating method.
接著,此第二絕緣層138上可選擇性設有平坦層136。此平坦層136之材質可為有機之絕緣材料(光感性樹脂)或無機之絕緣材料(氮化矽、氧化矽、氮氧化矽、碳化矽、氧化鋁、或上述材質之組合)。 Then, a flat layer 136 is selectively disposed on the second insulating layer 138. The material of the flat layer 136 may be an organic insulating material (photosensitive resin) or an inorganic insulating material (tantalum nitride, cerium oxide, cerium oxynitride, tantalum carbide, aluminum oxide, or a combination thereof).
上述感測電極112(或者次感測電極112S)係設於此平坦層136上,如第2A圖所示。此感測電極112可包括透明導電材料,例如為銦錫氧化物(ITO)、氧化錫(SnO)、氧化銦鋅(IZO)、氧化銦鎵鋅(IGZO)、氧化銦錫鋅(ITZO)、氧化銻錫(ATO)、氧化銻鋅(AZO)、上述之組合或其它任何適合之透明導電氧化物材料,亦可為奈米銀絲所形成的導電透明物質層。此外,此感測電極112不但是作為觸控時的感測電極,亦是作為顯示裝置的共同電極,其中,其觸 控的驅動方式可為自電容驅動方式(self-capacitive type),其觸控傳輸電極(transmit electrode,Tx)及觸控接收電極(receive electrode,Rx)同為感測電極112。此外,感測電極112可於次感測電極112S處電性連接觸控訊號線118(見第1B圖)。 The sensing electrode 112 (or the secondary sensing electrode 112S) is disposed on the flat layer 136 as shown in FIG. 2A. The sensing electrode 112 may include a transparent conductive material such as indium tin oxide (ITO), tin oxide (SnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), Antimony tin oxide (ATO), antimony zinc oxide (AZO), combinations of the above, or any other suitable transparent conductive oxide material may also be a layer of conductive transparent material formed by nanosilver. In addition, the sensing electrode 112 is not only a sensing electrode when the touch is used, but also a common electrode of the display device, wherein the touch electrode The control driving mode can be a self-capacitive type, and the touch electrode (Tx) and the receive electrode (Rx) are the sensing electrodes 112. In addition, the sensing electrode 112 can be electrically connected to the touch signal line 118 at the secondary sensing electrode 112S (see FIG. 1B).
繼續參見第2A圖,第一基板102更包括設於平坦層136上且覆蓋感測電極112之第三絕緣層140,此第三絕緣層140可為氮化矽、二氧化矽、或氮氧化矽,且可藉由前述化學氣相沉積法(CVD)或旋轉塗佈法形成。 Continuing to refer to FIG. 2A, the first substrate 102 further includes a third insulating layer 140 disposed on the flat layer 136 and covering the sensing electrode 112. The third insulating layer 140 may be tantalum nitride, hafnium oxide, or oxynitride.矽, and can be formed by the aforementioned chemical vapor deposition (CVD) or spin coating method.
此外,第一基板102具有通孔142,此通孔142由第三絕緣層140之上表面140S向下延伸至汲極電極132,並暴露出汲極電極132之部分表面132S。 In addition, the first substrate 102 has a through hole 142 extending downward from the upper surface 140S of the third insulating layer 140 to the drain electrode 132 and exposing a portion of the surface 132S of the drain electrode 132.
第一基板102更包括設於第三絕緣層140上且電性連接汲極電極132之畫素電極144。詳細而言,此畫素電極144係設於部分第三絕緣層140上,並延伸入通孔142中以電性連接汲極電極132。 The first substrate 102 further includes a pixel electrode 144 disposed on the third insulating layer 140 and electrically connected to the drain electrode 132. In detail, the pixel electrode 144 is disposed on a portion of the third insulating layer 140 and extends into the through hole 142 to electrically connect the gate electrode 132.
此外,繼續參見第2A圖,顯示裝置100更包括相對第一基板102設置之第二基板148以及設於第一基板102與第二基板148之間的顯示介質150。顯示介質150可以是液晶、有機電激發光二極體(OLED)、無機電激發光二極體(LED)或電泳(Electro-Phoretic)粒子。 In addition, referring to FIG. 2A , the display device 100 further includes a second substrate 148 disposed opposite to the first substrate 102 and a display medium 150 disposed between the first substrate 102 and the second substrate 148 . Display medium 150 can be a liquid crystal, an organic electroluminescent diode (OLED), an inorganic electroluminescent diode (LED), or an electrophoretic (Electro-Phoretic) particle.
上述顯示裝置100可為觸控液晶顯示器,例如為薄膜電晶體液晶顯示器。或者,此液晶顯示器可為扭轉向列(Twisted Nematic,TN)型液晶顯示器、超扭轉向列(Super Twisted Nematic,STN)型液晶顯示器、雙層超扭轉向列(Double layer Super Twisted Nematic,DSTN)型液晶顯示器、垂直配向(Vertical Alignment,VA)型液晶顯示器、水平電場效應(In-Plane Switching,IPS)型液晶顯示器、膽固醇(Cholesteric)型液晶顯示器、藍相(Blue Phase)型液晶顯示器、邊際電場效應(FFS)型液晶顯示器、或其它任何適合之液晶顯示器。於其他實施例中,上述顯示裝置100可為有機電激發光二極體顯示器、無機電激發光二極體或電泳式顯示器。 The display device 100 can be a touch liquid crystal display, such as a thin film transistor liquid crystal display. Alternatively, the liquid crystal display can be a Twisted Nematic (TN) type liquid crystal display, a Super Twisted Nematic (STN) type liquid crystal display, or a double-layer super twisted nematic (Double layer Super Twisted Nematic, DSTN) liquid crystal display, Vertical Alignment (VA) type liquid crystal display, In-Plane Switching (IPS) type liquid crystal display, Cholesteric type liquid crystal display, Blue Phase Liquid crystal display, marginal electric field effect (FFS) type liquid crystal display, or any other suitable liquid crystal display. In other embodiments, the display device 100 may be an organic electroluminescent diode display, an inorganic electroluminescent diode, or an electrophoretic display.
在一些實施例中,第二基板148為彩色濾光層基板。詳細而言,作為彩色濾光層基板之第二基板148可包括一基板152、設於此基板152上之多個遮光層154、設於此多個遮光層154之間的彩色濾光層156、以及覆蓋遮光層154與彩色濾光層156之平坦層158。 In some embodiments, the second substrate 148 is a color filter layer substrate. In detail, the second substrate 148 as a color filter layer substrate may include a substrate 152, a plurality of light shielding layers 154 disposed on the substrate 152, and a color filter layer 156 disposed between the plurality of light shielding layers 154. And a flat layer 158 covering the light shielding layer 154 and the color filter layer 156.
上述基板152可包括透明基板,例如可為玻璃基板、陶瓷基板、塑膠基板或其它任何適合之透明基板,上述遮光層154可包括黑色光阻、黑色印刷油墨、黑色樹脂。而上述彩色濾光層156可包括紅色濾光層、綠色濾光層、藍色濾光層、或其它任何適合之彩色濾光層。 The substrate 152 may include a transparent substrate, such as a glass substrate, a ceramic substrate, a plastic substrate, or any other suitable transparent substrate. The light shielding layer 154 may include a black photoresist, a black printing ink, and a black resin. The color filter layer 156 may include a red filter layer, a green filter layer, a blue filter layer, or any other suitable color filter layer.
顯示裝置100可更包括設於第一基板102與第二基板148之間的間隔物160,此間隔物160為用以間隔第一基板102與第二基板148之主要結構,以維持基板間有一定的距離,也可防止顯示裝置100被按壓時第一基板102與第二基板148接觸。 The display device 100 further includes a spacer 160 disposed between the first substrate 102 and the second substrate 148. The spacer 160 is a main structure for spacing the first substrate 102 and the second substrate 148 to maintain the inter-substrate. The first substrate 102 is prevented from coming into contact with the second substrate 148 when the display device 100 is pressed by a certain distance.
如第2A圖所示,本揭露實施例藉由使開口114對應資料線106(亦即第2A圖之源極電極130)設置,可使感測電極112內之大部分區域及感測電極112邊緣於資料線106所對應之區域皆設有 開口114,故可使感測電極112內之大部分區域及感測電極112邊緣處於相似之電場環境,藉此可使感測電極112內及感測電極112邊緣與其它元件所形成之電容亦相似,降低顯示裝置100之漏光並提升顯示品質。另一方面,由於減少了感測電極112與掃描線104或資料線106重疊的部分,因此降低了感測電極112與掃描線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。 As shown in FIG. 2A, the embodiment of the present disclosure can make most of the area in the sensing electrode 112 and the sensing electrode 112 by setting the opening 114 corresponding to the data line 106 (ie, the source electrode 130 of FIG. 2A). The edge is provided in the area corresponding to the data line 106 The opening 114 allows the majority of the area in the sensing electrode 112 and the edge of the sensing electrode 112 to be in a similar electric field environment, thereby allowing the capacitance formed in the sensing electrode 112 and the edge of the sensing electrode 112 and other components to be Similarly, the light leakage of the display device 100 is lowered and the display quality is improved. On the other hand, since the portion where the sensing electrode 112 overlaps the scan line 104 or the data line 106 is reduced, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or the data line 106 is reduced, and the image of the product can be improved. Touch performance.
應注意的是,除上述第2A圖所示之實施例以外,本揭露之感測電極、畫素電極與觸控訊號線亦可有其它配置,如第2B圖之實施例所示。本揭露之範圍並不以第2A圖所示之實施例為限。此部分將於後文詳細說明。 It should be noted that, in addition to the embodiment shown in FIG. 2A above, the sensing electrode, the pixel electrode and the touch signal line of the present disclosure may have other configurations, as shown in the embodiment of FIG. 2B. The scope of the disclosure is not limited to the embodiment shown in FIG. 2A. This section will be explained in detail later.
應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.
第2B圖係本揭露另一實施例之顯示裝置200之剖面圖。如第2B圖所示,第一基板102可包括一基板122。而薄膜電晶體110包括設於此基板122上之閘極電極124,以及設於閘極電極124及基板122上之閘極介電層126。此閘極電極124係自掃描線104延第二方向A2延伸而出。 2B is a cross-sectional view of a display device 200 in accordance with another embodiment of the present disclosure. As shown in FIG. 2B, the first substrate 102 can include a substrate 122. The thin film transistor 110 includes a gate electrode 124 disposed on the substrate 122, and a gate dielectric layer 126 disposed on the gate electrode 124 and the substrate 122. The gate electrode 124 extends from the scan line 104 in the second direction A2.
薄膜電晶體110更包括設於閘極介電層126上之半導體層128,此半導體層128與閘極電極124重疊,且薄膜電晶體110之源極電極130與汲極電極132係分別設於半導體層128之兩側,且分別與半導體層128兩側之部分重疊。此外,此源極電極130則為資料線106之部分。 The thin film transistor 110 further includes a semiconductor layer 128 disposed on the gate dielectric layer 126. The semiconductor layer 128 overlaps the gate electrode 124, and the source electrode 130 and the drain electrode 132 of the thin film transistor 110 are respectively disposed on Both sides of the semiconductor layer 128 are overlapped with portions of both sides of the semiconductor layer 128, respectively. In addition, the source electrode 130 is part of the data line 106.
繼續參見第2B圖,第一基板102更包括覆蓋薄膜電晶 體110與閘極介電層126之第一絕緣層134。此第一絕緣層134可為氮化矽、二氧化矽、或氮氧化矽。第一絕緣層134可藉由化學氣相沉積法(CVD)或旋轉塗佈法形成。 Continuing to refer to FIG. 2B, the first substrate 102 further includes a cover film electro-crystal The first insulating layer 134 of the body 110 and the gate dielectric layer 126. The first insulating layer 134 may be tantalum nitride, hafnium oxide, or hafnium oxynitride. The first insulating layer 134 can be formed by chemical vapor deposition (CVD) or spin coating.
接著,此第一絕緣層134上可選擇性設有平坦層136。此平坦層136之材質可為有機之絕緣材料(光感性樹脂)或無機之絕緣材料(氮化矽、氧化矽、氮氧化矽、碳化矽、氧化鋁、或上述材質之組合)。 Then, a flat layer 136 is selectively disposed on the first insulating layer 134. The material of the flat layer 136 may be an organic insulating material (photosensitive resin) or an inorganic insulating material (tantalum nitride, cerium oxide, cerium oxynitride, tantalum carbide, aluminum oxide, or a combination thereof).
第一基板102更包括設於平坦層136上且電性連接汲極電極132之畫素電極144。詳細而言,此畫素電極144係設於部分平坦層136上,並延伸入通孔142中以電性連接汲極電極132。 The first substrate 102 further includes a pixel electrode 144 disposed on the flat layer 136 and electrically connected to the drain electrode 132. In detail, the pixel electrode 144 is disposed on the partial flat layer 136 and extends into the through hole 142 to electrically connect the drain electrode 132.
觸控訊號線118係設於平坦層136上。上述觸控訊號線118之材料可包括銅、鋁、鉬、鎢、金、鉻、鎳、鉑、鈦、銥、銠、上述之合金、上述之組合或其它導電性佳的金屬材料,例如可為鉬鋁鉬(Mo/Al/Mo)或鈦鋁鈦(Ti/Al/Ti)之三層結構。於其它實施例中,上述觸控訊號線118之材料可為一非金屬材料,只要使用之材料具有導電性即可。 The touch signal line 118 is disposed on the flat layer 136. The material of the touch signal line 118 may include copper, aluminum, molybdenum, tungsten, gold, chromium, nickel, platinum, titanium, tantalum, niobium, the above alloy, the above combination or other conductive metal materials, for example, It is a three-layer structure of molybdenum aluminum molybdenum (Mo/Al/Mo) or titanium aluminum titanium (Ti/Al/Ti). In other embodiments, the material of the touch signal line 118 may be a non-metal material as long as the material used is electrically conductive.
繼續參見第2B圖,第一基板102更包括設於平坦層136上且覆蓋畫素電極144之第二絕緣層138,此第二絕緣層138可為氮化矽、二氧化矽、或氮氧化矽,且可藉由前述化學氣相沉積法(CVD)或旋轉塗佈法形成。 Continuing to refer to FIG. 2B, the first substrate 102 further includes a second insulating layer 138 disposed on the planar layer 136 and covering the pixel electrode 144. The second insulating layer 138 may be tantalum nitride, hafnium oxide, or oxynitride.矽, and can be formed by the aforementioned chemical vapor deposition (CVD) or spin coating method.
感測電極112(或者次感測電極112S)係設於此第二絕緣層138上,如第2B圖所示。此感測電極112可包括透明導電材料,例如為銦錫氧化物(ITO)、氧化錫(SnO)、氧化銦鋅(IZO)、氧化銦鎵鋅(IGZO)、氧化銦錫鋅(ITZO)、氧化銻錫(ATO)、氧化銻鋅(AZO)、 上述之組合或其它任何適合之透明導電氧化物材料,亦可為奈米銀絲所形成的導電透明物質層。此外,此感測電極112不但是作為觸控時的感測電極,亦是作為顯示裝置的共同電極,其中,其觸控的驅動方式可為自電容驅動方式(self-capacitive type),其觸控傳輸電極(transmit electrode,Tx)及觸控接收電極(receive electrode,Rx)同為感測電極112。此外,感測電極112可於次感測電極112S處電性連接觸控訊號線118(見第1B圖)。 The sensing electrode 112 (or the secondary sensing electrode 112S) is disposed on the second insulating layer 138 as shown in FIG. 2B. The sensing electrode 112 may include a transparent conductive material such as indium tin oxide (ITO), tin oxide (SnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), Antimony tin oxide (ATO), antimony zinc oxide (AZO), The above combination or any other suitable transparent conductive oxide material may also be a layer of conductive transparent material formed by nanosilver. In addition, the sensing electrode 112 is not only a sensing electrode when the touch is used, but also a common electrode of the display device. The driving mode of the touch can be a self-capacitive type. The transmit electrode (Tx) and the receive electrode (Rx) are the same as the sense electrode 112. In addition, the sensing electrode 112 can be electrically connected to the touch signal line 118 at the secondary sensing electrode 112S (see FIG. 1B).
此外,繼續參見第2B圖,顯示裝置100更包括相對第一基板102設置之第二基板148以及設於第一基板102與第二基板148之間的顯示介質150。顯示介質150可以是液晶、有機電激發光二極體(OLED)、無機電激發光二極體(LED)或電泳(Electro-Phoretic)粒子。 In addition, referring to FIG. 2B , the display device 100 further includes a second substrate 148 disposed opposite the first substrate 102 and a display medium 150 disposed between the first substrate 102 and the second substrate 148 . Display medium 150 can be a liquid crystal, an organic electroluminescent diode (OLED), an inorganic electroluminescent diode (LED), or an electrophoretic (Electro-Phoretic) particle.
在一些實施例中,第二基板148為彩色濾光層基板。詳細而言,作為彩色濾光層基板之第二基板148可包括一基板152、設於此基板152上之多個遮光層154、設於此多個遮光層154之間的彩色濾光層156、以及覆蓋遮光層154與彩色濾光層156之平坦層158。 In some embodiments, the second substrate 148 is a color filter layer substrate. In detail, the second substrate 148 as a color filter layer substrate may include a substrate 152, a plurality of light shielding layers 154 disposed on the substrate 152, and a color filter layer 156 disposed between the plurality of light shielding layers 154. And a flat layer 158 covering the light shielding layer 154 and the color filter layer 156.
如第2B圖所示,本揭露實施例藉由使開口114對應資料線106(亦即第2B圖之源極電極130)設置,可使感測電極112內之大部分區域及感測電極112邊緣於資料線106所對應之區域皆設有開口114,故可使感測電極112內之大部分區域及感測電極112邊緣處於相似之電場環境,藉此可使感測電極112內及感測電極112邊緣與其它元件所形成之電容亦相似,降低顯示裝置200之漏光並提升顯示品質。另一方面,由於減少了感測電極112與閘極線104或 資料線106重疊的部分,因此降低了感測電極112與閘極線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。 As shown in FIG. 2B, in the embodiment of the present disclosure, most of the area in the sensing electrode 112 and the sensing electrode 112 can be made by arranging the opening 114 corresponding to the data line 106 (ie, the source electrode 130 of FIG. 2B). The edge is provided with an opening 114 in the region corresponding to the data line 106, so that most of the area in the sensing electrode 112 and the edge of the sensing electrode 112 are in a similar electric field environment, thereby making the sensing electrode 112 feel The capacitance of the edge of the electrode 112 is similar to that of other components, which reduces light leakage of the display device 200 and improves display quality. On the other hand, since the sensing electrode 112 and the gate line 104 are reduced or The portion where the data lines 106 overlap, thereby reducing the parasitic capacitance between the sensing electrodes 112 and the gate lines 104 or the data lines 106, can improve the image and touch performance of the product.
第3A圖係本揭露另一實施例之顯示裝置300A之第一基板102的上視圖。第3A圖所示之實施例與前述第1A-1B圖之實施例之差別在於感測電極112之連接部162為多邊型。開口114為第一間隔G1或第二間隔G2的延伸分支,開口114與第一間隔G1及第二間隔G2互相連接。應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 FIG. 3A is a top view of the first substrate 102 of the display device 300A according to another embodiment of the present disclosure. The embodiment shown in Fig. 3A differs from the embodiment of the first embodiment 1A-1B in that the connecting portion 162 of the sensing electrode 112 is of a polygonal type. The opening 114 is an extended branch of the first interval G1 or the second interval G2, and the opening 114 is interconnected with the first interval G1 and the second interval G2. It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.
第3B圖係本揭露另一實施例之顯示裝置300B之第一基板102的上視圖。第3B圖所示之實施例與前述第3A圖之實施例之差別在於連接部164可設於感測電極112之邊緣。開口114位於感測電極112之中,且連接部164位於開口114與第一間隔G1或第二間隔G2之間。於此實施例中,開口114與第一間隔G1及第二間隔G2並無連接,於其他實施例中,開口114可部分與第一間隔G1或第二間隔G2互相連接。所設置的連接部164的數量不以第3B圖所示為限,其可依實際需求調整連接部164的數量,如第3C圖所示。 FIG. 3B is a top view of the first substrate 102 of the display device 300B of another embodiment of the present invention. The difference between the embodiment shown in FIG. 3B and the embodiment of FIG. 3A is that the connecting portion 164 can be provided at the edge of the sensing electrode 112. The opening 114 is located in the sensing electrode 112, and the connecting portion 164 is located between the opening 114 and the first interval G1 or the second interval G2. In this embodiment, the opening 114 is not connected to the first interval G1 and the second interval G2. In other embodiments, the opening 114 may be partially connected to the first interval G1 or the second interval G2. The number of the connecting portions 164 is not limited to that shown in FIG. 3B, and the number of the connecting portions 164 can be adjusted according to actual needs, as shown in FIG. 3C.
第3C圖係本揭露另一實施例之顯示裝置300C之第一基板102的上視圖。第3C圖所示之實施例與前述第3B圖之實施例之差別在於連接部164僅設於感測電極112之三個側邊之邊緣,即開口114可與相鄰該感測電極112的第一間隔G1其中之一互相連接,而與其他相鄰該感測電極112的第一間隔G1及第二間隔G2之間具有連接部164而未相連。 FIG. 3C is a top view of the first substrate 102 of the display device 300C according to another embodiment of the present disclosure. The difference between the embodiment shown in FIG. 3C and the embodiment in FIG. 3B is that the connecting portion 164 is only disposed at the edge of the three sides of the sensing electrode 112, that is, the opening 114 can be adjacent to the sensing electrode 112. One of the first intervals G1 is connected to each other, and has a connection portion 164 between the first interval G1 and the second interval G2 adjacent to the other sensing electrodes 112.
第3D圖係本揭露另一實施例之顯示裝置300D之第一 基板102的上視圖。第3D圖所示之實施例與前述第3A圖之實施例之差別在於每一個次感測電極112S對應多個次畫素108設置,例如對應兩個次畫素108設置。於其他實施例中,每一個次感測電極112S亦分別可對應其他個數的次畫素108設置,而彼此以連接部相互電性連接,並具有開口114對應掃描線104或資料線106。 3D is the first display device 300D of another embodiment of the present disclosure A top view of the substrate 102. The embodiment shown in FIG. 3D differs from the embodiment of FIG. 3A in that each of the secondary sensing electrodes 112S corresponds to a plurality of sub-pixels 108, for example, corresponding to two sub-pixels 108. In other embodiments, each of the secondary sensing electrodes 112S can also be disposed corresponding to the other number of sub-pixels 108, and electrically connected to each other by the connecting portion, and has an opening 114 corresponding to the scanning line 104 or the data line 106.
第3E圖係本揭露另一實施例之顯示裝置300E之第一基板102的上視圖。第3E圖所示之實施例與前述第3A圖之實施例之差別在於至少一個次感測電極112S1係對應一個次畫素108設置,而至少另一個次感測電極112S2對應多個次畫素108設置。 FIG. 3E is a top view of the first substrate 102 of the display device 300E of another embodiment. The embodiment shown in FIG. 3E differs from the embodiment in FIG. 3A in that at least one sub-sense electrode 112S1 corresponds to one sub-pixel 108, and at least another sub-sense electrode 112S2 corresponds to a plurality of sub-pixels. 108 settings.
第4圖係本揭露另一實施例之顯示裝置400之上視圖。第5A圖係第4圖之顯示裝置400於區域50之部分放大圖及上視圖。第5B圖係第4圖之顯示裝置400於區域50之部分放大圖及下視圖。如第4-5B圖所示,掃描線104包括主軸部104A以及自主軸部104A沿方向A2延伸而出之多個閘極電極124。 FIG. 4 is a top view of a display device 400 according to another embodiment of the present disclosure. Fig. 5A is a partial enlarged view and a top view of the display device 400 of Fig. 4 in the area 50. FIG. 5B is a partial enlarged view and a bottom view of the display device 400 of FIG. 4 in the area 50. As shown in FIG. 4-5B, the scanning line 104 includes a main shaft portion 104A and a plurality of gate electrodes 124 extending from the autonomous shaft portion 104A in the direction A2.
應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.
如第4-5B圖所示,至少一感測電極112具有多個開口114,此多個開口114包括第一方向開口114A以及第二方向開口114B。需注意的是,第一方向A1為掃描線104之主軸部104A的延伸方向,而第二方向A2為資料線106的延伸方向。 As shown in FIG. 4-5B, at least one sensing electrode 112 has a plurality of openings 114 including a first direction opening 114A and a second direction opening 114B. It should be noted that the first direction A1 is the extending direction of the main shaft portion 104A of the scanning line 104, and the second direction A2 is the extending direction of the data line 106.
繼續參見第4-5B圖,第一方向開口114A係對應兩個相鄰之閘極電極124之間設置,而第二方向開口114B係對應資料線106設置。在其他實施例中,第一方向開口114A也可暴露出部 分掃描線104之主軸部104A,其中部份掃描線104的定義可視為感測電極112與與掃描線104之主軸部104A有不重疊區域。 Continuing to refer to FIG. 4-5B, the first direction opening 114A is disposed between two adjacent gate electrodes 124, and the second direction opening 114B is disposed corresponding to the data line 106. In other embodiments, the first direction opening 114A can also be exposed. The main shaft portion 104A of the sub-scanning line 104, wherein the definition of the partial scanning line 104 can be regarded as a region where the sensing electrode 112 does not overlap with the main shaft portion 104A of the scanning line 104.
此外,在觸控訊號線118大抵與上述資料線106重疊設置之實施例中,第二方向開口114B亦對應觸控訊號線118設置。 In addition, in the embodiment where the touch signal line 118 is disposed to overlap with the data line 106, the second direction opening 114B is also disposed corresponding to the touch signal line 118.
本揭露實施例藉由使第一方向開口114A對應兩個相鄰之閘極電極124之間設置,並使第二方向開口114B對應資料線106設置,可使感測電極112內之大部分區域及感測電極112邊緣於掃描線104或資料線106所對應之區域皆設有開口114,故可使感測電極112內之大部分區域及感測電極112邊緣處於相似之電場環境,藉此可使感測電極112內及感測電極112邊緣與其它元件所形成之寄生電容亦相似,降低顯示裝置500之漏光並提升顯示品質。另一方面,由於減少了感測電極112與掃描線104、資料線106或觸控訊號線118重疊的部分,因此降低了感測電極112與掃描線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。 The embodiment of the present disclosure can make most of the area in the sensing electrode 112 by setting the first direction opening 114A corresponding to the two adjacent gate electrodes 124 and the second direction opening 114B corresponding to the data line 106. And the edge of the sensing electrode 112 is provided with an opening 114 in the area corresponding to the scanning line 104 or the data line 106, so that most of the area in the sensing electrode 112 and the edge of the sensing electrode 112 are in a similar electric field environment, thereby The parasitic capacitance formed in the sensing electrode 112 and the edge of the sensing electrode 112 and other components can also be similar, which reduces the light leakage of the display device 500 and improves the display quality. On the other hand, since the portion where the sensing electrode 112 overlaps the scan line 104, the data line 106 or the touch signal line 118 is reduced, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or the data line 106 is reduced. Can improve the image and touch performance of the product.
此外,在一些實施例中,兩個相鄰之感測電極112係由第一間隔S5及第二間隔S6隔開,且第一方向開口114A之寬度W1可與第一間隔S5於第二方向A2之寬度第一間距GS1相同,如第4圖所示。 In addition, in some embodiments, two adjacent sensing electrodes 112 are separated by a first interval S5 and a second interval S6, and a width W1 of the first direction opening 114A may be in a second direction with the first interval S5. The width of A2 is the same as the first pitch GS1, as shown in Fig. 4.
此外,在一些實施例中,第一方向開口114A於第一方向A1相距最遠的兩側邊S1及S2係分別與第一方向開口114A所對應之兩個閘極電極124於第一方向A1之邊緣E1及E2對齊,如第5A圖及後續之第5B圖所示。 In addition, in some embodiments, the first direction openings 114A are the farthest sides S1 and S2 in the first direction A1, and the two gate electrodes 124 corresponding to the first direction openings 114A are respectively in the first direction A1. The edges E1 and E2 are aligned, as shown in Figure 5A and subsequent Figure 5B.
於其他實施例中,沿該第一方向A1方向,上述兩側 邊S1與S2之間的距離,可小於或大於邊緣E1與E2之間的距離,其中,側邊S1可與邊緣E1切齊而側邊S2不與邊緣E2切齊,或者,側邊S2與邊緣E2切齊而側邊S1不與邊緣E1切齊,或者,側邊S1不與邊緣E1切齊而側邊S2亦不與邊緣E2切齊。 In other embodiments, along the first direction A1 direction, the two sides The distance between the edges S1 and S2 may be smaller or larger than the distance between the edges E1 and E2, wherein the side S1 may be aligned with the edge E1 and the side S2 may not be aligned with the edge E2, or the side S2 may be The edge E2 is aligned and the side S1 is not aligned with the edge E1, or the side S1 is not aligned with the edge E1 and the side S2 is not aligned with the edge E2.
此外,在一些實施例中,上述第二方向開口114B係設於兩個相鄰之掃描線104之間。此外,在一些實施例中,第二方向開口114B之寬度W3與第二間隔G2於第一方向A2之第二間距GS2相同。 Moreover, in some embodiments, the second direction opening 114B is disposed between two adjacent scan lines 104. Moreover, in some embodiments, the width W3 of the second direction opening 114B is the same as the second spacing GS2 of the second interval G2 in the first direction A2.
此外,在一些實施例中,第二方向開口114B於第方向相距最遠的兩側邊S3及S4係分別與第二方向開口114B所對應之兩個閘極線104於第二方向A2之邊緣E3及E4對齊,如第5B圖所示。 In addition, in some embodiments, the second direction opening 114B is the farthest side edges S3 and S4 in the first direction, and the two gate lines 104 corresponding to the second direction opening 114B are respectively at the edge of the second direction A2. E3 and E4 are aligned as shown in Figure 5B.
於其他實施例中,沿該第二方向A2方向,上述兩側邊S3與S4之間的距離,可小於或大於邊緣E4與E4之間的距離,其中,側邊S3可與邊緣E3切齊而側邊S4不與邊緣E4切齊,或者,側邊S4與邊緣E4切齊而側邊S3不與邊緣E3切齊,或者,側邊S3不與邊緣E3切齊而側邊S4亦不與邊緣E4切齊。 In other embodiments, along the second direction A2, the distance between the two sides S3 and S4 may be smaller or larger than the distance between the edges E4 and E4, wherein the side S3 may be aligned with the edge E3. The side S4 is not aligned with the edge E4, or the side S4 is aligned with the edge E4 and the side S3 is not aligned with the edge E3, or the side S3 is not aligned with the edge E3 and the side S4 is not Edge E4 is aligned.
第5C圖係沿著第5A-5B圖之線段5C-5C所繪製之剖面圖。第5D圖係沿著第5A-5B圖之線段5D-5D所繪製之剖面圖。應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 Figure 5C is a cross-sectional view taken along line 5C-5C of Figure 5A-5B. Figure 5D is a cross-sectional view taken along line 5D-5D of Figure 5A-5B. It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.
如第5C-5D圖所示,本揭露實施例藉由使第一方向開口114A對應兩個相鄰之閘極電極124之間設置,並使第二方向開 口114B對應資料線106設置,可使感測電極112內之大部分區域及感測電極112邊緣於掃描線104或資料線106所對應之區域皆設有開口114,故可使感測電極112內之大部分區域及感測電極112邊緣處於相似之電場環境,藉此可使感測電極112內及感測電極112邊緣與其它元件所形成之電容亦相似,降低顯示裝置500之漏光並提升顯示品質。另一方面,由於減少了感測電極112與掃描線104、資料線106或觸控訊號線118重疊的部分,因此降低了感測電極112與掃描線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。 As shown in FIG. 5C-5D, the embodiment of the present disclosure is such that the first direction opening 114A is disposed between two adjacent gate electrodes 124, and the second direction is opened. The port 114B is disposed corresponding to the data line 106, so that most of the area in the sensing electrode 112 and the edge of the sensing electrode 112 are provided with an opening 114 in the area corresponding to the scanning line 104 or the data line 106, so that the sensing electrode 112 can be Most of the inner region and the edge of the sensing electrode 112 are in a similar electric field environment, so that the capacitance formed in the sensing electrode 112 and the edge of the sensing electrode 112 and other components are similar, thereby reducing the light leakage of the display device 500 and improving Display quality. On the other hand, since the portion where the sensing electrode 112 overlaps the scan line 104, the data line 106 or the touch signal line 118 is reduced, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or the data line 106 is reduced. Can improve the image and touch performance of the product.
應注意的是,除上述第5A-5D圖所示之實施例以外,本揭露之感測電極、畫素電極與觸控訊號線亦可有其它配置,如第6A-6D圖之實施例所示。本揭露之範圍並不以第5A-5D圖所示之實施例為限。此部分將於後文詳細說明。 It should be noted that, in addition to the embodiments shown in the above 5A-5D, the sensing electrodes, the pixel electrodes and the touch signal lines of the present disclosure may have other configurations, as in the embodiment of FIGS. 6A-6D. Show. The scope of the disclosure is not limited to the embodiments shown in Figures 5A-5D. This section will be explained in detail later.
第6A-6D圖係本揭露另一實施例之顯示裝置600。第6A圖係本揭露之顯示裝置600之上視圖。第6B圖係本揭露之顯示裝置600之下視圖。第6C圖係沿著第6A-6B圖之線段6C-6C所繪製之剖面圖。第6D圖係沿著第6A-6B圖之線段6D-6D所繪製之剖面圖。應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 6A-6D are diagrams showing a display device 600 of another embodiment. Figure 6A is a top view of the display device 600 of the present disclosure. Figure 6B is a bottom view of the display device 600 of the present disclosure. Figure 6C is a cross-sectional view taken along line 6C-6C of Figure 6A-6B. Figure 6D is a cross-sectional view taken along line 6D-6D of Figures 6A-6B. It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.
第6A-6D圖(類似前文第2A圖)所示之實施例與前述第5A-5D圖(類似前文第2B圖)之實施例之差別在於若以上視圖觀察,第6A-6D圖的畫素電極係設於感測電極之上,第5A-5D圖的畫素電極係設於感測電極之下。此外,如第6A-6D圖所示,本揭露 實施例藉由使第一方向開口114A對應兩個相鄰之閘極電極124之間設置,並使第二方向開口114B對應資料線106或觸控訊號線118設置,可使感測電極112內之大部分區域及感測電極112邊緣於掃描線104、資料線106或觸控訊號線118所對應之區域皆設有開口114,故可使感測電極112內之大部分區域及感測電極112邊緣處於相似之電場環境,藉此可使感測電極112內及感測電極112邊緣與其它元件所形成之電容亦相似,降低顯示裝置600之漏光並提升顯示品質。另一方面,由於減少了感測電極112與掃描線104、資料線106或觸控訊號線118重疊的部分,因此降低了感測電極112與掃描線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。 The difference between the embodiment shown in Figures 6A-6D (similar to Figure 2A above) and the embodiment of Figure 5A-5D (similar to Figure 2B above) is that the pixels of Figures 6A-6D are observed if viewed from the above view. The electrode system is disposed on the sensing electrode, and the pixel electrode of the 5A-5D diagram is disposed under the sensing electrode. In addition, as shown in Figures 6A-6D, the disclosure In the embodiment, the first direction opening 114A is disposed corresponding to the two adjacent gate electrodes 124, and the second direction opening 114B is disposed corresponding to the data line 106 or the touch signal line 118, so that the sensing electrode 112 can be disposed. Most of the regions and the sensing electrodes 112 are provided with openings 114 in the regions corresponding to the scanning lines 104, the data lines 106 or the touch signal lines 118, so that most of the sensing electrodes 112 and the sensing electrodes can be formed. The edge of the 112 is in a similar electric field environment, so that the capacitance formed in the sensing electrode 112 and the edge of the sensing electrode 112 and other components are similar, which reduces the light leakage of the display device 600 and improves the display quality. On the other hand, since the portion where the sensing electrode 112 overlaps the scan line 104, the data line 106 or the touch signal line 118 is reduced, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or the data line 106 is reduced. Can improve the image and touch performance of the product.
第7A圖係本揭露另一實施例之顯示裝置700之上視圖。第7B圖係第7A圖之顯示裝置700於區域7B之部分放大圖。應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 FIG. 7A is a top view of a display device 700 according to another embodiment of the present disclosure. Fig. 7B is a partially enlarged view of the display device 700 of Fig. 7A in the area 7B. It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.
如第7A-7B圖所示,兩個相鄰之感測電極112之間的間隔166係對應遮光層154設置。藉由將間隔166對應遮光層154設置,可使裝置中容易漏光之區域(亦即間隔166對應之區域)皆被遮光層154遮蔽,故可提升裝置之顯示品質。 As shown in FIGS. 7A-7B, the spacing 166 between two adjacent sensing electrodes 112 is corresponding to the light shielding layer 154. By arranging the space 166 corresponding to the light shielding layer 154, the area of the device that is easy to leak light (that is, the area corresponding to the space 166) can be shielded by the light shielding layer 154, so that the display quality of the device can be improved.
第8A圖係本揭露另一實施例之顯示裝置800之上視圖。第8B圖係第8A圖之顯示裝置800於區域8B之部分放大圖。第8C圖係第8A圖之顯示裝置800於區域8C之部分放大圖。應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標 號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 FIG. 8A is a top view of a display device 800 according to another embodiment of the present disclosure. Fig. 8B is a partially enlarged view of the display device 800 of Fig. 8A in the area 8B. Fig. 8C is a partially enlarged view of the display device 800 of Fig. 8A in the area 8C. It should be noted that elements or layers that are the same or similar in the foregoing will be identical or similar. The number indicates that the materials, manufacturing methods and functions are the same as or similar to those described above, so this section will not be described later.
如第8A-8C圖所示,沿第一方向A1延伸之第一間隔S5係對應多條掃描線104設置,而沿第二方向A2延伸之第二間隔S6係對應多條資料線106設置。 As shown in FIGS. 8A-8C, the first interval S5 extending in the first direction A1 is disposed corresponding to the plurality of scanning lines 104, and the second interval S6 extending in the second direction A2 is disposed corresponding to the plurality of data lines 106.
於此實施例中,第一間隔S5包括複數沿第一方向A1的第一部分HS1,以及複數沿第二方向A2的第二部分VS1,第一部分HS1對應掃描線104,第二部分VS1對應資料線106,第一部分HS1可對應至少一次畫素108於第一方向A1的寬度,第二部分VS1可對應至少一次畫素108於第二方向A2的寬度,第一部分HS1與第二部分VH1彼此連接形成第一間隔S5。 In this embodiment, the first interval S5 includes a plurality of first portions HS1 along the first direction A1, and a plurality of second portions VS1 along the second direction A2. The first portion HS1 corresponds to the scan line 104, and the second portion VS1 corresponds to the data line. 106, the first portion HS1 may correspond to the width of the at least one pixel 108 in the first direction A1, the second portion VS1 may correspond to the width of the at least one pixel 108 in the second direction A2, and the first portion HS1 and the second portion VH1 are connected to each other. The first interval S5.
於此實施例中,第二間隔S6包括複數沿第一方向A1的第三部分HS2,以及複數沿第二方向A2的第四部分VS2,第三部分HS2對應掃描線104,第四部分VS2對應資料線106,第三部分HS2可對應至少一次畫素108於第一方向A1的寬度,第四部分VS2可對應至少一次畫素108於第二方向A2的寬度,第三部分HS2與第四部分VS2彼此連接形成第二間隔S6 In this embodiment, the second interval S6 includes a plurality of third portions HS2 along the first direction A1, and a plurality of fourth portions VS2 along the second direction A2. The third portion HS2 corresponds to the scan line 104, and the fourth portion VS2 corresponds to The data line 106, the third portion HS2 may correspond to the width of the at least one pixel 108 in the first direction A1, the fourth portion VS2 may correspond to the width of the at least one pixel 108 in the second direction A2, and the third portion HS2 and the fourth portion VS2 are connected to each other to form a second interval S6
於其他實施例中,第一間隔S5及第二間隔S6的設置不以第8A圖為限,可僅於第一間隔S5或第二間隔S6具有同時對應掃描線104及資料線106的兩部分。 In other embodiments, the setting of the first interval S5 and the second interval S6 is not limited to FIG. 8A, and may have two portions corresponding to the scan line 104 and the data line 106 only at the first interval S5 or the second interval S6. .
在一些實施例中,沿第一方向A1延伸之第一間隔S5係對應3至10條掃描線104設置,第一間隔S5於第二方向A2的兩邊緣第一部分HS1間隔3至10條掃描線104。而沿第二方向A2延伸之間隔第二間隔S6係對應3至10條資料線106設置,第二間隔S6於第 一方向A1的兩邊緣第四部分VS2間隔3至10條資料線106。 In some embodiments, the first interval S5 extending along the first direction A1 is corresponding to 3 to 10 scan lines 104, and the first interval S5 is spaced apart from the edge of the second direction A2 by the first portion HS1 by 3 to 10 scan lines. 104. And the second interval S6 extending along the second direction A2 corresponds to 3 to 10 data lines 106, and the second interval S6 is The two edges of the one direction A1, the fourth portion VS2, are spaced from 3 to 10 data lines 106.
由於兩個感測電極112之間的第一間隔S5係對應多條掃描線104設置,而第二間隔S6係對應多條資料線106設置,故感測電極112之邊緣亦對應多條掃描線104及/或多條資料線106設置,故可將感測電極112之邊緣與掃描線104或資料線106之間的電容(亦可稱為閘極負載(gate loading))平均分至多條掃描線104及/或多條資料線106上,藉此可使上述多條掃描線104及/或多條資料線106處於相似之電場環境,降低顯示裝置800之漏光並提升顯示品質。 Since the first interval S5 between the two sensing electrodes 112 is corresponding to the plurality of scanning lines 104, and the second spacing S6 is corresponding to the plurality of data lines 106, the edges of the sensing electrodes 112 also correspond to the plurality of scanning lines. 104 and/or a plurality of data lines 106 are disposed, so that the capacitance between the edge of the sensing electrode 112 and the scan line 104 or the data line 106 (also referred to as gate loading) can be equally divided into multiple scans. The line 104 and/or the plurality of data lines 106 can thereby make the plurality of scan lines 104 and/or the plurality of data lines 106 in a similar electric field environment, thereby reducing light leakage of the display device 800 and improving display quality.
第9A圖係本揭露另一實施例之顯示裝置900A之上視圖。應注意的是,後文中與前文相同或相似的元件或膜層將以相同或相似之標號表示,其材料、製造方法與功能皆與前文所述相同或相似,故此部分在後文中將不再贅述。 FIG. 9A is a top view of a display device 900A according to another embodiment of the present disclosure. It should be noted that elements or layers that are the same or similar to those in the foregoing will be denoted by the same or similar reference numerals, and the materials, manufacturing methods and functions thereof are the same or similar to those described above, and therefore will not be described later. Narration.
如第9A圖所示,兩個相鄰之感測電極112A及112B係由第一間隔S5隔開,此第一間隔S5係設於掃描線104之主軸部104A所對應之區域之外。易言之,對應掃描線104之主軸部104A設置之感測電極112A係完全覆蓋此主軸部104A。 As shown in FIG. 9A, the two adjacent sensing electrodes 112A and 112B are separated by a first interval S5 which is disposed outside the region corresponding to the main axis portion 104A of the scanning line 104. In other words, the sensing electrode 112A disposed corresponding to the main shaft portion 104A of the scanning line 104 completely covers the main shaft portion 104A.
藉由使感測電極112A完全覆蓋此主軸部104A,可使顯示裝置900中的每個主軸部104A處於相似之電場環境,故可降低顯示裝置900之漏光並提升顯示品質。 By completely covering the main shaft portion 104A with the sensing electrode 112A, each of the main shaft portions 104A in the display device 900 can be placed in a similar electric field environment, so that light leakage of the display device 900 can be reduced and display quality can be improved.
此外,如第9A圖所示,對應掃描線104之主軸部104A設置之感測電極112A之上緣112AT係與主軸部104A之上緣104AT對齊。 Further, as shown in FIG. 9A, the upper edge 112AT of the sensing electrode 112A disposed corresponding to the main shaft portion 104A of the scanning line 104 is aligned with the upper edge 104AT of the main shaft portion 104A.
第9B圖係本揭露另一實施例之顯示裝置900B之上視 圖。第9B圖所示之實施例與前述第9A圖之實施例之差別在於對應掃描線104之主軸部104A設置之感測電極112A之上緣112AT係與閘極電極124之上緣124T對齊。 FIG. 9B is a top view of the display device 900B according to another embodiment of the present disclosure. Figure. The difference between the embodiment shown in FIG. 9B and the embodiment of FIG. 9A is that the upper edge 112AT of the sensing electrode 112A disposed corresponding to the main shaft portion 104A of the scanning line 104 is aligned with the upper edge 124T of the gate electrode 124.
需注意的是,若對應掃描線104之主軸部104A設置之感測電極112A未完全覆蓋此主軸部104A,則無法有效使每個主軸部104A處於相似之電場環境並提升顯示品質。然而,若對應掃描線104之主軸部104A設置之感測電極112A之上緣112AT超過閘極電極124之上緣124T,則會降低裝置之開口率。 It should be noted that if the sensing electrode 112A disposed corresponding to the main shaft portion 104A of the scanning line 104 does not completely cover the main shaft portion 104A, each of the main shaft portions 104A cannot be effectively placed in a similar electric field environment and the display quality is improved. However, if the upper edge 112AT of the sensing electrode 112A disposed corresponding to the main shaft portion 104A of the scanning line 104 exceeds the upper edge 124T of the gate electrode 124, the aperture ratio of the device is lowered.
綜上所述,本揭露實施例係使感測電極內及感測電極邊緣於相似之電場環境,故可使感測電極內及感測電極邊緣與其它元件所形成之電容亦相似,降低顯示裝置之漏光並提升顯示品質。另一方面,由於減少了感測電極112與掃描線104、資料線106或觸控訊號線118重疊的部分,因此降低了感測電極112與掃描線104或資料線106之間的寄生電容,可提高產品的影像及觸控性能。 In summary, the embodiment of the present disclosure is such that the sensing electrode and the sensing electrode edge are in a similar electric field environment, so that the capacitance formed in the sensing electrode and the sensing electrode edge and other components are similar, and the display is lowered. Light leakage from the device and improved display quality. On the other hand, since the portion where the sensing electrode 112 overlaps the scan line 104, the data line 106 or the touch signal line 118 is reduced, the parasitic capacitance between the sensing electrode 112 and the scan line 104 or the data line 106 is reduced. Can improve the image and touch performance of the product.
此外,應注意的是,熟習本技術領域之人士均深知,本揭露所述之汲極與源極可互換,因其定義係與本身所連接的電壓位準有關。 In addition, it should be noted that those skilled in the art are well aware that the drains and sources described herein are interchangeable because their definition is related to the voltage level to which they are connected.
值得注意的是,以上所述之元件尺寸、元件參數、以及元件形狀皆非為本揭露之限制條件。此技術領域中具有通常知識者可以根據不同需要調整這些設定值。另外,本揭露之顯示裝置及其製造方法並不僅限於第1A-9B圖所圖示之狀態。本揭露可以僅包括第1A-9B圖之任何一或複數個實施例之任何一或複數項特徵。換言之,並非所有圖示之特徵均須同時實施於本揭露之 顯示裝置及其製造方法中。 It should be noted that the component sizes, component parameters, and component shapes described above are not limitations of the disclosure. Those of ordinary skill in the art can adjust these settings according to different needs. Further, the display device and the method of manufacturing the same according to the present disclosure are not limited to the state illustrated in FIGS. 1A-9B. The disclosure may include only any one or more of the features of any one or a plurality of embodiments of Figures 1A-9B. In other words, not all features of the illustrations must be implemented simultaneously in this disclosure. A display device and a method of manufacturing the same.
雖然本揭露的實施例及其優點已揭露如上,但應該瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作更動、替代與潤飾。此外,本揭露之保護範圍並未侷限於說明書內所述特定實施例中的製程、機器、製造、物質組成、裝置、方法及步驟,任何所屬技術領域中具有通常知識者可從本揭露揭示內容中理解現行或未來所發展出的製程、機器、製造、物質組成、裝置、方法及步驟,只要可以在此處所述實施例中實施大抵相同功能或獲得大抵相同結果皆可根據本揭露使用。因此,本揭露之保護範圍包括上述製程、機器、製造、物質組成、裝置、方法及步驟。另外,每一申請專利範圍構成個別的實施例,且本揭露之保護範圍也包括各個申請專利範圍及實施例的組合。 Although the embodiments of the present disclosure and its advantages are disclosed above, it should be understood that those skilled in the art can make changes, substitutions, and refinements without departing from the spirit and scope of the disclosure. In addition, the scope of the disclosure is not limited to the processes, machines, manufactures, compositions, devices, methods, and steps in the specific embodiments described in the specification, and those of ordinary skill in the art may disclose the disclosure It is understood that the processes, machines, manufactures, compositions, devices, methods, and procedures that are presently or in the future may be used in accordance with the present disclosure as long as they can perform substantially the same function or achieve substantially the same results in the embodiments described herein. Accordingly, the scope of protection of the present disclosure includes the above-described processes, machines, manufacturing, material compositions, devices, methods, and procedures. In addition, each patent application scope constitutes an individual embodiment, and the scope of protection of the disclosure also includes a combination of the scope of the patent application and the embodiments.
100‧‧‧顯示裝置 100‧‧‧ display device
102‧‧‧第一基板 102‧‧‧First substrate
104‧‧‧掃描線 104‧‧‧ scan line
106‧‧‧資料線 106‧‧‧Information line
108‧‧‧次畫素 108‧‧‧ pixels
112‧‧‧感測電極 112‧‧‧Sensor electrode
112S‧‧‧次感測電極 112S‧‧‧ sensing electrodes
113‧‧‧積體電路連接區 113‧‧‧Integrated circuit connection area
114‧‧‧開口 114‧‧‧ openings
116‧‧‧連接部 116‧‧‧Connecting Department
118‧‧‧觸控訊號線 118‧‧‧Touch signal line
120‧‧‧通孔 120‧‧‧through hole
1B‧‧‧區域 1B‧‧‧Area
A1‧‧‧第一方向 A1‧‧‧ first direction
A2‧‧‧第二方向 A2‧‧‧ second direction
CS‧‧‧交錯部 CS‧‧‧Interlace
S5‧‧‧第一間隔 S5‧‧‧ first interval
S6‧‧‧第二間隔 S6‧‧‧Second interval
GS1‧‧‧第一間距 GS1‧‧‧first spacing
GS2‧‧‧第二間距 GS2‧‧‧second spacing
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| DE102016110142.7A DE102016110142B4 (en) | 2015-06-05 | 2016-06-01 | DISPLAY DEVICE |
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| CN106886098B (en) * | 2017-03-07 | 2019-09-13 | Oppo广东移动通信有限公司 | Display module and electronic device |
| KR102733085B1 (en) * | 2019-12-30 | 2024-11-22 | 엘지디스플레이 주식회사 | Touch display device |
| CN111158054B (en) * | 2019-12-31 | 2021-04-06 | 浙江大学 | Passive object detection display system and method based on LED screen |
| TWI779899B (en) * | 2021-10-25 | 2022-10-01 | 友達光電股份有限公司 | Display device |
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| WO2014024908A1 (en) * | 2012-08-09 | 2014-02-13 | シャープ株式会社 | Liquid crystal display |
| CN103901650A (en) * | 2012-12-25 | 2014-07-02 | 上海天马微电子有限公司 | Embedded touch display device |
| TWM492475U (en) * | 2014-09-19 | 2014-12-21 | Superc Touch Corp | Embedded display touch-control structure |
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| CN102236187B (en) * | 2010-04-20 | 2014-01-01 | 东莞万士达液晶显示器有限公司 | touch display panel |
| US9268447B2 (en) * | 2013-05-13 | 2016-02-23 | Himax Technologies Limited | Touch display panel, touch display device and driving method thereof |
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| WO2014024908A1 (en) * | 2012-08-09 | 2014-02-13 | シャープ株式会社 | Liquid crystal display |
| CN103293780A (en) * | 2012-08-10 | 2013-09-11 | 上海天马微电子有限公司 | touch control liquid crystal display device |
| CN103901650A (en) * | 2012-12-25 | 2014-07-02 | 上海天马微电子有限公司 | Embedded touch display device |
| TWM492475U (en) * | 2014-09-19 | 2014-12-21 | Superc Touch Corp | Embedded display touch-control structure |
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