TWI572725B - ＭｏＴｉ靶材的製造方法 - Google Patents
ＭｏＴｉ靶材的製造方法 Download PDFInfo
- Publication number
- TWI572725B TWI572725B TW101132875A TW101132875A TWI572725B TW I572725 B TWI572725 B TW I572725B TW 101132875 A TW101132875 A TW 101132875A TW 101132875 A TW101132875 A TW 101132875A TW I572725 B TWI572725 B TW I572725B
- Authority
- TW
- Taiwan
- Prior art keywords
- moti
- target
- powder
- less
- film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910016027 MoTi Inorganic materials 0.000 claims description 81
- 239000000843 powder Substances 0.000 claims description 32
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 22
- 238000005245 sintering Methods 0.000 claims description 20
- 239000011812 mixed powder Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 6
- 239000011164 primary particle Substances 0.000 claims description 6
- 238000010298 pulverizing process Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 38
- 238000010438 heat treatment Methods 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 239000013039 cover film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910004356 Ti Raw Inorganic materials 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000007088 Archimedes method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000004931 aggregating effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000009849 vacuum degassing Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011208429 | 2011-09-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201313930A TW201313930A (zh) | 2013-04-01 |
| TWI572725B true TWI572725B (zh) | 2017-03-01 |
Family
ID=47963746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101132875A TWI572725B (zh) | 2011-09-26 | 2012-09-07 | ＭｏＴｉ靶材的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6037211B2 (ja) |
| KR (2) | KR20130033322A (ja) |
| CN (1) | CN103014638A (ja) |
| TW (1) | TWI572725B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104602438B (zh) * | 2014-12-29 | 2017-07-14 | 中国原子能科学研究院 | 一种吸氚靶片制备方法 |
| CN106378455A (zh) * | 2015-07-31 | 2017-02-08 | 汉能新材料科技有限公司 | 一种钼合金旋转金属管材及其制备方法 |
| CN105087982B (zh) * | 2015-08-20 | 2017-03-15 | 金堆城钼业股份有限公司 | 一种MoTa/MoTi合金粉末的制备方法 |
| JP6868426B2 (ja) * | 2016-03-29 | 2021-05-12 | 東北特殊鋼株式会社 | チタン合金製コーティング膜及びその製造方法、並びにチタン合金製ターゲット材の製造方法 |
| TWI720188B (zh) * | 2016-04-26 | 2021-03-01 | 日商出光興產股份有限公司 | 氧化物燒結體、濺鍍靶及氧化物半導體膜 |
| CN113174573A (zh) * | 2021-04-29 | 2021-07-27 | 宁波江丰电子材料股份有限公司 | 一种钼钛合金靶坯的制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770744A (ja) * | 1993-09-02 | 1995-03-14 | Hitachi Metals Ltd | Ｔｉ−Ｗターゲット材およびその製造方法 |
| JP2008255440A (ja) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | ＭｏＴｉ合金スパッタリングターゲット材 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4415303B2 (ja) * | 2003-07-10 | 2010-02-17 | 日立金属株式会社 | 薄膜形成用スパッタリングターゲット |
| JP4110533B2 (ja) * | 2004-02-27 | 2008-07-02 | 日立金属株式会社 | Ｍｏ系ターゲット材の製造方法 |
| US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| JP5210498B2 (ja) * | 2006-04-28 | 2013-06-12 | 株式会社アルバック | 接合型スパッタリングターゲット及びその作製方法 |
| JP4743645B2 (ja) * | 2008-03-28 | 2011-08-10 | 日立金属株式会社 | 金属薄膜配線 |
-
2012
- 2012-09-07 TW TW101132875A patent/TWI572725B/zh active
- 2012-09-12 JP JP2012200240A patent/JP6037211B2/ja active Active
- 2012-09-25 KR KR1020120106323A patent/KR20130033322A/ko not_active Ceased
- 2012-09-26 CN CN2012103641643A patent/CN103014638A/zh active Pending
-
2014
- 2014-07-18 KR KR1020140090885A patent/KR20140106468A/ko not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770744A (ja) * | 1993-09-02 | 1995-03-14 | Hitachi Metals Ltd | Ｔｉ−Ｗターゲット材およびその製造方法 |
| JP2008255440A (ja) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | ＭｏＴｉ合金スパッタリングターゲット材 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013082998A (ja) | 2013-05-09 |
| TW201313930A (zh) | 2013-04-01 |
| JP6037211B2 (ja) | 2016-12-07 |
| CN103014638A (zh) | 2013-04-03 |
| KR20130033322A (ko) | 2013-04-03 |
| KR20140106468A (ko) | 2014-09-03 |
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