TWI568117B - Package structure of laser and associated element - Google Patents
Package structure of laser and associated element Download PDFInfo
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- TWI568117B TWI568117B TW104112541A TW104112541A TWI568117B TW I568117 B TWI568117 B TW I568117B TW 104112541 A TW104112541 A TW 104112541A TW 104112541 A TW104112541 A TW 104112541A TW I568117 B TWI568117 B TW I568117B
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- 230000003287 optical effect Effects 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 66
- 239000000853 adhesive Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- 238000005520 cutting process Methods 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 230000017525 heat dissipation Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000012544 monitoring process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Semiconductor Lasers (AREA)
Description
本發明是有關於一種封裝結構,且特別是有關於一種雷射的封裝結構及其相關元件。 This invention relates to a package structure, and more particularly to a laser package structure and related components.
請參照第1A圖,其所繪示為習知邊射型雷射二極體(edge-emitting Laser diode)的封裝結構示意圖。此封裝結構100包括一雷射二極體(Laser diode)104固定於一次黏著基板(submount)102上。再者,次黏著基板102固定於電路板106(如印刷電路板,PCB)上,且在電路板106上有至少二佈局線路(layout trace)以作為二個電極(未繪示),並且二個電極可電性連接至雷射二極體104。基本上,電性連接的方式可以利用各種已知方式來完成,例如線連接(wire bond)等等。再者,於二個電極提供一偏壓後,雷射二極體104即可產生雷射光束108。 Please refer to FIG. 1A , which is a schematic diagram of a package structure of a conventional edge-emitting laser diode. The package structure 100 includes a laser diode 104 that is attached to a primary submount 102. Furthermore, the secondary adhesive substrate 102 is fixed on the circuit board 106 (such as a printed circuit board, PCB), and has at least two layout traces on the circuit board 106 as two electrodes (not shown), and The electrodes are electrically connected to the laser diode 104. Basically, the manner of electrical connection can be accomplished in a variety of known ways, such as wire bonds and the like. Moreover, after the two electrodes provide a bias voltage, the laser diode 108 can generate the laser beam 108.
請參照第1B圖,其所繪示為習知電晶體外觀筒狀(Transistor Outline CAN,簡稱TO CAN)封裝的雷射示意圖。 Please refer to FIG. 1B , which is a schematic diagram of a laser of a conventional transistor outline CAN (TO CAN) package.
圓形金屬底座(base)130中有一凸出部130a,而金屬殼體(cap)122覆蓋於圓形金屬底座130上並形成TO CAN封裝。 而在金屬殼體122與圓形金屬底座130所包覆的空間126內包括一雷射二極體132附著於次黏著基板(submount)134上,而次黏著基板134固定於圓形金屬底座130的凸出部130a。再者,二個電極(electrode)150延伸至金屬殼體122與圓形金屬底座130所包覆的空間126內,並與雷射二極體132達成電性連接。再者,於二 個電極150提供一偏壓後,雷射二極體132即可由視窗(window)124輸出雷射光束120。明顯地,利用TO CAN封裝結構,可將邊射型雷射的二極體132封裝成為面射型雷射。 A circular metal base 130 has a projection 130a and a metal cap 122 overlies the circular metal base 130 and forms a TO CAN package. In the space 126 covered by the metal casing 122 and the circular metal base 130, a laser diode 132 is attached to the sub-mount 134, and the sub-adhesive substrate 134 is fixed to the circular metal base 130. Projection portion 130a. Furthermore, two electrodes 150 extend into the space 126 covered by the metal casing 122 and the circular metal base 130, and are electrically connected to the laser diode 132. Furthermore, Yu Er After the electrodes 150 provide a bias voltage, the laser diode 132 can output the laser beam 120 from the window 124. Obviously, with the TO CAN package structure, the edge-emitting laser diode 132 can be packaged into a surface-emitting laser.
眾所周知,TO CAN封裝結構的體積太大,並不適合用於小型電子裝置,例如手機上。因此,其他類型的封裝結構逐漸被發展出來。 As is well known, the TO CAN package structure is too bulky and is not suitable for use in small electronic devices such as cell phones. Therefore, other types of package structures have gradually been developed.
請參照第2A圖,其所繪示為習知雷射光束轉向封裝結構示意圖。該技術係揭露於US 2009/0047024。在此技術中,封裝結構200係作為光傳接模組(optical transceiver module)中的傳輸側(transmit side),其可將輸出雷射光束233耦合(couple)至光纖(fiber)。 Please refer to FIG. 2A, which is a schematic diagram of a conventional laser beam steering package structure. This technology is disclosed in US 2009/0047024. In this technique, package structure 200 acts as a transmit side in an optical transceiver module that couples output laser beam 233 to a fiber.
封裝結構200包括:雷射二極體210、光學系統230、光偵測器220、反射元件250、基板270與控制器260。基本上,雷射二極體210由前表面(front facet)發射輸出雷射光束(output light beam),由後表面(rear facet)發射監測光束(monitoring light beam)。輸出雷射光束經由光學系統230、反射元件250耦合入光纖270。 The package structure 200 includes a laser diode 210, an optical system 230, a photodetector 220, a reflective element 250, a substrate 270, and a controller 260. Basically, the laser diode 210 emits an output light beam from a front facet and a monitoring light beam from a rear facet. The output laser beam is coupled into fiber 270 via optical system 230, reflective element 250.
監測光束則被光偵側器220所吸收,並對應地產生光電信號至控制器260,而控制器260根據光電信號來產生回授信號至雷射二極體210用以控制雷射二極體210的輸出雷射光束之強度(intensity)。 The monitoring beam is absorbed by the photodetector 220 and correspondingly generates a photoelectric signal to the controller 260, and the controller 260 generates a feedback signal to the laser diode 210 for controlling the laser diode according to the photoelectric signal. The intensity of the output laser beam of 210 is (intensity).
請參照第2B圖至第2D圖,其所繪示為習知反射元件的製作示意圖。如第2B圖所示,將晶圓(wafer)280進行拋光(polish),並將金屬層290形成於拋光面281上,形成鏡面(mirroring surface)286。 Please refer to FIG. 2B to FIG. 2D , which are schematic diagrams showing the fabrication of conventional reflective elements. As shown in FIG. 2B, a wafer 280 is polished and a metal layer 290 is formed on the polishing surface 281 to form a mirroring surface 286.
再者,如第2C圖所示,利用45度的斜面切割刀(45° bevel blade)在282與283位置切割矽晶圓280後,會形成切割表面(diced surface)284。再者,利用正規切割刀(regular dicing blade)在位置285的地方直切,並在位置287與288直切後形成分離的 多個反射元件250。 Further, as shown in FIG. 2C, a diced surface 284 is formed after the wafer wafer 280 is cut at positions 282 and 283 by a 45 degree bevel blade. Furthermore, a regular dicing blade is used to cut straight at position 285 and form a separate separation at positions 287 and 288. A plurality of reflective elements 250.
將第2C圖的一個反射元件翻轉135度之後,即如為第2D圖所示之反射元件250。另外,切割面284係固定於基板270,而反射面286可將輸出雷射光束進行反射並轉向。 After flipping one of the reflective elements of FIG. 2C by 135 degrees, it is the reflective element 250 as shown in FIG. 2D. In addition, the cutting surface 284 is fixed to the substrate 270, and the reflecting surface 286 can reflect and steer the output laser beam.
本發明之主要目的在於提出一種雷射的封裝結構及其相關元件。本發明設計一種新的反射元件來將邊射型雷射二極體的輸出雷射光束進行反射與轉向,進而形成面射型雷射。再者,修改反射元件的製程,使其同時具備反射與光偵射功能的光學元件,並且有效地縮小封裝結構的體積。 The main object of the present invention is to provide a laser package structure and related components. The present invention designs a new reflective element to reflect and steer the output laser beam of the edge-emitting laser diode to form a surface-emitting laser. Furthermore, the process of the reflective element is modified to have both optical elements for reflection and light detection, and the volume of the package structure is effectively reduced.
本發明係有關於一種雷射的封裝結構,包括:一散熱基座;一雷射元件,固應於該散熱基座的一表面,可發射一第一雷射光束;以及一第一光學元件,具有一反射面,使得該第一雷射光束的一第一部分可被穿透,並且使得該第一雷射光束的一第二部分被反射;其中,利用一蝕刻製程,於該第一光學元件上形成一晶癖面,且處理該晶癖面成為該反射面;或者利用一切割製程,於該第一光學元件上形成一第一斜面,且處理該第一斜面成為該反射面。 The invention relates to a laser package structure, comprising: a heat dissipation base; a laser element fixed to a surface of the heat dissipation base to emit a first laser beam; and a first optical component Having a reflective surface such that a first portion of the first laser beam can be penetrated and a second portion of the first laser beam is reflected; wherein an etch process is utilized for the first optical Forming a wafer surface on the element and processing the wafer surface to become the reflection surface; or forming a first slope on the first optical element by using a cutting process, and processing the first slope to become the reflection surface.
本發明係有關於一種封裝結構中的光學元件,包括:一基板,具有一斜面、一第一表面與一第二表面,且該斜面與該第二表面之間具有一夾角;一摻雜層,位於該第一表面與該斜面下方;一介電層,覆蓋於該斜面上;以及一電極,接觸於該摻雜層;其中,該介電層可被一雷射光束的一第一部分所穿透,且可反射該雷射光束的一第二部分,使得該光學元件根據該雷射光束的該第一部分產生一感應光電流。 The present invention relates to an optical component in a package structure, comprising: a substrate having a slope, a first surface and a second surface, and an angle between the slope and the second surface; a doped layer Between the first surface and the slope; a dielectric layer covering the slope; and an electrode contacting the doped layer; wherein the dielectric layer can be covered by a first portion of a laser beam Penetrating and reflecting a second portion of the laser beam such that the optical element produces an induced photocurrent based on the first portion of the laser beam.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下: In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:
100‧‧‧封裝結構 100‧‧‧Package structure
102‧‧‧次黏著基板 102‧‧‧ times adhesion substrate
104‧‧‧雷射二極體 104‧‧‧Laser diode
106‧‧‧電路板 106‧‧‧Circuit board
108、120‧‧‧雷射光束 108, 120‧‧‧Laser beam
122‧‧‧金屬殼體 122‧‧‧Metal housing
124‧‧‧視窗 124‧‧‧Window
126‧‧‧空間 126‧‧‧ Space
130‧‧‧圓形金屬底座 130‧‧‧round metal base
130a‧‧‧凸出部 130a‧‧‧Protruding
132‧‧‧雷射二極體 132‧‧‧Laser diode
134‧‧‧次黏著基板 134‧‧‧adhesive substrates
150‧‧‧電極 150‧‧‧electrode
200‧‧‧封裝結構 200‧‧‧Package structure
210‧‧‧雷射二極體 210‧‧‧Laser diode
220‧‧‧光偵測器 220‧‧‧Photodetector
230‧‧‧光學系統 230‧‧‧Optical system
233‧‧‧輸出雷射光束 233‧‧‧ Output laser beam
250‧‧‧反射元件 250‧‧‧reflecting elements
260‧‧‧控制器 260‧‧‧ Controller
270‧‧‧基板 270‧‧‧Substrate
280‧‧‧矽晶圓 280‧‧‧矽 wafer
281‧‧‧拋光面 281‧‧‧ Polished surface
282、283、285、287、288‧‧‧位置 282, 283, 285, 287, 288‧‧‧ positions
284‧‧‧切割表面 284‧‧‧ cutting surface
286‧‧‧鏡面 286‧‧ ‧ mirror
290‧‧‧金屬層 290‧‧‧metal layer
310、610‧‧‧矽基板 310, 610‧‧‧矽 substrate
312、314、316‧‧‧位置 312, 314, 316‧‧ position
320‧‧‧罩幕層 320‧‧‧ Cover layer
331‧‧‧晶癖面 331‧‧‧crystal face
332、334、336、338‧‧‧光學元件 332, 334, 336, 338‧‧‧ optical components
402、502、702‧‧‧雷射二極體 402, 502, 702‧‧ ‧ laser diode
404、504、704‧‧‧次黏著基板 404, 504, 704‧‧‧ times adhesion substrates
410、550、570、710‧‧‧電路板 410, 550, 570, 710‧‧‧ circuit boards
420、560、572、720‧‧‧輸出雷射光束 420, 560, 572, 720‧‧‧ output laser beam
422、574‧‧‧監測雷射光束 422, 574‧‧‧Monitor laser beam
500‧‧‧光學元件 500‧‧‧Optical components
520‧‧‧摻雜層 520‧‧‧Doped layer
525‧‧‧電極 525‧‧‧electrode
530、652‧‧‧反射層 530, 652‧‧‧reflective layer
562‧‧‧第二部分 562‧‧‧Part II
564‧‧‧第一部分 564‧‧‧Part 1
612、614、616‧‧‧位置 612, 614, 616‧‧‧ position
632、634、636、638‧‧‧光學元件 632, 634, 636, 638‧‧‧ optical components
650‧‧‧斜面 650‧‧‧ Bevel
651‧‧‧SiO2層 651‧‧‧SiO 2 layer
第1A圖所繪示為習知邊射型雷射二極體的封裝結構示意圖。 FIG. 1A is a schematic diagram showing a package structure of a conventional edge-emitting type laser diode.
第1B圖所繪示為習知電晶體外觀筒狀封裝的面射型雷射示意圖。 FIG. 1B is a schematic view showing a surface-emitting type laser of a conventional transistor appearance cylindrical package.
第2A圖所繪示為習知雷射光束轉向封裝結構示意圖。 FIG. 2A is a schematic view showing a conventional laser beam steering package structure.
第2B圖至第2D圖所繪示為習知反射元件的製作示意圖。 2B to 2D are schematic views showing the fabrication of a conventional reflective element.
第3A圖至第3C圖,其所繪示為本發明光學元件的製作示意圖。 3A to 3C are diagrams showing the fabrication of the optical component of the present invention.
第4圖所繪示為本發明的封裝結構第一實施例。 FIG. 4 is a view showing a first embodiment of the package structure of the present invention.
第5A圖所繪示為本發明另一光學元件。 Figure 5A illustrates another optical component of the present invention.
第5B圖所繪示為本發明封裝結構第二實施例。 FIG. 5B illustrates a second embodiment of the package structure of the present invention.
第5C圖所繪示為本發明封裝結構第三實施例。 FIG. 5C illustrates a third embodiment of the package structure of the present invention.
第5D圖所繪示為本發明封裝結構第四實施例。 FIG. 5D illustrates a fourth embodiment of the package structure of the present invention.
第6A圖至第6C圖所繪示為本發明再一反射元件的製作示意圖 6A to 6C are schematic views showing the fabrication of still another reflective element of the present invention.
第7圖所繪示為本發明的封裝結構第五實施例。 Figure 7 is a diagram showing a fifth embodiment of the package structure of the present invention.
根據本發明的實施例,本發明的光學元件係於矽基板上進行蝕刻而形成一晶癖面(habit plane),並處理晶癖面來形成此光學元件的反射面,且此光學元件可作為一反射元件。請參照第3A圖至第3C圖,其所繪示為本發明光學元件的製作示意圖。 According to an embodiment of the present invention, the optical element of the present invention is etched on a ruthenium substrate to form a habit plane, and the wafer face is processed to form a reflective surface of the optical element, and the optical element can be used as A reflective element. Please refer to FIG. 3A to FIG. 3C , which are schematic diagrams showing the fabrication of the optical component of the present invention.
首先,於矽基板(substrate)310的第一表面(上表面)上形成具有開口的一罩幕層320,例如SiO2層。接著,利用化學蝕刻液進行蝕刻矽基板310後,即可形成第3A圖的二個溝槽(trench)。如第3A圖所示,選擇特定的化學蝕刻液在特定晶向的晶片上蝕刻。當罩幕層320的開口較小時,會形成V型溝槽,溝槽的二側壁即為(111)平面,亦即晶癖面。另外,當罩幕層320的 開口較大時,會在溝槽底部形成(100)平面,而溝槽的二側壁為(111)平面。其中,晶癖面與(100)面之夾角為54.7度。換言之,本發明係選擇第一表面為(100)面的矽基板310,即可控制矽基板310的第一表面與晶癖面之夾角為54.7度。 First, a mask layer 320 having an opening, such as a SiO 2 layer, is formed on the first surface (upper surface) of the substrate 310. Next, after etching the tantalum substrate 310 with a chemical etching solution, two trenches of the third drawing can be formed. As shown in Figure 3A, a particular chemical etchant is selected to be etched on a wafer of a particular crystal orientation. When the opening of the mask layer 320 is small, a V-shaped groove is formed, and the two side walls of the groove are the (111) plane, that is, the wafer surface. In addition, when the opening of the mask layer 320 is large, a (100) plane is formed at the bottom of the trench, and the two sidewalls of the trench are (111) planes. The angle between the crystal face and the (100) face is 54.7 degrees. In other words, the present invention selects the ruthenium substrate 310 whose first surface is the (100) plane, that is, the angle between the first surface of the ruthenium substrate 310 and the wafer surface is controlled to be 54.7 degrees.
為調整反射面角度為45度。如第3B圖所示,於晶棒切製成矽基板時,其切割角度與矽基板的(100)面為9.7度。之後,如第3C圖所示,移除於罩幕層320並於312、314、316位置直切矽基板310後形成分離的多個光學元件332、334、336、338。當然,上述的切割角度可依照實際所需的角度進行切割,並不限定於9.7度。 To adjust the angle of the reflecting surface to 45 degrees. As shown in FIG. 3B, when the ingot was cut into a tantalum substrate, the cutting angle was 9.7 degrees with respect to the (100) plane of the tantalum substrate. Thereafter, as shown in FIG. 3C, the plurality of optical elements 332, 334, 336, 338 are separated after being removed from the mask layer 320 and directly cut the substrate 310 at positions 312, 314, and 316. Of course, the above cutting angle can be cut according to the actual required angle, and is not limited to 9.7 degrees.
於第3C圖中,光學元件332與336的晶癖面331與335其底部切割面呈現45度的夾角,適合運用於本發明面射型雷射的封裝結構。以下的封裝結構係以光學元件332來進行說明,當然也可以用光學元件336來取代,不再贅述。 In Fig. 3C, the wafer faces 331 and 335 of the optical elements 332 and 336 exhibit an angle of 45 degrees with the bottom cut surface, which is suitable for use in the package structure of the face-illuminated laser of the present invention. The following package structure is described by the optical element 332. Of course, the optical element 336 may be used instead, and details are not described herein again.
請參照第4圖,其所繪示為本發明封裝結構第一實施例。此封裝結構包括一電路板410、一雷射二極體402、一次黏著基板404、與一光學元件332。其中,雷射二極體402固定於次黏著基板404。再者,次黏著基板404與光學元件332固定於電路板410的一表面。再者,雷射二極體402與次黏著基板404形成雷射元件,且電路板410係為一種散熱基座(heat sink)。 Please refer to FIG. 4, which illustrates a first embodiment of the package structure of the present invention. The package structure includes a circuit board 410, a laser diode 402, a primary adhesion substrate 404, and an optical component 332. The laser diode 402 is fixed to the sub-adhesive substrate 404. Furthermore, the secondary adhesive substrate 404 and the optical component 332 are fixed to a surface of the circuit board 410. Furthermore, the laser diode 402 forms a laser element with the sub-adhesive substrate 404, and the circuit board 410 is a heat sink.
由第4圖所示,於此封裝結構中,雷射二極體402由前表面發射輸出雷射光束420並直接照射至光學元件332的晶癖面331。而輸出雷射光束經由光學元件332的晶癖面331(反射面)反射而改變輸出雷射光束的路徑。換句話說,大部分的輸出雷射光束可被反射面所反射,少部分的輸出雷射光束係穿透過反射面。因此,即完成本發明邊射型雷射二極體的光束轉向封裝結構。當然,於最後的製程中,可將矽膠(未繪示)填充於電路板410上覆蓋住所有元件,以保護電路板410上的所有元件。 As shown in FIG. 4, in this package structure, the laser diode 402 emits an output laser beam 420 from the front surface and directly illuminates the wafer face 331 of the optical element 332. The output laser beam is reflected by the wafer face 331 (reflecting surface) of the optical element 332 to change the path of the output laser beam. In other words, most of the output laser beam can be reflected by the reflecting surface, and a small portion of the output laser beam passes through the reflecting surface. Therefore, the beam steering package structure of the edge-emitting type laser diode of the present invention is completed. Of course, in the final process, silicone (not shown) may be filled on the circuit board 410 to cover all components to protect all components on the circuit board 410.
再者,在此領域的技術人員也可以進一步的處理晶 癖面,來形成反射率更佳的反射層。例如,於晶癖面上331鍍上金屬層(例如銀),或者介電高反射膜層。 Furthermore, technicians in this field can further process the crystal Knead the surface to form a reflective layer with better reflectivity. For example, a metal layer (for example, silver) or a dielectric high-reflection film layer is plated on the wafer face 331.
另外,在此領域的技術人員也可以將雷射二極體402與光學元件322直接固定於次黏著基板404後,再將次黏著基板404固定於電路板410表面。或者,於電路板410表面,雷射二極體402的另外一側固定一光偵測器(未繪示),用來接收雷射二極體402後表面發射的監測雷射光束(monitoring light beam)。 In addition, a person skilled in the art can directly fix the laser diode 402 and the optical element 322 to the sub-adhesive substrate 404, and then fix the sub-adhesive substrate 404 to the surface of the circuit board 410. Alternatively, on the surface of the circuit board 410, the other side of the laser diode 402 is fixed with a photodetector (not shown) for receiving the monitoring laser beam emitted from the rear surface of the laser diode 402 (monitoring light). Beam).
再者,上述第3C圖的光學元件也可以進一步的加工成為具有特定功能的光學元件。請參照第5A圖,其所繪示為本發明的另一光學元件示意圖。另外,第5B圖為本發明的封裝結構第二實施例。基本上,以下的光學元件500,係加工第3C圖之光學元件336所形成。當然,也可以用光學元件332來取代,不再贅述。 Furthermore, the optical element of the above 3Cth diagram can be further processed into an optical element having a specific function. Please refer to FIG. 5A, which is a schematic diagram of another optical component of the present invention. In addition, FIG. 5B is a second embodiment of the package structure of the present invention. Basically, the following optical element 500 is formed by processing the optical element 336 of FIG. 3C. Of course, it can also be replaced by optical element 332, and will not be described again.
如第5A圖所示,於矽基板310的斜面以及上表面進行摻雜製程,用以形成一摻雜層520與一PN接面(junction)。 舉例來說,假設矽基板為P型基板,則進行N型摻雜製程以形成N型摻雜層,而P型基板與N型摻雜層交界即為PN接面。另外,形成一介電層530覆蓋於摻雜層520上,亦即讓介電層530覆蓋於矽基板310的斜面,接著形成一電極525接觸於摻雜層520。 As shown in FIG. 5A, a doping process is performed on the slope and the upper surface of the germanium substrate 310 to form a doped layer 520 and a PN junction. For example, if the germanium substrate is a P-type substrate, an N-type doping process is performed to form an N-type doped layer, and a P-type substrate and an N-type doped layer are at a PN junction. In addition, a dielectric layer 530 is formed over the doped layer 520, that is, the dielectric layer 530 is covered on the slope of the germanium substrate 310, and then an electrode 525 is formed in contact with the doped layer 520.
基本上,介電層530可以根據實際的需求,來形成特定反射率的介電層530。舉例來說,95%的反射率,5%的穿透率的介電層530。因此,穿透過介電層530的雷射光束進入PN接面,即因光電效應產生感應光電流。換言之,第5A圖所揭露之光學元件500,為具有反射功能以及光偵測功能的反射與偵測整合元件。 Basically, the dielectric layer 530 can form a dielectric layer 530 of a specific reflectivity according to actual needs. For example, 95% reflectivity, 5% transmittance of dielectric layer 530. Therefore, the laser beam penetrating through the dielectric layer 530 enters the PN junction, that is, the induced photocurrent is generated by the photoelectric effect. In other words, the optical component 500 disclosed in FIG. 5A is a reflection and detection integration component having a reflection function and a light detection function.
當然,除了設計高反射率與低穿透率的介電層530之外,也可以設計為低反射率與高穿透率的介電層530。在此條件之下所設計出的光學元件500,由於大部分的雷射光束穿透至 PN接面,少部分的雷射光束被反射,所以可作為光偵側功能的光學元件500。 Of course, in addition to designing the dielectric layer 530 having high reflectivity and low transmittance, the dielectric layer 530 having low reflectivity and high transmittance can also be designed. The optical component 500 designed under this condition, since most of the laser beam penetrates to The PN junction, a small portion of the laser beam is reflected, so it can be used as the optical component 500 of the light-detecting side function.
請參照第5B圖,其所繪示為本發明的封裝結構第二實施例。此封裝結構包括一電路板550、一雷射二極體502、一次黏著基板504、與一光學元件500。其中,雷射二極體502固定於次黏著基板504。再者,次黏著基板504與光學元件500固定於電路板550表面。再者,雷射二極體502與次黏著基板504形成雷射元件,且電路板550係為一種散熱基座,且光學元件500係為一反射與偵測整合元件。 Please refer to FIG. 5B, which illustrates a second embodiment of the package structure of the present invention. The package structure includes a circuit board 550, a laser diode 502, a primary adhesion substrate 504, and an optical component 500. The laser diode 502 is fixed to the sub-adhesive substrate 504. Furthermore, the secondary adhesive substrate 504 and the optical component 500 are fixed to the surface of the circuit board 550. Furthermore, the laser diode 502 and the secondary adhesive substrate 504 form a laser element, and the circuit board 550 is a heat dissipation base, and the optical component 500 is a reflection and detection integration component.
由第5B圖所示,於此封裝結構中,雷射二極體502由前表面發射輸出雷射光束560。而輸出雷射光束560經由光學元件500的介電層530,將輸出雷射光束中的第一部分564進入PN接面,用以產生感應光電流。另外,輸出雷射光束中的第二部分562,經由反射改變輸出雷射光束的路徑。因此,即完成本發明的封裝結構。當然,於最後的製程中,可將矽膠(未繪示)填充於電路板550上覆蓋住所有元件,用以保護電路板550上的所有元件。 As shown in FIG. 5B, in this package structure, the laser diode 502 emits an output laser beam 560 from the front surface. The output laser beam 560, via the dielectric layer 530 of the optical component 500, directs the first portion 564 of the output laser beam into the PN junction for generating an induced photocurrent. Additionally, a second portion 562 of the output laser beam is output that changes the path of the output laser beam via reflection. Therefore, the package structure of the present invention is completed. Of course, in the final process, a silicone (not shown) may be filled on the circuit board 550 to cover all components to protect all components on the circuit board 550.
同理,在此領域的技術人員也可以將雷射二極體502與光學元件500直接固定於次黏著基板504後,在將次黏著基板504固定於電路板550的表面。 Similarly, a person skilled in the art can directly fix the laser diode 502 and the optical element 500 to the sub-adhesive substrate 504, and then fix the sub-adhesive substrate 504 to the surface of the circuit board 550.
請參照第5C圖,其所繪示為本發明的封裝結構第三實施例。此封裝結構包括一電路板570、一雷射二極體502、一次黏著基板504、與一光學元件500。其中,雷射二極體502固定於次黏著基板504。再者,次黏著基板504與光學元件500固定於電路板570表面。再者,雷射二極體502與次黏著基板504形成雷射元件,且電路板570係為一種散熱基座,且光學元件500係為光偵側功能的光學元件500。 Please refer to FIG. 5C, which illustrates a third embodiment of the package structure of the present invention. The package structure includes a circuit board 570, a laser diode 502, a primary adhesion substrate 504, and an optical component 500. The laser diode 502 is fixed to the sub-adhesive substrate 504. Furthermore, the secondary adhesive substrate 504 and the optical component 500 are fixed to the surface of the circuit board 570. Furthermore, the laser diode 502 and the sub-adhesive substrate 504 form a laser element, and the circuit board 570 is a heat dissipation base, and the optical element 500 is an optical element 500 of a light-detecting side function.
由第5C圖所示,於此封裝結構中,雷射二極體502由前表面發射輸出雷射光束572,由後表面輸出監測雷射光束 574。因此,監測雷射光束574經由光學元件500的介電層530,將監測雷射光束574中的大部分穿透進入PN接面,用以產生感應光電流。另外,監測雷射光束中的小二部分(未繪示)則被反射。 因此,即完成本發明的封裝結構。當然,於最後的製程中,可將矽膠(未繪示)填充於電路板570上覆蓋住所有元件,用以保護電路板570上的所有元件。 As shown in FIG. 5C, in this package structure, the laser diode 502 emits an output laser beam 572 from the front surface and monitors the laser beam from the rear surface output. 574. Thus, the monitoring laser beam 574 passes through the dielectric layer 530 of the optical component 500, penetrating most of the monitored laser beam 574 into the PN junction for generating an induced photocurrent. In addition, monitoring the small two parts of the laser beam (not shown) is reflected. Therefore, the package structure of the present invention is completed. Of course, in the final process, silicone (not shown) may be filled on the circuit board 570 to cover all components to protect all components on the circuit board 570.
請參照第5D圖,其所繪示為本發明的封裝結構第四實施例。此封裝結構包括一電路板410、一雷射二極體402、一次黏著基板404、一第一光學元件332、一第二光學元件500。 其中,雷射二極體402固定於次黏著基板404。再者,次黏著基板404與第一光學元件332固定於電路板410的一表面。再者,雷射二極體402與次黏著基板404形成雷射元件,且電路板410係為一種散熱基座,第一光學元件332係作為反射元件,且第二光學元件500為具備光偵側功能的光學元件。 Please refer to FIG. 5D, which illustrates a fourth embodiment of the package structure of the present invention. The package structure includes a circuit board 410, a laser diode 402, a primary adhesion substrate 404, a first optical component 332, and a second optical component 500. The laser diode 402 is fixed to the sub-adhesive substrate 404. Furthermore, the secondary adhesive substrate 404 and the first optical component 332 are fixed to a surface of the circuit board 410. Furthermore, the laser diode 402 forms a laser element with the sub-adhesive substrate 404, and the circuit board 410 is a heat dissipation base, the first optical element 332 serves as a reflective element, and the second optical element 500 is provided with a light detector. Side-functioning optical components.
由第5C圖所示,於此封裝結構中,雷射二極體402由前表面發射輸出雷射光束420,由後表面發射監測雷射光束422。而輸出雷射光束經由第一光學元件332的晶癖面331(反射面)反射改變大部分輸出雷射光束的路徑。再者,監測雷射光束422經由第二光學元件500的介電層530,使得大部分的監測雷射光束422進入PN接面,用以產生感應光電流,而少部分的監測雷射光束(未繪示)經由反射改變監測雷射光束的路徑。 As shown in FIG. 5C, in this package structure, the laser diode 402 emits an output laser beam 420 from the front surface and a laser beam 422 from the rear surface. The output laser beam is reflected by the wafer face 331 (reflecting surface) of the first optical element 332 to change the path of most of the output laser beam. Furthermore, the monitoring of the laser beam 422 via the dielectric layer 530 of the second optical component 500 causes a majority of the monitored laser beam 422 to enter the PN junction for generating the induced photocurrent and a small portion of the monitored laser beam ( Not shown) the path of the monitored laser beam is monitored via reflection.
當然,於最後的製程中,可將矽膠(未繪示)填充於電路板410上覆蓋住所有元件,以保護電路板410上的所有元件。 Of course, in the final process, silicone (not shown) may be filled on the circuit board 410 to cover all components to protect all components on the circuit board 410.
再者,在此領域的技術人員也可以進一步的處理晶癖面,來形成反射率更佳的反射層。例如,於晶癖面上331鍍上金屬層(例如銀),或者介電高反射膜層。 Furthermore, those skilled in the art can further process the wafer surface to form a reflective layer having a better reflectance. For example, a metal layer (for example, silver) or a dielectric high-reflection film layer is plated on the wafer face 331.
另外,在此領域的技術人員也可以將雷射二極體402、第二光學元件500與第一光學元件322直接固定於次黏著基板404後,再將次黏著基板404固定於電路板410表面。 In addition, a person skilled in the art can directly fix the laser diode 402, the second optical component 500 and the first optical component 322 to the sub-adhesive substrate 404, and then fix the sub-adhesive substrate 404 to the surface of the circuit board 410. .
另外,本發明的光學元件也可以於矽基板上進行切割而直接形成一斜面,並處理斜面來形成光學元件的反射面。請參照第6A圖至第6C圖,其所繪示為本發明再一光學元件的製作示意圖。 Further, the optical element of the present invention may be formed by directly cutting a bevel on a tantalum substrate and treating the bevel to form a reflecting surface of the optical element. Please refer to FIG. 6A to FIG. 6C , which are schematic diagrams showing the fabrication of still another optical component of the present invention.
首先,於矽基板(substrate)610的第一表面(上表面),利用45度的斜面切割刀(45° bevel blade)切割矽基板610並形成V型溝槽。再者,溝槽的二側壁與矽基板610的第二表面(下表面)之夾角為45度。 First, on the first surface (upper surface) of the substrate 610, the ruthenium substrate 610 is cut with a 45 degree bevel blade and a V-shaped groove is formed. Furthermore, the angle between the two sidewalls of the trench and the second surface (lower surface) of the germanium substrate 610 is 45 degrees.
如第6B圖所示,於612、614、616位置直切矽基板610後形成分離的多個光學元件632、634、636、638。當然,上述的斜面切割刀(bevel blade)的切割角度可依照實際所需的角度進行切割,並不限定於45度。 As shown in FIG. 6B, a plurality of separate optical elements 632, 634, 636, 638 are formed after the substrate 610 is cut straight at positions 612, 614, and 616. Of course, the cutting angle of the bevel blade described above can be cut according to the actual required angle, and is not limited to 45 degrees.
再者,光學元件632、634、636、638的斜面與基板的第二表面呈現45度的夾角,適合加工後形成反射面,並運用於本發明面射型雷射的封裝結構。 Moreover, the slope of the optical elements 632, 634, 636, 638 and the second surface of the substrate exhibit an angle of 45 degrees, which is suitable for forming a reflective surface after processing, and is applied to the package structure of the surface-emitting laser of the present invention.
以下以光學元件630為例來繼續作說明。如第6C圖所示,由於經過切割後的斜面650很粗糙。因此,需先進行一平坦化製程。在平坦化製程中,先利用旋塗式(spin on glass,SOG)製程(或其它高分子材料),於於斜面650上形成一液態SiO2層。 之後,固化(curing)後的SiO2層651之後即可增加斜面650的平坦性。接著,在於SiO2層651上再形成一反射層652,其材料可為金屬(例如銀),或者介電材料。 Hereinafter, the optical element 630 will be taken as an example for continued description. As shown in Fig. 6C, the slanted surface 650 after cutting is rough. Therefore, a flattening process needs to be performed first. In the planarization process, a liquid SiO 2 layer is formed on the slope 650 by a spin on glass (SOG) process (or other polymer material). Thereafter, the flatness of the slope 650 can be increased after the SiO 2 layer 651 after curing. Next, a reflective layer 652 is formed on the SiO 2 layer 651, and the material thereof may be metal (for example, silver) or a dielectric material.
當然,平坦化製程也可以用蝕刻來取代,利用蝕刻液(etchant)將進行斜面650的蝕刻,即可平坦化斜面650。之後,再形成一反射層即可。 Of course, the planarization process may be replaced by etching, and the bevel 650 may be planarized by etching the slope 650 with an etchant. After that, a reflective layer can be formed.
請參照第7圖,其所繪示為本發明的封裝結構第五實施例。此封裝結構包括一電路板710、一雷射二極體702、一次黏著基板704、與一光學元件632。其中,雷射二極體702固定於次黏著基板704。再者,次黏著基板704與光學元件632固 定於電路板710表面。再者,電路板710係為一種散熱基座。 Please refer to FIG. 7, which illustrates a fifth embodiment of the package structure of the present invention. The package structure includes a circuit board 710, a laser diode 702, a primary adhesion substrate 704, and an optical component 632. The laser diode 702 is fixed to the sub-adhesive substrate 704. Furthermore, the secondary adhesive substrate 704 and the optical component 632 are fixed. It is fixed on the surface of the circuit board 710. Furthermore, the circuit board 710 is a heat sink base.
由第7圖所示,於此封裝結構中,雷射二極體702由前表面發射輸出雷射光束720。而輸出雷射光束經由光學元件732的反射層652而改變輸出雷射光束的路徑。因此,完成本發明面射型雷射的封裝結構。當然,於最後的製程中,可將矽膠(未繪示)填充於電路板710上,用以保護電路板710上的所有元件。 As shown in FIG. 7, in this package structure, the laser diode 702 emits an output laser beam 720 from the front surface. The output laser beam changes the path of the output laser beam via the reflective layer 652 of the optical element 732. Therefore, the package structure of the surface-emitting laser of the present invention is completed. Of course, in the final process, silicone (not shown) may be filled on the circuit board 710 to protect all components on the circuit board 710.
再者,在此領域的技術人員也可以將雷射二極體702與光學元件632直接固定於次黏著基板704後,在將次黏著基板704固定於電路板710表面。或者,於電路板710表面雷射二極體702的另外一側,固定一光偵測器(未繪示),用來接收雷射二極體702後表面發射的監測雷射光束(monitoring light beam)。 Furthermore, those skilled in the art can directly fix the laser diode 702 and the optical element 632 to the sub-adhesive substrate 704, and then fix the sub-adhesive substrate 704 to the surface of the circuit board 710. Alternatively, on the other side of the laser diode 702 on the surface of the circuit board 710, a photodetector (not shown) is fixed for receiving the monitoring laser beam emitted from the rear surface of the laser diode 702 (monitoring light) Beam).
由以上的說明可知,本發明的優點係提出一種邊射型雷射二極體的光束轉向封裝結構及其相關元件。將邊射型雷射二極體與光學元件進行封裝,其具備小尺寸之優勢,可運用於小型電子裝置(例如手機)。 As apparent from the above description, an advantage of the present invention is to provide a beam steering package structure and related components of an edge-emitting type laser diode. The edge-emitting laser diode and the optical component are packaged, and have the advantage of small size, and can be applied to small electronic devices (such as mobile phones).
綜上所述,雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
331‧‧‧晶癖面 331‧‧‧crystal face
332‧‧‧光學元件 332‧‧‧Optical components
402‧‧‧雷射二極體 402‧‧‧Laser diode
404‧‧‧次黏著基板 404‧‧‧adhesive substrates
410‧‧‧電路板 410‧‧‧Circuit board
420‧‧‧輸出雷射光束 420‧‧‧ Output laser beam
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| TW104112541A TWI568117B (en) | 2015-04-20 | 2015-04-20 | Package structure of laser and associated element |
| CN201811141241.2A CN108963749A (en) | 2015-04-20 | 2015-05-15 | Laser packaging structure and optical element thereof |
| CN201510249388.3A CN106207741A (en) | 2015-04-20 | 2015-05-15 | Laser packaging structure and optical element thereof |
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| TWI632751B (en) * | 2017-06-14 | 2018-08-11 | 友嘉科技股份有限公司 | Package structure of semiconductor laser |
| US12519288B2 (en) | 2020-05-26 | 2026-01-06 | Brolis Sensor Technology, Uab | Optoelectronic devices with tunable optical mode and carrier distribution in the waveguides |
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| CN109119884A (en) * | 2017-06-23 | 2019-01-01 | 友嘉科技股份有限公司 | Semiconductor laser packaging structure |
| WO2020024240A1 (en) * | 2018-08-03 | 2020-02-06 | 深圳市大疆创新科技有限公司 | Laser diode package module, distance detection apparatus, and electronic device |
| CN112213808A (en) * | 2019-07-10 | 2021-01-12 | 隆达电子股份有限公司 | Reflecting mirror and packaging structure applying same |
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Also Published As
| Publication number | Publication date |
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| CN106207741A (en) | 2016-12-07 |
| CN108963749A (en) | 2018-12-07 |
| TW201639257A (en) | 2016-11-01 |
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