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TWI563635B - Non-volatile memory device and method for fabricating thereof - Google Patents

Non-volatile memory device and method for fabricating thereof

Info

Publication number
TWI563635B
TWI563635B TW103131853A TW103131853A TWI563635B TW I563635 B TWI563635 B TW I563635B TW 103131853 A TW103131853 A TW 103131853A TW 103131853 A TW103131853 A TW 103131853A TW I563635 B TWI563635 B TW I563635B
Authority
TW
Taiwan
Prior art keywords
fabricating
memory device
volatile memory
volatile
memory
Prior art date
Application number
TW103131853A
Other languages
English (en)
Other versions
TW201613073A (en
Inventor
Cheng Ta Yang
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW103131853A priority Critical patent/TWI563635B/zh
Publication of TW201613073A publication Critical patent/TW201613073A/zh
Application granted granted Critical
Publication of TWI563635B publication Critical patent/TWI563635B/zh

Links

TW103131853A 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof TWI563635B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103131853A TWI563635B (en) 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103131853A TWI563635B (en) 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof

Publications (2)

Publication Number Publication Date
TW201613073A TW201613073A (en) 2016-04-01
TWI563635B true TWI563635B (en) 2016-12-21

Family

ID=56360945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131853A TWI563635B (en) 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof

Country Status (1)

Country Link
TW (1) TWI563635B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI745919B (zh) * 2020-04-08 2021-11-11 旺宏電子股份有限公司 記憶體元件

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107305892B (zh) 2016-04-20 2020-10-02 硅存储技术公司 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法
TWI760412B (zh) * 2018-01-05 2022-04-11 聯華電子股份有限公司 記憶體元件及其製造方法
TWI675456B (zh) * 2018-05-11 2019-10-21 華邦電子股份有限公司 記憶體裝置的形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200605079A (en) * 2004-01-21 2006-02-01 Sandisk Corp Non-volatile memory cell using high-k material and intergate programming
TW201409669A (zh) * 2012-08-28 2014-03-01 Sk Hynix Inc 具有埋入式位元線之半導體裝置及其製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200605079A (en) * 2004-01-21 2006-02-01 Sandisk Corp Non-volatile memory cell using high-k material and intergate programming
TW201409669A (zh) * 2012-08-28 2014-03-01 Sk Hynix Inc 具有埋入式位元線之半導體裝置及其製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI745919B (zh) * 2020-04-08 2021-11-11 旺宏電子股份有限公司 記憶體元件

Also Published As

Publication number Publication date
TW201613073A (en) 2016-04-01

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