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TWI563635B - Non-volatile memory device and method for fabricating thereof - Google Patents

Non-volatile memory device and method for fabricating thereof

Info

Publication number
TWI563635B
TWI563635B TW103131853A TW103131853A TWI563635B TW I563635 B TWI563635 B TW I563635B TW 103131853 A TW103131853 A TW 103131853A TW 103131853 A TW103131853 A TW 103131853A TW I563635 B TWI563635 B TW I563635B
Authority
TW
Taiwan
Prior art keywords
fabricating
memory device
volatile memory
volatile
memory
Prior art date
Application number
TW103131853A
Other languages
Chinese (zh)
Other versions
TW201613073A (en
Inventor
Cheng Ta Yang
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW103131853A priority Critical patent/TWI563635B/en
Publication of TW201613073A publication Critical patent/TW201613073A/en
Application granted granted Critical
Publication of TWI563635B publication Critical patent/TWI563635B/en

Links

TW103131853A 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof TWI563635B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW103131853A TWI563635B (en) 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW103131853A TWI563635B (en) 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof

Publications (2)

Publication Number Publication Date
TW201613073A TW201613073A (en) 2016-04-01
TWI563635B true TWI563635B (en) 2016-12-21

Family

ID=56360945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131853A TWI563635B (en) 2014-09-16 2014-09-16 Non-volatile memory device and method for fabricating thereof

Country Status (1)

Country Link
TW (1) TWI563635B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI745919B (en) * 2020-04-08 2021-11-11 旺宏電子股份有限公司 Memory device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107305892B (en) 2016-04-20 2020-10-02 硅存储技术公司 Method of Forming Tri-Gate Non-Volatile Flash Memory Cell Pairs Using Two Polysilicon Deposition Steps
TWI760412B (en) * 2018-01-05 2022-04-11 聯華電子股份有限公司 Memory device and manufacturing method thereof
TWI675456B (en) * 2018-05-11 2019-10-21 華邦電子股份有限公司 Method for forming memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200605079A (en) * 2004-01-21 2006-02-01 Sandisk Corp Non-volatile memory cell using high-k material and intergate programming
TW201409669A (en) * 2012-08-28 2014-03-01 Sk Hynix Inc Semiconductor device having buried bit line and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200605079A (en) * 2004-01-21 2006-02-01 Sandisk Corp Non-volatile memory cell using high-k material and intergate programming
TW201409669A (en) * 2012-08-28 2014-03-01 Sk Hynix Inc Semiconductor device having buried bit line and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI745919B (en) * 2020-04-08 2021-11-11 旺宏電子股份有限公司 Memory device

Also Published As

Publication number Publication date
TW201613073A (en) 2016-04-01

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