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TWI563075B - - Google Patents

Info

Publication number
TWI563075B
TWI563075B TW102121167A TW102121167A TWI563075B TW I563075 B TWI563075 B TW I563075B TW 102121167 A TW102121167 A TW 102121167A TW 102121167 A TW102121167 A TW 102121167A TW I563075 B TWI563075 B TW I563075B
Authority
TW
Taiwan
Application number
TW102121167A
Other versions
TW201418436A (zh
Inventor
Toshiya Sawai
Takayuki Nagasawa
Satoshi Watanabe
Keiichi Masunaga
Original Assignee
Shinetsu Polymer Co
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Polymer Co, Shinetsu Chemical Co filed Critical Shinetsu Polymer Co
Publication of TW201418436A publication Critical patent/TW201418436A/zh
Application granted granted Critical
Publication of TWI563075B publication Critical patent/TWI563075B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/124—Intrinsically conductive polymers
    • H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/20—Carboxylic acid amides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/017—Additives being an antistatic agent
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2061—Electron scattering (proximity) correction or prevention methods

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Structural Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
TW102121167A 2012-07-02 2013-06-14 導電性高分子組成物、設有由該組成物所獲得之抗靜電膜而成的被覆品、及使用前述組成物而成的圖案形成方法 TW201418436A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012148936A JP5830444B2 (ja) 2012-07-02 2012-07-02 導電性高分子組成物、該組成物より得られる帯電防止膜が設けられた被覆品、及び前記組成物を用いたパターン形成方法。

Publications (2)

Publication Number Publication Date
TW201418436A TW201418436A (zh) 2014-05-16
TWI563075B true TWI563075B (zh) 2016-12-21

Family

ID=49881597

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102121167A TW201418436A (zh) 2012-07-02 2013-06-14 導電性高分子組成物、設有由該組成物所獲得之抗靜電膜而成的被覆品、及使用前述組成物而成的圖案形成方法

Country Status (6)

Country Link
US (1) US9558862B2 (zh)
EP (1) EP2868698B1 (zh)
JP (1) JP5830444B2 (zh)
KR (1) KR101851583B1 (zh)
TW (1) TW201418436A (zh)
WO (1) WO2014006821A1 (zh)

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JP6515609B2 (ja) * 2014-04-23 2019-05-22 東ソー株式会社 導電性高分子水溶液、及び導電性高分子膜並びに該被覆物品
TWI507474B (zh) * 2014-05-07 2015-11-11 Far Eastern New Century Corp 製造高分子透明導電膜的方法
JP6485074B2 (ja) * 2014-06-19 2019-03-20 東ソー株式会社 共重合体、その製造方法、その導電性ポリマー水溶液、及びその用途
TW201605926A (zh) * 2014-06-19 2016-02-16 東曹股份有限公司 共聚體、共聚體的製造方法以及導電性聚合物水溶液
JP6382780B2 (ja) * 2014-09-30 2018-08-29 信越化学工業株式会社 導電性高分子組成物、被覆品、パターン形成方法、及び基板。
JP6451203B2 (ja) * 2014-10-21 2019-01-16 三菱ケミカル株式会社 レジストパターンの形成方法、パターンが形成された基板の製造方法
JP6319059B2 (ja) * 2014-11-25 2018-05-09 信越化学工業株式会社 フォトマスクブランク、レジストパターンの形成方法、及びフォトマスクの製造方法
US9778570B2 (en) 2015-01-30 2017-10-03 Shin-Etsu Chemical Co., Ltd. Conductive polymer composition, coated article, patterning process and substrate
JP6451469B2 (ja) * 2015-04-07 2019-01-16 信越化学工業株式会社 フォトマスクブランク、レジストパターン形成方法、及びフォトマスクの製造方法
CN107922095A (zh) * 2015-06-17 2018-04-17 诺维信公司 容器
JP6499535B2 (ja) 2015-07-09 2019-04-10 信越化学工業株式会社 被覆品、及びパターン形成方法
JP6450666B2 (ja) * 2015-09-25 2019-01-09 信越化学工業株式会社 導電性高分子組成物、被覆品、及びパターン形成方法
JP6556029B2 (ja) 2015-11-18 2019-08-07 Hoya株式会社 レジスト層付きマスクブランク、レジスト層付きマスクブランクの製造方法、及び、転写用マスクの製造方法
KR102096131B1 (ko) * 2016-07-04 2020-04-01 주식회사 엘지화학 전기전도성 미립자의 제조방법 및 이를 이용하여 제조된 미립자
JP6745153B2 (ja) * 2016-07-11 2020-08-26 信越ポリマー株式会社 導電性離型層形成用塗料及びその製造方法、並びに導電性離型フィルム及びその製造方法
JP2018127513A (ja) * 2017-02-06 2018-08-16 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 半導体水溶性組成物、およびその使用
JP6806171B2 (ja) * 2017-02-10 2021-01-06 三菱ケミカル株式会社 導電性組成物、導電性組成物の製造方法及び導電体の製造方法
JP6937232B2 (ja) 2017-12-07 2021-09-22 信越化学工業株式会社 導電性高分子組成物、被覆品、及びパターン形成方法
CN111971356B (zh) * 2018-03-30 2023-02-03 综研化学株式会社 光学积层体、粘着剂组合物和保护材料
JP2018118254A (ja) * 2018-05-14 2018-08-02 信越ポリマー株式会社 帯電防止フィルムの製造方法
JP7108565B2 (ja) * 2019-03-11 2022-07-28 信越化学工業株式会社 導電性高分子組成物、被覆品、及びパターン形成方法
US12119135B2 (en) 2019-05-16 2024-10-15 Resonac Corporation Electrically conductive polymer composition and method for stably storing electrically conductive polymer solution
KR102865322B1 (ko) * 2019-07-24 2025-09-26 삼성전자주식회사 패턴 형성 방법 및 반도체 소자의 제조 방법
CN114945635B (zh) * 2020-01-29 2024-06-18 三菱化学株式会社 导电性组合物、抗蚀剂被覆材料、抗蚀剂及抗蚀剂图案的形成方法
JP7492484B2 (ja) * 2021-03-31 2024-05-29 信越化学工業株式会社 導電性高分子組成物、基板、及び基板の製造方法
JP7721413B2 (ja) 2021-11-26 2025-08-12 信越化学工業株式会社 導電性高分子組成物、被覆品、及びパターン形成方法
JP2024083083A (ja) 2022-12-09 2024-06-20 信越化学工業株式会社 導電性高分子組成物、被覆品、及びパターン形成方法

Citations (3)

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CN1127158A (zh) * 1994-08-19 1996-07-24 罗纳-布朗克公司 有多个疏水和亲水基团的阴离子型表面活性剂
JP2003509571A (ja) * 1999-09-13 2003-03-11 サゾル ジャーマニー ゲーエムベーハー ジェミニ型界面活性剤及び補助両親媒性化合物を含有する界面活性剤組成物、その製造方法及びその使用
JP2008147035A (ja) * 2006-12-11 2008-06-26 Shin Etsu Polymer Co Ltd 導電性積層体及びその製造方法

Also Published As

Publication number Publication date
US9558862B2 (en) 2017-01-31
TW201418436A (zh) 2014-05-16
JP2014009342A (ja) 2014-01-20
KR20150035815A (ko) 2015-04-07
US20150140492A1 (en) 2015-05-21
EP2868698B1 (en) 2016-12-07
EP2868698A1 (en) 2015-05-06
KR101851583B1 (ko) 2018-04-25
WO2014006821A1 (ja) 2014-01-09
EP2868698A4 (en) 2016-01-27
JP5830444B2 (ja) 2015-12-09

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