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TWI562335B - Apparatus having stacking transistors, method for fabricating stacking transistors and computing device - Google Patents

Apparatus having stacking transistors, method for fabricating stacking transistors and computing device

Info

Publication number
TWI562335B
TWI562335B TW104117406A TW104117406A TWI562335B TW I562335 B TWI562335 B TW I562335B TW 104117406 A TW104117406 A TW 104117406A TW 104117406 A TW104117406 A TW 104117406A TW I562335 B TWI562335 B TW I562335B
Authority
TW
Taiwan
Prior art keywords
stacking transistors
fabricating
computing device
transistors
stacking
Prior art date
Application number
TW104117406A
Other languages
English (en)
Other versions
TW201541612A (zh
Inventor
Ravi Pillarisetty
Charles C Kuo
Han Wui Then
Gilbert Dewey
Willy Rachmady
Van H Le
Marko Radosavljevic
Jack T Kavalieros
Niloy Mukherjee
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW201541612A publication Critical patent/TW201541612A/zh
Application granted granted Critical
Publication of TWI562335B publication Critical patent/TWI562335B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW104117406A 2011-12-28 2012-12-05 Apparatus having stacking transistors, method for fabricating stacking transistors and computing device TWI562335B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/067663 WO2013101003A1 (en) 2011-12-28 2011-12-28 Techniques and configurations for stacking transistors of an integrated circuit device

Publications (2)

Publication Number Publication Date
TW201541612A TW201541612A (zh) 2015-11-01
TWI562335B true TWI562335B (en) 2016-12-11

Family

ID=48698244

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104117406A TWI562335B (en) 2011-12-28 2012-12-05 Apparatus having stacking transistors, method for fabricating stacking transistors and computing device
TW101145662A TWI496292B (zh) 2011-12-28 2012-12-05 具有堆疊電晶體之裝置、製造堆疊電晶體之方法以及運算裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101145662A TWI496292B (zh) 2011-12-28 2012-12-05 具有堆疊電晶體之裝置、製造堆疊電晶體之方法以及運算裝置

Country Status (5)

Country Link
US (2) US9236476B2 (zh)
KR (2) KR101606305B1 (zh)
CN (1) CN104170091B (zh)
TW (2) TWI562335B (zh)
WO (1) WO2013101003A1 (zh)

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US9041448B2 (en) 2013-03-05 2015-05-26 Qualcomm Incorporated Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC) (3DIC) and related methods
US9177890B2 (en) 2013-03-07 2015-11-03 Qualcomm Incorporated Monolithic three dimensional integration of semiconductor integrated circuits
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US10790281B2 (en) * 2015-12-03 2020-09-29 Intel Corporation Stacked channel structures for MOSFETs
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US11257929B2 (en) * 2015-12-18 2022-02-22 Intel Corporation Stacked transistors
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Also Published As

Publication number Publication date
CN104170091A (zh) 2014-11-26
US9236476B2 (en) 2016-01-12
WO2013101003A1 (en) 2013-07-04
TW201332110A (zh) 2013-08-01
KR20160036084A (ko) 2016-04-01
CN104170091B (zh) 2017-05-17
KR101786453B1 (ko) 2017-10-18
US20140035041A1 (en) 2014-02-06
KR20140090686A (ko) 2014-07-17
KR101606305B1 (ko) 2016-03-24
TWI496292B (zh) 2015-08-11
US20160064545A1 (en) 2016-03-03
TW201541612A (zh) 2015-11-01
US9812574B2 (en) 2017-11-07

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees