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TWI562161B - Internal voltage generation circuit and semiconductor integrated circuit - Google Patents

Internal voltage generation circuit and semiconductor integrated circuit

Info

Publication number
TWI562161B
TWI562161B TW100130080A TW100130080A TWI562161B TW I562161 B TWI562161 B TW I562161B TW 100130080 A TW100130080 A TW 100130080A TW 100130080 A TW100130080 A TW 100130080A TW I562161 B TWI562161 B TW I562161B
Authority
TW
Taiwan
Prior art keywords
semiconductor integrated
voltage generation
internal voltage
integrated circuit
circuit
Prior art date
Application number
TW100130080A
Other languages
English (en)
Other versions
TW201227749A (en
Inventor
Hee Joon Lim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW201227749A publication Critical patent/TW201227749A/zh
Application granted granted Critical
Publication of TWI562161B publication Critical patent/TWI562161B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Static Random-Access Memory (AREA)
TW100130080A 2010-12-29 2011-08-23 Internal voltage generation circuit and semiconductor integrated circuit TWI562161B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100137922A KR101239682B1 (ko) 2010-12-29 2010-12-29 내부전압생성회로 및 반도체 집적회로

Publications (2)

Publication Number Publication Date
TW201227749A TW201227749A (en) 2012-07-01
TWI562161B true TWI562161B (en) 2016-12-11

Family

ID=46380682

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100130080A TWI562161B (en) 2010-12-29 2011-08-23 Internal voltage generation circuit and semiconductor integrated circuit

Country Status (4)

Country Link
US (1) US8649232B2 (zh)
KR (1) KR101239682B1 (zh)
CN (1) CN102568563B (zh)
TW (1) TWI562161B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI484317B (zh) * 2013-01-08 2015-05-11 Winbond Electronics Corp 半導體積體電路以及內部電壓產生方法
CN104167217B (zh) * 2013-05-16 2018-10-30 华邦电子股份有限公司 电源处理装置以及方法
KR20160018229A (ko) * 2014-08-08 2016-02-17 에스케이하이닉스 주식회사 반도체 장치
KR20160063726A (ko) * 2014-11-27 2016-06-07 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR102393425B1 (ko) * 2015-10-20 2022-05-03 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW464864B (en) * 1999-01-12 2001-11-21 Samsung Electronics Co Ltd DRAM capable of selectively performing self-refresh operation for memory bank
US20030035325A1 (en) * 2001-08-14 2003-02-20 Samsung Electronics Co., Ltd. Internal voltage generating circuit for periphery, semiconductor memory device having the circuit and method thereof
US20050024911A1 (en) * 2003-07-29 2005-02-03 Yong-Mi Kim Semiconductor memory device capable of reducing current consumption in active mode
US20050041506A1 (en) * 2001-05-07 2005-02-24 Hyong-Ryol Hwang System and method for performing partial array self-refresh operation in a semiconductor memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607161B1 (ko) 1999-08-16 2006-08-01 삼성전자주식회사 반도체 메모리 장치의 어레이 내부전압 제어회로 및 방법과 이를 이용한 멀티 뱅크형 반도체 메모리 장치
KR100437463B1 (ko) * 2002-07-18 2004-06-23 삼성전자주식회사 반도체 메모리 장치 내부전원전압발생기를 제어하는 회로및 방법
KR100567916B1 (ko) * 2004-04-20 2006-04-05 주식회사 하이닉스반도체 반도체 메모리 소자의 전원 공급 장치 및 방법
KR100586555B1 (ko) * 2005-01-17 2006-06-08 주식회사 하이닉스반도체 내부전압 생성 제어회로 및 이를 이용한 내부전압 생성회로
KR100870424B1 (ko) * 2007-10-12 2008-11-26 주식회사 하이닉스반도체 내부 전압 생성 회로

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW464864B (en) * 1999-01-12 2001-11-21 Samsung Electronics Co Ltd DRAM capable of selectively performing self-refresh operation for memory bank
US20050041506A1 (en) * 2001-05-07 2005-02-24 Hyong-Ryol Hwang System and method for performing partial array self-refresh operation in a semiconductor memory device
US20030035325A1 (en) * 2001-08-14 2003-02-20 Samsung Electronics Co., Ltd. Internal voltage generating circuit for periphery, semiconductor memory device having the circuit and method thereof
US20050024911A1 (en) * 2003-07-29 2005-02-03 Yong-Mi Kim Semiconductor memory device capable of reducing current consumption in active mode

Also Published As

Publication number Publication date
KR20120076434A (ko) 2012-07-09
CN102568563B (zh) 2016-03-02
CN102568563A (zh) 2012-07-11
TW201227749A (en) 2012-07-01
US20120170392A1 (en) 2012-07-05
US8649232B2 (en) 2014-02-11
KR101239682B1 (ko) 2013-03-06

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