TWI561691B - - Google Patents

Info

Publication number: TWI561691B
Authority: TW; Taiwan

Application number

TW104125136A

Other versions

TW201540881A (zh

Inventor

Takashi Sakurada

Tomohiro Kawase

Original Assignee

Sumitomo Electric Industries

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-01-20

Filing date

2010-01-20

Publication date

2016-12-11

2010-01-20 Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries

2015-11-01 Publication of TW201540881A publication Critical patent/TW201540881A/zh

2016-12-11 Application granted granted Critical

2016-12-11 Publication of TWI561691B publication Critical patent/TWI561691B/zh

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Thermal Sciences (AREA)
Mechanical Engineering (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

TW104125136A 2009-01-20 2010-01-20 導電性ＧａＡｓ之結晶與基板及其等之製作方法 TW201540881A (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2009010222		2009-01-20

Publications (2)

Publication Number	Publication Date
TW201540881A TW201540881A (zh)	2015-11-01
TWI561691B true TWI561691B (zh)	2016-12-11

Family

ID=42355930

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
TW104125136A TW201540881A (zh)	2009-01-20	2010-01-20	導電性ＧａＡｓ之結晶與基板及其等之製作方法
TW099101509A TWI545237B (zh)	2009-01-20	2010-01-20	Fabrication of conductive GaAs and substrate and the like

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
TW099101509A TWI545237B (zh)	2009-01-20	2010-01-20	Fabrication of conductive GaAs and substrate and the like

Country Status (6)

Country	Link
US (4)	US20110274879A1 (zh)
EP (1)	EP2390387B1 (zh)
JP (1)	JP5664239B2 (zh)
CN (1)	CN102292477B (zh)
TW (2)	TW201540881A (zh)
WO (1)	WO2010084878A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN106536795B (zh) *	2014-07-17	2020-07-31	住友电气工业株式会社	GaAs晶体
US11408091B2 (en) *	2018-02-23	2022-08-09	Sumitomo Electric Industries, Ltd.	Gallium arsenide crystal substrate
WO2020121526A1 (ja) *	2018-12-14	2020-06-18	住友電気工業株式会社	半絶縁性ＧａＡｓ基板およびＧａＡｓ基板の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5612014A (en) *	1994-08-10	1997-03-18	Sumitomo Electric Industries, Ltd.	Compound semiconductor crystal

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4839397A (zh) *	1971-09-28	1973-06-09
US4384398A (en) *	1981-10-26	1983-05-24	Bell Telephone Laboratories, Incorporated	Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs
IT1207497B (it) *	1985-05-29	1989-05-25	Montedison Spa	Monocristalli di arseniuro di gallio a bassa densita' di dislocazioni e di elevata purezza.
US4840699A (en)	1987-06-12	1989-06-20	Ghemini Technologies	Gallium arsenide crystal growth
JPH02145499A (ja) *	1988-12-28	1990-06-04	Tsuaitowan Faaren Gonie Jishu Ienjiou Yuen	砒化ガリウム単結晶の成長方法
JPH0831409B2 (ja) *	1990-02-14	1996-03-27	株式会社東芝	化合物半導体装置およびその製造方法
DE4021252A1 (de) *	1990-07-04	1992-01-09	Hitachi Cable	Gaas-einkristall mit geringer versetzungsdichte und verfahren zum zuechten desselben
JP3114259B2 (ja) *	1991-08-01	2000-12-04	三菱化学株式会社	新規なＰＬ発光を示すＧａＡｓ結晶とその製造方法
JPH0543400A (ja)	1991-08-02	1993-02-23	Hitachi Cable Ltd	ＧａＡｓ単結晶の製造方法
JP3500541B2 (ja) *	1994-02-15	2004-02-23	富士通株式会社	単電子トンネル接合装置の製造方法
JPH09190989A (ja) *	1996-01-09	1997-07-22	Japan Energy Corp	化合物半導体ウェハの製造方法
JP2001053005A (ja) *	1999-08-06	2001-02-23	Sumitomo Electric Ind Ltd	化合物半導体エピタキシャルウェハおよびその製造方法
JP2002029881A (ja) *	2000-07-10	2002-01-29	Hitachi Cable Ltd	化合物半導体単結晶の製造方法
JP4200690B2 (ja) *	2002-05-30	2008-12-24	日立電線株式会社	ＧａＡｓウェハの製造方法
JP4235711B2 (ja) *	2002-09-27	2009-03-11	Ｄｏｗａエレクトロニクス株式会社	縦型ボート法によるＧａＡｓ単結晶の製造方法
US7175707B2 (en) *	2003-03-24	2007-02-13	Hitachi Cable Ltd.	P-type GaAs single crystal and its production method
US20070079751A1 (en) *	2003-07-17	2007-04-12	Fumio Matsumoto	Inp single crystal, gaas single crystal, and method for production thereof
US7214269B2 (en) *	2004-10-15	2007-05-08	Hitachi Cable, Ltd.	Si-doped GaAs single crystal substrate
US7318916B2 (en) *	2005-01-31	2008-01-15	Hitachi Cable, Ltd.	Semiconductive GaAs wafer and method of making the same
JP5111104B2 (ja)	2005-03-31	2012-12-26	Ｄｏｗａエレクトロニクス株式会社	ＳｉドープＧａＡｓ単結晶インゴットおよびその製造方法
EP1739213B1 (de)	2005-07-01	2011-04-13	Freiberger Compound Materials GmbH	Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
US7902453B2 (en) *	2005-07-27	2011-03-08	Rensselaer Polytechnic Institute	Edge illumination photovoltaic devices and methods of making same
CN100400720C (zh) *	2006-04-21	2008-07-09	罗建国	精密垂直温差梯度冷凝单晶体生长装置及方法

2010
- 2010-01-20 EP EP10733485.6A patent/EP2390387B1/en active Active
- 2010-01-20 CN CN201080005056.6A patent/CN102292477B/zh active Active
- 2010-01-20 WO PCT/JP2010/050628 patent/WO2010084878A1/ja not_active Ceased
- 2010-01-20 TW TW104125136A patent/TW201540881A/zh unknown
- 2010-01-20 TW TW099101509A patent/TWI545237B/zh active
- 2010-01-20 US US13/145,145 patent/US20110274879A1/en not_active Abandoned
- 2010-01-20 JP JP2010521233A patent/JP5664239B2/ja active Active
2013
- 2013-07-29 US US13/953,421 patent/US20130312878A1/en not_active Abandoned
2018
- 2018-05-10 US US15/976,184 patent/US11017913B2/en active Active
2021
- 2021-04-19 US US17/233,845 patent/US11955251B2/en active Active

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5612014A (en) *	1994-08-10	1997-03-18	Sumitomo Electric Industries, Ltd.	Compound semiconductor crystal

Also Published As

Publication number	Publication date
US20110274879A1 (en)	2011-11-10
TW201540881A (zh)	2015-11-01
EP2390387B1 (en)	2021-06-23
US20180261354A1 (en)	2018-09-13
CN102292477A (zh)	2011-12-21
JP5664239B2 (ja)	2015-02-04
US11017913B2 (en)	2021-05-25
EP2390387A1 (en)	2011-11-30
EP2390387A4 (en)	2014-08-06
JPWO2010084878A1 (ja)	2012-07-19
US11955251B2 (en)	2024-04-09
US20210241934A1 (en)	2021-08-05
US20130312878A1 (en)	2013-11-28
TW201035395A (en)	2010-10-01
WO2010084878A1 (ja)	2010-07-29
CN102292477B (zh)	2015-11-25
TWI545237B (zh)	2016-08-11

Publication	Publication Date	Title
BE2015C040I2 (zh)	2024-10-08
BRPI0925311A2 (zh)	2016-02-02
BR112012008195A2 (zh)	2021-11-03
BR112012003062A2 (zh)	2017-05-02
BRPI0924307A2 (zh)	2017-08-22
BR112012008267A2 (zh)	2021-11-03
BR112012012396A2 (zh)	2021-11-03
BR112012000607A2 (zh)	2017-09-05
BR112012000665A2 (zh)	2017-09-05
BR112012003080A2 (zh)	2017-09-12
BR112012012487A2 (zh)	2021-11-23
BR122017024704A2 (zh)	2011-02-03
BR112012003853A2 (zh)	2017-08-29
BR112012012080A2 (zh)	2021-11-03
BRPI0924534A2 (zh)	2021-12-07
BR112012009797A2 (zh)	2017-09-05
BR112012009446A2 (zh)	2021-12-07
BR112012009703A2 (zh)	2017-09-05
BR112012010357A2 (zh)	2017-10-03
BR112012007656A2 (zh)	2017-09-12
BR122019005883A2 (zh)	2019-09-03
BR112012001263A2 (zh)	2017-08-15
BR112012000159A2 (zh)	2017-08-15
BR112012014856A2 (zh)	2021-11-03
BR112012002627A2 (zh)	2017-08-29