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TWI560811B - Devices and methodologies related to structures having hbt and fet - Google Patents

Devices and methodologies related to structures having hbt and fet

Info

Publication number
TWI560811B
TWI560811B TW100140380A TW100140380A TWI560811B TW I560811 B TWI560811 B TW I560811B TW 100140380 A TW100140380 A TW 100140380A TW 100140380 A TW100140380 A TW 100140380A TW I560811 B TWI560811 B TW I560811B
Authority
TW
Taiwan
Prior art keywords
hbt
fet
structures
devices
methodologies related
Prior art date
Application number
TW100140380A
Other languages
English (en)
Other versions
TW201232715A (en
Inventor
Hsiang-Chih Sun
Peter Joseph Zampardi
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of TW201232715A publication Critical patent/TW201232715A/zh
Application granted granted Critical
Publication of TWI560811B publication Critical patent/TWI560811B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
TW100140380A 2010-11-04 2011-11-04 Devices and methodologies related to structures having hbt and fet TWI560811B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/939,474 US20120112243A1 (en) 2010-11-04 2010-11-04 Bipolar and FET Device Structure

Publications (2)

Publication Number Publication Date
TW201232715A TW201232715A (en) 2012-08-01
TWI560811B true TWI560811B (en) 2016-12-01

Family

ID=46018776

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100140380A TWI560811B (en) 2010-11-04 2011-11-04 Devices and methodologies related to structures having hbt and fet

Country Status (3)

Country Link
US (1) US20120112243A1 (zh)
TW (1) TWI560811B (zh)
WO (1) WO2012061632A2 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9105488B2 (en) 2010-11-04 2015-08-11 Skyworks Solutions, Inc. Devices and methodologies related to structures having HBT and FET
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
CN103597742A (zh) 2012-06-14 2014-02-19 西凯渥资讯处理科技公司 包含相关系统、装置及方法的功率放大器模块
CN107104649B (zh) 2012-08-15 2020-10-13 天工方案公司 射频功率放大器控制电路及方法、射频模块和射频装置
US9385224B2 (en) * 2014-08-13 2016-07-05 Northrop Grumman Systems Corporation Method of forming an integrated multichannel device and single channel device structure
US9923088B2 (en) 2016-07-08 2018-03-20 Qorvo Us, Inc. Semiconductor device with vertically integrated pHEMTs
CN113066762B (zh) * 2021-03-18 2024-05-07 厦门市三安集成电路有限公司 一种双极型场效应晶体管及其制备方法
CN113838848B (zh) * 2021-10-27 2025-06-03 泉州市三安集成电路有限公司 Bi-HEMT器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050139921A1 (en) * 2003-12-26 2005-06-30 Kang Jin Y. NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same
US20080296624A1 (en) * 2007-06-04 2008-12-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
TW200849556A (en) * 2006-06-14 2008-12-16 Nxp Bv Semiconductor device and method of manufacturing such a device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177060A (ja) * 1999-12-14 2001-06-29 Nec Corp モノリシック集積回路装置及びその製造方法
US6906359B2 (en) * 2003-10-22 2005-06-14 Skyworks Solutions, Inc. BiFET including a FET having increased linearity and manufacturability
KR100677816B1 (ko) * 2005-03-28 2007-02-02 산요덴키가부시키가이샤 능동 소자 및 스위치 회로 장치
GB2453115A (en) * 2007-09-25 2009-04-01 Filtronic Compound Semiconduct HBT and FET BiFET hetrostructure and substrate with etch stop layers
US8237229B2 (en) * 2008-05-22 2012-08-07 Stmicroelectronics Inc. Method and apparatus for buried-channel semiconductor device
US7755107B2 (en) * 2008-09-24 2010-07-13 Skyworks Solutions, Inc. Bipolar/dual FET structure including enhancement and depletion mode FETs with isolated channels

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050139921A1 (en) * 2003-12-26 2005-06-30 Kang Jin Y. NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same
TW200849556A (en) * 2006-06-14 2008-12-16 Nxp Bv Semiconductor device and method of manufacturing such a device
US20080296624A1 (en) * 2007-06-04 2008-12-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
WO2012061632A3 (en) 2012-08-16
WO2012061632A2 (en) 2012-05-10
TW201232715A (en) 2012-08-01
US20120112243A1 (en) 2012-05-10

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