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TWI560527B - Method of slimming radiation-sensitive material lines in lithographic applications - Google Patents

Method of slimming radiation-sensitive material lines in lithographic applications

Info

Publication number
TWI560527B
TWI560527B TW101111550A TW101111550A TWI560527B TW I560527 B TWI560527 B TW I560527B TW 101111550 A TW101111550 A TW 101111550A TW 101111550 A TW101111550 A TW 101111550A TW I560527 B TWI560527 B TW I560527B
Authority
TW
Taiwan
Prior art keywords
sensitive material
material lines
lithographic applications
slimming
radiation
Prior art date
Application number
TW101111550A
Other languages
English (en)
Other versions
TW201303520A (zh
Inventor
Michael A Carcasi
Mark H Somervell
Benjamin M Rathsack
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201303520A publication Critical patent/TW201303520A/zh
Application granted granted Critical
Publication of TWI560527B publication Critical patent/TWI560527B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • H10P76/204—
    • H10P76/2041—
    • H10P72/0468—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
TW101111550A 2011-03-31 2012-03-30 Method of slimming radiation-sensitive material lines in lithographic applications TWI560527B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/077,833 US8435728B2 (en) 2010-03-31 2011-03-31 Method of slimming radiation-sensitive material lines in lithographic applications

Publications (2)

Publication Number Publication Date
TW201303520A TW201303520A (zh) 2013-01-16
TWI560527B true TWI560527B (en) 2016-12-01

Family

ID=45929039

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101111550A TWI560527B (en) 2011-03-31 2012-03-30 Method of slimming radiation-sensitive material lines in lithographic applications

Country Status (6)

Country Link
US (1) US8435728B2 (zh)
JP (1) JP5944484B2 (zh)
KR (1) KR101938905B1 (zh)
CN (1) CN103547968B (zh)
TW (1) TWI560527B (zh)
WO (1) WO2012134910A1 (zh)

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US8980651B2 (en) 2011-09-30 2015-03-17 Tokyo Electron Limited Overlay measurement for a double patterning
US8647817B2 (en) 2012-01-03 2014-02-11 Tokyo Electron Limited Vapor treatment process for pattern smoothing and inline critical dimension slimming
US9086631B2 (en) 2012-08-27 2015-07-21 Tokyo Electron Limited EUV resist sensitivity reduction
US9147574B2 (en) 2013-03-14 2015-09-29 Tokyo Electron Limited Topography minimization of neutral layer overcoats in directed self-assembly applications
US8975009B2 (en) 2013-03-14 2015-03-10 Tokyo Electron Limited Track processing to remove organic films in directed self-assembly chemo-epitaxy applications
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP2015082046A (ja) * 2013-10-23 2015-04-27 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、電子デバイス
KR20240128123A (ko) 2014-10-23 2024-08-23 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
US9612536B2 (en) * 2015-08-31 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Developer for lithography
KR102204773B1 (ko) 2015-10-13 2021-01-18 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
JP2017068281A (ja) * 2016-12-27 2017-04-06 Hoya株式会社 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
CN120010178A (zh) * 2018-05-04 2025-05-16 Asml荷兰有限公司 用于euv光刻术的表膜
JP7086232B2 (ja) * 2018-06-15 2022-06-17 マトソン テクノロジー インコーポレイテッド 被加工材の露光後ベーク処理のための方法および装置
CN112585721B (zh) * 2018-08-23 2024-05-31 东京毅力科创株式会社 基片处理方法和基片处理系统
TWI884927B (zh) 2018-10-17 2025-06-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
KR102699733B1 (ko) 2019-04-12 2024-08-27 인프리아 코포레이션 유기금속 포토레지스트 현상제 조성물 및 처리 방법
US11947262B2 (en) 2020-03-02 2024-04-02 Inpria Corporation Process environment for inorganic resist patterning
JP7763960B2 (ja) 2021-08-25 2025-11-04 ジェミナティオ，インク． 高密度コンタクト形成のためのレジスト内プロセス
CN117916851A (zh) * 2021-08-25 2024-04-19 杰米纳蒂奥公司 利用校正性化学的增强场拼接
KR20240056508A (ko) * 2021-08-25 2024-04-30 제미나티오, 인코포레이티드 내로우 라인 컷 마스킹 프로세스
CN113845082B (zh) * 2021-09-08 2022-10-18 清华大学 辐射热流调控器件及其应用
WO2025243876A1 (ja) * 2024-05-24 2025-11-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置

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US7829269B1 (en) * 2009-04-27 2010-11-09 Tokyo Electron Limited Dual tone development with plural photo-acid generators in lithographic applications

Also Published As

Publication number Publication date
CN103547968B (zh) 2016-03-23
US8435728B2 (en) 2013-05-07
US20110244403A1 (en) 2011-10-06
WO2012134910A1 (en) 2012-10-04
JP2014510954A (ja) 2014-05-01
KR20140031884A (ko) 2014-03-13
JP5944484B2 (ja) 2016-07-05
TW201303520A (zh) 2013-01-16
CN103547968A (zh) 2014-01-29
KR101938905B1 (ko) 2019-01-15

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